WO2020181976A1 - 带弧形结构的薄膜封装的mems器件组件及电子设备 - Google Patents

带弧形结构的薄膜封装的mems器件组件及电子设备 Download PDF

Info

Publication number
WO2020181976A1
WO2020181976A1 PCT/CN2020/076212 CN2020076212W WO2020181976A1 WO 2020181976 A1 WO2020181976 A1 WO 2020181976A1 CN 2020076212 W CN2020076212 W CN 2020076212W WO 2020181976 A1 WO2020181976 A1 WO 2020181976A1
Authority
WO
WIPO (PCT)
Prior art keywords
packaging
release hole
film
assembly
mems device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/076212
Other languages
English (en)
French (fr)
Inventor
张孟伦
庞慰
杨清瑞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
ROFS Microsystem Tianjin Co Ltd
Original Assignee
Tianjin University
ROFS Microsystem Tianjin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University, ROFS Microsystem Tianjin Co Ltd filed Critical Tianjin University
Publication of WO2020181976A1 publication Critical patent/WO2020181976A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and more particularly to a MEMS device assembly, and an electronic device having the assembly.
  • MEMS devices based on semiconductor micromachining have the advantages of small size, low power consumption, strong integration, good durability, low price and stable performance.
  • BAW bulk acoustic wave
  • FBAR film bulk acoustic resonator
  • the market share is increasing.
  • FBAR filter has excellent characteristics such as small size (um level), high resonance frequency (GHz), high quality factor (1000), large power capacity, and good roll-off effect.
  • the frequency band has gradually replaced the traditional surface acoustic wave (SAW) filter.
  • SAW surface acoustic wave
  • BAW resonators For BAW resonators, there are currently two main commercialized structures: a cavity-type structure (Film Bulk Acoustic Wave, FBAR) and a solid-mounted structure (Solidly Mounted Resonator, SMR).
  • FBAR Flexible Bulk Acoustic Wave
  • SMR Solidly Mounted Resonator
  • the principles of these two types of bulk acoustic wave resonators are the same, but the main difference is the limitation of resonance energy.
  • the FBAR resonator suspends the main part of the piezoelectric film on the silicon substrate through the lower cavity, and the energy is limited in this part during resonance.
  • SMR resonators form "mirrors" under the electrodes that reflect sound waves.
  • Bragg reflective layers which are alternately composed of some layers with very different acoustic impedances, such as W and SiO2 (about 4: Impedance ratio of 1), AlN and SiO2 (impedance ratio of about 3:1), can reflect sound waves back to the resonant part of the core, and play a role in limiting energy dissipation.
  • W and SiO2 about 4: Impedance ratio of 1
  • AlN and SiO2 impedance ratio of about 3:1
  • BAW resonators require a specific application environment, for example, a specific range of humidity or pressure or in an inert gas.
  • some bulk acoustic wave resonators are sensitive to specific pollution sources. Therefore, the BAW resonator needs to be packaged.
  • Thin-film packaging is a way of packaging MEMS devices, which helps to obtain at least one of the advantages of reducing packaging size, simplifying packaging process steps, saving packaging costs, and improving sealing strength.
  • the film package can also be used for the bulk acoustic wave resonator, and the package of the film bulk acoustic wave resonator is briefly described below.
  • Figure 1 shows the thin film packaging of the thin film bulk acoustic resonator in the prior art.
  • 10 is the bottom cavity of the resonator
  • 11 is the bottom electrode of the resonator
  • 12 is the piezoelectric layer of the resonator
  • 13 is the top electrode of the resonator
  • 14 is the thin film encapsulation layer
  • 15 is the thin film encapsulation layer
  • the release hole on 14 is the sealing layer of the thin-film encapsulation layer 14
  • 17 is the encapsulation space on the top of the resonator formed by the thin-film encapsulation layer.
  • the general thin film packaging method will have a right-angle structure 18, and at the right-angle structure, the stress will accumulate. If the stress is too large, it is easy to cause the stress concentration at the boundary, that is, the right-angle structure 18 to crack , Resulting in device sealing failure. In addition, too much stress will cause poor adhesion of the multilayer film and lower mechanical properties. In addition, excessive stress will cause lattice mismatch, resulting in poor film formation quality.
  • the present invention is proposed.
  • a MEMS device assembly including:
  • a packaging film for forming a packaging space for packaging the MEMS device having a top portion, an edge portion, and a connecting portion between the top portion and the edge portion, and the edge portion, the connecting portion and the top portion define the package Space, and the edge portion is disposed on the packaging surface,
  • the connecting portion is arc-shaped.
  • the included angle formed by the packaging film and the packaging surface is in a range of 2 degrees to 45 degrees.
  • the included angle formed by the packaging film and the packaging surface is in the range of 10°-20°.
  • the packaging space is an arc-shaped space.
  • the vertical distance from the highest point of the inner surface of the arc-shaped space to the packaging surface is between 0.5 microns and 10 microns.
  • the vertical distance H from the highest point of the inner surface of the arc-shaped space to the MEMS device is between 0.5 ⁇ m and 10 ⁇ m.
  • the top is generally flat.
  • the edge portion and the connecting portion are integrally arc-shaped; or the edge portion has an arc-shaped portion protruding toward the packaging space.
  • the boundary shape of the packaging space at the junction of the packaging film and the packaging surface is an arc shape.
  • the MEMS device includes an air gap structure.
  • the MEMS device is provided with a first release hole communicating with the air gap structure, the first release hole is located in the packaging space; the packaging film is provided with a second release hole communicating with the packaging space The second release hole is filled with a sealing material; and in the vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is less than 20um.
  • the second release hole overlaps or partially overlaps the corresponding first release hole.
  • the horizontal distance between each of the second release holes and the corresponding first release hole is less than 20um.
  • the MEMS device is provided with a first release hole communicating with the air gap structure, and the first release hole is located outside the packaging space; the packaging film is provided with a second release hole communicating with the packaging space.
  • the second release hole is filled with a sealing material.
  • the packaging film covers and seals the first release hole.
  • the MEMS device is a bulk acoustic wave resonator.
  • the resonator is a thin film bulk acoustic resonator including an acoustic mirror cavity.
  • an electronic device including the above-mentioned MEMS device assembly.
  • FIG. 1 is a schematic cross-sectional view showing a package of a thin film bulk acoustic resonator in the prior art
  • FIG. 2 is a schematic top view of a thin-film bulk acoustic resonator that has been thin-film encapsulated according to an exemplary embodiment of the present invention
  • Figure 3 is a schematic cross-sectional view taken along the line A-A in Figure 2;
  • FIG. 4 is a cross-sectional view showing a thin film bulk acoustic resonator that has been thin-film encapsulated according to an exemplary embodiment of the present invention
  • FIG. 5 is a cross-sectional view showing a thin-film bulk acoustic resonator that has been thin-film encapsulated according to another exemplary embodiment of the present invention
  • FIG. 6 is a cross-sectional view showing a thin-film bulk acoustic resonator that has been thin-film encapsulated according to still another exemplary embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing a thin-film bulk acoustic resonator that has been thin-film encapsulated according to still another exemplary embodiment of the present invention.
  • the packaging of a thin-film bulk acoustic wave resonator is taken as an example to illustrate the thin-film packaging of a MEMS device according to an embodiment of the present invention.
  • 10 is the cavity at the bottom of the resonator (corresponding to the air gap structure), or any form of acoustic mirror such as a Bragg reflector
  • 20 is the release hole of the cavity at the bottom of the resonator
  • 11 is the cavity of the resonator
  • the bottom electrode, 12 is the piezoelectric layer of the resonator
  • 13 is the top electrode of the resonator
  • 14 is the packaging film
  • 15 is the release hole on the packaging film.
  • FIG 3 shows the piezoelectric layer 12, the packaging film 14, the release hole 15 on the packaging film, the sealing layer 16 for sealing the release hole 15, and the packaging space 17 formed by the packaging film on the top of the resonator.
  • the part of the packaging film 14 forming the packaging space 17 is arc-shaped, which is in line with the packaging plane of the resonator (in FIG. 3 is the upper surface of the piezoelectric layer 12, it should be clear that based on different MEMS Devices and based on different requirements, packaging planes can be different) form an included angle ⁇ between.
  • the arc-shaped packaging film can effectively reduce the stress concentration in the film, thereby avoiding the cracking of the resonator packaging film due to excessive stress, thereby improving the adhesion and mechanical properties of the multilayer film in the packaging structure , So that the packaged resonator is more stable and reliable, and the sealing performance is better.
  • the present invention proposes the following packaging film for packaging MEMS devices: the packaging film has a top, an edge, and a top and edge.
  • the connecting part therebetween defines the packaging space by the edge part, the connecting part and the top, and the edge part is arranged on the packaging surface, wherein the connecting part is arc-shaped.
  • the edge portion, the connecting portion, and the top are all formed into an arc shape, and the arc shape of the connecting portion is a part of the entire arc shape.
  • FIG. 6 where the boundary portion indicated by reference numeral 61 is shown as the connecting portion connecting the top and the edge portion in an arc shape. Since the shape of the boundary 61 is arc-shaped, the stress concentration can be reduced, and the packaging structure is more stable and reliable.
  • the edge portion of the packaging film has an arc-shaped portion protruding to the packaging space.
  • the edge portion and the connecting portion can be seen
  • the part forms an S shape.
  • the arc shape can reduce the stress concentration, making the package structure more stable and reliable.
  • the included angle ⁇ formed by the packaging film and the packaging surface is in the range of 2 degrees to 45 degrees, and further, at 10 degrees. -20 degrees range.
  • the included angle may be 15 degrees, 30 degrees, etc. in addition to the aforementioned endpoint values.
  • the present invention uses a thin film bulk acoustic resonator as an example to describe thin film packaging
  • the technical solution of the present invention can also be applied to other MEMS devices suitable for thin film packaging.
  • the MEMS device includes an air gap structure, such as a bottom cavity 10, which can be a cavity structure etched in the substrate or a cavity that protrudes upward.
  • the structure may also be an acoustic wave reflection form such as a Bragg reflection structure alternately formed by a high acoustic impedance material and a low acoustic impedance material.
  • a cavity structure etched in the substrate.
  • a thin-film bulk acoustic resonator is used as an example of a MEMS device for description. As those skilled in the art can understand, the following description can also be applied to other MEMS devices having an air gap structure.
  • the vertical distance from the highest point of the inner surface of the arc-shaped space to the package surface is between 0.5 micrometers and 10 micrometers, for example, 0.5 micrometers, 1 micrometer and 5 micrometers. Micron etc.
  • the MEMS device is provided with a first release hole (for example, corresponding to the release hole 20) communicating with the air gap structure, and the first release hole is located in the packaging space 17;
  • the packaging film 14 is provided with a second release hole (for example, corresponding to the release hole 15) communicating with the packaging space 17, and the second release hole is filled with a sealing material; and in the vertical projection, at least one of the second release holes
  • the horizontal distance between the hole and the corresponding first release hole is less than 20um.
  • the horizontal distance between the rightmost release hole 15 and the release hole 20 shown in the figure is less than 20um.
  • the second release hole overlaps or partially overlaps the corresponding first release hole, for example, it may be the rightmost release shown in FIG. 3
  • the vertical projection of the hole 15 and the release hole 20 overlap or partially overlap.
  • the horizontal distance between each of the second release holes and the corresponding first release hole is less than 20um.
  • the horizontal distance between other existing release holes 15 and the corresponding release holes 20 is less than 20um.
  • the horizontal distance between at least one of the second release holes and the corresponding first release hole is less than 20um, the following technical effects can be obtained: During the formation of 17, after the liquid medicine enters the air gap at the bottom of the resonator through the release hole 15, it can quickly circulate and flow out, taking away the liquid medicine residue, etc., thus reducing the possibility of the liquid medicine residue remaining in the air gap. It is beneficial to improve the performance of resonators or MEMS devices.
  • the packaging film 14 when the position where the release hole 15 is provided on the packaging film 14 is above the release hole 20 of the air gap 10 (the two overlap or substantially overlap in vertical projection), when the packaging film is formed, the packaging film will not correspond to A step is generated at the position of the release hole 10, and there is no stress accumulation phenomenon, thereby making the packaging structure of the resonator or MEMS device more stable.
  • the MEMS device is a thin-film bulk acoustic resonator, including: a bottom cavity 10 (corresponding to an air gap structure), a first release hole 11 communicating with the cavity 10, a bottom electrode 12, and a piezoelectric layer 13 , The top electrode 14, the flat layer 23, the packaging film 20, the release hole 21, the sealing layer 22, and the sealing space 24.
  • the first release hole is located outside the packaging space 17; the packaging film is provided with a second release hole 15 communicating with the packaging space, and the second release hole is filled with a sealing material.
  • the packaging film covers and seals the first release hole 11.
  • the release hole 11 is outside the packaging space 24, the release hole is sealed during the process of forming the packaging film 20, so there will be no liquid medicine in the process of releasing the packaging space 24. Residues, particles, etc. enter the bottom cavity 10 of the FBAR, so the performance of the resonator will not be affected. Moreover, the position and number of the openings 21 on the packaging film 20 can be flexibly selected. At the position of the opening, the process steps for aligning with the bottom cavity release hole 11 can be omitted, and the packaging cost can be reduced; at the same time, the number of openings can be increased, and the formation of the cavity 24 can be accelerated. In addition, for FBAR or MEMS devices with the same area, packaging the release hole 11 outside the cavity 24 can reduce the area of the packaging space 24, thereby reducing the packaging size of the resonator or MEMS device.
  • Fig. 5 is a schematic diagram of a film bulk acoustic resonator according to another embodiment.
  • the structure is basically the same as that of FIG. 3, the difference lies in the shape of the packaging film at the boundary 51 of the packaging cavity formed on the packaging surface, that is, the shape of the boundary in this embodiment forms an inwardly curved arc.
  • the boundary 51 is an inwardly curved arc shape, it can avoid that when the angle of the package cavity formed by the package film is small, the film stress at the boundary caused by the package film being too sharp can be avoided. , Resulting in the rupture of the packaging film and making the packaging structure unstable.
  • FIG. 6 is a schematic cross-sectional view of a thin-film bulk acoustic resonator according to another embodiment.
  • the structure is basically the same as that of FIG. 3, except that the shape of the packaging film is different.
  • the connecting portion is arc-shaped, and the top is flat. More specifically, the connecting portion and the edge portion are integrated in an arc shape, and the top portion is in a flat shape. Because the top of the packaging film is flat, a flat structure is formed on the top of the resonator, which is convenient for the next step of packaging or integration applications.
  • FIG. 7 is a schematic cross-sectional view of a thin-film bulk acoustic resonator according to another embodiment.
  • the structure is basically the same as that of FIG. 3, except that the shape of the packaging film is different.
  • the shape of the connecting portion is a transitional arc shape, that is, the arc connected to the edge portion is concave inward, and the arc connected to the top is concave outward. Since the connecting part is in the shape of a circular arc, it can avoid that when the angle of the package cavity formed by the package film is small, the film stress caused by the excessive sharpness of the package film at the boundary can be avoided, which will cause the package film to break and cause the package The structure becomes unstable.
  • the electrode constituent materials can be gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti) and other similar metals.
  • the piezoelectric layer material can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3) or lithium tantalate ( LiTaO3) and other materials.
  • the material of the sacrificial layer can be organic material, polymer, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxide (such as MgO, ZnO), photoresist (such as SU- 8) and other easily soluble materials.
  • Packaging film materials can be silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes, TOK DFR materials, etc.;
  • the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and other materials.
  • an electronic device including the above-mentioned MEMS device assembly.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种MEMS器件组件，包括：MEMS器件，具有封装表面；封装薄膜（14），用于形成封装所述MEMS器件的封装空间（17），所述封装薄膜（14）具有顶部、边缘部和在顶部与边缘部之间的连接部，由所述边缘部、连接部和顶部限定所述封装空间（17），且所述边缘部设置于所述封装表面，其中：所述连接部为弧形。所述封装薄膜（14）与所述封装表面形成的夹角（α）可在2度-45度的范围内。所述封装空间（17）可为弧形空间。该MEMS器件可以为薄膜体声波谐振器。还提供一种具有上述MEMS器件组件的电子设备。

Description

带弧形结构的薄膜封装的MEMS器件组件及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种MEMS器件组件，以及一种具有该组件的电子设备。
背景技术
基于半导体微加工的MEMS器件具有体积小、功耗低、集成性强、耐用性好、价格低廉、性能稳定等优点。作为体声波(BAW)谐振器的一种，薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR)作为MEMS器件的重要成员正在通信领域发挥着重要作用，特别是FBAR滤波器在射频滤波器领域市场占有份额越来越大，FBAR滤波器由于具有尺寸小(um级)、谐振频率高(GHz)、品质因数高(1000)、功率容量大、滚降效应好等优良特性，在2-10GHz频段已逐步取代传统的声表面波(SAW)滤波器。
对于BAW谐振器，目前商业化的主要有两种结构：空腔型结构(Film Bulk Acoustic Wave,FBAR)和固体装配型结构(Solidly Mounted Resonator,SMR)。这两种体声波谐振器的原理相同，主要区别就是谐振能量的限制方式。FBAR谐振器通过下部空腔将压电薄膜的主体部分悬于硅基底上，谐振时能量就被限制在这部分中。SMR谐振器是在电极下面形成对声波起反射作用的“镜面”，这些“镜面”被称为布拉格反射层，由一些声阻抗相差很大的膜层交替构成，如W和SiO2(约4：1的阻抗比)，AlN和SiO2(约3：1的阻抗比)，可以将声波反射回核心的谐振部分，起到了限制能量耗散的作用。
通常，BAW谐振器要求特定的应用环境，例如，特定范围的湿度或压力或在惰性气体中。此外，有的体声波谐振器对特定污染源敏感。因此，需要对BAW谐振器封装。
薄膜封装是对MEMS器件进行封装的一种方式，其有助于获得缩小封装尺寸、简化封装工艺步骤、节省封装成本、提高密封强度等中的至少一 个方面的优点。
薄膜封装也可以用于体声波谐振器，下面以薄膜体声波谐振器的封装进行简单说明。
图1示出了现有技术中薄膜体声波谐振器的薄膜封装。在图1中，10为谐振器的底部空腔，11为谐振器的底电极，12为谐振器的压电层，13为谐振器的顶电极；14为薄膜封装层，15为薄膜封装层14上的释放孔，16为薄膜封装层14的密封层；17为薄膜封装层形成的位于谐振器顶部的封装空间。
从图1中可以看出，一般的薄膜封装方式会存在一直角结构18，而在直角结构处，应力会发生聚集，如果应力过大，很容易造成边界处应力集中的地方即直角结构18开裂，导致器件密封失效。另外，应力太大会造成多层膜的粘附性变差，机械性能降低。此外，应力过大会造成晶格不匹配，导致成膜质量变差。
发明内容
为缓解或解决现有技术中的上述问题，减少封装薄膜应力集中，提出本发明。
根据本发明的实施例的一个方面，提出了一种MEMS器件组件，包括：
封装薄膜，用于形成封装所述MEMS器件的封装空间，所述封装薄膜具有顶部、边缘部和在顶部与边缘部之间的连接部，由所述边缘部、连接部和顶部限定所述封装空间，且所述边缘部设置于所述封装表面，
其中：
所述连接部为弧形。
可选的，所述封装薄膜与所述封装表面形成的夹角在2度-45度的范围内。
可选的，所述封装薄膜与所述封装表面形成的夹角在10度-20度的范围内。
可选的，所述封装空间为弧形空间。
可选的，所述弧形空间的内侧表面的最高点到所述封装表面的垂直距离在0.5微米到10微米之间。可选的，所述弧形空间的内侧表面的最高 点到所述MEMS器件的垂直距离H在0.5微米到10微米之间。
可选的，所述顶部大致平坦。
可选的，所述边缘部与所述连接部一体为弧形；或者所述边缘部具有向封装空间凸出的弧形部分。
可选的，所述封装空间在所述封装薄膜与所述封装表面的相接处的边界形状为弧形。
可选的，所述MEMS器件包括空气隙结构。
可选的，所述MEMS器件设置有与所述空气隙结构相通的第一释放孔，所述第一释放孔位于所述封装空间内；所述封装薄膜设置有与封装空间相通的第二释放孔，第二释放孔中填充有密封材料；且在垂直投影中，至少一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um。
进一步可选的，在垂直投影中，所述第二释放孔与对应的第一释放孔重合或者部分重合。
进一步可选的，在垂直投影中，每一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um。
可选的，所述MEMS器件设置有与所述空气隙结构相通的第一释放孔，所述第一释放孔位于所述封装空间的外侧；所述封装薄膜设置有与封装空间相通的第二释放孔，第二释放孔中填充有密封材料。
进一步可选的，所述封装薄膜覆盖并密封所述第一释放孔。
可选的，所述MEMS器件为体声波谐振器。
进一步的，所述谐振器为包括声学镜空腔的薄膜体声波谐振器。
根据本发明的实施例的另一方面，提出了一种电子设备，包括上述的MEMS器件组件。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为示出现有技术的薄膜体声波谐振器的封装的剖面示意图；
图2为根据本发明的一个示例性实施例的已经进行了薄膜封装的薄膜体声波谐振器的俯视示意图；
图3为沿图2中的A-A向截得的示意性剖视图；
图4为示出根据本发明的一个示例性实施例的已经进行了薄膜封装的薄膜体声波谐振器的剖视图；
图5为示出根据本发明的另一个示例性实施例的已经进行了薄膜封装的薄膜体声波谐振器的剖视图；
图6为示出根据本发明的再一个示例性实施例的已经进行了薄膜封装的薄膜体声波谐振器的剖视图。
图7为示出根据本发明的又一个示例性实施例的已经进行了薄膜封装的薄膜体声波谐振器的剖视图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
下面参照附图2-3，以薄膜体声波谐振器的封装为例，示例性描述根据本发明的实施例的MEMS器件的薄膜封装。
在图2中，10为谐振器的底部空腔(对应于空气隙结构)，也可以布拉格反射层等任何形式的声反射镜，20为谐振器底部空腔的释放孔；11为谐振器的底电极，12为谐振器的压电层，13为谐振器的顶电极；14为封装薄膜，15为封装薄膜上的释放孔。
在图3中示出了压电层12，封装薄膜14，封装薄膜上的释放孔15，密封释放孔15的密封层16等，以及封装薄膜在谐振器顶部形成的封装空间17。
如图3所示，形成封装空间17的封装薄膜14的部分为弧形，其与谐振器的封装平面(在图3中为压电层12的上表面，需要明确的是，基于不同的MEMS器件以及基于不同的要求，封装平面可以不同)之间形成 一夹角α。弧形的封装薄膜能有效减小薄膜中应力集中的现象，进而可以避免谐振器的封装薄膜因应力过大而发生开裂的现象，从而能够提高封装结构中多层膜的粘附性以及机械性能，使封装后的谐振器更为稳定、可靠，密封性能更为良好。
基于以上，为解决或者缓解图1中附图标记18处的应力集中的问题，本发明提出了如下用于封装MEMS器件的封装薄膜：所述封装薄膜具有顶部、边缘部和在顶部与边缘部之间的连接部，由所述边缘部、连接部和顶部限定所述封装空间，且所述边缘部设置于所述封装表面，其中：所述连接部为弧形。
例如参见图3，边缘部、连接部和顶部一起形成为弧形，而连接部的弧形则为整个弧形的一部分。
再如，参见图6，其中的附图标记61指示的边界部分显示为与顶部与边缘部相接的连接部为弧形。由于边界61的形状为弧状，因此能够减小应力的集中，使得封装结构更为稳定、可靠。
又如，参见图7，除了边界或者连接部为弧形之外，封装薄膜的边缘部具有向封装空间凸出的弧形部分，例如，在图7的左侧，可以看到边缘部与连接部形成S形。弧形的形状能够减小应力的集中，使得封装结构更为稳定、可靠。
在本发明的示例性实施例中，例如图3，图4和图5，所述封装薄膜与所述封装表面形成的夹角α在2度-45度的范围内，进一步的，在10度-20度的范围内。例如，该夹角除了上述端点值之外，还可以为15度，30度等。
如本领域技术人员能够理解的，虽然本发明以薄膜体声波谐振器为例描述了薄膜封装，但是，本发明的技术方案也可以用于其他的适于薄膜封装的MEMS器件。
如图3所示，在可选的实施例中，所述MEMS器件包括空气隙结构，例如底部空腔10，其可以为在基底中刻蚀出的空腔结构或者为向上凸起的空腔结构，也可以为由高声阻抗材料和低声阻抗材料交替形成的布拉格反射结构等声波反射形式，在图3中为在基底中刻蚀出的空腔结构。在图3-4中，以薄膜体声波谐振器作为MEMS器件的示例进行说明。如本领域 技术人员能够理解的，下述说明也可适用于具有空气隙结构的其他MEMS器件。
虽然没有示出，在可选的实施例中，所述弧形空间的内侧表面的最高点到所述封装表面的垂直距离在0.5微米到10微米之间，例如为0.5微米，1微米和5微米等。
在可选的实施例中，所述MEMS器件设置有与所述空气隙结构相通的第一释放孔(例如，对应于释放孔20)，所述第一释放孔位于所述封装空间17内；所述封装薄膜14设置有与封装空间17相通的第二释放孔(例如，对应于释放孔15)，第二释放孔中填充有密封材料；且在垂直投影中，至少一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um。例如，在图3中，图中示出的最右侧的释放孔15与释放孔20之间的水平间距小于20um。
虽然没有示出，在可选的实施例中，在垂直投影中，所述第二释放孔与对应的第一释放孔重合或者部分重合，例如可以是图3中示出的最右侧的释放孔15与释放孔20的垂直投影重合或者部分重合。
虽然没有示出，在可选的实施例中，在垂直投影中，每一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um。例如，在图3中，并不存在设置于图3中左侧与中间的释放孔15，或者存在的其他释放孔15也与相应的释放孔20之间的水平间距小于20um。
基于图2与图3示出的实施例，由于在垂直投影中，至少一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um，可以获得如下技术效果：在封装空间17形成的过程中，药液通过释放孔15进入谐振器底部空气隙中后，能够快速循环流动出来，将药液残渣等带走，因此降低了药液残渣在空气隙中遗留的可能性，有利于提高谐振器或者MEMS器件的性能。
此外，在封装薄膜14的释放孔15处于谐振器或者MEMS器件的有效区域的两侧的情况下，在最后对封装薄膜的释放孔15进行密封的时候，即便有密封试剂掉落下来，也不会对谐振器或者MEMS器件的性能造成影响。
而且，在封装薄膜14设置释放孔15的位置位于空气隙10的释放孔 20的上方(两者在垂直投影重合或基本重合)的情况下，在形成封装薄膜时，不会在封装薄膜对应与释放孔10的位置处产生台阶，没有应力的聚集现象，从而使得谐振器或MEMS器件的封装结构更为稳定。
图4为示出根据本发明的一个示例性实施例的已经进行了薄膜封装的薄膜体声波谐振器的剖视图。如图4所示，该MEMS器件为薄膜体声波谐振器，包括：底部空腔10(对应于空气隙结构)，与空腔10连通的第一释放孔11，底电极12，压电层13，顶电极14，平坦层23，封装薄膜20，释放孔21，密封层22，密封空间24。如图4所示，所述第一释放孔位于所述封装空间17的外侧；所述封装薄膜设置有与封装空间相通的第二释放孔15，第二释放孔中填充有密封材料。如图4所示，所述封装薄膜覆盖并密封所述第一释放孔11。
基于图4的实施例，由于释放孔11在封装空间24之外，在形成封装薄膜20的过程中，释放孔便被密封住，所以在释放形成封装空间24的过程中，不会有药液残渣、颗粒等进入FBAR的底部空腔10中，因此谐振器的性能不会受到影响。而且，封装薄膜20上开孔21的位置和数量可灵活选择。在开孔位置上，能够省却与底部空腔释放孔11的对准工艺步骤，降低封装成本；同时可以增加开孔的数量，能够加快空腔24的形成。另外，对于相同面积的FBAR或者MEMS器件来说，将释放孔11封装在空腔24之外，能够减小封装空间24的面积，进而使得谐振器或者MEMS器件的封装尺寸得到减小。
图5所示为另一实施例的薄膜体声波谐振器示意图。其与图3结构基本相同，区别在于封装薄膜在封装表面所形成封装空腔的边界51处的形状，即在本实施例中边界的形状形成了向内弯曲的弧形。在本实施例中，由于边界51是向内弯曲的弧形，能够避免当封装薄膜所形成封装空腔的角度较小时，而导致的封装薄膜在边界处由于过尖而引起的薄膜应力过大，导致封装薄膜的断裂、使封装结构变得不稳定。
图6所示为再一实施例的薄膜体声波谐振器的剖视示意图，其与图3结构基本相同，区别在于封装薄膜的形状不同。在本实施例中，封装薄膜中，连接部为弧形，顶部为平坦形状。更具体的，连接部与边缘部一体为弧形，顶部为平坦形状。因为封装薄膜的顶部为平坦形状，在谐振器的顶 部则会形成平面的结构，便于其进行下一步的封装或者集成应用。
图7所示为又一实施例的薄膜体声波谐振器的剖视示意图，其与图3结构基本相同，区别在于封装薄膜的形状不同。在本实施例中，封装薄膜中，连接部的形状为过渡性圆弧形状即在与边缘部连接的圆弧是向内凹的、与顶部连接的圆弧是向外凹的。由于连接部是圆弧形状，能够避免当封装薄膜所形成封装空腔的角度较小时，而导致的封装薄膜在边界处由于过尖而引起的薄膜应力过大，导致封装薄膜的断裂、使封装结构变得不稳定。
在本发明中，电极组成材料可以是金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属形成。
压电层材料可以为氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等材料。
牺牲层材料可以为有机材料、聚合物、硅、非晶硅、二氧化硅、PSG、金属(如Ge、Ti、Cu)、金属氧化物(如MgO、ZnO)、光刻胶(如SU-8)等易溶性的材料。
封装薄膜材料可以为硅、二氧化硅、氮化硅、氮化铝、氧化铝、金属、光刻胶、高分子聚合物、石墨烯、纳米管、TOK DFR材料等；
密封层材料可以为二氧化硅等致密性的材料、聚合物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝等材料。根据本发明的实施例的另一方面，提出了一种电子设备，包括上述的MEMS器件组件。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (19)

  1. 一种MEMS器件组件，包括：
    MEMS器件，具有封装表面；
    封装薄膜，用于形成封装所述MEMS器件的封装空间，所述封装薄膜具有顶部、边缘部和在顶部与边缘部之间的连接部，由所述边缘部、连接部和顶部限定所述封装空间，且所述边缘部设置于所述封装表面，
    其中：
    所述连接部为弧形。
  2. 根据权利要求1所述的组件，其中：
    所述封装薄膜与所述封装表面形成的夹角在2度-45度的范围内。
  3. 根据权利要求2所述的组件，其中：
    所述封装薄膜与所述封装表面形成的夹角在10度-20度的范围内。
  4. 根据权利要求1所述的组件，其中：
    所述封装空间为弧形空间。
  5. 根据权利要求4所述的组件，其中：
    所述弧形空间的内侧表面的最高点到所述封装表面的垂直距离在0.5微米到10微米之间。
  6. 根据权利要求4所述的组件，其中：
    所述弧形空间的内侧表面的最高点到所述MEMS器件的垂直距离在0.5微米到10微米之间。
  7. 根据权利要求1所述的组件，其中：
    所述顶部大致平坦。
  8. 根据权利要求1或7所述的组件，其中：
    所述边缘部与所述连接部一体为弧形；或者
    所述边缘部具有向封装空间凸出的弧形部分。
  9. 根据权利要求1-8中任一项所述的组件，其中：
    所述封装空间在所述封装薄膜与所述封装表面的相接处的边界形状为弧形。
  10. 根据权利要求1-9中任一项所述的组件，其中：
    所述MEMS器件包括空气隙结构。
  11. 根据权利要求10所述的组件，其中：
    所述MEMS器件设置有与所述空气隙结构相通的第一释放孔，所述第一释放孔位于所述封装空间内；
    所述封装薄膜设置有与封装空间相通的第二释放孔，第二释放孔中填充有密封材料；且
    在垂直投影中，至少一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um。
  12. 根据权利要求11所述的组件，其中：
    在垂直投影中，所述第二释放孔与对应的第一释放孔重合或者部分重合。
  13. 根据权利要求11所述的组件，其中：
    在垂直投影中，每一个所述第二释放孔与对应的第一释放孔之间的水平间距小于20um。
  14. 根据权利要求10所述的组件，其中：
    所述MEMS器件设置有与所述空气隙结构相通的第一释放孔，所述第一释放孔位于所述封装空间的外侧；
    所述封装薄膜设置有与封装空间相通的第二释放孔，第二释放孔中填充有密封材料。
  15. 根据权利要求14所述的组件，其中：
    所述封装薄膜覆盖并密封所述第一释放孔。
  16. 根据权利要求1-15中任一项所述的组件，其中：
    所述MEMS器件为体声波谐振器。
  17. 根据权利要求16所述的组件，其中：
    所述谐振器为包括空气隙结构的薄膜体声波谐振器。
  18. 一种电子设备，包括根据权利要求1-17中任一项所述的MEMS器件组件。
  19. 根据权利要求18所述的电子设备，所述电子设备包括滤波器。
PCT/CN2020/076212 2019-03-12 2020-02-21 带弧形结构的薄膜封装的mems器件组件及电子设备 Ceased WO2020181976A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910186408.5 2019-03-12
CN201910186408.5A CN111010101B (zh) 2019-03-12 2019-03-12 带弧形结构的薄膜封装的mems器件组件及电子设备

Publications (1)

Publication Number Publication Date
WO2020181976A1 true WO2020181976A1 (zh) 2020-09-17

Family

ID=70110696

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/076212 Ceased WO2020181976A1 (zh) 2019-03-12 2020-02-21 带弧形结构的薄膜封装的mems器件组件及电子设备

Country Status (2)

Country Link
CN (1) CN111010101B (zh)
WO (1) WO2020181976A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115589212B (zh) * 2022-12-12 2023-04-11 成都频岢微电子有限公司 一种具有薄膜封装的体声波谐振器、制造方法及滤波器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1373556A (zh) * 2001-03-01 2002-10-09 安捷伦科技有限公司 制造薄膜体声谐振器的改进方法和以该法实现的薄膜体声谐振器结构
US20110090651A1 (en) * 2009-10-15 2011-04-21 Electronics And Telecommunications Research Institute Package structure
US20110121414A1 (en) * 2008-07-28 2011-05-26 Robert Bosch Gmbh Encapsulation, MEMS and Method of Selective Encapsulation
CN102449906A (zh) * 2010-03-18 2012-05-09 松下电器产业株式会社 Mems元件以及mems元件的制造方法
CN107196618A (zh) * 2017-02-16 2017-09-22 杭州左蓝微电子技术有限公司 薄膜体声波谐振器及其制备方法
CN108667437A (zh) * 2018-04-19 2018-10-16 中芯集成电路（宁波）有限公司 一种薄膜体声波谐振器及其制造方法和电子装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878111B2 (ja) * 2003-10-30 2012-02-15 日本碍子株式会社 セル駆動型圧電／電歪アクチュエータ及びその製造方法
JP4791766B2 (ja) * 2005-05-30 2011-10-12 株式会社東芝 Ｍｅｍｓ技術を使用した半導体装置
JP2008113401A (ja) * 2006-10-04 2008-05-15 Sony Corp 共振器、共振器の製造方法および通信装置
JP2008118241A (ja) * 2006-11-01 2008-05-22 Citizen Holdings Co Ltd 電子デバイス及びその製造方法
EP2378576A2 (en) * 2010-04-15 2011-10-19 Samsung LED Co., Ltd. Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package
DE102011004570A1 (de) * 2011-02-23 2012-08-23 Robert Bosch Gmbh Bauelementträger und Bauteil mit einem MEMS-Bauelement auf einem solchen Bauelementträger
WO2013172441A1 (ja) * 2012-05-18 2013-11-21 株式会社村田製作所 水晶振動子
CN102928153B (zh) * 2012-11-20 2014-10-22 中国科学院上海微系统与信息技术研究所 一种三维真空传感器及其制备方法
CN103840788A (zh) * 2012-11-26 2014-06-04 苏州工业园区阳晨封装技术有限公司 储能焊陶瓷封装外壳及使用该外壳的晶体振荡器
JP5807664B2 (ja) * 2013-08-07 2015-11-10 横河電機株式会社 振動式トランスデューサおよびその製造方法
DE102014117599B4 (de) * 2014-12-01 2016-06-16 Epcos Ag MEMS-Bauelement mit Dünnschicht-Abdeckung mit verbesserter Stabilität und Verfahren zur Herstellung
CN107181470B (zh) * 2016-03-10 2020-10-02 中芯国际集成电路制造(上海)有限公司 薄膜体声波谐振器、半导体器件及其制造方法
US10355659B2 (en) * 2016-03-11 2019-07-16 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US10432172B2 (en) * 2016-09-01 2019-10-01 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic filter device and method of manufacturing the same
CN107248520B (zh) * 2017-06-07 2019-10-01 京东方科技集团股份有限公司 一种掩模板、有机电致发光显示面板及其封装方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1373556A (zh) * 2001-03-01 2002-10-09 安捷伦科技有限公司 制造薄膜体声谐振器的改进方法和以该法实现的薄膜体声谐振器结构
US20110121414A1 (en) * 2008-07-28 2011-05-26 Robert Bosch Gmbh Encapsulation, MEMS and Method of Selective Encapsulation
US20110090651A1 (en) * 2009-10-15 2011-04-21 Electronics And Telecommunications Research Institute Package structure
CN102449906A (zh) * 2010-03-18 2012-05-09 松下电器产业株式会社 Mems元件以及mems元件的制造方法
CN107196618A (zh) * 2017-02-16 2017-09-22 杭州左蓝微电子技术有限公司 薄膜体声波谐振器及其制备方法
CN108667437A (zh) * 2018-04-19 2018-10-16 中芯集成电路（宁波）有限公司 一种薄膜体声波谐振器及其制造方法和电子装置

Also Published As

Publication number Publication date
CN111010101A (zh) 2020-04-14
CN111010101B (zh) 2026-03-10

Similar Documents

Publication Publication Date Title
CN111245397B (zh) 体声波谐振器及制造方法、体声波谐振器单元、滤波器及电子设备
CN111082777B (zh) 底电极为空隙电极的体声波谐振器、滤波器及电子设备
US7161448B2 (en) Acoustic resonator performance enhancements using recessed region
CN101908865B (zh) 体波谐振器及其加工方法
WO2021077712A1 (zh) 电极具有空隙层的体声波谐振器、滤波器及电子设备
US20230024466A1 (en) Film piezoelectric acoustic resonator, filter and electronic apparatus
CN103532516A (zh) 体波谐振器及其制造方法
CN111817682A (zh) 一种薄膜体声波谐振器及其制备方法
CN209844929U (zh) 带断裂结构体声波谐振器、滤波器和电子设备
WO2020177557A1 (zh) 释放孔位于封装空间内的mems器件的封装
WO2020177558A1 (zh) 释放孔位于封装空间外的mems器件的封装
CN109257026A (zh) 柔性基底薄膜体声波谐振器及其形成方法
CN111245400A (zh) 具有桥部插入结构的体声波谐振器、滤波器和电子设备
CN112003581A (zh) 体声波谐振器
CN111010108A (zh) 带凹陷和空气翼结构的体声波谐振器、滤波器及电子设备
WO2021135134A1 (zh) 一种薄膜压电声波谐振器及其制造方法及滤波器
CN111313859A (zh) 体声波谐振器及其制造方法、滤波器及电子设备
CN111010110A (zh) 考虑距离的薄膜封装的mems器件组件及电子设备
CN111010102B (zh) 考虑形状的薄膜封装的mems器件组件及电子设备
CN213693649U (zh) 体声波谐振器
WO2020181976A1 (zh) 带弧形结构的薄膜封装的mems器件组件及电子设备
CN113037245B (zh) 基于压电薄膜换能的石英谐振器以及电子设备
CN212305272U (zh) 一种薄膜体声波谐振器
CN115603697B (zh) 一种声波谐振器及其制造方法、滤波器和电子设备
JP2013093797A (ja) 水晶振動デバイス

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20771130

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20771130

Country of ref document: EP

Kind code of ref document: A1