WO2020179899A1 - ダイボンディングシート、及びフィルム状接着剤付き半導体チップの製造方法 - Google Patents

ダイボンディングシート、及びフィルム状接着剤付き半導体チップの製造方法 Download PDF

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WO2020179899A1
WO2020179899A1 PCT/JP2020/009596 JP2020009596W WO2020179899A1 WO 2020179899 A1 WO2020179899 A1 WO 2020179899A1 JP 2020009596 W JP2020009596 W JP 2020009596W WO 2020179899 A1 WO2020179899 A1 WO 2020179899A1
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Prior art keywords
adhesive
film
base material
die bonding
bonding sheet
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PCT/JP2020/009596
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English (en)
French (fr)
Japanese (ja)
Inventor
渉 岩屋
陽輔 佐藤
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リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to KR1020217028310A priority Critical patent/KR102672961B1/ko
Priority to CN202080018411.7A priority patent/CN113508167B/zh
Priority to JP2021503660A priority patent/JP7141516B2/ja
Publication of WO2020179899A1 publication Critical patent/WO2020179899A1/ja
Priority to JP2022102074A priority patent/JP7141567B2/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Definitions

  • the present invention relates to a method for manufacturing a die bonding sheet and a semiconductor chip with a film-like adhesive.
  • the present application claims priority based on Japanese Patent Application No. 2019-041885 filed in Japan on March 7, 2019, the contents of which are incorporated herein by reference.
  • a semiconductor chip with a film-like adhesive including a semiconductor chip and a film-like adhesive provided on the back surface thereof is used.
  • the back surface of the semiconductor chip means a surface on the side opposite to the surface on which the circuit of the semiconductor chip is formed (in this specification, it may be abbreviated as "circuit forming surface”). ..
  • the semiconductor chip with a film-like adhesive is manufactured, for example, by the method shown below. That is, first, a back-grinding tape (also known as a surface protection tape) is attached to a surface of a semiconductor wafer on which a circuit is formed (which may be abbreviated as “circuit formation surface” in this specification). .. Next, a modified layer is formed inside the semiconductor wafer by irradiating with laser light so as to focus on a focus set inside the semiconductor wafer. Next, the thickness of the semiconductor wafer is aimed at by grinding the surface of the semiconductor wafer opposite to the circuit forming surface (in this specification, it may be abbreviated as "back surface”) using a grinder.
  • a back-grinding tape also known as a surface protection tape
  • a modified layer is formed inside the semiconductor wafer by irradiating with laser light so as to focus on a focus set inside the semiconductor wafer.
  • the thickness of the semiconductor wafer is aimed at by grinding the surface of the semiconductor wafer opposite to the
  • the semiconductor wafer is divided at the formation site of the modified layer to form a plurality of semiconductor chips by adjusting the value to be adjusted and using the grinding force applied to the semiconductor wafer at this time.
  • the method of dividing a semiconductor wafer that involves the formation of a modified layer in this way is called stealth dicing (registered trademark).
  • stealth dicing registered trademark
  • the semiconductor wafer at the irradiation site is scraped off and the semiconductor is semiconductor. It is essentially completely different from laser dicing, which cuts a wafer from its surface.
  • one die bonding sheet is attached to the back surface (in other words, the ground surface) of these semiconductor chips fixed on the back grind tape after the above-mentioned grinding.
  • the die bonding sheet include those provided with a base material, and the pressure-sensitive adhesive layer and the film-like adhesive are laminated in this order on the base material.
  • the film-like adhesive in the die bonding sheet is attached to the back surface of the semiconductor chip in a softened state by heating to an appropriate temperature. Thereby, the die bonding sheet can be stably attached to the semiconductor chip.
  • the die bonding sheet is stretched in a direction parallel to the surface (for example, the surface of the film adhesive to be attached to the semiconductor chip) while cooling, a so-called expand.
  • the film-like adhesive is cut (divided) along the outer periphery of the semiconductor chip.
  • the laminated sheet of the base material and the pressure-sensitive adhesive layer is stretched in a direction parallel to the surface of the semiconductor chip with the film-like adhesive while being placed on the laminated sheet. Expand). Further, while maintaining this state, the peripheral portion of the laminated sheet on which the semiconductor chip with the film-like adhesive is not placed is heated. As described above, while shrinking the peripheral portion, the distance between adjacent semiconductor chips (sometimes referred to as "calf width" in the present specification) is appropriately maintained on the laminated sheet. ..
  • the semiconductor chip with the film-like adhesive is separated from the laminated sheet and picked up.
  • picking up is facilitated by curing the pressure-sensitive adhesive layer to reduce the adhesiveness.
  • a semiconductor chip with a film-like adhesive used for manufacturing a semiconductor device can be stably obtained.
  • the picked-up semiconductor chip is die-bonded to the circuit forming surface of the substrate by a film adhesive provided on the back surface of the semiconductor chip, and if necessary, one or more other semiconductor chips are laminated. After wire bonding, the whole is sealed with resin. Finally, the target semiconductor device is manufactured using the semiconductor package thus obtained.
  • the dicing sheet provided with the film-like adhesive that can be cut by expanding includes a base material, an adhesive layer, a base material layer (corresponding to an intermediate layer), and an adhesive adhesive layer (the film).
  • a dicing-die bonding tape (corresponding to the die bonding sheet) in which the base material layer has a tensile property in a specific range is disclosed. 1). According to this die bonding sheet, since the base material layer corresponding to the intermediate layer is provided, it is possible to cut the film adhesive with high accuracy during expansion.
  • the film-like adhesive in the die-bonding sheet is attached to the semiconductor chip while being heated, or the peripheral edge of the die-bonding sheet in an expanded state after cutting the film-like adhesive. It is desired that the distance between adjacent semiconductor chips, that is, the kerf width, be maintained sufficiently wide and highly uniform in the subsequent steps by heating the portions. If a process involving such a temperature change can be stably performed, a high quality semiconductor chip with a film adhesive can be stably obtained. On the other hand, it is not clear whether the die bonding sheet disclosed in Patent Document 1 has such characteristics sufficiently.
  • the present invention is configured to include a base material, an adhesive layer, and a film-like adhesive, and can be stably attached to a semiconductor chip while being attached while being heated, and when the film-like adhesive is expanded after being cut. Moreover, it is an object of the present invention to provide a die bonding sheet capable of maintaining a sufficiently wide kerf width and high uniformity.
  • the present invention comprises a base material, the base material having an adhesive layer, an intermediate layer, and a film-like adhesive laminated in this order on the base material, and having a size of 4.5 mm ⁇ 15 mm.
  • the displacement amount X 0 of the test piece when the temperature is 23 ° C. is measured without changing the temperature of the test piece with a load of 2 g.
  • the displacement of the test piece after the displacement amount X 0 is measured, when the temperature of the test piece is raised to 20 ° C./min, the load is 2 g, and the temperature reaches 70 ° C.
  • the maximum width of the intermediate layer may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm.
  • the value of [tensile elastic modulus of the intermediate layer at 0°C]/[tensile elastic modulus of the base material at 0°C] is preferably 0.5 or less.
  • the present invention is a method for manufacturing a semiconductor chip with a film-like adhesive, which comprises a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, and focuses on a focus set inside the semiconductor wafer.
  • a step of dividing the semiconductor wafer at the formation site of the modified layer to obtain a group of semiconductor chips in which a plurality of semiconductor chips are aligned by utilizing the applied force during grinding, and the die bonding sheet.
  • the step of attaching the film-like adhesive therein to the back surfaces of all the semiconductor chips in the semiconductor chip group and the die bonding sheet after being attached to the semiconductor chip group are cooled while heating. However, by stretching in a direction parallel to the surface, the film-like adhesive is cut along the outer periphery of the semiconductor chip, and a plurality of the film-like adhesive-attached semiconductor chips are aligned.
  • the step of obtaining the group of semiconductor chips with an adhesive and the laminated sheet of the base material, the pressure-sensitive adhesive layer and the intermediate layer derived from the die-bonding sheet after obtaining the group of semiconductor chips with a film-like adhesive are attached to the adhesive.
  • the step of pulling the semiconductor chip with a film-like adhesive from the intermediate layer in the laminated sheet after heating the portion and picking it up is provided, and the maximum value of the width of the intermediate layer and the semiconductor Provided is a method for manufacturing a semiconductor chip with a film adhesive, which has a difference between the maximum width of a wafer and a maximum value of 0 to 10 mm.
  • the present invention is configured to include a base material, an adhesive layer and a film-like adhesive, and can be stably attached when it is attached to a semiconductor chip while heating, and it expands after cutting the film-like adhesive.
  • a die bonding sheet capable of maintaining a sufficiently wide kerf width and high uniformity.
  • FIG. 3 is a plan view schematically showing an evaluation target in order to explain measurement points of the kerf width during evaluation of kerf retention in Examples.
  • the die bonding sheet according to the embodiment of the present invention includes a base material, and an adhesive layer, an intermediate layer, and a film-like adhesive are laminated in this order on the base material.
  • a test piece of the base material having a size of 4.5 mm ⁇ 15 mm was prepared, and the temperature of the test piece was adjusted to 2 g using a thermomechanical analyzer without changing the temperature of the test piece.
  • the displacement amount X 0 when is 23 ° C. is measured, and the temperature of the test piece after the displacement amount X 0 is measured is 70 ° C. with a heating rate of 20 ° C./min and a load of 2 g.
  • heating time change rate time (herein, sometimes simply referred to as “heating time change rate”) change rate is 0 to 2 percent, calculated by the formula (2) :( X 2 -X 1 ) / 15 ⁇ 100
  • rate of change during cooling is -2 to 0%, and the formula (3).
  • (X 2- X 0 ) / 15 ⁇ 100, the total rate of change of the displacement of the test piece (in this specification, it may be simply abbreviated as “total rate of change”) is -2. It is ⁇ 1%.
  • the rate of change during heating is equal to or less than the upper limit value, expansion of the base material during heating is suppressed, so that the film-like adhesive is used while heating the die bonding sheet.
  • the rate of change during heating does not have a negative value.
  • the film-like adhesive is cut, and the base material, the pressure-sensitive adhesive layer and the intermediate layer are thickened in this order.
  • the distance (calf width) between adjacent semiconductor chips is adjusted while heating and shrinking the peripheral edge of the laminated sheet having a laminated structure in the direction, the calf width is sufficiently widened.
  • the base material does not expand when it is allowed to cool, the rate of change when allowed to cool does not take a positive value.
  • the “laminated sheet” means a laminated sheet having a configuration in which the above-mentioned base material, pressure-sensitive adhesive layer and intermediate layer are laminated.
  • the die bonding sheet of the present embodiment has the same effect as the case where the rate of change during cooling is equal to or greater than the lower limit value when the total rate of change is equal to or greater than the lower limit value. Further, when the total rate of change is equal to or less than the upper limit value, the laminated sheet is sufficiently shrunk when the peripheral edge thereof is heated and shrunk while the laminated sheet is expanded as described above, and as a result, the calf width is increased. Can be maintained with high uniformity.
  • the die bonding sheet of the present embodiment is preferably used for a semiconductor wafer after dicing.
  • the semiconductor wafer after dicing is a state in which a plurality of semiconductor chips are pre-arranged, or a plurality of semiconductor chips arranged in this way, and other semiconductors in the semiconductor wafer. Examples include areas that are not divided into chips.
  • Such an object of use of the die bonding sheet is obtained, for example, by dicing a semiconductor wafer as follows. That is, first, the back grind tape (surface protection tape) is attached to the surface of the semiconductor wafer on the side where the circuit is formed (that is, the circuit forming surface). Next, a modified layer is formed inside the semiconductor wafer by irradiating with laser light so as to focus on a focus set inside the semiconductor wafer. The position of the focus at this time is a planned dividing (dicing) position of the semiconductor wafer, and is set so that a desired size, shape and number of semiconductor chips can be obtained from the semiconductor wafer. Next, using a grinder, the surface of the semiconductor wafer opposite to the circuit formation surface (that is, the back surface) is ground.
  • the back grind tape surface protection tape
  • the thickness of the semiconductor wafer is adjusted to the desired value, and the force applied to the semiconductor wafer at the time of grinding is used to divide the semiconductor wafer at the formation site of the modified layer.
  • the modified layer of the semiconductor wafer is denatured by irradiation with laser light, and its strength is weakened. Therefore, by applying a force to the semiconductor wafer on which the modified layer is formed, the force is applied to the modified layer inside the semiconductor wafer, the semiconductor wafer is cracked at the site of the modified layer, and a plurality of semiconductor chips are formed. can get. Note that, depending on the conditions of this grinding, division into semiconductor chips may not be performed in a partial region of the semiconductor wafer.
  • FIG. 1 is a sectional view schematically showing a die bonding sheet according to an embodiment of the present invention
  • FIG. 2 is a plan view of the die bonding sheet shown in FIG. 2 and subsequent figures, the same components as those shown in the already-described figures are denoted by the same reference numerals as those in the already-illustrated figures, and the detailed description thereof will be omitted.
  • the die bonding sheet 101 shown here includes a base material 11, and the pressure-sensitive adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 are laminated in this order on the base material 11.
  • the die bonding sheet 101 further includes a release film 15 on the film-like adhesive 14.
  • the pressure-sensitive adhesive layer 12 is provided on one surface (hereinafter, may be referred to as “first surface”) 11a of the base material 11, and the base material 11 of the pressure-sensitive adhesive layer 12 is provided.
  • the intermediate layer 13 is provided on the surface (hereinafter, may be referred to as "first surface") 12a opposite to the side on which the intermediate layer 13 is provided, and the side on which the adhesive layer 12 of the intermediate layer 13 is provided.
  • first surface a film-like adhesive 14 on the opposite surface (hereinafter, may be referred to as “first surface”) 13a, which is opposite to the side on which the intermediate layer 13 of the film-like adhesive 14 is provided.
  • the release film 15 is provided on the side surface (hereinafter, may be referred to as “first surface”) 14a.
  • the die bonding sheet 101 is configured by laminating the base material 11, the pressure-sensitive adhesive layer 12, the intermediate layer 13, and the film adhesive 14 in this order in the thickness direction thereof.
  • the circuit formation of the first surface 14a of the film adhesive 14 in the state where the release film 15 is removed is a semiconductor chip or a semiconductor wafer (not shown) which is not completely divided. It is attached to the surface opposite to the surface (that is, the back surface) and used.
  • a laminate containing a base material and an adhesive layer may be referred to as a "support sheet”.
  • reference numeral 1 is attached to the support sheet.
  • the intermediate layer 13 and the film-like adhesive 14 are viewed in a plan view from above, they are both circular in shape, and the diameter of the intermediate layer 13 and the diameter of the film-like adhesive 14 are the same. .. Then, in the die bonding sheet 101, the intermediate layer 13 and the film-like adhesive 14 have their centers aligned with each other, in other words, the positions of the outer circumferences of the intermediate layer 13 and the film-like adhesive 14 are in their radial directions. They are arranged so that they all match.
  • the first surface 13a of the intermediate layer 13 and the first surface 14a of the film adhesive 14 are both smaller in area than the first surface 12a of the pressure-sensitive adhesive layer 12.
  • the maximum value (that is, diameter) of the width W 13 of the intermediate layer 13 and the maximum value (that is, diameter) of the width W 14 of the film-like adhesive 14 are both the maximum value of the width of the pressure-sensitive adhesive layer 12 and the maximum value. It is smaller than the maximum width of the base material 11. Therefore, in the die bonding sheet 101, a part of the first surface 12a of the pressure-sensitive adhesive layer 12 is not covered with the intermediate layer 13 and the film-like adhesive 14.
  • the release film 15 is directly contacted and laminated in the region of the first surface 12a of the pressure-sensitive adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, and the release film 15 is laminated. In the removed state, this region is exposed (hereinafter, this region may be referred to as “non-laminated region” in this specification).
  • the release film 15 is laminated as shown here in the region of the pressure-sensitive adhesive layer 12 that is not covered by the intermediate layer 13 and the film-like adhesive 14. There may be areas that are not.
  • the die bonding sheet 101 is a ring frame for fixing a semiconductor wafer to a part of the non-laminated region of the pressure-sensitive adhesive layer 12 in a state where the film adhesive 14 is uncut and attached to the above-mentioned semiconductor chip or the like. It can be fixed by attaching it to a jig such as. Therefore, it is not necessary to separately provide the die bonding sheet 101 with an adhesive layer for jigs for fixing the die bonding sheet 101 to the jig. Further, since it is not necessary to provide the adhesive layer for the jig, the die bonding sheet 101 can be manufactured inexpensively and efficiently.
  • the die bonding sheet 101 has an advantageous effect by not including the jig adhesive layer, but may have the jig adhesive layer.
  • the jig adhesive layer is provided in a region near the peripheral edge of the surface of any of the layers constituting the die bonding sheet 101. Examples of such a region include a region on the first surface 12a of the pressure-sensitive adhesive layer 12 that is not covered by the intermediate layer 13 and the film-like adhesive 14.
  • the adhesive layer for jigs may be a known one.
  • it may have a single-layer structure containing an adhesive component, or layers containing an adhesive component are laminated on both sides of a sheet serving as a core material. It may have a multi-layer structure.
  • the die bonding sheet 101 when the die bonding sheet 101 is stretched in a direction parallel to its surface (for example, the first surface 12a of the pressure-sensitive adhesive layer 12), so-called expanding, the first surface of the pressure-sensitive adhesive layer 12 is performed.
  • the presence of the non-laminated region in 12a makes it possible to easily expand the die bonding sheet 101. Then, not only the film adhesive 14 can be easily cut, but also peeling of the intermediate layer 13 and the film adhesive 14 from the pressure-sensitive adhesive layer 12 may be suppressed.
  • thermomechanical analysis (sometimes referred to as “TMA” in the present specification).
  • TMA thermomechanical analysis
  • X 1 is usually the amount of displacement when the temperature of the test piece is 70 ° C. Further, usually, the condition of X 1 ⁇ X 0 is satisfied.
  • TMA is continuously performed, and the test piece after measuring X 1 is allowed to cool under a temperature condition of 23 ° C. with a load of 2 g, and the minimum value X 2 of the displacement amount of the test piece at this time is measured. .. X 2 is usually the amount of displacement when the temperature of the test piece does not fluctuate due to cooling (in other words, it becomes the lowest). Since X 0 , X 1 and X 2 are continuously measured by a series of TMAs, all of these measurement directions are the same.
  • the load applied to the test piece is a constant value.
  • X 0 and X 1 thus obtained are used to calculate the formula (1): (X 1- X 0 ) / 15 x 100
  • the rate of change of the displacement of the test piece during heating calculated in step 2 is 0 to 2%.
  • the equation (2) (X 2 -X 1) / 15 ⁇ 100
  • the change rate of the displacement amount of the test piece during cooling, calculated by, becomes ⁇ 2 to 0%.
  • the equation (3) (X 2- X 0 ) / 15 ⁇ 100
  • the total change rate of the displacement amount of the test piece calculated in step 2 is -2 to 1%.
  • the die bonding sheet of the present embodiment is not limited to the one shown in FIGS. 1 and 2, and a part of the configurations shown in FIGS. 1 and 2 are changed or deleted within the range not impairing the effect of the present invention. Alternatively, it may be added.
  • the die bonding sheet of the present embodiment does not correspond to any of the base material, the pressure-sensitive adhesive layer, the intermediate layer, the film-like adhesive, the release film, and the adhesive layer for jigs. It may have a layer of.
  • the die bonding sheet of the present invention is provided with an adhesive layer in direct contact with the base material, an intermediate layer in direct contact with the adhesive layer, and a film-like adhesive. It is preferably provided in a state of being in direct contact with the intermediate layer.
  • the planar shapes of the intermediate layer and the film-like adhesive may be shapes other than the circular shape, and the planar shapes of the intermediate layer and the film-like adhesive are the same as each other. It may be different or it may be different.
  • the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are both the areas of the layers on the substrate side (for example, the first surface of the pressure-sensitive adhesive layer). It is preferable that they are smaller than each other, and they may be the same or different from each other.
  • the positions of the intermediate layer and the outer periphery of the film-like adhesive may or may not be the same in these radial directions.
  • the base material is in the form of a sheet or a film.
  • the constituent material of the base material is preferably various resins, and specifically, for example, polyethylene (low density polyethylene (LDPE), linear low density polyethylene (LLDPE), high density polyethylene (HDPE, etc.)), Polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene/ethylene butylene/styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane Acrylic, polyimide (PI), ionomer resin, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, ethylene / (meth) acrylic acid copolymer and ethylene / (meth) acrylic Examples thereof include ethylene copolymers other than acid ester copo
  • (meth) acrylic acid is a concept including both “acrylic acid” and “methacrylic acid”.
  • (meth)acrylate is a concept including both “acrylate” and “methacrylate”
  • (meth)acryloyl group Is a concept that includes both an “acryloyl group” and a “methacryloyl group”.
  • the resin constituting the base material may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the constituent material of the base material is preferably polyethylene, and more preferably low density polyethylene (LDPE), in that the rate of change during heating, the rate of change during cooling, and the total rate of change can be more easily adjusted. preferable.
  • LDPE low density polyethylene
  • the substrate may be composed of one layer (single layer) or may be composed of two or more layers.
  • the base material is composed of a plurality of layers
  • the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited as long as the effects of the present invention are not impaired.
  • the plural layers may be the same or different from each other” means “all the layers may be the same or all the layers may be different”. It may mean that only some of the layers may be the same, and further, "multiple layers are different from each other” means that "at least one of the constituent materials and the thickness of each layer is different from each other". Means that.
  • the thickness of the base material can be appropriately selected depending on the purpose, but is preferably 50 to 300 ⁇ m, more preferably 60 to 150 ⁇ m.
  • the thickness of the base material is at least the above lower limit value, the structure of the base material is more stabilized.
  • the thickness of the base material is not more than the upper limit value, the cutability of the film-like adhesive is further improved when the die bonding sheet is expanded.
  • the die bonding sheet after cutting the film adhesive is expanded (in other words, when the laminated sheet is expanded), the effect of keeping the kerf width sufficiently wide and highly uniform is further enhanced.
  • the “thickness of the base material” means the thickness of the whole base material, and for example, the thickness of the base material composed of a plurality of layers means the total thickness of all layers constituting the base material. means.
  • the base material is roughened by sandblasting, solvent treatment, embossing, etc. in order to improve adhesion to other layers such as the pressure-sensitive adhesive layer provided on it; corona discharge treatment, electron beam irradiation treatment, etc. , Plasma treatment, ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, or other oxidation treatment; and the like.
  • the surface of the base material may be primed.
  • the base material is an antistatic coat layer; a layer that prevents the base material from adhering to other sheets or adhering to the adsorption table when the die bonding sheets are stacked and stored; etc. May have.
  • the base material contains various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst and a softening agent (plasticizer) in addition to the main constituent materials such as the resin. You may.
  • a film or sheet made of a resin has anisotropy depending on the manufacturing method thereof.
  • a film or sheet manufactured by molding a resin usually has characteristics in a resin flow direction (Machine Direction) at the time of resin molding and a direction (Transverse Direction) orthogonal to the resin flow direction. It is subject to change and this is well known.
  • the resin flow direction may be referred to as “MD”, and the direction orthogonal to the resin flow direction may be referred to as “TD”. It can be said that MD is a direction parallel to the flow of the film or sheet when processing the film or sheet, and TD is a direction orthogonal to the flow of the film or sheet.
  • MD is the stretching direction of the film or sheet
  • TD is the direction orthogonal to the stretching direction of such film or sheet.
  • the MD and TD of each layer can be distinguished from each other by optical analysis such as analysis of an X-ray two-dimensional diffraction image.
  • the film or sheet produced by molding the resin including the base material, the intermediate layer, the pressure-sensitive adhesive layer, the film-like adhesive, etc., may have MD and TD.
  • the MD of the base material base material 11 in the case of the die bonding sheet 101 shown in FIG. 1
  • the intermediate layer in the case of the die bonding sheet 101 shown in FIG. 1 described later are intermediate. It is preferred that the MD of layer 13) is matched. In other words, in the die bonding sheet, it is preferable that the TD of the base material and the TD of the intermediate layer match. In the die bonding sheet in which the base material and the intermediate layer are arranged in this way, the easiness of expansion (expandability) becomes more uniform regardless of the direction.
  • the cuttability of the film adhesive by expanding is further improved, and during the cutting of the film adhesive, the region between the semiconductor chips, the so-called kerf, is more stable. It is formed and the width of this region (ie, the calf width) is also more uniform. Further, since the kerf width becomes uniform in this way, the effect of suppressing the occurrence of process defects is significantly enhanced when picking up a semiconductor chip with a film adhesive to be described later.
  • the rate of change during heating of the test piece prepared from the base material is 0 to 2% as described above, for example, 0. .About.1.6%, 0 to 1.2%, and 0 to 0.9%, or 0.2 to 2%, 0.4 to 2%, and 0.6 to 2 %, or any of 0.2 to 1.6%, 0.4 to 1.2%, and 0.6 to 0.9%.
  • the rate of change during heating of the test piece may be the same or different between the two or more measurement directions.
  • two or more measurement directions of the rate of change during heating are two or more different directions of the directions parallel to the first surface of the test piece (corresponding to the first surface of the base material). ..
  • the rate of change in heating of the MD of the test piece and the rate of change in heating of the TD of the test piece may be the same or different from each other.
  • the rate of change during heating is 0 to 2% in any measurement direction of the test piece.
  • the rate of change during heating is 0 to 2% in both MD and TD, and is exemplified above in either one or both of MD and TD. It may be any of nine numerical ranges. In that case, the combination of the numerical range of the rate of change during heating in MD and the numerical range of the rate of change during heating in TD is arbitrary.
  • the rate of change during cooling of the test piece prepared from the base material is -2 to 0%, for example. , -2 to -0.4%, -2 to -0.8%, -2 to -1.2%, and -2 to -1.6%.
  • the rate of change of the test piece during cooling may be the same or different between the two or more measurement directions.
  • the measuring direction of the rate of change during cooling is 2 or more
  • the rate of change during cooling in MD of the test piece and the rate of change during cooling in TD of the test piece may be the same or different from each other. is there.
  • the rate of change during cooling is ⁇ 2 to 0% in any measurement direction of the test piece.
  • the rate of change during cooling is -2 to 0% in both MD and TD, and in either one or both of MD and TD, the rate of change is first. It may be any of the four numerical ranges illustrated. In that case, the combination of the numerical range of the rate of change during cooling in MD and the numerical range of the rate of change during cooling in TD is arbitrary.
  • the total rate of change of the test piece prepared from the base material is ⁇ 2 to 1% as described above, for example, ⁇ . It may be any of 2 to 0.6%, -2 to 0.3%, -2 to 0%, -2 to -0.3%, and -2 to -0.6%. It may be any of 1.8 to 1%, -1.6 to 1%, and -1.4 to 1%, or -1.8 to 0.6%, -1.8 to 0. It may be any of 3%, -1.8 to 0%, -1.6 to -0.3%, and -1.4 to -0.6%. Among them, the total rate of change of the test piece is preferably ⁇ 2 to 0%.
  • the total rate of change of the test piece may be the same or different between the two or more measurement directions.
  • the "measurement direction of the total rate of change of 2 or more” is the same as the above-mentioned "measurement direction of the rate of change during heating of 2 or more".
  • the total rate of change in the MD of the test piece and the total rate of change in the TD of the test piece may be the same or different from each other.
  • the total rate of change is ⁇ 2 to 1% in any measurement direction of the test piece.
  • the total rate of change is -2 to 1% in both MD and TD, and is exemplified above in either one or both of MD and TD. It may be any of the 13 numerical ranges. In that case, the combination of the numerical range of the total change rate in MD and the numerical range of the total change rate in TD is arbitrary.
  • the rate of change during heating is in any of the above nine numerical ranges, and the rate of change during cooling is in any of the above four numerical ranges. Yes, and the total rate of change may be in any of the above 13 numerical ranges.
  • the rate of change during heating in either one or both of MD and TD is 0.6 to 0.9%, and the change rate in one or both of MD and TD is said.
  • the rate of change during cooling is -2 to -1.6%, and the total rate of change in either or both of MD and TD is -1.4 to -0.6%. ..
  • the thickness of the test piece to be measured for the rate of change during heating, the rate of change during cooling, and the total rate of change is not particularly limited, and may be a thickness capable of performing these measurements with high accuracy. ..
  • the thickness of the test piece may be 10 to 200 ⁇ m.
  • the rate of change when heated, the rate of change when allowed to cool, and the total rate of change of the test piece prepared from the base material can be adjusted by adjusting the type and content of the components contained in the base material, for example, the resin.
  • ⁇ Tensile modulus Eb'of test piece prepared from base material> For a test piece having a width of 15 mm and a length of more than 100 mm, which is produced from the base material (base material 11 in the case of the die bonding sheet 101 shown in FIG. 1), the distance between chucks is 100 mm and the temperature is 0.
  • the tensile modulus Eb′ of the test piece at 0° C. in the elastic deformation region is measured by performing a tensile test in which the tensile rate is 200 mm/min using Tensilon
  • the Eb′ is, for example, 10 to It may be any of 200 MPa, 50 to 150 MPa, and 70 to 120 MPa.
  • Eb' is in such a range, adjustment of the tensile elastic modulus ratio Ei'/Eb' described later becomes easier.
  • the cutting of the film adhesive by the expansion of the die bonding sheet is preferably carried out at a temperature of 0° C. or in the vicinity thereof from the viewpoint that the cutting property is improved. Therefore, in the die bonding sheet, the tensile elastic modulus Eb'of the test piece prepared from the base material is defined by a value at 0 ° C. In the present embodiment, important physical properties that have a great influence on the expandability of the die bonding sheet are defined under the conditions of the temperature at which the die bonding sheet is actually expanded or a temperature in the vicinity thereof.
  • the Eb'of the test piece may be the same or different between the two or more measurement directions.
  • the "two or more measurement directions of Eb'" are two or more different directions among the directions parallel to the first surface of the test piece (corresponding to the first surface of the base material).
  • the Eb'in the MD of the test piece and the Eb'in the TD of the test piece may be the same or different from each other.
  • the tensile elastic modulus Eb′ may be, for example, in any of the three numerical ranges illustrated above in any measurement direction of the test piece.
  • Eb' may be any one or both of MD and TD in any of the three numerical ranges exemplified above.
  • the combination of the numerical range of Eb'in MD and the numerical range of Eb'in TD is arbitrary.
  • the thickness of the test piece which is the object of measurement of the tensile elastic modulus Eb′, is not particularly limited as long as it can perform these measurements with high accuracy.
  • the thickness of the test piece may be 10 to 200 ⁇ m.
  • the Eb'of the test piece prepared from the base material can be adjusted by adjusting the content of the base material, for example, the type and content of the resin.
  • the optical properties of the base material are not particularly limited as long as the effects of the present invention are not impaired.
  • the base material may be, for example, one that transmits laser light or energy rays.
  • the base material can be produced by a known method.
  • a base material containing a resin (using a resin as a constituent material) can be produced by molding the resin or a resin composition containing the resin.
  • the surface resistivity of the surface of the die-bonding sheet located on the side opposite to the pressure-sensitive adhesive layer side of the substrate may be 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the ratio can be set to 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the surface of the base material on which the antistatic layer is formed, which is located on the side opposite to the pressure-sensitive adhesive layer side may be referred to as the “outermost layer of the die bonding sheet”. Further, the surface of the antistatic base material located on the side opposite to the pressure-sensitive adhesive layer side may be referred to as "the outermost layer of the die bonding sheet”.
  • the adhesive layer is in the form of a sheet or a film and contains an adhesive.
  • the pressure-sensitive adhesive layer can be formed by using a pressure-sensitive adhesive composition containing the pressure-sensitive adhesive.
  • the pressure-sensitive adhesive composition can be formed on a target site by applying the pressure-sensitive adhesive composition to the surface on which the pressure-sensitive adhesive layer is to be formed and drying it as necessary.
  • the pressure-sensitive adhesive composition may be applied by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater. , A method using various coaters such as a Meyer bar coater and a knife coater.
  • the drying conditions of the pressure-sensitive adhesive composition are not particularly limited, but when the pressure-sensitive adhesive composition contains the solvent described below, it is preferable to heat-dry it, and in this case, for example, at 70 to 130° C. for 10 seconds to It is preferable to dry under the condition of 5 minutes.
  • the pressure-sensitive adhesive examples include adhesive resins such as acrylic resin, urethane resin, rubber-based resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester-based resin, and acrylic resin is preferable.
  • the "adhesive resin” includes both a resin having adhesiveness and a resin having adhesiveness.
  • the adhesive resin includes not only the resin itself having adhesiveness, but also a resin showing adhesiveness when used in combination with other components such as additives, and adhesiveness due to the presence of a trigger such as heat or water. Also included are resins and the like.
  • the pressure-sensitive adhesive layer may be either curable or non-curable, and may be, for example, either energy ray-curable or non-energy ray-curable.
  • the curable pressure-sensitive adhesive layer can easily adjust the physical properties before and after curing.
  • the “energy ray” means an electromagnetic wave or a charged particle beam having an energy quantum.
  • energy rays include ultraviolet rays, radiation, and electron rays.
  • Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet source.
  • the electron beam can be generated by an electron beam accelerator or the like.
  • “energy ray curable” means a property of being cured by irradiating with energy rays
  • non-energy ray curable is a property of not being cured by irradiating with energy rays. Means.
  • the pressure-sensitive adhesive layer may be composed of one layer (single layer), may be composed of two or more layers, and when composed of a plurality of layers, the plurality of layers may be the same or different from each other.
  • the combination of these plural layers is not particularly limited.
  • the thickness of the pressure-sensitive adhesive layer is preferably 1 to 100 ⁇ m, more preferably 1 to 60 ⁇ m, and particularly preferably 1 to 30 ⁇ m.
  • the "thickness of the pressure-sensitive adhesive layer” means the thickness of the entire pressure-sensitive adhesive layer, and for example, the thickness of the pressure-sensitive adhesive layer composed of a plurality of layers is the sum of all the layers constituting the pressure-sensitive adhesive layer. Means the thickness of.
  • the optical properties of the pressure-sensitive adhesive layer are not particularly limited as long as the effects of the present invention are not impaired.
  • the pressure-sensitive adhesive layer may be one that allows energy rays to pass through.
  • the pressure-sensitive adhesive composition will be described.
  • a pressure-sensitive adhesive composition containing an energy ray-curable pressure-sensitive adhesive that is, an energy ray-curable pressure-sensitive adhesive composition
  • an energy ray-curable pressure-sensitive adhesive composition for example, a non-energy ray-curable pressure-sensitive adhesive Adhesive composition (I-1) containing a resin (I-1a) (hereinafter, may be abbreviated as "adhesive resin (I-1a)") and an energy ray-curable compound; non-energy An energy ray-curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the linear curable adhesive resin (I-1a) (hereinafter referred to as "adhesive resin (I-2a)").
  • a pressure-sensitive adhesive composition (I-2) containing may be abbreviated); a pressure-sensitive adhesive composition (I-3) containing the pressure-sensitive resin (I-2a) and an energy ray-curable compound, etc.
  • a pressure-sensitive adhesive composition (I-2) containing
  • the pressure-sensitive adhesive composition (I-1) contains the non-energy ray-curable pressure-sensitive adhesive resin (I-1a) and the energy ray-curable compound.
  • the adhesive resin (I-1a) is preferably an acrylic resin.
  • the acrylic resin include an acrylic polymer having at least a structural unit derived from an alkyl (meth)acrylate ester.
  • the constitutional unit of the acrylic resin may be only one type, or two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the pressure-sensitive adhesive resin (I-1a) contained in the pressure-sensitive adhesive composition (I-1) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-1a) to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.
  • Examples of the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) include monomers or oligomers having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays.
  • examples of the monomer include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4 Multivalent (meth) acrylates such as -butylene glycol di (meth) acrylate, 1,6-hexanediol (meth) acrylate; urethane (meth) acrylate; polyester (meth) acrylate; polyether (meth) acrylate; epoxy ( Meta) acrylate and the like can be mentioned.
  • examples of the oligomer include oligomers obtained by polymerizing the above-exemplified monomers.
  • the energy ray-curable compound is preferably a urethane (meth)acrylate or a urethane (meth)acrylate oligomer in that it has a relatively large molecular weight and is unlikely to reduce the storage elastic modulus of the pressure-sensitive adhesive layer.
  • the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. ..
  • the ratio of the content of the energy ray-curable compound to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 1 to 95% by mass. It is more preferably to 90% by mass, and particularly preferably 10 to 85% by mass.
  • the pressure-sensitive adhesive composition (I) -1) preferably further contains a cross-linking agent.
  • the cross-linking agent reacts with the functional group to cross-link the adhesive resins (I-1a) with each other.
  • the cross-linking agent include tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, isocyanate cross-linking agents such as adducts of these diisocyanates (cross-linking agents having an isocyanate group); epoxy cross-linking agents such as ethylene glycol glycidyl ether ( Glycidyl group-containing cross-linking agent); Hexa[1-(2-methyl)-aziridinyl]triphosphatriazine and other aziridine-based cross-linking agents (aziridinyl-group-containing cross-linking agents); Aluminum chelate and other metal chelate-based cross-linking agents (metals) Crosslinking agent having a chelate structure); Isocyanurate-based crosslinking agent (crosslinking agent having an isocyanurate ske
  • the cross-linking agent contained in the pressure-sensitive adhesive composition (I-1) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the cross-linking agent in the pressure-sensitive adhesive composition (I-1) is 0.01 to 50 parts by mass with respect to 100 parts by mass of the content of the pressure-sensitive resin (I-1a). It is preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.
  • the pressure-sensitive adhesive composition (I-1) may further contain a photopolymerization initiator.
  • the pressure-sensitive adhesive composition (I-1) containing a photopolymerization initiator is sufficiently cured even when irradiated with a relatively low energy ray such as ultraviolet rays.
  • photopolymerization initiator examples include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, and benzoin dimethyl ketal; acetophenone, 2-hydroxy.
  • benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, and benzoin dimethyl ketal; acetophenone, 2-hydroxy.
  • Acetphenone compounds such as -2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one; bis (2,4,6-trimethylbenzoyl) phenylphosphine
  • Acylphosphine oxide compounds such as oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide
  • sulfide compounds such as benzylphenyl sulfide and tetramethylthium monosulfide
  • ⁇ -ketol compounds such as 1-hydroxycyclohexylphenylketone
  • azo Azo compounds such as bisisobutyronitrile
  • titanosen compounds such as titanosen
  • thioxanthone compounds such as thioxanthone
  • peroxide compounds diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone;
  • the photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-1) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1) is 0.01 to 20 parts by mass with respect to 100 parts by mass of the energy ray-curable compound.
  • the amount is preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (I-1) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired.
  • the other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust preventives, colorants (pigments, dyes), sensitizers, and tackifiers.
  • Known additives such as reaction retarders and cross-linking accelerators (catalysts).
  • the reaction retarder means, for example, that an unintended cross-linking reaction occurs in the pressure-sensitive adhesive composition (I-1) during storage due to the action of the catalyst mixed in the pressure-sensitive adhesive composition (I-1). It is a component for suppressing the progress.
  • the other additives contained in the pressure-sensitive adhesive composition (I-1) may be only one type, may be two or more types, and when there are two or more types, their combinations and ratios can be arbitrarily selected.
  • the content of the other additives in the pressure-sensitive adhesive composition (I-1) is not particularly limited, and may be appropriately selected depending on the type thereof.
  • the pressure-sensitive adhesive composition (I-1) may contain a solvent. Since the pressure-sensitive adhesive composition (I-1) contains a solvent, the suitability for coating on the surface to be coated is improved.
  • the solvent is preferably an organic solvent.
  • the pressure-sensitive adhesive composition (I-2) is an energy ray-curable pressure-sensitive adhesive resin in which an unsaturated group is introduced into the side chain of the non-energy ray-curable pressure-sensitive adhesive resin (I-1a). (I-2a) is contained.
  • the adhesive resin (I-2a) can be obtained, for example, by reacting a functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group.
  • the unsaturated group-containing compound can further bind to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a). It is a compound having a group.
  • the energy ray-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl group (ethenyl group), an allyl group (2-propenyl group), and the like, and a (meth)acryloyl group is preferable.
  • Examples of the group that can be bonded to the functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group that can be bonded to a hydroxyl group or an amino group, and a hydroxyl group and an amino group that can be bonded to a carboxy group or an epoxy group. And so on.
  • Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.
  • the pressure-sensitive adhesive resin (I-2a) contained in the pressure-sensitive adhesive composition (I-2) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-2a) to the total mass of the pressure-sensitive adhesive composition (I-2) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass.
  • the pressure-sensitive adhesive composition (I) -2) may further contain a cross-linking agent.
  • Examples of the cross-linking agent in the pressure-sensitive adhesive composition (I-2) include the same cross-linking agents as those in the pressure-sensitive adhesive composition (I-1).
  • the cross-linking agent contained in the pressure-sensitive adhesive composition (I-2) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of the cross-linking agent in the pressure-sensitive adhesive composition (I-2) is 0.01 to 50 parts by mass with respect to 100 parts by mass of the content of the pressure-sensitive resin (I-2a). It is preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.
  • the pressure-sensitive adhesive composition (I-2) may further contain a photopolymerization initiator.
  • the pressure-sensitive adhesive composition (I-2) containing the photopolymerization initiator is sufficiently cured even when irradiated with a relatively low energy ray such as ultraviolet rays.
  • Examples of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) include the same photopolymerization initiators in the pressure-sensitive adhesive composition (I-1).
  • the photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-2) may be only one type, or may be two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator is 0.01 to 100 parts by mass based on 100 parts by mass of the adhesive resin (I-2a).
  • the amount is preferably 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (I-2) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired. Further, the pressure-sensitive adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). Examples of the other additive and solvent in the pressure-sensitive adhesive composition (I-2) include the same as the other additives and solvent in the pressure-sensitive adhesive composition (I-1). The other additives and solvents contained in the pressure-sensitive adhesive composition (I-2) may be only one type, two or more types, or two or more types, and any combination and ratio thereof may be used. Can be selected. The contents of the other additives and the solvent of the pressure-sensitive adhesive composition (I-2) are not particularly limited, and may be appropriately selected depending on the type.
  • the pressure-sensitive adhesive composition (I-3) contains the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-2a) to the total mass of the pressure-sensitive adhesive composition (I-3) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.
  • Examples of the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) include monomers and oligomers having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays, and the pressure-sensitive adhesive composition. Examples thereof include the same energy ray-curable compounds contained in the substance (I-1).
  • the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. ..
  • the content of the energy ray-curable compound is 0.01 to 300 parts by mass based on 100 parts by mass of the adhesive resin (I-2a). It is preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass.
  • the pressure-sensitive adhesive composition (I-3) may further contain a photopolymerization initiator.
  • the pressure-sensitive adhesive composition (I-3) containing a photopolymerization initiator is sufficiently cured even when irradiated with a relatively low energy ray such as ultraviolet rays.
  • Examples of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) include the same photopolymerization initiators in the pressure-sensitive adhesive composition (I-1).
  • the photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-3) may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) is 100 parts by mass in total of the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.
  • the amount is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (I-3) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired. Further, the pressure-sensitive adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). Examples of the other additive and solvent in the pressure-sensitive adhesive composition (I-3) include the same as the other additives and solvent in the pressure-sensitive adhesive composition (I-1). The other additives and solvents contained in the pressure-sensitive adhesive composition (I-3) may be only one type, two or more types, or two or more types, and any combination and ratio thereof may be used. Can be selected. The contents of the other additives and the solvent in the pressure-sensitive adhesive composition (I-3) are not particularly limited, and may be appropriately selected depending on the type.
  • Examples of the pressure-sensitive adhesive composition other than the pressure-sensitive adhesive compositions (I-1) to (I-3) include non-energy ray-curable pressure-sensitive adhesive compositions as well as energy-ray-curable pressure-sensitive adhesive compositions.
  • Examples of the non-energy ray-curable pressure-sensitive adhesive composition include non-energy ray-curable pressure-sensitive adhesives such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, polycarbonate, and ester resin. Examples thereof include a pressure-sensitive adhesive composition (I-4) containing a sex resin (I-1a), and those containing an acrylic resin are preferable.
  • the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) preferably contain one or more cross-linking agents, and the content thereof is the above-mentioned pressure-sensitive adhesive composition. It can be the same as the case of (I-1) and the like.
  • Adhesive resin (I-1a) examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same as the adhesive resin (I-1a) in the adhesive composition (I-1).
  • the pressure-sensitive adhesive resin (I-1a) contained in the pressure-sensitive adhesive composition (I-4) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-1a) to the total mass of the pressure-sensitive adhesive composition (I-4) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.
  • the pressure-sensitive adhesive composition (I) -4) preferably further contains a cross-linking agent.
  • Examples of the cross-linking agent in the pressure-sensitive adhesive composition (I-4) include the same cross-linking agents as those in the pressure-sensitive adhesive composition (I-1).
  • the cross-linking agent contained in the pressure-sensitive adhesive composition (I-4) may be only one kind, or two or more kinds, and when there are two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the content of the crosslinking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of the content of the adhesive resin (I-1a), It is more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass.
  • the pressure-sensitive adhesive composition (I-4) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired. Further, the pressure-sensitive adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). Examples of the other additive and solvent in the pressure-sensitive adhesive composition (I-4) include the same as the other additive and solvent in the pressure-sensitive adhesive composition (I-1), respectively.
  • the other additives and solvents contained in the pressure-sensitive adhesive composition (I-4) may be only one type, two or more types, or two or more types, and any combination and ratio thereof may be used. Can be selected.
  • the contents of the other additives and the solvent in the pressure-sensitive adhesive composition (I-4) are not particularly limited, and may be appropriately selected depending on the type.
  • the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) and the pressure-sensitive adhesive compositions (I-1) to (I-3) such as the pressure-sensitive adhesive composition (I-4) are It can be obtained by mixing the above-mentioned pressure-sensitive adhesive and, if necessary, each component for constituting the pressure-sensitive adhesive composition, such as components other than the pressure-sensitive adhesive.
  • the order of addition of each component at the time of blending is not particularly limited, and two or more kinds of components may be added at the same time.
  • a solvent When a solvent is used, it may be used by mixing the solvent with any of the compounding ingredients other than the solvent and diluting this compounding ingredient in advance, or by diluting any of the compounding ingredients other than the solvent in advance. Alternatively, the solvent may be used as a mixture with these compounding ingredients.
  • the method of mixing each component at the time of blending is not particularly limited, and from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. It may be selected as appropriate.
  • the temperature and time at the time of adding and mixing each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30°C.
  • the intermediate layer is in the form of a sheet or a film and contains a resin.
  • the intermediate layer may be made of a resin or may contain a resin and a component other than the resin.
  • the intermediate layer can be formed, for example, by molding the resin or a composition for forming an intermediate layer containing the resin. Further, the intermediate layer can also be formed by applying the composition for forming an intermediate layer to the surface to be formed of the intermediate layer and drying it if necessary.
  • the resin that is a constituent material of the intermediate layer is not particularly limited.
  • the preferable resin in the intermediate layer include ethylene-vinyl acetate copolymer (EVA), polypropylene (PP), polyethylene (PE), polyurethane acrylate (UA), and the like.
  • the content of the resin in the intermediate layer forming composition is not particularly limited, and may be, for example, 80% by mass or more, 90% by mass or more, 95% by mass or more, and the like, but these are examples. Is.
  • the intermediate layer may be composed of one layer (single layer) or may be composed of two or more layers, and when composed of a plurality of layers, the plurality of layers may be the same or different from each other.
  • the combination of these plural layers is not particularly limited.
  • ⁇ Tensile modulus Ei'of test piece prepared from intermediate layer> For a test piece having a width of 15 mm and a length of more than 100 mm, which was manufactured from the intermediate layer (in the case of the die bonding sheet 101 shown in FIG. 1, the intermediate layer 13), the chuck distance was 100 mm, and the temperature was 0° C. Then, using Tensilon, a tensile test of pulling at a tensile speed of 200 mm/min is performed, and when the tensile elastic modulus Ei′ of the test piece at 0° C. in the elastic deformation region is measured, Ei′ is, for example, 10 to 150 MPa. It may be either 10 to 100 MPa or 10 to 50 MPa. When Ei' is in such a range, adjustment of the tensile elastic modulus ratio Ei'/Eb' described later becomes easier.
  • the tensile elastic modulus Ei′ of the test piece prepared from the intermediate layer is also defined as a value at 0° C. for the same reason as in the case of Eb′ described above.
  • the Ei'of the test piece may be the same or different between the two or more measurement directions.
  • the "two or more measurement directions of Ei'" are two or more different directions among the directions parallel to the first surface of the test piece (corresponding to the first surface of the intermediate layer).
  • the Ei'in the MD of the test piece and the Ei'in the TD of the test piece may be the same or different from each other.
  • the tensile elastic modulus Ei′ may be, for example, in any of the three numerical ranges illustrated above in any measurement direction of the test piece.
  • Ei' may be any one or both of MD and TD in any of the three numerical ranges exemplified above.
  • the combination of the numerical range of Ei'in MD and the numerical range of Ei'in TD is arbitrary.
  • the thickness of the test piece which is the measurement target of the tensile elastic modulus Ei′, is not particularly limited as long as it can perform these measurements with high accuracy.
  • the thickness of the test piece may be 10 to 200 ⁇ m.
  • the Ei' of the test piece prepared from the intermediate layer can be adjusted by adjusting the content and components of the intermediate layer, for example, the type and content of the resin.
  • Eb′ is preferably 0.5 or less, and may be, for example, 0.45 or less, 0.4 or less, or 0.35 or less.
  • both Eb'and Ei'depend on the measurement direction of the test piece to be measured in the case of Eb', the test piece of the base material, and in the case of Ei', the test piece of the intermediate layer).
  • Ei'and Eb'used for calculating the tensile modulus ratio Ei'/ Eb' those reflecting the arrangement direction of the base material and the intermediate layer in the die bonding sheet are adopted.
  • the test piece of the base material and the test piece of the intermediate layer both have MD and TD, and in the die bonding sheet, the MD of the base material and the MD of the intermediate layer coincide with each other.
  • the tensile modulus ratio Ei'/ Eb' is in one or both of these MDs and TDs.
  • It may be any one of the four numerical ranges exemplified above. In that case, the combination of the numerical range of Ei'/Eb' in MD and the numerical range of Ei'/Eb' in TD is arbitrary.
  • the lower limit of the tensile modulus ratio Ei'/ Eb' is not particularly limited as long as it is larger than 0.
  • the tensile modulus ratio Ei'/ Eb' is 0. from the viewpoint of being calculated from a combination of 200 MPa, which is an example of a preferable upper limit value of Eb', and 10 MPa, which is an example of a preferable lower limit value of Ei'. It may be 05 or more.
  • the tensile elastic modulus ratio Ei′/Eb′ can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned lower limit value and any upper limit value.
  • the tensile modulus ratio Ei'/Eb' is 0.05-0.5, 0.05-0.45, 0.05-0.4, and 0.05-0.35. It may be any of.
  • the test piece of the base material and the test piece of the intermediate layer both have MD and TD, and in the die bonding sheet, the MD of the base material and the MD of the intermediate layer coincide with each other.
  • the tensile modulus ratio Ei'/ Eb' is in one or both of these MDs and TDs.
  • It may be any one of the four numerical ranges exemplified here. In that case, the combination of the numerical range of Ei'/Eb' in MD and the numerical range of Ei'/Eb' in TD is arbitrary.
  • the maximum width of the intermediate layer is smaller than the maximum width of the adhesive layer and the maximum width of the base material.
  • the maximum value of the width of the intermediate layer can be appropriately selected in consideration of the size of the semiconductor wafer.
  • the maximum width of the intermediate layer may be 150-160 mm, 200-210 mm, or 300-310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm, a semiconductor wafer of 200 mm, or a semiconductor wafer having a width of 300 mm in a direction parallel to the bonding surface with the die bonding sheet.
  • the die bonding sheet is attached to the semiconductor wafer after dicing.
  • the “semiconductor wafer after dicing” is synonymous with the “semiconductor chip group” described later.
  • the “width of the intermediate layer” means, for example, “width in the direction parallel to the first surface of the intermediate layer”.
  • the maximum width of the intermediate layer is the diameter of the circle having a planar shape.
  • the “width of the semiconductor wafer” means the above-mentioned “width of the semiconductor wafer in a direction parallel to the surface of the die bonding sheet to which the semiconductor wafer is attached”.
  • the maximum width of the above-mentioned semiconductor wafer is the diameter of the circular shape.
  • the maximum width of the intermediate layer of 150 to 160 mm is equivalent to or larger than the maximum width of the semiconductor wafer of 150 mm within a range not exceeding 10 mm.
  • the maximum width of the intermediate layer of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm within a range not exceeding 10 mm.
  • the maximum width of the intermediate layer of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm within a range not exceeding 10 mm.
  • the difference between the maximum value of the width of the intermediate layer and the maximum value of the width of the semiconductor wafer is, for example, whether the maximum value of the width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm. Also, it may be 0 to 10 mm.
  • the thickness of the intermediate layer can be appropriately selected according to the purpose, but is preferably 20 to 150 ⁇ m, more preferably 50 to 120 ⁇ m.
  • the thickness of the intermediate layer is equal to or greater than the lower limit, the structure of the intermediate layer is more stabilized.
  • the thickness of the intermediate layer is equal to or less than the upper limit value, the cuttability of the film adhesive is further improved when the die bonding sheet is expanded.
  • the die bonding sheet after cutting the film adhesive is expanded (in other words, when the laminated sheet is expanded), the effect of keeping the kerf width sufficiently wide and highly uniform is further enhanced.
  • the "thickness of the intermediate layer” means the thickness of the entire intermediate layer, and for example, the thickness of the intermediate layer composed of a plurality of layers means the total thickness of all the layers constituting the intermediate layer. means.
  • the intermediate layer is preferably more flexible than the base material.
  • an intermediate layer in which Ei'is less than Eb'(Ei' ⁇ Eb') satisfies this condition and as a more preferable intermediate layer from this viewpoint, as described above, the tensile modulus ratio Ei
  • An example of the intermediate layer is that having'/Eb' of 0.5 or less.
  • the film-like adhesive preferably has curability and thermosetting property, and preferably has pressure-sensitive adhesive property.
  • the film-like adhesive having both thermosetting property and pressure-sensitive adhesive property can be attached by lightly pressing against various adherends in an uncured state. Further, the film adhesive may be one that can be attached to various adherends by heating and softening. When cured, the film adhesive finally becomes a cured product having high impact resistance, and this cured product can retain sufficient adhesive properties even under severe conditions of high temperature and high humidity.
  • the area of the film adhesive (that is, the area of the first surface) is close to the area of the semiconductor wafer before division so that the area of the base material (that is, It is preferable that the area is set smaller than the area of one surface) and the area of the pressure-sensitive adhesive layer (that is, the area of the first surface).
  • a region that is not in contact with the film-like adhesive is present on a part of the first surface of the pressure-sensitive adhesive layer. This makes it easier to expand the die-bonding sheet, and because the force applied to the film adhesive during expansion is not dispersed, the film adhesive can be cut more easily.
  • the film-like adhesive can be formed by using an adhesive composition containing the constituent material.
  • the film-shaped adhesive can be formed at a target site by applying the adhesive composition to the surface on which the film-shaped adhesive is to be formed and drying it as necessary.
  • the coating of the adhesive composition can be carried out in the same manner as in the case of coating the adhesive composition described above.
  • the drying conditions for the adhesive composition are not particularly limited.
  • the adhesive composition contains the solvent described below, it is preferably dried by heating, and in this case, for example, it is preferably dried at 70 to 130° C. for 10 seconds to 5 minutes.
  • the film adhesive may be composed of one layer (single layer) or may be composed of two or more layers, and when composed of a plurality of layers, the plurality of layers are the same as each other. However, they may be different, and the combination of these multiple layers is not particularly limited.
  • the maximum width of the film adhesive is smaller than the maximum width of the adhesive layer and the maximum width of the base material.
  • the maximum width of the film-like adhesive may be the same as the maximum width of the intermediate layer described above with respect to the size of the semiconductor wafer. That is, the maximum width of the film-like adhesive can be appropriately selected in consideration of the size of the semiconductor wafer.
  • the maximum width of the film-like adhesive may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150 mm, a semiconductor wafer of 200 mm, or a semiconductor wafer having a width of 300 mm in a direction parallel to the bonding surface with the die bonding sheet. There is.
  • the “width of the film adhesive” means, for example, “width of the film adhesive in a direction parallel to the first surface”.
  • the maximum width of the film adhesive described above is the diameter of the circle having the planar shape.
  • the “width of the film-like adhesive” is not the width of the film-like adhesive after cutting in the manufacturing process of the semiconductor chip with the film-like adhesive described later, but “before cutting (uncut Width of film-like adhesive (cut) "means.
  • the maximum width of the film-like adhesive of 150 to 160 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 150 mm within a range not exceeding 10 mm.
  • the maximum width of the film-like adhesive of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm within a range not exceeding 10 mm.
  • the maximum width of the film-like adhesive of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm within a range not exceeding 10 mm.
  • the difference between the maximum width of the film-like adhesive and the maximum width of the semiconductor wafer is, for example, when the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm. Even if there is, it may be 0 to 10 mm.
  • the maximum value of the width of the film adhesive satisfies such a condition, when the film adhesive is cut by the expansion of the die bonding sheet, scattering of the film adhesive after cutting, which will be described later, is undesired. The effect of suppressing the
  • both the maximum width of the intermediate layer and the maximum width of the film adhesive may be in any of the above numerical ranges. That is, as an example of the die bonding sheet of the present embodiment, the maximum value of the width of the intermediate layer and the maximum value of the width of the film-like adhesive are both 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. There is one.
  • the thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 ⁇ m, more preferably 2 to 20 ⁇ m, and particularly preferably 3 to 10 ⁇ m.
  • the thickness of the film-like adhesive is at least the above lower limit value, a higher adhesive force can be obtained with respect to the adherend (semiconductor chip).
  • the thickness of the film adhesive is equal to or less than the above upper limit, the cuttability of the film adhesive by expanding can be further improved, and the amount of cut pieces derived from the film adhesive can be further reduced.
  • the "thickness of the film-like adhesive” means the thickness of the entire film-like adhesive, and for example, the thickness of the film-like adhesive composed of a plurality of layers is all that constitute the film-like adhesive. Means the total thickness of the layers of. Next, the adhesive composition will be described.
  • Adhesive compositions include, for example, those containing a polymer component (a) and a thermosetting component (b). Hereinafter, each component will be described.
  • the adhesive composition shown below is an example of a preferable thing, and the adhesive composition in this embodiment is not limited to what is shown below.
  • the polymer component (a) is a component that can be regarded as being formed by a polymerization reaction of a polymerizable compound, and imparts film-forming property, flexibility, etc. to the film-like adhesive and is attached to an object to be bonded such as a semiconductor chip. It is a polymer compound for improving adhesiveness (in other words, adhesiveness). Further, the polymer component (a) is also a component that does not correspond to the epoxy resin (b1) and the thermosetting agent (b2) described later.
  • the polymer component (a) contained in the adhesive composition and the film-like adhesive may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. ..
  • polymer component (a) examples include acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin, and the like, and acrylic resin is preferable.
  • the ratio of the content of the polymer component (a) to the total content of all the components other than the solvent is preferably 20 to 75% by mass, more preferably 30 to 65% by mass.
  • thermosetting component (b) has thermosetting properties and is a component for thermosetting the film adhesive.
  • the thermosetting component (b) is composed of an epoxy resin (b1) and a thermosetting agent (b2).
  • the thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof may be arbitrarily selected. it can.
  • epoxy resin (b1) examples include known ones, and examples thereof include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, Bifunctional or higher functional epoxy compounds such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin and phenylene skeleton type epoxy resin can be mentioned.
  • an epoxy resin having an unsaturated hydrocarbon group may be used as the epoxy resin (b1).
  • An epoxy resin having an unsaturated hydrocarbon group has higher compatibility with an acrylic resin than an epoxy resin having no unsaturated hydrocarbon group. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using the film-like adhesive is improved.
  • the epoxy resin (b1) contained in the adhesive composition and the film adhesive may be only one kind, or may be two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof may be arbitrarily selected.
  • thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).
  • thermosetting agent (b2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, a group in which an acid group is anhydrate, and the like, and a phenolic hydroxyl group, an amino group, or an acid group is anhydrate.
  • a group is preferable, and a phenolic hydroxyl group or an amino group is more preferable.
  • thermosetting agents (b2) examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolac type phenol resins, dicyclopentadiene type phenol resins, aralkyl type phenol resins and the like. ..
  • examples of the amine-based curing agent having an amino group include dicyandiamide (DICY) and the like.
  • thermosetting agent (b2) may have an unsaturated hydrocarbon group.
  • thermosetting agent (b2) contained in the adhesive composition and the film-like adhesive may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. ..
  • the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass with respect to 100 parts by mass of the content of the epoxy resin (b1). It is more preferably 1 to 200 parts by mass, and may be, for example, 1 to 100 parts by mass, 1 to 50 parts by mass, or 1 to 25 parts by mass.
  • the content of the thermosetting agent (b2) is at least the lower limit value, the curing of the film-like adhesive becomes easier to proceed.
  • the content of the thermosetting agent (b2) is not more than the upper limit value, the moisture absorption rate of the film adhesive is reduced, and the reliability of the package obtained using the film adhesive is further improved. ..
  • the content of the thermosetting component (b) (that is, the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is the content of the polymer component (a).
  • the content is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, for example, 5 to 35 parts by mass. Parts, and 5 to 20 parts by mass.
  • the film-like adhesive in addition to the polymer component (a) and the thermosetting component (b), if necessary, other components not corresponding to these are contained. May be.
  • Preferred other components contained in the film adhesive are, for example, a curing accelerator (c), a filler (d), a coupling agent (e), a cross-linking agent (f), and an energy ray curable resin.
  • G photopolymerization initiator
  • i general-purpose additive
  • the curing accelerator (c) is a component for adjusting the curing rate of the adhesive composition.
  • Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole. , 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc.
  • An imidazole substituted with a group an organic phosphine such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphine in which one or more hydrogen atoms are substituted with an organic group); tetraphenylphosphonium tetraphenylborate, triphenylphosphine Examples thereof include tetraphenylboron salts such as tetraphenylborate.
  • the curing accelerator (c) contained in the adhesive composition and the film-like adhesive may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. ..
  • the content of the curing accelerator (c) is 0 with respect to 100 parts by mass of the thermosetting component (b). It is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass.
  • the content of the curing accelerator (c) is at least the lower limit value, the effect of using the curing accelerator (c) is more remarkable.
  • the content of the curing accelerator (c) is less than or equal to the upper limit value, for example, the highly polar curing accelerator (c) forms a film-like adhesive in the film-like adhesive under high temperature and high humidity conditions. The effect of suppressing segregation by moving to the bonding interface side is enhanced, and the reliability of the package obtained by using the film-like adhesive is further improved.
  • the film adhesive By containing the filler (d), the film adhesive further improves its cuttability by expanding. Further, since the film-like adhesive contains the filler (d), the coefficient of thermal expansion thereof can be easily adjusted, and this coefficient of thermal expansion can be optimized for the object to which the film-like adhesive is attached. , The reliability of the package obtained by using the film-like adhesive is further improved. In addition, by containing the filler (d) in the film adhesive, it is possible to reduce the moisture absorption rate of the film adhesive after curing and improve the heat dissipation.
  • the filler (d) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride and the like; spherical beads of these inorganic fillers; surface modification of these inorganic fillers. Goods; Single crystal fibers of these inorganic fillers; Glass fibers and the like.
  • the inorganic filler is preferably silica or alumina.
  • the filler (d) contained in the adhesive composition and the film adhesive may be only one kind, or two or more kinds, and when there are two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the ratio of the content of the filler (d) to the total mass) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and particularly preferably 20 to 60% by mass. preferable. When the ratio is in such a range, the effect of using the filler (d) can be obtained more remarkably.
  • the coupling agent (e) By containing the coupling agent (e) in the film-like adhesive, the adhesiveness and adhesion to the adherend are improved. Further, since the film adhesive contains the coupling agent (e), the cured product has improved water resistance without impairing heat resistance.
  • the coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.
  • the coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional groups of the polymer component (a), the thermosetting component (b) and the like, and is preferably a silane coupling agent. More preferred.
  • the coupling agent (e) contained in the adhesive composition and the film-like adhesive may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. ..
  • the content of the coupling agent (e) in the adhesive composition and the film adhesive is the total content of the polymer component (a) and the thermosetting component (b). It is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass with respect to 100 parts by mass.
  • the content of the coupling agent (e) is at least the lower limit value, the dispersibility of the filler (d) in the resin is improved, and the adhesiveness of the film adhesive with the adherend is improved. , The effect of using the coupling agent (e) is more remarkable.
  • the content of the coupling agent (e) is not more than the upper limit value, the generation of outgas is further suppressed.
  • Cross-linking agent (f) As the polymer component (a), one having a functional group such as a vinyl group capable of binding to another compound, a (meth) acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group, such as the above-mentioned acrylic resin, is used.
  • the adhesive composition and the film-like adhesive may contain a cross-linking agent (f).
  • the cross-linking agent (f) is a component for bonding the functional group in the polymer component (a) with another compound to cross-link, and by cross-linking in this way, the initial adhesive force of the film-like adhesive is obtained. And the cohesive force can be adjusted.
  • cross-linking agent (f) examples include an organic polyvalent isocyanate compound, an organic polyvalent imine compound, a metal chelate-based cross-linking agent (cross-linking agent having a metal chelate structure), an aziridine-based cross-linking agent (cross-linking agent having an aziridine group), and the like. Can be mentioned.
  • cross-linking agent (f) When an organic multivalent isocyanate compound is used as the cross-linking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a).
  • a cross-linking structure can be easily formed on the film adhesive by the reaction between the cross-linking agent (f) and the polymer component (a). Can be introduced in.
  • the cross-linking agent (f) contained in the adhesive composition and the film-like adhesive may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the cross-linking agent (f) in the adhesive composition is 0.01 to 20 parts by mass with respect to 100 parts by mass of the content of the polymer component (a). It is preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass.
  • the content of the cross-linking agent (f) is at least the lower limit value, the effect of using the cross-linking agent (f) is more remarkable.
  • the content of the cross-linking agent (f) is not more than the upper limit value, the excessive use of the cross-linking agent (f) is suppressed.
  • the energy ray-curable resin (g) is obtained by polymerizing (curing) an energy ray-curable compound.
  • the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferable.
  • the energy ray-curable resin (g) contained in the adhesive composition may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the ratio of the content of the energy ray-curable resin (g) to the total mass of the adhesive composition in the adhesive composition is 1 to 95% by mass. Is more preferable, 5 to 90% by mass is more preferable, and 10 to 85% by mass is particularly preferable.
  • Photopolymerization initiator (h) When the adhesive composition and the film-like adhesive contain the energy ray-curable resin (g), the photopolymerization initiator (h) is used in order to efficiently proceed with the polymerization reaction of the energy ray-curable resin (g). It may be contained.
  • Examples of the photopolymerization initiator (h) in the adhesive composition include benzoins such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, and benzoin dimethyl ketal.
  • benzoins such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, and benzoin dimethyl ketal.
  • acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethan-1-one; bis(2,4,6 -Trimethylbenzoyl) Acylphosphine oxide compounds such as phenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide; sulfide compounds such as benzylphenyl sulfide and tetramethylthium monosulfide; 1-hydroxycyclohexylphenylketone and the like.
  • ⁇ -Ketol compound examples include a photosensitizer such as amine.
  • the photopolymerization initiator (h) contained in the adhesive composition may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the photopolymerization initiator (h) in the adhesive composition is 0.1 with respect to 100 parts by mass of the content of the energy ray-curable resin (g).
  • the amount is preferably from 20 parts by mass, more preferably from 1 to 10 parts by mass, and particularly preferably from 2 to 5 parts by mass.
  • the general-purpose additive (I) may be a known one, and may be arbitrarily selected depending on the intended purpose, and is not particularly limited, but preferred ones are, for example, plasticizers, antistatic agents, antioxidants, and colorants (dye). , Pigments), gettering agents and the like.
  • the general-purpose additive (i) contained in the adhesive composition and the film adhesive may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected. ..
  • the contents of the adhesive composition and the film-like adhesive are not particularly limited and may be appropriately selected depending on the intended purpose.
  • the adhesive composition preferably further contains a solvent.
  • the adhesive composition containing a solvent has good handleability.
  • the solvent is not particularly limited, but preferred ones are, for example, hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol.
  • An ester such as ethyl acetate; a ketone such as acetone or methyl ethyl ketone; an ether such as tetrahydrofuran; an amide such as dimethylformamide or N-methylpyrrolidone (a compound having an amide bond).
  • the solvent contained in the adhesive composition may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the adhesive composition can be mixed more uniformly.
  • the content of the solvent in the adhesive composition is not particularly limited, and may be appropriately selected depending on the type of component other than the solvent, for example.
  • the adhesive composition is obtained by blending each component for constituting the adhesive composition.
  • the adhesive composition can be produced, for example, by the same method as in the case of the pressure-sensitive adhesive composition described above, except that the types of compounding components are different.
  • any of the layers can be an antistatic layer.
  • the preferred die bonding sheet includes, for example, the base material, and the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, and the die bonding sheet is formed.
  • the base material is provided with an antistatic layer (which may be abbreviated as “back surface antistatic layer” in the present specification) on the surface opposite to the pressure-sensitive adhesive layer side.
  • the sheet can be mentioned.
  • the base material is provided, and the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, and the base material is used.
  • the material include a die bonding sheet having an antistatic property (in the present specification, this base material may be abbreviated as "antistatic base material").
  • the base material is provided, and the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material, and antistatic.
  • the layer include a die bonding sheet provided with an antistatic layer (sometimes abbreviated as "surface antistatic layer” in the present specification) on a surface of the base material located on the pressure-sensitive adhesive layer side. Be done.
  • the antistatic layer (back surface antistatic layer, antistatic base material and surface antistatic layer) all contain an antistatic agent. Among these, a die bonding sheet provided with a back surface antistatic layer or an antistatic base material is preferable.
  • the surface resistivity of the die bonding sheet may be 1.0 ⁇ 10 11 ⁇ / ⁇ or less. As described below, when the surface resistivity is 1.0 ⁇ 10 11 ⁇ / ⁇ or less, the destruction of the circuit in the semiconductor chip is suppressed.
  • the die bonding sheet of the present invention is attached to the back surface of the semiconductor group to form a laminate composed of the die bonding sheet and the semiconductor group, and the surface of the laminate on the base material side is fixed on the dicing table.
  • the semiconductor wafer is divided, and the film adhesive is cut to obtain the substrate, the pressure-sensitive adhesive layer, the intermediate layer, the film adhesive after cutting, and the divided adhesive.
  • a laminate hereinafter, abbreviated as “divided laminate”) including the semiconductor wafers (that is, semiconductor chips) of the above is obtained in this order.
  • the fixed state of the divided laminated body on the dicing table is released, and the laminated body is transported onto the cleaning table and fixed on the table.
  • the laminated body fixed on the cleaning table is washed with water, and the cutting chips generated during dicing in the previous step are washed away and removed.
  • the cutting chips are derived from semiconductor wafers and film-like adhesives. Cleaning is usually performed while rotating the cleaning table.
  • the fixed state of the divided laminated body on the washing table after the washing is released, and the laminated body is conveyed to the drying table and fixed on the table.
  • the laminated body fixed on the drying table is dried to remove water attached during the washing in the previous step. Drying is usually carried out while rotating the drying table.
  • the dried laminated body is released from the fixed state on the drying table, and the laminated body is transported to the apparatus for performing the next step to perform the next step.
  • the semiconductor chip semiconductor chip with the film-like adhesive having the cut film-like adhesive on the back surface is pulled away from the intermediate layer and picked up.
  • the divided laminate is fixed on one of the tables, and after the work is performed, this fixed state is released and the laminated body is transported to the place where the next process is performed.
  • These laminates are fixed by adsorption on any table, for example, and after the adsorption is released, they are separated from the table and transported to the next location.
  • each of these tables has a void portion that penetrates in the thickness direction, and by depressurizing the side of the table opposite to the side in contact with the stacked body, the stacked body is placed on the table. Is adsorbed and fixed.
  • the laminate is kept fixed on a table, and then on the table.
  • the operation of pulling it away from the fixed surface is performed.
  • the surface resistivity of the outermost layer of the base material is 1.0 ⁇ 10 11 ⁇ / ⁇ or less, so that the laminated body is charged at the time of separation (in the present specification, “separation”. (Sometimes referred to as "time charging”) is suppressed. As a result, the destruction of the circuit in the semiconductor chip at the time of this separation is suppressed.
  • the surface resistivity of the die bonding sheet is the measurement target, using a surface resistivity meter, the applied voltage is 100V, Can be measured.
  • the backside antistatic layer is in the form of a sheet or film and contains an antistatic agent.
  • the back surface antistatic layer may contain a resin in addition to the antistatic agent.
  • the back surface antistatic layer may be composed of one layer (single layer) or may be composed of two or more layers, and when composed of a plurality of layers, these layers may be the same as each other. It may be different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the back surface antistatic layer is preferably 200 nm or less, more preferably 180 nm or less, and may be, for example, 100 nm or less.
  • the amount of the antistatic agent used can be reduced while maintaining sufficient antistatic ability. Therefore, the cost of the die bonding sheet provided with such a backside antistatic layer can be reduced. Can be reduced.
  • the thickness of the back surface antistatic layer is 100 nm or less, in addition to the above-mentioned effects, the effect that fluctuations in the characteristics of the die bonding sheet can be minimized due to the provision of the back surface antistatic layer. Can also be obtained. Examples of the characteristics include expandability.
  • the "thickness of the back antistatic layer” means the thickness of the entire back antistatic layer, and for example, the thickness of the back antistatic layer composed of a plurality of layers is all that constitutes the back antistatic layer. Means the total thickness of the layers.
  • the thickness of the back antistatic layer is preferably 10 nm or more, and may be, for example, 20 nm or more, 30 nm or more, 40 nm or more, and 65 nm or more.
  • the backside antistatic layer having a thickness equal to or more than the lower limit is easier to form and has a more stable structure.
  • the thickness of the back antistatic layer can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned preferable lower limit value and upper limit value.
  • the backside antistatic layer preferably has a thickness of 10 to 200 nm, for example, 20 nm to 200 nm, 30 to 200 nm, 40 to 180 nm, and 65 to 100 nm. Good. However, these are examples of the thickness of the backside antistatic layer.
  • the back surface antistatic layer may be transparent, opaque, or colored depending on the purpose.
  • the back surface antistatic layer preferably transmits energy rays.
  • the backside antistatic layer is preferably transparent.
  • the back surface antistatic layer can be formed using the antistatic composition (VI-1) containing the antistatic agent.
  • the back antistatic layer can be formed on a target portion by applying the antistatic composition (VI-1) to the surface to be formed of the back antistatic layer and drying it if necessary.
  • the content ratio of the components that do not vaporize at room temperature is usually the same as the content ratio of the components in the backside antistatic layer.
  • the antistatic composition (VI-1) may be coated by a known method, for example, the same method as in the case of the above-mentioned pressure-sensitive adhesive composition.
  • the antistatic composition (VI-1) is applied onto the base material and dried if necessary to prevent the back surface antistatic layer on the base material.
  • the layers may be laminated.
  • the antistatic composition (VI-1) is applied onto the release film, and dried if necessary to form a back surface on the release film. You may laminate
  • the drying conditions of the antistatic composition (VI-1) are not particularly limited, but when the antistatic composition (VI-1) contains the solvent described below, it is preferable to heat dry.
  • the antistatic composition (VI-1) containing the solvent is preferably dried at 40 to 130 ° C. for 10 seconds to 5 minutes, for example.
  • the antistatic composition (VI-1) may contain the resin in addition to the antistatic agent.
  • the antistatic agent may be a known one such as a conductive compound, and is not particularly limited.
  • the antistatic agent may be, for example, a low molecular compound or a high molecular compound (in other words, an oligomer or a polymer).
  • examples of low molecular weight compounds include various ionic liquids.
  • the ionic liquid include known ones such as pyrimidinium salt, pyridinium salt, piperidinium salt, pyrrolidinium salt, imidazolium salt, morpholinium salt, sulfonium salt, phosphonium salt, and ammonium salt.
  • examples of the polymer compound include poly (3,4-ethylenedioxythiophene) / polystyrene sulfonate (sometimes referred to as “PEDOT / PSS” in the present specification), polypyrrole, and the like. Examples include carbon nanotubes.
  • the polypyrrole is an oligomer or polymer having a plurality (many) pyrrole skeletons.
  • the antistatic agent contained in the antistatic composition (VI-1) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the ratio of the content of the antistatic agent to the total content of all components other than the solvent may be, for example, either 0.1 to 30% by mass and 0.5 to 15% by mass.
  • the ratio is at least the lower limit value, the effect of suppressing peeling charge of the die bonding sheet is enhanced, and as a result, the effect of suppressing foreign matter mixing between the film-like adhesive and the semiconductor wafer is enhanced.
  • the ratio is not more than the upper limit value, the strength of the back surface antistatic layer becomes higher.
  • the resin contained in the antistatic composition (VI-1) and the backside antistatic layer may be either curable or non-curable, and if curable, it may be energy ray curable or thermosetting. It may be either.
  • Examples of the preferable resin include those that function as a binder resin.
  • the resin include acrylic resins, and energy ray-curable acrylic resins are preferable.
  • the acrylic resin in the antistatic composition (VI-1) and the backside antistatic layer include the same acrylic resin in the pressure-sensitive adhesive layer.
  • the energy ray curable acrylic resin in the antistatic composition (VI-1) and the backside antistatic layer include the same as the adhesive resin (I-2a) in the adhesive layer.
  • the resin contained in the antistatic composition (VI-1) and the backside antistatic layer may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof are arbitrarily selected. it can.
  • the ratio of the content of the resin to the total content of all components other than the solvent (that is, the content of the resin in the back antistatic layer relative to the total mass of the back antistatic layer).
  • the content ratio may be, for example, any of 30 to 99.9% by mass, 35 to 98% by mass, 60 to 98% by mass, and 85 to 98% by mass.
  • the ratio is at least the lower limit value, the strength of the back surface antistatic layer becomes higher.
  • the ratio is not more than the upper limit value, the content of the antistatic agent in the antistatic layer can be further increased.
  • the antistatic composition (VI-1) may contain an energy ray-curable compound. Further, when the antistatic composition (VI-1) contains the energy ray-curable resin, it may contain a photopolymerization initiator in order to efficiently proceed the polymerization reaction of the resin.
  • the energy ray-curable compound and the photopolymerization initiator contained in the antistatic composition (VI-1) are, for example, the energy ray-curable compound and the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1), respectively. The same as the photopolymerization initiator can be used.
  • the energy ray-curable compound and the photopolymerization initiator contained in the antistatic composition (VI-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • the contents of the energy ray-curable compound and the photopolymerization initiator in the antistatic composition (VI-1) are not particularly limited, and depend on the type of the resin, the energy ray-curable compound or the photopolymerization initiator. It may be selected as appropriate.
  • the antistatic composition (VI-1) may contain other additives that do not fall under any of the above-mentioned components as long as the effects of the present invention are not impaired. Further, the antistatic composition (VI-1) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1) described above. As the other additive and solvent contained in the antistatic composition (VI-1), other additives (provided that the antistatic agent is contained in the above-mentioned pressure-sensitive adhesive composition (I-1) are included. And the same as the solvent. Furthermore, examples of the other additives contained in the antistatic composition (VI-1) include emulsifiers in addition to the above.
  • the solvent contained in the antistatic composition (VI-1) other alcohols such as ethanol; 2-methoxyethanol (ethylene glycol monomethyl ether) and 2-ethoxyethanol (ethylene glycol) other than the above. Monoethyl ether), alkoxy alcohols such as 1-methoxy-2-propanol (propylene glycol monomethyl ether) and the like can also be mentioned.
  • the other additives and solvent contained in the antistatic composition (VI-1) may each be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio are arbitrary. You can choose to.
  • the contents of the other additives and the solvent of the antistatic composition (VI-1) are not particularly limited, and may be appropriately selected depending on the type thereof.
  • the antistatic composition (VI-1) contains the antistatic agent and, if necessary, each component for constituting the antistatic composition (VI-1) such as a component other than the antistatic agent. You can get it.
  • the antistatic composition (VI-1) can be produced by the same method as in the case of the pressure-sensitive adhesive composition described above, except that the compounding components are different.
  • the antistatic base material is in the form of a sheet or a film, has antistatic properties, and also has the same function as the base material. In the die bonding sheet, the antistatic base material has the same function as the laminate of the base material described above and the back surface antistatic layer, and can be arranged in place of this laminate.
  • the antistatic base material may be the same as the base material described above except that it contains an antistatic agent and a resin, and for example, further contains an antistatic agent.
  • the antistatic base material may be composed of one layer (single layer), may be composed of two or more layers, and when composed of a plurality of layers, the plurality of layers are the same as each other. However, they may be different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the antistatic base material may be, for example, the same as the thickness of the base material described above.
  • the thickness of the antistatic base material is within such a range, the flexibility of the die bonding sheet and the adhesiveness to the semiconductor wafer or the semiconductor chip are further improved.
  • the "thickness of the antistatic base material” means the thickness of the entire antistatic base material, and for example, the thickness of the antistatic base material composed of a plurality of layers is the antistatic base material. It means the total thickness of all the layers that make up.
  • the antistatic base material may be transparent, opaque, or colored depending on the intended purpose.
  • the back surface antistatic layer preferably transmits energy rays.
  • the antistatic base material is preferably transparent.
  • the antistatic base material is subjected to sandblasting treatment, solvent treatment, or the like to improve the adhesiveness with a layer (for example, an adhesive layer, an intermediate layer, or a film-like adhesive) provided on the antistatic base material; corona.
  • the surface may be subjected to oxidation treatment such as discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromium acid treatment, hot air treatment, and the like. Further, the surface of the antistatic base material may be primed.
  • the antistatic base material can be produced, for example, by molding an antistatic composition (VI-2) containing the antistatic agent and a resin.
  • the ratio of the contents of the components that do not vaporize at room temperature in the antistatic composition (VI-2) is usually the same as the ratio of the contents of the components in the antistatic base material.
  • Molding of the antistatic composition (VI-2) may be carried out by a known method, and for example, it may be carried out by the same method as molding the resin composition at the time of producing the base material.
  • the antistatic agent contained in the antistatic composition (VI-2) may be the same as the antistatic agent contained in the backside antistatic layer.
  • the antistatic agent contained in the antistatic composition (VI-2) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the ratio of the content of the antistatic agent to the total content of the antistatic agent and the resin is 7.5% by mass or more. It is preferably 8.5% by mass or more, and more preferably 8.5% by mass or more.
  • the ratio is at least the lower limit value, the effect of suppressing peeling charge of the die bonding sheet is enhanced, and as a result, the effect of suppressing foreign matter mixing between the film-like adhesive and the semiconductor wafer is enhanced.
  • the upper limit of the ratio of the content of the antistatic agent to the total content of the antistatic agent and the resin is not particularly limited.
  • the ratio is preferably 20% by mass or less in terms of improving the compatibility of the antistatic agent.
  • the ratio of the content of the antistatic agent can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned preferable lower limit value and upper limit value.
  • the proportion is preferably 7.5 to 20% by mass, more preferably 8.5 to 20% by mass.
  • these are examples of the above ratio.
  • Examples of the resin contained in the antistatic composition (VI-2) and the antistatic base material include the same resins as those contained in the base material.
  • the resin contained in the antistatic composition (VI-2) and the antistatic base material may be only one kind, two or more kinds, and when two or more kinds, the combination and ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the resin to the total content of all components other than the solvent is The resin content ratio
  • the resin content ratio is preferably 30 to 99.9% by mass, more preferably 35 to 98% by mass, further preferably 60 to 98% by mass, and 85 to 98% by mass. It is particularly preferable that it is%.
  • the ratio is at least the lower limit value, the strength of the antistatic base material becomes higher.
  • the ratio is not more than the upper limit value, the content of the antistatic agent in the antistatic base material can be further increased.
  • the antistatic composition (VI-2) contains the energy ray-curable resin, it may contain a photopolymerization initiator in order to efficiently proceed the polymerization reaction of the resin.
  • the photopolymerization initiator contained in the antistatic composition (VI-2) include the same photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-1).
  • the photopolymerization initiator contained in the antistatic composition (VI-2) may be only one type, may be two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the content of the photopolymerization initiator in the antistatic composition (VI-2) is not particularly limited, and may be appropriately selected depending on the type of the resin or the photopolymerization initiator.
  • the antistatic composition (VI-2) is a filler, a colorant, an antioxidant, an organic lubricant, a catalyst, a softening agent, which does not fall under any of the above, other than the antistatic agent, the resin and the photopolymerization initiator. It may contain various known additives such as (plasticizer).
  • the additive contained in the antistatic composition (VI-2) is the same as the other additives (excluding the antistatic agent) contained in the pressure-sensitive adhesive composition (I-1) described above. Can be mentioned.
  • the antistatic composition (VI-2) may contain a solvent in order to improve its fluidity.
  • Examples of the solvent contained in the antistatic composition (VI-2) include the same solvents contained in the pressure-sensitive adhesive composition (I-1) described above.
  • the antistatic agent and the resin contained in the antistatic composition (VI-2) may each be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the contents of the additive and the solvent of the antistatic composition (VI-2) are not particularly limited, and may be appropriately selected depending on the type thereof.
  • the antistatic composition (VI-2) contains each component for forming the antistatic composition (VI-2), such as the antistatic agent, the resin, and components other than these, if necessary. It is obtained by doing.
  • the antistatic composition (VI-2) can be produced by the same method as in the case of the pressure-sensitive adhesive composition described above, except that the compounding components are different.
  • the surface antistatic layer has a different arrangement position on the die bonding sheet from the back surface antistatic layer, but its configuration itself is the same as that of the back surface antistatic layer.
  • the surface antistatic layer can be formed by the same method as the method for forming the back surface antistatic layer described above, using the antistatic composition (VI-1). Therefore, detailed description of the surface antistatic layer is omitted.
  • the surface antistatic layer and the back surface antistatic layer may be the same as each other or may be different from each other.
  • the die bonding sheet for example, a base material is provided, and an adhesive layer, an intermediate layer, and a film-like adhesive are laminated in this order on the base material, and the size is 4
  • a test piece of the base material having a size of .5 mm ⁇ 15 mm was prepared, and the temperature of the test piece was 23 ° C. using a thermomechanical analyzer, with a load of 2 g and without changing the temperature of the test piece.
  • the displacement amount X 0 at a certain time is measured, and the test piece after the displacement amount X 0 is measured is heated until the temperature reaches 70 ° C. at a temperature rising rate of 20 ° C./min and a load of 2 g.
  • the die bonding sheet for example, a base material is provided, and an adhesive layer, an intermediate layer, and a film-like adhesive are laminated in this order on the base material, and the size is 4
  • a test piece of the base material having a size of .5 mm ⁇ 15 mm was prepared, and the temperature of the test piece was 23 ° C. using a thermomechanical analyzer, with a load of 2 g and without changing the temperature of the test piece.
  • the displacement amount X 0 at a certain time is measured, and the test piece after the displacement amount X 0 is measured is heated until the temperature reaches 70 ° C. at a temperature rising rate of 20 ° C./min and a load of 2 g.
  • the die bonding sheet for example, a base material is provided, and an adhesive layer, an intermediate layer, and a film-like adhesive are laminated in this order on the base material, and the size is 4
  • a test piece of the base material having a size of .5 mm ⁇ 15 mm was prepared, and the temperature of the test piece was 23 ° C. using a thermomechanical analyzer, with a load of 2 g and without changing the temperature of the test piece.
  • the displacement amount X 0 at a certain time is measured, and the test piece after the displacement amount X 0 is measured is heated until the temperature reaches 70 ° C. at a temperature rising rate of 20 ° C./min and a load of 2 g.
  • the die bonding sheet for example, a base material is provided, and an adhesive layer, an intermediate layer, and a film-like adhesive are laminated in this order on the base material, and the size is 4
  • a test piece of the base material having a size of .5 mm ⁇ 15 mm was prepared, and the temperature of the test piece was 23 ° C. using a thermomechanical analyzer, with a load of 2 g and without changing the temperature of the test piece.
  • the displacement amount X 0 at a certain time is measured, and the test piece after the displacement amount X 0 is measured is heated until the temperature reaches 70 ° C. at a temperature rising rate of 20 ° C./min and a load of 2 g.
  • the die bonding sheet can be manufactured by laminating the above-mentioned layers so as to have a corresponding positional relationship.
  • the method of forming each layer is as described above.
  • a base material, a pressure-sensitive adhesive layer, an intermediate layer and a film adhesive are prepared in advance, respectively, and these are prepared in the order of the base material, the pressure-sensitive adhesive layer, the intermediate layer and the film adhesive. It can be manufactured by laminating and laminating so as to be. At this time, if necessary, the arrangement direction of the base material and the intermediate layer is adjusted so that the MD or TD of the base material and the intermediate layer is in the desired direction.
  • the die bonding sheet may be formed by preliminarily preparing two or more kinds of intermediate laminated bodies, which are configured by laminating a plurality of layers, and bonding the intermediate laminated bodies to each other. , Can be manufactured.
  • the configuration of the intermediate laminate can be arbitrarily selected. For example, a first intermediate laminate having a configuration in which a base material and a pressure-sensitive adhesive layer are laminated, and a second intermediate laminate having a configuration in which an intermediate layer and a film adhesive are laminated are prepared in advance, A die bonding sheet can be manufactured by laminating the pressure-sensitive adhesive layer in the first intermediate laminate and the intermediate layer in the second intermediate laminate.
  • this manufacturing method is an example.
  • the die bonding sheet may be produced, or the base material, the pressure-sensitive adhesive layer, the intermediate layer and the film-like adhesive are all laminated, and then the release film is laminated on the film-like adhesive to form the die-bonding sheet. You may make it.
  • the release film may be removed at a necessary stage by the time the die bonding sheet is used.
  • the die bonding sheet can be used at the time of manufacturing a semiconductor chip with a film adhesive in the process of manufacturing a semiconductor device.
  • a method of using the die bonding sheet (a method of manufacturing a semiconductor chip with a film-like adhesive) will be described in detail with reference to the drawings.
  • FIG. 3 is a cross-sectional view for schematically explaining a method for manufacturing a semiconductor chip to which a die bonding sheet is used.
  • FIG. 4 is a cross-sectional view for schematically explaining how to use the die bonding sheet.
  • the die bonding sheet 101 shown in FIG. 1 will be taken as an example, and a method of using the die bonding sheet 101 will be described.
  • a semiconductor wafer 9' is prepared, and a back grind tape (surface protection tape) 8 is attached to the circuit forming surface 9a'.
  • reference numeral W 9 ' the semiconductor wafer 9' indicates the width of the.
  • the modified layer 90' is inside the semiconductor wafer 9'as shown in FIG. 3B.
  • a laser beam not shown
  • the modified layer 90' is inside the semiconductor wafer 9'as shown in FIG. 3B.
  • the back surface 9b' of the semiconductor wafer 9' is ground.
  • the thickness of the semiconductor wafer 9' is adjusted to the desired value, and the force applied to the semiconductor wafer 9'at this time during grinding is used to make the modified layer 90'at the forming site.
  • the semiconductor wafer 9' is divided into a plurality of semiconductor chips 9 as shown in FIG. 3C.
  • reference numeral 9a indicates a circuit forming surface of the semiconductor chip 9, and corresponds to the circuit forming surface 9a'of the semiconductor wafer 9'.
  • reference numeral 9b indicates the back surface of the semiconductor chip 9, and corresponds to the back surface 9b'after grinding of the semiconductor wafer 9'.
  • the semiconductor chip 9 to be used for the die bonding sheet 101 is obtained. More specifically, by this step, a semiconductor chip group 901 in a state in which a plurality of semiconductor chips 9 are aligned and fixed on the back grind tape 8 is obtained.
  • a planar shape formed by connecting the outermost parts of the semiconductor chip group 901 (in the present specification, such a planar shape is simply referred to as "semiconductor”.
  • the planar shape of the chip group is exactly the same as the planar shape when the semiconductor wafer 9'is similarly viewed in a planar view, or the differences between these planar shapes are negligible. It can be said that the planar shape of the semiconductor chip group 901 is substantially the same as the planar shape of the semiconductor wafer 9'. Therefore, the width of the plane shape of the semiconductor chip group 901 can be regarded as the same as the width W 9 ′ of the semiconductor wafer 9 ′, as shown in FIG. 3C. Then, the maximum value of the width of the planar shape of the semiconductor chip group 901 can be regarded as the same as the maximum value of the width W 9 ′ of the semiconductor wafer 9 ′.
  • the semiconductor chip 9 can be formed as intended from the semiconductor wafer 9′ is shown. However, depending on the conditions at the time of grinding the back surface 9b′ of the semiconductor wafer 9′, a part of the semiconductor wafer 9′ may be formed. In this region, the semiconductor chip 9 may not be divided.
  • the semiconductor chip 9 (semiconductor chip group 901) obtained above is used to manufacture a semiconductor chip with a film-like adhesive.
  • the film-like adhesive 14 in the die bonding sheet 101 is applied to all the semiconductor chips in the semiconductor chip group 901. It is attached to the back surface 9b of 9.
  • the die bonding sheet 101 can be stably attached to the semiconductor chip 9 by the film-like adhesive 14 while heating.
  • the maximum value of the width W 13 of the intermediate layer 13 in the die bonding sheet 101 and the maximum value of the width W 14 of the film adhesive 14 are both the width W 9'of the semiconductor wafer 9' (in other words, the semiconductor chip It is exactly the same as or not the same as the maximum value of the group 901), but the error is slight and almost the same.
  • the maximum value of W 9 ′ is preferably 0.88 to 1.12 times the maximum value of W 13 and the maximum value of W 14 , and is 0.9 to 1.1. It is more preferably double, and particularly preferably 0.92 to 1.08 times. That is, the value of [maximum value of W 9' ] / [maximum value of W 13 ] and the value of [maximum value of W 9' ] / [maximum value of W 14 ] are both 0.88 to 1. It is preferably 0.12, more preferably 0.9 to 1.1, and particularly preferably 0.92 to 1.08.
  • the difference between the maximum value of W 13 and the maximum value of width W 9′ ([maximum value of W 13 ] ⁇ [maximum value of width W 9′ ]) is preferably 0 to 10 mm, and W 14
  • the difference between the maximum value of W 9'and the maximum value of W 9' ([maximum value of W 14 ]-[maximum value of width W 9' )) is preferably 0 to 10 mm.
  • the heating temperature at the time of sticking the die bonding sheet 101 is not particularly limited, but is preferably 40 to 70° C. from the viewpoint of further improving the heating sticking stability of the die bonding sheet 101.
  • the back grind tape 8 is removed from the fixed semiconductor chip group.
  • the die bonding sheet 101 is expanded while being cooled by stretching it in a direction parallel to its surface (for example, the first surface 12a of the pressure-sensitive adhesive layer 12).
  • the film adhesive 14 is cut along the outer periphery of the semiconductor chip 9.
  • a plurality of semiconductor chips 914 with a film-like adhesive provided with the semiconductor chip 9 and the film-like adhesive 140 after cutting provided on the back surface 9b thereof are aligned on the intermediate layer 13.
  • a semiconductor chip group 910 with a film-like adhesive in a fixed state is obtained.
  • the semiconductor wafer 9′ is divided, if the division into the semiconductor chips 9 is not performed in a partial region of the semiconductor wafer 9′, by performing this step, this region is divided. It is divided into semiconductor chips.
  • the die bonding sheet 101 is preferably expanded at a temperature of ⁇ 5 to 5 ° C. By cooling and expanding the die bonding sheet 101 in this way, the film-like adhesive 14 can be cut more easily and with high accuracy.
  • the expansion of the die bonding sheet 101 can be performed by a known method. For example, in the first surface 12a of the pressure-sensitive adhesive layer 12 in the die bonding sheet 101, a region near the peripheral portion where the intermediate layer 13 and the film adhesive 14 are not laminated is fixed to a jig such as a ring frame. After that, by pushing up the entire region of the die bonding sheet 101 on which the intermediate layer 13 and the film adhesive 14 are laminated from the base material 11 side in the direction from the base material 11 to the adhesive layer 12, the die bonding sheet 101 can be expanded.
  • a jig such as a ring frame
  • the non-laminated region where the intermediate layer 13 and the film adhesive 14 are not laminated is substantially parallel to the first surface 13 a of the intermediate layer 13.
  • the non-laminated region is opposite to the above-mentioned pushing direction as it approaches the outer periphery of the pressure-sensitive adhesive layer 12. Includes an inclined surface whose height descends in the direction.
  • the film-like adhesive after cutting A high effect of suppressing undesired scattering of 140 is obtained.
  • scattering of the film-like adhesive 140 after cutting for purposes other than the intended purpose means the peripheral edge of the film-like adhesive 140 after cutting, which was not originally attached to the semiconductor wafer 9'. This means a defect that a portion derived from a portion (in FIG. 4, such a peripheral portion is omitted) scatters and adheres to the circuit forming surface 9a of the semiconductor chip 9.
  • the laminated sheet of the base material 11, the pressure-sensitive adhesive layer 12, and the intermediate layer 13 derived from the die bonding sheet 101 is placed in a direction parallel to the first surface 12a of the pressure-sensitive adhesive layer 12.
  • the peripheral portion of the laminated sheet on which the semiconductor chip 914 with the film-like adhesive (semiconductor chip group 910 with the film-like adhesive) is not mounted is heated while expanding and maintaining this state.
  • an expanding direction of the laminated sheet by the arrow E 2.
  • the expanding direction of the laminated sheet is the same as the expanding direction of the die bonding sheet 101 described above.
  • the peripheral portion of the laminated sheet to be heated is indicated by an arrow H.
  • the peripheral edge portion to be heated is included in the non-laminated region.
  • the laminated sheet can be expanded in the same manner as in the case of the die bonding sheet 101 described above.
  • the intermediate layer 13 of the laminated sheet is laminated.
  • the laminated sheet can be expanded by pushing up the entire region from the base material 11 side in the direction from the base material 11 toward the pressure-sensitive adhesive layer 12.
  • a non-laminated region where the intermediate layer 13 and the film adhesive 14 are not laminated (a region including the peripheral portion indicated by the arrow H) is , Is substantially parallel to the first surface 13a of the intermediate layer 13, but as described above, in the state in which the laminated sheet is expanded by pushing up, the non-laminated region is the outer periphery of the pressure-sensitive adhesive layer 12.
  • the peripheral portion is contracted, and the distance between the adjacent semiconductor chips 9, that is, the calf width is sufficiently wide and highly uniform on the laminated sheet.
  • the kerf width after performing this step can be set to 10 ⁇ m or more, and all the kerf widths can be set to 10 ⁇ m or more.
  • the difference between the maximum value and the minimum value can be set to 100 ⁇ m or less. In this way, by keeping the kerf width sufficiently wide and highly uniform, the semiconductor chip with the film adhesive can be easily picked up, as will be described later.
  • the semiconductor chip group 910 with a film-like adhesive is preferably expanded at a low temperature, for example, -15 to 0 ° C.
  • a low temperature for example, -15 to 0 ° C.
  • the semiconductor chip 914 with the film-like adhesive is pulled away from the intermediate layer 13 in the laminated sheet and picked up. At this time, since the calf width is sufficiently wide and has high uniformity as described above, the semiconductor chip 914 with a film-like adhesive can be easily picked up.
  • the semiconductor chip 914 with a film-like adhesive can be picked up by a known method.
  • the die bonding sheet 101 shown in FIG. 1 has been taken as an example to explain how to use the die bonding sheet 101, but other die bonding sheets according to the present embodiment can also be used in the same manner. In that case, if necessary, other steps may be added and used as appropriate based on the difference in configuration between the die bonding sheet and the die bonding sheet 101.
  • a semiconductor chip with a film-like adhesive comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip.
  • the semiconductor wafer is divided at the formation site of the modified layer, and a plurality of semiconductor chips are formed.
  • the die-bonding sheet after being attached to the semiconductor chip group is stretched in a direction parallel to the surface of the die-bonding sheet while being cooled, thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip. It is derived from the step of obtaining a group of semiconductor chips with a film-like adhesive in a state in which the semiconductor chips with a film-like adhesive are aligned, and the die bonding sheet after obtaining the group of semiconductor chips with a film-like adhesive.
  • the base material, the pressure-sensitive adhesive layer, and the laminated sheet of the intermediate layer are expanded in a direction parallel to the surface of the pressure-sensitive adhesive layer, and while maintaining this state, the film-like adhesive among the laminated sheets.
  • the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer is 0 to 10 mm.
  • (A)-1 An acrylic resin (weight average molecular weight 800,000, glass transition temperature 9° C.) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).
  • Example 1 ⁇ Manufacturing of die bonding sheet >> ⁇ Manufacturing of base material> By melting low-density polyethylene (LDPE, Sumikasen L705 manufactured by Sumitomo Chemical Co., Ltd.) using an extruder, extruding the melt by the T-die method, and stretching the extruded product in two shafts using a cooling roll. A base material (thickness 110 ⁇ m) made of LDPE was obtained.
  • LDPE low-density polyethylene
  • An energy ray-curable pressure-sensitive adhesive composition was produced.
  • a release film in which one side of a polyethylene terephthalate film was peeled by a silicone treatment was used, and the pressure-sensitive adhesive composition obtained above was applied to the peeled surface and dried by heating at 100 ° C. for 2 minutes. By doing so, a non-energy ray curable pressure-sensitive adhesive layer (thickness 10 ⁇ m) was produced.
  • thermosetting adhesive composition 100 parts by mass
  • epoxy resin (b1)-1 10 parts by mass
  • thermosetting agent (b2)-1 1.5 parts by mass
  • filler (d)-1 75 parts by mass
  • a coupling agent (e)-1 0.5 parts by mass
  • a crosslinker (f)-1 0.5 parts by mass
  • a thermosetting adhesive composition 100 parts by mass
  • epoxy resin (b1)-1 10 parts by mass
  • thermosetting agent (b2)-1 1.5 parts by mass
  • filler (d)-1 75 parts by mass
  • a coupling agent (e)-1 0.5 parts by mass
  • a crosslinker (f)-1 0.5 parts by mass
  • the exposed surface of the adhesive layer was bonded to the exposed surface of the intermediate layer in the release film, the film-like adhesive, and the laminate of the intermediate layer (corresponding to the second intermediate laminate with the release film described above). ..
  • the arrangement direction of the base material and the intermediate layer is set so that the MD of the base material and the MD of the intermediate layer match (in other words, the TD of the base material and the TD of the intermediate layer match). Adjusted.
  • the base material thickness 110 ⁇ m
  • the pressure-sensitive adhesive layer thickness 10 ⁇ m
  • the intermediate layer thickness 80 ⁇ m
  • the film-like adhesive thickness 20 ⁇ m
  • the release film are formed in this order in these thickness directions.
  • a semiconductor wafer having a circular planar shape, a diameter of 300 mm, and a thickness of 775 ⁇ m was used, and a back grind tape (“Adwill E-3100TN” manufactured by Lintec Corporation) was attached to the circuit forming surface. Then, by using a laser light irradiation device (“DFL73161” manufactured by Disco Corporation), the modified layer is formed inside the semiconductor wafer by irradiating the laser light so as to focus on a focus set inside the semiconductor wafer. Formed. At this time, the focal point was set so that a large number of semiconductor chips having a size of 8 mm ⁇ 8 mm could be obtained from the semiconductor wafer.
  • DFL73161 manufactured by Disco Corporation
  • the laser beam was applied to the semiconductor wafer 9 from the back surface side of the semiconductor wafer.
  • the back surface of the semiconductor wafer is ground using a grinder to reduce the thickness of the semiconductor wafer to 30 ⁇ m, and the force applied to the semiconductor wafer at this time during grinding is used to obtain the modified layer.
  • the semiconductor wafer was divided to form a plurality of semiconductor chips. As a result, a semiconductor chip group was obtained in which a plurality of semiconductor chips were aligned and fixed on the back grinding tape.
  • the one die bonding sheet obtained above is heated to 60 ° C., and the film-like adhesive therein is applied to all the semiconductor chips. It was attached to the back surface of (semiconductor chip group).
  • the peripheral edge portion included in the non-laminated region is attached to the ring frame to provide a back grind tape on the circuit forming surface. A group of semiconductor chips having a die bonding sheet on the back surface was fixed.
  • the back grind tape was removed from the group of semiconductor chips in the fixed state.
  • the die bonding sheet is expanded in a direction parallel to its surface to form a film-like adhesive.
  • the agent was cut along the outer periphery of the semiconductor chip.
  • the peripheral edge of the die bonding sheet was fixed, and the entire region where the intermediate layer of the die bonding sheet and the film-like adhesive were laminated was pushed up by a height of 15 mm from the base material side to expand.
  • a plurality of semiconductor chips with a film-like adhesive provided with the semiconductor chip and the film-like adhesive after cutting provided on the back surface thereof are aligned and fixed on the intermediate layer.
  • a group of semiconductor chips with a film adhesive was obtained.
  • the laminated sheet constituted by laminating the base material, the adhesive layer and the intermediate layer at room temperature is parallel to the first surface of the adhesive layer. Expanded in the right direction. Further, while maintaining this expanded state, the peripheral portion of the laminated sheet on which the semiconductor chip with the film-like adhesive was not placed was heated. As a result, the calf width between adjacent semiconductor chips was maintained above a certain value on the laminated sheet while shrinking the peripheral edge portion.
  • thermomechanical analysis (TMA) according to the procedure shown below using a thermomechanical analyzer (“TMA4000SA” manufactured by Bruker AXS). That is, first, a test piece was prepared by cutting the base material into a size of 4.5 mm ⁇ 15 mm. Next, the test piece was placed in the thermomechanical analyzer, the load applied to the test piece was 2 g, and TMA was performed without changing the temperature of the test piece, so that the temperature of the test piece was 23 ° C. The displacement amount X 0 in MD at a certain time was measured.
  • the temperature rise rate is 20 ° C./min
  • the load is 2 g
  • the displacement amount X 0 is measured
  • the test piece is heated until the temperature reaches 70 ° C.
  • TMA is used until the temperature rise is completed.
  • the maximum value X 1 of the displacement amount in the MD of the test piece during this period was measured.
  • the test piece after measuring this displacement amount X 1 is allowed to cool under a temperature condition of 23 ° C., and TMA is performed until the end of this cooling, so that the MD of the test piece during this period is performed.
  • the minimum value X 2 of the displacement amount at was measured.
  • the obtained semiconductor chip group with the film-like adhesive was used from above on the side of the semiconductor chip by using a digital microscope (“VH-Z100” manufactured by KEYENCE CORPORATION). Observed. Then, by the expansion of the die bonding sheet, the cutting lines of the plurality of film adhesives extending to the MD of the intermediate layer, which should be formed when the film adhesive is normally cut, and the intermediate layer Check the number of cutting lines of the multiple film-like adhesives extending to the TD, the cutting lines that are not actually formed, and the cutting lines that are incompletely formed, and follow the evaluation criteria below. The cuttability of the film adhesive was evaluated.
  • the laminated sheet was expanded at room temperature, the peripheral edge of the laminated sheet was heated, and then the calf retention was evaluated by the following method. That is, when it is assumed that the film adhesive is normally cut by the expansion of the die bonding sheet, the film adhesive semiconductor chip group after the expansion includes a plurality of kerfs extending in the MD of the intermediate layer. The calfs are formed in a mesh shape by a plurality of calfs extending to the TD of the intermediate layer.
  • a central intersecting portion (corresponding to the present specification) corresponding to substantially the central portion of the silicon wafer before division is used. (Sometimes referred to as a "first intersection") and the central intersection (first intersection) in the TD of the intermediate layer, which is closest to the outer periphery of the silicon wafer before division.
  • the positions are located on the outer periphery of the silicon wafer before division, with two intersections at the same position (in this specification, they may be referred to as "second intersection” and "fourth intersection", respectively).
  • FIG. 5 shows the measurement points of the kerf width at this time.
  • reference numeral 7 represents a semiconductor chip
  • reference numeral 79a represents a kerf extending in the MD of the intermediate layer
  • reference numeral 79b represents a kerf extending in the TD of the intermediate layer.
  • the reference numerals W a1 , W a2 , W a3 , W a4, and W a5 all indicate the width of the calf extending to the MD of the intermediate layer (in other words, the calf width of the TD at the intersection), and the reference numerals W b1. , W b2 , W b3 , W b4 and W b5 all indicate the width of the calf extending to the TD of the intermediate layer (in other words, the calf width of the MD at the intersection).
  • the intersecting site for measuring the kerf widths W a1 and W b1 is the first intersecting site.
  • FIG. 5 is a plan view schematically showing a group of semiconductor chips with a film-like adhesive in order to explain a measurement point of the calf width, and here shows a case where the calf width is constant everywhere. However, this is just an example.
  • the kerf width may change depending on the position of the kerf, and the kerf at the same position in the film-like adhesive-attached semiconductor chip group may be changed for each of Examples and Comparative Examples. Even so, the calf width can change.
  • ⁇ Semiconductor chip with film adhesive, floating between intermediate layers> A group of semiconductor chips with a film-like adhesive obtained after the process of a fully automatic die separator (Disco "DDS2300") is visually observed from the base material side (non-semiconductor chip side), and the semiconductor with a film-like adhesive is observed. It was confirmed whether the chip floated from the intermediate layer. (Evaluation criteria) A: No floating of semiconductor chips with film-like adhesive B: Slight floating occurs in about several out of 100 semiconductor chips with film-like adhesive
  • Example 2 Manufacturing of die bonding sheet, manufacturing of semiconductor chip with film adhesive, evaluation of base material, evaluation of intermediate layer, and evaluation of die bonding sheet >> A die bonding sheet and a semiconductor chip with a film-like adhesive are manufactured by the same method as in Example 1 except that the diameter of the intermediate layer is 310 mm instead of 305 mm, and the base material, the intermediate layer, and the die bonding sheet are manufactured. Was evaluated. The results are shown in Table 1.
  • Example 3 Manufacturing of die bonding sheet, manufacturing of semiconductor chip with film adhesive, evaluation of base material, evaluation of intermediate layer, and evaluation of die bonding sheet >> A die bonding sheet and a semiconductor chip with a film-like adhesive are manufactured by the same method as in Example 1 except that the diameter of the intermediate layer is 320 mm instead of 305 mm, and the base material, the intermediate layer, and the die bonding sheet are manufactured. Was evaluated. The results are shown in Table 1.
  • Example 4 ⁇ Manufacturing of die bonding sheet >> ⁇ Manufacturing of base material>
  • the antistatic composition (as) -1 is applied to the surface of the base material obtained in Example 1 opposite to the pressure-sensitive adhesive layer side, and dried at 100 ° C. for 2 minutes.
  • AS1 back surface antistatic layer
  • the antistatic layer, the base material, and the like, except that the base material on which the back surface antistatic layer (AS1) obtained above was formed were used instead of the LDPE base material, A die bonding sheet with a release film was produced in which the pressure-sensitive adhesive layer, the intermediate layer, the film adhesive and the release film were laminated in this order in the thickness direction.
  • Example 5 ⁇ Manufacturing of base material> Instead of the antistatic composition (as) -1, the antistatic composition (as) -2 was used to produce a base material on which a back surface antistatic layer (AS2) having a thickness of 170 nm was formed. Using this base material, a die bonding sheet with a release film was produced in the same manner as in Example 4.
  • AS2 back surface antistatic layer
  • Ionic liquid composed of phosphonium salt was blended and stirred to obtain an energy ray-curable antistatic composition. At this time, the ratio of the content of the antistatic agent to the total content of the antistatic agent and the urethane acrylate resin in the antistatic composition was 9.0% by mass.
  • the antistatic composition obtained above was applied onto a polyethylene terephthalate process film (Toray Industries, Inc. "Lumirror T60 PET 50 T-60 Toure", thickness 50 ⁇ m) by the fountain die method to obtain a thickness.
  • An 80 ⁇ m coating film was formed.
  • using an ultraviolet irradiation device (“ECS-401GX” manufactured by Eye Graphics Co., Ltd.) and using a high-pressure mercury lamp (“H04-L41” manufactured by Eye Graphics Co., Ltd.) UV curing is performed to remove the antistatic agent and urethane acrylate resin.
  • the formed antistatic substrate was obtained.
  • a die bonding sheet with a release film was produced in the same manner as in Example 1 except that the antistatic substrate obtained above was used instead of the LDPE substrate.
  • a die bonding sheet and a semiconductor chip with a film-like adhesive were produced by the same method as in Example 1 except that the PP base material obtained above was used instead of the LDPE base material.
  • a die bonding sheet and a semiconductor chip with a film-like adhesive were produced in the same manner as in Example 1 except that the EVA base material obtained above was used instead of the LDPE base material.
  • Example 1 the total change rate of the displacement amount of the base material (test piece) was ⁇ 1.1% in MD and ⁇ 1.2% in TD. In Example 6, the total rate of change in the displacement of the base material (test piece) was ⁇ 1.0% in both MD and TD.
  • Example 1 the cutability of the film-like adhesive in the die bonding sheet was further good.
  • Eb' was 90 MPa in MD and 104 MPa in TD. Further, Ei'was 25 MPa in MD and 33 MPa in TD. As a result, Ei'/ Eb'was 0.28 in MD and 0.32 in TD.
  • Eb' was 100 MPa in MD and 100 MPa in TD. Further, Ei'was 25 MPa in MD and 33 MPa in TD. As a result, Ei'/ Eb'was 0.25 in MD and 0.33 in TD.
  • Example 1 the scattering inhibitory property of the film-like adhesive was further good, but in Example 3, the scattering inhibitory property of the film-like adhesive was further improved in Example 1. It was inferior to the cases of ⁇ 2, 4 ⁇ 6.
  • the difference between the diameter of the intermediate layer and the diameter of the semiconductor wafer was 10 mm or less (5 to 10 mm), but in Example 3, the difference was larger than 10 mm (20 mm). ).
  • Comparative Example 1 the heat-sticking suitability of the die bonding sheet was inferior.
  • the rate of change of the displacement amount of the base material (test piece) during heating was 2.9% in TD.
  • the total rate of change of the displacement amount of the base material (test piece) was 1.5% in TD.
  • Comparative Example 2 the cutability of the film-like adhesive in the die bonding sheet was also inferior.
  • Eb' was 25 MPa in MD and 33 MPa in TD.
  • Ei' was 25 MPa in MD and 33 MPa in TD.
  • Ei'/Eb' was 1.00 in both MD and TD.
  • the surface resistivity was 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the surface resistivity was 1. It was larger than 0 ⁇ 10 11 ⁇ / ⁇ .
  • the present invention can be used in the manufacture of semiconductor devices.

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