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  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0233—Mounting configuration of laser chips
  • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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  • H01S5/00—Semiconductor lasers
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  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
  • H01S5/0425—Electrodes, e.g. characterised by the structure
  • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation ; Circuits therefor
  • H01S5/0425—Electrodes, e.g. characterised by the structure
  • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
  • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
  • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
  • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
  • H01S5/2207—GaAsP based
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  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4018—Lasers electrically in series
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  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
  • H01S5/4031—Edge-emitting structures
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  • H01S2301/00—Functional characteristics
  • H01S2301/17—Semiconductor lasers comprising special layers
  • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
  • H01S5/0202—Cleaving
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  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
  • H01S5/0203—Etching
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  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0235—Method for mounting laser chips
  • H01S5/02355—Fixing laser chips on mounts
  • H01S5/0237—Fixing laser chips on mounts by soldering
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  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/024—Arrangements for thermal management
  • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
• • H—ELECTRICITY
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  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
  • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
  • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• • H—ELECTRICITY
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  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

• Patent Document 1 discloses a configuration in which respective light emitting element regions of a semiconductor laser array element are electrically connected in parallel. Therefore, current is injected in parallel to each light emitting element region of the semiconductor laser array element disclosed in Patent Document 1.
• Patent Document 1 Japanese Patent Laid-Open No. 11-220204
• the second light emitting element region has a second electrode film arranged on the other conductivity type semiconductor layer, and the first electrode film and the first electrode film are arranged.
• the second electrode film is electrically connected.
• FIG. 1 is a sectional view showing a semiconductor laser device according to the first embodiment.
• FIG. 2 is a cross-sectional view showing the semiconductor laser device according to the first embodiment.
• FIG. 10 is a cross-sectional view showing a semiconductor laser device according to a first modification of the third embodiment.
• FIG. 18 is a cross-sectional view showing how the semiconductor laser device is mounted on the submount by junction down in the semiconductor laser device according to the fifth embodiment.
• FIG. 22 is a sectional view showing a semiconductor laser device according to the seventh embodiment.
• FIG. 24 is a sectional view showing a semiconductor laser device according to the eighth embodiment.
• FIG. 26 is a table illustrating the composition of each component included in the semiconductor laser device according to the present disclosure.
• the present disclosure does not exclude a structure in which a door mold and a mold are reversed in the following embodiments.
• one of the gate type and the mold is referred to as one conductivity type, and the other is referred to as the other conductivity type.
• the n-type semiconductor layer 2 is a semiconductor layer formed by laminating it on the substrate 1.
• the type semiconductor layer 4 is a semiconductor layer formed by stacking on the active layer 3.
• the second electrode film 11 is a metal film formed in contact with the side electrode 7.
• the first electrode film 103 located in the first light-emitting element region 81 and the second electrode film 11 located in the second light-emitting element region 82 are the electrical electrodes. Connected to each other.
• the first electrode located in the first light-emitting element region 8 1 is The second electrode film 11 located in the second light emitting element region 82 is
• the second electrode film 11 provided on the type semiconductor layer 4 in the region 82 is the same continuous film.
• the n- type semiconductor layers 2 in the adjacent light emitting element regions 8 are electrically connected only via the first electrode film 10 and the second electrode film 11.
• an insulating film 5 in the first light emitting element region 8 1 and a second electrode film 1 1 in the second light emitting element region 8 2 are formed.
• the electrode film formed integrally is sequentially laminated.
• the insulating film 5 and the electrode film are formed in the first light emitting element region 81, the separation region 15 and the second light emitting element region 82. It is formed astride.
• the height of the protruding structure 18 from the layered surface of the substrate 1 is, for example, substantially the same as the height of the light emitting element region 8 from the layered surface of the substrate 1.
• the protruding structure 18 has a third electrode film 19 which is electrically connected to the insulating film 5 and the n- side electrode 6.
• the insulating film 5 formed on the surface of the protruding structure 18 is formed continuously with the insulating film 5 formed from the upper surface of the n- type semiconductor layer 2 in the second light emitting element region 8 2 to the isolation region 15.
• the side surface of the protruding structure 18 opposite to the second light emitting element region 82 is also covered.
• the third electrode film 19 disposed on the surface of the protruding structure 18 (in this embodiment, the surface opposite to the substrate 1) via the insulating film 5, and the second light-emitting element.
• the n- type semiconductor layer 213 in the region 82 is electrically connected.
• the third electrode film 19 and the first electrode film 10 located in the light emitting element region 8 adjacent to the protruding structure 18 are formed as one electrode film.
• the third electrode film 19 is integrally formed with the electrode film on the isolation region 15 and the first electrode film 10 located in the second light emitting element region 82.
• the stacked structure 500 is formed in the protruding structure 18 in the same manner as the light emitting element region 8 due to the manufacturing method described later.
• the protruding structure 18 may or may not have the laminated structure 500.
• the sub-mount 1 2 mounting surface 1 2 3, that has a plurality of metal films 1 3 is formed.
• Semiconductor laser - The element 1 hundred, it submount 1 second mounting surface 1 2 3 plurality of metal films 1 3 formed on the second electrode layer 1 1 and the third electrode film 1 9 It is mounted on the mounting surface 1 2 3 of the submount 1 2 in the junction down type so as to be connected via the bonding material 14.
• submount 1 second mounting surface 1 2 3, the metal film 1 3, the bonding material 1 4, are disposed.
• the metal film 13 is a gold wiring pattern arranged on the submount 12.
• a metal wire (not shown) for receiving the supply of electric power from the outside is connected to the bonding surfaces 12 of the metal films 1 3 3 and 1 3. Electric power is supplied to the semiconductor laser element 100 through the metal wire.
• the semiconductor laser device 200 includes the first light emitting element region 8 1 and the second light emitting element region 8 2 which are separately formed on the substrate 1.
• Semiconductor laser device: ⁇ indicates that the first light emitting element region 8 1 and the second light emitting element region 8 2 have the n-type semiconductor layer 2, the active layer 3 and the ⁇ type semiconductor layer 4 in this order. It has a laminated laminated body 500.
• the first light emitting element region 81 has the first electrode film 10 arranged on the n-type semiconductor layer 2.
• the second light emitting element region 82 has a second electrode film 11 arranged on the type semiconductor layer 4.
• First electrode film 108 and second electrode film 1 1 And are electrically connected. ⁇ 0 2020/174949 1 5
• the separation region indicates a region of the substrate and the laminated structure.
• the protruding structure 18 may be arranged adjacent to both ends of the plurality of light emitting element regions 8.
• the protruding structure 18 will be The metal film on the n- side electrode 6 of the second light emitting element region 8 2 and the submount 1 2 may be arranged if it is arranged adjacent to the region 8 2 only on the side opposite to the first light emitting element region 8 1.
• 1 3 can be electrically connected to each other, the size of the semiconductor laser device 100 can be reduced as compared with the case where the protruding structures 18 are arranged at both ends of the plurality of light emitting device regions 8. it can. As a result, the structure of the semiconductor laser device 100 can be simplified.
• the semiconductor laser device 200 has a plurality of metal films 13 (specifically, the metal film 13 (first metal film) and the metal film 130 (second metal).
• a submount 1 2 having a mounting surface 1 2 3 on which a film 2) is formed.
• the semiconductor laser device 100 for example, the first light emitting device region 81 and the second light emitting device region 82 are bonded to the metal film 13 and the metal film 130, respectively. That is, the semiconductor laser element 100 is junction-down mounted on the mounting surface 1 2 3 of the submount 1 2 and the second electrode film 1 1 3 is bonded to the metal film 1 3 s.
• the second electrode film 11 is also bonded to the metal film 130.
• the submount 12 has a plurality of light emitting element regions 8 including two light emitting element regions. Further, for example, the submount 12 has a plurality of metal films 1 including a metal film 13 and a metal film 130. ⁇ 02020/174949 19 ⁇ (: 171?2020/002231
• FIG. 3 is a sectional view showing a semiconductor laser device 10 1 according to Modification 1 of Embodiment 1. As shown in FIG. The semiconductor laser device according to the first modification of the first embodiment is different from the semiconductor laser device 200 according to the first embodiment only in the structure of the semiconductor laser element 100.
• FIG. 6 is a sectional view showing a semiconductor laser device 203 according to Modification 1 of Embodiment 2. As shown in FIG. 6
• FIG. 7 is a sectional view showing a semiconductor laser device 104 according to the third embodiment. ⁇ 02020/174949 25 box (: 171?2020/002231
• FIG. 8 is a sectional view showing a semiconductor laser device 204 according to the third embodiment.
• the semiconductor laser element 1 0 4 includes a semiconductor laser element 1 0 0 according to the first embodiment, different shapes of the type semiconductor layer 4 3.
• type semiconductor layer 4 3 comprises a projecting portion 1 7 projecting upward.
• the protrusion 17 protrudes toward the submount 12.
• the type semiconductor layer In the light emitting element region 80 two protrusions 17 are formed at both ends of the type semiconductor layer 43.
• two protruding portions 17 are formed so as to sandwich the ridge portion 16 when the semiconductor laser element 10 4 is viewed in a cross section in a direction orthogonal to the vertical axis direction.
• the two protruding portions 17 are formed so as to sandwich the ridge portion 16 in a top view.
• a space defined by the groove portion 9 is provided between the ridge portion 16 and the projecting portion 17. Therefore, when the semiconductor laser device 104 is mounted on the submount 12 by junction down, part of the bonding material 14 is moved to the space located between the ridge portion 16 and the protruding portion 17. .. This makes it difficult for the bonding material 14 to move toward the first electrode film 10 when the semiconductor laser device 104 is subjected to the junction down mounting on the submount 12. This makes it difficult for the bonding material 14 to come into contact with the first electrode film 10 when the semiconductor laser device 104 is mounted on the submount 12.
• the plurality of light emitting element regions 8 1 and 8 2 ds 8 3 included in 05 are collectively referred to as a light emitting element region 8.
• the second electrode film included in the semiconductor laser device 10 5 is included.
• a groove 9 caved toward the substrate 1 side will be formed.
• the second electrode film 1 16 is provided with the groove 9 recessed toward the substrate 1 side, and the recess is directly formed in the second electrode film 1 16 or A protrusion may be formed on the second electrode film 1 16 by thickening a part of the second electrode film 1 16.
• FIG. 11 is a sectional view showing a semiconductor laser device 106 according to Modification 2 of Embodiment 3.
• FIG. 12 is a sectional view showing a semiconductor laser device 206 according to Modification 2 of Embodiment 3. As shown in FIG.
• 0 6 has a plurality of light emitting element regions 8 1 8 2 6, 8 3 6 collectively sometimes referred to as light-emitting element region 8 6.
• the protrusion 17 is formed only on one side of the mold semiconductor layer 4.
• the protrusion 17 is arranged between the second electrode film 11 and the first electrode film 10.
• the projecting portion 17 is arranged between the n-side electrode 6 and the side electrode 7 in the light emitting element region 86 when viewed from above.
• the first light emitting element region 8 16 includes the door side electrode 6 arranged on the n-type semiconductor layer 2 and the side electrode 7 arranged on the mold type semiconductor layer 4. This ⁇ 02020/174949 28 ⁇ (: 171?2020/002231
• the protrusion 17 is arranged between the n-side electrode 6 and the side electrode 7.
• the second electrode film 1 16 is formed with the groove 9 recessed toward the substrate 1 side, so that the bonding material 14 is bonded to the semiconductor laser element 10 3
• the protrusion 17 is arranged between the second electrode film 11 and the first electrode film 10, so that the bonding material 14 can be bonded to the semiconductor laser device.
• the 106 is mounted on the submount 12, it becomes difficult to contact the first electrode film 10.
• FIG. 13 is a sectional view showing a semiconductor laser device 107 according to Modification 3 of Embodiment 3.
• FIG. 14 is a sectional view showing a semiconductor laser device 27 0 according to Modification 3 of Embodiment 3. As shown in FIG.
• a plurality of light emitting element regions 81, 82, and 83 provided in 07 may be collectively referred to as a light emitting element region 8ch.
• the protruding portion 1 7 3 is formed on only one side of the insulating film (second insulating film) 5 switch. Specifically, as in the second modification, in the first light emitting element region 81, the protruding portion 1773 is formed between the second electrode film 11 and the first electrode film 10. Will be placed. When said changing protrusions 1 7 3, when viewed from above, is arranged between the ⁇ electrode 6 and the negative electrode 7 which definitive to interference light emitting element region 8.
• the semiconductor laser device 208 according to the fourth embodiment is different from the semiconductor laser device 200 according to the first embodiment in that a metal formed on the mounting surface 1 2 3 of the submount 1 2.
• the structures of the membranes 3 3 3, 3 3 3 3 0, 3 3 are different.
• the metal films 33, 33, 33, and 33 are collectively referred to as the metal film 33 unless otherwise specified.
• the adhesion layer 20 is a layer for facilitating connection of the first barrier layer 21 to the submount 12.
• the adhesion layer 20 is, for example, a metal layer including a hinge.
• the second contact layer 24 is a layer for facilitating connection of the bonding material 14.
• the second contact layer 24 is, for example, a metal layer containing octa.
• One of the plurality of metal films 3 3 connected to the type semiconductor layer 4 of the first light emitting element region 8 1 has a second barrier layer 2 3 and a second barrier layer 2 3 having a width larger than that of the type semiconductor layer 4.
• the second barrier layer 23 and the second contact layer 24 having a width larger than the width of the contact layer 20, the first barrier layer 21 and the first contact layer 2 2 And,.
• the width here is the length in the X-axis direction, and the both ends are
• Both ends of the third and second contact layers 24 are arranged outside the both ends of the type semiconductor layer 4.
• the mounting surface 1 2 3 is formed on the n- type semiconductor layer 2 of the first light emitting element region 8 1.
• the recess 25 is formed at a position facing the electrode film 10 of FIG. Recess ⁇ 02020/174949 33 ((171?2020/002231
• the metal film 34 is formed on the side surface 25 forming the recess 25, so that the semiconductor laser device
• the metal film 34 may cover the bottom of the recess 25 as long as the metal films 34 are separated from each other and insulated.
• FIG. 20 is a sectional view showing a semiconductor laser device 110 according to the sixth embodiment.
• FIG. 21 is a sectional view showing a semiconductor laser device 210 according to the sixth embodiment.
• the current stop layer 27 is a semiconductor layer of a type stacked on the substrate 1.
• the n-type semiconductor layer 2 is laminated on the current stop layer 27.
• the current stop layer 27 is arranged between the n-type semiconductor layer 2 and the substrate 1 in the light emitting element region 89.
• the substrate 1 is a gate-type impurity (3 g or oxygen).
• the light emitting points 2 8 3 of the plurality of light emitting element regions 8 II are located at a position closer to the center than the center of the type semiconductor layer 40 in the width direction (X axis direction in the present embodiment) in each light emitting element region 8 II.
• the electrode film 1 is arranged on the side close to the electrode film 10.
• the light emitting point 2 8 3 of the first light emitting element region 8 1 II has the first electrode film 1 0 3 in the first light emitting element region 8 1 II more than the center of the type semiconductor layer 4 3 in the width direction. It is located on the side closer to 3.
• the difference from the semiconductor laser device 200 according to the first embodiment will be mainly described.
• the same components as those of the semiconductor laser device 200 according to the first embodiment will be denoted by the same reference numerals and the description thereof may be omitted.
• the thickness of the electrode film 10 arranged between the insulating film 5 and the insulating film 5 3 is 3 (on the film shown in FIG. 30) on the gate-side electrode 6 on the light emitting element region 8 1 side.
• Thickness 1 on the side surface of the separation groove 600 3 2 .3 4 (thickness 1 shown in Fig. 30), and on the bottom surface of the separation groove 6 0 3 2 3 7 (Thickness 0 1 shown in Fig.
• the film thickness of the electrode film 10 on the side surface of the separation groove 60 03 and the film thickness of the electrode film 10 on the bottom surface of the separation groove 60 3 ⁇ 3 1 are respectively on the n-side electrode 6.
• the film thickness of the electrode film 10 is 78% and 79% of 81.
• 1 1 1 4 includes a plurality of light emitting element regions 8 1 1 ⁇ , 8 2 1 ⁇ , 8 3 1 ⁇ .
• the plurality of light emitting element regions 8 1 1 ⁇ , 8 2 1 ⁇ , and 8 3 are respectively the light emitting element region 8 included in the semiconductor laser device 100 according to the first embodiment and the first electrode film 10 No. 2 ⁇ 02020/174949 52 ⁇ (: 171?2020/002231
• Metal film (metal film pattern)

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• 2020
  • 2020-01-23 JP JP2021501740A patent/JP7535992B2/ja active Active
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