WO2020138970A3 - 기판처리장치 - Google Patents

기판처리장치 Download PDF

Info

Publication number
WO2020138970A3
WO2020138970A3 PCT/KR2019/018512 KR2019018512W WO2020138970A3 WO 2020138970 A3 WO2020138970 A3 WO 2020138970A3 KR 2019018512 W KR2019018512 W KR 2019018512W WO 2020138970 A3 WO2020138970 A3 WO 2020138970A3
Authority
WO
WIPO (PCT)
Prior art keywords
treatment
injection
unit
region
lead
Prior art date
Application number
PCT/KR2019/018512
Other languages
English (en)
French (fr)
Other versions
WO2020138970A2 (ko
Inventor
오동혁
권수영
김종식
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to CN201980083084.0A priority Critical patent/CN113228245A/zh
Priority to US17/417,752 priority patent/US20220074049A1/en
Priority to JP2021537190A priority patent/JP2022515461A/ja
Publication of WO2020138970A2 publication Critical patent/WO2020138970A2/ko
Publication of WO2020138970A3 publication Critical patent/WO2020138970A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 기판에 대한 처리공정이 이루어지는 챔버; 상기 챔버에 결합되고, 기판을 지지하는 지지부; 상기 지지부의 상측에 배치되도록 상기 챔버에 결합된 리드; 상기 리드에 결합되고, 상기 리드와 상기 지지부 사이의 처리공간을 복수개의 처리영역으로 구획하기 위해 상기 처리공간으로 퍼지가스를 분사하는 퍼지가스분사부; 상기 리드와 상기 지지부의 사이에 배치되도록 상기 리드에 결합된 쉴드; 상기 처리영역들 중에서 제1처리영역에 제1가스를 분사하는 제1분사부; 상기 제1분사부로부터 이격된 위치에서 상기 제1처리영역에 상기 제1가스를 분사하는 제2분사부; 및 상기 제1분사부의 하측에 배치된 제1분사영역, 상기 제2분사부의 하측에 배치된 제2분사영역, 및 상기 제1분사영역과 상기 제2분사영역 사이의 제1이격공간을 상기 제1가스를 이용한 처리공정이 이루어지는 영역이 되도록 상기 쉴드에 결합된 제1격벽부를 포함하는 기판처리장치에 관한 것이다.
PCT/KR2019/018512 2018-12-26 2019-12-26 기판처리장치 WO2020138970A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201980083084.0A CN113228245A (zh) 2018-12-26 2019-12-26 基板处理设备
US17/417,752 US20220074049A1 (en) 2018-12-26 2019-12-26 Substrate treatment apparatus
JP2021537190A JP2022515461A (ja) 2018-12-26 2019-12-26 基板処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0169104 2018-12-26
KR1020180169104A KR20200079696A (ko) 2018-12-26 2018-12-26 기판처리장치

Publications (2)

Publication Number Publication Date
WO2020138970A2 WO2020138970A2 (ko) 2020-07-02
WO2020138970A3 true WO2020138970A3 (ko) 2020-08-20

Family

ID=71126641

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2019/018512 WO2020138970A2 (ko) 2018-12-26 2019-12-26 기판처리장치

Country Status (6)

Country Link
US (1) US20220074049A1 (ko)
JP (1) JP2022515461A (ko)
KR (1) KR20200079696A (ko)
CN (1) CN113228245A (ko)
TW (1) TWI839431B (ko)
WO (1) WO2020138970A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155281B1 (ko) * 2017-07-28 2020-09-11 주성엔지니어링(주) 기판처리장치의 가스분사장치, 기판처리장치, 및 기판처리방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007247066A (ja) * 2006-03-15 2007-09-27 Asm Japan Kk 回転サセプタを備える半導体処理装置
KR101562396B1 (ko) * 2008-08-29 2015-10-21 도쿄엘렉트론가부시키가이샤 성막 장치 및 기판 처리 장치
JP2016042561A (ja) * 2014-08-19 2016-03-31 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR20170028744A (ko) * 2015-09-04 2017-03-14 주성엔지니어링(주) 기판 처리 장치
KR20180013034A (ko) * 2016-07-28 2018-02-07 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008114958A1 (en) * 2007-03-16 2008-09-25 Sosul Co., Ltd. Apparatus for plasma processing and method for plasma processing
JP5262452B2 (ja) * 2008-08-29 2013-08-14 東京エレクトロン株式会社 成膜装置及び基板処理装置
JP5253932B2 (ja) * 2008-09-04 2013-07-31 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
CN102239543A (zh) * 2009-03-03 2011-11-09 周星工程股份有限公司 气体分配装置及具有其的基板处理装置
JP5572515B2 (ja) * 2010-10-15 2014-08-13 東京エレクトロン株式会社 成膜装置および成膜方法
KR102002042B1 (ko) * 2012-05-29 2019-07-19 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR102070400B1 (ko) * 2012-06-29 2020-01-28 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6412466B2 (ja) * 2015-06-02 2018-10-24 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR101957368B1 (ko) * 2016-06-09 2019-03-14 주성엔지니어링(주) 기판 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007247066A (ja) * 2006-03-15 2007-09-27 Asm Japan Kk 回転サセプタを備える半導体処理装置
KR101562396B1 (ko) * 2008-08-29 2015-10-21 도쿄엘렉트론가부시키가이샤 성막 장치 및 기판 처리 장치
JP2016042561A (ja) * 2014-08-19 2016-03-31 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR20170028744A (ko) * 2015-09-04 2017-03-14 주성엔지니어링(주) 기판 처리 장치
KR20180013034A (ko) * 2016-07-28 2018-02-07 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법

Also Published As

Publication number Publication date
TWI839431B (zh) 2024-04-21
WO2020138970A2 (ko) 2020-07-02
TW202040648A (zh) 2020-11-01
CN113228245A (zh) 2021-08-06
JP2022515461A (ja) 2022-02-18
KR20200079696A (ko) 2020-07-06
US20220074049A1 (en) 2022-03-10

Similar Documents

Publication Publication Date Title
WO2012099681A3 (en) Semiconductor processing system and methods using capacitively coupled plasma
WO2012176996A3 (ko) 반도체 제조에 사용되는 분사부재 및 그것을 갖는 기판 처리 장치
WO2012036499A3 (ko) 박막 증착 장치
WO2011025214A3 (ko) 가스분사장치 및 이를 이용한 기판처리장치
TW200621095A (en) Plasma processing system for treating a substrate
TW200734480A (en) Apparatus and process for plasma-enhanced atomic layer deposition
WO2011029096A3 (en) Plasma enhanced chemical vapor deposition apparatus
TW200710955A (en) Vapor phase growing apparatus and vapor phase growing method
GB201121034D0 (en) Apparatus and method for depositing a layer onto a substrate
WO2012087737A3 (en) Variable-density plasma processing of semiconductor substrates
JP2012124168A5 (ko)
TW201130071A (en) Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
TW201614727A (en) Method of depositing insulation layer on deep trench having high aspect ratio
RU2013149047A (ru) Устройство и способ комбинаторного распределения газа через многозональную головную часть, выполненную наподобие разбрызгивающей насадки для душевой лейки
TW201612355A (en) Film deposition apparatus
WO2020138970A3 (ko) 기판처리장치
SG10201901906YA (en) Atmospheric epitaxial deposition chamber
WO2016072850A3 (en) Atomic layer deposition apparatus and method for processing substrates using an apparatus
MY197365A (en) Apparatus and method for the plasma treatment of wafers
CA3047905C (en) Plasma corridor for high volume pe-cvd processing
MX2019001999A (es) Proceso para la preparacion de microparticulas que contienen acetato de glatiramer.
WO2012097024A3 (en) Pvd process with synchronized process parameters and magnet position
ZA202103975B (en) Methods of treating disease with magl inhibitors
WO2009085808A3 (en) Apparatus and method for processing a substrate using inductively coupled plasma technology
MX2021008865A (es) Inhibidores de magl para usarse para tratar enfermedades antecedentes.

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19905856

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2021537190

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19905856

Country of ref document: EP

Kind code of ref document: A2