WO2020134651A1 - 波导芯层、模斑转换器、硅光器件及光通信设备 - Google Patents

波导芯层、模斑转换器、硅光器件及光通信设备 Download PDF

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Publication number
WO2020134651A1
WO2020134651A1 PCT/CN2019/117146 CN2019117146W WO2020134651A1 WO 2020134651 A1 WO2020134651 A1 WO 2020134651A1 CN 2019117146 W CN2019117146 W CN 2019117146W WO 2020134651 A1 WO2020134651 A1 WO 2020134651A1
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Prior art keywords
waveguide
waveguide region
region
core layer
solid
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PCT/CN2019/117146
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English (en)
French (fr)
Inventor
王谦
吴文鹏
曾金林
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华为技术有限公司
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Publication of WO2020134651A1 publication Critical patent/WO2020134651A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler

Definitions

  • the present application relates to the technical field of optical communication, and in particular to a waveguide core layer, a mode spot converter, a silicon optical device, and an optical communication device.
  • the optical fiber is erected in a V-shaped groove, so that the center of the optical fiber can directly face the interface of the silicon optical chip, and then a small mode spot with a high refractive index difference is fused at the end of the optical fiber Optical fiber, and then connect the small mode spot fiber to the silicon optical chip, and realize the transition between the mode spot of the silicon optical chip and the fiber mode spot through the small mode spot fiber.
  • the fusion splicing process is complicated and the cost is high.
  • the small-mode spot fiber after fusion needs to be set up in the V-groove, because the structural tolerance of the V-groove is directly The position of the core diameter of the small mode spot fiber is affected, so that there is optical loss and poor channel uniformity after the small mode spot fiber is connected with the silicon optical chip.
  • the embodiments of the present application provide a waveguide core layer, a mold spot converter, a silicon optical device, and an optical communication device, to solve the current method of welding small mode spot fibers with high cost and large optical loss and poor channel uniformity after docking with a silicon optical chip The problem.
  • An embodiment of the present application provides a waveguide core layer, including: a first waveguide region and a second waveguide region connected in sequence along a first direction; and both the first waveguide region and the second waveguide region are along the first Direction extending; the end of the first waveguide region facing away from the second waveguide region is used to connect with the silicon optical chip, and the end of the second waveguide region facing away from the first waveguide region is used to connect to the optical fiber; the first The dimension of a waveguide region along the second direction increases from the end facing away from the second waveguide region toward the end near the second waveguide region; the refractive index of the second waveguide region increases from that close to the first waveguide region One end decreases toward the end away from the first waveguide region; wherein, the second direction is perpendicular to the first direction, which can realize the precise docking of the waveguide core layer and the silicon optical chip, reducing the optical loss during communication, The channel uniformity of silicon optical devices and optical communication equipment is improved; in addition, since the waveguide core layer does not need to
  • the waveguide core layer as described above, wherein an end of the first waveguide region near the second waveguide region has a first cross section; an end of the second waveguide region near the first waveguide region has a second cross section;
  • the first cross-section is parallel to the second cross-section, and the first cross-section is perpendicular to the first direction; the projection of the first cross-section along the first direction on the second cross-section is The second cross-section coincides so that the first cross-section and the second cross-section are completely butted, reducing the loss of light when entering the second waveguide area from the first waveguide area.
  • the waveguide core layer as described above, wherein the arbitrary dimensions of the second waveguide region along the second direction are equal, thereby facilitating processing and reducing manufacturing costs.
  • the second waveguide region includes: a first solid waveguide portion extending from one end to the other end of the second waveguide region in the first direction; the first solid waveguide The end near the first waveguide region has the second cross section; the refractive index of the first solid waveguide portion decreases from the end near the first waveguide region toward the end away from the first waveguide region,
  • the mode spot after passing through the core layer of the waveguide can be matched with the mode spot of the optical fiber to realize communication, and the channel uniformity is good.
  • the second waveguide region includes a plurality of second solid waveguide portions spaced along the first direction, and the plurality of second solid waveguide portions are close to the first waveguide
  • One of the second solid waveguide portions of the region has the second cross section, and the second cross section is located at an end of the second solid waveguide portion close to the first waveguide region so that the mode spot after passing through the waveguide core layer It can be matched with the mold spot of the optical fiber to achieve communication, and the channel uniformity is good.
  • the waveguide core layer as described above, wherein the distance between two adjacent second solid waveguide portions increases from the end close to the first waveguide region toward the end away from the first waveguide region The effect is good, and the length dimension of the second waveguide region along the first direction can be reduced.
  • the second sub-waveguide area includes a plurality of second solid sub-waveguide portions spaced apart along the first direction, and when light passes through the second sub-waveguide area, its mode spot can not only be further expanded in the second direction At the same time, the mode spot also expands in the third direction. Therefore, the size of the mode spot that needs to be expanded after the light passes through the second waveguide region becomes smaller, which can shorten the length of the second waveguide region along the first direction, thereby reducing the entire waveguide The size of the core layer.
  • the waveguide core layer as described above, wherein the distance between adjacent two of the second solid sub-waveguide portions is from an end near the first solid sub-waveguide portion to an end facing away from the first solid sub-waveguide portion Increased, good speckle expansion effect, and can further reduce the length dimension of the second waveguide region along the first direction.
  • the plane in the extending direction of the waveguide area is a cross section, and the shape of the cross section at any position of the third waveguide area is the same.
  • the light in the third waveguide area can be changed from an unstable state to a stable state, ensuring the stability of signal transmission Sex.
  • the extending direction of the third waveguide region is a curved direction, which can accurately realize the docking of multiple interfaces of the optical fiber array and the silicon optical chip.
  • An embodiment of the present application provides a mold spot converter, including: a substrate layer, a cover layer, and the waveguide core layer; the waveguide core layer and the cover layer are disposed on the substrate layer, and the cover layer Wrapping the waveguide core layer can protect and support the waveguide core layer, facilitate installation, and improve the channel uniformity of the mode spot converter.
  • the mode spot converter as described above wherein the number of the waveguide core layers is plural, and the plurality of waveguide core layers are arranged on the substrate layer at intervals along the second direction, so that the optical fiber array and Docking of silicon optical chips.
  • An embodiment of the present application provides a silicon optical device, including a silicon optical chip, an optical fiber, and the mold spot converter; the mold spot converter is connected between the silicon optical chip and the optical fiber, and can realize optical communication And the channel uniformity is good.
  • the silicon optical chip includes a substrate and a silicon optical chip body provided on the substrate, and the silicon optical chip body is connected to the waveguide core layer of the mode converter , So that the silicon optical chip body can be formed on the substrate, thereby facilitating manufacturing.
  • the silicon optical device as described above, wherein the silicon optical device further includes a cover plate, the cover plate includes a first connection surface and a second connection surface connected to the first connection surface, the first connection surface Perpendicular to the second connection surface, and the first connection surface is fixedly connected to the end surface of the substrate layer along the first direction, and the second connection surface and the silicon optical chip body face away from the substrate
  • the top surface is fixedly connected, and the substrate layer does not need to abut the process bumps, so that the waveguide core layer can be seamlessly connected to the silicon optical chip body, reducing the loss of optical transmission.
  • the substrate layer and the cover plate are formed as an integral piece, thereby reducing processing and installation steps, and improving the assembly efficiency of the silicon optical device.
  • An embodiment of the present application provides an optical communication device, including a communication device and the silicon optical device.
  • the silicon optical device is in communication connection with the communication device, can realize optical communication, and has good channel uniformity.
  • the first waveguide region and the second waveguide region connected in the first direction in sequence are provided on the waveguide core layer; and the first waveguide The area and the second waveguide area both extend in the first direction; the end of the first waveguide area facing away from the second waveguide area is used to connect with the silicon optical chip, and the end of the second waveguide area facing away from the first waveguide area is used to connect to the optical fiber;
  • the dimension of a waveguide area along the second direction increases from the end facing away from the second waveguide area toward the end close to the second waveguide area; the refractive index of the second waveguide area goes away from the end near the first waveguide area toward the end away from the first waveguide area One end is reduced, so that the light passing through the first waveguide area and the second waveguide area can be transformed from a small mode spot to a large mode spot matched with the optical fiber, and the first waveguide area and the second waveguide area are respectively
  • FIG. 1 is a connection schematic diagram of Embodiment 1 of a waveguide core layer of this application;
  • FIG. 2 is a schematic diagram of the overall structure of the waveguide core layer in FIG. 1;
  • FIG. 3 is a schematic diagram of the overall structure of the second embodiment of the waveguide core layer of the present application.
  • FIG. 4 is a schematic view of the overall structure of the third embodiment of the waveguide core layer of this application.
  • FIG. 5 is a schematic diagram of the overall structure of the fourth embodiment of the waveguide core layer of the present application.
  • FIG. 6 is another schematic structural view of the third waveguide region in FIG. 5;
  • FIG. 8 is a schematic diagram of the overall structure of the first embodiment of the silicon optical device of the present application.
  • FIG. 9 is a schematic diagram of the overall structure of a second embodiment of a silicon optical device of the present application.
  • 100 waveguide core layer; 110: the first waveguide area;
  • Second solid sub-waveguide department 120: Second waveguide area
  • 121 the second section; the first section of the solid waveguide; 122: the first solid waveguide section;
  • 210 substrates; 211: process bumps; 211: process bumps;
  • 220 silicon optical chip body
  • 221 top surface
  • 300 optical fiber; 400: analog speckle converter; 400: analog speckle converter;
  • FIG. 1 is a connection schematic diagram of the first embodiment of the waveguide core layer of this application
  • FIG. 2 is a schematic diagram of the overall structure of the waveguide core layer in FIG. 1.
  • this embodiment provides a waveguide core layer 100 including: a first waveguide region 110 and a second waveguide region 120 connected in sequence along a first direction; and the first waveguide region 110 and the second waveguide The regions 120 all extend in the first direction; the end of the first waveguide region 110 facing away from the second waveguide region 120 is used to connect with the silicon optical chip 200, and the end of the second waveguide region 120 facing away from the first waveguide region 110 is used to connect to the optical fiber 300
  • the size of the first waveguide region 110 along the second direction increases from the end facing away from the second waveguide region 120 to the end near the second waveguide region 120; the refractive index of the second waveguide region 120 increases from the end near the first waveguide region 110 It decreases toward the end facing away from the first waveguide region 110; where the second direction is perpendicular to the first direction
  • the mode spot size of the silicon optical chip 200 is small, and the mode spot size of the optical fiber 300 is large, and the waveguide core layer 100 can be used to connect the silicon optical chip 200 and the optical fiber 300, thereby realizing one of the silicon optical chip 200 and the optical fiber 300 Communication.
  • the silicon optical chip 200 communicates with the optical fiber 300, light can enter the waveguide core layer 100 from the silicon optical chip 200 and then enter the optical fiber 300, or light can enter the waveguide core layer 100 from the optical fiber 300 and then enter the silicon optical chip 200 In this case, it is not specifically limited here.
  • the following embodiments are described by taking light input from the silicon optical chip 200 into the waveguide core layer 100 as an example.
  • the waveguide core layer 100 may include a first waveguide region 110 and a second waveguide region 120. Both the first waveguide region 110 and the second waveguide region 120 may extend in a first direction, and the first direction may be a linear direction, taking FIG. 2 as an example The first direction is the left-right direction in the figure, and the waveguide core layer 100 is provided with a first waveguide region 110 and a second waveguide region 120 in order from left to right.
  • the left end of the first waveguide region 110 can be connected to the silicon optical chip 200
  • the second The right end of the waveguide region 120 may be connected to the optical fiber 300
  • the right end of the first waveguide region 110 may be connected to the left end of the second waveguide region 120.
  • the end of the first waveguide region 110 near the second waveguide region 120 has a first cross-section 111;
  • the end of the second waveguide region 120 close to the first waveguide region 110 has a second section 121;
  • the first section 111 is parallel to the second section 121, and the first section 111 is perpendicular to the first direction;
  • the first section 111 and the second section The size of 121 may be different, that is, the two may not be completely docked.
  • the projection of the first section 111 on the second section 121 along the first direction coincides with the second section 121, that is, the first section 111 and the second section
  • the shape and size of 121 can be exactly the same and achieve complete docking, reducing the loss of light when entering the second waveguide region 120 from the first waveguide region 110.
  • the first waveguide region 110 may include: a third solid waveguide portion 113 extending from one end to the other end of the first waveguide region 110 in the first direction, that is, the entire first waveguide region 110 is a solid structure, and the solid structure It can be understood as a whole or a whole structure without spaces, so as to facilitate the processing of the first waveguide region 110.
  • the size of the first waveguide region 110 along the second direction increases from the end facing away from the second waveguide region 120 to the end near the second waveguide region 120.
  • the second direction is a direction perpendicular to the first direction, taking FIG.
  • the second direction is the up-down direction in the figure, and the size of the first waveguide region 110 along the second direction increases from the left end to the right end in the figure.
  • the shapes of the two edges of the first waveguide region 110 at both ends in the second direction may be linear, sinusoidal, or hyperbolic.
  • the mode spot expands from a circular mode spot equal to the mode spot size of the silicon optical chip 200 into an elliptical mode spot that becomes longer in the second direction.
  • the end of the first waveguide region 110 facing away from the second waveguide region 120 has a third cross-section 112, and the size of the first cross-section 111 in the second direction is 2-5 times the size of the third cross-section 112 in the second direction To ensure that the expansion effect of the mode spot in the second direction can be close to the size of the mode spot of the optical fiber 300 in the second direction.
  • the refractive index of the second waveguide region 120 decreases from the end close to the first waveguide region 110 toward the end away from the first waveguide region 110, that is, the refractive index of the second waveguide region 120 gradually decreases from the left end to the right end in FIG. It can be understood that there may be many ways to realize the change of the refractive index in the second waveguide region 120, for example, it may be realized by changing the material, or by changing the structure.
  • the refractive index of the second waveguide region 120 depends on the material change.
  • the second waveguide region 120 includes: a first solid waveguide portion 122 extending from one end to the other end of the second waveguide region 120 in the first direction;
  • the end of the first solid waveguide portion 122 near the first waveguide region 110 has a second cross-section 121; the refractive index of the first solid waveguide portion 122 decreases from the end near the first waveguide region 110 toward the end away from the first waveguide region 110.
  • the first solid waveguide portion 122 is a solid structure.
  • the first solid waveguide portion 122 as a whole constitutes the second waveguide region 120.
  • the refractive index of the first solid waveguide portion 122 can be gradually reduced from the left end to the right end in FIG.
  • the first segment, the second segment, and the third segment can be included in this order from left to right.
  • the refractive index of the first segment is greater than the refractive index of the second segment, and the refractive index of the second segment is greater than the refractive index of the third segment.
  • the first segment, the second segment, and the third segment can together constitute the first solid waveguide portion 122, so that the refractive index of the second waveguide region 120 changes.
  • the number of segments into which the second waveguide region 120 is divided, and the size of each segment can be set according to actual conditions, and are not specifically limited herein.
  • the dimensions of the second waveguide region 120 at any position along the second direction are equal, and the dimension of the second waveguide region 120 along the second direction can be considered as the width of the second waveguide region 120, that is, the second waveguide region 120 can be It is of equal width structure, which facilitates processing and reduces manufacturing costs.
  • the third direction may be a direction perpendicular to both the first direction and the second direction. Taking FIG. 2 as an example, the third direction may be a direction perpendicular to the paper surface.
  • the end of the first waveguide region 110 facing away from the second waveguide region 120 may be connected to the silicon optical chip 200, and then the end of the second waveguide region 120 facing away from the first waveguide region 110 may be connected to the optical fiber 300. It can enter the waveguide core layer 100 from the silicon optical chip 200, and then enter the optical fiber 300, so that the light can achieve speckle expansion in the second direction in the first waveguide region 110, and can be achieved in the second waveguide region 120 along the first
  • the spreading in three directions finally makes the mode spot after passing through the waveguide core layer 100 match the mode spot of the optical fiber 300 to realize communication.
  • both the first waveguide region 110 and the second waveguide region 120 may be composed of an optically transparent medium (such as silicon dioxide, etc.), so as to guide and limit the light propagation path.
  • the material and size of both can be set according to the mold spot size of the optical fiber 300 and the silicon optical chip 200.
  • the waveguide core layer 100 can be formed by thin film deposition, photolithography, or etching, without the need for fusion bonding, which can realize mass production and low cost.
  • both the optical fiber and the fused small-mode spot fiber need to be erected in a V-shaped groove, and the structure tolerance of the V-shaped groove directly affects the center of the small-mode spot optical fiber core, the center of the optical fiber, and the silicon optical chip.
  • the center of the optical fiber cannot be completely aligned, and there is a certain error in installation, which results in a large loss of the interface between the small-mode spot fiber and the silicon optical chip, and the channel uniformity after the connection is poor.
  • the waveguide core layer 100 in the embodiment of the present application may be formed on a flat surface or a curved surface, and both ends of the waveguide core layer 100 may be connected to the optical fiber 300 and the silicon optical chip 200, respectively, without being erected on the V-shaped groove.
  • the two ends of the optical fiber can be aligned with the silicon optical chip 200 and the optical fiber 300 respectively, which can realize accurate docking, and the channel uniformity after docking is good.
  • the size of the first waveguide region 110 along the third direction is the same as the size of the second waveguide region 120 along the third direction, and the size of the first waveguide region 110 along the third direction can be considered as that of the first waveguide region 110 Height, the size of the second waveguide region 120 along the third direction can be regarded as the height of the second waveguide region 120, that is, the height of the first waveguide region 110 can be equal to the height of the second waveguide region 120, the processing is simple, and the cost is low.
  • the waveguide core layer provided in this embodiment is provided with a first waveguide region and a second waveguide region connected in sequence along the first direction; and the first waveguide region and the second waveguide region both extend along the first direction; the first waveguide region faces away One end of the second waveguide area is used to connect to the silicon optical chip, and the end of the second waveguide area facing away from the first waveguide area is used to connect to the optical fiber; the size of the first waveguide area along the second direction is from the end facing away from the second waveguide area
  • the end near the second waveguide region increases; the refractive index of the second waveguide region decreases from the end near the first waveguide region to the end away from the first waveguide region, so that light passing through the first waveguide region and the second waveguide region can be
  • the small mode spot is transformed into a large mode spot matched with the optical fiber, and by connecting the first waveguide region and the second waveguide region to the silicon optical chip and the optical fiber, respectively, the waveguide core layer and the silicon optical chip can be accurately docked,
  • This embodiment is an improvement on the way in which the refractive index of the second waveguide region 120 changes based on the first embodiment.
  • 3 is a schematic diagram of the overall structure of the second embodiment of the waveguide core layer of the present application.
  • the first direction may be the left-right direction in the figure
  • the second direction may be the up-down direction in the figure
  • the third direction may be perpendicular to The direction of the paper.
  • the second waveguide region 120 includes a plurality of second solid waveguide portions 123 spaced apart along the first direction, and one of the second solid waveguide portions 123 close to the first waveguide region 110 among the plurality of second solid waveguide portions 123 It has a second cross section 121, and the second cross section 121 is located at an end of the second solid waveguide portion 123 close to the first waveguide region 110.
  • the refractive index change of the second waveguide portion 120 is improved by the change of the material, while in this embodiment, the refractive index change of the second waveguide region 120 is changed by the structure.
  • the second waveguide region 120 may include a plurality of second solid waveguide portions 123, and the material of each second solid waveguide portion 123 may be the same, thereby reducing processing costs.
  • the materials of the second solid waveguide portion 123 and the first waveguide region 110 may also be the same, which further reduces the cost.
  • the plurality of second solid waveguide portions 123 may be arranged at intervals along the first direction. It can be understood that the space between two adjacent second solid waveguide portions 123 may be filled with other media, which may be air, etc.
  • the light sparse medium of the second solid waveguide portion 123, the medium and the second solid waveguide portion 123 may jointly constitute the entire second waveguide region 120, and light will diverge when entering the medium from the second solid waveguide portion 123, and each The interval between the two solid waveguide portions 123 and its left side serves as a group of units, and the second waveguide region 120 may be arranged from multiple groups of units in order from left to right. When light passes through a group of units, its mode spot will expand a little. Eventually, the mode spot size of the optical fiber 300 is equal or similar.
  • the refractive index change of the entire second waveguide region 120 can be realized by the arrangement of a plurality of second solid waveguide portions 123, and there may also be a variety of specific arrangements, for example, each second solid waveguide portion 123 is along the first The length of the direction may gradually decrease from left to right, and the separation distance between two adjacent second solid waveguide portions 123 may be equal.
  • the distance between any two adjacent second solid waveguide portions 123 is not equal, that is, the length of each second solid waveguide portion 123 in the first direction may be equal, and the two adjacent second solid waveguide portions
  • the separation distance between the waveguide portions 123 may be unequal, so that it is convenient to process a plurality of second solid waveguide portions 123.
  • the second waveguide region 120 has six second solid waveguide portions 123, and each second solid waveguide portion 123 may have an interval on the left side, and the six intervals are sequentially numbered as intervals from left to right 1.
  • Interval 2 Interval 3, Interval 4, Interval 5, Interval 6
  • the distance between interval 1 and interval 2 is equal
  • the distance between interval 3 and interval 4 is equal
  • the distance between interval 5 and interval 6 is equal
  • the distance between interval 1 Less than the distance of the gap 3 is less than the distance of the gap 6, so that the refractive index of the second waveguide region 120 decreases from left to right.
  • the distance between two adjacent second solid waveguide portions 123 increases from the end near the first waveguide region 110 to the end away from the first waveguide region 110, that is, interval 1, interval 2, interval 3,
  • the distances of the interval 4, the interval 5, and the interval 6 increase in sequence, the effect of speckle expansion is good, and the length dimension of the second waveguide region 120 in the first direction can be reduced.
  • This embodiment is to improve the structure of the first waveguide region 110 on the basis of the first embodiment or the second embodiment, wherein the structure of the second waveguide region 120 can refer to the first embodiment or the second embodiment, which will not be repeated here.
  • . 4 is a schematic diagram of the overall structure of the third embodiment of the waveguide core layer of the present application.
  • the first direction may be the left-right direction in the figure
  • the second direction may be the up-down direction in the figure
  • the third direction may be perpendicular to The direction of the paper.
  • the first waveguide region 110 includes: a first sub-waveguide region 114 and a second sub-waveguide region 116 that are sequentially arranged along the first direction; an end of the second sub-waveguide region 116 that faces away from the first sub-waveguide region 114 and the first Two waveguide regions 120 are connected; the first sub-waveguide region 114 includes: a first solid sub-waveguide portion 115 extending from one end to the other end of the first sub-waveguide region 114 in the first direction; the second sub-waveguide region 116 includes A plurality of second solid sub-waveguide portions 117 arranged at intervals in the direction.
  • the first waveguide region 110 is a solid structure extending from one end to the other end, and in this embodiment, the first waveguide portion 110 includes the first sub-waveguide region 114 and the second In the sub-waveguide region 116, the first sub-waveguide region 114 may be a first solid sub-waveguide portion 115 extending from one end to the other end, and the first solid sub-waveguide portion 115 may be a solid structure made of the same material.
  • the first sub-waveguide region 114 may be a first solid sub-waveguide portion 115 extending from one end to the other end
  • the first solid sub-waveguide portion 115 may be a solid structure made of the same material.
  • the second sub-waveguide region 116 is disposed between the first sub-waveguide region 114 and the second waveguide region 120.
  • the second sub-waveguide region 116 may be composed of a plurality of second solid sub-waveguide portions 117 disposed at intervals, the second solid sub-waveguide
  • the material of the portion 117 may be equal to the material of the first solid sub-waveguide portion 115. It can be understood that the space between two adjacent second solid sub-waveguide portions 117 may be filled with other media, and the medium may be an optically thin medium such as air having a refractive index less than that of the second solid sub-waveguide portions 117, the medium and the second
  • the solid sub-waveguide portion 117 may collectively constitute the entire second sub-waveguide region 116.
  • the mode spot required after the light passes through the second waveguide region 120 The enlarged size becomes smaller, which can shorten the length of the second waveguide region 120 along the first direction, thereby reducing the size of the entire waveguide core layer 100.
  • the distance between any two adjacent second solid sub-waveguide portions 117 is not equal. That is, the length of each second solid sub-waveguide portion 117 in the first direction can be equal, and the separation distance between two adjacent second solid sub-waveguide portions 117 can be unequal, thereby facilitating the processing of multiple second solid sub-waveguides Waveguide part 117.
  • the distance between two adjacent second solid sub-waveguide portions 117 increases from the end close to the first solid sub-waveguide portion 115 to the end facing away from the first solid sub-waveguide portion 115, and the speckle expansion effect is good, And the length dimension of the second waveguide region 120 along the first direction can be further reduced.
  • the material and arrangement manner of the second solid sub-waveguide portion 117 may be the same as the material and arrangement manner of the second solid waveguide portion 123 in Embodiment 2.
  • the material and arrangement manner of the second solid waveguide portion 123 in Embodiment 2. refer to Embodiment 2.
  • FIG. 5 is a schematic diagram of the overall structure of the fourth embodiment of the waveguide core layer of the present application.
  • the first direction may be the left-right direction in the figure
  • the second direction may be the up-down direction in the figure
  • the third direction may be perpendicular to The direction of the paper.
  • the waveguide core layer 100 further includes a third waveguide region 130, and the third cross-section 112 of the first waveguide region 110 is connected to the silicon optical chip 200 through the third waveguide region 130; to be perpendicular to the extending direction of the third waveguide region 130
  • the plane of is a cross-section, and the cross-sectional shape of the third waveguide region 130 at any position is the same.
  • a third waveguide region 130 is also provided between the first waveguide region 110 and the silicon optical chip 200.
  • the third waveguide region 130 may have a fixed cross-sectional structure, that is, a cross section perpendicular to the extending direction of the third waveguide region 130 is taken as a cross-section, and the cross-sectional size and shape of the third waveguide region 130 are equal everywhere.
  • the cross-sectional shape of the third waveguide region 130 may also be various, for example, circular, triangular, etc.
  • the cross-sectional shape of the third waveguide region 130 may be square, so that it can be processed by processes such as deposition, which is convenient to manufacture.
  • the light from the silicon optical chip 200 just enters the waveguide core layer 100 and is unstable, by setting the third waveguide region 130, the light can be gradually stabilized in the third waveguide region 130, and then pass through the first waveguide region 110 and the first The second waveguide region 120 performs speckle expansion, which ensures the stability of signal transmission.
  • an end of the third waveguide region 130 near the first waveguide region 110 has a fourth cross-section 131; the fourth cross-section 131 is parallel to the third cross-section 112, and the third cross-section 112 is perpendicular to the first direction; the third cross-section 112 is along The projection of the first direction on the fourth section 131 coincides with the fourth section 131, that is, the third section 112 and the fourth section 131 are completely butted, so that the loss of light passing through the third section 112 and the fourth section 131 is small, and the first The first waveguide region 110, the second waveguide region 120, and the third waveguide region 130 can be formed in a single deposition and etching process without separate processing, which is convenient for processing and low in cost.
  • the extension direction of the third waveguide region 130 may be a linear structure or a curved structure. When it is a linear direction, the extension direction of the third waveguide region 130 may coincide with the first direction, so that a single optical fiber 300 and silicon can be accurately realized Docking of the optical chip 200.
  • FIG. 6 is another schematic structural view of the third waveguide region in FIG. 5. Please refer to FIG. 6.
  • the extending direction of the third waveguide region 130 may be a curved direction.
  • the silicon optical chip 200 in order to transmit a large number of signals, it is usually necessary to dock the silicon optical chip 200 with a plurality of optical fibers 300 (that is, an optical fiber array), but between the multiple interfaces used to connect to the optical fiber 300 in the silicon optical chip 200 The distance is small, and may even be smaller than the diameter of the optical fiber 300. Therefore, it is difficult to accurately dock the multiple interfaces of the optical fiber array and the silicon optical chip 200.
  • FIG. 1 is another schematic structural view of the third waveguide region in FIG. 5. Please refer to FIG. 6.
  • the extending direction of the third waveguide region 130 may be a curved direction.
  • the third waveguide region 130 in each waveguide core layer 100 can extend along the curve direction to ensure that each optical fiber 300 is connected to the interface The accurate docking is not required for the distance between the multiple interfaces of the silicon optical chip 200.
  • the extending direction of the third waveguide region 130 in each waveguide core layer 100 may be curves of different shapes, and the third waveguide region 130 of the waveguide core layer 100 located in the middle may extend along a straight line, depending on the The size and the size of the silicon optical chip 200 are set.
  • FIG. 7 is a schematic diagram of the overall structure of the die spot converter of the present application. Please refer to FIG. 7.
  • This embodiment provides a die spot converter 400, including: a substrate layer 410, a cover layer 420, and a waveguide core layer 100; a waveguide core layer 100 and the cover layer 420 are disposed on the substrate layer 410, and the cover layer 420 covers the waveguide core layer 100.
  • the structure and function of the waveguide core layer 100 in this embodiment may be the same as the structures of the above-mentioned embodiments.
  • the substrate layer 410 can be a structure such as a glass substrate.
  • the waveguide core layer 100 can be disposed on the upper surface of the glass substrate by deposition or the like, thereby facilitating the formation of the waveguide core layer 100.
  • the cover layer 420 can be deposited A process such as is formed above the substrate layer 410 and the waveguide core layer 100 so that the cover layer 420 and the substrate layer 410 can cover the waveguide core layer 100.
  • the material of the substrate layer 410 may be the same as the material of the cover layer 420. Alternatively, it may be the same as the dielectric material filled in the gap between the second solid waveguide portion 123 and the second solid sub-waveguide portion 117, thereby reducing Cost of production.
  • the refractive index of the substrate layer 410 and the cover layer 420 may be smaller than the refractive index of each solid waveguide portion or solid sub-waveguide portion, so as to jointly play a role of limiting and guiding light propagation.
  • the number of the waveguide core layer 100 is plural, and the plurality of waveguide core layers 100 are arranged on the substrate layer 410 at intervals in the second direction, so that the optical fiber array and the silicon optical chip 200 can be docked.
  • the plurality of waveguide core layers 100 are arranged on the substrate layer 410 at intervals in the second direction, so that the optical fiber array and the silicon optical chip 200 can be docked.
  • the mode-spot converter provided in this embodiment is provided with a first waveguide region and a second waveguide region connected in sequence in the first direction in the waveguide core layer; and the first waveguide region and the second waveguide region both extend in the first direction;
  • the end of the first waveguide area facing away from the second waveguide area is used to connect with the silicon optical chip, and the end of the second waveguide area facing away from the first waveguide area is used to connect to the optical fiber;
  • the size of the first waveguide area along the second direction is away from the second One end of the waveguide area increases toward the end close to the second waveguide area;
  • the refractive index of the second waveguide area decreases from the end close to the first waveguide area toward the end away from the first waveguide area, so that light passes through the first waveguide area and the first
  • the two waveguide regions can be transformed from small mode spots to large mode spots that match the optical fiber, and by connecting the first waveguide region and the second waveguide region to the silicon optical chip and the optical fiber, respectively, the accuracy of the
  • FIG. 8 is a schematic diagram of the overall structure of the first embodiment of the silicon optical device of the present application. Please refer to FIG. 8.
  • This embodiment provides a silicon optical device, including a silicon optical chip 200, an optical fiber 300, and a mode converter 400; mode conversion The optical device 400 is connected between the silicon optical chip 200 and the optical fiber 300.
  • the silicon optical chip 200 and the optical fiber 300 may have a structure that enables optical communication.
  • the speckle converter 400 may have the same structure and function as in the fifth embodiment. For details, refer to the fifth embodiment, and details are not described herein again.
  • the mode-spot converter 400 includes only the first waveguide region 110 and the second waveguide region 120, the first waveguide region 110 of the mode-spot converter 400 is connected to the silicon optical chip 200; and when the mode-spot converter 400 includes When the third waveguide region 130, the first waveguide region 110, and the second waveguide region 120, the first waveguide region 110 may be connected to the silicon optical chip 200 through the third waveguide region 130.
  • the second waveguide region 120 of the mode spot converter 400 is connected to the optical fiber 300.
  • the silicon optical chip 200 includes a substrate 210 and a silicon optical chip body 220 disposed on the substrate 210.
  • the silicon optical chip body 220 is connected to the waveguide core layer 100 of the speckle converter 400.
  • the substrate 210 may be a structure such as a glass substrate for supporting function.
  • the silicon optical chip body 220 may be formed on the substrate 210 to facilitate manufacturing.
  • the silicon optical chip body 220 may be a main structure for the silicon optical chip 200 to implement communication.
  • the waveguide input end or the waveguide output end of the silicon optical chip body 220 is connected to the waveguide core layer 100.
  • the silicon optical chip 200 is used as a signal transmitting device, the waveguide output end of the silicon optical chip body 220 is connected to the waveguide core layer 100.
  • the chip 200 serves as a signal receiving device, and the waveguide input end of the silicon optical chip body 220 is connected to the waveguide core layer 100.
  • the silicon optical device further includes a cover plate 500.
  • the cover plate 500 includes a first connection surface 510 and a second connection surface 520 connected to the first connection surface 510.
  • the first connection surface 510 and the second connection surface 520 are perpendicular to each other.
  • the first connection surface 510 is fixedly connected to the end surface 411 of the substrate layer 410 along the first direction
  • the second connection surface 510 is fixedly connected to the top surface 221 of the silicon optical chip body 220 facing away from the substrate 210.
  • the first direction may be the left-right direction in FIG. 8
  • the cover plate 500 may be a rectangular parallelepiped structure, which may have adjacent first and second connection surfaces 510 and 520, and the first connection surface 510 may be in contact with the substrate layer
  • the end surface 411 of 410 is fixedly connected, and the second connection surface 520 can be fixedly connected to the top surface 221 of the silicon optical chip body 220, so that the die spot converter 400 can be flipped with the substrate layer 410 on top and the cover layer 420 on bottom Between the silicon optical chip 200 and the optical fiber 300.
  • the silicon optical chip 200 due to the formation process of the silicon optical chip 200, there will be process protrusions 211 on the surface of the silicon optical chip 200 used to connect the mold spot converter 400.
  • the bottom layer 410 is normally installed between the silicon optical chip 200 and the optical fiber 300 in a downward manner, and the substrate layer 410 will abut the process bump 211, so that there is a gap between the waveguide core layer 100 and the silicon optical chip body 220, and light transmission Easy to wear.
  • the thickness of the cover layer 420 is less than the thickness of the substrate layer 410, and in this embodiment, the mold spot converter 400 is flipped through the cover plate 500 It is installed between the silicon optical chip 200 and the optical fiber 300, so that the cover layer 420 with a small thickness is located below.
  • the cover layer 420 there is no interference between the cover layer 420 and the process protrusion 211, that is, the waveguide core layer 100 can be
  • the chip body 220 realizes seamless connection, reducing the loss of optical transmission.
  • the first connection surface 510 is glued to the end surface 411 of the substrate layer 410; meanwhile, the second connection surface 520 can be connected to the end of the silicon optical chip body 220
  • the top surface 221 is glued, easy to install and realize.
  • the silicon optical device provided in this embodiment is provided with a first waveguide region and a second waveguide region connected in the first direction in sequence in the waveguide core layer; and the first waveguide region and the second waveguide region both extend in the first direction; One end of the waveguide area facing away from the second waveguide area is used to connect with the silicon optical chip, and the end of the second waveguide area facing away from the first waveguide area is used to connect to the optical fiber; the size of the first waveguide area along the second direction is away from the second waveguide One end of the area increases toward the end close to the second waveguide area; the refractive index of the second waveguide area decreases from the end close to the first waveguide area toward the end facing away from the first waveguide area, so that light passes through the first waveguide area and the second
  • the waveguide region can be transformed from a small mode spot to a large mode spot that matches the optical fiber, and by connecting the first waveguide region and the second waveguide region to the silicon optical chip and the optical fiber, respectively, the waveguide core layer and the silicon optical
  • FIG. 9 is a schematic diagram of the overall structure of the second embodiment of the silicon optical device of the present application. Please refer to FIG. 9.
  • the substrate layer 410 and the cover plate 500 may be an integrally formed integral piece. That is, the first connection surface 510 and the end surface 411 can be fused together, thereby reducing processing and installation steps, and improving the assembly efficiency of the silicon optical device.
  • This embodiment provides an optical communication device, including a communication device and a silicon optical device, and the silicon optical device is communicatively connected to the communication device.
  • the communication device may be a common device such as a router or a server, which is not specifically limited here.
  • the optical communication device provided in this embodiment is provided with a first waveguide region and a second waveguide region sequentially connected along the first direction on the waveguide core layer; and the first waveguide region and the second waveguide region both extend along the first direction; One end of the waveguide area facing away from the second waveguide area is used to connect with the silicon optical chip, and the end of the second waveguide area facing away from the first waveguide area is used to connect to the optical fiber; the size of the first waveguide area along the second direction is away from the second waveguide One end of the area increases toward the end close to the second waveguide area; the refractive index of the second waveguide area decreases from the end close to the first waveguide area toward the end facing away from the first waveguide area, so that light passes through the first waveguide area and the second
  • the waveguide area can be transformed from a small mode spot to a large mode spot that matches the optical fiber, and by connecting the first waveguide area and the second waveguide area to the silicon optical chip and the optical fiber, respectively, the waveguide core layer and the silicon optical
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.
  • first is defined
  • second features may include at least one of the features explicitly or implicitly.
  • multiple means at least two, such as two, three, etc., unless specifically stated otherwise Limit.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrated; it can be mechanically connected, electrically connected or communicable with each other; it can be directly connected or indirectly connected through an intermediary, it can be the connection between two components or the interaction between two components, Unless otherwise clearly defined.
  • installation can be a fixed connection or a detachable connection , Or integrated; it can be mechanically connected, electrically connected or communicable with each other; it can be directly connected or indirectly connected through an intermediary, it can be the connection between two components or the interaction between two components, Unless otherwise clearly defined.

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Abstract

一种波导芯层（100）、模斑转换器（400）、硅光器件及光通信设备。波导芯层（100）包括沿第一方向依次连接的第一波导区（110）以及第二波导区（120）；且第一波导区（110）及第二波导区（120）均沿第一方向延伸；第一波导区（110）背离第二波导区（120）的一端用于与硅光芯片（200）连接，第二波导区（120）背离第一波导区（110）的一端用于与光纤（300）连接；第一波导区（110）沿第二方向的尺寸从背离第二波导区（120）的一端向靠近第二波导区（120）的一端增大；第二波导区（120）的折射率从靠近第一波导区（110）的一端向背离第一波导区（110）的一端减小，使得光经过第一波导区（110）及第二波导区（120）可以由小模斑变换为与光纤（300）匹配的大模斑，保证波导芯层（100）与硅光芯片（200）精确对接，提高了硅光器件及光通信设备的通道均匀性；并且波导芯层（100）可以直接加工成型，无需熔接，制造成本低。

Description

波导芯层、模斑转换器、硅光器件及光通信设备
本申请要求于2018年12月29日提交中国专利局、申请号为201811640098.1、申请名称为“波导芯层、模斑转换器、硅光器件及光通信设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光通信技术领域，尤其涉及一种波导芯层、模斑转换器、硅光器件及光通信设备。
背景技术
随着通信技术的发展，硅光芯片在光纤通信技术领域中的应用也越来越广范。由于硅光芯片的模斑尺寸较小，而光纤的模斑尺寸较大，导致硅光芯片与光纤之间因模斑大小不匹配而无法直接实现连接，因此，如何实现基于硅光芯片的收发模块与基于光纤的传输链路之间的有效耦合逐渐成为研究的热点。
目前，为了保证光纤与硅光芯片的准确对接，光纤架设在V型槽中,使得光纤的中心可以正对硅光芯片的接口，然后在光纤的端部熔接一段高折射率差的小模斑光纤，然后将小模斑光纤连接到硅光芯片上，通过小模斑光纤实现硅光芯片的模斑与光纤模斑的过渡。
但是，由于光纤及小模斑光纤的芯径不匹配，熔接工艺复杂且成本较高，另外，熔接后的小模斑光纤也需要架设在V型槽中，由于V型槽的结构容差直接影响小模斑光纤芯径的位置，使得小模斑光纤与硅光芯片对接后存在光损耗且通道均匀性差。
发明内容
本申请实施例提供一种波导芯层、模斑转换器、硅光器件及光通信设备，以解决目前熔接小模斑光纤的方式成本高且与硅光芯片对接后光损耗大、通道均匀性差的问题。
本申请实施例提供一种波导芯层，包括：沿第一方向依次连接的第一波导区以及第二波导区；且所述第一波导区及所述第二波导区均沿所述第一方向延伸；所述第一波导区背离所述第二波导区的一端用于与硅光芯片连接，所述第二波导区背离所述第一波导区的一端用于与光纤连接；所述第一波导区沿第二方向的尺寸从背离所述第二波导区的一端向靠近所述第二波导区的一端增大；所述第二波导区的折射率从靠近所述第一波导区的一端向背离所述第一波导区的一端减小；其中，所述第二方向与所述第一方向垂直，可以实现波导芯层与硅光芯片的精确对接，减少了通信时的光损耗，提高了硅光器件及光通信设备的通道均匀性；另外，由于波导芯层无需熔接到光纤上，可以减低制造成本。
如上所述的波导芯层，其中，所述第一波导区靠近所述第二波导区的一端具有第一截面；所述第二波导区靠近所述第一波导区的一端具有第二截面；所述第一截面与所述第二截面平行，且所述第一截面与所述第一方向垂直设置；所述第一截面沿所述第一方向在所 述第二截面上的投影与所述第二截面重合，使得第一截面和第二截面实现完全对接，减少光从第一波导区进入第二波导区时的损耗。
如上所述的波导芯层，其中，所述第二波导区的任意位置沿所述第二方向的尺寸都相等，从而方便加工，降低制造成本。
如上所述的波导芯层，其中，所述第一波导区沿第三方向的尺寸与所述第二波导区沿所述第三方向的尺寸相等，其中，所述第三方向与所述第二方向垂直，且所述第三方向还与所述第一方向垂直，加工简单，成本低。
如上所述的波导芯层，其中，所述第一波导区背离所述第二波导区的一端具有第三截面，所述第一截面沿所述第二方向的尺寸是所述第三截面沿所述第二方向的尺寸的2-5倍，保证模斑在第二方向上的扩大效果可以接近光纤的模斑在第二方向上的尺寸。
如上所述的波导芯层，其中，所述第二波导区包括：沿所述第一方向从所述第二波导区的一端延伸至另一端的第一实心波导部；所述第一实心波导部靠近所述第一波导区的一端具有所述第二截面；所述第一实心波导部的折射率由靠近所述第一波导区的一端向背离所述第一波导区的一端减小，使得经过波导芯层后的模斑可以与光纤的模斑匹配，实现通信，且通道均匀性好。
如上所述的波导芯层，其中，所述第二波导区包括沿所述第一方向间隔设置的多个第二实心波导部，多个所述第二实心波导部中靠近所述第一波导区的一个所述第二实心波导部具有所述第二截面，且所述第二截面位于所述第二实心波导部靠近所述第一波导区的一端，使得经过波导芯层后的模斑可以与光纤的模斑匹配，实现通信，且通道均匀性好。
如上所述的波导芯层，其中，任意相邻两个所述第二实心波导部之间的距离均不相等，从而方便加工多个第二实心波导部。
如上所述的波导芯层，其中，相邻两个所述第二实心波导部之间的距离由靠近所述第一波导区的一端向背离所述第一波导区的一端增大，扩斑效果好，并可以减小第二波导区的沿第一方向的长度尺寸。
如上所述的波导芯层，其中，所述第一波导区包括：沿所述第一方向从所述第一波导区的一端延伸至另一端的第三实心波导部，从而方便加工第一波导区。
如上所述的波导芯层，其中，所述第一波导区包括：沿所述第一方向依次设置的第一子波导区和第二子波导区；所述第二子波导区背离所述第一子波导区的一端与所述第二波导区连接；所述第一子波导区包括：沿所述第一方向从所述第一子波导区的一端延伸至另一端的第一实心子波导部；所述第二子波导区包括沿所述第一方向间隔设置的多个第二实心子波导部，当光经过第二子波导区后，其模斑不仅可以在第二方向上进一步扩大，同时，模斑在第三方向上也有所扩大，因此，光经过第二波导区后模斑所需要扩大的尺寸变小，进而可以缩短第二波导区沿第一方向的长度，进而缩小整个波导芯层的尺寸。
如上所述的波导芯层，其中，任意相邻两个所述第二实心子波导部之间的距离不相等，从而方便加工多个第二实心子波导部。
如上所述的波导芯层，其中，相邻两个所述第二实心子波导部之间的距离由靠近所述第一实心子波导部的一端向背离所述第一实心子波导部的一端增大，扩斑效果好，并可以进一步减小第二波导区的沿第一方向的长度尺寸。
如上所述的波导芯层，其中，所述波导芯层还包括第三波导区，所述第一波导区通过 所述第三波导区与所述硅光芯片连接；以垂直于所述第三波导区延伸方向的平面为横截面，所述第三波导区任意位置的所述横截面形状都相同，光在第三波导区中可以由不稳定状态变为稳定状态，保证了信号传输的稳定性。
如上所述的波导芯层，其中，所述第三波导区靠近所述第一波导区的一端具有第四截面；所述第四截面与所述第三截面平行，且所述第三截面与所述第一方向垂直设置；所述第三截面沿所述第一方向在所述第四截面上的投影与所述第四截面重合，加工方便，成本低，减小光穿过第三截面和第四截面的损耗小。
如上所述的波导芯层，其中，所述第三波导区的延伸方向与所述第一方向重合，可以准确实现单根光纤与硅光芯片的对接。
如上所述的波导芯层，其中，所述第三波导区的延伸方向为曲线方向，可以准确实现光纤阵列与硅光芯片的多个接口对接。
本申请实施例提供一种模斑转换器，包括：衬底层、覆盖层以及所述的波导芯层；所述波导芯层及所述覆盖层设置在所述衬底层上，且所述覆盖层包覆所述波导芯层，可以起到保护和支撑波导芯层的作用，并且方便安装，提高了模斑转换器的通道均匀性。
如上所述的模斑转换器，其中，所述波导芯层的数量为多个，多个所述波导芯层沿所述第二方向间隔设置在所述衬底层上，从而可以实现光纤阵列与硅光芯片的对接。
本申请实施例提供一种硅光器件，包括硅光芯片、光纤以及所述的模斑转换器；所述模斑转换器连接在所述硅光芯片与所述光纤之间，能够实现光通信，且通道均匀性好。
如上所述的硅光器件，其中，所述硅光芯片包括基板以及设置于所述基板上的硅光芯片本体，所述硅光芯片本体与所述模斑转换器的所述波导芯层连接，使得硅光芯片本体可以形成在基板上，从而方便制造。
如上所述的硅光器件，其中，所述硅光器件还包括盖板，所述盖板包括第一连接面和与所述第一连接面连接的第二连接面，所述第一连接面与所述第二连接面相互垂直，且所述第一连接面与所述衬底层沿所述第一方向的端面固定连接，所述第二连接面与所述硅光芯片本体背离所述基板的顶面固定连接，衬底层无需抵靠在工艺凸起外，使得波导芯层可以与硅光芯片本体实现无缝连接，减小了光传输的损耗。
如上所述的硅光器件，其中，所述衬底层与所述盖板为一体成型的一体件，从而减少加工及安装步骤，提高硅光器件的组装效率。
本申请实施例提供一种光通信设备，包括通信装置以及所述的硅光器件，所述硅光器件与所述通信装置通信连接，能够实现光通信，且通道均匀性好。
本申请实施例提供的波导芯层、模斑转换器、硅光器件及光通信设备，通过在波导芯层设置沿第一方向依次连接的第一波导区以及第二波导区；且第一波导区及第二波导区均沿第一方向延伸；第一波导区背离第二波导区的一端用于与硅光芯片连接，第二波导区背离第一波导区的一端用于与光纤连接；第一波导区沿第二方向的尺寸从背离第二波导区的一端向靠近第二波导区的一端增大；第二波导区的折射率从靠近第一波导区的一端向背离第一波导区的一端减小，使得光经过第一波导区及第二波导区可以由小模斑变换为与光纤匹配的大模斑，并通过将第一波导区和第二波导区分别与硅光芯片和光纤连接，可以实现波导芯层与硅光芯片的精确对接，减少了通信时的光损耗，提高了硅光器件及光通信设备的通道均匀性；另外，由于波导芯层无需熔接到光纤上，可以减低制造成本。
附图说明
图1为本申请波导芯层实施例一的连接示意图；
图2为图1中波导芯层的整体结构示意图；
图3为本申请波导芯层实施例二的整体结构示意图；
图4为本申请波导芯层实施例三的整体结构示意图；
图5为本申请波导芯层实施例四的整体结构示意图；
图6为图5中第三波导区的另一结构示意图；
图7为本申请模斑转换器的整体结构示意图；
图8为本申请硅光器件实施例一的整体结构示意图；
图9为本申请硅光器件实施例二的整体结构示意图。
附图标记说明：
100：波导芯层；                             110：第一波导区；
111：第一截面；                             112：第三截面；
113：第三实心波导部；                       114：第一子波导区；
115：第一实心子波导部；                     116：第二子波导区；
117：第二实心子波导部；                     120：第二波导区；
121：第二截面；                             122：第一实心波导部；
123：第二实心波导部；                       130：第三波导区；
131：第四截面；                             200：硅光芯片；
210：基板；                                 211：工艺凸起；
220：硅光芯片本体；                         221：顶面；
300：光纤；                                 400：模斑转换器；
410：衬底层；                               411：端面；
420：覆盖层；                               500：盖板；
510：第一连接面；                           520：第二连接面。
具体实施方式
实施例一
图1为本申请波导芯层实施例一的连接示意图；图2为图1中波导芯层的整体结构示意图。请参考图1和图2，本实施例提供一种波导芯层100，包括：沿第一方向依次连接的第一波导区110以及第二波导区120；且第一波导区110及第二波导区120均沿第一方向延伸；第一波导区110背离第二波导区120的一端用于与硅光芯片200连接，第二波导区120背离第一波导区110的一端用于与光纤300连接；第一波导区110沿第二方向的尺寸从背离第二波导区120的一端向靠近第二波导区120的一端增大；第二波导区120的折射率从靠近第一波导区110的一端向背离第一波导区110的一端减小；其中，第二方向与第一方向垂直。
具体地，硅光芯片200的模斑尺寸较小，而光纤300的模斑尺寸较大，波导芯层100可以用于连接硅光芯片200与光纤300，从而实现硅光芯片200和光纤300之间的通信。 可以理解，硅光芯片200与光纤300通信时，光可以从硅光芯片200输入波导芯层100，然后进入光纤300中，光也可以从光纤300输入波导芯层100，然后进入硅光芯片200中，在此不做具体限定。但是为了便于描述，以下各实施例均以光从硅光芯片200输入波导芯层100中为例进行说明。
波导芯层100可以包括第一波导区110和第二波导区120，第一波导区110和第二波导区120都可以沿第一方向延伸，第一方向可以为直线方向，以图2为例，第一方向为图中左右方向，波导芯层100从左到右依次设置有第一波导区110和第二波导区120，第一波导区110的左端可以跟硅光芯片200连接，第二波导区120的右端可以跟光纤300连接，第一波导区110的右端可以与第二波导区120左端连接，可以理解，第一波导区110靠近第二波导区120的一端具有第一截面111；第二波导区120靠近第一波导区110的一端具有第二截面121；第一截面111与第二截面121平行，且第一截面111与第一方向垂直设置；第一截面111和第二截面121的尺寸可以不同，即两者可以并非完全对接，可选地，第一截面111沿第一方向在第二截面121上的投影与第二截面121重合，即第一截面111和第二截面121的形状和尺寸可以完全相同并实现完全对接，减少光从第一波导区110进入第二波导区120时的损耗。
本实施例中，第一波导区110可以包括：沿第一方向从第一波导区110的一端延伸至另一端的第三实心波导部113，即第一波导区110整体为实心结构，实心结构可以理解为没有间隔存在的一整体或一整块结构，从而方便加工第一波导区110。第一波导区110沿第二方向的尺寸从背离第二波导区120的一端向靠近第二波导区120的一端增大，第二方向为与第一方向垂直的方向，以图2为例，第二方向为图中的上下方向，第一波导区110沿第二方向的尺寸从图中的左端向右端增大。该增大方式可以有多种，例如可以是线性增大或指数型增大等，在此不做具体限定。可选地，第一波导区110沿第二方向两端的两个边缘的形状可以为直线形、正弦形状或双曲线形等。
当光从硅光芯片200传输到波导芯层100的第一波导区110时，由于第一波导区110在第二方向上的尺寸增大，使得光束在第二方向上的尺寸增大，即光通过第一波导区110后，模斑由与硅光芯片200模斑尺寸相等的圆形模斑扩大为第二方向变长的椭圆形模斑。
进一步可选地，第一波导区110背离第二波导区120的一端具有第三截面112，第一截面111沿第二方向的尺寸是第三截面112沿第二方向的尺寸的2-5倍，保证模斑在第二方向上的扩大效果可以接近光纤300的模斑在第二方向上的尺寸。
第二波导区120的折射率从靠近第一波导区110的一端向背离第一波导区110的一端减小，即第二波导区120的折射率从图2中的左端向右端逐渐变小。可以理解，第二波导区120中折射率的变化实现方式可以有多种，例如可以是依靠材质改变来实现，或者是依靠结构改变来实现。
本实施例中以第二波导区120的折射率依靠材质改变进行说明，第二波导区120包括：沿第一方向从第二波导区120的一端延伸至另一端的第一实心波导部122；第一实心波导部122靠近第一波导区110的一端具有第二截面121；第一实心波导部122的折射率由靠近第一波导区110的一端向背离第一波导区110的一端减小。
第一实心波导部122为实心结构，第一实心波导部122整体构成第二波导区120，第一实心波导部122的折射率可以由图2中的左端向右端逐渐减少，例如制造第二波导区120 时，可以从左到右依次包括第一段、第二段和第三段，第一段的折射率大于第二段的折射率，第二段的折射率大于第三段的折射率，第一段、第二段、第三段可以共同构成第一实心波导部122，从而实现第二波导区120折射率的变化。另外，第二波导区120所分成的段数，以及每段的尺寸可以根据实际情况进行设置，在此不做具体限定。可选地，第二波导区120的任意位置沿第二方向的尺寸都相等，第二波导区120沿第二方向的尺寸可以认为是第二波导区120的宽度，即第二波导区120可以为等宽度结构，从而方便加工，降低制造成本。
可以理解，光从第二波导区120的左端输入，然后从第二波导区120的右端输出，由于第二波导区120折射率从左到右逐渐减小，使得光不断从光密介质向光疏介质传输，光逐步发散，导致第二波导区120右端的模斑尺寸大于第二波导区120左端的模斑，即光经过第二波导区120可以进一步起到扩斑的作用。但是，由于光经过第一波导区110时，模斑在第二方向上已经实现扩大，当光再经过第二波导区120时，由于在第二方向上第二波导区120已经是多模波导,折射率一定程度的减少，对于该方向上的模斑大小没有太大影响。因此，模斑在第二方向上的扩大并不明显。但是，光在与第二方向垂直的第三方向上的扩大较为明显，从而使得光经过第二波导区120时，椭圆形模斑在第三方向上扩大变为与光纤300模斑尺寸相同的圆形模斑。其中，第三方向可以为与第一方向、第二方向都垂直的方向，以图2为例，第三方向可以为垂直于纸面的方向。
波导芯层100安装时，可以将第一波导区110背离第二波导区120的一端与硅光芯片200连接，然后将第二波导区120背离第一波导区110的一端与光纤300连接，光可以从硅光芯片200进入波导芯层100，然后再进入光纤300中，使得光在第一波导区110内可以实现在第二方向上的扩斑，在第二波导区120内可以实现沿第三方向的扩斑，最终使得经过波导芯层100后的模斑可以与光纤300的模斑匹配，实现通信。
另外，第一波导区110和第二波导区120都可以由光透明介质(如二氧化硅等)构成，从而起到引导和限制光传播路径的作用。两者的材质和尺寸都可以根据光纤300和硅光芯片200的模斑尺寸进行设置。波导芯层100可以通过薄膜沉积、光刻或刻蚀等方式加工成型，无需采用熔接的方式，可以实现大规模生产，成本低。并且，现有技术中光纤以及熔接的小模斑光纤都需要架设在V形槽中，而由于V型槽结构容差直接影响小模斑光纤纤芯位置其中心与光纤的中心以及硅光芯片的中心无法完全对齐，安装存在一定的误差，导致小模斑光纤与硅光芯片的对接面损耗大，对接后的通道均匀性差。而本申请实施例中的波导芯层100可以形成在平面或曲面上，其两端可以分别与光纤300和硅光芯片200连接，无需架设在V形槽上，安装时只要将波导芯层100的两端分别对准硅光芯片200和光纤300即可，可以实现精确对接，对接后的通道均匀性好。
进一步可选地，第一波导区110沿第三方向的尺寸与第二波导区120沿第三方向的尺寸相等，第一波导区110沿第三方向的尺寸可以认为是第一波导区110的高度，第二波导区120沿第三方向的尺寸可以认为第二波导区120的高度，即第一波导区110的高度可以与第二波导区120的高度相等，加工简单，成本低。
本实施例提供的波导芯层，通过设置沿第一方向依次连接的第一波导区以及第二波导区；且第一波导区及第二波导区均沿第一方向延伸；第一波导区背离第二波导区的一端用于与硅光芯片连接，第二波导区背离第一波导区的一端用于与光纤连接；第一波导区沿第 二方向的尺寸从背离第二波导区的一端向靠近第二波导区的一端增大；第二波导区的折射率从靠近第一波导区的一端向背离第一波导区的一端减小，使得光经过第一波导区及第二波导区可以由小模斑变换为与光纤匹配的大模斑，并通过将第一波导区和第二波导区分别与硅光芯片和光纤连接，可以实现波导芯层与硅光芯片的精确对接，减少了通信时的光损耗，提高了硅光器件及光通信设备的通道均匀性；另外由于波导芯层无需熔接到光纤上，减低了制造成本。
实施例二
本实施例是在实施例一的基础上对第二波导区120折射率变化的方式进行改进，其他结构也可以参考实施例一，在此不再赘述。图3为本申请波导芯层实施例二的整体结构示意图，在图3中，第一方向可以为图中的左右方向，第二方向可以为图中的上下方向，第三方向可以为垂直于纸面的方向。请参考图3，第二波导区120包括沿第一方向间隔设置的多个第二实心波导部123，多个第二实心波导部123中靠近第一波导区110的一个第二实心波导部123具有第二截面121，且第二截面121位于第二实心波导部123靠近第一波导区110的一端。
具体地，在实施例一中，第二波导部120的折射率变化是靠材质的变化进行改进，而本实施例中，第二波导区120折射率的变化是依靠结构来改变。第二波导区120可以包括多个第二实心波导部123，每个第二实心波导部123的材质可以相同，从而降低加工成本。可选地，第二实心波导部123与第一波导区110的材质也可以相同，进一步降低成本。
多个第二实心波导部123可以沿着第一方向间隔设置，可以理解，相邻两个第二实心波导部123之间的间隔内可以填充有其他介质，该介质可以是空气等折射率小于第二实心波导部123的光疏介质，介质及第二实心波导部123可以共同构成整个第二波导区120，光从第二实心波导部123进入该介质时会出现发散，可以将每个第二实心波导部123及其左侧的间隔作为一组单元，第二波导区120可以由多组单元从左到右依次排列，当光每穿过一组单元，其模斑便会扩大一点，最终与光纤300的模斑尺寸相等或者相近。
另外，整个第二波导区120的折射率变化可以依靠多个第二实心波导部123的排列来实现，具体地排列方式也可以有多种，例如，每个第二实心波导部123沿第一方向的长度可以由左向右逐渐减小，而相邻两个第二实心波导部123之间的间隔距离可以相等。
可选地，任意相邻两个第二实心波导部123之间的距离均不相等，即每个第二实心波导部123沿第一方向的长度都可以相等，而相邻两个第二实心波导部123之间的间隔距离可以不等，从而方便加工多个第二实心波导部123。为了方便描述，以第二波导区120具有6个第二实心波导部123进行说明，每个第二实心波导部123左侧都可以具有一个间隔，将6个间隔从左到右依次编号为间隔1、间隔2、间隔3、间隔4、间隔5、间隔6，间隔1和间隔2的距离相等，间隔3和间隔4的距离相等，间隔5和间隔6的距离相等，另外，间隔1的距离小于间隔3的距离，间隔3的距离小于间隔6的距离，从而实现第二波导区120折射率从左到右减小。
进一步可选地，相邻两个第二实心波导部123之间的距离由靠近第一波导区110的一端向背离第一波导区110的一端增大，即间隔1、间隔2、间隔3、间隔4、间隔5、间隔6的距离依次增大，扩斑效果好，并可以减小第二波导区120的沿第一方向的长度尺寸。
实施例三
本实施例是在实施例一或实施例二的基础上对第一波导区110的结构进行改进，其中，第二波导区120的结构可以参考实施例一或实施例二，在此不再赘述。图4为本申请波导芯层实施例三的整体结构示意图，在图4中，第一方向可以为图中的左右方向，第二方向可以为图中的上下方向，第三方向可以为垂直于纸面的方向。请参考图4，第一波导区110包括：沿第一方向依次设置的第一子波导区114和第二子波导区116；第二子波导区116背离第一子波导区114的一端与第二波导区120连接；第一子波导区114包括：沿第一方向从第一子波导区114的一端延伸至另一端的第一实心子波导部115；第二子波导区116包括沿第一方向间隔设置的多个第二实心子波导部117。
具体地，在实施例一或实施例二中，第一波导区110为从一端延伸到另一端的实体结构，而本实施例中，第一波导部110包括第一子波导区114和第二子波导区116，第一子波导区114可以为从一端延伸至另一端的第一实心子波导部115，第一实心子波导部115可以为由同种材料构成的实心结构。当光从硅光芯片200经过第一子波导区114后，其模斑可以在第二方向上扩大。
第二子波导区116设置在第一子波导区114和第二波导区120之间，第二子波导区116可以由间隔设置的多个第二实心子波导部117组成，第二实心子波导部117的材质可以与第一实心子波导部115的材质相等。可以理解，相邻两个第二实心子波导部117之间的间隔内可以填充有其他介质，该介质可以是空气等折射率小于第二实心子波导部117的光疏介质，介质及第二实心子波导部117可以共同构成整个第二子波导区116。当光经过第二子波导区116后，其模斑不仅可以在第二方向上进一步扩大，同时，模斑在第三方向上也有所扩大，因此，光经过第二波导区120后模斑所需要扩大的尺寸变小，进而可以缩短第二波导区120沿第一方向的长度，进而缩小整个波导芯层100的尺寸。
可选地，任意相邻两个第二实心子波导部117之间的距离不相等。即每个第二实心子波导部117沿第一方向的长度都可以相等，而相邻两个第二实心子波导部117之间的间隔距离可以不等，从而方便加工多个第二实心子波导部117。
进一步可选地，相邻两个第二实心子波导部117之间的距离由靠近第一实心子波导部115的一端向背离第一实心子波导部115的一端增大，扩斑效果好，并可以进一步减小第二波导区120的沿第一方向的长度尺寸。
本实施例中，第二实心子波导部117的材质和设置方式可以与实施例二中第二实心波导部123的材质和设置方式相同，具体可以参考实施例二。
实施例四
本实施例是在上述实施例的基础上对波导芯层100的结构进行改进，其中，第一波导区110和第二波导区120的结构可以参考上述实施例，在此不再赘述。图5为本申请波导芯层实施例四的整体结构示意图，在图5中，第一方向可以为图中的左右方向，第二方向可以为图中的上下方向，第三方向可以为垂直于纸面的方向。请参考图5，波导芯层100还包括第三波导区130，第一波导区110的第三截面112通过第三波导区130与硅光芯片200连接；以垂直于第三波导区130延伸方向的平面为横截面，第三波导区130任意位置 的横截面形状都相同。
具体地，在第一波导区110与硅光芯片200之间还设置有第三波导区130。第三波导区130可以为定截面结构，即以垂直于第三波导区130延伸方向的截面为横截面，第三波导区130的横截面尺寸和形状处处相等。第三波导区130的横截面形状也可以有多种，例如圆形、三角形等，可选地，第三波导区130的横截面形状可以为方形，从而可以通过沉积等工艺加工，制造方便。
由于光从硅光芯片200刚进入波导芯层100之时传输并不稳定，通过设置第三波导区130可以使得光在第三波导区130中逐渐稳定，然后再经过第一波导区110和第二波导区120进行扩斑，保证了信号传输的稳定性。
进一步地，第三波导区130靠近第一波导区110的一端具有第四截面131；第四截面131与第三截面112平行，且第三截面112与第一方向垂直设置；第三截面112沿第一方向在第四截面131上的投影与第四截面131重合，即第三截面112和第四截面131完全对接，使得光穿过第三截面112和第四截面131的损耗小，且第一波导区110、第二波导区120和第三波导区130可以在一次沉积和刻蚀过程中成型，无需分别加工，加工方便，成本低。
第三波导区130的延伸方向可以为直线结构也可以为曲线结构，当其为直线方向时，第三波导区130的延伸方向可以与第一方向重合，从而可以准确实现单根光纤300与硅光芯片200的对接。
图6为图5中第三波导区的另一结构示意图，请参考图6，第三波导区130的延伸方向可以为曲线方向。在实际通信过程中，为了传输大量的信号，通常需要将硅光芯片200与多个光纤300(即光纤阵列)对接，但是由于硅光芯片200中用于与光纤300连接的多个接口之间的距离较小，甚至可能小于光纤300的直径，因此，很难将光纤阵列与硅光芯片200的多个接口实现准确对接。而图6中通过采用多个波导芯层100实现硅光芯片200和光纤阵列对接，而每个波导芯层100中第三波导区130都可以沿曲线方向延伸从而可以保证每个光纤300与接口的准确对接，且对硅光芯片200多个接口之间的距离没有要求。
可以理解，每个波导芯层100中第三波导区130的延伸方向都可以为不同形状的曲线，位于中间的波导芯层100的第三波导区130可以沿直线延伸，具体可以根据光纤阵列的尺寸及硅光芯片200的尺寸进行设置。
实施例五
图7为本申请模斑转换器的整体结构示意图，请参考图7，本实施例提供一种模斑转换器400，包括：衬底层410、覆盖层420以及的波导芯层100；波导芯层100及覆盖层420设置在衬底层410上，且覆盖层420包覆波导芯层100。
具体地，本实施例中波导芯层100的结构功能可以与上述多个实施例的结构相同，具体可以参考上述实施例，在此不再赘述。
衬底层410可以为玻璃基板等结构，波导芯层100可以通过沉积等方式设置在玻璃基板的上表面，从而方便形成波导芯层100，当形成波导芯层100后，可以将覆盖层420以沉积等工艺形成在衬底层410和波导芯层100的上方，使得覆盖层420和衬底层410可以包覆波导芯层100。
衬底层410的材质可以与覆盖层420的材质相同，可选地，其还可以与填充在第二实心波导部123及填充在第二实心子波导部117的间隔中的介质材质相同，从而降低生产成本。另外，衬底层410和覆盖层420的折射率可以小于各个实心波导部或实心子波导部的折射率，从而共同起到限制和引导光传播的作用。通过设置衬底层410和覆盖层420，还可以起到保护和支撑波导芯层100的作用，并且方便安装。
进一步地，波导芯层100的数量为多个，多个波导芯层100沿第二方向间隔设置在衬底层上410，从而可以实现光纤阵列与硅光芯片200的对接，具体可以对参考图6的说明。
本实施例提供的模斑转换器，通过在波导芯层设置沿第一方向依次连接的第一波导区以及第二波导区；且第一波导区及第二波导区均沿第一方向延伸；第一波导区背离第二波导区的一端用于与硅光芯片连接，第二波导区背离第一波导区的一端用于与光纤连接；第一波导区沿第二方向的尺寸从背离第二波导区的一端向靠近第二波导区的一端增大；第二波导区的折射率从靠近第一波导区的一端向背离第一波导区的一端减小，使得光经过第一波导区及第二波导区可以由小模斑变换为与光纤匹配的大模斑，并通过将第一波导区和第二波导区分别与硅光芯片和光纤连接，可以实现波导芯层与硅光芯片的精确对接，减少了通信时的光损耗，提高了硅光器件及光通信设备的通道均匀性；另外由于波导芯层无需熔接到光纤上，减低了制造成本。
实施例六
图8为本申请硅光器件实施例一的整体结构示意图，请参考图8，本实施例提供一种硅光器件，包括硅光芯片200、光纤300以及的模斑转换器400；模斑转换器400连接在硅光芯片200与光纤300之间。
具体地，硅光芯片200和光纤300可以为能够实现光通信的结构。模斑转换器400可以与实施例五中的结构和功能相同，具体可以参考实施例五，在此不再赘述。
可以理解，当模斑转换器400只包括第一波导区110和第二波导区120时，模斑转换器400的第一波导区110与硅光芯片200连接；而当模斑转换器400包括第三波导区130、第一波导区110和第二波导区120时，第一波导区110可以通过第三波导区130与硅光芯片200连接。模斑转换器400的第二波导区120与光纤300连接。
进一步地，硅光芯片200包括基板210以及设置于基板210上的硅光芯片本体220，硅光芯片本体220与模斑转换器400的波导芯层100连接。
具体地，基板210可以为玻璃基板等用于支撑作用的结构，硅光芯片本体220可以形成在基板210上，从而方便制造，硅光芯片本体220可以为硅光芯片200实现通信的主体结构。硅光芯片本体220的波导输入端或波导输出端与波导芯层100连接，当硅光芯片200作为信号发射装置时，硅光芯片本体220的波导输出端与波导芯层100连接，当硅光芯片200作为信号接收装置，硅光芯片本体220的波导输入端与波导芯层100连接。
更进一步，硅光器件还包括盖板500，盖板500包括第一连接面510和与第一连接面510连接的第二连接面520，第一连接面510与第二连接面520相互垂直，且第一连接面510与衬底层410沿第一方向的端面411固定连接，第二连接面510与硅光芯片本体220背离基板210的顶面221固定连接。
具体地，第一方向可以为图8中的左右方向，盖板500可以为长方体结构，其可以具 有相邻的第一连接面510和第二连接面520，第一连接面510可以与衬底层410的端面411固定连接，第二连接面520可以与硅光芯片本体220的顶面221固定连接，从而可以将模斑转换器400以衬底层410在上，覆盖层420在下方的方式倒装在硅光芯片200与光纤300之间。
可以理解，由于硅光芯片200形成工艺的原因，在硅光芯片200用于连接模斑转换器400的表面上会存在工艺凸起211，当模斑转换器400以覆盖层420在上，衬底层410在下方的方式正常安装在硅光芯片200与光纤300之间，衬底层410会抵靠在工艺凸起211外，使得波导芯层100与硅光芯片本体220之间存在间隙，光传输容易出现损耗。由于覆盖层420只起到包覆作用，而衬底层410需要起到支撑作用，所以覆盖层420厚度小于衬底层410厚度，而本实施例通过盖板500将模斑转换器400以倒装的形式安装在硅光芯片200与光纤300之间，使得厚度较小的覆盖层420位于下方，安装时，覆盖层420与工艺凸起211之间不存在干涉，即波导芯层100可以与硅光芯片本体220实现无缝连接，减小了光传输的损耗。
更进一步，作为第一连接面510与的端面411的可选地固定方式，第一连接面510与衬底层410的端面411胶接；同时，第二连接面520可以与硅光芯片本体220的顶面221胶接，安装方便容易实现。
本实施例提供的硅光器件，通过在波导芯层设置沿第一方向依次连接的第一波导区以及第二波导区；且第一波导区及第二波导区均沿第一方向延伸；第一波导区背离第二波导区的一端用于与硅光芯片连接，第二波导区背离第一波导区的一端用于与光纤连接；第一波导区沿第二方向的尺寸从背离第二波导区的一端向靠近第二波导区的一端增大；第二波导区的折射率从靠近第一波导区的一端向背离第一波导区的一端减小，使得光经过第一波导区及第二波导区可以由小模斑变换为与光纤匹配的大模斑，并通过将第一波导区和第二波导区分别与硅光芯片和光纤连接，可以实现波导芯层与硅光芯片的精确对接，减少了通信时的光损耗，提高了硅光器件及光通信设备的通道均匀性；另外由于波导芯层无需熔接到光纤上，减低了制造成本。
图9为本申请硅光器件实施例二的整体结构示意图，请参考图9，作为盖板500的另一种实现方式，衬底层410与盖板500可以为一体成型的一体件。即第一连接面510和端面411可以融合在一起，从而减少加工及安装步骤，提高硅光器件的组装效率。
实施例七
本实施例提供一种光通信设备，包括通信装置以及的硅光器件，硅光器件与通信装置通信连接。
具体地，硅光器件的结构和功能与实施例六相同，具体可以参考实施例六，在此不再赘述。通信装置可以为路由器、服务器等常见的装置，在此不做具体限定。
本实施例提供的光通信设备，通过在波导芯层设置沿第一方向依次连接的第一波导区以及第二波导区；且第一波导区及第二波导区均沿第一方向延伸；第一波导区背离第二波导区的一端用于与硅光芯片连接，第二波导区背离第一波导区的一端用于与光纤连接；第一波导区沿第二方向的尺寸从背离第二波导区的一端向靠近第二波导区的一端增大；第二波导区的折射率从靠近第一波导区的一端向背离第一波导区的一端减小，使得光经过第一 波导区及第二波导区可以由小模斑变换为与光纤匹配的大模斑，并通过将第一波导区和第二波导区分别与硅光芯片和光纤连接，可以实现波导芯层与硅光芯片的精确对接，减少了通信时的光损耗，提高了硅光器件及光通信设备的通道均匀性；另外由于波导芯层无需熔接到光纤上，减低了制造成本。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”"仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接或彼此可通信；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在以上描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
最后应说明的是：以上各实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述各实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。

Claims (23)

  1. 一种波导芯层，其特征在于，包括：沿第一方向依次连接的第一波导区以及第二波导区；且所述第一波导区及所述第二波导区均沿所述第一方向延伸；
    所述第一波导区背离所述第二波导区的一端用于与硅光芯片连接，所述第二波导区背离所述第一波导区的一端用于与光纤连接；
    所述第一波导区沿第二方向的尺寸从背离所述第二波导区的一端向靠近所述第二波导区的一端增大；
    所述第二波导区的折射率从靠近所述第一波导区的一端向背离所述第一波导区的一端减小；
    其中，所述第二方向与所述第一方向垂直。
  2. 根据权利要求1所述的波导芯层，其特征在于，
    所述第一波导区靠近所述第二波导区的一端具有第一截面；
    所述第二波导区靠近所述第一波导区的一端具有第二截面；
    所述第一截面与所述第二截面平行，且所述第一截面与所述第一方向垂直设置；
    所述第一截面沿所述第一方向在所述第二截面上的投影与所述第二截面重合。
  3. 根据权利要求2所述的波导芯层，其特征在于，所述第二波导区的任意位置沿所述第二方向的尺寸都相等。
  4. 根据权利要求3所述的波导芯层，其特征在于，所述第一波导区沿第三方向的尺寸与所述第二波导区沿所述第三方向的尺寸相等，其中，所述第三方向与所述第二方向垂直，且所述第三方向还与所述第一方向垂直。
  5. 根据权利要求4所述的波导芯层，其特征在于，所述第一波导区背离所述第二波导区的一端具有第三截面，所述第一截面沿所述第二方向的尺寸是所述第三截面沿所述第二方向的尺寸的2-5倍。
  6. 根据权利要求2-5任一项所述的波导芯层，其特征在于，
    所述第二波导区包括：沿所述第一方向从所述第二波导区的一端延伸至另一端的第一实心波导部；所述第一实心波导部靠近所述第一波导区的一端具有所述第二截面；
    所述第一实心波导部的折射率由靠近所述第一波导区的一端向背离所述第一波导区的一端减小。
  7. 根据权利要求2-5任一项所述的波导芯层，其特征在于，所述第二波导区包括沿所述第一方向间隔设置的多个第二实心波导部，多个所述第二实心波导部中靠近所述第一波导区的一个所述第二实心波导部具有所述第二截面，且所述第二截面位于所述第二实心波导部靠近所述第一波导区的一端。
  8. 根据权利要求7所述的波导芯层，其特征在于，任意相邻两个所述第二实心波导部之间的距离均不相等。
  9. 根据权利要求8所述的波导芯层，其特征在于，相邻两个所述第二实心波导部之间的距离由靠近所述第一波导区的一端向背离所述第一波导区的一端增大。
  10. 根据权利要求1-9任一项所述的波导芯层，其特征在于，所述第一波导区包括：沿所述第一方向从所述第一波导区的一端延伸至另一端的第三实心波导部。
  11. 根据权利要求1-9任一项所述的波导芯层，其特征在于，所述第一波导区包括： 沿所述第一方向依次设置的第一子波导区和第二子波导区；所述第二子波导区背离所述第一子波导区的一端与所述第二波导区连接；
    所述第一子波导区包括：沿所述第一方向从所述第一子波导区的一端延伸至另一端的第一实心子波导部；
    所述第二子波导区包括沿所述第一方向间隔设置的多个第二实心子波导部。
  12. 根据权利要求11所述的波导芯层，其特征在于，任意相邻两个所述第二实心子波导部之间的距离不相等。
  13. 根据权利要求12所述的波导芯层，其特征在于，相邻两个所述第二实心子波导部之间的距离由靠近所述第一实心子波导部的一端向背离所述第一实心子波导部的一端增大。
  14. 根据权利要求1-13任一项所述的波导芯层，其特征在于，所述波导芯层还包括第三波导区，所述第一波导区通过所述第三波导区与所述硅光芯片连接；以垂直于所述第三波导区延伸方向的平面为横截面，所述第三波导区任意位置的所述横截面形状都相同。
  15. 根据权利要求14所述的波导芯层，其特征在于，所述第三波导区的延伸方向与所述第一方向重合。
  16. 根据权利要求14所述的波导芯层，其特征在于，所述第三波导区的延伸方向为曲线方向。
  17. 一种模斑转换器，其特征在于，包括：衬底层、覆盖层以及权利要求1-16任一项所述的波导芯层；
    所述波导芯层及所述覆盖层设置在所述衬底层上，且所述覆盖层包覆所述波导芯层。
  18. 根据权利要求17所述的模斑转换器，其特征在于，所述波导芯层的数量为多个，多个所述波导芯层沿所述第二方向间隔设置在所述衬底层上。
  19. 一种硅光器件，其特征在于，包括硅光芯片、光纤以及权利要求17或18所述的模斑转换器；
    所述模斑转换器连接在所述硅光芯片与所述光纤之间。
  20. 根据权利要求19所述的硅光器件，其特征在于，所述硅光芯片包括基板以及设置于所述基板上的硅光芯片本体，所述硅光芯片本体与所述模斑转换器的所述波导芯层连接。
  21. 根据权利要求20所述的硅光器件，其特征在于，所述硅光器件还包括盖板，所述盖板包括第一连接面和与所述第一连接面连接的第二连接面，所述第一连接面与所述第二连接面相互垂直，且所述第一连接面与所述衬底层沿所述第一方向的端面固定连接，所述第二连接面与所述硅光芯片本体背离所述基板的顶面固定连接。
  22. 根据权利要求21所述的硅光器件，其特征在于，所述衬底层与所述盖板为一体成型的一体件。
  23. 一种光通信设备，其特征在于，包括通信装置以及权利要求19-22任一项所述的硅光器件，所述硅光器件与所述通信装置通信连接。
PCT/CN2019/117146 2018-12-29 2019-11-11 波导芯层、模斑转换器、硅光器件及光通信设备 WO2020134651A1 (zh)

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