WO2020134163A1 - 一种量子点发光二极管及其制备方法 - Google Patents

一种量子点发光二极管及其制备方法 Download PDF

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WO2020134163A1
WO2020134163A1 PCT/CN2019/104013 CN2019104013W WO2020134163A1 WO 2020134163 A1 WO2020134163 A1 WO 2020134163A1 CN 2019104013 W CN2019104013 W CN 2019104013W WO 2020134163 A1 WO2020134163 A1 WO 2020134163A1
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quantum dot
dot light
layer
emitting
electron blocking
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PCT/CN2019/104013
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French (fr)
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聂志文
杨一行
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Tcl科技集团股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H10K50/181—Electron blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

Definitions

  • the present disclosure relates to the field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method thereof.
  • the quantum dot light-emitting diode is a typical sandwich structure, which is composed of electrodes, functional layers, and light-emitting layers. Under the excitation of the applied voltage, the carriers enter the quantum dots from the functional layers through the electrodes at both ends to recombine to form excitons. The recombined excitons release photons in the form of radiation transitions, thereby emitting light. Because colloidal quantum dots have the characteristics of high luminous efficiency, high color purity, wide color gamut, and good stability, QLED not only inherits these excellent properties of quantum dots, but also has self-luminous, wide viewing angle, flexible, etc. Features, showing great commercial application prospects, have become an important research direction in the field of new generation of new and lighting display.
  • the quantum dot itself is processed and prepared by the solution method, it is very suitable for configuration as an ink, and then printing, inkjet and other methods are used to achieve large-scale and large-area preparation.
  • QLED devices have developed rapidly and achieved remarkable results.
  • the alloying of the quantum dot and the growth of the thick shell layer have greatly promoted the performance of QLED devices.
  • semiconductor quantum dots generally have a deep HOMO energy level, and there is a large potential barrier for charge transport in each functional layer, resulting in an imbalance between electron and hole injection during device operation.
  • a high carrier injection barrier will increase the operating voltage of the device; on the other hand, unbalanced charge injection will greatly reduce the recombination probability of carriers in the light-emitting layer, and easily lead to non-radiative transitions of excitons , Thereby affecting the luminous efficiency and life of the device.
  • the purpose of the present disclosure is to provide a quantum dot light emitting diode and a preparation method thereof, aiming to solve the recombination probability of carriers in the light emitting layer caused by the imbalance of carrier injection in the existing QLED device The problem of reducing the luminous efficiency and life of the device is reduced.
  • a quantum dot light-emitting diode includes a cathode, an anode, and a light-emitting layer disposed between the cathode and the anode, wherein the light-emitting layer includes n-layer quantum dot light-emitting layers stacked, and the two adjacent quantum dots emit light
  • An electron blocking material layer is provided between the layers, and the number of layers of the electron blocking material layer is n-1, where n is an integer greater than or equal to 2.
  • a preparation method of quantum dot light-emitting diode which includes the following steps:
  • a light-emitting layer is prepared on the substrate.
  • the light-emitting layer includes n stacked quantum dot light-emitting layers, and an electron blocking material layer is provided between the two adjacent quantum dot light-emitting layers.
  • the number of layers is n-1, where n is an integer greater than or equal to 2.
  • the quantum dot light-emitting diode provided by the present disclosure includes a light-emitting layer disposed between a cathode and an anode, the light-emitting layer includes n layers of quantum dot light-emitting layers stacked, and one of the two adjacent quantum dot light-emitting layers An electron blocking material layer is provided between, where n is an integer greater than or equal to 2.
  • the quantum dot light emitting diode of the present disclosure can effectively balance the injection rate of electrons and holes through the arrangement of the light emitting layer, thereby improving the recombination efficiency of carriers in the quantum dot light emitting layer, thereby improving the luminous efficiency and stability of the quantum dot light emitting diode Sex and service life.
  • FIG. 1 is a schematic structural diagram of a preferred embodiment of a quantum dot light emitting diode of the present disclosure.
  • FIG. 2 is a schematic diagram of the energy band structure of the quantum dot light emitting diode of the present disclosure.
  • FIG. 3 is a flowchart of a preferred embodiment of a method for manufacturing a quantum dot light emitting diode of the present disclosure.
  • the present disclosure provides a quantum dot light emitting diode and a preparation method thereof.
  • the present disclosure will be described in further detail below. It should be understood that the specific embodiments described herein are only used to explain the present disclosure and are not intended to limit the present disclosure.
  • the present disclosure provides a quantum dot light-emitting diode, which includes a cathode, an anode, and a light-emitting layer disposed between the cathodes, the light-emitting layer includes n-layer quantum dot light-emitting layers stacked, and the two adjacent quantum dots emit light
  • An electron blocking material layer is provided between the layers, and the number of layers of the electron blocking material layer is n-1, where n is an integer greater than or equal to 2.
  • the material layer can effectively reduce the electron transmission rate, thereby balancing the injection rate of electrons and holes, so as to improve the recombination efficiency of carriers in the quantum dot light-emitting layer, thereby improving the luminous efficiency, stability and service life of the quantum dot light-emitting diode .
  • the material of the electron blocking material layer is selected from one or more of PVK, Poly-TPD, NPB, TCTA, TAPC, CBP, TFB, and DNA, but is not limited thereto.
  • the material of the electron blocking material layer is selected from one or more of compound-doped PVK, Poly-TPD, NPB, TCTA, TAPC, CBP, TFB, and DNA, and the compound is selected from One of Li-TFSI, NiO, CuSCN, MoO 3 , CuO, V 2 O 5 or CuS, but is not limited thereto.
  • the HOMO energy level of the material in the electron blocking material layer is -5.0 to -8.0 eV
  • the LUMO energy level of the electron blocking material layer is -2.0 to -5.0 eV.
  • the present disclosure further provides a quantum dot light-emitting diode with a positive structure as shown in FIG. 1, the quantum dot light-emitting diode with a positive structure includes a substrate 10, an anode 20, and A hole transport layer 30, a light-emitting layer, an electron transport layer 50, and a cathode 60.
  • the light-emitting layer includes n-layer quantum dot light-emitting layers 41 stacked and n-1 is disposed between the two adjacent quantum dot light-emitting layers.
  • An electron blocking material layer 42 where n is an integer greater than or equal to 3, and in the n-1 electron blocking material layer, between two adjacent electron blocking material layers, the electron blocking material layer material near the cathode.
  • n is an integer greater than or equal to 3
  • the HOMO energy level and LUMO energy level are greater than the HOMO energy level and LUMO energy level of the electron blocking material layer material near the anode.
  • the quantum dot light emitting diode of this embodiment can effectively balance the injection rate of electrons and holes through the arrangement of the light emitting layer, thereby improving the recombination efficiency of carriers in the quantum dot light emitting layer, thereby improving the luminous efficiency of the quantum dot light emitting diode, Stability and service life.
  • the mechanism for achieving the above effect is as follows:
  • the light-emitting layer in the quantum dot light-emitting diode described in this embodiment includes an n-layer quantum dot light-emitting layer stacked and an electron blocking material layer disposed between adjacent quantum dot light-emitting layers, and two adjacent electron blocking material layers In between, the HOMO energy level and LUMO energy level of the electron blocking material layer material close to the cathode are both greater than the HOMO energy level and LUMO energy level of the electron blocking material layer material close to the anode. As shown in FIG. 2, the LUMO energy level of the electron blocking material layer is higher than the LUMO energy level of the quantum dot light emitting layer.
  • the electrons When electrons are transferred from the cathode to each quantum dot light emitting layer, the electrons need to be tunneled first Through the electron blocking material layer with the largest LUMO energy level, the electron barrier that needs to be overcome is the largest at this time; then the electron blocking material layer with successively reduced LUMO energy levels is tunneled to the corresponding quantum dot light-emitting layer, in the subsequent tunneling process In the case of electrons, the barrier of a larger energy level still needs to be overcome, and the transmission rate of the electrons in each electron blocking material layer shows a slowing trend; since the HOMO energy levels of the electron blocking material layers are less than those of the quantum dot light-emitting layer HOMO level, when holes are transported from the anode to the quantum dot light-emitting layer, when the hole tunnels through the deepest quantum dot light-emitting layer of the HOMO level, the potential barrier to be overcome is the largest.
  • the amount of hole accumulation is relatively small; as the HOMO energy level of the electron blocking material layer in the quantum dot light emitting layer becomes deeper stepwise, the potential barrier to be overcome when holes tunnel through the corresponding electron blocking material layer is getting smaller and smaller Therefore, with the further transmission of holes, the transmission rate of holes is increasing.
  • the quantum dot light emitting diode of the present disclosure can effectively balance the injection rate of electrons and holes through the arrangement of the light emitting layer, thereby improving the recombination efficiency of carriers in the quantum dot light emitting layer, thereby improving the luminous efficiency and stability of the quantum dot light emitting diode Sex and service life.
  • the number of quantum dot light-emitting layers is 3-11, that is, the number of electron blocking material layers is 2-10.
  • the number of layers of the electron blocking material layer is 2-5.
  • the thickness of each electron blocking material layer is 2-5 nm.
  • the electron blocking material layer material has a HOMO energy level of -5.0 to -8.0 eV, and the electron blocking material layer material has a LUMO energy level of -2.0 to -5.0 eV.
  • the HOMO energy level and the LUMO energy level of the electron blocking material layer material near the cathode are both greater than
  • the HOMO energy level and the LUMO energy level of the electron blocking material layer material near the anode, and the HOMO energy level of the adjacent electron blocking material layer material are different from -0.1 ⁇ -0.5eV, and the LUMO energy level of the adjacent electron blocking material layer material is different. It is -0.1 ⁇ -0.5eV.
  • the electron blocking material layer material is selected from one or more of PVK, Poly-TPD, NPB, TCTA, TAPC, CBP, TFB, and DNA, but is not limited thereto.
  • the material of the electron blocking material layer is selected from one or more of compound-doped PVK, Poly-TPD, NPB, TCTA, TAPC, CBP, TFB, and DNA, and the compound is selected from One of Li-TFSI, NiO, CuSCN, MoO 3 , CuO, V 2 O 5 or CuS, but is not limited thereto.
  • the purpose of selecting compound-doped electron blocking materials is mainly to adjust the HOMO and LUMO energy levels of the electron blocking material layer materials, to achieve a stepped barrier between level energy levels, thereby adjusting the electron and hole transport rates, and improving the exciton Compound efficiency.
  • the material of the electron blocking material layer is selected from PVK:Li-TFSI, PVK:NiO, PVK:CuSCN, PVK:MoO 3 , PVK:CuO, PVK:V 2 O 5 , PVK:CuS, Poly-TPD, Poly-TPD: Li-TFSI, Poly-TPD: -NiO, Poly-TPD: CuSCN, Poly-TPD: MoO 3 , Poly-TPD: CuO, Poly-TPD: V 2 O 5 , Poly-TPD: CuS, NPB , NPB: Li-TFSI, NPB-TPD: -NiO, NPB-TPD: CuSCN, NPB: MoO 3 , NPB: CuO, NPB: V 2 O 5 , NPB: CuS, TCTA, TCTA: Li-TFSI, TCTA- TPD:-NiO, TCTA-TPD:CuSCN, TCTA:MoO 3 , TC
  • the thickness of the quantum dot light-emitting layer near the cathode is greater than the thickness of the adjacent quantum dot light-emitting layer.
  • the thickness of the quantum dot light-emitting layer near the cathode is larger than the thickness of the quantum dot light-emitting layer near.
  • the difference in thickness between the two adjacent quantum dot light-emitting layers is 5-20 nm.
  • the thickness of the quantum dot light-emitting layer closest to the anode is 1-10 nm, and the thickness of the quantum dot light-emitting layer closest to the cathode is 10-40 nm.
  • the quantum dot light-emitting layer material is selected from one or more of group II-VI compounds, group III-V compounds, and group I-III-VI compounds, but is not limited thereto.
  • the group II-VI compound is selected from CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS; CdZnSeS, CdZnSeTe and CdZnSTe
  • the group III-V compound is selected from one or more of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP
  • the I -Group III-VI compounds are selected from one or more of InP, In
  • the anode material is selected from one or more of Li, Ca, Ba, LiF, CsN 3 , Cs 2 CO 3 , CsF, Ag, Mo, Al, Cu, and Au, but is not limited to this.
  • the thickness of the anode is 20-150 nm.
  • the hole transport layer material is selected from TFB, PVK, Poly-TBP, Poly-TPD, NPB, TCTA, TAPC, CBP, PEODT: PSS, MoO 3 , WoO 3 , NiO, CuO, V One or more of 2 O 5 and CuS, but not limited thereto.
  • the hole transport layer has a thickness of 30-100 nm.
  • the electron transport layer material is selected from one or more of ZnO, TiO 2, Alq 3 , SnO, ZrO, AlZnO, ZnSnO, BCP, TAZ, PBD, TPBI, Bphen, and CsCO 3 , But it is not limited to this.
  • the thickness of the electron transport layer is 10-120 nm.
  • the cathode material is selected from one of ITO, FTO, or ZTO. In some embodiments, the thickness of the cathode is 60-130 nm.
  • the quantum dot light emitting diode of the present disclosure may further include one or more of the following functional layers: a hole injection layer disposed between the anode and the hole transport layer, and disposed between the cathode and the electron transport layer Electron injection layer.
  • Embodiments of the present disclosure also provide a method for manufacturing a quantum dot light emitting diode, as shown in FIG. 3, including the steps of:
  • the light-emitting layer includes n-layer quantum dot light-emitting layers stacked.
  • An electron blocking material layer is provided between the two adjacent quantum dot light-emitting layers.
  • the electron blocking material The number of layers is n-1, where n is an integer greater than or equal to 2.
  • the substrate is an anode substrate.
  • the anode substrate may include a base and an anode stacked on the surface of the base; in still other embodiments of the present disclosure, the The anode substrate may include a base, an anode stacked on the surface of the base, and a hole injection layer stacked on the surface of the anode; in yet other embodiments of the present disclosure, the substrate may include a base, an anode stacked on the surface of the base 1.
  • the substrate may include a base, an anode stacked on the surface of the base, a hole injection layer stacked on the surface of the anode, and a stack The hole transport layer provided on the surface of the hole injection layer.
  • the anode substrate may include a base, an anode stacked on the surface of the base, a hole injection layer stacked on the surface of the anode, and a hole transport layer stacked on the surface of the hole injection layer The layer and the electron blocking layer provided on the surface of the hole transport layer are stacked.
  • the substrate is a cathode substrate.
  • the cathode substrate includes a base and a cathode stacked on the surface of the base; in some embodiments of the present disclosure, the second The substrate includes a base, a cathode stacked on the surface of the base, and an electron injection layer stacked on the surface of the cathode.
  • the second substrate includes a base, a cathode stacked on the surface of the base, an electron injection layer stacked on the surface of the cathode, and an electron transport layer stacked on the surface of the electron injection layer; In some embodiments, the second substrate includes a base, a cathode stacked on the surface of the base, and an electron injection layer stacked on the surface of the cathode, an electron transport layer stacked on the surface of the electron injection layer, and a layer stacked on the electron transport layer Hole blocking layer on the surface.
  • Embodiments of the present disclosure also provide an example of a method for manufacturing a quantum dot light-emitting diode with a formal structure as shown in FIG. 1, specifically including the following steps:
  • n is an integer greater than or equal to 3, and in the n-1 electron blocking material layer, between two adjacent electron blocking material layers, the HOMO energy level of the electron blocking material layer material near the cathode and The LUMO energy level is greater than the HOMO energy level and LUMO energy level of the electron blocking material layer material near the anode.
  • each layer preparation method may be a chemical method or a physical method, wherein the chemical method includes but is not limited to one of chemical vapor deposition method, continuous ion layer adsorption and reaction method, anodizing method, electrolytic deposition method, and co-precipitation method One or more; physical methods include but are not limited to solution methods (such as spin coating method, printing method, blade coating method, dipping and pulling method, dipping method, spraying method, roll coating method, casting method, slit coating method) Or strip coating method, etc.), evaporation method (such as thermal evaporation method, electron beam evaporation method, magnetron sputtering method or multi-arc ion coating method, etc.), deposition method (such as physical vapor deposition method, atomic layer One or more of deposition method, pulsed laser deposition method, etc.).
  • solution methods such as spin coating method, printing method, blade coating method, dipping and pulling method, dipping method, spraying method, roll coating method, casting method, slit coating method
  • a quantum dot light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, which are arranged in layers from bottom to top, and the light-emitting layer includes 6 layers of quantum
  • the anode is ITO, the thickness is 100nm;
  • the hole injection The material of the layer is PEDOT:PSS with a thickness of 40nm;
  • the material of the hole transport layer is TFB
  • a quantum dot light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, which are arranged in layers from bottom to top, and the light-emitting layer includes 6 layers of quantum
  • the anode is ITO with a thickness of 100nm;
  • the hole injection The material of the layer is PEDOT:PSS with a thickness of 40nm;
  • the material of the hole transport layer is TFB
  • a quantum dot light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, which are arranged in layers from bottom to top, and the light-emitting layer includes 6 layers of quantum
  • the dot light-emitting layer and the electron blocking material layer provided between the adjacent quantum dot light-emitting layers, along the direction of the anode to the cathode, the material of each electron blocking material layer is TCTA in sequence, doped with 1.5wt.% MoO 3 TCTA, TCTA doped with 3wt.% MoO 3 , TCTA with 4.5wt.% MoO 3 , and TCTA with 6wt.% MoO 3 ;
  • the anode is ITO with a thickness of 100nm;
  • the hole injection layer material is PEDOT : PSS, thickness 40nm;
  • the hole transport layer material is TFB, thickness 80n
  • a quantum dot light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, which are arranged in layers from bottom to top, and the light-emitting layer includes 6 layers of quantum
  • the anode is ITO, the thickness is 100nm;
  • the hole injection The layer material is PEDOT:PSS with a thickness of 40nm;
  • the hole transport layer material is TFB with a thickness
  • a quantum dot light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, which are arranged in layers from bottom to top, and the light-emitting layer includes 6 layers of quantum
  • the dot light-emitting layer and the electron blocking material layer provided between the adjacent quantum dot light-emitting layers, along the direction of the anode to the cathode, the material of each electron blocking material layer is TFB in sequence, doped with 1.5wt.% Li- TFSI TFB, TFB doped with 3wt.% Li-TFSI, TFB 4.5wt.% Li-TFSI, and TFB 6wt.% Li-TFSI;
  • the anode is ITO with a thickness of 100nm;
  • the hole injection The layer material is PEDOT:PSS with a thickness of 40nm;
  • the hole transport layer material is TFB with a
  • a quantum dot light-emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode, which are arranged in layers from bottom to top, and the light-emitting layer includes 6 layers of quantum
  • the dot light-emitting layer and the electron blocking material layer provided between the adjacent quantum dot light-emitting layers, along the direction of the anode to the cathode, the material of each electron blocking material layer is TCTA in sequence, doped with 1.5wt.% MoO 3 TCTA, TCTA doped with 3wt.% MoO 3 , TCTA with 4.5wt.% MoO 3 , and TCTA with 6wt.% MoO 3 ;
  • the anode is ITO with a thickness of 100nm;
  • the hole injection layer material is PEDOT : PSS, thickness 40nm;
  • the hole transport layer material is TFB, thickness 80n
  • the quantum dot light emitting diode includes a light emitting layer disposed between a cathode and an anode, the light emitting layer includes n stacked quantum dot light emitting layers, and the two adjacent quantum dots emit light There are n-1 electron blocking material layers between the layers, where n is an integer greater than or equal to 3, and in the n-1 electron blocking material layer, between two adjacent electron blocking material layers, close to each other
  • the HOMO energy level and LUMO energy level of the electron blocking material layer material of the cathode are both greater than the HOMO energy level and LUMO energy level of the electron blocking material layer material close to the anode.
  • the electron blocking material layer with a stepped energy level structure in the present disclosure helps to reduce the hole injection barrier, thereby helping to increase hole transport performance, and the electron blocking material layer with a stepped energy level structure is also beneficial to Slow down the electron transport performance; that is to say, the quantum dot light emitting diode can effectively balance the injection rate of electrons and holes through the setting of the light emitting layer, thereby improving the recombination efficiency of carriers in the quantum dot light emitting layer, and Improve the luminous efficiency, stability and service life of quantum dot light-emitting diodes.

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Abstract

公开一种量子点发光二极管及其制备方法，所述量子点发光二极管包括阴极、阳极以及设置在阴极和阳极之间的发光层，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有n-1层电子阻挡材料层，其中，n为大于等于2的整数。本公开量子点发光二极管通过所述发光层的设置能够有效平衡电子和空穴的注入速率，从而提高载流子在量子点发光层中的复合效率，进而提高量子点发光二极管的发光效率、稳定性和使用寿命。

Description

一种量子点发光二极管及其制备方法 技术领域
本公开涉及量子点领域，尤其涉及一种量子点发光二极管及其制备方法。
背景技术
量子点发光二极管(QLED)为典型的三明治结构，由电极，功能层，发光层等构成。在外加电压的激发下，载流子通过两端电极由各功能层进入到量子点进行复合形成激子，复合后的激子通过辐射跃迁的形式释放光子，从而发光。由于胶体量子点自身具有发光效率高、色纯度高、色域广、稳定性好等特性，QLED不仅承袭了量子点的这些优异的性能，而且QLED还具有自发光、可视角广、可弯曲等特点，表现出极大的商业应用前景，成为新一代新型与照明显示领域的重要研究方向。同时，由于量子点本身是采用溶液法加工制备，非常适合配置成油墨，然后采用印刷、喷墨等方式实现大规模、大面积化制备。目前，经过二十多年的研究与发展，QLED器件得到了迅速发展，并取得了显著的成果。特别是近年来由对功能层的调控转至对量子点自身的调控，对量子点进行合金化和厚壳层的生长极大的推动了QLED器件性能的提升。
现阶段，对于QLED器件而言，如何同步提升器件效率、寿命和稳定性，仍然是一个极具挑战性的难题。通常，半导体量子点普遍具有很深的HOMO能级，电荷在各功能层传输时存在较大的势垒，导致器件在工作时电子和空穴注入不平衡。一方面，高的载流子注入势垒会增加器件的工作电压；另一方面，不平衡的电荷注入会使得载流子在发光层内的复合几率大大降低，容易引发激子的非辐射跃迁，从而影响了器件的发光效率和寿命。
因此，现有技术还有待于改进和发展。
发明内容
鉴于上述现有技术的不足，本公开的目的在于提供一种量子点发光二极管及其制备方法，旨在解决现有QLED器件中载流子注入不平衡导致载流子在发光层内的复合几率降低，影响了器件的发光效率和寿命的问题。
本公开的技术方案如下：
一种量子点发光二极管，包括阴极、阳极以及设置在阴极和阳极之间的发光层，其中，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有电子阻挡材料层，电子阻挡材料层的层数为n-1，其中，n为大于等于2的整数。
一种量子点发光二极管的制备方法，其中，包括如下步骤：
提供基板；
在所述基板制备发光层，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有电子阻挡材料层，所述电子阻挡材料层的层数为n-1，其中，n为大于等于2的整数。
有益效果：本公开提供的量子点发光二极管包括设置在阴极和阳极之间的发光层，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置电子阻挡材料层，其中，n为大于等于2的整数。本公开量子点发光二极管通过所述发光层的设置能够有效平衡电子和空穴的注入速率，从而提高载流子在量子点发光层中的复合效率，进而提高量子点发光二极管的发光效率、稳定性和使用寿命。
附图说明
图1为本公开一种量子点发光二极管较佳实施例的结构示意图。
图2为本公开量子点发光二极管的能带结构示意图。
图3为本公开一种量子点发光二极管的制备方法较佳实施例的流程图。
具体实施方式
本公开提供一种量子点发光二极管及其制备方法，为使本公开的目的、技术方案及效果更加清楚、明确，以下对本公开进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本公开，并不用于限定本公开。
本公开提供一种量子点发光二极管，其包括阴极、阳极以及设置在阴极之间的发光层，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有电子阻挡材料层，所述电子阻挡材料层的层数为n-1，其中， n为大于等于2的整数。
对于量子点发光二极管而言，电子从阴极传输至量子点发光层的过程中，电子在各传输层的LUMO能级越深，电子传输时的势垒越大，电子隧穿过该传输层时所需要的能量越高，导致电子传输速率越慢，由于电子阻挡材料层的LUMO能级通常大于量子点发光层的LUMO能级，本实施例通过在相邻量子点发光层之间设置电子阻挡材料层能够有效降低电子的传输速率，从而平衡电子和空穴的注入速率，以提高载流子在量子点发光层中的复合效率，进而提高量子点发光二极管的发光效率、稳定性和使用寿命。
在一些实施方式中，所述电子阻挡材料层的材料选自PVK、Poly-TPD、NPB、TCTA、TAPC、CBP、TFB和DNA中的一种或多种，但不限于此。
在一些实施方式中，所述电子阻挡材料层的材料选自化合物掺杂的PVK、Poly-TPD、NPB、TCTA、TAPC、CBP、TFB和DNA中的一种或多种，所述化合物选自Li-TFSI、NiO、CuSCN、MoO 3、CuO、V 2O 5或CuS中的一种，但不限于此。
在一些实施方式中，所述电子阻挡材料层中材料的HOMO能级为-5.0～-8.0eV，所述电子阻挡材料层的LUMO能级为-2.0～-5.0eV。
在一些实施方式中，本公开还提供一种如图1所示正型结构的量子点发光二极管，所述正型结构的量子点发光二极管包括从下至上层叠设置的基板10、阳极20、空穴传输层30、发光层、电子传输层50以及阴极60，所述发光层包括层叠设置的n层量子点发光层41，相邻的所述两层量子点发光层之间设置有n-1层电子阻挡材料层42，所述n为大于等于3的整数，且所述n-1层电子阻挡材料层中，相邻的两层电子阻挡材料层之间，靠近阴极的电子阻挡材料层材料的HOMO能级和LUMO能级均大于靠近阳极的电子阻挡材料层材料的HOMO能级和LUMO能级。
本实施例量子点发光二极管通过所述发光层的设置能够有效平衡电子和空穴的注入速率，从而提高载流子在量子点发光层中的复合效率，进而提高量子点发光二极管的发光效率、稳定性和使用寿命。实现上述效果的机理具体如下：
对于量子点发光二极管而言，电子从阴极传输至量子点发光层的过程中，电子在各传输层的LUMO能级越深，电子传输时的势垒越大，电子隧穿过该传输 层时所需要的能量越高，导致电子传输速率越慢；而空穴从阳极传输至量子点发光层的过程中，空穴在各传输层的HOMO能级越深，空穴传输时的势垒越大，空穴隧穿过该传输层时所需要的能量越高，导致空穴传输速率越慢。本实施例所述量子点发光二极管中的发光层包括层叠设置的n层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，且相邻的两层电子阻挡材料层之间，靠近阴极的电子阻挡材料层材料的HOMO能级和LUMO能级均大于靠近阳极的电子阻挡材料层材料的HOMO能级和LUMO能级。如图2所示，所述电子阻挡材料层的LUMO能级均大于所述量子点发光层的LUMO能级，当电子从阴极传输至各量子点发光层的过程中，所述电子需要先隧穿LUMO能级最大的电子阻挡材料层，此时所需要克服的电子势垒最大；然后再隧穿LUMO能级依次减小的电子阻挡材料层到达相应的量子点发光层，在后续隧穿过程中，电子仍需克服较大能级的势垒，所述电子在各电子阻挡材料层中的传输速率呈现减慢趋势；由于所述电子阻挡材料层的HOMO能级均小于量子点发光层的HOMO能级，当空穴从阳极传输至各量子点发光层的过程中，空穴在隧穿HOMO能级最深的量子点发光层时，所需要克服的势垒最大，该量子点发光层中的空穴积累数量相对较少；随着量子点发光层中电子阻挡材料层的HOMO能级成阶梯式变深时，空穴隧穿相应电子阻挡材料层时所需要克服的势垒越来越小，因此，随着空穴的进一步传输，空穴的传输速率呈加快趋势。本公开量子点发光二极管通过所述发光层的设置能够有效平衡电子和空穴的注入速率，从而提高载流子在量子点发光层中的复合效率，进而提高量子点发光二极管的发光效率、稳定性和使用寿命。
在一些实施方式中，所述量子点发光层的层数为3-11层，即所述电子阻挡材料层的层数为2-10层。优选的，所述电子阻挡材料层的层数为2-5层。
在一些实施方式中，所述每层电子阻挡材料层的厚度为2-5nm。
在一些实施方式中，所述电子阻挡材料层材料的HOMO能级为-5.0～-8.0eV，所述电子阻挡材料层材料的LUMO能级为-2.0～-5.0eV。在一些具体的实施方式中，所述n-1层电子阻挡材料层中，相邻的两层电子阻挡材料层之间，靠近阴极的电子阻挡材料层材料的HOMO能级和LUMO能级均大于靠近阳极的电子阻挡材料层材料的HOMO能级和LUMO能级，且相邻电子阻挡材料层材料的HOMO能级相差为-0.1～-0.5eV，相邻电子阻挡材料层材料的LUMO能级相差为 -0.1～-0.5eV。
在一些实施方式中，电子阻挡材料层材料选自PVK、Poly-TPD、NPB、TCTA、TAPC、CBP、TFB和DNA中的一种或多种，但不限于此。
在一些实施方式中，所述电子阻挡材料层的材料选自化合物掺杂的PVK、Poly-TPD、NPB、TCTA、TAPC、CBP、TFB和DNA中的一种或多种，所述化合物选自Li-TFSI、NiO、CuSCN、MoO 3、CuO、V 2O 5或CuS中的一种，但不限于此。选择化合物掺杂的电子阻挡材料的目的主要是为了调整电子阻挡材料层材料的HOMO和LUMO能级，实现阶能级间的阶梯势垒，从而调整电子和空穴的传输速率，提高激子的复合效率。作为举例，所述电子阻挡材料层材料选自PVK:Li-TFSI，PVK:NiO、PVK:CuSCN、PVK:MoO 3、PVK:CuO、PVK:V 2O 5、PVK:CuS、Poly-TPD、Poly-TPD:Li-TFSI，Poly-TPD:-NiO，Poly-TPD:CuSCN，Poly-TPD:MoO 3、Poly-TPD:CuO、Poly-TPD:V 2O 5、Poly-TPD:CuS、NPB、NPB:Li-TFSI，NPB-TPD:-NiO，NPB-TPD:CuSCN，NPB:MoO 3、NPB:CuO、NPB:V 2O 5、NPB:CuS、TCTA、TCTA:Li-TFSI，TCTA-TPD:-NiO，TCTA-TPD:CuSCN、TCTA:MoO 3、TCTA:CuO、TCTA:V 2O 5、TCTA:CuS、TAPC、TAPC:Li-TFSI、TAPC-TPD:-NiO，TAPC-TPD:CuSCN，TAPC:MoO 3、TAPC:CuO、TAPC:V 2O 5、TAPC:CuS、CBP、CBP:Li-TFSI，CBP-TPD:-NiO、CBP-TPD:CuSCN、CBP:MoO 3、CBP:CuO、CBP:V 2O 5、CBP:CuS、TFB、TFB:Li-TFSI、TFB-TPD:-NiO、TFB-TPD:CuSCN、TFB:MoO 3、TFB:CuO、TFB:V 2O 5和TFB:CuS中的一种或多种，但不限于此。
在一些实施方式中，所述n层量子点发光层中，相邻的所述两层量子点发光层之间，靠近阴极的量子点发光层的厚度大于靠近的量子点发光层的厚度。当量子点发光二极管中的发光层包括层叠设置的n层量子点发光层以及设置在相邻量子点发光层之间的n-1层电子阻挡材料层时，所述空穴从阳极传输至各量子点发光层的传输速率逐渐加快，而电子从阴极传输至各量子点发光层的传输速率逐渐减慢，因此，对于整个量子点发光二极管而言，电子和空穴在越靠近阴极一侧的量子点发光层中的积累量相对越多，为防止量子点发光二极管的漏电流现象，本实施方式设置靠近阴极的量子点发光层的厚度大于靠近的量子点发光层的厚度。在一些具体的实施方式中，所述n层量子点发光层中，相邻的所述两层量子 点发光层之间厚度的相差5-20nm。在一些更具体的实施方式中，所述n层量子点发光层中，最靠近阳极的量子点发光层的厚度为1-10nm，最靠近阴极的量子点发光层的厚度为10-40nm。
在一些实施方式中，所述量子点发光层材料选自II-VI族化合物、III-V族化合物和I-III-VI族化合物中的一种或多种，但不限于此。作为举例，所述II-VI族化合物选自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe、CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS；CdZnSeS、CdZnSeTe和CdZnSTe中的一种或多种；所述III-V族化合物选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP、InAsP、InNP、InNSb、GaAlNP和InAlNP中的一种或多种；所述I-III-VI族化合物选自CuInS 2、CuInSe 2和AgInS 2中的一种或多种。
在一些实施方式中，所述阳极材料选自Li、Ca、Ba、LiF、CsN 3、Cs 2CO 3、CsF、Ag、Mo、Al、Cu和Au中的一种或多种，但不限于此。在一些实施方式中，所述阳极的厚度为20-150nm。
在一些实施方式中，所述空穴传输层材料选自TFB、PVK、Poly-TBP、Poly-TPD、NPB、TCTA、TAPC、CBP、PEODT：PSS、MoO 3、WoO 3、NiO、CuO、V 2O 5和CuS中的一种或多种，但不限于此。在一些实施方式中，所述空穴传输层的厚度为30-100nm。
在一些实施方式中，所述电子传输层材料选自ZnO、TiO 2、Alq 3、SnO、ZrO、AlZnO、ZnSnO、BCP、TAZ、PBD、TPBI、Bphen和CsCO 3中的一种或多种，但不限于此。在一些实施方式中，所述电子传输层的厚度为10-120nm。
在一些实施方式中，所述阴极材料选自ITO、FTO或ZTO中的一种。在一些实施方式中，所述阴极的厚度为60-130nm。
需要说明的是，本公开量子点发光二极管还可包含以下功能层中的一层或多层：设置于阳极和空穴传输层之间的空穴注入层，设置于阴极和电子传输层之间的电子注入层。
本公开的实施方式还提供一种量子点发光二极管的制备方法，如图3所示，包括步骤：
S01、提供基板；
S02、在所述基板制备发光层，所述发光层包括层叠设置的n层量子点发光 层，相邻的所述两层量子点发光层之间设置有电子阻挡材料层，所述电子阻挡材料层的层数为n-1，其中，n为大于等于2的整数。
在一些实施方式中，所述基板为阳极基板，在本公开的一些实施方式中，所述阳极基板可以包括基底、层叠设置在基底表面的阳极；在本公开的又一些实施方式中，所述阳极基板可以包括基底、层叠设置在基底表面的阳极、层叠设置在阳极表面的空穴注入层；在本公开的又在一些实施方式中，所述基板可以包括基底、层叠设置在基底表面的阳极、层叠设置在阳极表面的空穴传输层；在本公开的又在一些实施方式中，所述基板可以包括基底、层叠设置在基底表面的阳极、层叠设置在阳极表面的空穴注入层、层叠设置在空穴注入层表面的空穴传输层。在本公开的又在一些实施方式中，所述阳极基板可以包括基底、层叠设置在基底表面的阳极、层叠设置在阳极表面的空穴注入层、层叠设置在空穴注入层表面的空穴传输层、层叠设置在空穴传输层表面的电子阻挡层。
在一些实施方式中，所述基板为阴极基板，在本公开的一些实施方式中，所述阴极基板包括基底和层叠设置在基底表面的阴极；在本公开的一些实施方式中，所述第二基板包括基底、层叠设置在基底表面的阴极和层叠设置在阴极表面的电子注入层。在本公开的一些实施方式中，所述第二基板包括基底、层叠设置在基底表面的阴极和层叠设置在阴极表面的电子注入层、层叠设置在电子注入层表面的电子传输层；在本公开的一些实施方式中，所述第二基板包括基底、层叠设置在基底表面的阴极和层叠设置在阴极表面的电子注入层、层叠设置在电子注入层表面的电子传输层、层叠设置在电子传输层表面的空穴阻挡层。
本公开的实施方式还提供一种如图1所述正式结构的量子点发光二极管的制备方法的实施例，具体的包括以下步骤：
提供一衬底，在所述衬底上形成阳极；
在所述阳极上制备空穴传输层；
在所述空穴传输层上制备量子点发光层，在所述量子点发光层上制备电子阻挡材料层，在所述电子阻挡材料层上继续制备又一量子点发光层，重复上述步骤至按预定厚度在倒数第一层电子阻挡材料层上制备最后第n层量子点发光层，制得所述发光层；
在所述发光层上制备电子传输层；
在所述电子传输层上制备阴极，得到所述量子点发光二极管；
其中，所述n为大于等于3的整数，且所述n-1层电子阻挡材料层中，相邻的两层电子阻挡材料层之间，靠近阴极的电子阻挡材料层材料的HOMO能级和LUMO能级均大于靠近阳极的电子阻挡材料层材料的HOMO能级和LUMO能级。
本公开中，各层制备方法可以是化学法或物理法，其中化学法包括但不限于化学气相沉积法、连续离子层吸附与反应法、阳极氧化法、电解沉积法、共沉淀法中的一种或多种；物理法包括但不限于溶液法(如旋涂法、印刷法、刮涂法、浸渍提拉法、浸泡法、喷涂法、滚涂法、浇铸法、狭缝式涂布法或条状涂布法等)、蒸镀法(如热蒸镀法、电子束蒸镀法、磁控溅射法或多弧离子镀膜法等)、沉积法(如物理气相沉积法、原子层沉积法、脉冲激光沉积法等)中的一种或多种。
下面通过实施例对本公开进行详细说明。
实施例1
一种量子点发光二极管，从下至上依次包括层叠设置的衬底、阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极，所述发光层包括层叠设置的6层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，沿阳极至阴极的方向，所述每层电子阻挡材料层的材料依次为PVK、掺杂有1.5wt.％Li-TFSI的PVK、掺杂有3wt.％Li-TFSI的PVK、4.5wt.％Li-TFSI的PVK以及6wt.％Li-TFSI的PVK；所述阳极为ITO，厚度为100nm；所述空穴注入层材料为PEDOT:PSS，厚度为40nm；所述空穴传输层材料为TFB，厚度为80nm；所述量子点发光层的材料为InP/ZnS，且每层厚度均为16nm；所述每层电子阻挡材料层的厚度为4nm；所述电子传输层材料为ZnO，厚度为60nm；所述阴极为Al，厚度为50nm。
实施例2
一种量子点发光二极管，从下至上依次包括层叠设置的衬底、阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极，所述发光层包括层叠设置的6层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，沿阳极至阴极的方向，所述每层电子阻挡材料层的材料依次为TFB、掺杂有1.5wt.％Li-TFSI的TFB、掺杂有3wt.％Li-TFSI的TFB、4.5wt.％Li-TFSI的TFB 以及6wt.％Li-TFSI的TFB；所述阳极为ITO，厚度为100nm；所述空穴注入层材料为PEDOT:PSS，厚度为40nm；所述空穴传输层材料为TFB，厚度为80nm；所述量子点发光层的材料为InP/ZnS，且每层厚度均为16nm；所述每层电子阻挡材料层的厚度为4nm；所述电子传输层材料为ZnO，厚度为60nm；所述阴极为Al，厚度为50nm。
实施例3
一种量子点发光二极管，从下至上依次包括层叠设置的衬底、阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极，所述发光层包括层叠设置的6层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，沿阳极至阴极的方向，所述每层电子阻挡材料层的材料依次为TCTA、掺杂有1.5wt.％MoO 3的TCTA、掺杂有3wt.％MoO 3的TCTA、4.5wt.％MoO 3的TCTA以及6wt.％MoO 3的TCTA；所述阳极为ITO，厚度为100nm；所述空穴注入层材料为PEDOT:PSS，厚度为40nm；所述空穴传输层材料为TFB，厚度为80nm；所述量子点发光层的材料为InP/ZnS，且每层厚度均为16nm；所述每层电子阻挡材料层的厚度为4nm；所述电子传输层材料为ZnO，厚度为60nm；所述阴极为Al，厚度为50nm。
实施例4
一种量子点发光二极管，从下至上依次包括层叠设置的衬底、阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极，所述发光层包括层叠设置的6层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，沿阳极至阴极的方向，所述每层电子阻挡材料层的材料依次为PVK、掺杂有1.5wt.％Li-TFSI的PVK、掺杂有3wt.％Li-TFSI的PVK、4.5wt.％Li-TFSI的PVK以及6wt.％Li-TFSI的PVK；所述阳极为ITO，厚度为100nm；所述空穴注入层材料为PEDOT:PSS，厚度为40nm；所述空穴传输层材料为TFB，厚度为80nm；所述量子点发光层的材料为CdZnS/CdZnSe/ZnS，且每层厚度均为16nm；所述每层电子阻挡材料层的厚度为4nm；所述电子传输层材料为ZnO，厚度为60nm；所述阴极为Al，厚度为50nm。
实施例5
一种量子点发光二极管，从下至上依次包括层叠设置的衬底、阳极、空穴注 入层、空穴传输层、发光层、电子传输层和阴极，所述发光层包括层叠设置的6层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，沿阳极至阴极的方向，所述每层电子阻挡材料层的材料依次为TFB、掺杂有1.5wt.％Li-TFSI的TFB、掺杂有3wt.％Li-TFSI的TFB、4.5wt.％Li-TFSI的TFB以及6wt.％Li-TFSI的TFB；所述阳极为ITO，厚度为100nm；所述空穴注入层材料为PEDOT:PSS，厚度为40nm；所述空穴传输层材料为TFB，厚度为80nm；所述量子点发光层的材料为CdZnS/CdZnSe/ZnS，且每层厚度均为16nm；所述每层电子阻挡材料层的厚度为4nm；所述电子传输层材料为ZnO，厚度为60nm；所述阴极为Al，厚度为50nm。
实施例6
一种量子点发光二极管，从下至上依次包括层叠设置的衬底、阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极，所述发光层包括层叠设置的6层量子点发光层以及设置在相邻量子点发光层之间的电子阻挡材料层，沿阳极至阴极的方向，所述每层电子阻挡材料层的材料依次为TCTA、掺杂有1.5wt.％MoO 3的TCTA、掺杂有3wt.％MoO 3的TCTA、4.5wt.％MoO 3的TCTA以及6wt.％MoO 3的TCTA；所述阳极为ITO，厚度为100nm；所述空穴注入层材料为PEDOT:PSS，厚度为40nm；所述空穴传输层材料为TFB，厚度为80nm；所述量子点发光层的材料为CdZnS/CdZnSe/ZnS，且每层厚度均为16nm；所述每层电子阻挡材料层的厚度为4nm；所述电子传输层材料为ZnO，厚度为60nm；所述阴极为Al，厚度为50nm。
综上所述，本公开提供的量子点发光二极管包括设置在阴极和阳极之间的发光层，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有n-1层电子阻挡材料层，所述n为大于等于3的整数，且所述n-1层电子阻挡材料层中，相邻的两层电子阻挡材料层之间，靠近阴极的电子阻挡材料层材料的HOMO能级和LUMO能级均大于靠近阳极的电子阻挡材料层材料的HOMO能级和LUMO能级。本公开中具有阶梯式能级结构的电子阻挡材料层有助于降低空穴注入势垒，从而有利于增加空穴的传输性能，所述具有阶梯式能级结构的电子阻挡材料层还有利于减缓电子的传输性能；也就是说，所述量子点发光二极管通过所述发光层的设置能够有效平衡电子和空穴的注入速率，从而提高 载流子在量子点发光层中的复合效率，进而提高量子点发光二极管的发光效率、稳定性和使用寿命。
应当理解的是，本公开的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本公开所附权利要求的保护范围。

Claims (15)

  1. 一种量子点发光二极管，包括阴极、阳极以及设置在阴极和阳极之间的发光层，其特征在于，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有电子阻挡材料层，所述电子阻挡材料层的层数为n-1，其中，n为大于等于2的整数。
  2. 根据权利要求1所述的量子点发光二极管，其特征在于，所述电子阻挡材料层的材料选自PVK、Poly-TPD、NPB、TCTA、TAPC、CBP、TFB和DNA中的一种或多种。
  3. 根据权利要求1所述的量子点发光二极管，其特征在于，所述电子阻挡材料层的材料选自化合物掺杂的PVK、Poly-TPD、NPB、TCTA、TAPC、CBP、TFB和DNA中的一种或多种，所述化合物选自Li-TFSI、NiO、CuSCN、MoO3、CuO、V2O5或CuS中的一种。
  4. 根据权利要求1所述的量子点发光二极管，其特征在于，所述电子阻挡材料层的HOMO能级为-5.0～-8.0eV，所述电子阻挡材料层的LUMO能级为-2.0～-5.0eV。
  5. 根据权利要求1所述的量子点发光二极管，其特征在于，n为大于等于3的整数，且所述n-1层电子阻挡材料层中，相邻的两层电子阻挡材料层之间，靠近阴极的电子阻挡材料层中材料的HOMO能级和LUMO能级均大于靠近阳极的电子阻挡材料层中材料的HOMO能级和LUMO能级。
  6. 根据权利要求5所述的量子点发光二极管，其特征在于，3≤n≤11。
  7. 根据权利要求5所述的量子点发光二极管，其特征在于，3≤n≤7。
  8. 根据权利要求5所述的量子点发光二极管，其特征在于，相邻电子阻挡材料层中材料的HOMO能级相差为-0.1～-0.5eV，相邻电子阻挡材料层中材料的LUMO能级相差为-0.1～-0.5eV。
  9. 根据权利要求1所述的量子点发光二极管，其特征在于，所述n层量子点发光层中，相邻的所述两层量子点发光层之间，靠近阴极的量子点发光层的厚度大于靠近的量子点发光层的厚度。
  10. 根据权利要求9所述的量子点发光二极管，其特征在于，所述n层量子点发光层中，相邻的所述两层量子点发光层之间厚度的相差5-20nm。
  11. 根据权利要求9所述的量子点发光二极管，其特征在于，所述n层量子 点发光层中，最靠近阳极的量子点发光层的厚度为1-10nm，最靠近阴极的量子点发光层的厚度为10-40nm。
  12. 根据权利要求1-11任一项所述的量子点发光二极管，其特征在于，每层所述电子阻挡材料层的厚度为2-5nm。
  13. 根据权利要求1-11任一项所述的量子点发光二极管，其特征在于，所述阴极与量子点发光层之间设置有电子传输层。
  14. 根据权利要求1-11任一项所述的量子点发光二极管，其特征在于，所述阳极与量子点发光层之间设置有空穴传输层。
  15. 一种量子点发光二极管的制备方法，其特征在于，包括如下步骤：
    提供基板；
    在所述基板制备发光层，所述发光层包括层叠设置的n层量子点发光层，相邻的所述两层量子点发光层之间设置有电子阻挡材料层，所述电子阻挡材料层的层数为n-1，其中，n为大于等于2的整数。
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