WO2020133686A1 - 线源装置和 oled 蒸镀机 - Google Patents
线源装置和 oled 蒸镀机 Download PDFInfo
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- WO2020133686A1 WO2020133686A1 PCT/CN2019/077019 CN2019077019W WO2020133686A1 WO 2020133686 A1 WO2020133686 A1 WO 2020133686A1 CN 2019077019 W CN2019077019 W CN 2019077019W WO 2020133686 A1 WO2020133686 A1 WO 2020133686A1
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- Prior art keywords
- crucible
- cavity
- line source
- wire
- mechanisms
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Definitions
- the present application relates to an organic electroluminescence display technology, in particular to a line source device and an OLED evaporation machine.
- OLED Organic Light Emitting Diode
- TFT Thin Film Transistor (thin film transistor) substrate pixels
- the current vacuum deposition method commonly used in mass production that is, in a vacuum environment, the organic material is heated and evaporated to the TFT substrate pixel, and the mass production of red, green and blue light-emitting film materials is usually linear evaporation
- the source and the linear crucible, the line source and the crucible are integrated into a rectangular parallelepiped shape, the outermost is the linear source, the inner design heating wire, the crucible is installed in the line source, the organic material is installed in the crucible, the crucible and the crucible cover, the crucible cover has In the nozzle, the organic material is evaporated from the nozzle by heating and sublimating evenly and TFT substrate.
- the organic material needs to be opened and added regularly. Since the evaporation environment is a high vacuum environment, each time the material is added, the vacuum needs to be broken. Take out the crucible to add the material, then close the chamber to evacuate, the shutdown time is long, and the open chamber is easy to pollute the chamber It has an impact on the process yield and equipment utilization rate.
- the embodiments of the present application provide an efficient line source device and an OLED vapor deposition machine to solve the technical problem that the existing line source device takes a long time to add a vapor deposition material in the vacuum vapor deposition process and is easily polluted when the cavity is opened .
- An embodiment of the present application provides a line source device, including:
- a line source mechanism for spraying gaseous organic materials onto the TFT substrate including a line source cavity
- each of the crucible mechanisms is disposed outside the line source mechanism, and each of the crucible mechanisms includes a crucible cavity and a connection valve;
- connection valve is provided between the crucible cavity and the line source cavity, and is used to separate or communicate the crucible cavity and the line source cavity;
- the wire source mechanism includes a plurality of nozzles, the plurality of nozzles are connected to the wire source cavity and located on one side of the wire source cavity, and the other side of the wire source cavity is provided with at least two Openings, the openings correspond to the crucible mechanisms in one-to-one correspondence, and each of the crucible mechanisms is correspondingly fixedly disposed at the opening;
- Each of the crucible mechanisms further includes a second heater, a crucible, and a vacuum pump; the second heater is disposed on the crucible cavity, the crucible is disposed on the crucible cavity, and the vacuum pump is disposed on the Outside the crucible cavity, the vacuum pump is used to evacuate or inflate the crucible cavity.
- the plurality of nozzles are arranged in an array, and the nozzles between adjacent rows are staggered.
- the wire source mechanism further includes at least two baffles, and the at least two baffles are spaced apart from each other and between the nozzle and the opening;
- Each guide plate is provided with a through hole, and the through hole is used to guide the gaseous organic material in the crucible mechanism to the nozzle;
- the through holes between adjacent deflectors are arranged in a staggered manner; and from the side of the opening to the side of the nozzle, the diameter of the through holes in the deflector decreases gradually.
- the density of the through-holes on the deflector plate increases gradually.
- the wire source mechanism includes at least two first heaters, each of the first heaters is used to heat a baffle; each of the first heaters includes electric heating Wire, each of the deflectors is provided with a channel, and the heating wire is arranged in the channel;
- the heating wire extends from one end to the other end of the deflector, the first heater is provided with two heating ends, and the two heating ends are respectively located at both ends of the same deflector and are connected to The heating wire.
- the wire source mechanism further includes a first cooling layer and a first heat insulation layer
- the crucible mechanism further includes a second cooling layer and a second heat insulation layer
- the first cooling layer is provided on the outer wall of the line source cavity, the first heat insulation layer is provided between the first cooling layer and the line source cavity; the second cooling layer is provided On the outer wall of the crucible cavity, the second heat insulation layer is disposed between the second cooling layer and the crucible cavity.
- An embodiment of the present application further provides a line source device, which includes:
- a line source mechanism for spraying gaseous organic materials onto the TFT substrate including a line source cavity
- each of the crucible mechanisms is disposed outside the line source mechanism, and each of the crucible mechanisms includes a crucible cavity and a connection valve;
- connection valve is provided between the crucible cavity and the line source cavity, and is used to separate or communicate the crucible cavity and the line source cavity.
- the wire source mechanism includes a plurality of nozzles, the plurality of nozzles communicating with the wire source cavity and located on one side of the wire source cavity, the wire source cavity At least two openings are provided on the other side of the base, and the openings correspond to the crucible mechanisms in one-to-one correspondence, and each of the crucible mechanisms is fixedly disposed at the opening.
- the plurality of nozzles are arranged in an array, and the nozzles between adjacent rows are staggered.
- the wire source mechanism further includes at least two baffles, and the at least two baffles are spaced apart from each other and between the nozzle and the opening;
- Each guide plate is provided with a through hole, and the through hole is used to guide the gaseous organic material in the crucible mechanism to the nozzle;
- the through holes between adjacent deflectors are arranged in a staggered manner; and from the side of the opening to the side of the nozzle, the diameter of the through holes in the deflector decreases gradually.
- the density of the through-holes on the deflector plate increases gradually.
- the wire source mechanism includes at least two first heaters, each of the first heaters is used to heat a baffle; each of the first heaters includes electric heating Wire, each of the deflectors is provided with a channel, and the heating wire is arranged in the channel;
- the heating wire extends from one end to the other end of the deflector, the first heater is provided with two heating ends, and the two heating ends are respectively located at both ends of the same deflector and are connected to The heating wire.
- each of the crucible mechanisms further includes a second heater, a crucible, and a vacuum pump; the second heater is disposed on the crucible cavity, and the crucible is disposed on the crucible cavity In the body, the vacuum pump is disposed outside the crucible cavity, and the vacuum pump is used to evacuate or inflate the crucible cavity.
- the wire source mechanism further includes a first cooling layer and a first heat insulation layer
- the crucible mechanism further includes a second cooling layer and a second heat insulation layer
- the first cooling layer is provided on the outer wall of the line source cavity, the first heat insulation layer is provided between the first cooling layer and the line source cavity; the second cooling layer is provided On the outer wall of the crucible cavity, the second heat insulation layer is disposed between the second cooling layer and the crucible cavity.
- This application also relates to an OLED vapor deposition machine, which includes:
- a vapor deposition chamber for vapor deposition of OLED A vapor deposition chamber for vapor deposition of OLED.
- a line source device for spraying gaseous organic materials includes:
- a line source mechanism which is provided in the evaporation chamber and used for spraying gaseous organic materials onto the TFT substrate, the line source mechanism includes a line source cavity;
- At least two crucible mechanisms are provided outside the evaporation chamber for providing gaseous organic materials, each of the crucible mechanisms is provided outside of the line source mechanism, and each of the crucible mechanisms includes a crucible Cavity and a connecting valve;
- connection valve is provided between the crucible cavity and the line source cavity, and is used to separate or communicate the crucible cavity and the line source cavity.
- the line source mechanism includes a plurality of nozzles, the plurality of nozzles are connected to the line source cavity and located on one side of the line source cavity, the line source cavity At least two openings are provided on the other side of the body, and the openings correspond to the crucible mechanisms in one-to-one correspondence, and each of the crucible mechanisms is fixedly disposed at the opening.
- the plurality of nozzles are arranged in an array, and the nozzles between adjacent rows are staggered.
- the line source mechanism further includes at least two baffles, and the at least two baffles are spaced apart from each other and between the nozzle and the opening;
- Each guide plate is provided with a through hole, and the through hole is used to guide the gaseous organic material in the crucible mechanism to the nozzle;
- the through holes between adjacent deflectors are arranged in a staggered manner; and from the side of the opening to the side of the nozzle, the diameter of the through holes in the deflector decreases gradually.
- the density of the through holes on the baffle plate increases gradually.
- the line source mechanism includes at least two first heaters, each of the first heaters is used to heat a deflector; each of the first heaters includes A heating wire, each of the deflectors is provided with a channel, and the heating wire is arranged in the channel;
- the heating wire extends from one end to the other end of the deflector, the first heater is provided with two heating ends, and the two heating ends are respectively located at both ends of the same deflector and are connected to The heating wire.
- each of the crucible mechanisms further includes a second heater, a crucible, and a vacuum pump; the second heater is disposed on the crucible cavity, and the crucible is disposed on the crucible In the cavity, the vacuum pump is disposed outside the crucible cavity, and the vacuum pump is used to evacuate or inflate the crucible cavity.
- the line source mechanism further includes a first cooling layer and a first heat insulation layer
- the crucible mechanism further includes a second cooling layer and a second heat insulation layer
- the first cooling layer is provided on the outer wall of the line source cavity, the first heat insulation layer is provided between the first cooling layer and the line source cavity; the second cooling layer is provided On the outer wall of the crucible cavity, the second heat insulation layer is disposed between the second cooling layer and the crucible cavity.
- the line source device and OLED vapor deposition machine of the present application are provided with at least two crucible mechanisms, so that one of the crucible mechanisms works, and the other crucible mechanisms are in a standby state This configuration improves the efficiency of the equipment and reduces the feeding time of the equipment.
- the crucible mechanism is provided with a vapor deposition chamber body. When the crucible mechanism needs to be replaced, the opening of the vapor deposition can be avoided.
- the cavity reduces the pollution in the evaporation chamber and improves the production yield; and in the OLED evaporation machine, when the organic material needs to be added, only the crucible mechanism without material needs to be opened, and the evaporation chamber does not need to be opened. Thereby reducing the cavity opening time and saving electricity and gas energy. It solves the technical problem that the existing line source device takes a long time when adding evaporation materials in the vacuum evaporation process and is easily polluted when the cavity is opened.
- FIG. 1 is a schematic structural diagram of an embodiment of a line source device of the present application
- FIG. 2 is a schematic structural view of a deflector and a heater of an embodiment of a line source device of the present application
- FIG. 3 is a schematic structural diagram of an embodiment of an OLED vapor deposition machine of the present application.
- FIG. 1 is a schematic structural diagram of an embodiment of a line source device of the present application.
- the wire source device 100 of the embodiment of the present application includes a wire source mechanism 10 and at least two crucible mechanisms 20.
- the line source mechanism 10 is used to spray the gaseous organic material onto the external TFT substrate.
- the wire source mechanism 10 includes a wire source cavity 11.
- the crucible mechanism 20 is used to provide a gaseous organic material.
- Each crucible mechanism 20 is provided outside the line source mechanism 10.
- Each crucible mechanism 20 includes a crucible cavity 21 and a connection valve 22.
- connection valve 22 is provided between the crucible cavity 21 and the line source cavity 11 and is used to separate or communicate the crucible cavity 21 and the line source cavity 11.
- the wire source device 100 when the wire source device 100 is in the working state, one of the crucible mechanisms 20 and the wire source mechanism 10 are in communication and in a working state, and the other crucible mechanisms 20 are isolated from the wire source mechanism 10 and are in a working state.
- the crucible mechanism 20 in the working state is used up, the crucible mechanism 20 can be closed to isolate it from the line source mechanism 10. Then, another crucible mechanism 20 is opened to communicate with the line source mechanism 10, and work begins.
- the crucible mechanism 20 where the organic material is used up opens the cavity and adds the organic material, while the line source device 100 works at the same time. Such a configuration improves the efficiency of the equipment and reduces the feeding time of the equipment.
- the crucible mechanism 20 works alternately to avoid the cavity opening of the wire source mechanism 10 due to lack of material, thereby reducing the contamination of the wire source cavity 11 of the wire source mechanism 10.
- two crucible mechanisms 20 are provided as an example for description, but it is not limited thereto.
- the wire source mechanism 10 includes a plurality of nozzles 12.
- the plurality of nozzles 12 communicate with the line source cavity 11 and are located on one side of the line source cavity 11.
- At least two openings 13 are formed on the other side of the line source cavity 11.
- the opening 13 corresponds to the crucible mechanism 20 in one-to-one correspondence.
- Each crucible mechanism 20 is correspondingly fixedly arranged at the opening 13.
- the crucible mechanism 20 is arranged on the opposite side of the nozzle 12, on the one hand, it is convenient to arrange the crucible mechanism 20 outside the evaporation chamber of the external evaporation machine, and the line source mechanism 10 can be arranged in the evaporation chamber; on the other hand With this arrangement, the distance between the crucible mechanism 20 and the nozzle 12 is shortened to improve the spraying efficiency of the gaseous organic material.
- the plurality of nozzles 12 are arranged in an array, and the nozzles 12 between adjacent rows are staggered.
- the nozzle 12 between adjacent columns is repeatedly sprayed on the same OLED device, resulting in the phenomenon that the organic film layer has a thickness difference and is uneven. That is, such an arrangement improves the uniformity of the organic film layer.
- the wire source mechanism 10 further includes at least two baffles 14. At least two deflectors 14 are arranged at intervals from each other and between the nozzle 12 and the opening 13. In this embodiment, two deflectors 14 are provided, and in some embodiments, the number of deflectors 14 is not limited to this.
- Each guide plate 14 defines a through hole 141.
- the through hole 141 is used to guide the gaseous organic material in the crucible mechanism 20 to the nozzle 12.
- the through holes 141 between adjacent deflectors 14 are staggered. And from the side of the opening 13 to the side of the nozzle 12, the diameter of the through hole 141 on the deflector 14 decreases.
- the deflector 14 close to the crucible mechanism 20 serves the purpose of guiding the gaseous organic material; on the other hand, combined with the staggered arrangement of the through holes of the two deflectors 14, it serves to buffer the gaseous state The effect of organic material impacting the nozzle 12.
- the diameter of the through hole 141 of the deflector 14 close to the crucible mechanism 20 is set large, so that a large amount of gaseous organic material passes through the deflector. Setting the aperture of the deflector 14 close to the nozzle 12 to be small facilitates the control of the amount of gaseous organic material ejected, and thus facilitates the uniformity of film formation.
- the density of the through holes 141 in the deflector 14 increases from the side of the opening 13 to the side of the nozzle 12.
- Such an arrangement improves the outflow density of the deflector 14 close to the nozzle 12, thereby buffering the flow speed of the gaseous organic material, and at the same time makes the flow rate of the gaseous organic material to the nozzle 12 more balanced. Furthermore, the uniformity of film formation is improved.
- the number of deflectors is greater than two, and the greater the number of deflectors, the more balanced the flow rate of gaseous organic material to the nozzle and the longer the discharge time of gaseous organic material. Therefore, in some embodiments, the number of deflectors is between two and four.
- FIG. 2 is a schematic structural diagram of a deflector and a heater of an embodiment of a line source device of the present application.
- the wire source mechanism 10 includes at least two first heaters, each of which is used to heat a deflector 14.
- Each first heater includes an electric heating wire 151.
- Each guide plate 14 is provided with a channel.
- the heating wire 151 is disposed in the channel.
- the heating wire 151 extends from one end of the deflector 14 to the other end.
- the first heater is provided with two heating ends 152.
- the two heating ends 152 are respectively located at two ends of the same deflector 14 and connected to the heating wire 151.
- the setting of the first heater makes the deflector 14 have a certain temperature, thereby avoiding the situation where the temperature is too low and the organic material adheres to the deflector 14 or blocks the through hole 141.
- the arrangement of the two heating ends will be used to improve the uniformity of the temperature of the deflector 14 and to prevent the through holes 141 away from the heating end from being blocked by organic materials due to the uneven temperature of the deflector 14.
- the wire source mechanism 10 further includes a third heater, which is used to heat the nozzle 12 to prevent the organic material from clogging the nozzle 12.
- the third heater may be provided in the form of a heating wire wound around the nozzle, or in a form in which a heating sheet is attached to the nozzle.
- the heating end of the first heater may be one or more than two.
- the material of the nozzle 12 and the deflector 14 can be a metal alloy, and it has the characteristics of high temperature resistance, no deformation and a small coefficient of thermal expansion.
- each crucible mechanism 20 further includes a second heater 23, a crucible 24, and a vacuum pump 25.
- the second heater 23 is provided on the crucible cavity 21.
- the crucible 24 is provided in the crucible cavity 21.
- the vacuum pump 25 is provided outside the crucible cavity 21. The vacuum pump 25 is used to evacuate the crucible cavity 21 or to inflate the crucible cavity 21.
- the crucible 24 uses an alloy material, but it is not limited to this.
- the second heater 23 is set according to the material evaporation temperature to ensure the stability of the evaporation rate.
- the vacuum pump 25 is mainly used for vacuuming after the crucible cavity 21 is charged and maintained, and the vacuum is pumped to the vacuum degree of the cavity of the vapor deposition machine.
- the wire source mechanism 10 further includes a first cooling layer 16 and a first heat insulation layer 17.
- the crucible mechanism 20 further includes a second cooling layer 26 and a second heat insulating layer 27.
- the first cooling layer 16 is provided on the outer wall of the line source cavity 11.
- the first heat insulation layer 17 is provided between the first cooling layer 16 and the line source cavity 11.
- the second cooling layer 26 is provided on the outer wall of the crucible cavity 21.
- the second heat insulating layer 27 is provided between the second cooling layer 26 and the crucible cavity 21.
- the first cooling layer 16 and the second cooling layer 26 may be cooling plates, and a cooling water channel is provided in the cooling plate for cooling by water cooling.
- the arrangement of the first cooling layer 16 and the second cooling layer 26 effectively controls the adverse effects caused by the equipment on the surrounding environment or the cavity and the device.
- the operation process of this embodiment of the line source device 100 is:
- the line source device 100 is installed in the OLED vapor deposition machine, the line source mechanism 10 is installed in the vapor deposition chamber of the vapor deposition machine, the crucible mechanism 20 is arranged outside the vapor deposition chamber, and the crucible mechanism 20 is in a closed state.
- the evaporation chamber and any crucible mechanism 20 (take the first crucible mechanism as an example, and the other crucible mechanism is the second crucible mechanism) are subjected to vacuum processing: in the first crucible mechanism, the vacuum pump 25 is turned on The crucible cavity 21 is evacuated. When the vacuum is evacuated to the vacuum degree of the evaporation cavity, the connection valve 22 is opened, and the crucible cavity 21, the line source cavity 11 and the evaporation cavity are connected, and at the same time they are in a high vacuum status.
- the gaseous organic material flows from the crucible cavity 21 to the line source cavity 11, and enters the nozzle 12 through the through hole 141 of the deflector 14, and then the gaseous organic material is ejected from the nozzle 12, Act on the OLED device.
- the second heater 23 in the second crucible mechanism 20 heats the crucible cavity 21 under vacuum, and the organic material evaporates into a gaseous organic material;
- connection valve 22 of the first crucible mechanism 20 is closed, and the connection valve 22 of the second crucible mechanism 20 is opened, and the second crucible mechanism 20 begins to work; the first crucible mechanism 20 is inflated to break the vacuum, the crucible cavity door is opened, and the crucible 24 is taken out , Add organic materials, close the crucible cavity 11, vacuum the crucible cavity 11, and heat the crucible cavity 11 to make the organic material into a gaseous organic material, and then be in a working state.
- FIG. 3 is a schematic structural diagram of an embodiment of an OLED vapor deposition machine of the present application.
- the present application also relates to an OLED vapor deposition machine 1000, which includes a vapor deposition chamber 200 and a line source device 100.
- the vapor deposition chamber 200 is used for vapor deposition of OLED.
- the line source device 100 is used for spraying gaseous organic materials.
- the wire source device 100 includes a wire source mechanism 10 and at least two crucible mechanisms 20.
- the line source mechanism 10 is disposed in the vapor deposition chamber 200 and is used for spraying the gaseous organic material onto the external TFT substrate.
- the wire source mechanism 10 includes a wire source cavity 11.
- the crucible mechanism 20 is disposed outside the evaporation chamber 200, and is used to provide a gaseous organic material. Each crucible mechanism 20 is provided outside the line source mechanism 10.
- Each crucible mechanism 20 includes a crucible cavity 21 and a connection valve 22.
- the embodiment of the OLED vapor deposition machine 1000 of the present application uses at least two crucible mechanisms 20 to make one of the crucible mechanisms 20 work and the other crucible mechanisms 20 to be in a working state. Such an arrangement improves the use efficiency of the equipment and reduces the equipment Feeding time.
- the crucible mechanism 20 is provided with a vapor deposition chamber 200. When the crucible mechanism 20 needs to be replaced, the vapor deposition chamber 200 can be avoided to be opened, which reduces the vapor deposition chamber 200. Pollution has improved production yield.
- the OLED vapor deposition machine 1000 when the organic material needs to be added, only the crucible mechanism 20 without materials needs to be opened, and the vapor deposition chamber 2000 does not need to be opened, thereby reducing the cavity opening time and saving electric and gas energy.
- the structure of the line source device 100 of the embodiment of the OLED vapor deposition machine 1000 is the same as that of the line source device of the above embodiment.
- the operation process of the OLED vapor deposition machine 1000 is similar to or the same as the operation process of the line source device of the foregoing embodiment. For details, please refer to the content of the foregoing embodiment, and will not be repeated here.
- the line source device and OLED vapor deposition machine of the present application are provided with at least two crucible mechanisms, so that one of the crucible mechanisms works, and the other crucible mechanisms are in a standby state This configuration improves the efficiency of the equipment and reduces the feeding time of the equipment.
- the crucible mechanism is provided with a vapor deposition chamber body. When the crucible mechanism needs to be replaced, the opening of the vapor deposition can be avoided.
- the cavity reduces the pollution in the evaporation chamber and improves the production yield; and in the OLED evaporation machine, when the organic material needs to be added, only the crucible mechanism without material needs to be opened, and the evaporation chamber does not need to be opened. Thereby reducing the cavity opening time and saving electricity and gas energy. It solves the technical problem that the existing line source device takes a long time when adding the evaporation material during the vacuum evaporation process and is easily polluted when the cavity is opened.
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Abstract
一种线源装置(100),包括:一线源机构(10),用于将气态有机材料喷镀到TFT基板上,线源机构(10)包括一线源腔体(11);以及至少两个坩埚机构(20),用于提供气态有机材料,每个坩埚机构(20)均设置在线源机构(10)的外侧,每个坩埚机构(20)均包括一坩埚腔体(21)和连接阀(22);连接阀(22)设置在坩埚腔体(21)和线源腔体(11)之间,且用于将坩埚腔体(21)和线源腔体(11)隔开或连通;线源机构(10)包括多个喷嘴(12),多个喷嘴(12)连通于线源腔体(11)且位于线源腔体(11)的一侧,线源腔体(11)的另一侧开设有至少两个开口(13),开口(13)和坩埚机构(20)一一对应,每个坩埚机构(20)对应的固定设置在开口(13)处;每个坩埚机构(20)还包括第二加热器(23)、坩埚(24)和真空泵(25);第二加热器设置(23)在坩埚腔体(21)上,坩埚(24)设置在坩埚腔体(21)内,真空泵(25)设置在坩埚腔体(21)的外侧,真空泵(25)用于对坩埚腔体(21)抽真空或向坩埚腔体(21)充气。还公开了一种线源装置(100)和一种OLED蒸镀机。
Description
本申请涉及一种有机电致发光显示技术,特别涉及一种线源装置和OLED蒸镀机。
OLED(Organic Light Emitting Diode,有机发光二极管)显示器制程关键就是将有机发光材料填充至TFT(Thin
Film Transistor,薄膜晶体管)基板像素中,目前量产普遍采用的真空蒸镀方式,即在真空环境下降有机材料加热蒸发至TFT基板像素,量产蒸镀红绿蓝发光膜层材料通常用线性蒸发源和线性坩埚,线源与坩埚为一体设计呈长方体形状,最外面为线性源,内设计加热丝、坩埚装于线源里面、有机材料装于坩埚里面,坩埚加坩埚盖,坩埚盖上有喷嘴,有机材料通过加热升华从喷嘴均匀的蒸发出来与TFT基板。
蒸镀制程中有机材料需要定期开腔添加,由于蒸镀环境为高真空环境,每次添加材料需要破真空,拿出坩埚添加材料,再关腔抽真空,停机时间久,而且开腔体容易污染腔体,对制程良率与设备稼动率都有影响。
本申请实施例提供一种高效的线源装置和OLED蒸镀机,以解决现有的线源装置在真空蒸镀过程中,添加蒸镀材料时,耗时长且开腔体时容易污染的技术问题。
本申请实施例提供一种线源装置,其包括:
一线源机构,用于将气态有机材料喷镀到TFT基板上,所述线源机构包括一线源腔体;以及
至少两个坩埚机构,用于提供气态有机材料,每个所述坩埚机构均设置在所述线源机构的外侧,每个所述坩埚机构均包括一坩埚腔体和连接阀;
所述连接阀设置在所述坩埚腔体和所述线源腔体之间,且用于将所述坩埚腔体和所述线源腔体隔开或连通;
所述线源机构包括多个喷嘴,所述多个喷嘴连通于所述线源腔体且位于所述线源腔体的一侧,所述线源腔体的另一侧开设有至少两个开口,所述开口和所述坩埚机构一一对应,每个所述坩埚机构对应的固定设置在所述开口处;
每个所述坩埚机构还包括第二加热器、坩埚和真空泵;所述第二加热器设置在所述坩埚腔体上,所述坩埚设置在所述坩埚腔体内,所述真空泵设置在所述坩埚腔体的外侧,所述真空泵用于对所述坩埚腔体抽真空或向所述坩埚腔体充气。
在本申请的线源装置中,所述多个喷嘴呈阵列式排布,且相邻行之间的喷嘴相错设置。
在本申请的线源装置中,所述线源机构还包括至少两个导流板,所述至少两个导流板相互间隔设置且设置在所述喷嘴和所述开口之间;
每个导流板上均开设有通孔,所述通孔用于将所述坩埚机构内的气态有机材料导流至所述喷嘴;
其中相邻的所述导流板之间的通孔相错设置;且自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的孔径递减。
在本申请的线源装置中,自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的密度递增。
在本申请的线源装置中,所述线源机构包括至少两个第一加热器,每个所述第一加热器用于加热一所述导流板;每个所述第一加热器包括电热丝,每个所述导流板上开设有沟道,所述电热丝设置在所述沟道内;
所述电热丝从所述导流板的一端延伸至另一端,所述第一加热器设置有两个加热端,两个所述加热端分别位于同一所述导流板的两端且连接于所述电热丝。
在本申请的线源装置中,所述线源机构还包括第一冷却层和第一隔热层,所述坩埚机构还包括第二冷却层和第二隔热层;
所述第一冷却层设置在所述线源腔体的外壁上,所述第一隔热层设置在所述第一冷却层和所述线源腔体之间;所述第二冷却层设置在所述坩埚腔体的外壁上,所述第二隔热层设置在所述第二冷却层和所述坩埚腔体之间。
本申请实施例还提供一种线源装置,其包括:
一线源机构,用于将气态有机材料喷镀到TFT基板上,所述线源机构包括一线源腔体;以及
至少两个坩埚机构,用于提供气态有机材料,每个所述坩埚机构均设置在所述线源机构的外侧,每个所述坩埚机构均包括一坩埚腔体和连接阀;
所述连接阀设置在所述坩埚腔体和所述线源腔体之间,且用于将所述坩埚腔体和所述线源腔体隔开或连通。
在本申请的线源装置中,所述线源机构包括多个喷嘴,所述多个喷嘴连通于所述线源腔体且位于所述线源腔体的一侧,所述线源腔体的另一侧开设有至少两个开口,所述开口和所述坩埚机构一一对应,每个所述坩埚机构对应的固定设置在所述开口处。
在本申请的线源装置中,所述多个喷嘴呈阵列式排布,且相邻行之间的喷嘴相错设置。
在本申请的线源装置中,所述线源机构还包括至少两个导流板,所述至少两个导流板相互间隔设置且设置在所述喷嘴和所述开口之间;
每个导流板上均开设有通孔,所述通孔用于将所述坩埚机构内的气态有机材料导流至所述喷嘴;
其中相邻的所述导流板之间的通孔相错设置;且自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的孔径递减。
在本申请的线源装置中,自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的密度递增。
在本申请的线源装置中,所述线源机构包括至少两个第一加热器,每个所述第一加热器用于加热一所述导流板;每个所述第一加热器包括电热丝,每个所述导流板上开设有沟道,所述电热丝设置在所述沟道内;
所述电热丝从所述导流板的一端延伸至另一端,所述第一加热器设置有两个加热端,两个所述加热端分别位于同一所述导流板的两端且连接于所述电热丝。
在本申请的线源装置中,每个所述坩埚机构还包括第二加热器、坩埚和真空泵;所述第二加热器设置在所述坩埚腔体上,所述坩埚设置在所述坩埚腔体内,所述真空泵设置在所述坩埚腔体的外侧,所述真空泵用于对所述坩埚腔体抽真空或向所述坩埚腔体充气。
在本申请的线源装置中,所述线源机构还包括第一冷却层和第一隔热层,所述坩埚机构还包括第二冷却层和第二隔热层;
所述第一冷却层设置在所述线源腔体的外壁上,所述第一隔热层设置在所述第一冷却层和所述线源腔体之间;所述第二冷却层设置在所述坩埚腔体的外壁上,所述第二隔热层设置在所述第二冷却层和所述坩埚腔体之间。
本申请还涉及一种OLED蒸镀机,其包括:
一蒸镀腔体,用于蒸镀OLED作业;以及
一线源装置,用于喷涂气态有机材料,所述线源装置包括:
一线源机构,设置在所述蒸镀腔体内且用于将气态有机材料喷镀到TFT基板上,所述线源机构包括一线源腔体;以及
至少两个坩埚机构,设置在所述蒸镀腔体外侧,用于提供气态有机材料,每个所述坩埚机构均设置在所述线源机构的外侧,每个所述坩埚机构均包括一坩埚腔体和一连接阀;
所述连接阀设置在所述坩埚腔体和所述线源腔体之间,且用于将所述坩埚腔体和所述线源腔体隔开或连通。
在本申请的OLED蒸镀机中,所述线源机构包括多个喷嘴,所述多个喷嘴连通于所述线源腔体且位于所述线源腔体的一侧,所述线源腔体的另一侧开设有至少两个开口,所述开口和所述坩埚机构一一对应,每个所述坩埚机构对应的固定设置在所述开口处。
在本申请的OLED蒸镀机中,所述多个喷嘴呈阵列式排布,且相邻行之间的喷嘴相错设置。
在本申请的OLED蒸镀机中,所述线源机构还包括至少两个导流板,所述至少两个导流板相互间隔设置且设置在所述喷嘴和所述开口之间;
每个导流板上均开设有通孔,所述通孔用于将所述坩埚机构内的气态有机材料导流至所述喷嘴;
其中相邻的所述导流板之间的通孔相错设置;且自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的孔径递减。
在本申请的OLED蒸镀机中,自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的密度递增。
在本申请的OLED蒸镀机中,所述线源机构包括至少两个第一加热器,每个所述第一加热器用于加热一所述导流板;每个所述第一加热器包括电热丝,每个所述导流板上开设有沟道,所述电热丝设置在所述沟道内;
所述电热丝从所述导流板的一端延伸至另一端,所述第一加热器设置有两个加热端,两个所述加热端分别位于同一所述导流板的两端且连接于所述电热丝。
在本申请的OLED蒸镀机中,每个所述坩埚机构还包括第二加热器、坩埚和真空泵;所述第二加热器设置在所述坩埚腔体上,所述坩埚设置在所述坩埚腔体内,所述真空泵设置在所述坩埚腔体的外侧,所述真空泵用于对所述坩埚腔体抽真空或向所述坩埚腔体充气。
在本申请的OLED蒸镀机中,所述线源机构还包括第一冷却层和第一隔热层,所述坩埚机构还包括第二冷却层和第二隔热层;
所述第一冷却层设置在所述线源腔体的外壁上,所述第一隔热层设置在所述第一冷却层和所述线源腔体之间;所述第二冷却层设置在所述坩埚腔体的外壁上,所述第二隔热层设置在所述第二冷却层和所述坩埚腔体之间。
相较于现有技术的线源装置及OLED蒸镀机,本申请的线源装置及OLED蒸镀机通过至少两个坩埚机构的设置,使得其中一个坩埚机构工作,其他坩埚机构处于待工作状态,这样的设置提高了设备的使用效率,减少了设备加料时间;另外,在OLED蒸镀机中,将坩埚机构设置有蒸镀腔体外,当需要进行更换坩埚机构工作时,可避免打开蒸镀腔体,减少了蒸镀腔体内的污染,提高了生产良率;而且在OLED蒸镀机中,当需要添加有机材料时,只需打开没有材料的坩埚机构,而无需打开蒸镀腔体,从而减少了开腔时间和节省了电和气能源。解决了现有的线源装置在真空蒸镀过程中,添加蒸镀材料时,耗时长且开腔体时容易污染的技术问题。
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获取其他的附图。
图1为本申请的线源装置的实施例的结构示意图;
图2为本申请的线源装置的实施例的导流板和加热器的结构示意图;
图3为本申请的OLED蒸镀机的实施例的结构示意图。
请参照附图中的图式,其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例,其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1,图1为本申请的线源装置的实施例的结构示意图。本申请实施例的线源装置100,其包括一线源机构10和至少两个坩埚机构20。
线源机构10用于将气态有机材料喷镀到外置TFT基板上。线源机构10包括一线源腔体11。坩埚机构20用于提供气态有机材料。每个坩埚机构20均设置在线源机构10的外侧。每个坩埚机构20均包括一坩埚腔体21和连接阀22。
连接阀22设置在坩埚腔体21和线源腔体11之间,且用于将坩埚腔体21和线源腔体11隔开或连通。
在本实施例中,当线源装置100处于工作状态时,其中一个坩埚机构20和线源机构10连通并处于工作状态,其他坩埚机构20与线源机构10隔离且处于待工作状态。而当处于工作状态的坩埚机构20的有机材料用完后,便可关闭该坩埚机构20,使其和线源机构10隔离。随后打开另外一个坩埚机构20,使其和线源机构10连通,并开始工作。而有机材料用完的坩埚机构20开腔并进行有机材料的添加,而线源装置100同时进行工作。这样的设置提高了设备的使用效率,减少了设备加料时间。
另外,通过坩埚机构20交替工作的方式,避免了线源机构10因缺材料而开腔的情况,进而减少了线源机构10的线源腔体11受污染。
需要说明的是,本实施例以设置两个坩埚机构20为例进行说明,但并不限于此。
在线源装置100的实施例中,线源机构10包括多个喷嘴12。多个喷嘴12连通于线源腔体11且位于线源腔体11的一侧。线源腔体11的另一侧开设有至少两个开口13。开口13和坩埚机构20一一对应。每个坩埚机构20对应的固定设置在开口13处。
将坩埚机构20设置在喷嘴12的相对侧,一方面便于将坩埚机构20设置在外置蒸镀机的蒸镀腔体之外,而可以使线源机构10设置在蒸镀腔体内;另一方面,这样的设置,缩短了坩埚机构20到喷嘴12的距离,以提高气态有机材料的喷涂效率。
在线源装置100的实施例中,多个喷嘴12呈阵列式排布,且相邻行之间的喷嘴12相错设置。这样的设置,在短距离的OLED喷涂过程中,由于移动精度的问题,避免了相邻列之间的喷嘴12重复喷涂同一个OLED器件,使得有机膜层存在厚度差且不平整的现象。即这样的设置,提高了有机膜层的均一性。
在线源装置100的实施例中,线源机构10还包括至少两个导流板14。至少两个导流板14相互间隔设置且设置在喷嘴12和开口13之间。本实施例中,导流板14设置有两个,并在一些实施例中导流板14的数量并不限于此。
每个导流板14上均开设有通孔141。通孔141用于将坩埚机构20内的气态有机材料导流至喷嘴12。
其中相邻的导流板14之间的通孔141相错设置。且自开口13的一侧向喷嘴12的一侧,导流板14上通孔141的孔径递减。
在本实施例中,靠近坩埚机构20的导流板14,一方面起到引导气态有机材料的目的;另一方面,结合将两个导流板14的通孔错开的设置,起到缓冲气态有机材料对喷嘴12冲击的效果。另外,将靠近坩埚机构20的导流板14的通孔141的孔径设置大,便于气态有机材料大量的通过该导流板。将靠近喷嘴12的导流板14的孔径设置小,便于控制气态有机材料的喷出量,进而便于控制成膜的均一性。
基于上述的结构,自开口13的一侧向喷嘴12的一侧,导流板14上通孔141的密度递增。这样的设置,提高靠近喷嘴12的导流板14的出气密度,进而缓冲气态有机材料的流动速度,同时使得气态有机材料到达喷嘴12的流量更为均衡。进而提高了成膜的均一性。
在一些实施例中,导流板的数量大于两个,而当导流板的数量越多,则气态有机材料到达喷嘴的流量就越均衡,以及气态有机材料的出料时间就越长。因此在一些实施例中,导流板的数量介于两个到四个之间。
请参照图2,图2为本申请的线源装置的实施例的导流板和加热器的结构示意图。在线源装置100的实施例中,线源机构10包括至少两个第一加热器,每个第一加热器用于加热一导流板14。每个第一加热器包括电热丝151。每个导流板14上开设有沟道。电热丝151设置在沟道内。
电热丝151从导流板14的一端延伸至另一端。第一加热器设置有两个加热端152。两个加热端152分别位于同一导流板14的两端且连接于电热丝151。
第一加热器的设置,使得导流板14具有一定的温度,从而避免了温度过低导致有机材料粘附在导流板14或堵塞通孔141的情况。其中,将采用两个加热端的设置,提高了导流板14温度的均一性,避免了因导流板14的温度不一导致远离加热端的通孔141被有机材料堵塞。
另外,在本实施例中,线源机构10还包括第三加热器,第三加热器用于对喷嘴12进行加热,避免有机材料堵塞喷嘴12。第三加热器可以是以电热丝缠绕喷嘴的形式设置,也可以是加热片贴装在喷嘴上的形式设置。
在一些实施例中,第一加热器的加热端也可以是一个或大于两个。
在本实施例中,喷嘴12和导流板14的材料可选用金属合金,且其具有耐高温、不变形和热膨胀系数小的特点。
在线源装置100的实施例中,每个坩埚机构20还包括第二加热器23、坩埚24和真空泵25。第二加热器23设置在坩埚腔体21上。坩埚24设置在坩埚腔体21内。真空泵25设置在坩埚腔体21的外侧。真空泵25用于对坩埚腔体21抽真空或向坩埚腔体21充气。
其中,坩埚24采用合金材料,当并不限于此。第二加热器23根据材料蒸发温度设定,确保蒸发速率的稳定性。真空泵25主要为坩埚腔体21加料保养后抽真空使用,真空抽到与蒸镀机腔体真空度相当为止。
在线源装置100的实施例中,线源机构10还包括第一冷却层16和第一隔热层17。坩埚机构20还包括第二冷却层26和第二隔热层27。
第一冷却层16设置在线源腔体11的外壁上。第一隔热层17设置在第一冷却层16和线源腔体11之间。第二冷却层26设置在坩埚腔体21的外壁上。第二隔热层27设置在第二冷却层26和坩埚腔体21之间。
其中第一冷却层16和第二冷却层26可以是冷却板,冷却板内设置有流水通道,通过水冷的方式进行冷却。
由于有机材料的蒸发温度高达400~500摄氏度,因此第一冷却层16和第二冷却层26的设置,有效控制设备对周边环境或腔体及器件造成的不良影响。
本线源装置100的实施例的操作过程是:
首先将线源装置100设置于OLED蒸镀机中,并将线源机构10设置在蒸镀机的蒸镀腔体内,将坩埚机构20设置在蒸镀腔体外,坩埚机构20均处于封闭状态。
然后,分别对蒸镀腔体和任一坩埚机构20(以第一坩埚机构为例,另一个坩埚机构为第二坩埚机构)进行抽真空处理:其中在第一坩埚机构中,开启真空泵25对坩埚腔体21进行抽真空处理,真空抽到与蒸镀腔体的真空度相当时,连接阀22打开,坩埚腔体21、线源腔体11和蒸镀腔体连通,且同时处于高真空状态。
这时,加热完毕的第一坩埚机构,气态有机材料从坩埚腔体21流向线源腔体11,并经过导流板14的通孔141进入喷嘴12,随后气态有机材料从喷嘴12喷出,作用到OLED器件上。
最后,当第一坩埚机构20中的有机材料快消耗完时,第二坩埚机构20中的第二加热器23对处于真空状态下的坩埚腔体21加热完毕,有机材料蒸发为气态有机材料;
随后,关闭第一坩埚机构20的连接阀22,打开第二坩埚机构20的连接阀22,第二坩埚机构20开始工作;第一坩埚机构20充气破真空,打开坩埚腔体门,取出坩埚24,添加有机材料,关闭坩埚腔体11,抽坩埚腔体11真空,加热坩埚腔体11使有机材料变为气态有机材料,后处于待工作状态。
这样便完成了本实施例的操作过程。
请参照图3,图3为本申请的OLED蒸镀机的实施例的结构示意图。本申请还涉及一种OLED蒸镀机1000,其包括一蒸镀腔体200和一线源装置100。蒸镀腔体200用于蒸镀OLED作业。线源装置100用于喷涂气态有机材料。线源装置100包括一线源机构10和至少两个坩埚机构20。
线源机构10设置在蒸镀腔体200内且用于将气态有机材料喷镀到外置TFT基板上。线源机构10包括一线源腔体11。坩埚机构20设置在蒸镀腔体200外侧,用于提供气态有机材料。每个坩埚机构20均设置在线源机构10的外侧。每个坩埚机构20均包括一坩埚腔体21和一连接阀22。
本申请OLED蒸镀机1000的实施例通过至少两个坩埚机构20的设置,使得其中一个坩埚机构20工作,其他坩埚机构20处于待工作状态,这样的设置提高了设备的使用效率,减少了设备加料时间。另外,在OLED蒸镀机1000中,将坩埚机构20设置有蒸镀腔体200外,当需要进行更换坩埚机构20工作时,可避免打开蒸镀腔体200,减少了蒸镀腔体200内的污染,提高了生产良率。而且在OLED蒸镀机1000中,当需要添加有机材料时,只需打开没有材料的坩埚机构20,而无需打开蒸镀腔体2000,从而减少了开腔时间和节省了电和气能源。
其中OLED蒸镀机1000实施例的线源装置100和上述实施例的线源装置的结构一致,具体请参照上述实施例的内容,在此不再赘述。
OLED蒸镀机1000的操作过程和上述实施例的线源装置的操作过程相似或相同,具体请参照上述实施例的内容,在此也不再赘述。
相较于现有技术的线源装置及OLED蒸镀机,本申请的线源装置及OLED蒸镀机通过至少两个坩埚机构的设置,使得其中一个坩埚机构工作,其他坩埚机构处于待工作状态,这样的设置提高了设备的使用效率,减少了设备加料时间;另外,在OLED蒸镀机中,将坩埚机构设置有蒸镀腔体外,当需要进行更换坩埚机构工作时,可避免打开蒸镀腔体,减少了蒸镀腔体内的污染,提高了生产良率;而且在OLED蒸镀机中,当需要添加有机材料时,只需打开没有材料的坩埚机构,而无需打开蒸镀腔体,从而减少了开腔时间和节省了电和气能源。解决了现有的线源装置在真空蒸镀过程中,添加蒸镀材料时,耗时长且开腔体时容易污染的技术问题。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (20)
- 一种线源装置,其包括:一线源机构,用于将气态有机材料喷镀到TFT基板上,所述线源机构包括一线源腔体;以及至少两个坩埚机构,用于提供气态有机材料,每个所述坩埚机构均设置在所述线源机构的外侧,每个所述坩埚机构均包括一坩埚腔体和连接阀;所述连接阀设置在所述坩埚腔体和所述线源腔体之间,且用于将所述坩埚腔体和所述线源腔体隔开或连通;所述线源机构包括多个喷嘴,所述多个喷嘴连通于所述线源腔体且位于所述线源腔体的一侧,所述线源腔体的另一侧开设有至少两个开口,所述开口和所述坩埚机构一一对应,每个所述坩埚机构对应的固定设置在所述开口处;每个所述坩埚机构还包括第二加热器、坩埚和真空泵;所述第二加热器设置在所述坩埚腔体上,所述坩埚设置在所述坩埚腔体内,所述真空泵设置在所述坩埚腔体的外侧,所述真空泵用于对所述坩埚腔体抽真空或向所述坩埚腔体充气。
- 根据权利要求1所述的线源装置,其中,所述多个喷嘴呈阵列式排布,且相邻行之间的喷嘴相错设置。
- 根据权利要求1所述的线源装置,其中,所述线源机构还包括至少两个导流板,所述至少两个导流板相互间隔设置且设置在所述喷嘴和所述开口之间;每个导流板上均开设有通孔,所述通孔用于将所述坩埚机构内的气态有机材料导流至所述喷嘴;其中相邻的所述导流板之间的通孔相错设置;且自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的孔径递减。
- 根据权利要求3所述的线源装置,其中,自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的密度递增。
- 根据权利要求3所述的线源装置,其中,所述线源机构包括至少两个第一加热器,每个所述第一加热器用于加热一所述导流板;每个所述第一加热器包括电热丝,每个所述导流板上开设有沟道,所述电热丝设置在所述沟道内;所述电热丝从所述导流板的一端延伸至另一端,所述第一加热器设置有两个加热端,两个所述加热端分别位于同一所述导流板的两端且连接于所述电热丝。
- 根据权利要求1所述的线源装置,其中,所述线源机构还包括第一冷却层和第一隔热层,所述坩埚机构还包括第二冷却层和第二隔热层;所述第一冷却层设置在所述线源腔体的外壁上,所述第一隔热层设置在所述第一冷却层和所述线源腔体之间;所述第二冷却层设置在所述坩埚腔体的外壁上,所述第二隔热层设置在所述第二冷却层和所述坩埚腔体之间。
- 一种线源装置,其包括:一线源机构,用于将气态有机材料喷镀到TFT基板上,所述线源机构包括一线源腔体;以及至少两个坩埚机构,用于提供气态有机材料,每个所述坩埚机构均设置在所述线源机构的外侧,每个所述坩埚机构均包括一坩埚腔体和连接阀;所述连接阀设置在所述坩埚腔体和所述线源腔体之间,且用于将所述坩埚腔体和所述线源腔体隔开或连通。
- 根据权利要求7所述的线源装置,其中,所述线源机构包括多个喷嘴,所述多个喷嘴连通于所述线源腔体且位于所述线源腔体的一侧,所述线源腔体的另一侧开设有至少两个开口,所述开口和所述坩埚机构一一对应,每个所述坩埚机构对应的固定设置在所述开口处。
- 根据权利要求8所述的线源装置,其中,所述多个喷嘴呈阵列式排布,且相邻行之间的喷嘴相错设置。
- 根据权利要求8所述的线源装置,其中,所述线源机构还包括至少两个导流板,所述至少两个导流板相互间隔设置且设置在所述喷嘴和所述开口之间;每个导流板上均开设有通孔,所述通孔用于将所述坩埚机构内的气态有机材料导流至所述喷嘴;其中相邻的所述导流板之间的通孔相错设置;且自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的孔径递减。
- 根据权利要求10所述的线源装置,其中,自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的密度递增。
- 根据权利要求10所述的线源装置,其中,所述线源机构包括至少两个第一加热器,每个所述第一加热器用于加热一所述导流板;每个所述第一加热器包括电热丝,每个所述导流板上开设有沟道,所述电热丝设置在所述沟道内;所述电热丝从所述导流板的一端延伸至另一端,所述第一加热器设置有两个加热端,两个所述加热端分别位于同一所述导流板的两端且连接于所述电热丝。
- 根据权利要求7所述的线源装置,其中,每个所述坩埚机构还包括第二加热器、坩埚和真空泵;所述第二加热器设置在所述坩埚腔体上,所述坩埚设置在所述坩埚腔体内,所述真空泵设置在所述坩埚腔体的外侧,所述真空泵用于对所述坩埚腔体抽真空或向所述坩埚腔体充气。
- 根据权利要求7所述的线源装置,其中,所述线源机构还包括第一冷却层和第一隔热层,所述坩埚机构还包括第二冷却层和第二隔热层;所述第一冷却层设置在所述线源腔体的外壁上,所述第一隔热层设置在所述第一冷却层和所述线源腔体之间;所述第二冷却层设置在所述坩埚腔体的外壁上,所述第二隔热层设置在所述第二冷却层和所述坩埚腔体之间。
- 一种OLED蒸镀机,其包括:一蒸镀腔体,用于蒸镀OLED作业;以及一线源装置,用于喷涂气态有机材料,所述线源装置包括:一线源机构,设置在所述蒸镀腔体内且用于将气态有机材料喷镀到TFT基板上,所述线源机构包括一线源腔体;以及至少两个坩埚机构,设置在所述蒸镀腔体外侧,用于提供气态有机材料,每个所述坩埚机构均设置在所述线源机构的外侧,每个所述坩埚机构均包括一坩埚腔体和一连接阀;所述连接阀设置在所述坩埚腔体和所述线源腔体之间,且用于将所述坩埚腔体和所述线源腔体隔开或连通。
- 根据权利要求15所述的OLED蒸镀机,其中,所述线源机构包括多个喷嘴,所述多个喷嘴连通于所述线源腔体且位于所述线源腔体的一侧,所述线源腔体的另一侧开设有至少两个开口,所述开口和所述坩埚机构一一对应,每个所述坩埚机构对应的固定设置在所述开口处。
- 根据权利要求16所述的OLED蒸镀机,其中,所述多个喷嘴呈阵列式排布,且相邻行之间的喷嘴相错设置。
- 根据权利要求16所述的OLED蒸镀机,其中,所述线源机构还包括至少两个导流板,所述至少两个导流板相互间隔设置且设置在所述喷嘴和所述开口之间;每个导流板上均开设有通孔,所述通孔用于将所述坩埚机构内的气态有机材料导流至所述喷嘴;其中相邻的所述导流板之间的通孔相错设置;且自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的孔径递减。
- 根据权利要求18所述的OLED蒸镀机,其中,自所述开口的一侧向所述喷嘴的一侧,所述导流板上通孔的密度递增。
- 根据权利要求18所述的OLED蒸镀机,其中,所述线源机构包括至少两个第一加热器,每个所述第一加热器用于加热一所述导流板;每个所述第一加热器包括电热丝,每个所述导流板上开设有沟道,所述电热丝设置在所述沟道内;所述电热丝从所述导流板的一端延伸至另一端,所述第一加热器设置有两个加热端,两个所述加热端分别位于同一所述导流板的两端且连接于所述电热丝。
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| CN112030111B (zh) * | 2020-08-04 | 2025-01-10 | 福建华佳彩有限公司 | 一种真空腔体结构 |
| CN114318241B (zh) * | 2022-02-15 | 2024-08-13 | 福建华佳彩有限公司 | 一种可视化的线源坩埚装置及其材料监控方法 |
| CN117286454B (zh) * | 2023-08-24 | 2025-12-30 | 合肥维信诺科技有限公司 | 蒸发源、蒸镀装置以及蒸镀方法 |
| CN118222984B (zh) * | 2024-01-15 | 2024-10-18 | 北京北方鸿瑞科技有限公司 | 一种向下蒸发的线性蒸发源 |
| CN120210738A (zh) * | 2025-05-29 | 2025-06-27 | 杭州众能光电科技有限公司 | 一种蒸镀加热线源 |
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| WO2011074551A1 (ja) * | 2009-12-18 | 2011-06-23 | 平田機工株式会社 | 真空蒸着方法及び装置 |
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| CN104099571A (zh) * | 2013-04-01 | 2014-10-15 | 上海和辉光电有限公司 | 蒸发源组件和薄膜沉积装置和薄膜沉积方法 |
| CN108660420A (zh) * | 2018-07-25 | 2018-10-16 | 华夏易能(广东)新能源科技有限公司 | 真空蒸镀设备及蒸发源装置 |
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- 2018-12-29 CN CN201811634379.6A patent/CN109487216A/zh active Pending
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| WO2011074551A1 (ja) * | 2009-12-18 | 2011-06-23 | 平田機工株式会社 | 真空蒸着方法及び装置 |
| CN201678729U (zh) * | 2010-05-06 | 2010-12-22 | 东莞宏威数码机械有限公司 | 循环蒸镀机构 |
| CN101956174A (zh) * | 2010-05-06 | 2011-01-26 | 东莞宏威数码机械有限公司 | 循环蒸镀装置 |
| CN103361607A (zh) * | 2012-03-28 | 2013-10-23 | 日立造船株式会社 | 真空蒸镀装置和真空蒸镀装置的坩锅更换方法 |
| CN207596942U (zh) * | 2017-11-08 | 2018-07-10 | 深圳市柔宇科技有限公司 | 蒸镀装置 |
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