WO2020124816A1 - 触摸屏组件及电子设备 - Google Patents

触摸屏组件及电子设备 Download PDF

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Publication number
WO2020124816A1
WO2020124816A1 PCT/CN2019/078082 CN2019078082W WO2020124816A1 WO 2020124816 A1 WO2020124816 A1 WO 2020124816A1 CN 2019078082 W CN2019078082 W CN 2019078082W WO 2020124816 A1 WO2020124816 A1 WO 2020124816A1
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WO
WIPO (PCT)
Prior art keywords
touch screen
substrate
conductive layer
screen assembly
layer
Prior art date
Application number
PCT/CN2019/078082
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English (en)
French (fr)
Inventor
李武
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/471,480 priority Critical patent/US10996799B2/en
Publication of WO2020124816A1 publication Critical patent/WO2020124816A1/zh

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • This application relates to the field of display technology, in particular to a touch screen assembly and electronic equipment.
  • the transparent conductive oxide film is the main component of the capacitive touch screen.
  • the film is located in the display area and is generally etched by an indium tin oxide (ITO) film.
  • ITO indium tin oxide
  • the visible light reflection between the electrode (ITO) and the electrode gap in the display area There is a big difference from the transmission spectrum, so that the electrode and the gap are clearly visible, and the color is not neutral.
  • the larger the size of the touch screen the smaller the surface resistance of the ITO layer, the thicker the thickness of the ITO layer required, resulting in the more obvious color difference between the electrode and the gap, the visible light transmittance is also reduced, which seriously affects the visual effect and reduces the quality of the touch screen .
  • Embodiments of the present application provide a touch screen assembly and electronic equipment, which can improve light transmittance, reduce visual impact, and improve touch screen quality.
  • an embodiment of the present application provides a touch screen assembly, including:
  • a substrate, the first film layer is disposed on the substrate;
  • the refractive index difference between the substrate and the conductive layer is between 0 and 0.6.
  • the substrate includes a base material and a doped material.
  • the substrate includes a glass cover and a substrate glass.
  • the doping material includes any one of niobium and lanthanum.
  • the doping concentration of the doping material is 0.05% to 1%.
  • a lead layer is further provided on the periphery of the conductive layer.
  • the conductive layer is composed of a plurality of conductive glass arranged alternately, and the plurality of conductive glasses are obtained by etching the conductive layer.
  • the etching process includes any one of yellow light etching and laser etching.
  • the functional layer includes a mixture of silicon oxide and aluminum oxide, a mixture of silicon oxide and boron oxide, silicon oxide and oxide One or more of the mixture of phosphorus.
  • an embodiment of the present application further provides an electronic device, including: a housing and a touch screen component, the touch screen component is disposed on the housing, the touch screen includes:
  • a substrate, the first film layer is disposed on the substrate;
  • the refractive index difference between the substrate and the conductive layer is between 0 and 0.6.
  • the substrate includes a base material and a doped material.
  • the substrate includes a glass cover and a substrate glass.
  • the doping material includes any one of niobium and lanthanum.
  • the doping concentration of the doping material is 0.05% to 1%.
  • a lead layer is further provided on the periphery of the conductive layer.
  • the conductive layer is composed of a plurality of conductive glass arranged alternately, and the plurality of conductive glasses are obtained by etching the conductive layer.
  • the etching process includes any one of yellow light etching and laser etching.
  • the functional layer includes a mixture of silicon oxide and aluminum oxide, a mixture of silicon oxide and boron oxide, silicon oxide and oxide One or more of the mixture of phosphorus.
  • an embodiment of the present application further provides a touch screen assembly, which includes:
  • a substrate, the first film layer is disposed on the substrate;
  • the difference in refractive index between the substrate and the conductive layer is between 0 and 0.6, wherein the first film layer and the second film layer are composed of silicon dioxide, and the conductive layer is composed of indium tin oxide .
  • a touch screen assembly provided by an embodiment of the present application includes a first film layer, a conductive layer, and a second film layer sequentially stacked from bottom to top; a substrate, the first film layer is disposed on the substrate; wherein, the substrate
  • the refractive index difference with the conductive layer is between 0 and 0.6, thereby improving light transmittance, reducing visual impact, and improving touch screen quality.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 2 is a first schematic structural diagram of a touch screen assembly provided by an embodiment of the present application.
  • FIG. 3 is a top view of a conductive layer in a touch screen assembly provided by an embodiment of the present application.
  • FIG. 4 is a second schematic structural diagram of a touch screen assembly provided by an embodiment of the present application.
  • FIG. 5 is a third structural schematic diagram of a touch screen assembly provided by an embodiment of the present application.
  • FIG. 6 is a fourth schematic structural diagram of a touch screen assembly provided by an embodiment of the present application.
  • FIG. 7 is a flowchart of a method for manufacturing a touch screen assembly provided by an embodiment of the present application.
  • the transparent conductive oxide film is the main component of the capacitive touch screen.
  • the film is located in the display area and is generally etched by the ITO film.
  • the refractive index of the conductive film is different from the refractive index of the touch screen substrate.
  • the refractive index of the ITO film is generally 1.9-2.0, the refractive index of the touch screen substrate is about 1.5, resulting in a large difference between the visible light reflection and transmission spectra of the electrode (ITO) and the electrode gap in the display area, making the electrode and the gap clearly visible (color difference ⁇ a* and ⁇ b * is greater than 1) And the color is not neutral (color values ⁇ a* ⁇ and ⁇ b * ⁇ are greater than 1).
  • the larger the size of the touch screen the smaller the surface resistance of the ITO layer, the thicker the thickness of the ITO layer required, resulting in the more obvious color difference between the electrode and the gap, the visible light transmittance is also reduced, which seriously affects the visual effect and reduces the quality of the touch screen .
  • Shadow erasing and anti-reflection transparent conductive film is one of the main methods to solve the problem of chromatic aberration and improve the transmittance of visible light.
  • Anti-reflective and anti-reflective transparent conductive films are generally composed of high- and low-refractive-index transparent dielectric materials and ITO films on the outermost surface.
  • the high-refractive-index materials mainly include niobium pentoxide (Nb2O5) or titanium dioxide (TiO2) films.
  • Low-refractive-index materials are generally silicon dioxide (SiO2), magnesium fluoride (MgF2) films, etc.
  • the patent document "A kind of high-transmittance OGS glass” discloses a film system composed of Nb2O5 layer, SiO2 layer and ITO layer, etc.
  • the patent document of "Coating Layer” discloses that the film system is composed of Nb2O5 or TiO 2 layer, SiO 2 layer, and ITO layer.
  • the erasure film with Nb2O5 or TiO2 as the high refractive index layer has a high visible light transmittance, due to the high refractive index in the visible light band range of Nb2O5 or TiO2, a slight change in the thickness of the Nb2O5 or TiO 2 film layer will cause the film
  • the obvious change of the optical thickness makes the visible spectrum of the whole film change obviously, which in turn leads to the change of color. That is, the thickness of the film layer, especially the thickness of the high refractive index material, has an important influence on the color change of the film system.
  • the embodiments of the present application provide a touch screen assembly and an electronic device, which can improve the light transmittance, reduce the visual impact effect, and improve the quality of the touch screen.
  • Embodiments of the present application provide a touch screen component and an electronic device.
  • the touch screen component may be integrated in an electronic device, which includes but is not limited to a smart wearable device, a smart phone, a tablet computer, and a smart TV.
  • An embodiment of the present application provides an electronic device, including: a housing and a touch screen component, the touch screen component is disposed on the housing, the touch screen includes:
  • a substrate, the first film layer is disposed on the substrate;
  • the refractive index difference between the substrate and the conductive layer is between 0 and 0.6.
  • the substrate includes a base material and a doped material.
  • the base material includes a glass cover plate and a substrate glass.
  • the doping material includes any one of niobium and lanthanum.
  • the doping concentration of the doping material is 0.05% ⁇ 1%.
  • a lead layer is further provided on the periphery of the conductive layer.
  • the conductive layer is composed of a plurality of conductive glasses arranged alternately, and the plurality of conductive glasses are obtained by etching the conductive layer.
  • the etching process includes any one of yellow light etching and laser etching.
  • the upper and lower sides of the conductive layer are also provided with functional layers, and the functional layer includes one of a mixture of silicon oxide and aluminum oxide, a mixture of silicon oxide and boron oxide, and a mixture of silicon oxide and phosphorus oxide or Multiple.
  • FIG. 1 is a schematic structural diagram of an electronic device 1000 provided by an embodiment of the present application.
  • the electronic device 100 may include a touch screen assembly 100, a control circuit 200, and a housing 300.
  • the electronic device 1000 shown in FIG. 1 is not limited to the above, and it may also include other devices, such as a camera, an antenna structure, and a pattern unlocking module.
  • the touch screen assembly 100 is disposed on the housing 200.
  • the touch screen assembly 100 may be fixed to the housing 200, and the touch screen assembly 100 and the housing 300 form a closed space to accommodate devices such as the control circuit 200.
  • the housing 300 may be made of a flexible material, such as a plastic housing or a silicone housing.
  • the control circuit 200 is installed in the housing 300.
  • the control circuit 200 may be the main board of the electronic device 1000.
  • the control circuit 200 may be integrated with a battery, an antenna structure, a microphone, a speaker, a headphone jack, a universal serial bus interface, One, two or more of the functional components such as camera, distance sensor, ambient light sensor, receiver and processor.
  • the touch screen assembly 100 is installed in the housing 300, and at the same time, the touch screen assembly 100 is electrically connected to the control circuit 200 to form the display surface of the electronic device 1000.
  • the touch screen assembly 100 may include a display area and a non-display area.
  • the display area may be used to display the screen of the electronic device 1000 or for user touch manipulation.
  • the non-display area can be used to set various functional components.
  • FIG. 2 is a first schematic structural diagram of a touch screen assembly provided by an embodiment of the present application.
  • FIG. 3 is a top view of a conductive layer in the touch screen assembly provided by an embodiment of the present application.
  • the touch screen assembly 100 includes:
  • the first film layer 10, the conductive layer 20, and the second film layer 30 formed in this order are stacked from bottom to top;
  • a substrate 40, the first film layer 10 is disposed on the substrate 40; wherein,
  • the refractive index difference between the substrate 40 and the conductive layer 20 is between 0 and 0.6.
  • the conductive layer 20 is composed of a plurality of conductive glass 201 staggered, and the plurality of conductive glass is obtained by etching the conductive layer 20 through 201.
  • the refractive index of the normal substrate is about 1.5
  • the refractive index of the conductive layer 20 is about 2.1.
  • the first film layer 10 and the second film layer 30 are composed of silicon dioxide (SiO2), and the conductive layer 20 is composed of indium tin oxide (ITO).
  • SiO2 silicon dioxide
  • ITO indium tin oxide
  • the first film layer 10 and the second film layer 30 play an insulating role to prevent defects such as short circuits in the conductive layer 20.
  • the touch screen assembly 100 provided by an embodiment of the present application includes a first film layer 10, a conductive layer 20, and a second film layer 30 that are sequentially stacked from bottom to top; a substrate 40, and the first film layer 10 is disposed on the substrate 40 Above; wherein, the refractive index difference between the substrate 40 and the conductive layer 20 is between 0 ⁇ 0.6, thereby improving the light transmittance, reducing the visual impact effect, and improving the quality of the touch screen.
  • the substrate 40 includes a substrate and doped materials.
  • the substrate includes a glass cover 401 and a substrate glass 402.
  • the doping material includes any one of niobium and lanthanum.
  • a metal material including any one of niobium and lanthanum is doped on the substrate 40 to increase the reflectivity of the substrate 40.
  • the doping concentration of the doping material is 0.05% ⁇ 1%.
  • the doping concentration satisfying 0.05% to 1% can increase the refractive index of the substrate 40 and approach 2.1, so that the difference between the refractive index of the substrate 40 and the conductive layer 20 satisfies 0 to 0.6.
  • the etching process includes any one of yellow light etching and laser etching.
  • yellow photoetching is to protect the bottom layer of the photosensitive material (also called photoresist or photoresist) coated on the surface of the conductive layer 20 after exposure and development, and then perform etching to remove The process of filming and finally obtaining permanent graphics.
  • Laser etching is to engrave the surface of the object marking point by point after focusing with laser. The marked product will not fade due to environmental changes and artificial wear and tear, and the logo can be kept forever.
  • FIG. 4 is a second schematic structural diagram of a touch screen assembly provided by an embodiment of the present application.
  • the substrate 40 is a first glass cover 401, and the first glass cover 401 is used to protect the touch display component of the touch screen component 100 (not shown in the figure).
  • a glass solution structure OGS
  • the OGS structure is simple, light, thin, and light-transmissive. Due to the saving of a glass cover plate and the bonding process, the production cost is reduced and the product qualification rate is improved.
  • FIG. 5 is a third schematic structural diagram of a touch screen assembly provided by an embodiment of the present application.
  • the base 40 is a substrate glass 402.
  • a second glass cover 403 is further provided on the second film layer 30.
  • the base 40 is set as the substrate glass 402.
  • the difference between the substrate glass 402 and the first glass cover 401 is that the first glass cover 401 can protect the touch display components in the touch screen assembly 100, while the substrate glass 402 has no protection.
  • the substrate glass 402 serves as a carrier to support the touch screen assembly 100 and the substrate glass 402 is used as a sensor glass to improve the touch sensitivity of the touch screen assembly 100.
  • the substrate glass 402 forms a cover+glass structure (glass+glass, G+G) with the first film layer 10, the conductive layer 20, the second film layer 30, and the second glass cover plate 403.
  • the G+G structure has high hardness , Wear resistance, long service life, high touch sensitivity, etc., can improve the handling comfort of the electronic device 1000.
  • a lead layer 50 is further provided on the periphery of the conductive layer 20.
  • the lead layer 50 includes multiple leads, and the multiple leads are used to connect an integrated circuit (integrated) in a subsequent production process circuit, IC).
  • FIG. 6 is a fourth structural schematic diagram of a touch screen assembly provided by an embodiment of the present application.
  • a functional layer 60 is further provided on the upper and lower sides of the conductive layer 20, the functional layer 60 includes a mixture of silicon oxide and aluminum oxide, a mixture of silicon oxide and boron oxide, silicon oxide and phosphorus oxide One or more of the mixture.
  • the vertical thickness of the first glass cover 401 is 0.4 to 1 millimeter (mm), and the vertical thickness of the first film layer and the second film layer is 100 nanometers (nm) ⁇ 5 microns ( ⁇ m), the vertical thickness of the conductive layer 20 is 500 nm ⁇ 5 ⁇ m, the vertical thickness of the substrate glass is 0.2-1 mm, and the vertical thickness of the lead layer is 1 ⁇ m-50 ⁇ m.
  • the lead material includes but is not limited to copper (Cu), silver (Ag), and silver paste.
  • the touch screen assembly 100 provided by an embodiment of the present application includes a first film layer 10, a conductive layer 20, and a second film layer 30 that are sequentially stacked from bottom to top; a substrate 40, and the first film layer 10 is disposed on the substrate 40 Above; wherein, the refractive index difference between the substrate 40 and the conductive layer 20 is between 0 ⁇ 0.6, thereby improving light transmittance, reducing visual impact, and improving touch screen quality.
  • FIG. 7 is a flowchart of a method for manufacturing a touch screen assembly according to an embodiment of the present application.
  • the touch screen assembly described above, the preparation method of the touch screen assembly includes:
  • a substrate doping the substrate with a metal material to obtain a doped substrate, wherein the refractive index of the doped substrate is greater than 1.5;
  • the base includes a glass cover or substrate glass.
  • a lead layer is further provided on the conductive layer, and the lead layer is formed by etching the conductive layer.
  • the etching process includes any one of yellow light etching and laser time.
  • An embodiment of the present application further provides a touch screen assembly, which includes:
  • a substrate, the first film layer is disposed on the substrate;
  • the refractive index difference between the substrate and the conductive layer is between 0 and 0.6, wherein the first film layer and the second film layer are composed of silicon dioxide, and the conductive layer is composed of indium tin oxide .

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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

本申请公开了一种触摸屏组件及电子设备,触摸屏组件包括:从下至上依次层叠形成的第一膜层,导电层以及第二膜层;基底,所述第一膜层设置在所述基底上;其中,所述基底与所述导电层的折射率差值在0~0.6之间,从而提高光透过率,减小视觉影响效果,提高触摸屏品质。

Description

触摸屏组件及电子设备 技术领域
本申请涉及显示技术领域,具体涉及一种触摸屏组件及电子设备。
背景技术
近年来,触摸显示器技术发展突飞猛进,用户可直接在触摸显示器上进行操作,因此收到了越来越多的关注和应用。
现有技术中,透明导电氧化物薄膜为电容式触摸屏的主要部件,该薄膜位于显示区域,一般由氧化铟锡(ITO)膜蚀刻而成,显示区内电极(ITO)与电极缝隙的可见光反射与透射光谱有较大区别,使电极与缝隙清晰可见,并且颜色不呈中性。另外触摸屏尺寸越大,要求ITO 层的面电阻越小,所需的ITO 层的厚度就越厚,导致电极与缝隙的色差越明显,可见光透过率也降低,严重影响视觉效果,降低触摸屏品质。
因此,现有技术存在缺陷,急需改进。
技术问题
本申请实施例提供一种触摸屏组件及电子设备,可以提高光透过率,减小视觉影响效果,提高触摸屏品质。
技术解决方案
第一方面,本申请实施例提供一种触摸屏组件,包括:
从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
基底,所述第一膜层设置在所述基底上;其中,
所述基底与所述导电层的折射率差值在0~0.6之间。
在本申请所述的触摸屏组件中,所述基底包括基材及掺杂材料。
在本申请所述的触摸屏组件中,所述基材包括玻璃盖板及基板玻璃。
在本申请所述的触摸屏组件中,所述掺杂材料包括铌、镧中的任一种。
在本申请所述的触摸屏组件中,所述掺杂材料的掺杂浓度为0.05%~1%。
在本申请所述的触摸屏组件中,在所述导电层的周缘还设置有引线层。
在本申请所述的触摸屏组件中,所述导电层由多个交错排布的导电玻璃组成,所述多个导电玻璃通过对所述导电层进行蚀刻处理得到。
在本申请所述的触摸屏组件中,所述蚀刻处理包括黄光蚀刻、激光蚀刻中的任一种。
在本申请所述的触摸屏组件中,所述导电层上下两侧还设置有功能层,所述功能层包括硅的氧化物和氧化铝的混合物、氧化硅和氧化硼的混合物、氧化硅和氧化磷的混合物中的一种或多种。
第二方面,本申请实施例还提供一种电子设备,包括:壳体以及触摸屏组件,所述触摸屏组件设置在所述壳体上,所述触摸屏包括:
从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
基底,所述第一膜层设置在所述基底上;其中,
所述基底与所述导电层的折射率差值在0~0.6之间。
在本申请所述的电子设备中,所述基底包括基材及掺杂材料。
在本申请所述的电子设备中,所述基材包括玻璃盖板及基板玻璃。
在本申请所述的电子设备中,所述掺杂材料包括铌、镧中的任一种。
在本申请所述的电子设备中,所述掺杂材料的掺杂浓度为0.05%~1%。
在本申请所述的电子设备中,在所述导电层的周缘还设置有引线层。
在本申请所述的电子设备中,所述导电层由多个交错排布的导电玻璃组成,所述多个导电玻璃通过对所述导电层进行蚀刻处理得到。
在本申请所述的电子设备中,所述蚀刻处理包括黄光蚀刻、激光蚀刻中的任一种。
在本申请所述的电子设备中,所述导电层上下两侧还设置有功能层,所述功能层包括硅的氧化物和氧化铝的混合物、氧化硅和氧化硼的混合物、氧化硅和氧化磷的混合物中的一种或多种。
第三方面,本申请实施例还提供一种触摸屏组件,其包括:
从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
基底,所述第一膜层设置在所述基底上;其中,
所述基底与所述导电层的折射率差值在0~0.6之间,其中,所述第一膜层与所述第二膜层由二氧化硅组成,所述导电层由氧化铟锡组成。
有益效果
本申请实施例提供的触摸屏组件,包括从下至上依次层叠形成的第一膜层,导电层以及第二膜层;基底,所述第一膜层设置在所述基底上;其中,所述基底与所述导电层的折射率差值在0~0.6之间,从而提高光透过率,减小视觉影响效果,提高触摸屏品质。
附图说明
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的电子设备的结构示意图。
图2为本申请实施例提供的触摸屏组件的第一种结构示意图。
图3为本申请实施例提供的触摸屏组件中导电层的俯视图。
图4为本申请实施例提供的触摸屏组件的第二种结构示意图。
图5为本申请实施例提供的触摸屏组件的第三种结构示意图。
图6为本申请实施例提供的触摸屏组件的第四种结构示意图。
图7为本申请实施例提供的触摸屏组件的制备方法的流程图。
本发明的实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
现有技术中,透明导电氧化物薄膜为电容式触摸屏的主要部件,该薄膜位于显示区域,一般由ITO 膜蚀刻而成,导电膜的折射率与触摸屏基板的折射率不同,ITO 膜折射率一般为1.9-2.0,触摸屏基板的折射率约为1.5,导致显示区内电极(ITO)与电极缝隙的可见光反射与透射光谱有较大区别,使电极与缝隙清晰可见(色差Δa*与Δb *大于1),并且颜色不呈中性(颜色值∣a*∣与∣b *∣大于1)。另外触摸屏尺寸越大,要求ITO 层的面电阻越小,所需的ITO 层的厚度就越厚,导致电极与缝隙的色差越明显,可见光透过率也降低,严重影响视觉效果,降低触摸屏品质。
消影增透透明导电薄膜是解决色差问题、提高可见光透过率的主要手段之一。消影增透透明导电薄膜一般由依次叠加的高、低折射率透明介质材料和最外表面的ITO薄膜组成,其中高折射率材料主要包括五氧化二铌(Nb2O5)或者二氧化钛(TiO2)薄膜等,低折射率材料一般为二氧化硅(SiO2)、氟化镁(MgF2)薄膜等。例如《一种消影高透过率OGS 用玻璃》(公开号为CN103092416A)的专利文件公开了由Nb2O5层、SiO2层与ITO 层等组成的膜系,《一种消影且增透的导电镀膜层》(公开号为CN102779570A)的专利文件公开了由Nb2O5或者TiO 2层、SiO 2层、ITO 层组成膜系。
虽然由Nb2O5或TiO2作为高折射率层的消影膜可见光透过率较高,但是由于Nb2O5或TiO2可见光波段范围内折射率较高,导致Nb2O5或TiO 2膜层厚度微小的变化就会引起薄膜光学厚度明显的变化,使得整个膜系可见光波段光谱的明显变化,进而导致颜色的改变。即,膜层的厚度,特别是高折射率材料的厚度对于膜系颜色的变化有着重要的影响。为了获得消影效果达到要求的消影玻璃,高折射率材料的镀膜控制工艺要求非常苛刻(对于Nb2O5或TiO2膜层厚度变化小于±0.5纳米),工艺难度大;另外Nb、Ti材料的金属、陶瓷靶材价格较高,也增加了消影增透透明导电玻璃的制造成本。因此,本申请实施例提供一种触摸屏组件及电子设备,可以提高光透过率,减小视觉影响效果,提高触摸屏品质。
本申请实施例提供一种触摸屏组件及电子设备,该触摸屏组件可以集成在电子设备中,该电子设备包括但不限于智能穿戴设备、智能手机、平板电脑、智能电视。
本申请实施例提供一种电子设备,包括:壳体以及触摸屏组件,所述触摸屏组件设置在所述壳体上,所述触摸屏包括:
从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
基底,所述第一膜层设置在所述基底上;其中,
所述基底与所述导电层的折射率差值在0~0.6之间。
其中,所述基底包括基材及掺杂材料。
其中,所述基材包括玻璃盖板及基板玻璃。
其中,所述掺杂材料包括铌、镧中的任一种。
其中,所述掺杂材料的掺杂浓度为0.05%~1%。
其中,在所述导电层的周缘还设置有引线层。
其中,所述导电层由多个交错排布的导电玻璃组成,所述多个导电玻璃通过对所述导电层进行蚀刻处理得到。
其中,所述蚀刻处理包括黄光蚀刻、激光蚀刻中的任一种。
其中,所述导电层上下两侧还设置有功能层,所述功能层包括硅的氧化物和氧化铝的混合物、氧化硅和氧化硼的混合物、氧化硅和氧化磷的混合物中的一种或多种。
请参阅图1,图1为本申请实施例提供的电子设备1000的结构示意图。该电子设备100可以包括触摸屏组件100、控制电路200、以及壳体300。需要说明的是,图1所示的电子设备1000并不限于以上内容,其还可以包括其他器件,比如还可以包括摄像头、天线结构、纹解锁模块等。
其中,触摸屏组件100设置于壳体200上。
在一些实施例中,触摸屏组件100可以固定到壳体200上,触摸屏组件100和壳体300形成密闭空间,以容纳控制电路200等器件。
在一些实施例中,壳体300可以为由柔性材料制成,比如为塑胶壳体或者硅胶壳体等。
其中,该控制电路200安装在壳体300中,该控制电路200可以为电子设备1000的主板,控制电路200上可以集成有电池、天线结构、麦克风、扬声器、耳机接口、通用串行总线接口、摄像头、距离传感器、环境光传感器、受话器以及处理器等功能组件中的一个、两个或多个。
其中,该触摸屏组件100安装在壳体300中,同时,该触摸屏组件100电连接至控制电路200上,以形成电子设备1000的显示面。该触摸屏组件100可以包括显示区域和非显示区域。该显示区域可以用来显示电子设备1000的画面或者供用户进行触摸操控等。该非显示区域可用于设置各种功能组件。
请参阅图2及图3,图2为本申请实施例提供的触摸屏组件的第一种结构示意图,图3为本申请实施例提供的触摸屏组件中导电层的俯视图,该触摸屏组件100包括:
从下至上依次层叠形成的第一膜层10,导电层20以及第二膜层30;
基底40,所述第一膜层10设置在所述基底40上;其中,
所述基底40与所述导电层20的折射率差值在0~0.6之间。
在一些实施例中,所述导电层20由多个交错排布的导电玻璃201组成,所述多个导电玻璃通201过对所述导电层20进行蚀刻处理得到。
可以理解,正常基底的折射率为1.5左右,导电层20的折射率为2.1左右,然而导电层20存在多个镂空区域,这就会导致在用户使用电子设备1000时会看到导电层20上的电极,产生视觉反差。而为了消除这种视觉反差,保证基底40的折射率与导电层20的折射率差异值在0~0.6之间即可,多个镂空区域为除了导电玻璃201以外的区域。
在一些实施例中,所述第一膜层10与所述第二膜层30由二氧化硅(SiO2)组成,所述导电层20由氧化铟锡(ITO)组成。
其中,第一膜层10与第二膜层30起到绝缘作用,防止导电层20内部产生短路等不良现象。
本申请实施例提供的触摸屏组件100,包括从下至上依次层叠形成的第一膜层10,导电层20以及第二膜层30;基底40,所述第一膜层10设置在所述基底40上;其中,所述基底40与所述导电层20的折射率差值在0~0.6之间,从而提高光透过率,减小视觉影响效果,提高触摸屏品质。
在一些实施例中,所述基底40包括基材及掺杂材料。
在一些实施例中,所述基材包括玻璃盖板401及基板玻璃402.
在一些实施例中,所述掺杂材料包括铌、镧中的任一种。
可以理解,本申请在基底40上掺杂包括铌、镧中的任一种的金属材料以提高基底40的反射率。
在一些实施例中,所述掺杂材料的掺杂浓度为0.05%~1%。
其中,掺杂浓度满足0.05%~1%可以使基底40的折射率提高,并趋近于2.1,以使基底40与导电层20的折射率差值满足在0~0.6之间。
在一些实施例中,所述蚀刻处理包括黄光蚀刻、激光蚀刻中的任一种。
其中,黄光蚀刻为通过对涂覆在导电层20表面的光敏性物质(又称为光刻胶或光阻),经曝光、显影后留下的部分对底层起保护作用,然后进行蚀刻脱膜并最终获得永久性图形的过程。激光蚀刻为用激光聚焦后将物体标记的表面进行逐点雕刻,标记后的产品不会因环境变化和人为磨损而消退,标识可以永久保持。
在一些实施例中,如图4所示,图4为本申请实施例提供的触摸屏组件的第二种结构示意图。所述基底40为第一玻璃盖板401,所述第一玻璃盖板401用于保护所述触摸屏组件100的触控显示组件(图中未示出)。从而形成一种玻璃溶液结构(one glass solution,OGS),OGS结构简单,轻、薄、透光性好,由于节约一片玻璃盖板以及贴合工序,降低了生产成本并提高了产品合格率。
在一些实施例中,如图5所示,图5为本申请实施例提供的触摸屏组件的第三种结构示意图。所述基底40为基板玻璃402。
在一些实施例中,所述在所述第二膜层30上还设置有一第二玻璃盖板403。
其中,将基底40设置为基板玻璃402,基板玻璃402与第一玻璃盖板401的区别在于,第一玻璃盖板401可以保护触摸屏组件100内的触控显示组件,而基板玻璃402不存在保护作用,基板玻璃402作为载体支撑所述触摸屏组件100并且,基板玻璃402作为传感器玻璃使用以提高触摸屏组件100的触摸灵敏度。
基板玻璃402与第一膜层10、导电层20、第二膜层30以及第二玻璃盖板403形成盖板+盖板结构(glass+glass,G+G),G+G结构具备硬度高、耐磨损、使用寿命长、触摸灵敏度高等特点,能够提高电子设备1000的操控舒适度。
在一些实施例中,在所述导电层20的周缘还设置有引线层50。
其中,所述引线层50包含多条引线,所述多条引线用于在后续生产制程中连接集成电路(integrated circuit,IC)。
如图6所示,图6为本申请实施例提供的触摸屏组件的第四种结构示意图。在一些实施例中,所述导电层20上下两侧还设置有功能层60,所述功能层60包括硅的氧化物和氧化铝的混合物、氧化硅和氧化硼的混合物、氧化硅和氧化磷的混合物中的一种或多种。
在一些实施例中,所述第一玻璃盖板401的竖直厚度为0.4~1毫米(mm),所述第一膜层与所述第二膜层的竖直厚度为100纳米(nm)~5微米(μm),所述导电层20的竖直厚度为500nm~5μm,所述基板玻璃的竖直厚度为0.2~1mm,所述引线层的竖直厚度为1μm~50μm。
在一些实施例中,所述引线材料包括但不限于铜(Cu)、银(Ag)以及银浆。
本申请实施例提供的触摸屏组件100,包括从下至上依次层叠形成的第一膜层10,导电层20以及第二膜层30;基底40,所述第一膜层10设置在所述基底40上;其中,所述基底40与所述导电层20的折射率差值在0~0.6之间,从而提高光透过率,减小视觉影响效果,提高触摸屏品质。
本申请实施例还提供一种触摸屏组件的制备方法,如图7所示,图7为本申请实施例提供的触摸屏组件的制备方法的流程图,所述触摸屏组件的制备方法用于制备如上所述的触摸屏组件,所述触摸屏组件的制备方法包括:
110、提供一基底,在所述基底内掺杂金属材料得到掺杂后的基底,其中所述掺杂后的基底折射率大于1.5;
其中,所述基底包括玻璃盖板或基板玻璃。
120、在所述掺杂后的基底上依次沉积第一膜层、导电层以及第二膜层以形成所述触摸屏组件。
其中,在所述导电层上还设置有一引线层,所述引线层通过对所述导电层进行蚀刻处理形成。
其中,所述蚀刻处理包括黄光蚀刻、激光时刻中的任一种。
本申请实施例还提供一种触摸屏组件,其包括:
从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
基底,所述第一膜层设置在所述基底上;其中,
所述基底与所述导电层的折射率差值在0~0.6之间,其中,所述第一膜层与所述第二膜层由二氧化硅组成,所述导电层由氧化铟锡组成。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种触摸屏组件及电子设备进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (19)

  1. 一种触摸屏组件,其包括:
    从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
    基底,所述第一膜层设置在所述基底上;其中,
    所述基底与所述导电层的折射率差值在0~0.6之间。
  2. 根据权利要求1所述的触摸屏组件,其中所述基底包括基材及掺杂材料。
  3. 根据权利要求2所述的触摸屏组件,其中所述基材包括玻璃盖板及基板玻璃。
  4. 根据权利要求2所述的触摸屏组件,其中所述掺杂材料包括铌、镧中的任一种。
  5. 根据权利要求4所述的触摸屏组件,其中所述掺杂材料的掺杂浓度为0.05%~1%。
  6. 根据权利要求1所述的触摸屏组件,其中在所述导电层的周缘还设置有引线层。
  7. 根据权利要求6所述的触摸屏组件,其中所述导电层由多个交错排布的导电玻璃组成,所述多个导电玻璃通过对所述导电层进行蚀刻处理得到。
  8. 根据权利要求7所述的触摸屏组件,其中所述蚀刻处理包括黄光蚀刻、激光蚀刻中的任一种。
  9. 根据权利要求1所述的触摸屏组件,其中所述导电层上下两侧还设置有功能层,所述功能层包括硅的氧化物和氧化铝的混合物、氧化硅和氧化硼的混合物、氧化硅和氧化磷的混合物中的一种或多种。
  10. 一种电子设备,其包括:壳体以及触摸屏组件,所述触摸屏组件设置在所述壳体上,所述触摸屏组件包括:
    从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
    基底,所述第一膜层设置在所述基底上;其中,
    所述基底与所述导电层的折射率差值在0~0.6之间。
  11. 根据权利要求10所述的电子设备,其中所述基底包括基材及掺杂材料。
  12. 根据权利要求11所述的电子设备,其中所述基材包括玻璃盖板及基板玻璃。
  13. 根据权利要求11所述的电子设备,其中所述掺杂材料包括铌、镧中的任一种。
  14. 根据权利要求13所述的电子设备,其中所述掺杂材料的掺杂浓度为0.05%~1%。
  15. 根据权利要求10所述的电子设备,其中在所述导电层的周缘还设置有引线层。
  16. 根据权利要求15所述的电子设备,其中所述导电层由多个交错排布的导电玻璃组成,所述多个导电玻璃通过对所述导电层进行蚀刻处理得到。
  17. 根据权利要求16所述的电子设备,其中所述蚀刻处理包括黄光蚀刻、激光蚀刻中的任一种。
  18. 根据权利要求10所述的触摸屏组件,其中所述导电层上下两侧还设置有功能层,所述功能层包括硅的氧化物和氧化铝的混合物、氧化硅和氧化硼的混合物、氧化硅和氧化磷的混合物中的一种或多种。
  19. 一种触摸屏组件,其包括:
    从下至上依次层叠形成的第一膜层,导电层以及第二膜层;
    基底,所述第一膜层设置在所述基底上;其中,
    所述基底与所述导电层的折射率差值在0~0.6之间,其中,所述第一膜层与所述第二膜层由二氧化硅组成,所述导电层由氧化铟锡组成。
PCT/CN2019/078082 2018-12-19 2019-03-14 触摸屏组件及电子设备 WO2020124816A1 (zh)

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