WO2020118937A1 - Preparation method for black matrix and display device - Google Patents

Preparation method for black matrix and display device Download PDF

Info

Publication number
WO2020118937A1
WO2020118937A1 PCT/CN2019/078210 CN2019078210W WO2020118937A1 WO 2020118937 A1 WO2020118937 A1 WO 2020118937A1 CN 2019078210 W CN2019078210 W CN 2019078210W WO 2020118937 A1 WO2020118937 A1 WO 2020118937A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
intermediate layer
photoresist
photoresist layer
Prior art date
Application number
PCT/CN2019/078210
Other languages
French (fr)
Chinese (zh)
Inventor
陈黎暄
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020118937A1 publication Critical patent/WO2020118937A1/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment

Definitions

  • the invention relates to the field of liquid crystal display, in particular to a method for preparing a black matrix and a display device.
  • the LCD display can reduce the reflection of ambient light on the surface of the display by reducing the reflection rate, so that the actual contrast perceived by the human eye in a bright environment increases, and the image quality effect is enhanced.
  • the black matrix prepared on the inner side of the glass of the upper substrate also generates light reflection. By improving the reflection of the black matrix, it is helpful to reduce the overall reflectivity of the LCD and improve the contrast.
  • the existing patent proposes a method of adding an organic or inorganic refractive index intermediate layer between the ordinary black matrix and the glass substrate to reduce the reflectivity of the black matrix.
  • an organic or inorganic refractive index intermediate layer between the ordinary black matrix and the glass substrate to reduce the reflectivity of the black matrix.
  • the intermediate layer material may cause absorption of transmitted light; if the intermediate layer
  • the material uses inorganic materials such as silicon oxynitride, etc., to make it patterned to be consistent with the black matrix, then a dry etching process needs to be added, which increases the complexity of preparation.
  • the object of the present invention is to provide a method for preparing a black matrix, which can remove the steps of the dry etching process of the intermediate layer.
  • the object of the present invention is to provide a method for preparing a black matrix, which can remove the steps of the dry etching process of the intermediate layer.
  • the present invention provides a method for preparing a black matrix, comprising the following steps: providing a substrate; coating a layer of refractive index temperature control material on the surface of the substrate; Pre-bake to form an intermediate layer; coat a photoresist material on the intermediate layer to form a photoresist layer; place a mask plate above the photoresist layer or below the substrate; use ultraviolet light
  • the photoresist layer is irradiated from top to bottom, or the substrate is irradiated from bottom to top, so that the intermediate layer and the photoresist layer are simultaneously cured and developed; the mask plate is removed and the substrate is baked so that The intermediate layer is patterned synchronously with the photoresist layer.
  • the substrate is provided with a first alignment mark; in the step of placing a mask plate above the photoresist layer or below the substrate, the mask plate A second alignment mark is provided, and the second alignment mark is in one-to-one correspondence with the first alignment mark, respectively.
  • first alignment marks are provided at four corners of the substrate, and the second alignment marks are provided at four corners of the mask plate.
  • the refractive index of the intermediate layer is 1.45 to 1.9, and the coating thickness of the intermediate layer is 35 to 85 nm.
  • the substrate is a color filter substrate or a glass substrate;
  • the refractive index temperature control material is a siloxane-based polymer.
  • the photoresist material includes a negative photoresist and a metal halide
  • the photoresist layer is a black matrix layer made of black photoresist.
  • the baking temperature is 70 ⁇ 110°C; in the step of removing the mask plate and baking the substrate, the baking temperature It is 230 ⁇ 300°C.
  • the intermediate layer and the photoresist layer are both positive photoresists, or the intermediate layer and the photoresist layer are both negative photoresists.
  • Another object of the present invention is to provide a display device including a substrate, an intermediate layer and a photoresist layer, a substrate, a photoresist layer and an intermediate layer, the intermediate layer being disposed between the substrate and the photoresist layer
  • the intermediate layer and the photoresist layer are simultaneously cured and developed on one side of the substrate, and the pattern of the intermediate layer corresponds to the pattern of the photoresist layer.
  • a first alignment mark is provided on the substrate, and a second alignment mark is provided on the mask plate, and the second alignment mark corresponds to the first alignment mark respectively.
  • the invention provides a method for preparing a black matrix, and the UV layer is used to pattern the intermediate layer together with the black matrix, thereby reducing the dry etching process of the intermediate layer and improving the manufacturing efficiency.
  • FIG. 1 is a flowchart of a method for preparing a black matrix in the present invention
  • FIG. 2 is a schematic structural diagram of a substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a substrate and an intermediate layer according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a substrate, an intermediate layer, and a photoresist layer according to an embodiment of the present invention
  • FIG. 5 is a schematic view of the structure of the mask plate illumination according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the first alignment mark of the substrate of FIG. 2;
  • FIG. 7 is a schematic diagram of the second alignment mark on the mask plate of FIG. 5;
  • FIG. 8 is a schematic diagram of the structure of the black matrix prepared by the present invention.
  • FIG. 9 is a schematic view of the structure of the present invention provides ultraviolet exposure from bottom to top;
  • 10 is a display device provided by the present invention.
  • the present invention provides a method for preparing a black matrix, including the following steps S1 to S7.
  • a substrate 21 is first provided, and a first alignment mark 211 is provided on the substrate 21.
  • a color film substrate or a common glass substrate can be used.
  • the added intermediate layer and the black matrix are patterned at once, which is used to divide adjacent color groups, block the color gaps, prevent light leakage or color mixing; and the intermediate layer can reduce the reflectivity of the black matrix, Thereby reducing the reflectivity of the panel and the reflectivity of the entire LCD, it can also share the difficulty and cost of polarizer surface treatment.
  • the substrate 21 is rectangular, and the first alignment marks 211 are provided at the four corners of the substrate 21.
  • the shape of the first alignment mark 211 may be rectangular or circular, and the present invention is preferably a circular mark.
  • the first alignment mark 211 can provide a position reference for coating and mask plate placement in other layers of the present invention.
  • the refractive index temperature control material is a siloxane-based material.
  • the material is generally a pure metal salt monomer such as Si(OR)4 or Ti(OR)4.
  • the refractive index characteristic of the material changes with temperature.
  • the refractive index of the layer is 1.45 ⁇ 1.9, and its coating thickness is 35 ⁇ 85nm.
  • the refractive index may be 1.45, 1.50, 1.6, 1.7, or 1.90, and the thickness of the coating intermediate layer 22 may be 35 nm, 45 nm, 55 nm, 75 nm, or 85 nm.
  • the third step is to pre-bake the refractive index temperature control material to form an intermediate layer 22.
  • the material to be coated is a transparent gel, so the material is pre-baked to stabilize it and form the intermediate layer 22, so as to facilitate the subsequent steps.
  • the pre-baking temperature may be 70°C, 80°C, 90°C or 110°C.
  • a photoresist material is coated on the intermediate layer 22 to form a photoresist layer 23.
  • the photoresist material is mainly negative photoresist and metal halide.
  • the photoresist layer 23 is a black matrix made of black photoresist.
  • the photoresist layer 23 may also be called a black matrix layer.
  • the thickness of the coated photoresist layer 23 is 0.8um, 1.0um, 1.4um or 1.5um.
  • the metal halide is silver bromide or silver chloride, which will turn black during exposure to form a black matrix.
  • the negative photoresist is the main component of the photoresist system.
  • the metal halide is silver bromide, which decomposes to form metal particles after exposure.
  • the metal particles will appear as small particles Black, with high optical density value.
  • a mask plate 24 is placed above the photoresist layer 23 or below the substrate 21. As shown in FIG. 7, the mask plate is provided with a second alignment mark 241.
  • the mask plate 24 has a plurality of mask plate through holes. The pattern formed by the plurality of mask plate through holes is consistent with the pattern of the photoresist layer 23.
  • the second alignment marks 241 are provided at four corners of the mask plate. When the mask plate 24 is installed, the second alignment marks 241 correspond to the first alignment marks 211 one-to-one.
  • the photoresist characteristics of the intermediate layer 22 are the same as the photoresist characteristics of the photoresist layer 23, which can be eliminated by a developer after being exposed to ultraviolet rays.
  • the intermediate layer 22 and the photoresist layer 23 in the illuminated area are insoluble in the developer at the same time, and the unexposed area can be removed with the developer, so that the intermediate layer 22 and the photoresist layer 23 form the same pattern, and the two simultaneously cure development.
  • the exposed area can be eliminated with the developer, resulting in that the photoresist layer 23 and the intermediate layer 22 can be eliminated by the developer at the same time, which can reduce the previous step of photolithography of the intermediate layer separately.
  • the ultraviolet light can be selected to irradiate from above the photoresist layer 23, or it can be irradiated from below the substrate 21, which does not affect the results of the present invention. Illuminate above 23.
  • the mask plate 24 is removed and the substrate is baked, so that the intermediate layer 22 and the photoresist layer 23 are patterned synchronously.
  • the mask plate 24 is selected as a positive photoresist material, which can be eliminated with a developing solution after being exposed to light. Finally, the black matrix structure shown in FIG. 8 can be obtained.
  • the baking temperature is only to preliminarily shape the intermediate layer 22, and the refractive index of the intermediate layer 22 is not optimized, it needs to be baked twice to make the refractive index of the intermediate layer 22 further Optimization, while making the intermediate layer 22 and the photoresist layer 23 form the same pattern, so that the two are simultaneously patterned.
  • the temperature range of the secondary baking is 230 to 300°C, preferably 230°C, 250°C, 270°C, 300°C.
  • the layer 23 is stably fixed to the substrate, forming the structure shown in FIG. 5.
  • the secondary baking can make the refractive index of the intermediate layer 22 reach the range of 1.45 to 1.9, which can further reduce the reflection of the black matrix, reduce the reflection characteristics of the overall LCD, and can also share the difficulty and cost of polarizer surface treatment.
  • the intermediate layer takes a siloxane-based material as an example, the material is mainly a pure metal salt monomer such as Si(OR)4 or Ti(OR)4, and the pure metal salt monomer is first polymerized
  • the reaction produces an inorganic polymer or an organic-inorganic hybrid polymer siloxane system.
  • the molecular structure of the polymer is: then the polymer is applied to the substrate to form a glue layer, which is finally stabilized by ultraviolet baking
  • the molecular structure of the material and the refractive index of the material can be controlled within 1.45 ⁇ 1.9.
  • the molecular structure formula of the intermediate layer finally formed is as follows.
  • the substrate 21 since the baking temperature is relatively high, the substrate 21 should have high temperature resistance characteristics, and it should not affect its normal operation.
  • the photoresist characteristics of the intermediate layer 22 and the photoresist layer 23 should be the same. Negative photoresist is used in the present invention. This feature cannot be eliminated by the developer after exposure. In other embodiments, positive photoresist can be used, which does not affect the results of the present invention.
  • the present invention provides a display device 20, which includes a substrate 21, an intermediate layer 22, an optical group layer 23, a colored layer 29, an ITO layer 25, a liquid crystal layer 26, and a thin film transistor Array 27 and a cover 28.
  • the intermediate layer 22 is provided on the side of the substrate 21, and the photoresist layer 23 is provided on the side of the intermediate layer 22 away from the substrate 21; the intermediate layer 22 and the photoresist layer 23 are simultaneously cured and developed, and synchronized Patterned.
  • the material of the intermediate layer 22 is a refractive index temperature control material of a siloxane-based polymer; the material of the photoresist layer 23 includes a negative photoresist and a metal halide.
  • the colored layer 29 is alternately provided on the substrate with the intermediate layer 22 and the photoresist layer 23.
  • the ITO layer 25 is provided on the side of the colored layer 29 and the photoresist layer 23 away from the intermediate layer 22.
  • the substrate 21 is arranged opposite to the cover plate 28 with a gap (not shown) between them to fill the liquid crystal layer 26.
  • the thin film transistor array 27 is disposed on the side of the cover plate 28 adjacent to the liquid crystal layer 27.
  • the ITO layer 25 cooperates with the thin film transistor array 27 to control whether the liquid crystal molecules of the liquid crystal layer 26 rotate with an electric field, thereby controlling the passing of light from the backlight system (not shown).
  • the light passing through the liquid crystal layer 26 is incident on the colored layer 29 and the photoresist layer 23, and the colored layer 29 only passes through three colors of red, blue, and green.
  • the photoresist layer 23 is used to block the pipeline between the colored layers 29 to prevent light leakage
  • the characteristics of the intermediate layer 22 and the photoresist layer 23 are the same to further prevent light leakage.
  • a first alignment mark 211 (marked in FIG. 6) is provided on the substrate 21, and the first alignment mark 211 is provided at four corners of the substrate 21.
  • the mask plate 24 is provided with second alignment marks 241 (marked in FIG. 7 ), the second alignment marks 241 are provided at four corners of the mask plate 24 and are respectively aligned with the first The marks 211 correspond to each other.
  • the intermediate layer 22 and the photoresist layer 23 are simultaneously cured and developed, and patterned simultaneously, and finally the mask plate is removed.
  • the display device reduces the dry etching process of the intermediate layer 22 and increases the efficiency of the process flow.

Abstract

A preparation method for a black matrix and a display device (20), comprising: providing a substrate (21) (S1); coating the upper surface of the substrate (21) with a layer of refractive index temperature control materials (S2); pre-baking the refractive index temperature control materials to form an intermediate layer (22) (S3); coating the intermediate layer (22) with a photoresist material to form a photoresist layer (23) (S4); placing a mask (24) above the photoresist layer (23) or below the substrate (21) (S5); irradiating the photoresist layer (23) by using ultraviolet rays from top to bottom or irradiating the substrate (21) from bottom to top to achieve simultaneous curing and developing of the intermediate layer (22) and the photoresist layer (23) (S6); removing the mask (24) and baking the substrate (21) to achieve simultaneous patterning of the intermediate layer (22) and the photoresist layer (23) (S7). In this way, the preparation efficiency can be improved.

Description

一种黑色矩阵的制备方法及显示装置Black matrix preparation method and display device 技术领域Technical field
本发明涉及液晶显示领域,特别是一种黑色矩阵的制备方法及显示装置。The invention relates to the field of liquid crystal display, in particular to a method for preparing a black matrix and a display device.
背景技术Background technique
LCD显示器可以通过降低反光率来降低环境光在显示器表面的反射,使得在亮环境下人眼感知到的实际对比度上升,增强画质效果。现有的LCD的上表面,除了偏光片的反射以外,制备于上基板玻璃内侧的黑色矩阵也会产生反光。通过改善黑色矩阵的反光有利于降低LCD整体的反射率,提升对比度。The LCD display can reduce the reflection of ambient light on the surface of the display by reducing the reflection rate, so that the actual contrast perceived by the human eye in a bright environment increases, and the image quality effect is enhanced. In addition to the reflection of the polarizer on the upper surface of the existing LCD, the black matrix prepared on the inner side of the glass of the upper substrate also generates light reflection. By improving the reflection of the black matrix, it is helpful to reduce the overall reflectivity of the LCD and improve the contrast.
现有专利提出在普通黑色矩阵与玻璃基板之间增加一层有机或者无机折射率中间层的方法来降低黑色矩阵反射率的方法。但制作过程中存在下列问题:如果采用整面的中间层,其对彩膜基板上黑色矩阵以外区域的反射率和透过率可能存在影响,中间层材料可能导致透射光的吸收;如果中间层材料采用无机物如氮氧化硅等,使其图案化地与黑色矩阵一致,则需要增加一道干刻制程,增加了制备的复杂度。The existing patent proposes a method of adding an organic or inorganic refractive index intermediate layer between the ordinary black matrix and the glass substrate to reduce the reflectivity of the black matrix. However, there are the following problems in the production process: if a full-faced intermediate layer is used, it may have an impact on the reflectance and transmittance of the area outside the black matrix on the color filter substrate, and the intermediate layer material may cause absorption of transmitted light; if the intermediate layer The material uses inorganic materials such as silicon oxynitride, etc., to make it patterned to be consistent with the black matrix, then a dry etching process needs to be added, which increases the complexity of preparation.
技术问题technical problem
本发明的目的在于,提供一种黑色矩阵的制备方法,可以去除了中间层的干刻制程的步骤。The object of the present invention is to provide a method for preparing a black matrix, which can remove the steps of the dry etching process of the intermediate layer.
技术解决方案Technical solution
本发明的目的在于,提供一种黑色矩阵的制备方法,可以去除了中间层的干刻制程的步骤。The object of the present invention is to provide a method for preparing a black matrix, which can remove the steps of the dry etching process of the intermediate layer.
为解决上述技术问题,本发明提供一种黑色矩阵的制备方法,包括如下步骤:提供一基板;在所述基板上表面涂布一层折射率温控材料;对所述折射率温控材料进行预烘烤,形成一中间层;在所述中间层上涂布一种光阻材料,形成一光阻层;将一掩膜板放置在所述光阻层上方或所述基板下方;利用紫外线自上而下照射所述光阻层,或者,自下而上照射所述基板,使得所述中间层与所述光阻层同步固化显影;去除掩膜板并烘烤所述基板,使得所述中间层与所述光阻层同步图案化。In order to solve the above technical problems, the present invention provides a method for preparing a black matrix, comprising the following steps: providing a substrate; coating a layer of refractive index temperature control material on the surface of the substrate; Pre-bake to form an intermediate layer; coat a photoresist material on the intermediate layer to form a photoresist layer; place a mask plate above the photoresist layer or below the substrate; use ultraviolet light The photoresist layer is irradiated from top to bottom, or the substrate is irradiated from bottom to top, so that the intermediate layer and the photoresist layer are simultaneously cured and developed; the mask plate is removed and the substrate is baked so that The intermediate layer is patterned synchronously with the photoresist layer.
进一步地,在提供一基板的步骤中,所述基板上设置有第一对位标记;在将掩膜板放置在所述光阻层上方或所述基板下方的步骤中,所述掩膜板设置有第二对位标记,所述第二对位标记分别与所述第一对位标记一一对应。Further, in the step of providing a substrate, the substrate is provided with a first alignment mark; in the step of placing a mask plate above the photoresist layer or below the substrate, the mask plate A second alignment mark is provided, and the second alignment mark is in one-to-one correspondence with the first alignment mark, respectively.
进一步地,所述第一对位标记设置于基板的四个角落,所述第二对位标记设置于掩膜板的四个角落。Further, the first alignment marks are provided at four corners of the substrate, and the second alignment marks are provided at four corners of the mask plate.
进一步地,在所述基板上表面涂布一层折射率温控材料的步骤中,所述中间层的折射率为1.45~1.9,所述中间层的涂布厚度为35~85nm。Further, in the step of coating a layer of refractive index temperature control material on the upper surface of the substrate, the refractive index of the intermediate layer is 1.45 to 1.9, and the coating thickness of the intermediate layer is 35 to 85 nm.
进一步地,所述基板为彩膜基板或玻璃基板;所述折射率温控材料为硅氧烷系聚合物。Further, the substrate is a color filter substrate or a glass substrate; the refractive index temperature control material is a siloxane-based polymer.
进一步地,所述光阻材料包括负性光刻胶及金属卤化物,所述光阻层为由黑色光阻制备成的黑色矩阵层。Further, the photoresist material includes a negative photoresist and a metal halide, and the photoresist layer is a black matrix layer made of black photoresist.
进一步地,在对所述折射率温控材料进行预烘烤的步骤中,烘烤温度为70~110°C;在所述去除掩膜板并烘烤所述基板的步骤中,烘烤温度为230~300°C。Further, in the step of pre-baking the refractive index temperature control material, the baking temperature is 70~110°C; in the step of removing the mask plate and baking the substrate, the baking temperature It is 230~300°C.
进一步地,所述中间层与所述光阻层同为正光阻,或者,所述中间层与所述光阻层同为负光阻。Further, the intermediate layer and the photoresist layer are both positive photoresists, or the intermediate layer and the photoresist layer are both negative photoresists.
本发明另一目的提供一种显示装置,包括一基板、一中间层和光阻层,一基板、一光阻层以及中间层,所述中间层设于所述基板及所述光阻层之间;所述中间层与所述光阻层被同步固化显影于所述基板的一侧,所述中间层的图案与所述光阻层的图案相对应。Another object of the present invention is to provide a display device including a substrate, an intermediate layer and a photoresist layer, a substrate, a photoresist layer and an intermediate layer, the intermediate layer being disposed between the substrate and the photoresist layer The intermediate layer and the photoresist layer are simultaneously cured and developed on one side of the substrate, and the pattern of the intermediate layer corresponds to the pattern of the photoresist layer.
进一步地,所述基板上设有第一对位标记,所述掩膜板上设有第二对位标记,所述第二对位标记分别与所述第一对位标记一一对应。Further, a first alignment mark is provided on the substrate, and a second alignment mark is provided on the mask plate, and the second alignment mark corresponds to the first alignment mark respectively.
有益效果Beneficial effect
本发明提出了一种黑色矩阵的制备方法,并通过一次UV固化的方法使得中间层与黑色矩阵一起图案化,从而减少了中间层的干刻制程,提高制作效率。The invention provides a method for preparing a black matrix, and the UV layer is used to pattern the intermediate layer together with the black matrix, thereby reducing the dry etching process of the intermediate layer and improving the manufacturing efficiency.
附图说明BRIEF DESCRIPTION
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly explain the technical solutions in the embodiments of the present invention, the drawings required in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, without paying any creative work, other drawings can be obtained based on these drawings.
图1为本发明中黑色矩阵制备方法的流程图;1 is a flowchart of a method for preparing a black matrix in the present invention;
图2为本发明实施例基板的结构示意图;2 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
图3为本发明实施例基板和中间层的结构示意图;3 is a schematic structural diagram of a substrate and an intermediate layer according to an embodiment of the present invention;
图4为本发明实施例基板、中间层和光阻层的结构示意图;4 is a schematic structural view of a substrate, an intermediate layer, and a photoresist layer according to an embodiment of the present invention;
图5为本发明实施例掩膜板光照的结构示意图;5 is a schematic view of the structure of the mask plate illumination according to an embodiment of the present invention;
图6为图2基板的第一对位标记示意图;6 is a schematic diagram of the first alignment mark of the substrate of FIG. 2;
图7为图5掩膜板上的第二对位标记示意图;7 is a schematic diagram of the second alignment mark on the mask plate of FIG. 5;
图8为本发明制备完成的黑色矩阵结构示意图;8 is a schematic diagram of the structure of the black matrix prepared by the present invention;
图9为本发明提供紫外线自下而上曝光的结构示意图;9 is a schematic view of the structure of the present invention provides ultraviolet exposure from bottom to top;
图10为本发明提供的显示装置。10 is a display device provided by the present invention.
本发明实施方式Embodiments of the invention
以下是各实施例的说明是参考附加的图式,用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语,例如上、下、前、后、左、右、内、外、侧等,仅是参考附图式的方向。本发明提到的元件名称,例如第一、第二等,仅是区分不同的元部件,可以更好的表达。在图中,结构相似的单元以相同标号表示。The following is a description of each embodiment with reference to the attached drawings to illustrate specific embodiments of the invention that can be implemented. Directional terms mentioned in the present invention, such as up, down, front, back, left, right, inside, outside, side, etc., are only directions referring to the drawings. The names of elements mentioned in the present invention, such as first and second, are only to distinguish different meta-components, which can be better expressed. In the figure, units with similar structures are denoted by the same reference numerals.
本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式,本发明不应仅被解释为本文阐述的具体实施例。本发明提供实施例是为了解释本发明的实际应用,从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。Herein, embodiments of the present invention will be described in detail with reference to the drawings. The present invention can be embodied in many different forms, and the present invention should not be interpreted merely as the specific embodiments set forth herein. The embodiments of the present invention are provided to explain the actual application of the present invention, so that those skilled in the art can understand various embodiments of the present invention and various modifications suitable for specific intended applications.
如图1所示,本发明提供一种黑色矩阵的制备方法,包括如下步骤S1~S7。As shown in FIG. 1, the present invention provides a method for preparing a black matrix, including the following steps S1 to S7.
S1、如图2所示,首先提供一基板21,所述基板21上设置有第一对位标记211。基板21可采用彩膜基板或普通的玻璃基板。在本发明中,将添加的中间层和黑色矩阵一次性的图案化,其用于分割相邻的色组,遮挡色彩的空隙,防止漏光或者混色;并且中间层能够降低黑色矩阵的反射率,从而降低面板的反射率,降低整个LCD的反射率,也可以分担偏光片表面处理的难度和成本。如图6所示,基板21为矩形,第一对位标记211设置在基板21的四个角,因采用玻璃基板,所以在本发明的制备过程中并不需要参考前制备过程的对位标记。第一对位标记211的形状可为矩形、圆形,本发明优选为圆形标记。第一对位标记211可为本发明其他层次涂布和掩膜板放置提供位置参考。S1. As shown in FIG. 2, a substrate 21 is first provided, and a first alignment mark 211 is provided on the substrate 21. As the substrate 21, a color film substrate or a common glass substrate can be used. In the present invention, the added intermediate layer and the black matrix are patterned at once, which is used to divide adjacent color groups, block the color gaps, prevent light leakage or color mixing; and the intermediate layer can reduce the reflectivity of the black matrix, Thereby reducing the reflectivity of the panel and the reflectivity of the entire LCD, it can also share the difficulty and cost of polarizer surface treatment. As shown in FIG. 6, the substrate 21 is rectangular, and the first alignment marks 211 are provided at the four corners of the substrate 21. Since the glass substrate is used, it is not necessary to refer to the alignment marks of the previous preparation process in the preparation process of the present invention. . The shape of the first alignment mark 211 may be rectangular or circular, and the present invention is preferably a circular mark. The first alignment mark 211 can provide a position reference for coating and mask plate placement in other layers of the present invention.
S2、如图3所示,在所述基板21上表面涂布一层折射率温控材料。折射率温控材料为一硅氧烷系材料,所述材料一般为Si(OR)4或Ti(OR)4等金属纯盐单体,材料的折射率特性随着温度的变化而改变,中间层的折射率为1.45~1.9,其涂布厚度为35~85nm。优选地,折射率可以选择1.45、1.50、1.6、1.7或者1.90,涂布中间层22的厚度可以为35nm、45nm、55nm、75nm或者85nm。S2. As shown in FIG. 3, a layer of refractive index temperature control material is coated on the upper surface of the substrate 21. The refractive index temperature control material is a siloxane-based material. The material is generally a pure metal salt monomer such as Si(OR)4 or Ti(OR)4. The refractive index characteristic of the material changes with temperature. The refractive index of the layer is 1.45~1.9, and its coating thickness is 35~85nm. Preferably, the refractive index may be 1.45, 1.50, 1.6, 1.7, or 1.90, and the thickness of the coating intermediate layer 22 may be 35 nm, 45 nm, 55 nm, 75 nm, or 85 nm.
S3、第三步对所述折射率温控材料进行预烘烤,形成一中间层22。在中间层22涂布步骤中,被涂布的材料是透明凝胶状,因此要对材料进行预烘烤,使其稳定并形成中间层22,以方便之后步骤的制作。在步骤S3中,预烘烤的温度可为70°C、80°C、90°C或110°C。S3. The third step is to pre-bake the refractive index temperature control material to form an intermediate layer 22. In the coating step of the intermediate layer 22, the material to be coated is a transparent gel, so the material is pre-baked to stabilize it and form the intermediate layer 22, so as to facilitate the subsequent steps. In step S3, the pre-baking temperature may be 70°C, 80°C, 90°C or 110°C.
S4、如图4所示,在所述中间层22上涂布光阻材料,形成一光阻层23。光阻材料主要是负性光刻胶及金属卤化物,光阻层23为由黑色光阻制备成的黑色矩阵,光阻层23也可以被称为黑色矩阵层。在未曝光的状态下,光阻层23呈现透明状态。涂布光阻层23的厚度为0.8um、1.0um、1.4um或1.5um。优选的,金属卤化物为溴化银或氯化银,在曝光的过程中会变黑,形成黑色矩阵。所述负性光刻胶为光阻体系的主要成分。在未曝光时是可溶性物质,可溶于显影液,曝光后发生固化,变成不可溶物质;而金属卤化物为溴化银,在曝光后分解形成金属微粒,金属微粒由于颗粒小会呈现为黑色,具有高光密度值。S4. As shown in FIG. 4, a photoresist material is coated on the intermediate layer 22 to form a photoresist layer 23. The photoresist material is mainly negative photoresist and metal halide. The photoresist layer 23 is a black matrix made of black photoresist. The photoresist layer 23 may also be called a black matrix layer. In the unexposed state, the photoresist layer 23 assumes a transparent state. The thickness of the coated photoresist layer 23 is 0.8um, 1.0um, 1.4um or 1.5um. Preferably, the metal halide is silver bromide or silver chloride, which will turn black during exposure to form a black matrix. The negative photoresist is the main component of the photoresist system. It is a soluble substance when it is not exposed, and it is soluble in the developer. It solidifies after exposure and becomes an insoluble substance; and the metal halide is silver bromide, which decomposes to form metal particles after exposure. The metal particles will appear as small particles Black, with high optical density value.
S5、如图5所示,将掩膜板24放置在所述光阻层23上方或所述基板21下方,如图7所示,所述掩膜板设置有第二对位标记241。掩膜板24具有多个掩膜板通孔,多个掩膜板通孔形成的图案与光阻层23的图案一致,所述第二对位标记241设置在掩膜板四个角落,所述掩膜板24安装时,所述第二对位标记241与所述第一对位标记211一一对应。S5. As shown in FIG. 5, a mask plate 24 is placed above the photoresist layer 23 or below the substrate 21. As shown in FIG. 7, the mask plate is provided with a second alignment mark 241. The mask plate 24 has a plurality of mask plate through holes. The pattern formed by the plurality of mask plate through holes is consistent with the pattern of the photoresist layer 23. The second alignment marks 241 are provided at four corners of the mask plate. When the mask plate 24 is installed, the second alignment marks 241 correspond to the first alignment marks 211 one-to-one.
S6、利用紫外线自上而下照射所述光阻层23,或者,自下而上照射所述基板21,使得所述中间层与所述光阻层同步固化显影。其中,光阻层23上与掩膜板24通孔对应的位置为照光区域,照光区域的光阻层23中的金属卤化物分解形成金属微粒,使得照光区域的光阻层23呈现黑色,从而实现黑色矩阵遮光的功能,同时照光区域的光阻层23变得不溶于显影液,从而在后续的显影步骤中保留下来。而中间层22光阻特性与光阻层23光阻特性相同,其能被紫外线曝光后,可用显影液消除。从而使照光区域的中间层22和光阻层23同时不溶于显影液,未曝光区域将可以用显影液去除,从而使得所述中间层22与光阻层23形成相同的图案,二者同步实现固化显影。在紫外线对掩膜板进行光照后,用显影液能够对曝光区域进行消除,从而导致光阻层23和中间层22能够同时被显影液消除,可以减少之前单独对中间层光刻的步骤,达到同时固化显影。如图9所示,对于紫外线光的照射方向,可以选择从光阻层23上方照射,或者可以从基板21的下方进行照射,这并不影响本发明的结果,本发明优选的从光阻层23上方进行光照。S6. Irradiate the photoresist layer 23 with ultraviolet light from top to bottom, or irradiate the substrate 21 from bottom to top so that the intermediate layer and the photoresist layer are cured and developed simultaneously. Wherein, the position on the photoresist layer 23 corresponding to the through hole of the mask plate 24 is the illumination area, and the metal halide in the photoresist layer 23 in the illumination area decomposes to form metal particles, so that the photoresist layer 23 in the illumination area appears black, thus The black matrix light shielding function is realized, and at the same time, the photoresist layer 23 in the illuminated area becomes insoluble in the developing solution, thereby remaining in the subsequent developing step. The photoresist characteristics of the intermediate layer 22 are the same as the photoresist characteristics of the photoresist layer 23, which can be eliminated by a developer after being exposed to ultraviolet rays. As a result, the intermediate layer 22 and the photoresist layer 23 in the illuminated area are insoluble in the developer at the same time, and the unexposed area can be removed with the developer, so that the intermediate layer 22 and the photoresist layer 23 form the same pattern, and the two simultaneously cure development. After the mask plate is irradiated with ultraviolet rays, the exposed area can be eliminated with the developer, resulting in that the photoresist layer 23 and the intermediate layer 22 can be eliminated by the developer at the same time, which can reduce the previous step of photolithography of the intermediate layer separately. At the same time curing and development. As shown in FIG. 9, for the irradiation direction of the ultraviolet light, it can be selected to irradiate from above the photoresist layer 23, or it can be irradiated from below the substrate 21, which does not affect the results of the present invention. Illuminate above 23.
S7、去除掩膜板24并烘烤所述基板,使得所述中间层22与所述光阻层23同步图案化。掩膜板24选用为正光阻材料,经光照过后,可以用显影液进行消除。最后可以得到如图8所示的黑色矩阵结构。S7. The mask plate 24 is removed and the substrate is baked, so that the intermediate layer 22 and the photoresist layer 23 are patterned synchronously. The mask plate 24 is selected as a positive photoresist material, which can be eliminated with a developing solution after being exposed to light. Finally, the black matrix structure shown in FIG. 8 can be obtained.
因为在上述S3步骤中,烘烤温度只是使得中间层22初步定型,并没有使中间层22的折射率达到最优,需要对其进行二次烘烤,使得所述中间层22的折射率进一步优化,同时使得所述中间层22与所述光阻层23形成相同的图案,使得二者同步图案化。Because in the above step S3, the baking temperature is only to preliminarily shape the intermediate layer 22, and the refractive index of the intermediate layer 22 is not optimized, it needs to be baked twice to make the refractive index of the intermediate layer 22 further Optimization, while making the intermediate layer 22 and the photoresist layer 23 form the same pattern, so that the two are simultaneously patterned.
在本发明中,二次烘烤的温度范围为230~300°C,优选230°C、250°C、270°C、300°C,烘烤后,所述中间层22与所述光阻层23得以稳定地被固定至基板上,形成如图5所示的结构。二次烘烤能够让中间层22的折射率达到1.45~1.9范围内,进而可以降低黑色矩阵的反光,降低整体LCD的反光特性,也可以分担偏光片表面处理的难度和成本。In the present invention, the temperature range of the secondary baking is 230 to 300°C, preferably 230°C, 250°C, 270°C, 300°C. After baking, the intermediate layer 22 and the photoresist The layer 23 is stably fixed to the substrate, forming the structure shown in FIG. 5. The secondary baking can make the refractive index of the intermediate layer 22 reach the range of 1.45 to 1.9, which can further reduce the reflection of the black matrix, reduce the reflection characteristics of the overall LCD, and can also share the difficulty and cost of polarizer surface treatment.
具体的,所述中间层以一种硅氧烷系材料为例,材料主要为Si(OR)4或Ti(OR)4等金属纯盐单体,首先将所述金属纯盐单体进行聚合反应生成无机聚合物或有机无机混合型的聚合物硅氧烷体系,所述聚合物的分子结构式为,再将聚合物涂覆至所述基板上形成胶层,并经过紫外线烘烤最后形成稳定的分子结构并且能够使材料的折射率控制在1.45~1.9内,最后形成的中间层的分子结构式为如下。Specifically, the intermediate layer takes a siloxane-based material as an example, the material is mainly a pure metal salt monomer such as Si(OR)4 or Ti(OR)4, and the pure metal salt monomer is first polymerized The reaction produces an inorganic polymer or an organic-inorganic hybrid polymer siloxane system. The molecular structure of the polymer is: then the polymer is applied to the substrate to form a glue layer, which is finally stabilized by ultraviolet baking The molecular structure of the material and the refractive index of the material can be controlled within 1.45~1.9. The molecular structure formula of the intermediate layer finally formed is as follows.
本发明提供的实施例中,由于烘烤温度偏高,所以基板21应有耐高温的特性,可以不应影响其正常工作。中间层22和光阻层23的光阻特性应该相同,本发明选用负光阻,该特性是曝光后不可被显影液消除,在其他实施例可选用正光阻,这并不影响本发明成果。In the embodiment provided by the present invention, since the baking temperature is relatively high, the substrate 21 should have high temperature resistance characteristics, and it should not affect its normal operation. The photoresist characteristics of the intermediate layer 22 and the photoresist layer 23 should be the same. Negative photoresist is used in the present invention. This feature cannot be eliminated by the developer after exposure. In other embodiments, positive photoresist can be used, which does not affect the results of the present invention.
如图10所示,本发明提供了显示装置20,该装置包括一基板21、一中间层22、一光组层23、一着色层29、一ITO层25、一液晶层26、一薄膜晶体管阵列27和一盖板28。中间层22设于基板21的一侧,光阻层23设于所述中间层22远离所述基板21的一侧;所述中间层22与所述光阻层23同步被固化显影,且同步图案化。所述中间层22材料为硅氧烷系聚合物的折射率温控材料;所述光阻层23材料包括负性光刻胶及金属卤化物。着色层29与中间层22和光阻层23在基板上交替设置。ITO层25设置于着色层29和光阻层23的远离中间层22的一侧。基板21与盖板28相对设置,其间留有一间距(未标示)填充液晶层26。该薄膜晶体管阵列27设置于该盖板28的临近液晶层27的一侧。ITO层25和薄膜晶体管阵列27配合,以电场控制该液晶层26的液晶分子旋转与否,从而控制来自背光系统(图未表示)的光线通过与否。通过液晶层26的光线入射到着色层29和光阻层23上,所述着色层29仅通过红、蓝、绿三种颜色光线,光阻层23用于遮挡着色层29间管线,防止光泄露,所述中间层22与光阻层23特性相同,进一步防止光线泄露。As shown in FIG. 10, the present invention provides a display device 20, which includes a substrate 21, an intermediate layer 22, an optical group layer 23, a colored layer 29, an ITO layer 25, a liquid crystal layer 26, and a thin film transistor Array 27 and a cover 28. The intermediate layer 22 is provided on the side of the substrate 21, and the photoresist layer 23 is provided on the side of the intermediate layer 22 away from the substrate 21; the intermediate layer 22 and the photoresist layer 23 are simultaneously cured and developed, and synchronized Patterned. The material of the intermediate layer 22 is a refractive index temperature control material of a siloxane-based polymer; the material of the photoresist layer 23 includes a negative photoresist and a metal halide. The colored layer 29 is alternately provided on the substrate with the intermediate layer 22 and the photoresist layer 23. The ITO layer 25 is provided on the side of the colored layer 29 and the photoresist layer 23 away from the intermediate layer 22. The substrate 21 is arranged opposite to the cover plate 28 with a gap (not shown) between them to fill the liquid crystal layer 26. The thin film transistor array 27 is disposed on the side of the cover plate 28 adjacent to the liquid crystal layer 27. The ITO layer 25 cooperates with the thin film transistor array 27 to control whether the liquid crystal molecules of the liquid crystal layer 26 rotate with an electric field, thereby controlling the passing of light from the backlight system (not shown). The light passing through the liquid crystal layer 26 is incident on the colored layer 29 and the photoresist layer 23, and the colored layer 29 only passes through three colors of red, blue, and green. The photoresist layer 23 is used to block the pipeline between the colored layers 29 to prevent light leakage The characteristics of the intermediate layer 22 and the photoresist layer 23 are the same to further prevent light leakage.
所述显示装置20制备过程中,在所述基板21上设有第一对位标记211(图6中标注),所述第一对位标记211设于所述基板21的四个角落,所述掩膜板24上设有第二对位标记241(图7中标注),所述第二对位标记241设于所述掩膜板24的四个角落并分别与所述第一对位标记211一一对应。所述显示装置采用中间层22与光阻层23同步固化显影,且同步图案化,最后将掩膜板去除,所述显示装置减少了中间层22干刻制程,增加了工艺流程效率。During the preparation process of the display device 20, a first alignment mark 211 (marked in FIG. 6) is provided on the substrate 21, and the first alignment mark 211 is provided at four corners of the substrate 21. The mask plate 24 is provided with second alignment marks 241 (marked in FIG. 7 ), the second alignment marks 241 are provided at four corners of the mask plate 24 and are respectively aligned with the first The marks 211 correspond to each other. In the display device, the intermediate layer 22 and the photoresist layer 23 are simultaneously cured and developed, and patterned simultaneously, and finally the mask plate is removed. The display device reduces the dry etching process of the intermediate layer 22 and increases the efficiency of the process flow.
本发明的技术范围不仅仅局限于所述说明中的内容,本领域技术人员可以在不脱离本发明技术思想的前提下,对所述实施例进行多种变形和修改,而这些变形和修改均应当属于本发明的范围内。The technical scope of the present invention is not limited to the content in the description, and those skilled in the art can make various variations and modifications to the embodiments without departing from the technical idea of the present invention, and these variations and modifications are all It should fall within the scope of the present invention.

Claims (10)

  1. 一种黑色矩阵的制备方法,其特征在于,包括如下步骤:A method for preparing a black matrix is characterized in that it includes the following steps:
    提供一基板;Provide a substrate;
    在所述基板上表面涂布一层折射率温控材料;Coating a layer of refractive index temperature control material on the upper surface of the substrate;
    对所述折射率温控材料进行预烘烤,形成一中间层;Pre-baking the refractive index temperature control material to form an intermediate layer;
    在所述中间层上涂布一种光阻材料,形成一光阻层;Coating a photoresist material on the intermediate layer to form a photoresist layer;
    将一掩膜板放置在所述光阻层上方或所述基板下方;Placing a mask plate above the photoresist layer or below the substrate;
    利用紫外线自上而下照射所述光阻层,或者,自下而上照射所述基板,使得所述中间层与所述光阻层同步固化显影;Irradiating the photoresist layer with ultraviolet light from top to bottom, or irradiating the substrate from bottom to top, so that the intermediate layer and the photoresist layer are simultaneously cured and developed;
    去除掩膜板并烘烤所述基板,使得所述中间层与所述光阻层同步图案化。The mask plate is removed and the substrate is baked so that the intermediate layer is patterned simultaneously with the photoresist layer.
  2. 根据权利要求1所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 1, wherein:
    在提供一基板的步骤中,In the step of providing a substrate,
    所述基板上设置有第一对位标记;A first alignment mark is provided on the substrate;
    在将掩膜板放置在所述光阻层上方或所述基板下方的步骤中,In the step of placing the mask plate above the photoresist layer or below the substrate,
    所述掩膜板设置有第二对位标记,The mask plate is provided with a second alignment mark,
    所述第二对位标记分别与所述第一对位标记一一对应。The second alignment marks correspond to the first alignment marks, respectively.
  3. 根据权利要求2所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 2, wherein:
    所述第一对位标记设置于基板的四个角落,The first alignment marks are provided at four corners of the substrate,
    所述第二对位标记设置于掩膜板的四个角落。The second alignment marks are provided at four corners of the mask plate.
  4. 根据权利要求1所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 1, wherein:
    在所述基板上表面涂布一层折射率温控材料的步骤中,In the step of coating a layer of refractive index temperature control material on the upper surface of the substrate,
    所述中间层的折射率为1.45~1.9,The refractive index of the intermediate layer is 1.45~1.9,
    所述中间层的涂布厚度为35~85nm。The coating thickness of the intermediate layer is 35-85 nm.
  5. 根据权利要求1所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 1, wherein:
    所述基板为彩膜基板或玻璃基板;The substrate is a color film substrate or a glass substrate;
    所述折射率温控材料为硅氧烷系聚合物。The refractive index temperature control material is a siloxane polymer.
  6. 根据权利要求1所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 1, wherein:
    所述光阻材料包括负性光刻胶及金属卤化物,The photoresist material includes negative photoresist and metal halide,
    所述光阻层为由黑色光阻制备成的黑色矩阵层。The photoresist layer is a black matrix layer made of black photoresist.
  7. 根据权利要求1所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 1, wherein:
    在对所述折射率温控材料进行预烘烤的步骤中,In the step of pre-baking the refractive index temperature control material,
    烘烤温度为70~110°C;The baking temperature is 70~110°C;
    在所述去除掩膜板并烘烤所述基板的步骤中,In the step of removing the mask plate and baking the substrate,
    烘烤温度为230~300°C。The baking temperature is 230~300°C.
  8. 根据权利要求1所述的黑色矩阵的制备方法,其特征在于, The method for preparing a black matrix according to claim 1, wherein:
    所述中间层与所述光阻层同为正光阻,或者,The intermediate layer and the photoresist layer are both positive photoresists, or,
    所述中间层与所述光阻层同为负光阻。The intermediate layer and the photoresist layer are both negative photoresists.
  9. 一种显示装置,其特征在于,包括 A display device, characterized in that it includes
    基板、光阻层、中间层以及掩膜板,Substrate, photoresist layer, intermediate layer and mask plate,
    所述中间层设于所述基板及所述光阻层之间;The intermediate layer is provided between the substrate and the photoresist layer;
    所述中间层与所述光阻层被同步固化显影于所述基板的一侧,The intermediate layer and the photoresist layer are simultaneously cured and developed on one side of the substrate,
    所述中间层的图案与所述光阻层的图案相对应。The pattern of the intermediate layer corresponds to the pattern of the photoresist layer.
  10. 根据权利要求9所述的显示装置,其特征在于, The display device according to claim 9, wherein:
    所述基板上设有第一对位标记,所述掩膜板上设有第二对位标记,所述第二对位标记分别与所述第一对位标记一一对应。A first alignment mark is provided on the substrate, and a second alignment mark is provided on the mask plate, and the second alignment mark corresponds to the first alignment mark respectively.
PCT/CN2019/078210 2018-12-15 2019-03-15 Preparation method for black matrix and display device WO2020118937A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811537806.9 2018-12-15
CN201811537806.9A CN109471294A (en) 2018-12-15 2018-12-15 A kind of preparation method and display device of black matrix"

Publications (1)

Publication Number Publication Date
WO2020118937A1 true WO2020118937A1 (en) 2020-06-18

Family

ID=65675039

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/078210 WO2020118937A1 (en) 2018-12-15 2019-03-15 Preparation method for black matrix and display device

Country Status (2)

Country Link
CN (1) CN109471294A (en)
WO (1) WO2020118937A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110780375B (en) * 2019-11-15 2022-07-22 京东方科技集团股份有限公司 Polaroid and preparation method thereof, display panel and display device
CN110993825B (en) * 2019-12-19 2024-04-02 京东方科技集团股份有限公司 OLED plate manufacturing method and OLED plate
CN111352316B (en) * 2020-04-15 2024-04-12 Tcl华星光电技术有限公司 Photoresist bleaching and baking method and device
CN114038882B (en) * 2021-10-27 2022-12-20 重庆康佳光电技术研究院有限公司 Micro light-emitting diode display and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06331817A (en) * 1993-05-25 1994-12-02 Toppan Printing Co Ltd Color filter
CN102257426A (en) * 2008-12-19 2011-11-23 夏普株式会社 Substrate, and display panel provided with substrate
CN103926743A (en) * 2014-03-24 2014-07-16 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof, and display device
CN105026963A (en) * 2013-03-07 2015-11-04 东丽株式会社 Black matrix substrate
CN105308484A (en) * 2013-06-17 2016-02-03 东丽株式会社 Method for manufacturing laminated resin black-matrix substrate
CN107728373A (en) * 2017-11-22 2018-02-23 深圳市华星光电技术有限公司 A kind of color membrane substrates and its manufacture method, liquid crystal panel

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105164558B (en) * 2013-04-30 2017-08-29 凸版印刷株式会社 The manufacture method and display device of base board for display device, base board for display device
KR102254533B1 (en) * 2014-10-22 2021-05-24 삼성디스플레이 주식회사 Method of manufacturing a polarizer and a display panel having the same
CN104765190B (en) * 2015-04-28 2017-02-01 深圳市华星光电技术有限公司 manufacturing method of black matrix
CN106200101A (en) * 2016-09-06 2016-12-07 昆山龙腾光电有限公司 Colored filter substrate and manufacture method and display panels

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06331817A (en) * 1993-05-25 1994-12-02 Toppan Printing Co Ltd Color filter
CN102257426A (en) * 2008-12-19 2011-11-23 夏普株式会社 Substrate, and display panel provided with substrate
CN105026963A (en) * 2013-03-07 2015-11-04 东丽株式会社 Black matrix substrate
CN105308484A (en) * 2013-06-17 2016-02-03 东丽株式会社 Method for manufacturing laminated resin black-matrix substrate
CN103926743A (en) * 2014-03-24 2014-07-16 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof, and display device
CN107728373A (en) * 2017-11-22 2018-02-23 深圳市华星光电技术有限公司 A kind of color membrane substrates and its manufacture method, liquid crystal panel

Also Published As

Publication number Publication date
CN109471294A (en) 2019-03-15

Similar Documents

Publication Publication Date Title
WO2020118937A1 (en) Preparation method for black matrix and display device
TWI261688B (en) Color filter, liquid crystal device and process for production of color filter
JP5094010B2 (en) Color filter substrate for liquid crystal display device and manufacturing method thereof
WO2017049878A1 (en) Photoresist pattern forming method, color filter, and display device
WO2013127208A1 (en) Color filter and fabricating method thereof
WO2014166155A1 (en) Manufacturing method of mask plate for solidifying and shielding frame sealing glue
TW200302393A (en) Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device
TW200420913A (en) Method for manufacturing color filter and method for manufacturing liquid crystal display device using the same
JP2001183513A (en) Color filter, its manufacturing method, and color liquid crystal display device
US10852578B2 (en) Liquid crystal display panel and manufacturing method thereof
JP3231964B2 (en) Manufacturing method of substrate with functional film
JP4011668B2 (en) Manufacturing method of color filter with gap control function
JP4082106B2 (en) Color filter for transflective LCD and method for manufacturing the same
WO2015168900A1 (en) Colour filter and manufacturing method therefor
JP5655426B2 (en) Color filter manufacturing method and color filter
JP2009294498A (en) Method for producing color filter for display device and color filter for display device
KR960035098A (en) Color filter for liquid crystal display (LCD) and its manufacturing method
CN108170000A (en) The production method of mask plate and colored filter
JP4919043B2 (en) Manufacturing method of color filter for transflective liquid crystal display device
WO2021022708A1 (en) Method for manufacturing color filter, and color filter
CN114609816B (en) Display panel and manufacturing method thereof
JP3205536B2 (en) Liquid crystal display device and method of manufacturing the same
CN108051980B (en) Mask plate and preparation method thereof, mask plate exposure system and splicing exposure method
JPH08136712A (en) Production of color filter
JP2001356352A (en) Liquid crystal display device and method for manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19895482

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19895482

Country of ref document: EP

Kind code of ref document: A1