WO2020118910A1 - 触控显示设备及其制备方法 - Google Patents

触控显示设备及其制备方法 Download PDF

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Publication number
WO2020118910A1
WO2020118910A1 PCT/CN2019/076190 CN2019076190W WO2020118910A1 WO 2020118910 A1 WO2020118910 A1 WO 2020118910A1 CN 2019076190 W CN2019076190 W CN 2019076190W WO 2020118910 A1 WO2020118910 A1 WO 2020118910A1
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Prior art keywords
electrode
electrode unit
bridge structure
layer
display device
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PCT/CN2019/076190
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English (en)
French (fr)
Inventor
李波
Original Assignee
武汉华星光电半导体显示技术有限公司
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Priority to US16/462,534 priority Critical patent/US20200194506A1/en
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Publication of WO2020118910A1 publication Critical patent/WO2020118910A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present disclosure relates to the technical field of touch panels, and in particular, to a touch display device and a preparation method thereof.
  • the active matrix organic light emitting diode (AMOLED) display technology has developed rapidly, and the corresponding touch technology has also followed up.
  • the touch technology that cooperates with the active matrix organic light emitting diode display mainly includes external touch film bonding technology and glass.
  • the packaged rigid in-cell touch panel technology whether it is external touch film bonding technology or glass in-cell touch technology, has the problem of increasing the thickness of the product and affecting the narrow-side design.
  • the external touch film bonding technology is shown in FIG.
  • the touch film layer 14 can be placed above or below the polarizer 15 according to different requirements Due to the increased number of bonding, the bonding tolerance is generally above 0.1 mm, so the external touch film bonding technology will increase the thickness of the product and is not conducive to the design of narrow frame products.
  • the glass-embedded active matrix organic light-emitting diode touch technology includes a TFT substrate 20, an optical dielectric layer 21, an encapsulated glass layer 22, a touch circuit layer 23, a polarizer 24, an optical adhesive layer 25 and
  • the cover glass 26 is composed of a touch-sensing circuit formed on the encapsulating glass layer 22 of the display screen, and then attaching one side of the encapsulating glass layer 22 to the OLED panel through glass glue, no need to separately attach the external touch Control film.
  • this structure is only suitable for making rigid active matrix organic light-emitting diode display screens, and the overall thickness of the product is thick, which is not suitable for the current development direction of light and thin products.
  • the production of the touch panel directly on the OLED panel may be interfered by the signal of the OLED panel below, and the touch insensitivity may occur.
  • the external touch film bonding technology will increase the thickness of the product and is not conducive to the design of narrow-frame products.
  • the production of the touch panel directly on the OLED panel may be interfered by the signal of the OLED panel below, and the touch insensitivity may occur.
  • the present disclosure manufactures touch sensing circuits on the TFE packaging layer, and the interaction sensing area between the touch electrodes is increased through the design of the touch circuit pattern and the bridge structure to effectively enhance the touch sensing signal
  • the interference from the OLED panel under the touch panel is relatively reduced to overcome the above-mentioned defects.
  • the touch panel display device includes: an organic light emitting diode display panel, and the organic light emitting diode display panel includes: a thin film transistor backplane A light-emitting layer provided on the back of the thin-film transistor; a packaging layer provided on the light-emitting layer; a base layer provided on the package layer; a plurality of first electrode strings, Disposed on the base layer along a first direction, wherein each plurality of first electrode strings includes a plurality of first electrode units; and a plurality of second electrode strings along a second direction and A plurality of first electrode strings are interleaved on the base layer in an insulated manner, wherein each plurality of second electrode strings includes a plurality of second electrode units; wherein the plurality of first electrode strings and the plurality of second electrodes
  • the electrode strings are arranged on the same layer, and a first bridge structure is electrically connected to the adjacent first electrode unit or the adjacent second electrode unit;
  • the second electrode unit When the first bridge structure is electrically connected to the adjacent first electrode unit, the second electrode unit further includes a third electrode located inside the second electrode unit, and the first bridge structure is electrically Connecting the third electrode and the first electrode unit;
  • the first electrode unit When the first bridge structure is electrically connected to the adjacent second electrode unit, the first electrode unit further includes a fourth electrode located inside the first electrode unit, and the first bridge structure is electrically Connect the fourth electrode and the second electrode unit.
  • the first electrode unit further includes a fourth electrode located inside the first electrode unit, and a second bridge structure is electrically connected to the fourth electrode and The second electrode unit.
  • the second electrode unit further includes a third electrode located inside the second electrode unit, and a second bridge structure is electrically connected to the third electrode and The first electrode unit.
  • the first electrode unit and the second electrode unit respectively include: an insulating layer disposed on the first bridge structure or the second bridge structure , And corresponding to the first bridge structure or the second bridge structure is provided with a through hole; a metal layer is provided on the insulating layer, the metal layer through the through hole and the first frame The bridge structure or the second bridge structure is electrically connected.
  • the third electrode is disposed in an internal area of the second electrode unit, and the fourth electrode is disposed in an internal area of the first electrode unit.
  • the first bridge structure and the second bridge structure are sequentially laminated by a first conductive layer, an intermediate metal layer, and a second conductive layer, respectively constitute.
  • the touch panel further includes a protective layer disposed on the base layer, the protective layer completely covers the plurality of first electrode strings and the plurality of A second electrode string, the first bridge structure and the second bridge structure.
  • the first electrode unit is a driving electrode
  • the second electrode unit is a sensing electrode
  • the touch panel display device includes: an organic light emitting diode display panel, and the organic light emitting diode display panel includes: a thin film transistor back Board; a light-emitting layer, which is provided on the back of the thin film transistor; a packaging layer, which is provided on the light-emitting layer; a base layer, which is provided on the package layer; a plurality of first electrode strings , Disposed on the base layer along a first direction, wherein each plurality of first electrode strings includes a plurality of first electrode units; and a plurality of second electrode strings, along a second direction and with the A plurality of first electrode strings are interleaved on the base layer in an insulated manner, wherein each of the plurality of second electrode strings includes a plurality of second electrode units; wherein the plurality of first electrode strings and the plurality of first electrodes
  • the two electrode strings are arranged on the same layer, and a first bridge structure is electrical
  • the first bridge structure is electrically connected to an adjacent first electrode unit, and the second electrode unit further includes a first electrode unit located inside the second electrode unit Three electrodes, the first bridge structure electrically connects the third electrode and the first electrode unit, and the first electrode unit further includes a fourth electrode located inside the first electrode unit, a The second bridge structure is electrically connected to the fourth electrode and the second electrode unit.
  • the first bridge structure is electrically connected to the adjacent second electrode unit, and the first electrode unit further includes a first electrode unit located inside the first electrode unit Four electrodes, the first bridge structure electrically connects the fourth electrode and the second electrode unit, and the second electrode unit further includes a third electrode located inside the second electrode unit, a The second bridge structure is electrically connected to the third electrode and the first electrode unit.
  • the first electrode unit and the second electrode unit respectively include: an insulating layer disposed on the first bridge structure or the second bridge structure , And corresponding to the first bridge structure or the second bridge structure is provided with a through hole; a metal layer is provided on the insulating layer, the metal layer through the through hole and the first frame The bridge structure or the second bridge structure is electrically connected.
  • the third electrode is disposed in an internal area of the second electrode unit, and the fourth electrode is disposed in an internal area of the first electrode unit.
  • the first bridge structure and the second bridge structure are sequentially laminated by a first conductive layer, an intermediate metal layer, and a second conductive layer, respectively constitute.
  • the touch panel further includes a protective layer disposed on the base layer, the protective layer completely covers the plurality of first electrode strings and the plurality of A second electrode string, the first bridge structure and the second bridge structure.
  • the first electrode unit is a driving electrode
  • the second electrode unit is a sensing electrode
  • the present disclosure also provides a method for manufacturing a touch display device, including: providing an organic light emitting diode display panel, the organic light emitting diode display panel includes a thin film transistor backplane; providing a light emitting layer on the Thin film transistor backplane; providing a packaging layer on the light-emitting layer; providing a base layer on the packaging layer; providing a metal grid line on the base layer, the metal grid line is configured in multiple A plurality of first electrode strings and a plurality of second electrode strings, wherein each of the plurality of first electrode strings includes a plurality of first electrode units, and each of the plurality of second electrode strings includes a plurality of second electrode units; forming a first The bridge structure is between two adjacent first electrode units or adjacent second electrode units.
  • the first bridge structure is electrically connected to an adjacent first electrode unit, and the second electrode unit further includes an inner portion of the second electrode unit A third electrode, the first bridge structure is electrically connected to the third electrode and the first electrode unit, and the first electrode unit further includes a fourth located inside the first electrode unit The electrode and a second bridge structure are electrically connected to the fourth electrode and the second electrode unit.
  • the first bridge structure is electrically connected to an adjacent second electrode unit, and the first electrode unit further includes a portion located inside the first electrode unit A fourth electrode, the first bridge structure electrically connects the fourth electrode and the second electrode unit, and the second electrode unit further includes a third electrode located inside the second electrode unit The electrode and a second bridge structure are electrically connected to the third electrode and the first electrode unit.
  • the touch display device and the preparation method thereof provided by the present disclosure realize the embedded touch panel of the flexible organic light emitting diode screen by making a metal grid touch sensing circuit on the thin film packaging layer of the flexible active matrix organic light emitting diode display screen technology.
  • the thickness of the panel product can be effectively reduced, and the use of a metal grid as the touch sensing circuit can make the panel product have good bending resistance and realize flexible display touch.
  • the metal grid touch structure proposed by the present disclosure can effectively reduce the number of film laminations of the touch display device during the manufacturing process and reduce the thickness of the panel product.
  • different bridge structures are used to connect the touch electrodes and the peripheral sensing electrodes. The design effectively enhances the touch sensing signal and expands the touch sensing area, which improves the sensitivity of touch sensing.
  • FIG. 1 is a schematic side cross-sectional view of a structure of an existing external touch film laminating panel.
  • FIG. 2 is a schematic side cross-sectional view of a conventional glass-encapsulated rigid in-cell touch panel structure.
  • FIG. 3 is a schematic top view of the touch panel of the touch display device of the present disclosure.
  • FIG. 4 is a schematic side sectional view of the touch display device of the present disclosure.
  • FIG. 5 is a schematic diagram of a metal grid circuit of a touch display device according to the present disclosure.
  • FIG. 6 is a schematic diagram of a touch panel of the touch display device of the present disclosure.
  • FIG. 7 is a schematic structural diagram of a first bridge of a touch display device according to the present disclosure.
  • FIG. 8 is a schematic structural diagram of a second bridge of the touch display device of the present disclosure.
  • FIG. 9 is a schematic diagram of steps of the manufacturing method of the touch display device disclosed.
  • FIGS. 3-6 are schematic diagrams of a top view and a side view of a touch display device of the present disclosure, and a schematic diagram of a touch panel.
  • the touch panel display device includes: an organic light emitting diode display panel 110 and a touch panel 210.
  • the organic light emitting diode display panel 110 includes: a thin film transistor backplane 111; The light emitting layer 112 is disposed on the thin film transistor backplane 111; an encapsulation layer 113 is disposed on the light emitting layer 112; the touch panel 210 includes: a base layer 211, the base layer 211 is disposed on the A plurality of first electrode strings 212 disposed on the base layer 211 along a first direction, wherein each of the plurality of first electrode strings 212 includes a plurality of first electrode units 2121; and a plurality of The second electrode strings 213 are alternately arranged on the base layer 211 along a second direction and insulated from the plurality of first electrode strings 212, wherein each of the plurality of second electrode strings 213 includes a plurality of second Electrode unit 2131; wherein the plurality of first electrode strings 212 and the plurality of second electrode strings 213 are disposed on the same layer, and a first bridge structure 300 is electrically connected to adjacent first electrode units 2121 or phases
  • the base layer 211 of the touch panel 210 has a display area 211a and a non-display area 211b.
  • the touch panel 210 includes a plurality of electrode blocks.
  • the electrode blocks can be divided into a plurality of first electrode strings 212 arranged in an array shape in the display area 211a, and a plurality of second electrode strings 213 arranged around the plurality of first electrode strings 212 arranged in an array shape.
  • the shapes and areas of the plurality of first electrode strings 212 and the plurality of second electrode strings 213 are the same, but the patterns of floating electrodes or dummy electrodes (to be described later) in the first electrode strings 212 and the second electrode strings 213 are The shape or area is not the same.
  • the first electrode unit 2121 may be a driving electrode, and the second electrode unit 2131 may be a sensing electrode. In other embodiments, the first electrode unit 2121 may be a sensing electrode, and the second electrode unit 2131 may be a driving electrode.
  • the materials of the first electrode unit 2121 and the second electrode unit 2131 may include transparent conductive materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-doped Tin oxide doped tin oxide (FTO), aluminum doped zinc oxide (aluminum doped zinc oxide (AZO), gallium doped zinc oxide (gallium doped zinc oxide, GZO), or other light-transmitting conductive materials, such as metal grid lines (metal mesh), nano silver wire (si1ver nano-wire, SNW), etc.
  • transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-doped Tin oxide doped tin oxide (FTO), aluminum doped zinc oxide (aluminum doped zinc oxide (AZO), gallium doped zinc oxide (gallium doped zinc oxide, GZO), or other light-transmitting conductive materials, such as metal grid lines (metal mesh), nano silver wire (si1ver nano-wire
  • the touch sensing circuits of the plurality of first electrode strings 212 and the plurality of second electrode strings 213 adopt Metal-mesh metal grid technology to form the plurality of metal meshes of the touch sensing circuits
  • the grid line 400 avoids the pixel light emitting area 130 of the organic light emitting diode display panel 110, and is routed at a middle portion of adjacent pixel points 140, 141, 142 (for example, pixel points of different colors of light), and a plurality of first electrode units 2121 and the plurality of second electrode units 2131 are made on the same layer.
  • the openings 150 generated by Metal-mesh metal grid technology separate the plurality of first electrode units 2121 and the plurality of second electrode units 2131.
  • the metal grid The distance between the openings 150 between the lines 400 does not exceed the distance between the light emitting areas of adjacent pixels.
  • One of the plurality of first electrode units 2121 and the plurality of second electrode units 2131 is connected by a bridge structure, which will be described in detail later.
  • the plurality of first electrode strings 212 and the plurality of second electrode strings 213 are spatially isolated from each other.
  • the second electrode unit 2131 includes a third electrode 2133 located inside the second electrode unit 2131.
  • the first electrode unit 2121 includes a fourth electrode 2123 located inside the first electrode unit 2121.
  • the third electrode 2133 and the fourth electrode 2123 are located inside the first electrode unit 2121 and the second electrode unit 2131, respectively.
  • the second electrode unit 2131 when the first bridge structure 300 is electrically connected to two adjacent first electrode units 2121, the second electrode unit 2131 further includes an inner portion of the second electrode unit 2131 A third electrode 2133 (such as the aforementioned floating electrode or dummy electrode), the first bridge structure 300 is electrically connected to the third electrode 2133 and the first electrode unit 2121, and the first electrode unit 2121 further includes a fourth electrode 2123 (such as the aforementioned floating electrode or dummy electrode) located inside the first electrode unit 2121, and a second bridge structure 600 electrically connecting the fourth electrode 2133 and the first electrode Two electrode unit 2131.
  • a third electrode 2133 such as the aforementioned floating electrode or dummy electrode
  • both ends of the first electrode unit 2121 are respectively provided with the first bridge structure 300.
  • the first bridge structure 300 connects two adjacent first electrode units 2121 to each other, so as to effectively transmit signals.
  • the first bridge structure 300 connects the third electrode 2133 and the first electrode unit 2121 in the second electrode unit 2131 to increase the sensing area of the first electrode unit 2121 and enhance touch driving Interaction ability of area and sensing area. As shown in FIG.
  • the adjacent first electrode units 2121 isolated from each other are turned on by the plurality of zigzag first bridge structures 300, and at the same time the internal ones that belong to the second electrode unit 2131
  • the third electrode 2133 is in conduction with the first electrode unit 2121 to realize the expansion of the sensing area of the first electrode unit 2121 and the second electrode unit 2131 and enhance the touch sensing signal.
  • the second bridge structure 600 is provided on the outermost periphery of the second electrode unit 2131, which connects the fourth electrode 2123 inside the first electrode unit 2121 and the second electrode unit 2131 Turn on, expand the sensing area of the second electrode unit 2131, increase the touch sensing area between the second electrode unit 2131 and the first electrode unit 2121, and effectively increase the touch sensing signal and sensitivity.
  • the first bridge structure 300 may be electrically connected to the adjacent second electrode unit 2131 instead of electrically connecting the adjacent first electrode unit 2121, the first electrode unit 2121 further includes a fourth electrode 2123 located inside the first electrode unit 2121, the first bridge structure 300 is electrically connected to the fourth electrode 2123 and the second electrode unit 2131, and the second electrode
  • the unit 2131 further includes a third electrode 2133 located inside the second electrode unit 2131, and the second bridge structure 600 electrically connects the third electrode 2133 and the first electrode unit 2121.
  • the first bridge structure 300 is provided at both ends of the second electrode unit 2131, that is, the first bridge structure 300 is provided between two adjacent second electrode units 2131.
  • the first bridge structure 300 connects two adjacent second electrode units 2131 to each other, so as to effectively transmit signals.
  • the first bridge structure 300 connects the fourth electrode 2123 and the second electrode unit 2131 inside the first electrode unit 2121 to realize an increase in the sensing area of the second electrode unit 2131 and enhance touch driving Interaction ability of area and sensing area.
  • the second bridge structure 600 is provided on the outermost periphery of the first electrode unit 2121, and the third electrode 2133 inside the second electrode unit 2131 and the first electrode unit 2121 Turn on, expand the sensing area of the first electrode unit 2121, increase the touch sensing area between the first electrode unit 2121 and the second electrode unit 2131, effectively increase the touch sensing signal and sensitivity, such as As shown in Figure 8.
  • the base layer 211 (buffer layer) is disposed on the encapsulation layer 113.
  • the base layer 211 is preferably made of silicon nitride, but is not limited thereto.
  • An electrode metal layer in the form of a metal grid line 400 formed on the base layer 211 includes a plurality of first electrode strings 212 and a plurality of second electrode strings 213. More specifically, a first metal layer 221 is disposed on the encapsulation layer 113, and the first metal layer 221 serves as the first bridge structure 300.
  • an insulating layer 231 is provided on the first bridge structure 300, and corresponding to the first bridge structure 300 is provided with a through hole 500; a second metal layer 241 is provided on the insulating layer 231, The second metal layer 241 is electrically connected to the first bridge structure 300 through the through hole 500.
  • the second metal layer 241 is configured to include a touch electrode pattern of the first electrode unit 2121 and the second electrode unit 2131, that is, to constitute a metal grid line 400.
  • the first bridge structure 300 conducts the first electrode unit 2121 and the second electrode unit 2131 isolated from each other through the through hole 500 in the insulating layer 231 to realize the mutual capacitance sensing function, as shown in FIG. 4 .
  • the touch panel further includes a protective layer 251 disposed on the base layer 211, completely covering the plurality of first electrode strings 212, the plurality of second electrode strings 213, and the first bridge structure 300 and the second bridge structure 600.
  • the first bridging structure 300 and the second bridging structure 600 are respectively composed of a first conductive layer, an intermediate metal layer and a second conductive layer laminated in sequence. More specifically, the metals forming the first bridging structure 300 and the second bridging structure 600 are formed by sequentially laminating metals such as titanium-aluminum-titanium or molybdenum-aluminum-molybdenum.
  • the second metal layer constituting the metal mesh circuit 400 is formed in the form of a three-layer titanium-aluminum-titanium composite metal, which can not only prevent metal oxidation, but also enhance the folding resistance of the touch sensing circuit.
  • the line width of the metal mesh line 400 is in the range of 0.5 microns to 5 microns.
  • the manufacturing method of the touch display device of the present disclosure includes: step S01: providing an organic light emitting diode display panel 110, the organic light emitting diode display panel 110 includes a thin film transistor backplane 111; step S02: providing a light emitting layer 112 on the TFT backplane 111; step S03: providing a packaging layer 113 on the light-emitting layer 112; step S04: providing a touch panel 210, the touch panel 210 includes a base layer 211, formed in the package Layer 113; step S05: providing a metal grid line 400 on the base layer 211, the metal grid line 400 is configured with a plurality of first electrode strings 212 and a plurality of second electrode strings 213, each of which The plurality of first electrode strings 212 includes a plurality of first electrode units 2121, and each of the plurality of second electrode strings 213 includes a plurality of
  • the first electrode unit 2121 may be a driving electrode, and the second electrode unit 2131 may be a sensing electrode. In other embodiments, the first electrode unit 2121 may be a sensing electrode, and the second electrode unit 2131 may be a driving electrode.
  • the materials of the first electrode unit 2121 and the second electrode unit 2131 may include transparent conductive materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-doped Tin oxide doped tin oxide (FTO), aluminum doped zinc oxide (aluminum doped zinc oxide (AZO), gallium doped zinc oxide (gallium doped zinc oxide, GZO), or other light-transmitting conductive materials, such as metal grid lines (metal mesh), nano silver wire (si1ver nano-wire, SNW), etc.
  • transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and fluorine-doped Tin oxide doped tin oxide (FTO), aluminum doped zinc oxide (aluminum doped zinc oxide (AZO), gallium doped zinc oxide (gallium doped zinc oxide, GZO), or other light-transmitting conductive materials, such as metal grid lines (metal mesh), nano silver wire (si1ver nano-wire
  • Metal-mesh metal mesh technology is used on the encapsulation layer to fabricate the metal mesh circuit 400.
  • the metal mesh circuit 400 avoids the light-emitting area of the pixel of the organic light-emitting diode display panel 110. In the middle area of adjacent pixels, the metal grid line 400 has a line width in the range of 0.5 ⁇ m to 5 ⁇ m.
  • the specific method is to form the base layer 211 (buffer layer) on the encapsulation layer 113 first, the base layer 211 is preferably made of silicon nitride material, and then form a first metal layer on the base layer 211 as the first One bridge structure 300.
  • an insulating layer 231 is formed on the first bridge structure 300, and a plurality of through holes 500 are formed on the first bridge structure 300 using an etching process, and then a second metal layer 241 is formed on the insulation On the layer 231, and the second metal layer 241 is etched to form a touch electrode pattern including the first electrode unit 2121 and the second electrode unit 2131.
  • the first bridge structure 300 passes through the insulating layer 231
  • the through hole 500 conducts the first electrode unit 2121 and the second electrode unit 2131 isolated from each other to realize the mutual capacitance sensing function.
  • a second bridge structure 600 is provided on the outermost periphery of the first electrode unit 2121 or the second electrode unit 2131.
  • the second electrode unit 2131 further includes a third electrode 2133 (such as the aforementioned floating electrode or dummy electrode) inside the second electrode unit 2131, and the first bridge structure 300 is electrically connected to the first The three electrodes 2133 and the first electrode unit 2121, and the first electrode unit 2121 further include a fourth electrode 2123 (such as the aforementioned floating electrode or dummy electrode) located inside the first electrode unit 2121, a The second bridge structure 600 is electrically connected to the fourth electrode 2123 and the second electrode unit 2131.
  • the second bridge structure 600 is provided at the outermost periphery of the second electrode unit 2131 to guide the fourth electrode 2123 inside the first electrode unit 2121 and the second electrode unit 2131 In this way, the sensing area of the second electrode unit 2131 is enlarged, the area of touch sensing between the second electrode unit 2131 and the first electrode unit 2121 is increased, and the touch sensing signal and sensitivity are effectively increased.
  • the first electrode unit 2121 when the first bridge structure 300 is electrically connected to the adjacent second electrode unit 2131, the first electrode unit 2121 further includes an extension located on the first electrode unit 2121 A fourth electrode 2123, the first bridge structure 300 is electrically connected to the fourth electrode 2123 and the second electrode unit 2131, and the second electrode unit 2131 further includes a second electrode unit 2131 Inside a third electrode 2133, the second bridge structure 600 is electrically connected to the third electrode 2133 and the first electrode unit 2121.
  • the first bridging structure 300 is respectively disposed at both ends of the second electrode unit, that is, the first bridging structure 300 is disposed between two adjacent second electrode units 2131.
  • the first bridge structure 300 connects two adjacent second electrode units 2131 to each other, so as to effectively transmit signals.
  • the first bridge structure 300 connects the fourth electrode 2123 and the second electrode unit 2131 inside the first electrode unit 2121 to realize an increase in the sensing area of the second electrode unit 2131 and enhance touch driving Interaction ability of area and sensing area.
  • the second bridge structure 600 is provided on the outermost periphery of the first electrode unit 2121, and the third electrode 2133 inside the second electrode unit 2131 and the first electrode unit 2121 Turn on, expand the sensing area of the first electrode unit 2121, increase the touch sensing area between the first electrode unit 2121 and the second electrode unit 2131, and effectively increase the touch sensing signal and sensitivity.
  • the fourth electrode 2123 (floating electrode/dummy electrode) inside the first electrode unit 2121 is connected to the second electrode unit 2131 through the above design, or the third electrode inside the second electrode unit 2131 is connected
  • the electrode 2133 (floating electrode/dummy electrode) is in conduction with the first electrode unit 2121, so that the touch sensing area of the first electrode unit 2121 and the second electrode unit 2131 can be enlarged to increase the first
  • the touch sensing area of the electrode unit 2121 and the second electrode unit 2131 effectively increases the touch sensing signal.
  • the touch display device and the preparation method thereof provided by the present disclosure realize the embedded touch panel of the flexible organic light emitting diode screen by making a metal grid touch sensing circuit on the thin film packaging layer of the flexible active matrix organic light emitting diode display screen technology.
  • the thickness of the panel product can be effectively reduced, and the use of a metal grid as the touch sensing circuit can make the panel product have good bending resistance and realize flexible display touch.
  • the metal grid touch structure proposed by the present disclosure can effectively reduce the number of film laminations of the touch display device during the manufacturing process and reduce the thickness of the panel product.
  • different bridge structures are used to connect the touch electrodes and the peripheral sensing electrodes. The design effectively enhances the touch sensing signal and expands the touch sensing area, which improves the sensitivity of touch sensing.

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Abstract

提供一种触控显示技术，尤其指一种触控显示设备，所述触控显示设备包括：一有机发光二极管显示面板，包括：一薄膜晶体管背板；一发光层；一封装层；一基底层，设置于所述封装层上；多条第一电极串，沿一第一方向设置于所述基底层上，其中每一多条第一电极串包括多个第一电极单元；多条第二电极串，沿一第二方向且与所述多条第一电极串互相绝缘地交错设置于所述基底层上，每一多条第二电极串包括多个第二电极单元；所述多条第一电极串及所述多条第二电极串设置于同一层，且一第一架桥结构电性连接相邻的第一电极单元或相邻的第二电极单元，达到增加触控感应面积的效果。还提供所述触控显示设备的制造方法。

Description

触控显示设备及其制备方法 技术领域
本揭示涉及触控面板技术领域，尤其涉及一种触控显示设备及其制备方法。
 背景技术
近年来主动矩阵有机发光二极管(AMOLED)显示技术快速发展，对应的触控技术也同步跟进，目前配合主动矩阵有机发光二极管显示屏的触控技术主要有外挂式触控薄膜贴合技术和玻璃封装的刚性内嵌式触控面板技术，无论是外挂触控薄膜贴合技术还是玻璃内嵌式触控技术，都存在增加产品厚度影响窄边设计的问题。外挂式触控薄膜贴合技术如图1所示，包括TFT基板10、光学介质层11、薄膜封装层12、光学黏着胶层13、触控薄膜层14、偏光片15、光学黏着胶层16以及盖板玻璃17构成，通过光学黏着胶层13将触控薄膜层14和主动矩阵有机发光二极管显示面板贴合在一起，根据要求不同触控薄膜层14可以放置在偏光片15的上方或者下方，由于增加了贴合次数，贴合公差一般都在0.1毫米以上，所以外挂式触控薄膜贴合技术会增大产品厚度而且不利于窄边框产品设计。
如图2所示，玻璃封装内嵌式主动矩阵有机发光二极管触控技术包括TFT基板20、光学介质层21、封装玻璃层22、触控线路层23、偏光片24、光学黏着胶层25以及盖板玻璃26构成，是在显示屏的封装玻璃层22上制作触控感应线路，然后将封装玻璃层22的一面通过玻璃胶与OLED面板贴合在一起，不需要再单独贴合外挂式触控薄膜。但是这种结构只适合制作刚性的主动矩阵有机发光二极管显示屏，而且产品整体厚度较厚，不适合当前产品轻薄化的发展方向。另外直接在OLED面板上制作触控面板会受到下方OLED面板的信号的干扰，出现触控不灵敏的情况。
因此，有必要提供一种触控显示设备及其制备方法，解决现有技术中增大产品厚度及触控不灵敏的缺陷。
 技术问题
现有技术中外挂式触控薄膜贴合技术会增大产品厚度而且不利于窄边框产品设计。另外直接在OLED面板上制作触控面板会受到下方OLED面板的信号的干扰，出现触控不灵敏的情况。
 技术解决方案
为了解决上述技术问题，本揭示在TFE封装层上制作触控感应线路，通过触控线路图案设计和架桥结构将触控电极相互之间的的交互感应区增大，有效增强触控感应信号，从而相对减弱了触控面板下方来自OLED面板的干扰，以克服上述缺陷。
为了达到上述目的，本揭示提供一种触控显示设备及其制备方法，所述触控面板显示设备，包括：一有机发光二极管显示面板，所述有机发光二极管显示面板包括：一薄膜晶体管背板；一发光层，设置于所述薄膜晶体管背板上；一封装层，设置于所述发光层上；一基底层，所述基底层设置于所述封装层上；多条第一电极串，沿一第一方向设置于所述基底层上，其中每一多条第一电极串包括多个第一电极单元；以及与一多条第二电极串，沿一第二方向且与所述多条第一电极串互相绝缘地交错设置于所述基底层上，其中每一多条第二电极串包括多个第二电极单元；其中所述多条第一电极串及所述多条第二电极串设置于同一层，且一第一架桥结构电性连接相邻的第一电极单元或相邻的第二电极单元；
当所述第一架桥结构电性连接相邻的第一电极单元，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，所述第一架桥结构电性连接所述第三电极与所述第一电极单元；
当所述第一架桥结构电性连接相邻的第二电极单元，所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，所述第一架桥结构电性连接所述第四电极与所述第二电极单元。
根据本文描述的触控显示设备的一实施例，所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，一第二架桥结构电性连接所述第四电极与所述第二电极单元。
根据本文描述的触控显示设备的一实施例，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，一第二架桥结构电性连接所述第三电极与所述第一电极单元。
根据本文描述的触控显示设备的一实施例，所述第一电极单元与所述第二电极单元分别包括：一绝缘层设置在所述第一架桥结构或所述第二架桥结构上，并对应所述第一架桥结构或所述第二架桥结构上方设置有通孔；一金属层设置于所述绝缘层上，所述金属层通过所述通孔与所述第一架桥结构或所述第二架桥结构电性连接。
根据本文描述的触控显示设备的一实施例，所述第三电极设置于所述第二电极单元的一内部区域，所述第四电极设置于所述第一电极单元的一内部区域。
根据本文描述的触控显示设备的一实施例，所述第一架桥结构与所述第二架桥结构分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。
根据本文描述的触控显示设备的一实施例，所述触控面板更包括一保护层设置于所述基底层上，所述保护层完全覆盖所述多条第一电极串、所述多条第二电极串、所述第一架桥结构以及所述第二架桥结构。
根据本文描述的触控显示设备的一实施例，所述第一电极单元为一驱动电极，所述第二电极单元为一感应电极。
为了达到上述目的，本揭示另提供一种触控显示设备及其制备方法，所述触控面板显示设备，包括：一有机发光二极管显示面板，所述有机发光二极管显示面板包括：一薄膜晶体管背板；一发光层，设置于所述薄膜晶体管背板上；一封装层，设置于所述发光层上；一基底层，所述基底层设置于所述封装层上；多条第一电极串，沿一第一方向设置于所述基底层上，其中每一多条第一电极串包括多个第一电极单元；以及与一多条第二电极串，沿一第二方向且与所述多条第一电极串互相绝缘地交错设置于所述基底层上，其中每一多条第二电极串包括多个第二电极单元；其中所述多条第一电极串及所述多条第二电极串设置于同一层，且一第一架桥结构电性连接相邻的第一电极单元或相邻的第二电极单元。
根据本文描述的触控显示设备的一实施例，所述第一架桥结构电性连接相邻的第一电极单元，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，所述第一架桥结构电性连接所述第三电极与所述第一电极单元，以及所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，一第二架桥结构电性连接所述第四电极与所述第二电极单元。
根据本文描述的触控显示设备的一实施例，所述第一架桥结构电性连接相邻的第二电极单元，所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，所述第一架桥结构电性连接所述第四电极与所述第二电极单元，以及所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，一第二架桥结构电性连接所述第三电极与所述第一电极单元。
根据本文描述的触控显示设备的一实施例，所述第一电极单元与所述第二电极单元分别包括：一绝缘层设置在所述第一架桥结构或所述第二架桥结构上，并对应所述第一架桥结构或所述第二架桥结构上方设置有通孔；一金属层设置于所述绝缘层上，所述金属层通过所述通孔与所述第一架桥结构或所述第二架桥结构电性连接。
根据本文描述的触控显示设备的一实施例，所述第三电极设置于所述第二电极单元的一内部区域，所述第四电极设置于所述第一电极单元的一内部区域。
根据本文描述的触控显示设备的一实施例，所述第一架桥结构与所述第二架桥结构分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。
根据本文描述的触控显示设备的一实施例，所述触控面板更包括一保护层设置于所述基底层上，所述保护层完全覆盖所述多条第一电极串、所述多条第二电极串、所述第一架桥结构以及所述第二架桥结构。
根据本文描述的触控显示设备的一实施例，所述第一电极单元为一驱动电极，所述第二电极单元为一感应电极。
为了达到上述目的，本揭示另提供一种触控显示设备的制备方法，包括：提供一有机发光二极管显示面板，所述有机发光二极管显示面板包括一薄膜晶体管背板；提供一发光层于所述薄膜晶体管背板上；提供一封装层于所述发光层上；提供一基底层于所述封装层上；提供一金属网格线路于所述基底层上，所述金属网格线路配置为多条第一电极串与多条第二电极串，其中每一多条第一电极串包括多个第一电极单元，每一多条第二电极串包括多个第二电极单元；形成一第一架桥结构于相邻两所述第一电极单元或相邻的第二电极单元间。
根据本文描述的触控显示设备的制造方法的一实施例，所述第一架桥结构电性连接相邻的第一电极单元，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，所述第一架桥结构电性连接所述第三电极与所述第一电极单元，以及所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，一第二架桥结构电性连接所述第四电极与所述第二电极单元。
根据本文描述的触控显示设备的制造方法的一实施例，所述第一架桥结构电性连接相邻的第二电极单元，所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，所述第一架桥结构电性连接所述第四电极与所述第二电极单元，以及所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，一第二架桥结构电性连接所述第三电极与所述第一电极单元。
 有益效果
本揭示提供的触控显示设备及其制备方法，通过在柔性主动矩阵有机发光二极管显示屏的薄膜封装层上制作金属网格触控感应线路，实现柔性有机发光二极管屏幕的内嵌式触控面板技术。相对目前常见设计可有效减薄面板产品厚度，而且采用金属网格作为触控感应线路可以使面板产品具有良好的耐弯折特性，实现柔性显示触控。再者，本揭示提出的金属网格触控结构可以有效减少触控显示设备在制程中的膜贴合次数，降低面板产品厚度，同时利用不同的架桥结构连接触控电极和周边感应电极的设计有效增强了触控感应信号及扩大触控感应区域,提升了触控感应的灵敏度。
 附图说明
图1为现有外挂式触控薄膜贴合面板结构侧视剖面示意图。
图2为现有玻璃封装的刚性内嵌式触控面板结构侧视剖面示意图。
图3为本揭示触控显示设备的触控面板上视示意图。
图4为本揭示触控显示设备的侧视剖面示意图。
图5为本揭示触控显示设备的金属网格线路示意图。
图6为本揭示触控显示设备的触控面板示意图。
图7为本揭示触控显示设备的第一架桥结构示意图。
图8为本揭示触控显示设备的第二架桥结构示意图。
图9为本揭示触控显示设备的制造方法步骤示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。
下面结合附图详细本揭示实施例的实现过程。
请参阅图3-6，其为本揭示的触控显示设备的上视及侧视剖面示意图，以及触控面板示意图。在本揭示的一实施例中，所述触控面板显示设备包括：一有机发光二极管显示面板110与一触控面板210，所述有机发光二极管显示面板110包括：一薄膜晶体管背板111；一发光层112，设置于所述薄膜晶体管背板111上；一封装层113，设置于所述发光层112上；所述触控面板210包括：一基底层211，所述基底层211设置于所述封装层113上；多条第一电极串212，沿一第一方向设置于所述基底层211上，其中每一多条第一电极串212包括多个第一电极单元2121；以及多条第二电极串213，沿一第二方向且与所述多条第一电极串212互相绝缘地交错设置于所述基底层211上，其中每一多条第二电极串213包括多个第二电极单元2131；其中所述多条第一电极串212及所述多条第二电极串213设置于同一层，且一第一架桥结构300电性连接相邻的第一电极单元2121或相邻的第二电极单元2131。于图6的实施例中，第一架桥结构300电性连接相邻的第一电极单元2121。此外，于图6的实施例中，所述第一方向为水平方向，所述第二方向为垂直方向，然而本揭示并不限于此。
所述触控面板210的基底层211具有显示区域211a与非显示区域211b。触控面板210包含多个电极区块。这些电极区块可分为在显示区域211a内排列成阵列形状的多条第一电极串212，以及设置在排列成阵列形状的多条第一电极串212周围的多条第二电极串213，其中多条第一电极串212与多条第二电极串213的形状与面积相同，但第一电极串212与第二电极串213中的浮置电极或虚拟电极(将如后述)图案的形状或面积并不相同。
在一些实施例中，所述第一电极单元2121可为驱动电极，所述第二电极单元2131则为感应电极。在另一些实施例中，所述第一电极单元2121可为感应电极，所述第二电极单元2131则为驱动电极。所述第一电极单元2121与所述第二电极单元2131的材质可包含透明导电材料，例如铟锡氧化物(indium tin oxide,ITO)、铟锌氧化物(indium zinc oxide,IZO)、掺氟氧化锡(fluorine doped tin oxide,FTO)、掺铝氧化锌(aluminum doped zinc oxide,AZO)、掺镓氧化锌(gallium doped zinc oxide,GZO)，或者其他透光导电材料，例如金属网格线路(metal mesh)、奈米银线(si1ver nano-wire，SNW)等。
如图3所示，所述多条第一电极串212与所述多条第二电极串213的触控感应线路采用Metal-mesh金属网格技术，构成上述触控感应线路的多条金属网格线路400避开有机发光二极管显示面板110的像素发光区130，并在相邻像素点140, 141, 142(例如不同颜色光的像素点)的一中间部分走线，多个第一电极单元2121和多个第二电极单元2131制作在同一层，通过Metal-mesh金属网格技术产生的开孔150将多个第一电极单元2121和多个第二电极单元2131分隔开，金属网格线路400之间的开孔150的距离不超过相邻像素发光区之间的距离。其中多个第一电极单元2121和多个第二电极单元2131之一通过架桥的结构连接，将于后详述。
多条第一电极串212与多条第二电极串213是空间上相互绝缘(spatially isolated)的。
具体来说，第二电极单元2131包括了位于所述第二电极单元2131内部的第三电极2133。在本实施例中，第二电极单元和第三电极之间具有间隙，即第二电极单元2131和第三电极2133彼此并没有电性连接，可以有效控制电容值大小，并屏蔽其他杂讯电容信号；相同地，第一电极单元2121包括位于所述第一电极单元2121内部的第四电极2123，第一电极单元2121和第四电极2123之间具有间隙，彼此并没有电性连接。在本实施例中，第三电极2133及第四电极2123是分别位于第一电极单元2121与第二电极单元2131的内部。
在本揭示的一实施例中，当所述第一架桥结构300电性连接相邻的两第一电极单元2121，所述第二电极单元2131还包括位于所述第二电极单元2131内部的一第三电极2133(例如前述的浮置电极或虚拟电极)，所述第一架桥结构300电性连接所述第三电极2133与所述第一电极单元2121，以及所述第一电极单元2121还包括位于所述第一电极单元2121内部的一第四电极2123(例如前述的浮置电极或虚拟电极)，一第二架桥结构600电性连接所述第四电极2133与所述第二电极单元2131。
本实施例中，所述第一电极单元2121的两端分别设置了所述第一架桥结构300。所述第一架桥结构300将两个相邻第一电极单元2121相互连接，实现信号的有效传达。并且，所述第一架桥结构300将所述第二电极单元2131内部的第三电极2133与第一电极单元2121导通，实现第一电极单元2121的感应区域的增大，加强触控驱动区域和感应区域的交互能力。如图7所示，通过多个锯齿形的所述第一架桥结构300将相邻的相互隔离的所述第一电极单元2121导通，同时将本属于所述第二电极单元2131内部的第三电极2133与所述第一电极单元2121导通，实现所述第一电极单元2121与所述第二电极单元2131感应区域的扩大，增强触控感应信号。
而在此实施例中，所述第二电极单元2131的最外围设置了所述第二架桥结构600，将所述第一电极单元2121内部的第四电极2123与所述第二电极单元2131导通，扩大所述第二电极单元2131感应区域，增加所述第二电极单元2131与所述第一电极单元2121之间的触控感应面积，有效增大触控感应信号与灵敏度。
在本揭示的另一实施例中，所述第一架桥结构300可以电性连接相邻的第二电极单元2131而不是电性连接相邻的第一电极单元2121，所述第一电极单元2121还包括位于所述第一电极单元2121内部的第四电极2123，所述第一架桥结构300电性连接所述第四电极2123与所述第二电极单元2131，以及所述第二电极单元2131还包括位于所述第二电极单元2131内部的第三电极2133，第二架桥结构600电性连接所述第三电极2133与所述第一电极单元2121。
即所述第二电极单元2131的两端分别设置了所述第一架桥结构300，即所述第一架桥结构300设置于两相邻第二电极单元2131间。所述第一架桥结构300将两个相邻第二电极单元2131相互连接，实现信号的有效传达。并且，所述第一架桥结构300将所述第一电极单元2121内部的第四电极2123与第二电极单元2131导通，实现第二电极单元2131的感应区域的增大，加强触控驱动区域和感应区域的交互能力。
并且在此实施例中，所述第一电极单元2121的最外围设置了所述第二架桥结构600，将所述第二电极单元2131内部的第三电极2133与所述第一电极单元2121导通，扩大所述第一电极单元2121的感应区域，增加所述第一电极单元2121与所述第二电极单元2131之间的触控感应面积，有效增大触控感应信号与灵敏度，如图8所示。
再如图4所示，所述基底层211（buffer layer）设置于所述封装层113上，所述基底层211优选为氮化硅构成，但不限于此。于所述基底层211上形成金属网格线路400形式的一电极金属层包括多个第一电极串212及多个第二电极串213。更具体而言，一第一金属层221设置于所述封装层113上，所述第一金属层221作为所述第一架桥结构300。另外，一绝缘层231设置在所述第一架桥结构300上，并对应所述第一架桥结构300上方设置有通孔500；一第二金属层241设置于所述绝缘层231上，所述第二金属层241通过所述通孔500与所述第一架桥结构300电性连接。所述第二金属层241被配置为包含所述第一电极单元2121和所述第二电极单元2131的一触控电极图案，即构成金属网格线路400。所述第一架桥结构300通过绝缘层231上的通孔500将相互隔离的所述第一电极单元2121与所述第二电极单元2131导通，实现互电容感应功能，如图4所示。并且所述触控面板更包括一保护层251设置于所述基底层211上，完全覆盖所述多条第一电极串212、所述多条第二电极串213、所述第一架桥结构300以及所述第二架桥结构600。
所述第一架桥结构300与所述第二架桥结构600分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。更具体的说，形成所述第一架桥结构300与所述第二架桥结构600的金属采用钛-铝-钛或者钼-铝-钼等金属依序层迭构成。构成金属网格线路400的第二金属层采用钛-铝-钛三层复合金属的形式构成，既能防止金属氧化，又能增强触控感应线路的耐折性能。优选地，金属网格线路400的线宽在0.5微米至5微米的范围内。
请参阅图9并配合图4所示，其为本揭示触控显示设备的制造方法的步骤示意图。本揭示触控显示设备的制造方法包括：步骤S01：提供一有机发光二极管显示面板110，所述有机发光二极管显示面板110包括一薄膜晶体管背板111；步骤S02：提供一发光层112于所述薄膜晶体管背板111上；步骤S03：提供一封装层113于所述发光层112上；步骤S04：提供一触控面板210，所述触控面板210包括一基底层211，形成于所述封装层113上；步骤S05：提供一金属网格线路400于所述基底层211上，所述金属网格线路400配置为多条第一电极串212与多条第二电极串213，其中每一多条第一电极串212包括多个第一电极单元2121，每一多条第二电极串213包括多个第二电极单元2131；步骤S06：形成一第一架桥结构300于相邻两所述第一电极单元2121或相邻的第二电极单元2131间。
在一些实施例中，所述第一电极单元2121可为驱动电极，所述第二电极单元2131则为感应电极。在另一些实施例中，所述第一电极单元2121可为感应电极，所述第二电极单元2131则为驱动电极。所述第一电极单元2121与所述第二电极单元2131的材质可包含透明导电材料，例如铟锡氧化物(indium tin oxide,ITO)、铟锌氧化物(indium zinc oxide,IZO)、掺氟氧化锡(fluorine doped tin oxide,FTO)、掺铝氧化锌(aluminum doped zinc oxide,AZO)、掺镓氧化锌(gallium doped zinc oxide,GZO)，或者其他透光导电材料，例如金属网格线路(metal mesh)、奈米银线(si1ver nano-wire，SNW)等。
更详细地说，在封装层上采用Metal-mesh金属网格技术制作金属网格线路400，所述金属网格线路400避开所述有机发光二极管显示面板110的像素点的发光区，在相邻像素点的中间区域走线，所述金属网格线路400的线宽在0.5微米至5微米的范围内。具体做法是先在封装层113上形成所述层基底层211（buffer layer），所述基底层211优选为氮化硅材料构成，然后在基底层211上形成一第一金属层作为所述第一架桥结构300。再于所述第一架桥结构300上形成一绝缘层231，并采用蚀刻工艺在所述第一架桥结构300上方形成多个通孔500，之后制作一第二金属层241于所述绝缘层231上，并将第二金属层241蚀刻出包含所述第一电极单元2121和所述第二电极单元2131的一触控电极图案，所述第一架桥结构300通过绝缘层231上的通孔500将相互隔离的所述第一电极单元2121与所述第二电极单元2131导通，实现互电容感应功能。
另外在所述第一电极单元2121或所述第二电极单元2131的最外围设置了一第二架桥结构600，当所述第一架桥结构300电性连接相邻的第一电极单元2121。所述第二电极单元2131还包括位于所述第二电极单元2131内部的一第三电极2133(例如前述的浮置电极或虚拟电极)，所述第一架桥结构300电性连接所述第三电极2133与所述第一电极单元2121，以及所述第一电极单元2121还包括位于所述第一电极单元2121内部的一第四电极2123(例如前述的浮置电极或虚拟电极)，一第二架桥结构600电性连接所述第四电极2123与所述第二电极单元2131。
在此实施例中，所述第二电极单元2131的最外围设置了所述第二架桥结构600，将所述第一电极单元2121内部的第四电极2123与所述第二电极单元2131导通，扩大所述第二电极单元2131的感应区域，增加所述第二电极单元2131与所述第一电极单元2121之间的触控感应的面积，有效增大触控感应信号与灵敏度。
在本揭示的另一实施例中，当所述第一架桥结构300电性连接相邻的第二电极单元2131，所述第一电极单元2121还包括位于所述第一电极单元2121延伸的一第四电极2123，所述第一架桥结构300电性连接所述第四电极2123与所述第二电极单元2131，以及所述第二电极单元2131还包括位于所述第二电极单元2131内部的一第三电极2133，第二架桥结构600电性连接所述第三电极2133与所述第一电极单元2121。
即所述第二电极单元的两端分别设置了所述第一架桥结构300，即所述第一架桥结构300设置于两相邻第二电极单元2131间。所述第一架桥结构300将两个相邻第二电极单元2131相互连接，实现信号的有效传达。并且，所述第一架桥结构300将所述第一电极单元2121内部的第四电极2123与第二电极单元2131导通，实现第二电极单元2131的感应区域的增大，加强触控驱动区域和感应区域的交互能力。
并且在此实施例中，所述第一电极单元2121的最外围设置了所述第二架桥结构600，将所述第二电极单元2131内部的第三电极2133与所述第一电极单元2121导通，扩大所述第一电极单元2121的感应区域，增加所述第一电极单元2121与所述第二电极单元2131之间的触控感应面积，有效增大触控感应信号与灵敏度。
通过上述设计将所述第一电极单元2121内部的第四电极2123(浮置电极/虚拟电极)与所述第二电极单元2131导通，或是将所述第二电极单元2131内部的第三电极2133 (浮置电极/虚拟电极)与所述第一电极单元2121导通，从而可以扩大所述第一电极单元2121与所述第二电极单元2131的触控感应区域，增加所述第一电极单元2121与所述第二电极单元2131触控感应面积，有效增大触控感应信号。
本揭示提供的触控显示设备及其制备方法，通过在柔性主动矩阵有机发光二极管显示屏的薄膜封装层上制作金属网格触控感应线路，实现柔性有机发光二极管屏幕的内嵌式触控面板技术。相对目前常见设计可有效减薄面板产品厚度，而且采用金属网格作为触控感应线路可以使面板产品具有良好的耐弯折特性，实现柔性显示触控。再者，本揭示提出的金属网格触控结构可以有效减少触控显示设备在制程中的膜贴合次数，降低面板产品厚度，同时利用不同的架桥结构连接触控电极和周边感应电极的设计有效增强了触控感应信号及扩大触控感应区域,提升了触控感应的灵敏度。
以上所述是本揭示的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本揭示的保护范围。

Claims (19)

  1. 一种触控显示设备，包括：
    一有机发光二极管显示面板，所述有机发光二极管显示面板包括：
    一薄膜晶体管背板；
    一发光层，设置于所述薄膜晶体管背板上；
    一封装层，设置于所述发光层上；
    一基底层，所述基底层设置于所述封装层上；
    多条第一电极串，沿一第一方向设置于所述基底层上，其中每一多条第一电极串包括多个第一电极单元；以及
    多条第二电极串，沿一第二方向且与所述多条第一电极串互相绝缘地交错设置于所述基底层上，其中每一多条第二电极串包括多个第二电极单元；
    其中所述多条第一电极串及所述多条第二电极串设置于同一层，且一第一架桥结构电性连接相邻的第一电极单元或相邻的第二电极单元；
    当所述第一架桥结构电性连接相邻的第一电极单元，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，所述第一架桥结构电性连接所述第三电极与所述第一电极单元；
    当所述第一架桥结构电性连接相邻的第二电极单元，所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，所述第一架桥结构电性连接所述第四电极与所述第二电极单元。
  2. 根据权利要求1所述的触控显示设备，其中所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，一第二架桥结构电性连接所述第四电极与所述第二电极单元。
  3. 根据权利要求1所述的触控显示设备，其中所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，一第二架桥结构电性连接所述第三电极与所述第一电极单元。
  4. 根据权利要求2所述的触控显示设备，其中所述第一电极单元与所述第二电极单元分别包括：
    一绝缘层设置在所述第一架桥结构或所述第二架桥结构上，并对应所述第一架桥结构或所述第二架桥结构上方设置有通孔；
    一金属层设置于所述绝缘层上，所述金属层通过所述通孔与所述第一架桥结构或所述第二架桥结构电性连接。
  5. 根据权利要求2所述的触控显示设备，其中所述第三电极设置于所述第二电极单元的一内部区域，所述第四电极设置于所述第一电极单元的一内部区域，并且所述第一架桥结构与所述第二架桥结构分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。
  6. 根据权利要求3所述的触控显示设备，其中所述第一电极单元与所述第二电极单元分别包括：
    一绝缘层设置在所述第一架桥结构或所述第二架桥结构上，并对应所述第一架桥结构或所述第二架桥结构上方设置有通孔；
    一金属层设置于所述绝缘层上，所述金属层通过所述通孔与所述第一架桥结构或所述第二架桥结构电性连接。
  7. 根据权利要求3所述的触控显示设备，其中所述第三电极设置于所述第二电极单元的一内部区域，所述第四电极设置于所述第一电极单元的一内部区域，并且所述第一架桥结构与所述第二架桥结构分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。
  8. 一种触控显示设备，包括：
    一有机发光二极管显示面板，所述有机发光二极管显示面板包括：
    一薄膜晶体管背板；
    一发光层，设置于所述薄膜晶体管背板上；
    一封装层，设置于所述发光层上；
    一基底层，所述基底层设置于所述封装层上；
    多条第一电极串，沿一第一方向设置于所述基底层上，其中每一多条第一电极串包括多个第一电极单元；以及
    多条第二电极串，沿一第二方向且与所述多条第一电极串互相绝缘地交错设置于所述基底层上，其中每一多条第二电极串包括多个第二电极单元；
    其中所述多条第一电极串及所述多条第二电极串设置于同一层，且一第一架桥结构电性连接相邻的第一电极单元或相邻的第二电极单元。
  9. 根据权利要求8所述的触控显示设备，其中所述第一架桥结构电性连接相邻的第一电极单元，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，所述第一架桥结构电性连接所述第三电极与所述第一电极单元，以及所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，一第二架桥结构电性连接所述第四电极与所述第二电极单元。
  10. 根据权利要求8所述的触控显示设备，其中所述第一架桥结构电性连接相邻的第二电极单元，所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，所述第一架桥结构电性连接所述第四电极与所述第二电极单元，以及所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，一第二架桥结构电性连接所述第三电极与所述第一电极单元。
  11. 根据权利要求9所述的触控显示设备，其中所述第一电极单元与所述第二电极单元分别包括：
    一绝缘层设置在所述第一架桥结构或所述第二架桥结构上，并对应所述第一架桥结构或所述第二架桥结构上方设置有通孔；
    一金属层设置于所述绝缘层上，所述金属层通过所述通孔与所述第一架桥结构或所述第二架桥结构电性连接。
  12. 根据权利要求9所述的触控显示设备，其中所述第三电极设置于所述第二电极单元的一内部区域，所述第四电极设置于所述第一电极单元的一内部区域。
  13. 根据权利要求9所述的触控显示设备，其中所述第一架桥结构与所述第二架桥结构分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。
  14. 根据权利要求10所述的触控显示设备，其中所述第一电极单元与所述第二电极单元分别包括：
    一绝缘层设置在所述第一架桥结构或所述第二架桥结构上，并对应所述第一架桥结构或所述第二架桥结构上方设置有通孔；
    一金属层设置于所述绝缘层上，所述金属层通过所述通孔与所述第一架桥结构或所述第二架桥结构电性连接。
  15. 根据权利要求10所述的触控显示设备，其中所述第三电极设置于所述第二电极单元的一内部区域，所述第四电极设置于所述第一电极单元的一内部区域。
  16. 根据权利要求10所述的触控显示设备，其中所述第一架桥结构与所述第二架桥结构分别由一第一导电层、一中间金属层以及一第二导电层依序层迭构成。
  17. 一种触控显示设备的制备方法，包括：
    提供一有机发光二极管显示面板，所述有机发光二极管显示面板包括一薄膜晶体管背板；
    提供一发光层于所述薄膜晶体管背板上；
    提供一封装层于所述发光层上；
    提供一基底层于所述封装层上；
    提供一金属网格线路于所述基底层上，所述金属网格线路配置为多条第一电极串与多条第二电极串，其中每一多条第一电极串包括多个第一电极单元，每一多条第二电极串包括多个第二电极单元；以及
    形成一第一架桥结构于相邻两所述第一电极单元或相邻的第二电极单元间。
  18. 根据权利要求17所述的触控显示设备的制备方法，其中所述第一架桥结构电性连接相邻的第一电极单元，所述第二电极单元还包括位于所述第二电极单元内部的一第三电极，所述第一架桥结构电性连接所述第三电极与所述第一电极单元，以及所述第一电极单元还包括位于所述第一电极单元内部的一第四电极，一第二架桥结构电性连接所述第四电极与所述第二电极单元。
  19. 根据权利要求17所述的触控显示设备的制备方法，其中所述第一架桥结构电性连接相邻的第二电极单元，所述第一电极单元还包括内部所述第一电极单元内部的一第四电极，所述第一架桥结构电性连接所述第四电极与所述第二电极单元，以及所述第二电极单元还包括内部所述第二电极单元内部的一第三电极，一第二架桥结构电性连接所述第三电极与所述第一电极单元。
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