WO2020116454A1 - Dispositif optique à semi-conducteur - Google Patents

Dispositif optique à semi-conducteur Download PDF

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Publication number
WO2020116454A1
WO2020116454A1 PCT/JP2019/047245 JP2019047245W WO2020116454A1 WO 2020116454 A1 WO2020116454 A1 WO 2020116454A1 JP 2019047245 W JP2019047245 W JP 2019047245W WO 2020116454 A1 WO2020116454 A1 WO 2020116454A1
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WIPO (PCT)
Prior art keywords
optical semiconductor
opening
lead
semiconductor device
exposed surface
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PCT/JP2019/047245
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English (en)
Japanese (ja)
Inventor
山本康雄
平川裕之
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株式会社ダイセル
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Publication of WO2020116454A1 publication Critical patent/WO2020116454A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to an optical semiconductor device including an optical semiconductor element such as a light emitting diode.
  • an optical semiconductor element such as a light emitting diode.
  • Opto-semiconductor devices equipped with photo-semiconductor elements have longer life, stable operation, and faster response speed than other light sources such as light bulbs, fluorescent lamps, neon tubes, and halogen lamps. It has features such as that.
  • Such optical semiconductor devices are being put to practical use in various applications. For example, in lighting applications (general indoor lighting in homes and offices, street lights, etc.), display applications (traffic lights, etc.), light source applications (backlights for liquid crystal televisions, etc.), and communication applications (infrared remote controllers, etc.).
  • lighting applications generally indoor lighting in homes and offices, street lights, etc.
  • display applications traffic lights, etc.
  • light source applications backlights for liquid crystal televisions, etc.
  • communication applications infrared remote controllers, etc.
  • the optical semiconductor device Y which is an example of a conventional optical semiconductor device.
  • the optical semiconductor device Y is formed in the form of a so-called mold array package (MAP), and includes a resin molding 110, a set of leads 120 and 130, an LED element 140 that is a light emitting diode, and a transparent resin. And a section 150.
  • MAP mold array package
  • the resin molded body 110 is a resin body molded in a shape that holds the leads 120 and 130 by so-called insert molding with the leads 120 and 130, and has an opening 112 whose opening shape is defined by the inclined surface 111. At least the inclined surface 111 of the resin molded body 110 is provided with light reflectivity in a predetermined manner.
  • the lead 120 has an exposed surface 121 that faces the opening 112, and has an exposed surface 122 that is exposed to the outside of the device on the side opposite to the opening 112.
  • the lead 130 has an exposed surface 131 that faces the opening 112, and also has an exposed surface 132 that is exposed to the outside of the device on the side opposite to the opening 112.
  • the exposed surfaces 121 and 131 of the leads 120 and 130 form a pair of terminals for external connection in the optical semiconductor device Y.
  • the LED element 140 has electrode portions (not shown) on the upper surface side and the lower surface side in FIG. 15, and is mounted on the exposed surface 121 in the opening 112 and electrically connected to the leads 120. And they are mechanically connected. At the same time, the LED element 140 is electrically connected to the exposed surface 131 of the lead 130 via the bonding wire W.
  • the transparent resin portion 150 is a transparent resin body filled in the opening 112 of the resin molded body 110 and cured, and seals the LED element 140 and the like in the opening 112.
  • the light passes through the transparent resin portion 150 with or without reflection inside the opening 112 and passes through the outside of the opening 112. Is emitted to.
  • an optical semiconductor device including a portion in which a resin molded body (resin molded body 110 in the optical semiconductor device Y) and a lead member (leads 120 and 130 in the optical semiconductor device Y) are integrally molded, the resin molded body and the lead member There is a significant difference in coefficient of thermal expansion between and. Therefore, conventionally, in the manufacturing process or mounting process of an optical semiconductor device, internal stress is generated at various places in the optical semiconductor device due to the difference in the coefficient of thermal expansion, which causes distortion such as warpage of the device. There is. The warp or other distortion in the optical semiconductor device may cause structural deterioration such as partial detachment of the lead member from the resin molded body, and eventually characteristic deterioration.
  • the present invention has been devised under the circumstances as described above, and an object thereof is to provide an optical semiconductor device suitable for realizing high light utilization efficiency while suppressing distortion such as warpage. Especially.
  • an optical semiconductor device includes an optical semiconductor element, a first lead and a second lead that are separated from each other, and a resin molded body that is integrated with these leads.
  • the resin molded body is a resin body molded by, for example, insert molding while partially incorporating the first and second leads therein.
  • the resin molded body has an opening that is a reflector opening with an inner wall surface for light reflection and a partial bottom surface for light reflection (the partial bottom surface forms a part of the bottom surface of the opening).
  • the inner wall surface of the reflector opening is preferably inclined so that the opening shape spreads from the bottom surface of the opening to the opening end.
  • the first lead has a first exposed surface facing the opening of the resin molded body and forming a part of the bottom surface of the opening, and the second lead is exposed on the side opposite to the opening. It has an exposed surface.
  • the optical semiconductor element is mounted on the first exposed surface of the first lead.
  • the first lead preferably has an electrode portion extending from the resin molded body to the outside. In this manner, the first lead is held while being partially covered with the resin molding.
  • the second lead has a third exposed surface located on the bottom surface of the opening of the resin molded body and facing the opening.
  • the third exposed surface (a part of the second lead) on the partial bottom surface is in the first exposed surface (a part of the first lead) on the partial bottom surface in the direction orthogonal to the separating direction of the first and second leads. It is smaller than the edge on the second lead side.
  • the optical semiconductor element on the first exposed surface of the first lead is connected to the third exposed surface via a bonding wire.
  • the second lead preferably has an electrode portion extending from the resin molded body to the outside. In this manner, the second lead is held while being partially covered with the resin molding.
  • the third exposed surface of the second lead is, as described above, the first exposed surface of the first lead in the direction orthogonal to the separating direction of the first and second leads. It is smaller than the second lead side edge.
  • the width of the third exposed surface of the second lead is narrower than the edge of the first exposed surface of the first lead on the second lead side in the direction (width direction) orthogonal to the separating direction of the both leads.
  • an optical semiconductor device that includes a portion where a resin molded body and a lead member are integrally molded, there is a significant difference in coefficient of thermal expansion between the resin molded body and the lead member. Therefore, in practice, the larger the lead member or the area thereof (for example, the larger the ratio of the lead member to the integrated body of the resin molded body and the lead member within a predetermined range), the manufacturing process of the optical semiconductor device. Internal stress generated in the optical semiconductor device through the mounting process and the mounting process tends to be large. This internal stress can cause distortion such as warpage in the manufactured optical semiconductor device.
  • the configuration in which the third exposed surface of the second lead is narrower than the first exposed surface of the first lead as described above has the third exposed surface and the second exposed surface including the third exposed surface. This is suitable for reducing the internal stress that occurs in the optical semiconductor device by reducing the area or size of the leads, and thus for suppressing distortion such as warpage of the device.
  • the third exposed surface of the second lead (the portion where the second lead faces the reflector opening) is on the partial bottom surface which is a part of the resin molded body in the reflector opening as described above. Located in. That is, the surface of the second lead opposite to the third exposed surface is covered with the resin molded body and is in close contact with the resin molded body.
  • Such a configuration is suitable for suppressing the deformation of the second lead including the third exposed surface region, and is therefore suitable for suppressing distortion such as warpage of the present optical semiconductor device.
  • the third exposed surface (opening) of the second lead is formed in the direction (width direction) orthogonal to the separating direction of the first and second leads. Located on the partial bottom surface of the portion) is narrower than the first exposed surface of the first lead. A region of the partial bottom surface, which is a part of the resin molded body, directly facing the reflector opening portion extends around the third exposed surface of the second lead on the bottom surface of the opening portion. Such a configuration is suitable for securing an area of a region directly facing the reflector opening on the partial bottom surface which is a part of the resin molded body.
  • the optical semiconductor device of the present invention is suitable for realizing high light utilization efficiency while suppressing distortion such as warpage.
  • suppressing distortion such as warpage contributes to ensuring high light emission reliability.
  • realization of high light utilization efficiency contributes to ensuring high energy efficiency. Therefore, the present optical semiconductor device is suitable for designing as a light emitting device having high emission reliability and high energy efficiency.
  • the area of the third exposed surface is preferably 30% or less, more preferably 25% or less, more preferably 20% or less of the area of the first exposed surface.
  • Such a configuration is suitable for reducing the area or size of the third exposed surface and the second lead including the third exposed surface and reducing the internal stress generated in the present optical semiconductor device. It is suitable for suppressing distortion.
  • the configuration is suitable for ensuring the area of the region directly facing the reflector opening on the partial bottom surface that is a part of the resin molded body, and in turn realizes high light utilization efficiency in the present optical semiconductor device. It is suitable for this.
  • the opening (reflector opening) of the resin molded body may have a circular opening shape such as a perfect circle, or may have an opening shape extending in the separating direction of the first and second leads. You may. Examples of the opening shape thus extended include an elliptical shape and a rounded rectangular shape.
  • the opening when the opening (reflector opening) of the resin molded body has the opening shape extended as described above, the opening preferably has a wide area defined by the inner wall surface and a width.
  • the narrow region and the width-graded region between the wide region and the narrow region have an opening shape in which they are aligned in the separation direction of the first and second leads (on the first exposed surface of the first lead).
  • the optical semiconductor element is located in a wide area, for example). More preferably, in the width-graded region of the opening of the resin molded body, the inner wall surface of the opening has an inner curved surface.
  • FIG. 1 is a perspective view of an optical semiconductor device according to one embodiment of the present invention.
  • 2 is a plan view of the optical semiconductor device shown in FIG. 1.
  • FIG. 3 is a sectional view taken along the line III-III in the optical semiconductor device shown in FIG. 2.
  • FIG. 4 is a sectional view taken along line IV-IV in the optical semiconductor device shown in FIG. 2.
  • FIG. 2 is a back view of the optical semiconductor device shown in FIG. 1. The variation of the opening shape of a reflector opening part is represented.
  • FIG. 9 is a cross-sectional view of a modification of the optical semiconductor device shown in FIG. 1.
  • FIG. 9 is a cross-sectional view of a modification of the optical semiconductor device shown in FIG. 1.
  • FIG. 10 is a sectional view taken along line XX in the optical semiconductor device shown in FIG. 9.
  • FIG. 10 is a partially omitted cross-sectional view taken along the line XI-XI in the optical semiconductor device shown in FIG. 9.
  • FIG. 10 is a cross-sectional view of a modified example of the optical semiconductor device shown in FIG. 9.
  • FIG. 10 is a cross-sectional view of a modified example of the optical semiconductor device shown in FIG. 9. It is a top view of one conventional optical semiconductor device.
  • FIG. 15 is a cross-sectional view taken along the line XV-XV in the optical semiconductor device shown in FIG. 14.
  • FIG. 15 is a back view of the optical semiconductor device shown in FIG. 14.
  • FIG. 1 to 5 show an optical semiconductor device X1 according to an embodiment of the present invention.
  • 1 is a perspective view of the optical semiconductor device X1
  • FIG. 2 is a plan view of the optical semiconductor device X1.
  • 3 is a sectional view of the optical semiconductor device X1 taken along line III-III in FIG. 2
  • FIG. 4 is a sectional view of the optical semiconductor device X1 taken along line IV-IV in FIG.
  • FIG. 5 is a rear view of the optical semiconductor device X1.
  • the optical semiconductor device X1 includes an optical semiconductor element E, a resin molded body 10, leads 20 and 30 separated from each other, and a transparent resin portion 40.
  • the optical semiconductor device X1 is formed in the form of a so-called mold array package (MAP) in this embodiment.
  • MAP mold array package
  • the optical semiconductor element E is an element having a light emitting function, and is specifically a light emitting diode (LED) element in the present embodiment.
  • Examples of the semiconductor material for forming the LED element include GaAlAs, AlInGaP, InGaN, GaP, GaAs, and GaAsP.
  • the optical semiconductor element E has electrode portions (not shown) on the upper surface side and the lower surface side in FIG.
  • the resin molded body 10 is a resin body molded by, for example, insert molding while partially incorporating the leads 20 and 30 therein.
  • the resin molded body 10 has an opening 10A that is a reflector opening along with an inner wall surface 11 for light reflection and a partial bottom surface 12 for light reflection (the partial bottom surface 12 is one of the bottom surfaces of the opening 10A). Form a part).
  • the inner wall surface 11 of the opening 10A defines the opening shape of the opening 10A, and in the present embodiment, is inclined so that the opening shape spreads from the bottom surface to the opening end of the opening 10A.
  • a notch (not shown) as a so-called cathode mark is provided at a predetermined portion (for example, a portion closer to the lead 30 than the lead 20 in the plan view shown in FIG. 2) on the opening 10A side of the resin molded body 10. May be formed.
  • a resin molded body 10 is made of, for example, a thermosetting resin composition containing a white pigment.
  • the thermosetting resin include epoxy resin.
  • the white pigment mixed with the thermosetting resin include titanium oxide, alumina, zinc oxide, magnesium oxide, antimony oxide, and zirconium oxide.
  • Examples of commercially available resin materials for forming the resin molded body 10 include "AEW-700" manufactured by Daicel Corporation.
  • the lead 20 (first lead) has an exposed surface 21 (first exposed surface) that faces the opening 10A of the resin molded body 10 and forms a part of the bottom surface of the opening 10A. It also has an exposed surface 22 (second exposed surface) that is exposed on the side opposite to the opening 10A.
  • the above-described optical semiconductor element E is mounted on the exposed surface 21 of the lead 20 via a conductive bonding material such as a solder material or a conductive adhesive, and is electrically and mechanically connected to the lead 20. Part of the heat generated from the optical semiconductor element E when the optical semiconductor device X1 is driven to emit light can be radiated to the outside of the device via the exposed surfaces 21 and 22 of the leads 20.
  • the lead 20 also has such a heat dissipation function. Further, the lead 20 has an electrode portion 20 a extending from the resin molded body 10 to the outside. The extension length of the electrode portion 20a from the resin molded body 10 is, for example, 0.1 to 2 mm. In this manner, the lead 20 is held while being partially covered by the resin molding 10.
  • the lead 30 (second lead) is located on the partial bottom surface 12 of the opening 10A of the resin molded body 10 and is an exposed surface 31 (third exposed surface) facing the opening 10A.
  • the exposed surface 31 (a part of the lead 30) on the partial bottom surface 12 corresponds to the exposed surface 21 (a part of the lead 20) on the partial bottom surface 12 in the direction D 2 orthogonal to the separating direction D 1 of the leads 20, 30. It is smaller than the edge 21a on the side of the lead 30 (represented by a thick line in FIG. 2).
  • the optical semiconductor element E on the exposed surface 21 of the lead 20 is electrically connected to the exposed surface 31 via a bonding wire W.
  • the lead 30 has an electrode portion 30 a extending from the resin molded body 10 to the outside.
  • the extension length of the electrode portion 30a from the resin molded body 10 is, for example, 0.1 to 2 mm. In this manner, the lead 30 is held while being partially covered by the resin molding 10.
  • the leads 20 and 30 are each made of a conductive metal material.
  • the metal material for the lead include Cu, Cu alloy, and 42% Ni—Fe alloy.
  • the thickness of each of the leads 20 and 30 is, for example, 0.1 to 0.3 mm.
  • Such leads 20 and 30 can be formed, for example, by etching or punching a metal plate.
  • the surfaces of the leads 20 and 30 may be subjected to a predetermined plating treatment such as Ag plating treatment.
  • the transparent resin portion 40 is a transparent resin body filled in the opening 10A of the resin molded body 10 and cured, and is made of a semiconductor sealing material having transparency.
  • a sealing material include an epoxy-based sealing material and a silicone-based sealing material.
  • examples of commercially available epoxy-based encapsulants include “CELVENUS W0973” and “CELVENUS W0925” manufactured by Daicel Corporation.
  • Examples of commercially available silicone-based encapsulants include “CELVENUS A2045” and “CELVENUS A0246” manufactured by Daicel Corporation.
  • Such an optical semiconductor element X is manufactured by, for example, a so-called line mold method as described below.
  • a predetermined lead frame is prepared.
  • This lead frame has a frame body having a rectangular shape in plan view and a pattern portion having a predetermined pattern shape for each optical semiconductor device forming area arranged in a line in the frame body.
  • the pattern portion includes a lead portion that will form the leads 20 and 30 described above, a connecting portion that connects the lead portion and the frame body, and a connecting portion that connects the lead portions.
  • Such a lead frame can be manufactured by etching, for example.
  • the above-mentioned resin molded body 10 is formed for each optical semiconductor device formation area of the lead frame.
  • a set of dies having a molding surface for collectively molding a plurality of resin moldings 10 over a plurality of optical semiconductor device forming areas in a lead frame is clamped while interposing the lead frame.
  • the thermosetting resin composition containing the above-mentioned white pigment for forming the resin molded body 10 is supplied into a mold and molded (insert molding).
  • the resin molded body 10 having the above-described opening 10A is formed in each optical semiconductor device formation area.
  • the molding method for example, transfer molding or injection molding is adopted.
  • the optical semiconductor device X1 is isolated by cutting the above-described connecting portion of the pattern portion in the lead frame to separate the leads 20 and 30 for each optical semiconductor device formation area.
  • the optical semiconductor device X1 can be manufactured as described above.
  • the optical semiconductor device X1 When the optical semiconductor device X1 is driven, predetermined power is supplied to the optical semiconductor element E via the leads 20 and 30, and the optical semiconductor element E emits light. A part of the light emitted from the optical semiconductor element E is reflected in the opening 10A of the resin molded body 10, and another part of the light emitted from the optical semiconductor element E is reflected in the opening 10A. Instead, the light passes through the transparent resin portion 40 and is emitted to the outside of the opening 10A.
  • the exposed surface 31 of the lead 30 is, as described above, the end edge 21a (of the exposed surface 21 of the lead 20 in the direction D 2 orthogonal to the separating direction D 1 of the leads 20 and 30). 2 is represented by a thick line).
  • Such a configuration is suitable for suppressing distortion such as warpage in the optical semiconductor device X1. The reason is as follows.
  • an optical semiconductor device that includes a portion where a resin molded body and a lead member are integrally molded, there is a significant difference in coefficient of thermal expansion between the resin molded body and the lead member. Therefore, in practice, the larger the lead member or the area thereof (for example, the larger the ratio of the lead member to the integrated body of the resin molded body and the lead member within a predetermined range), the manufacturing process of the optical semiconductor device. Internal stress generated in the optical semiconductor device through the mounting process and the mounting process tends to be large. This internal stress can cause distortion such as warpage in the manufactured optical semiconductor device.
  • the structure in which the exposed surface 31 of the lead 30 is narrower than the exposed surface 21 of the lead 20 as described above, the exposed surface 31 and the lead 30 including the exposed surface 31 cannot be reduced in area. This is suitable for downsizing and reducing the internal stress generated in the optical semiconductor device X1, and therefore for suppressing distortion such as warpage of the optical semiconductor device X1.
  • the exposed surface 31 of the lead 30 (the portion where the lead 30 faces the opening 10A that is the reflector opening) is a part of the resin molded body 10 in the opening 10A as described above. It is located on a certain bottom surface 12. That is, the surface of the lead 30 opposite to the exposed surface 31 is covered with the resin molding 10 and is in close contact with the resin molding 10.
  • Such a configuration is suitable for suppressing the deformation of the leads 30 including the exposed surface 31 region, and thus is suitable for suppressing distortion such as warpage of the optical semiconductor device X1.
  • the lead 30 is exposed in the direction D 2 (width direction) orthogonal to the separating direction D 1 of the leads 20 and 30.
  • the surface 31 (positioned on the partial bottom surface 12 of the opening 10A) is narrower than the exposed surface 21 of the lead 20.
  • a region of the partial bottom surface 12 which is a part of the resin molded body 10 and which directly faces the opening 10A spreads around the exposed surface 31 of the lead 30 on the bottom surface of the opening 10A, as well shown in FIG. ..
  • Such a configuration is suitable for securing an area of a region directly facing the opening 10A in the partial bottom surface 12 which is a part of the resin molded body 10.
  • the optical semiconductor device X1 of this embodiment is suitable for realizing high light utilization efficiency while suppressing distortion such as warpage.
  • suppression of distortion such as warpage contributes to secure high light emission reliability.
  • achieving high light utilization efficiency contributes to ensuring high energy efficiency. Therefore, the optical semiconductor device X1 is suitable for designing as a light emitting device having high emission reliability and high energy efficiency.
  • the area of the exposed surface 31 in the opening 10A of the lead 30 is preferably 30% or less, more preferably 25% or less of the area of the exposed surface 21 of the lead 20 in the opening 10A. It is more preferably 20% or less.
  • Such a configuration is suitable for reducing the area or size of the exposed surface 31 and the leads 30 including the exposed surface 31 to reduce the internal stress generated in the optical semiconductor device X1, and therefore, the warp of the optical semiconductor device X1 and the like. It is suitable for suppressing distortion.
  • the configuration is suitable for securing an area of a region directly facing the opening 10A in the partial bottom surface 12 which is a part of the resin molded body 10. As a result, high light utilization efficiency in the optical semiconductor device X1. It is suitable for realizing.
  • the opening 10A (reflector opening) of the resin molded body 10 may have a circular opening shape, or may have an opening shape extending in the separating direction D 1 of the leads 20 and 30. May be.
  • Examples of the opening shape that extends in relation to the opening 10A include an elliptical shape as shown in FIG. 6A and a rounded rectangular shape as shown in FIG. 6B.
  • the leads 20, 30 or the electrode portions 20a, 30a thereof have a bent shape that is bent on the side opposite to the opening 10A of the resin molded body 10, as shown in FIG. Good.
  • the optical semiconductor device X1 and the electrode pad portion may be formed, for example, depending on the configuration of the wiring pattern (including the electrode pad portion) of the mounting substrate. It may be easy to connect electrically by soldering.
  • the optical semiconductor element E an LED element having two electrode portions on one surface may be adopted.
  • a semiconductor material for forming such an LED element for example, InGaN can be cited.
  • the optical semiconductor element E (in FIG. 8 thereof) bonded to the lead 20 in the opening 10A of the resin molded body 10 is used.
  • the two electrode portions (not shown) on the upper surface side are electrically connected to the exposed surface 21 of the lead 20 via the bonding wire W, and separately from the exposed surface 31 of the lead 30. Are electrically connected to each other via the bonding wire W.
  • FIG. 9 to 11 show an optical semiconductor device X2 according to an embodiment of the present invention.
  • 9 is a plan view of the optical semiconductor device X2
  • FIG. 10 is a sectional view of the optical semiconductor device X2 taken along line XX of FIG. 9
  • FIG. 11 is a view of light taken along line XI-XI of FIG. It is a partially omitted sectional view of a semiconductor device X2.
  • the optical semiconductor device X2 includes an optical semiconductor element E, a resin molded body 10, leads 20 and 30 separated from each other, and a transparent resin portion 40.
  • the optical semiconductor device X2 differs from the optical semiconductor device X1 in that it has an overall shape in which the leads 20 and 30 extend in the separating direction D 1 .
  • the optical semiconductor device X2 is different from the optical semiconductor device X1 in the shape of the resin molded body 10.
  • the resin molded body 10 of the optical semiconductor device X2 is a resin body molded while partially incorporating the leads 20 and 30 therein, and includes an inner wall surface 11 for light reflection and a partial bottom surface 12 for light reflection. It has an opening 10B that is a reflector opening (the partial bottom surface 12 forms a part of the bottom surface of the opening 10B).
  • the inner wall surface 11 of the opening 10B defines the opening shape of the opening 10B, and in the present embodiment, is inclined so that the opening shape spreads from the bottom surface to the opening end of the opening 10B.
  • the length L 1 of the resin molded body 10 in the separating direction D 1 of the leads 20 and 30 is, for example, 2.5 to 4 mm.
  • the length of the resin molded body 10 in the direction orthogonal to the length L 1 is, for example, 1.8 to 2.5 mm.
  • the opening 10B includes a wide region R1 defined by the inner wall surface 11, a narrow region R2, and a width-graded region R3 therebetween, and these three regions of the leads 20 and 30. It has an opening shape arranged in the separating direction.
  • the inner wall surface 11 has an inner curved surface 11a.
  • the wide region R1 of the opening 10B extends in the separating direction D 1 and is located on the lead 20 (first lead) side of the opening 10B. Further, the thickness T 1 of the portion surrounding the wide region R1 in the resin molded body 10 shown in FIGS. 9 and 11 is, for example, 0.1 to 0.4 mm.
  • the narrow region of the opening 10B R2 is narrower than the wide area R1 in the direction D 2 (width direction) perpendicular to the spacing direction D 1 of the above, and, located on lead 30 (second lead) side of the opening 10B To do.
  • the thickness T 2 of the portion surrounding the wide region R2 in the resin molded body 10 shown in FIGS. 9 and 11 is, for example, 0.2 to 0.8 mm, and preferably 1.1T 1 to 5T 1 .
  • the width length L 2 of the narrow region R2 is, for example, 0.4 ⁇ 1.4 mm, preferably from 0.1L 1 ⁇ 0.5L 1.
  • the lead 20 (first lead) has an exposed surface 21 (first exposed surface) that faces the opening 10B of the resin molded body 10 and forms a part of the bottom surface of the opening 10B, and is different from the opening 10B. It has an exposed surface 22 (second exposed surface) that is exposed on the opposite side. In the present embodiment, the exposed surface 21 faces over the wide region R1, the width gradually changing region R3, and a part of the narrow region R2 of the opening 10B.
  • the optical semiconductor element E is mounted on the exposed surface 21 of the lead 20 in the wide region R1 of the opening 10B via a conductive bonding material such as a solder material or a conductive adhesive, and is electrically and electrically connected to the lead 20. It is mechanically connected. Further, the lead 20 has an electrode portion 20 a extending from the resin molded body 10 to the outside. In this manner, the lead 20 is held while being partially covered by the resin molding 10.
  • the lead 30 (second lead) has an exposed surface 31 (third exposed surface) located on the partial bottom surface 12 of the opening 10B of the resin molded body 10 and facing the opening 10B.
  • the exposed surface 31 (a part of the lead 30) on the partial bottom surface 12 corresponds to the exposed surface 21 (a part of the lead 20) on the partial bottom surface 12 in the direction D 2 orthogonal to the separating direction D 1 of the leads 20, 30. It is smaller than the end edge 21a on the lead 30 side (represented by a thick line in FIG. 9).
  • the optical semiconductor element E on the exposed surface 21 of the lead 20 is connected to the exposed surface 31 via a bonding wire W.
  • the lead 30 has an electrode portion 30 a extending from the resin molded body 10 to the outside. In this manner, the lead 30 is held while being partially covered by the resin molding 10.
  • the optical semiconductor device X2 is the same as described above regarding the optical semiconductor device X1. It is the same.
  • the optical semiconductor device X2 When the optical semiconductor device X2 is driven, predetermined power is supplied to the optical semiconductor element E via the leads 20 and 30, whereby the optical semiconductor element E emits light. A part of the light emitted from the optical semiconductor element E is reflected in the opening 10B of the resin molded body 10, and another part of the light emitted from the optical semiconductor element E is reflected in the opening 10B. Instead, the light passes through the transparent resin portion 40 and is emitted to the outside of the opening 10B.
  • the optical semiconductor device X2 is suitable for realizing high light utilization efficiency while suppressing distortion such as warpage.
  • the length L 2 of the narrow region R2 of the resin molded body 10 is 0.1 L 1 ⁇ 0.5 L 1, and the resin molded body 10
  • the thickness T 2 is preferably 1.1T 1 to 5T 1 .
  • Such a configuration is suitable for securing the contact area between the resin molded body 10 and the leads 20, 30 within a predetermined size and suppressing the deformation of the leads 20, 30. Therefore, the configuration of the optical semiconductor device X2 is It is suitable for suppressing distortion such as warpage.
  • the opening 10B of the resin molded body 10 has the wide region R1 arranged in the separation direction D 1 of the leads 20 and 30, the gradually changing width region R3, and the narrow width region R3. It has an opening shape including a region R2. Further, in the width varying region R3 of the opening 10B of the resin molded body 10, the inner wall surface 11 of the opening 10B has the inner curved surface 11a as described above. These configurations are suitable for achieving high light utilization efficiency.
  • the leads 20, 30 or the electrode portions 20a, 30a thereof have a bent shape that is bent on the side opposite to the opening 10B of the resin molded body 10, as shown in FIG. Good.
  • the optical semiconductor device X2 and the electrode pad portion may be formed, for example, depending on the configuration of the wiring pattern (including the electrode pad portion) of the mounting substrate. It may be easy to connect electrically by soldering.
  • the optical semiconductor element E may be an LED element having two electrode portions on one surface.
  • a semiconductor material for forming such an LED element for example, InGaN can be cited.
  • the optical semiconductor element E mounted on the lead 20 in the opening 10B of the resin molded body 10 (in FIG. 13 thereof). Is electrically connected to the exposed surface 21 of the lead 20 through the bonding wire W, and is also connected to the exposed surface 31 of the lead 30. It is electrically connected via another bonding wire W.
  • X1, X2 Optical semiconductor device E Optical semiconductor element 10 Resin molding 10A, 10B Opening 11 Inner wall surface 11a Inner curved surface 12 Partial bottom surface R1 Wide area R2 Narrow area R3 Width gradually changing area 20 Lead (first lead) 30th lead (second lead) 21 exposed surface (first exposed surface) 22 exposed surface (second exposed surface) 31 exposed surface (third exposed surface) 20a, 30a electrode part 40 transparent resin part W bonding wire
  • An optical semiconductor element A first lead and a second lead that are separated from each other; A resin molded body integrated with the first and second leads, The resin molded body has an opening having an inner wall surface for light reflection that defines an opening shape and a partial bottom surface for light reflection, The first lead has a first exposed surface that faces the opening of the resin molded body and forms a part of a bottom surface of the opening, and is exposed on a side opposite to the opening. Has a second exposed surface, The second lead has a third exposed surface located on the partial bottom surface of the opening of the resin molded body and facing the opening, and the third exposed surface has the first and second leads.
  • the optical semiconductor device wherein the optical semiconductor element is mounted on the first exposed surface of the first lead and is connected to the third exposed surface of the second lead via a bonding wire.
  • the said 1st lead is an optical semiconductor device as described in [1] or [2] which has an electrode part extended outside from the said resin molding.
  • the optical semiconductor device according to any one of [1] to [4], wherein the area of the third exposed surface is 30% or less, 25% or less, or 20% or less of the area of the first exposed surface. .. [6] The optical semiconductor device according to any one of [1] to [5], wherein the opening has a circular opening shape. [7] The optical semiconductor device according to any one of [1] to [5], wherein the opening has an opening shape that extends in a separating direction of the first and second leads. [8] The optical semiconductor device according to [7], wherein the extended opening shape is an elliptical shape or a rounded rectangular shape.
  • the opening includes a wide region defined by the inner wall surface, a narrow region, and a width-graded region between the wide region and the narrow region, which separate the first and second leads.
  • each of the first and second leads has an electrode portion extending from the resin molded body to the outside.
  • the optical semiconductor device of the present invention has the above configuration, it is suitable for realizing high light utilization efficiency while suppressing distortion such as warpage.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif optique à semi-conducteur permettant d'obtenir un rendement d'utilisation de lumière élevé tout en préservant la suppression de contrainte telle que la déformation. Un dispositif optique à semi-conducteur (X1) selon la présente invention est pourvu d'un élément optique à semi-conducteur (E), d'un corps moulé en résine (10), et de fils de connexion (20, 30). Le corps moulé en résine (10) comporte une ouverture (10A) accompagnée d'une surface de paroi interne réfléchissant la lumière (11) et d'une surface inférieure partielle (12). Le fil de connexion (20) présente une surface à nu (21) qui est en regard de l'ouverture (10A) du corps moulé en résine (10) et qui constitue une partie de la surface inférieure de l'ouverture et présente une surface à nu mise à nu sur le côté opposé à l'ouverture (10A). Le fil de connexion (30) présente une surface à nu (31) qui est située sur la surface inférieure partielle (12) de l'ouverture (10A) du corps moulé en résine (10) et qui est en regard de l'ouverture (10A). Dans une direction D2, qui est orthogonale à une direction D1 dans laquelle les fils de connexion (20, 30) sont séparés, cette surface à nu (31) est plus petite qu'un bord (21a) de la surface à nu (21) du fil de connexion (20), ledit bord (21a) étant sur le côté du fil de connexion (30). L'élément optique à semi-conducteur (E) est monté sur la surface à nu (21) du fil de connexion (20) et est connecté à la surface à nu (31) du fil de connexion (30) par l'intermédiaire d'un fil de métallisation (W).
PCT/JP2019/047245 2018-12-05 2019-12-03 Dispositif optique à semi-conducteur WO2020116454A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-227881 2018-12-05
JP2018227881A JP2020092156A (ja) 2018-12-05 2018-12-05 光半導体装置

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WO2020116454A1 true WO2020116454A1 (fr) 2020-06-11

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JP2008258567A (ja) * 2006-11-08 2008-10-23 C I Kasei Co Ltd 発光装置および発光装置の製造方法
JP2010161257A (ja) * 2009-01-09 2010-07-22 Sony Corp 発光装置及び表示装置
KR20110041202A (ko) * 2009-10-15 2011-04-21 주식회사 이츠웰 발광 다이오드 패키지
US20120153327A1 (en) * 2010-12-21 2012-06-21 Daniel Kim Semiconductor package and method of manufacturing the same
JP2012238830A (ja) * 2011-05-09 2012-12-06 Lumirich Co Ltd 発光ダイオード素子
JP2017069539A (ja) * 2015-09-30 2017-04-06 日亜化学工業株式会社 パッケージ及び発光装置、並びにそれらの製造方法
JP2017536700A (ja) * 2014-11-21 2017-12-07 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． リードフレームに直接的にアタッチされるｌｅｄダイを含む発光ダイオード（ｌｅｄ）部品

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JP3964590B2 (ja) * 1999-12-27 2007-08-22 東芝電子エンジニアリング株式会社 光半導体パッケージ
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156704A (ja) * 2004-11-30 2006-06-15 Nichia Chem Ind Ltd 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
JP2008258567A (ja) * 2006-11-08 2008-10-23 C I Kasei Co Ltd 発光装置および発光装置の製造方法
JP2010161257A (ja) * 2009-01-09 2010-07-22 Sony Corp 発光装置及び表示装置
KR20110041202A (ko) * 2009-10-15 2011-04-21 주식회사 이츠웰 발광 다이오드 패키지
US20120153327A1 (en) * 2010-12-21 2012-06-21 Daniel Kim Semiconductor package and method of manufacturing the same
JP2012238830A (ja) * 2011-05-09 2012-12-06 Lumirich Co Ltd 発光ダイオード素子
JP2017536700A (ja) * 2014-11-21 2017-12-07 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． リードフレームに直接的にアタッチされるｌｅｄダイを含む発光ダイオード（ｌｅｄ）部品
JP2017069539A (ja) * 2015-09-30 2017-04-06 日亜化学工業株式会社 パッケージ及び発光装置、並びにそれらの製造方法

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