WO2020110783A1 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
WO2020110783A1
WO2020110783A1 PCT/JP2019/044934 JP2019044934W WO2020110783A1 WO 2020110783 A1 WO2020110783 A1 WO 2020110783A1 JP 2019044934 W JP2019044934 W JP 2019044934W WO 2020110783 A1 WO2020110783 A1 WO 2020110783A1
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Prior art keywords
electrode
laser device
layer
semiconductor laser
opening
Prior art date
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PCT/JP2019/044934
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English (en)
French (fr)
Japanese (ja)
Inventor
啓史 口野
廣山　良治
真治 吉田
克哉 左文字
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Nuvoton Technology Corp Japan
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Panasonic Semiconductor Solutions Co Ltd
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Priority to JP2020558355A priority Critical patent/JP7332623B2/ja
Publication of WO2020110783A1 publication Critical patent/WO2020110783A1/ja
Priority to US17/331,128 priority patent/US12142895B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg

Definitions

  • the present disclosure relates to a semiconductor laser device.
  • a semiconductor laser device has been known as a small-sized and high-output light source (see Patent Document 1, etc.)
  • a strip-shaped ohmic electrode is formed along the optical axis of the laser beam, and the pad electrode is arranged above the ohmic electrode and the insulating layer formed around the ohmic electrode.
  • an adhesion layer made of a Ti layer or the like is arranged between the pad electrode and the insulating layer. This increases the adhesive force between the pad electrode and the insulating layer to suppress the peeling of the pad electrode.
  • a bar-shaped element is formed by cleaving a wafer on which a laminated structure including a semiconductor layer, an ohmic electrode, a pad electrode, etc. is laminated. It Then, the semiconductor laser device is formed by dividing the bar-shaped element into chip-shaped elements.
  • the cleaved surface formed during the above-described cleavage serves as an end surface that forms the laser resonator.
  • the pad electrode located on the cleavage plane may peel off during the cleavage.
  • the present disclosure is intended to solve such a problem, and an object thereof is to provide a semiconductor laser device capable of suppressing electrode peeling.
  • one aspect of a semiconductor laser device is a semiconductor laser device that emits laser light, and a semiconductor laminate including an active layer that generates the laser light, and the semiconductor laminate.
  • An insulating layer arranged above the body, a first electrode arranged above the semiconductor laminate, a second electrode arranged above the first electrode and the insulating layer, and a second electrode
  • the semiconductor laminated body has a front end face that is an emission end face of the laser light and a rear end face that is a face opposite to the front end face.
  • the insulating layer has a first opening formed to extend along the first direction from the front end face toward the rear end face, the adhesion auxiliary layer, in a plan view of the adhesion auxiliary layer.
  • At least a portion has a second opening portion that overlaps the first opening portion, and at least a portion of the first electrode is arranged in the first opening portion and the second opening portion in a plan view of the adhesion auxiliary layer.
  • the second electrode and the adhesion aiding layer are disposed above the insulating layer, between the first opening and at least one of the front end face and the rear end face.
  • the second electrode and the adhesion auxiliary layer are arranged between at least one of the front end face and the rear end face and the first opening and above the insulating layer, and therefore, the front end face and the rear end face are disposed.
  • the adhesiveness (that is, the adhesive force) between the second electrode and the insulating layer on at least one of the end faces can be enhanced. Therefore, peeling of the second electrode on the front end face and the rear end face can be suppressed.
  • the second electrode may not contain Ti.
  • the second electrode may have higher electrical conductivity than the adhesion auxiliary layer.
  • the second electrode may be in contact with the first electrode.
  • the resistance value of the semiconductor laser device can be reduced as compared with the case where another member between the first electrode and the second electrode is inserted.
  • the second electrode may not be in contact with the at least one end surface.
  • the outer peripheral edge of the second electrode is arranged inside the outer peripheral edge of the adhesion auxiliary layer in a plan view of the adhesion auxiliary layer, and The outer peripheral edge of the electrode may be arranged outside the edge of the first opening and the edge of the second opening.
  • the adhesion auxiliary layer is arranged between the outer peripheral edge of the second electrode and the insulating layer, peeling of the outer peripheral edge of the second electrode can be suppressed.
  • the end edge of the second opening on the one end face side may be disposed between and.
  • the first electrode can be arranged up to the edge of the first opening closest to the end face without the adhesion auxiliary layer and the first electrode contacting each other. Therefore, the area in the vicinity of the end face of the first electrode can be maximized.
  • An edge of the second opening on the side end surface side may be arranged between the edge of the one opening and the edge of the one opening.
  • the first electrode can be arranged up to the edge of the first opening closest to the side end face without contact between the adhesion auxiliary layer and the first electrode. Therefore, it is possible to maximize the area near the side end surface of the first electrode.
  • all the edges of the second opening may be arranged outside the first opening.
  • the first electrode can be arranged up to the edge of the first opening without the adhesion auxiliary layer and the first electrode contacting each other. Therefore, it is possible to maximize the area near the side end surface of the first electrode.
  • all the edges of the second opening are inside the edge of the first opening, or It may be arranged on the periphery of one opening.
  • the adhesion auxiliary layer may include at least one of Ti and Cr.
  • the adhesiveness between the adhesion auxiliary layer and the insulating layer can be enhanced.
  • the semiconductor stacked body may include a p-type semiconductor layer arranged between the active layer and the first electrode.
  • the adhesion auxiliary layer containing Ti does not contact the first electrode, so that the operating voltage increases during energization. Can be suppressed.
  • the first electrode may not include Ti.
  • the first electrode may have higher electrical conductivity than the adhesion auxiliary layer.
  • the first electrode may be an ohmic electrode.
  • the first electrode may include at least one of Pd, Pt, Ni, and Al.
  • the adhesion auxiliary layer may not be in contact with the first electrode.
  • the semiconductor stacked body has a ridge portion, and in a plan view of the adhesion auxiliary layer, at least a part of an upper surface of the ridge portion has the first opening. It may be arranged inside the part.
  • the second electrode may be a pad electrode.
  • one aspect of the semiconductor laser device according to the present disclosure may further include a submount bonded to the second electrode.
  • the second electrode may be made of an alloy containing Au.
  • the semiconductor laminated body can be mounted better on the submount.
  • the submount includes an end face that intersects the first direction, and in a plan view of the adhesion auxiliary layer, the front end face and the first opening are formed.
  • the end surface may be arranged in between.
  • FIG. 1A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the first embodiment.
  • FIG. 1B is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser device according to the first embodiment.
  • FIG. 1C is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser device according to the first embodiment.
  • FIG. 1D is a schematic third cross-sectional view showing the overall configuration of the semiconductor laser device according to the first embodiment.
  • FIG. 1E is a schematic fourth cross-sectional view showing the overall configuration of the semiconductor laser device according to the first embodiment.
  • FIG. 1F is a schematic fifth cross-sectional view showing the overall configuration of the semiconductor laser device according to the first embodiment.
  • FIG. 2A is a schematic plan view showing the overall configuration of the semiconductor laser device of Comparative Example 1.
  • FIG. 2B is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device of Comparative Example 1.
  • FIG. 3A is a graph showing IV characteristics before and after the reliability test of the semiconductor laser device according to the first embodiment.
  • FIG. 3B is a graph showing IV characteristics of the semiconductor laser device of Comparative Example 2 before and after the reliability test.
  • FIG. 4A is a schematic cross-sectional view showing each step up to the step of forming the first electrode in the method for manufacturing the semiconductor laser device according to the first embodiment.
  • FIG. 4B is a schematic cross-sectional view showing each step after the step of forming the adhesion auxiliary layer in the method for manufacturing the semiconductor laser device according to the first embodiment.
  • FIG. 5A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the second embodiment.
  • FIG. 5B is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device according to the second embodiment.
  • FIG. 6A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the third embodiment.
  • FIG. 6B is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser device according to the third embodiment.
  • FIG. 6C is a schematic second sectional view showing the overall configuration of the semiconductor laser device according to the third embodiment.
  • FIG. 7A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the fourth embodiment.
  • FIG. 7B is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser device according to the fourth embodiment.
  • FIG. 7C is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser device according to the fourth embodiment.
  • FIG. 7D is a schematic third cross-sectional view showing the overall configuration of the semiconductor laser device according to the fourth embodiment.
  • FIG. 7E is a schematic fourth cross-sectional view showing the overall configuration of the semiconductor laser device according to the fourth embodiment.
  • FIG. 7F is a schematic fifth cross-sectional view showing the overall configuration of the semiconductor laser device according to the fourth embodiment.
  • FIG. 8A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the fifth embodiment.
  • FIG. 8B is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device according to the fifth embodiment.
  • FIG. 9A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the sixth embodiment.
  • FIG. 9B is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device according to the sixth embodiment.
  • FIG. 10A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the seventh embodiment.
  • FIG. 10B is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser device according to the seventh embodiment.
  • FIG. 10C is a schematic second cross-sectional view showing the overall configuration of the semiconductor laser device according to the seventh embodiment.
  • FIG. 11A is a schematic plan view showing the overall configuration of the semiconductor laser device according to the eighth embodiment.
  • FIG. 11B is a schematic first cross-sectional view showing the overall configuration of the semiconductor laser device according to the eighth embodiment.
  • FIG. 11C is a schematic second sectional view showing the overall configuration of the semiconductor laser device according to the eighth embodiment.
  • FIG. 12A is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device according to the ninth embodiment.
  • FIG. 12B is a schematic first partially enlarged cross-sectional view showing the configuration of the first electrode of the semiconductor laser device according to the ninth embodiment.
  • FIG. 12C is a schematic second partially enlarged cross-sectional view showing the configuration of the first electrode of the semiconductor laser device according to the ninth embodiment.
  • FIG. 13A is a schematic first partially enlarged cross-sectional view showing the configuration of the first electrode of the semiconductor laser device according to the tenth embodiment.
  • FIG. 13B is a schematic second partially enlarged cross-sectional view showing the configuration of the first electrode of the semiconductor laser device according to the tenth embodiment.
  • each figure is a schematic diagram and is not necessarily strictly illustrated. Therefore, the scales and the like do not necessarily match in each drawing.
  • the substantially same components are designated by the same reference numerals, and overlapping description will be omitted or simplified.
  • the terms “upper” and “lower” do not refer to an upward direction (vertical upward) and a downward direction (vertical downward) in absolute space recognition, but are based on a stacking order in a stacked structure. Is used as a term defined by a relative positional relationship with. Also, the terms “upper” and “lower” refer to not only two components being spaced apart from each other and another component being present between the two components, but also two components. It also applies when they are placed in contact with each other.
  • FIG. 1A is a schematic plan view showing the overall configuration of the semiconductor laser device 10 according to the present embodiment.
  • FIG. 1A in order to show the configuration of the adhesion auxiliary layer 22 and the like, a part of the second electrode 23 is cut out, and only the outline of the cut out part is shown by a broken line.
  • 1B to 1F are schematic cross-sectional views showing the overall configuration of the semiconductor laser device 10 according to the present embodiment. 1B to 1F show cross sections taken along the line IB-IB, the line IC-IC, the line ID-ID, the line IE-IE, and the line IF-IF shown in FIG. 1A, respectively.
  • the semiconductor laser device 10 is a device that emits laser light. As shown in FIG. 1B, the semiconductor laser device 10 includes a semiconductor laminated body 30, an insulating layer 21, a first electrode 25, a second electrode 23, an adhesion auxiliary layer 22, and an n-side electrode 28. ..
  • the semiconductor laminated body 30 has a front end face 36 that is a laser light emitting end face and a rear end face 37 that is a face opposite to the front end face 36.
  • the semiconductor stacked body 30 also includes an active layer 33 that generates laser light, as shown in FIG. 1B and the like.
  • the semiconductor stacked body 30 has a ridge portion 35 as shown in FIG. 1B.
  • the semiconductor stacked body 30 further includes a substrate 31, an n-type semiconductor layer 32, and a p-type semiconductor layer 34. Other layers may be inserted between the above-mentioned layers of the semiconductor laminated body 30.
  • Table 1 shown below shows an example of a concrete configuration of main layers constituting the semiconductor laser device 10.
  • the specific configuration of each layer is merely an example, and the material, film thickness, impurity concentration, number of layers, and the like can be changed as appropriate.
  • the substrate 31 is a member that serves as a base of the semiconductor laser device 10.
  • the substrate 31 contains n-type GaN.
  • the plate thickness of the substrate 31 is, for example, 50 ⁇ m or more and 150 ⁇ m or less.
  • Group IV n-type impurities are added to the substrate 31.
  • the group IV n-type impurity is, for example, Si.
  • the group IV n-type impurity contained in the substrate 31 may be Ge or the like.
  • the impurity concentration (specifically, Si concentration) of the substrate 31 is, for example, 1.40 ⁇ 10 18 cm ⁇ 3 .
  • the n-type semiconductor layer 32 is an example of a first conductivity type semiconductor layer arranged above the substrate 31.
  • the n-type semiconductor layer 32 includes, for example, an n-type cladding layer (not shown) made of n-type AlGaN and an n-side guide layer (not shown) made of n-type GaN.
  • the n-type clad layer is provided in contact with each of the substrate 31 and the n-side guide layer.
  • the n-type cladding layer is, for example, as shown in Table 1, an AlGaN layer having a film thickness of 3 ⁇ m.
  • the composition ratio of Al is 2.6%, for example.
  • Si which is an example of a group IV n-type impurity, is added to the n-type cladding layer.
  • the impurity concentration of the n-type clad layer is lower than the impurity concentration of the substrate 31, and is, for example, 5.00 ⁇ 10 17 cm ⁇ 3 .
  • the n-side guide layer is provided in contact with each of the n-type cladding layer and the active layer 33.
  • the n-side guide layer is, for example, as shown in Table 1, a GaN layer having a film thickness of 127 nm.
  • Si which is an example of a group IV n-type impurity, is added to the n-side guide layer.
  • the impurity concentration of the n-side guide layer is equal to the impurity concentration of the n-type cladding layer and lower than the impurity concentration of the substrate 31, for example, 5.00 ⁇ 10 17 cm ⁇ 3 .
  • the active layer 33 is disposed above the n-type semiconductor layer 32 and is a light emitting layer that generates laser light.
  • the active layer 33 has a multiple quantum well structure.
  • the active layer 33 has a plurality of well layers and a plurality of barrier layers that are alternately stacked one by one. More specifically, as shown in Table 1, the active layer 33 has two well layers and three barrier layers.
  • Each of the two well layers is an undoped InGaN layer having a thickness of 7.5 nm.
  • the composition ratio of In in the well layer is adjusted so that the oscillation wavelength is 405 nm.
  • Each of the three barrier layers is an undoped In 0.08 Ga 0.92 N layer, and as shown in Table 1, the film thicknesses thereof are different from each other.
  • the p-type semiconductor layer 34 is an example of a second conductivity type semiconductor layer having a conductivity type different from the first conductivity type disposed between the active layer 33 and the first electrode 25.
  • the p-type semiconductor layer 34 is doped with Mg and contains H.
  • the p-type semiconductor layer 34 includes a p-side guide layer, an electron block layer, a p-type clad layer, and a p-type contact layer (none of these layers is shown).
  • the p-side guide layer is provided in contact with each of the active layer 33 and the electron block layer.
  • the p-side guide layer has a laminated structure of an undoped InGaN layer having a film thickness of 40 nm, an undoped GaN layer having a film thickness of 6 nm, and a p-type GaN layer having a film thickness of 3 nm.
  • the In composition ratio of the undoped InGaN layer is, for example, 0.3%.
  • the p-type GaN layer is an example of a p-type nitride semiconductor layer, and Mg is added as a p-type impurity.
  • the impurity concentration of the p-type GaN layer is higher than the impurity concentration of the substrate 31, and is, for example, 1.50 ⁇ 10 19 cm ⁇ 3 .
  • the electron block layer blocks electrons moving from the active layer 33 to the first electrode 25.
  • the electron block layer is provided in contact with each of the p-side guide layer and the p-type cladding layer.
  • the electron block layer has, for example, as shown in Table 1, a laminated structure of a plurality of p-type AlGaN layers.
  • the plurality of p-type AlGaN layers have different film thicknesses and Al composition ratios.
  • the p-type AlGaN layer (lower layer side) in contact with the p-side guide layer has a film thickness of 5 nm, and the Al composition ratio is 4% to 36% along the direction from the p-side guide layer to the p-type clad layer. It is gradually increasing.
  • the p-type AlGaN layer (upper layer side) in contact with the p-type clad layer has a film thickness of 1 nm and an Al composition ratio of 36%.
  • Mg is added as a p-type impurity to the two p-type AlGaN layers.
  • the impurity concentration of the p-type AlGaN layer is equivalent to the impurity concentration of the p-type GaN layer of the p-side guide layer, and is 1.50 ⁇ 10 19 cm ⁇ 3 , for example.
  • the p-type cladding layer is provided in contact with each of the electron block layer and the p-type contact layer.
  • the p-type clad layer has, for example, as shown in Table 1, a laminated structure of a plurality of p-type AlGaN layers.
  • the p-type AlGaN layers have different film thicknesses and different impurity concentrations.
  • the Al composition ratios of the p-type AlGaN layers are equal to each other, for example, 2.6%.
  • Mg is added as a p-type impurity to the plurality of p-type AlGaN layers.
  • the impurity concentration of the p-type AlGaN layer (lower layer side) in contact with the electron block layer is, for example, 2.00 ⁇ 10 18 cm ⁇ 3 .
  • the impurity concentration of the p-type AlGaN layer (upper layer side) in contact with the p-type contact layer is higher than the impurity concentration of the p-type AlGaN layer in contact with the electron block layer and lower than the impurity concentration of the electron block layer, for example, 1.00 ⁇ It is 10 19 cm -3 .
  • the p-type contact layer is provided between and in contact with the p-type clad layer and the first electrode 25.
  • the p-type contact layer has, for example, as shown in Table 1, a laminated structure of a plurality of p-type GaN layers.
  • the p-type GaN layers have different film thicknesses and different impurity concentrations.
  • Mg is added to the plurality of p-type GaN layers as p-type impurities.
  • the impurity concentration of the p-type GaN layer (lower layer side) in contact with the p-type cladding layer is higher than the impurity concentration of the p-type cladding layer, and is 2.00 ⁇ 10 19 cm ⁇ 3 , for example.
  • the impurity concentration of the p-type GaN layer (upper layer side) in contact with the first electrode 25 is higher than the impurity concentration of the p-type GaN layer in contact with the p-type cladding layer, and is, for example, 2.00 ⁇ 10 20 cm ⁇ 3 . That is, the p-type GaN layer in contact with the first electrode 25 is in a state in which p-type impurities are highly doped.
  • the ridge portion 35 is formed on a part of the p-type semiconductor layer 34. Further, as shown in FIG. 1B, in the p-type semiconductor layer 34, protrusions 35w having the same height as the ridge portion 35 are formed along the ridge portion 35 on both sides of the ridge portion 35. In other words, the p-type semiconductor layer 34 is provided with a groove 35t that partitions the ridge 35 and the protrusion 35w.
  • the ridge portion 35 functions as a current confinement structure (that is, a current confinement structure) and also as a waveguide of laser light.
  • the protrusion 35w is formed in the present embodiment, the protrusion 35w may not be formed. That is, only the ridge portion 35 of the upper surface of the p-type semiconductor layer 34 may project upward.
  • the height of the ridge portion 35 is, for example, 680 nm.
  • the insulating layer 21 is formed in the entire region of the upper surface of the semiconductor stacked body 30 and is formed so as to extend along the first direction from the front end face 36 to the rear end face 37.
  • 27 is a dielectric layer disposed above the semiconductor laminated body 30. That is, as shown in FIGS. 1D to 1F, the insulating layer 21 is located between at least one of the front end face 36 and the rear end face 37 and the first opening 27, and the ridge portion of the semiconductor stacked body 30. It is arranged above 35.
  • the insulating layer 21 is disposed between the side end surface 38 of the semiconductor stacked body 30 and the first opening 27 and above the semiconductor stacked body 30 (above the groove 35t and the protruding portion 35w).
  • the adhesion auxiliary layer 22 at least a part of the upper surface of the ridge portion 35 is arranged inside the first opening 27.
  • the insulating layer 21 is made of SiO 2 .
  • the material forming the insulating layer 21 is not limited to SiO 2 .
  • the insulating layer 21 may be made of SOG (Spin on Glass) material, PSG (Phosphorus Silicon Glass), BPSG (Boron Phosphorus Silicon Glass) or the like, or may be TiO 2 , Ta 2 O 5 , Al 2 O 3 , ZrO 2 or the like. , HfO 2 , CeO 2 , In 2 O 3 , Nd 2 O 5 and other non-Si-based oxides, SiN, Si 3 N 4 and other nitrides, polyimide, etc. It may be an organic material. Note that when the insulating layer 21 is formed of SiN, the same characteristics as when using SiO 2 can be obtained.
  • the first electrode 25 is an electrode arranged above the semiconductor laminated body 30.
  • the first electrode 25 is arranged on the upper surface of the ridge portion 35.
  • the first electrode 25 is arranged on the upper surface of the ridge portion 35 in a region excluding the front end face 36, the rear end face 37, and the vicinity thereof. Further, the first electrode 25 is arranged inside the first opening 27 in a plan view of the insulating layer 21.
  • the first electrode 25 includes a region between the front end face 36 and a position 35 ⁇ m away from the front end face 36 toward the center of the upper surface of the semiconductor stacked body 30.
  • the end edge of the first opening 27 of the insulating layer 21 is arranged outside the outer peripheral edge of the first electrode 25 arranged on the ridge portion 35 with a distance of 0.1 ⁇ m or more and less than 10 ⁇ m.
  • the first electrode 25 is an ohmic electrode that makes ohmic contact with the p-type semiconductor layer 34. Further, the first electrode 25 has higher electric conductivity than the adhesion auxiliary layer 22. Thereby, the resistance value of the semiconductor laser device 10 can be reduced as compared with the case where the electric conductivity of the first electrode 25 is equal to or lower than the electric conductivity of the adhesion auxiliary layer 22.
  • the first electrode 25 does not contain Ti. This can suppress an increase in operating voltage when the semiconductor laser device 10 is energized.
  • the first electrode 25 includes, for example, at least one of Pd, Pt, Ni and Al.
  • the first electrode 25 is provided in contact with the p-type contact layer.
  • the first electrode 25 has, for example, as shown in Table 1, a laminated structure of a Pd film having a film thickness of 40 nm and a Pt film having a film thickness of 35 nm.
  • the Pd film is located on the lower layer side and is in contact with the p-type contact layer.
  • the second electrode 23 is an electrode arranged above the first electrode 25 and the insulating layer 21.
  • the outer peripheral edge of the second electrode 23 is disposed between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 27 and above the insulating layer 21.
  • the second electrode 23 is arranged so as not to contact at least one of the front end face 36 and the rear end face 37.
  • the second electrode 23 is arranged so as not to contact both the end faces of the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the second electrode 23 is arranged at a distance of, for example, 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 36 and the rear end face 37.
  • the second electrode 23 is arranged with a distance of 10 ⁇ m from the front end face 36 and with a distance of 10 ⁇ m from the rear end face 37.
  • the outer peripheral edge of the second electrode 23 is arranged at a distance of 7.6 ⁇ m from the side end surface 38 of the semiconductor stacked body 30.
  • the second electrode 23 is a pad electrode. Thereby, a wire for power supply can be easily bonded to the second electrode 23.
  • the second electrode 23 contacts the first electrode 25.
  • the second electrode 23 has higher electric conductivity than the adhesion auxiliary layer 22.
  • the second electrode 23 does not contain Ti.
  • the second electrode 23 is, for example, as shown in Table 1, made of Au having a film thickness of 1.6 ⁇ m.
  • the adhesion auxiliary layer 22 is a layer arranged between the second electrode 23 and the insulating layer 21.
  • the adhesion auxiliary layer 22 has a second opening 26 at least partially overlapping the first opening 27 in a plan view of the adhesion auxiliary layer 22.
  • the long side edge of the first opening 27 is arranged inside the second opening 26 when the adhesion aiding layer 22 is viewed in a plan view, and the short side edge of the first opening 27 is arranged.
  • the edge coincides with the edge of the second opening 26.
  • at least a part of the first electrode 25 is arranged inside the first opening 27 and the second opening 26 in a plan view of the adhesion auxiliary layer 22.
  • the second electrode 23 can contact the first electrode 25 arranged inside the first opening 27 and the second opening 26.
  • the entire first electrode 25 is arranged inside the first opening 27 and the second opening 26 in the plan view of the adhesion auxiliary layer 22.
  • the adhesion aiding layer 22 is between the at least one of the front end face 36 and the rear end face 37 and the first opening 27, and the insulating layer above the ridge portion 35. It is arranged above 21.
  • the adhesion auxiliary layer 22 is disposed between the side end surface 38 of the semiconductor stacked body 30 and the first opening 27 and above the insulating layer 21 above the groove 35t and the protrusion 35w. As shown in FIG.
  • the adhesion aiding layer 22 is arranged so as not to contact both the end faces of the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the adhesion aiding layer 22 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from at least one of the front end face 36 and the rear end face 37.
  • the edge of the second opening 26 is arranged outside the edge of the first opening 27 in the first direction with a distance of, for example, 0.1 ⁇ m or more and less than 10 ⁇ m.
  • the edge of the second opening 26 is arranged 2.8 ⁇ m apart from the edge of the first opening 27 in the first direction.
  • the edge of the second opening 26 is arranged in the groove 35t at a distance of 2.8 ⁇ m from the edge of the first opening 27 in the second direction.
  • the edge of the second opening 26 may coincide with the edge of the first opening 27 in the second direction.
  • the outer peripheral edge of the adhesion auxiliary layer 22 is arranged 9 ⁇ m away from the front end face 36 and 9 ⁇ m apart from the rear end face 37 in the first direction.
  • the outer peripheral edge of the adhesion auxiliary layer 22 is arranged at a distance of 6.6 ⁇ m from the side end surface 38 of the semiconductor stacked body 30 in the second direction.
  • the adhesion auxiliary layer 22 contains at least one of Ti and Cr.
  • the adhesion auxiliary layer 22 contains Ti and the insulating layer 21 is made of TiO 2 , the adhesion between the adhesion auxiliary layer 22 and the insulating layer 21 can be further enhanced. This is because when the insulating layer 21 is an oxide, the adhesion auxiliary layer 22 made of a metal film is also strongly bonded if it is a material that easily forms an oxide.
  • the outer peripheral edge of the second electrode 23 is arranged inside the outer peripheral edge of the adhesion auxiliary layer 22 and outside the second opening 26.
  • the outer peripheral edge of the adhesion aiding layer 22 is located 9 ⁇ m from the front end face 36 and the rear end face 37
  • the second electrode 23 is located 10 ⁇ m from the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the adhesion aiding layer 22 is located at a position of 6.6 ⁇ m
  • the outer peripheral edge of the second electrode 23 is located at a position of 7.6 ⁇ m from the side end surface 38
  • the second opening portion 26 of the second opening 26 is located at a position of 69 ⁇ m from the side end surface 38.
  • the adhesion auxiliary layer 22 has, for example, a laminated structure of a Ti film having a film thickness of 10 nm and a Pt film having a film thickness of 50 nm.
  • the Ti film is located on the lower layer side and is in contact with the insulating layer 21.
  • the n-side electrode 28 is an example of an n-side electrode in contact with the substrate 31.
  • the n-side electrode 28 is arranged on the back surface of the substrate 31 (that is, the surface on the back side of the surface of the substrate 31 on which the n-type semiconductor layer 32 and the like are formed).
  • the n-side electrode 28 is formed using a metal material.
  • the n-side electrode 28 is at least selected from the group consisting of Ti, Al, Pt, Au, Mo, Sn, In, Ni, Cr, Nb, Ba, Ag, Rh, Ir, Ru and Hf. It contains one kind of metal or at least two kinds of alloys selected from the group.
  • the n-side electrode 28 has a laminated structure of an Au film having a film thickness of 300 nm, a Pt film having a film thickness of 35 nm, and a Ti film having a film thickness of 10 nm.
  • the Ti film is located on the substrate 31 side.
  • the semiconductor laser device 10 having the above configuration emits laser light (blue-violet) having an oscillation wavelength of 405 nm, for example.
  • the chip width of the semiconductor laser device 10 is 150 ⁇ m, the cavity length is 800 ⁇ m, and the ridge width (stripe width) is 7 ⁇ m on the front end face 36 side and 6 ⁇ m on the rear end face 37 side.
  • the optical output of the semiconductor laser device 10 is 0.7 W in continuous oscillation.
  • the maximum operating current of the semiconductor laser device 10 is 0.47A. At this time, the current density of the first electrode 25 is 1.1 kAcm ⁇ 2 , and the current density of the n-side electrode 28 is 0.47 kAcm ⁇ 2 .
  • the electrode area of the n-side electrode 28 is 1.0 ⁇ 10 ⁇ 3 cm 2 .
  • the operating voltage of the semiconductor laser device 10 is 4.7 V, and the maximum junction temperature during operation is 91°C. Note that these numerical values are merely examples, and the respective values may be appropriately designed and changed.
  • the active layer 33 may have a single quantum well structure as shown in Table 2.
  • the semiconductor laser device 10 according to the modified example shown in Table 2 is different from the structure shown in Table 1 in that the layer structure of the active layer 33, the InGaN layer on the lower side of the p-side guide layer, and the first electrode 25.
  • the Pt film and the second electrode 23 have different film thicknesses.
  • the Pt film of the adhesion auxiliary layer 22 also has a different film thickness. Specifically, the film thickness of the Pt film of the adhesion auxiliary layer 22 is larger than that shown in Table 1, and is 100 nm, for example.
  • the active layer 33 has one well layer and two barrier layers.
  • the well layer is an undoped InGaN layer having a film thickness of 7.5 nm.
  • the composition ratio of In in the well layer is adjusted so that the oscillation wavelength is 405 nm, for example.
  • Each of the two barrier layers is an undoped In 0.08 Ga 0.92 N layer, and as shown in Table 1, their film thicknesses are different from each other.
  • the InGaN layer (lower layer side) in contact with the n-side guide layer has a film thickness of 190 nm. Further, the film thickness of the InGaN layer of the p-side guide layer is 60 nm, which is larger than that shown in Table 1. As a result, the effect of confining light in the well layer in the stacking direction can be enhanced, and the waveguide loss can be reduced to 2.9 cm ⁇ 1 .
  • the semiconductor laser device 10 according to the present modification emits laser light having an oscillation wavelength of 405 nm, for example.
  • the semiconductor laser device 10 according to the present modification has a chip width of 150 ⁇ m, a cavity length of 1200 ⁇ m, and a ridge width of 30 ⁇ m on the front end face 36 side and 28 ⁇ m on the rear end face 37 side.
  • the optical output of the semiconductor laser device 10 according to the present modification is 3.5 W in continuous oscillation.
  • the maximum operating current of the semiconductor laser device 10 according to the present modification is 2.4A.
  • the current density of the first electrode 25 at this time is 6.2 kAcm ⁇ 2
  • the current density of the n-side electrode 28 is 1.8 kAcm ⁇ 2 .
  • the electrode area of the n-side electrode 28 is 1.3 ⁇ 10 ⁇ 3 cm 2 .
  • the operating voltage of the semiconductor laser device 10 according to the present modification is 4.9 V, and the maximum junction temperature during operation is 140° C. or higher and 150° C. or lower. Note that these numerical values are merely examples, and the respective values may be appropriately designed and changed.
  • the ridge width of 28 ⁇ m or more can reduce the light density of the laser, and can suppress the end face destruction of the semiconductor laser device 10 due to the light absorption of the laser itself. Further, when the resonator length is 1200 ⁇ m or more, the heat dissipation of the semiconductor laser device 10 can be improved. Since the active layer 33 has the single quantum well structure, it is possible to suppress an increase in the oscillation current threshold value and a decrease in the slope efficiency in the current-optical output characteristic due to the increase in the cavity length. As described above, in the semiconductor laser device 10 according to the present modification, it is possible to reduce the oscillation current threshold value and the operating current.
  • the oscillation wavelength of the semiconductor laser device 10 is not limited to 405 nm.
  • the semiconductor laser device 10 may emit laser light (blue) having an oscillation wavelength of 445 nm.
  • the blue-light semiconductor laser device 10 can be realized with the same configuration as the semiconductor laser device 10 according to the modification shown in Table 2. Specifically, by adjusting the In composition ratio of the well layer of the active layer 33, a laser element that outputs a blue laser is realized.
  • FIG. 2A and 2B are a schematic plan view and a cross-sectional view, respectively, showing the overall configuration of the semiconductor laser device 1010 of Comparative Example 1.
  • FIG. 2A in order to show the configuration of the semiconductor laser device 1010, a part of the second electrode 1023 and the adhesion auxiliary layer 1022 are cut away.
  • a semiconductor laser device 1010 of Comparative Example 1 shown in FIGS. 2A and 2B is a device that emits laser light and has a front end face 1036 and a rear end face 1037. Similar to the semiconductor laser device 10 according to the present embodiment, the semiconductor laminated body 1030, the insulating layer 1021, the first electrode 1025, the second electrode 1023, the adhesion auxiliary layer 1022, and the n-side electrode 1028 are provided.
  • the semiconductor stacked body 1030 includes a substrate 1031, an n-type semiconductor layer 1032, an active layer 1033, and a p-type semiconductor layer 1034. A ridge portion 1035 is formed in the p-type semiconductor layer 1034.
  • the semiconductor laser device 1010 of Comparative Example 1 is different from the semiconductor laser device 10 according to the present embodiment mainly in the configurations of the insulating layer 1021, the first electrode 1025, the second electrode 1023, and the adhesion auxiliary layer 1022.
  • the insulating layer 1021 has a first opening 1027 similar to the first opening 27 according to the first embodiment, but the first opening 1027 includes the front end surface 1036 to the rear end surface 1037. It differs from the first opening 27 according to the first embodiment in that it extends up to.
  • the first electrode 1025 also extends from the front end face 1036 to the rear end face 1037.
  • the adhesion auxiliary layer 1022 has a second opening 1026 similar to the second opening 26 according to the first embodiment, but the second opening 1026 also extends from the front end surface 1036 to the rear end surface 1037.
  • the second opening 26 is different from
  • the second electrode 1023 is arranged on the entire upper surface of the semiconductor laser device 1010 including the vicinity of the front end face 1036 and the vicinity of the rear end face 1037.
  • the cross section perpendicular to the first direction from the front end face 1036 to the rear end face 1037 is at any position from the front end face 1036 to the rear end face 1037. It is similar to the cross section shown in FIG. 2B.
  • the second electrode 1023 is arranged in the vicinity of the ridge portion 1035 of the front end face 1036 and the rear end face 1037, but the adhesion auxiliary layer 1022 is not arranged. .. Therefore, in the semiconductor laser device 1010 of Comparative Example 1, the adhesion of the second electrode 1023 in the vicinity of the ridge portion 1035 is lower than in other regions, and the second electrode 1023 is likely to peel off.
  • the second electrode 23 and the adhesion auxiliary layer 22 are provided on both the front end face 36 and the rear end face 37. It is arranged between the end face and the first opening 27 and above the insulating layer 21. Further, as shown in FIG. 1C, the second electrode 23 is formed in contact with the upper surface of the ridge portion 35 of the p-type semiconductor layer 34 in the first opening 27 in which the first electrode 25 is not formed.
  • the second electrode 23 and the adhesion aiding layer 22 are disposed between both the front end face 36 and the rear end face 37 and the first opening 27 and above the insulating layer 21, so that the front end The adhesion (that is, the adhesive force) between the second electrode 23 and the insulating layer 21 on the surface 36 and the rear end surface 37 can be enhanced. Therefore, peeling of the second electrode 23 on the front end face 36 and the rear end face 37 can be suppressed.
  • the second electrode 23 and the adhesion aiding layer 22 are located between the end faces of both the front end face 36 and the rear end face 37 and the first opening 27, and above the insulating layer 21.
  • the configurations of the second electrode 23 and the adhesion auxiliary layer 22 are not limited to this.
  • the second electrode 23 and the adhesion auxiliary layer 22 may be disposed between the at least one of the front end face 36 and the rear end face 37 and the first opening 27 and above the insulating layer 21.
  • the second electrode 1023 of Comparative Example 1 is also arranged near the front end face 1036 and the rear end face 1037.
  • the ends of the second electrode 1023 coincide with the front end face 1036 and the rear end face 1037.
  • the front end face 1036 and the rear end face 1037 are generally formed by cleavage. Therefore, when the second electrode 1023 is arranged near the front end face 1036 and the rear end face 1037, peeling of the second electrode 1023 is likely to occur during the cleavage.
  • the second electrode 23 according to the present embodiment is arranged so as not to contact at least one of the front end face 36 and the rear end face 37. Thereby, peeling of the second electrode 23 on at least one end face can be suppressed.
  • the outer peripheral edge of the second electrode 23 is arranged inside the outer peripheral edge of the adhesion auxiliary layer 22 in a plan view of the adhesion auxiliary layer 22, and The outer peripheral edge of the two electrode 23 is arranged outside the edge of the first opening 27 and the edge of the second opening 26.
  • the adhesion auxiliary layer 22 is arranged between the outer peripheral edge of the second electrode 23 and the insulating layer 21, so that peeling of the outer peripheral edge of the second electrode 23 can be suppressed.
  • the adhesion auxiliary layer 22 does not contact the first electrode 25. The effect produced by this configuration will be described with reference to FIGS. 3A and 3B.
  • 3A and 3B are graphs showing IV characteristics of the semiconductor laser device 10 according to the present embodiment and the semiconductor laser device of Comparative Example 2 before and after the reliability test, respectively.
  • 3A and 3B also show graphs showing the differential coefficients of the curves showing the IV characteristics.
  • the horizontal axis represents the forward voltage (FWD Volt.)
  • the left vertical axis represents the forward current (FWD Curr.)
  • the right vertical axis represents the differential coefficient of the forward current depending on the voltage.
  • the dotted and solid lines show the IV characteristics before and after the reliability test, respectively
  • the alternate long and short dash line and the broken line show the forward current voltage before and after the reliability test, respectively. Indicates the differential coefficient.
  • the semiconductor laser device of Comparative Example 2 is different from the semiconductor laser device 10 according to the present embodiment in that the adhesion auxiliary layer does not have the second opening, and is the same in other points. As described above, in the semiconductor laser device of Comparative Example 2, since the adhesion auxiliary layer is also arranged on the first electrode, the first electrode is in contact with the adhesion auxiliary layer on the entire upper surface.
  • the differential coefficient of the IV characteristic corresponds to the electrical conductivity (reciprocal of the resistance value) of the semiconductor laser device.
  • the differential coefficient is lower after the reliability test than before the reliability test. That is, the resistance value of the semiconductor laser device is higher after the reliability test than before the reliability test. It is presumed that this is due to the action of the adhesion auxiliary layer as described below.
  • the adhesion auxiliary layer is in contact with the insulating layer.
  • the insulating layer made of SiO 2 or the like contains a large amount of H atoms, and the adhesion auxiliary layer made of Ti or the like has a function of storing H atoms in the insulating layer. Therefore, H atoms are supplied to the first electrode via the adhesion auxiliary layer. H atoms that have reached the first electrode by using a potential difference or heat during operation of the semiconductor laser device as a driving source are combined with Mg doped in the p-type nitride-based semiconductor layer to form a p-type nitride-based semiconductor layer. Inactivate the carrier. Therefore, in the semiconductor laser device of Comparative Example 1, it is estimated that the resistance value increased after the reliability test. From the above, it is considered that, as in the semiconductor laser device 10 according to the present embodiment, by preventing the adhesion auxiliary layer 22 from contacting the first electrode 25, it is possible to suppress an increase in operating voltage during energization.
  • the end edge of the second opening 26 on the side end face side is arranged between the two. This allows the first electrode 25 to be arranged up to the edge of the first opening 27 that is closest to the side end face without contact between the adhesion auxiliary layer 22 and the first electrode 25. Therefore, it is possible to suppress an increase in the resistance value of the semiconductor laser device 10 and maximize the area of the first electrode 25 near the side end surface.
  • a part of the edge of the second opening 26 is arranged on the edge of the first opening 27.
  • the edge of the first opening 27 that is closest to one of the front end face 36 and the rear end face 37.
  • the end edge of the second opening 26 closest to the one end face is arranged.
  • FIG. 4A is a schematic cross-sectional view showing each step up to the step of forming first electrode 25 in the method for manufacturing semiconductor laser device 10 according to the present embodiment.
  • FIG. 4B is a schematic cross-sectional view showing each step after the step of forming adhesion auxiliary layer 22 in the method for manufacturing semiconductor laser device 10 according to the present embodiment. 4A and 4B, a cross section at the same position as in FIG. 1B is shown.
  • the semiconductor laminated body 30 is formed, and the oxide film 41 used as a mask is deposited on the semiconductor laminated body 30.
  • the semiconductor layers forming the semiconductor stacked body 30 are formed by using, for example, an MOCVD (Metal Organic Chemical Vapor Deposition) method or an MBE (Molecular Beam Epitaxy) method.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • MBE Molecular Beam Epitaxy
  • the oxide film 41 is formed on the p-type semiconductor layer 34 which is the uppermost layer of the semiconductor laminated body 30.
  • the oxide film 41 is, for example, an insulating film such as a silicon oxide film, and is formed by an AP-CVD (Atmospheric Pressure Chemical Vapor Deposition) method or the like. By providing the oxide film 41, the surface of the p-type semiconductor layer 34 can be protected in the step of forming the ridge portion 35 described later. After forming the oxide film 41, annealing is performed at about 800° C. for about 60 minutes.
  • the oxide film 41 is patterned. Specifically, a photosensitive resist is applied to the oxide film 41, and photolithography and etching are performed to remove the removal target portion. After patterning the oxide film 41 in this manner, the photosensitive resist is removed.
  • the ridge portion 35 and the protruding portion 35w are formed. Specifically, using the patterned oxide film 41 as a mask, the region of the p-type semiconductor layer 34 between the region to be the ridge portion 35 and the region to be the protruding portion 35w is etched.
  • the p-type semiconductor layer 34 is etched by dry etching, but may be wet etching.
  • the gas introduced into the chamber during dry etching is, for example, a chlorine-based gas containing BCl 3 and Cl 2 .
  • the insulating layer 21 is formed. Specifically, after removing the oxide film 41 by etching, the insulating layer 21 made of SiO 2 is formed on the p-type semiconductor layer 34 by plasma CVD.
  • a photosensitive resist 42 is applied on the insulating layer 21 and photolithography is performed to perform patterning.
  • the photosensitive resist 42 arranged above the ridge portion 35 is removed.
  • the region of the insulating layer 21 on the ridge portion 35 which is not covered with the photosensitive resist 42 is removed by etching.
  • the etching of the insulating layer 21 is dry etching, but may be wet etching. Also, both etching methods may be combined. In the dry etching when the insulating layer 21 is made of SiO 2 as in this embodiment, for example, a gas containing CF 4 is used as an introduction gas.
  • the first electrode 25 is formed on the entire upper surface of the semiconductor laminated body 30. That is, the first electrode 25 is formed on the upper surface of the ridge portion 35 of the semiconductor stacked body 30 and the upper surface of the photosensitive resist 42.
  • the photosensitive resist 42 and the first electrode 25 formed on the upper surface thereof are removed by lift-off.
  • etc. heating is performed by arranging the laminated body including the semiconductor laminated body 30 formed in the above steps, the insulating layer 21, and the first electrode 25 on a hot plate or the like preheated to a predetermined processing temperature.
  • a predetermined processing temperature For example, the atmosphere during the heat treatment is air, the temperature is about 200° C., and the treatment time is about 40 minutes.
  • the contact resistivity of the first electrode 25 according to the present embodiment can be reduced to less than 2.5 ⁇ 10 ⁇ 4 ⁇ cm 2 .
  • the heat treatment step is not limited to this.
  • the stacked body including the semiconductor stacked body 30, the insulating layer 21, and the first electrode 25 may be heated in an RTA (Rapid Thermal Anneal) furnace. Specifically, after the laminated body is carried into the RTA furnace, it is heated to about 350° C. in an oxygen atmosphere with a predetermined temperature gradient and maintained for about 10 minutes. Then, the laminate is cooled in a furnace and then taken out.
  • the contact resistivity of the first electrode 25 according to the present embodiment can be reduced to less than 2.2 ⁇ 10 ⁇ 4 ⁇ cm 2 .
  • a photosensitive resist 43 is applied over the entire semiconductor stacked body 30, and patterning is performed by performing photolithography.
  • the photosensitive resist 43 in the regions other than above the ridge portion 35, the protruding portion 35w, and the positions corresponding to the front end face 36 and the rear end face 37 is removed.
  • the adhesion auxiliary layer 22 is formed over the entire semiconductor stacked body 30. That is, the adhesion auxiliary layer 22 is formed on the photosensitive resist 43 and the insulating layer 21.
  • the adhesion auxiliary layer 22 a Ti layer and a Pt layer are formed in order from the lower layer.
  • the photosensitive resist 43 and the adhesion auxiliary layer 22 formed on the upper surface thereof are removed by lift-off.
  • a photosensitive resist 44 is applied over the entire semiconductor stacked body 30, and photolithography is performed to perform patterning.
  • the photosensitive resist 44 in an area other than above the protruding portions 35w and the positions corresponding to the front end face 36 and the rear end face 37 is removed.
  • the second electrode 23 is formed over the entire semiconductor stacked body 30. That is, the second electrode 23 is formed on the photosensitive resist 44, the insulating layer 21, the adhesion auxiliary layer 22, and the first electrode 25. In this embodiment, an Au layer is formed as the second electrode 23. At this time, the second electrode 23 is formed such that the gap length between the second electrodes 23 adjacent to each other in the cavity direction corresponding to the longitudinal direction of the ridge portion 35 formed by photolithography is 0.2 ⁇ m or more and less than 40 ⁇ m. However, it may be cleaved at the center of the gap and the cleaved surface may be the front end face 36 or the rear end face 37.
  • the second electrode 23 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 36 or the rear end face 37.
  • the direction of the resonator does not match the direction of the crystal plane, the distance from the second electrode 23 to the front end face 36 or the rear end face 37 in one of the chips at both ends of the bar-shaped element formed by cleavage. Therefore, a margin may be given to the length of the gap between the second electrodes 23 adjacent to each other in the resonator direction.
  • the length of the gap may be 20 ⁇ m or more and less than 40 ⁇ m, that is, the second electrode 23 may be arranged at a distance of 10 ⁇ m or more and less than 20 ⁇ m from the front end face 36 or the rear end face 37. Good.
  • the photosensitive resist 44 and the second electrode 23 formed on the upper surface thereof are removed by lift-off.
  • the same heat treatment as that performed after the step of forming the first electrode 25 may be performed. Thereby, the contact resistivity of the first electrode 25 can be reduced.
  • the back surface of the substrate 31 included in the semiconductor laminate 30 (the surface on the back side of the surface on which the first electrode 25 and the like are arranged) is polished.
  • the substrate 31 having a thickness of about 400 ⁇ m is polished until the thickness becomes about 85 ⁇ m. Polishing is performed by, for example, CMP (Chemical Mechanical Polishing). Thereby, the resistance of the substrate 31 can be reduced and the semiconductor laser device 10 can be downsized.
  • CMP Chemical Mechanical Polishing
  • the n-side electrode 28 is formed on the back surface of the substrate 31 included in the semiconductor stacked body 30.
  • the n-side electrode 28 is formed, for example, by forming a Ti film, a Pt film, and an Au film in this order by a vapor deposition method or a sputtering method and patterning them.
  • the patterning is performed by, for example, photolithography and/or etching.
  • the semiconductor laser device 10 shown in FIGS. 1A to 1F is manufactured through the above steps.
  • the semiconductor laser device according to the second embodiment will be described.
  • the semiconductor laser device according to the present embodiment is different from the semiconductor laser device 10 according to the first embodiment mainly in the configuration for current constriction.
  • the semiconductor laser device according to the present embodiment will be described with reference to FIGS. 5A and 5B, focusing on the differences from the semiconductor laser device 10 according to the first embodiment.
  • FIG. 5A is a schematic plan view showing the overall configuration of the semiconductor laser device 110 according to the present embodiment.
  • FIG. 5A in order to show the configuration of the adhesion auxiliary layer 122 and the like, a part of the second electrode 123 is cut out, and only the outline of the cut out part is shown by a broken line.
  • FIG. 5B is a schematic sectional view showing the overall configuration of the semiconductor laser device 110 according to the present embodiment. 5B shows a cross section taken along line VB-VB shown in FIG. 5A.
  • the semiconductor laser device 110 includes a semiconductor laminated body 130, an insulating layer 121, a first electrode 125, a second electrode 123, an adhesion auxiliary layer 122, and n. And a side electrode 28.
  • the semiconductor laminated body 130 has a front end face 136 that is an emission end face of laser light and a rear end face 137 that is a face opposite to the front end face 136. Further, the semiconductor stacked body 130 includes an active layer 33 that generates laser light, as shown in FIG. 5B.
  • the semiconductor stacked body 130 further includes a substrate 31, an n-type semiconductor layer 32, and a p-type semiconductor layer 134. Other layers may be inserted between the above-mentioned layers of the semiconductor laminated body 130.
  • the p-type semiconductor layer 134 is different from the p-type semiconductor layer 34 according to the first embodiment in that it does not have a ridge portion and a protrusion having the same height as the ridge portion, and is the same in other points.
  • the insulating layer 121 is formed in the entire region of the upper surface of the semiconductor laminated body 30 and includes a first opening 127 formed so as to extend along a first direction from the front end surface 136 to the rear end surface 137, and the semiconductor laminated body A dielectric layer disposed above the body 130.
  • the first electrode 125 is an electrode arranged above the semiconductor laminated body 130.
  • the first electrode 125 has a width of 2 ⁇ m from the inside of the first opening 127 of the insulating layer 121 and from the four side edges of the first opening 127. It is arranged on a part of the insulating layer 121.
  • the first electrode 125 is not arranged near the front end face 136 and the rear end face 137.
  • the end edge of the first opening 127 of the insulating layer 121 is arranged inside the outer peripheral edge of the first electrode 125 with a distance of 0.1 ⁇ m or more and less than the width of the first electrode.
  • the edge of the first opening 127 is arranged inside the edge of the second opening with a distance of 0.1 ⁇ m or more and less than 5 ⁇ m.
  • the second electrode 123 is an electrode arranged above the first electrode 125 and the insulating layer 121.
  • the second electrode 123 is disposed between the at least one end surface of the front end surface 136 and the rear end surface 137 and the first opening 127 and above the insulating layer 121.
  • the second electrode 123 is arranged so as not to contact both end faces of the front end face 136 and the rear end face 137.
  • the outer peripheral edge of the second electrode 123 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 136 and the rear end face 137.
  • the adhesion auxiliary layer 122 is a layer arranged between the second electrode 123 and the insulating layer 121.
  • the adhesion auxiliary layer 122 has a second opening 126 at least partially overlapping the first opening 127 in a plan view of the adhesion auxiliary layer 122.
  • at least a part of the first electrode 125 is arranged inside the first opening 127 and the second opening 126 in a plan view of the adhesion auxiliary layer 122.
  • the second electrode 123 can contact the first electrode 125 arranged inside the first opening 127 and the second opening 126.
  • the entire first electrode 125 is arranged inside the second opening 126 in the plan view of the adhesion auxiliary layer 122, and a part of the first electrode 125 is formed in the first opening 127. It is placed inside.
  • the adhesion auxiliary layer 122 is disposed between the at least one end surface of the front end surface 136 and the rear end surface 137 and the first opening 127 and above the insulating layer 121.
  • the outer peripheral edge of the adhesion auxiliary layer 122 is arranged at a distance of 0.1 ⁇ m or more and less than 10 ⁇ m from at least one of the front end face 136 and the rear end face 137, and the end edge of the second opening 126 is: It is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the edge of the first opening 127 to the outside.
  • the semiconductor laser device 110 according to the present embodiment having the above-described configuration can exert the effect of suppressing the peeling of the second electrode 123, similarly to the semiconductor laser device 10 according to the first embodiment. ..
  • the semiconductor laser device according to the present embodiment is different from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the insulating layer and the adhesion auxiliary layer.
  • the semiconductor laser device according to the present embodiment will be described with reference to FIGS. 6A to 6C, focusing on the differences from the semiconductor laser device 10 according to the first embodiment.
  • FIG. 6A is a schematic plan view showing the overall configuration of the semiconductor laser device 210 according to this embodiment.
  • a part of the second electrode 223 is cut out, and only the contour of the cut out part is shown by a broken line.
  • a part of the adhesion auxiliary layer 222 is cut away, and only the outline of the cut out portion is shown by a broken line.
  • 6B and 6C are schematic cross-sectional views showing the overall configuration of the semiconductor laser device 210 according to this embodiment. 6B and 6C show cross sections taken along line VIB-VIB and line VIC-VIC shown in FIG. 6A, respectively.
  • the semiconductor laser device 210 has a semiconductor laminated body 30, an insulating layer 221, a first electrode 25, a second electrode 223, an adhesion auxiliary layer 222, and n. And a side electrode 28.
  • the insulating layer 221 is formed in the entire region of the upper surface of the semiconductor stacked body 30 and includes a first opening 227 formed so as to extend along the first direction from the front end surface 36 to the rear end surface 37, and the semiconductor stacked body 221.
  • the second electrode 223 is an electrode arranged above the first electrode 25 and the insulating layer 221.
  • the second electrode 223 is disposed between at least one of the front end face 36 and the rear end face 37 and the first opening 227 and above the insulating layer 221. As shown in FIG. 6A, the second electrode 223 is not arranged on both end faces of the front end face 36 and the rear end face 37.
  • the edge of the first opening 227 of the insulating layer 221 is arranged outside the outer edge of the first electrode 25 with a distance of 0.1 ⁇ m or more and less than 10 ⁇ m, and the outer edge of the second electrode 223 has a front edge.
  • the surface 36 and the rear end surface 37 are arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m.
  • the adhesion auxiliary layer 222 is a layer arranged between the second electrode 223 and the insulating layer 221.
  • the adhesion auxiliary layer 222 has a second opening 226 at least partially overlapping the first opening 227 in a plan view of the adhesion auxiliary layer 222.
  • the edge of the first opening 27 is arranged outside the edge of the second opening 26 on both the long side and the short side when the adhesion auxiliary layer 22 is viewed in a plan view.
  • at least a part of the first electrode 25 is arranged inside the first opening 227 and the second opening 226 in a plan view of the adhesion auxiliary layer 222.
  • the second electrode 223 can contact the first electrode 25 arranged inside the first opening 227 and the second opening 226.
  • the entire first electrode 25 is arranged inside the first opening 227 and the second opening 226 in the plan view of the adhesion auxiliary layer 222.
  • the adhesion auxiliary layer 222 is disposed between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 227 and above the insulating layer 221.
  • the edge of the second opening 226 is arranged inside the edge of the first opening 227 in the first direction and the second direction with a distance of, for example, 0.1 ⁇ m or more and less than 10 ⁇ m.
  • the edge of the second opening 226 is arranged in the first opening 227 with a distance of 2.8 ⁇ m from the edge of the first opening 227.
  • the outer peripheral edge of the adhesion aiding layer 222 is arranged 9 ⁇ m away from the front end face 36 and 9 ⁇ m apart from the rear end face 37.
  • the outer peripheral edge of the adhesion auxiliary layer 222 is arranged at a distance of 6.6 ⁇ m from the side end surface 38 of the semiconductor stacked body 30.
  • the outer peripheral edge of the adhesion aiding layer 222 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from at least one of the front end face 36 and the rear end face 37, and the end edge of the second opening 226 is It is arranged inside the edge of the first opening 227 with a distance of 0.1 ⁇ m or more and less than 10 ⁇ m.
  • the outer peripheral edge of the second electrode 223 is arranged inside the outer peripheral edge of the adhesion auxiliary layer 222 and outside the second opening 226.
  • the outer peripheral edge of the adhesion auxiliary layer 222 is located 9 ⁇ m from the front end face 36 and the rear end face 37
  • the second electrode 223 is located 10 ⁇ m from the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the adhesion aiding layer 222 is located 6.6 ⁇ m from the side end surface 38 of the semiconductor laminate 30, and the outer peripheral edge of the second electrode 223 is located 7.6 ⁇ m from the side end surface 38.
  • the edge of the second opening 26 is located 70 ⁇ m from the side end surface 38. Therefore, as shown in FIG. 6B, in the cross section VIB-VIB at the distance of 1 ⁇ 2 of the first direction dimension of the adhesion aiding layer 222 from the rear end surface 37, the second opening 226 exists, but as shown in FIG. 6C. As described above, the second opening 26 does not exist in the cross section VIC-VIC at a distance of 6.6 ⁇ m or more and 13.8 ⁇ m or less from the rear end surface 37.
  • the semiconductor laser device 210 according to the present embodiment can exert the effect of suppressing the peeling of the second electrode 223, similarly to the semiconductor laser device 10 according to the first embodiment. ..
  • the adhesion auxiliary layer 222 has all the edges of the second opening 226 in the plan view of the adhesion auxiliary layer 222. It is arranged inside the edge of the opening 227. As a result, it is possible to increase the contact area between the adhesion auxiliary layer 222 and the second electrode 223 compared to the semiconductor laser device 10 according to the first embodiment. Therefore, in the present embodiment, peeling of the second electrode 223 can be further suppressed.
  • all the edges of the second opening 226 may be arranged on the edges of the first opening 27. With such a configuration as well, the contact area between the adhesion auxiliary layer 222 and the second electrode 223 can be increased more than in the semiconductor laser device 10 according to the first embodiment, so peeling of the second electrode 223 can be suppressed. ..
  • FIGS. 7A to 7F A semiconductor laser device according to the fourth embodiment will be described.
  • the semiconductor laser device according to the present embodiment is different from the semiconductor laser device 10 according to the first embodiment mainly in the structure of the adhesion auxiliary layer.
  • the semiconductor laser device according to the present embodiment will be described with reference to FIGS. 7A to 7F, focusing on the differences from the semiconductor laser device 10 according to the first embodiment.
  • FIG. 7A is a schematic plan view showing the overall configuration of the semiconductor laser device 310 according to the present embodiment.
  • FIG. 7A in order to show the configuration of the adhesion auxiliary layer 322 and the like, a part of the second electrode 323 is cut out, and only the outline of the cutout part is shown by a broken line.
  • 7B to 7F are schematic cross-sectional views showing the overall configuration of semiconductor laser device 310 according to the present embodiment. 7B to 7F show cross sections taken along line VIIB-VIIB to VIIF-VIIF shown in FIG. 7A, respectively.
  • semiconductor laser device 310 includes semiconductor laminated body 30, insulating layer 21, first electrode 25, second electrode 323, adhesion auxiliary layer 322, and n. And a side electrode 28.
  • the second electrode 323 is an electrode arranged above the first electrode 25 and the insulating layer 21.
  • the second electrode 323 is arranged between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 27 of the insulating layer 21 and above the insulating layer 21.
  • the second electrode 323 is arranged so as not to contact both end faces of the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the second electrode 323 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 36 and the rear end face 37.
  • the adhesion auxiliary layer 322 is a layer arranged between the second electrode 323 and the insulating layer 21.
  • the adhesion auxiliary layer 322 has a second opening 326 at least partially overlapping the first opening 27 in a plan view of the adhesion auxiliary layer 322.
  • at least a part of the first electrode 25 is arranged inside the first opening 27 and the second opening 326 in a plan view of the adhesion auxiliary layer 322.
  • the edge of the first opening 27 is arranged inside the edge of the second opening 26 on both the long side and the short side when the adhesion auxiliary layer 22 is viewed in a plan view.
  • the second electrode 323 can contact the first electrode 25 arranged inside the first opening 27 and the second opening 326.
  • the entire first electrode 25 is arranged inside the first opening 27 and the second opening 326 in a plan view of the adhesion auxiliary layer 322.
  • the adhesion auxiliary layer 322 is disposed between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 27 and above the insulating layer 21.
  • the outer peripheral edge of the adhesion auxiliary layer 322 is arranged at a distance of 0.1 ⁇ m or more and less than 10 ⁇ m from at least one of the front end face 36 and the rear end face 37, and the end edge of the second opening 326 is It is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the edge of the first opening 27 to the outside.
  • the edge of the second opening 326 is arranged outside the edge of the first opening 27 in the first direction and the second direction with a distance of, for example, 0.1 ⁇ m or more and less than 10 ⁇ m. Specifically, the edge of the second opening 326 is arranged outside the edge of the first opening 27 with a distance of 2.8 ⁇ m.
  • the outer peripheral edge of the adhesion aiding layer 322 is arranged at a distance of 9 ⁇ m from the front end face 36 and at a distance of 9 ⁇ m from the rear end face 37.
  • the outer peripheral edge of the adhesion auxiliary layer 322 is arranged at a distance of 6.6 ⁇ m from the side end surface 38 of the semiconductor stacked body 30.
  • the outer peripheral edge of the adhesion auxiliary layer 322 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from at least one of the front end face 36 and the rear end face 37, and the edge of the second opening 326 is It is arranged outside the end edge of the first opening 27 with a distance of 0.1 ⁇ m or more and less than 10 ⁇ m.
  • the outer peripheral edge of the second electrode 323 is arranged inside the outer peripheral edge of the adhesion auxiliary layer 322 and outside the second opening 326.
  • the outer peripheral edge of the adhesion aiding layer 322 is located 9 ⁇ m from the front end face 36 and the rear end face 37
  • the second electrode 323 is located 10 ⁇ m from the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the adhesion auxiliary layer 322 is located at a position 6.6 ⁇ m from the side end surface 38 of the semiconductor stacked body 30, and the outer peripheral edge of the second electrode 323 is located at a position 7.6 ⁇ m from the side end surface 38.
  • the edge of the second opening 326 is located 70 ⁇ m from the side end surface 38. Therefore, as shown in FIG. 7B, in the cross section VIIB-VIIB at the distance of 1 ⁇ 2 of the first direction dimension of the adhesion aiding layer 322 from the rear end face 37, the second opening 326, the first opening 27, and the first opening 27
  • the electrode 25 is present, and as shown in FIGS.
  • the semiconductor laser device 310 according to the present embodiment can exert the effect of suppressing the peeling of the second electrode 323 similarly to the semiconductor laser device 10 according to the first embodiment. ..
  • one of the front end face 36 and the rear end face 37 and the end edge of the first opening portion 27 on the one end face side has one end.
  • An end edge of the second opening 326 on the end face side is arranged. This allows the first electrode 25 to be arranged up to the edge of the first opening 27 closest to the end face without the adhesion auxiliary layer 322 and the first electrode 25 coming into contact with each other. Therefore, it is possible to suppress an increase in the resistance value of the semiconductor laser device 310 and maximize the area of the first electrode 25 near the end face.
  • the first electrode 25 can be arranged up to the edge of the first opening 27 without the adhesion auxiliary layer 322 and the first electrode 25 coming into contact with each other. Therefore, it is possible to suppress an increase in the resistance value of the semiconductor laser device 310 and maximize the area of the first electrode 25 near the side end surface.
  • FIGS. 8A and 8B focusing on the differences from the semiconductor laser device 10 according to the first embodiment.
  • FIG. 8A is a schematic plan view showing the overall configuration of the semiconductor laser device 410 according to the present embodiment.
  • FIG. 8A in order to show the configuration of the adhesion auxiliary layer 422 and the like, a part of the second electrode 423 is cut out, and only the contour of the cutout part is shown by a broken line.
  • FIG. 8A in order to show the configuration of the first electrode 425, a part of the insulating layer 421 is cut out, and only the contour of the cut out part is shown by a broken line.
  • FIG. 8B is a schematic cross-sectional view showing the overall configuration of semiconductor laser device 410 according to the present embodiment.
  • FIG. 8B shows a cross section taken along line VIIIB-VIIIB shown in FIG. 8A.
  • the semiconductor laser device 410 has a semiconductor laminated body 30, an insulating layer 421, a first electrode 425, a second electrode 423, an adhesion auxiliary layer 422, and n. And a side electrode 28.
  • the first electrode 425 covers at least a part of the side surface as well as the upper surface of the ridge portion 35, as shown in FIG. 8B. Further, the first electrode 425 covers at least a part of the upper surface of the p-type semiconductor layer 34 on the ridge portion 35 side of the groove portion 35t between the ridge portion 35 and the protruding portion 35w having the same height as the ridge portion 35. ..
  • the insulating layer 421 is formed in the entire region of the upper surface of the semiconductor stacked body 30 and includes a first opening 427 formed so as to extend along the first direction from the front end surface 36 to the rear end surface 37, and the semiconductor stacked layer A dielectric layer disposed above the body 30. As shown in FIG. 8A, at least a part of the upper surface of the ridge portion 35 is arranged inside the first opening 427 in the plan view of the adhesion auxiliary layer 422. Further, as shown in FIGS. 8A and 8B, at least a part of the insulating layer 421 is disposed on the first electrode 425.
  • the insulating layer 421 is arranged on the region of the first electrode 425 arranged on the side surface of the ridge portion 35 and on the region arranged outside thereof. Further, the entire peripheral edge of the first opening 427 is arranged on the first electrode 425.
  • the first electrode 425 is formed before the insulating layer 421 in the manufacturing of the semiconductor laser device 410. Specifically, the outer peripheral edge of the first electrode 425 is arranged outside the edge of the first opening 427 with a distance of 0.1 ⁇ m or more and less than 10 ⁇ m.
  • the second electrode 423 is an electrode arranged above the first electrode 425 and the insulating layer 421.
  • the second electrode 423 is arranged between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 427 of the insulating layer 421, and above the insulating layer 421.
  • the second electrode 423 is not arranged on both end faces of the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the second electrode 323 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 36 and the rear end face 37.
  • the adhesion auxiliary layer 422 is a layer arranged between the second electrode 423 and the insulating layer 421.
  • the adhesion auxiliary layer 422 has a second opening 426 at least partially overlapping the first opening 427 in a plan view of the adhesion auxiliary layer 422.
  • at least a part of the first electrode 425 is arranged inside the first opening 427 and the second opening 426 in a plan view of the adhesion auxiliary layer 422. Accordingly, the second electrode 423 can be in contact with the first electrode 425 arranged inside the first opening 427 and the second opening 426.
  • the adhesion auxiliary layer 422 is disposed between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 427 and above the insulating layer 421. Specifically, the outer peripheral edge of the adhesion auxiliary layer 422 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from at least one of the front end face 36 and the rear end face 37, and the end edge of the second opening 426 is It is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the edge of the first opening 427.
  • the semiconductor laser device 410 according to the present embodiment having the above-described configuration, can exert the effect of suppressing the peeling of the second electrode 423, like the semiconductor laser device 10 according to the first embodiment. ..
  • FIGS. 9A and 9B focusing on the differences from the semiconductor laser device 10 according to the first embodiment.
  • FIG. 9A is a schematic plan view showing the overall configuration of the semiconductor laser device 510 according to this embodiment.
  • FIG. 9A in order to show the configuration of the adhesion auxiliary layer 522 and the like, a part of the second electrode 523 is cut out, and only the outline of the cut out part is shown by a broken line.
  • FIG. 9A in order to show the configuration of the insulating layer 521, a part of the adhesion auxiliary layer 522 is cut out, and only the contour of the cutout part is shown by a broken line.
  • FIG. 9B is a schematic cross-sectional view showing the overall configuration of semiconductor laser device 510 according to the present embodiment.
  • FIG. 9B shows a cross section taken along line IXB-IXB shown in FIG. 9A.
  • the semiconductor laser device 510 has a semiconductor laminated body 30, an insulating layer 521, a first electrode 25, a second electrode 523, an adhesion auxiliary layer 522, and n. And a side electrode 28.
  • the insulating layer 521 is formed in the entire region of the upper surface of the semiconductor stacked body 30 and includes a first opening 527 formed so as to extend along the first direction from the front end surface 36 to the rear end surface 37, and the semiconductor stacked layer 521 is formed.
  • a dielectric layer disposed above the body 30.
  • FIG. 9A at least a part of the upper surface of the ridge portion 35 is arranged inside the first opening 527 in a plan view of the adhesion auxiliary layer 522.
  • the insulating layer 521 is also arranged on the upper surface of the ridge portion 35 near the side surface of the ridge portion 35.
  • the edge of the first opening 527 of the insulating layer 521 is arranged outside the outer peripheral edge of the first electrode 25 with a distance of 0.1 ⁇ m or more and less than 10 ⁇ m. Further, the edge of the first opening 527 is located on the upper surface of the ridge portion 35, and is arranged at a distance of 0.5 ⁇ m or more and less than 2 ⁇ m from a portion (corner portion of the ridge portion) where the side surface of the ridge portion 35 contacts the upper surface. To be done. The edge of the first opening 527 is outside the outer peripheral edge of the first electrode 25, and is arranged at a distance of 0.1 ⁇ m or more and less than 1 ⁇ m from the outer peripheral edge of the first electrode 25.
  • the second electrode 523 is an electrode arranged above the first electrode 525 and the insulating layer 521.
  • the second electrode 523 is disposed between the at least one end surface of the front end surface 36 and the rear end surface 37 and the first opening 527 of the insulating layer 521 and above the insulating layer 521.
  • the second electrode 523 is not arranged on both end faces of the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the second electrode 523 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 36 and the rear end face 37.
  • the adhesion auxiliary layer 522 is a layer arranged between the second electrode 523 and the insulating layer 521.
  • the adhesion auxiliary layer 522 has a second opening 526 at least partially overlapping the first opening 527 in a plan view of the adhesion auxiliary layer 522.
  • at least a part of the first electrode 25 is arranged inside the first opening 527 and the second opening 526 in a plan view of the adhesion auxiliary layer 522. Accordingly, the second electrode 523 can contact the first electrode 25 arranged inside the first opening 527 and the second opening 526.
  • the adhesion auxiliary layer 522 is disposed between at least one of the front end face 36 and the rear end face 37 and the first opening 527 and above the insulating layer 521. Specifically, the outer peripheral edge of the adhesion auxiliary layer 522 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from at least one of the front end face 36 and the rear end face 37, and the end edge of the second opening 526 is The first opening 527 is arranged outside the edge of the first opening 527 with a distance of 0.1 ⁇ m or more and less than 20 ⁇ m.
  • the semiconductor laser device 510 according to the present embodiment having the above-described configuration, can exert the effect of suppressing the peeling of the second electrode 523, similarly to the semiconductor laser device 10 according to the first embodiment. ..
  • the semiconductor laser device according to the present embodiment differs from the semiconductor laser device 310 according to the fourth embodiment mainly in that it includes a submount joined to the second electrode.
  • the semiconductor laser device according to the present embodiment will be described with reference to FIGS. 10A to 10C focusing on the differences from the semiconductor laser device 310 according to the fourth embodiment.
  • 10A, 10B, and 10C are a schematic plan view, a first cross-sectional view, and a second cross-sectional view showing the overall configuration of the semiconductor laser device 610 according to the present embodiment, respectively.
  • 10B and 10C show cross sections taken along line XB-XB and line XC-XC shown in FIG. 10A, respectively.
  • the semiconductor laser device 610 has a semiconductor laminated body 30, an insulating layer 21, a first electrode 25, a second electrode 24, and an adhesion auxiliary layer 322. And an n-side electrode 28 and a submount 13. 10B and 10C, the wire 18 bonded to the n-side electrode 28 and the metal ball 17 that joins the wire 18 and the n-side electrode 28 are also shown.
  • the adhesion auxiliary layer 322 is a layer having the same structure as the adhesion auxiliary layer 322 according to the fourth embodiment.
  • the second electrode 24 is an electrode arranged above the first electrode 25 and the insulating layer 21 (below in FIGS. 10B and 10C).
  • the second electrode 24 is arranged between at least one of the front end face 36 and the rear end face 37 and the first opening 27.
  • the second electrode 24 is arranged so as not to contact at least one of the front end face 36 and the rear end face 37.
  • the second electrode 24 is arranged so as not to contact both end faces of the front end face 36 and the rear end face 37.
  • the outer peripheral edge of the second electrode 523 is arranged at a distance of 0.1 ⁇ m or more and less than 20 ⁇ m from the front end face 36 and the rear end face 37.
  • the second electrode 24 joins the semiconductor laminate 30, the first electrode 25, the adhesion auxiliary layer 322, and the like to the submount 13.
  • the second electrode 24 is made of, for example, an alloy containing Au. More specifically, the second electrode 24 is an alloy such as AuSn.
  • the submount 13 is a mounting member that functions as a heat sink.
  • the submount 13 includes a metal layer 13a and a base 13b.
  • the metal layer 13a is a layer made of metal.
  • the metal forming the metal layer 13a is not particularly limited.
  • the metal layer 13a is, for example, a metal film in which Ti, Pt, and Au are stacked in order from the base 13b.
  • the base 13b is a bulk-shaped member that occupies most of the submount 13.
  • the base 13b has a rectangular parallelepiped shape.
  • the material forming the base 13b is not particularly limited.
  • base 13b is a polycrystalline SiC substrate.
  • a Si or AlN substrate may be used as the base 13b, or a single crystal SiC or diamond substrate may be used to improve heat dissipation.
  • the semiconductor laser device 610 according to the present embodiment can be manufactured, for example, by joining the submount 13 and the semiconductor laser device 310 according to the above-described fourth embodiment with solder made of AuSn. More specifically, an AuSn solder layer is formed on the metal layer 13a of the submount 13, and the semiconductor laser device 310 is junction-down mounted on the submount 13 (that is, the second electrode 323 of the semiconductor laser device 310,
  • the semiconductor laser device 610 according to the present embodiment can be manufactured by joining the mount 13 with the AuSn solder layer. At this time, the AuSn solder layer and the second electrode 323 made of Au are alloyed to form the second electrode 24 made of AuSn.
  • the semiconductor laser device 610 according to the present embodiment can efficiently dissipate the heat generated in the active layer 33 and the like by including the submount 13 bonded to the second electrode 24 as described above. Therefore, the influence of heat on the active layer 33 can be reduced.
  • the submount 13 includes the end surface 13s intersecting the first direction, and the front end surface 36 in the plan view of the adhesion auxiliary layer 322.
  • the end surface 13s may be disposed between the first opening 27 and the first opening 27.
  • the front end face 36 is arranged outside the submount 13 with respect to the end face 13 s of the submount 13, so that the submount 13 of the laser light emitted from the semiconductor laser device 610 is disposed. Kicking due to can be reduced.
  • the front end face 36 is arranged so as to protrude from the end face 13s of the submount 13 by a distance of 0.1 ⁇ m or more and less than 20 ⁇ m.
  • the first opening 27 is arranged at a position overlapping the submount 13 in a plan view of the insulating layer 21.
  • the internal region of the first opening 27 of the insulating layer 21 is a region where the first electrode 25 is arranged, and the current is confined in the region. Therefore, the region is a region of the semiconductor stacked body 30 that generates the largest amount of heat.
  • the internal region of the first opening 27 that generates a large amount of heat and the submount 13 are arranged so as to overlap each other. It can secure the heat dissipation of.
  • FIGS. 11A to 11C focusing on the differences from the semiconductor laser device 610 according to the seventh embodiment.
  • 11A, 11B, and 11C are a schematic plan view, a first cross-sectional view, and a second cross-sectional view showing the overall configuration of the semiconductor laser device 710 according to the present embodiment, respectively.
  • 11B and 11C show cross sections taken along line XIB-XIB and line XIC-XIC shown in FIG. 11A, respectively.
  • the semiconductor laser device 710 has a semiconductor laminated body 30, an insulating layer 21, a first electrode 25, a second electrode 323, and an adhesion auxiliary layer 322.
  • 11B and 11C, the wire 18 bonded to the n-side electrode 28 and the metal ball 17 that joins the wire 18 and the n-side electrode 28 are also shown.
  • the second electrode 323 has the same configuration as the second electrode 323 according to the fourth embodiment.
  • the second electrode 323 joins the semiconductor laminated body 30, the first electrode 25, the adhesion auxiliary layer 322, and the like to the separation layer 15.
  • the solder layer 12 is a layer that joins the submount 13 and the second electrode 323.
  • the solder layer 12 is formed on the metal layer 13a of the submount 13, for example, AuSn solder.
  • the separation layer 15 is a layer arranged between the solder layer 12 and the second electrode 323, and separates the solder layer 12 and the second electrode 323.
  • the separation layer 15 can suppress integration of the second electrode 323 and the solder layer 12.
  • the separation layer 15 is formed of Pt, for example.
  • the semiconductor laser device 710 according to the present embodiment having the above-described configuration also achieves the same effects as the semiconductor laser device 610 according to the above-described seventh embodiment.
  • the semiconductor laser device according to the present embodiment mainly differs from the semiconductor laser device 310 according to the fourth embodiment in the configuration of the first electrode.
  • the semiconductor laser device according to the present embodiment will be described below with reference to FIGS. 12A to 12C focusing on the differences from the semiconductor laser device 310 according to the fourth embodiment.
  • FIG. 12A is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device 810 according to this embodiment.
  • 12B and 12C are schematic partially enlarged cross-sectional views showing the configuration of the first electrode 825 of the semiconductor laser device 810 according to this embodiment.
  • FIG. 12A shows a cross section at the same position as the cross section of the semiconductor laser device 310 according to the fourth embodiment shown in FIG. 7B.
  • FIG. 12B is an enlarged view showing the inside of a broken line frame XIIB in the cross-sectional view shown in FIG. 12A.
  • FIG. 12C is an enlarged view showing the inside of the broken line frame XIIC in the enlarged sectional view shown in FIG. 12B.
  • the semiconductor laser device 810 has a semiconductor laminated body 30, an insulating layer 21, a first electrode 825, a second electrode 323, an adhesion auxiliary layer 322, and n. And a side electrode 28.
  • the insulating layer 21 is made of SiO 2 having a film thickness of 300 nm.
  • the adhesion auxiliary layer 322 includes a first layer 322a and a second layer 322b in order from the insulating layer 21 side.
  • the first layer 322a is made of Ti with a film thickness of 10 nm
  • the second layer 322b is made of Pt with a film thickness of 50 nm.
  • the first electrode 825 is arranged on the upper surface of the ridge portion 35 and includes a lower layer electrode 825a and an upper layer electrode 825b.
  • the lower layer electrode 825a is a layer of the first electrode 825 that is arranged at a position close to the semiconductor stacked body 30.
  • the lower electrode 825a is made of Pd.
  • the film thickness T1 of the lower layer electrode 825a is 40 nm.
  • the upper layer electrode 825b is a layer of the first electrode 825 that is arranged at a position far from the semiconductor stacked body 30.
  • the upper electrode 825b is made of Pt.
  • the film thickness T2 of the upper layer electrode 825b is 35 nm.
  • the first electrode 825 is covered with the second electrode 323 made of Au having a thickness of about 1.6 ⁇ m.
  • the cross section of the end portion of the first electrode 825 is inclined as shown in FIGS. 12B and 12C, and is inclined toward the end from a corner portion through a linear portion midway. Becomes gentle. Further, the cross section of the end of the first electrode 825 does not have a corner (that is, has a finite curvature).
  • the maximum inclination angle ⁇ 1 at the end of the first electrode 825 is 72°.
  • the maximum tilt angle ⁇ 1 is not limited to 72°.
  • the maximum inclination angle ⁇ 1 may be 45° or more and 85° or less.
  • the maximum inclination angle ⁇ 1 is defined as the angle formed by the straight line portion (that is, the inflection point portion of the slope) existing between the upper surface of the upper layer electrode 825b and the lowermost end and the upper surface of the ridge portion 35.
  • the end portion of the first electrode 825 has a skirt portion, and in the present embodiment, the hem portion length L1 is 28 nm.
  • the hem length L1 is defined as the length from the portion where the slope of the linear slope starts to change gradually and gradually to the region where the film thickness becomes zero.
  • the length L2 of the inclined portion at the end of the first electrode 825 is 45 nm.
  • the inclined portion is defined by the length from the end of the region where the upper surface of the first electrode 825 is flat to the region where the film thickness becomes zero.
  • the region having a flat upper surface is not limited to a completely flat region, and includes a substantially flat region.
  • a region in which the amount of change in film thickness is 10% or less may be defined as a flat region.
  • the region where the film thickness is zero is not limited to the region where the film thickness is completely zero, and includes a region where the film thickness is substantially zero.
  • a region where the film thickness is 5% or less of the maximum film thickness may be defined as a region where the film thickness is zero.
  • the semiconductor laser device 810 having the above configuration is suitable for junction-up mounting.
  • the semiconductor laser device 810 when the semiconductor laser device 810 is subjected to junction down mounting on the submount, it is made of Pt in order to prevent the solder made of AuSn or the like arranged on the submount from diffusing to the semiconductor laminated body 30 side. It is necessary to thicken the upper electrode 825b.
  • the junction-up mounting since it is not necessary to increase the thickness of the upper layer electrode 825b, the relatively thin upper layer electrode 825b can be used as described above. Thereby, cost reduction of the semiconductor laser device 810 can be realized.
  • the semiconductor laser device according to the present embodiment mainly differs from the semiconductor laser device 810 according to the ninth embodiment in the configuration of the first electrode.
  • the semiconductor laser device according to the present embodiment will be described with reference to FIGS. 13A and 13B, focusing on the differences from the semiconductor laser device 810 according to the ninth embodiment.
  • FIG. 13A and 13B are schematic partially enlarged cross-sectional views showing the configuration of the first electrode 925 of the semiconductor laser device 910 according to the present embodiment.
  • FIG. 13A shows a cross section at the same position as the cross section of the semiconductor laser device 810 according to the ninth embodiment shown in FIG. 12B.
  • FIG. 13B is an enlarged view showing the inside of a broken line frame XIIIB in the enlarged cross-sectional view shown in FIG. 13A.
  • the semiconductor laser device 910 according to the present embodiment is similar to the semiconductor laser device 810 according to the ninth embodiment in that the semiconductor laminated body 30, the insulating layer 21, the first electrode 925, the second electrode 323, and the close contact with each other.
  • the auxiliary layer 322 and the n-side electrode 28 are provided.
  • the first electrode 925 is arranged on the upper surface of the ridge portion 35 and includes a lower layer electrode 925a and an upper layer electrode 925b.
  • the lower layer electrode 925a is a layer of the first electrode 925 that is arranged at a position close to the semiconductor stacked body 30.
  • the lower electrode 925a is made of Pd.
  • the film thickness T1 of the lower layer electrode 925a is 40 nm.
  • the upper layer electrode 925b is a layer of the first electrode 925 that is arranged at a position far from the semiconductor stacked body 30.
  • the upper electrode 925b is made of Pt.
  • the film thickness T2 of the upper layer electrode 925b is 100 nm.
  • the first electrode 925 is covered with the second electrode 323 made of Au having a thickness of about 2.0 ⁇ m.
  • the cross section of the end portion of the first electrode 925 is inclined as shown in FIGS. 13A and 13B, and is inclined toward the end from a corner portion through a linear portion in the middle. Becomes gentle. Further, the cross section of the end of the first electrode 925 does not have a corner (that is, has a finite curvature).
  • the maximum inclination angle ⁇ 1 at the end of the first electrode 925 is 72°.
  • the maximum tilt angle ⁇ 1 is not limited to 72°.
  • the maximum inclination angle ⁇ 1 may be 45° or more and 85° or less.
  • the end portion of the first electrode 925 has a skirt portion, and in the present embodiment, the hem portion length L1 is 28 nm.
  • the length L2 of the inclined portion at the end of the first electrode 925 is 45 nm.
  • the inclined portion is defined as described in the ninth embodiment.
  • the semiconductor laser device 910 having the above configuration is suitable for junction down mounting.
  • the semiconductor laser device 910 since the upper layer electrode 925b made of Pt is thickened, when the semiconductor laser device 910 is junction-down mounted on the submount, the solder made of AuSn or the like arranged on the submount is a semiconductor. It is possible to suppress the diffusion to the laminated body 30 side.
  • the film thickness T2 of the upper electrode 925b made of Pt may be, for example, 50 nm or more and less than 200 nm.
  • the first electrode is not covered with the adhesion auxiliary layer, but a part of the first electrode may be covered with the adhesion auxiliary layer.
  • the second electrode is not arranged on the front end face and the rear end face, but the second electrode may be arranged on at least one of the front end face and the rear end face. Also in such a configuration, the second electrode and the adhesion auxiliary layer, between at least one end face of the front end face and the rear end face and the first opening, by being arranged above the insulating layer, The peeling of the second electrode can be suppressed.
  • the configuration of the first electrode 825 of the semiconductor laser device 810 according to the ninth embodiment can be applied to each semiconductor laser device according to the first to sixth embodiments.
  • a semiconductor laser device suitable for junction-up mounting can be realized.
  • the configuration of the first electrode 925 of the semiconductor laser device 910 according to the tenth embodiment can be applied to each semiconductor laser device according to the first to eighth embodiments.
  • a semiconductor laser device suitable for junction down mounting can be realized.
  • the semiconductor laser device of the present disclosure is particularly useful in, for example, a headlight light source that requires high reliability.

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022019054A1 (ja) * 2020-07-20 2022-01-27 ソニーグループ株式会社 半導体レーザおよび半導体レーザ装置
WO2023162929A1 (ja) * 2022-02-22 2023-08-31 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子、及び半導体レーザ素子の製造方法
WO2023223859A1 (ja) * 2022-05-19 2023-11-23 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子、及び半導体発光装置
EP4283803A4 (en) * 2021-01-22 2024-08-28 Kyocera Corporation LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LASER ELEMENT AND METHOD AND DEVICE FOR PRODUCING SAME

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109291A (ja) * 2003-10-01 2005-04-21 Nichia Chem Ind Ltd 半導体レーザ素子
JP2011135016A (ja) * 2009-12-25 2011-07-07 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US20170054271A1 (en) * 2014-04-11 2017-02-23 Osram Opto Semiconductors Gmbh Semiconductor Strip Laser and Semiconductor Component
WO2018180524A1 (ja) * 2017-03-28 2018-10-04 パナソニック株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013331A (ja) 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 半導体レーザ素子
JP2007027572A (ja) * 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP4948307B2 (ja) * 2006-07-31 2012-06-06 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP5100407B2 (ja) 2008-01-17 2012-12-19 シャープ株式会社 半導体発光素子およびそれを用いた半導体発光装置
JP2010062300A (ja) 2008-09-03 2010-03-18 Rohm Co Ltd 窒化物半導体素子およびその製造方法
JP2011165869A (ja) * 2010-02-09 2011-08-25 Mitsubishi Electric Corp 半導体発光素子及びその製造方法
JP5425172B2 (ja) 2011-12-15 2014-02-26 ソニー株式会社 半導体レーザ素子及び半導体レーザ素子の製造方法
JP2020077715A (ja) * 2018-11-06 2020-05-21 富士通株式会社 光モジュール、光通信機器および製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109291A (ja) * 2003-10-01 2005-04-21 Nichia Chem Ind Ltd 半導体レーザ素子
JP2011135016A (ja) * 2009-12-25 2011-07-07 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US20170054271A1 (en) * 2014-04-11 2017-02-23 Osram Opto Semiconductors Gmbh Semiconductor Strip Laser and Semiconductor Component
WO2018180524A1 (ja) * 2017-03-28 2018-10-04 パナソニック株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022019054A1 (ja) * 2020-07-20 2022-01-27 ソニーグループ株式会社 半導体レーザおよび半導体レーザ装置
US12603478B2 (en) 2020-07-20 2026-04-14 Sony Group Corporation Semiconductor laser and semiconductor laser device
EP4283803A4 (en) * 2021-01-22 2024-08-28 Kyocera Corporation LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LASER ELEMENT AND METHOD AND DEVICE FOR PRODUCING SAME
WO2023162929A1 (ja) * 2022-02-22 2023-08-31 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子、及び半導体レーザ素子の製造方法
WO2023223859A1 (ja) * 2022-05-19 2023-11-23 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子、及び半導体発光装置

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