WO2020105444A1 - Procédé de traitement et dispositif de traitement - Google Patents

Procédé de traitement et dispositif de traitement

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Publication number
WO2020105444A1
WO2020105444A1 PCT/JP2019/043619 JP2019043619W WO2020105444A1 WO 2020105444 A1 WO2020105444 A1 WO 2020105444A1 JP 2019043619 W JP2019043619 W JP 2019043619W WO 2020105444 A1 WO2020105444 A1 WO 2020105444A1
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WO
WIPO (PCT)
Prior art keywords
processing
gas
processing container
film
time
Prior art date
Application number
PCT/JP2019/043619
Other languages
English (en)
Japanese (ja)
Inventor
鈴木　幹夫
石坂　忠大
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2020105444A1 publication Critical patent/WO2020105444A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the present disclosure relates to a processing method and a processing device.
  • a technique is known in which a film forming process and a conditioning process using a reducing gas plasma are alternately performed a predetermined number of times, and then a cleaning process of removing deposits adhering to the inside of the chamber by the film forming process by plasma etching (for example, see Patent Document 1).
  • the present disclosure provides a technique capable of improving the reproducibility of the film forming process.
  • a processing method is a processing method in a processing apparatus that performs a film forming process for forming a metal film on a substrate housed in a processing container by an ALD method or a CVD method using an organometallic compound. And a step of determining whether or not the standby time of the processing device is a preset time or more, and performing a conditioning process on the processing container when the standby time is the preset time or more. And steps.
  • FIG. 1 is a schematic diagram showing a configuration example of a processing apparatus suitable for carrying out the processing method of one embodiment.
  • the processing apparatus 100 includes a processing container 1, a mounting table 2, a shower head 3, an exhaust unit 4, a gas supply mechanism 5, and a control unit 9.
  • the processing container 1 is made of a metal such as aluminum and has a substantially cylindrical shape.
  • the processing container 1 accommodates a semiconductor wafer (hereinafter referred to as “wafer W”) which is an example of a substrate.
  • a loading / unloading port 11 for loading or unloading the wafer W is formed on the sidewall of the processing container 1.
  • the loading / unloading port 11 is opened and closed by a gate valve 12.
  • An annular exhaust duct 13 having a rectangular cross section is provided on the main body of the processing container 1.
  • the exhaust duct 13 has a slit 13a formed along the inner peripheral surface thereof.
  • An exhaust port 13b is formed on the outer wall of the exhaust duct 13.
  • a ceiling wall 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing container 1.
  • a seal ring 15 hermetically seals between the exhaust duct 13 and the ceiling wall 14.
  • the mounting table 2 horizontally supports the wafer W in the processing container 1.
  • the mounting table 2 is formed in a disk shape having a size corresponding to the wafer W.
  • the mounting table 2 is made of a ceramic material such as AlN or a metal material such as aluminum or a nickel alloy, and has a heater 21 embedded therein for heating the wafer W.
  • the heater 21 is supplied with power from a heater power supply (not shown) to generate heat.
  • the output of the heater 21 is controlled by the temperature signal of a thermocouple (not shown) provided in the vicinity of the upper surface of the mounting table 2, so that the wafer W is controlled to a predetermined temperature.
  • the mounting table 2 is provided with a cover member 22 formed of a ceramic material such as alumina (Al 2 O 3 ) so as to cover the outer peripheral region and the side surface of the upper surface.
  • a support member 23 that supports the mounting table 2 is provided on the bottom surface of the mounting table 2.
  • the support member 23 extends from the center of the bottom surface of the mounting table 2 through the hole formed in the bottom wall of the processing container 1 to the lower side of the processing container 1, and the lower end thereof is connected to the elevating mechanism 24.
  • the elevating mechanism 24 elevates and lowers the mounting table 2 via the support member 23 between a processing position shown in FIG. 1 and a transfer position below which the wafer W can be transferred indicated by a chain double-dashed line.
  • a brim portion 25 is attached to the support member 23 below the processing container 1, and the atmosphere in the processing container 1 is separated from the outside air between the bottom surface of the processing container 1 and the brim portion 25.
  • a bellows 26 is provided which expands and contracts in accordance with the raising and lowering operation of the.
  • three wafer support pins 27 are provided so as to project upward from the lift plate 27a.
  • the wafer support pins 27 are moved up and down via an elevating plate 27a by an elevating mechanism 28 provided below the processing container 1.
  • the wafer support pin 27 is inserted into a through hole 2 a provided in the mounting table 2 at the transfer position and can be projected and retracted from the upper surface of the mounting table 2. By moving the wafer support pins 27 up and down, the wafer W is transferred between the transfer mechanism (not shown) and the mounting table 2.
  • the shower head 3 supplies the processing gas into the processing container 1 in a shower shape.
  • the shower head 3 is made of metal.
  • the shower head 3 is provided so as to face the mounting table 2 and has substantially the same diameter as the mounting table 2.
  • the shower head 3 has a main body 31 fixed to the ceiling wall 14 of the processing container 1, and a shower plate 32 connected below the main body 31.
  • a gas diffusion space 33 is formed between the main body 31 and the shower plate 32, and the gas introduction space 36 is formed in the gas diffusion space 33 so as to penetrate the ceiling wall 14 of the processing container 1 and the center of the main body 31. , 37 are provided.
  • An annular protrusion 34 that protrudes downward is formed on the peripheral edge of the shower plate 32.
  • a gas discharge hole 35 is formed on the inner flat surface of the annular protrusion 34.
  • the exhaust unit 4 exhausts the inside of the processing container 1.
  • the exhaust unit 4 has an exhaust pipe 41 connected to the exhaust port 13b, and an exhaust mechanism 42 having a vacuum pump, a pressure control valve, etc. connected to the exhaust pipe 41.
  • the gas in the processing container 1 reaches the exhaust duct 13 through the slit 13a, is exhausted from the exhaust duct 13 through the exhaust pipe 41 by the exhaust mechanism 42.
  • the gas supply mechanism 5 supplies the processing gas into the processing container 1.
  • the gas supply mechanism 5 has a Ta source gas supply source 51a, an N 2 gas supply source 53a, an NH 3 gas supply source 55a, and an N 2 gas supply source 57a.
  • the Ta source gas supply source 51a supplies Ta source gas, which is an organometallic compound gas, into the processing container 1 via a gas supply line 51b.
  • the gas supply line 51b is provided with a flow rate controller 51c, a storage tank 51d, and a valve 51e from the upstream side.
  • the downstream side of the valve 51e of the gas supply line 51b is connected to the gas introduction hole 36.
  • the Ta raw material gas supplied from the Ta raw material gas supply source 51a is temporarily stored in the storage tank 51d before being supplied into the processing container 1, and after being pressurized to a predetermined pressure in the storage tank 51d, the inside of the processing container 1 Is supplied to. Supply and stop of the Ta source gas from the storage tank 51d to the processing container 1 is performed by opening and closing the valve 51e.
  • N 2 gas supply source 53a supplies a N 2 gas as a carrier gas into the processing chamber 1 via a gas supply line 53b, functions as a purge gas.
  • the gas supply line 53b is provided with a flow rate controller 53c, a valve 53e, and an orifice 53f from the upstream side.
  • the downstream side of the orifice 53f of the gas supply line 53b is connected to the gas supply line 51b.
  • N 2 gas supplied from N 2 gas supply source 53a is supplied into the processing vessel 1 continuously during deposition of the wafer W.
  • the supply and stop of the N 2 gas from the N 2 gas supply source 53a to the processing container 1 are performed by opening and closing the valve 53e.
  • the gas is supplied to the gas supply line 51b at a relatively large flow rate by the storage tank 51d, but the gas supplied to the gas supply line 51b is suppressed from flowing backward to the N 2 gas supply line 53b by the orifice 53f.
  • the purge gas supply line and the carrier gas supply line may be provided separately.
  • NH 3 gas supply source 55a supplies NH 3 gas as a reducing gas through the gas supply line 55b to the processing chamber 1.
  • the gas supply line 55b is provided with a flow rate controller 55c, a storage tank 55d, and a valve 55e from the upstream side.
  • the downstream side of the valve 55e of the gas supply line 55b is connected to the gas introduction hole 37.
  • NH 3 NH 3 gas supplied from the gas supply source 55a is temporarily stored in the storage tank 55d before being supplied into the processing container 1, after being raised to a predetermined pressure in the storage tank 55d, the processing chamber 1 Is supplied to.
  • the supply and stop of the NH 3 gas from the storage tank 55d to the processing container 1 is performed by opening and closing the valve 55e.
  • N 2 gas supply source 57a supplies a N 2 gas as a carrier gas into the processing chamber 1 via the gas supply line 57 b, and has a function as a purge gas.
  • a flow rate controller 57c, a valve 57e, and an orifice 57f are provided on the gas supply line 57b from the upstream side.
  • the downstream side of the orifice 57f of the gas supply line 57b is connected to the gas supply line 55b.
  • N 2 gas supplied from N 2 gas supply source 57a is supplied into the processing vessel 1 continuously during deposition of the wafer W.
  • the supply and stop of N 2 gas from the N 2 gas supply source 57a to the processing container 1 are performed by opening and closing the valve 57e.
  • the gas is supplied to the gas supply line 55b at a relatively large flow rate by the storage tank 55d, but the gas supplied to the gas supply line 55b is suppressed from flowing backward to the N 2 gas supply line 57b by the orifice 57f.
  • the purge gas supply line and the carrier gas supply line may be provided separately.
  • the control unit 9 is, for example, a computer and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), and an auxiliary storage device.
  • the CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the processing device 100.
  • the control unit 9 may be provided inside the processing apparatus 100 or may be provided outside the processing apparatus 100. When the control unit 9 is provided outside the processing device 100, the control unit 9 can control the processing device 100 by a wired or wireless communication means.
  • the processing method of one embodiment will be described by taking the processing method in the processing apparatus 100 described above as an example.
  • a signal (hereinafter, referred to as “deposition start signal”) for the processing apparatus 100 to start the next deposition process is received even after a predetermined time (for example, 1 minute) has elapsed after the deposition process is completed.
  • the processing device 100 will be described as transitioning to the standby state.
  • the standby state is a state in which the film forming process can be started immediately when a film forming start signal is received, and for example, an inert gas such as N 2 gas or Ar gas is constantly supplied into the processing container 1. It is in a state.
  • the standby state may be a state in which the inside of the processing container 1 is maintained in a vacuum, for example.
  • FIG. 2 is a flowchart showing a processing method of one embodiment. The following processing method is repeatedly executed by the control unit 9 at predetermined time intervals.
  • the control unit 9 acquires the standby time of the processing device 100 (step S1).
  • the standby time is the elapsed time from the point in time when the last process executed in the film forming process and the conditioning process in the processing apparatus 100 is completed.
  • the film forming process and the conditioning process will be described later.
  • control unit 9 determines whether or not the standby time acquired in step S1 is equal to or longer than a preset set time (step S2).
  • the set time can be determined according to the type of film formed in the film forming process, and can be set within a range of 1 hour to 4 hours when forming a TaN film, for example.
  • control unit 9 determines whether or not the film formation start signal is received (step S3).
  • the film forming process is a process of forming a metal film on the wafer W housed in the processing container 1 by an ALD method or a CVD method using an organometallic compound.
  • ALD method there is a process of alternately supplying the organometallic compound gas and the reducing gas with a purge interposed therebetween.
  • the metal that constitutes the organometallic compound include titanium (Ti), tantalum (Ta), and tungsten (W).
  • the reducing gas include nitrogen-containing gas such as ammonia (NH 3 ) gas.
  • the control unit 9 controls the operation of each unit of the processing device 100 to execute the conditioning process (step S5).
  • the conditioning process is a process of forming a film having a predetermined set film thickness in the processing container 1 while the wafer W is not housed in the processing container 1.
  • the set film thickness is, for example, 2 nm or more, and preferably 10 nm or more.
  • the conditioning treatment is preferably performed at the same temperature as the film forming treatment. Accordingly, even when the film forming process is executed immediately after the conditioning process is executed, it is not necessary to change the temperature, and therefore it is possible to shift from the conditioning process to the film forming process in a short time.
  • condition of the conditioning treatment is more preferably the same or substantially the same as the condition of the film forming treatment.
  • substantially the same as the conditions of the film forming process means a process that is different from the film forming process only in the process time, for example, a process that is longer than the film forming process time.
  • the conditioning process includes the supply of the organometallic compound gas and the supply of the reducing gas with the purge interposed. It is preferable that the treatment is alternately repeated. Since the conditioning process is the same as or substantially the same as the film forming process in this way, a process recipe dedicated to the conditioning process is unnecessary, and thus recipe management becomes easy. After the conditioning process ends, the control unit 9 ends the process.
  • the gate valve 12 is opened and the wafer W is transferred into the processing container 1 by the transfer mechanism (not shown), and is transferred to the mounting table 2 at the transfer position. Place it. After retracting the transfer mechanism from the inside of the processing container 1, the gate valve 12 is closed. The wafer W is heated to a predetermined temperature by the heater 21 of the mounting table 2 and the mounting table 2 is raised to the processing position to form the processing space 38. Further, the pressure inside the processing container 1 is adjusted to a predetermined pressure by a pressure control valve (not shown) of the exhaust mechanism 42.
  • the valves 53e and 57e are opened, and the carrier gas (N 2 gas) is supplied from the N 2 gas supply sources 53a and 57a to the gas supply lines 53b and 57b, respectively.
  • the Ta source gas supply source 51a supplies the Ta source gas to the gas supply line 51b
  • the NH 3 gas supply source 55a supplies the NH 3 gas to the gas supply line 55b.
  • the valves 51e and 55e are closed, the Ta source gas and the NH 3 gas are stored in the storage tanks 51d and 55d, respectively, and the pressure inside the storage tanks 51d and 55d is increased.
  • the valve 51e is opened, the Ta source gas stored in the storage tank 51d is supplied into the processing container 1, and is adsorbed on the surface of the wafer W.
  • the valve 51e is closed to stop the supply of the Ta source gas into the processing container 1.
  • the Ta raw material gas remaining in the processing container 1 is discharged to the exhaust pipe 41, and the inside of the processing container 1 is changed from the Ta raw material gas atmosphere to the N 2 gas.
  • the atmosphere is replaced.
  • the valve 51e by closing the valve 51e, the Ta raw material gas supplied from the Ta raw material gas supply source 51a to the gas supply line 51b is stored in the storage tank 51d, and the pressure in the storage tank 51d is increased.
  • valve 55e is opened. As a result, the NH 3 gas stored in the storage tank 55d is supplied into the processing container 1, and the Ta source gas adsorbed on the surface of the wafer W is reduced.
  • the valve 55e is closed to stop the supply of the NH 3 gas into the processing container 1.
  • the NH 3 gas remaining in the processing container 1 is discharged to the exhaust pipe 41, and the inside of the processing container 1 is changed from the NH 3 gas atmosphere to the N 2 gas.
  • the atmosphere is replaced.
  • the valve 55e is closed, NH 3 gas supplied from the NH 3 gas supply source 55a to the gas supply line 55b is stored in the storage tank 55d, boosts the storage tank 55d is.
  • a thin TaN unit film is formed on the surface of the wafer W. Then, the TaN film having a desired film thickness is formed by repeating the above cycle a plurality of times. After that, the wafer W is unloaded from the processing container 1 in the reverse order of the loading procedure into the processing container 1.
  • the mounting table 2 is raised to the processing position to form the processing space 38. Further, the pressure inside the processing container 1 is adjusted to a predetermined pressure by a pressure control valve (not shown) of the exhaust mechanism 42.
  • the valves 53e and 57e are opened, and the carrier gas (N 2 gas) is supplied from the N 2 gas supply sources 53a and 57a to the gas supply lines 53b and 57b, respectively.
  • the Ta source gas supply source 51a supplies the Ta source gas to the gas supply line 51b
  • the NH 3 gas supply source 55a supplies the NH 3 gas to the gas supply line 55b.
  • the valves 51e and 55e are closed, the Ta source gas and the NH 3 gas are stored in the storage tanks 51d and 55d, respectively, and the pressure inside the storage tanks 51d and 55d is increased.
  • the valve 51e is opened, the Ta source gas stored in the storage tank 51d is supplied into the processing container 1, and is adsorbed on the surface inside the processing container 1.
  • the valve 51e is closed to stop the supply of the Ta source gas into the processing container 1.
  • the Ta raw material gas remaining in the processing container 1 is discharged to the exhaust pipe 41, and the inside of the processing container 1 is changed from the Ta raw material gas atmosphere to the N 2 gas.
  • the atmosphere is replaced.
  • the valve 51e by closing the valve 51e, the Ta raw material gas supplied from the Ta raw material gas supply source 51a to the gas supply line 51b is stored in the storage tank 51d, and the pressure in the storage tank 51d is increased.
  • valve 55e is opened. As a result, the NH 3 gas stored in the storage tank 55d is supplied into the processing container 1, and the Ta raw material gas adsorbed on the surface of the processing container 1 is reduced.
  • the valve 55e is closed to stop the supply of the NH 3 gas into the processing container 1.
  • the NH 3 gas remaining in the processing container 1 is discharged to the exhaust pipe 41, and the inside of the processing container 1 is changed from the NH 3 gas atmosphere to the N 2 gas.
  • the atmosphere is replaced.
  • the valve 55e is closed, NH 3 gas supplied from the NH 3 gas supply source 55a to the gas supply line 55b is stored in the storage tank 55d, boosts the storage tank 55d is.
  • the TaN film having the set film thickness is formed by repeating the above cycle a plurality of times.
  • the conditioning process is executed on the processing container 1 when the standby time of the processing device 100 is equal to or longer than the preset time.
  • the gas in the processing container 1 can be replaced, and the environment in the processing container 1 can be adjusted. As a result, the reproducibility of the film forming process can be improved.
  • FIG. 3 is a diagram showing an example of the relationship between the waiting time and the in-plane variation of the TaN film thickness.
  • the standby time [h] is shown on the horizontal axis
  • the in-plane variation ⁇ / average [%] of the TaN film thickness is shown on the vertical axis.
  • the in-plane variation ⁇ of the film thickness of the TaN film / average is kept as low as about 2 to 3%, but the waiting time is In the case of 7 hours or more, the in-plane variation ⁇ of the film thickness of the TaN film / average is as high as about 10%.
  • the film thickness abnormality caused by such a long standby time may occur in a metal film other than the TaN film.
  • the conditioning process is performed on the processing container 1 when the standby time of the processing apparatus 100 is equal to or longer than the preset set time, so the processing apparatus 100 is in the standby state. It is possible to prevent the occurrence of the film thickness abnormality due to this. As a result, the in-plane variation of the film thickness can be suppressed low. Further, since the downtime of the processing device 100 is reduced, the device operating rate is improved.
  • FIG. 4 is an explanatory diagram of an effect of the processing method according to the embodiment.
  • the number of operating days [days] is shown on the horizontal axis
  • the in-plane variation ⁇ / average [%] of the TaN film thickness is shown on the vertical axis.
  • the number of operating days when the apparatus is started up is 0, and the processing apparatus is in a standby state during a period in which a diamond mark is not shown.
  • the number of working days is 20, 90, 120, 185 and 254 days (see the alternate long and short dash line in FIG. 4), dry cleaning using ClF 3 gas and a film thickness of 500 nm or more are performed.
  • the precoat film of was formed.
  • the period in which the number of working days is 0 to 120 days is the operation period in which the conditioning process is not executed even when the standby time is equal to or longer than the preset set time.
  • the operation period was set to execute the conditioning process when the waiting time was 1 hour or more.
  • the condition of the conditioning process was substantially the same as the condition of the film forming process, and only the process time was changed to form a TaN film with a film thickness of 10 nm in the processing container 1.
  • the in-plane variation in the film thickness of the TaN film was 5% or less immediately after the device was started up.
  • the in-plane variation of the film thickness of the TaN film deteriorated to 5 to 30% as the number of operating days increased.
  • dry cleaning using ClF 3 gas and film formation of a precoat film having a film thickness of 500 nm or more are performed after the in-plane variation is aggravated, immediately after that, the in-plane variation of the TaN film thickness is 5 % Recovered.
  • the in-plane variation of the film thickness of the TaN film worsened as the number of operating days increased.
  • TaN was used even after the number of operating days increased after dry cleaning using ClF 3 gas and deposition of a precoat film with a thickness of 500 nm or more.
  • the in-plane variation of the film thickness was about 5% and was stable with almost no fluctuation.
  • a single wafer processing apparatus that processes wafers one by one has been described as an example, but the present invention is not limited to this.
  • it may be a batch type apparatus that processes a plurality of wafers at a time.
  • the semiconductor wafer is described as an example of the substrate, but the semiconductor wafer may be a silicon wafer or a compound semiconductor wafer of GaAs, SiC, GaN or the like.
  • the substrate is not limited to a semiconductor wafer, and may be a glass substrate used for an FPD (flat panel display) such as a liquid crystal display device or a ceramic substrate.
  • FPD flat panel display

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Ce procédé de traitement, selon un mode de réalisation de la présente invention, est un procédé destiné à un dispositif de traitement qui effectue un traitement de formation de film destiné à former un film métallique sur un substrat disposé dans un récipient de traitement par un procédé ALD ou un procédé CVD, de tels procédés utilisant un composé organométallique. Le procédé de traitement comprend : une étape consistant à déterminer si la durée de veille du dispositif de traitement est au moins égale à une durée de consigne qui a été prédéfinie ; et une étape consistant à effectuer un traitement de conditionnement sur le récipient de traitement si la durée de veille est au moins égale à la durée de consigne.
PCT/JP2019/043619 2018-11-21 2019-11-07 Procédé de traitement et dispositif de traitement WO2020105444A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-218603 2018-11-21
JP2018218603A JP2020084253A (ja) 2018-11-21 2018-11-21 処理方法及び処理装置

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Publication Number Publication Date
WO2020105444A1 true WO2020105444A1 (fr) 2020-05-28

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Publication number Priority date Publication date Assignee Title
JP7112768B2 (ja) 2020-12-23 2022-08-04 株式会社クリエイティブコーティングス 金属膜のａｌｄ装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165479A (ja) * 2005-12-12 2007-06-28 Tokyo Electron Ltd 成膜装置のプリコート方法、成膜装置及び記憶媒体
WO2009119627A1 (fr) * 2008-03-28 2009-10-01 東京エレクトロン株式会社 Procédé de dépôt de film métallique et milieu à mémoire
WO2010061603A1 (fr) * 2008-11-28 2010-06-03 キヤノンアネルバ株式会社 Appareil de formation de film et procédé de fabrication d'un dispositif électronique
JP2018024927A (ja) * 2016-08-12 2018-02-15 東京エレクトロン株式会社 成膜装置、およびそれに用いるガス吐出部材

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165479A (ja) * 2005-12-12 2007-06-28 Tokyo Electron Ltd 成膜装置のプリコート方法、成膜装置及び記憶媒体
WO2009119627A1 (fr) * 2008-03-28 2009-10-01 東京エレクトロン株式会社 Procédé de dépôt de film métallique et milieu à mémoire
WO2010061603A1 (fr) * 2008-11-28 2010-06-03 キヤノンアネルバ株式会社 Appareil de formation de film et procédé de fabrication d'un dispositif électronique
JP2018024927A (ja) * 2016-08-12 2018-02-15 東京エレクトロン株式会社 成膜装置、およびそれに用いるガス吐出部材

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