WO2020102965A1 - Transducteur ultrasonore et dispositif électronique - Google Patents

Transducteur ultrasonore et dispositif électronique

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Publication number
WO2020102965A1
WO2020102965A1 PCT/CN2018/116369 CN2018116369W WO2020102965A1 WO 2020102965 A1 WO2020102965 A1 WO 2020102965A1 CN 2018116369 W CN2018116369 W CN 2018116369W WO 2020102965 A1 WO2020102965 A1 WO 2020102965A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ultrasonic
ultrasonic transducer
electrode
electrode layer
Prior art date
Application number
PCT/CN2018/116369
Other languages
English (en)
Chinese (zh)
Inventor
王红超
沈健
李运宁
Original Assignee
深圳市汇顶科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to CN201880002299.0A priority Critical patent/CN109643378B/zh
Priority to PCT/CN2018/116369 priority patent/WO2020102965A1/fr
Publication of WO2020102965A1 publication Critical patent/WO2020102965A1/fr

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/40—Spoof detection, e.g. liveness detection
    • G06V40/45—Detection of the body part being alive
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/18—Methods or devices for transmitting, conducting or directing sound
    • G10K11/26—Sound-focusing or directing, e.g. scanning
    • G10K11/28—Sound-focusing or directing, e.g. scanning using reflection, e.g. parabolic reflectors
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
    • G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
    • G10K9/122—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using piezoelectric driving means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure

Definitions

  • the present application relates to the field of ultrasonic imaging technology, and in particular to an ultrasonic transducer and electronic device.
  • CMUT micromachined ultrasonic transducer
  • the CMUT usually includes a substrate, a lower electrode, an etched sacrificial layer, a support layer, a diaphragm layer, and an upper electrode that are arranged in sequence, and then achieves independent control of the array elements of the ultrasonic transducer device by array control of the lower electrode.
  • a DC voltage is applied between the upper electrode and the lower electrode
  • the strong electrostatic field pulls the diaphragm layer toward the substrate
  • an AC voltage is applied between the upper electrode and the lower electrode.
  • the diaphragm layer vibrates under the action of ultrasonic waves, and the capacitance between the two electrode plates changes.
  • the ultrasonic waves are received, that is, the transmission and reception of ultrasonic waves are caused by The lower electrode, the diaphragm layer and the upper electrode are completed together.
  • the ultrasonic wave is emitted by vibrating the diaphragm layer to generate ultrasonic waves.
  • the transmitting ability is often poor, which greatly reduces the performance of the ultrasonic transducer device.
  • the present application provides an ultrasonic transducing device and an electronic device, which realizes the purpose that the ultrasonic transducing device has a strong ultrasonic emission capability, and solves the problem that the performance of the ultrasonic transducing device is reduced due to the poor ultrasonic emission capability of the existing CMUT problem
  • the present application provides an ultrasonic transducer device, including: a sensing medium layer, an ultrasonic receiving layer capable of receiving ultrasonic waves, and an ultrasonic emitting layer capable of transmitting ultrasonic waves, wherein the ultrasonic emitting layer and the ultrasonic receiving layer
  • the stack is disposed under the sensing medium layer.
  • the ultrasonic emission layer includes a first electrode layer, a piezoelectric layer, and a second electrode layer, wherein the first electrode layer and the second electrode layer respectively cover the The upper and lower surfaces of the piezoelectric layer, the piezoelectric layer is used to emit ultrasonic waves on the entire surface when an alternating voltage is applied between the first electrode layer and the second electrode layer.
  • the piezoelectric layer is a film layer made of any of the following materials:
  • Piezoelectric ceramics piezoelectric single crystals or piezoelectric polymer materials
  • the first electrode layer and the second electrode layer are film layers made of any one of aluminum, copper, silver, and nickel.
  • the projection areas of the first electrode layer and the second electrode layer on the piezoelectric layer respectively completely overlap the front and back sides of the piezoelectric layer.
  • it further includes: a backing, and the ultrasonic wave emitting layer and the ultrasonic wave receiving layer are stacked between the backing and the sensing medium layer.
  • the ultrasonic emitting layer is located between the ultrasonic receiving layer and the backing, or,
  • the ultrasonic emission layer is located between the sensing medium layer and the ultrasonic reception layer.
  • the ultrasonic receiving layer is composed of a transducer having at least one vibrating element, and the transducer is any one of the following transducers:
  • CMUT Capacitive micromachined ultrasonic transducer
  • PMUT piezoelectric micromachined ultrasonic transducer
  • piezoelectric polymer ultrasonic transducer CMUT
  • CMUT piezoelectric micromachined ultrasonic transducer
  • PMUT piezoelectric polymer ultrasonic transducer
  • the vibrator includes a plurality of third electrode layers provided on the substrate and isolated from each other, a diaphragm layer, and a fourth electrode layer provided on the diaphragm layer , Wherein a cavity is formed between each third electrode and the diaphragm layer, and adjacent cavities are isolated from each other.
  • the ultrasonic wave receiving layer further includes: a substrate, wherein the substrate is provided with a plurality of grooves for mounting the third electrode layer;
  • a plurality of spacers are provided on the substrate, and the spacers divide the gap between the substrate and the diaphragm layer into a plurality of cavities corresponding one-to-one with the third electrode layer .
  • the spacer is integrally formed with the substrate, or the spacer is provided on the substrate by bonding.
  • a control circuit is further provided on the substrate, wherein the control circuit is electrically connected to the third electrode layer.
  • the projection area of the fourth electrode layer on the diaphragm layer completely covers the diaphragm layer, or the fourth electrode layer is a plurality of separated from each other An electrode layer corresponding to the third electrode layer.
  • the material of the diaphragm layer is polysilicon or silicon nitride
  • the third electrode layer and the fourth electrode layer are made of any one of aluminum, copper, silver, and nickel.
  • it further includes: a transition layer, wherein the transition layer is located between the sensing medium layer and the ultrasonic wave receiving layer, or between the sensing medium layer and the Between ultrasonic emission layers.
  • the sensing medium layer is a screen, glass, or metal layer.
  • it further includes: an adhesive layer covering the connection of each film layer on the outer surface of the ultrasonic transducer.
  • the present application provides an electronic device, comprising: any one of the ultrasonic transducer devices described above, and the electronic device has an ultrasonic scanning area corresponding to the ultrasonic transducer device.
  • the ultrasound scan area is located in the display area of the display screen of the electronic device or in the non-display area of the electronic device.
  • the shape of the ultrasound scanning area is a circle, a square, an ellipse, or an irregular figure.
  • the ultrasonic transducing device and the electronic device provided by this application through the separation of the ultrasonic transmitting layer and the ultrasonic receiving layer, so that the ultrasonic transmitting layer and the ultrasonic receiving layer do not need to take into account the dual purpose of transmitting and receiving at the same time when choosing materials, the stronger transmitting ability is selected Piezoelectric materials and materials with better receiving effect, that is, the ultrasonic emission layer can use piezoelectric materials with larger amplitude under the action of voltage, so that the ultrasonic emission layer has a stronger ultrasonic emission capability and a larger action distance, making the ultrasonic transducing device Compared with the prior art, it avoids the problem of poor ultrasonic transmission ability caused by the selection of materials with smaller amplitude.
  • the ultrasonic receiving layer may use the same material as the diaphragm layer in the prior art. Therefore, the ultrasonic transducing device provided in this embodiment realizes that the ultrasonic transducing device has a strong ultrasonic transmitting capability and better reception The purpose of the effect is to make the working performance of the ultrasonic transducer better, thereby solving the problem that the existing ultrasonic transducer has poor ultrasonic emission capability and affects the performance of the ultrasonic transducer.
  • FIG. 1 is a schematic cross-sectional structural diagram of an ultrasound transducer device provided in Embodiment 1 of the present application;
  • FIG. 2 is a schematic diagram of a cross-sectional structure of each layer in the ultrasonic transducer device provided in Embodiment 1 of the present application;
  • FIG. 3 is a schematic diagram of the arrangement of the vibrating elements in the ultrasonic receiving layer in the ultrasonic transducing device provided in Embodiment 1 of the present application;
  • FIG. 4 is a schematic structural diagram of a cross-sectional structure of each layer in an ultrasonic transducer device provided in Embodiment 2 of the present application;
  • FIG. 5 is a schematic structural diagram of an electronic device provided in Embodiment 3 of the present application.
  • Capacitive micromachined ultrasonic transducer is a micro-electromechanical device that utilizes the mutual conversion of acoustic energy and electrical energy. It has the advantages of high integration, good sensitivity, and wide receiving bandwidth. It is used to make ultrasonic transducers. Ideal device.
  • the CMUT can convert ultrasonic waves into electrical signals and electrical signals into ultrasonic waves. When a DC voltage is applied between the upper electrode and the lower electrode, the strong electrostatic field pulls the diaphragm layer toward the substrate, and then an AC voltage is applied between the upper electrode and the lower electrode. At this time, the diaphragm layer will vibrate. Generate ultrasonic waves. On the contrary, after applying an appropriate DC bias voltage between the upper electrode and the lower electrode, the diaphragm layer vibrates under the action of ultrasonic waves, and the capacitance between the two electrode plates changes. By detecting this change, ultrasonic waves are received.
  • the existing ultrasonic transducer has a problem of poor ultrasonic emission capability.
  • the reason for this problem is that the existing ultrasonic transducer applies a DC voltage between the upper electrode and the lower electrode.
  • the AC voltage causes the diaphragm layer to vibrate to generate ultrasonic waves and emit.
  • the diaphragm layer vibrates under the action of ultrasonic waves, and the capacitance between the two electrode plates changes.
  • the diaphragm layer takes into account the dual role of transmitting and receiving ultrasonic waves at the same time, so the diaphragm layer is often made of polysilicon or silicon nitride material, and the reflected resonance frequency of ultrasonic waves is proportional to the thickness of the film layer.
  • the accuracy of image recognition and the frequency of ultrasonic transmission are generally in the range of 10Mhz ⁇ 25MHz. In order to obtain the corresponding thickness of the diaphragm at this frequency, the CMUT needs to be very thick, and at the same time the diameter is small.
  • the voltage that can be allocated to the CMUT device is generally low, which ultimately causes the amplitude of the diaphragm to be small and thus reduces the ability to emit ultrasonic waves.
  • the diaphragm layer is made of a material with a larger amplitude, the diaphragm The ability of the layer to receive sound waves is greatly reduced.
  • the present application provides an ultrasonic transducing device.
  • the following describes in detail the technical solutions of the present application and how the technical solutions of the present application solve the above technical problems in specific embodiments.
  • the following specific embodiments may be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.
  • the embodiments of the present application will be described below with reference to the drawings.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of an ultrasonic transducer device provided by Example 1 of the present application
  • FIG. 2 is a schematic diagram of a cross-sectional structure of each layer in the ultrasonic transducer device provided by Example 1 of the present application
  • FIG. 3 is provided by Example 1 of the present application Schematic diagram of the arrangement of the vibrating elements in the ultrasonic receiving layer in the ultrasonic transducer device.
  • the ultrasonic transducing device provided in this embodiment can be applied in the field of fingerprint identification, and is used to implement functions such as authorized booting, admission, and credit payment for the current user.
  • the ultrasonic transducing device includes: a sensing medium layer 40, an ultrasonic receiving layer 20 capable of receiving ultrasonic waves, and an ultrasonic emitting layer 10 capable of transmitting ultrasonic waves, wherein the ultrasonic emitting layer 10 and the ultrasonic receiving layer 20 are laminated It is disposed under the sensing medium layer 40, that is, the sensing medium layer 40 is located at the top layer of the ultrasonic transducer device, and the sensing medium layer 40 is the outer surface of the ultrasonic transducer device for sensing characteristic biological information such as fingerprints, etc.
  • the sensing medium layer 40 may be specifically composed of a material such as a screen, glass, or metal plating.
  • the ultrasound emitting layer 10 and the ultrasound receiving layer 20 are located below the sensing medium layer 40, and the ultrasound emitting layer 10 and the ultrasound receiving layer 20
  • the ultrasonic receiving layer 20 may be located between the ultrasonic emitting layer 10 and the sensing medium layer 40 (refer to FIG. 1), or the ultrasonic emitting layer 10 is located between the ultrasonic receiving layer 20 and the sensing medium layer 40
  • the ultrasonic wave transmitting layer 10 is used to generate ultrasonic waves and emitted outward
  • the ultrasonic wave receiving layer 20 is used to receive the returned ultrasonic waves.
  • the ultrasonic wave receiving layer 20 is used to receive the ultrasonic waves emitted by the ultrasonic wave transmitting layer 10 The echo returned by the skin reflection, so that the control unit images the skin characteristics according to the echo signal received by the ultrasound receiving layer 20, and compares it with the image information stored in the terminal to realize the biometric function.
  • the ultrasonic wave transmitting layer 10 may be responsible for transmitting ultrasonic waves
  • the ultrasonic wave receiving layer 20 may be responsible for receiving The returned ultrasonic wave, so that the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 do not need to take into account the dual purpose of transmitting and receiving at the same time, and can choose materials with stronger transmitting ability and materials with better receiving effect, for example, the ultrasonic transmitting layer 10
  • a material with a large amplitude under the action of a voltage, such as a piezoelectric material can be selected, so that the ultrasonic emission layer 10 has a strong ultrasonic emission capability and a large action distance, so that the performance of the ultrasonic transduction device is better, compared with the prior art ,
  • the ultrasonic receiving layer 20 can be selected as The materials of the diaphragm layer in the prior art are the same. Therefore, the ultrasonic transducer device provided in this embodiment achieves the purpose of the ultrasonic transducer device having a strong ultrasonic transmission capability and a good receiving effect, so that the ultrasonic transducer device Has better working performance, thereby solving the problem that the existing ultrasonic transducer has poor ultrasonic emission capability and affects the performance of the ultrasonic transducer.
  • the ultrasonic emission layer 10 includes a first electrode layer 11, a piezoelectric layer 13 and a second electrode layer 12, wherein the first electrode layer 11 and the second electrode layer 12 respectively cover the front and back surfaces of the piezoelectric layer 13, the piezoelectric layer 13 is used to emit ultrasonic waves on the entire surface when an alternating voltage is applied between the first electrode layer 11 and the second electrode layer 12, ie
  • the ultrasonic emission layer 10 is specifically composed of the first electrode layer 11, the piezoelectric layer 13 and the second electrode layer 12.
  • the piezoelectric The entire surface of the layer 13 emits ultrasonic waves.
  • the piezoelectric layer 13 uses a piezoelectric material, the vibration amplitude of the piezoelectric layer 13 is large under the action of an alternating voltage, so the ability to transmit ultrasonic waves is strong, which is similar to the diaphragm layer in the prior art.
  • the piezoelectric layer 13 in the ultrasonic emission layer 10 can generate a constant pulsed acoustic wave under the action of a voltage, and the emission capability is relatively strong.
  • the frequency of the pulsed acoustic wave generated by the ultrasonic emission layer 10 It is determined by the applied electric field, and the characteristic wavelength range for biometrics is 15-25MHz.
  • the piezoelectric layer 13 uses the entire surface of the piezoelectric material, so the emission is an ultrasonic surface wave with a narrow bandwidth.
  • the pressure The thickness of the electrical material determines its resonance frequency.
  • the thickness of the piezoelectric layer 13 may be 100 ⁇ m.
  • the piezoelectric layer 13 is a film layer made of piezoelectric ceramic, piezoelectric single crystal, or piezoelectric polymer material, that is, the piezoelectric layer 13 may use piezoelectric ceramic, or the piezoelectric layer 13 may also It may be made of piezoelectric single crystal material, or the piezoelectric layer 13 may also be made of piezoelectric polymer material, wherein.
  • Piezoelectric ceramics have strong emission capabilities, but due to the poor acoustic impedance matching between piezoelectric ceramics and air, the broadband of acoustic waves received by piezoelectric ceramics is narrow, which affects the reception capability of piezoelectric ceramics.
  • the diaphragm is often not selected from piezoelectric ceramics or other piezoelectric materials.
  • the ultrasonic transmitting layer 10 The piezoelectric layer 13 may be piezoelectric ceramics, which greatly enhances the ultrasonic emission capability of the ultrasonic emission layer 10.
  • the first electrode layer 11 and the second electrode layer 12 are metal conductive layers made of any material of aluminum, copper, silver, and nickel.
  • the projection areas of the first electrode layer 11 and the second electrode layer 12 on the piezoelectric layer 13 are respectively different from the piezoelectric layer 13
  • the two sides of the front and back completely overlap, that is, the first electrode layer 11 and the second electrode layer 12 are the same full-surface electrode as the front and back sides of the piezoelectric layer 13, so that when the first electrode layer 11 and the second electrode layer 12 When an alternating electric field is applied, a constant pulse sound wave can be generated on the entire surface of the piezoelectric layer 13.
  • referring to FIG. 2 further includes: a backing 50, which is the bottom layer of the ultrasonic transducer, and the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 are stacked on the backing 50 and the sensing medium Between the layers 40, in this embodiment, the backing 50 is used to absorb the ultrasonic waves propagating downward.
  • the backing 50 may specifically use a damping material, and at the same time, the backing 50 also plays a role of heat conduction, so the backing 50 may also be used.
  • Stainless steel metal back plate is the bottom layer of the ultrasonic transducer, and the ultrasonic transmitting layer 10 and the ultrasonic receiving layer 20 are stacked on the backing 50 and the sensing medium Between the layers 40, in this embodiment, the backing 50 is used to absorb the ultrasonic waves propagating downward.
  • the backing 50 may specifically use a damping material, and at the same time, the backing 50 also plays a role of heat conduction, so the backing 50 may also be used.
  • Stainless steel metal back plate is the bottom layer of
  • the ultrasonic emission layer 10 is located between the ultrasonic receiving layer 20 and the backing 50, or the ultrasonic emission layer 10 is located between the sensing medium layer 40 and the ultrasonic receiving layer 20 (refer to As shown in FIG. 4), when the ultrasonic emitting layer 10 is located between the sensing medium layer 40 and the ultrasonic receiving layer 20, the backing 50 is located on the bottom layer of the ultrasonic receiving layer 20 at this time.
  • the ultrasonic receiving layer 20 is composed of a transducer having at least one vibrating element 21, and the transducer is a capacitive micromachined ultrasonic transducer (CMUT), piezoelectric micromachined An ultrasonic transducer (PMUT) or a piezoelectric polymer ultrasonic transducer, wherein, in this embodiment, referring to FIG.
  • the number of the vibrating elements 21 is multiple, and the multiple vibrating elements 21 are arranged according to a predetermined pattern
  • the two-dimensional array is formed into an ultrasonic receiving layer 20, in which multiple vibrating elements 21 are independent of each other, so that the received beam can be focused, wherein the isolation between the vibrating elements 21 is through the array of the lower electrode or the upper electrode
  • the separation between the vibrating elements 21 may be a physical division such as the spacer 22, and the material of the spacer may be a material with a large acoustic impedance to reduce mutual interference between the vibrating elements 21.
  • the vibrating element 21 includes a plurality of third electrode layers 213, a diaphragm layer 211, and a fourth electrode layer 214 disposed on the diaphragm layer 211, which are provided on the substrate 23 and separated from each other.
  • a cavity 215 is formed between each third electrode and the diaphragm layer 211, and adjacent cavities 215 are isolated from each other. As shown in FIG.
  • the third electrode layers 213 are separated from each other, and each third electrode layer 213 Corresponding to a cavity 215, and the cavity 215 is specifically a vacuum cavity, which can reduce the acoustic impedance at the cavity 215, wherein the cavity 215 is isolated from each other, wherein the fourth electrode layer 214 is in the diaphragm layer 211
  • the projection area on the top completely covers the diaphragm layer 211, that is, the fourth electrode layer 214 is a whole electrode, or the fourth electrode layer 214 may also be a plurality of electrodes separated from each other, used to independently control the diaphragm of each vibrator 21
  • the vibrating element 21 is composed of the third electrode layer 213, the diaphragm layer 211, the fourth electrode layer 214, and the cavity 215, when the third electrode layer 213 and the fourth electrode layer 214 When an alternating voltage is added between them, under the action of electrostatic force, the diaphragm layer 211 will vibrate and emit a sine wave.
  • the diaphragm layer 211 When the reflected sound wave / echo reaches the surface of the vibrator element 21, the diaphragm layer 211 will cause the diaphragm layer. 211 Regular vibration, the vibration will be converted into the change of voltage / potential between the upper and lower electrodes. According to the change of voltage / potential, the imaging of skin characteristics is obtained, and the image information stored in the terminal is compared to realize the function of biometric recognition.
  • the width of the cavity 215 may be smaller than the width of the third electrode layer 213, or the width of the cavity 215 may be equal to the width of the third electrode layer 213, or the width of the cavity 215 may also be greater than the third electrode The width of layer 213.
  • the specific process is as follows: First, an alternating electric field is applied between the first electrode layer 11 and the second electrode layer 12 to generate a constant pulsed sound wave 101.
  • the ultrasonic beam reaches the stack In the cavity 215 structure in the layer, strong reflection occurs due to the mismatch of acoustic impedance.
  • the acoustic wave can normally pass through the side wall of the cavity 215 to form the focused beam 102.
  • a characteristic reflection is formed at the interface, and a biological structure 104 with a characteristic structure, such as a finger skin, here takes a fingerprint as an example.
  • the convex part is regarded as the ridge 106, and the concave part is regarded as the valley 105.
  • the reflected beam 103 is generated due to the large air acoustic impedance, and when the sound wave reaches the position of the fingerprint ridge 106, the transmission of the sound wave occurs due to the low acoustic impedance of the skin.
  • the reflected beam When 103 reaches the diaphragm layer 211, the diaphragm layer 211 vibrates regularly, and the vibration of the diaphragm layer 211 causes the voltage / potential between the third electrode layer 213 and the fourth electrode layer 214 to change, depending on the detected voltage / potential Changes are imaging the skin characteristics. Therefore, in this embodiment, the strength of the echo signal of the ultrasonic wave on the skin surface is used to form an echo image, so that the characteristic information of the skin surface can be completely reflected. Finally, by comparing the skin surface feature information with pre-stored skin feature information, the purpose of biometric identification is achieved.
  • the material of the diaphragm layer 211 may be polysilicon or silicon nitride, such as Si 3 N 4 , and the third electrode layer 213 and the fourth electrode layer 214 are made of aluminum, copper, silver, nickel Any one of the materials is made into a film layer.
  • the ultrasonic receiving layer 20 further includes: a substrate 23, wherein the substrate 23 may specifically be a single crystal silicon material, and the substrate 23 is provided with a plurality of grooves for mounting the third electrode layer 213 That is, in this embodiment, a plurality of third electrode layers 213 are installed in the grooves formed on the substrate 23.
  • a plurality of spacers 212 are provided on the substrate 23, and the spacer 212 separates the gap between the substrate 23 and the diaphragm layer 211 into a plurality of The electrode layers 213 correspond to the cavities 215 one by one.
  • the spacer 22 between the spacer 212 on the substrate 23 and the vibrating element 21 may be the same component, that is, the vibrating element 21 may pass through
  • the spacer 212 is used for isolation.
  • the spacer 212 and the substrate 23 may be integrally formed.
  • a groove is formed in the substrate 23 by engraving, and a part of the space in the groove is used for placing the third electrode layer 213
  • the other part of the space is a cavity 215, or the spacer 212 is provided on the substrate 23 by bonding, that is, the spacer 212 is a metal fence structure added by a semiconductor process, wherein the spacer 212 is provided on the substrate by bonding
  • the spacer 212 is specifically a bonding material, such as a eutectic bonding structure of Al and Ge.
  • the substrate 23 is not limited to the structure shown in FIG. 2.
  • the substrate 23 is also provided with other control circuits responsible for calculation or signal processing.
  • the control circuit is electrically connected to the third electrode layer 213. Realize signal reading and processing.
  • the material and size of the vibrator element 21 may be but not limited to the following combination: the diameter of the vibrator element 21 may be 25um, and the fourth electrode layer
  • the thickness of 214 may be 0.5um
  • the thickness of diaphragm layer 211 Si 3 N 4
  • the size of cavity 215 is 0.5um
  • the thickness of third electrode layer 213 is 0.5um
  • the thickness of substrate 23 It can be 100um.
  • the transition layer 30 further includes: a transition layer 30, wherein, as shown in FIG. 2, the transition layer 30 is located between the sensing medium layer 40 and the ultrasonic receiving layer 20, or as shown in FIG. 4, the transition layer 30 is located Between the sensing medium layer 40 and the ultrasonic emission layer 10, the transition layer 30 is specifically made of an acoustic transition layer 30 material.
  • the transition layer 30 is used to reduce the acoustic impedance of sound wave introduction.
  • the material of the transition layer 30 may be a layer of material, or It may be a multi-layer material that plays the role of acoustic matching and adhesive layer, such as a composite laminate material of epoxy adhesive layer and SiO 2 .
  • this embodiment also includes: an adhesive layer (not shown), the adhesive layer covers the junction of each film layer on the outer surface of the ultrasonic transducer device, that is, the adhesive layer covers the film layer on the side of the ultrasonic transducer device Adhesive fixing at the connection makes it difficult to peel off the boundary of each film layer in the ultrasonic transducer, thereby improving the stability of the ultrasonic transducer.
  • FIG. 4 is a schematic structural diagram of a cross-sectional structure of each layer in an ultrasonic transducer device provided in Embodiment 2 of the present application.
  • the ultrasonic emission layer 10 is located between the sensing medium layer 40 and the ultrasonic reception layer 20
  • the ultrasonic reception layer 20 is located between the backing 50 and the ultrasonic emission layer 10
  • the transition layer 30 is located between the sensing medium layer 40 and the ultrasonic emission layer 10.
  • the working distance of the ultrasonic transducer device provided in this embodiment is specifically as follows: First, an alternating electric field is applied between the first electrode layer 11 and the second electrode layer 12 to generate a constant pulsed sound wave 101. When the sound wave reaches the valley of the fingerprint At the 105 position, a reflected beam is generated due to the large acoustic impedance of the air, and when the sound wave reaches the position of the fingerprint ridge 106, the transmission of the acoustic wave occurs due to the low skin acoustic impedance.
  • the diaphragm layer 211 vibrates regularly, and the vibration of the diaphragm layer 211 will cause the voltage / potential between the third electrode layer 213 and the fourth electrode layer 214 to change.
  • the skin characteristics are imaged according to the detected voltage / potential change. Therefore, In this embodiment, the strength of the echo signal of the ultrasonic wave on the skin surface is used to form an echo image, so that the characteristic information of the skin surface can be completely reflected.
  • the purpose of biometric identification is achieved.
  • the second electrode layer 12 and the fourth electrode layer 214 may share an electrode layer, and this electrode layer may be grounded , Which reduces the arrangement of the electrode layer.
  • FIG. 5 is a schematic structural diagram of an electronic device provided in Embodiment 3 of the present application.
  • the electronic device 100 includes the ultrasonic transducing device of any of the above embodiments, wherein the electronic device 100 may be any device requiring feature recognition needs, such as a tablet computer, a notebook, or a mobile phone Or an access control system, etc., in this embodiment, the electronic device 100 has an ultrasonic scanning area 120 corresponding to the ultrasonic transducer.
  • the sensing medium layer 40 of the ultrasonic transducer is located in the ultrasonic scanning area 120 or directly It is exposed at the ultrasound scanning area 120.
  • the user's finger can be placed on the ultrasound scanning area 120 to be recognized by the ultrasound transducer.
  • the electronic device 100 provided in this embodiment, because the ultrasonic transducing device includes an independent ultrasonic transmitting layer 10 and an ultrasonic receiving layer 20, this makes the ultrasonic transducing device have a strong ultrasonic transmitting capability and good ultrasonic receiving The capability makes the performance of the ultrasonic transducing device better, which makes the recognition accuracy and precision of the electronic device 100 higher.
  • the electronic device 100 provided in this embodiment may specifically have a display screen 110 for display.
  • the ultrasound scanning area 120 is located on the display area of the display screen 110 of the electronic device 100.
  • the ultrasound transducer device may Set below the display screen 110 of the electronic device 100, so that the user can directly input fingerprints in the display area of the display screen 110; or, the ultrasound scanning area 120 is located on the non-display area of the electronic device 100, such as the frame of the electronic device 100 Above, the ultrasound scanning area 120 is an independent button area.
  • the shape of the ultrasound scanning area 120 may be, but not limited to, a circle, a square, an ellipse, or an irregular figure.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or can be through the middle
  • the media is indirectly connected, which can be the connection between two components or the interaction between the two components.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Human Computer Interaction (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Vascular Medicine (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

L'invention concerne un transducteur ultrasonore et un dispositif électronique, le transducteur ultrasonore comprenant : une couche diélectrique de détection (40), une couche de réception ultrasonore (20) capable de recevoir des ondes ultrasonores et une couche d'émission ultrasonore (10) capable d'émettre des ondes ultrasonores, la couche d'émission ultrasonore (10) et la couche de réception ultrasonore (20) étant empilées sous la couche diélectrique de détection (40), de telle sorte que le transducteur ultrasonore a une capacité d'émission ultrasonore plus forte et un meilleur effet de réception, ce qui permet de résoudre le problème selon lequel une faible capacité de génération d'ultrasons affecte la performance dans des transducteurs ultrasonores existants.
PCT/CN2018/116369 2018-11-20 2018-11-20 Transducteur ultrasonore et dispositif électronique WO2020102965A1 (fr)

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