WO2020082256A1 - Transducteur ultrasonore et son procédé de fabrication - Google Patents

Transducteur ultrasonore et son procédé de fabrication Download PDF

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Publication number
WO2020082256A1
WO2020082256A1 PCT/CN2018/111580 CN2018111580W WO2020082256A1 WO 2020082256 A1 WO2020082256 A1 WO 2020082256A1 CN 2018111580 W CN2018111580 W CN 2018111580W WO 2020082256 A1 WO2020082256 A1 WO 2020082256A1
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WO
WIPO (PCT)
Prior art keywords
layer
ultrasonic transducer
upper electrode
substrate
groove
Prior art date
Application number
PCT/CN2018/111580
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English (en)
Chinese (zh)
Inventor
王红超
沈健
李运宁
Original Assignee
深圳市汇顶科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to PCT/CN2018/111580 priority Critical patent/WO2020082256A1/fr
Priority to CN201880002105.7A priority patent/CN109561876A/zh
Publication of WO2020082256A1 publication Critical patent/WO2020082256A1/fr

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
    • G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
    • G10K9/122—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using piezoelectric driving means

Definitions

  • the present application relates to the field of ultrasound imaging technology, and in particular, to an ultrasound transducer and a method of manufacturing the same.
  • CMUT micromachined ultrasonic transducer
  • Ultrasonic transducing devices usually include a flexible substrate, a lower electrode, an etched sacrificial layer, an organic polymer support layer, an organic polymer vibrating film, and an upper electrode, which are then arranged by array control of the upper electrode Independent control of ultrasonic transducer array elements.
  • this method requires connecting the upper electrode and the integrated circuit on the wafer through external leads.
  • the number of upper electrodes is large, the number of leads will increase accordingly; thereby increasing the number of external leads and the difficulty of wiring.
  • the number of external leads is large, it will also cause inconvenience to the transmission and reception control of the ultrasonic transducer array element.
  • the invention provides an ultrasonic transducer and a manufacturing method thereof, which realizes the arraying of lower electrodes, thereby making the lead wire method simpler, and facilitating independent control of the transmission and reception of the ultrasonic transducer array element.
  • the present invention provides an ultrasonic transducer, including: a substrate, a lower electrode, a support block, a diaphragm layer, and an upper electrode stacked in this order; wherein, a side of the substrate close to the diaphragm layer A groove is provided, and the lower electrode is filled in the groove; the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity and the The position of the lower electrode corresponds.
  • the upper electrode is a conductive layer deposited on the diaphragm layer, and the thickness of the conductive layer is 0.6 ⁇ m; the material of the conductive layer includes any one of aluminum, copper, and silver.
  • the material of the diaphragm layer includes: nitride or oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • the number of the grooves is 2 or more, and each groove is filled with a lower electrode.
  • the number of the cavities is 2 or more, and each cavity corresponds to the position of at least one lower electrode.
  • the material of the lower electrode includes any one of aluminum, copper, and silver.
  • the substrate is a silicon wafer
  • a control circuit is provided on the silicon wafer, the control circuit is electrically connected to the lower electrode, and the upper electrode is grounded.
  • an embodiment of the present invention provides a method for manufacturing an ultrasonic transducer, for manufacturing the ultrasonic transducer according to any one of the first aspect; the method includes:
  • the first substrate is removed to obtain the ultrasonic transducer.
  • the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  • depositing a diaphragm layer on the upper electrode includes:
  • a silicon nitride layer with a predetermined thickness is deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
  • forming a groove on the first surface of the second substrate includes:
  • Multiple grooves are formed on the first surface of the second substrate through photolithography and etching processes.
  • filling the lower electrode in the groove includes:
  • a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area, and the material of the metal layer includes any one of aluminum, copper, and silver.
  • bonding the bonding area on the first surface of the second substrate to the support block includes:
  • an embodiment of the present invention provides a method for manufacturing an ultrasonic transducer, for manufacturing the ultrasonic transducer according to any one of the first aspect;
  • a sacrificial layer is removed by a wet process to generate a cavity
  • a dielectric layer is deposited on the upper electrode to form a closed cavity.
  • forming a groove on the first surface of the integrated circuit wafer includes:
  • a groove is formed on the first surface of the integrated circuit wafer through photolithography and etching processes.
  • depositing a diaphragm layer on the support layer and the sacrificial layer includes:
  • a silicon nitride layer with a predetermined thickness is deposited on the support layer and the sacrificial layer, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
  • the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  • making a release hole that penetrates the upper electrode, the diaphragm layer, and reaches the sacrificial layer includes:
  • the present invention provides an ultrasonic transducer manufacturing apparatus, including:
  • a processor is used to execute the program stored in the memory, and when the program is executed, the processor is used to execute the method according to any one of the second aspect or the third aspect.
  • the present invention provides a computer-readable storage medium, including: instructions that, when run on a computer, cause the computer to perform the method described in any one of the second aspect or the third aspect.
  • the ultrasonic transducer and its manufacturing method provided by the present invention are formed by sequentially stacking a substrate, a lower electrode, a support block, a diaphragm layer, and an upper electrode; wherein, the substrate is provided on the side close to the diaphragm layer A groove in which the lower electrode is filled; the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity and the lower The positions of the electrodes correspond. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • Embodiment 1 is a schematic structural diagram of an application scenario provided by Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of an ultrasound transducer provided in Embodiment 1 of the present invention.
  • Embodiment 3 is a schematic flowchart of a method for manufacturing an ultrasonic transducer provided by Embodiment 2 of the present invention
  • FIG. 4 is a schematic structural view of sequentially manufacturing an upper electrode and a diaphragm layer on a first substrate
  • FIG. 5 is a schematic structural view of making a support layer on the diaphragm layer
  • FIG. 6 is a schematic structural view after a groove is formed on the first surface of the second substrate
  • FIG. 7 is a schematic diagram of the structure after filling the groove with a metal layer
  • FIG. 8 is a schematic structural view of the bonding area of the first surface of the second substrate after bonding with the support block;
  • FIG. 10 is a schematic flowchart of a method for manufacturing an ultrasonic transducer provided in Embodiment 3 of the present invention.
  • FIG. 11 is a schematic structural view of a groove formed on the first surface of the integrated circuit wafer
  • FIG. 12 is a schematic diagram of the structure after filling the groove with a metal layer
  • FIG. 13 is a schematic diagram of the structure after filling the sacrificial layer in the groove of the support layer;
  • FIG. 14 is a schematic diagram of the structure after depositing the diaphragm layer on the support layer and the sacrificial layer;
  • 15 is a schematic diagram of the structure after the release hole is made.
  • FIG. 16 is a schematic structural diagram of another completed ultrasonic transducer
  • FIG. 17 is a schematic structural diagram of an ultrasonic transducer manufacturing apparatus provided in Embodiment 4 of the present invention.
  • CMUT Micromachined ultrasonic transducer
  • CMUT is a micro-electromechanical device that utilizes the mutual conversion of acoustic energy and electrical energy. It has the advantages of high integration and good sensitivity. It is an ideal device for making ultrasonic transducers.
  • CMUT can convert ultrasonic waves into electrical signals and electrical signals into ultrasonic waves.
  • a DC voltage is applied between the upper electrode and the lower electrode, the strong electrostatic field pulls the diaphragm layer toward the substrate, and then an AC voltage is applied between the upper electrode and the lower electrode. At this time, the diaphragm layer will vibrate. Generate ultrasound.
  • an appropriate DC bias voltage is applied between the upper electrode and the lower electrode, the diaphragm layer vibrates under the action of ultrasonic waves, and the capacitance between the two electrode plates changes. By detecting this change, ultrasonic waves are received.
  • FIG. 1 is a schematic structural diagram of an application scenario provided by Embodiment 1 of the present invention.
  • an ultrasonic transducer can be applied in the field of fingerprint recognition.
  • the second surface of the substrate 106 of the ultrasonic transducer 100 is disposed on the backing plate 201, the matching layer 202 is disposed on the upper electrode 101 of the ultrasonic transducer 100, and the screen layer 203 is disposed on the matching layer 202.
  • the ultrasonic transducer 100 emits ultrasonic waves, and the ultrasonic waves sequentially pass through the matching layer 202 and the screen layer 203 and reach the finger skin 204.
  • the matching layer 202 may be designed as a single-layer or multi-layer structure to enhance the transmittance of ultrasonic waves. Specifically, when the ultrasonic wave emitted by the ultrasonic transducer 100 reaches the ridge region 2041, since the acoustic impedance of the skin is small, the ultrasonic wave easily passes through the skin, so the strength of the formed echo signal is weak.
  • the ultrasonic wave emitted by the ultrasonic transducer 100 reaches the valley region 2042, since there is a gap between the skin and the screen layer 203, the acoustic impedance is large, and the strength of the echo signal formed by it is strong. Based on the above principle, the strength of the echo signal of the sound wave on the skin surface can be used to form the echo image, so that the characteristic information of the skin surface can be completely reflected. Finally, by comparing the skin surface feature information with pre-stored skin feature information, the purpose of biometric identification is achieved.
  • FIG. 2 is a schematic structural diagram of an ultrasound transducer according to Embodiment 1 of the present invention.
  • the ultrasound transducer in this embodiment may include: a substrate 106, a lower electrode 105, and a support block stacked in this order 103.
  • the space between 106 is divided into a closed cavity 104, and the cavity 104 corresponds to the position of the lower electrode 105.
  • the upper electrode 101 is a conductive layer deposited on the diaphragm layer 102, and the thickness of the conductive layer is 0.6 microns; the material of the conductive layer includes any one of aluminum, copper, and silver.
  • the specific thickness of the conductive layer is not limited, and those skilled in the art may adjust the settings according to actual needs. Specifically, any one of chemical vapor deposition, evaporation, and sputtering may be used to deposit a conductive layer on the upper electrode 101.
  • the strong electrostatic field pulls the diaphragm layer 102 toward the substrate, and then an AC voltage is applied between the upper electrode 101 and the lower electrode 105. At this time, the diaphragm layer 102 vibrates to generate ultrasonic waves. Conversely, after an appropriate DC bias voltage is applied between the upper electrode 101 and the lower electrode 105, the diaphragm layer 102 vibrates under the action of ultrasonic waves. At this time, the capacitance between the upper electrode 101 and the lower electrode 105 changes. This change enables the reception of ultrasonic waves.
  • the substrate 106 may be a silicon-based substrate, and an integrated control circuit is provided on the silicon-based substrate, the integrated control circuit is electrically connected to the lower electrode 105, and the upper electrode 101 is grounded.
  • the lower electrode 105 may serve as an anode
  • the upper electrode 101 may serve as a cathode.
  • the upper electrode 101 is a full-surface electrode, the upper electrode 101 is grounded, and the lower electrode 105 is independently controlled by a control circuit, thereby forming a plurality of ultrasonic transducer array element structures. In this way, the lead structure can be simplified, which facilitates the integration and wiring of the ultrasonic transducer.
  • the material of the diaphragm layer 102 includes: nitride or oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • the diaphragm layer can be made of Si3N4 material.
  • the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves. Therefore, it can be set according to the actual application. This embodiment is not specifically limited.
  • the number of grooves is 2 or more, and each groove is filled with the lower electrode 105.
  • the material of the lower electrode includes any one of aluminum, copper, and silver.
  • the number of the cavity 104 is 2 or more, and each cavity corresponds to the position of at least one lower electrode 105.
  • the position of the cavity 104 corresponds to the position of the lower electrode 105.
  • there are multiple cavities 104 there are also multiple corresponding lower electrodes 105.
  • three grooves are provided on the substrate 106, and no metal material is filled in the grooves to form the lower electrode 105.
  • the supporting block 103 is interposed between the diaphragm layer 102 and the substrate 106, and is used to divide the space between the diaphragm layer 102 and the substrate 106 into a plurality of closed cavities 104.
  • the cavity 104 is to provide a gap for the vibration of the diaphragm layer 102.
  • the substrate, the lower electrode, the support block, the diaphragm layer, and the upper electrode are stacked in this order; wherein, the side of the substrate close to the diaphragm layer is provided with a groove, and the lower electrode is filled in the groove;
  • the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity corresponds to the position of the lower electrode. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • FIG. 3 is a schematic flowchart of a method for manufacturing an ultrasonic transducer according to Embodiment 2 of the present invention. As shown in FIG. 3, the method in this embodiment may include:
  • the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  • a silicon nitride layer with a predetermined thickness may be deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer.
  • the material of the diaphragm layer may also be oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • Si3N4 material can be used to make the diaphragm layer, and the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves, and therefore, it can be set according to the actual application.
  • This embodiment is not specifically limited.
  • FIG. 4 is a schematic structural view of sequentially manufacturing an upper electrode and a diaphragm layer on a first substrate; as shown in FIG. 4, first, an upper electrode 502 and a diaphragm layer 503 are deposited on a first substrate 501, and then on the diaphragm layer The support layer 504 is deposited on 503. Specifically, any one of chemical vapor deposition, evaporation, and sputtering may be used to deposit the conductive layer on the first substrate.
  • the support layer may be deposited on the diaphragm layer by any one of chemical vapor deposition, evaporation, and sputtering.
  • the material of the support layer may be a material that easily generates a bonding structure, such as Ge. Further, photolithography and etching processes may be used to form the shape of the support block on the support layer.
  • FIG. 5 is a schematic structural diagram of a support layer made on the diaphragm layer. As shown in FIG. 5, the support block 5041 is located on the diaphragm layer 503. The shape of the support block 5041 may be a matrix, a polygon, or the like.
  • FIG. 6 is a schematic structural view after a groove is formed on the first surface of the second substrate. As shown in FIG. 6, three grooves 506 can be formed on the first surface of the second substrate 505.
  • a metal layer is filled in the groove, and the metal layer constitutes the lower electrode and the bonding area.
  • FIG. 7 is a schematic diagram of the structure after filling the groove with a metal layer.
  • a metal layer can be filled in the groove 506 by electroplating or sputtering.
  • the material of the metal layer includes any one of aluminum, copper, and silver.
  • FIG. 8 is a schematic structural view of the bonding area of the first surface of the second substrate after bonding with the support block.
  • the metal layer of the bonding area 5072 of the second substrate and the support block 504 are formed together Crystalline bonding.
  • Al-Ge eutectic bonding can be formed.
  • FIG. 9 is a schematic structural diagram of an ultrasonic transducer that is completed.
  • an upper electrode on the first substrate; depositing a diaphragm layer on the upper electrode; depositing a support layer on the diaphragm layer, and graphically processing the support layer to obtain a corresponding support block;
  • a groove is formed on the first surface of the second substrate; a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area; the bonding area of the first surface of the second substrate is bonded to the support block; removed On the first substrate, an ultrasonic transducer is obtained. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • FIG. 10 is a schematic flowchart of a method for manufacturing an ultrasonic transducer according to Embodiment 3 of the present invention. As shown in FIG. 10, the method in this embodiment may include:
  • FIG. 11 is a schematic structural view of a groove formed on the first surface of the integrated circuit wafer. As shown in FIG. 11, a groove can be formed on the first surface of the integrated circuit wafer 601 through photolithography and etching processes .
  • a metal layer 602 can be filled in the groove through an electroplating or sputtering process.
  • the metal layer 602 constitutes a lower electrode.
  • the material of the metal layer 602 includes any one of aluminum, copper, and silver. 12 is a schematic diagram of the structure after filling the groove with a metal layer.
  • S404 Open a groove on the support layer, and fill the sacrificial layer in the groove.
  • FIG. 13 is a schematic diagram of the structure after filling the sacrificial layer in the groove of the support layer. As shown in FIG. 13, a groove can be opened in the support layer 603 through photolithography and etching processes, and then the sacrificial layer 604 can be filled in the groove
  • the material of the sacrificial layer 604 may be silicon oxide or polysilicon material.
  • FIG. 14 is a schematic diagram of the structure after depositing the diaphragm layer on the support layer and the sacrificial layer.
  • a silicon nitride layer with a predetermined thickness can be deposited on the support layer 603 and the sacrificial layer 604. ⁇ ⁇ 605.
  • the material of the diaphragm layer 605 may also be oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • Si3N4 material can be used to make the diaphragm layer, and the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves, and therefore, it can be set according to the actual application. This embodiment is not specifically limited.
  • the upper electrode can be deposited on the diaphragm layer by any of chemical vapor deposition, evaporation, and sputtering.
  • the upper electrode is a full-face electrode.
  • the material of the upper electrode includes: aluminum, copper, silver Of any kind.
  • FIG. 15 is a schematic view of the structure after the release hole is made.
  • the release hole 607 penetrates the upper electrode 606 and the diaphragm layer 605 and reaches the sacrificial layer 604.
  • a release hole 607 that penetrates through the upper electrode 606, the diaphragm layer 605, and reaches the sacrificial layer 604 can be made by photolithography and etching processes.
  • a wet process is used to remove the sacrificial layer on the basis of FIG. 15 to generate a cavity.
  • FIG. 16 is a schematic structural diagram of another completed ultrasonic transducer. As shown in FIG. 16, a dielectric layer 608 is deposited on the upper electrode 606, and the dielectric layer 608 is used to seal the cavity 609.
  • a groove is formed on the first surface of the integrated circuit wafer; a metal layer is filled in the groove, and the metal layer constitutes the lower electrode; a support layer is deposited on the first surface of the wafer and the metal layer; Open a groove on the support layer and fill the sacrificial layer in the groove; deposit a diaphragm layer on the support layer and the sacrificial layer; deposit an upper electrode on the diaphragm layer; make a penetrating upper electrode and a diaphragm layer and reach the sacrificial layer Through the release hole, the sacrificial layer is removed by a wet process to create a cavity; a dielectric layer is deposited on the upper electrode to form a closed cavity, and finally an ultrasonic transducer is obtained. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • FIG. 17 is a schematic structural diagram of an ultrasonic transducer manufacturing apparatus provided in Embodiment 4 of the present invention. As shown in FIG. 17, the ultrasonic transducer manufacturing apparatus 70 in this embodiment includes:
  • the memory 72 is used to store executable instructions, and the memory may also be a flash (flash memory).
  • the processor 71 is configured to execute executable instructions stored in the memory, so as to implement various steps in the method involved in the foregoing embodiments. For details, please refer to the related description in the foregoing method embodiment.
  • the memory 72 may be independent or integrated with the processor 71.
  • the ultrasonic transducer manufacturing apparatus 70 may further include:
  • the bus 73 is used to connect the memory 72 and the processor 71.
  • embodiments of the present application also provide a computer-readable storage medium in which computer-executable instructions are stored.
  • the user equipment executes the above various possibilities Methods.
  • the computer-readable medium includes a computer storage medium and a communication medium, where the communication medium includes any medium that facilitates transfer of a computer program from one place to another.
  • the storage medium may be any available medium that can be accessed by a general-purpose or special-purpose computer.
  • An exemplary storage medium is coupled to the processor so that the processor can read information from the storage medium and can write information to the storage medium.
  • the storage medium may also be an integral part of the processor.
  • the processor and the storage medium may be located in an application specific integrated circuit (ASIC).
  • ASIC application specific integrated circuit
  • the application specific integrated circuit may be located in the user equipment.
  • the processor and the storage medium may also exist as discrete components in the communication device.
  • ROM read-only memory
  • RAM random access memory
  • magnetic disk magnetic disk
  • optical disk etc.

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Abstract

La présente invention concerne un transducteur ultrasonore (100) ainsi qu'un procédé de fabrication associé. Le transducteur ultrasonore (100) comprend : un substrat (106), des électrodes inférieures (105), des blocs de support (103), une couche de diaphragme vibrant (102) et une électrode supérieure (101) disposées séquentiellement de manière empilée, des rainures étant formées dans la surface, à proximité de la couche de diaphragme vibrant (102), du substrat (106); les rainures sont remplies avec les électrodes inférieures (105); l'espace entre la couche de diaphragme vibrant (102) et le substrat (106) est séparé en cavités fermées (104) par les blocs de support (103); et les cavités (104) correspondent aux positions des électrodes inférieures (105). Selon le transducteur ultrasonore (100), l'agencement des électrodes inférieures (105) est réalisé, le mode d'attaque de fil est plus simple, et la transmission et la réception d'éléments de réseau du transducteur ultrasonore (100) sont commandées de manière commode et indépendante.
PCT/CN2018/111580 2018-10-24 2018-10-24 Transducteur ultrasonore et son procédé de fabrication WO2020082256A1 (fr)

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PCT/CN2018/111580 WO2020082256A1 (fr) 2018-10-24 2018-10-24 Transducteur ultrasonore et son procédé de fabrication
CN201880002105.7A CN109561876A (zh) 2018-10-24 2018-10-24 超声换能器及其制造方法

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CN113165017B (zh) * 2019-11-21 2022-06-10 深圳市汇顶科技股份有限公司 超声换能器、信息采集元件及电子设备
WO2021189208A1 (fr) * 2020-03-23 2021-09-30 深圳市汇顶科技股份有限公司 Transducteur ultrasonore, système de balayage ultrasonore, et procédé de traitement
WO2021217439A1 (fr) * 2020-04-28 2021-11-04 深圳市汇顶科技股份有限公司 Transducteur ultrasonore, élément d'acquisition d'informations et dispositif électronique
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CN113926679B (zh) * 2020-06-29 2022-09-27 京东方科技集团股份有限公司 声波换能单元及其制备方法和声波换能器
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