Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
  • G01N21/9501—Semiconductor wafers
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
  • G01N15/02—Investigating particle size or size distribution
  • G01N15/0205—Investigating particle size or size distribution by optical means
  • G01N15/0211—Investigating a scatter or diffraction pattern
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
  • G01N21/21—Polarisation-affecting properties
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
  • G01N21/47—Scattering, i.e. diffuse reflection
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/8806—Specially adapted optical and illumination features
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/94—Investigating contamination, e.g. dust
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
  • G01N21/956—Inspecting patterns on the surface of objects
  • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
  • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
  • G01N21/47—Scattering, i.e. diffuse reflection
  • G01N2021/473—Compensating for unwanted scatter, e.g. reliefs, marks
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/8806—Specially adapted optical and illumination features
  • G01N2021/8822—Dark field detection
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/8806—Specially adapted optical and illumination features
  • G01N2021/8848—Polarisation of light

Definitions

• the present disclosure is generally related to particle inspection and, mote particularly, to dark-field monkeye inspection.
• Partide detection systems are commonly Utilized in semiconductor proceeding lirips to identify defects or particulates on wafers such as, but riot limited to, uhpatterhod wafers. As semiconductor devices continue to shrink, pulpe detection systems require corresponding increases in sensitivity and resolution.
• A Significant source of noise that may limit measurement sensitivity is surface scattering on a wafer, which may be present even for optically polished surfaces. While various methods have been proposed to suppress surface scattering With respect tb scattering from partides, Midi methods may fail to achieve desired sensitivity levels and/or may achieve sensitivity at the expense of degraded image quality. There is therefore a need to develop systems and methods that mitigate the defiderides addressed above.
• the system indudes an illumination source to generate an illurrehation beam.
• the system indudes one or more illumination optics to direct the illumination beam to a sample at an off-axis angle along ah illumination direction
• the system indudes a detector.
• the system includes one or niQfe collection optics to generate a dark-field image of the sample on tihe detector based on light collected from the sample in response to file illumination beam.
• the system indudes a radial polarizer located at a pupil plane Of the One or more collection optics, where the radial polarizer is configured to reject light with radial polarization with respect to a reference point in the pupil plane corresponding to specular reflection of the illumination beam from the sample.
• the system indudes an illumination source to generate ah illumination beam.
• the system indudes one or more illumination optics to direct the illumination beam to a sample at Oh off-axis angle along ah illumination direction.
• the system rhdU des a detector.
• the system indudes one or more collection optics to generate a dark-field image of the sample on the detector based on light collected from the sample in response to the illumination beam.
• the system includes a phase mask located at a pupil plane Of the one or more collection Optics configured tb provide different phase shifts for fight in two or mote regions of a collection area of the pupil plane to reshape a point spread function of light scattered from one or more partides on the sample; Where the collection area corresponds to a numerical aperture Of the one or more collection optics.
• the method includes illuminating a sample with a p-pol arized illumination beam at an oblique angle along an illumination direction.
• the methofi includes collecting light from the sample in response to the illumination beam in a dark-field mode with one or more collection optics.
• the method indudes propagating tiie light from the sample through a radial polarizer located at a pupil plane of the one or more collection optics, wherein the radial polarizer is configured to reject light with radial polarization with respect to a reference point in the pupil plane corresponding to specular reflection of the illumination beam from the sample
• the method includes propagating the light frarn the sampie through a phase mask lpcated at tiie pupil plane configured to provide different phase shifts for fight in two or more regions of a collection area of the pupil plane to reshape a point spread function of light scattered from One or rftpre particles bn the sample, where the collection atoa corresponds to a numerical aperture of the one Or more collection optics.
• the method includes generating a dark-field image of the sample based oh light propagating through the radial polarizer and the phase mask in response to the illumination beam* where the dark-field image of the sample is based on light scattered by one Of more particles dh a surface of the sample,
• FIG. 1 is a conceptual view of a particle detection system, in accordance with one or mote embodiments of the present disclosure
• FIG. 2A is a pupil-plane scattering map of surface scOtterihg in response fe obliquely- incident p-polarized tight, in accordance with one or more embodiments of die present disclosure
• is a pupil-plane scathing map of light scattered by a small particle ih response to obiigueiy-tnddenf p-polarized light, in accordance with one or more embodiments ofthe present disclosure
• FIG- 3A is a top view of a continuous haze-rejection polarizer, in accordance with one or more embodiments of the present disclosure
• FIG- 3B is a top view of a segmented haze-reaction polarizer, in accordance with one or more embodiments of the present disclosure
• FIG. 4A is a conceptual view of the haze-rejection polarizer overlaid on the scattering map of FIGS. 2A, in accordance with one or more embodiments of the present disclosure
• FIG. 4B is 3 ⁇ 4 conceptual view of the haze-reiecfiph pblarizer overlaid oh the scattering map of FIGS. 2B, in accordance with one or more embodiments of the present disclosure;
• FIG. 5 includes an electric field distribution of p-polarized light by a sub-resolution particle and a corresponding image of toe sub-resolution particle, in accordance with one or more embodiments of the present disclosure
• FIG. t3 ⁇ 4A includes a conceptual top view of a phase mask with four segments to divide the pupil into four regions, the electric field distribution associated with p-poJari 1 ⁇ 2ed light scattered by a sub-resc ⁇ Ution plausiblee, a modified electrie field distribution based oh the phase mask, and the corresponding reshaped image of the particle, in accordance with One or more embodiments of the present disclosure;
• FIG. 6B is a conceptual top view of a phase mask including two segments to divide the pupil into two segments.
• FIG.7 A indudes an image of a silicon wafer with sub-40 nm silica partides taken without a phase mask, ari inset including an expanded image of one of toe partides, and a plot illustrating a cross-section of toe expanded image, in accordance with one dr more embodiments of the present disclosure
• FIG. 7B indudes an image of toe silicon wafer with sub-4p nm silica particles shown in FIG- 7A taken with a phase made, an inset induding an expanded image of one of the particles, and a plot illustrating a cross-section of the expanded image, in accordance with one or more embodiments of the present disclosure
• FIG. 8A includes an image of a silicon Water with sub-40 nm silica partides taken without a haze-rejection polarizer or a phase mask and a plot illustrating a cross-section of the particles, in accordance with opd or more embodiments of the present disdosure;
• FIG. 8B indudes an image of the silicon wafer with sub-40 nm silica partides shown in FIG, 8A taken with both a haze-rejection polarizer and a phase mask, and a plot illustrating a cross-section of the partides, in accordance with one or more embodiments of the present disclosure
• FIG. 9 is a flow diagram illustrating steps performed in a method for monkeye detection, in accordance with one or more embodiments of the present disdosure.
• Embodiments ofthe present disclosure are directed to systems and methods for monkeye detection based on dark-field imaging utilizing a haze-rejection polarizer in a pupil plane to selectively filter surface scattering (e g., surface haze) to facilitate detection of light scattered from partides on a surface.
• a haze-rejection polarizer may have spatially-varying refaction directions corresponding to an expected polarization distribution of surface haze across the pupil plane.
• a smoothiee nay indUde any surface defect on a sample of interest induding, but not limited to, a foreign pulpe, a scratch, a pit, a hole, a bump, or the like.
• a polarizer placed in the pupil plane may selectively filter light based on the scattering angle and polarization. It is recognized herein that light scattered from a particle and light scattered from a surface may exhibit different electric field distributions (b& , polarization arid field strength) as a function of scattering angle. Further, differences in the electric field distribution (e.g., scattering map) ipay be particularly significant fer oNiquely-inddent p-pofarized light.
• Efface haze from obliquelymcident p-polarized light may be approximately radially polarized with respect to an angle of specular reflection, whereas scattering from a monkeye may be apptokimately radially polarized with respect to a surface normal.
• a dark-field monkeye detection system includes a radial apelerfejection polarizer oriented in the pupil plane such that an apex angle of fee redial haze-rejection polarizer is placed at a location associated with specular reflection of the obtrqueiyfeddent p-polarized light to selectively reject fee Surface haze.
• Additional embodiments of the present disclosure are directed to reshaping a point spread function (PSF) .of light scattered by partides.
• PSF point spread function
• An image of an object ⁇ e d- » a mincee) that is waller than an imaging resolution (e.g t much smaller than fee illumination wavelength) is generally limited by fee PSF of fee imaging system.
• fee spetific distribution of tine electric field in tine pupil plane e g., fee angle and polarization of collected light
• the image of such an object may be larger and/or have a different shape than the system PSF.
• a dark-field image of a monkeye (e.g., ari image of a monkeye formed with scattered or diffracted light) smaller than the imaging resolution &heh illuminated wife oblique p- polarized light may be an annulus that spreads to an area larger than the system PSF, which negatively impacts pulpe detection sensitivity
• This annulus Shape arid increase ih toe size of the PSF or imaged spot of a pupe may be associated with destructive interference of collected light at a center of the imaged spot on a detector.
• a dark-fiefd particle detection system indudes a phase mask at the pupil plane to fadlitate constructive interference of collected light at the center ofthe imaged spot associated with pulpe scattering to tots regard, toe PSF ofimaged particles may be tightened and may be closer to the system PSF.
• phase mask rriajy have various configurations suitable for reshaping toe PSF ofimaged partides.
• the phase mask ihdudes a segmented optic to provide different phase shifts tor light in different regions of the pupil plane, where at least one segment is formed from a half-wave plate.
• toe present disdosure are directed tp a dark-field monkeye detection systetn incorporating both a radial haze-rejection polarizer and a phase plate for reshaping the PSF of imaged partides in a pupil plane.
• Wafer inspection is generally described in US, Patent No. 9,874,526 issued on January 1, 20l8* U.S. Patent No.9, 291, 575 issued on March 22, 2016.
• FIGS. 1 through 9 systems and methods for sensitive particle detection will be described in greater detail
• FIG. 1 is a conceptual view of a particle detection system 100, in accordance with one or more embodiments of toe present disclosure
• toe particle detection system 100 indudes an i!iurhinatioh source 102 to generate an illumination beam 104, an illumination pathway tOO induding cm or more illumination optics to direct toe illumination beam 104 to a sample 108, and a collection pathway 110 including one or more Collection optics to collect light emanating from the sample 108 (e g , sample light 1 ⁇ 2).
• toe collection pathway 110 may indude an objective lens 114 to collect at least a portion of the sample light 112
• the sample light 112 may indude any type of light emanating from toe sample iQ6
• the illumination beam 104 may include one or htere selected wavelengths of light including, but not limited to, ultraviolet (UV) radiation, visible radiation, or infrared (IR) radiation.
• UV ultraviolet
• IR infrared
• the iliumination source 102 may provide, but is hot required to provide, an illumination beam 104 having wavelengths shorter than approximately 350 nm.
• the illumination beam 104 may provide wavelengths of approximately 3 ⁇ 466 nm.
• the iHuntipatipn beam 104 may provide wavelengths of approximately 213 nm. It is recognized herein that imaging resolution and light scattering by small particles (e ⁇ g,, relative to the wavelength of the illumination beam 104) both generally scale Vyith Wavelength such that cjtecreastng the wavelength of the iilumrhation beam 104 may generally increase the imaging resolution and scattering signal from the small particles. Accordingly, illumination beam 104 may indude short-wave!ength light including, but notlimited to, extreme ulteaviotet ⁇ EUV) light, deep ultraviolet (bUV) light, or Vacuum ultraviolet (VUV) light.
• EUV extreme ulteaviotet ⁇ EUV
• bUV deep ultraviolet
• VUV Vacuum ultraviolet
• the illumination source 102 may include any type of light source known in the art. Further, the illumination source 102 may provide ah illumination beam 104 having any selected spatial or temporal coherence characteristics. In one embodiment, the illumination source 102 indudes one or more laser sources such as, but not limited to, One or more narrowband laser sources, one or more broadband laser sources, one or more supercontinuum laser sources, or one or more white light laser sources. In another embodiment, the illumination source 102 includes a laser-driven fight source (LDLS) such ds, but hot limited to, a laser-sustained plasma (LSP) source.
• LDLS laser-driven fight source
• LSP laser-sustained plasma
• the illumination source 102 may include, but is not limited to, a LSP lamp, a LSP bulb, or a LSP chamber suitable fry containing ope or more elements that, when excited by a laser source into a plasma state, may emit broadband illumination.
• the illumination source 102 indudes a lamp source such as, but not limited to, an arc lamp, a discharge lamp, or an eiedrpde-less iarrip.
• the illumination source 102 provides a tunable illumination beam 104.
• the illumination source 102 may include a tunable source of illumination (e.g., one or more tunable lasers, and the like).
• toe illumination source 102 may include a broadband illurdnatidn source coupled to ahy combination af fixed or tunable filters.
• the illumination source 102 may furtherprovide an illumination beam 104 Having any temporal profile.
• the illumination beam 104 may have a continuous temporal profile, a modulated temporal pfdfiie, a pu!sed temporal profile, and the like.
• toe Strength of surface hare may depend on multiple factors induding, but not limited to incidence angle Of polarization of the illumination beam 104.
• the strength of surface haze may be relatively high for near-normal angles of incidence and may drop off for higher incidence angles.
• toe illumination pathway 106 rha ⁇ indude one dr ntorp illumination optics such as, Exit not limited to, lenses 116, mirrors, and toe like to direct toe illumination beam 104 to the sample 108 at an obfiqpe inddence angle to decrease the generation of surface haze.
• the oblique incidence angle may generally include any selected inddence angle.
• toe inddence angle may be, but is not required to be ⁇ greater than 60 degrees with respect to a surface normal.
• the illumination pathway 106 includes one or more illumination beam-conditioning components 118 suitable for modifying and/or conditioning the illumination beam 104-
• the one or more illumination beamconditioning components 118 may include, but aro not limited to, one or more polarizers, one or more waveplates, one or more filters, one or more beamsplitters, one or more diffusers, one or more homogenizers, one or more apodizers, or one of more beam
• the one or more illumination beah>-conditibning components 118 indude a polarizer or wayeplate oriented to provide a p-polarized illumination beam 104 on the sample 108.
• the respire detection system 100 includes a detector 120 configured to capture at least a portion of the sample light 112 collected by toe collection pateway 110.
• the detector 120 may indude any type of optical detector known in the art suitable for measuring illumination received from the sample 108.
• a detector 120 may iridude a multi-pixel detector suitable for capturing an image of tee sample 106 such as, but not limited to, a charge-coupled device (CCD) detector, a complementary metal-oitide-sprrMb(mdudor (CMOS) detector, a time-delayed integration (TDI) detector, a photomultiplier tube (PMT) array, an avalanche photodiode (ARD) array, or the like.
• a detector 120 indudes a spectroscopic detector suitable fix ⁇ identifying wavelengths of the sample light 112,
• the collection pathway 110 may include any number of beam-cond itioning elements 122 to direct and/or modify the sample light 112 including* but not limited to, one of more lenses, one or more filters, one dr more apertures, one of more polarizers, or one or more phase plates.
• the collection pathway 110 indudes one or more beam-conditioning elements 122 located at or near a pupil plane 124.
• the collection pateway 110 may indude beam-conditioning elements 122 such as, but not limited to, a haze-rejection polarizer (e g., a redid polarizer, or tee like) or a phase mask at or near a pupil plane 124.
• tee pneumoniae detection system 100 may control arid adjust selected aspects of the sample light 112 used to generate am image on the detector 120 induding. but not limited to, the intensify, phase, and polarization of the sample light 112 as a function of scattering angle and/or position on tee sample.
• the collection pathway TlO may have any number of pupil piahes $24.
• the collection pathway HO may indude one dr more lenses 126 to generate an image of the pupil plane 124 and one or more lenses 128 to generate an image Of tee surface of the sample 108 on the detector 120.
• a limited number of beam-ddhdifiohing elements 122 may be placed at a particular pupil plane 124 or sufficiently near a particular pupil plane 124 to provide a desired effect.
• reference to one or more elements at a pupil plane 124 may generally describe one or more elements at or sufficiently dose to a pupil plane 124 to produce a desired effect.
• tee collection pathway 110 may indude additional lenses to generate one dr more additional pupil planes 124 such that any number of beam-conditioning elements 122 may be placed at or near a pupil plane 124.
• the particle detection system 100 includes a controller 130 including one or more processors 132 configured to exscute program instructions maintained oh a memory medium 134 (e.g., memory). Further, the controller 130 may be communicatively coupled to any components of the particle detection system 100, in this regard, the one or more processors 132 of controller 130 may execute any of the venous process steps described throughout the present disclosure: For example, the controller 13Q may receive, analyze, and/or process data from the detector 120 (e.g., associated with an image of tee sample 108). By way of another example, tee controller 13d may control or otherwise direct arty components of ted psrtide detection system 100 using control signals.
• a controller 130 including one or more processors 132 configured to exscute program instructions maintained oh a memory medium 134 (e.g., memory).
• the controller 130 may be communicatively coupled to any components of the particle detection system 100, in this regard, the one or more processors 132 of controller 130 may execute any of the
• the one of mare processors 132 of e controller 130 rray include any processing element known in the art.
• the one or more processors 132 may indude any microprocessor-type device configured to execute algorithms and/or instructions
• the one of more processors 132 may consist of a desktop computer, mainframe computer system, workstation, image computer, parallel processor; or any Other computer system (p.g,, networked cbmputer) configured to execute a program configured to operate the pneumoniae detection system 100, as described throughout the present disclosure.
• teat tee term ⁇ processor may be broadly defined to encompass any ddvice having bpe of more processing elements, vyteich execute program instructions from a non-transitory memory medium 134. Further; the steps described throughout the present disclosure may be carried out by a single cdhtrdfef 130 or, eltefriatiWy, multiple controllers. Additionally, the contrdlef 130 may include one or more controllers housed in a common housing or within multiple housings. In this Way, any controller dr combination of controllers may be separately packaged as a module suitable for integration into particle detection system 100.
• the memory medium 134 may include any storage medium known in the art suitable for storing program instructions executable by the associated one or more processors 132.
• the memory medium 134 may include a non-transitory memory medium.
• the memory medium I34 may include, but is not limited to, a read-only memory (ROM), a random-access memory (RAM), a magnetic or optical memory device (e.g., disk), a magnetic tape, a solid-state drive, and the like. It is further noted that memory medium 134 may be housed in a common controller housing with the one or more processors 132.
• the memory medium 134 may be located remotely with respect to the physical location of the One of more processors 132 anti controller 130, For instance, the one or more processors 132 of controller ⁇ 30 may access a remote memory (e.g,, sSrVer), accessible through a network (e g., internet, intranet, and the like). Therefore, the above description should not be interpreted as a limitation on the present invention but merely On illustration.
• the particle detection system 100 may be configured as any type of image-based particle detection system known in the art.
• the particle detection system 100 is a dark-field imaging system to exclude specularly-reflected light.
• the particle detection system 100 may image the sample 108 based primarily on scattered light.
• Dark-field imaging may further be implemented using any technique known in the art
• ah Orientation arid/or a numerical aperture (NA) of tire objective lehs 114 may be selected such that the objective lens 114 does not collect specularly-reflected light. For example, as illustrated in FIG.
• the objective lens 1 l4 is oriented approximately normal to the sample 108 and has a NA that does not include a speculariy- reflection portion of the illumination beam 104- Further, the objective lens i 14 may have, but is not required to have, a NA of approximately 0.9 or greater.
• the particle detection system 100 may include one or more components to block specular reflection from reaching the detector 120, lOOMi Referring how to FIGS. 2A through 4B, pupil-plane polarization filtering is described in greater detail.
• the monkey detection system 100 indudes a haze-rejection polarizer in a pupil plane of the collection pathway 110 (e.g., collection optics) to preferentially reject light scattered froth a surface of the sample 108 (e.g,, surface haze), which may be considered noise in monkeye detection applications in this regard, an image of the sample 108 may primarily be formed from light scattered by one dr more paftides (or other defects in the surface).
• FIG: 2A is a pupil-plane scattering map 202 of surface scattering (e.g., surface haze) in response to obliqueiy-incident p-polarized light, iri accordance with one or more embodiments of the present disclosure.
• FIG. 2B is a pupil-plane scattering map 204 of light scattered by a small particle (e.g,, small relative to an imaging resolution df the particle detection system 100 pr a wavelength of the illumination beam 104) :
• a small particle e.g, small relative to an imaging resolution df the particle detection system 100 pr a wavelength of the illumination beam 104
• the scattering maps 202, 204 indude the electric field strength indicated by tee shading with white as the highest intensity and blade as tee lowest intensity. Further, the scattering maps 202, 204 indude tee polarization orientation of light as a function of collection angle (e.g., scattering angle) in tee pupil plane 124 indicated by tee overlaid ellipses.
• the scattering maps 202, 204 are bounded by a collection area 206 in the pupil plane 124, which is associated with the range of angles that sample light 112 is collected by the partible detection system 1Q0.
• the collection area 206 may correspond to the numerical aperture (NA) of the objective lens
• the scattering maps 202, 204 are based on a configuration of the particle detection system 100 illustrated in FIG. 1, Accordingly, the specular reflection angle 206 is located outside of the collection area 206 along the illumination direction 210 (e.g., outside tiie collection area 206 on tee right side dfthe circular collection area 206 in FIG.
• the scattering maps 202, 204 may be representative of scattering from a wide variety of materials induding, but not limited to, silicon, epitaxial, and pdy- silicon wafers. However, it is to be understood that tiie scattering maps 202, 204 are provided solely for illustrative purposes and should not be interpreted as limiting the present disclosure.
• the electric field distribution (e.g., electric field strength arid polarization orientation) of light scattered by a particle may differ substantially from the electric fteld distribution of light scattered by a surface, particularly when the illumination beam 104 is p-polarized.
• sample light 112 associated With surface haze generally exhibits ah approximately radial polarization distribution With respect to the specular reflection angle 206 in the collection area 206 as illustrated ih FIG. 2A
• sample light 112 associated with monkeye scattering generally exhibits an approximately radial polarization distribution with respect to the surface normal as illustrated iri Fid. 2B.
• the polarization of tire scattered sample light 1 i2 light is generally elliptical. M ean be seen from FIGS, 2A arid 2B, at rnost locations iri the pupil plane 124, the ellipses are very elongated meaning that one linear polarization component is much stronger than tiie other.
• tiie polarization may be more elliptical hear tire center of the pupil, meaning that tiie two linear polarization components can be roughly comparable in magnitude.
• tiie intensity of the light ih this region df the pupil is relatively loW and contribute little to tiie total scattering signal from a small pulpe.
• the monkey detection system 190 indudes a polarizer located at or near the pupil plane 124 to preferentially rejed surface haze.
• a polarizer located at or near tiie pupil plane 124 may be designed to provide spatially- varying polarization-filtering corresponding to any known, measured, simulated, or otherwise expected polarization of light.
• a polarizer located at or near the pupil plane 124 may preferentially filter surface haze based on a kriown electric field distribution in the pupil plane 124.
• the particle detection system 100 includes a radial haze-rejection polarizer Ipcated at or near the pupil plane 124 tp preferentially reject the approximately radially- polarized surface haze illustrated in FIG. 2A.
• a radial haze- rejection polarizer 302 is described in greater detail.
• FIG. 3A is a top view of a continuous haze ⁇ fejection polarizer 3Q2, in accordance wife one of more erribddimehtsof the present disclosure.
• FIG. 3B is a top view of a segmented haze-rejection polarizer 302, in accordance with Ope or mole embodiments of the present disclosure.
• a radial haze-rejection polarizer 302 has a spatially-varying rejection direction 304 oriented radially with respect to an apex point 306 and a corresponding spatially-varying pass direction 308 oriented tangential to the ap ⁇ x point 306. Accordingly, for any particular point in the pupil plane 124, the radial haze-rejection polarizer 302 may reject (e g., absorb or reflect) sample light 112 that is radially polarized with respect to the apex point 306 and pass sample light 112 that is tangentially polarized to the apex point 306 (e g., orthogonal to toe radial rejection direction 304),
• the apex point 306 may correspond to ariy point in the plane of toe haze-rejection polarizer 302.
• the apex point 306 may be located on toe haze-rejection polarizer 302 as illustrated in FIGS. 3A and 3B.
• the apex point 306 may correspond to a point outside toe boundaries 310 of the haze-rejection polarizer 302.
• the haze-rejection polarizer 302 is aligned in the pupil plane 124 such that toe apex point 306 coincides with toe specular reflection angle 208 (egk, a reference locationort in the pupil plane 124 corresponding to the angle of specula * reflection from the sample 108).
• a radial haze-rejection polarizer 302 may be fabricated using any technique known in the art to achieve radial polarization rejection.
• toe haze-rejection polarizes * 302 may be formed to have a continuously-varying polarization rejection angle.
• toe haze-rejetitiori polarize* * 302 illustrated in FIG. 3A may operate as a continuous haze-rejection polarizer 302.
• the haze-rejection polarizer 302 may be formed from any number of wedge-shaped segments 312 distributed across tire pupil plane 124, where each segment 312 is a linear polarizer.
• the rejection direction 304 of each segment 312 may be oriented to approximate the continuous radial haze-rejection polarizer 302 in FIG, 3A
• a segmented haze-rejection polarizer 302 may have any number of linear polarizers arranged to cover selected angular ranges such as, but net limited to, every 5°, every 10” or every 15°.
• a haze-rejection polarizer 302 may be formed from any material known in the art suitable fry filtering the illumination beam 1ti4 > Far example, UV wavelengths may be particularly useful fdr detecting small partjdes doe to relatively strong scattering of shorter wavelengths by snail particles. Accordingly, the haze-rejection polarizer 302 may be fabricated from a material having high transmission at short wa velengths such as, but not limited to alumina, quartz, fused silica, calcium fluoride, or magnesium fluoride.
• FIGS, 4A and 4B are conceptual views of the haze-rejection polarizer 302 overlaid on the scattering maps of FIGS. 2A and 2B, respectively, in accordance with brie or more embodiments of the present disdosure.
• the polarization of surface haze in the pupil plane 124 is generally radial to the apex point 306 of the haze- rejection polarizer 302 across the pupil plane 124 such that the haze-rejection polarizer 302 substantially rejects the Surface haze, !h contrast
• FIG. 46 illustrates that the polarization of particle scattering is at least partially tangential to the apex point 306 at many locations across the pupil plane 124 such that the haze-rejection polarizer 302 passes a substantial portion of the pulpe scattering
• the haze-rejection polarizer 302 may not pass ail of tie light scattered by small parades, the haze-rejection polarizer 302 may provide a good balance between rejecting unwanted surface haze and passing desired smoothiee scattering to provide a high signal to noise ratio, which may facilitate sensitive monkeye detection. Further, by passing at ⁇ east sortie light fdr a wide range of scattering angles, polarization-based pupil-plahe filtering with the haze-rejection polarizer 302 as described herein may have a limited impact on the system PSF, in contrast to aperture- based tittering techniques.
• the system PSF is generally related to the electric field distribution of light in the pupil plane 124 by a Fourier Transform operation such that blocking significant portions of the pupil plane (e g., with an aperture) may broaden the system PSF and degrade overall performance.
• FIG. 5 includes an eieciric tieid distribution 502 of p-polarized light by a sub- resolution particle and a corresponding image 504 of the sub-resolution particle, in accordance with one or more embodiments of the present disclosure.
• the image of a particle smaller than an imaging resolution of a system is gen ⁇ alty limited by the system PSF, which is Really art Airy function when the image is formed from specularly-reflected light.
• the actual PSF associated with a particle e.g., a particle PSF
• the actual image of the monkeye is Waited to ttte particular electric field distribution of light from a monkeye in the pupil plane 124 and may have a different size or shape than ttte system PSF, particularly when the image is formed from scattered light.
• the image 504 of a particle based on p-polarized spattered light is annular-shaped rather than an Airy function/which is at least partly a result of the interference pattern associated with the particular polarization distribution of light in the pupil plane 124.
• destructive interference at a central point 506 of the image 504 asSodated with the electric field distribution 502 in FIG. 5A results in deceased intensity at the central point 506 and a radial shifting of the intensity outward.
• ttte signal strength and thus the signal to rfoise ratio associated with an image of a parti tie is negatively impacted.
• the particle detection system 100 includes a phase mask located at or near the pupil plana 124 to reshape the PSF of p-polarized light scattered by sub-resolution particles.
• the phase mask may include any number of components to modity the phase of light based on the; location in the pupil plane 124. Iddssj
• foe phase mask may indude or may be characterized as having two or more segments distributed across the pupil plane 124 such that each segment adjusts foe phase of light in a different region of the pupil plane 124.
• phase plate e.g , birefringent plate, or foe like
• a compensating plate ($ r g., an optically homogenous plate
• an aperture e.g., an aperture
• a phase plate may indude, a waveplate formed from a uniaxtai crystal cut with the optic axis oriented perpendicular to foe propagation direction through foe crystal and any selected thickness to provide any selected phase retardation between orthogonal polarization components (e.g., a p-phase shift for a halfwave plate, a p/2-phase shift for a quarter-wave plate, or the like).
• FIG. 6A includes a conceptual top view of a phase mask 602 With four segments to divide the pupil into four regions (e g,, quadrants), the electric field distribution 502 associated yvith p-polarized light scattered by a sub- resolution particle, a modified electric field distribution 604 based on the phase mask 602, and foe corresponding reshaped image 606 of foe particle, in accordance with one or more embodiments of foe present disdosurie,
• foe reshaped image 606 of foe particle includes a strong central lobe 608 in contrast to foe weak signal in the central point 506 of foe image 504 in FIG 5 generated without the phase mask 602.
• the phase mask 602 indudes two overlapping half-wave plates shaped and arranged with the respective optic axes in peipehdicutar directions, in this regard, each half-wave plate may rotate the polarization of light within foe respective region of foe pupil plane 124 based on foe orientation of the optic aids.
• the phase mask 602 may indude a segment 610 formed from a half-wave plate with an optic axis along a Y direction (e.g., perpendicular to foe plane of incidence of the illumination bearn 104) to introduce a phase shift of p for light polarized along the X direction with respect to orthogonal polarizations (represented as e i9 E x ), and a Segrpent 612 tortrted from a half-wave date with an Optic aids along an X direction (eg., parallel to the plahe df incidence pf foe illurpjhatioP bearn 104) to introduce d phase Shift of p for light polarized along the y direction wifo respect to orthogonal polarizations (represented as e ⁇ £y).
• a Y direction e.g., perpendicular to foe plane of incidence of the illumination bearn 104
• phase mask 602 may ihdude a segment 614 formed from two overlapping waveplates, one oriented to introduce a phase shift of p for light polarized along the X direction and one oriented to introduce a phase sNft of p for light polarized along tile ⁇ direction, Where the combined effect is represented as e in E x>y .
• the phase mask 602 may also include a segment 616 that does not rotate the polarization of light.
• the segment 6 ⁇ 6 may indude a compensating plate famed from an optically homogenous material along die direction of propagation such that light through the segment 616 propagates along the same (or substantially the Same) optical path length as light in the other quadrants of the pupil plane 124.
• the compensating plate is formed from a material having approximately the same thickness and index of refraction as a half-wave plate in any of the other quadrants of the pupil plane 124, but without birefringence along the propagation direction, in another embodiment* the compensating plate re formed from the Same material as the half-wave plates, but cut along a different axis such that light propagating through the compensating piste does npf experience birefringence. For instance, light propagating along the optic axis of a uniaxial crystal may not experience birefringence such that the crystal may be optically homogenous for light propagating along the optic axis.
• the segment 616 may ihdude an aperture.
• a phase mask 602 may be tilted out of the pupil pi ane 124 to at least partially compensate tor optical path length differences between the segment 6l6 and the other segments (e.g., segments 602-606),
• a segmented phase mask 602 may be formed using any technique known in the art.
• the various segments e g;, segments 602-608 of FIG 8A
• the Various segments are formed from multiple stacked components such that the combined path through the slacked components provides the desired PSF reshaping.
• sleeked components may be located ih the sa(ne or different pupil planes 124.
• the paftide detection system 100 may iridude one or more relay optics to provide multiple conjugate pupil planes.
• various components associated with the phase mask 602 may be distributed between multiple conjugate pupil planes.
• foe components of the phase mask 602 may be fabricated with a thickness of a few mUlimeters or less.
• the components may be displaced slightly from the pupil plane 124 (e,g., by a few mm), they may nonetheless operate to create a strong central lobe 608 in the reshaped image 606.
• the phase mask 602 illustrated In FIG. 6A is formed from a half-wave plate cut into two portions (e,g., two half half-wave plates) rotated with respect to each other.
• a haif-wavepiate may be cut along the optic axis, where a first portion is oriented wjfo foe optic axis along the Y direction (e,g., to cover the left half of foe collection area 209 ih FIG. 6A) and a second portion is brieritedwifh foe optic axis along the X direction (e.g., to cover foe top half of foe collection area 206 in FIG. 6A).
• the segment 614 may be fdrmed from foe tvyo overlapping portions of half- waveplates with crossed optic axes.
• the phase mask 602 may be variously configured Wifo different placements of the waVepiates to achieve foe reshaped image 609 of the particle inducting a strong central lobe 608.
• the half-wave plate depicted in foe top portion of foe collection area 206 in FIG. 6A may instead be placed in the bottom portion of the collection area 206.
• foe half-wave plate depicted in foe left portion of the cbllectibh area 206 in FIG. 6A may instead be placed in foe right portion of foe collection area 206.
• phase mask 602 may include ahy number of segments distributed formed tram any combination of materials in any pattern across the pupil plane 124 so as to reshape foe PSF of light scattered from a particle.
• a segmented phase mask 602 as described herein may be formed to selectively adjust the phase of various regions of light in tile pupil plane 124 jto reshape fhe PSF of an image of foe object of interest.
• the various segments of the phase mask 602 may be selected to facilitate constructive interference at a detector 120 to provide a tight PSF that approaches foe system PSF (e g , within a selected tolerance),
• FIG 6B is a conceptual top view of a phase mask 602 including two segments to divide foe pupil into two Segments (d.g., halves), jh accordance wifo one or more embodiments of foe present disclosure.
• foe phase mask 602 may include a segment 618 formed from a half-wave plate with an optic axis along an X direction fo introduce a phase shift of p for light polarized along foe Y direction with respect to orthogonal polarizations (represented as e ⁇ Ey).
• the phase mask 602 may include a segment 620 that does not rotate the polarization of light
• the segment 620 may include a compensating plate as described abdVe with respect to FIG. 6A.
• foe segment 620 may include an aperture.
• Furfoer, as described previously herein, foe phase mask 602 may be tilted opt of foe pupil plane 124 to at least partially compensate for optical path length differences between the segment 6i8 and the segment 620.
• FIG. 6B and the associated description are provided solely for illustrative purposes and should not he interpreted as limiting.
• a phase mask 602 with two segments irndy include a half-wave plate placed in the bottom portion of the collection area 206 rather than the top portion as illustrated In in FIG. 6A.
• the design of the phase mask 602 may represent a tradeoff between an "ideaP phase mask based on a known electric field distribution assodated with particles of interest (e,g ⁇ as illustrated in FIG. 2A, or foe like) and practical design and/or manufacturing considerations. For example, it may be foe case that an ideal or otherwise desired phase mask 602 is unjustifiably expensive or difficult to manufacture. HoWeydr, it may be the case foal certain designs of foe phase mask 602 may satisfy both manufacturing and performance specifications (e g., a particle PSF having a selected shape, or the like). Accordingly, the designs of the phase mask 602 illustrated in FIGS. 6A arid 6B may represent two non-limiting examples providing different tradeoffs between performance and manufacturability.
• the design of the phase mask 602 shown in FIG. 6B may be useful in combination with a haze-rejection polarizer 302 such as the one illustrated in FIG. $.
• a haze-rejection polarizer 302 such as the one illustrated in FIG. $.
• the polarization directions of the sample light 112 scattered from the surface (e.g., surface haze) arid from the particle are approximately parallel in the left side of the pupil
• a haze-rejection polarizer 302 configured to substantiaiiy block the haze may thus also Mode a significant fraction of the light scattered by a small particle info the left side of the pupil.
• phase mask 602 shown in FIG, 6B may provide a suitable balance between performance and manufacturability and/or Cost considerations.
• FIG. 7A includes an image 702 of a silicon wafer with sub-40 nrh silica perfidies taken Without a phase mask 602, an inset induding an expanded image 704 of one of the particles, and a plot 706 illustrating a cross-section of tile expanded image 704 ⁇ in accordance witii one or more embodiments of the present disclosure.
• FIG. 7B includes ah image 708 of the silicon wafer with sub- 40 nm silica partides shown in FIG.
• phase mask 602 taken with a phase mask 602, an inset induding an expanded Image 710 ofone of the partides, and a plot 712 illustrating a cross-section of the expanded image 71Q, in accordance With one or more embodimerits of the present dtsdosure.
• the phase mask 602 induded two half-wave dates arranged substantially according to the configuration illustrated hi FIG, 6A.
• tdoitQ As illustrated in FIGS. 7A and 7B, toe image of a particle generated without a phase mask 602 as described herein has an annular shape with an intensity dip in toe center. However, incorporating the phase mask 602 as described herein tightens the PSF such that an image of a particle has a central peak and a tighter distribution of intensity arpund toe central peak.
• toe particle detection system 100 may include both toe haze ⁇ rejectioh polarizer 302 and toe phase mask 602 located in one or more conjugate pupil planes.
• FIG. 8A includes ah image 802 of a silicon Wafer with sup-40 hrn silica particles taken without a haze-rejection polarizer 302 or a phase mask 602 and a plot 804 illustrating a Cross-section of the partides, rn accordance wito one or more embodiments of the preset disclosure
• FIG. 88 indudes an image 806 of toe eilicon wafer with sub- 40 nm silica partides shown in FIG. SA taken with both a haze-rejection polarizer 302 and a phase mask 602, and a plot 808 illustrating a cross-section of the partides, in accordance with one or more embodiments of the present disclosure.
• the phase mask 602 utilized to generate the image 806 to arranged substantially according to toe demfiguration illustrated in FIG. 68.
• toe combination of toe haze-rejection polarizer 302 tor selectively rejecting surface haze arid toe phase mask 602 to reshape the PSF of light scattered by particles provides sharp peaks in the image associated with toe particles and a hijgh signal to noise ratio tor the particles ⁇ yito respect to the surface.
• FIG. 9 is a llow diagram illustrating steps performed in a method 900 to * particle detection, in accordance with one or more embodiments of toe present disclosure. Applicant notes that toe embodiments and enabling technologies described previously herein in the context of the particle detection system 100 should he interpreted to extend to method 900, it is further noted, however:, that toe method 900 is not iirfiited to the architecture Of toe partite detection system 100, [0075] In one embodiment, the method 900 indudes a step 902 of illuminating a sample with a p-poiarized illumination beam at an oblique angle along an illumination direction.
• the method 900 includes a step 904 of collecting light from the sample in response to the illumination beam in a dark-field mode with one or more collection Optics, In another embodiment, the method 900 indtedqs a step 906 of propagating the light (e g., via the collection optics) from the sample through a continuous polarizer located at a pupil plane of the one or more collection optics, where the continuous polarizer is configured to reject light with radial polarization with respect to a reference point in the pupil plane corresponding to specular reflection of the illumination beam from the sample (e g., a specular reflection angle).
• the method 900 indudes a step 908 df propagating the light from the sample th rough a phase made located at the pupil plane configured to provide different phase shifts tor light in two dr more regions of a collection area of toe pupil plane to reshape a point Spread function of light scattered from one or more partides on the sample, where the collection area corresponds to a numerical aperture of the one or more collection optics.
• toe method 900 jftdudeb a step 910 of generating a dark-field image of tile sample based on light propagating through the continuous polarizer and toe phase made in response to tire iiiumihation.
• any two components so associated can also be viewed as being “connected” or “coupled” to each other to achieve the desired functionality, and any two components capable of being so associated Cah also be viewed as being “cpyplabld * to each other to achieve the desired functionality.
• Specific examples of couplabie inductor are not limited to physically interactable and/or physically interacting components and/or wirelessly interactable and/or wirelessly interacting components and/or logically interactable and/or logically interacting components.

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