TWI809209B - 用於粒子偵測之徑向偏振器 - Google Patents
用於粒子偵測之徑向偏振器 Download PDFInfo
- Publication number
- TWI809209B TWI809209B TW108136518A TW108136518A TWI809209B TW I809209 B TWI809209 B TW I809209B TW 108136518 A TW108136518 A TW 108136518A TW 108136518 A TW108136518 A TW 108136518A TW I809209 B TWI809209 B TW I809209B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- sample
- collection
- pupil plane
- wave plate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means
- G01N15/0211—Investigating a scatter or diffraction pattern
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/473—Compensating for unwanted scatter, e.g. reliefs, marks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8848—Polarisation of light
Landscapes
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Dispersion Chemistry (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Geophysics And Detection Of Objects (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862767246P | 2018-11-14 | 2018-11-14 | |
| US62/767,246 | 2018-11-14 | ||
| US16/577,089 US10942135B2 (en) | 2018-11-14 | 2019-09-20 | Radial polarizer for particle detection |
| US16/577,089 | 2019-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202026623A TW202026623A (zh) | 2020-07-16 |
| TWI809209B true TWI809209B (zh) | 2023-07-21 |
Family
ID=70550116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108136518A TWI809209B (zh) | 2018-11-14 | 2019-10-09 | 用於粒子偵測之徑向偏振器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10942135B2 (https=) |
| JP (2) | JP7254177B2 (https=) |
| KR (1) | KR102518212B1 (https=) |
| CN (2) | CN112969910B (https=) |
| TW (1) | TWI809209B (https=) |
| WO (1) | WO2020102266A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10942135B2 (en) * | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
| US12326588B2 (en) * | 2020-01-30 | 2025-06-10 | Lawrence Livermore National Security, Llc | Polarization manipulation of free-space electromagnetic radiation fields |
| US11474437B2 (en) | 2020-04-28 | 2022-10-18 | Applied Materials Israel Ltd. | Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers |
| US11525777B2 (en) * | 2020-04-28 | 2022-12-13 | Applied Materials Israel Ltd. | Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers |
| KR20220023874A (ko) | 2020-08-20 | 2022-03-03 | 삼성디스플레이 주식회사 | 표시 장치 광학 성능 테스트용 광학 검사 기기 및 이를 이용한 광학 검사 방법 |
| US11264200B1 (en) * | 2020-09-23 | 2022-03-01 | Fei Company | Lamella alignment based on a reconstructed volume |
| US11879853B2 (en) * | 2021-02-19 | 2024-01-23 | Kla Corporation | Continuous degenerate elliptical retarder for sensitive particle detection |
| US12322620B2 (en) | 2021-12-14 | 2025-06-03 | Kla Corporation | Reflective waveplates for pupil polarization filtering |
| US20250035563A1 (en) * | 2023-07-25 | 2025-01-30 | Samsung Electronics Co., Ltd. | Semiconductor measurement device |
| US12535431B2 (en) | 2024-02-20 | 2026-01-27 | Kla Corporation | Sample inspection with multiple measurement modes |
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| JP2012078802A (ja) * | 2010-10-01 | 2012-04-19 | Carl Zeiss Microimaging Gmbh | 顕微鏡および顕微鏡検査法 |
| TW201423087A (zh) * | 2012-11-09 | 2014-06-16 | Kla Tencor Corp | 偵測晶圓中裂痕的系統與方法 |
| JP2014222239A (ja) * | 2009-07-22 | 2014-11-27 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | リング状照射を備える暗視野検査システム |
| WO2018128995A1 (en) * | 2017-01-05 | 2018-07-12 | Kla-Tencor Corporation | Systems and methods for defect material classification |
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| US3758201A (en) | 1971-07-15 | 1973-09-11 | American Optical Corp | Optical system for improved eye refraction |
| US5286313A (en) | 1991-10-31 | 1994-02-15 | Surface Combustion, Inc. | Process control system using polarizing interferometer |
| US5426506A (en) | 1993-03-22 | 1995-06-20 | The University Of Chicago | Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics |
| DE69528866T2 (de) | 1994-08-12 | 2003-03-27 | Matsushita Electric Industrial Co., Ltd. | Optischer Sensor |
| US6288780B1 (en) | 1995-06-06 | 2001-09-11 | Kla-Tencor Technologies Corp. | High throughput brightfield/darkfield wafer inspection system using advanced optical techniques |
| JP3370487B2 (ja) * | 1995-07-25 | 2003-01-27 | ペンタックス株式会社 | 情報読取装置 |
| DE19535392A1 (de) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit |
| FR2758890B1 (fr) | 1997-01-29 | 1999-02-26 | Thomson Multimedia Sa | Dispositif optique de polarisation |
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| US6281993B1 (en) * | 1998-03-30 | 2001-08-28 | International Business Machines Corporation | Phase shifting element for optical information processing storing systems |
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| DE10124474A1 (de) | 2001-05-19 | 2002-11-21 | Zeiss Carl | Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens |
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| EP2976679B1 (en) * | 2013-03-20 | 2020-02-19 | ASML Netherlands B.V. | Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method |
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| JP6273162B2 (ja) * | 2014-03-25 | 2018-01-31 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| JP2015206642A (ja) * | 2014-04-18 | 2015-11-19 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
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| US9891177B2 (en) | 2014-10-03 | 2018-02-13 | Kla-Tencor Corporation | TDI sensor in a darkfield system |
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| US10067072B2 (en) * | 2015-07-10 | 2018-09-04 | Kla-Tencor Corporation | Methods and apparatus for speckle suppression in laser dark-field systems |
| WO2017123926A1 (en) * | 2016-01-13 | 2017-07-20 | Nxgen Partners Ip, Llc | System and method for multi-parameter spectroscopy |
| US10018560B2 (en) * | 2016-02-02 | 2018-07-10 | Kla-Tencor Corporation | System and method for hyperspectral imaging metrology |
| US9874526B2 (en) | 2016-03-28 | 2018-01-23 | Kla-Tencor Corporation | Methods and apparatus for polarized wafer inspection |
| FR3054152B1 (fr) * | 2016-07-25 | 2018-11-09 | Amplitude Systemes | Appareil et procede de decoupe de materiau par faisceau laser allonge non diffractif |
| JP6759053B2 (ja) | 2016-10-26 | 2020-09-23 | 株式会社ニューフレアテクノロジー | 偏光イメージ取得装置、パターン検査装置、偏光イメージ取得方法、及びパターン検査方法 |
| CN108680544B (zh) * | 2018-04-23 | 2021-04-06 | 浙江大学 | 一种结构化照明的光切片荧光显微成像方法和装置 |
| US10942135B2 (en) * | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
| US11879853B2 (en) * | 2021-02-19 | 2024-01-23 | Kla Corporation | Continuous degenerate elliptical retarder for sensitive particle detection |
-
2019
- 2019-09-20 US US16/577,089 patent/US10942135B2/en active Active
- 2019-10-09 TW TW108136518A patent/TWI809209B/zh active
- 2019-11-13 CN CN201980072825.5A patent/CN112969910B/zh active Active
- 2019-11-13 CN CN202210656064.1A patent/CN115060730B/zh active Active
- 2019-11-13 KR KR1020217017690A patent/KR102518212B1/ko active Active
- 2019-11-13 JP JP2021526292A patent/JP7254177B2/ja active Active
- 2019-11-13 WO PCT/US2019/061059 patent/WO2020102266A1/en not_active Ceased
-
2023
- 2023-03-01 JP JP2023031193A patent/JP7438424B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014222239A (ja) * | 2009-07-22 | 2014-11-27 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | リング状照射を備える暗視野検査システム |
| JP2012078802A (ja) * | 2010-10-01 | 2012-04-19 | Carl Zeiss Microimaging Gmbh | 顕微鏡および顕微鏡検査法 |
| TW201423087A (zh) * | 2012-11-09 | 2014-06-16 | Kla Tencor Corp | 偵測晶圓中裂痕的系統與方法 |
| WO2018128995A1 (en) * | 2017-01-05 | 2018-07-12 | Kla-Tencor Corporation | Systems and methods for defect material classification |
Also Published As
| Publication number | Publication date |
|---|---|
| US10942135B2 (en) | 2021-03-09 |
| KR102518212B1 (ko) | 2023-04-04 |
| CN115060730A (zh) | 2022-09-16 |
| JP7254177B2 (ja) | 2023-04-07 |
| KR20210076161A (ko) | 2021-06-23 |
| CN112969910B (zh) | 2022-06-17 |
| CN112969910A (zh) | 2021-06-15 |
| JP2023075201A (ja) | 2023-05-30 |
| JP2022509599A (ja) | 2022-01-21 |
| US20200150054A1 (en) | 2020-05-14 |
| JP7438424B2 (ja) | 2024-02-26 |
| WO2020102266A1 (en) | 2020-05-22 |
| CN115060730B (zh) | 2024-10-18 |
| TW202026623A (zh) | 2020-07-16 |
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