TWI809209B - 用於粒子偵測之徑向偏振器 - Google Patents

用於粒子偵測之徑向偏振器 Download PDF

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Publication number
TWI809209B
TWI809209B TW108136518A TW108136518A TWI809209B TW I809209 B TWI809209 B TW I809209B TW 108136518 A TW108136518 A TW 108136518A TW 108136518 A TW108136518 A TW 108136518A TW I809209 B TWI809209 B TW I809209B
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Taiwan
Prior art keywords
light
sample
collection
pupil plane
wave plate
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TW108136518A
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English (en)
Chinese (zh)
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TW202026623A (zh
Inventor
振坤 廖
丹尼爾 卡瓦德傑夫
國衡 趙
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美商科磊股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02Investigating particle size or size distribution
    • G01N15/0205Investigating particle size or size distribution by optical means
    • G01N15/0211Investigating a scatter or diffraction pattern
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/473Compensating for unwanted scatter, e.g. reliefs, marks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N2021/8461Investigating impurities in semiconductor, e.g. Silicon
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8822Dark field detection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8848Polarisation of light

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  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Dispersion Chemistry (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Geophysics And Detection Of Objects (AREA)
TW108136518A 2018-11-14 2019-10-09 用於粒子偵測之徑向偏振器 TWI809209B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862767246P 2018-11-14 2018-11-14
US62/767,246 2018-11-14
US16/577,089 US10942135B2 (en) 2018-11-14 2019-09-20 Radial polarizer for particle detection
US16/577,089 2019-09-20

Publications (2)

Publication Number Publication Date
TW202026623A TW202026623A (zh) 2020-07-16
TWI809209B true TWI809209B (zh) 2023-07-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108136518A TWI809209B (zh) 2018-11-14 2019-10-09 用於粒子偵測之徑向偏振器

Country Status (6)

Country Link
US (1) US10942135B2 (https=)
JP (2) JP7254177B2 (https=)
KR (1) KR102518212B1 (https=)
CN (2) CN112969910B (https=)
TW (1) TWI809209B (https=)
WO (1) WO2020102266A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US12326588B2 (en) * 2020-01-30 2025-06-10 Lawrence Livermore National Security, Llc Polarization manipulation of free-space electromagnetic radiation fields
US11474437B2 (en) 2020-04-28 2022-10-18 Applied Materials Israel Ltd. Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11525777B2 (en) * 2020-04-28 2022-12-13 Applied Materials Israel Ltd. Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
KR20220023874A (ko) 2020-08-20 2022-03-03 삼성디스플레이 주식회사 표시 장치 광학 성능 테스트용 광학 검사 기기 및 이를 이용한 광학 검사 방법
US11264200B1 (en) * 2020-09-23 2022-03-01 Fei Company Lamella alignment based on a reconstructed volume
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
US12322620B2 (en) 2021-12-14 2025-06-03 Kla Corporation Reflective waveplates for pupil polarization filtering
US20250035563A1 (en) * 2023-07-25 2025-01-30 Samsung Electronics Co., Ltd. Semiconductor measurement device
US12535431B2 (en) 2024-02-20 2026-01-27 Kla Corporation Sample inspection with multiple measurement modes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012078802A (ja) * 2010-10-01 2012-04-19 Carl Zeiss Microimaging Gmbh 顕微鏡および顕微鏡検査法
TW201423087A (zh) * 2012-11-09 2014-06-16 Kla Tencor Corp 偵測晶圓中裂痕的系統與方法
JP2014222239A (ja) * 2009-07-22 2014-11-27 ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation リング状照射を備える暗視野検査システム
WO2018128995A1 (en) * 2017-01-05 2018-07-12 Kla-Tencor Corporation Systems and methods for defect material classification

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758201A (en) 1971-07-15 1973-09-11 American Optical Corp Optical system for improved eye refraction
US5286313A (en) 1991-10-31 1994-02-15 Surface Combustion, Inc. Process control system using polarizing interferometer
US5426506A (en) 1993-03-22 1995-06-20 The University Of Chicago Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics
DE69528866T2 (de) 1994-08-12 2003-03-27 Matsushita Electric Industrial Co., Ltd. Optischer Sensor
US6288780B1 (en) 1995-06-06 2001-09-11 Kla-Tencor Technologies Corp. High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
JP3370487B2 (ja) * 1995-07-25 2003-01-27 ペンタックス株式会社 情報読取装置
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
FR2758890B1 (fr) 1997-01-29 1999-02-26 Thomson Multimedia Sa Dispositif optique de polarisation
US6034776A (en) 1997-04-16 2000-03-07 The United States Of America As Represented By The Secretary Of Commerce Microroughness-blind optical scattering instrument
US6281993B1 (en) * 1998-03-30 2001-08-28 International Business Machines Corporation Phase shifting element for optical information processing storing systems
US20080198456A1 (en) 1998-07-31 2008-08-21 Colorlink, Inc. Laminated retarder stack
JP3610837B2 (ja) 1998-09-18 2005-01-19 株式会社日立製作所 試料表面の観察方法及びその装置並びに欠陥検査方法及びその装置
JP3640059B2 (ja) 1999-02-12 2005-04-20 パイオニア株式会社 収差補正装置及びこれを用いた光学装置
US6633831B2 (en) 2000-09-20 2003-10-14 Kla Tencor Technologies Methods and systems for determining a critical dimension and a thin film characteristic of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
DE10124474A1 (de) 2001-05-19 2002-11-21 Zeiss Carl Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens
WO2003075207A2 (en) 2002-03-01 2003-09-12 Planar Systems, Inc. Reflection resistant touch screens
US6924893B2 (en) 2002-05-13 2005-08-02 Marine Biological Laboratory Enhancing polarized light microscopy
JP4223769B2 (ja) 2002-08-30 2009-02-12 富士通株式会社 測定装置
JP3878107B2 (ja) * 2002-11-06 2007-02-07 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
JP4530267B2 (ja) * 2003-08-30 2010-08-25 シャープ株式会社 マルチプルビューディスプレイ
TW201834020A (zh) 2003-10-28 2018-09-16 日商尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
US7271874B2 (en) 2004-11-02 2007-09-18 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
US7728965B2 (en) * 2005-06-06 2010-06-01 Kla-Tencor Technologies Corp. Systems and methods for inspecting an edge of a specimen
JP4717112B2 (ja) 2005-06-13 2011-07-06 エーエスエムエル ネザーランズ ビー.ブイ. 偏光アナライザ、偏光センサおよびリソグラフィ装置の偏光特性を判定するための方法
US7317512B2 (en) 2005-07-11 2008-01-08 Asml Netherlands B.V. Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method
DE102006031807A1 (de) 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator
KR20080066041A (ko) 2005-11-10 2008-07-15 가부시키가이샤 니콘 조명 광학 장치, 노광 장치 및 노광 방법
US7714997B2 (en) * 2006-11-07 2010-05-11 Hitachi High-Technologies Corporation Apparatus for inspecting defects
US20090015761A1 (en) 2007-05-04 2009-01-15 Itronix Corporation Combination transparent touch panel liquid crystal display stack and methods of manufacturing same
JP2009053132A (ja) 2007-08-29 2009-03-12 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置
JP4971932B2 (ja) 2007-10-01 2012-07-11 キヤノン株式会社 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット
DE102009015393B3 (de) 2009-03-20 2010-09-02 Carl Zeiss Smt Ag Messverfahren und Messsystem zur Messung der Doppelbrechung
WO2010130673A1 (en) 2009-05-15 2010-11-18 Asml Netherlands B.V. Inspection method for lithography
JP5216752B2 (ja) * 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
EP2369413B1 (en) 2010-03-22 2021-04-07 ASML Netherlands BV Illumination system and lithographic apparatus
KR101908749B1 (ko) 2010-12-16 2018-10-16 케이엘에이-텐코 코포레이션 웨이퍼 검사
EP2976679B1 (en) * 2013-03-20 2020-02-19 ASML Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
KR101643357B1 (ko) 2013-08-26 2016-07-27 가부시키가이샤 뉴플레어 테크놀로지 촬상 장치, 검사 장치 및 검사 방법
CN103431845B (zh) * 2013-08-28 2015-08-05 北京信息科技大学 基于径向偏振光束的光学相干层析成像方法及装置
JP6273162B2 (ja) * 2014-03-25 2018-01-31 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
JP2015206642A (ja) * 2014-04-18 2015-11-19 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
FR3020684B1 (fr) * 2014-04-30 2017-05-19 Horiba Jobin Yvon Sas Systeme et procede de spectrometrie de decharge luminescente et de mesure in situ de la profondeur de gravure d'un echantillon
JP6369860B2 (ja) 2014-07-15 2018-08-08 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
US9891177B2 (en) 2014-10-03 2018-02-13 Kla-Tencor Corporation TDI sensor in a darkfield system
US10187626B2 (en) 2015-04-10 2019-01-22 The Board Of Trustees Of The Leland Stanford Junior University Apparatuses and methods for three-dimensional imaging of an object
US10067072B2 (en) * 2015-07-10 2018-09-04 Kla-Tencor Corporation Methods and apparatus for speckle suppression in laser dark-field systems
WO2017123926A1 (en) * 2016-01-13 2017-07-20 Nxgen Partners Ip, Llc System and method for multi-parameter spectroscopy
US10018560B2 (en) * 2016-02-02 2018-07-10 Kla-Tencor Corporation System and method for hyperspectral imaging metrology
US9874526B2 (en) 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection
FR3054152B1 (fr) * 2016-07-25 2018-11-09 Amplitude Systemes Appareil et procede de decoupe de materiau par faisceau laser allonge non diffractif
JP6759053B2 (ja) 2016-10-26 2020-09-23 株式会社ニューフレアテクノロジー 偏光イメージ取得装置、パターン検査装置、偏光イメージ取得方法、及びパターン検査方法
CN108680544B (zh) * 2018-04-23 2021-04-06 浙江大学 一种结构化照明的光切片荧光显微成像方法和装置
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014222239A (ja) * 2009-07-22 2014-11-27 ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation リング状照射を備える暗視野検査システム
JP2012078802A (ja) * 2010-10-01 2012-04-19 Carl Zeiss Microimaging Gmbh 顕微鏡および顕微鏡検査法
TW201423087A (zh) * 2012-11-09 2014-06-16 Kla Tencor Corp 偵測晶圓中裂痕的系統與方法
WO2018128995A1 (en) * 2017-01-05 2018-07-12 Kla-Tencor Corporation Systems and methods for defect material classification

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Publication number Publication date
US10942135B2 (en) 2021-03-09
KR102518212B1 (ko) 2023-04-04
CN115060730A (zh) 2022-09-16
JP7254177B2 (ja) 2023-04-07
KR20210076161A (ko) 2021-06-23
CN112969910B (zh) 2022-06-17
CN112969910A (zh) 2021-06-15
JP2023075201A (ja) 2023-05-30
JP2022509599A (ja) 2022-01-21
US20200150054A1 (en) 2020-05-14
JP7438424B2 (ja) 2024-02-26
WO2020102266A1 (en) 2020-05-22
CN115060730B (zh) 2024-10-18
TW202026623A (zh) 2020-07-16

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