WO2020100792A1 - ペースト組成物 - Google Patents

ペースト組成物 Download PDF

Info

Publication number
WO2020100792A1
WO2020100792A1 PCT/JP2019/044065 JP2019044065W WO2020100792A1 WO 2020100792 A1 WO2020100792 A1 WO 2020100792A1 JP 2019044065 W JP2019044065 W JP 2019044065W WO 2020100792 A1 WO2020100792 A1 WO 2020100792A1
Authority
WO
WIPO (PCT)
Prior art keywords
paste composition
inorganic
oxide
aluminum
silicon
Prior art date
Application number
PCT/JP2019/044065
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
正博 中原
マルワン ダムリン
Original Assignee
東洋アルミニウム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東洋アルミニウム株式会社 filed Critical 東洋アルミニウム株式会社
Priority to CN201980074653.5A priority Critical patent/CN112997321A/zh
Publication of WO2020100792A1 publication Critical patent/WO2020100792A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a paste composition.
  • a paste composition containing aluminum is applied to the back surface of the solar cell and the paste composition is baked to form an electrode.
  • Patent Document 1 As such a paste composition, in Patent Document 1, 30 to 70 cation mole percent of lead (Pb 2+ ), 1 to 40 cation mole percent of silicon (Si 4+ ) and 10 to 65 cation mole percent of boron (B 3+ ) are disclosed. And a paste composition using a glass frit containing 1 to 25 cation mole percent of aluminum (Al 3+ ) is disclosed.
  • Patent Document 2 discloses a paste composition containing aluminum powder, aluminum-silicon alloy powder, silicon powder, glass powder, and an organic vehicle.
  • Patent Document 3 proposes a method of suppressing warpage of a cell by using a paste composition containing an alkaline earth metal compound and Patent Document 4 containing silica.
  • the conversion efficiency of a solar cell is defined as the efficiency with which a solar cell converts light energy into electrical energy.
  • an object of the present invention is to provide a paste composition for PERC solar cells, which has a small warpage after firing and a low electric resistance value.
  • the ratio of the aluminum powder contained in the paste composition is within a predetermined numerical range, and the paste composition contains an inorganic carbonate and silica.
  • the present invention provides the following paste composition for PERC solar cells.
  • Item 1 A paste composition for a backside passivation solar cell, The paste composition contains a silicon-free glass powder, an organic vehicle, and an aluminum powder, The content of the aluminum powder in 100% by mass of the paste composition is 65 to 75% by mass, The paste composition is characterized in that, in addition to the silicon-free glass powder, it does not contain any of inorganic oxides, inorganic carbides, inorganic nitrides, inorganic nitrates, inorganic sulfates and organic metal alkoxides. .. Item 2. A back surface passivation type solar cell having an electrode obtained by firing the paste composition according to Item 1.
  • the paste composition for a PERC solar cell of the present invention has a small warpage after firing the paste composition and a low electric resistance value.
  • the PERC solar cell is configured using, for example, a silicon semiconductor substrate 1 having a thickness of 140 to 170 ⁇ m. Then, as shown in FIG. 1B, the n-type impurity layer 2 and the antireflection film 3 are preferably laminated in this order on the light-receiving surface side of the silicon semiconductor substrate 1.
  • a passivation film 4 is preferably provided on the back surface of the silicon semiconductor substrate 1 opposite to the light receiving surface.
  • a contact hole 5 is provided in the passivation film 4 by a method such as laser irradiation.
  • a layer made of the paste composition 6 is provided by a method such as coating so as to cover the passivation film 4 and the contact holes 5.
  • the back electrode 9 is formed by baking the paste composition at a high temperature, for example, 700 to 1000 ° C.
  • the aluminum contained in the paste composition 6 diffuses into the silicon semiconductor substrate 1 during firing, so that Al ⁇ is formed between the back electrode 9 and the silicon semiconductor substrate 1.
  • An alloy layer 7 of Si is formed.
  • a p + layer (BSF layer: BackSurface Field layer) 8 is formed as an impurity layer by diffusion of aluminum atoms.
  • the paste composition of the present invention is a paste composition for a backside passivation solar cell, wherein the paste composition contains a silicon-free glass powder, an organic vehicle, and an aluminum powder, and the paste composition
  • the content of the aluminum powder in 100% by mass of the product is 65 to 75% by mass
  • the paste composition contains an inorganic oxide, an inorganic carbide, an inorganic nitride, an inorganic nitrate, in addition to the silicon-free glass powder. It is characterized by containing neither an inorganic sulfate nor an organic metal alkoxide.
  • the paste composition of the present invention contains a silicon-free glass powder.
  • a silicon-free glass powder is defined as a glass powder that does not contain or contains substantially no silica (SiO 2 ) component.
  • the silicon-free glass powder is not particularly limited as long as it is a glass powder that does not contain or contains substantially no silica (SiO 2 ) component.
  • SiO 2 silica
  • one or more oxides selected from the group consisting of lead (Pb), bismuth (Bi), vanadium (V), boron (B), tin (Sn), phosphorus (P), zinc (Zn) and the like can be used. It may be the glass powder contained.
  • the silicon-free glass powder it is possible to use lead-containing glass powder or lead-free glass powder such as bismuth-based, vanadium-based or tin-phosphorus-based glass powder. Particularly, considering the influence on the human body, it is preferable to use lead-free glass powder.
  • the silicon-free glass powder in the paste composition preferably has an average particle size calculated by a laser diffraction method of 1 to 10 ⁇ m in order to reduce the risk of mask clogging during screen printing. Is more preferable.
  • the content of the silicon-free glass powder contained in the paste composition is 0.1% by mass or more in 100% by mass of the paste composition in order to secure the adhesion between the electrode and the silicon wafer after firing. It is preferably present, and more preferably 0.5% by mass or more.
  • the content of the silicon-free glass powder is preferably 10% by mass or less in 100% by mass of the paste composition, and 5% by mass is preferable. The above is more preferable.
  • Organic vehicle As the organic vehicle, a solvent prepared by dissolving various additives and a resin in a solvent may be used.
  • solvent known ones can be used, and specific examples thereof include diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether and the like.
  • an antioxidant for example, an antioxidant, a corrosion inhibitor, an antifoaming agent, a thickener, a tackfire, a coupling agent, an electrostatic imparting agent, a polymerization inhibitor, a thixotropic agent, an antisettling agent, etc.
  • an antioxidant for example, an antioxidant, a corrosion inhibitor, an antifoaming agent, a thickener, a tackfire, a coupling agent, an electrostatic imparting agent, a polymerization inhibitor, a thixotropic agent, an antisettling agent, etc.
  • polyethylene glycol ester compounds polyethylene glycol ether compounds, polyoxyethylene sorbitan ester compounds, sorbitan alkyl ester compounds, aliphatic polycarboxylic acid compounds, phosphoric acid ester compounds, amide amine salts of polyester acids, polyethylene oxide compounds. , Fatty acid amide wax and the like can be used.
  • inorganic carbonate and silica are not included as such additives.
  • Known resins can be used as the resin, ethyl cellulose, nitrocellulose, polyvinyl butyral, phenol resin, melanin resin, urea resin, xylene resin, alkyd resin, unsaturated polyester resin, acrylic resin, polyimide resin, furan resin, Thermosetting resin such as urethane resin, isocyanate compound, cyanate compound, polyethylene, polypropylene, polystyrene, ABS resin, polymethylmethacrylate, polyvinyl chloride, polyvinylidene chloride, polyvinyl acetate, polyvinyl alcohol, polyacetal, polycarbonate, polyethylene terephthalate, One or more selected from the group consisting of polybutylene terephthalate, polyphenylene oxide, polysulfone, polyimide, polyether sulfone, polyarylate, polyether ether ketone, polytetrafluoroethylene, and silicone resin can be used.
  • the content ratio of the organic vehicle contained in the paste composition of the present invention is not particularly limited, but is preferably 30 parts by mass or more and 60 parts by mass or less with respect to 100 parts by mass of aluminum powder described later. When the content ratio of the organic vehicle is within such a numerical range, good adhesiveness can be obtained when the paste composition is applied to the passivation film.
  • the shape of the aluminum particles constituting the aluminum powder is not particularly limited, and may be, for example, spherical, elliptical, amorphous, scale-like, or fibrous. Among them, if it has a spherical shape, the filling property of aluminum in the formed electrode can be improved, and the electric resistance of the electrode can be lowered, and as a result, the conversion efficiency of the solar cell can be improved. You can
  • the average particle size of the aluminum particles constituting the aluminum powder is measured by a laser diffraction method in order to prevent the aluminum powders from aggregating with each other and to improve the dispersibility of the aluminum powder in the paste composition.
  • the average particle diameter is preferably 0.1 ⁇ m or more, more preferably 1 ⁇ m or more.
  • the average particle diameter of the aluminum powder particles measured by the laser diffraction method is preferably 20 ⁇ m or less, and more preferably 15 ⁇ m or less.
  • the aluminum powder may be composed only of aluminum (preferably high-purity aluminum) or may contain an aluminum alloy.
  • Examples of the aluminum alloy include aluminum-silicon alloy and aluminum-boron alloy.
  • the content of the aluminum powder contained in the paste composition is 65 to 75% by mass, preferably 71 to 74% by mass based on 100% by mass of the paste composition. If the content of the aluminum powder is less than 65% by mass, the conversion efficiency will decrease. On the other hand, when the content of the aluminum powder exceeds 75% by mass, the warp of the solar battery cell becomes large when the paste composition is fired to form the electrode.
  • the paste composition of the present invention contains a silicon-free glass powder, an organic vehicle, and an aluminum powder as described above, in addition to the silicon-free glass powder, an inorganic carbonate, an inorganic oxide, an inorganic carbide, an inorganic nitride. It is characterized in that it does not contain any of a substance, an inorganic nitrate, an inorganic sulfate and an organic metal alkoxide.
  • the inorganic carbonate here means all known inorganic carbonates. Specifically, calcium carbonate, sodium carbonate, magnesium carbonate, barium carbonate, aluminum carbonate, potassium carbonate, scandium carbonate, zinc carbonate, silver (I) carbonate, potassium hydrogen carbonate, calcium hydrogen carbonate, strontium carbonate, cesium carbonate, carbonate Examples are iron (II), copper (II) carbonate, sodium carbonate, lead (II) carbonate, nickel (II) carbonate, beryllium carbonate, manganese (II) carbonate, lithium carbonate and rubidium carbonate.
  • the inorganic oxides here mean all known inorganic oxides. Specifically, sodium oxide, magnesium oxide, aluminum oxide, silicon oxide, potassium oxide, calcium oxide, scandium oxide, titanium oxide, vanadium oxide, chromium oxide, manganese oxide, iron oxide, cobalt oxide, nickel oxide, copper oxide, Zinc oxide, gallium oxide, germanium oxide, rubidium oxide, strontium oxide, yttrium oxide, zirconium oxide, niobium oxide, molybdenum oxide, ruthenium oxide, rhodium oxide, palladium oxide, silver oxide, cadmium oxide, indium oxide, tin oxide, antimony oxide
  • rare earth oxides such as tellurium oxide, cesium oxide, barium oxide, tantalum oxide, tungsten oxide, lead oxide, bismuth oxide, lanthanum oxide and cerium oxide.
  • inorganic carbide means all known inorganic carbides, and specific examples thereof include silicon carbide, boron carbide, and aluminum carbide.
  • inorganic nitrides are all known inorganic nitrides, and specific examples thereof include aluminum nitride, silicon nitride, gallium nitride, and boron nitride.
  • inorganic nitrates means inorganic nitrates, specifically, sodium nitrate, magnesium nitrate, aluminum nitrate, potassium nitrate, calcium nitrate, scandium nitrate, copper nitrate, zinc nitrate, strontium nitrate, cesium nitrate, barium nitrate, nitric acid.
  • Lead and bismuth nitrate can be exemplified.
  • inorganic sulfates are all known inorganic sulfates, and specific examples thereof include aluminum sulfate, barium sulfate, and magnesium sulfate.
  • organometallic alkoxide means all organometallic alkoxides, specifically, aluminum isopropoxide, aluminum butoxide, aluminum ethoxide, barium ethoxide, calcium ethoxide, magnesium ethoxide, germanium ethoxide and titanium ethoxy. Can be illustrated.
  • the paste composition of the present invention in addition to the silicon-free glass powder, inorganic carbonate, inorganic oxides, inorganic carbides, inorganic nitrides, inorganic nitrates, inorganic sulfates and organic metal alkoxide does not contain any of the composition By adopting this, warpage of the fired product after firing the paste composition is small and the electric resistance value can be lowered.
  • the paste composition of the present invention can be manufactured by a conventional method, and can be manufactured by an appropriate method such as kneading the above-mentioned silicon-free glass powder, organic vehicle, and aluminum powder.
  • the vehicle dissolved in was mixed in 100 mass% of the paste composition at a ratio shown in Table 1 below and made into a paste using a known dispersing device (disper) to obtain a paste composition.
  • a paste composition As shown in Table 1, in addition to the above three components, calcium carbonate was added for Comparative Example 5 and silica was added for Comparative Example 6 to obtain a paste composition.
  • a fired substrate which is a solar cell for evaluation, was manufactured as follows. First, a semiconductor substrate made of p-type single crystal silicon shown in FIG. 1A was prepared (substrate: 6 inches, thickness 160 ⁇ m, resistivity 2 ⁇ ⁇ cm). Subsequently, as shown in FIG. 1B, a sheet having a thickness of 0.3 to 1 ⁇ m and a thickness of 40 to 200 ⁇ / ⁇ by a vapor layer thermal diffusion method using a gasified POCl 3 (phosphorus oxychloride). The n + layer 2 was formed so as to have resistance.
  • a semiconductor substrate made of p-type single crystal silicon shown in FIG. 1A was prepared (substrate: 6 inches, thickness 160 ⁇ m, resistivity 2 ⁇ ⁇ cm).
  • FIG. 1B a sheet having a thickness of 0.3 to 1 ⁇ m and a thickness of 40 to 200 ⁇ / ⁇ by a vapor layer thermal diffusion method using a gasified POCl 3 (phosphorus oxy
  • an antireflection film 3 containing silicon nitride as a main component was formed by a plasma CVD method, and a passivation film 4 made of aluminum oxide and silicon nitride was formed on the opposite surface.
  • an IR laser having a wavelength of 1064 nm is used as a laser oscillator to form a contact hole 5 having a width D of 30 ⁇ m and a depth of 1 ⁇ m on the surface of the silicon semiconductor substrate 1 (aluminum paste printing). Part).
  • each paste composition 6 obtained in each of the above Examples and Comparative Examples covers the entire back surface (the surface on the side where the contact holes 9 are formed).
  • the silicon semiconductor substrate 1 was printed on the surface of the silicon semiconductor substrate 1 using a screen printer so as to be 0.8-0.9 g / pc. Then, it baked using the infrared belt furnace set to 800 degreeC. By this firing, as shown in FIG. 1E, the electrode layer 9 is formed, and during this firing, aluminum diffuses into the silicon semiconductor substrate 1, so that the electrode layer 9 and the silicon semiconductor substrate are diffused.
  • the Al--Si alloy layer 7 and the Al--Si alloy layer 7 were formed at the same time, and at the same time, the p + layer (BSF layer) 8 was formed as an impurity layer by diffusion of aluminum atoms.
  • the resistance of the electrode in the obtained solar battery cell was measured using a sheet resistance machine (manufactured by Napson Corporation, model number RT-70V). The amount of warpage was measured using a laser displacement meter. Also, as a performance evaluation of the BSF layer, which is the main function of the aluminum electrode, the obtained cell was immersed in hydrochloric acid heated to 50 ° C., the aluminum electrode was etched (see FIG. 1 (F)), and manufactured by Sinton Instruments. Implied Voc measurement was carried out using the Lifetime measuring instrument (WCT-120) of.
  • the electrodes of the solar battery cells manufactured using the paste compositions of the respective examples have a high Implied Voc and a sufficiently high implied Voc, as compared with those using the paste compositions of the respective comparative examples.
  • a low resistance value was obtained, and the amount of warpage could be suppressed to a low value of 2.0 mm or less.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
PCT/JP2019/044065 2018-11-12 2019-11-11 ペースト組成物 WO2020100792A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201980074653.5A CN112997321A (zh) 2018-11-12 2019-11-11 糊料组合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018211940A JP2020080341A (ja) 2018-11-12 2018-11-12 ペースト組成物
JP2018-211940 2018-11-12

Publications (1)

Publication Number Publication Date
WO2020100792A1 true WO2020100792A1 (ja) 2020-05-22

Family

ID=70732101

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/044065 WO2020100792A1 (ja) 2018-11-12 2019-11-11 ペースト組成物

Country Status (3)

Country Link
JP (1) JP2020080341A (zh)
CN (1) CN112997321A (zh)
WO (1) WO2020100792A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213284A (ja) * 2015-05-01 2016-12-15 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物
JP2017218335A (ja) * 2016-06-03 2017-12-14 旭硝子株式会社 ガラス、導電ペーストおよび太陽電池
JP2017222543A (ja) * 2016-06-16 2017-12-21 旭硝子株式会社 ガラス粉末、導電ペーストおよび太陽電池
CN107673623A (zh) * 2017-08-28 2018-02-09 广州市儒兴科技开发有限公司 一种双面perc铝浆用玻璃粉及其制备方法
JP2018074078A (ja) * 2016-11-02 2018-05-10 東洋アルミニウム株式会社 ペースト組成物
WO2018180441A1 (ja) * 2017-03-27 2018-10-04 東洋アルミニウム株式会社 太陽電池用ペースト組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039491B2 (ja) * 2017-01-23 2022-03-22 東洋アルミニウム株式会社 太陽電池用ペースト組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213284A (ja) * 2015-05-01 2016-12-15 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物
JP2017218335A (ja) * 2016-06-03 2017-12-14 旭硝子株式会社 ガラス、導電ペーストおよび太陽電池
JP2017222543A (ja) * 2016-06-16 2017-12-21 旭硝子株式会社 ガラス粉末、導電ペーストおよび太陽電池
JP2018074078A (ja) * 2016-11-02 2018-05-10 東洋アルミニウム株式会社 ペースト組成物
WO2018180441A1 (ja) * 2017-03-27 2018-10-04 東洋アルミニウム株式会社 太陽電池用ペースト組成物
CN107673623A (zh) * 2017-08-28 2018-02-09 广州市儒兴科技开发有限公司 一种双面perc铝浆用玻璃粉及其制备方法

Also Published As

Publication number Publication date
CN112997321A (zh) 2021-06-18
JP2020080341A (ja) 2020-05-28

Similar Documents

Publication Publication Date Title
TWI667218B (zh) PERC type aluminum paste composition for solar cells
JP5422798B2 (ja) アルミニウム−ボロン太陽電池コンタクト
EP2418656B1 (en) Aluminium paste and solar cell using the same
JP5853541B2 (ja) 太陽電池集電電極形成用導電性組成物および太陽電池セル
CN110462845B (zh) 太阳能电池用膏状组合物
WO2018135430A1 (ja) 太陽電池用ペースト組成物
CN110663119B (zh) 太阳能电池用膏状组合物
CN108022672B (zh) 膏状组合物
JP6896506B2 (ja) 太陽電池用ペースト組成物
JP5338846B2 (ja) 太陽電池集電電極形成方法、太陽電池セルおよび太陽電池モジュール
US20140137937A1 (en) Etching composition and its use in a method of making a photovoltaic cell
WO2020100792A1 (ja) ペースト組成物
JP2014078594A (ja) ペースト組成物と太陽電池
JP2007234625A (ja) 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
JP2008159912A (ja) 光電変換素子用導電性ペーストの作製方法、光電変換素子、および光電変換素子の作製方法
WO2016193209A1 (en) Conductive paste and process for forming an electrode on a p-type emitter on an n-type base semiconductor substrate
JP6825948B2 (ja) 太陽電池用ペースト組成物
JP2022074097A (ja) 太陽電池セルの電極形成方法
JP2012243865A (ja) 太陽電池集電電極形成用導電性組成物および太陽電池セル
JP2012238754A (ja) 太陽電池集電電極形成用導電性組成物および太陽電池セル
KR20190066157A (ko) 태양전지
CN112204676A (zh) 导电性糊剂及太阳能电池
JP2013214594A (ja) 太陽電池集電電極形成用導電性組成物、これを用いる太陽電池セル及び太陽電池モジュール

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19885478

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19885478

Country of ref document: EP

Kind code of ref document: A1