WO2020093928A1 - 清洗方法及清洗设备 - Google Patents

清洗方法及清洗设备 Download PDF

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Publication number
WO2020093928A1
WO2020093928A1 PCT/CN2019/114742 CN2019114742W WO2020093928A1 WO 2020093928 A1 WO2020093928 A1 WO 2020093928A1 CN 2019114742 W CN2019114742 W CN 2019114742W WO 2020093928 A1 WO2020093928 A1 WO 2020093928A1
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Prior art keywords
cleaning
wafer
stage
rotation speed
cleaning stage
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PCT/CN2019/114742
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English (en)
French (fr)
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陈洁
刘效岩
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北京北方华创微电子装备有限公司
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Publication of WO2020093928A1 publication Critical patent/WO2020093928A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the invention relates to the field of semiconductor technology, in particular, to a cleaning method and cleaning equipment.
  • the cleaning process using DHF (dilute hydrofluoric acid) chemical solution has a wide range of applications, mainly used in epitaxial processes, etc.
  • DHF chemical solution can remove the oxide layer on the surface of the silicon wafer, but after cleaning, the exposed silicon
  • the surface of the wafer is a hydrophobic interface, and the tension of the hydrophobic interface is easy to produce water marks and particles.
  • IPA iso-Propyl alcohol
  • the cleaning process using IPA chemical liquid is mainly applied to the tank cleaning machine.
  • the existing tank cleaning machine first heats the IPA chemical liquid to 82.7 °C, and the chemical liquid will vaporize after reaching this temperature, and then make it directly It falls on the silicon wafer, so that the silicon wafer can be cleaned.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a cleaning method and cleaning equipment, which can not only effectively reduce water marks and particles on the wafer surface, improve the cleaning effect, but also improve the process safety ,reduce costs.
  • a cleaning method including:
  • the first cleaning step is used to remove impurities on the surface of the wafer
  • the second cleaning step is divided into multiple cleaning stages, the wafer rotation speeds used in each cleaning stage are different, and the preset cleaning fluid flow is used in each cleaning stage to reduce water marks and particles on the surface of the wafer .
  • the rotation speeds of the wafers used in the plurality of cleaning stages are gradually increased in time sequence.
  • the second cleaning step is divided into three cleaning stages, namely a first cleaning stage, a second cleaning stage, and a third cleaning stage, where,
  • the wafer rotation speed used in the second cleaning stage is 5-8 times the wafer rotation speed used in the first cleaning stage
  • the rotation speed of the wafer used in the third cleaning stage is 8-24 times the rotation speed of the wafer used in the second cleaning stage.
  • the value range of the wafer rotation speed used in the first cleaning stage is 10-30 rpm / min; the value range of the wafer rotation speed used in the second cleaning stage is 50-100 rpm / min; the third The value range of the wafer rotation speed used in the cleaning stage is 800-1200rpm / min.
  • the process time ratio of the first cleaning stage, the second cleaning stage, and the third cleaning stage is 1: 2: 1.
  • the process time of the first cleaning stage ranges from 2-6s; the process time of the second cleaning stage ranges from 4-12s; and the process time of the third cleaning stage
  • the value range is 2-6s.
  • the flow rate of the cleaning liquid used in each cleaning stage is the same.
  • the flow rate of the cleaning liquid ranges from 0.1 to 0.3 L / min.
  • the first cleaning step further includes:
  • the first sub-step is used to remove the oxide film on the surface of the wafer
  • the second sub-step is used to remove reaction products and waste liquid remaining on the surface of the wafer and form a liquid film on the surface of the wafer.
  • the cleaning liquid includes IPA chemical liquid.
  • the method further includes:
  • the drying step is used to dry the surface of the wafer.
  • the present invention also provides a cleaning device, wherein the cleaning device is a single-chip cleaning device, which is used to clean the wafer surface using the above-described cleaning method provided by the present invention;
  • the single-chip cleaning device includes A carrier device that carries a wafer and drives the wafer to rotate, and a spray device that sprays a cleaning liquid toward the surface of the wafer.
  • the second cleaning step is divided into a plurality of cleaning stages, and the wafer rotation speeds used in each cleaning stage are different, and the preset cleaning liquid flow rate is adopted in each cleaning stage , Can make the thickness of the liquid film formed on the wafer surface meet the requirements, thereby not only improving the hydrophobicity of the wafer surface, reducing water marks and particles on the wafer surface, and thus improving the cleaning effect; and, by adjusting the liquid flow rate, the process can be improved Security, reduce costs.
  • FIG. 1 is a flowchart of a cleaning method provided by the present invention.
  • a cleaning method provided by an embodiment of the present invention includes:
  • the first cleaning step is used to remove impurities on the surface of the wafer.
  • the second cleaning step is divided into multiple cleaning stages.
  • the wafer rotation speeds used in each cleaning stage are different.
  • the preset cleaning fluid flow is used in each cleaning stage to reduce water marks and particles on the surface of the wafer.
  • the wafer rotation speed refers to the speed of the wafer rotating around the central axis perpendicular to the surface where the wafer is located during the cleaning process.
  • the flow rate of the cleaning liquid refers to the flow rate of spraying the cleaning liquid toward the wafer surface during the cleaning process.
  • the cleaning method is to heat the IPA chemical liquid, so that the vaporized chemical liquid directly falls on the wafer surface, and there is no adjustment to the wafer rotation speed and the flow rate of the cleaning liquid, and because of the IPA process Mainly used in the tank cleaning machine.
  • the wafer speed and the flow rate of the cleaning liquid are not adjustable during the cleaning process, resulting in the inability to effectively solve the problem of water marks and particles on the wafer surface, and the cleaning effect is poor. .
  • the cleaning method provided by the embodiment of the present invention includes: after the first cleaning step is completed, when performing the second cleaning step, it is divided into multiple cleaning stages, and the wafer rotation speeds used in each cleaning stage are different At the same time, the preset cleaning liquid flow rate is used in each cleaning stage, which can make the thickness of the liquid film formed on the wafer surface meet the requirements, thereby not only improving the hydrophobicity of the wafer surface, reducing water marks and particles on the wafer surface, and thus improving Cleaning effect; moreover, by adjusting the liquid flow rate, process safety can be improved and costs can be reduced.
  • the cleaning device used in the cleaning method provided by the embodiment of the present invention is a single-chip cleaning machine, and the rotation speed of the carrier device for carrying wafers of the single-chip cleaning machine and the liquid flow output by the spray device are adjustable.
  • the cleaning liquid includes an IPA (isopropyl alcohol) chemical liquid.
  • IPA is a chemical liquid with low surface tension, which can reduce the surface tension of the surface of the silicon wafer, thereby reducing the water marks and particles on the surface of the wafer.
  • the flow rate of the preset cleaning liquid can be adopted through each cleaning stage to make it appropriately reduced. Improve process safety and reduce costs.
  • the wafer rotation speed When the wafer rotation speed is low, it is helpful to accumulate thick IPA film on the wafer surface, and when the wafer rotation speed is high, under the action of centrifugal force, it is helpful to speed up the speed of the IPA chemical solution covering the entire wafer surface, while reducing the IPA film Thickness, which can reduce the amount of IPA chemical solution remaining on the wafer surface. Based on this characteristic, by varying the rotation speed of the wafers used in each cleaning stage, the water marks and particles on the wafer surface can be effectively reduced or even eliminated, and the cleaning effect can be improved.
  • the rotation speed of the wafers used in multiple cleaning stages is gradually increased in chronological order.
  • the use of lower rotational speed can reduce the effect of centrifugal force and prevent the high-speed rotation of the IPA liquid crystal on the wafer surface to spin out, which is conducive to the original accumulation of IPA liquid on the wafer surface.
  • the rotational speed of the wafer is increased relative to the initial stage, and the effect of centrifugal force is increased, which can accelerate the speed of the IPA chemical liquid covering the entire wafer surface, thereby forming a liquid film on the wafer surface that can replace the second cleaning step.
  • the rotation speed is further increased, which can further accelerate the speed of the IPA chemical liquid covering the entire wafer surface, while reducing the thickness of the IPA film, forming a thin IPA film on the wafer surface, and preventing the IPA chemical liquid from remaining on the wafer surface In order to improve the efficiency of the subsequent drying process.
  • the second cleaning step is divided into three cleaning stages, namely: a first cleaning stage, a second cleaning stage, and a third cleaning stage, wherein the wafer rotation speed used in the second cleaning stage is adopted in the first cleaning stage
  • the wafer rotation speed is 5-8 times;
  • the wafer rotation speed used in the third cleaning stage is 8-24 times the wafer rotation speed used in the second cleaning stage.
  • the value range of the wafer rotation speed used in the first cleaning stage is 10-30 rpm / min; the value range of the wafer rotation speed used in the second cleaning stage is 50-100 rpm / min; the wafer used in the third cleaning stage
  • the speed range is 800-1200rpm / min. Within this value range, water marks and particles on the wafer surface can be effectively reduced or even eliminated, so that the cleaning effect can be improved.
  • the process time ratio of the first cleaning stage, the second cleaning stage and the third cleaning stage is 1: 2: 1.
  • the second cleaning stage serves as the main process stage to be able to change the surface tension of the wafer.
  • the value range of the process time in the first cleaning stage is 2-6s, further preferably 2-5s; the value range of the process time in the second cleaning stage is 4-12s, further preferably 5-8s
  • the value of the process time in the third cleaning stage is in the range of 2-6s, further preferably 3-6s.
  • the flow rate of the cleaning liquid used in each cleaning stage is the same. It is possible to improve process safety and reduce costs by appropriately reducing the flow rate. Further optionally, the flow rate of the cleaning liquid ranges from 0.1 to 0.3 L / min. Within this value range, a better process effect can be achieved, at the same time process safety can be ensured and costs can be reduced.
  • the above first cleaning step further includes:
  • the first sub-step is used to remove the oxide film on the surface of the wafer
  • the second sub-step is used to remove the reaction products and waste liquid remaining on the wafer surface, and form a liquid film on the wafer surface.
  • DHF dilute hydrofluoric acid
  • deionized water is used to remove the reaction products and waste liquid remaining on the surface of the wafer, and a uniform liquid film is formed on the surface of the wafer to protect the surface of the silicon wafer.
  • the cleaning method provided by the embodiment of the present invention, after the second cleaning step, further includes:
  • the drying step is used to dry the wafer surface.
  • nitrogen or other inert gas may be used to purge the wafer surface to dry the wafer surface.
  • the cleaning method provided by the embodiment of the invention divides the second cleaning step into multiple cleaning stages, and the wafer rotation speeds used in each cleaning stage are different, and each cleaning stage uses a preset cleaning liquid.
  • the flow rate can make the thickness of the liquid film formed on the wafer surface meet the requirements, which can not only improve the hydrophobicity of the wafer surface, reduce water marks and particles on the wafer surface, and thus improve the cleaning effect; and, by adjusting the liquid flow rate, it can be increased Process safety and lower costs.
  • an embodiment of the present invention further provides a cleaning device.
  • the cleaning device is a single-chip cleaning device, which is used to clean the wafer surface by using the above-described cleaning method provided by the embodiment of the present invention.
  • the above-mentioned single-chip cleaning equipment includes a carrier device for supporting the wafer and driving the wafer to rotate, and a spray device for spraying the cleaning liquid toward the surface of the wafer.
  • the rotation speed of the carrying device of the single-chip cleaning device and the liquid flow output by the spray device are adjustable, so that the wafer rotation speed used in each cleaning stage is different, and the preset cleaning liquid flow is used in each cleaning stage.
  • the cleaning device provided by the embodiment of the present invention by using the above-mentioned cleaning method provided by the present invention to clean the wafer surface, can not only improve the hydrophobicity of the wafer surface, reduce the water marks and particles on the wafer surface, and thus can improve the cleaning effect; and By adjusting the liquid flow rate, you can improve process safety and reduce costs.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

本发明提供一种清洗方法及清洗设备，该清洗方法包括：第一清洗步骤，用于去除晶片表面上的杂质；第二清洗步骤，分为多个清洗阶段，各清洗阶段所采用的晶片转速不同，同时各清洗阶段采用预设的清洗液体的流量，以减少晶片表面的水痕和颗粒。本发明提供的清洗方法，其不仅可以有效减少晶片表面水痕和颗粒，改善清洗效果，而且还可以提高工艺安全性，降低成本。

Description

清洗方法及清洗设备 技术领域
本发明涉及半导体工艺领域，具体地，涉及一种清洗方法及清洗设备。
背景技术
在半导体工艺制程中，利用DHF(稀氟氢酸)药液的清洗工艺应用范围广泛，主要应用于外延工艺等，DHF药液能够去除硅片表面的氧化层，但是清洗之后，裸露出的硅片表面为疏水界面，疏水界面的张力大易产生水痕和颗粒，为了解决该问题，通过利用异丙醇(iso-Propyl alcohol，以下简称IPA)药液来减少硅片表面上的水痕和颗粒的产生。
目前利用IPA药液的清洗工艺主要应用在槽式清洗机中，现有的槽式清洗机首先是把IPA药液加热至82.7℃，药液达到该温度后会气化，然后再使它直接落在硅片上，使硅片得以清洗干净。
但是，上述清洗方式无法有效解决晶片表面水痕和颗粒的问题，清洗效果较差。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种清洗方法及清洗设备，其不仅可以有效减少晶片表面水痕和颗粒，改善清洗效果，而且还可以提高工艺安全性，降低成本。
为实现本发明的目的而提供一种清洗方法，包括：
第一清洗步骤，用于去除晶片表面上的杂质；
第二清洗步骤，分为多个清洗阶段，各所述清洗阶段所采用的晶片转速不同，同时各所述清洗阶段采用预设的清洗液体的流量，以减少所述晶片表 面的水痕和颗粒。
可选的，多个所述清洗阶段所采用的所述晶片转速按时间的先后顺序逐渐提高。
可选的，所述第二清洗步骤分为三个清洗阶段，分别为第一清洗阶段、第二清洗阶段和第三清洗阶段，其中，
所述第二清洗阶段采用的晶片转速是所述第一清洗阶段采用的晶片转速的5-8倍；
所述第三清洗阶段采用的晶片转速是所述第二清洗阶段采用的晶片转速的8-24倍。
可选的，所述第一清洗阶段采用的晶片转速的取值范围在10-30rpm/min；所述第二清洗阶段采用的晶片转速的取值范围在50-100rpm/min；所述第三清洗阶段采用的晶片转速的取值范围在800-1200rpm/min。
可选的，所述第一清洗阶段、第二清洗阶段和第三清洗阶段的工艺时间比例为1:2:1。
可选的，所述第一清洗阶段的工艺时间的取值范围在2-6s；所述第二清洗阶段的工艺时间的取值范围在4-12s；所述第三清洗阶段的工艺时间的取值范围在2-6s。
可选的，每个所述清洗阶段采用的所述清洗液体的流量相同。
可选的，所述清洗液体的流量的取值范围在0.1-0.3L/min。
可选的，所述第一清洗步骤，进一步包括：
第一子步骤，用于去除晶片表面的氧化膜；
第二子步骤，用于去除在所述晶片表面残留的反应产物和废液，并在所述晶片表面上形成液膜。
可选的，在所述第二子步骤中，所述清洗液体包括IPA药液。
可选的，在所述第二清洗步骤之后，还包括：
干燥步骤，用于干燥所述晶片表面。
作为另一个技术方案，本发明还提供一种清洗设备，所述清洗设备为单片清洗设备，用于采用本发明提供的上述清洗方法对晶片表面进行清洗；所述单片清洗设备包括用于承载晶片，且驱动所述晶片转动的承载装置，以及用于朝向所述晶片表面喷淋清洗液体的喷淋装置。
本发明具有以下有益效果：
本发明提供的清洗方法及清洗设备的技术方案中，通过将第二清洗步骤分为多个清洗阶段，且各清洗阶段所采用的晶片转速不同，同时各清洗阶段采用预设的清洗液体的流量，可以使在晶片表面上形成的液膜厚度满足要求，从而不仅可以改善晶片表面的疏水状况，减少晶片表面的水痕和颗粒，进而可以改善清洗效果；而且，通过调节液体流量，可以提高工艺安全性，降低成本。
附图说明
图1为本发明提供的清洗方法的流程框图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的清洗方法及清洗设备进行详细描述。
请参阅图1，本发明实施例提供的清洗方法，其包括：
第一清洗步骤，用于去除晶片表面上的杂质。
第二清洗步骤，分为多个清洗阶段，各清洗阶段所采用的晶片转速不同，同时各清洗阶段采用预设的清洗液体的流量，以减少晶片表面的水痕和颗粒。
其中，晶片转速是指在清洗过程中，晶片围绕垂直于其所在表面的中心轴线作旋转运动的速度。清洗液体的流量是指在清洗过程中，朝向晶片表面 喷淋清洗液体的流量。
在现有技术中，清洗方法是在对IPA药液进行加热之后，使气化后的药液直接落在晶片表面上，而根本没有对晶片转速和清洗液体的流量进行调节，而且由于IPA工艺主要应用在槽式清洗机中，现有的槽式清洗机中晶片转速和清洗液体的流量在清洗过程中是不可调的，导致无法有效解决晶片表面水痕和颗粒的问题，清洗效果较差。
为了解决上述问题，本发明实施例提供的清洗方法，其通过在完成第一清洗步骤之后，在进行第二清洗步骤时，将其分为多个清洗阶段，各清洗阶段所采用的晶片转速不同，同时各清洗阶段采用预设的清洗液体的流量，可以使在晶片表面上形成的液膜厚度满足要求，从而不仅可以改善晶片表面的疏水状况，减少晶片表面的水痕和颗粒，进而可以改善清洗效果；而且，通过调节液体流量，可以提高工艺安全性，降低成本。
可选的，本发明实施例提供的清洗方法采用的清洗设备为单片清洗机，该单片清洗机的用于承载晶片的承载装置的转速以及喷淋装置输出的液体流量可调。
以晶片为硅片为例，可选的，在第二清洗步骤中，清洗液体包括IPA(异丙醇)药液。
IPA是一种表面张力小的化学药液，其可以减少硅片表面的表面张力，从而可以减少晶片表面的水痕和颗粒。通过实验发现，在进行第二清洗步骤时，通过将其分为多个清洗阶段，各清洗阶段所采用的晶片转速不同，同时各个清洗阶段采用预设的清洗液体的流量，可以完成消除晶片表面的水痕，同时能够将40nm的颗粒减少至100颗以下。
另外，由于IPA药液具有易燃易爆的特性，且纯度较高的IPA药液的价格较贵，因此，可以通过各清洗阶段采用预设的清洗液体的流量，使之适当减小，可以提高工艺安全性，降低成本。
当晶片转速较低时，有利于在晶片表面积累较厚的IPA薄膜，而晶片转速较高时，在离心力的作用下，有利于加快IPA药液覆盖整个晶片表面的速度，同时减小IPA薄膜的厚度，从而可以减少IPA药液在晶片表面上的残留量。基于该特性，通过将各清洗阶段所采用的晶片转速不同，可以有效减少甚至完全消除晶片表面的水痕和颗粒，进而可以改善清洗效果。
具体地，多个清洗阶段所采用的晶片转速按时间的先后顺序逐渐提高。在清洗初始阶段，通过采用较低的转速，可以减弱离心力作用，避免晶片表面上的IPA药液晶片的高速旋转而旋出，从而有利于IPA药液在晶片表面的原始积累。在清洗中间阶段，晶片转速相对于初始阶段提高，离心力作用增强，可以加快IPA药液覆盖整个晶片表面的速度，从而在晶片表面上形成能够代替第二清洗步骤中形成的液膜。在清洗后阶段，转速进一步提高，可以进一步加快IPA药液覆盖整个晶片表面的速度，同时可以减小IPA薄膜的厚度，在晶片表面形成较薄的IPA薄膜，防止IPA药液在晶片表面上残留，从而可以为后续的干燥工艺提高效率。
可选的，第二清洗步骤分为三个清洗阶段，分别为：第一清洗阶段、第二清洗阶段和第三清洗阶段，其中，第二清洗阶段采用的晶片转速是第一清洗阶段采用的晶片转速的5-8倍；第三清洗阶段采用的晶片转速是第二清洗阶段采用的晶片转速的8-24倍。这样，各清洗阶段的晶片转速之间可以保持一定的差值，从而可以使不同清洗阶段中IPA药液在晶片表面上的状态不同，以满足各个清洗阶段的要求。
进一步可选的，第一清洗阶段采用的晶片转速的取值范围在10-30rpm/min；第二清洗阶段采用的晶片转速的取值范围在50-100rpm/min；第三清洗阶段采用的晶片转速的取值范围在800-1200rpm/min。在该取值范围内，可以有效减少甚至消除晶片表面的水痕和颗粒，从而可以改善清洗效果。
可选的，第一清洗阶段、第二清洗阶段和第三清洗阶段的工艺时间比例为1:2:1。第二清洗阶段作为主工艺阶段，以能够改变晶片的表面张力。进一步可选的，第一清洗阶段的工艺时间的取值范围在2-6s，进一步优选为2-5s；第二清洗阶段的工艺时间的取值范围在4-12s，进一步优选为5-8s；第三清洗阶段的工艺时间的取值范围在2-6s，进一步优选为3-6s。
可选的，每个清洗阶段采用的清洗液体的流量相同。可以通过适当减小流量，来提高工艺安全性，降低成本。进一步可选的，清洗液体的流量的取值范围在0.1-0.3L/min。在该取值范围内，可以实现较好的工艺效果，同时可以保证工艺安全性，降低成本。
可选的，上述第一清洗步骤，进一步包括：
第一子步骤，用于去除晶片表面的氧化膜；
第二子步骤，用于去除在晶片表面残留的反应产物和废液，并在晶片表面上形成液膜。
以晶片为硅片为例，可选的，在上述第一子步骤中，采用DHF(稀氟氢酸)与硅片的氧化膜反应，以去除该氧化膜。
可选的，在上述第二子步骤中，采用去离子水去除在晶片表面残留的反应产物和废液，并在晶片表面上形成均匀地液膜，用于保护硅片表面。
本发明实施例提供的清洗方法，在第二清洗步骤之后，还包括：
干燥步骤，用于干燥晶片表面。
可选的，可以采用氮气或者其他惰性气体吹扫晶片表面，以干燥晶片表面。
综上所述，本发明实施例提供的清洗方法，其通过将第二清洗步骤分为多个清洗阶段，且各清洗阶段所采用的晶片转速不同，同时各清洗阶段采用预设的清洗液体的流量，可以使在晶片表面上形成的液膜厚度满足要求，从而不仅可以改善晶片表面的疏水状况，减少晶片表面的水痕和颗粒，进而可 以改善清洗效果；而且，通过调节液体流量，可以提高工艺安全性，降低成本。
作为另一个技术方案，本发明实施例还提供一种清洗设备，该清洗设备为单片清洗设备，用于采用本发明实施例提供的上述清洗方法对晶片表面进行清洗。上述单片清洗设备包括用于承载晶片，且驱动晶片转动的承载装置，以及用于朝向晶片表面喷淋清洗液体的喷淋装置。其中，单片清洗设备的承载装置的转速以及喷淋装置输出的液体流量可调，以使每个清洗阶段所采用的晶片转速不同，同时各个清洗阶段采用预设的清洗液体的流量。
本发明实施例提供的清洗设备，其通过采用本发明提供的上述清洗方法对晶片表面进行清洗，不仅可以改善晶片表面的疏水状况，减少晶片表面的水痕和颗粒，进而可以改善清洗效果；而且，通过调节液体流量，可以提高工艺安全性，降低成本。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种清洗方法，其特征在于，包括：
    第一清洗步骤，用于去除晶片表面上的杂质；
    第二清洗步骤，分为多个清洗阶段，各所述清洗阶段所采用的晶片转速不同，同时各所述清洗阶段采用预设的清洗液体的流量，以减少所述晶片表面的水痕和颗粒。
  2. 根据权利要求1所述的清洗方法，其特征在于，多个所述清洗阶段所采用的所述晶片转速按时间的先后顺序逐渐提高。
  3. 根据权利要求2所述的清洗方法，其特征在于，所述第二清洗步骤分为三个清洗阶段，分别为第一清洗阶段、第二清洗阶段和第三清洗阶段，其中，
    所述第二清洗阶段采用的晶片转速是所述第一清洗阶段采用的晶片转速的5-8倍；
    所述第三清洗阶段采用的晶片转速是所述第二清洗阶段采用的晶片转速的8-24倍。
  4. 根据权利要求3所述的清洗方法，其特征在于，所述第一清洗阶段采用的晶片转速的取值范围在10-30rpm/min；所述第二清洗阶段采用的晶片转速的取值范围在50-100rpm/min；所述第三清洗阶段采用的晶片转速的取值范围在800-1200rpm/min。
  5. 根据权利要求3所述的清洗方法，其特征在于，所述第一清洗阶段、第二清洗阶段和第三清洗阶段的工艺时间比例为1:2:1。
  6. 根据权利要求5所述的清洗方法，其特征在于，所述第一清洗阶段的工艺时间的取值范围在2-6s；所述第二清洗阶段的工艺时间的取值范围在4-12s；所述第三清洗阶段的工艺时间的取值范围在2-6s。
  7. 根据权利要求1-6任意一项所述的清洗方法，其特征在于，每个所述清洗阶段采用的所述清洗液体的流量相同。
  8. 根据权利要求7所述的清洗方法，其特征在于，所述清洗液体的流量的取值范围在0.1-0.3L/min。
  9. 根据权利要求1-6任意一项所述的清洗方法，其特征在于，所述第一清洗步骤，进一步包括：
    第一子步骤，用于去除晶片表面的氧化膜；
    第二子步骤，用于去除在所述晶片表面残留的反应产物和废液，并在所述晶片表面上形成液膜。
  10. 根据权利要求9所述的清洗方法，其特征在于，在所述第二子步骤中，所述清洗液体包括IPA药液。
  11. 根据权利要求1所述的清洗方法，其特征在于，在所述第二清洗步骤之后，还包括：
    干燥步骤，用于干燥所述晶片表面。
  12. 一种清洗设备，其特征在于，所述清洗设备为单片清洗设备，用于采用权利要求1-11任意一项的清洗方法对晶片表面进行清洗；所述单片清洗设备包括用于承载晶片，且驱动所述晶片转动的承载装置，以及用于朝向所述晶片表面喷淋清洗液体的喷淋装置。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713083A (zh) * 2020-12-29 2021-04-27 杭州中欣晶圆半导体股份有限公司 减少运输途中片盒对硅片表面颗粒的清洗方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114914167A (zh) * 2022-07-11 2022-08-16 广州粤芯半导体技术有限公司 清洗溶液的监测方法及其监测系统
CN115289790A (zh) * 2022-07-25 2022-11-04 浙江金瑞泓科技股份有限公司 一种去除硅片边缘水迹的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900493A (zh) * 2015-05-20 2015-09-09 中国航天科技集团公司第九研究院第七七一研究所 一种晶圆表面大深宽比tsv盲孔的清洗方法
CN105655241A (zh) * 2016-04-07 2016-06-08 上海华力微电子有限公司 单片式湿法清洗方法
CN106783538A (zh) * 2016-12-01 2017-05-31 北京七星华创电子股份有限公司 一种应用于单片清洗工艺的水痕及颗粒消除方法
US20170178892A1 (en) * 2015-12-16 2017-06-22 Kabushiki Kaisha Toshiba Substrate processing apparatus and substrate processing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340881A (ja) * 1997-06-10 1998-12-22 Sony Corp スピン乾燥方法
US6468362B1 (en) * 1999-08-25 2002-10-22 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
CN100395872C (zh) * 2005-02-23 2008-06-18 东京毅力科创株式会社 基板表面的处理方法、基板的清洗方法及程序
CN100459057C (zh) * 2006-05-22 2009-02-04 中芯国际集成电路制造(上海)有限公司 晶圆表面的清洗方法
JP2008034779A (ja) * 2006-06-27 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4762098B2 (ja) * 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
KR101266620B1 (ko) * 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
CN106856161B (zh) * 2016-12-14 2019-12-13 北京七星华创电子股份有限公司 一种采用二相流雾化清洗晶圆表面污染物的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900493A (zh) * 2015-05-20 2015-09-09 中国航天科技集团公司第九研究院第七七一研究所 一种晶圆表面大深宽比tsv盲孔的清洗方法
US20170178892A1 (en) * 2015-12-16 2017-06-22 Kabushiki Kaisha Toshiba Substrate processing apparatus and substrate processing method
CN105655241A (zh) * 2016-04-07 2016-06-08 上海华力微电子有限公司 单片式湿法清洗方法
CN106783538A (zh) * 2016-12-01 2017-05-31 北京七星华创电子股份有限公司 一种应用于单片清洗工艺的水痕及颗粒消除方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713083A (zh) * 2020-12-29 2021-04-27 杭州中欣晶圆半导体股份有限公司 减少运输途中片盒对硅片表面颗粒的清洗方法

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