WO2020093691A1 - 一种微元件的转移装置及转移方法 - Google Patents

一种微元件的转移装置及转移方法 Download PDF

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Publication number
WO2020093691A1
WO2020093691A1 PCT/CN2019/089649 CN2019089649W WO2020093691A1 WO 2020093691 A1 WO2020093691 A1 WO 2020093691A1 CN 2019089649 W CN2019089649 W CN 2019089649W WO 2020093691 A1 WO2020093691 A1 WO 2020093691A1
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Prior art keywords
micro
transfer
emitting diode
substrate
diode chip
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PCT/CN2019/089649
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English (en)
French (fr)
Inventor
刘玉春
洪志毅
李之升
王程功
李慧敏
夏继业
Original Assignee
昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Priority to KR1020217016397A priority Critical patent/KR20210089691A/ko
Publication of WO2020093691A1 publication Critical patent/WO2020093691A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67271—Sorting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present application relates to the field of display technology, in particular to a micro-element transfer device and transfer method.
  • Micro-LED chips refer to micro-LED arrays of small size integrated on a certain donor substrate (eg, donor wafer, etc.) with high density.
  • the size of Micro-LED chips is generally below 100 microns.
  • the inventor of the present application discovered during the long-term research that it is not possible to individually control each Micro-LED chip in the existing batch transfer process.
  • the technical problem mainly solved by the present application is to provide a micro-element transfer device and transfer method, which can realize the individual control of each micro-element in the batch transfer process.
  • a technical solution adopted by the present application is: to provide a micro-element transfer device, the transfer device includes: a transfer substrate; a plurality of transfer heads, located on at least one surface of the transfer substrate, the transfer head Including an adhesive member and a convex portion protruding from the at least one surface of the transfer substrate, the adhesive member is located on an end surface of the convex portion, and the adhesiveness of the adhesive member changes with temperature changes; a control circuit, The temperature of the adhesive members of the plurality of transfer heads is controlled, and the plurality of transfer heads independently adheres or releases the selected micro-elements.
  • the transfer method includes: providing a donor substrate on which a plurality of microelements are provided; using a transfer device Transferring a plurality of the micro-elements from the donor substrate, wherein the transfer device includes a transfer substrate, a plurality of transfer heads, and a control circuit; wherein, a plurality of the transfer heads are located on at least one surface of the transfer substrate, the transfer The head includes an adhesive member and a convex portion protruding from the at least one surface of the transfer substrate, the adhesive member is located on an end surface of the convex portion, and the adhesiveness of the adhesive member changes with temperature changes; A control circuit controls the temperature of the adhesive members of the plurality of transfer heads, and the plurality of transfer heads independently adhere or release the selected micro-elements.
  • the micro-element transfer device provided in the present application can control the transfer head selectively due to the use of a control circuit capable of independently controlling the temperature of the viscous member on each transfer head Absorb or release selected micro-elements to achieve individual operation of each micro-element during batch transfer; at the same time, the adhesion performance of the adhesive on the transfer head is controlled by temperature, so the structure of the transfer head can be simplified while improving the grip Take the efficiency of micro components.
  • micro-elements can also be tested for performance.
  • the corresponding control circuit controls the temperature of the adhesive member of the transfer head to invalidate the adhesion of the adhesive member In order to achieve the purpose of removing bad micro-elements during the batch transfer process.
  • FIG. 1 is a schematic structural diagram of an embodiment of a micro-element transfer device of the present application
  • FIG. 2 is a schematic structural diagram of an embodiment of the control circuit in FIG. 1;
  • FIG. 3 is a schematic structural view of an embodiment of the heating body in FIG. 2;
  • FIG. 4 is a schematic structural diagram of another embodiment of the control circuit in FIG. 1;
  • FIG. 5 is a schematic structural diagram of another embodiment of the control circuit in FIG. 1;
  • FIG. 6 is a schematic flowchart of an embodiment of a method for transferring microelements of the present application
  • FIG. 7 is a schematic structural diagram of an embodiment corresponding to steps S101-S102 in FIG. 6;
  • step S102 in FIG. 6 is a schematic flowchart of an implementation manner of step S102 in FIG. 6;
  • FIG. 9 is a schematic flowchart of an implementation manner of steps S201-S203 in FIG. 8;
  • FIG. 10 is a schematic structural diagram of an embodiment of steps S301-S306 in FIG. 9;
  • FIG. 11 is a schematic flowchart of an implementation manner of steps S201-S203 in FIG. 8;
  • FIG. 12 is a schematic structural diagram of an embodiment of steps S401-S407 in FIG. 11.
  • Micro-elements such as micro-light-emitting diode chips, refer to an array of micro-sized micro-light-emitting diode chips integrated on a certain donor substrate (eg, donor wafer, etc.) with high density.
  • the size of the micro-light-emitting diode chips is generally below 100 microns.
  • FIG. 1 is a schematic structural diagram of an embodiment of a micro-device transfer device of the present application.
  • the transfer device 1 includes a transfer substrate 10, a control circuit 12, and a plurality of transfer heads 14. It should be noted that the transfer substrate 10 mentioned in this application is on the transfer device 1 that provides the adsorption force, and is not the substrate carrying micro-elements mentioned in other patents.
  • a plurality of transfer heads 14 are located on at least one surface 100 of the transfer substrate 10.
  • the transfer head 14 can be fixedly or movably disposed on the transfer substrate 10.
  • the transfer head 14 includes an adhesive member 142 and protrudes from at least one surface 100 of the transfer substrate 10
  • the convex portion 140 and the adhesive member 142 are located on the end surface A of the convex portion 140.
  • the adhesive member 142 may be fixed, detachable, or adherable or detachable on the convex portion 140.
  • the adhesiveness of the adhesive member 142 changes with temperature.
  • the convex portion 140 may be a cylinder, a round table, or the like.
  • the control circuit 12 may be located inside or outside the transfer substrate 10 to independently control the temperature of the adhesive member 142 of each transfer head 14 to selectively control the transfer head 14 to adhere or release selected microelements.
  • the pitch between the convex portions 140 can be determined according to the pitch between the micro-elements to be adhered. The greater the pitch between the micro-elements, the greater the pitch between the convex portions 140.
  • the adhesive member 142 includes at least one of epoxy resin adhesive, polyurethane adhesive, and pressure-sensitive adhesive.
  • the viscosity of the adhesive member 142 of the foregoing material may change significantly with temperature.
  • the control circuit 12 controls the temperature of the corresponding adhesive member 142 to increase and exceed the preset temperature, thereby invalidating the adhesiveness of the adhesive member 142 to release the selected micro-elements.
  • the selection of the preset temperature is related to the type of the viscous member 142, and the preset temperature range is 70-100 degrees Celsius, for example, 70 degrees Celsius, 80 degrees Celsius, 90 degrees Celsius, 100 degrees Celsius, etc.
  • control circuit 12 can be used to further control the heating rate of the corresponding adhesive member 142.
  • the heating rate is positively related to the preset temperature, that is, the higher the preset temperature , The faster the heating rate.
  • FIG. 2 is a schematic structural diagram of an embodiment of the control circuit in FIG. 1.
  • the control circuit 12 includes a temperature control sub-circuit 120 and a convex portion 140 or a transfer head 14 except for the convex portion.
  • the temperature control sub-circuit 120 is connected to the heating body 122, and outputs electrical energy to each heating body 122.
  • the control circuit 12 includes multiple branches connected in parallel at both ends of the temperature control sub-circuit 120, each branch The circuit includes a switch 124 and a heating body 122 connected to each other. By controlling the on and off of the switch 124 on the corresponding branch circuit, each heating body 122 is independently controlled.
  • each heating body 122 is correspondingly connected to a temperature control sub-circuit 120, etc., which is not limited in this application.
  • the temperature control sub-circuit 120 may adopt any circuit design method with a temperature control function in the prior art, which will not be described in detail in this application.
  • FIG. 3 is a schematic structural diagram of an embodiment of the heating body in FIG. 2.
  • the heating body 122 includes a heat generating layer 1220, which may be a resistance wire or the like.
  • the heat generating layer 1220 is connected to the temperature control sub-circuit 120 for supplying heat to the adhesive 142 to change the temperature of the adhesive 142.
  • the heating body 122 further includes a protective layer 1222 and a thermally conductive layer 1224.
  • the protective layer 1222 may be an insulating material and wrapped around the periphery of the heat generating layer 1220.
  • the thermally conductive layer 1224 may be a metal or alloy material and wrapped in a protective layer The periphery of layer 1222.
  • the heat generating layer 1220 of the heating body 122 may be located in the convex portion 140, and the convex portion 140 may serve as a heat conduction layer 1224, between the heat generating layer 1220 and the convex portion 140 The space is separated by a protective layer 1222.
  • the heating body 122 can also be independently disposed at the external space position of the transfer head 14, which is not limited in this application.
  • FIG. 4 is a schematic structural diagram of another embodiment of the control circuit in FIG. 1.
  • the control circuit 12a provided by the present application includes a detection sub-circuit 120a and a conductor 122a disposed in the adhesive member 142, one end of the conductor 122a is connected to the detection sub-circuit 120a, the other end of the conductor 122a is exposed to the outer surface of the adhesive member 142, and the detection sub-circuit 120a Used to supply voltage / current to the conductor 122a.
  • the conductor 122a may be a metal needle or nano silver wire.
  • the transfer device 1 provided by the present application further includes a conductive temporary substrate 16. At least one surface of the conductive temporary substrate 16 is provided with a conductive layer 160.
  • the material of the conductive layer 160 may be metal. For example, aluminum foil, copper foil, etc., when the micro-element is a vertical micro LED chip, the two electrodes of the micro LED chip are located on opposite sides of the micro LED chip, the conductive temporary substrate 16 and the conductor 122a are respectively connected to the two electrodes In contact, the conductive temporary substrate 16 is used to cooperate with the conductor 122a to provide voltage / current to both ends of the micro-element for performance testing.
  • the conductive layer 160 may be a patterned structure or a non-patterned structure.
  • the conductive layer 160 When the conductive layer 160 is a patterned structure, its patterned portion is in contact with the electrode of the micro element.
  • the portion of the conductive temporary substrate 16 other than the conductive layer 160 may or may not be conductive.
  • the two electrodes of the vertical micro LED chip are located on opposite sides. One of the electrodes is metal and is opaque. When the side electrode contacts the conductive temporary substrate 16, the conductive temporary substrate 16 may be transparent Or opaque.
  • the transfer device 1 when the micro-elements are other, for example, the lateral micro light-emitting diode chip (that is, the two electrodes of the lateral micro light-emitting diode chip are on the same side), the transfer device 1 provided in this application is used in batches During the transfer of micro-elements, the performance of micro-elements can also be tested.
  • FIG. 5 is a schematic structural diagram of another embodiment of the control circuit in FIG. 1.
  • the control circuit 12b includes a first detection sub-circuit 120b, a second detection sub-circuit 124b, and a conductor 122b, one end of the conductor 122b is connected to the first detection sub-circuit 120b or the second detection sub-circuit 124b, and the other end of the conductor 122b is exposed outside the adhesive member 142 surface.
  • an adjacent group of adhesive members 142 respectively adheres to the two electrodes of the micro-element
  • an adjacent group of conductors 122b respectively contacts the two electrodes of the micro-element
  • an adjacent group of conductors 122b respectively contacts the first detection
  • the sub-circuit 120b is connected to the second detection sub-circuit 124b.
  • the first detection sub-circuit 120b and the second detection sub-circuit 124b are used in cooperation with the conductor 122b to provide test voltages / test currents to the two electrodes of the micro-element to energize the micro-element to Perform performance testing.
  • the conductive temporary substrate 16 may also be introduced as a micro-component carrier substrate. In the micro-component detection process, the conductive properties of the conductive temporary substrate 16 will not be utilized. In this embodiment, since both sides of the lateral type micro light emitting diode chip can transmit light, the conductive temporary substrate 16 on the side of the lateral type micro light emitting diode chip needs to be transparent to facilitate observation of the lateral type micro light emitting diode chip Glow effect.
  • FIG. 6 is a schematic flowchart of an embodiment of a method for transferring micro-components of the present application.
  • FIG. 7 is a schematic structural diagram of an embodiment corresponding to steps S101-S102 in FIG. 6. The method includes:
  • a donor substrate 2 is provided, and a plurality of microelements 3 are provided on the donor substrate 2.
  • the donor substrate 2 may be a donor wafer
  • the micro-device 3 may be a vertical micro-LED chip or a lateral micro-LED chip
  • the plurality of micro-devices 3 may be It is the same color (for example, red or green or blue) or different colors of micro LED chips.
  • S102 Transfer a plurality of microelements 3 from the donor substrate 2 using the transfer device 1, wherein the transfer device 1 includes a transfer substrate 10, a plurality of transfer heads 14, and a control circuit 12; wherein, a plurality of transfer heads 14 are located on at least one surface of the transfer substrate 10 100.
  • the transfer head 14 includes an adhesive member 142 and a convex portion 140 that protrudes from at least one surface of the transfer substrate 10.
  • the adhesive member 142 is located on the end surface of the convex portion 140.
  • the adhesion of the adhesive member 142 changes with temperature changes; the control circuit 12
  • the temperature of the adhesive member 142 of the plurality of transfer heads 14 is controlled, and the plurality of transfer heads 14 independently adhere or release the selected micro-elements 3.
  • FIG. 7b the specific structure of the transfer device 1 may refer to the foregoing embodiment, and details are not described herein again.
  • the transfer method provided by the present application further includes: providing a whole piece of adhesive glue, the material of the adhesive glue is the same as the material of the adhesive member 142; the transfer substrate 10 is provided with a number of transfers The side of the head 14 is close to and in contact with the adhesive glue, so that a part of the adhesive glue is adhered to the end surface of the convex portion 140 of each transfer head 14, and this part of the adhesive glue is the adhesive member 142.
  • the adhesive member 142 may be formed on the end surface of each convex portion 140 by dispensing.
  • step S102 specifically includes: setting the transfer device with a plurality of adhesive members 142 close to and contacting one electrode of the plurality of micro light-emitting diode chips, so that one adhesive member correspondingly adheres to one electrode of one micro-light emitting diode chip.
  • the micro-device when the micro-device is a lateral micro-light-emitting diode chip (for example, a front-mounted or flip-chip micro-light-emitting diode chip), the two electrodes of the micro-light-emitting diode chip are located on the same side of the micro-light-emitting diode epitaxial layer.
  • the above step S102 specifically includes: setting the transfer device with a plurality of adhesive members 142 close to and contacting the two electrodes of the plurality of micro LED chips, so that the adjacent set of first adhesive members and second adhesive members are respectively adhered Attach two electrodes of micro LED chip.
  • one adhesive member may be used to simultaneously adhere the two electrodes of the micro LED chip, or one adhesive member may be used to adhere the area between the two electrodes of the micro LED chip.
  • the method provided by the present application can also perform performance testing on a plurality of micro-elements from the donor substrate during transfer using the transfer device.
  • FIG. 8 is a schematic flowchart of an implementation manner of step S102 in FIG. 6. The above step S102 specifically includes:
  • S201 Perform performance testing on multiple microelements to obtain multiple microelements that pass performance testing and fail performance testing.
  • S202 The temperature control sub-circuit in the control circuit corresponding to the micro-element that fails the performance test controls the adhesion failure of the corresponding adhesive member to release the plurality of micro-elements that have failed the performance test.
  • S203 Transfer the multiple micro-elements that passed the performance test to a predetermined position of the target substrate.
  • FIG. 9 is a schematic flowchart of an embodiment of steps S201-S203 in FIG. 8, and FIG. 10 is a schematic structural diagram of an embodiment of steps S301-S306 in FIG.
  • the above steps S201-S203 specifically include:
  • a conductive temporary substrate 4 is provided on the other side of the plurality of micro LED chips 3a, one electrode 30a of the micro LED chip 3a is in contact with a conductor (not shown) provided in the adhesive member 142, and the other of the micro LED chip 3a One electrode 32a is in contact with the conductive temporary substrate 4.
  • the conductive temporary substrate 4 is provided with a conductive layer on the side in contact with the micro light-emitting diode chip 3a, and other parts of the conductive temporary substrate 4 may or may not be conductive.
  • the conductive temporary substrate 4 may be transparent or opaque.
  • the conductor in the adhesive member 142 and the conductive temporary substrate 4 simultaneously apply voltage / current to the two electrodes 30a, 32a of the micro light-emitting diode chip 3a.
  • the voltage and current of the conductor and the conductive temporary substrate 4 may both be provided by the detection sub-circuit. Of course, in other embodiments, they may also be provided by two different circuits.
  • the above performance detection method is an electroluminescence method. In other embodiments, other methods may also be used to detect the performance of the micro LED chip 3a, for example, the electromagnetic induction method.
  • the performance of the micro LED chip 3a satisfies the preset condition, it is determined that the performance of the micro LED chip 3a passes; otherwise, it is determined that the performance of the micro LED chip 3a fails.
  • the above performance includes any one or more performances in electrical, optical, color, etc., and all or part of the above performance may be selectively detected according to actual detection needs.
  • Each performance is set with a preset condition. Only when the performance of the micro light-emitting diode chip 3a satisfies all the preset conditions, it is judged that the performance passes.
  • S304 The temperature control sub-circuit corresponding to the micro light-emitting diode chip 3a that fails the performance test controls the adhesive failure of the corresponding adhesive member 142 to release the plurality of micro light-emitting diode chips 3a that fail the performance test; for details, see Figure 10b.
  • S305 Transfer the plurality of micro light-emitting diodes 3a that passed the performance test to a predetermined position of the target substrate 5 and release (not shown). Specifically, see FIG. 10c. After the transfer device 1 transfers the plurality of micro light-emitting diodes 3a whose detection performance passes to a predetermined position of the target substrate 5, the temperature control sub-circuit corresponding to the micro light-emitting diode chip 3a whose performance detection passes controls the adhesion of the corresponding adhesive member 142 Failure to release multiple micro LED chips 3a.
  • S306 Bonding or bonding the micro light-emitting diode chip 3a to a predetermined position, and using a solvent to remove the residual adhesive on the micro-light emitting diode chip 3a.
  • the bonding and bonding process may refer to any implementation manner in the prior art, and details are not described herein again.
  • the solvent may be an organic solvent capable of dissolving the viscous member, for example, alcohol, acetone, or the like.
  • the transfer method provided by the present application further includes filling in a predetermined position on the target substrate 5 where there is no micro light-emitting diode chip 3a.
  • FIG. 11 is a schematic flowchart of an implementation manner of steps S201-S203 in FIG. 8
  • FIG. 12 is a schematic structural diagram of an implementation manner of steps S401-S407 in FIG. 11.
  • S401 The conductor in the first adhesive member 142a and the conductor in the second adhesive member 142b simultaneously apply voltage / current to the two electrodes 30b, 32b of the micro LED chip 3b, respectively. Specifically, as shown in FIG. 12a.
  • the above performance includes any one or more performances in electrical, optical, color, etc., and all or part of the above performance may be selectively detected according to actual detection needs.
  • Each performance setting has a preset condition, and only when the performance of the micro light-emitting diode chip 3b satisfies all the preset conditions, its performance is determined to pass.
  • the above performance detection method is an electroluminescence method. In other embodiments, other methods may also be used to detect the performance of the micro light-emitting diode chip 3b, for example, an electromagnetic induction method.
  • the temperature control sub-circuit corresponding to the micro light-emitting diode chip 3b that failed the performance test controls the adhesion failure of the corresponding first adhesive member 142a and second adhesive member 142b to release the plurality of micro-light emitting diodes that failed the performance test Chip 3b; specifically, see FIG. 12b.
  • the transfer device 1 transfers the plurality of micro light-emitting diodes 3b passing the performance test to the conductive temporary substrate 4, and the temperature control sub-circuit corresponding to the micro light-emitting diode chip 3b passing the performance test controls the corresponding first adhesive member 142a,
  • the adhesion of the two adhesive members 142b fails to release the micro LED chip 3b to the conductive temporary substrate 4; specifically, refer to FIG. 12c.
  • the conductive temporary substrate 4 may also be replaced with a non-conductive temporary substrate.
  • An electrostatic or magnetic attraction device 6 is provided on the side of the conductive temporary substrate 4 away from the micro light-emitting diode chip 3b to attract the micro light-emitting diode chip 3b that passed the performance test on the conductive temporary substrate 4; specifically, please refer to FIG. 12d, In this embodiment, the electrostatic or magnetic attraction device 6 may be any one of the prior art, which will not be repeated here.
  • S406 The side of the conductive temporary substrate 4 on which the micro-light-emitting diode chip is adsorbed is directed toward the target substrate 5, and the two electrodes of the micro-light-emitting diode chip are brought into contact with a predetermined position of the target substrate 5 and then released. Specifically, see FIG. 12e. After the transfer device 1 transfers the plurality of micro light-emitting diodes 3b passing the detection performance to a predetermined position of the target substrate 5, the temperature control sub-circuit corresponding to the micro-light emitting diode chip 3b passing the performance detection controls the corresponding adhesive members 142a, 142b to stick Attachment failure to release multiple micro LED chips 3b.
  • S407 Bonding or bonding the micro light-emitting diode chip 3b to a predetermined position, and using a solvent to remove the remaining adhesive parts on the micro-light emitting diode chip 3b.
  • the bonding and bonding process may refer to any implementation manner in the prior art, and will not be described here.
  • the solvent may be an organic solvent capable of dissolving the viscous member, for example, alcohol, acetone, or the like.
  • the micro-device transfer device can independently control the transfer head adsorption or release due to the use of a control circuit that can independently control the temperature of the viscous member on each transfer head.
  • a control circuit that can independently control the temperature of the viscous member on each transfer head.
  • micro-elements can also be tested for performance.
  • the corresponding control circuit controls the temperature of the adhesive member of the transfer head to invalidate the adhesion of the adhesive member In order to achieve the purpose of removing bad micro-elements during the batch transfer process.

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Abstract

一种微元件的转移装置（1）及转移方法，所述转移装置（1）包括：转移基板（10）；若干转移头（14），位于所述转移基板（10）至少一表面，所述转移头（14）包括粘性件（142）及自所述转移基板（10）的所述至少一表面凸起的凸部（140），所述粘性件（142）位于所述凸部（140）的端面，所述粘性件（142）的粘附性随温度变化而改变；控制电路（12），控制多个所述转移头（14）的所述粘性件（142）的温度，多个所述转移头（14）独立粘附或释放选定的所述微元件。能够在批量转移过程中实现对每一颗微元件进行单独操作。

Description

一种微元件的转移装置及转移方法 技术领域
本申请涉及显示技术领域，特别是涉及一种微元件的转移装置及转移方法。
背景技术
微发光二极管(Micro-LED)芯片是指以高密度集成在一定施主基板(例如，施主晶圆等)上的微小尺寸Micro-LED阵列，Micro-LED芯片的尺寸一般在100微米以下。在制造显示器过程中，一般需要采用静电吸附、磁力吸附、范德华力作用、真空吸附等技术将Micro-LED芯片从施主基板批量转移到目标基板。
本申请的发明人在长期研究过程中发现，现有批量转移过程中无法做到对每一颗Micro-LED芯片进行单独控制。
发明内容
本申请主要解决的技术问题是提供一种微元件的转移装置及转移方法，能够在批量转移过程中实现对每一颗微元件进行单独控制。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种微元件的转移装置，所述转移装置包括：转移基板；若干转移头，位于所述转移基板至少一表面，所述转移头包括粘性件及自所述转移基板的所述至少一表面凸起的凸部，所述粘性件位于所述凸部的端面，所述粘性件的粘附性随温度变化而改变；控制电路，控制多个所述转移头的所述粘性件的温度，多个所述转移头独立粘附或释放选定的所述微元件。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种微元件的转移方法，所述转移方法包括：提供施主基板，所述施主基板上设置有多个微元件；利用转移装置将多个所述微元件从所述施主基板转移，其中，所述转移装置包括转移基板、若干转移头和控制电路；其中，若干所述转移头位于所述转移基板至少一表面，所述转移头包括粘性件及自所述转移基板的所述至少一表面凸起的凸部，所述粘性件位于所述凸部的端面，所述粘性件的粘附性随温度变化而改变；所述控制电路控制多个所述转移头的所述粘性件的温度，多个所述转移头独立粘附或释放选定的所述微元件。
本申请的有益效果是：区别于现有技术的情况，本申请所提供的微元件的 转移装置由于采用能够独立控制每个转移头上粘性件的温度的控制电路，进而可以选择性控制转移头吸附或者释放选定的微元件，以在批量转移过程中实现对每一颗微元件进行单独操作；同时转移头上粘性件的粘附性能受温度控制，因此可以简化转移头结构的同时提高抓取微元件的效率。
此外，在批量转移过程中，还可以对所有微元件进行性能测试，对于性能测试未通过的微元件，其对应的控制电路控制转移头的粘性件的温度以使该粘性件的粘附性失效，进而达到在批量转移过程中去除不良微元件的目的。
【附图说明】
图1为本申请微元件的转移装置一实施方式的结构示意图；
图2为图1中控制电路一实施方式的结构示意图；
图3为图2中加热体一实施方式的结构示意图；
图4为图1中控制电路另一实施方式的结构示意图；
图5为图1中控制电路另一实施方式的结构示意图；
图6为本申请微元件的转移方法一实施方式的流程示意图；
图7为图6中步骤S101-S102对应的一实施方式的结构示意图；
图8为图6中步骤S102一实施方式的流程示意图；
图9为图8中步骤S201-步骤S203一实施方式的流程示意图；
图10为图9中步骤S301-S306一实施方式的结构示意图；
图11为图8中步骤S201-步骤S203一实施方式的流程示意图；
图12为图11中步骤S401-S407一实施方式的结构示意图。
【具体实施方式】
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本申请保护的范围。
微元件，例如微发光二极管芯片是指以高密度集成在一定施主基板(例如，施主晶圆等)上的微小尺寸微发光二极管芯片阵列，微发光二极管芯片的尺寸一般在100微米以下。在制造显示器过程中，一般需要采用静电吸附、磁力吸附、范德华力作用、真空吸附等技术将微发光二极管芯片从施主基板批量转移 到目标基板。
请参阅图1，图1为本申请微元件的转移装置一实施方式的结构示意图，该转移装置1包括转移基板10、控制电路12和若干转移头14。需要注意的是，本申请中所提及的转移基板10为提供吸附力的转移装置1上的，而并非其他专利中所提及的承载微元件的基板。
具体地，若干转移头14位于转移基板10至少一表面100，转移头14可以固定或者活动设置于转移基板10上，转移头14包括粘性件142及自转移基板10的至少一表面100凸起的凸部140，粘性件142位于凸部140的端面A，粘性件142可以固定、或者可拆卸、或者可粘附、或者可脱落设置于凸部140上。粘性件142的粘附性随温度变化而改变。凸部140可以为圆柱、圆台等。控制电路12可以位于转移基板10的内部或者外部，用于独立控制每个转移头14的粘性件142的温度，以选择性控制转移头14粘附或释放选定的微元件。凸部140之间的间距可根据所需粘附的微元件之间的间距决定，微元件之间的间距越大，凸部140之间的间距也越大。
在一个实施例中，粘性件142包括环氧树脂胶、聚氨酯胶、压敏胶中的至少一种，上述材质的粘性件142其粘性可随温度变化发生明显变化。控制电路12控制对应的粘性件142的温度升高并超过预设温度，进而使粘性件142的粘附性失效，以释放选定的微元件。其中，预设温度的选定与粘性件142的种类相关，预设温度范围为70-100摄氏度，例如，70摄氏度、80摄氏度、90摄氏度、100摄氏度等。另外，为控制粘性件142的粘附性失效的时间，可以利用控制电路12进一步控制对应的粘性件142的升温速率，一般而言，升温速率与预设温度正相关，即预设温度越高，升温速率越快。
在另一个实施例中，请参阅图2，图2为图1中控制电路一实施方式的结构示意图，该控制电路12包括温控子电路120和设置于凸部140或转移头14除凸部140之外空间的加热体122，温控子电路120连接加热体122，且输出电能至每一个加热体122。
在一个应用场景中，为实现温控子电路120输出电能至每一个加热体122，请继续参阅图2，该控制电路12包括并联在温控子电路120两端的多个支路，每个支路包括相互连接的开关124和加热体122，通过控制对应支路上的开关124的导通和断开，以实现独立控制每一个加热体122。当然，在其他应用场景中，也可采取其他电路设计方式，例如，每一个加热体122对应连接有一个温 控子电路120等，本申请对此不作限定。另外，在本申请中温控子电路120可采用现有技术中任一具有温控功能的电路设计方式，本申请对此不作过多说明。
在另一个应用场景中，请参阅图3，图3为图2中加热体一实施方式的结构示意图。加热体122包括发热层1220，发热层1220可以是电阻丝等，该发热层1220与温控子电路120连接，用于向粘性件142提供热量以改变粘性件142的温度。在其他应用场景中，加热体122还包括保护层1222和导热层1224，保护层1222可以是绝缘材料，且包裹在发热层1220的外围，导热层1224可以是金属或者合金材料，且包裹在保护层1222的外围。在一个实施例中，当加热体122设置于凸部140中时，该加热体122的发热层1220可以位于凸部140中，凸部140可以作为导热层1224，发热层1220与凸部140之间利用保护层1222隔开。当然，在其他实施例中，该加热体122也可独立设置于转移头14的外部空间位置，本申请对此不作限定。
在另一个实施例中，在利用本申请所提供的转移装置1批量转移微元件过程中，还可对微元件进行性能检测，以发现并去除性能检测未通过的微元件。请参阅图4，图4为图1中控制电路另一实施方式的结构示意图。本申请所提供的控制电路12a包括检测子电路120a和设置于粘性件142内的导体122a，导体122a一端连接检测子电路120a，导体122a的另外一端暴露于粘性件142外表面，检测子电路120a用于向导体122a提供电压/电流。在一个应用场景中，导体122a可以是金属针或纳米银线等。
在又一个实施例中，请再次参阅图1，本申请所提供的转移装置1还包括导电临时基板16，导电临时基板16至少一表面设有导电层160，导电层160的材质可以是金属，例如铝箔、铜箔等，当微元件为垂直型微发光二极管芯片时，微发光二极管芯片的两个电极分别位于微发光二极管芯片的相对两侧，导电临时基板16和导体122a分别与两个电极接触，导电临时基板16用于与导体122a配合向微元件的两端提供电压/电流，以进行性能检测。导电层160可以为图案化结构或者非图案化结构，当导电层160为图案化结构时，其图案化的部分与微元件的电极接触。另外，在本实施例中，导电临时基板16除导电层160以外的部分可以导电也可以不导电。在本实施例中，垂直型微发光二极管芯片的两个电极位于相对两侧，其中一侧电极为金属，不透光，当该侧电极与导电临时基板16接触时，导电临时基板16可以透明，也可以不透明。
在其他实施例中，当微元件为其他，例如，横向型微发光二极管芯片(即， 横向型微发光二极管芯片的两个电极位于同一侧)时，在利用本申请所提供的转移装置1批量转移微元件过程中，同样可以对微元件进行性能检测。请参阅图5，图5为图1中控制电路另一实施方式的结构示意图。控制电路12b包括第一检测子电路120b、第二检测子电路124b、导体122b，导体122b一端连接第一检测子电路120b或第二检测子电路124b，导体122b的另外一端暴露于粘性件142外表面。在本实施例中，相邻一组粘性件142分别粘附微元件的两个电极，相邻一组导体122b分别与微元件的两个电极接触，相邻一组导体122b分别与第一检测子电路120b和第二检测子电路124b连接，第一检测子电路120b和第二检测子电路124b用于与导体122b配合向微元件的两个电极提供测试电压/测试电流，使微元件通电以进行性能检测。在本实施例中，也可以引入导电临时基板16作为微元件的承载基板，在微元件检测过程中，并不会利用到导电临时基板16的导电性能。在本实施例中，由于横向型微发光二极管芯片的两侧均可以透光，因此，位于横向型微发光二极管芯片一侧的导电临时基板16需透明，以便于观察横向型微发光二极管芯片的发光效果。
请参阅图6-图7，图6为本申请微元件的转移方法一实施方式的流程示意图，图7为图6中步骤S101-S102对应的一实施方式的结构示意图，该转移方法包括：
S101：提供施主基板2，施主基板2上设置有多个微元件3。
具体地，请参阅图7a，在本实施例中，施主基板2可以是施主晶圆，微元件3可以为垂直型微发光二极管芯片或者横向型微发光二极管芯片，且上述多个微元件3可以为同种颜色(例如，红色或绿色或蓝色)或者不同颜色的微发光二极管芯片。
S102：利用转移装置1将多个微元件3从施主基板2转移，其中，转移装置1包括转移基板10、若干转移头14和控制电路12；其中，若干转移头14位于转移基板10至少一表面100，转移头14包括粘性件142及自转移基板10的至少一表面凸起的凸部140，粘性件142位于凸部140的端面，粘性件142的粘附性随温度变化而改变；控制电路12控制多个转移头14的粘性件142的温度，多个转移头14独立粘附或释放选定的微元件3。
具体地，请参阅图7b，在本实施例中，转移装置1的具体结构可参见上述实施例，在此不再赘述。
在一个应用场景中，上述步骤S102之前，本申请所提供的转移方法还包括： 提供一整块粘合胶，该粘合胶的材质与粘性件142材质相同；将转移基板10设置有若干转移头14一侧靠近并接触粘合胶，进而使得每个转移头14的凸部140的端面粘附有部分粘合胶，该部分粘合胶即为粘性件142。当然，在其他实施例中，也可采用点胶的方式在每个凸部140的端面上形成粘性件142。
在另一个应用场景中，当微元件为垂直型微发光二极管芯片，微发光二极管芯片的两个电极分别位于微发光二极管外延层的相对两侧。上述步骤S102具体包括：将转移装置设置有多个粘性件142一侧靠近并接触多个微发光二极管芯片的一个电极，以使得一个粘性件对应粘附一个微发光二极管芯片的一个电极。
在另一个应用场景中，当微元件为横向型微发光二极管芯片(例如，正装或者倒装微发光二极管芯片)，微发光二极管芯片的两个电极位于微发光二极管外延层的同一侧。上述步骤S102具体包括：将转移装置设置有多个粘性件142一侧靠近并接触多个微发光二极管芯片的两个电极，以使得相邻的一组第一粘性件和第二粘性件分别粘附微发光二极管芯片的两个电极。当然，在其他应用场景中，也可采用一个粘性件同时粘附微发光二极管芯片的两个电极，或者，采用一个粘性件粘附微发光二极管芯片的两个电极之间的区域等。
此外，在一个是实施例中，本申请所提供的方法在利用转移装置将多个微元件从施主基板转移过程中，还可对其进行性能检测。具体地，请参阅图8，图8为图6中步骤S102一实施方式的流程示意图。上述步骤S102具体包括：
S201：对多个微元件进行性能检测，以获得性能检测通过和性能检测未通过的多个微元件。
S202：与性能检测未通过的微元件对应的控制电路中的温控子电路控制对应的粘性件粘附性失效，以释放性能检测未通过的多个微元件。
S203：将性能检测通过的多个微元件转移至目标基板的预定位置。
在一个实施例中，以微元件为垂直型微发光二极管为例，对上述步骤S201-S202做进一步详细说明。
具体地，请参阅图9和图10，图9为图8中步骤S201-步骤S203一实施方式的流程示意图，图10为图9中步骤S301-S306一实施方式的结构示意图。上述步骤S201-S203具体包括：
S301：在多个微发光二极管芯片3a的另一侧设置导电临时基板4，微发光二极管芯片3a的一个电极30a与粘性件142中设置的导体(未示意)接触，微 发光二极管芯片3a的另一个电极32a与导电临时基板4接触。具体地，请参阅图10a。在本实施例中，导电临时基板4与微发光二极管芯片3a接触的一侧设置有导电层，导电临时基板4的其他部分可以导电也可以不导电。另外，在本实施例中，由于微发光二极管芯片3a为垂直型微发光二极管芯片，导电临时基板4可以透明或者不透明。
S302：粘性件142内的导体及导电临时基板4同时施加电压/电流到微发光二极管芯片3a的两个电极30a、32a。具体地，请再次参阅图10a，在本实施例中，导体和导电临时基板4的电压/电流可以均由检测子电路提供，当然，在其他实施例中，也可由两个不同的电路提供。另外，在本实施例中，上述性能检测方式为电致发光方法，在其他实施例中，也可采用其他方式对微发光二极管芯片3a的性能进行检测，例如，电磁感应方法进行检测等
S303：若微发光二极管芯片3a性能满足预设条件，则判定微发光二极管芯片3a性能通过；否则，判定微发光二极管芯片3a性能不通过。具体地，在本实施例中，上述性能包括电学、光学、颜色等方面的任一种或者多种性能，可根据实际检测需要选择性检测上述全部或者部分性能。每一性能设置有预设条件，只有微发光二极管芯片3a的性能满足所有预设条件，才判定其性能通过。
S304：与性能检测未通过的微发光二极管芯片3a对应的温控子电路控制对应的粘性件142粘附性失效，以释放性能检测未通过的多个微发光二极管芯片3a；具体地，可参见图10b。
S305：将性能检测通过的多个微发光二极管3a转移至目标基板5的预定位置并释放(图未示)。具体地，可参见图10c。当转移装置1将检测性能通过的多个微发光二极管3a转移至目标基板5的预定位置后，与性能检测通过的微发光二极管芯片3a对应的温控子电路控制对应的粘性件142粘附性失效，以释放多个微发光二极管芯片3a。
S306：将微发光二极管芯片3a与预定位置进行邦定或者键合，并利用溶剂去除微发光二极管芯片3a上残余的粘性件。具体地，可参见图10d，在本实施例中，邦定和键合工艺可参见现有技术中任一实施方式，在此不再赘述。另外，溶剂可以是能够溶解粘性件的有机溶剂，例如，酒精、丙酮等。
另外，在本实施例中，在上述步骤S306之后，本申请所提供的转移方法还包括对目标基板5上未有微发光二极管芯片3a的预定位置进行补填。
在另一个实施例中，在一个实施例中，以微元件为横向型微发光二极管为 例，对上述步骤S201-S203做进一步详细说明。需要说明的是，在下述转移方法进行之前，转移装置1相邻的一组第一粘性件142a和第二粘性件142b分别粘附微发光二极管芯片3b的两个电极30b、32b。请参阅图11和图12，图11为图8中步骤S201-步骤S203一实施方式的流程示意图，图12为图11中步骤S401-S407一实施方式的结构示意图。
S401：第一粘性件142a内的导体和第二粘性件142b内的导体同时分别施加电压/电流到微发光二极管芯片3b的两个电极30b、32b。具体地，如图12a所示。
S402：若微发光二极管芯片3b性能满足预设条件，则判定微发光二极管芯片3b性能通过；否则，判定微发光二极管芯片3b性能不通过。具体地，在本实施例中，上述性能包括电学、光学、颜色等方面的任一种或者多种性能，可根据实际检测需要选择性检测上述全部或者部分性能。每一性能设置有预设条件，只有微发光二极管芯片3b的性能满足所有预设条件，才判定其性能通过。上述性能检测方式为电致发光方法，在其他实施例中，也可采用其他方式对微发光二极管芯片3b的性能进行检测，例如，电磁感应方法进行检测等。
S403：与性能检测未通过的微发光二极管芯片3b对应的温控子电路控制对应的第一粘性件142a、第二粘性件142b粘附性失效，以释放性能检测未通过的多个微发光二极管芯片3b；具体地，请参阅图12b。
S404：转移装置1将性能检测通过的多个微发光二极管3b转移至导电临时基板4上方，与性能检测通过的微发光二极管芯片3b对应的温控子电路控制对应的第一粘性件142a、第二粘性件142b粘附性失效，以将微发光二极管芯片3b释放至导电临时基板4；具体地，请参阅图12c。另外，在本实施例中，导电临时基板4也可更换为非导电临时基板。
S405：在导电临时基板4远离微发光二极管芯片3b一侧设置静电或磁力吸附装置6，以将性能检测通过的微发光二极管芯片3b吸附在导电临时基板4上；具体地，请参阅图12d，在本实施例中静电或磁力吸附装置6可以为现有技术中任一种，在此不再赘述。
S406：将导电临时基板4吸附有微发光二极管芯片的一侧朝向目标基板5，并将微发光二极管芯片的两个电极与目标基板5的预定位置接触后释放。具体地，可参见图12e。当转移装置1将检测性能通过的多个微发光二极管3b转移至目标基板5的预定位置后，与性能检测通过的微发光二极管芯片3b对应的温 控子电路控制对应的粘性件142a、142b粘附性失效，以释放多个微发光二极管芯片3b。
S407：将微发光二极管芯片3b与预定位置进行邦定或者键合，并利用溶剂去除微发光二极管芯片3b上残余的粘性件。具体地，可参见图12f。在本实施例中，邦定和键合工艺可参见现有技术中任一实施方式，在此不再赘述。另外，溶剂可以是能够溶解粘性件的有机溶剂，例如，酒精、丙酮等。
总而言之，区别于现有技术的情况，本申请所提供的微元件的转移装置由于采用能够独立控制每个转移头上粘性件的温度的控制电路，进而可以选择性控制转移头吸附或者释放选定的微元件，以在批量转移过程中实现对每一颗微元件进行单独操作；同时转移头上粘性件的粘附性能受温度控制，因此可以简化转移头结构的同时提高抓取微元件的效率。
此外，在批量转移过程中，还可以对所有微元件进行性能测试，对于性能测试未通过的微元件，其对应的控制电路控制转移头的粘性件的温度以使该粘性件的粘附性失效，进而达到在批量转移过程中去除不良微元件的目的。
以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (16)

  1. 一种微元件的转移装置，所述转移装置包括：
    转移基板；
    若干转移头，位于所述转移基板至少一表面，所述转移头包括粘性件及自所述转移基板的所述至少一表面凸起的凸部，所述粘性件位于所述凸部的端面，所述粘性件的粘附性随温度变化而改变；
    控制电路，控制多个所述转移头的所述粘性件的温度，多个所述转移头独立粘附或释放选定的所述微元件。
  2. 根据权利要求1所述的转移装置，其中，所述粘性件包含环氧树脂胶、聚氨酯胶、压敏胶中的至少一种，所述控制电路控制对应的所述粘性件的温度升高并超过预设温度，进而使所述粘性件的粘附性失效，以释放选定的所述微元件。
  3. 根据权利要求2所述的转移装置，其中，所述预设温度范围为70-100摄氏度。
  4. 根据权利要求1所述的转移装置，其中，所述控制电路包括温控子电路和设置于所述凸部或所述转移头除所述凸部之外空间的加热体，所述温控子电路连接所述加热体，且输出电能至每一个所述加热体。
  5. 根据权利要求4所述的转移装置，其中，所述加热体包括：
    发热层，与所述温控子电路电连接；
    保护层，包裹在所述发热层的外围，所述保护层的材质为绝缘材料；
    导热层，包裹在所述保护层的外围，所述导热层的材质为金属或合金材料。
  6. 根据权利要求5所述的转移装置，其中，所述加热体设置于所述凸部中，所述凸部为所述导热层。
  7. 根据权利要求1所述的转移装置，其中，所述控制电路包括检测子电路和设置于所述粘性件内的导体，所述导体一端连接所述检测子电路，所述导体的另外一端暴露于所述粘性件外表面，所述检测子电路用于向所述导体提供电压/电流。
  8. 根据权利要求7所述的转移装置，其中，所述导体是金属针或纳米银线。
  9. 根据权利要求7所述的转移装置，其中，所述转移装置还包括导电临时基板，所述导电临时基板至少一表面设有导电层，所述微元件为垂直型微发光二极管芯片，所述微发光二极管芯片的两个电极分别位于所述微发光二极管芯 片的相对两侧，所述导电临时基板和所述导体分别与两个所述电极接触，所述导电临时基板用于与所述导体配合向所述微元件的两端提供电压/电流，以进行性能检测。
  10. 一种微元件的转移方法，其中，所述转移方法包括：
    提供施主基板，所述施主基板上设置有多个微元件；
    利用转移装置将多个所述微元件从所述施主基板转移，其中，所述转移装置包括转移基板、若干转移头和控制电路；其中，若干所述转移头位于所述转移基板至少一表面，所述转移头包括粘性件及自所述转移基板的所述至少一表面凸起的凸部，所述粘性件位于所述凸部的端面，所述粘性件的粘附性随温度变化而改变；所述控制电路控制多个所述转移头的所述粘性件的温度，多个所述转移头独立粘附或释放选定的所述微元件。
  11. 根据权利要求10所述的转移方法，其中，所述利用转移装置将多个所述微元件从所述施主基板转移之前，所述转移方法包括：
    提供一整块粘合胶；
    将所述转移基板设置有若干所述转移头一侧靠近并接触所述粘合胶，以使得每个所述转移头的所述凸部的所述端面粘附有部分粘合胶，所述部分粘合胶即为所述粘性件。
  12. 根据权利要求10所述的转移方法，其中，所述利用转移装置将多个所述微元件从所述施主基板转移包括：
    对多个所述微元件进行性能检测，以获得性能检测通过和性能检测未通过的多个所述微元件；
    与性能检测未通过的所述微元件对应的所述控制电路中的温控子电路控制对应的所述粘性件粘附性失效，以释放性能检测未通过的多个所述微元件；
    将性能检测通过的多个所述微元件转移至目标基板的预定位置。
  13. 根据权利要求12所述的转移方法，其中，
    所述微元件为垂直型微发光二极管芯片，所述微发光二极管芯片的两个电极分别位于所述微发光二极管芯片的相对两侧；所述对多个所述微元件进行性能检测，包括：
    在多个所述微发光二极管芯片的另一侧设置导电临时基板，所述微发光二极管芯片的一个电极与所述粘性件中设置的导体接触，所述微发光二极管芯片的另一个电极与所述导电临时基板接触；
    所述粘性件内的导体及所述导电临时基板同时施加电压/电流到所述微发光二极管芯片的两个电极；
    若所述微发光二极管芯片性能满足预设条件，则判定微发光二极管芯片性能通过；否则，判定微发光二极管芯片性能不通过。
  14. 根据权利要求12所述的转移方法，其中，所述微元件为横向型微发光二极管芯片，所述微发光二极管芯片的两个电极位于所述微发光二极管芯片的同一侧；所述对多个所述微元件进行性能检测，包括：
    所述微发光二极管芯片的两个所述电极分别与相邻的第一粘性件和第二粘性件接触，所述第一粘性件内的导体和所述第二粘性件内的导体同时分别施加电压/电流到所述微发光二极管芯片的两个电极；
    若所述微发光二极管芯片性能满足预设条件，则判定所述微发光二极管芯片性能通过；否则，判定所述微发光二极管芯片性能不通过。
  15. 根据权利要求14所述的转移方法，其中，所述将性能检测通过的多个所述微元件转移至目标基板的预定位置，包括：
    所述转移装置将性能检测通过的多个所述微发光二极管转移至导电临时基板上方，与性能检测通过的微发光二极管芯片对应的温控子电路控制对应的第一粘性件、第二粘性件粘附性失效，以将微发光二极管芯片释放至所述导电临时基板；
    在所述导电临时基板远离所述微发光二极管芯片一侧设置静电或磁力吸附装置，以将性能检测通过的所述微发光二极管芯片吸附在所述导电临时基板上；
    将所述导电临时基板吸附有所述微发光二极管的一侧朝向所述目标基板，并将所述微发光二极管芯片的两个电极与所述目标基板的所述预定位置接触后释放。
  16. 根据权利要求12所述的转移方法，其中，所述将性能检测通过的多个所述微元件转移至目标基板的预定位置之后，所述转移方法还包括：
    将所述微发光二极管芯片与所述预定位置进行邦定或者键合，并利用溶剂去除所述微发光二极管芯片上残余的所述粘性件。
PCT/CN2019/089649 2018-11-06 2019-05-31 一种微元件的转移装置及转移方法 WO2020093691A1 (zh)

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