WO2020087940A1 - Led的固晶方法及喷涂装置 - Google Patents

Led的固晶方法及喷涂装置 Download PDF

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Publication number
WO2020087940A1
WO2020087940A1 PCT/CN2019/091463 CN2019091463W WO2020087940A1 WO 2020087940 A1 WO2020087940 A1 WO 2020087940A1 CN 2019091463 W CN2019091463 W CN 2019091463W WO 2020087940 A1 WO2020087940 A1 WO 2020087940A1
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Prior art keywords
led
solder paste
nozzle
pad
suspension
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PCT/CN2019/091463
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English (en)
French (fr)
Inventor
杨勇
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武汉华星光电技术有限公司
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Priority to US16/638,480 priority Critical patent/US11417795B2/en
Publication of WO2020087940A1 publication Critical patent/WO2020087940A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Definitions

  • the invention relates to the technical field of LED packaging, in particular to an LED solid crystal method and a spraying device.
  • miniLED mini Light-Emitting Diode (mini light-emitting diode)
  • the traditional solder paste coating method is generally used for soldering.
  • the coated steel mesh cannot accurately control the amount of solder paste, which causes the solid crystal chip to be tilted due to the pulling of the solder paste in the subsequent reflow process, thereby changing the light emitting direction of the chip, which in turn leads to the surface
  • the uniformity of the mixed light of the light source becomes poor.
  • the invention provides a LED solid crystal method and a spraying device to solve the existing LED solid crystal method. Since the traditional solder paste coating method is used for welding, the amount of solder paste cannot be accurately controlled, resulting in subsequent reflow soldering During the process, the solid-crystal chip is tilted by the pulling of the solder paste, which causes the light-emitting direction of the chip to change, which in turn causes the technical problem that the uniformity of the light mixing of the surface light source becomes poor.
  • the invention provides a method for fixing crystals of an LED, including:
  • a spraying device including a liquid circulation unit, a pressurized flow control unit connected to the liquid circulation unit, and a nozzle connected to the pressurized flow control unit.
  • the opening area of the nozzle is 0.5 ⁇ 0.8 times of the pad area;
  • S70 Perform a reflow soldering process on the substrate on which the LED is placed.
  • the method before the S60, the method further includes:
  • flux is sprayed on the solder paste film layer to form a soldering layer.
  • the method before the S60, the method further includes:
  • an antioxidant is sprayed on the soldering layer to form an antioxidant layer.
  • the S40 includes:
  • the liquid circulation unit includes a U-shaped tube, and the suspension liquid is passed into the U-shaped tube;
  • S402 Inject gas to both ends of the U-shaped tube to make the suspension mixed evenly.
  • the S401 before the S401, it further includes: mixing and stirring a solder paste with a low-boiling organic solvent to form the suspension.
  • the nozzle sprays the suspension liquid on the pad surface in a row-by-row or column-by-row scanning manner.
  • the steel mesh is detached from the substrate.
  • the present invention provides another LED solid crystal method, including:
  • a spraying device including a liquid circulation unit, a pressurized flow control unit connected to the liquid circulation unit, and a nozzle connected to the pressurized flow control unit;
  • S70 Perform a reflow soldering process on the substrate on which the LED is placed.
  • the method before the S60, the method further includes:
  • flux is sprayed on the solder paste film layer to form a soldering layer.
  • the method before the S60, the method further includes:
  • an antioxidant is sprayed on the soldering layer to form an antioxidant layer.
  • the S40 includes:
  • the liquid circulation unit includes a U-shaped tube, and the suspension liquid is passed into the U-shaped tube;
  • S402 Inject gas to both ends of the U-shaped tube to make the suspension mixed evenly.
  • the S40 before the S40, it further includes: mixing and stirring the solder paste with a low-boiling organic solvent to form the suspension.
  • the opening area of the nozzle is 0.5 to 0.8 times the area of the pad.
  • the vertical distance between the nozzle and the steel mesh is 1 to 5 mm.
  • the nozzle sprays the suspension liquid on the pad surface in a row-by-row or column-by-row scanning manner.
  • the steel mesh is detached from the substrate.
  • the invention also provides a spraying device, comprising: a pressurized flow control unit, a pressurized flow control unit and a nozzle; wherein the liquid circulation unit includes a U-shaped tube for carrying liquid; the pressurized flow control unit and The liquid circulation unit is connected, the pressure and flow control unit is provided with a knob and a firing pin; the nozzle is provided below the pressure and flow control unit, and is connected with the pressure and flow control unit, and the nozzle Atomization components are provided.
  • the pressurized flow control unit is disposed at the bottom of the U-shaped tube and connected to the U-shaped tube.
  • the knob is provided on the upper portion of the striker to control the opening size of the striker.
  • two ends of the U-shaped tube are oppositely provided with two gas inlets.
  • the present invention performs solder paste soldering by spraying solder paste on the pad to form a film, which can prevent the solder paste from pulling on the chip during subsequent reflow soldering to cause the chip to tilt or short circuit, in addition Avoiding the virtual welding phenomenon caused by white oil between the positive and negative electrodes of the pad can improve the luminous efficiency of the surface light source and the yield of the solid crystal operation.
  • FIG. 2 is a schematic diagram of the LED chip structure before solid crystal of the present invention.
  • FIG. 3 is a schematic structural diagram of a spraying device of the invention.
  • the present invention is directed to the existing LED solid crystal method. Since the LED and the pad are soldered by solder paste, the chip is tilted by the solder paste during the subsequent reflow soldering process, resulting in the chip's light emitting direction The change, which in turn leads to the technical problem of poor uniformity of the mixed light of the surface light source, can be solved by this embodiment.
  • the present invention provides an LED solid crystal method, including the following steps:
  • the spraying device 20 includes a liquid circulation unit 21, a pressurized flow control unit 22 connected to the liquid circulation unit 21, and a nozzle 23 connected to the pressurized flow control unit 22;
  • the substrate 11 on which the LED is placed is subjected to a reflow soldering process.
  • the solid crystal method further includes: spraying flux on the solder paste film layer 14 to form a solder layer 15, the flux To increase the adhesion between the solder paste film layer 14 and the LED chip 17; then spray an antioxidant on the soldering layer 15 to form an antioxidant layer 16, the antioxidant avoids the tin
  • the paste film layer 14 is oxidized and turns yellow.
  • the film forming method of the soldering layer 15 and the anti-oxidation layer 16 is the same as the film forming method of the solder paste film layer 14, and both can be formed by spraying through a spraying device.
  • the mesh of the steel mesh 18 is provided corresponding to the pad 13 to expose a part of the pad 13, the mesh area of the steel mesh 18 is smaller than the area of the pad 13, the original In the embodiment, the mesh area of the steel mesh 18 is half the area of the pad 13.
  • the solder paste and the low-boiling organic solvent are first mixed and stirred to form the suspension 30; then the suspension 30 is passed into the liquid circulation unit 21, specifically, the The suspension 30 is led into the U-shaped tube in the liquid circulation unit 21; after that, gas is introduced into both ends of the U-shaped tube, and the effect is achieved by blowing to make the U-shaped tube
  • the suspension 30 is mixed well.
  • the pressurization flow control unit 22 includes a knob 222 and a striker 221, and by adjusting the knob 222, the opening size of the striker 221 is controlled, thereby controlling the size of the spraying amount; the pressurization flow control unit 22
  • An infusion tube is provided inside, the infusion tube is connected with the spray head 23, and the spray pressure of the spray head 23 is controlled by the compressed air of the solenoid valve; , So that the suspension 30 in the nozzle 23 is mixed evenly.
  • the steel mesh 18 is detached from the substrate 11 and then the subsequent process is performed.
  • the vertical distance between the nozzle 23 and the steel mesh 18 is 1 to 5 mm, and the opening area of the nozzle 23 is 0.5 to 0.8 times the area of the pad 13 ,
  • the nozzle 23 is sprayed on the surface of the steel mesh 18 2 to 5 times in a row-by-row or row-by-row scanning manner, and the suspension 30 containing solder paste falls on the surface of the pad 13 and is directed toward the pad 13
  • the other unexposed part of the diffusion, after the low-boiling organic solvent in the suspension 30 volatilizes to form the solder paste film layer 14 of a specific thickness, then using the same or similar process, spray flux and antioxidant on On the solder paste film layer 14.
  • the LED chip 17 is first adhered to the solder paste film layer 14, specifically, the LED chip 17 is adhered to the surface of the anti-oxidation layer 16, so The positive and negative electrodes 171 of the LED chip 17 correspond to the positive and negative electrodes of the pad 13 respectively; afterwards, the substrate on which the LED chip 17 is placed is placed in a reflow soldering equipment to perform the reflow soldering process under high temperature conditions
  • the solder paste film layer 14 and the soldering layer 15 are heated and melted. According to the principle of liquid surface tension, the solder paste will move in the direction of area reduction.
  • solder paste When the pins of the chip are completely wrapped, the soldering layer 15 will decompose or volatilize under high temperature conditions, and the final solid crystal position of the chip will complete the reflow soldering process without significant change.
  • a copper circuit is formed on the substrate, the white oil layer covers the copper circuit, the white oil layer and the copper circuit are patterned by a yellow light process, and white oil is filled between the positive and negative electrodes of the pad,
  • the reflectivity of the substrate 11 can be increased, thereby increasing the light efficiency of the LED; the thickness of the solder paste sprayed can be estimated according to the height difference between the white oil film layer and the pad 13, so as to control the amount of solder paste and avoid virtual soldering The phenomenon occurs.
  • the present invention provides a spraying device 20 that can be used in the above-mentioned LED solid crystal operation.
  • the spraying device 20 includes a liquid circulation unit 21, a pressurized flow control unit 22, and a nozzle 23.
  • the liquid circulation unit 21 includes a U-shaped tube for carrying liquid. Two ends of the U-shaped tube are oppositely provided with two gas inlets, and gas is introduced into the two inlets by blowing It works to make the liquid in the U-shaped tube mix evenly.
  • the pressurized flow control unit 22 is disposed at the bottom of the U-shaped tube and connected to the U-shaped tube.
  • the pressurized flow control unit 22 includes a knob 222 and a striker 221, and the knob 222 is disposed at the striker The upper part of 221 controls the size of the opening of the striker 221.
  • the pressurized flow control unit 22 is provided with a flow tube, which can control the spray pressure by controlling the compressed air of the solenoid valve in the flow tube.
  • the nozzle 23 is disposed directly under the pressure control unit 22, the nozzle 23 is connected to the pressure control unit 22, and the opening area of the nozzle 23 is 0.5 ⁇ the area of the pad 13 0.8 times, the nozzle 23 is provided with an atomizing assembly, the nozzle 23 further includes a gas inlet, and the gas is introduced into the nozzle 23, so that the liquid in the nozzle 23 is mixed evenly.
  • the present invention performs soldering of solder paste by spraying solder paste on the pad to form a film, which can prevent the solder paste from pulling on the chip during subsequent reflow soldering to cause the chip to tilt or short circuit, and also can avoid soldering
  • the virtual welding phenomenon caused by white oil between the positive and negative electrodes of the disk can improve the luminous efficiency of the surface light source and the yield of the solid crystal operation.

Abstract

一种LED的固晶方法及喷涂装置，包括提供一设置有焊盘和覆盖线路的白油层的基板，再在基板上放置钢网，然后通过喷涂装置将含有锡膏的悬浊液喷涂在焊盘上，形成锡膏膜层，最后进行回流焊工艺。通过采用喷涂的方式将锡膏制备在焊盘上，避免了芯片在回流焊过程中受到锡膏拉扯而倾斜或短路，进而改善面光源亮度不均匀的现象。

Description

LED的固晶方法及喷涂装置 技术领域
本发明涉及LED的封装技术领域，尤其涉及一种LED的固晶方法及喷涂装置。
 背景技术
在miniLED（mini Light-Emitting Diode，迷你发光二极管）的固晶工艺方面，一般采用传统的锡膏涂布方式来进行焊接。由于锡膏涂布时，采用的涂布钢网无法精确控制锡膏的用量，造成后续回流焊工艺时固晶芯片由于锡膏的拉扯导致倾斜，从而使芯片的发光方向发生改变，进而导致面光源混光的均匀性变差。
 技术问题
本发明提供一种LED的固晶方法及喷涂装置，以解决现有的LED的固晶方法，由于采用传统的锡膏涂布方式进行焊接，导致无法精确控制锡膏的用量，造成后续回流焊工艺时，固晶芯片受到锡膏的拉扯而倾斜，导致芯片的发光方向改变，进而导致面光源混光的均匀性变差的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种LED的固晶方法，包括：
S10，提供一基板，所述基板上设置有焊盘和覆盖线路的白油层；
S20，提供一喷涂装置，所述喷涂装置包括液体循环单元、与所述液体循环单元连接的加压控流单元、以及与所述加压控流单元连接的喷嘴，所述喷嘴的开口面积是所述焊盘面积的0.5~0.8倍；
S30，在所述基板上放置钢网，所述钢网的网孔与所述焊盘对应设置，所述喷嘴与所述钢网的垂直距离为1~5毫米；
S40，向所述液体循环单元内通入含有锡膏的悬浊液，并混合均匀；
S50，利用加压控流单元控制所述喷嘴的喷涂量，将所述悬浊液喷涂在所述焊盘上，形成锡膏膜层；
S60，将LED芯片置于所述锡膏膜层上；
S70，将放置有所述LED的基板进行回流焊工艺。
在本发明的至少一种实施例中，在所述S60之前，还包括：
利用所述喷涂装置，在所述锡膏膜层上喷涂助焊剂，形成助焊层。
在本发明的至少一种实施例中，在所述S60之前，还包括：
利用所述喷涂装置，在所述助焊层上喷涂抗氧化剂，形成抗氧化层。
在本发明的至少一种实施例中，所述S40包括：
S401，所述液体循环单元包括U型管，向所述U型管中通入所述悬浊液；
S402，向所述U型管的两个端部通入气体，使所述悬浊液混合均匀。
在本发明的至少一种实施例中，在所述S401之前，还包括：将锡膏与低沸点有机溶剂混合、搅拌，形成所述悬浊液。
在本发明的至少一种实施例中，在所述S50中，所述喷嘴将所述悬浊液进行逐行或逐列扫描式喷涂在所述焊盘表面。
在本发明的至少一种实施例中，在所述S50之后，将所述钢网与所述基板脱离。
本发明提供另外一种LED的固晶方法，包括：
S10，提供一基板，所述基板上设置有焊盘和覆盖线路的白油层；
S20，提供一喷涂装置，所述喷涂装置包括液体循环单元、与所述液体循环单元连接的加压控流单元、以及与所述加压控流单元连接的喷嘴；
S30，在所述基板上放置钢网，所述钢网的网孔与所述焊盘对应设置；
S40，向所述液体循环单元内通入含有锡膏的悬浊液，并混合均匀；
S50，利用加压控流单元控制所述喷嘴的喷涂量，将所述悬浊液喷涂在所述焊盘上，形成锡膏膜层；
S60，将LED芯片置于所述锡膏膜层上；
S70，将放置有所述LED的基板进行回流焊工艺。
在本发明的至少一种实施例中，在所述S60之前，还包括：
利用所述喷涂装置，在所述锡膏膜层上喷涂助焊剂，形成助焊层。
在本发明的至少一种实施例中，在所述S60之前，还包括：
利用所述喷涂装置，在所述助焊层上喷涂抗氧化剂，形成抗氧化层。
在本发明的至少一种实施例中，所述S40包括：
S401，所述液体循环单元包括U型管，向所述U型管中通入所述悬浊液；
S402，向所述U型管的两个端部通入气体，使所述悬浊液混合均匀。
在本发明的至少一种实施例中，在所述S40之前，还包括：将锡膏与低沸点有机溶剂混合、搅拌，形成所述悬浊液。
在本发明的至少一种实施例中，所述喷嘴的开口面积是所述焊盘面积的0.5~0.8倍。
在本发明的至少一种实施例中，所述喷嘴与所述钢网的垂直距离为1~5毫米。
在本发明的至少一种实施例中，在所述S50中，所述喷嘴将所述悬浊液进行逐行或逐列扫描式喷涂在所述焊盘表面。
在本发明的至少一种实施例中，在所述S50之后，将所述钢网与所述基板脱离。
本发明还提供一种喷涂装置，包括：加压控流单元、加压控流单元以及喷嘴；其中，所述液体循环单元包括用于承载液体的U形管；所述加压控流单元与所述液体循环单元连接，所述加压控流单元上设置有旋钮和撞针；所述喷嘴设置于所述加压控流单元的下方，与所述加压控流单元连接，所述喷嘴上设置有雾化组件。
在本发明的至少一种实施例中，所述加压控流单元设置于所述U型管的底部且与所述U型管连接。
在本发明的至少一种实施例中，所述旋钮设置于所述撞针的上部，控制所述撞针的开口大小。
在本发明的至少一种实施例中，所述U型管的两个端部相对设置有两个气体通入口。
 有益效果
本发明的有益效果为：本发明通过在焊盘上喷涂锡膏成膜的方式进行锡膏焊接，能够防止在后续的回流焊中锡膏对芯片的拉扯而导致芯片倾斜或短路，另外也能够避免焊盘正负极之间有白油而导致的虚焊现象，能够提升面光源的发光效率和固晶作业的良率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的LED的固晶方法的步骤流程图；
图2为本发明的LED在固晶前芯片架构示意图；
图3为文发明的喷涂装置的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的LED的固晶方法，由于采用锡膏刷涂的方式将LED与焊盘焊接，导致在后续的回流焊工艺时，芯片受到锡膏的拉扯而倾斜，导致芯片的发光方向改变，进而导致面光源混光的均匀性变差的技术问题，本实施例能够解决该缺陷。
如图1~图3所示，本发明提供一种LED的固晶方法，包括以下步骤：
S10，提供一基板11，所述基板11上设置有焊盘13和覆盖线路的白油层12；
S20，提供一喷涂装置20，所述喷涂装置20包括液体循环单元21、与所述液体循环单元21连接的加压控流单元22、以及与所述加压控流单元22连接的喷嘴23；
S30，在所述基板11上放置钢网18，所述钢网的网孔与所述焊盘13对应设置；
S40，向所述液体循环单元21内通入含有锡膏的悬浊液30，并混合均匀；
S50，利用加压控流单元22控制所述喷嘴23的喷涂量，将所述悬浊液30喷涂在所述焊盘13上，形成锡膏膜层14；
S60，将LED芯片17置于所述锡膏膜层14上；
S70，将放置有所述LED的基板11进行回流焊工艺。
在将所述LED芯片17放置在所述锡膏膜层14上之前，所述固晶方法还包括：在所述锡膏膜层14上喷涂助焊剂，形成助焊层15，所述助焊剂用以增加所述锡膏膜层14与所述LED芯片17之间的粘接力；再在所述助焊层15上喷涂抗氧化剂，形成抗氧化层16，所述抗氧化剂避免所述锡膏膜层14受到氧化而变黄。
所述助焊层15和所述抗氧化层16的成膜方式与所述锡膏膜层14的成膜方式相同，都可通过喷涂装置采用喷涂的方式成膜。
在所述S30中，所述钢网18的网孔与所述焊盘13对应设置，露出所述焊盘13的一部分，所述钢网18的网孔面积小于所述焊盘13面积，本实施例中所述钢网18的网孔面积是所述焊盘13面积的一半。
在所述S40中，先将锡膏与低沸点有机溶剂混合，并搅拌形成所述悬浊液30；再将所述悬浊液30通入到所述液体循环单元21中，具体地，将所述悬浊液30通入到所述液体循环单元21中的U型管中；之后向所述U型管的两个端部通入气体，通过吹起作用，使得所述U型管中的所述悬浊液30混合均匀。
在S50中，所述加压控流单元22包括旋钮222和撞针221，通过调节所述旋钮222，控制所述撞针221的开口大小，进而控制喷涂量的大小；所述加压控流单元22内设置有输液管，所述输液管与所述喷头23连接，通过电磁阀压缩空气控制所述喷头23的喷压；所述喷嘴23中含有雾化组件，向所述喷嘴23中通入气体，使得所述喷嘴23中的所述悬浊液30混合均匀。
在完成所述锡膏膜层的制备后，将所述钢网18与所述基板11脱离，之后再进行后续工艺。
在喷涂所述悬浊液30的过程中，所述喷嘴23与所述钢网18的垂直距离为1~5毫米，所述喷嘴23的开口面积是所述焊盘13面积的0.5~0.8倍，所述喷嘴23在所述钢网18表面进行2~5次逐行或逐列扫描式喷涂，含有锡膏的所述悬浊液30落在焊盘13表面，并向所述焊盘13的其他未露出部分扩散，待所述悬浊液30中的低沸点有机溶剂挥发后形成特定厚度的所述锡膏膜层14，之后采用相同或相似的工艺，将助焊剂和抗氧化剂喷涂在所述锡膏膜层14上。
在所述S60和所述S70中，先将所述LED芯片17粘接到所述锡膏膜层14上，具体地，将所述LED芯片17粘接到所述抗氧化层16表面，所述LED芯片17的正负极171分别与所述焊盘13的正负极对应；之后将放置有所述LED芯片17的基板放入回流焊设备中进行所述回流焊工艺，在高温条件下，所述锡膏膜层14和所述助焊层15受热融化，根据液体表面张力原理，锡膏会朝着面积缩小方向运动，由于芯片引脚的表面能较大，回流焊过后，锡膏完全包裹芯片的引脚，所述助焊层15在高温条件下会分解或挥发，最终芯片的固晶位置在不发生明显改变的情况下完成回流焊工艺。
所述基板上形成有铜线路，所述白油层覆盖所述铜线路，所述白油层与所述铜线路经过黄光工艺图案化，所述焊盘的正负极之间填充有白油，可以增大所述基板11的反射率，从而增加LED的光效；根据白油膜层与所述焊盘13之间的高度差估算锡膏喷涂的厚度，从而控制锡膏的用量，避免虚焊现象产生。
如图3所示，本发明提供一种喷涂装置20，可用于上述LED的固晶作业中，所述喷涂装置20包括液体循环单元21、加压控流单元22、以及喷嘴23。
所述液体循环单元21包括U型管，所述U型管用以承载液体，所述U型管的两个端部相对设置有两个气体通入口，向两个通入口通入气体，通过吹起作用使得所述U型管内的液体混合均匀。
所述加压控流单元22设置于所述U型管的底部，与所述U型管连接，所述加压控流单元22包括旋钮222和撞针221，所述旋钮222设置于所述撞针221的上部，控制所述撞针221的开口大小，所述加压控流单元22内设置有输流管，可通过控制输流管中的电磁阀压缩空气进而控制喷压。
所述喷嘴23设置于所述加压控流单元22的正下方，所述喷嘴23与所述加压控流单元22连接，所述喷嘴23的开口面积是所述焊盘13面积的0.5~0.8倍，所述喷嘴23内设置有雾化组件，所述喷嘴23还包括一气体通入口，向所述喷嘴23内通入气体，使得所述喷嘴23内的液体混合均匀。
有益效果：本发明通过采用在焊盘上喷涂锡膏成膜的方式进行锡膏的焊接，能够防止在后续的回流焊中锡膏对芯片的拉扯而导致芯片倾斜或短路，另外也能够避免焊盘正负极之间有白油而导致的虚焊现象，能够提升面光源的发光效率和固晶作业的良率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种LED的固晶方法，包括：
    S10，提供一基板，所述基板上设置有焊盘和覆盖线路的白油层；
    S20，提供一喷涂装置，所述喷涂装置包括液体循环单元、与所述液体循环单元连接的加压控流单元、以及与所述加压控流单元连接的喷嘴，所述喷嘴的开口面积是所述焊盘面积的0.5~0.8倍；
    S30，在所述基板上放置钢网，所述钢网的网孔与所述焊盘对应设置，所述喷嘴与所述钢网的垂直距离为1~5毫米；
    S40，向所述液体循环单元内通入含有锡膏的悬浊液，并混合均匀；
    S50，利用加压控流单元控制所述喷嘴的喷涂量，将所述悬浊液喷涂在所述焊盘上，形成锡膏膜层；
    S60，将LED芯片置于所述锡膏膜层上；
    S70，将放置有所述LED的基板进行回流焊工艺。
  2. 根据权利要求1所述的LED的固晶方法，其中，在所述S60之前，还包括：
    利用所述喷涂装置，在所述锡膏膜层上喷涂助焊剂，形成助焊层。
  3. 根据权利要求2所述的LED的固晶方法，其中，在所述S60之前，还包括：
    利用所述喷涂装置，在所述助焊层上喷涂抗氧化剂，形成抗氧化层。
  4. 根据权利要求1所述的LED的固晶方法，其中，所述S40包括：
    S401，所述液体循环单元包括U型管，向所述U型管中通入所述悬浊液；
    S402，向所述U型管的两个端部通入气体，使所述悬浊液混合均匀。
  5. 根据权利要求4所述的LED的固晶方法，其中，在所述S401之前，还包括：将锡膏与低沸点有机溶剂混合、搅拌，形成所述悬浊液。
  6. 根据权利要求4所述的LED的固晶方法，其中，在所述S50中，所述喷嘴将所述悬浊液进行逐行或逐列扫描式喷涂在所述焊盘表面。
  7. 根据权利要求1所述的LED的固晶方法，其中，在所述S50之后，将所述钢网与所述基板脱离。
  8. 一种LED的固晶方法，包括：
    S10，提供一基板，所述基板上设置有焊盘和覆盖线路的白油层；
    S20，提供一喷涂装置，所述喷涂装置包括液体循环单元、与所述液体循环单元连接的加压控流单元、以及与所述加压控流单元连接的喷嘴；
    S30，在所述基板上放置钢网，所述钢网的网孔与所述焊盘对应设置；
    S40，向所述液体循环单元内通入含有锡膏的悬浊液，并混合均匀；
    S50，利用加压控流单元控制所述喷嘴的喷涂量，将所述悬浊液喷涂在所述焊盘上，形成锡膏膜层；
    S60，将LED芯片置于所述锡膏膜层上；
    S70，将放置有所述LED的基板进行回流焊工艺。
  9. 根据权利要求8所述的LED的固晶方法，其中，在所述S60之前，还包括：
    利用所述喷涂装置，在所述锡膏膜层上喷涂助焊剂，形成助焊层。
  10. 根据权利要求9所述的LED的固晶方法，其中，在所述S60之前，还包括：
    利用所述喷涂装置，在所述助焊层上喷涂抗氧化剂，形成抗氧化层。
  11. 根据权利要求8所述的LED的固晶方法，其中，所述S40包括：
    S401，所述液体循环单元包括U型管，向所述U型管中通入所述悬浊液；
    S402，向所述U型管的两个端部通入气体，使所述悬浊液混合均匀。
  12. 根据权利要求11所述的LED的固晶方法，其中，在所述S401之前，还包括：将锡膏与低沸点有机溶剂混合、搅拌，形成所述悬浊液。
  13. 根据权利要求8所述的LED的固晶方法，其中，所述喷嘴的开口面积是所述焊盘面积的0.5~0.8倍。
  14. 根据权利要求8所述的LED的固晶方法，其中，所述喷嘴与所述钢网的垂直距离为1~5毫米。
  15. 根据权利要求11所述的LED的固晶方法，其中，在所述S50中，所述喷嘴将所述悬浊液进行逐行或逐列扫描式喷涂在所述焊盘表面。
  16. 根据权利要求8所述的LED的固晶方法，其中，在所述S50之后，将所述钢网与所述基板脱离。
  17. 一种喷涂装置，包括：
    液体循环单元，包括用于承载液体的U形管；
    加压控流单元，与所述液体循环单元连接，所述加压控流单元上设置有旋钮和撞针；
    喷嘴，设置于所述加压控流单元的下方，与所述加压控流单元连接，所述喷嘴上设置有雾化组件。
  18. 根据权利要求17所述的喷涂装置，其中，所述加压控流单元设置于所述U型管的底部且与所述U型管连接。
  19. 根据权利要求17所述的喷涂装置，其中，所述旋钮设置于所述撞针的上部，控制所述撞针的开口大小。
  20. 根据权利要求17所述的喷涂装置，其中，所述U型管的两个端部相对设置有两个气体通入口。
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