WO2020077935A1 - 显示面板、发光材料蒸镀方法以及装置 - Google Patents

显示面板、发光材料蒸镀方法以及装置 Download PDF

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Publication number
WO2020077935A1
WO2020077935A1 PCT/CN2019/076912 CN2019076912W WO2020077935A1 WO 2020077935 A1 WO2020077935 A1 WO 2020077935A1 CN 2019076912 W CN2019076912 W CN 2019076912W WO 2020077935 A1 WO2020077935 A1 WO 2020077935A1
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Prior art keywords
luminescent material
array substrate
electric field
layer
vapor deposition
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English (en)
French (fr)
Inventor
程薇
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/349,611 priority Critical patent/US11349076B2/en
Publication of WO2020077935A1 publication Critical patent/WO2020077935A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]

Definitions

  • the present application relates to the field of display, and in particular to a display panel, a method and a device for vapor deposition of luminescent materials.
  • the conventional display panel has a technical problem that the uniformity of the film formation of the luminescent material at the critical position of the sub-pixel is not good.
  • the present application provides a display panel, a method and a device for vapor deposition of luminescent materials, to solve the technical problem of poor uniformity of film formation of luminescent materials at the critical position of sub-pixels in existing display panels.
  • An embodiment of the present application provides a method for vapor-depositing a luminescent material, which includes:
  • the luminescent material is processed to generate charged particles of the luminescent material; after the charged particles of the luminescent material pass through the mask plate, they are deposited on the pixel area of the array substrate under the action of the electric field.
  • the step of generating an electric field covering the array substrate includes:
  • the electric field electrode is energized, the electric field electrode is parallel to the mask plate, and the array substrate is located between the electric field electrode and the mask plate.
  • the step of generating charged particles of the luminescent material includes:
  • the luminescent material evaporation source outputs luminescent material particles
  • the luminescent material particles are controlled to be charged with a specific polarity.
  • the method further includes: supplying power to the circuit of the array substrate.
  • the step of supplying power to the circuit of the array substrate includes: supplying power to the circuit of the array substrate through the thin film transistor circuit of the array substrate.
  • the method further includes: providing a conductive pillar on the surface of the pixel definition layer of the array substrate.
  • the method further includes: supplying power to the conductive pillar provided on the surface of the pixel definition layer of the array substrate.
  • the step of supplying power to the conductive pillar provided on the surface of the pixel definition layer of the array substrate includes: electrically connecting the conductive pillar to the conductive terminal in the vapor deposition device, through vapor deposition The conductive terminals in the device supply power to the conductive posts.
  • An embodiment of the present application provides a display panel, which includes: an array substrate, a pixel definition layer on the array substrate, and a light-emitting material layer in a pixel area defined by the pixel definition layer, the light-emitting material layer passing through The luminescent material evaporation method provided in this application is formed.
  • the display panel of the present application further includes a conductive pillar disposed on the surface of the pixel definition layer of the array substrate.
  • the conductive columns are continuously arranged to form a supporting wall.
  • the display panel of the present application further includes an encapsulation layer provided on the pixel definition layer and the light emitting material layer.
  • the encapsulation layer includes a first inorganic layer, a second inorganic layer, and an organic layer disposed between the first inorganic layer and the second inorganic layer.
  • An embodiment of the present application provides a luminescent material vapor deposition device, which includes:
  • Alignment module used to align the mask plate and the array substrate
  • An electric field module used to generate an electric field covering the array substrate
  • the charged ion module is used to process the luminescent material to generate charged particles of the luminescent material; after the charged particles of the luminescent material pass through the mask plate, they are deposited in the pixel area of the array substrate under the action of the electric field.
  • the luminescent material vapor deposition device of the present application further includes an electric field electrode, and the electric field electrode is parallel to the mask plate.
  • the luminescent material vapor deposition device of the present application further includes a first power supply module for supplying power to the circuit of the array substrate.
  • the luminescent material evaporation device of the present application further includes a second power supply module for supplying power to the conductive pillars provided on the surface of the pixel definition layer of the array substrate.
  • the charged ion module includes a vapor deposition source and a charge source, the vapor deposition source is used to control the luminescent material evaporation source to output luminescent material particles, and the charge source is used to control the The particles of the luminescent material are charged with a specific polarity.
  • the charge source is a network-like charged structure.
  • the electric field module includes a ground terminal and an electric field power terminal.
  • the electric field power terminal is used to output an electric field voltage.
  • the mask plate is grounded through the ground terminal.
  • the electric field electrode obtains an electric field voltage through the electric field power supply terminal to form an electric field.
  • the present application provides a new luminescent material vapor deposition technology, which includes aligning a mask plate and an array substrate, generating an electric field covering the array substrate, processing the luminescent material, and generating luminescent material charged particles; the luminescent material charged particles pass through the mask After the plate, it is deposited in the pixel area of the array substrate under the action of the electric field; this provides the electric field covering the array substrate and generates charged particles of luminescent material.
  • Figure 1 is a schematic diagram of an existing evaporation process
  • FIG. 2 is a first flowchart of a vapor deposition method provided by an embodiment of this application
  • FIG. 3 is a schematic diagram of a vapor deposition apparatus provided by an embodiment of the present application.
  • FIG. 5 is a first schematic diagram of a display panel provided by an embodiment of this application.
  • FIG. 6 is a second schematic diagram of a display panel provided by an embodiment of this application.
  • FIG. 7 is a third schematic diagram of a display panel provided by an embodiment of this application.
  • FIG. 8 is a fourth schematic diagram of a display panel provided by an embodiment of the present application.
  • the present application can solve this defect.
  • the method for vapor-depositing a luminescent material includes the following steps:
  • S203 Process the luminescent material to generate charged particles of the luminescent material; after the charged particles of the luminescent material pass through the mask plate, they are deposited in the pixel area of the array substrate under the action of the electric field.
  • step S202 includes: grounding the mask plate; energizing an electric field electrode, the electric field electrode is parallel to the mask plate, and the array substrate is located between the electric field electrode and the mask Between boards.
  • Mask It is grounded and used as an electrode to apply an electric field.
  • An external electric field electrode is provided under the TFT substrate to form a vertical electric field between the Mask and the TFT substrate, so that the charged particles of EL material are evaporated onto the surface of the TFT substrate in a vertical manner.
  • step S203 includes: the luminescent material evaporation source outputs luminescent material particles; and the luminescent material particles are controlled to be charged with a specific polarity.
  • the evaporation source takes the form of Electron Flux.
  • the method shown in FIG. 2 further includes: supplying power to the circuit of the array substrate to neutralize the charge of the charged particles of the luminescent material deposited at the pixel position.
  • the step of supplying power to the circuit of the array substrate includes: supplying power to the circuit of the array substrate through a thin film transistor TFT circuit of the array substrate.
  • the present application further includes the step of providing conductive pillars on the surface of the pixel definition layer of the array substrate.
  • a columnar structure is made on the surface of the substrate to play a role in blocking and supporting.
  • the triple excitons have a long life cycle, which is easy
  • the long diffusion distance in the device makes the color impure, and the luminous efficiency is low, which affects the life.
  • Adding this cylindrical structure does not affect the display effect under the premise of ensuring a high light transmittance, and prevents vapor deposition during the vapor deposition process.
  • the color mixing function after being assembled, plays a role in blocking the exciton diffusion and affecting the life span.
  • the method shown in FIG. 2 further includes: supplying power to the conductive pillars provided on the surface of the pixel definition layer of the array substrate to prevent the charged particles of the luminescent material from depositing on the On the conductive column.
  • the step of supplying power to the conductive pillars disposed on the surface of the pixel definition layer of the array substrate includes: electrically connecting the conductive pillars to the conductive terminals in the vapor deposition device, through the conductive Terminal to supply power to the conductive post.
  • the luminescent material vapor deposition device provided by the embodiment of the present application includes:
  • An alignment module (not shown in FIG. 3) is used to align the mask plate 4 and the array substrate 5 in a manner such as precise alignment; generally a manipulator, etc .;
  • the electric field module 31 is used to generate an electric field covering the array substrate 5;
  • the charged ion module 32 is used to process the luminescent material to generate luminescent material charged particles; after the luminescent material charged particles pass through the mask plate, they are deposited in the pixel area of the array substrate under the action of the electric field .
  • the charged ion module 32 includes an evaporation source 321 and a charge source 322.
  • the evaporation source 321 is used to control the luminescent material evaporation source to output luminescent material particles
  • the charge source 322 is used to control the The luminescent material particles are charged with a specific polarity.
  • the charge source 322 is a network-like charged structure, and the luminescent material particles will be charged after passing through the structure to form luminescent material charged particles.
  • the luminescent material vapor deposition device further includes an electric field electrode 6, and the electric field electrode 6 is parallel to the mask plate 4.
  • the electric field module 31 includes a ground terminal 311 and an electric field power terminal 312.
  • the electric field power terminal 312 is used to output an electric field voltage.
  • the mask 4 is grounded through the ground terminal 311.
  • the electric field electrode 6 obtains the electric field voltage through the electric field power supply terminal 312, and forms an electric field on this basis.
  • the vapor deposition device further includes a first power supply module for supplying power to the circuit of the array substrate.
  • the vapor deposition device further includes a second power supply module for supplying power to the conductive pillars provided on the surface of the pixel definition layer of the array substrate.
  • the method for vapor-depositing a luminescent material includes the following steps:
  • S401 Provide an array substrate provided with a pixel definition layer.
  • An array substrate as shown in FIG. 5 is provided, and the area formed by the pixel definition layer is a pixel area.
  • a conductive pillar 8 is provided on the pixel definition layer.
  • the conductive pillars may be arranged continuously to form a supporting wall.
  • S403 An anode layer is formed in the pixel area.
  • S405 Generate an electric field covering the array substrate, and supply power to the array substrate circuit and the conductive pillar.
  • the mask plate 4 is grounded through the ground terminal 321, and the electric field electrode 6 obtains the electric field voltage through the electric field power supply terminal 322 to form an electric field.
  • S406 Process the luminescent material to generate charged particles of the luminescent material; after the charged particles of the luminescent material pass through the mask, they are deposited in the pixel area of the array substrate under the action of the electric field.
  • S407 Form a cathode layer in the pixel area and encapsulate to obtain the display panel as shown in FIG. 7.
  • the display panel provided by the embodiment of the present application includes:
  • the array substrate includes a substrate and a thin film transistor array, metal traces, etc. disposed on the substrate.
  • An OLED device 74 disposed in a defined area of the pixel definition layer 73 and penetrating the planarization layer 72 and the array substrate 71, wherein the defined area refers to when the pixel definition layer 73 is prepared,
  • the area vacated between the pixel definition layers 73 is used to form an organic light-emitting material (light-emitting layer) in the defined area in the subsequent process;
  • the OLED device 74 is composed of an anode 741, an organic layer 742, and a cathode 743;
  • the organic layer 742 includes a hole injection layer 7421, a hole transport layer 7422, a light-emitting layer 7423, an electron transport layer 7424, and an electron injection layer 7425.
  • the light-emitting layer 7423 is formed by the evaporation method provided in this application.
  • An encapsulation layer 75 covering the OLED device 74, the pixel definition layer 73, and the array substrate 71.
  • the encapsulation layer 75 includes a first inorganic layer 751, a second inorganic layer 752, and is disposed between the first inorganic layer 751 and the second inorganic layer 752 The organic layer 753.
  • it further includes a conductive pillar 8 disposed on the surface of the pixel definition layer 73 of the array substrate.
  • the conductive columns are continuously arranged to form a supporting wall.
  • the present application provides a new luminescent material vapor deposition technology, which includes aligning a mask plate and an array substrate, generating an electric field covering the array substrate, processing the luminescent material, and generating luminescent material charged particles; the luminescent material charged particles pass through the mask After the plate, it is deposited in the pixel area of the array substrate under the action of the electric field; this provides the electric field covering the array substrate and generates charged particles of luminescent material.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本申请提供一种显示面板、发光材料蒸镀方法以及装置，该方法通过提供覆盖阵列基板的电场，并生成发光材料带电粒子，这些发光材料带电粒子在穿过掩膜板后，在电场的作用下将改变运动方向，沿着电场方向垂直的向阵列基板的像素区域移动，然后均匀的沉积在阵列基板的像素区域，保证了发光材料的成膜均一性。

Description

显示面板、发光材料蒸镀方法以及装置 技术领域
本申请涉及显示领域，尤其涉及一种显示面板、发光材料蒸镀方法以及装置。
 背景技术
在制造OLED 显示面板时，目前大多先制作Array基板，然后通过蒸镀工艺将发光材料蒸镀到Array基板的像素区域。
现在蒸镀工艺如图1所示，将掩膜板Mask与Array基板对齐，然后蒸镀源对内部的发光材料进行蒸镀，但是在R/G/B子像素的临界位置，受制于Mask阴影影响，会出发光材料，如Electroluminescent(EL)材料成膜均一性不佳的现象，导致子像素的临界位置存在色偏或混色问题。
即，现有显示面板存在子像素临界位置的发光材料成膜均一性不佳的技术问题。
 技术问题
本申请提供一种显示面板、发光材料蒸镀方法以及装置，以解决现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供了一种发光材料蒸镀方法，其包括:
对齐掩膜板与阵列基板；
生成覆盖所述阵列基板的电场；
对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
在本申请的发光材料蒸镀方法中，所述生成覆盖所述阵列基板的电场的步骤包括：
将所述掩膜板接地；
将电场电极通电，所述电场电极与所述掩膜板平行，所述阵列基板位于所述电场电极与所述掩膜板之间。
在本申请的发光材料蒸镀方法中，所述生成发光材料带电粒子的步骤包括：
发光材料蒸发源输出发光材料粒子；
控制所述发光材料粒子带特定极性的电荷。
在本申请的发光材料蒸镀方法中，还包括：向所述阵列基板的电路供电。
在本申请的发光材料蒸镀方法中，所述向所述阵列基板的电路供电的步骤包括：通过阵列基板的薄膜晶体管电路，向所述阵列基板的电路供电。
在本申请的发光材料蒸镀方法中，还包括：在所述阵列基板像素定义层表面上设置导电柱。
在本申请的发光材料蒸镀方法中，还包括：向设置在所述阵列基板像素定义层表面上的导电柱供电。
在本申请的发光材料蒸镀方法中，所述向设置在所述阵列基板像素定义层表面上的导电柱供电的步骤包括：将导电柱与蒸镀装置内的导电端子电连接，通过蒸镀装置内的导电端子，向导电柱供电。
本申请实施例提供了一种显示面板，其包括:阵列基板、位于所述阵列基板上的像素定义层、位于所述像素定义层所定义像素区域内的发光材料层，所述发光材料层通过本申请提供的发光材料蒸镀方法形成。
在本申请的显示面板中，还包括设置在所述阵列基板像素定义层表面上的导电柱。
在本申请的显示面板中，所述导电柱连续设置形成支撑墙。
在本申请的显示面板中，还包括设置在所述像素定义层以及发光材料层上的封装层。
在本申请的显示面板中，所述封装层包括第一无机层、第二无机层以及设置在所述第一无机层和所述第二无机层之间的有机层。
本申请实施例提供了一种发光材料蒸镀装置，其包括:
对齐模块，用于对齐掩膜板与阵列基板；
电场模块，用于生成覆盖所述阵列基板的电场；
带电离子模块，用于对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
在本申请的发光材料蒸镀装置中，还包括电场电极，所述电场电极与所述掩膜板平行。
在本申请的发光材料蒸镀装置中，还包括第一供电模块，用于向所述阵列基板的电路供电。
在本申请的发光材料蒸镀装置中，还包括第二供电模块，用于向设置在所述阵列基板像素定义层表面上的导电柱供电。
在本申请的发光材料蒸镀装置中，所述带电离子模块包括蒸镀源以及电荷源，所述蒸镀源用于控制发光材料蒸发源输出发光材料粒子，所述电荷源用于控制所述发光材料粒子带特定极性的电荷。
在本申请的发光材料蒸镀装置中，所述电荷源为网状带电结构。
在本申请的发光材料蒸镀装置中，所述电场模块包括接地端以及电场电源端，所述电场电源端用于输出电场电压，在工作时，所述掩膜板通过所述接地端接地，所述电场电极通过所述电场电源端获得电场电压，形成电场。
 有益效果
本申请提供一种新的发光材料蒸镀技术，其包括对齐掩膜板与阵列基板，生成覆盖阵列基板的电场，对发光材料进行处理，生成发光材料带电粒子；发光材料带电粒子穿过掩膜板后，在电场的作用下沉积在阵列基板的像素区域；这样通过提供覆盖阵列基板的电场，并生成发光材料带电粒子，这些发光材料带电粒子在穿过掩膜板后，在电场的作用下将改变运动方向，沿着电场方向垂直的向阵列基板的像素区域移动，然后均匀的沉积在阵列基板的像素区域，而不会沿原始运动方向沉积在像素临界位置，也不会沉积在其他位置，保证了发光材料的成膜均一性，解决了现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题，也解决了子像素临界位置存在色偏或混色问题。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有蒸镀工艺的示意图；
图2为本申请实施例提供的蒸镀方法的第一种流程图；
图3为本申请实施例提供的蒸镀装置的示意图；
图4为本申请实施例提供的蒸镀方法的第二种流程图；
图5为本申请实施例提供的显示面板的第一种示意图；
图6为本申请实施例提供的显示面板的第二种示意图；
图7为本申请实施例提供的显示面板的第三种示意图；
图8为本申请实施例提供的显示面板的第四种示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
针对现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题，本申请能够解决该缺陷。
在一种实施例中，如图2所示，本申请实施例提供的发光材料蒸镀方法包括以下步骤:
S201：对齐掩膜板与阵列基板；
S202：生成覆盖所述阵列基板的电场；
S203：对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
在一种实施例中，步骤S202包括：将所述掩膜板接地；将电场电极通电，所述电场电极与所述掩膜板平行，所述阵列基板位于所述电场电极与所述掩膜板之间。例如 Mask 接地，作为作用电场的电极，TFT 基板下设置外加电场电极，在Mask 跟TFT 基板中间形成垂直电场，使EL 材料带电粒子以垂直方式蒸镀到TFT 基板表面。
在一种实施例中，步骤S203包括：发光材料蒸发源输出发光材料粒子；控制所述发光材料粒子带特定极性的电荷。例如蒸镀设备内对 EL 材料进行加热等处理时， 蒸镀源以 Electron Flux（电子通量）形式发生。
由于大量带电粒子累积到基板表面时，同性相斥，累积电荷过多，容易造成静电击伤，所以蒸镀过程中给TFT 电路灌入电流，在带电粒子到达基板表面后呈电中性。因此，在一种实施例中，图2所示的方法在步骤S203之前，还包括：向所述阵列基板的电路供电，以中和沉积在像素位置的所述发光材料带电粒子的电荷。
在一种实施例中，所述向所述阵列基板的电路供电的步骤包括：通过阵列基板的薄膜晶体管TFT电路，向所述阵列基板的电路供电。
在一种实施例中，为了更好的增强子像素区域之间的抗干扰性，本申请还包括在所述阵列基板像素定义层表面上设置导电柱的步骤。本申请在蒸镀前，在基板表面制作柱形结构，起阻绝及支撑作用，蒸镀用的磷光材料（发光材料的一种）结构中，由于三重激态子具有较长的生命周期，容易在元件中扩散距离较长使色不纯，且发光效率低，影响寿命，增加此柱形结构在保证高的光穿透率前提下，不影响显示效果，在蒸镀过程中起阻绝蒸镀混色作用，做组装后，起阻断激态子扩散影响寿命的作用。
在一种实施例中，图2所示的方法在步骤S203之前，还包括：向设置在所述阵列基板像素定义层表面上的导电柱供电，以避免所述发光材料带电粒子沉积在所述导电柱上。
在一种实施例中，所述向设置在所述阵列基板像素定义层表面上的导电柱供电的步骤包括：将导电柱与蒸镀装置内的导电端子电连接，通过蒸镀装置内的导电端子，向导电柱供电。
在一种实施例中，如图3所示，本申请实施例提供的发光材料蒸镀装置包括:
对齐模块（图3未示出），用于采用精准对齐等方式，对齐掩膜板4与阵列基板5；一般为机械手等；
电场模块31，用于生成覆盖所述阵列基板5的电场；
带电离子模块32，用于对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
在一种实施例中，如图3所示，带电离子模块32包括蒸镀源321以及电荷源322，蒸镀源321用于控制发光材料蒸发源输出发光材料粒子，电荷源322用于控制所述发光材料粒子带特定极性的电荷。
在一种实施例中，电荷源322为网状带电结构，发光材料粒子穿过该结构后将带电，形成发光材料带电粒子。
在一种实施例中，发光材料蒸镀装置还包括电场电极6，所述电场电极6与所述掩膜板4平行。
在一种实施例中，如图3所示，电场模块31包括接地端311以及电场电源端312，电场电源端312用于输出电场电压，在工作时，掩膜板4通过接地端311接地，电场电极6通过电场电源端312获得电场电压，在此基础上形成电场。
在一种实施例中，蒸镀装置还包括第一供电模块，用于向所述阵列基板的电路供电。
在一种实施例中，蒸镀装置还包括第二供电模块，用于向设置在所述阵列基板像素定义层表面上的导电柱供电。
在一种实施例中，如图4所示，本申请实施例提供的发光材料蒸镀方法包括以下步骤:
S401：提供设置有像素定义层的阵列基板。
提供如图5所示的阵列基板，像素定义层形成的区域为像素区域。
S402：如图6所示，在像素定义层上设置导电柱8。
在一种实施例中，导电柱可以是连续设置的，形成一个支撑墙。
S403：在像素区域形成阳极层。
S404：对齐掩膜板与阵列基板。
S405：生成覆盖所述阵列基板的电场，向阵列基板电路以及导电柱供电。
掩膜板4通过接地端321接地，电场电极6通过电场电源端322获得电场电压，形成电场。
S406：对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
S407：在像素区域形成阴极层，并进行封装，得到如图7所示的显示面板。
在一种实施例中，如图7所示，本申请实施例提供的显示面板包括:
阵列基板71；在一种实施例中，阵列基板包括衬底以及设置在所述衬底上的薄膜晶体管阵列、金属走线等。
设置于所述阵列基板71上的平坦化层72；通常的，所述平坦化层72为有机层，用于平坦化所述阵列基板71。
设置于所述平坦化层上72的像素定义层73；同样的，所述像素定义层73也采用有机材料制备，可以理解的是，所述平坦化层72和所述像素定义层73可以在一道光罩工艺中进行图案化。
设置于所述像素定义层73定义区域内并贯穿所述平坦化层72与所述阵列基板71接触的OLED器件74，其中，所述定义区域指的是在制备所述像素定义层73时，所述像素定义层73之间空出的区域，用于在后续的工艺制程中在定义区域内形成有机发光材料(发光层)；OLED器件74由阳极741、有机层742和阴极743组成；其中，如图8所示，有机物层742包含空穴注入层7421、空穴传输层7422、发光层7423、电子传输层7424和电子注入层7425。其中，发光层7423为采用本申请提供的蒸镀方法形成。
覆盖所述OLED器件74、所述像素定义层73以及所述阵列基板71的封装层75。
在一种实施例中，如图7所示，所述封装层75包括第一无机层751、第二无机层752以及设置在所述第一无机层751和所述第二无机层752之间的有机层753。
在一种实施例中，如图7所示，还包括设置在所述阵列基板像素定义层73表面上的导电柱8。
在一种实施例中，所述导电柱连续设置形成支撑墙。
根据上述实施例可知：
本申请提供一种新的发光材料蒸镀技术，其包括对齐掩膜板与阵列基板，生成覆盖阵列基板的电场，对发光材料进行处理，生成发光材料带电粒子；发光材料带电粒子穿过掩膜板后，在电场的作用下沉积在阵列基板的像素区域；这样通过提供覆盖阵列基板的电场，并生成发光材料带电粒子，这些发光材料带电粒子在穿过掩膜板后，在电场的作用下将改变运动方向，沿着电场方向垂直的向阵列基板的像素区域移动，然后均匀的沉积在阵列基板的像素区域，而不会沿原始运动方向沉积在像素临界位置，也不会沉积在其他位置，保证了发光材料的成膜均一性，解决了现有显示面板存在的子像素临界位置的发光材料成膜均一性不佳的技术问题，也解决了子像素临界位置存在色偏或混色问题。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种发光材料蒸镀方法，其包括:
    对齐掩膜板与阵列基板；
    生成覆盖所述阵列基板的电场；
    对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
  2. 根据权利要求1所述的发光材料蒸镀方法，其中，所述生成覆盖所述阵列基板的电场的步骤包括：
    将所述掩膜板接地；
    将电场电极通电，所述电场电极与所述掩膜板平行，所述阵列基板位于所述电场电极与所述掩膜板之间。
  3. 根据权利要求1所述的发光材料蒸镀方法，其中，所述生成发光材料带电粒子的步骤包括：
    发光材料蒸发源输出发光材料粒子；
    控制所述发光材料粒子带特定极性的电荷。
  4. 根据权利要求1所述的发光材料蒸镀方法，其中，还包括：向所述阵列基板的电路供电。
  5. 根据权利要求4所述的发光材料蒸镀方法，其中，所述向所述阵列基板的电路供电的步骤包括：通过阵列基板的薄膜晶体管电路，向所述阵列基板的电路供电。
  6. 根据权利要求1所述的发光材料蒸镀方法，其中，还包括：在所述阵列基板像素定义层表面上设置导电柱。
  7. 根据权利要求6所述的发光材料蒸镀方法，其中，还包括：向设置在所述阵列基板像素定义层表面上的导电柱供电。
  8. 根据权利要求7所述的发光材料蒸镀方法，其中，所述向设置在所述阵列基板像素定义层表面上的导电柱供电的步骤包括：将导电柱与蒸镀装置内的导电端子电连接，通过蒸镀装置内的导电端子，向导电柱供电。
  9. 一种显示面板，其包括:阵列基板、位于所述阵列基板上的像素定义层、位于所述像素定义层所定义像素区域内的发光材料层，所述发光材料层通过如权利要求1所述的发光材料蒸镀方法形成。
  10. 根据权利要求9所述的显示面板，其中，还包括设置在所述阵列基板像素定义层表面上的导电柱。
  11. 根据权利要求10所述的显示面板，其中，所述导电柱连续设置形成支撑墙。
  12. 根据权利要求9所述的显示面板，其中，还包括设置在所述像素定义层以及发光材料层上的封装层。
  13. 根据权利要求12所述的显示面板，其中，所述封装层包括第一无机层、第二无机层以及设置在所述第一无机层和所述第二无机层之间的有机层。
  14. 一种发光材料蒸镀装置，其包括:
    对齐模块，用于对齐掩膜板与阵列基板；
    电场模块，用于生成覆盖所述阵列基板的电场；
    带电离子模块，用于对发光材料进行处理，生成发光材料带电粒子；所述发光材料带电粒子穿过所述掩膜板后，在所述电场的作用下沉积在所述阵列基板的像素区域。
  15. 根据权利要求14所述的发光材料蒸镀装置，其中，还包括电场电极，所述电场电极与所述掩膜板平行。
  16. 根据权利要求14所述的发光材料蒸镀装置，其中，还包括第一供电模块，用于向所述阵列基板的电路供电。
  17. 根据权利要求14所述的发光材料蒸镀装置，其中，还包括第二供电模块，用于向设置在所述阵列基板像素定义层表面上的导电柱供电。
  18. 根据权利要求14所述的发光材料蒸镀装置，其中，所述带电离子模块包括蒸镀源以及电荷源，所述蒸镀源用于控制发光材料蒸发源输出发光材料粒子，所述电荷源用于控制所述发光材料粒子带特定极性的电荷。
  19. 根据权利要求18所述的发光材料蒸镀装置，其中，所述电荷源为网状带电结构。
  20. 根据权利要求14所述的发光材料蒸镀装置，其中，所述电场模块包括接地端以及电场电源端，所述电场电源端用于输出电场电压，在工作时，所述掩膜板通过所述接地端接地，所述电场电极通过所述电场电源端获得电场电压，形成电场。
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109411603A (zh) 2018-10-17 2019-03-01 武汉华星光电技术有限公司 显示面板、发光材料蒸镀方法以及装置
CN113394262B (zh) * 2021-08-18 2022-04-12 深圳市华星光电半导体显示技术有限公司 显示面板
CN121568515A (zh) * 2026-01-21 2026-02-24 惠科股份有限公司 显示面板的制作方法、掩膜版和显示面板
CN121568514A (zh) * 2026-01-21 2026-02-24 惠科股份有限公司 显示面板的制作方法、掩膜版和显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241551A (zh) * 2014-08-22 2014-12-24 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN108300962A (zh) * 2018-01-30 2018-07-20 武汉华星光电半导体显示技术有限公司 蒸镀设备及蒸镀方法
CN109411603A (zh) * 2018-10-17 2019-03-01 武汉华星光电技术有限公司 显示面板、发光材料蒸镀方法以及装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0452512A4 (en) 1989-11-09 1992-11-04 Minato Company, Ltd. Process involving sterilization step, product having bacteriocidal activity and process for preparing the same, fumigant, fumigation method, and bacteriocidal gas composition, and process and apparatus for preparing the same
US5784141A (en) * 1996-10-04 1998-07-21 Motorola, Inc. Bi-stable non-pixellated phase spatial light modulator for enhanced display resolution and method of fabrication
JPH10319870A (ja) * 1997-05-15 1998-12-04 Nec Corp シャドウマスク及びこれを用いたカラー薄膜ｅｌ表示装置の製造方法
US6376985B2 (en) * 1998-03-31 2002-04-23 Applied Materials, Inc. Gated photocathode for controlled single and multiple electron beam emission
TW495812B (en) 2000-03-06 2002-07-21 Semiconductor Energy Lab Thin film forming device, method of forming a thin film, and self-light-emitting device
TW484238B (en) 2000-03-27 2002-04-21 Semiconductor Energy Lab Light emitting device and a method of manufacturing the same
US20020197393A1 (en) * 2001-06-08 2002-12-26 Hideaki Kuwabara Process of manufacturing luminescent device
US7582857B2 (en) * 2006-04-18 2009-09-01 The Trustees Of The University Of Pennsylvania Sensor and polarimetric filters for real-time extraction of polarimetric information at the focal plane
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
KR101094299B1 (ko) * 2009-12-17 2011-12-19 삼성모바일디스플레이주식회사 선형 증발원 및 이를 포함하는 증착 장치
KR101744760B1 (ko) * 2010-10-25 2017-06-21 삼성디스플레이 주식회사 유기 발광 소자의 발광층 형성 방법, 상기 발광층 형성 방법을 포함하는 유기 발광 소자의 제조 방법, 및 상기 제조 방법에 의한 유기 발광 소자
KR20140008562A (ko) * 2012-07-05 2014-01-22 삼성디스플레이 주식회사 유기 발광 표시 장치의 제조 방법
US9972524B2 (en) * 2013-03-11 2018-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a semiconductor device
US9142779B2 (en) * 2013-08-06 2015-09-22 University Of Rochester Patterning of OLED materials
CN103941540B (zh) * 2014-04-11 2017-05-10 京东方科技集团股份有限公司 一种掩模板
US10163966B2 (en) * 2014-11-26 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Image sensing device and manufacturing method thereof
KR102479926B1 (ko) * 2015-09-03 2022-12-20 삼성전자주식회사 박막 형성 장치, 이를 이용한 유기 발광 소자 및 이의 제조 방법
CN105374334B (zh) * 2015-12-11 2018-06-01 武汉华星光电技术有限公司 液晶显示面板结构
KR102664382B1 (ko) * 2016-07-05 2024-05-09 삼성전자주식회사 기판 패터닝 장치 및 방법, 유기 발광 장치 제조방법
US10497672B2 (en) * 2016-10-24 2019-12-03 Nthdegree Technologies Worldwide Inc. Ultra-thin display using printed printed light emitting diodes
US10903427B2 (en) * 2017-05-01 2021-01-26 Emagin Corporation Apparatus and method for direct patterning of an organic material using an electrostatic mask
JP2018200988A (ja) * 2017-05-29 2018-12-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN107507915B (zh) * 2017-08-09 2019-09-13 武汉华星光电半导体显示技术有限公司 一种制造有机发光显示面板的基板及蒸镀装置
US10541386B2 (en) * 2018-01-30 2020-01-21 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Evaporation deposition equipment and evaporation deposition method
CN109346482B (zh) * 2018-09-30 2024-01-05 武汉华星光电技术有限公司 薄膜晶体管阵列基板及其制造方法、显示面板
KR102702138B1 (ko) * 2018-10-22 2024-09-04 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 증착 방법
US11283004B2 (en) * 2018-12-27 2022-03-22 Areesys Technologies, Inc. Method and apparatus for poling polymer thin films
CN110224005B (zh) * 2019-05-10 2021-04-02 深圳市华星光电半导体显示技术有限公司 显示器及其制备方法
CN110311056B (zh) * 2019-07-26 2021-11-16 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
US11521997B2 (en) * 2020-04-16 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-protrusion transfer gate structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241551A (zh) * 2014-08-22 2014-12-24 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN108300962A (zh) * 2018-01-30 2018-07-20 武汉华星光电半导体显示技术有限公司 蒸镀设备及蒸镀方法
CN109411603A (zh) * 2018-10-17 2019-03-01 武汉华星光电技术有限公司 显示面板、发光材料蒸镀方法以及装置

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