WO2020077865A1 - 一种电子元件的巨量转移方法及装置 - Google Patents

一种电子元件的巨量转移方法及装置 Download PDF

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WO2020077865A1
WO2020077865A1 PCT/CN2018/124562 CN2018124562W WO2020077865A1 WO 2020077865 A1 WO2020077865 A1 WO 2020077865A1 CN 2018124562 W CN2018124562 W CN 2018124562W WO 2020077865 A1 WO2020077865 A1 WO 2020077865A1
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flip
chip
solid crystal
led
transfer head
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PCT/CN2018/124562
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English (en)
French (fr)
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陈新
贺云波
麦锡全
崔成强
刘强
张凯
高健
杨志军
陈桪
陈云
汤晖
张昱
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广东工业大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • the invention relates to the field of semiconductor manufacturing, and in particular to a method and device for mass transfer of electronic components.
  • Micro-LED is a display technology that miniaturizes and matrixes the LED structure, drives and addresses each pixel individually. Because Micro-LED technology's various indicators such as brightness, life, contrast, reaction time, energy consumption, viewing angle and resolution are superior to LCD and OLED technology, it is regarded as a new generation of display technology that can surpass OLED and traditional LED. . However, due to the need for extremely high efficiency, 99.9999% yield rate and transfer accuracy within plus or minus 0.5 ⁇ m in the packaging process, the size of Micro-LED components is basically less than 50 ⁇ m and the number is tens of thousands to millions, so Micro-LED A core technical problem that still needs to be overcome in the LED industrialization process is the Mass-Transfer technology of Micro-LED components. For modern ultra-precision processing technology, the huge transfer of tens of thousands to hundreds of thousands of Micro-LEDs from wafers to substrates is already a huge challenge in itself, and processing efficiency, yield and transfer accuracy are even more impossible to guarantee.
  • Micro-LED mass transfer methods mainly include electrostatic force adsorption method, van der Waals force transfer method, electromagnetic force adsorption method, patterned laser laser ablation method, fluid assembly method, etc.
  • the electrostatic force adsorption method proposed by the American company LuxVue, the van der Waals force transfer method proposed by the American company X-Celeprint, and the electromagnetic force adsorption method proposed by the Taiwan Institute of Industrial Research and Development ITRI through the action of electrostatic force, van der Waals force and electromagnetic force, will Micro-LED is accurately absorbed, then transferred to the target substrate, and accurately released.
  • the above three methods cannot solve the problem that the pitch of the Micro-LED on the wafer is not equal to the pitch of the Micro-LED on the substrate.
  • the patterned laser laser ablation method laser peels the Micro-LED directly from the wafer, but it requires the use of an expensive excimer laser.
  • the fluid assembly method uses a brush barrel to roll on the substrate, so that the Micro-LED is in the liquid suspension, and the LED is dropped into the corresponding well on the substrate by the fluid force.
  • this method has a certain randomness and cannot guarantee the yield of self-assembly.
  • the US patent US20180053742A1 proposes to adhere the electronic device to the temporary fixing layer, and expand the temporary fixing layer to change the LED pitch to transfer to the carrier substrate.
  • the temporary fixed layer expands in both the lateral and vertical directions, it is difficult to ensure the lateral transfer accuracy, and it cannot meet the large amount of transfer with high lateral accuracy requirements, and the temporary fixed layer expansion factor is limited, which cannot meet the large lateral spacing.
  • the huge amount of Micro-LED transfer method proposed by Chinese patent CN201711162098 only transfers LEDs with asymmetric upper and lower edges, and the use of pre-designed molds cannot meet the spacing of electronic components.
  • the purpose of the present invention is to solve the above problems and to provide a method and device for mass transfer of electronic components, to overcome the problem that the prior art can no longer mass transfer of fully controllable pitch Micro-LEDs on target substrates such as panels or wafers.
  • the present invention adopts the following technical solutions:
  • a method for mass transfer of electronic components includes the following steps:
  • Step 1 Drive the XY axis of the motion platform for machine vision alignment.
  • the Z axis keeps the flip-chip transfer head at a certain distance from the Micro-LED. According to the spacing of the substrate Micro-LED that needs to be grasped, external force is applied through the clamping devices at both ends.
  • the elastic material is longitudinally deformed, the flip-chip transfer head is precisely aligned with the substrate Micro-LED, and the substrate Micro-LED is grasped when a positive voltage is applied to the flip-chip transfer head;
  • Step two flip the flip chip transfer head, while the solid crystal transfer head clamps the substrate Micro-LED up and down, grab the LED when the solid crystal transfer head is applied to a positive voltage, and release the LED when the flip chip transfer head is applied to a negative voltage;
  • Step 3 Calculate the required external force value according to the required Micro-LED spacing, and change the longitudinal deformation of the elastic material to obtain the required target substrate Micro-LED spacing;
  • Step 4 Drive the target substrate moving platform, the Micro-LED grabbed by the solid crystal transfer head is positioned at the target position, and the LED is placed when the negative voltage is applied after the solid crystal transfer head is moved down to the target substrate;
  • Step 5 Repeat steps 1 to 4 to achieve a huge amount of controllable electronic component pitch transfer.
  • the flip-chip transfer head and the solid-crystal transfer head have a bipolar structure, and the LED is grabbed when applied to a positive voltage, and the LED is placed when applied to a negative voltage.
  • the elastic material is an elastic polymer material such as silicone rubber.
  • the response time of the elastic material is 10-100 ms.
  • a mass transfer device for electronic components includes a solid crystal welding arm, a flip chip welding arm, an external physics device, and an operating table;
  • the die-bonding welding arm and the flip-chip welding arm are electrically connected to the operating table respectively, and the external physical field devices are respectively provided on both sides of the die bonding welding arm and the flip-chip welding arm;
  • the solid crystal welding arm includes a solid crystal clamping device at both ends, a solid crystal mandrel, a solid crystal guide rail, a solid crystal bracket, a solid crystal transfer head, and a solid crystal elastic material.
  • the solid crystal guide rail is disposed on the solid crystal jack
  • the solid crystal bracket is movably disposed on the solid crystal rail
  • the solid crystal transfer head is disposed on the The solid crystal bracket
  • the solid crystal elastic material is disposed between adjacent solid crystal brackets;
  • the flip-chip welding arm includes a flip-chip rotary motor, a flip-chip clamping device at both ends, a flip-chip guide rail, a flip-chip mandrel, a flip-chip bracket, a flip-chip transfer head, and a flip-chip elastic material. It is arranged on one side of the clamping device at both ends of the flip-chip, the clamping device at both ends of the flip-chip is arranged on both sides of the flip-chip top rod, and the flip-chip guide rail is arranged on the flip-chip top rod,
  • the flip chip bracket is movably arranged on the flip chip rail, the flip chip transfer head is arranged on the flip chip bracket, and the flip chip elastic material is arranged between adjacent flip chip brackets .
  • the external physics device is a linear drive motor.
  • the operation platform includes a visual PLC screen and an integrated PLC control system.
  • the elastic force of the solid crystal elastic material is greater than the clamping force when the clamping devices at both ends of the solid crystal are powered off, and the elastic force of the solid crystal elastic material is less than when the clamping devices at both ends of the solid crystal are energized Clamping force.
  • the elastic force of the flip-chip elastic material is greater than the clamping force when the clamping devices at both ends of the flip-chip are turned off, and the elastic force of the flip-chip elastic material is less than when the clamping devices at both ends of the flip-chip are energized Clamping force.
  • the purpose of the present invention is to propose a method and device for mass transfer of electronic components.
  • the device of the present invention is simple, the efficiency is improved by a 2 c times, the pitch of the electronic components is completely controllable and the mass transfer is on the target substrate, in the field of semiconductor manufacturing Has great application value.
  • FIG. 1 is a three-dimensional schematic diagram of a Micro-LED mass transfer process according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a transfer head according to an embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional view of the transfer head turning and docking exchange according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a cross section of a transfer head aligned with a target substrate according to an embodiment of the invention
  • FIG. 5 is a schematic diagram of a telescopic cross section of a transfer head according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the Micro-LED cross section of the transfer head according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of the cross section of the transfer head away from the target substrate according to an embodiment of the invention.
  • FIG. 8 is a schematic top view of a substrate Micro-LED being transferred according to an embodiment of the present invention.
  • FIG. 9 is a schematic top view of a substrate Micro-LED being transferred according to an embodiment of the present invention.
  • FIG. 10 is a schematic top view of a substrate Micro-LED being transferred according to an embodiment of the present invention.
  • FIG. 11 is a schematic plan view of a substrate Micro-LED being transferred according to an embodiment of the present invention.
  • Micro-LED11 Micro-LED11; substrate 12; target substrate 13; solid crystal welding arm 2; solid crystal clamping device 21 at both ends; solid crystal mandrel 22; solid crystal rail 23; solid crystal bracket 24; solid crystal transfer head 25; solid crystal elastic material 26; flip chip welding arm 3; flip chip rotary motor 31; flip chip clamping device 32 at both ends; flip chip guide 33; flip chip jack 34; flip chip bracket 35; flip chip transfer head 36; flip-chip elastic material 37; substrate Micro-LED pitch L1; target substrate Micro-LED pitch L2; grip point pitch a; longitudinal length c1 before elastic material deformation; longitudinal length c2 after elastic material deformation.
  • a method for mass transfer of electronic components includes the following steps:
  • Step 1 Drive the XY axis of the motion platform for machine vision alignment.
  • the Z axis keeps the flip-chip transfer head at a certain distance from the Micro-LED. According to the spacing of the substrate Micro-LED that needs to be grasped, external force is applied through the clamping devices at both ends.
  • the elastic material is longitudinally deformed, the flip-chip transfer head is precisely aligned with the substrate Micro-LED, and the substrate Micro-LED is grasped when a positive voltage is applied to the flip-chip transfer head;
  • Step two flip the flip chip transfer head, while the solid crystal transfer head clamps the substrate Micro-LED up and down, grab the LED when the solid crystal transfer head is applied to a positive voltage, and release the LED when the flip chip transfer head is applied to a negative voltage;
  • Step 3 Calculate the required external force value according to the required Micro-LED spacing, and change the longitudinal deformation of the elastic material to obtain the required target substrate Micro-LED spacing;
  • Step 4 Drive the target substrate moving platform, the Micro-LED grabbed by the solid crystal transfer head is positioned at the target position, and the LED is placed when the negative voltage is applied after the solid crystal transfer head is moved down to the target substrate;
  • Step 5 Repeat steps 1 to 4 to achieve a huge amount of controllable electronic component pitch transfer.
  • the present invention provides a method for mass transfer of electronic components, replacing the rigid structure between the original transfer heads with an elastic material, according to the required Micro-LED spacing, by adding physical
  • the field changes the longitudinal deformation of the elastic material, so as to accurately grasp the substrate Micro-LED.
  • the longitudinal deformation of the elastic material is changed according to the required Micro-LED spacing, and the longitudinal deformation of the elastic material is changed by applying a physical field to accurately place the Micro-LED on the target substrate. Realize a huge amount of controllable transfer of electronic components.
  • the flip chip transfer head and the solid crystal transfer head have a bipolar structure, the LED is grabbed when applied to a positive voltage, and the LED is placed when applied to a negative voltage.
  • the elastic material is an elastic polymer material such as silicone rubber.
  • the response time of the elastic material is 10-100 ms.
  • a mass transfer device for electronic components includes a solid crystal welding arm 2, a flip chip welding arm 3, an additional physical field device and an operating table;
  • the die-bonding welding arm 2 and the flip-chip welding arm 3 are electrically connected to the operation table, respectively, and the external physics device is provided on the die-bonding welding arm 2 and the flip-chip welding arm 3 respectively. Both sides
  • the solid crystal welding arm 2 includes a solid crystal clamping device 21 at both ends, a solid crystal mandrel 22, a solid crystal guide rail 23, a solid crystal bracket 24, a solid crystal transfer head 25 and a solid crystal elastic material 26, the solid crystal Clamping devices 21 at both ends are provided on both sides of the solid crystal jack 22, the solid crystal guide rail 23 is disposed on the solid crystal jack 22, and the solid crystal bracket 24 is movably disposed on the solid crystal A crystal guide rail 23, the solid crystal transfer head 25 is disposed on the solid crystal bracket 24, and the solid crystal elastic material 26 is disposed between adjacent solid crystal brackets 24;
  • the flip-chip welding arm 3 includes a flip-chip rotary motor 31, a flip-chip clamping device 32 at both ends, a flip-chip guide 33, a flip-chip mandrel 34, a flip-chip bracket 35, a flip-chip transfer head 36 and a flip-chip elastic material 37.
  • the flip-chip rotary electric machine 31 is disposed on one side of the clamping device 32 at both ends of the flip-chip, and the clamping device 32 at both ends of the flip-chip is disposed on both sides of the flip-chip top rod 34.
  • the flip-chip guide rail 33 is disposed on the flip-chip mandrel 34, the flip-chip bracket 35 is movably disposed on the flip-chip rail 33, and the flip-chip transfer head 36 is disposed on the flip-chip bracket 35.
  • the flip chip elastic material 37 is provided between the adjacent flip chip brackets 35.
  • this example proposes a huge transfer device for electronic components, which innovatively overcomes the limitation that the pitch of the target substrate Micro-LED can only depend on the pitch of the transfer head template, and the original material is not replaced by an elastic material. There is a rigid structure between the transfer heads, and the longitudinal deformation of the elastic material is changed by the clamping devices at both ends to realize a huge amount of transfer with a completely controllable electronic element spacing.
  • the Z axis makes the flip chip transfer head 36 50 ⁇ m above the Micro-LED 11, according to the substrate Micro-LED spacing L1 to be grabbed, the flip chip is clamped at both ends
  • the device 32 applies a clamping force to expand and contract the flip-chip elastic material 37, the flip-chip transfer head 36 is precisely aligned with the substrate Micro-LED, and a positive voltage is applied to the flip-chip transfer head 36 to grab the substrate Micro-LED
  • the response time of the flip-chip elastic material 37 is 10-100ms.
  • the flip chip transfer head 36 is turned over, while the solid crystal transfer head 25 moves down to clamp the substrate Micro-LED, the solid crystal transfer head 25 applies a positive voltage to grab the Micro-LED, and the flip chip transfer head 36 Apply a negative voltage to release the Micro-LED.
  • the target substrate moving platform is driven, the Micro-LED 11 grabbed by the solid crystal transfer head 25 is positioned at a target position, the solid crystal transfer head 25 is moved down to the target substrate 13 and a negative voltage is applied, and the Micro-LED 11 is placed. Repeat the above operation to achieve a huge transfer of controllable electronic component spacing.
  • the external physics device is a linear drive motor.
  • the operation console includes a visual PLC screen and an integrated PLC control system.
  • the elastic force of the solid crystal elastic material 26 is greater than the clamping force when the clamping devices 21 at both ends of the solid crystal are powered off, and the elastic force of the solid crystal elastic material 26 is less than the clamping force at the two ends of the solid crystal The clamping force when the tightening device 21 is energized.
  • the elastic force of the flip-chip elastic material 37 is greater than the clamping force when the clamping devices 32 at both ends of the flip-chip are turned off, and the elastic force of the flip-chip elastic material 37 is less than the clamping force at both ends of the flip-chip The clamping force when the tightening device 32 is energized.

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Abstract

一种电子元件的巨量转移装置，包括固晶焊臂、覆晶焊臂、外加物理场装置和操作台；固晶焊臂和覆晶焊臂分别通过电气连接于操作台，外加物理场装置分别设置于固晶焊臂和覆晶焊臂的两侧；覆晶旋转电机设置于覆晶两端夹紧装置的一侧，覆晶两端夹紧装置设置于覆晶顶杆的两侧，覆晶导轨设置于覆晶顶杆，覆晶托架可移动设置于覆晶导轨，覆晶转移头设置于覆晶托架，覆晶弹性材料设置于相邻的覆晶托架之间。本发明的目的在于提出一种电子元件的巨量转移方法及装置，本发明装置简单，效率提高了a 2c倍，电子元件的间距完全可控且巨量转移在目标基板，在半导体制造领域具有极大的应用价值。

Description

一种电子元件的巨量转移方法及装置 技术领域
本发明涉及半导体制造领域，尤其涉及一种电子元件的巨量转移方法及装置。
背景技术
Micro-LED是一种将LED结构微小化和矩阵化，对每一个像素点单独驱动和定址控制的显示技术。由于Micro-LED技术的亮度、寿命、对比度、反应时间、能耗、可视角度和分辨率等各种指标均优于LCD和OLED技术，被视为能超越OLED及传统LED的新一代显示技术。但是，由于封装过程中极高效率、99.9999％良品率和正负0.5μm以内转移精度的需要，而Micro-LED元器件尺寸基本小于50μm且数目是几万到几百万个，因此在Micro-LED产业化过程中仍需要克服的一个核心技术难题就是Micro-LED元器件的巨量转移(Mass Transfer)技术。对于现代超精密加工技术来说，从晶圆上巨量转移几万到几十万个Micro-LED到基板，本身已是一个巨大的挑战，加工效率、良品率和转移精度更加无法保证。
目前Micro-LED巨量转移方法主要有静电力吸附方法、范德华力转印方法、电磁力吸附方法、图案化镭射激光烧蚀方法、流体装配方法等。美国公司LuxVue提出的静电力吸附方法、美国公司X-Celeprint提出的范德华力转印方法和台湾工研所ITRI提出的电磁力吸附方法，分别通过静电力、范德华力和电磁力作用，将巨量Micro-LED精确吸附，再转移到目标衬底，并精确释放。然而，上述三种方法无法解决晶圆上Micro-LED间距与衬底上Micro-LED间距不等的问题。图案化镭射激光烧蚀方法直接从晶圆上激光剥离Micro-LED，但其需要使用昂贵的准分子激光器。流体装配方法利用刷桶在衬底上滚动，使得Micro-LED至于液体悬浮液中，通过流体力让LED落入衬底上的对应井中。然而，此方法 具有一定的随机性，无法确保自组装的良率。
美国专利US20180053742A1提出将电子器件粘附于暂时性固定层，通过扩张该暂时性固定层来改变LED间距从而转移到承载基板上。由于此方法中暂时性固定层在横向和纵向均会扩张，难以确保横向转移精度，无法满足横向精度要求高的巨量转移，且暂时性固定层扩张倍数有限，无法满足大横向间距。中国专利CN201711162098所提出的Micro-LED的巨量转移方法，仅仅对具有上下沿非对称的LED进行转移，且使用预先设计的模具，无法满足电子元件间距。
综上所述，目前仍没有一种电子元件的巨量转移方法与装置，需进一步提出高效、可行的解决方案。
发明内容
本发明的目的在于解决上述问题提出一种电子元件的巨量转移方法及装置，克服现有技术无法再在面板或者晶圆等目标基板上巨量转移完全可控间距的Micro-LED的难题。
为了达到此目的，本发明采用以下技术方案：
一种电子元件的巨量转移方法，包括以下步骤：
步骤一，驱动运动平台XY轴进行机器视觉对准，Z轴使覆晶转移头与Micro-LED保持一定距离，根据所需要抓取的衬底Micro-LED间距，通过两端夹紧装置施加外力使弹性材料纵向形变，覆晶转移头精确对准衬底Micro-LED，对覆晶转移头施加正电压时抓取衬底Micro-LED；
步骤二，翻转覆晶转移头，同时固晶转移头上下夹紧衬底Micro-LED，固晶转移头施于正电压时抓取LED，覆晶转移头施于负电压时松开LED；
步骤三，根据所需要放置的Micro-LED间距，计算所需要施加的外力数值，改变弹性材料纵向形变，得到所需要的目标基板Micro-LED间距；
步骤四，驱动目标基板运动平台，固晶转移头抓取的Micro-LED定位于目标位置，固晶转移头下移到目标基板后施于负电压时放置LED；
步骤五，重复步骤一到步骤四，实现电子元件间距可控的巨量转移。
更优的，所述覆晶转移头和所述固晶转移头具有双极结构，施于正电压时抓取LED，施于负电压时放置LED。
更优的，所述弹性材料为硅橡胶等弹性高分子材料。
更优的，所述弹性材料的响应时间为10-100ms。
更优的，一种电子元件的巨量转移装置，包括固晶焊臂、覆晶焊臂、外加物理场装置和操作台；
所述固晶焊臂和所述覆晶焊臂分别通过电气连接于所述操作台，所述外加物理场装置分别设置于所述固晶焊臂和所述覆晶焊臂的两侧；
所述固晶焊臂包括固晶两端夹紧装置、固晶顶杆、固晶导轨、固晶托架、固晶转移头和固晶弹性材料，所述固晶两端夹紧装置设置于所述固晶顶杆的两侧，所述固晶导轨设置于所述固晶顶杆，所述固晶托架可移动地设置于所述固晶导轨，所述固晶转移头设置于所述固晶托架，所述固晶弹性材料设置于相邻所述固晶托架之间；
所述覆晶焊臂包括覆晶旋转电机、覆晶两端夹紧装置、覆晶导轨、覆晶顶杆、覆晶托架、覆晶转移头和覆晶弹性材料，所述覆晶旋转电机设置于所述覆晶两端夹紧装置的一侧，所述覆晶两端夹紧装置设置于所述覆晶顶杆的两侧，所述覆晶导轨设置于所述覆晶顶杆，所述覆晶托架可移动设置于所述覆晶导轨，所述覆晶转移头设置于所述覆晶托架，所述覆晶弹性材料设置于相邻的所述覆晶托架之间。
更优的，所述外加物理场装置为直线驱动电机。
更优的，所述操作台包括可视化PLC屏幕和集成PLC控制系统。
更优的，所述固晶弹性材料的弹力大于所述固晶两端夹紧装置断电时的夹紧力，所述固晶弹性材料的弹力小于所述固晶两端夹紧装置通电时的夹紧力。
更优的，所述覆晶弹性材料的弹力大于所述覆晶两端夹紧装置断电时的夹紧力，所述覆晶弹性材料的弹力小于所述覆晶两端夹紧装置通电时的夹紧力。
本发明的目的在于提出一种电子元件的巨量转移方法及装置，本发明装置简单，效率提高了a 2c倍，电子元件的间距完全可控且巨量转移在目标基板，在半导体制造领域具有极大的应用价值。
附图说明
图1为本发明的一个实施例的Micro-LED巨量转移过程三维示意图；
图2为本发明的一个实施例的转移头横截面示意图；
图3为本发明的一个实施例的转移头翻转和对接交换横截面示意图；
图4为本发明的一个实施例的转移头对准目标基板横截面的示意图；
图5为本发明的一个实施例的转移头伸缩横截面示意图；
图6为本发明的一个实施例的转移头放置Micro-LED横截面的示意图；
图7为本发明的一个实施例的转移头远离目标基板横截面的示意图；
图8为本发明的一个实施例的衬底Micro-LED被转移过程俯视示意图；
图9为本发明的一个实施例的衬底Micro-LED被转移过程俯视示意图；
图10为本发明的一个实施例的衬底Micro-LED被转移过程俯视示意图；
图11为本发明的一个实施例的衬底Micro-LED被转移过程俯视示意图；
其中：Micro-LED11；衬底12；目标基板13；固晶焊臂2；固晶两端夹紧装置21；固晶顶杆22；固晶导轨23；固晶托架24；固晶转移头25；固晶弹性材料26；覆晶焊臂3；覆晶旋转电机31；覆晶两端夹紧装置32；覆晶导轨33；覆 晶顶杆34；覆晶托架35；覆晶转移头36；覆晶弹性材料37；衬底Micro-LED间距L1；目标基板Micro-LED间距L2；抓取点间距a；弹性材料形变前纵向长度c1；弹性材料形变后纵向长度c2。
具体实施方式
下面结合附图并通过具体实施例方式来进一步说明本发明的技术方案。
一种电子元件的巨量转移方法，包括以下步骤：
步骤一，驱动运动平台XY轴进行机器视觉对准，Z轴使覆晶转移头与Micro-LED保持一定距离，根据所需要抓取的衬底Micro-LED间距，通过两端夹紧装置施加外力使弹性材料纵向形变，覆晶转移头精确对准衬底Micro-LED，对覆晶转移头施加正电压时抓取衬底Micro-LED；
步骤二，翻转覆晶转移头，同时固晶转移头上下夹紧衬底Micro-LED，固晶转移头施于正电压时抓取LED，覆晶转移头施于负电压时松开LED；
步骤三，根据所需要放置的Micro-LED间距，计算所需要施加的外力数值，改变弹性材料纵向形变，得到所需要的目标基板Micro-LED间距；
步骤四，驱动目标基板运动平台，固晶转移头抓取的Micro-LED定位于目标位置，固晶转移头下移到目标基板后施于负电压时放置LED；
步骤五，重复步骤一到步骤四，实现电子元件间距可控的巨量转移。
如图1-11所示，本发明提供了一种电子元件的巨量转移方法，以弹性材料替代原有转移头之间的刚性结构，根据所需要抓取的Micro-LED间距，通过外加物理场改变弹性材料纵向形变，从而精确抓取衬底Micro-LED，抓取后，根据所需要放置的Micro-LED间距，通过外加物理场改变弹性材料纵向形变，精确放置Micro-LED于目标基板，实现电子元件间距完全可控的巨量转移。
更进一步的说明，所述覆晶转移头和所述固晶转移头具有双极结构，施于 正电压时抓取LED，施于负电压时放置LED。
更进一步的说明，所述弹性材料为硅橡胶等弹性高分子材料。
更进一步的说明，所述弹性材料的响应时间为10-100ms。
更进一步的说明，一种电子元件的巨量转移装置，包括固晶焊臂2、覆晶焊臂3、外加物理场装置和操作台；
所述固晶焊臂2和所述覆晶焊臂3分别通过电气连接于所述操作台，所述外加物理场装置分别设置于所述固晶焊臂2和所述覆晶焊臂3的两侧；
所述固晶焊臂2包括固晶两端夹紧装置21、固晶顶杆22、固晶导轨23、固晶托架24、固晶转移头25和固晶弹性材料26，所述固晶两端夹紧装置21设置于所述固晶顶杆22的两侧，所述固晶导轨23设置于所述固晶顶杆22，所述固晶托架24可移动地设置于所述固晶导轨23，所述固晶转移头25设置于所述固晶托架24，所述固晶弹性材料26设置于相邻所述固晶托架24之间；
所述覆晶焊臂3包括覆晶旋转电机31、覆晶两端夹紧装置32、覆晶导轨33、覆晶顶杆34、覆晶托架35、覆晶转移头36和覆晶弹性材料37，所述覆晶旋转电机31设置于所述覆晶两端夹紧装置32的一侧，所述覆晶两端夹紧装置32设置于所述覆晶顶杆34的两侧，所述覆晶导轨33设置于所述覆晶顶杆34，所述覆晶托架35可移动设置于所述覆晶导轨33，所述覆晶转移头36设置于所述覆晶托架35，所述覆晶弹性材料37设置于相邻的所述覆晶托架35之间。
如图1-11所示，本例提出一种电子元件的巨量转移装置，创新性地克服了目标基板Micro-LED间距只能取决于转移头模板间距的这一限制没通过弹性材料替代原有转移头之间的刚性结构，并通过两端夹紧装置改变弹性材料的纵向形变，实现电子元件间距完全可控的巨量转移。驱动运动平台XY轴进行机器视觉对准，Z轴使所述覆晶转移头36在Micro-LED11上方50μm，根据所属要抓 取的衬底Micro-LED间距L1，所述覆晶两端夹紧装置32施加夹紧力使所述覆晶弹性材料37伸缩，所述覆晶转移头36精准对准衬底Micro-LED，对所述覆晶转移头36施加正电压抓取衬底Micro-LED，所述覆晶弹性材料37的响应时间为10-100ms。翻转所述覆晶转移头36，同时所述固晶转移头25下移，夹紧衬底Micro-LED，所述固晶转移头25施加正电压抓取Micro-LED，所述覆晶转移头36施加负电压松开Micro-LED。根据所需要放置的Micro-LED11间距，计算所需要施加的夹紧力数值，改变所述固晶弹性材料26纵向形变，所述固晶弹性材料26形变前纵向长度为c1，形变后纵向长度为c2，得到所需要的目标基板13的Micro-LED11间距为L2。驱动目标基板运动平台，所述固晶转移头25抓取的Micro-LED11定位于目标位置，所述固晶转移头25下移到目标基板13后施加负电压，放置Micro-LED11。重复上述操作，实现电子元件间距可控的巨量转移。
更进一步的说明，所述外加物理场装置为直线驱动电机。
更进一步的说明，所述操作台包括可视化PLC屏幕和集成PLC控制系统。
更进一步的说明，所述固晶弹性材料26的弹力大于所述固晶两端夹紧装置21断电时的夹紧力，所述固晶弹性材料26的弹力小于所述固晶两端夹紧装置21通电时的夹紧力。
更进一步的说明，所述覆晶弹性材料37的弹力大于所述覆晶两端夹紧装置32断电时的夹紧力，所述覆晶弹性材料37的弹力小于所述覆晶两端夹紧装置32通电时的夹紧力。
以上结合具体实施例描述了本发明的技术原理。这些描述只是为了解释本发明的原理，而不能以任何方式解释为对本发明保护范围的限制。基于此处的解释，本领域的技术人员不需要付出创造性的劳动即可联想到本发明的其它具体实施方式，这些方式都将落入本发明的保护范围之内。

Claims (9)

  1. 一种电子元件的巨量转移方法，其特征在于，包括以下步骤：
    步骤一，驱动运动平台XY轴进行机器视觉对准，Z轴使覆晶转移头与Micro-LED保持一定距离，根据所需要抓取的衬底Micro-LED间距，通过两端夹紧装置施加外力使弹性材料纵向形变，覆晶转移头精确对准衬底Micro-LED，对覆晶转移头施加正电压时抓取衬底Micro-LED；
    步骤二，翻转覆晶转移头，同时固晶转移头上下夹紧衬底Micro-LED，固晶转移头施于正电压时抓取LED，覆晶转移头施于负电压时松开LED；
    步骤三，根据所需要放置的Micro-LED间距，计算所需要施加的外力数值，改变弹性材料纵向形变，得到所需要的目标基板Micro-LED间距；
    步骤四，驱动目标基板运动平台，固晶转移头抓取的Micro-LED定位于目标位置，固晶转移头下移到目标基板后施于负电压时放置LED；
    步骤五，重复步骤一到步骤四，实现电子元件间距可控的巨量转移。
  2. 根据权利要求1所述的一种电子元件的巨量转移方法，其特征在于：所述覆晶转移头和所述固晶转移头具有双极结构，施于正电压时抓取LED，施于负电压时放置LED。
  3. 根据权利要求1所述的一种电子元件的巨量转移方法，其特征在于：所述弹性材料为硅橡胶等弹性高分子材料。
  4. 根据权利要求1所述的一种电子元件的巨量转移方法，其特征在于：所述弹性材料的响应时间为10-100ms。
  5. 根据权利要求1-4所述使用电子元件的巨量转移方法的装置，其特征在于：包括固晶焊臂、覆晶焊臂、外加物理场装置和操作台；
    所述固晶焊臂和所述覆晶焊臂分别通过电气连接于所述操作台，所述外加 物理场装置分别设置于所述固晶焊臂和所述覆晶焊臂的两侧；
    所述固晶焊臂包括固晶两端夹紧装置、固晶顶杆、固晶导轨、固晶托架、固晶转移头和固晶弹性材料，所述固晶两端夹紧装置设置于所述固晶顶杆的两侧，所述固晶导轨设置于所述固晶顶杆，所述固晶托架可移动地设置于所述固晶导轨，所述固晶转移头设置于所述固晶托架，所述固晶弹性材料设置于相邻所述固晶托架之间；
    所述覆晶焊臂包括覆晶旋转电机、覆晶两端夹紧装置、覆晶导轨、覆晶顶杆、覆晶托架、覆晶转移头和覆晶弹性材料，所述覆晶旋转电机设置于所述覆晶两端夹紧装置的一侧，所述覆晶两端夹紧装置设置于所述覆晶顶杆的两侧，所述覆晶导轨设置于所述覆晶顶杆，所述覆晶托架可移动设置于所述覆晶导轨，所述覆晶转移头设置于所述覆晶托架，所述覆晶弹性材料设置于相邻的所述覆晶托架之间。
  6. 根据权利要求5所述的一种电子元件的巨量转移装置，其特征在于：所述外加物理场装置为直线驱动电机。
  7. 根据权利要求5所述的一种电子元件的巨量转移装置，其特征在于：所述操作台包括可视化PLC屏幕和集成PLC控制系统。
  8. 根据权利要求5所述的一种电子元件的巨量转移装置，其特征在于：所述固晶弹性材料的弹力大于所述固晶两端夹紧装置断电时的夹紧力，所述固晶弹性材料的弹力小于所述固晶两端夹紧装置通电时的夹紧力。
  9. 根据权利要求5所述的一种电子元件的巨量转移装置，其特征在于：所述覆晶弹性材料的弹力大于所述覆晶两端夹紧装置断电时的夹紧力，所述覆晶弹性材料的弹力小于所述覆晶两端夹紧装置通电时的夹紧力。
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