Classifications

• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
  • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
  • F16B11/00—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding
  • F16B11/006—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding by gluing
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
  • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
  • B32B37/1207—Heat-activated adhesive
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70691—Handling of masks or workpieces
  • G03F7/70716—Stages
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient

Definitions

• the present disclosure relates to internal heating for bonding apparatuses, for example, a bonding apparatus for lithography apparatuses and systems.
• a lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate.
• a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
• a lithographic apparatus may, for example, project a pattern of a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate.
• a patterning device e.g., a mask
• resist radiation-sensitive material
• a lithographic apparatus may use electromagnetic radiation.
• the wavelength of this radiation determines the minimum size of features which can be formed on the substrate.
• a lithographic apparatus which uses extreme ultraviolet (EUV) radiation, having a wavelength within the range 4-20 nm, for example 6.7 nm or 13.5 nm, may be used to form smaller features on a substrate than a lithographic apparatus which uses, for example, radiation with a wavelength of 193 nm.
• EUV extreme ultraviolet
• a bonding apparatus includes a first substrate, a second substrate, a bonding layer, and a heating element.
• the bonding layer is disposed between the first and second substrates.
• the bonding layer is configured to bond the first and second substrates together.
• the heating element is disposed between the first and second substrates.
• the heating element contacts the bonding layer.
• the heating element is configured to generate localized resistive heating to bond the first and second substrates together.
• the heating element is configured to generate localized resistive heating to debond the first and second substrates apart.
• the heating element includes a frame and a resistive wire integral with the frame.
• the frame has a substantially uniform thickness and is configured to set a predetermined bond line thickness of the bonding layer.
• the frame has a stiffness, a compression strength, or a coefficient of thermal expansion substantially equivalent to that of the bonding layer.
• the resistive wire includes nichrome.
• the resistive wire includes a single preformed resistive wire configured to cover a majority of a bond area between the first and second substrates.
• the single preformed resistive wire is arranged in a serpentine, zigzag, spiral, or coil pattern.
• the frame includes a groove configured to ventilate the bonding layer.
• the heating element includes an insulated resistive wire integral with the bonding layer.
• the bonding layer comprises an epoxy, elastomer, or thermoplastic.
• the first substrate is magnetic.
• the localized resistive heating is such that any heat transferred to the first substrate is less than 40 °C.
• the localized resistive heating is such that any heat transferred to the second substrate is less than 40 °C.
• the localized resistive heating is such that any heat transferred to the first and second substrates is less than 40 °C.
• a heating apparatus for bonding or debonding a first substrate and a second substrate includes a frame and a resistive wire.
• the resistive wire is integral with the frame.
• the resistive wire is configured to generate localized resistive heating in a bonding layer between the first and second substrates.
• the localized resistive heating is such that any heat transferred to the first and second substrates is less than 40 °C.
• the frame has a substantially uniform thickness and is configured to set a predetermined bond line thickness of the bonding layer. In some embodiments, the frame has a stiffness, a compression strength, or a coefficient of thermal expansion substantially equivalent to that of the bonding layer. In some embodiments, the frame includes a groove configured to ventilate the bonding layer. In some embodiments, the frame includes a plastic, thermoplastic, ceramic, or metal.
• a method for bonding or debonding a first substrate and a second substrate includes bonding the first and second substrates to form a bonding apparatus, passing an electrical current through the bonding apparatus that generates localized resistive heating in the bonding apparatus, and separating the first and second substrates apart.
• the bonding apparatus includes a bonding layer disposed between the first and second substrates and a heating element disposed between the first and second substrates.
• the heating element contacts the bonding layer.
• the method includes passing an electrical current through the heating element that generates localized resistive heating in the bonding layer.
• the localized resistive heating is such that any heat transferred to the first and second substrates is less than 40 °C.
• the method includes passing an electrical current through the heating element that generates localized resistive heating and promotes bond curing of the bonding layer. In some embodiments, the method includes applying a force of less than 15 N, a torque of less than 10 Nm, or gravity to separate the first and second substrates.
• FIG. 1 is a schematic illustration of a lithographic apparatus, according to an exemplary embodiment
• FIG. 2 is a perspective schematic illustration of a bonding apparatus in a bonded configuration, according to an exemplary embodiment
• FIG. 3 is a cross-sectional view of the bonding apparatus of Figure 2;
• FIGS. 4A-4D are schematic illustrations of a heating element in plan view, according to exemplary embodiments.
• FIG. 5 is a perspective schematic illustration of a bonding apparatus in a debonded configuration, according to an exemplary embodiment.
• FIG. 6 is a cross-sectional view of the bonding apparatus of Figure 5.
• the term“about” as used herein indicates the value of a given quantity that can vary based on a particular technology. Based on the particular technology, the term“about” can indicate a value of a given quantity that varies within, for example, 10-30% of the value (e.g., ⁇ 10%, ⁇ 20%, or ⁇ 30% of the value).
• the term“substantially” as used herein indicates the value of a given quantity that can vary based on a particular technology. Based on the particular technology, the term “substantially” can indicate a value of a given quantity that varies within, for example, 0-10% of the value (e.g., ⁇ 1%, ⁇ 2%, or ⁇ 10% of the value).
• Embodiments of the disclosure may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the disclosure may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors.
• a machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device).
• a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic disk storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others.
• firmware, software, routines, and/or instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc., and in doing that may cause actuators or other devices to interact with the physical world.
• FIG. 1 shows a lithographic system comprising a radiation source SO and a lithographic apparatus LA.
• the radiation source SO is configured to generate an EUV radiation beam B and to supply the EUV radiation beam B to the lithographic apparatus LA.
• the lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g., a mask), a projection system PS, and a substrate table WT configured to support a substrate W.
• a patterning device MA e.g., a mask
• PS projection system
• substrate table WT configured to support a substrate W.
• the illumination system IL is configured to condition the EUV radiation beam B before the EUV radiation beam B is incident upon the patterning device MA.
• the illumination system IL may include a facetted field mirror device 10 and a facetted pupil mirror device 11.
• the faceted field mirror device 10 and faceted pupil mirror device 11 together provide the EUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution.
• the illumination system IL may include other mirrors or devices in addition to, or instead of, the faceted field mirror device 10 and faceted pupil mirror device 11.
• the EUV radiation beam B interacts with the patterning device MA. As a result of this interaction, a patterned EUV radiation beam B’ is generated.
• the projection system PS is configured to project the patterned EUV radiation beam B’ onto the substrate W.
• the projection system PS may comprise a plurality of mirrors 13, 14 which are configured to project the patterned EUV radiation beam B’ onto the substrate W held by the substrate table WT.
• the projection system PS may apply a reduction factor to the patterned EUV radiation beam B’, thus forming an image with features that are smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied.
• the projection system PS is illustrated as having only two mirrors 13, 14 in FIG. 1, the projection system PS may include a different number of mirrors (e.g. six or eight mirrors).
• the substrate W may include previously formed patterns. Where this is the case, the lithographic apparatus FA aligns the image, formed by the patterned EUV radiation beam B’, with a pattern previously formed on the substrate W.
• a relative vacuum i.e. a small amount of gas (e.g. hydrogen) at a pressure well below atmospheric pressure, may be provided in the radiation source SO, in the illumination system IF, and/or in the projection system PS.
• gas e.g. hydrogen
• the radiation source SO may be a laser produced plasma (FPP) source, a discharge produced plasma (DPP) source, a free electron laser (FEE), or any other radiation source that is capable of generating EUV radiation.
• FPP laser produced plasma
• DPP discharge produced plasma
• FEE free electron laser
• Epoxy adhesives are a type of structural adhesive, and can be used to bond metals, glasses, ceramics, magnets, plastics, and other materials. Epoxies cured with heat will be more heat- and chemical-resistant than those cured at room temperature. The joining together of pieces of material is an operation used by manufacturing processes, including lithographic processes. The use of epoxies to attach together components in lithographic and semiconductor manufacturing processes can be used to repair or replace specific bonded components. Current methods to bond components with epoxy or other adhesives require setting a bond line with glass beads, wires, or machined features, and heating the epoxy by convection (e.g., a heat gun) or induction to form the bond. Heat can later be applied to debond the epoxy and the components can then be separated with an applied force or torque.
• convection e.g., a heat gun
• convection and induction methods are difficult for bonding or debonding components located in low accessibility areas.
• selective debonding for some applications requires the additional step of removing or debonding other bonded components to physically access the selected component under investigation.
• temperature sensitive components e.g., magnets
• temperature sensitive components e.g., magnets
• other nearby bonded areas can be affected by the large non-localized temperature gradient caused by convection and induction heating methods. For example, temperatures exceeding 40 °C can cause permanent damage to certain magnets (e.g., complete loss of magnetic field) and weaken the overall magnetic strength of other magnets.
• large applied forces or torques for example, exceeding 15 N or 10 Nm, to the bonded components can cause damage to the components even after heat is applied to debond the epoxy.
• Resistive heating or Joule heating is a type of thermal conduction in which an electric current is passed through a conductor (e.g., resistive wire) to produce heat. The heat produced is proportional to the square of the current applied and the electrical resistance of the conductor.
• Resistive wire can be formed into various shapes and sizes for a variety of bond surfaces and bond areas. For example, resistive wire can be wound in planar coils to obtain a certain electrical resistance and temperature gradient.
• NiCr is a type of resistive heating wire alloy, composed of nickel, chromium, and sometimes iron alloys. NiCr is corrosion-resistant, stable at high temperatures, and can be manufactured at a low cost.
• a single piece of resistive wire for example, NiCr
• Localized bonding and debonding can be conducted through resistive heating of the resistive wire in the bond area. Resistive heating and debonding transfers heat to bonded component surfaces at lower temperatures (e.g., 30 °C) compared to alternative convective or inductive heating temperatures (e.g., 80 °C).
• the localized resistive heating can prevent damage to temperature sensitive components, for example, magnets (e.g., NIB, rare-earth, etc.) or other nearby bonded components. Further, the localized resistive heating can promote bond curing for faster and controlled bonding. Repairs or replacements of bonded components can be localized, reliable, convenient, and faster compared to current convection and induction methods.
• FIGS. 2 and 3 show schematic illustrations of an exemplary bonding apparatus 200, according to some embodiments of this disclosure.
• Bonding apparatus 200 can include first substrate 202, second substrate 204, bonding layer 206, and heating element 300.
• bonding apparatus 200 can be implemented in lithographic apparatus LA.
• bonding apparatus 200 can be used to bond a motor for support structure MT in lithographic apparatus LA.
• First substrate 202 can be any shape or size and any material.
• first substrate 202 can be a magnet for support structure MT in lithographic apparatus LA.
• first substrate 202 can be a metal, an insulator, a ceramic, a magnetic material, a glass, an optic, or any other suitable material that can be bonded by epoxy or adhesive.
• Second substrate 204 can be any shape or size and any material.
• second substrate 204 can be a glass optic for illumination system IL in lithographic apparatus LA.
• second substrate 204 can be a metal, an insulator, a ceramic, a magnetic material, a glass, an optic, or any other suitable material that can be bonded by epoxy or adhesive.
• first substrate 202 can be a metal while second substrate 204 can be a ceramic (e.g., glass, ZERODUR®, etc.).
• second substrate 204 can be a metal while first substrate 202 can be a ceramic (e.g., glass, ZERODUR®, etc.).
• first and second substrates 202, 204 can be the same material, for example, a metal or a glass.
• bonding layer 206 can be disposed between first substrate 202 and second substrate 204.
• bonding layer 206 can be configured to bond first and second substrates 202, 204 together.
• bonding apparatus 200 can be in a bonded configuration 20, such that first and second substrates 202, 204 are bonded together by bonding layer 206.
• bonding layer 206 can extend between first and second substrates 202, 204 around heating element 300.
• bonding layer 206 is an epoxy, elastomer, or thermoplastic.
• bonding layer 206 can be a thermally cured epoxy.
• Heating element 300 can be disposed between first and second substrates 202, 204.
• Heating element 300 contacts bonding layer 206.
• heating element 300 can be integral with bonding layer 206.
• heating element 300 can be embedded in bonding layer 206.
• Heating element 300 generates localized resistive heating when an electric current is passed through heating element 300.
• heating element 300 is configured to generate localized resistive heating to bond first and second substrates 202, 204 together.
• the localized resistive heating generated by heating element 300 promotes bond curing of bonding layer 206.
• heating element 300 is configured to generate localized resistive heating to debond first and second substrates 202, 204 apart.
• the localized resistive heating generated by heating element 300 is such that bonding layer 206 is cohesively debonded from first and second substrates 202, 204 and any heat transferred to the first and second substrates is less than 40 °C.
• heating element 300 can include resistive wire 308.
• resistive wire 308 can include NiCr.
• resistive wire 308 can be 90% nickel and 10% chromium, by mass, with a wire thickness of 125 microns.
• heating element 300 can include first lead 302 and second lead 304, which each are electrically connected to resistive wire 308.
• resistive wire 308 can be insulated resistive wire 310.
• insulated resistive wire 310 can be NiCr with an 8 micron thick polyimide insulation layer.
• heating element 300 can include insulated resistive wire 310 integral with bonding layer 206.
• heating element 300 can be insulated resistive wire 310 with first and second leads 302, 304.
• insulated resistive wire 310 can be embedded in bonding layer 206.
• heating element 300 can include frame 306 with resistive wire 308 integral with frame 306.
• resistive wire 308 can be embedded in frame 306.
• Frame 306 can be any suitable shape or size and any material to help bond or debond first and second substrates 202, 204.
• frame 306 can be a thin quadrilateral or cuboid.
• frame 306 can be a thin disk or cylinder.
• frame 306 can be an insulator, for example, a plastic.
• frame 306 can be a metal, for example, titanium.
• frame 306 can be configured to set or control a predetermined bond line thickness of bonding layer 206.
• frame 306 can have a substantially uniform thickness (height) in order to form a substantially uniform bonding layer 206 thickness, for example, 0.5 mm between first and second substrates 202, 204.
• frame 306 can be configured to ventilate bonding layer 206.
• frame 306 can include first groove 312 and second groove 314, each extending along one or more surfaces of frame 306, to help ventilate and evenly flow bonding layer 206 between heating element 300 and first and second substrates 202, 204.
• frame 306 can have a stiffness, a compression strength, or a coefficient of thermal expansion substantially equivalent to that of bonding layer 206.
• the stiffness of frame 306 can be tuned to substantially match bonding layer 206 such that both frame 306 and bonding layer 206 compress or flex about or substantially the same amount during bonding or debonding.
• resistive wire 308 can be disposed along a plane of symmetry of frame 306.
• the plane of symmetry can be along a height centerline of frame 306.
• resistive wire 308 can be bare (uninsulated) and integral with frame 306.
• resistive wire 308 can be bare NiCr and frame 306 can be an insulating high-temperature thermoplastic.
• resistive wire 308 can be insulated resistive wire 310.
• resistive wire 308 can be bare (uninsulated) and encased in an insulator to form insulated resistive wire 310.
• FIGS. 4A through 4D show schematic illustrations of exemplary heating element
• heating element 300 can include frame 306 and resistive wire 308 integral with frame 306, with first and second leads 302, 304 electrically connected to resistive wire 308 and extending external to frame 306.
• resistive wire 308 can be embedded in frame 306.
• resistive wire 308 can be a single preformed resistive wire.
• resistive wire 308 can be shaped to maximize coverage or cover a majority of a bond area or a cross-sectional area of frame 306 between first and second substrates 202, 204.
• resistive wire 308 can be arranged in a serpentine pattern.
• resistive wire 308 is shaped like a serpentine, with first and second leads 302, 304 at each end.
• resistive wire 308 can be arranged in a spiral pattern.
• resistive wire 308 is shaped like a square spiral, with first and second leads 302, 304 at each end.
• resistive wire 308 can be arranged in a coil pattern.
• resistive wire 308 is shaped like a circular coil, with first and second leads 302, 304 at each end.
• resistive wire 308 can be arranged in a zigzag pattern. For example, as shown in FIG.
• insulated resistive wire 310 is shaped like a zigzag, with first and second leads 302, 304 at each end.
• frame 306 can be omitted and insulated resistive wire 310 can be heating element 300 and integral with bonding layer 206.
• heating element 300 can include insulated resistive wire 310.
• insulated resistive wire 310 can be embedded in bonding layer 206.
• FIGS. 5 and 6 show schematic illustrations of an exemplary bonding apparatus 200, according to some embodiments of this disclosure.
• bonding apparatus 200 can be in a debonded configuration 30, such that first and second substrates 202, 204 are debonded apart from bonding layer 206.
• heating element 300 is configured to generate localized resistive heating to debond first and second substrates 202, 204 apart.
• the localized resistive heating generated by heating element 300 is such that any heat transferred to first and second substrates 202, 204 is less than 40 °C.
• bonding layer 206 failed cohesively with a maximum magnetic first substrate 202 surface temperature of 33.7 °C and magnetic first substrate 202 was removed with an applied 10 Nm torque.
• bonding apparatus 200 can be arranged in bonded configuration 20. In some embodiments, this can be accomplished, for example, by applying bonding layer 206 and heating element 300 between first and second substrates 202, 204. In some embodiments, bonded configuration 20 can be accomplished by passing an electrical current through heating element 300 that generates localized resistive heating and promotes bond curing of bonding layer 206. In some embodiments, as shown in FIGS. 5 and 6, bonding apparatus 200 can be arranged in debonded configuration 30.
• this can be accomplished, for example, by passing an electrical current through heating element 300 that generates localized resistive heating with a low temperature gradient, for example, such that surface temperatures of first and second substrates 202, 204 near heating element 300 remain less than 40 °C, and separating first and second substrates 202, 204 apart. For example, applying a force of less than 15 N, a torque of less than 10 Nm, or gravity to separate first and second substrates 202, 204.
• the user can then apply a force of less than 15 N, a torque of less than 10 Nm, or gravity to separate first and second substrates 202, 204 apart and achieve debonded configuration 30 (see FIGS. 5 and 6).
• first and second substrates 202, 204, after debonding can be separated solely from their own weight and the force of gravity (i.e., no applied force or torque needed).
• a bonding apparatus comprising:
• a second substrate a bonding layer disposed between the first and second substrates, wherein the bonding layer is configured to bond the first and second substrates together;
• heating element disposed between the first and second substrates, wherein the heating element contacts the bonding layer and is configured to generate localized resistive heating to bond the first and second substrates together or to debond the first and second substrates apart.
• the resistive wire comprises a single preformed resistive wire configured to cover a majority of a bond area between the first and second substrates.
• a heating apparatus for bonding or debonding a first substrate and a second substrate comprising:
• resistive wire integral with the frame, wherein the resistive wire is configured to generate localized resistive heating in a bonding layer between the first and second substrates
• the localized resistive heating is such that any heat transferred to the first and second substrates is less than 40 °C.
• the frame has a stiffness, a compression strength, or a coefficient of thermal expansion substantially equivalent to that of the bonding layer.
• a method for bonding or debonding a first substrate and a second substrate comprising: bonding the first and second substrates to form a bonding apparatus, the bonding apparatus comprising:
• a bonding layer disposed between the first and second substrates; and a heating element disposed between the first and second substrates, wherein the heating element contacts the bonding layer;
• Embodiments of the disclosure may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device). These apparatuses may be generally referred to as lithographic tools. Such lithographic tools may use vacuum conditions or ambient (non vacuum) conditions.

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• 2019
  • 2019-09-11 WO PCT/EP2019/074176 patent/WO2020069829A1/en active Application Filing
  • 2019-09-11 KR KR1020217009930A patent/KR20210062647A/ko unknown
  • 2019-09-11 CN CN201980065688.2A patent/CN112805478B/zh active Active
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