WO2020062855A1 - 提高曝光精度的方法以及装置 - Google Patents
提高曝光精度的方法以及装置 Download PDFInfo
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- WO2020062855A1 WO2020062855A1 PCT/CN2019/084490 CN2019084490W WO2020062855A1 WO 2020062855 A1 WO2020062855 A1 WO 2020062855A1 CN 2019084490 W CN2019084490 W CN 2019084490W WO 2020062855 A1 WO2020062855 A1 WO 2020062855A1
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- Prior art keywords
- exposure
- point
- offset value
- patterns
- points
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Definitions
- the present application relates to the field of display technology, and in particular, to a method and device for improving exposure accuracy.
- the exposure process is implemented by combining the glass substrate coated with a photoresist film with a photomask through the exposure machine.
- the position accuracy of the exposure determines the positioning and manufacturing accuracy of the glass substrate in the subsequent process. If the exposure position deviation is abnormal, the pattern position cannot be matched in the next process, which may cause the transistor in the substrate to fail to conduct or the red, green, and blue pixels in the color film substrate to leak light. Thereby, it is possible that the alignment of the substrate and the color film substrate may deviate when the box is formed, thereby affecting the product yield when the box is formed.
- the technical problem mainly solved in this application is how to improve the accuracy of exposure and thus the product yield.
- an embodiment of the present application provides a method for improving exposure accuracy, including: forming an exposed area on a substrate;
- an exposure point corresponding to each exposure offset value is corrected.
- the step of detecting the exposure points in the exposure area to obtain the exposure point set includes:
- the step of detecting an exposure offset value corresponding to each exposure point in the exposure point set to obtain an exposure offset value set includes:
- an exposure offset value set is constructed.
- an embodiment of the present application provides a method for improving exposure accuracy, including:
- an exposure point corresponding to each exposure offset value is corrected.
- an embodiment of the present application further provides a device for improving exposure accuracy, including:
- An extraction unit configured to extract exposure points in the exposure area to obtain a set of exposure points
- a detecting unit configured to detect an exposure offset value corresponding to each exposure point in the exposure point set, and obtain an exposure offset value set;
- a correction unit is used to correct an exposure point corresponding to each exposure offset value.
- the extraction unit is specifically configured to:
- An exposure point set is determined according to a plurality of the exposure point sub-sets.
- the detection unit is specifically configured to:
- an exposure offset value set is constructed.
- the beneficial effect of the present application is that correcting the exposure point based on the offset value of the exposure point can effectively improve the exposure accuracy, thereby improving the product yield.
- FIG. 1 is a schematic flowchart of a method for improving exposure accuracy according to an embodiment of the present application. .
- FIG. 2 is a schematic diagram of an exposure pattern provided by an embodiment of the present application.
- FIG. 3 is a schematic diagram of a feedback coordinate system in a method for improving exposure accuracy provided by an embodiment of the present application.
- FIG. 4 is an enlarged view of an exposure pattern diagram shown in FIG. 2.
- FIG. 5 is a schematic structural diagram of an apparatus for improving exposure accuracy according to an embodiment of the present application.
- FIG. 1 is a schematic flowchart of a method for improving exposure accuracy according to an embodiment of the present application.
- the present invention provides a method for improving exposure accuracy, including:
- an exposure machine may be used to expose the substrate to form an exposed area on the substrate.
- the substrate may be a glass substrate.
- all the exposure points on the exposure area can be extracted.
- the exposure pattern in the exposure area can be obtained.
- the exposure points of each exposure pattern are extracted to obtain a set of exposure points.
- the step of extracting the exposure points in the exposure area to obtain the exposure point set may include:
- a substrate with a plurality of preset patterns may be first used to expose the substrate.
- the multiple preset exposure patterns can be M1, M2, M3, M4, M5, M6, and M7, and the formed exposure patterns can be M1 + 2, M1, M1-2, and so on. as shown in picture 2.
- the exposure points in the exposure pattern may be arranged in a matrix.
- the shape of the exposure pattern is not limited to this, and may have other shapes, which are merely illustrated in the embodiments of the present application.
- the image definition of the exposure pattern obtained is not clear. Therefore, after obtaining the exposure pattern in the exposure area and obtaining multiple exposure patterns, the image sharpness of the exposure pattern can also be detected.
- the method before the step of extracting the exposure points of each exposure pattern, obtaining the exposure pattern in the exposure area and obtaining the multiple exposure patterns, the method further includes:
- the exposure points of each exposure pattern are extracted to obtain a set of exposure points corresponding to each exposure pattern.
- the method includes: extracting an exposure point of each exposure pattern to be extracted, and obtaining an exposure point sub-set corresponding to each exposure pattern to be extracted.
- the image sharpness of each exposure pattern can be detected. Then, it is judged whether the image definition of each exposure pattern satisfies a preset condition.
- the preset condition may be a preset image sharpness.
- the step of obtaining an exposure pattern whose image definition meets a preset condition, and obtaining multiple exposure patterns to be extracted includes:
- the sharpness of the image of the current processing object For example, the sharpness of the image of the current processing object.
- an exposure value corresponding to each exposure point in the exposure point set may be detected. Then calculate the difference between the exposure value corresponding to each exposure point and the preset reference value, so as to obtain the exposure offset value corresponding to each exposure point. A set of exposure offset values is then constructed based on these exposure offset values.
- the step of detecting the exposure offset value corresponding to each exposure point in the exposure point set to obtain the exposure offset value set includes:
- the offset between the exposure point and the preset reference point may be determined according to the exposure offset value corresponding to each exposure point. Then, the exposure can be re-exposed according to the offset to obtain new exposure points to correct each exposure point.
- the step of correcting the exposure point corresponding to each exposure offset value based on the exposure offset value set includes:
- a feedback coordinate system of an exposure point set is constructed, as shown in FIG. 3. Then mark the coordinates of each exposure point in the feedback coordinate system to get the feedback coordinates of each exposure point. And according to the exposure offset value corresponding to each exposure point, the offset amount between the exposure point and the preset reference point is determined, and then the feedback coordinates of each exposure point are corrected according to the offset amount.
- the coordinate of the exposure point can be corrected by translation, so as to achieve the purpose of correcting the exposure point.
- the step of correcting the feedback coordinates corresponding to each exposure point according to the exposure offset value corresponding to each exposure point includes:
- the feedback coordinate system of the exposure point can be directly constructed according to the position of the exposure point, or the pattern corresponding to each exposure point can also be established Construct a feedback coordinate system.
- a feedback coordinate system For example, in step (11), multiple exposure patterns are acquired, and then a single exposure pattern is processed to obtain an enlarged view of a single exposure pattern. The enlarged view is shown in FIG. 4. Then, according to the enlarged image of the single exposure pattern, the preset query table is used to query the value corresponding to the enlarged image. Then, a feedback coordinate system is constructed based on this value.
- the exposure point corresponding to each exposure point in the exposure point set is detected to obtain an exposure offset value set.
- the exposure point corresponding to each exposure offset value is corrected.
- correcting the exposure point based on the offset value of the exposure point can effectively improve the exposure accuracy, thereby improving the product yield.
- the present application also provides a device for improving exposure accuracy, and is hereinafter referred to as a device. Please refer to FIG. 5.
- the device may include an exposure unit 201, an extraction unit 202, a detection unit 203, and a correction unit 204.
- the details can be as follows:
- An exposure unit 201 configured to form an exposed area on the substrate
- the extraction unit 202 is configured to extract exposure points in an exposure area to obtain a set of exposure points
- a detecting unit 203 configured to detect an exposure offset value corresponding to each exposure point in the exposure point set, and obtain an exposure offset value set;
- the correction unit 204 is configured to correct an exposure point corresponding to each exposure offset value.
- the extraction unit 202 may be specifically configured to:
- the detection unit 203 is specifically configured to:
- the extraction unit 202 extracts exposure points in the exposure area to obtain an exposure point set. Then the detection unit 203 detects an exposure offset value corresponding to each exposure point in the exposure point set to obtain an exposure offset value set. Then, based on the exposure offset value set, the correction unit 204 corrects the exposure point corresponding to each exposure offset value. In the embodiment of the present application, correcting the exposure point based on the offset value of the exposure point can effectively improve the exposure accuracy, thereby improving the product yield.
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Abstract
一种提高曝光精度的方法以及装置。这种方法包括:在基板上形成曝光区域后(101);首先提取曝光区域中的曝光点,得到曝光点集合(102);然后检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合(103);接着基于曝光偏移值集合,修正每个曝光偏移值对应的曝光点(104)。
Description
本申请涉及显示技术领域,具体涉及一种提高曝光精度的方法以及装置。
在液晶显示面板制程的光刻工艺中均需要使用曝光机,通过曝光机对涂布有光刻胶膜的玻璃基板结合光罩实现曝光过程。在该步骤中,曝光的位置精度决定了后续制程中玻璃基板的对位与制作精度。如果曝光位置偏差异常,会导致下一制程中图案的位置无法匹配,从而可能导致基板中晶体管无法导通或彩膜基板中红绿蓝象素出现漏光的情形发生。从而有可能使成盒时基板与彩膜基板对位出现偏差,从而影响成盒时的产品良率。
本申请主要解决的技术问题,如何能够提高曝光精度,从而提高产品良率。
第一方面,本申请实施例提供一种提高曝光精度的方法,包括:在基板上形成曝光区域;
提取所述曝光区域中的曝光点,得到曝光点集合;
检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;
基于所述曝光偏移值集合,修正每个曝光偏移值对应的曝光点。
其中,所述检测所述曝光区域中的曝光点,得到曝光点集合的步骤,包括:
获取所述曝光区域中的曝光图案,得到多个曝光图案;
提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合;
根据多个所述曝光点子集合,确定曝光点集合;
所述检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合的步骤,包括:
获取所述曝光点集合中每个曝光点对应的曝光值;
计算所述每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;
根据所述多个曝光偏移值,构建曝光偏移值集合。
第二方面,本申请实施例提供一种提高曝光精度的方法,包括:
在基板上形成曝光区域;
提取所述曝光区域中的曝光点,得到曝光点集合;
检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;
基于所述曝光偏移值集合,修正每个曝光偏移值对应的曝光点。
第三方面,本申请实施例还提供一种提高曝光精度的装置,包括:
曝光单元,用于在基板上形成曝光区域;
提取单元,用于提取所述曝光区域中的曝光点,得到曝光点集合;
检测单元,用于检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;
修正单元,用于修正每个曝光偏移值对应的曝光点。
在本申请所述的用于提高曝光精度的装置中,所述提取单元具体用于:
获取所述曝光区域中的曝光图案,得到多个曝光图案;
提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合;
根据多个所述曝光点子集合,确定曝光点集合。
在本申请所述的用于提高曝光精度的装置中,所述检测单元具体用于:
获取所述曝光点集合中每个曝光点对应的曝光值;
计算所述每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;
根据所述多个曝光偏移值,构建曝光偏移值集合。
本申请的有益效果是:基于曝光点的偏移值对曝光点进行修正,可以有效地提高曝光精度,从而提高产品良率。
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的提高曝光精度的方法的流程示意图。。
图2为本申请实施例提供的曝光图案示意图。
图3为本申请实施例提供的提高曝光精度的方法中的反馈坐标系示意图。
图4为图2所示的曝光图案示意图的放大图。
图5为本申请实施例提供的提高曝光精度的装置的结构示意图。
下面详细描述本申请的实施方式,所述实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本申请,而不能理解为对本申请的限制。
请参阅图1,图1为本申请实施例提供的提高曝光精度的方法的流程示意图。
本发明提供一种提高曝光精度的方法,包括:
101、在基板上形成曝光区域。
比如,可以采用曝光机对基板进行曝光,以在该基板上形成曝光区域。该基板可以是玻璃基板。
102、提取曝光区域中的曝光点,得到曝光点集合。
具体的,在基板上形成曝光区域后,可以提取该曝光区域上所有的曝光点。比如,可以通过获取曝光区域中的曝光图案。然后再提取每个曝光图案的曝光点,从而得到曝光点集合。
即,在一些实施例中,提取曝光区域中的曝光点,得到曝光点集合的步骤,可以包括:
获取曝光区域中的曝光图案,得到多个曝光图案;
提取每个曝光图案的曝光点,得到每个曝光图案对应的曝光点子集合;
根据多个曝光点子集合,确定曝光点集合。
比如,在曝光过程中,首先可以采用具有多个预设图案的透镜对基板进行曝光。多个预设曝光图案可以为M1、M2、M3、M4、M5、M6以及M7,形成的曝光图案可以为M1+2、M1以及M1-2等等。如图2所示。在一些实施例中,曝光图案中的曝光点可以呈矩阵排布。当然,曝光图案的形状不限于此,还可以有别的形状,在本申请实施例中仅仅是举例说明。
然而,在实施工作过程中,可能会存在获取得到曝光图案的图像清晰度不清晰。因此在获取曝光区域中的曝光图案,得到多个曝光图案之后,还可以对曝光图案的图像清晰度进行检测。
即,在一些实施例中,提取每个曝光图案的曝光点的步骤之前,获取曝光区域中的曝光图案,得到多个曝光图案的步骤之后,还包括:
检测多个曝光图案的图像清晰度;
获取图像清晰度满足预设条件的曝光图案,得到多个待提取曝光图案;
提取每个曝光图案的曝光点,得到每个曝光图案对应的曝光点子集合。包括:提取每个待提取曝光图案的曝光点,得到每个待提取曝光图案对应的曝光点子集合。
比如,可以检测每个曝光图案的图像清晰度。然后再分别判断每个曝光图案的图像清晰度是否满足预设条件。该预设条件可以为预设图像清晰度。
即,在一些实施例中,获取图像清晰度满足预设条件的曝光图案,得到多个待提取曝光图案的步骤,包括:
确定当前需要处理的曝光图案,得到当前处理对象;
判断当前处理对象的图像清晰度是否满足预设条件;
若当前处理对象的图像清晰度满足预设条件,则确定当前处理对象为待提取曝光图案;
返回执行确定当前需要处理的曝光图案,直到所有曝光图案均判断完毕。
比如,当前处理对象的图像清晰度。
103、检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合。
例如,可以检测曝光点集合中每个曝光点对应的曝光值。然后计算每个曝光点对应的曝光值与预设基准值之间的差值,从而得到每个曝光点对应的曝光偏移值。然后在根据这些曝光偏移值构建曝光偏移值集合。
即,在一些实施例中,检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合的步骤,包括:
获取所述曝光点集合中每个曝光点对应的曝光值;
计算每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;
根据多个曝光偏移值,构建曝光偏移值集合。
104、基于曝光偏移值集合,修正每个曝光偏移值对应的曝光点。
例如,可以根据每个曝光点对应的曝光偏移值,确定曝光点与预设基准点的偏移量。然后可以根据该偏移量重新曝光,得到新的曝光点,以修正每个曝光点。
在一些实施例中,基于曝光偏移值集合,修正每个曝光偏移值对应的曝光点的步骤,包括:
基于曝光偏移值集合,构建曝光点集合的反馈坐标系;
标记每个曝光点在反馈坐标系中的坐标,得到每个曝光点对应的反馈坐标;
根据每个曝光点对应的曝光偏移值,修正每个曝光点对应反馈坐标。
比如,根据曝光偏移值集合,构建一个曝光点集合的反馈坐标系,如图3所示。然后再标记每个曝光点在反馈坐标系中的坐标,得到每个曝光点的反馈坐标。并根据每个曝光点对应的曝光偏移值,确定曝光点与预设基准点的偏移量,然后根据该偏移量去修正每个曝光点的反馈坐标。修正曝光点反馈坐标的方法可以有很多。比如,可以采用平移的方式去修正曝光点的坐标,以达到修正曝光点的目的。
即,在一些实施例中,根据每个曝光点对应的曝光偏移值,修正每个曝光点对应反馈坐标的步骤,包括:
确定当前需要修正的曝光点,得到当前修正对象;
平移当前修正对象至所述反馈坐标系的预设位置上;
返回执行确定当前需要修正的曝光点的步骤,直到所有曝光点均修正完毕。
需要说明的是,在本实施例中,构建曝光点集合的反馈坐标系的方法有很多种,可以直接根据曝光点的位置构建曝光点的反馈坐标系,也可以根据每个曝光点对应的图案构建反馈坐标系。比如,在步骤(11)中获取得到多个曝光图案,然后再对单个曝光图案进行处理,可以得到单个曝光图案的放大图。该放大图如图4所示。然后,再根据单个曝光图案的放大图在预设查询表中查询该放大图对应的数值。紧接着,再根据该数值构建反馈坐标系。
本申请实施例提供的提高曝光精度的方法,在基板上形成曝光区域后,首先提取曝光区域中的曝光点,得到曝光点集合。然后检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合。接着基于曝光偏移值集合,修正每个曝光偏移值对应的曝光点。在本申请实施例中,基于曝光点的偏移值对曝光点进行修正,可以有效地提高曝光精度,从而提高产品良率。
本申请还提供一种提高曝光精度的装置,并且以下简称装置,请参阅图5,该装置可以包括曝光单元201、提取单元202、检测单元203以及修正单元204。具体可以如下:
曝光单元201,用于在基板上形成曝光区域;
提取单元202,用于提取曝光区域中的曝光点,得到曝光点集合;
检测单元203,用于检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;
修正单元204,用于修正每个曝光偏移值对应的曝光点。
在一些实施例中,提取单元202具体可以用于:
获取曝光区域中的曝光图案,得到多个曝光图案;
提取每个曝光图案的曝光点,得到每个曝光图案对应的曝光点子集合;
根据多个曝光点子集合,确定曝光点集合。
在一些实施例中,检测单元203具体用于:
获取曝光点集合中每个曝光点对应的曝光值;
计算每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;
根据多个曝光偏移值,构建曝光偏移值集合。
本申请实施例提供的提高曝光精度的装置,曝光单元201在基板上形成曝光区域后,提取单元202提取曝光区域中的曝光点,得到曝光点集合。然后检测单元203检测曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合。接着基于曝光偏移值集合,修正单元204修正每个曝光偏移值对应的曝光点。在本申请实施例中,基于曝光点的偏移值对曝光点进行修正,可以有效地提高曝光精度,从而提高产品良率。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种提高曝光精度的方法以及装置进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
Claims (15)
- 一种提高曝光精度的方法,其包括:在基板上形成曝光区域;提取所述曝光区域中的曝光点,得到曝光点集合;检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;基于所述曝光偏移值集合,修正每个曝光偏移值对应的曝光点。其中,所述检测所述曝光区域中的曝光点,得到曝光点集合的步骤,包括:获取所述曝光区域中的曝光图案,得到多个曝光图案;提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合;根据多个所述曝光点子集合,确定曝光点集合;所述检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合的步骤,包括:获取所述曝光点集合中每个曝光点对应的曝光值;计算所述每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;根据所述多个曝光偏移值,构建曝光偏移值集合。
- 根据权利要求1所述的方法,其中,在所述提取每个所述曝光图案的曝光点的步骤之前,所述获取所述曝光区域中的曝光图案,得到多个曝光图案的步骤之后,还包括:检测所述多个曝光图案的图像清晰度;获取所述图像清晰度满足预设条件的曝光图案,得到多个待提取曝光图案;所述提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合的步骤,包括:提取每个所述待提取曝光图案的曝光点,得到每个所述待提取曝光图案对应的曝光点子集合。
- 根据权利要求2所述的方法,其中,所述获取所述图像清晰度满足预设条件的曝光图案,得到多个待提取曝光图案的步骤,包括:确定当前需要处理的曝光图案,得到当前处理对象;判断所述当前处理对象的图像清晰度是否满足预设条件;若所述当前处理对象的图像清晰度满足预设条件,则确定所述当前处理对象为待提取曝光图案;返回执行确定当前需要处理的曝光图案,直到所有曝光图案均判断完毕。
- 根据权利要求1所述的方法,其中,所述基于所述曝光偏移值集合,修正每个曝光偏移值对应的曝光点的步骤,包括:基于所述曝光偏移值集合,构建所述曝光点集合的反馈坐标系;标记每个曝光点在所述反馈坐标系中的坐标,得到每个曝光点对应的反馈坐标;根据所述每个曝光点对应的曝光偏移值,修正所述每个曝光点对应反馈坐标。
- 根据权利要求4所述的方法,其中,所述根据所述每个曝光点对应的曝光偏移值,修正所述每个曝光点对应反馈坐标的步骤,包括:确定当前需要修正的曝光点,得到当前修正对象;平移所述当前修正对象至所述反馈坐标系的预设位置上;返回执行确定当前需要修正的曝光点的步骤,直到所有曝光点均修正完毕。
- 一种提高曝光精度的方法,其包括:在基板上形成曝光区域;提取所述曝光区域中的曝光点,得到曝光点集合;检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;基于所述曝光偏移值集合,修正每个曝光偏移值对应的曝光点。
- 根据权利要求6所述的方法,其中,所述提取所述曝光区域中的曝光点,得到曝光点集合的步骤,包括:获取所述曝光区域中的曝光图案,得到多个曝光图案;提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合;根据多个所述曝光点子集合,确定曝光点集合。
- 根据权利要求7所述的方法,其中,在所述提取每个所述曝光图案的曝光点的步骤之前,所述获取所述曝光区域中的曝光图案,得到多个曝光图案的步骤之后,还包括:检测所述多个曝光图案的图像清晰度;获取所述图像清晰度满足预设条件的曝光图案,得到多个待提取曝光图案;所述提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合的步骤,包括:提取每个所述待提取曝光图案的曝光点,得到每个所述待提取曝光图案对应的曝光点子集合。
- 根据权利要求8所述的方法,其中,所述获取所述图像清晰度满足预设条件的曝光图案,得到多个待提取曝光图案的步骤,包括:确定当前需要处理的曝光图案,得到当前处理对象;判断所述当前处理对象的图像清晰度是否满足预设条件;若所述当前处理对象的图像清晰度满足预设条件,则确定所述当前处理对象为待提取曝光图案;返回执行确定当前需要处理的曝光图案,直到所有曝光图案均判断完毕。
- 根据权利要求6所述的方法,其中,所述检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合的步骤,包括:获取所述曝光点集合中每个曝光点对应的曝光值;计算所述每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;根据所述多个曝光偏移值,构建曝光偏移值集合。
- 根据权利要求6所述的方法,其中,所述基于所述曝光偏移值集合,修正每个曝光偏移值对应的曝光点的步骤,包括:基于所述曝光偏移值集合,构建所述曝光点集合的反馈坐标系;标记每个曝光点在所述反馈坐标系中的坐标,得到每个曝光点对应的反馈坐标;根据所述每个曝光点对应的曝光偏移值,修正所述每个曝光点对应反馈坐标。
- 根据权利要求11所述的方法,其中,所述根据所述每个曝光点对应的曝光偏移值,修正所述每个曝光点对应反馈坐标的步骤,包括:确定当前需要修正的曝光点,得到当前修正对象;平移所述当前修正对象至所述反馈坐标系的预设位置上;返回执行确定当前需要修正的曝光点的步骤,直到所有曝光点均修正完毕。
- 一种提高曝光精度的装置,其包括:曝光单元,用于在基板上形成曝光区域;提取单元,用于提取所述曝光区域中的曝光点,得到曝光点集合;检测单元,用于检测所述曝光点集合中每个曝光点对应的曝光偏移值,得到曝光偏移值集合;修正单元,用于修正每个曝光偏移值对应的曝光点。
- 根据权利要求13所述的装置,其中,所述提取单元具体用于:获取所述曝光区域中的曝光图案,得到多个曝光图案;提取每个所述曝光图案的曝光点,得到每个所述曝光图案对应的曝光点子集合;根据多个所述曝光点子集合,确定曝光点集合。
- 根据权利要求13所述的装置,其中,所述检测单元具体用于:获取所述曝光点集合中每个曝光点对应的曝光值;计算所述每个曝光点对应的曝光值与预设基准值之间的差值,以得到多个曝光偏移值;根据所述多个曝光偏移值,构建曝光偏移值集合。
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| KR20170141445A (ko) * | 2016-06-15 | 2017-12-26 | 이영규 | 옵셋인쇄용 인쇄원판 및 이를 제작하는 방법 |
| CN109143794A (zh) * | 2018-09-28 | 2019-01-04 | 武汉华星光电技术有限公司 | 提高曝光精度的方法以及装置 |
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| Publication number | Publication date |
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| CN109143794A (zh) | 2019-01-04 |
| US20200133138A1 (en) | 2020-04-30 |
| CN109143794B (zh) | 2021-01-01 |
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