WO2020062541A1 - 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统 - Google Patents

搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统 Download PDF

Info

Publication number
WO2020062541A1
WO2020062541A1 PCT/CN2018/118511 CN2018118511W WO2020062541A1 WO 2020062541 A1 WO2020062541 A1 WO 2020062541A1 CN 2018118511 W CN2018118511 W CN 2018118511W WO 2020062541 A1 WO2020062541 A1 WO 2020062541A1
Authority
WO
WIPO (PCT)
Prior art keywords
cavity
shelf
tray
loading
support
Prior art date
Application number
PCT/CN2018/118511
Other languages
English (en)
French (fr)
Inventor
庞云玲
南建辉
丁建
Original Assignee
深圳市永盛隆科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市永盛隆科技有限公司 filed Critical 深圳市永盛隆科技有限公司
Publication of WO2020062541A1 publication Critical patent/WO2020062541A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Definitions

  • the invention belongs to the technical field of substrate transfer of a MOCVD system, and particularly relates to a shelf, a carrier disk, a tray, a buffer cavity, a loading cavity, and a substrate transfer system.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • the robotic arm and a plurality of epitaxial reaction chambers can be used to automatically transfer a wafer tray to each epitaxial reaction chamber, thereby improving production efficiency.
  • a plurality of substrates 002 are placed on one tray 001.
  • a plurality of substrates 002 are usually placed on the tray 001 one by one. After the upper substrate 002 is full, the entire tray 001 is transferred.
  • the present invention provides a shelf, a carrier tray, a tray, a buffer cavity, a loading cavity, and a substrate transfer system, which solves the problem of inconvenience of taking and placing in the prior art.
  • the main technical solutions adopted by the present invention include:
  • the support includes N support columns parallel to each other and two connection plates; two ends of the N support columns parallel to each other are connected through a connection plate to form an N
  • the accommodation space of the rectangular cross section, N is a positive integer greater than or equal to 3
  • the bracket further includes at least one set of support structures, each set of support structures is used to carry a disk; the driving device is drivingly connected with the connecting plate, and the driving device is used for Drive the bracket to rotate.
  • the entire shelf has a simple structure and is easy to operate. By rotating on the N sides of the entire shelf, the tray can be freely taken and placed, which is more convenient to take and place, and is suitable for large-scale applications.
  • the driving device is disposed outside the bracket, and the end of the output end of the driving device is connected to at least one connecting plate.
  • the rotating shaft included in the driving device is connected to the bracket outside the bracket, and does not penetrate the above-mentioned accommodating space, so that the N sides of the shelf can freely extract the disk.
  • each of the above-mentioned support structures includes N support blocks which are respectively disposed at the same horizontal position on the N support columns, and the support blocks are used for positioning the discs.
  • the opening directions of the supporting blocks are opposite.
  • the above-mentioned support block is provided with a step-like positioning groove in the area away from the support column.
  • the area surrounded by the positioning grooves of the N support blocks of each group of support structure and the area of the disk equal.
  • the above-mentioned support structure is formed by providing a support block, which is simple in structure and convenient to install, and can freely take and place the tray on the N sides of the shelf, which is more convenient to take and place.
  • the shelf further comprises at least one heating device for preheating the tray. So that the shelf satisfies the function of preheating the tray.
  • the shelf further comprises at least one cooling device for cooling the tray. So that the shelf satisfies the function of cooling the tray.
  • the carrying tray is a tray in the above-mentioned shelf.
  • the carrying tray is provided with a plurality of workpiece positions arranged around the central axis of the accommodating space of the shelf. Used to carry a substrate.
  • the substrate can be placed on a carrier disk in an array of n ⁇ n (n ⁇ 2).
  • the tray is a disk in the above-mentioned shelf.
  • the tray is provided with a plurality of workpiece positions arranged around the central axis of the accommodating space of the shelf, and each workpiece position is used for carrying.
  • a carrying tray is provided.
  • the carrier disk can be placed on the tray in an array of n ⁇ n (n ⁇ 2).
  • Another aspect of the present invention provides a buffer cavity, including a plurality of the first shelves described above.
  • the N side surfaces of the first shelf in the buffer cavity can freely pick and place the disk, which is more convenient to pick and place and improves the transmission efficiency.
  • a further aspect of the present invention provides a loading cavity, including a preheating cavity and a cooling cavity.
  • the preheating cavity includes the above-mentioned second shelf
  • the cooling cavity includes the above-mentioned second shelf.
  • the N sides of the second shelf in the preheating chamber and the cooling chamber of the loading chamber can be freely placed and placed, which is more convenient to place and improve the transmission efficiency.
  • a substrate transfer system including: a buffer cavity, a loading cavity, a first robot arm, and a second robot arm; as described above, each of the first shelves included in the buffer cavity is also used for supporting Put a plurality of the above-mentioned carrier trays; a first manipulator for loading a plurality of substrates on each of the carrier trays of the first rack; a second manipulator for removing the plurality of carrier trays from the first rack And loaded on the tray of the second shelf; the loading cavity is as described above, and the plurality of second shelves included in the loading cavity are used for receiving a plurality of the above-mentioned trays.
  • the entire substrate transfer system is provided with a carrier disk on the first shelf of the buffer chamber and a tray on the second shelf of the loading chamber. During the transfer, the substrate is first transferred to the carrier disk, and then the carrier is loaded. The disc and the substrate carried thereon are continuously transferred to the corresponding tray as a transfer unit for different processes.
  • This transfer method can reduce the number of times the substrate is loaded, greatly save the transfer time, and speed up the entire transfer cycle. It greatly shortens the entire process time and speeds up the production cycle, which can meet the large-capacity and high-efficiency demand of MOCVD systems with large size and fast cycle production.
  • the substrate transfer system further includes a reaction chamber; the reaction chamber includes a third shelf, the third shelf is used to carry a tray, and the third shelf is the aforementioned shelf; the second of the preheating chambers of the loading cavity
  • the number of shelves is greater than or equal to the number of third shelves in the reaction chamber, and the number of layers of the second shelf in the cooling chamber of the loading chamber is greater than the number of third shelves in the reaction chamber in order to meet the entire production cycle.
  • the design of the manipulator, the number of shelves in the buffer chamber, the number of trays in the loading chamber, and the number of reaction chambers all depend on the actual production cycle requirements.
  • the buffer cavity is a sealed cavity.
  • the buffer cavity further includes a first sealed door and a second sealed door.
  • the first sealed door is opened when the first manipulator picks up and places the parts from the buffer cavity, and the second sealed door is in the second manipulator. Open when picking up and placing parts from the buffer cavity.
  • the buffer cavity, the loading cavity, and the reaction cavity are all designed as a sealed structure cavity, in order to realize the isolation of the substrate from the air, prevent the entry of external pollution, and ensure the quality of the epitaxial wafer.
  • the first sealed door and the second sealed door respectively include Z sealed areas, and each of the Z sealed areas is opened separately, or W of the Z sealed areas are opened simultaneously, and Z is 2 or more.
  • the plurality of sealing areas are provided on the first sealing door and the second sealing door.
  • the purpose is also to achieve the sealing performance during substrate transmission, so that the sealing areas will not affect each other, which ensures the Hermeticity prevents the entry of external pollution and ensures the quality of the epitaxial wafer.
  • the substrate transfer system further includes a transfer cavity.
  • the second robot arm is disposed in the transfer cavity.
  • the transfer cavity is a sealed cavity.
  • the buffer cavity, the reaction cavity, and the loading cavity are respectively arranged around the transfer cavity.
  • the cavity constitutes a sealed transmission cavity.
  • the transfer cavity is also set as a sealed cavity, and its purpose is also to achieve the sealing performance when the substrate is transferred.
  • the substrate transfer system further includes a wafer loading chamber and a wafer cassette set; the first robot arm is disposed in the wafer loading chamber, the wafer loading chamber is a sealed cavity, and the buffer chamber and the wafer cassette group are respectively set around the wafer loading chamber to buffer The cavity and the wafer cassette set constitute a sealed loading cavity.
  • the chip loading cavity is also set as a sealed cavity, and its purpose is also to achieve the sealing performance when the substrate is transferred.
  • FIG. 1 is a schematic structural diagram of a tray and a substrate in the prior art
  • FIG. 2 is a schematic structural diagram of a shelf provided in the following embodiment
  • FIG. 3 is a schematic structural diagram of a carrier disk provided by the following embodiment
  • FIG. 4 is a schematic structural diagram of a tray provided by the following embodiment
  • FIG. 5 is a schematic structural diagram of a buffer cavity provided in the following embodiment
  • FIG. 6 is a schematic structural diagram of a loading cavity provided in the following embodiment
  • FIG. 7 is a schematic structural diagram of a substrate transmission system provided in the following embodiments.
  • the support includes N support columns 1 parallel to each other and two connecting plates. The two ends of the N mutually parallel support columns 1 are respectively connected by a connecting plate to form an accommodation space with an N-shaped cross section, where N is a positive integer greater than or equal to 3.
  • the support also includes at least one set of support structures, each set of support structures being used to carry a disc.
  • the driving device is drivingly connected with the connecting plate, and the driving device is used for driving the bracket to rotate.
  • the tray can be freely taken and placed, which is more convenient.
  • the entire shelf has a simple structure and simple operation, which is suitable for large-scale applications.
  • the above-mentioned driving device is disposed outside the bracket, and the end of the output end of the driving device is connected to at least one connecting plate. That is, the rotating shaft included in the driving device is connected to the bracket outside the bracket, and does not penetrate the above-mentioned accommodating space, so that the N sides of the shelf can freely extract the disk.
  • each of the above-mentioned support structures includes N support blocks 13 respectively disposed at the same horizontal position on the N support columns 1, and the support blocks 13 are used for positioning a disc shape.
  • the opening directions of the N supporting blocks 13 included in each group of supporting structures are opposite.
  • the support block 13 is provided with a step-like positioning groove 12 in an area away from the support column 1.
  • the area surrounded by the positioning grooves 12 of the N support blocks 13 of each group of support structure is similar to the disc shape. The areas of objects are equal.
  • the above-mentioned supporting structure is formed by providing the supporting block 13, which is simple in structure and convenient to install.
  • the N-sides of the shelf can freely take and place the disk, which is more convenient.
  • the tray can be lifted into the area above the support block 13 by the following manipulator, and then the tray is positioned in the positioning groove 12 to achieve the positioning of the tray. easy and convenient.
  • FIG. 2 in this embodiment is merely an example and is not limited thereto.
  • the above-mentioned shelf further includes at least one heating device 53 for pre-heating the disc or at least one cooling device 55 for cooling the disc, so that the shelf satisfies The pan is preheated or cooled.
  • a heating device 53 or a cooling device 55 may be provided between each two adjacent discs to make the preheating or cooling more uniform and more convenient for process control.
  • the present application further provides a carrier tray.
  • the carrier tray is a tray in the above-mentioned shelf.
  • the carrier tray 2 is provided with a receiving space surrounding the shelf.
  • a plurality of workpiece positions are arranged on the central axis of the workpiece, and each workpiece position is used to carry a substrate 21.
  • the present application further provides a tray.
  • the tray is a disc in the above-mentioned shelf.
  • the tray 3 is provided with a central axis surrounding the accommodating space of the shelf.
  • a plurality of workpiece positions are arranged, and each workpiece position is used to carry a load tray 2.
  • the structure of the discs in the above-mentioned shelf is selected as the above-mentioned carrier disc 2 or tray 3, which is specifically determined according to the functional requirements of the shelf.
  • the tray 2 in the first rack 41 in the buffer chamber 4 described below uses the carrier tray 2
  • the tray 3 in the second rack 51 in the loading chamber 5 described below uses the tray 3.
  • the workpiece positions on the loading tray 2 or the tray 3 are designed to be arranged around the center axis of the accommodating space of the shelf, which is more convenient for the robots to transfer the workpieces described below, and also improves the quality of the epitaxial wafer. n ⁇ n (n ⁇ 2) array placement.
  • the present application further provides a buffer cavity including a plurality of the first shelves 41 described above, and N sides of the first shelf 41 in the buffer cavity 4 can be freely It is more convenient to pick and place the disk, and improve the transmission efficiency.
  • the buffer cavity 4 in the present application is used in a substrate transfer system, which is used to place a substrate to be processed and a processed substrate, and plays a buffering role in the transfer process.
  • the first shelf 41 in the buffer cavity 4 of this embodiment does not include structures such as cooling and heating.
  • the present application further provides a loading cavity, including a preheating cavity 52 and a cooling cavity 54, and the preheating cavity 52 includes the second shelf 51 provided with the heating device 53 described above.
  • the cooling chamber 54 includes the second shelf 51 provided with the cooling device 55 described above.
  • the pre-heating chamber 52 and the cooling chamber 54 of the loading chamber 5 can freely pick and place the disks on the N sides of the second shelf 51, which is more convenient to pick and place and improves the transmission efficiency.
  • the loading chamber 5 in the present application is used in a substrate transport system, and is used for preheating the substrate 21 to be processed and cooling the substrate 21 after the reaction.
  • this implementation For example, cooling and heating are required.
  • at least one cooling or at least one heating structure may be provided in the second shelf 51.
  • the preheating cavity 52 and the cooling cavity 54 are separated by a partition wall 56 and coaxially arranged up and down.
  • the driving device of the second shelf 51 in the preheating cavity 52 and the driving of the second shelf 51 in the cooling cavity 54 The device simultaneously receives a driving instruction to drive the second shelf 51 in the preheating cavity 52 and the second shelf 51 in the cooling cavity 54 to rotate at the same time, which simplifies the structure of the entire device.
  • the second shelf 51 in the preheating cavity 52 and the second shelf 51 in the cooling cavity 54 can also be controlled to rotate separately, which is not limited in this embodiment, and is set according to actual needs.
  • the present application further provides a substrate transfer system.
  • the substrate transfer system includes a buffer cavity 4, a loading cavity 5, a first robot arm 6, and a second robot arm 8, wherein
  • the buffer cavity is the above-mentioned buffer cavity 4, and each of the first shelves 41 included in the buffer cavity 4 is further configured to receive a plurality of the above-mentioned carrier disks 2.
  • the first robot hand 6 is used to load a plurality of substrates 21 on each of the carrier trays 2 of the first shelf 41
  • the second robot hand 8 is used to take out a plurality of carrier disks 2 from the first rack 41 and load it on On the tray 3 of the second shelf 51.
  • the loading chamber 5 is the above-mentioned loading chamber 5, and the plurality of second shelves 51 included in the loading chamber 5 are used to receive a plurality of the trays 3 described above.
  • the entire substrate transfer system is provided with a carrier tray 2 on the first shelf 41 of the buffer chamber 4 and a tray 3 on the second shelf 51 of the loading chamber 5, and the substrate is first transferred during the transfer.
  • 21 is transferred to the carrier tray 2, and then the carrier tray 2 and the substrate 21 carried thereon are used as a transmission unit to continuously transfer to the corresponding tray 3 for different processes.
  • This transmission method can reduce the loading of the substrate 21 The number of times greatly saves the transmission time and speeds up the beat of the entire transmission.
  • the same substrate 21 is loaded, and the time taken by the substrate transfer system in this embodiment is shorter.
  • the time required for the entire process from a substrate 21 to the substrate 21 after processing is generally more than an hour, and in this embodiment, the time required for this process is less than half an hour. Generally, it is about 10-20 minutes, which greatly shortens the entire process time and speeds up the production cycle. It can meet the needs of large capacity and high efficiency of the MOCVD system with large size and fast cycle production.
  • the plurality of first shelves 41 in the buffer chamber 4 are arranged in sequence as shown in FIG. 7, and the first shelves 41 for placing the substrate 21 to be processed and the first shelves 41 for placing the processed substrate
  • the first shelves 41 of the substrate 21 are separated by a partition plate, which is more convenient for processing.
  • the arrangement manner of the plurality of first shelves 41 in the buffer cavity 4 can also be set as required.
  • FIG. 7 in this embodiment is merely an example and is not limited thereto.
  • the above-mentioned substrate transfer system further includes a reaction chamber 7, which includes a third shelf 71, the third shelf 71 is used to carry one of the trays 3 described above, and the third shelf 71 is any of the shelves described above (The third shelf 71 in this embodiment is provided with only one layer).
  • the number of layers of the second rack 51 in the preheating chamber 52 of the loading chamber 5 is greater than or equal to the number of the third racks 71 in the reaction chamber 7, and the second rack in the cooling chamber 54 of the loading chamber 5
  • the number of layers 51 is larger than the number of the third shelves 71 in the reaction chamber 7 to meet the requirements of the entire production cycle.
  • a sealing area is also provided in the buffer chamber 4, the loading chamber 5 or the reaction chamber 7, so as to realize the isolation of the substrate 21 from the air, prevent the entry of external pollution, and ensure the quality of the epitaxial wafer.
  • the buffer chamber 4 is a sealed chamber.
  • the buffer chamber 4 further includes a first sealed door and a second sealed door.
  • the first sealed door is opened when the first manipulator 6 picks up and places the parts from the buffer chamber 4, and the second sealed door is at
  • the second manipulator 8 is opened when picking and placing parts from the buffer cavity 4 to ensure the tightness of the substrate 21 during the transport process, prevent the entry of external pollution, and ensure the quality of the epitaxial wafer.
  • the first sealed door and the second sealed door respectively include Z sealed areas, and each of the Z sealed areas is individually opened, or W of the Z sealed areas are opened simultaneously, and Z is greater than A positive integer equal to 2 and W is a positive integer equal to or greater than 1 and less than or equal to Z.
  • the separate opening mentioned here means that each of the Z sealing areas is individually opened, that is, when one of the sealing areas is opened, the remaining sealing areas are closed.
  • Simultaneous opening refers to the simultaneous operation of W of the Z sealed areas. It can be that some of the W sealed areas are opening, some of them are closing, or some are in the intermediate state of opening and closing. That is, the W sealed areas are only in the working state at the same time, but the working state is not limited, and may be the same or different.
  • each of the Z sealing areas can be used to seal more than one first shelf 41, and can also be used to seal more than one layer of the tray 2 in any of the first shelves 41.
  • first shelves 41 are provided in the buffer chamber 4, and each of the first shelves 41 is provided with eight layers. Two of the first shelves 41 are used to place the substrate 21 to be processed. Two first shelves 41 are used to place the processed substrate 21.
  • the first sealed door and the second sealed door may be respectively provided with eight sealing areas, and each sealing area individually seals four layers in a first shelf 41. In this way, when the manipulator picks up and puts the part to one of the first shelves 41, the sealing area corresponding to the workpiece is opened, and the sealing area is closed after the operation is completed. Thereby, other sealing areas can be made unaffected, the sealing performance of the substrate 21 during transmission can be ensured, the entry of external pollution can be prevented, and the quality of the epitaxial wafer can be guaranteed.
  • the opening or closing of all sealed areas is automatically controlled.
  • the sealed area can be controlled to open.
  • the above-mentioned substrate transfer system further includes a transfer cavity 9, and the second robot arm 8 is disposed in the transfer cavity 9, the transfer cavity 9 is a sealed cavity, and the buffer cavity 4, the reaction cavity 7, and the loading cavity 5 are respectively wound.
  • the transmission chamber 9 is provided, and the buffer chamber 4, the reaction chamber 7 and the loading chamber 5 constitute a sealed transmission chamber 9.
  • the transmission cavity 9 is also provided as a sealed cavity, and its purpose is also to achieve the sealing performance when the substrate 21 is transmitted.
  • the above-mentioned substrate transfer system further includes a wafer loading chamber 10 and a wafer cassette group 11.
  • the first robot 6 is disposed in the wafer loading chamber 10.
  • the wafer loading chamber 10 is a sealed chamber, the buffer chamber 4 and the wafer cassette group 11.
  • the wafer loading chambers 10 are respectively provided, and the buffer chamber 4 and the wafer cassette group 11 constitute a sealed wafer loading chamber 10.
  • the chip loading cavity 10 is also configured as a sealed cavity, and its purpose is also to achieve the sealing performance when the substrate 21 is transferred.
  • the wafer cassette group 11 includes a first wafer cassette group and a second wafer cassette group, which are respectively used to place the substrate 21 to be processed and the processed substrate 21.
  • the first manipulator 6 is mainly responsible for transferring the substrates 21 to be processed in the first wafer cassette group to the carrier disk 2 in the buffer chamber 4, or transferring the processed substrates 21 on the carrier disk 2 in the buffer chamber 4 to the first Two wafer cassettes in the group.
  • the second manipulator 8 is mainly responsible for transferring the carrier disk 2 between the buffer chamber 4 and the loading chamber 5 and between the loading chamber 5 and the reaction chamber 7.
  • the wafer box group 11 all work in the atmospheric environment, and the requirements of the vacuum degree in the chambers of the loading chamber 5, the buffer chamber 4, the transfer chamber 9, the loading chamber 10 and the reaction chamber 7 are from low to high.
  • Each chamber can be connected with a vacuum pump and controlled automatically to ensure the vacuum requirements in each chamber.
  • the layout and architecture of each cavity in the system shown in FIG. 7 are only exemplary and not limitative.
  • the number of reaction chambers 7 and the number of layers of each shelf and their layouts can be determined according to specific The design needs to be adaptively adjusted, which is not limited in this embodiment.
  • the first and second robots 6 and 8 are generally designed to be able to move up and down.
  • a structure realizes its up and down movement, so that only the height of the manipulator can be adjusted to realize the workpieces on various levels in the shelf, which is simple and convenient.
  • the first robot 6 can also be designed to move up and down or move horizontally, so that the first robot 6 can access the wafer cassette group 11 at various positions. Substrate 21.
  • both the first robot 6 and the second robot 8 can adopt dual-arm robots.
  • the arms of the robots can perform the same motion at the same time, or they can complete different motions separately to improve the transmission efficiency.
  • the first robot 6 and the second robot 8 may also be designed in other forms, which are not limited in this embodiment.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种搁架，包括支架和驱动装置，支架包括N个相互平行的支撑柱（1）以及两个连接板；N个相互平行的支撑柱（1）的两端分别通过连接板连接，组成具有N边形截面的容置空间，N为大于等于3的正整数；支架还包括至少一组支撑结构，每组支撑结构用于承载一个盘状物；驱动装置与连接板传动连接，驱动装置用于驱动支架转动。还公开了一种承载盘（2）、托盘（3）、缓冲腔（4）、装载腔（5）及基片传输系统。

Description

搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统
本申请是以专利申请号为201811123065.X、专利申请日为2018年9月26日的专利申请作为优先权基础。
技术领域
本发明属于MOCVD系统的基片传输技术领域，具体涉及一种搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统。
背景技术
金属有机化学气相沉积(Metalorganic Chemical Vapor Deposition,MOCVD)是利用Ⅲ族有机金属反应物，与Ⅴ族氢化物发生反应，在加热的衬底上生成Ⅲ、Ⅴ族化合物薄膜。
在一种是机械手传输基片的MOCVD系统及其操作方法中，包括机械手和多个外延反应腔，能够实现自动的将载片盘传输至各个外延反应腔，提高了生产效率。
例如，图1所示的托盘和基片的结构，在一个托盘001上放置很多个基片002，在进行传输时往往是先将多个基片002一个一个放到托盘001上，待托盘001上的基片002放满后再将整个托盘001传输。
但是，由于托盘001的面积很大(有的甚至达到3m 2左右)，导致将托盘001上的基片002取放极其不方便，耗时过长，跟不上生产节拍。
发明内容
(一)要解决的技术问题
为了解决现有技术的上述问题，本发明提供一种搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统，解决了现有技术中存在的取放不方便的问题。
(二)技术方案及效果
为了达到上述目的，本发明采用的主要技术方案包括：
本发明一方面提供一种搁架，包括支架和驱动装置，支架包括N个相互平行的支撑柱以及两个连接板；N个相互平行的支撑柱的两端分别通过连接板连接，组成具有N边形截面的容置空间，N为大于等于3的正整数；支架还包括至少一组支撑结构，每组支撑结构用于承载一个盘状物；驱动装置与连接板传动连接，驱动装置用于驱动支架转动。
整个搁架结构简单，操作简便，通过旋转在整个搁架的N个侧面可以随意取放盘状物，取放更加方便，适合大规模应用。
可选地，驱动装置设在支架的外部，且驱动装置的输出端的末端与至少一个连接板连接。
也就是说，驱动装置包括的旋转轴在支架的外部与支架连接，并不穿透上述的容置空间，以使搁架的N个侧面可以随意抽取盘状物。
在具体的例子中，上述的每一组支撑结构包括分别设置在N个支撑柱上相同水平位置的N个支撑块，支撑块用于定位盘状物，每一组支撑结构中包括的N个支撑块的开口方向相对。
为进行盘状物的定位，上述的支撑块上远离支撑柱的区域设置有阶梯状的定位槽，每一组支撑结构的N个支撑块的定位槽所围成的面积与盘状物的面积相等。
由此，通过设置支撑块形成上述的支撑结构，结构简单，安装方便，在搁架的N个侧面可以随意取放盘状物，取放更加方便。
可选地，搁架还包括至少一个用于对盘状物进行预热的加热装置。以使搁架满足对盘状物进行预热的功能。
可选地，搁架还包括至少一个用于对盘状物进行冷却的冷却装置。以使搁架满足对盘状物进行冷却的功能。
本发明另一方面提供一种承载盘，承载盘为上述的搁架中的盘状物，承载盘上设有围绕搁架的容置空间的中心轴线布置的多个工件位，每个工件位用于承载一个基片。
工件位采用此种设置方式，更便于基片的传输，例如可以将基片在 承载盘上按照n×n(n≧2)的阵列放置。
本发明再一方面提供一种托盘，托盘为上述的搁架中的盘状物，托盘上设有围绕搁架的容置空间的中心轴线布置的多个工件位，每个工件位用于承载一个承载盘。
工件位采用此种设置方式，更便于承载盘的传输，例如可以将承载盘在托盘上按照n×n(n≧2)的阵列放置。
本发明再一方面提供一种缓冲腔，包括多个上述的第一搁架。
上述缓冲腔中第一搁架的N个侧面可以随意取放盘状物，取放更加方便，提高传输效率。
本发明再一方面提供一种装载腔，包括预热腔和冷却腔，预热腔包括上述的第二搁架，冷却腔包括上述的第二搁架。
上述装载腔的预热腔和冷却腔中第二搁架的N个侧面均可以随意取放盘状物，取放更加方便，提高传输效率。
本发明再一方面提供一种基片传输系统，包括：缓冲腔、装载腔、第一机械手和第二机械手；缓冲腔如上所述，缓冲腔中包括的每个第一搁架还用于承放多个上述的承载盘；第一机械手，用于将多个基片装载在第一搁架的每个承载盘上；第二机械手，用于将多个承载盘从第一搁架上取出并装载在第二搁架的托盘上；装载腔如上所述，装载腔中包括的多个第二搁架用于承放多个上述的托盘。
整个基片传输系统通过在缓冲腔的第一搁架上设有承载盘以及在装载腔的第二搁架上设有托盘，在进行传输时先将基片传输到承载盘上，再以承载盘和上面承载的基片作为一个传输单元不断进行传输到相应的托盘上进行不同的工艺过程，此种传输的方式能够降低装载基片的次数，大大节省了传送时间，加快了整个传输的节拍，大大缩短了整个工艺时间，加快了生产节拍，能够满足大尺寸、快节拍生产的MOCVD系统的大产能和高效率的需求。
可选地，基片传输系统还包括反应腔；反应腔包括第三搁架，第三 搁架用于承载一个托盘，第三搁架为上述的搁架；装载腔的预热腔中第二搁架的层数大于或等于反应腔中第三搁架的个数，装载腔的冷却腔中第二搁架的层数大于反应腔中第三搁架的个数，以满足整个生产节拍的要求。
其中，机械手的设计、缓冲腔内的搁架数目、装载腔中托盘的数目以及反应腔的个数均根据实际生产节拍的要求具体而定。
可选地，缓冲腔为密封腔体，缓冲腔还包括第一密封门和第二密封门，第一密封门在第一机械手向缓冲腔取放件时开启，第二密封门在第二机械手向缓冲腔取放件时开启。
在具体的例子中，缓冲腔、装载腔和反应腔均设计为密封结构的腔体，以便实现基片与空气的隔离，防止外界污染的进入，保证外延片的质量。
可选地，第一密封门和第二密封门分别包括Z个密封区域，Z个密封区域中的每个密封区域单独开启，或Z个密封区域中的W个同时开启，Z为大于等于2的正整数，W为大于等于1小于等于Z的正整数。
在第一密封门和第二密封门上设置多个密封区域，其目的也是为了实现基片传输时的密封性，使得证各个密封区域之间不会相互影响，保证了基片传输过程中的密封性，防止外界污染的进入，保证了外延片的质量。
可选地，基片传输系统还包括传输腔，第二机械手设置在传输腔内，传输腔为密封腔体，缓冲腔、反应腔和装载腔分别绕传输腔设置，缓冲腔、反应腔和装载腔构成密封的传输腔。将传输腔也设置成密封腔体，其目的也是实现基片传输时的密封性。
可选地，基片传输系统还包括装片腔和晶片盒组；第一机械手设置在装片腔内，装片腔为密封腔体，缓冲腔和晶片盒组分别绕装片腔设置，缓冲腔和晶片盒组构成密封的装片腔。将装片腔也设置成密封腔体，其目的也是实现基片传输时的密封性。
附图说明
图1为现有技术中托盘和基片的结构示意图；
图2为如下实施例中提供的搁架的结构示意图；
图3为如下实施例提供的承载盘的结构示意图；
图4为如下实施例提供的托盘的结构示意图；
图5为如下实施例提供的缓冲腔的结构示意图；
图6为如下实施例中提供的装载腔的结构示意图；
图7为如下实施例中提供的基片传输系统的结构示意图。
【附图标记说明】
001：托盘；002：基片；
1：支撑柱：12：定位槽；13：支撑块；
2：承载盘；21：基片；3：托盘；4：缓冲腔；41：第一搁架；
5：装载腔；51：第二搁架；52：预热腔；53：加热装置；54：冷却腔；55：冷却装置；56：间隔壁；
6：第一机械手；7：反应腔；71：第三搁架；8：第二机械手；9：传输腔；10：装片腔；11：晶片盒组。
具体实施方式
为了更好的解释本发明，以便于理解，下面结合附图，通过具体实施方式，对本发明作详细描述。
本申请一方面提供一种搁架，包括支架和驱动装置，支架包括N个相互平行的支撑柱1以及两个连接板。N个相互平行的支撑柱1的两端分别通过连接板连接，组成具有N边形截面的容置空间，N为大于等于3的正整数。支架还包括至少一组支撑结构，每组支撑结构用于承载一个盘状物。驱动装置与连接板传动连接，驱动装置用于驱动支架转动。
由此，通过旋转在整个搁架的N个侧面可以随意取放盘状物，取放 更加方便，同时整个搁架结构简单，操作简便，适合大规模应用。
在实际应用中，上述的驱动装置设在支架的外部，且驱动装置的输出端的末端与至少一个连接板连接。也就是说，驱动装置包括的旋转轴在支架的外部与支架连接，并不穿透上述的容置空间，以使搁架的N个侧面可以随意抽取盘状物。
在本申请的具体实施例中，如图2所示，上述的每一组支撑结构包括分别设置在N个支撑柱1上相同水平位置的N个支撑块13，支撑块13用于定位盘状物，每一组支撑结构中包括的N个支撑块13的开口方向相对。
为进行盘状物的定位，支撑块13上远离支撑柱1的区域设置有阶梯状的定位槽12，每一组支撑结构的N个支撑块13的定位槽12所围成的面积与盘状物的面积相等。
由此，通过设置支撑块13形成上述的支撑结构，结构简单，安装方便，在搁架的N个侧面可以随意取放盘状物，取放更加方便。在实际应用中，可以通过下述的机械手将盘状物先抬起放入支撑块13上方的区域，再将盘状物向下放置在定位槽12中就可以实现对盘状物的定位，简单方便。
当然，在实际应用中，上述的支撑结构可以根据实际需要选择其他任何能够承载盘状物的实现方式，本实施例中的图2仅为举例说明，并不对其进行限定。
在可能的实现方式中，上述的搁架还包括至少一个用于对盘状物进行预热的加热装置53或者至少一个用于对盘状物进行冷却的冷却装置55，以使搁架满足对盘状物进行预热或者冷却的功能。在实际应用中，可以在每相邻的两个盘状物之间均设置一个加热装置53或者冷却装置55，以使预热或者冷却更加均匀，更方便于工艺的控制。
根据本申请的另一方面，如图3所示，本申请还提供一种承载盘，该承载盘为上述的搁架中的盘状物，承载盘2上设有围绕搁架的容置空 间的中心轴线布置的多个工件位，每个工件位用于承载一个基片21。
根据本申请的再一方面，如图4所示，本申请还提供一种托盘，该托盘为上述的搁架中的盘状物，托盘3上设有围绕搁架的容置空间的中心轴线布置的多个工件位，每个工件位用于承载一个承载盘2。
在具体使用过程中，上述的搁架中的盘状物的结构选择为上述的承载盘2还是托盘3，具体根据对该搁架的实现功能需求而定。例如下述的缓冲腔4中第一搁架41中的盘状物使用的是承载盘2，下述的装载腔5中第二搁架51中的盘状物使用的是托盘3。将承载盘2或者托盘3上的工件位均设计成围绕搁架的容置空间的中心轴线布置，更方便于下述的机械手对工件的传输，也提高了外延片质量，例如可以将工件按照n×n(n≧2)的阵列放置。
根据本申请的再一方面，如图5所示，本申请还提供一种缓冲腔，包括多个上述的第一搁架41，该缓冲腔4中第一搁架41的N个侧面可以随意取放盘状物，取放更加方便，提高传输效率。
需要说明的是，本申请中的缓冲腔4是在基片传输系统中使用的，其用于放置待处理的基片以及处理后的基片，在传输过程中起到缓冲的作用，为此，本实施例的缓冲腔4中的第一搁架41不包括冷却和加热等结构。
根据本申请的再一方面，如图6所示，本申请还提供一种装载腔，包括预热腔52和冷却腔54，预热腔52包括上述设有加热装置53的第二搁架51，冷却腔54包括上述设有冷却装置55的第二搁架51。该装载腔5的预热腔52和冷却腔54内在第二搁架51的N个侧面均可以随意取放盘状物，取放更加方便，提高传输效率。
需要说明的是，本申请中的装载腔5是在基片传输系统中使用的，其用于对待处理的基片21进行预热以及对反应后的基片21进行冷却，为此，本实施例的需要冷却和加热，在具体实现中，可以在第二搁架51中设置至少一个冷却或至少一个加热结构。
在实际应用中，预热腔52和冷却腔54通过间隔壁56间隔并上下同轴设置，同时预热腔52内第二搁架51的驱动装置和冷却腔54内第二搁架51的驱动装置同时接收驱动指令，以驱动预热腔52内的第二搁架51和冷却腔54内的第二搁架51同时转动，更加简化整个装置的结构。当然，预热腔52内的第二搁架51与冷却腔54内的第二搁架51也可以分别控制旋转，本实施例对此并不进行限定，根据实际需要设定。
根据本申请的再一方面，如图7所示，本申请还提供一种基片传输系统，该基片传输系统包括缓冲腔4、装载腔5、第一机械手6和第二机械手8，其中，缓冲腔为上述的缓冲腔4，缓冲腔4中包括的每个第一搁架41还用于承放多个上述的承载盘2。第一机械手6用于将多个基片21装载在第一搁架41的每个承载盘2上，第二机械手8用于将多个承载盘2从第一搁架41上取出并装载在第二搁架51的托盘3上。装载腔5为上述的装载腔5，装载腔5中包括的多个第二搁架51用于承放多个上述的托盘3。
由此，整个基片传输系统通过在缓冲腔4的第一搁架41上设有承载盘2以及在装载腔5的第二搁架51上设有托盘3，在进行传输时先将基片21传输到承载盘2上，再以承载盘2和上面承载的基片21作为一个传输单元不断进行传输到相应的托盘3上进行不同的工艺过程，此种传输的方式能够降低装载基片21的次数，大大节省了传送时间，加快了整个传输的节拍。
与现有技术相比，装载相同的基片21，本实施例中的基片传输系统所用的时间更短。在实际应用中，现有技术中从一个基片21传输一直到基片21处理后整个工艺的时间一般需要一个小时以上，而本实施例中此工艺过程所需时间均在半个小时以内，一般在10～20分钟左右，大大缩短了整个工艺时间，加快了生产节拍，能够满足大尺寸、快节拍生产的MOCVD系统的大产能和高效率的需求。
在一个例子中，缓冲腔4中的多个第一搁架41按图7中示出的方式 依次排列，同时用于放置待处理的基片21的第一搁架41与用于放置处理后的基片21的第一搁架41之间用间隔板隔开，更方便于对工艺的处理。当然，缓冲腔4中多个第一搁架41的排列方式也可以根据需要进行设定，本实施例中的图7仅为举例说明，并不对其进行限定。
进一步地，上述的基片传输系统还包括反应腔7，反应腔7包括第三搁架71，第三搁架71用于承载一个上述的托盘3，第三搁架71为上述的任意搁架(本实施例中的第三搁架71仅设置了一层)。在实际应用中，装载腔5的预热腔52中第二搁架51的层数大于或者等于反应腔7中第三搁架71的个数，装载腔5的冷却腔54中第二搁架51的层数大于反应腔7中第三搁架71的个数，以满足整个生产节拍的要求。
由于基片21属于半导体，在进行处理过程中容易氧化，为此需要在处理过程中减少与空气的接触时间。由此，在本实施例中，还在缓冲腔4、装载腔5或反应腔7中设置有密封区域，以便实现基片21与空气的隔离，防止外界污染的进入，保证外延片的质量。
具体地，缓冲腔4为密封腔体，缓冲腔4还包括第一密封门和第二密封门，第一密封门在第一机械手6向缓冲腔4取放件时开启，第二密封门在第二机械手8向缓冲腔4取放件时开启，以保证基片21传输过程的密封性，防止外界污染的进入，保证了外延片的质量。在具体实现过程中，第一密封门和第二密封门分别包括Z个密封区域，Z个密封区域中的每个密封区域单独开启，或Z个密封区域中的W个同时开启，Z为大于等于2的正整数，W为大于等于1小于等于Z的正整数。
需要说明的是，这里所说的单独开启是指Z个密封区域中的每个密封区域各自单独打开，即其中一个密封区域打开时，其余密封区域均关闭。这里所说的同时开启是指Z个密封区域中的W个同时工作，可以是这W个密封区域中的一部分正在打开，也可以是一部分正在关闭，或者一部分正处于打开和关闭的中间状态，即这W个密封区域仅是同时处于工作状态，但是处于何种工作状态并不进行限定，可以相同也可以不同。
在实际应用中，Z个密封区域的每个密封区域可以用于密封一个以上的第一搁架41，也可以用于密封任一第一搁架41内的一层以上的承载盘2。
举例来说，假设缓冲腔4内设有四个第一搁架41，每个第一搁架41设有八层，其中两个第一搁架41用于放置待处理的基片21，另外两个第一搁架41用于放置处理后的基片21。此时可以使得第一密封门和第二密封门分别设置八个密封区域，每个密封区域单独密封一个第一搁架41中的四层。这样，在机械手向其中一个第一搁架41取放件时，该工件对应的密封区域打开，操作完成后该密封区域关闭。由此，可使得其他的密封区域不受影响，保证了基片21传输过程的密封性，防止外界污染的进入，保证了外延片的质量。
当然，在实际应用中，所有的密封区域的打开或者关闭均是自动控制的，在确定机械手待进入一个密封区域时，可控制该密封区域打开。
应当理解，上述密封区域的设置可以根据实际需要进行设计，当然，上述实现密封的方式仅为举例说明，只要能够实现基片21在各个腔室之间进行传输时的密封的实现方式均可，本实施例对其并不进行限定。
在具体使用过程中，上述的基片传输系统还包括传输腔9，第二机械手8设置在传输腔9内，传输腔9为密封腔体，缓冲腔4、反应腔7和装载腔5分别绕传输腔9设置，缓冲腔4、反应腔7和装载腔5构成密封的传输腔9。将传输腔9也设置成密封腔体，其目的也是实现基片21传输时的密封性。
进一步地，上述的基片传输系统还包括装片腔10和晶片盒组11，第一机械手6设置在装片腔10内，装片腔10为密封腔体，缓冲腔4和晶片盒组11分别绕装片腔10设置，缓冲腔4和晶片盒组11构成密封的装片腔10。将装片腔10也设置成密封腔体，其目的也是实现基片21传输时的密封性。
具体地，在实际应用中，晶片盒组11包括第一晶片盒组和第二晶片 盒组，分别用于放置待处理的基片21以及处理后的基片21。第一机械手6主要负责将第一晶片盒组内待处理的基片21传输到缓冲腔4内的承载盘2上，或者将缓冲腔4内承载盘2上处理后的基片21传输到第二晶片盒组中。第二机械手8主要负责将承载盘2在缓冲腔4和装载腔5之间以及装载腔5和反应腔7之间进行传输。
在具体使用过程中，晶片盒组11均工作在大气环境下，装片腔5、缓冲腔4、传输腔9、装载腔10和反应腔7的腔室中对真空度的要求由低到高，各个腔室可以分别连接有一个真空泵并自动控制，用于分别保证各腔室内的真空度要求。应当理解，图7中示出的系统中各个腔的布局和架构仅为示例性的而非限定性的，至于反应腔7的个数和各个搁架的层数及其布局都是可以根据具体设计需要进行适应性调整，本实施例对其并不进行限定。
为便于第一机械手6和第二机械手8更方便抓取搁架中位于不同层数的工件，一般将第一机械手6和第二机械手8设计成能够上下移动的形式，可以采用现有的任一种结构实现其上下移动，这样仅通过调整机械手的高度就能实现搁架中位于各个层的工件，简单方便。此外，根据晶片盒组11的数量，还可以将第一机械手6设计成既能够上下移动，也可以沿水平移动的形式，以方便第一机械手6可以取放晶片盒组11中各个位置处的基片21。
为提高传输速度，加快生产节拍，第一机械手6和第二机械手8可以均采用双臂机械手，机械手的双臂可以同时完成同一个动作，也可以分别完成不同的动作，以提高传输效率。当然，根据实际生产节拍的要求第一机械手6和第二机械手8也可以设计成其他的形式，本实施例对其不进行限定。
上述的结构均具有实用性。以上，仅是本发明的较佳实施例而已，并非是对发明做其它形式的限制，任何熟悉本专业的技术人员可能利用上述揭示的技术内容加以变更或改型为等同变化的等效实施例。但是凡 是未脱离本发明技术方案内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与改型，仍属于本发明技术方案的保护范围。

Claims (15)

  1. 一种搁架，包括支架和驱动装置，所述支架包括N个相互平行的支撑柱(1)以及两个连接板；
    所述N个相互平行的支撑柱(1)的两端分别通过所述连接板连接，组成具有N边形截面的容置空间，所述N为大于等于3的正整数；
    所述支架还包括至少一组支撑结构，每组所述支撑结构用于承载一个盘状物；
    所述驱动装置与所述连接板传动连接，所述驱动装置用于驱动所述支架转动。
  2. 如权利要求1所述的搁架，所述驱动装置设在所述支架的外部，且所述驱动装置的输出端的末端与至少一个所述连接板连接。
  3. 如权利要求1所述的搁架，每一组所述支撑结构包括分别设置在N个支撑柱(1)上相同水平位置的N个支撑块(13)，所述支撑块(13)用于定位所述盘状物，所述每一组支撑结构中包括的N个支撑块(13)的开口方向相对。
  4. 如权利要求3所述的搁架，所述支撑块(13)上远离所述支撑柱(1)的区域设置有阶梯状的定位槽(12)，每一组所述支撑结构的N个所述支撑块(13)的定位槽(12)所围成的面积与所述盘状物的面积相等。
  5. 如权利要求1-4任一项所述的搁架，所述搁架还包括至少一个用于对所述盘状物进行预热的加热装置(53)。
  6. 如权利要求1-4任一项所述的搁架，所述搁架还包括至少一个用于对所述盘状物进行冷却的冷却装置(55)。
  7. 一种承载盘，所述承载盘为如权利要求1-4任一项所述的搁架中的盘状物，所述承载盘(2)上设有围绕所述搁架的容置空间的中心轴线布置的多个工件位，每个所述工件位用于承载一个基片(21)。
  8. 一种托盘，所述托盘为如权利要求1-6任一项所述的搁架中的盘状物，所述托盘(3)上设有围绕所述搁架的容置空间的中心轴线布置的 多个工件位，每个所述工件位用于承载一个承载盘(2)。
  9. 一种缓冲腔，包括多个如权利要求1-4任一项所述的第一搁架(41)。
  10. 一种装载腔，包括预热腔(52)和冷却腔(54)，所述预热腔(52)包括如权利要求5所述的第二搁架(51)，所述冷却腔(54)包括如权利要求6所述的第二搁架(51)。
  11. 一种基片传输系统，包括：缓冲腔(4)、装载腔(5)、第一机械手(6)和第二机械手(8)；
    缓冲腔(4)，如权利要求9所述，所述缓冲腔(4)中包括的每个第一搁架(41)还用于承放多个如权利要求7所述的承载盘(2)；
    第一机械手(6)，用于将多个基片(21)装载在所述第一搁架(41)的每个所述承载盘(2)上；
    第二机械手(8)，用于将多个所述承载盘(2)从所述第一搁架(41)上取出并装载在所述第二搁架(51)的所述托盘(3)上；
    装载腔(5)，如权利要求10所述，所述装载腔(5)中包括的多个第二搁架(51)用于承放多个如权利要求8所述的托盘(3)。
  12. 如权利要求11所述的基片传输系统，所述基片传输系统还包括反应腔(7)；
    所述反应腔(7)包括第三搁架(71)，所述第三搁架(71)用于承载一个托盘(3)，所述第三搁架(71)为如权利要求1-4任一项所述的搁架；
    所述装载腔(5)的预热腔(52)中第二搁架(51)的层数大于或等于所述反应腔(7)中第三搁架(71)的个数，所述装载腔(5)的冷却腔(54)中第二搁架(51)的层数大于所述反应腔(7)中第三搁架(71)的个数。
  13. 如权利要求12所述的基片传输系统，
    所述缓冲腔(4)为密封腔体，所述缓冲腔(4)还包括第一密封门和第二密封门，所述第一密封门在所述第一机械手(6)向所述缓冲腔(4) 取放件时开启，所述第二密封门在所述第二机械手(8)向所述缓冲腔(4)取放件时开启。
  14. 如权利要求13所述的基片传输系统，
    所述第一密封门和所述第二密封门分别包括Z个密封区域，所述Z个密封区域中的每个密封区域单独开启，或所述Z个密封区域中的W个密封区域同时开启，所述Z为大于等于2的正整数，所述W为大于等于1小于等于Z的正整数。
  15. 如权利要求14所述的基片传输系统，所述基片传输系统还包括传输腔(9)；
    所述第二机械手(8)设置在所述传输腔(9)内，所述传输腔(9)为密封腔体，所述缓冲腔(4)、反应腔(7)和所述装载腔(5)分别绕所述传输腔(9)设置，所述缓冲腔(4)、反应腔(7)和所述装载腔(5)构成密封的传输腔(9)。
PCT/CN2018/118511 2018-09-26 2018-11-30 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统 WO2020062541A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811123065.XA CN110952079A (zh) 2018-09-26 2018-09-26 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统
CN201811123065.X 2018-09-26

Publications (1)

Publication Number Publication Date
WO2020062541A1 true WO2020062541A1 (zh) 2020-04-02

Family

ID=69949193

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/118511 WO2020062541A1 (zh) 2018-09-26 2018-11-30 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统

Country Status (2)

Country Link
CN (1) CN110952079A (zh)
WO (1) WO2020062541A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111471965A (zh) * 2020-04-30 2020-07-31 苏州迈正科技有限公司 传送载板、真空镀膜设备及真空镀膜方法
CN114763606A (zh) * 2021-01-14 2022-07-19 营口金辰机械股份有限公司 一种等离子体增强化学气相沉积设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8028978B2 (en) * 1996-07-15 2011-10-04 Semitool, Inc. Wafer handling system
CN102212877A (zh) * 2010-07-09 2011-10-12 江苏中晟半导体设备有限公司 具有多个外延反应腔的mocvd系统及其操作方法
TW201305030A (zh) * 2011-06-15 2013-02-01 Entegris Inc 太陽能電池製程載具
CN104167377A (zh) * 2013-05-20 2014-11-26 北京北方微电子基地设备工艺研究中心有限责任公司 托盘冷却装置、方法、装载腔和半导体设备
CN106558520A (zh) * 2015-09-29 2017-04-05 北京北方微电子基地设备工艺研究中心有限责任公司 晶片传输系统及晶片传输方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8028978B2 (en) * 1996-07-15 2011-10-04 Semitool, Inc. Wafer handling system
CN102212877A (zh) * 2010-07-09 2011-10-12 江苏中晟半导体设备有限公司 具有多个外延反应腔的mocvd系统及其操作方法
TW201305030A (zh) * 2011-06-15 2013-02-01 Entegris Inc 太陽能電池製程載具
CN104167377A (zh) * 2013-05-20 2014-11-26 北京北方微电子基地设备工艺研究中心有限责任公司 托盘冷却装置、方法、装载腔和半导体设备
CN106558520A (zh) * 2015-09-29 2017-04-05 北京北方微电子基地设备工艺研究中心有限责任公司 晶片传输系统及晶片传输方法

Also Published As

Publication number Publication date
CN110952079A (zh) 2020-04-03

Similar Documents

Publication Publication Date Title
JP6480488B2 (ja) 基板搬送方法
EP1166180B1 (en) Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
US9443749B2 (en) Vacuum processing apparatus
KR102105070B1 (ko) Ald 반응기 내에서의 기판 로딩
KR20010032641A (ko) 기판이송장치 및 방법
JP2000306978A (ja) 基板処理装置、基板搬送装置、および基板処理方法
CN102212877B (zh) 具有多个外延反应腔的mocvd系统及其操作方法
US10998209B2 (en) Substrate processing platforms including multiple processing chambers
TWI829337B (zh) 用於工件處理之系統與方法
WO2010008929A1 (en) Work-piece transfer systems and methods
WO2020062541A1 (zh) 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统
US11600503B2 (en) High-throughput, multi-chamber substrate processing system
WO2018016257A1 (ja) 基板処理装置
KR102058985B1 (ko) 로드 스테이션
TWI721937B (zh) 鈷基板之處理系統、裝置、及方法
TW201504017A (zh) 多基板之快速交換的系統與方法
KR102033694B1 (ko) 기판 처리 시스템
TWI731285B (zh) 等離子處理系統及等離子處理系統的執行方法
CN209243170U (zh) 搁架、承载盘、托盘、缓冲腔、装载腔及基片传输系统
TW202143363A (zh) 半導體處理系統
JP4383636B2 (ja) 半導体製造装置および半導体装置の製造方法
JP2020145329A (ja) 基板収容装置
TW201335973A (zh) 真空沉積系統
JP2019071425A (ja) Ａｌｄ反応炉における基板の装填
TW201944511A (zh) 具有自動傳送系統的磊晶製程系統和其自動傳送方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18935924

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18935924

Country of ref document: EP

Kind code of ref document: A1