WO2020062421A1 - 光罩和曝光系统 - Google Patents

光罩和曝光系统 Download PDF

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Publication number
WO2020062421A1
WO2020062421A1 PCT/CN2018/113301 CN2018113301W WO2020062421A1 WO 2020062421 A1 WO2020062421 A1 WO 2020062421A1 CN 2018113301 W CN2018113301 W CN 2018113301W WO 2020062421 A1 WO2020062421 A1 WO 2020062421A1
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WO
WIPO (PCT)
Prior art keywords
light
area
shielding
photomask
completely
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Application number
PCT/CN2018/113301
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English (en)
French (fr)
Inventor
李泽尧
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Application filed by 惠科股份有限公司, 重庆惠科金渝光电科技有限公司 filed Critical 惠科股份有限公司
Priority to US16/282,331 priority Critical patent/US11137676B2/en
Publication of WO2020062421A1 publication Critical patent/WO2020062421A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present application relates to the field of liquid crystal display technology, and in particular, to a photomask and an exposure system using the photomask.
  • the liquid crystal panel of a liquid crystal display includes an array substrate (Thin Film Transistor), liquid crystal layer, and color filter (Color Filter).
  • a plurality of spacers are provided between the color filter and the array substrate to support the thickness of the liquid crystal cell. Further, in order to ensure that the liquid crystal cell has a sufficiently large liquid crystal redundancy to resist the influence of temperature and pressure changes on the liquid crystal cell, in the design of the liquid crystal panel, a part of several spacers will be set as the main spacer. 2. The other part will be set as the auxiliary septum, and a sufficient step difference must be ensured between the main septum and the auxiliary septum.
  • the free end surface of the spacer that is, the end surface of the spacer for holding the array substrate is not flat, but is in the form of a spherical surface.
  • the spacers that actually work will be much smaller than the design value, so that the cell thickness of the liquid crystal cell is abnormal and the display quality is affected.
  • the main purpose of the present application is to provide a photomask, which aims to improve the flatness of the free end surface of the spacer, improve the stability of the spacer and the array substrate, thereby avoiding abnormal cell thickness of the liquid crystal cell and improving the liquid crystal panel. Display quality.
  • the photomask provided in this application includes a completely light-transmitting area and a completely light-shielding area surrounding the periphery of the completely light-transmitting area.
  • a light-shielding area is defined in the completely light-transmitting area to define the light-shielding area.
  • the light transmittance is T, 0 ⁇ T ⁇ 100%.
  • an outer contour shape of the light-shielding region is the same as an outer contour shape of the completely light-transmitting region.
  • the center of the light-shielding area and the center of the completely light-transmitting area are overlapped with each other.
  • the minimum distance between the outer contour of the light-shielding region and the outer contour of the fully transparent region is 2 ⁇ m to 10 ⁇ m.
  • the light-shielding region includes a plurality of sub-light-shielding regions, and the plurality of sub-light-shielding regions are spaced apart from each other, and the light transmittance of each of the sub-light-shielding regions is greater than or equal to 0 and less than 100%.
  • a center of one of the sub-light-shielding regions is overlapped with a center of the completely light-transmitting region, and the remaining sub-light-shielding regions follow the outer contour surrounding direction of the completely light-transmitting region.
  • a ratio of an area of the light-shielding area to an area of the completely light-transmitting area is 10% to 60%.
  • the light transmittance of the light shielding area is 0-60%.
  • the light shielding area is a resin material.
  • the present application also proposes an exposure system, which includes an exposure machine and a photomask.
  • the photomask includes a completely transparent area and a completely light-shielding area surrounding the periphery of the completely transparent area.
  • a light-shielding area is provided, and the light transmittance of the light-shielding area is defined as T, 0 ⁇ T ⁇ 100%, and the photomask is set at the light exit of the exposure machine.
  • an outer contour shape of the light-shielding region is the same as an outer contour shape of the completely light-transmitting region.
  • the center of the light-shielding area and the center of the completely light-transmitting area are overlapped with each other.
  • the minimum distance between the outer contour of the light-shielding region and the outer contour of the fully transparent region is 2 ⁇ m to 10 ⁇ m.
  • the light-shielding area includes a plurality of sub-light-shielding areas, and the plurality of sub-light-shielding areas are spaced apart from each other, and the light transmittance of each of the light-shielding areas is greater than or equal to 0 and less than 100%.
  • a center of one of the sub-light-shielding regions is overlapped with a center of the completely light-transmitting region, and the remaining sub-light-shielding regions follow the outer contour surrounding direction of the completely light-transmitting region.
  • a ratio of an area of the light-shielding area to an area of the completely light-transmitting area is 10% to 60%.
  • the light transmittance of the light shielding area is 0-60%.
  • the light shielding area is a resin material.
  • the photomask of the present application is applied to a photolithography process in a liquid crystal panel manufacturing process, since a light-transmitting area or a light-transmitting light-shielding area was originally added to a completely light-transmitting area originally used for exposure to form a spacer, this During the exposure process, the boundary between the areas with different light intensity in the photoresist material under the photomask can be increased from the original one to the current two, that is, the area defined by the outer boundary has different exposure levels. Two areas-the outer area and the middle area.
  • the degree of bonding of molecules in the photoresist material in the intermediate region is lower than that in the peripheral region, which can make the free end of the photoresist material in the intermediate region more than the periphery during development.
  • the area is etched more, which effectively reduces the spherical surface of the free end of the spacer, improves the flatness of the free end surface of the spacer, improves the stability of the spacer and the array substrate, and avoids the box of the liquid crystal cell.
  • the abnormal thickness improves the display quality of the LCD panel.
  • the actual ratio of the main and auxiliary septa will also match the design value, thereby further avoiding the abnormal thickness of the liquid crystal cell and improving the display quality of the liquid crystal panel.
  • FIG. 1 is a schematic structural diagram of an embodiment of a photomask of the present application
  • FIG. 2 is a schematic structural diagram of another embodiment of a photomask of the present application.
  • FIG. 3 is a schematic structural diagram of another embodiment of a photomask of the present application.
  • fixed may be a fixed connection, a detachable connection, or a whole; It is a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium. It can be the internal connection of two elements or the interaction relationship between two elements, unless it is clearly defined otherwise.
  • fixed may be a fixed connection, a detachable connection, or a whole; It is a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium. It can be the internal connection of two elements or the interaction relationship between two elements, unless it is clearly defined otherwise.
  • the present application proposes a photomask 100, which is applied to the manufacturing process of a liquid crystal panel, and aims to improve the flatness of the free end surface of the spacer and improve the stability of the spacer against the array substrate, thereby avoiding the box of the liquid crystal cell.
  • the thickness is abnormal, which improves the display quality of the LCD panel.
  • the photomask 100 includes a completely transparent region 10 and a completely light-shielding region 30 surrounding the periphery of the completely transparent region 10.
  • a light-shielding region 50 is provided in the region 10, and the light transmittance of the light-shielding region 50 is defined as T, 0 ⁇ T ⁇ 100%.
  • the completely transparent area 10 is rectangular, and its light transmittance is 100%, and the light emitted by the exposure machine can completely penetrate this area.
  • the complete light-shielding area 30 is arranged in a ring shape, and its outer contour is also arranged in a rectangular shape.
  • the completely light-shielding area 30 surrounds the periphery of the completely light-transmitting area 10, and its light transmittance is 0, and the light emitted by the exposure machine cannot penetrate this area at all.
  • the degree of bonding of molecules in the photoresist material in the intermediate region is lower than that in the peripheral region, which can make the free end of the photoresist material in the intermediate region more than the periphery during development.
  • the area is etched more, which effectively reduces the spherical surface of the free end of the spacer, improves the flatness of the free end surface of the spacer, improves the stability of the spacer and the array substrate, and avoids the box of the liquid crystal cell.
  • the abnormal thickness improves the display quality of the LCD panel.
  • the actual ratio of the main and auxiliary septa will also match the design value, thereby further avoiding the abnormal thickness of the liquid crystal cell and improving the display quality of the liquid crystal panel.
  • an outer contour shape of the light-shielding region 50 is the same as an outer contour shape of the completely light-transmitting region 10.
  • the outer contour of the light-shielding region 50 and the outer contour of the fully-light-transmitting region 10 are both rectangular, and each side of the outer contour of the light-shielding region 50 is parallel to the corresponding side of the outer contour of the fully-light-transmitting region 10. .
  • the uniformity of the width of the annular fully transmissive area can be improved, so that the photoresist material under the light-shielding area 50 can be located as much as possible in the middle of the free end of the spacer after exposure and development, thereby effectively reducing the spacer.
  • the top of the free end spherical surface improves the flatness of the free end surface of the septum.
  • the center of the light-shielding region 50 and the center of the completely light-transmitting region 10 are overlapped with each other.
  • intersection points of the two diagonal lines of the rectangular light-shielding area 50 and the intersection points of the two diagonal lines of the rectangular completely light-transmitting area 10 are overlapped with each other.
  • the centers of the two circles coincide.
  • the uniformity of the width of the annular fully transmissive area can be further improved, thereby further ensuring that the photoresist material under the light shielding area 50 is located in the middle of the free end of the septum after exposure and development, and the free end of the septum is improved.
  • the weakening effect of the spherical top further improves the flatness of the free end surface of the septum.
  • the outer contour of the light shielding area 50 and the The minimum distance between the outer contours of the fully transparent area 10 is 2 ⁇ m to 10 ⁇ m.
  • the light-shielding region 50 includes a plurality of sub-light-shielding regions 51, and the plurality of sub-light-shielding regions 51 are spaced apart.
  • the transmittances are all greater than or equal to 0 and less than 100%.
  • the sub-shading area 51 when the light transmittance of the sub-shading area 51 is greater than 0 and less than 100%, the sub-shading area 51 is an area that can partially pass through the light emitted by the exposure machine. At this time, part of the light emitted from the exposure machine can pass through Penetrating area 51.
  • the sub-shading area 51 is an area that can completely block the light emitted by the exposure machine. At this time, the light emitted by the exposure machine cannot penetrate the sub-shading area 51 at all.
  • each sub-shading area 51 can make each sub-shading area 51 dispersed within the fully transparent area 10, so that the weakly exposed areas under each sub-shading area 51 can be dispersed, so that the spherical surface of the free end of the spacer exists Several reduced areas, which can effectively improve the weakening effect on the spherical surface, and improve the flatness of the free end surface of the spacer.
  • the uniformity of dispersion of each reduced area on the spherical surface of the free end of the spacer is improved, and the spherical surface is protected.
  • the top is effectively reduced.
  • the center of one of the sub-light-shielding regions 51 is overlapped with the center of the fully-light-transmitting region 10, and the remaining sub-light-shielding regions 51 are along the fully-light-transmitting region.
  • the outer contours of 10 are set at intervals.
  • the ratio of the area of the light shielding area 50 to the area of the completely transparent area 10 is 10% ⁇ 60%. Specifically, if the area ratio is too small, the reduction effect of the light-shielding area 50 on the free end spherical surface of the septum will be significantly reduced, resulting in a low flatness of the free end of the septum; if the area ratio is too large, it will cause the septum The middle of the free end of the object is too large, and the flatness is also not high. It also causes the strength of the septum to decrease significantly.
  • the ratio of the total area of the plurality of sub-light-shielding regions 51 to the area of the fully transparent region 10 is 10% to 60%.
  • the light transmittance of the light shielding area 50 is 0-60%. In this way, the reduction effect of the free end spherical surface of the spacer by the shading area 50 can be effectively guaranteed, and the flatness of the free end surface of the spacer can be ensured. Specifically, if the light transmittance is too large, the spherical surface of the free end of the spacer is still obvious, and the flatness is not high.
  • the light shielding region 50 is a resin material.
  • the resin material can effectively adjust its own light transmittance by adding some reflective materials or light absorbing materials, which is simple, convenient and effective.
  • the resin material can make coating more convenient, thereby effectively reducing the manufacturing difficulty of the photomask 100, improving the manufacturing efficiency, and improving the reliability of the photomask 100 of the present application.
  • the light transmittance is a physical quantity used to characterize the ability of light to pass through the medium, and is the percentage of the luminous flux transmitted through a transparent or translucent body to the incident luminous flux.
  • the same material as the black matrix that is, the light-shielding layer—the BM layer
  • the BM layer the same material as the black matrix
  • the light transmittance of the light shielding area 50 is designed to be greater than 0 and less than 100, a resin material, a glass material, or a plastic material may be selected to make the light shielding area 50.
  • the exposure system includes an exposure machine and the photomask 100 described above.
  • the specific structure of the photomask 100 refer to the above embodiments. Since this exposure system uses all the technical solutions of all the above embodiments Therefore, it has at least all the effects brought by all the technical solutions of all the embodiments described above, which will not be repeated one by one here.
  • the photomask 100 is disposed at a light exit of the exposure machine.
  • the photomask 100 is detachably connected to the exposure machine to realize replacement of different photomasks 100.
  • the reticle 100 may be detachably connected to the exposure machine by using a screw connection, a snap connection, or the like.
  • step S1 a substrate is provided, and a negative photoresist layer is coated on the substrate.
  • the area irradiated by light will not be removed by the developer, and the area not irradiated by light will be removed by the developer;
  • the areas where the exposure level is low are removed by the developer more than the areas where the exposure level is high are removed by the developer.
  • Step S2 providing a photomask 100 according to the present application.
  • the photomask 100 includes a fully transparent area 10 and a fully light-shielding area 30 surrounding the fully transparent area 10, and the fully transparent area 10 is provided therein.
  • the light-shielding area 50 defines the light transmittance of the light-shielding area 50 as T, 0 ⁇ T ⁇ 100%;
  • step S3 the photoresist 100 is used to expose the negative photoresist layer using the ultraviolet light as a light source.
  • Step S4 developing the negative photoresist layer after exposure.
  • the negative photoresist layer exposed by the completely light-transmitting area 10 since the negative photoresist layer exposed by the completely light-transmitting area 10 has undergone sufficient crosslinking reaction, it will maintain a certain film thickness after development; the negative photoresist layer blocked by the light-shielding area 50 is not After sufficient cross-linking reaction occurs, the film thickness will be reduced after development, thereby effectively preventing the free end of the septum from forming a spherical surface, which is equivalent to making the spherical surface of the free end of the original septum cross-cut, that is, the current formation
  • the flatness of the free end of the septum is significantly improved.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)

Abstract

一种光罩（100）和曝光系统，光罩（100）包括完全透光区（10）和围设于完全透光区（10）外围的完全遮光区（30），完全透光区（10）内设有遮光区（50），定义遮光区（50）的光穿透率为T，0≤T＜100％。

Description

光罩和曝光系统
技术领域
本申请涉及液晶显示技术领域，特别涉及一种光罩和应用该光罩的曝光系统。
背景技术
液晶显示器（Liquid Crystal Display）的液晶面板包括阵列基板（Thin Film Transistor）、液晶层、以及彩色滤光片（Color Filter），彩色滤光片与阵列基板之间还设置有若干起支撑作用的隔垫物，用以保证液晶盒的盒厚。进一步地，为了确保液晶盒具有足够大的液晶冗余，以抵御温度变化和压力变化对液晶盒的影响，在液晶面板设计时，若干隔垫物中的一部分将会被设置成为主隔垫物、另一部分将会被设置成为辅隔垫物，并且，主隔垫物与辅隔垫物之间还需保证足够的段差。但是，在实际的隔垫物制程中，隔垫物的自由端面，即隔垫物的用于抵持阵列基板的端面并不是平整的，而是呈球面形式。此时，由于球面滑动的影响，实际起作用的隔垫物将远远小于设计值，从而使得液晶盒的盒厚异常，影响显示品质。
申请内容
本申请的主要目的是提供一种光罩，旨在提升隔垫物的自由端面的平整度，提升隔垫物与阵列基板抵持的稳定性，从而避免液晶盒的盒厚异常，提升液晶面板的显示品质。
为实现上述目的，本申请提出的光罩，包括完全透光区和围设于所述完全透光区外围的完全遮光区，所述完全透光区内设有遮光区，定义所述遮光区的光穿透率为T，0≤T＜100%。
可选地，所述遮光区的外轮廓形状与所述完全透光区的外轮廓形状相同。
可选地，所述遮光区的中心与所述完全透光区的中心重合设置。
可选地，所述遮光区的外轮廓与所述完全透光区的外轮廓之间的最小距离为2μm~10μm。
可选地，所述遮光区包括若干子遮光区，若干所述子遮光区间隔分布，每一所述子遮光区的光穿透率均大于等于0、小于100%。
可选地，若干所述子遮光区中，一所述子遮光区的中心与所述完全透光区的中心重合设置，其余所述子遮光区沿所述完全透光区的外轮廓环绕方向间隔设置。
可选地，所述遮光区的面积与所述完全透光区的面积之比为10%~60%。
可选地，所述遮光区的光穿透率为0~60%。
可选地，所述遮光区为树脂材料。
本申请还提出一种曝光系统，该曝光系统包括曝光机和光罩，所述光罩包括完全透光区和围设于所述完全透光区外围的完全遮光区，所述完全透光区内设有遮光区，定义所述遮光区的光穿透率为T，0≤T＜100%，所述光罩设于所述曝光机的出光口处。
可选地，所述遮光区的外轮廓形状与所述完全透光区的外轮廓形状相同。
可选地，所述遮光区的中心与所述完全透光区的中心重合设置。
可选地，所述遮光区的外轮廓与所述完全透光区的外轮廓之间的最小距离为2μm~10μm。
可选地，所述遮光区包括若干子遮光区，若干所述子遮光区间隔分布，每一所述子遮光区的光穿透率均大于等于0、小于100%。
可选地，若干所述子遮光区中，一所述子遮光区的中心与所述完全透光区的中心重合设置，其余所述子遮光区沿所述完全透光区的外轮廓环绕方向间隔设置。
可选地，所述遮光区的面积与所述完全透光区的面积之比为10%~60%。
可选地，所述遮光区的光穿透率为0~60%。
可选地，所述遮光区为树脂材料。
当将本申请的光罩应用到液晶面板制程中的光刻工艺流程时，由于原本用于曝光形成隔垫物的完全透光区内增加了不透光或不完全透光的遮光区，这可使得曝光过程中光罩之下的光阻材料中照光强度不同的区域之间的界限由原本的一条增加为现在的两条，也即位于外侧的界限所限定的区域内存在曝光程度不同的两个区域——外围区域和中间区域。此时，由于中间区域的曝光程度弱于外围区域的曝光程度，中间区域的光阻材料中分子的联结程度低于外围区域，这可使得显影过程中中间区域的光阻材料的自由端较外围区域刻蚀更多，也即有效削减了隔垫物自由端的球面，提升了隔垫物的自由端面的平整度，提升了隔垫物与阵列基板抵持的稳定性，避免了液晶盒的盒厚异常，提升了液晶面板的显示品质。
并且，针对隔垫物所对应的阵列基板存在凹陷的情况，当液晶面板受到外部压力时，由于隔垫物的自由端面的平整度、以及隔垫物与阵列基板的抵持稳定性的提升，实际起到作用的主、辅隔垫物比例也将与设计值相符，从而进一步避免了液晶盒的盒厚异常，提升了液晶面板的显示品质。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请光罩一实施例的结构示意图；
图2为本申请光罩另一实施例的结构示意图；
图3为本申请光罩又一实施例的结构示意图。
附图标号说明：
标号 名称 标号 名称
100 光罩 50 遮光区
10 完全透光区 51 子遮光区
30 完全遮光区
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，本申请实施例中所有方向性指示（诸如上、下、左、右、前、后……）仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本申请中如涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“连接”、“固定”等应做广义理解，例如，“固定”可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
另外，本申请各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
本申请提出一种光罩100，其应用于液晶面板的制造过程，旨在提升隔垫物的自由端面的平整度，提升隔垫物与阵列基板抵持的稳定性，从而避免液晶盒的盒厚异常，提升液晶面板的显示品质。
以下将就光罩100的具体结构进行描述。
如图1所示，在本申请光罩100一实施例中，该光罩100包括完全透光区10和围设于所述完全透光区10外围的完全遮光区30，所述完全透光区10内设有遮光区50，定义所述遮光区50的光穿透率为T，0≤T＜100%。
本实施例中，完全透光区10呈长方形设置，其光穿透率为100%，曝光机的出射光线可完全穿透该区域。完全遮光区30呈环圈状设置，其外轮廓亦呈长方形设置。完全遮光区30环绕于完全透光区10的四周，其光穿透率为0，曝光机的出射光线完全不可穿透该区域。
进一步地，设于完全透光区10内的遮光区50也呈长方形设置，并且，其光穿透率为T，0≤T＜100%。可以理解的，当0＜T＜100%时，遮光区50为可部分透过曝光机出射光线的区域，此时，曝光机的出射光线中部分可穿透该区域。当T=0时，遮光区50则为可完全遮挡曝光机出射光线的区域，此时，曝光机的出射光线完全不可穿透该区域。
这样，当将上述光罩100应用到液晶面板制程中的光刻工艺流程时，由于原本用于曝光形成隔垫物的完全透光区10内增加了不透光或不完全透光的遮光区50，这可使得曝光过程中光罩100之下的光阻材料中照光强度不同的区域之间的界限由原本的一条增加为现在的两条，也即位于外侧的界限所限定的区域内存在曝光程度不同的两个区域——外围区域和中间区域。此时，由于中间区域的曝光程度弱于外围区域的曝光程度，中间区域的光阻材料中分子的联结程度低于外围区域，这可使得显影过程中中间区域的光阻材料的自由端较外围区域刻蚀更多，也即有效削减了隔垫物自由端的球面，提升了隔垫物的自由端面的平整度，提升了隔垫物与阵列基板抵持的稳定性，避免了液晶盒的盒厚异常，提升了液晶面板的显示品质。
并且，针对隔垫物所对应的阵列基板存在凹陷的情况，当液晶面板受到外部压力时，由于隔垫物的自由端面的平整度、以及隔垫物与阵列基板的抵持稳定性的提升，实际起到作用的主、辅隔垫物比例也将与设计值相符，从而进一步避免了液晶盒的盒厚异常，提升了液晶面板的显示品质。
如图1所示，在本申请光罩100一实施例中，所述遮光区50的外轮廓形状与所述完全透光区10的外轮廓形状相同。
本实施例中，遮光区50的外轮廓和完全透光区10的外轮廓均呈长方形设置，并且，遮光区50外轮廓的每一条边均与完全透光区10外轮廓的对应边平行设置。
如此，可提升环形的可完全透光的区域宽度的一致性，从而使得遮光区50之下的光阻材料在曝光显影后能够尽可能地位于隔垫物自由端的中部，进而有效削减隔垫物自由端的球面的顶部，提升隔垫物的自由端面的平整度。
如图1所示，在本申请光罩100一实施例中，所述遮光区50的中心与所述完全透光区10的中心重合设置。
本实施例中，长方形遮光区50的两条对角线的交点与长方形完全透光区10的两条对角线的交点重合设置。当然，当遮光区50和完全透光区10均为圆形时，则两圆心重合设置。
如此，可使得环形的可完全透光的区域宽度的一致性进一步提升，从而进一步保障遮光区50之下的光阻材料在曝光显影后位于隔垫物自由端的中部，提升对隔垫物自由端的球面顶部的削弱效果，进而使得隔垫物的自由端面的平整度进一步提升。
在本申请光罩100一实施例中，为了进一步提升遮光区50对隔垫物自由端的球面顶部的削弱效果，提升隔垫物的自由端面的平整度，所述遮光区50的外轮廓与所述完全透光区10的外轮廓之间的最小距离为2μm~10μm。
如图2所示，在本申请光罩100一实施例中，所述遮光区50包括若干子遮光区51，若干所述子遮光区51间隔分布，每一所述子遮光区51的光穿透率均大于等于0、小于100%。
可以理解的，当子遮光区51的光穿透率大于0、小于100%时，子遮光区51为可部分透过曝光机出射光线的区域，此时，曝光机的出射光线中部分可穿透子遮光区51。当子遮光区51的光穿透率等于0时，子遮光区51则为可完全遮挡曝光机出射光线的区域，此时，曝光机的出射光线完全不可穿透子遮光区51。
若干子遮光区51的设计，可使得各个子遮光区51于完全透光区10内得以分散，使得各个子遮光区51之下的弱曝光区域得以分散，从而使得隔垫物自由端的球面上存在若干个被削减的区域，进而有效提升对球面的削弱效果，提升隔垫物的自由端面的平整度。
如图3所示，在本申请光罩100一实施例中，为了进一步提升各个弱曝光区域分散的均匀性，提升隔垫物自由端的球面上各个被削减区域分散的均匀性，并保障球面的顶部得以有效削减，若干所述子遮光区51中，一所述子遮光区51的中心与所述完全透光区10的中心重合设置，其余所述子遮光区51沿所述完全透光区10的外轮廓环绕方向间隔设置。
在本申请光罩100一实施例中，为了保障遮光区50对隔垫物自由端球面的削减效果，所述遮光区50的面积与所述完全透光区10的面积之比为10%~60%。具体地，若面积之比过小，遮光区50对隔垫物自由端球面的削减效果将明显下降，导致隔垫物自由端的平整度不高；若面积之比过大，则会造成隔垫物自由端中部凹陷过大，平整度同样不高，还会导致隔垫物自身强度下降明显。当然，可以理解的，若遮光区50由若干子遮光区51构成，则若干子遮光区51的总面积与完全透光区10的面积之比为10%~60%。
在本申请光罩100一实施例中，所述遮光区50的光穿透率为0~60%。如此，可有效保障遮光区50对隔垫物自由端球面的削减效果，保障隔垫物的自由端面的平整度。具体地，若光穿透率过大，隔垫物自由端的球面依旧明显，平整度不高。
在本申请光罩100一实施例中，所述遮光区50为树脂材料。此时，树脂材料可通过添加某些反光物质或吸光物质有效调整自身的光穿透率，简单、便捷、且有效。并且，树脂材料可使得涂布更加方便，从而有效降低光罩100的制造难度，提升制造效率，提升本申请光罩100的可靠性。
此外，需要说明的是，透光率是一个用于表征光线透过介质能力的物理量，是透过透明或半透明体的光通量与入射光通量的百分比。
当将遮光区50的透光率设计为0时，则可选择与黑矩阵（即遮光层——BM层）相同的材质制成遮光区50。
当将遮光区50的透光率设计为大于0、小于100时，则可选择树脂材料、玻璃材料、或塑料材料制成遮光区50。
本申请还提出一种曝光系统，该曝光系统包括曝光机和如上所述的光罩100，该光罩100的具体结构参照上述实施例，由于本曝光系统采用了上述所有实施例的全部技术方案，因此至少具有上述所有实施例的全部技术方案所带来的所有效果，在此不再一一赘述。
其中，所述光罩100设于所述曝光机的出光口处。
进一步地，光罩100可拆卸地连接于曝光机，以实现不同光罩100的更换。具体地，光罩100可采用螺钉连接、卡扣连接等方式实现与曝光机的可拆卸连接。
此外，需要说明的是，当将上述光罩100应用到液晶面板制程中的光刻工艺流程时，存在以下步骤：
步骤S1，提供基板，在所述基板上涂布负性光阻层。
所述负性光阻层具有如下特性：
一、被光照射的区域不会被显影液去除，而不被光照射的区域会被显影液去除；
二、根据受到的光照能量的不同而发生不同程度的交联反应；
三、在温度超过玻璃化温度时发生粘性流动；粘性流动是不可逆的变形；
四、曝光程度低的区域被显影液去除的部分比曝光程度高的区域被显影液去除的部分更多。
步骤S2，提供本申请的光罩100，所述光罩100包括完全透光区10和围设于所述完全透光区10外围的完全遮光区30，所述完全透光区10内设有遮光区50，定义所述遮光区50的光穿透率为T，0≤T＜100%；
步骤S3，以紫外光为光源，使用所述光罩100对负性光阻层进行曝光。
步骤S4，对曝光后的负性光阻层进行显影。
具体地，被完全透光区10所曝光的负性光阻层由于发生了足够的交联反应，经显影后将保持一定的膜厚；被遮光区50所遮挡的负性光阻层由于未发生足够的交联反应，经显影后膜厚将降低，从而有效防止了隔垫物的自由端形成球面，即相当于使得原有的隔垫物自由端的球面被横切，也即使得当前形成的隔垫物的自由端的平整度明显提升。
以上所述仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的发明构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (20)

  1. 一种光罩，其中，包括完全透光区和围设于所述完全透光区外围的完全遮光区，所述完全透光区内设有遮光区，定义所述遮光区的光穿透率为T，0≤T＜100%。
  2. 如权利要求1所述的光罩，其中，所述遮光区的外轮廓形状与所述完全透光区的外轮廓形状相同。
  3. 如权利要求2所述的光罩，其中，所述遮光区的中心与所述完全透光区的中心重合设置。
  4. 如权利要求3所述的光罩，其中，所述遮光区的外轮廓与所述完全透光区的外轮廓之间的最小距离为2μm~10μm。
  5. 如权利要求4所述的光罩，其中，所述遮光区的面积与所述完全透光区的面积之比为10%~60%。
  6. 如权利要求1所述的光罩，其中，所述遮光区包括若干子遮光区，若干所述子遮光区间隔分布，每一所述子遮光区的光穿透率均大于等于0、小于100%。
  7. 如权利要求6所述的光罩，其中，若干所述子遮光区中，一所述子遮光区的中心与所述完全透光区的中心重合设置，其余所述子遮光区沿所述完全透光区的外轮廓环绕方向间隔设置。
  8. 如权利要求7所述的光罩，其中，所述遮光区的面积与所述完全透光区的面积之比为10%~60%。
  9. 如权利要求1所述的光罩，其中，所述遮光区的面积与所述完全透光区的面积之比为10%~60%。
  10. 如权利要求1所述的光罩，其中，所述遮光区的光穿透率为0~60%。
  11. 如权利要求1所述的光罩，其中，所述遮光区为树脂材料。
  12. 一种曝光系统，包括曝光机和光罩，所述光罩设于所述曝光机的出光口处，其中，所述光罩包括完全透光区和围设于所述完全透光区外围的完全遮光区，所述完全透光区内设有遮光区，定义所述遮光区的光穿透率为T，0≤T＜100%。
  13. 如权利要求12所述的曝光系统，其中，所述遮光区的外轮廓形状与所述完全透光区的外轮廓形状相同。
  14. 如权利要求13所述的曝光系统，其中，所述遮光区的中心与所述完全透光区的中心重合设置。
  15. 如权利要求14所述的曝光系统，其中，所述遮光区的外轮廓与所述完全透光区的外轮廓之间的最小距离为2μm~10μm。
  16. 如权利要求12所述的曝光系统，其中，所述遮光区包括若干子遮光区，若干所述子遮光区间隔分布，每一所述子遮光区的光穿透率均大于等于0、小于100%。
  17. 如权利要求16所述的曝光系统，其中，若干所述子遮光区中，一所述子遮光区的中心与所述完全透光区的中心重合设置，其余所述子遮光区沿所述完全透光区的外轮廓环绕方向间隔设置。
  18. 如权利要求12所述的曝光系统，其中，所述遮光区的面积与所述完全透光区的面积之比为10%~60%。
  19. 如权利要求12所述的曝光系统，其中，所述遮光区的光穿透率为0~60%。
  20. 如权利要求12所述的曝光系统，其中，所述遮光区为树脂材料。
PCT/CN2018/113301 2018-09-30 2018-11-01 光罩和曝光系统 WO2020062421A1 (zh)

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