WO2024045984A1 - 一种彩膜基板、显示面板及掩膜版 - Google Patents

一种彩膜基板、显示面板及掩膜版 Download PDF

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Publication number
WO2024045984A1
WO2024045984A1 PCT/CN2023/110340 CN2023110340W WO2024045984A1 WO 2024045984 A1 WO2024045984 A1 WO 2024045984A1 CN 2023110340 W CN2023110340 W CN 2023110340W WO 2024045984 A1 WO2024045984 A1 WO 2024045984A1
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WO
WIPO (PCT)
Prior art keywords
top surface
exposure area
color filter
mask
area
Prior art date
Application number
PCT/CN2023/110340
Other languages
English (en)
French (fr)
Inventor
余娅
王永灿
李群
卢彦春
杜瑞芳
施申伟
张然
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2024045984A1 publication Critical patent/WO2024045984A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Definitions

  • the invention belongs to the field of display technology, and in particular relates to a color filter substrate, a display panel and a mask.
  • the TFT-LCD color filter substrate has support pillars located in the non-display area, which are used to support the space between the color filter substrate and the thin film transistor array substrate to provide space for the liquid crystal layer.
  • support pillars located in the non-display area, which are used to support the space between the color filter substrate and the thin film transistor array substrate to provide space for the liquid crystal layer.
  • the strength may be insufficient, so the top surface of the support column is designed to be relatively large.
  • the flatness of the top surface of the support pillar directly affects the contact area between the support pillar and the thin film transistor array substrate, thereby affecting the support effect.
  • the top surface size of the support column needs to be designed to be larger, and the flatness of the surface of the support column is difficult to ensure, and it is especially easy to have a concave area in the middle.
  • a color filter substrate having a display area located in the middle and a non-display area located at the periphery of the display area, which includes:
  • a color photoresist layer is provided on one side of the substrate body and includes a plurality of photoresist units;
  • the support structure is located in the non-display area and includes a plurality of main support pillars and auxiliary support pillars.
  • Each of the main support pillars or auxiliary support pillars is located on a side of a photoresist unit away from the substrate body;
  • the auxiliary support pillars It has a first top surface on one side facing away from the substrate body, and the first top surface has a planar area at least in the middle;
  • the main support column has a second top surface facing away from the substrate body, and the second top surface The distance between the surface and the substrate body is greater than the distance between the first top surface of the auxiliary support column and the substrate body.
  • the ratio between the area of the planar region and the area of the first top surface is 0.9-1.
  • the first top surface size of the auxiliary support pillar is greater than or equal to 16 ⁇ m.
  • the auxiliary support column has a support column body located in the middle and a support ring located on the periphery of the support column body. There is a gap between the support ring and the support column body starting from the first top surface.
  • An isolation groove is recessed with a preset depth; the preset depth is less than the distance between the first top surface and the substrate body.
  • the support ring is a one-layer annular structure or a multi-layer spaced annular structure.
  • the shape of the support ring is adapted to the shape of the support body.
  • the size of the support pillar body located in the first top surface is less than or equal to 16 ⁇ m.
  • the material of the support structure is a negative photosensitive material.
  • the distance between the first top surface of the auxiliary support column and the substrate body is 2.5 ⁇ m-3.5 ⁇ m; and/or,
  • the distance between the second top surface of the main support column and the substrate body is 3.0 ⁇ m-4.0 ⁇ m; and/or,
  • the distance difference between the second top surface and the first top surface and the substrate body is 0.45 ⁇ m-0.55 ⁇ m.
  • a display panel includes a liquid crystal layer, a thin film transistor array substrate and a color filter substrate as described above.
  • the liquid crystal layer is located between the thin film transistor array substrate and the color filter substrate. between the color filter substrates, and the support pillars face the thin film transistor array substrate.
  • a mask for preparing the color filter substrate as described above, including:
  • Mask version body the mask version body is an opaque film structure
  • each exposure unit includes a first exposure area located in the middle and a ring-shaped second exposure area located on the periphery of the first exposure area; the first exposure area and the second exposure area There is an annular first shielding ring between them; wherein, the first exposure area and the second exposure area are semi-transmissive film structures, and the first shielding ring is an opaque film structure.
  • the radial dimension of the first exposed area is less than 30 ⁇ m.
  • the radial size of the first shielding ring is 1 ⁇ m-2 mm; and/or,
  • the radial size of the second exposure area is 1.5 ⁇ m-3 ⁇ m; and/or,
  • the first blocking ring includes one or more spaced blocking ring structures, and the second exposure area is a corresponding one or more spaced annular exposure areas.
  • a mask for preparing the color filter substrate as described above, including:
  • Mask version body the mask version body is an opaque film structure
  • each exposure unit includes a third exposure area and a fourth exposure area located in the middle of the third exposure area; wherein the light transmittance of the fourth exposure area is greater than that of the third exposure area.
  • the third exposure area is a semi-transparent film structure
  • the fourth exposure area is a fully transparent film structure
  • a second blocking ring is provided at the connection between the third exposure area and the fourth exposure area, the second blocking ring partially overlaps with the third exposure area, and/or the The second blocking ring partially overlaps with the fourth exposure area.
  • the radial dimension of the second shielding ring is less than or equal to 0.5 ⁇ m.
  • the fourth exposure area has a radial size of 11 ⁇ m-13 ⁇ m.
  • the middle part of the auxiliary support column of the color filter substrate is a flat area, which is beneficial to improving the flatness of the first top surface, thereby improving the connection between the first top surface and other structures (such as film transistor array substrate).
  • Figure 1 is a partial cross-sectional view of a display panel in the related art
  • Figure 2 is a partial cross-sectional view of a display panel according to an embodiment of the present invention.
  • Figure 3 is a schematic diagram of the first top surface of an auxiliary support column according to an embodiment of the present invention.
  • Figure 4 is a schematic diagram of the first top surface of another auxiliary support column according to an embodiment of the present invention.
  • Figure 5 is a schematic diagram of the first top surface of another auxiliary support column according to an embodiment of the present invention.
  • Figure 6 is a schematic diagram of the first top surface of yet another auxiliary support column according to an embodiment of the present invention.
  • Figure 7 is a schematic diagram of a support structure module according to an embodiment of the present invention.
  • Figure 8 is a schematic diagram of a mask according to an embodiment of the present invention.
  • Figure 9 is a schematic diagram of forming an auxiliary support column based on the mask shown in Figure 8.
  • Figure 10 is a schematic diagram of a set of different masks
  • Figure 11 is a data table of auxiliary support pillars formed according to different masks shown in Figure 10;
  • Figure 12 is a measured schematic diagram of the auxiliary support pillar formed according to the different masks shown in Figure 10;
  • Figure 13 is a schematic diagram of another mask according to an embodiment of the present invention.
  • Figure 14 is a schematic diagram of forming auxiliary support pillars based on the mask shown in Figure 13;
  • Figure 15 is a schematic diagram of another set of different masks
  • Figure 16 is a data table of auxiliary support pillars formed according to different masks shown in Figure 15;
  • Figure 17 is a schematic diagram of actual measurement of auxiliary support pillars formed according to different masks shown in Figure 15.
  • Words such as “connected” or “connected” are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
  • the words “upper” and/or “lower” and similar words are for convenience of explanation only and are not limited to a position or a spatial orientation.
  • the singular forms “a,””the” and “the” are intended to include the plural forms as well, unless the context clearly dictates otherwise. It will also be understood that the term “and/or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.
  • the proximity exposure method is used in the setting process of the support pillars of some TFT-LCD color filter substrates. Due to the diffraction of light, the light (such as ultraviolet light) that actually passes through the photomask is not uniform. If the top surface of the support column is large, it is easy to form a concave structure (i.e. crater) on the top surface of the support column. Phenomenon). The contact area between the support pillar and the thin film transistor array substrate affects its supporting function. Referring to Figure 1, a display panel 100' has a color filter substrate 10' and a thin film transistor array substrate 20'.
  • the color filter substrate 10' has a substrate body 11' and a color photoresist layer 12' provided on one side of the substrate body 11'.
  • the side of the photoresist layer 12' facing away from the substrate body 11' is provided with a support structure composed of a main support column 131' and an auxiliary support column 132'.
  • the support structure is formed by exposure using a mask process. Since the mask area forming the auxiliary support pillar 132' is a semi-transparent area and is greatly affected by the diffraction of light, a crater 1320' phenomenon is formed on the top surface of the auxiliary support pillar 132'.
  • the inventor(s) have found through research that when the top surface size of the auxiliary support column 132' is greater than or equal to 16 ⁇ m, a crater phenomenon as shown in Figure 1 will be formed.
  • the color filter substrate has a display area located in the middle and a non-display area located at the periphery of the display area, which includes a substrate body, a color photoresist layer and a support structure; the color photoresist layer is located on one side of the substrate body, It includes a plurality of photoresist units; the support structure is located in the non-display area and includes a plurality of main support pillars and auxiliary support pillars. Each of the main support pillars or auxiliary support pillars is located on a side of a photoresist unit away from the substrate body.
  • the auxiliary support column has a first top surface facing away from the substrate body, and the first top surface has a planar area at least in the middle; the main support column has a second top surface facing away from the substrate body , the distance between the second top surface and the substrate body is greater than the distance between the first top surface of the auxiliary support column and the substrate body.
  • the middle part of the auxiliary support pillar of the color filter substrate is a flat area, which is beneficial to improving the flatness of the first top surface, thereby increasing the contact area between the first top surface and other structures (such as the film transistor array substrate).
  • the color filter substrate mentioned in this application may be a TFT-LCD color filter substrate.
  • the display panel can be a TFT-LCD display device, which can be used in vehicle displays, such as vehicle navigation and other vehicle products or components with display functions as vehicle display panels.
  • the display panel can also be applied to other products or components with display functions, such as mobile phones, tablet computers, televisions, laptops, and other products or components with display functions.
  • this application provides a display panel 100 .
  • the display panel includes a color filter substrate 10, a liquid crystal layer (not shown) and a thin film transistor array substrate 20.
  • the liquid crystal layer is located between the thin film transistor array substrate 20 and the color filter substrate 10 .
  • the display panel 100 has a display area located in the middle and a non-display area located at the periphery of the display area.
  • the liquid crystal layer is mainly filled between the thin film transistor array substrate 20 and the color filter substrate 10 in the display area.
  • the color filter substrate 10 has a part located in the display area and a part located in the non-display area.
  • the color filter substrate 10 includes a substrate body 11 , a color photoresist layer 12 and a support structure 13 .
  • the substrate body 11 can be made of transparent glass.
  • the color photoresist layer 12 is provided on one side of the substrate body 11 and includes a plurality of spaced photoresist units 121 .
  • the photoresist unit 121 may be at least one of red, green and blue photoresist units.
  • the support structure 13 is located in the non-display area and includes a plurality of main support pillars 131 and auxiliary support pillars 132 .
  • Each main support pillar 131 or auxiliary support pillar 132 is provided on a side of a photoresist unit away from the substrate body 11 .
  • the auxiliary support column 132 has a first top surface S1 on a side facing away from the substrate body 11 , and the first top surface S1 has a planar area at least in the middle.
  • the main support column 131 has a second top surface S2 facing away from the substrate body 11 , and the distance between the second top surface S2 and the substrate body 11 is greater than the first top surface S1 of the auxiliary support column 132 distance from the substrate body 11 .
  • the first top surface S1 and the second top surface S2 have a certain height difference H1 (as shown in Figure 2).
  • the color filter substrate 10 and the thin film transistor array substrate are supported by the main support pillars 131 .
  • the auxiliary support pillar 132 can play a certain supporting role.
  • the support structure 13 is located on the side of the substrate body 11 facing the thin film transistor array substrate 20 .
  • the distance between the first top surface S1 of the auxiliary support column 132 and the substrate body 11 is 2.5 ⁇ m-3.5 ⁇ m.
  • the distance between the second top surface S2 of the main support column 131 and the substrate body 11 is 3.0 ⁇ m-4.0 ⁇ m.
  • the distance difference (ie, the height difference) H1 between the second top surface S2 and the first top surface S1 and the substrate body 11 is 0.45 ⁇ m-0.55 ⁇ m.
  • the material of the support structure is a negative photosensitive material.
  • auxiliary support pillars 132 and the following main support pillars 131 are formed corresponding to the light-transmitting areas in the mask.
  • the photosensitive material corresponding to the opaque area in the mask can eventually be cleaned away to form a hollow.
  • the ratio between the area of the planar area in the middle of the first top surface S1 of the auxiliary support column 132 and the area of the first top surface S1 is 0.9-1, so that the plane area of the first top surface S1 The area reaches more than 90% of the entire first top surface S1, which can well ensure the flatness of the first top surface S1 of the auxiliary support pillar 132 and the contact area with other structures (such as the film transistor array substrate).
  • the size of the first top surface S1 of the auxiliary support pillar 132 is greater than or equal to 16 ⁇ m.
  • the size of the first top surface S1 can be understood as the maximum radial size of the first top surface S1.
  • the color filter substrate 10 has auxiliary support pillars 132 .
  • the auxiliary support column 132 is an integral solid structure, and the size d of the first top surface S11 is greater than or equal to 16 ⁇ . m.
  • the cross section of the first top surface S11 and other parts of the auxiliary support column 132 is generally a regular octagon, and the dimension d of the first top surface S11 can be understood as the radial size of the entire auxiliary support column 132 .
  • the first top surface and other cross-sections of the auxiliary support column 132 can also be other regular (such as regular hexagon, circle, ellipse, etc.) or irregular shapes, and the size of the first top surface can be It is understood as the maximum radial dimension passing through the first top surface (the maximum dimension passing through the center of the first top surface).
  • the first top surface is represented by the label S11 here. In other subsequent embodiments, the first top surface is also represented by different labels (such as S12, S13, S14, etc.).
  • the auxiliary support column 132 has a support column body 1321 located in the middle and a support ring 1322 located on the periphery of the support column body 1321 .
  • the size of the auxiliary support column 132 can be understood as the maximum radial size d of the support ring 1322 .
  • the inward recess of the isolation groove can be understood as the recess on the first top surface S1 of the auxiliary support column 132 toward the substrate body 11 side.
  • the depth of the isolation groove can be understood as the distance of the isolation groove in the direction along the first top surface S1 toward the substrate body 11 .
  • the preset depth of the isolation groove is smaller than the distance between the auxiliary support column 132 and the substrate body 11 .
  • the side of the support ring 1322 close to the substrate body 11 is integrally connected with the support column body 1321 .
  • the support ring 1322 may be a one-layer annular structure, and an annular isolation groove 1320 with a preset depth is provided between the support ring 1322 and the support column body 1321, as shown in Figures 4 and 6, for example.
  • the support ring 1322 can also be a multi-layer spaced ring structure, such as shown in FIG. 5 .
  • the size of the auxiliary support column can be understood as the maximum radial size of the outermost support ring.
  • support ring 1322 mentioned here may be a closed ring structure or an intermittent ring structure.
  • the shape of the support ring 1322 here is adapted to the shape of the support body.
  • the two shapes are consistent.
  • both are square shapes.
  • the shapes of the two are generally consistent or close.
  • the support body has a circular cross-section and the support ring has a regular octagonal shape.
  • the shape of the support body may also be a regular or irregular shape such as a rectangle, a hexagon, an ellipse, or the like.
  • the shape of the support ring 1322 may also be a regular or irregular shape such as a rectangle, a hexagon, an ellipse, or the like.
  • the first top surface dimension can be understood as the maximum radial dimension of the support ring (the maximum dimension passing through the center of the first top surface).
  • the dimension d1 of the support pillar body 1321 in the first top surface S1 is less than or equal to 16 ⁇ m, so as to ensure that no crater phenomenon is formed on the first top surface of the support pillar body 1321 formed using a mask. , that is, no concave recessed structure will be formed.
  • the non-display area has multiple support structure modules as shown in Figure 7 (can be understood as a support column cycle).
  • Each support structure module has a main support column 131 and a plurality of auxiliary support columns 132 .
  • some photoresist units 121 are provided with main support pillars 131 or auxiliary support pillars 132 correspondingly. Another part of the photoresist unit 121 is not provided with a main support column. Or auxiliary support column.
  • each photoresist unit may also be provided with a corresponding support column. This application does not limit this.
  • the photoresist unit 121 facing the main support column 131 may be a blue photoresist unit.
  • the color filter substrate 10 may also include a black matrix layer 14 and a planarization layer 15 .
  • the black matrix layer 14 is located between the color photoresist layer 12 and the substrate body 11 .
  • the planarization layer 15 is located between the color photoresist layer 12 and the support structure 13 .
  • this application further provides a mask 200 for preparing the color filter substrate 10 as described above.
  • the mask 200 can be used to prepare a color filter substrate with auxiliary support pillars similar to those shown in FIG. 3 .
  • the mask 200 includes a mask body 201 and a plurality of exposure units 202 .
  • the mask version body 201 is an opaque film structure.
  • Gr film can be used.
  • Each exposure unit 202 includes a first exposure area 2021 located in the middle and an annular second exposure area 2022 located at the periphery of the first exposure area 2021.
  • An annular first blocking ring 2023 is provided between the first exposure area 2021 and the second exposure area 2022.
  • the first exposure area 2021 and the second exposure area 2022 are semi-transmissive film structures.
  • the first shielding ring is an opaque film structure, such as Gr film.
  • the exposure unit 202 is shown in the mask 200 , and the actual mask 200 may have multiple exposure units 202 .
  • the overall outline of the exposure unit 202 is a regular octagon, and accordingly, the first exposure area 2021, the first shielding ring 2023, and the second exposure area 2022 are all corresponding regular octagons.
  • the exposure unit and its first exposure area, first shielding ring and second exposure area may also have other identical or adapted shapes. There are no limitations here.
  • the semi-transparent film structure or opaque film structure mentioned here can be understood as referring to the light used to form the support structure, such as ultraviolet UV light.
  • the size of the exposure unit 202 has a certain proportional relationship with the size of the auxiliary support column 132 formed.
  • the cross-sections of the exposure unit 202 and the auxiliary support column 132 have the same shape but different sizes.
  • the larger the size of the exposure unit 202 the larger the size of the auxiliary support column 132 formed.
  • the corresponding size of the exposure unit 202 can be set to be greater than or equal to 30 ⁇ m.
  • the radial dimension b1 of the first shielding ring 2023 is 1 ⁇ m-2 mm.
  • the radial dimension a1 of the second exposure area 2022 is 1.5 ⁇ m-3 ⁇ m.
  • the first shielding ring 2023 here is an annular shielding ring structure, and the second exposure area 2022 is a corresponding annular exposure area.
  • FIG. 9 is a schematic diagram of forming the auxiliary support pillars shown in FIG. 3 based on the mask shown in FIG. 8 .
  • the auxiliary support pillar 132 ′ is formed as shown in FIG.
  • the arrangement of the first shielding ring 2023 of the auxiliary support pillar 132 formed by the mask shown in Figure 8 can effectively eliminate the relatively convex part outside the central area of the auxiliary support pillar 132', thereby forming a relatively flat auxiliary support in the middle.
  • Column 132 is a schematic diagram of forming the auxiliary support pillars shown in FIG. 3 based on the mask shown in FIG. 8 .
  • the first blocking ring 2023 of the reticle 202 may include a plurality of intervals.
  • the second exposure area 2022 is a corresponding plurality of spaced annular exposure areas, such as area 5 shown in FIG. 10 .
  • the inventor(s) found through research that in some embodiments, the size of the exposure unit 202 of the fixed mask, the radial size of the first shielding ring 2023 and the second exposure In the case of the radial size of the area 2022, if the exposure unit 202 has a layer of annular second exposure area 2022, the first top surface S1 of the auxiliary support column 132 formed by it has better flatness.
  • the size and shape of the exposure unit 202 of the mask are fixed, when the radial size of the first shielding ring 2023 is adjusted within the range of 1 ⁇ m-2mm, the smaller the radial size of the first shielding ring 2023, the smaller the auxiliary support column.
  • the flatness of the first top surface S1 of 132 is better. It should be noted that, for the convenience of comparison, parts of different masks are placed together in Figure 10, and different areas correspond to different mask parts. Among them, the area Ref is the existing mask without the first occlusion ring. The mask part, areas 1, 2, 3, 4, and 5 are respectively different mask parts with the first shielding ring.
  • a1 is the radial size of the second exposure area 2022
  • b1 is the radial size of the first shielding ring 2023 .
  • the mask size is the maximum radial size of the exposure unit 202 .
  • Top Size is the maximum radial size of the first top surface.
  • PSH is the distance from the first top surface S1 to the substrate body 11 .
  • Crater Height is the height of the crater in the direction from the color filter substrate 10 to the thin film transistor array substrate 20 .
  • the inventor(s) also found that when the radial size of the second exposure area 2022 is 1.5um and the radial size of the first shielding ring 2023 is 1um, the flatness of the first top surface S1 is ideal. Moreover, in this embodiment, the first top surface dimension d of the auxiliary support column 132 can reach 19um or more.
  • This application also provides a mask similar to that shown in Figure 8 for preparing a color filter substrate with auxiliary support pillars similar to that shown in Figure 4.
  • the radial dimension of the first shielding ring of the mask is relatively larger than the radial dimension b1 of the first shielding ring of the mask shown in FIG. 8 .
  • the radial size of the first exposure area 2021 may be set to less than 30 ⁇ m. This size can correspondingly form the support pillar body 1321 with a radial size less than 16 ⁇ m.
  • the radial size and depth of the isolation groove 1320 of the auxiliary support column 132 are related to the radial size of the first shielding ring 2023.
  • the required radial size and depth of the isolation groove 1320 can be more specific. to set the radial size of the first shielding ring 2023.
  • This application also provides a mask corresponding to area 4 similar to that shown in Figure 10, for preparing a color filter substrate with auxiliary support pillars similar to that shown in Figure 6.
  • the first exposure area 2021 is a circular area.
  • the radial size of the first shielding ring of the mask is relatively larger than the radial size of the first shielding ring of the mask shown in FIG. 8 .
  • the radial size of the first exposure area 2021 may be set to less than 30 ⁇ m. This size can correspondingly form the support pillar body 1321 with a radial size less than 16 ⁇ m.
  • the radial size and depth of the isolation groove 1320 of the auxiliary support column 132 are related to the radial size of the first shielding ring 2023.
  • the required radial size and depth of the isolation groove 1320 can be more specific. to set the radial size of the first shielding ring 2023.
  • the present application also provides a mask corresponding to area 5 similar to that shown in Figure 10, for preparing a color filter substrate with auxiliary support pillars similar to that shown in Figure 5.
  • the mask plate 200 shown in FIG. 8 is that the polishing plate has a plurality of spaced first shielding ring structures, and the exposure unit 202 has a multi-layer ring-shaped second exposure area 2021.
  • the radial size of the first shielding ring of the mask is relatively larger than the radial size of the first shielding ring of the mask shown in FIG. 8 .
  • the radial size of the first exposure area 2021 may be set to less than 30 ⁇ m. This size can correspondingly form the support pillar body 1321 with a radial size less than 16 ⁇ m.
  • the radial size and depth of the isolation groove 1320 of the auxiliary support column 132 are related to the radial size of the first shielding ring 2023.
  • the required radial size and depth of the isolation groove 1320 can be more specific. to set the radial size of the first shielding ring 2023.
  • the present application further provides a mask 300 for preparing a color filter substrate 10 having an auxiliary support column 132 a similar to that shown in FIG. 3 .
  • the mask 300 includes a mask body 301 and a plurality of exposure units 302 .
  • the mask version body 301 is an opaque film structure.
  • Gr film can be used.
  • Each exposure unit 302 includes a third exposure area 3021 and a fourth exposure area 3022 located in the middle of the third exposure area 3021. Wherein, the light transmittance of the fourth exposure area 3022 is greater than the light transmittance of the third exposure area.
  • the arrangement of the fourth exposure area 3022 can effectively increase the thickness of the central area of the auxiliary support pillar, thereby making the auxiliary support pillar 132 flatter.
  • the third exposure area 3021 is a semi-transparent film structure.
  • the fourth exposure area 3022 has a fully transparent film structure.
  • the third exposure area 3021 and the fourth exposure area 3022 may be exactly matched and connected.
  • a second shielding ring 3023 is provided at the connection between the third exposure area 3021 and the fourth exposure area 3022 .
  • the second blocking ring 3023 may partially coincide with an edge of at least one of the third exposure area 3021 and the fourth exposure area 3022.
  • the radial dimension b2 of the fourth exposure area 3022 is 11 ⁇ m-13 ⁇ m, which has a significant effect on improving the flatness of the middle part of the auxiliary support pillar 132 .
  • the inventor(s) found through research that in some embodiments, the radial dimension a2 of the second shielding ring 3023 is less than or equal to 0.5 ⁇ m, which can effectively ensure that the auxiliary support column 132 Flatness of the first top surface S1. Moreover, when the entire area of the second shielding ring 3023 coincides with the edge of the third exposure area and does not overlap with the fourth exposure area 3022, the flatness of the first top surface S1 of the auxiliary support pillar 132 reaches a more ideal state. It should be noted that, for the convenience of comparison, parts of different masks are placed together in Figure 15, and different regional changes correspond to different mask parts.
  • areas F, G, H, and I are respectively the areas with the first occlusion ring.
  • a2 is the radial size of the second shielding ring 3023
  • b2 is the radial size of the fourth exposure area 3022. inch.
  • the mask size is the maximum radial size of the exposure unit 202 .
  • Top Size is the maximum radial size of the first top surface.
  • PSH is the distance from the first top surface S1 to the substrate body 11 .
  • Crater Height is the height of the crater in the direction from the color filter substrate 10 to the thin film transistor array substrate 20 .
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.
  • plurality and “several” refer to two or more than two, unless otherwise expressly limited.

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Abstract

一种彩膜基板（10）、显示面板（100）及掩膜版（200），具有位于中部的显示区和位于显示区外围的非显示区，其包括基板本体（11）、彩色光阻层（12）及支撑结构（13）；彩色光阻层（12）设于基板本体（11）的一侧，包括多个光阻单元（121）；支撑结构（13）位于非显示区，包括多个主支撑柱（131）及辅支撑柱（132），每一主支撑柱（131）或辅支撑柱（132）设于一光阻单元（121）背离基板本体（11）的一侧；辅支撑柱（132）具有背离基板本体（11）一侧的第一顶面（S1），第一顶面（S1）具有至少位于中部的平面区域；主支撑柱（131）具有背离基板本体（11）的第二顶面（S2），第二顶面（S2）与基板本体（11）之间的距离大于辅支撑柱（132）的第一顶面（S1）与基板本体（11）之间的距离。彩膜基板（10）的辅支撑柱（132）中部为平面区域，有利于改善第一顶面（S1）的平整度，提高第一顶面（S1）与其他结构比如薄膜晶体管阵列基板之间的接触面积。

Description

一种彩膜基板、显示面板及掩膜版 技术领域
本发明属于显示技术领域，尤其涉及一种彩膜基板、显示面板及掩膜版。
背景技术
TFT-LCD彩膜基板具有位于非显示区的支撑柱，用于支撑起彩膜基板与薄膜晶体管阵列基板之间的空间，以为液晶层提供设置空间。一些显示面板(比如车载显示面板)中，支撑柱的顶面尺寸较小时，容易导致强度不够，因而会将支撑柱的顶面尺寸设计的相对较大。支撑柱的顶面的平整度直接影响支撑柱与薄膜晶体管阵列基板的接触面积，从而影响支撑效果。相关技术中，对于支撑柱的顶面尺寸需要设计为较大的，支撑柱表面的平整度很难得到保证，尤其容易在中部出现凹陷区域。
发明内容
根据本发明实施例的第一方面，提供一种彩膜基板，具有位于中部的显示区和位于所述显示区外围的非显示区，其包括：
基板本体；
彩色光阻层，设于所述基板本体的一侧，包括多个光阻单元；
支撑结构，位于非显示区，包括多个主支撑柱及辅支撑柱，每一所述主支撑柱或辅支撑柱设于一光阻单元背离所述基板本体的一侧；所述辅支撑柱具有背离所述基板本体一侧的第一顶面，所述第一顶面具有至少位于中部的平面区域；所述主支撑柱具有背离所述基板本体的第二顶面，所述第二顶面与所述基板本体之间的距离大于所述辅支撑柱的第一顶面与所述基板本体之间的距离。
在一些实施例中，所述平面区域的面积与所述第一顶面的面积之间的比值为0.9-1。
在一些实施例中，所述辅支撑柱的第一顶面尺寸大于或等于16μm。
在一些实施例中，所述辅支撑柱具有位于中部的支撑柱主体及位于所述支撑柱主体外围的支撑环，所述支撑环与所述支撑柱主体之间具有自所述第一顶面向内凹陷预设深度的隔离槽；所述预设深度小于所述第一顶面与所述基板本体之间的距离。
在一些实施例中，所述支撑环为一层环状结构或多层间隔的环状结构。
在一些实施例中，所述支撑环的形状与所述支撑主体的形状适配。
在一些实施例中，所述支撑柱主体位于第一顶面内的尺寸小于或等于16μm。
在一些实施例中，所述支撑结构的材料为负型光感材料。
在一些实施例中，所述辅支撑柱的第一顶面与所述基板本体之间的距离为2.5μm-3.5μm；和/或，
所述主支撑柱的第二顶面与所述基板本体之间的距离为3.0μm-4.0μm；和/或，
所述第二顶面与所述第一顶面二者与所述基板本体之间的距离差为0.45μm-0.55μm。
根据本发明实施例的第二方面，提供一种显示面板，所述显示面板包括液晶层、薄膜晶体管阵列基板及如上所述的彩膜基板，所述液晶层位于所述薄膜晶体管阵列基板与所述彩膜基板之间，且所述支撑柱朝向所述薄膜晶体管阵列基板。
根据本发明实施例的第三方面，提供一种掩膜版，用于制备如上所述的彩膜基板，包括：
掩膜版本体，所述掩膜版本体为不透光膜结构；
多个曝光单元，每一曝光单元包括位于中部的第一曝光区域及位于所述第一曝光区域外围的并呈环状的第二曝光区域；所述第一曝光区域和所述第二曝光区域之间设有环状的第一遮挡环；其中，所述第一曝光区域和所第二曝光区域为半透光膜结构，所述第一遮挡环为不透光膜结构。
在一些实施例中，所述第一曝光区域的径向尺寸小于30μm。
在一些实施例中，所述第一遮挡环的径向尺寸为1μm-2mm；和/或，
所述第二曝光区域的径向尺寸为1.5μm-3μm；和/或，
所述第一遮挡环包括一个或多个间隔设置的遮挡环结构，所述第二曝光区域为对应的一个或多个间隔的环状曝光区域。
根据本发明实施例的第四方面，提供一种掩膜版，用于制备如上所述的彩膜基板，包括：
掩膜版本体，所述掩膜版本体为不透光膜结构；
多个曝光单元，每一曝光单元包括第三曝光区域及位于所述第三曝光区域中部的第四曝光区域；其中，所述第四曝光区域的透光性大于所述第三曝光区域的透光性。
在一些实施例中，所述第三曝光区域为半透光膜结构，所述第四曝光区域为全透光膜结构。
在一些实施例中，所述第三曝光区域和所述第四曝光区域的连接处设有第二遮挡环，所述第二遮挡环与所述第三曝光区域的部分重合，和/或所述第二遮挡环与所述第四曝光区域的部分重合。
在一些实施例中，所述第二遮挡环的径向尺寸小于或等于0.5μm。
在一些实施例中，所述第四曝光区域的径向尺寸为11μm-13μm。
本申请提供的上述彩膜基板、显示面板及掩膜版，彩膜基板的辅支撑柱中部为平面区域，有利于改善第一顶面的平整度，从而提高第一顶面与其他结构(比如膜晶体管阵列基板)之间的接触面积。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本发明。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本发明的实施例，并与说明书一起用于解释本发明的原理。
图1为相关技术中的一种显示面板的局部剖视图；
图2为根据本发明实施例示出的一种显示面板的局部剖视图；
图3为根据本发明实施例示出的一种辅支撑柱的第一顶面的示意图；
图4为根据本发明实施例示出的另一种辅支撑柱的第一顶面的示意图；
图5为根据本发明实施例示出的另一种辅支撑柱的第一顶面的示意图；
图6为根据本发明实施例示出的又一种辅支撑柱的第一顶面的示意图；
图7为根据本发明实施例示出的一种支撑结构模块示意图；
图8为根据本发明实施例示出的一种掩膜版的示意图；
图9为根据图8所示掩膜版形成辅支撑柱的原理图；
图10为一组不同掩膜版的示意图；
图11为根据图10所示不同掩膜版形成的辅支撑柱的数据表；
图12为根据图10所示不同掩膜版所形成的辅支撑柱的实测示意图；
图13为根据本发明实施例示出的另一种掩膜版的示意图；
图14为根据图13所示掩膜版形成辅支撑柱的原理图；
图15为另一组不同掩膜版的示意图；
图16为根据图15所示不同掩膜版形成的辅支撑柱的数据表；
图17为根据图15所示不同掩膜版所形成的辅支撑柱的实测示意图。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本发明相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本发明的一些方面相一致的装置和方法的例子。
在本申请使用的术语是仅仅出于描述特定实施例的目的，而非旨在限制本申请。除非另作定义，本申请使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本申请说明书以及权利要求书中使用的“一个”或者“一”等类似词语也不表示数量限制，而是表示存在至少一个。“多个”表示两个或两个以上。“包括”或者“包含” 等类似词语意指出现在“包括”或者“包含”前面的元件或者物件涵盖出现在“包括”或者“包含”后面列举的元件或者物件及其等同，并不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而且可以包括电性的连接，不管是直接的还是间接的。“上”和/或“下”等类似词语只是为了便于说明，而并非限于一个位置或者一种空间定向。在本申请说明书和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式，除非上下文清楚地表示其他含义。还应当理解，本文中使用的术语“和/或”是指并包含一个或多个相关联的列出项目的任何或所有可能组合。
目前一些TFT-LCD彩膜基板的支撑柱设置过程中采用的是接近式曝光方式。由于光的衍射作用，实际透过光掩膜版的光(比如紫外UV光)不均一，对于支撑柱的顶面尺寸较大的，容易在支撑柱的顶面形成凹陷状结构(即火山口现象)。支撑柱与薄膜晶体管阵列基板的接触面积，影响其支撑作用。请参照图1所示，显示面板100’具有彩膜基板10’及薄膜晶体管阵列基板20’。彩膜基板10’具有基板本体11’及设于基板本体11’一侧的彩色光阻层12’。光阻层12’背离基板本体11’的一侧设有由主支撑柱131’和辅支撑柱132’构成的支撑结构。该支撑结构利用掩膜版工艺进行曝光形成。由于形成辅支撑柱132’的掩膜版区域为半透区域，受光的衍射作用影响较大，在辅支撑柱132’的顶面形成火山口1320’现象。发明人(们)经过研究发现在辅支撑柱132’的顶面尺寸大于或等于16μm时，就会形成如图1所示的火山口现象。
为此，本申请提供一种彩膜基板、显示面板及掩膜版。所述彩膜基板具有位于中部的显示区和位于所述显示区外围的非显示区，其包括基板本体、彩色光阻层及支撑结构；彩色光阻层设于所述基板本体的一侧，包括多个光阻单元；支撑结构位于非显示区，包括多个主支撑柱及辅支撑柱，每一所述主支撑柱或辅支撑柱设于一光阻单元背离所述基板本体的一侧；所述辅支撑柱具有背离所述基板本体一侧的第一顶面，所述第一顶面具有至少位于中部的平面区域；所述主支撑柱具有背离所述基板本体的第二顶面，所述第二顶面与所述基板本体之间的距离大于所述辅支撑柱的第一顶面与所述基板本体之间的距离。上述结构，彩膜基板的辅支撑柱中部为平面区域，有利于改善第一顶面的平整度，从而提高第一顶面与其他结构(比如膜晶体管阵列基板)之间的接触面积。
本申请所说的彩膜基板可为TFT-LCD彩膜基板。显示面板可为TFT-LCD显示器件，可应用于车载显示器中，比如车载导航等具有显示功能的车载产品或部件中而作为车载显示面板。当然，该显示面板也可以应用于其他具有显示功能的产品或部件中，比如可应用于手机、平板电脑、电视机、笔记本电脑、等具有显示功能的产品或部件中，作为手机、平板电脑、电视机、笔记本电脑、等具有显示功能的产品或部件的显示面板。
下面结合附图2至图17对本申请所提供的彩膜基板、显示面板及掩膜版进行详细描述。
请参照图2所示，本申请提供一种显示面板100。该显示面板包括彩膜基板10、液晶层(未示出)及薄膜晶体管阵列基板20。所述液晶层位于所述薄膜晶体管阵列基板20与所述彩膜基板10之间。显示面板100具有位于中部的显示区和位于所述显示区外围的非显示区。液晶层主要填充于显示区的薄膜晶体管阵列基板20与所述彩膜基板10之间。
彩膜基板10具有位于显示区的部分和位于非显示区的部分。该彩膜基板10包括基板本体11、彩色光阻层12及支撑结构13。
该基板本体11可以为透明玻璃。
彩色光阻层12设于所述基板本体11的一侧，包括多个间隔的光阻单元121。光阻单元121可以为红色、绿色和蓝色光阻单元中的至少一种。
支撑结构13位于非显示区，包括多个主支撑柱131及辅支撑柱132，每一主支撑柱131或辅支撑柱132设于一光阻单元背离所述基板本体11的一侧。所述辅支撑柱132具有背离所述基板本体11一侧的第一顶面S1，所述第一顶面S1具有至少位于中部的平面区域。所述主支撑柱131具有背离所述基板本体11的第二顶面S2，所述第二顶面S2与所述基板本体11之间的距离大于所述辅支撑柱132的第一顶面S1与所述基板本体11之间的距离。即第一顶面S1和第二顶面S2具有一定的高度差H1(如图2所示)。相应地，显示面板100在自然状态下时，靠主支撑柱131支撑彩膜基板10和薄膜晶体管阵列基板。在显示面板100受到按压等作用力时，辅支撑柱132可以起到一定的支撑作用。
这里所述支撑结构13位于基板本体11朝向所述薄膜晶体管阵列基板20的一侧。在一些实施例中，所述辅支撑柱132的第一顶面S1与所述基板本体11之间的距离为2.5μm-3.5μm。
在一些实施例中，所述主支撑柱131的第二顶面S2与所述基板本体11之间的距离为3.0μm-4.0μm。
所述第二顶面S2与所述第一顶面S1二者与所述基板本体11之间的距离差(即二者的高度差)H1为0.45μm-0.55μm。
所述支撑结构的材料为负型光感材料。相应地，在采用掩膜版形成支撑结构时，掩膜版中的透光区域所对应处形成有辅支撑柱132及下述的主支撑柱131。掩膜版中不透光区域所对应处的光感材料最终可被清洗掉而形成镂空处。
在一些实施例中，所述辅支撑柱132第一顶面S1中部的平面区域的面积与所述第一顶面S1的面积之间的比值为0.9-1，使得第一顶面S1的平面区域达到整个第一顶面S1的90％以上，能够很好地保证辅支撑柱132的第一顶面S1的平坦性，以及与其他结构(比如膜晶体管阵列基板)之间的接触面积。
在一些实施例中，所述辅支撑柱132的第一顶面S1尺寸大于或等于16μm。
这里第一顶面S1尺寸，可以理解为第一顶面S1的最大径向尺寸。
请结合图3所示，在一些实施例中，彩膜基板10具有辅支撑柱132。该辅支撑柱132为一整体实心结构，其第一顶面S11尺寸d大于或等于16μ m。
这里辅支撑柱132第一顶面S11及其他部分的截面大致呈正八边形，第一顶面S11尺寸d可以理解为整个辅支撑柱132的径向尺寸。
当然，在其它一些实施例中，辅支撑柱132的第一顶面及其他截面还可为其他规则(比如正六边形、圆形、椭圆等)或不规则的图形，第一顶面尺寸可以理解为过第一顶面的最大径向尺寸(过第一顶面中心的最大尺寸)。
需要说明的是，为方便描述，这里第一顶面采用标号S11表示，后续其他实施例中，第一顶面也采用不同的标号(比如S12、S13、S14等)表示。
请结合图4至图6所示，在另一些实施例中，所述辅支撑柱132具有位于中部的支撑柱主体1321及位于所述支撑柱主体1321外围的支撑环1322。相应地，辅支撑柱132的尺寸，可以理解为支撑环1322的最大径向尺寸d。所述支撑环1322与所述支撑柱主体1321之间具有自所述第一顶面S1向内凹陷预设深度的隔离槽。
需要说明的是，该隔离槽向内凹陷可以理解为在辅支撑柱132的第一顶面S1向基板本体11一侧凹陷。该隔离槽的深度可以理解为隔离槽在沿第一顶面S1朝向基板本体11方向上的距离。该隔离槽的预设深度小于辅支撑柱132与基板本体11之间的距离。相应地，支撑环1322靠近基板本体11的一侧与支撑柱主体1321连接为一体。
所述支撑环1322可以为一层环状结构，该支撑环1322与支撑柱主体1321之间设有具有预设深度的环状隔离槽1320，比如如图4和图6所示。
当然，支撑环1322也可以为多层间隔的环状结构，比如图5所示。对于支撑环1322为多层间隔的环状结构，辅支撑柱的尺寸可以理解为最外围的支撑环的最大径向尺寸。
需要说明的是，这里所说的支撑环1322可以为闭合环状结构，也可为间断式的环状结构。
这里所说的支撑环1322的形状与所述支撑主体的形状适配。在一些实施例中，可以理解为二者形状一致，比如图4和图5所示，二者均为正边形。在另一些实施例中，可以理解为二者的形状大致一致或接近。比如图6所示的，支撑主体的截面呈圆形，支撑环呈正八边形。
需要说明的是，支撑主体的形状还可为矩形、六边形、椭圆形等规则或不规则的形状。支撑环1322的形状也可以为矩形、六边形、椭圆形等规则或不规则的形状。相应的，第一顶面尺寸可以理解为支撑环的最大径向尺寸(过第一顶面中心的最大尺寸)。
在一些实施例中，支撑柱主体1321在第一顶面S1内的尺寸d1小于或等于16μm，如此以保证在采用掩膜版形成的支撑柱主体1321的第一顶面不会形成火山口现象，即不会形成内凹的凹陷结构。
请结合图7所示，非显示区具有多个如图7所示的支撑结构模块(可以理解为一个支撑柱周期)。每一支撑结构模块具有一个主支撑柱131及多个辅支撑柱132。如图7所示，该实施例中，部分光阻单元121对应设置有主支撑柱131或辅支撑柱132。另一部分光阻单元121对应处并未设有主支撑柱 或辅支撑柱。当然，在其它实施例中，也可将每一光阻单元均设置有一对应的支撑柱。本申请对此不做限定。需要说明的是，主支撑柱131所对的光阻单元121可以为蓝色光阻单元。
需要说明的是，彩膜基板10还可包括黑矩阵层14及平坦化层15。黑矩阵层14位于彩色光阻层12和基板本体11之间。平坦化层15位于彩色光阻层12与支撑结构13之间。
如图8所示，本申请另提供一掩膜版200，用于制备如上所述的彩膜基板10。其中该掩膜版200可用于制备具有类似图3所示辅支撑柱的彩膜基板。
该掩膜版200包括掩膜版本体201和多个曝光单元202。所述掩膜版本体201为不透光膜结构。比如，可采用Gr膜。
每一曝光单元202包括位于中部的第一曝光区域2021及位于所述第一曝光区域2021外围的并呈环状的第二曝光区域2022。所述第一曝光区域2021和所述第二曝光区域2022之间设有环状的第一遮挡环2023。其中，所述第一曝光区域2021和所第二曝光区域2022为半透光膜结构。所述第一遮挡环为不透光膜结构，比如Gr膜。
需要说明的是，该掩膜版200中仅示意出一个曝光单元202，实际的掩膜版200可具有多个曝光单元202。这里曝光单元202的整体轮廓为正八边形，相应地，第一曝光区域2021、第一遮挡环2023及第二曝光区域2022均为相应的正八边形。在其它一些实施例中，曝光单元及其第一曝光区域、第一遮挡环及第二曝光区域还可以为其它相同或适配的形状。这里不做限定。
还需要说明的是，这里所说的半透光膜结构或不透光膜结构可以理解为针对形成支撑结构所采用的光线而言的，比如紫外UV光。
通常，曝光单元202的尺寸与所形成的辅支撑柱132的尺寸具有一定的正比例关系。曝光单元202的与辅支撑柱132的截面二者的形状一致，大小不同。曝光单元202的尺寸越大，所形成的辅支撑柱132的尺寸越大。对于制备类似具有图3所示辅支撑柱的彩膜基板的，在一些实施例中，为了形成第一表面S1大于或等于16μm的辅支撑柱132，曝光单元202的相应尺寸可设置为大于等于30μm。
需要说明的是，对于制备类似具有图3所示辅支撑柱的彩膜基板的，在一些实施例中，所述第一遮挡环2023的径向尺寸b1为1μm-2mm。
所述第二曝光区域2022的径向尺寸a1为1.5μm-3μm。
这里的第一遮挡环2023为一个环状的遮挡环结构，所述第二曝光区域2022为对应的一个环状曝光区域。
图9为根据图8所示掩膜版形成具有图3所示辅支撑柱的原理图。结合图9所示，这里需要说明的是，相对于采用与图8所示掩膜版具有相同尺寸而不设置第一遮挡环2023的掩膜版形成的辅支撑柱132’，这里采用如图8所示的掩膜版所形成的辅支撑柱132，其第一遮挡环2023的设置，能够有效消除辅支撑柱132’中心区域外侧的相对凸起的部分，从而形成中部较为平坦的辅支撑柱132。
在其它一些实施例中，掩膜版202的第一遮挡环2023可包括多个间隔 设置的遮挡环结构，所述第二曝光区域2022为对应的多个间隔的环状曝光区域，比如图10所示的区域5所示。
请结合图10至图12所示，发明人(们)通过研究发现，在一些实施例中，在固定掩膜版的曝光单元202的尺寸及第一遮挡环2023的径向尺寸及第二曝光区域2022的径向尺寸的情况下，曝光单元202中具有一层环状第二曝光区域2022的，其所形成的辅支撑柱132的第一顶面S1平坦性更好。在固定掩膜版的曝光单元202的尺寸及形状的情况下，第一遮挡环2023的径向尺寸在1μm-2mm范围内调整时，第一遮挡环2023的径向尺寸越小，辅支撑柱132的第一顶面S1的平坦性越好。需要说明的是，为便于对比，图10中将不同掩膜版的局部置于一起，不同区域对应不同掩膜版部分，其中，区域Ref为采用现有的不具有第一遮挡环的掩膜版部分，区域1、2、3、4、5分别为具有第一遮挡环的不同掩膜版部分。图11所示的图表中，a1为第二曝光区域2022的径向尺寸，b1为第一遮挡环2023的径向尺寸。掩膜版尺寸为曝光单元202的最大径向尺寸。Top Size为第一顶面的径向最大尺寸。PSH为第一顶面S1至基板本体11的距离。火山口Height为火山口在沿彩膜基板10至薄膜晶体管阵列基板20方向上的高度。
发明人(们)还发现在第二曝光区域2022的径向尺寸为1.5um第一遮挡环2023的径向尺寸为1um的情况下，第一顶面S1的平坦性较为理想。并且，该实施例中，辅支撑柱132的第一顶面尺寸d可达到19um及以上。
本申请另提供一种类似图8所示的掩膜版，用以制备具有类似图4所示辅支撑柱的彩膜基板。相对于掩膜版200而言，该掩膜版的第一遮挡环的径向尺寸相对设置的会比图8所示的掩膜版的第一遮挡环的径向尺寸b1更大些。其它相似或相同之处可参照上述相关描述，这里不做赘述。
为了保证支撑主体1321位于第一顶面S1的区域的平坦性，在一些实施例中，所述第一曝光区域2021的径向尺寸可设置为小于30μm。该尺寸可相应形成径向尺寸小于16μm的支撑柱主体1321。
这里需要说明的是，所形成的辅支撑柱132的隔离槽1320的径向尺寸及深度与第一遮挡环2023的径向尺寸相关，可以更加具体所需隔离槽1320的径向尺寸及深度，来设置第一遮挡环2023的径向尺寸。
本申请另提供一种类似图10所示区域4所对应的掩膜版，用以制备具有类似图6所示辅支撑柱的彩膜基板。与图8所示掩膜版200不同的是，第一曝光区域2021为圆形区域。同样的，该掩膜版的第一遮挡环的径向尺寸相对设置的会比图8所示的掩膜版的第一遮挡环的径向尺寸更大些。其它相似或相同之处可参照上述相关描述，这里不做赘述。
同样，为了保证支撑主体1321位于第一顶面S1的区域的平坦性，在一些实施例中，所述第一曝光区域2021的径向尺寸可设置为小于30μm。该尺寸可相应形成径向尺寸小于16μm的支撑柱主体1321。
这里需要说明的是，所形成的辅支撑柱132的隔离槽1320的径向尺寸及深度与第一遮挡环2023的径向尺寸相关，可以更加具体所需隔离槽1320的径向尺寸及深度，来设置第一遮挡环2023的径向尺寸。
本申请另提供一种类似图10所示区域5所对应的掩膜版，用以制备具有类似图5所示辅支撑柱的彩膜基板。与图8所示掩膜版200不同的是，该研磨板具有多个间隔的第一遮挡环结构，曝光单元202具有多层环状的第二曝光区域2021。同样的，该掩膜版的第一遮挡环的径向尺寸相对设置的会比图8所示的掩膜版的第一遮挡环的径向尺寸更大些。其它相似或相同之处可参照上述相关描述，这里不做赘述。
同样，为了保证支撑主体1321位于第一顶面S1的区域的平坦性，在一些实施例中，所述第一曝光区域2021的径向尺寸可设置为小于30μm。该尺寸可相应形成径向尺寸小于16μm的支撑柱主体1321。
这里需要说明的是，所形成的辅支撑柱132的隔离槽1320的径向尺寸及深度与第一遮挡环2023的径向尺寸相关，可以更加具体所需隔离槽1320的径向尺寸及深度，来设置第一遮挡环2023的径向尺寸。
请参照图13所示，本申请另提供一种掩膜版300，用于制备具有类似图3所示辅支撑柱132a的彩膜基板10。该掩膜版300包括掩膜版本体301和多个曝光单元302。
所述掩膜版本体301为不透光膜结构。比如，可采用Gr膜。
每一曝光单元302包括第三曝光区域3021及位于所述第三曝光区域3021中部的第四曝光区域3022。其中，所述第四曝光区域3022的透光性大于所述第三曝光区域的透光性。
需要说明的是，该掩膜版300中仅示意出一个曝光单元302，实际的掩膜版300可具有多个曝光单元302。
请结合图14所示，第四曝光区域3022的设置，能够有效提升辅支撑柱中心区域的厚度，从而使得辅支撑柱132较为平坦。
在一些实施例中，所述第三曝光区域3021为半透光膜结构。所述第四曝光区域3022为全透光膜结构。
在一些实施例中，该第三曝光区域3021和第四曝光区域3022可以刚好匹配连接。当然，在另一些实施例中，所述第三曝光区域3021和所述第四曝光区域3022的连接处设有第二遮挡环3023。所述第二遮挡环3023可与所述第三曝光区域3021和所述第四曝光区域3022二者中的至少一个的边缘部分重合。
在一些实施例中，所述第四曝光区域3022的径向尺寸b2为11μm-13μm，其对于辅支撑柱132中部的平坦性具有显著提升的效果。
请结合图15至图17所示，发明人(们)通过研究发现，在一些实施例中，所述第二遮挡环3023的径向尺寸a2小于或等于0.5μm，能够有效保证辅支撑柱132第一顶面S1的平坦性。且，在第二遮挡环3023的全部区域与第三曝光区域的边缘重合，而不与第四曝光区域3022重合时，辅支撑柱132第一顶面S1的平坦性达到较理想的状态。需要说明的是，为便于对比，图15中将不同掩膜版的局部置于一起，不同区域变化对应不同掩膜版部分，其中区域F、G、H、I分别为具有第一遮挡环的不同掩膜版部分。图16所示的图表中，a2为第二遮挡环3023的径向尺寸，b2为第四曝光区域3022的径向尺 寸。掩膜版尺寸为曝光单元202的最大径向尺寸。Top Size为第一顶面的径向最大尺寸。PSH为第一顶面S1至基板本体11的距离。火山口Height为火山口在沿彩膜基板10至薄膜晶体管阵列基板20方向上的高度。
在本申请中，所述结构实施例与方法实施例在不冲突的情况下，可以互为补充。
在本发明中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。术语“多个”、“若干”指两个或两个以上，除非另有明确的限定。
本领域技术人员在考虑说明书及实践这里公开的公开后，将容易想到本发明的其它实施方案。本发明旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本发明未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由下面的权利要求指出。
应当理解的是，本发明并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (18)

  1. 一种彩膜基板，具有位于中部的显示区和位于所述显示区外围的非显示区，其特征在于，包括：
    基板本体；
    彩色光阻层，设于所述基板本体的一侧，包括多个光阻单元；
    支撑结构，位于非显示区，包括多个主支撑柱及辅支撑柱，每一所述主支撑柱或辅支撑柱设于一光阻单元背离所述基板本体的一侧；所述辅支撑柱具有背离所述基板本体一侧的第一顶面，所述第一顶面具有至少位于中部的平面区域；所述主支撑柱具有背离所述基板本体的第二顶面，所述第二顶面与所述基板本体之间的距离大于所述辅支撑柱的第一顶面与所述基板本体之间的距离。
  2. 如权利要求1所述的彩膜基板，其特征在于，所述平面区域的面积与所述第一顶面的面积之间的比值为0.9-1。
  3. 如权利要求1所述的彩膜基板，其特征在于，所述辅支撑柱的第一顶面尺寸大于或等于16μm。
  4. 如权利要求1所述的彩膜基板，其特征在于，所述辅支撑柱具有位于中部的支撑柱主体及位于所述支撑柱主体外围的支撑环，所述支撑环与所述支撑柱主体之间具有自所述第一顶面向内凹陷预设深度的隔离槽；所述预设深度小于所述第一顶面与所述基板本体之间的距离。
  5. 如权利要求4所述的彩膜基板，其特征在于，所述支撑环为一层环状结构或多层间隔的环状结构。
  6. 如权利要求4所述的彩膜基板，其特征在于，所述支撑环的形状与所述支撑主体的形状适配。
  7. 如权利要求4所述的彩膜基板，其特征在于，所述支撑柱主体位于第一顶面内的尺寸小于或等于16μm。
  8. 如权利要求1所述的彩膜基板，其特征在于，所述支撑结构的材料为负型光感材料。
  9. 如权利要求1所述的彩膜基板，其特征在于，所述辅支撑柱的第一顶面与所述基板本体之间的距离为2.5μm-3.5μm；和/或，
    所述主支撑柱的第二顶面与所述基板本体之间的距离为3.0μm-4.0μm；和/或，
    所述第二顶面与所述第一顶面二者与所述基板本体之间的距离差为0.45μm-0.55μm。
  10. 一种显示面板，其特征在于，所述显示面板包括液晶层、薄膜晶体管阵列基板及如权利要求1至9中任一项所述的彩膜基板，所述液晶层位于所述薄膜晶体管阵列基板与所述彩膜基板之间，且所述支撑柱朝向所述薄膜晶体管阵列基板。
  11. 一种掩膜版，用于制备如权利要求1至9中任一项所述的彩膜基板，其特征在于，包括：
    掩膜版本体，所述掩膜版本体为不透光膜结构；
    多个曝光单元，每一曝光单元包括位于中部的第一曝光区域及位于所述第一曝光区域外围的并呈环状的第二曝光区域；所述第一曝光区域和所述第二曝光区域之间设有环状的第一遮挡环；其中，所述第一曝光区域和所第二曝光区域为半透光膜结构，所述第一遮挡环为不透光膜结构。
  12. 如权利要求11所述的掩膜版，其特征在于，所述第一曝光区域的径向尺寸小于30μm。
  13. 如权利要求11所述的掩膜版，其特征在于，所述第一遮挡环的径向尺寸为1μm-2mm；和/或，
    所述第二曝光区域的径向尺寸为1.5μm-3μm；和/或，
    所述第一遮挡环包括一个或多个间隔设置的遮挡环结构，所述第二曝光区域为对应的一个或多个间隔的环状曝光区域。
  14. 一种掩膜版，用于制备如权利要求1-3、8及9中任一项所述的彩膜基板，其特征在于，包括：
    掩膜版本体，所述掩膜版本体为不透光膜结构；
    多个曝光单元，每一曝光单元包括第三曝光区域及位于所述第三曝光区域中部的第四曝光区域；其中，所述第四曝光区域的透光性大于所述第三曝光区域的透光性。
  15. 如权利要求14所述的掩膜版，其特征在于，所述第三曝光区域为半透光膜结构，所述第四曝光区域为全透光膜结构。
  16. 如权利要求14所述的掩膜版，其特征在于，所述第三曝光区域和所述第四曝光区域的连接处设有第二遮挡环，所述第二遮挡环与所述第三曝光区域的部分重合，和/或所述第二遮挡环与所述第四曝光区域的部分重合。
  17. 如权利要求16所述的掩膜版，其特征在于，所述第二遮挡环的径向尺寸小于或等于0.5μm。
  18. 如权利要求14至17中任一项所述的掩膜版，其特征在于，所述第四曝光区域的径向尺寸为11μm-13μm。
PCT/CN2023/110340 2022-08-31 2023-07-31 一种彩膜基板、显示面板及掩膜版 WO2024045984A1 (zh)

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