WO2020059204A1 - Élément de batterie solaire, dispositif de batterie solaire et module de batterie solaire - Google Patents

Élément de batterie solaire, dispositif de batterie solaire et module de batterie solaire Download PDF

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Publication number
WO2020059204A1
WO2020059204A1 PCT/JP2019/019528 JP2019019528W WO2020059204A1 WO 2020059204 A1 WO2020059204 A1 WO 2020059204A1 JP 2019019528 W JP2019019528 W JP 2019019528W WO 2020059204 A1 WO2020059204 A1 WO 2020059204A1
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Prior art keywords
solar cell
solar battery
electrode layer
solar
semiconductor substrate
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PCT/JP2019/019528
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English (en)
Japanese (ja)
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中村　淳一
徹 寺下
広平 小島
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株式会社カネカ
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Publication of WO2020059204A1 publication Critical patent/WO2020059204A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell, a solar cell device including the same, and a solar cell module including the solar cell device.
  • a solar cell string (solar cell device)
  • more solar cells can be mounted in the limited solar cell mounting area of the solar cell module, the light receiving area for photoelectric conversion increases, and the Output is improved.
  • the solar cell string (solar cell device)
  • no gap is formed between the solar cells, and the design of the solar cell module is improved.
  • An object of the present invention is to provide a solar cell capable of improving the output and design of a solar cell device or a solar cell module, a solar cell device including the same, and a solar cell module including the solar cell device. I do.
  • a part of one main surface on one end side of one of the adjacent solar cells is a part of the other solar cell of the adjacent solar cells.
  • a solar cell used for a battery device comprising: a semiconductor substrate; a conductive semiconductor layer formed on at least the other main surface side of the semiconductor substrate; and an electrode layer formed of a transparent electrode layer and a metal electrode layer.
  • the specific region is included on the other main surface side of one of the solar cells in the overlapping region where the adjacent solar cells overlap each other, and the specific region is at least 20% and 100% of the overlapping region. Is below The specific area, at least a metal electrode layer of the electrode layer is not formed.
  • the solar cell device is a solar cell device that electrically connects the plurality of solar cells described above using a shingling method, and one of one of the adjacent solar cells.
  • a part of the one main surface side of the end side is one side of the other main surface side opposite to the one main surface side opposite to the one end side of the other solar cell of the adjacent solar cells. Overlap under the part.
  • a solar cell module according to the present invention includes the above-described solar cell device.
  • the output of the solar cell device or the solar cell module is improved, and the design of the solar cell device or the solar cell module is improved.
  • FIG. 2 is a sectional view taken along line II-II of the solar cell module shown in FIG. 1.
  • FIG. 3 is a diagram of a solar cell in the solar cell device shown in FIGS. 1 and 2 as viewed from the back side.
  • FIG. 4 is a cross-sectional view taken along the line IVA-IVA of the solar cell shown in FIG. 3.
  • FIG. 4 is a sectional view taken along line IVB-IVB of the solar battery cell shown in FIG. 3.
  • FIG. 4 is an enlarged cross-sectional view near the overlap region of the solar cell device shown in FIG. 2 and is a cross-sectional view corresponding to line IVA-IVA shown in FIG. 3.
  • FIG. 4 is an enlarged cross-sectional view near the overlapping region of the solar cell device shown in FIG. 2 and is a cross-sectional view corresponding to line IVB-IVB shown in FIG.
  • a solar cell is manufactured using a large-sized semiconductor substrate (for example, a substantially square shape) having a predetermined size (for example, 6 inches). Since such a large-sized semiconductor substrate is expensive, it is conventionally effectively used up to the vicinity of the edge of the large-sized semiconductor substrate. That is, the electrode is formed near the edge of the large-sized semiconductor substrate, and the current photoelectrically converted near the edge of the large-sized semiconductor substrate is also effectively used.
  • a large-sized semiconductor substrate for example, a substantially square shape having a predetermined size (for example, 6 inches). Since such a large-sized semiconductor substrate is expensive, it is conventionally effectively used up to the vicinity of the edge of the large-sized semiconductor substrate. That is, the electrode is formed near the edge of the large-sized semiconductor substrate, and the current photoelectrically converted near the edge of the large-sized semiconductor substrate is also effectively used.
  • the photoelectric conversion efficiency is lower near the edge of the large-sized semiconductor substrate than in the inside thereof.
  • the inventor of the present application proposes that the vicinity of the edge of the large-sized semiconductor substrate is superimposed under the adjacent solar cell so as to shield light, so that the vicinity of the edge does not contribute to photoelectric conversion. Further, in order to avoid a decrease in photoelectric conversion efficiency due to a dark current generated in the vicinity of the light-shielded edge, it is proposed not to form an electrode near the edge.
  • FIG. 1 is a view of the solar cell module including the solar cell device according to the present embodiment as viewed from the back side
  • FIG. 2 is a cross-sectional view of the solar cell module shown in FIG. 1 taken along the line II-II.
  • a light-receiving-side protection member 3, a back-side protection member 4, and a sealing material 5, which will be described later, are omitted, and a connection member 6, which will be described later, is shown through.
  • the solar cell module 100 is a solar cell device that electrically connects a plurality of rectangular back electrode type (back junction type) solar cells 2 using a shingling method ( 1 (also referred to as a solar cell string).
  • a shingling method 1 (also referred to as a solar cell string).
  • the solar cell device 1 is sandwiched between the light receiving side protection member 3 and the back side protection member 4.
  • a liquid or solid sealing material 5 is filled between the light receiving side protection member 3 and the back side protection member 4, whereby the solar cell device 1 is sealed.
  • the sealing material 5 seals and protects the solar cell device 1, that is, the solar cell 2, between the light receiving side surface of the solar cell 2 and the light receiving side protection member 3, and 2 between the back side surface and the back side protection member 4.
  • the shape of the sealing material 5 is not particularly limited, and examples thereof include a sheet shape. This is because the sheet-like shape easily covers the front and back surfaces of the planar solar cell 2.
  • the material of the sealing material 5 is not particularly limited, but preferably has a property of transmitting light (transparency). Further, it is preferable that the material of the sealing material 5 has adhesiveness for bonding the solar battery cell 2, the light receiving side protection member 3, and the back side protection member 4.
  • Such materials include, for example, ethylene / vinyl acetate copolymer (EVA), ethylene / ⁇ -olefin copolymer, ethylene / vinyl acetate / triallyl isocyanurate (EVAT), polyvinyl butyrate (PVB), acrylic A light-transmitting resin such as a resin, a urethane resin, or a silicone resin may be used.
  • EVA ethylene / vinyl acetate copolymer
  • EVAT ethylene / vinyl acetate / triallyl isocyanurate
  • PVB polyvinyl butyrate
  • acrylic A light-transmitting resin such as a resin, a urethane resin, or a silicone resin may be used.
  • the light receiving side protection member 3 covers the surface (light receiving surface) of the solar cell device 1, that is, the solar cell 2, via the sealing material 5 to protect the solar cell 2.
  • the shape of the light receiving side protection member 3 is not particularly limited, but is preferably a plate shape or a sheet shape in that the light receiving side protection member 3 indirectly covers the planar light receiving surface.
  • the material of the light-receiving side protection member 3 is not particularly limited, but is preferably a material having a light-transmitting property and being resistant to ultraviolet light, like the sealing material 5, for example, glass or A transparent resin such as an acrylic resin or a polycarbonate resin is used.
  • the surface of the light-receiving side protection member 3 may be processed into an uneven shape, or may be covered with an antireflection coating layer. With such a configuration, the light-receiving side protection member 3 hardly reflects the received light, and can guide more light to the solar cell device 1.
  • the back side protection member 4 covers the back surface of the solar cell device 1, that is, the solar cell 2, via the sealing material 5 to protect the solar cell 2.
  • the shape of the back side protection member 4 is not particularly limited, but is preferably a plate shape or a sheet shape in the same manner as the light receiving side protection member 3 from the point of indirectly covering the planar back surface.
  • the material of the back side protection member 4 is not particularly limited, but a material that prevents invasion of water or the like (has a high water barrier) is preferable.
  • a resin film such as polyethylene terephthalate (PET), polyethylene (PE), an olefin-based resin, a fluorine-containing resin, or a silicone-containing resin, or a translucent plate-shaped resin member such as glass, polycarbonate, or acrylic;
  • PET polyethylene terephthalate
  • PE polyethylene
  • PE polyethylene
  • olefin-based resin a fluorine-containing resin
  • silicone-containing resin or a translucent plate-shaped resin member
  • a translucent plate-shaped resin member such as glass, polycarbonate, or acrylic
  • a laminate with a metal foil such as an aluminum foil may be used.
  • the solar cells 2 are connected in series by partially overlapping the ends of the solar cells 2.
  • one of the main surfaces for example, the light receiving surface
  • one end side for example, the left end side in FIG. 2 in the X direction of one of the adjacent solar cells 2, 2 in the X direction.
  • the portion is the other main surface side (opposite to the one main surface side) on the other end side (the other end side opposite to the above one end side, for example, the right end side in FIG. 2) in the X direction of the other solar cell 2
  • On the other main surface side for example, the back surface side).
  • a pad electrode portion 28p (described later) is formed on the back surface at one end of the solar cell 2, and a pad electrode portion 38p (described later) is formed on the back surface at the other end of the solar cell 2. .
  • the pad electrode portion 28p on the back surface at one end of one solar cell 2 is electrically connected to the pad electrode portion 38p on the back surface at the other end of the other solar cell 2 via the connection member 6. Is done.
  • the solar cells 2 since the plurality of solar cells 2 have a stacked structure in which the solar cells 2 are uniformly inclined in a certain direction, as if a tile is laid on a roof, the solar cells 2 are electrically connected in this manner.
  • the method is called a shingling method.
  • the plurality of solar cells 2 connected in a string form is referred to as a solar cell string (solar cell device). Note that, as described above, in the case where a part of the double-sided electrode solar cells is overlapped and connected using the shingling method, a conductive connection line is not required.
  • the singling system refers to a system in which some of the solar cells are overlapped and connected regardless of the presence or absence of a conductive connection line.
  • a region where the adjacent solar cells 2 and 2 overlap is referred to as an overlapping region Ro.
  • connection member 6 is disposed so as to bridge between the adjacent solar cells 2, 2 and electrically connects the adjacent solar cells 2, 2.
  • One end (for example, the right end in FIG. 2) of the connecting member 6 in the X direction is electrically connected to the pad electrode portion 28p on the back surface of one end (for example, the left end in 2) of one solar cell 2 in the X direction.
  • the other end (for example, the left end in FIG. 2) of the connection member 6 in the X direction is connected to the pad electrode portion 38p on the back surface side of the other solar cell 2 in the X direction (for example, the right end in FIG. 2). Electrically connected.
  • the connecting member 6 may be a ribbon wire made of a copper core material coated with a low melting point metal or solder, a conductive film formed of a thermosetting resin film containing low melting point metal particles or metal fine particles, or a plurality of conductive films.
  • a member formed of a knitted or woven fabric of a conductive element (see, for example, JP-A-2016-219799 or JP-A-2014-3161) is used.
  • the connection between the connection member 6 and the pad electrode portions 28p and 38p is made of a conductive film formed of a thermosetting resin film containing low melting metal particles or metal fine particles, a low melting metal fine particle or metal fine particles and a binder. And a conductive paste containing solder particles or a solder paste containing solder particles.
  • an insulating member 9 may be interposed between the adjacent solar cells 2 and 2. Details of the solar cell device 1 will be described later. Hereinafter, the solar cell 2 in the solar cell device 1 will be described.
  • FIG. 3 is a view of the solar cell 2 in the solar cell device 1 shown in FIGS. 1 and 2 as viewed from the back side.
  • the solar cell 2 shown in FIG. 3 is a rectangular back electrode type (back junction type) solar cell.
  • the photovoltaic cell 2 includes a semiconductor substrate 11 having two main surfaces, one main surface side (for example, a light receiving surface side) and the other main surface side (for example, a back surface side), and the other main surface of the semiconductor substrate 11.
  • the p-type region 7 has a so-called comb shape, and has a plurality of teeth 7f corresponding to comb teeth and a comb back part 7b corresponding to a support for the comb teeth.
  • the comb back portion 7b extends in the Y direction (second direction) along a side on one end side of the semiconductor substrate 11, and the tooth portion 7f extends from the comb back portion 7b in the X direction (first direction) crossing in the Y direction. Direction).
  • the n-type region 8 has a so-called comb shape, and has a plurality of tooth portions 8f corresponding to comb teeth and a comb back portion 8b corresponding to a support portion of the comb teeth.
  • the comb back portion 8b extends in the Y direction along the other end side opposite to the one end side portion of the semiconductor substrate 11, and the tooth portion 8f extends in the X direction from the comb back portion 8b.
  • the teeth 7f and the teeth 8f are provided alternately in the Y direction. Note that the p-type region 7 and the n-type region 8 may be formed in a stripe shape.
  • FIG. 4A is a cross-sectional view taken along line IVA-IVA of solar cell 2 shown in FIG. 3, and FIG. 4B is a cross-sectional view taken along line IVB-IVB of solar cell 2 shown in FIG.
  • the solar cell 2 includes a passivation layer 13 and an antireflection layer 15 that are sequentially stacked on the light receiving surface side, which is the main surface on the light receiving side, of the main surface of the semiconductor substrate 11.
  • the solar cells 2 are sequentially stacked on a part (mainly, the p-type region 7) on the back surface side, which is the main surface (the other main surface) of the main surface of the semiconductor substrate 11 opposite to the light receiving surface.
  • the solar cell 2 includes a passivation layer 33 and an n-type semiconductor layer (second conductivity type semiconductor layer) 35 sequentially laminated on another part (mainly, the n-type region 8) of the back surface side of the semiconductor substrate 11.
  • the semiconductor substrate 11 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon.
  • the semiconductor substrate 11 is, for example, an n-type semiconductor substrate in which a crystalline silicon material is doped with an n-type dopant. Examples of the n-type dopant include phosphorus (P).
  • the semiconductor substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light receiving surface side and generates photocarriers (electrons and holes). By using crystalline silicon as the material of the semiconductor substrate 11, a relatively high output (stable output regardless of illuminance) can be obtained even when the dark current is relatively small and the intensity of the incident light is low.
  • the semiconductor substrate 11 is one of divided large-sized semiconductor substrates of a predetermined size.
  • the predetermined size is a size determined by a predetermined size (for example, 6 inches) of the semiconductor wafer.
  • a predetermined size for example, 6 inches
  • the large semiconductor substrate is divided into four or more and ten or less in one predetermined direction.
  • the passivation layer 13 is formed on the light receiving surface side of the semiconductor substrate 11.
  • the passivation layer 23 is formed in the p-type region 7 on the back surface side of the semiconductor substrate 11.
  • the passivation layer 33 is formed in the n-type region 8 on the back surface side of the semiconductor substrate 11.
  • the passivation layers 13, 23, 33 are formed of, for example, an intrinsic (i-type) amorphous silicon material. The passivation layers 13, 23, and 33 suppress recombination of carriers generated in the semiconductor substrate 11, and increase the carrier collection efficiency.
  • An anti-reflection layer 15 may be formed on the passivation layer 13 on the light receiving surface side of the semiconductor substrate 11.
  • the antireflection layer 15 is formed of a material such as SiO, SiN, or SiON.
  • the p-type semiconductor layer 25 is formed on the passivation layer 23, that is, in the p-type region 7 on the back surface side of the semiconductor substrate 11. That is, as shown in FIG. 3 (and FIG. 1), the p-type semiconductor layer 25 has a so-called comb shape, and includes a plurality of teeth (branch pattern portions) 25f corresponding to the comb teeth and a support for the comb teeth. And a comb back portion (stem pattern portion) 25b to which one ends of a plurality of teeth portions 25f are connected.
  • the comb back part 25b extends in the Y direction along the side on one end side of the semiconductor substrate 11, and the tooth part 25f extends in the X direction from the comb back part 25b.
  • the n-type semiconductor layer 35 is formed on the passivation layer 33, that is, in the n-type region 8 on the back surface side of the semiconductor substrate 11. That is, as shown in FIG. 3 (and FIG. 1), the n-type semiconductor layer 35 has a so-called comb shape, and has a plurality of teeth (branch pattern portions) 35f corresponding to the comb teeth and a support for the comb teeth. And a comb back portion (stem pattern portion) 35b to which one ends of a plurality of tooth portions 35f are connected.
  • the comb back 35b extends in the Y direction along the other side of the semiconductor substrate 11, and the teeth 35f extend in the X direction from the comb back 35b.
  • the width of the comb back portions 25b and 35b is wider than the width of the tooth portions 25f and 35f. Thereby, the resistance loss of the comb back part 25b where the current from the plurality of teeth 25f is concentrated is reduced, and similarly, the resistance loss of the comb back part 35b where the current from the plurality of teeth 35f is concentrated is reduced. As a result, the output loss of the solar cell 2 due to the resistance of the electrode is reduced.
  • the width of the comb back portions 25b and 35b is the width in the direction (X direction) intersecting in the longitudinal direction (Y direction), and the width of the tooth portions 25f and 35f is the direction (X direction) intersecting in the longitudinal direction (X direction). (Y direction).
  • the p-type semiconductor layer 25 is formed of, for example, an amorphous silicon material.
  • the p-type semiconductor layer 25 is, for example, a p-type semiconductor layer in which an amorphous silicon material is doped with a p-type dopant.
  • Examples of the p-type dopant include boron (B).
  • the n-type semiconductor layer 35 is formed of, for example, an amorphous silicon material.
  • the n-type semiconductor layer 35 is, for example, an n-type semiconductor layer in which an amorphous silicon material is doped with an n-type dopant (for example, the above-mentioned phosphorus (P)).
  • P n-type dopant
  • the transparent electrode layer 27 is formed on the p-type semiconductor layer 25, that is, in the p-type region 7 on the back surface side of the semiconductor substrate 11.
  • the transparent electrode layer 37 is formed on the n-type semiconductor layer 35, that is, in the n-type region 8 on the back surface side of the semiconductor substrate 11.
  • the transparent electrode layers 27 and 37 are formed of a transparent conductive material. Examples of the transparent conductive material include ITO (Indium Tin Oxide: composite oxide of indium oxide and tin oxide).
  • the first metal electrode layer 28 is formed on the transparent electrode layer 27, that is, in the p-type region 7 on the back surface side of the semiconductor substrate 11. That is, as shown in FIG. 3 (and FIG. 1), the first metal electrode layer 28 has a so-called comb shape, and includes a plurality of finger electrode portions (branch pattern electrode portions) 28f corresponding to comb teeth and a comb. It has a bus bar electrode portion (stem pattern electrode portion) 28b to which one end of a plurality of finger electrode portions 28f is connected, which corresponds to a tooth support portion.
  • the bus bar electrode portion 28b corresponds to the back portion 25b of the p-type semiconductor layer 25, and extends in the Y direction along one side of the semiconductor substrate 11 in the X direction.
  • the finger electrode portion 28f corresponds to the tooth portion 25f of the p-type semiconductor layer 25, and extends in the X direction from the bus bar electrode portion 28b.
  • the second metal electrode layer 38 is formed on the transparent electrode layer 37, that is, in the n-type region 8 on the back surface side of the semiconductor substrate 11. That is, as shown in FIG. 3 (and FIG. 1), the second metal electrode layer 38 has a so-called comb shape, and includes a plurality of finger electrode portions (branch pattern electrode portions) 38f corresponding to comb teeth and a comb. It has a busbar electrode portion (stem pattern electrode portion) 38b to which one end of a plurality of finger electrode portions 38f is connected, which corresponds to a tooth support portion.
  • the bus bar electrode portion 38b corresponds to the comb back portion 35b of the n-type semiconductor layer 35, and extends in the Y direction along the side of the semiconductor substrate 11 on the other end side in the X direction.
  • the finger electrode portion 38f corresponds to the tooth portion 35f of the n-type semiconductor layer 35 and extends in the X direction from the bus bar electrode portion 38b.
  • the bus bar electrode portion 28b includes a pad electrode portion 28p for connecting one end of the connection member 6.
  • the second metal electrode layer 38 at least one of the finger electrode portions 38f includes a pad electrode portion 38p for connecting the other end of the connection member 6.
  • the first metal electrode layer 28 and the second metal electrode layer 38 are formed of a metal material.
  • the metal material for example, Cu, Ag, Al and alloys thereof are used.
  • the first metal electrode layer 28 and the second metal electrode layer 38 are formed of, for example, a conductive paste material containing a metal powder such as silver.
  • FIG. 5A is an enlarged cross-sectional view near the overlap region Ro of the solar cell device 1 shown in FIG. 2, and is a cross-sectional view corresponding to the line IVA-IVA shown in FIG.
  • FIG. 5B is an enlarged cross-sectional view near the overlap region Ro of the solar cell device 1 shown in FIG. 2, and is a cross-sectional view corresponding to the line IVB-IVB shown in FIG.
  • the specific region Ro1 is located on the other main surface side of one of the solar cells in the overlapping region Ro where the adjacent solar cells overlap. included.
  • the overlapping region Ro on one end side (the left end side in each drawing) of the solar battery cell 2 includes the specific region Ro1.
  • electrodes such as the bus bar electrode portion 28b and the pad electrode portion 28p of the first metal electrode layer 28 are formed in the specific region Ro1 on the long side of one end of the solar battery cell 2.
  • the electrode is not formed in the specific region means that the metal electrode layer functioning to extract the output current from the solar cell 2 is not formed. That is, a metal electrode layer that functions for purposes other than extracting the output current, such as marking, may be formed in the specific region.
  • the specific region is not limited to this, and it is sufficient that at least the first metal electrode layer 28 of the first electrode layers 29 is not formed in the specific region Ro1. That is, the transparent electrode layer 27 may be formed in the specific region Ro1.
  • the specific region Ro1 is not less than 5% and not more than 50% of the total length (length in the X direction) of the short side of the solar cell 2 from the long side on one end side in the X direction of the solar cell 2;
  • the area is 60% or more and 100% or less of the total length of the long sides of the solar cell 2 (the length in the Y direction) with respect to the center of the long side of the solar cell 2 (the center in the Y direction).
  • the specific region Ro1 has a first length L1 that is 60% or more and 100% or less of the entire length (length in the Y direction) of the long side of the solar cell 2 and the entire length of the short side of the solar cell 2
  • the second length L2 which is a length of 5% or more and 50% or less of (length in the X direction), is specified as a vertical and horizontal size.
  • the specific region Ro1 has a first length L1 having a vertical center at the center of the long side (the center in the Y direction) of the long side of the solar cell 2 and one end side of the solar cell 2 in the X direction.
  • the second length L2 is specified as the horizontal size from the long side of.
  • the specific region Ro1 where the metal electrode layer is not formed may be a single continuous region or a plurality of island-like (non-continuous) regions.
  • the size (for example, the total area) of the specific region Ro1 is 20% or more and 100% or less, preferably 50% or more and 95% or less, more preferably 70% or less, with respect to the size (for example, the total area) of the overlapping region Ro. % Or more and 90% or less.
  • the second length L2 of the specific region Ro1 that is, the length along the short side of the specific region Ro1 (the length in the X direction) is preferably 2 mm or more.
  • bus bar electrode portion 28b and the pad electrode portion 28p of the first metal electrode layer 28 are arranged in the overlapping region Ro excluding the specific region Ro1. Specifically, the bus bar electrode portion 28b and the pad electrode portion 28p of the first metal electrode layer 28 are formed adjacent to the specific region Ro1 in the overlapping region Ro on the back surface on one end side.
  • part or all of the comb spine 25b of the p-type semiconductor layer 25 is arranged in the overlap region Ro including the specific region Ro1.
  • the passivation layer 23 or the p-type semiconductor layer 25 may be formed on the back surface at one end of the solar battery cell 2.
  • one end of the solar cell 2 in one of the adjacent solar cells 2 and 2 in the X direction is on the other end side in the X direction of the other solar cell 2 (for example, the right end side in FIGS. 2, 5A and 5B).
  • a plurality of solar cells 2 are electrically connected using a shingling method so as to overlap a part of the back surface side.
  • the design of the solar cell device 1 and the solar cell module 100 is improved.
  • the solar cell 2 of the present embodiment no electrode is formed in the specific region Ro1 near the edge of the light-shielded one-side overlapping region Ro. Thereby, the output loss of the solar cell 2 due to the resistance of the electrode is reduced. In addition, when the solar cells 2 are connected using the ring-ring method, a decrease in the photoelectric conversion efficiency of the solar cells 2 due to dark current generated in the light-shielded one-side overlapping region Ro is reduced. You. As a result, the output of the solar cell 2 (and the solar cell device 1 and the solar cell module 100) is improved.
  • the photoelectric conversion efficiency is lower at the edge portion of the large-sized semiconductor substrate from the edge to 2 mm than at the inside.
  • the solar cell 2 of the present embodiment since the second length L2 of the specific region Ro1, that is, the length along the short side of the specific region Ro1 is 2 mm or more, the output of the solar cell 2 derived from the resistance of the electrode. The effect of reducing the loss and the effect of reducing the decrease in the photoelectric conversion efficiency of the solar battery cell 2 due to the dark current in the overlap region Ro are increased.
  • the transparent electrode layer 27 may be formed in the specific region Ro1. Even if the transparent electrode layer is formed in the specific region Ro1, the effect of suppressing the reduction of the photoelectric conversion efficiency due to the dark current in the overlapping region Ro can be expected to some extent. The effect of suppressing a decrease in photoelectric conversion efficiency due to dark current in the region Ro can be expected to be greater. Further, when the transparent electrode layer is not formed in the specific region Ro1, it is possible to suppress the deterioration of the passivation property when forming the transparent electrode layer. When the transparent electrode layer is not formed in the specific region Ro1, there is a trade-off between the suppression of the deterioration of the passivation property and the deterioration of the moisture resistance.
  • the warpage of the solar cell 2 caused by electrode formation is suppressed.
  • the amount of relatively expensive electrode material such as silver used is reduced, and the cost of the solar cell 2 can be reduced.
  • the semiconductor substrate 11 of the photovoltaic cell 2 one of a large-sized semiconductor substrate obtained by dividing a large-sized semiconductor substrate in one predetermined direction is used, but notches are provided at four corners of the large-sized semiconductor substrate.
  • the second length L2 of the specific region Ro1 that is, the length along the short side of the specific region Ro1 is 2 mm or more, in other words, the short side of the overlap region Ro. If the length along the line is 2 mm or more, the cutout portion is arranged below the adjacent solar cell 2 even if a solar cell 2 having cutouts at four corners is used. Thereby, the notch is not visually recognized from the light receiving surface side, and the design of the solar cell device 1 and the solar cell module 100 is improved.
  • the solar cell device 1 and the solar cell module 100 of the present embodiment since the back electrode type (back junction type) solar cell is used, the electrodes and wiring are not visually recognized, and the solar cell device 1 and the solar cell The design of the module 100 is further improved.
  • back electrode type back junction type
  • the comb back part 25 b of the p-type semiconductor layer 25 having a lower photoelectric conversion efficiency than the n-type semiconductor layer 35 is provided on one side of the solar cell 2.
  • a part or the whole of the comb back part 25b of the p-type semiconductor layer 25 is a part of the adjacent solar cells 2 and 2. It is arranged in the overlapping area Ro overlapping. That is, a part or all of the comb back part 25b of the p-type semiconductor layer 25 of one of the adjacent solar cells 2 and 2 is located below the other solar cell 2 in the overlap region Ro. Be placed.
  • the photoelectric conversion efficiency of the solar cell device 1 and the solar cell module 100 is improved, and the output is improved.
  • the first conductivity type region 7 is a p-type region
  • the first conductivity type semiconductor layer 25 is a p-type semiconductor layer
  • the second conductivity type region 8 is an n-type region
  • the form in which the two-conductivity type semiconductor layer 35 is an n-type semiconductor layer has been exemplified.
  • the present invention is not limited to this.
  • the first conductivity type region 7 is an n-type region
  • the first conductivity type semiconductor layer 25 is an n-type semiconductor layer
  • the second conductivity type region 8 is a p-type region.
  • the second conductivity type semiconductor layer 35 may be a p-type semiconductor layer.
  • the solar cell 2 having the n-type semiconductor substrate 11 in which the crystalline silicon material is doped with the n-type dopant has been exemplified.
  • the present invention is not limited to this, and can be applied to various solar cells such as a solar cell having a p-type semiconductor substrate in which a crystalline silicon material is doped with a p-type dopant.
  • the solar cell 2 using the crystalline silicon material is exemplified, but the present invention is not limited to this.
  • various materials such as gallium arsenide (GaAs) may be used as the material of the solar cell.
  • the heterojunction type solar cell 2 is illustrated as shown in FIGS. 4A and 4B.
  • the present invention is not limited to this, and can be applied to various solar cells such as homojunction solar cells.
  • the back electrode type (back junction type) solar cell 2 is illustrated.
  • the present invention is not limited to this, and can be applied to a double-sided electrode type solar cell.
  • the solar cell device 1 in which the insulating member 9 is interposed between the adjacent solar cells 2 and 2 is exemplified.
  • the insulating member 9 is provided between the adjacent solar cells 2 and 2. May not be interposed.
  • the solar cell module 100 has been described as an example including the single solar cell device 1, but the solar cell module 100 includes, for example, a plurality of solar cell devices 1 arranged in the Y direction. Is also good.

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un élément de batterie solaire avec lequel il est possible d'améliorer les propriétés de sortie et de conception d'un dispositif de batterie solaire ou d'un module de batterie solaire. Un élémentde batterie solaire 2 utilisé dans un dispositif de batterie solaire dans lequel une pluralité d'éléments de batterie solaire sont connectés électriquement dans un format shinglé de telle sorte qu'une partie d'un côté d'extrémité d'un élément de batterie solaire parmi des éléments de batterie solaire adjacents chevauche le fond d'une partie de l'autre côté d'extrémité de l'autre élément de batterie solaire, l'élément de batterie solaire comprenant un substrat semi-conducteur, une couche semi-conductrice électroconductrice 25 formée sur le côté de surface arrière du substrat semi-conducteur, et une couche d'électrode formée à partir d'une couche d'électrode transparente 27 et d'une couche d'électrode métallique 28. Une région spécifiée Ro1 est incluse sur l'autre côté de la surface principale d'un élément de batterie solaire dans une région de chevauchement Ro dans laquelle les éléments de batterie solaire qui sont adjacents se chevauchent. La région spécifiée Ro1 est de 20 à 100 % (inclus) de la région de chevauchement Ro, et au moins la couche d'électrode métallique 28 de la couche d'électrode n'est pas formée dans la région spécifiée Ro1.
PCT/JP2019/019528 2018-09-21 2019-05-16 Élément de batterie solaire, dispositif de batterie solaire et module de batterie solaire WO2020059204A1 (fr)

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JP2018-176970 2018-09-21
JP2018176970A JP2022002230A (ja) 2018-09-21 2018-09-21 太陽電池セル、太陽電池デバイスおよび太陽電池モジュール

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2019382301B2 (en) * 2019-05-28 2021-07-08 Jinko Solar Co., Ltd. Photovoltaic cell array and photovoltaic module

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242810B (zh) * 2022-02-24 2022-04-29 广东爱旭科技有限公司 背接触电池的电极结构、电池、组件以及电池系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153632A (ja) * 1995-11-30 1997-06-10 Kyocera Corp 光電変換装置
JPH09181343A (ja) * 1995-12-26 1997-07-11 Kyocera Corp 光電変換装置
WO2015152020A1 (fr) * 2014-03-31 2015-10-08 株式会社カネカ Module solaire et son procédé de fabrication
JP2015198142A (ja) * 2014-03-31 2015-11-09 株式会社カネカ 結晶シリコン太陽電池およびその製法、ならびに太陽電池モジュール
US20160233352A1 (en) * 2014-12-05 2016-08-11 Solarcity Corporation Photovoltaic electrode design with contact pads for cascaded application
WO2019087590A1 (fr) * 2017-10-30 2019-05-09 株式会社カネカ Cellule solaire de type à électrode à double face et module de cellule solaire

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153632A (ja) * 1995-11-30 1997-06-10 Kyocera Corp 光電変換装置
JPH09181343A (ja) * 1995-12-26 1997-07-11 Kyocera Corp 光電変換装置
WO2015152020A1 (fr) * 2014-03-31 2015-10-08 株式会社カネカ Module solaire et son procédé de fabrication
JP2015198142A (ja) * 2014-03-31 2015-11-09 株式会社カネカ 結晶シリコン太陽電池およびその製法、ならびに太陽電池モジュール
US20160233352A1 (en) * 2014-12-05 2016-08-11 Solarcity Corporation Photovoltaic electrode design with contact pads for cascaded application
WO2019087590A1 (fr) * 2017-10-30 2019-05-09 株式会社カネカ Cellule solaire de type à électrode à double face et module de cellule solaire

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2019382301B2 (en) * 2019-05-28 2021-07-08 Jinko Solar Co., Ltd. Photovoltaic cell array and photovoltaic module

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