WO2020055061A1 - Dispositif électroluminescent à semi-conducteur et son procédé de fabrication - Google Patents

Dispositif électroluminescent à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2020055061A1
WO2020055061A1 PCT/KR2019/011632 KR2019011632W WO2020055061A1 WO 2020055061 A1 WO2020055061 A1 WO 2020055061A1 KR 2019011632 W KR2019011632 W KR 2019011632W WO 2020055061 A1 WO2020055061 A1 WO 2020055061A1
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Prior art keywords
light emitting
semiconductor light
semiconductor layer
semiconductor
electrode
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PCT/KR2019/011632
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English (en)
Korean (ko)
Inventor
김태현
정연호
박준천
전수근
Original Assignee
주식회사 세미콘라이트
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Priority claimed from KR1020180107628A external-priority patent/KR102089499B1/ko
Priority claimed from KR1020180127230A external-priority patent/KR102100749B1/ko
Priority claimed from KR1020180148046A external-priority patent/KR102087728B1/ko
Priority claimed from KR1020180148044A external-priority patent/KR102134239B1/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2020055061A1 publication Critical patent/WO2020055061A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present disclosure (Disclosure) relates to a semiconductor light emitting device as a whole and a method for manufacturing the same, and more particularly, to a method for manufacturing a semiconductor light emitting device using a transfer plate containing an adhesive material and a semiconductor light emitting device.
  • the semiconductor light emitting device means a semiconductor optical device that generates light through recombination of electrons and holes, and examples include a group 3 nitride semiconductor light emitting device (LED, LD).
  • the group 3 nitride semiconductor is composed of a compound of Al (x) Ga (y) In (1-x-y) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • a GaAs-based semiconductor light-emitting device used for red light emission is exemplified.
  • FIG. 1 is a view showing an example of a vertical semiconductor light emitting device.
  • the semiconductor light emitting device includes a first semiconductor layer 30 having a first conductivity (eg, n-type GaN layer), an active layer 40 that generates light through recombination of electrons and holes (eg; INGaN / (In) GaN MQWs), A semiconductor light emitting unit in which a second semiconductor layer 50 (eg, a p-type GaN layer) having a second conductivity different from the first conductivity is sequentially formed, and a first formed on the side from which the growth substrate (eg, sapphire substrate) is removed
  • the electrode 60, the second semiconductor layer 50 while supplying current while supporting the semiconductor light emitting units 30, 40, 50, the support substrate 70, and the second electrode 80 formed on the support substrate 70 ).
  • the first electrode 60 is electrically connected to the outside using wire bonding.
  • the electrode 80 When the electrode 80 is electrically connected to the outside, it functions as a mounting surface.
  • a semiconductor light emitting device having one electrode 60 and 80 above and below the active layer 40 is referred to as a vertical semiconductor light emitting device.
  • the exterior to which the semiconductor light emitting device is electrically connected means a printed circuit board (PCB), a submount, a thin film transistor (TFT), or the like.
  • PCB printed circuit board
  • TFT thin film transistor
  • FIG. 2 is a view showing an example of a separation and transfer method of a micro semiconductor light emitting device described in Korean Patent Publication No. 2018-0092056.
  • the drawing symbols have been changed for convenience of explanation.
  • the present invention relates to a method for separating and transferring a micro semiconductor light emitting device having a size of 150 ⁇ m or less, preferably 100 ⁇ m or less, on a plane of the semiconductor light emitting elements.
  • the plurality of micro semiconductor light emitting devices 20 formed on the growth substrate 10 are adhered to the transfer plate 90. Thereafter, the growth substrate 10 is removed. Thereafter, the plurality of micro semiconductor light emitting elements 20 adhered to the transfer plate 90 are transferred to the outside 91.
  • the present invention arranges the micro-semiconductor light-emitting device 20 at a time in a state aligned with the transfer plate 90. This problem has been solved by allowing the transmission to be electrically connected to the external 91.
  • FIG 3 is a view showing a problem in the case of manufacturing a vertical type micro semiconductor light emitting device from the transfer plate.
  • An electrode 22 may be formed on the side where the growth substrate 10 of the semiconductor light emitting unit 21 is removed to manufacture the vertical type micro semiconductor light emitting device 20.
  • a photolithography process of forming the electrode 22 using photoresists 11 and PR may be used.
  • an adhesive material 92 for adhering a plurality of micro semiconductor light emitting portions 21 to the transfer plate 90 by an organic solvent used in a photolithography process for example, PR removal liquid, etc.
  • an organic solvent used in a photolithography process for example, PR removal liquid, etc.
  • the adhesiveness of the same adhesive material 92 is deteriorated, and a part of the plurality of micro-semiconductor light emitting parts 21 is separated from the transfer plate 90 or the arrangement is disturbed.
  • a method of manufacturing a vertical type semiconductor light emitting element while maintaining a bonding force between the transfer plate and the semiconductor light emitting unit and manufacturing according to the present disclosure It is intended to provide a vertical semiconductor light emitting device.
  • an attempt is made to solve a problem in which adhesive strength of an adhesive material is deteriorated by a high temperature process for ohmic contact.
  • a semiconductor light emitting device in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and A semiconductor light emitting unit positioned between the first semiconductor layer and the second semiconductor layer and including an active layer that generates light through recombination of electrons and holes; A first electrode electrically connected to the first semiconductor layer; And a second electrode electrically connected to the second semiconductor layer, wherein at least a portion of the side surface of the semiconductor light emitting unit is inclined such that a plane area of the first semiconductor layer is larger than that of the second semiconductor layer, and the first electrode and the second electrode.
  • a semiconductor light emitting unit is positioned between the electrodes, and the first electrode is provided with a semiconductor light emitting device covering 50% or more of the lower surface of the first semiconductor layer.
  • a semiconductor light emitting unit is formed by sequentially forming a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity.
  • Step S2 Dividing the semiconductor light emitting unit into a plurality of sections; wherein, the side surfaces of each semiconductor light emitting unit are divided into a plurality of semiconductor light emitting units inclined at least partially so that the first semiconductor layer has a larger plane area than the second semiconductor layer (S3); Forming a second electrode electrically connected to the second semiconductor layer of each semiconductor light emitting unit (S4); Bonding each semiconductor light emitting portion to the adhesive layer of the first transfer plate (S5); Removing the growth substrate (S6); And forming a first electrode electrically connected to the first semiconductor layer of each semiconductor light-emitting unit (S7); forming a first electrode such that the first electrode covers the lower surface of the first semiconductor layer by 50% or more. It provides a method for manufacturing a semiconductor light emitting device comprising a.
  • a semiconductor light emitting unit is positioned between the electrodes, and the first electrode covers more than 50% of the lower surface of the first semiconductor layer, and the thickness of the first electrode is provided by a semiconductor light emitting device having a thickness greater than that from the second electrode to the lower surface of the semiconductor light emitting unit do.
  • a semiconductor light emitting unit is formed by sequentially forming a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity.
  • Step S2 Dividing the semiconductor light emitting unit into a plurality of sections; wherein, the side surfaces of each semiconductor light emitting unit are divided into a plurality of semiconductor light emitting units inclined at least partially so that the first semiconductor layer has a larger plane area than the second semiconductor layer (S3); Forming a second electrode electrically connected to the second semiconductor layer of each semiconductor light emitting unit (S4); Bonding each semiconductor light emitting portion to the adhesive layer of the first transfer plate (S5); Removing the growth substrate (S6); And forming a first electrode electrically connected to the first semiconductor layer of each semiconductor light emitting unit (S7-1); wherein, the first electrode covers the lower surface of the first semiconductor layer by 50% or more, and the thickness of the first electrode
  • a method of manufacturing a semiconductor light emitting device including a; is provided; forming a first electrode larger than the thickness from the second electrode to the bottom surface of the semiconductor light emitting unit.
  • a non-transmissive growth substrate S1
  • a semiconductor light emitting unit is formed by sequentially forming a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity.
  • Step S2 Dividing the semiconductor light emitting unit into a plurality of portions; wherein, the lower surface of the first semiconductor layer of each semiconductor light emitting unit is larger than the upper surface of the second semiconductor layer and the semiconductor light emitting units are connected so that each semiconductor light emitting unit is connected by the partially etched first semiconductor layer.
  • Dividing into dogs (S3); Forming a second electrode electrically connected to the second semiconductor layer of each semiconductor light emitting unit (S4); Bonding each semiconductor light emitting portion to the adhesive layer of the first transfer plate (S5); Removing the growth substrate (S6); Removing a first semiconductor layer connecting each semiconductor light emitting unit (S7); And forming a first electrode electrically connected to the first semiconductor layer of each semiconductor light emitting unit (S8); wherein, forming the first electrode such that the first electrode covers the lower surface of the first semiconductor layer by 50% or more. It provides a method for manufacturing a semiconductor light emitting device comprising a.
  • a semiconductor light emitting device in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity And an active layer positioned between the first semiconductor layer and the second semiconductor layer to generate light through recombination of electrons and holes; A first electrode electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; And an auxiliary electrode formed on a side surface of the first semiconductor layer among side surfaces of the semiconductor light emitting unit, the auxiliary electrode having ohmic contact with the first semiconductor layer, wherein the lower surface of the first semiconductor layer is larger than the upper surface of the second semiconductor layer.
  • a semiconductor light emitting unit is positioned between the first electrode and the second electrode, and a semiconductor light emitting device is provided in which the first electrode and the auxiliary electrode are electrically connected.
  • a method of manufacturing a semiconductor light emitting device growth Preparing a substrate (S1); a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity
  • a semiconductor light emitting unit by sequentially forming (S2); Dividing the semiconductor light emitting unit into a plurality of steps, wherein, the first side of the first semiconductor layer of each semiconductor light emitting portion is larger than the upper surface of the second semiconductor layer, the first side of the side of each semiconductor light emitting portion having a different slope to the side of the first semiconductor layer And a step of dividing the semiconductor light emitting parts forming the second side surface into a plurality (S3); Forming a second electrode electrically connected to a second semiconductor layer of each semiconductor light emitting
  • FIG. 1 is a view showing an example of a vertical semiconductor light emitting device
  • FIG. 2 is a view showing an example of the separation and transfer method of the micro semiconductor light emitting device described in Korean Patent Publication No. 2018-0092056,
  • FIG. 3 is a view showing a problem when manufacturing a vertical type semiconductor light emitting device from the transfer plate
  • FIG. 4 is a view showing an example of a semiconductor light emitting device according to the present disclosure
  • FIG. 5 to 7 are views showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 8 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 9 to 11 are views showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • FIG. 12 is a view showing an example of a semiconductor light emitting device according to the present disclosure
  • FIG. 13 is a view showing various embodiments of the semiconductor light emitting device described in FIG. 12;
  • FIG. 14 to 16 are views showing an example of a method of manufacturing the semiconductor light emitting device described in FIG. 12,
  • 17 is a view showing another example of the method of manufacturing the semiconductor light emitting device of FIG. 12.
  • FIG. 4 is a view showing an example of a semiconductor light emitting device according to the present disclosure.
  • Figure 4 (a) is a perspective view
  • Figure 4 (b) is a cross-sectional view taken along AA '.
  • the semiconductor light emitting device 100 may include a semiconductor light emitting unit 110, a first electrode 120, and a second electrode 130.
  • the semiconductor light emitting unit 110 includes a first semiconductor layer 111 having a first conductivity, a second semiconductor layer 113 having a second conductivity different from the first conductivity, and the first semiconductor layer 111 and the second semiconductor layer Located between (113) may include an active layer 112 for generating light through the recombination of electrons and holes.
  • the side surface 114 of the semiconductor light emitting unit 110 is inclined such that the planar area S1 of the first semiconductor layer 111 is larger than the planar area S2 of the second semiconductor layer 113.
  • the semiconductor light emitting unit 110 of the semiconductor light emitting device 100 is grown through a vapor deposition method such as MOCVD on the growth substrate, and the first semiconductor layer 111, the active layer 112 and The second semiconductor layer 113 may be deposited in order.
  • the semiconductor light emitting unit 110 is an n-type semiconductor layer (Si-doped GaN) as the first semiconductor layer 111 and a p-type semiconductor layer (Mg-doped GaN) and an active layer as the second semiconductor layer 113 ( Example: InGaN / GaN multi-quantum well structure).
  • the first electrode 120 is electrically connected to the first semiconductor layer 111.
  • the first electrode 120 is formed by covering at least 50% of the lower surface 1111 of the first semiconductor layer 111.
  • the entire bottom surface 1111 of the first semiconductor layer 111 is formed.
  • another material that does not interfere with current flow such as a buffer layer, may be positioned between the lower surface 1111 and the first electrode 120 of the first semiconductor layer 111.
  • the thickness 121 of the first electrode 120 may be equal to or less than the thickness of H 115 from the second electrode 130 to the bottom surface 1111 of the first semiconductor layer 111.
  • the thickness 121 of the first electrode 120 may be equal to or smaller than the thickness of the semiconductor light emitting unit 110.
  • a support substrate having a thickness greater than that of the semiconductor light emitting unit is formed in a mounting surface direction electrically connected to the outside.
  • the support substrate may function as an electrode or may form a separate electrode as shown in FIG. 1.
  • the thickness of the support substrate is thicker than that of the semiconductor light emitting unit, when manufacturing a micro semiconductor light emitting device having a maximum width of 100 ⁇ m or less on a plane, there is a difficulty in manufacturing and handling the micro semiconductor light emitting device due to the thick thickness of the support substrate.
  • the second electrode 130 is electrically connected to the second semiconductor layer 113.
  • the ITO 150 may be positioned between the second electrode 130 and the second semiconductor layer 113 for current diffusion.
  • an insulating layer 140 may be formed on the side surface 114 of the semiconductor light emitting unit 110.
  • the insulating layer 140 may protect the semiconductor light emitting unit 110 from external contamination and prevent electrical shorts.
  • the first electrode 120 may be formed to the lower surface 141 of the insulating layer 140. Since the first electrode 120 functions as a mounting surface when it is electrically connected to the outside, the first electrode 120 is preferably formed wide.
  • the insulating layer 140 may cover not only the side surface 114 of the semiconductor light emitting portion, but also the top surface 1131 of the second semiconductor layer 113 and the top surface of the ITO 150 when the ITO 150 is present.
  • the perspective view of the semiconductor light emitting device 100 is shown in a trapezoidal shape.
  • the cross-sectional shape is a trapezoidal shape as in FIG. 4 (b)
  • the perspective view shape is not limited.
  • a semiconductor light emitting device having the shape shown in FIG. 4 (c) is also possible.
  • the side surface 114 of the semiconductor light emitting unit 110 is at least partially inclined such that the flat area S1 of the first semiconductor layer 111 is larger than the plane area S2 of the second semiconductor layer 113, the semiconductor light emitting unit
  • the cross-sectional shape of 110 is not limited to the trapezoidal shape shown in FIG. 4 (b).
  • the cross-sectional shape of the semiconductor light emitting unit 110 may be a shape as shown in FIG. 4 (d).
  • 5 to 7 are views showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • the growth substrate 200 is prepared (S1).
  • the growth substrate 200 may be made of a material such as sapphire (Al 2 O 3 ), SiC, Si, etc., and there is no particular limitation as long as semiconductor growth is possible.
  • a group III nitride semiconductor is used as the semiconductor, and a light-transmissive sapphire substrate is used as the growth substrate 200.
  • a semiconductor light emitting unit 220 eg, LED
  • the semiconductor light emitting unit 220 may include a first semiconductor layer 221 having a first conductivity (eg, an n-type semiconductor layer), an active layer 222, and a second semiconductor layer 223 (eg, a p-type semiconductor layer). .
  • the semiconductor light emitting unit 220 is not particularly limited as long as it uses a PN junction and emits light using recombination of electrons and holes.
  • the semiconductor light emitting unit 220 may be grown through a deposition method such as MOCVD.
  • a buffer layer or a seed layer 210 (eg, AlN) for stable growth of the semiconductor may be prepared on the growth substrate 200 before forming the semiconductor light emitting unit 220 (S2-1).
  • the buffer layer 210 may be made of a material such as GaN, AlGaN, AlN, CrN, and if the material capable of overcoming the difference between the lattice constant and the coefficient of thermal expansion of the growth substrate 20 and the semiconductor and growing a high-quality semiconductor is particularly limited There is no.
  • the semiconductor light emitting unit 220 is individually divided into a plurality of semiconductor light emitting units 220 through etching (eg, ICP etching) (S3).
  • etching eg, ICP etching
  • the side surfaces 224 of each of the semiconductor light emitting units 220 are at least such that the plane area of the first semiconductor layer 221 is larger than that of the second semiconductor layer 223.
  • Some etch is slanted.
  • a second electrode 230 electrically connected to the second semiconductor layer 223 is formed (S4).
  • the ITO 240 may be formed between the second semiconductor layer 223 and the second electrode 230 as necessary between steps S3 and S4, and the insulating layer 250 may be formed on the side 224 of the semiconductor light emitting unit 220. ) And the upper surface 225 (S3-1). Thereafter, each semiconductor light emitting unit 220 is adhered to the first transfer plate 260 (S5).
  • the first transfer plate 260 may be composed of a support plate 262 and an adhesive layer 261, and the support plate 262 is preferably formed of a material that is not easily bent. For example, it may be a glass or metal plate. However, the support plate 262 is not excluded from being formed of a material that is well bent, such as a tape.
  • At least one of the second electrode 230 or the insulating layer 250 is adhered to the adhesive layer 261 of the first transfer plate 260.
  • the growth substrate 200 is separated from the semiconductor light emitting unit 220 using a process (eg, Chemical Lift-Off (CLO), Laser Lift-Off (LLO)) (S6).
  • a metal 271 is deposited to form a first electrode 270 electrically connected to the first semiconductor layer 221 (S7). Since the first electrode 270 is formed only through metal deposition without using a photolithography process as in step S7 of the present disclosure, the problem described in FIG. 3 can be solved.
  • the side surface 224 of the semiconductor light emitting unit 220 has a second planar area of the first semiconductor layer 221. It is important that the cross-sectional shape of the semiconductor light emitting unit 220 is similar to a trapezoid by being partially inclined to be larger than the plane of the semiconductor layer 223. That is, as shown in S7 of FIG. 7, when the cross-sectional shape of the semiconductor light emitting unit 220 is similar to a trapezoid of a shape in which the first semiconductor layer 221 has a larger plane than the second semiconductor layer 223, the metal 271 is deposited.
  • the metal 271 covers most of the lower surface 2211 of the first semiconductor layer 221 (50% or more), the first electrode 270 is formed, but the metal 271 is deposited on the hatched portion 290.
  • the first electrode 270 formed on the lower surface 2211 of the first semiconductor layer 221 and the metal 271 formed on the first transfer plate 260 may be separated and formed. Therefore, it is possible to prevent metals from being connected to each other between adjacent semiconductor light emitting devices 280 when depositing the metal.
  • the cross-sectional shape of the semiconductor light emitting unit 220 can be varied as long as the planar area of the first semiconductor layer 221 satisfies a condition larger than the planar area of the second semiconductor layer 223, and various examples in FIG. 4 (d) It was described.
  • the thickness of the buffer layer 210 is about 30 nm or less, so there is no problem without removing it, and if necessary, it can be removed using plasma.
  • 7 illustrates a state in which the buffer layer 210 is removed. Thereafter, the semiconductor light emitting device 280 completed in the state aligned with the first transfer plate 260 is transferred to the outside 300 (S8). If necessary, although not illustrated, it may be transferred to the second transfer plate instead of the outside 300.
  • the manufacturing method according to the present disclosure is preferred for vertical micro semiconductor light emitting devices, but can also be applied to general vertical semiconductor light emitting devices larger than micro semiconductor light emitting devices.
  • the thickness 121 of the first electrode 120 may be less than or equal to the thickness h1 from the lower surface of the adhesive layer of the transfer plate to the lower surface 2211 of the semiconductor light emitting unit 220.
  • h1 is the same as H described in FIG. 4.
  • FIG. 8 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • the thickness 121 of the first electrode 120 is equal to or less than the thickness of H 115 from the second electrode 130 to the bottom surface 1111 of the first semiconductor layer 111.
  • the thickness of the first electrode 120 In some cases, 121 may need to be thicker than H 115 which is the thickness from the second electrode 130 to the bottom surface 1111 of the first semiconductor layer 111. Even in this case, it is preferable to manufacture by the methods described in Figs.
  • step S7 described in FIG. 7 the thickness 272 of the first electrode 270 is greater than the thickness 226 of the second electrode 230 to the lower surface 2211 of the semiconductor light emitting unit 220 as shown in FIG. 8. To be formed (S7-1).
  • the planar area of the first semiconductor layer 221 of the light emitting unit 220 is larger than the planar area of the second semiconductor layer 223, adjacent semiconductor light emitting devices (e.g., when depositing metal to form the first electrode 270)
  • the metal 271 deposited between 280 is not formed in the hatched portion 290 as shown in FIG. 8 and further, when metal deposition is performed to increase the thickness of the first electrode 270, the first electrode ( 270 functions as a mask, so that the metal 271 does not adhere to the first electrode 270 of the adjacent semiconductor light emitting device 280.
  • the planar area of the first electrode 270 increases as it moves away from the semiconductor light emitting unit 220 and acts as a mask, thereby acting as a mask, and thus, the metal 271 deposited between the semiconductor light emitting devices 280. Since the shape becomes sharper, the metal 271 does not adhere to the first electrode 270. Since the metal 271 does not adhere to the first electrode 270 of the adjacent semiconductor light emitting device 280, separation of the adjacent semiconductor light emitting device 280 is easy.
  • the thickness of the semiconductor light emitting unit 220 is largely described, and the thickness of the semiconductor light emitting unit 220 is approximately 50 ⁇ m or less. Except for step S7, the rest are substantially the same as the manufacturing methods described in Figs.
  • FIG. 9 to 11 are views showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • the growth substrate 200 is prepared (S1).
  • the growth substrate 200 may be made of a material such as sapphire (Al 2 O 3 ), SiC, Si, GaAs, and there is no particular limitation if semiconductor growth is possible.
  • a group III nitride semiconductor is used as the semiconductor, and a non-transmissive GaAs substrate is used as the growth substrate 200.
  • a semiconductor light emitting unit 210 eg, LED
  • the semiconductor light emitting unit 210 may be formed of a first semiconductor layer 211 having a first conductivity (eg, an n-type semiconductor layer), an active layer 212, and a second semiconductor layer 213 (eg, a p-type semiconductor layer). .
  • the semiconductor light emitting unit 210 is not particularly limited as long as it uses a PN junction and emits light using recombination of electrons and holes.
  • the semiconductor light emitting unit 210 may be grown through a deposition method such as MOCVD.
  • a buffer layer or a seed layer eg, AlN
  • the semiconductor light emitting unit 210 is individually divided into a plurality of semiconductor light emitting units 210 through etching (eg, ICP etching) (S3).
  • each semiconductor light emitting unit 220 when individualized into a plurality of semiconductor light emitting units 210, the side surface 214 of each semiconductor light emitting unit 220 is a second semiconductor layer 213 of the lower surface 2111 of the first semiconductor layer 211 of a dotted line Etched to be larger than the upper surface (2131) of the. However, only a portion of each individual semiconductor light-emitting portion 210 is etched to leave a thin first semiconductor layer 211, so that each individual semiconductor light-emitting portion 210 is connected to each other by the first semiconductor layer 211 left behind. Etch as much as possible. Thereafter, a second electrode 220 electrically connected to the second semiconductor layer 213 is formed (S4).
  • the ITO 230 may be formed between the second semiconductor layer 213 and the second electrode 220 as necessary between steps S3 and S4, and the insulating layer 240 may be formed on the side 214 of the semiconductor light emitting unit 210. ) And the upper surface 2131 (S3-1). Thereafter, each semiconductor light emitting unit 210 is adhered to the first transfer plate 250 (S5).
  • the first transfer plate 250 may be composed of a support plate 252 and an adhesive layer 251, and the support plate 252 is preferably formed of a material that is not easily bent. For example, it may be a glass or metal plate. However, it is not excluded that the support plate 252 is formed of a material that is well bent, such as a tape.
  • At least one of the second electrode 220 or the insulating layer 240 is adhered to the adhesive layer 251 of the first transfer plate 250. Thereafter, the growth substrate 200 is separated from the semiconductor light emitting unit 220 using a process (for example, CLO (Chemical Lift-Off)) (S6).
  • CLO Chemical Lift-Off
  • S6 a process for example, CLO (Chemical Lift-Off)
  • LLO laser lift-off
  • the first semiconductor layer 211 left between the semiconductor light emitting units 210 becomes a blocking film so that chemicals used in the CLO process do not flow or less flow into the adhesive layer 251 of the first transfer plate 250.
  • the problem described in Fig. 3 can be solved.
  • the first semiconductor layer 211 left between the semiconductor light emitting units 210 is removed (S7).
  • the thin first semiconductor layer 211 left between the frequency light emitting units 210 may be removed by a wet or dry etching method (S7).
  • a metal 261 is deposited to form a first electrode 260 electrically connected to the first semiconductor layer 211 (S8).
  • the problem described in FIG. 3 can be solved.
  • the lower surface 2111 of the first semiconductor layer 211 of the semiconductor light emitting unit 210 is the second semiconductor layer. It is important that the cross-sectional shape of the semiconductor light emitting portion 210 is similar to a trapezoid because it is larger than the upper surface 2131 of 213. That is, when the cross-sectional shape of the semiconductor light emitting portion 210 is similar to the trapezoid of the upper surface 2131 of the second semiconductor layer 213, as shown in S8 of FIG.
  • the metal 261 When the metal 261 is deposited, the metal 261 covers most (more than 50%) of the lower surface 2111 of the first semiconductor layer 211 to form the first electrode 260, but the hatched portion 280 Since the metal 261 is not deposited, the first electrode 260 formed on the lower surface 2111 of the first semiconductor layer 211 and the metal 261 formed on the first transfer plate 250 may be formed apart. Therefore, it is possible to prevent metals from being connected to each other between adjacent semiconductor light emitting devices 270 when depositing the metal.
  • the cross-sectional shape of the semiconductor light emitting unit 210 is variously possible as long as the lower surface 2111 of the first semiconductor layer 211 satisfies a condition that is greater than the upper surface 2131 of the second semiconductor layer 213.
  • the thickness of the buffer layer is about 30 nm or less, there is no problem without removing it, and if necessary, it can be removed using plasma.
  • 11 shows a state in which the buffer layer is removed.
  • the completed semiconductor light emitting device 270 aligned with the first transfer plate 250 is transferred to the outside 290 (S9). If necessary, although not illustrated, it may be transferred to the second transfer plate instead of the outside 290.
  • the manufacturing method according to the present disclosure is preferred for vertical micro semiconductor light emitting devices, but can also be applied to general vertical semiconductor light emitting devices larger than micro semiconductor light emitting devices. In addition, it is most preferable to apply to a vertical type semiconductor light emitting device that emits red light using a non-transmissive growth substrate.
  • FIG. 12 is a view showing an example of a semiconductor light emitting device according to the present disclosure.
  • Fig. 12 (a) is a perspective view
  • Fig. 12 (b) is a cross-sectional view taken along AA '.
  • the semiconductor light emitting device 100 may include a semiconductor light emitting unit 110, a first electrode 120, a second electrode 130, and an auxiliary electrode 140.
  • the semiconductor light emitting unit 110 includes a first semiconductor layer 111 having a first conductivity, a second semiconductor layer 113 having a second conductivity different from the first conductivity, and the first semiconductor layer 111 and the second semiconductor layer Located between (113) may include an active layer 112 for generating light through the recombination of electrons and holes.
  • the size of the lower surface 1111 of the first semiconductor layer 111 is larger than the size of the upper surface 1132 of the second semiconductor layer 113.
  • the side surface 114 of the semiconductor light emitting unit includes side surfaces 1112 and 1113 of the first semiconductor layer 111 and side surfaces 1131 of the second semiconductor layer 113.
  • the side surfaces 1112 and 1113 of the first semiconductor layer 111 are the first side surface 1112 and the side surface 1111 of the second semiconductor layer 113 and the bottom side 1111 of the first semiconductor layer 111. And a second side 1113 located between one side 1112.
  • the angle 1114 formed by the first side surface 1112 and the bottom surface 1111 of the first semiconductor layer 111 and the second side surface 1113 are parallel to the bottom surface 1111 of the first semiconductor layer 111.
  • the angle 1115 formed with the line 1116 may be different.
  • Various angles 1115 that the second side surface 1113 forms with the virtual line 1116 parallel to the lower surface 1111 of the first semiconductor layer 111 will be described again in FIG. 13.
  • the semiconductor light emitting unit 110 of the semiconductor light emitting device 100 is grown through a vapor deposition method such as MOCVD on a growth substrate, and the first semiconductor layer 111, the active layer 112 and The second semiconductor layer 113 may be deposited in order.
  • a vapor deposition method such as MOCVD
  • MOCVD metal-organic chemical vapor deposition
  • the first semiconductor layer 111, the active layer 112 and The second semiconductor layer 113 may be deposited in order.
  • an n-type semiconductor layer as the first semiconductor layer 111, a p-type semiconductor layer as the second semiconductor layer 113, and an AlGaInP-based active layer on the opaque GaAs as a growth substrate ( 112) which is described in Korean Patent Publication No. 2016-0145413.
  • the first electrode 120 is electrically connected to the first semiconductor layer 111.
  • the first electrode 120 is formed by covering at least 50% of the lower surface 1111 of the first semiconductor layer 111.
  • the entire bottom surface 1111 of the first semiconductor layer 111 is formed.
  • another material that does not interfere with current flow such as a buffer layer, may be positioned between the lower surface 1111 and the first electrode 120 of the first semiconductor layer 111.
  • the second electrode 130 is electrically connected to the second semiconductor layer 113.
  • the ITO 150 may be positioned between the second electrode 130 and the second semiconductor layer 113 for current diffusion.
  • the auxiliary electrode 140 may be formed on the first side 1112 and the second side 1113 of the first semiconductor layer 111 among the side 114 of the semiconductor light emitting unit 110.
  • the auxiliary electrode 140 formed on the first side 1112 and the auxiliary electrode 140 formed on the second side 1113 are connected so that the auxiliary electrode 140 formed on the first side 1112 is a semiconductor light emitting unit 110 ).
  • the driving voltage of the semiconductor light emitting device 100 may be lowered by being electrically connected to the first electrode 120 electrically connected to the outside.
  • the auxiliary electrode 140 formed on the first side surface 1112 of the auxiliary electrode 140 is electrically connected to the first electrode 120.
  • auxiliary electrode 140 and the first electrode 120 formed on the first side surface 1112 may be directly connected to each other as shown in FIG. 12 (b).
  • auxiliary electrode 140 is formed on the side surface 114 of the semiconductor light emitting unit 110 will be described with reference to FIG. 13.
  • an insulating layer 160 covering the side surface 114 and the auxiliary electrode 140 of the semiconductor light emitting unit 110 may be formed.
  • the insulating layer 160 may protect the semiconductor light emitting unit 110 from external contamination and prevent electrical shorts.
  • the first electrode 120 may be formed to the lower surface 161 of the insulating layer 160. Since the first electrode 120 functions as a mounting surface when it is electrically connected to the outside, the first electrode 120 is preferably formed wide.
  • the insulating layer 160 may cover the top surface 1132 of the second semiconductor layer 113 and the top surface of the ITO 150 when there is the ITO 150 as well as the side surface 114 of the semiconductor light emitting unit.
  • the first electrode 120 is formed by covering the lower surface 161 of the insulating layer 160, the lower surface 141 of the auxiliary electrode 140, and the lower surface 1111 of the first semiconductor layer 111, the insulating layer ( It is preferable that the lower surface 161 of the 160, the lower surface 141 of the auxiliary electrode 140, and the lower surface 1111 of the first semiconductor layer 111 form a flat surface with no height difference.
  • the perspective view of the semiconductor light emitting device 100 is shown in a trapezoidal shape, but when the cross-sectional shape is a trapezoidal shape as in FIG. 12 (b), the perspective view shape is not limited.
  • a semiconductor light emitting device having a shape as shown in FIG. 12 (c) is also possible.
  • the cross-sectional shape of the semiconductor light emitting unit 110 is a trapezoidal shape as shown in FIG. 12 (b). It is not limited.
  • Various cross-sectional shapes of the semiconductor light emitting unit 110 will be described with reference to FIG. 13.
  • FIG. 13 is a view showing various embodiments of the semiconductor light emitting device described in FIG. 12. For convenience of description, only the semiconductor light emitting unit and the auxiliary electrode are illustrated.
  • the angle 1115 formed by the second side surface 1113 of the first semiconductor layer 111 and the virtual line 1116 parallel to the lower surface 1111 of the first semiconductor layer 111 is The second side surface 1113 may not be inclined at 0 degrees. As illustrated in FIG. 13B, an angle 1114 formed by the first side surface 1112 of the first semiconductor layer 111 and the lower surface 1111 may be 90 degrees. Alternatively, as shown in FIG. 13 (c), the angle 1115 of the second side surface 1113 of the first semiconductor layer 111 forms with the virtual line 1116 parallel to the bottom surface 1111 of the first semiconductor layer 111. It may be greater than 90 degrees.
  • the second side 1111 is not inclined as shown in FIG. 13 (a) or FIG. 13 (c) ),
  • the angle 1115 formed by the second side surface 1113 of the first semiconductor layer 111 and the virtual line 1116 parallel to the lower surface 1111 of the first semiconductor layer 111 is greater than 90 degrees. It is preferred.
  • 13 (d) to 13 (f) show the shape of the auxiliary electrode 140 formed on the first side 1112 when the first side 1112 of the first semiconductor layer 111 is unfolded.
  • the upper side is the direction of the second side surface 1113 of the first semiconductor layer 111
  • the lower side is the direction of the lower surface 1111.
  • 13 (d) shows that the auxiliary electrode 140 is formed on the entire first side surface 1112.
  • 13 (e) shows the auxiliary electrode 140 formed at regular intervals on the first side surface 1112.
  • 13 (f) shows the auxiliary electrode 140 formed in a mesh shape on the first side surface 1112.
  • the auxiliary electrode 140 is formed as shown in FIG. 13 (d) in that the ohmic contact is widely formed to lower the driving voltage and the current is well spread, and the point where light is absorbed by the electrode and the first semiconductor layer ( It is also preferable that the auxiliary electrode 140 is formed as shown in FIG. 13 (e) in that more light can exit through the side surfaces 1112 and 1113 of 111).
  • the auxiliary electrode 140 is formed as shown in FIG.
  • 13 (f) in that light can go out more through the side surfaces 1112 and 1113 of the first semiconductor layer 111 while reducing the driving voltage by widening the ohmic contact. It is most preferred. 13 (a) to 13 (f), those skilled in the art that can be easily changed within the scope of the present disclosure may be included in the scope of the present disclosure.
  • FIG. 14 to 16 are views showing an example of a method of manufacturing the semiconductor light emitting device described in FIG. 12.
  • the growth substrate 200 is prepared (S1).
  • the growth substrate 200 prepares an opaque substrate (eg, GaAs) to manufacture a semiconductor light emitting device that emits red light.
  • a Group 3 nitride semiconductor is used as the semiconductor
  • a GaAs substrate is used as the growth substrate 200.
  • a semiconductor light emitting unit 220 eg, LED
  • the semiconductor light emitting unit 220 may include a first semiconductor layer 221 having a first conductivity (eg, an n-type semiconductor layer), an active layer 222, and a second semiconductor layer 223 (eg, a p-type semiconductor layer). .
  • the semiconductor light emitting unit 220 is not particularly limited as long as it uses a PN junction and emits light using recombination of electrons and holes.
  • the semiconductor light emitting unit 220 may be grown through a deposition method such as MOCVD.
  • a buffer layer or a seed layer 210 (eg, AlN) for stable growth of the semiconductor may be prepared on the growth substrate 200 before forming the semiconductor light emitting unit 220 (S2-1).
  • the buffer layer 210 may be made of a material such as GaN, AlGaN, AlN, CrN, and if the material capable of overcoming the difference between the lattice constant and the coefficient of thermal expansion of the growth substrate 200 and the semiconductor and growing a high-quality semiconductor is particularly limited There is no.
  • the semiconductor light emitting unit 220 is individually divided into a plurality of semiconductor light emitting units 220 through etching (eg, ICP etching) (S3).
  • etching eg, ICP etching
  • the lower surface 2211 of the first semiconductor layer 221 of each semiconductor light emitting unit 220 is larger than the upper surface 2231 of the second semiconductor layer 223. It is etched and individualized to form first side surfaces 2212 and second side surfaces 2213 of different inclinations on the side surfaces of the first semiconductor layer 221 among the side surfaces 224 of each semiconductor light emitting unit.
  • a second electrode 230 electrically connected to the second semiconductor layer 223 and an auxiliary electrode 240 making ohmic contact with the first semiconductor layer 221 are formed (S4).
  • the process may be performed at a high temperature of 300 degrees or more. The problem described in FIG. 3 does not occur because the high temperature process for the ohmic contact proceeds before using the transfer plate 270.
  • an ITO 250 may be formed between the second semiconductor layer 223 and the second electrode 230 at an appropriate step by a process known to those skilled in the art, and the side surface 224 of the semiconductor light emitting unit 220 may be formed.
  • the first transfer plate 270 may be composed of a support plate 272 and an adhesive layer 271, and the support plate 272 is preferably formed of a material that is not easily bent. For example, it may be a glass or metal plate. However, the support plate 272 is not excluded from being formed of a material that is well bent, such as a tape. At least one of the second electrode 230 or the insulating layer 260 is bonded to the adhesive layer 271 of the first transfer plate 270.
  • the growth substrate 200 is separated from the semiconductor light emitting unit 220 using a process (for example, CLO (Chemical Lift-Off)) (S6). Since the growth substrate 200 is opaque, it is not preferable to use LLO (Laser Lift-Off). When using a transparent substrate (eg, sapphire substrate), LLO (Laser Lift-Off) may be used. Thereafter, a metal 281 is deposited to form a first electrode 280 electrically connected to the first semiconductor layer 221 (S7). As in step S7 of the present disclosure, the problem described in FIG. 3 can be solved because the first electrode 280 is formed only through metal deposition without using a photolithography process.
  • CLO Chemical Lift-Off
  • the lower surface 2211 of the first semiconductor layer 221 of the semiconductor light emitting unit 220 is the second semiconductor layer. It is important that the cross-sectional shape of the semiconductor light emitting portion 220 is similar to a trapezoid because it is larger than the upper surface 2231 of 223. That is, when the cross-sectional shape of the semiconductor light emitting unit 220 is similar to the trapezoid of the upper surface 2221 of the second semiconductor layer 223, as shown in S7 of FIG.
  • the metal 281 When the metal 281 is deposited, the metal 281 covers most (50% or more) of the lower surface 2211 of the first semiconductor layer 221 to form the first electrode 280, but the hatched portion 300 Since the metal 281 is not deposited, the first electrode 280 formed on the lower surface 2211 of the first semiconductor layer 221 and the metal 281 formed on the first transfer plate 270 may be formed apart. Therefore, it is possible to prevent metals from being connected to each other between adjacent semiconductor light emitting devices 290 when depositing the metal.
  • the cross-sectional shape of the semiconductor light emitting unit 220 can be varied as long as the lower surface 2211 of the first semiconductor layer 221 satisfies a condition larger than the upper surface 2231 of the second semiconductor layer 223. Various examples have been described.
  • the thickness of the buffer layer 210 is about 30 nm or less, there is no problem without removing it, and if necessary, it can be removed using plasma.
  • 16 illustrates a state in which the buffer layer 210 is removed. Thereafter, the completed semiconductor light emitting device 290 is aligned with the first transfer plate 270 to the outside 310 (S8). If necessary, although not illustrated, it may be transferred to the second transfer plate instead of the outside 310.
  • the manufacturing method according to the present disclosure is preferred for a vertical type micro semiconductor light emitting device that emits red light, but can also be applied to a vertical type semiconductor light emitting device that emits general red light larger than the micro semiconductor light emitting device.
  • FIG. 17 is a view showing another example of a method of manufacturing the semiconductor light emitting device described in FIG. 12.
  • step S6 when the CLO (Chemical Lift-Off) is used as a process of separating the growth substrate 200 from the semiconductor light emitting unit 220, the adhesive layer is used by the chemical used to remove the growth substrate 200 The adhesive strength of 271 may be deteriorated.
  • a thin first semiconductor layer 221 is left between the semiconductor light emitting units 220, so that each individualized semiconductor light emitting unit 220 is left with a first semiconductor layer ( 221) are etched to be connected to each other (S3-2). Subsequent processes are substantially the same as those described in FIGS. 15 to 16.
  • the first transfer plate 270 is not affected by the chemicals used in the CLO process.
  • the adhesive strength of the adhesive layer 271 can be prevented by the first semiconductor layer 221 left between the semiconductor light emitting units 220. That is, the first semiconductor layer 221 left between the semiconductor light emitting units 220 becomes a blocking film so that chemicals used in the CLO process do not flow or less flow into the adhesive layer 271 of the first transfer plate 270.
  • the problem that the adhesive strength of the adhesive layer 271 is poor can be solved.
  • an electron and a hole are located between a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a first semiconductor layer and a second semiconductor layer.
  • a semiconductor light emitting unit including an active layer that generates light through recombination of; A first electrode electrically connected to the first semiconductor layer; And a second electrode electrically connected to the second semiconductor layer, wherein at least a portion of the side surface of the semiconductor light emitting unit is inclined such that a plane area of the first semiconductor layer is larger than that of the second semiconductor layer, and the first electrode and the second electrode.
  • a semiconductor light emitting unit is positioned between the electrodes, and the first electrode covers a lower surface of the first semiconductor layer by 50% or more.
  • the first electrode is a semiconductor light emitting device that entirely covers the bottom surface of the first semiconductor layer.
  • the first semiconductor layer is an n-type semiconductor layer, a semiconductor light emitting device.
  • a semiconductor light emitting device in which an insulating layer covers a side surface of the semiconductor light emitting unit.
  • a semiconductor light emitting device in which the first electrode covers at least a portion of the lower surface of the insulating layer.
  • a semiconductor light emitting device having a thickness of the first electrode equal to or less than H.
  • a semiconductor light emitting device having a maximum width of a semiconductor light emitting portion on a plane of 100 ⁇ m or less.
  • a method for manufacturing a semiconductor light emitting device comprising: preparing a growth substrate (S1); A semiconductor light emitting unit is formed by sequentially forming a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity.
  • Step S2 Dividing the semiconductor light emitting unit into a plurality of sections; wherein, the side surfaces of each semiconductor light emitting unit are divided into a plurality of semiconductor light emitting units inclined at least partially so that the first semiconductor layer has a larger plane area than the second semiconductor layer (S3); Forming a second electrode electrically connected to the second semiconductor layer of each semiconductor light emitting unit (S4); Bonding each semiconductor light emitting portion to the adhesive layer of the first transfer plate (S5); Removing the growth substrate (S6); And forming a first electrode electrically connected to the first semiconductor layer of each semiconductor light-emitting unit (S7); forming a first electrode such that the first electrode covers the lower surface of the first semiconductor layer by 50% or more.
  • Method of manufacturing a semiconductor light-emitting device comprising a.
  • a method of manufacturing a semiconductor light-emitting device comprising; step S3 and step S4 covering the side of the semiconductor light emitting portion between the insulating layer.
  • step S7 bonding the first electrode of each semiconductor light emitting device to the second transfer plate and dropping each semiconductor light emitting element from the first transfer plate.
  • a semiconductor light emitting element a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an electron and a hole located between the first semiconductor layer and the second semiconductor layer
  • a semiconductor light emitting unit including an active layer that generates light through recombination of; A first electrode electrically connected to the first semiconductor layer; And a second electrode electrically connected to the second semiconductor layer, wherein at least a portion of the side surface of the semiconductor light emitting unit is inclined such that a plane area of the first semiconductor layer is larger than that of the second semiconductor layer, and the first electrode and the second electrode.
  • a semiconductor light emitting unit is positioned between the electrodes, the first electrode covering more than 50% of the lower surface of the first semiconductor layer, and the thickness of the first electrode is greater than the thickness from the second electrode to the lower surface of the semiconductor light emitting unit.
  • a semiconductor light emitting device that increases as the plane of the first electrode moves away from the semiconductor light emitting unit.
  • a method for manufacturing a semiconductor light emitting device comprising: preparing a growth substrate (S1); A semiconductor light emitting unit is formed by sequentially forming a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity.
  • Step S2 Dividing the semiconductor light emitting unit into a plurality of sections; wherein, the side surfaces of each semiconductor light emitting unit are divided into a plurality of semiconductor light emitting units inclined at least partially so that the first semiconductor layer has a larger plane area than the second semiconductor layer (S3); Forming a second electrode electrically connected to the second semiconductor layer of each semiconductor light emitting unit (S4); Bonding each semiconductor light emitting portion to the adhesive layer of the first transfer plate (S5); Removing the growth substrate (S6); And forming a first electrode electrically connected to the first semiconductor layer of each semiconductor light emitting unit (S7-1); wherein, the first electrode covers the lower surface of the first semiconductor layer by 50% or more and the thickness of the first electrode is And forming a first electrode larger than a thickness from the second electrode to a bottom surface of the semiconductor light emitting unit.
  • a method of manufacturing a semiconductor light emitting device comprising: preparing a non-transmissive growth substrate (S1); A semiconductor light emitting unit is formed by sequentially forming a first semiconductor layer having a first conductivity on the growth substrate, an active layer generating light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity. Step S2; Dividing the semiconductor light emitting units into a plurality; dividing the semiconductor light emitting units into a plurality so that the lower surface of the first semiconductor layer of each semiconductor light emitting unit is larger than the upper surface of the second semiconductor layer and each semiconductor light emitting unit is connected by the first semiconductor layer.
  • Step S6 is a method of manufacturing a semiconductor light emitting device using a chemical lift-off (CLO) process.
  • (21) A method of manufacturing a semiconductor light emitting device that removes some of the etched first semiconductor layers connecting the respective semiconductor light emitting units in step S7 by one of wet and dry etching.
  • a semiconductor light emitting unit including an active layer that generates light through recombination of; A first electrode electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; And an auxiliary electrode formed on a side surface of the first semiconductor layer among side surfaces of the semiconductor light emitting unit, the auxiliary electrode having ohmic contact with the first semiconductor layer, wherein the lower surface of the first semiconductor layer is larger than the upper surface of the second semiconductor layer.
  • a semiconductor light emitting unit is positioned between the first electrode and the second electrode, and the first electrode and the auxiliary electrode are electrically connected.
  • the side surface of the first semiconductor layer includes a first side surface connected to the bottom surface of the first semiconductor layer, and a second side surface located between the side surface of the second semiconductor layer and the first side surface of the first semiconductor layer, and the first semiconductor layer.
  • An angle in which the second side of the layer forms an imaginary line parallel to the bottom surface of the first semiconductor layer is different from the angle formed by the bottom surface of the first semiconductor layer and the first side.
  • a semiconductor light emitting device having an angle of 0 degrees between a second side surface of the first semiconductor layer and an imaginary line parallel to the bottom surface of the first semiconductor layer.
  • a semiconductor light emitting device having an angle formed by a second side surface of the first semiconductor layer and an imaginary line parallel to the bottom surface of the first semiconductor layer is greater than 90 degrees.
  • the auxiliary electrode is formed on the first side and the second side of the first semiconductor layer, and the auxiliary electrode formed on the first side and the auxiliary electrode formed on the second side are connected, and the auxiliary electrode formed on the first side is eliminated.
  • a semiconductor light emitting device electrically connected to one electrode.
  • a semiconductor light emitting device in which an insulating layer covers a side surface and an auxiliary electrode of the semiconductor light emitting unit.
  • a method of manufacturing a semiconductor light-emitting device comprising; step S3 and step S5 covering the side and the auxiliary electrode of the semiconductor light emitting portion between the insulating layer.
  • a vertical type micro semiconductor light emitting device having a maximum width of 100 ⁇ m or less on a plane can be obtained.
  • a vertical semiconductor light emitting device having a thickness of 50 ⁇ m or less can be obtained.
  • a vertical type semiconductor light emitting device can be easily manufactured using an adhesive transfer plate made of an adhesive material such as silicon and epoxy.
  • a vertical semiconductor light emitting device including a first electrode having a thickness greater than the thickness of the semiconductor light emitting unit can be easily manufactured using an adhesive transfer plate made of an adhesive material such as silicon and epoxy.

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Abstract

La présente invention concerne un dispositif électroluminescent à semi-conducteur et son procédé de fabrication, le dispositif électroluminescent à semi-conducteur comprenant : une partie électroluminescente à semi-conducteur comprenant une première couche semi-conductrice ayant une première conductivité, une seconde couche semi-conductrice ayant une seconde conductivité différente de la première conductivité, et une couche active positionnée entre la première couche semi-conductrice et la seconde couche semi-conductrice et générant de la lumière par recombinaison d'électrons et de trous ; une première électrode connectée électriquement à la première couche semi-conductrice ; et une seconde électrode connectée électriquement à la seconde couche semi-conductrice, au moins une partie d'une surface latérale de la partie électroluminescente à semi-conducteur est inclinée de façon à permettre à la zone plane de la première couche semi-conductrice d'être plus grande que la zone plane de la seconde couche semi-conductrice, la partie électroluminescente à semi-conducteur est positionnée entre la première électrode et la seconde électrode, et la première électrode recouvre 50 % ou plus de la surface inférieure de la première couche semi-conductrice.
PCT/KR2019/011632 2018-09-10 2019-09-09 Dispositif électroluminescent à semi-conducteur et son procédé de fabrication WO2020055061A1 (fr)

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KR20070014691A (ko) * 2005-07-29 2007-02-01 엘지전자 주식회사 수직형 발광소자 제조방법
KR20140053530A (ko) * 2012-10-26 2014-05-08 삼성전자주식회사 반도체 발광소자 및 그 제조 방법
KR20170083253A (ko) * 2016-01-08 2017-07-18 엘지이노텍 주식회사 발광 소자
KR20170104829A (ko) * 2016-03-08 2017-09-18 엘지이노텍 주식회사 반도체 소자, 표시패널, 표시장치 및 표시패널 제조방법

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