WO2020047888A1 - 显示面板及其制作方法 - Google Patents
显示面板及其制作方法 Download PDFInfo
- Publication number
- WO2020047888A1 WO2020047888A1 PCT/CN2018/105222 CN2018105222W WO2020047888A1 WO 2020047888 A1 WO2020047888 A1 WO 2020047888A1 CN 2018105222 W CN2018105222 W CN 2018105222W WO 2020047888 A1 WO2020047888 A1 WO 2020047888A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting diode
- diode unit
- electrode
- opening
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 115
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- UKQJDWBNQNAJHB-UHFFFAOYSA-N 2-hydroxyethyl formate Chemical compound OCCOC=O UKQJDWBNQNAJHB-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Definitions
- the present application relates to the field of display, and in particular, to a display panel and a manufacturing method thereof.
- Micro LED technology refers to a micro-sized LED array integrated on a substrate with high density.
- micro light emitting diode displays have many advantages over LCD and OLED displays, such as lower power consumption, higher color gamut, and faster corresponding rates, but their technical difficulties are greater than LCD or OLED.
- a micro light emitting diode In the process of manufacturing a micro light emitting diode, a micro light emitting diode is first formed on a donor wafer, and then the micro light emitting diode is transferred to a receiving substrate, such as a display screen; and because a large number of micro light emitting diodes are required, From the master to the target display substrate, this precise transfer is considered to be one of the main production bottlenecks of micro-LEDs at present, which leads to major problems in the efficiency and yield of micro-LEDs transferred using this method. Reduce the yield of micro-LED display panels.
- the present application provides a display panel and a manufacturing method thereof, so as to solve the technical problem of low yield of a conventional micro-LED display panel.
- This application proposes a method for manufacturing a display panel, which includes:
- the pixel definition layer includes at least one first opening
- a thin film encapsulation layer is formed on the second electrode layer.
- the step of disposing a micro light emitting diode unit in the first opening includes:
- the first solution is removed by a predetermined process, so that the micro light emitting diode unit is connected to the first electrode.
- the step of disposing the micro light emitting diode unit on the first solution and suspending the micro light emitting diode unit on the first solution includes:
- the second solution is dropped into the first opening by using a specific nozzle in an inkjet printer, so that the micro light emitting diode unit is suspended on the first solution.
- the micro light emitting diode unit includes a diode unit, a first medium, and a second medium;
- the first medium is disposed on a surface of the diode unit
- the second medium is disposed on a surface of the first medium near one side of the array substrate;
- the first medium and the first solution repel each other, and the second medium and the first solution attract each other.
- the diode unit includes a first electrode, a light-emitting unit provided on the first electrode, and a second electrode provided on the light-emitting unit;
- the second medium is disposed near the first electrode.
- the diode unit further includes a second opening and a third opening, where the second opening exposes part of the first electrode, and the third opening exposes part of the second electrode;
- the first electrode layer is electrically connected to the first electrode through the second opening
- the second electrode layer is electrically connected to the second electrode through the third opening.
- the method before the first opening is filled with the first solution, the method further includes the following steps:
- the first metal layer includes at least one of indium, tin, gallium, lead, indium tin alloy, and indium gallium alloy.
- the step of removing the first solution by using a predetermined process and connecting the micro light emitting diode unit to the first electrode includes:
- the second medium is removed and the first metal layer is in a molten state, so that the first metal layer is connected to the first electrode through the second opening.
- the method before forming the second electrode layer on the micro light emitting diode unit, the method further includes the following steps:
- a thickness of the flat layer is not greater than a thickness of the micro light emitting diode unit
- the ashing process is used to remove the flat layer on the micro light emitting diode unit.
- This application also proposes a method for manufacturing a display panel, which includes:
- the pixel definition layer includes at least one first opening
- a thin film encapsulation layer is formed on the second electrode layer.
- the step of disposing the micro light emitting diode unit on the first solution and suspending the micro light emitting diode unit on the first solution includes:
- the second solution is dropped into the first opening by using a specific nozzle in an inkjet printer, so that the micro light emitting diode unit is suspended on the first solution.
- the micro light emitting diode unit includes a diode unit, a first medium, and a second medium;
- the first medium is disposed on a surface of the diode unit
- the second medium is disposed on a surface of the first medium near one side of the array substrate;
- the first medium and the first solution repel each other, and the second medium and the first solution attract each other.
- the diode unit includes a first electrode, a light-emitting unit provided on the first electrode, and a second electrode provided on the light-emitting unit;
- the second medium is disposed near the first electrode.
- the diode unit further includes a second opening and a third opening, where the second opening exposes part of the first electrode, and the third opening exposes part of the second electrode;
- the first electrode layer is electrically connected to the first electrode through the second opening
- the second electrode layer is electrically connected to the second electrode through the third opening.
- the method before the first opening is filled with the first solution, the method further includes the following steps:
- the first metal layer includes at least one of indium, tin, gallium, lead, indium tin alloy, and indium gallium alloy.
- the step of removing the first solution by using a predetermined process and connecting the micro light emitting diode unit to the first electrode includes:
- the second medium is removed and the first metal layer is brought into a molten state, so that the first metal layer is connected to the first electrode through the second opening.
- the method before forming the second electrode layer on the micro light emitting diode unit, the method further includes the following steps:
- a thickness of the flat layer is not greater than a thickness of the micro light emitting diode unit
- the ashing process is used to remove the flat layer on the micro light emitting diode unit.
- the present invention also provides a display panel, wherein the display panel is manufactured by using the manufacturing method of the display panel.
- a specific nozzle in an inkjet printer is used to drop a solution mixed with a micro light emitting diode unit onto an array substrate to complete the transfer of the micro light emitting diode unit from a mother board to the array substrate, thereby reducing the micro light emitting diodes. Difficulty of transfer improves the yield of the micro-LED display panel.
- FIG. 1 is a flowchart of a manufacturing method of a display panel according to an embodiment of the present application
- 2A to 2J are process flow charts of a method for manufacturing a display panel according to an embodiment of the present application.
- FIG. 3 is another step diagram of a method for manufacturing a display panel according to an embodiment of the present application.
- FIG. 4 is a structural diagram of a micro light emitting diode unit in a display panel according to an embodiment of the present application.
- FIG. 1 is a flowchart of a manufacturing method of a display panel according to an embodiment of the present application.
- S10. Provide an array substrate.
- the array substrate includes a substrate 10 and a thin film transistor layer 20 on the substrate 10.
- a material of the substrate 10 may be one of a glass substrate, a quartz substrate, and a resin substrate.
- the substrate 10 may be, but is not limited to, a flexible substrate, and the flexible substrate may be an organic polymer.
- Organic polymers can be polyimide (PI), polyamide (PA), polycarbonate (PC), polyphenylene ether sulfone (PES), polyethylene terephthalate (PET), polynaphthalene One of ethylene glycol formate (PEN), polymethyl methacrylate (PMMA), and cycloolefin copolymer (COC).
- the thin film transistor layer 20 includes an ESL (etch stop layer type), a BCE (back channel etch type), or a Top-gate (top gate thin film transistor type) structure, which is not specifically limited.
- the top-gate thin film transistor type includes a buffer layer, an active layer, a gate insulating layer, a gate layer, an inter-insulating layer, a source-drain layer, and a flat layer.
- a first electrode layer and a pixel definition layer are formed on the array substrate.
- a via hole is formed on the flat layer to expose a part of the source and drain layers.
- a metal layer is deposited on the flat layer, coated with a photoresist layer, exposed with a mask (not shown), and subjected to a patterning process of development and etching to form a first electrode layer as shown in FIG. 2B 30.
- the first electrode layer 30 is a transparent metal layer.
- the first electrode layer 30 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or zinc aluminum oxide (AZO). At least one of.
- a layer of the pixel definition layer 40 is coated on the first electrode layer 30, and the pixel definition layer 40 includes at least one first opening 401.
- Each of the first openings 401 is provided with a micro light emitting diode unit, that is, the micro light emitting diode units of different colors are separated by the pixel definition layer 40 to prevent crosstalk of colors.
- a micro light emitting diode unit is disposed in the first opening.
- This step is mainly to transfer the micro light emitting diode unit from the mother board to the target substrate, that is, to the pattern shown in FIG. 2B.
- FIG. 3 is another step diagram of a method for manufacturing a display panel according to an embodiment of the present application.
- a first metal layer is formed on the first electrode layer.
- a first metal layer 50 is first formed on the first electrode layer 30.
- the first metal layer 50 is located in the first opening 401 and covers the first electrode layer 30.
- the first metal layer 50 includes at least one of indium, tin, gallium, lead, indium tin alloy, and indium gallium alloy.
- the first solution 402 is mainly filled in the first opening 401, but the thickness of the first solution 402 is not higher than the thickness of the pixel definition layer 40.
- the micro-light-emitting diode unit is disposed on the first solution, so that the micro-light-emitting diode unit is suspended on the first solution.
- the second solution is preferably ink.
- the ink mixed with the micro light emitting diode unit is filled in the inkjet printer, the ink is dripped into the first opening 401 using a specific nozzle, and the ink dripped into the first opening 401 is ensured Including one said micro light emitting diode unit.
- FIG. 4 is a structural diagram of a micro light emitting diode unit in a display panel according to an embodiment of the present application.
- the micro light emitting diode unit 60 includes a diode unit, a first medium 601 and a second medium 602.
- the first medium 601 is disposed on a surface of the diode unit, and the second medium 602 is disposed on a surface of the first medium 601 near a side of the array substrate.
- the first medium 601 and the first solution 402 repel each other, and the second medium 602 and the first solution 402 attract each other.
- the diode unit includes a first electrode 603, a light emitting unit 604 disposed on the first electrode 603, and a second electrode 605 disposed on the light emitting unit. That is, when the first electrode 603 and the second electrode 605 respectively apply positive and negative charges, a complete circuit is formed so that the light emitting unit 604 emits light.
- the second medium 602 is disposed near the first electrode 603, that is, is disposed at the bottom end of the micro-light emitting diode unit 60, so that the diode unit and the first electrode layer 30 form a certain spacing.
- the diode unit further includes a second opening 606 and a third opening 607.
- the second opening 606 exposes part of the first electrode 603, and the third opening 607 exposes part of the second electrode 605.
- the second opening 606 is used for connecting the first electrode layer 30 to the first electrode 603, and the third opening 607 is used for connecting the second electrode layer to the second electrode 605.
- the first medium 601 and the second medium 602 need to be disposed on the surface of the diode unit. There are no specific restrictions on the first medium 601 and the second medium 602, and it is ensured that the first medium 601 and the first solution 402 are mutually exclusive, and the second medium 602 and the first solution 402 are mutually exclusive Just attract.
- the micro light emitting diode unit 60 when the micro light emitting diode unit 60 enters the first opening 401, the micro light emitting diode unit 60 is insoluble because the first medium 601 and the first solution 402 mutually repel each other. In the first solution 402, the second medium 602 and the first solution 402 attract each other so that the micro light emitting diode unit 60 is positioned at a certain position of the first opening 401. Therefore, using the characteristics between the first medium 601, the second medium 602, and the first solution 402, the micro-light emitting diode unit 60 performs automatic alignment in the first opening 401.
- This step mainly adopts a first baking process, that is, preliminary heating to remove the first solution 402 in the first opening 401, so that the micro light emitting diode unit 60 and the first metal layer 50 contact.
- This step mainly adopts a second baking process, that is, continuous heating, removing the second medium 602, and bringing the first metal layer 50 into a molten state, so that the first metal layer 50 passes through
- the second opening 606 is connected to the first electrode 603.
- the heating temperature of the second baking process is higher than the heating temperature of the first baking process.
- a flat layer is formed in the first opening.
- a flat layer 70 is deposited in the first opening 401.
- the material of the flat layer 70 in this step is the same as that of the flat layer in the thin film transistor layer 20.
- the flat layer 70 covers the first electrode layer 30.
- the thickness of the flat layer 70 is not greater than the thickness of the micro light emitting diode unit 60.
- the material of the flat layer 70 may be an insulating material.
- the micro light emitting diode unit 60 when the flat layer 70 is formed, the micro light emitting diode unit 60 may be covered by the flat layer 70, which affects the connection between the micro light emitting diode unit 60 and the second electrode layer. Therefore, the ashing process is used to remove the flat layer 70 on the micro light emitting diode unit 60.
- a second electrode layer is formed on the micro light emitting diode unit.
- a second electrode layer 80 is formed on the micro light emitting diode unit 60.
- the second electrode layer 80 is a non-transparent material, and light generated by the light-emitting layer is projected to the substrate 10 through the second electrode layer 80.
- the material of the second electrode layer 80 may be silver (Ag), aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), or gold. (Au), or a combination of one or more of palladium (Pd).
- a thin film encapsulation layer is formed on the second electrode layer.
- a thin film encapsulation layer 90 is formed on the second electrode layer.
- the thin film encapsulation layer 90 mainly plays a role of blocking water and oxygen, and prevents the organic light emitting layer from being eroded by external moisture.
- the thin film encapsulation layer 90 is mainly formed by staggering at least one organic layer and at least one inorganic layer. Generally, an organic layer is located in the middle of the thin film encapsulation layer 90, and an inorganic layer is located on both sides of the thin film encapsulation layer 90, and the organic layer is wrapped in the middle.
- the present application also proposes a display panel, which is made by using the manufacturing method of the display panel.
- This application also proposes an electronic device that includes the display panel.
- the operating principle of the electronic device and the operating principle of the electronic device are similar to the operating principle of the display panel.
- For a working principle and a working principle of the electronic device reference may be made to a working principle of the display panel, and details are not described herein.
- the electronic device includes, but is not limited to, a mobile phone, a tablet computer, a computer monitor, a game console, a television, a display screen, a wearable device, and other household appliances or household appliances with a display function.
- the present application provides a display panel and a manufacturing method thereof.
- the manufacturing method includes: providing an array substrate; and forming a first electrode layer and a pixel definition layer on the array substrate.
- the pixel definition layer includes at least one first Opening; using a specific nozzle in an inkjet printer, dropping a solution mixed with a micro light emitting diode unit into the first opening, so that the micro light emitting diode unit is formed in the first opening;
- a second electrode layer is formed on the diode unit; an encapsulation layer is formed on the second electrode layer.
- a specific nozzle in an inkjet printer is used to drop a solution mixed with a micro light emitting diode unit onto an array substrate to complete the transfer of the micro light emitting diode unit from a mother board to the array substrate, thereby reducing the micro light emitting diodes. Difficulty of transfer improves the yield of the micro-LED display panel.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本申请提出了一种显示面板及其制作方法，所述制作方法通过利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。
Description
本申请涉及显示领域，特别涉及一种显示面板及其制作方法。
微发光二极管（Micro LED）技术是指在衬底上以高密度集成的微小尺寸的LED阵列。作为新兴显示技术，微发光二极管显示相较于LCD、OLED显示有较多优势，如较低的功耗，较高的色域，较快的相应速率等，但其技术难度大于LCD或OLED。
在制造微发光二极管的过程中，首先在施主晶圆上形成微发光二极管，接着将微发光二极管转移到接受衬底上，接受衬底例如是显示屏；而由于需要把巨量的微发光二极管从母版转移到目标显示基板，因此，此项精确转移被认为是目前微发光二极管主要的制作瓶颈之一，导致使用这种方法转移微发光二极管的效率和良率均有较大的问题，大大降低微发光二极管显示面板的良率。
本申请基于此技术问题，提出了下列技术方案。
本申请提供一种显示面板及其制作方法，以解决现有制作微发光二极管显示面板良率较低的技术问题。
本申请提出了一种显示面板的制作方法，其包括：
提供一阵列基板；
在所述阵列基板上形成第一电极层及像素定义层，
所述像素定义层包括至少一第一开口；
在所述第一开口内设置微发光二极管单元；
在所述微发光二极管单元上形成第二电极层；
在所述第二电极层上形成薄膜封装层。
在本申请的制作方法中，在所述第一开口内设置微发光二极管单元的步骤包括：
在所述第一开口内填充第一溶液；
在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；
利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接。
在本申请的制作方法中，在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上的步骤，包括：
在母板上制作所述微发光二极管单元；
将所述微发光二极管单元均匀地分散在第二溶液中；
利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在所述第一溶液上。
在本申请的制作方法中，所述微发光二极管单元包括二极管单元、第一介质及第二介质；
所述第一介质设置于所述二极管单元的表面；
所述第二介质设置于靠近所述阵列基板一侧的所述第一介质的表面；
其中，所述第一介质与所述第一溶液互相排斥，所述第二介质与所述第一溶液互相吸引。
在本申请的制作方法中，所述二极管单元包括第一电极、设置于所述第一电极上的发光单元、及设置于所述发光单元上的第二电极；
所述第二介质靠近所述第一电极设置。
在本申请的制作方法中，所述二极管单元还包括第二开口和第三开口，所述第二开口使部分所述第一电极裸露，所述第三开口使部分所述第二电极裸露；
其中，所述第一电极层通过所述第二开口与所述第一电极电连接，所述第二电极层通过所述第三开口与所述第二电极电连接。
在本申请的制作方法中，在所述第一开口内填充第一溶液之前，还包括步骤：
在所述第一电极层上形成第一金属层；
所述第一金属层包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。
在本申请的制作方法中，利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接的步骤包括：
利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；
利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。
在本申请的制作方法中，在所述微发光二极管单元上形成第二电极层之前，还包括步骤：
在所述第一开口内形成平坦层，
所述平坦层的厚度不大于所述微发光二极管单元的厚度；
利用灰化工艺去除所述微发光二极管单元上所述平坦层。
本申请还提出了一种显示面板的制作方法，其中，包括：
提供一阵列基板；
在所述阵列基板上形成第一电极层及像素定义层，
所述像素定义层包括至少一第一开口；
在所述第一开口内填充第一溶液；
在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；
利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接；
在所述微发光二极管单元上形成第二电极层；
在所述第二电极层上形成薄膜封装层。
在本申请的制作方法中，在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上的步骤，包括：
在母板上制作所述微发光二极管单元；
将所述微发光二极管单元均匀地分散在第二溶液中；
利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在所述第一溶液上。
在本申请的制作方法中，所述微发光二极管单元包括二极管单元、第一介质及第二介质；
所述第一介质设置于所述二极管单元的表面；
所述第二介质设置于靠近所述阵列基板一侧的所述第一介质的表面；
其中，所述第一介质与所述第一溶液互相排斥，所述第二介质与所述第一溶液互相吸引。
在本申请的制作方法中，所述二极管单元包括第一电极、设置于所述第一电极上的发光单元、及设置于所述发光单元上的第二电极；
所述第二介质靠近所述第一电极设置。
在本申请的制作方法中，所述二极管单元还包括第二开口和第三开口，所述第二开口使部分所述第一电极裸露，所述第三开口使部分所述第二电极裸露；
其中，所述第一电极层通过所述第二开口与所述第一电极电连接，所述第二电极层通过所述第三开口与所述第二电极电连接。
在本申请的制作方法中，在所述第一开口内填充第一溶液之前，还包括步骤：
在所述第一电极层上形成第一金属层；
所述第一金属层包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。
在本申请的制作方法中，利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接的步骤包括：
利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；
利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。
在本申请的制作方法中，在所述微发光二极管单元上形成第二电极层之前，还包括步骤：
在所述第一开口内形成平坦层，
所述平坦层的厚度不大于所述微发光二极管单元的厚度；
利用灰化工艺去除所述微发光二极管单元上所述平坦层。
本发明还提出了一种显示面板，其中，所述显示面板采用所述显示面板的制作方法制成。
本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例所提供一种显示面板的制作方法步骤图；
图2A~2J为本申请实施例所提供一种显示面板的制作方法的工艺流程图；
图3为本申请实施例所提供一种显示面板的制作方法另一步骤图；
图4为本申请实施例所提供一种显示面板中微发光二极管单元的结构图。
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本申请实施例所提供一种显示面板的制作方法步骤图。
包括步骤：
S10、提供一阵列基板。
请参阅图2A，在本步骤中，所述阵列基板包括基板10及位于所述基板10上的薄膜晶体管层20。
所述基板10的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。
在一种实施例中，所述基板10可以为但不限定于柔性基板，所述柔性基板可以为有机聚合物。有机聚合物可以是聚酰亚胺(PI)、聚酰胺(PA)、聚碳酸酯(PC)、聚苯醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、环烯烃共聚物(COC)中的一种。
所述薄膜晶体管层20包括ESL（蚀刻阻挡层型）、BCE（背沟道蚀刻型）或Top-gate（顶栅薄膜晶体管型）结构，具体没有限制。例如，请参阅图2A，顶栅薄膜晶体管型包括：缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极层以及平坦层。
S20、在所述阵列基板上形成第一电极层及像素定义层。
在本步骤中，首先，在所述平坦层上形成过孔，使部分所述源漏极层裸露。其次，在所述平坦层上沉积一金属层，经光阻层涂覆，采用掩模板（未画出）曝光，经显影以及蚀刻的构图工艺处理后，形成图2B所示的第一电极层30。
当所述显示面板为底发射型发光器件时，所述第一电极层30为透明的金属层。所述第一电极层30可以为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。
最后，在所述第一电极层30涂覆一层所述像素定义层40，所述像素定义层40包括至少一第一开口401。每一所述第一开口401内用于设置微发光二极管单元，即通过所述像素定义层40将不同颜色的所述微发光二极管单元隔开，防止颜色的串扰。
S30、在所述第一开口内设置微发光二极管单元。
本步骤主要为将所述微发光二极管单元从母板上转移到目标基板中，即转移到图2B所示的图案中。
请参阅图3，图3为本申请实施例所提供一种显示面板的制作方法另一步骤图。
包括步骤：
S301、在所述第一电极层上形成第一金属层。
请参阅图2C，本步骤首先在所述第一电极层30上形成第一金属层50，所述第一金属层50位于所述第一开口401内，将所述第一电极层30覆盖。
在一种实施例中，所述第一金属层50包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。
S302、在所述第一开口内填充第一溶液。
请参阅图2D，本步骤主要在所述第一开口401内填充第一溶液402，但所述第一溶液402的厚度不高于所述像素定义层40的厚度。
S303、在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上。
在本步骤中，具体包括：
S3031、在母板上制作所述微发光二极管单元；
S3032、将所述微发光二极管单元均匀地分散在第二溶液中；
S3033、利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在第一溶液上。
在一种实施例中，所述第二溶液优选为墨水。将混有所述微发光二极管单元的墨水填充在所述喷墨打印机中，使用特定的喷头将墨水滴入所述第一开口401中，并确保滴入所述第一开口401中的墨水中包括一个所述微发光二极管单元。
请参阅图4，图4为本申请实施例所提供一种显示面板中微发光二极管单元的结构图。
所述微发光二极管单元60包括二极管单元、第一介质601及第二介质602。
在一种实施例中，所述第一介质601设置于所述二极管单元的表面，所述第二介质602设置于靠近所述阵列基板一侧的所述第一介质601的表面。所述第一介质601与所述第一溶液402互相排斥，所述第二介质602与所述第一溶液402互相吸引。
在一种实施例中，所述二极管单元包括第一电极603、设置于所述第一电极603上的发光单元604、及设置于所述发光单元上的第二电极605。即当所述第一电极603与所述第二电极605分别施加正负电荷时，形成完整的回路使得是发光单元604发光。
请参阅图4，所述第二介质602靠近所述第一电极603设置，即设置于所述微发光二极管单元60的底端，使得所述二极管单元与所述第一电极层30形成一定的间距。
在一种实施例中，所述二极管单元还包括第二开口606和第三开口607。所述第二开口606使部分所述第一电极603裸露，所述第三开口607使部分所述第二电极605裸露。所述第二开口606用于所述第一电极层30与所述第一电极603连接，所述第三开口607用于所述第二电极层与所述第二电极605连接。
在一种实施例中，请参阅图2E，在母板上进行所述微发光二极管单元60的制作时，需要在二极管单元表面设置所述第一介质601和所述第二介质602。所述第一介质601和所述第二介质602没有具体的限制，保证所述第一介质601与所述第一溶液402互相排斥、及所述第二介质602与所述第一溶液402互相吸引即可。
在一种实施例中，当所述微发光二极管单元60进入所述第一开口401时，由于所述第一介质601与所述第一溶液402互相排斥使得所述微发光二极管单元60不溶于所述第一溶液402中，而所述第二介质602与所述第一溶液402互相吸引使得所述微发光二极管单元60定位于所述第一开口401的某一位置。因此，利用所述第一介质601、所述第二介质602与所述第一溶液402之间的特性，所述微发光二极管单元60在所述第一开口401内进行自动对位。
S304、利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接。
本步骤中，具体包括：
S3041、利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触。
请参阅图2F，本步骤主要为采取第一烘烤工艺，即初步加热，去除所述第一开口401内的第一溶液402，使所述微发光二极管单元60与所述第一金属层50接触。
S3042、利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。
请参阅图2G，本步骤主要为采取第二烘烤工艺，即持续加热，去除所述第二介质602及使所述第一金属层50呈熔融状态，使所述第一金属层50通过所述第二开口606与所述第一电极603连接。所述第二烘烤工艺的加热温度高于所述第一烘烤工艺的加热温度。
S305、在所述第一开口内形成平坦层。
请参阅图2H，在所述第一开口401内沉积一层平坦层70。本步骤中的平坦层70与薄膜晶体管层20中的平坦层材料相同。所述平坦层70覆盖所述第一电极层30。所述平坦层70的厚度不大于所述微发光二极管单元60的厚度。所述平坦层70的材料可以为绝缘材料。
在一种实施例中，由于形成所述平坦层70时，所述微发光二极管单元60上可能被所述平坦层70覆盖，影响所述微发光二极管单元60与第二电极层的连接。因此，利用灰化工艺去除所述微发光二极管单元60上所述平坦层70。
S40、在所述微发光二极管单元上形成第二电极层。
请参阅图2I，在所述微发光二极管单元60上形成第二电极层80。当所述显示面板为底发射型发光器件时，所述第二电极层80为非透明材料，使发光层产生的光线经过所述第二电极层80向所述基板10方向投射。
在一种实施例中，所述第二电极层80的的材料可以为银（Ag）、铝（Al）、铬（Cr）、钼（Mo）、钨（W）、钛（Ti）、金（Au）、钯（Pd）中的一种或一种以上的组合物。
S50、在所述第二电极层上形成薄膜封装层。
请参阅图2J，在所述第二电极层上形成一薄膜封装层90。所述薄膜封装层90主要起阻水阻氧的作用，防止外部水汽对有机发光层的侵蚀，所述薄膜封装层90主要由至少一有机层与至少一无机层交错层叠而成。通常有机层位于所述薄膜封装层90的中间，无机层位于所述薄膜封装层90的两侧，将有机层包裹在中间。
本申请还提出了一种显示面板，所述显示面板采用上述显示面板的制作方法制成。
本申请还提出了一种电子装置，所述电子装置包括所述显示面板，所述电子装置的工作原理、所述电子装置的工作原理与所述显示面板的工作原理相似，所述电子装置的工作原理以及所述电子装置的工作原理具体可以参考所述显示面板的工作原理，这里不做赘述。
所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。
本申请提出了一种显示面板及其制作方法，所述制作方法包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入所述第一开口内，使所述微发光二极管单元形成于所述第一开口内；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成封装层。本申请利用喷墨打印机中的特定喷头，将混合有微发光二极管单元的溶液滴入阵列基板上，完成所述微发光二极管单元从母板到阵列基板的转移，降低了所述微发光二极管的转移难度，提高了微发光二极管显示面板的良率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。
Claims (18)
- 一种显示面板的制作方法，其中，包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；在所述第一开口内设置微发光二极管单元；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成薄膜封装层。
- 根据权利要求1所述的制作方法，其中，在所述第一开口内设置微发光二极管单元的步骤包括：在所述第一开口内填充第一溶液；在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接。
- 根据权利要求2所述的制作方法，其中，在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上的步骤，包括：在母板上制作所述微发光二极管单元；将所述微发光二极管单元均匀地分散在第二溶液中；利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在所述第一溶液上。
- 根据权利要求2所述的制作方法，其中，所述微发光二极管单元包括二极管单元、第一介质及第二介质；所述第一介质设置于所述二极管单元的表面；所述第二介质设置于靠近所述阵列基板一侧的所述第一介质的表面；其中，所述第一介质与所述第一溶液互相排斥，所述第二介质与所述第一溶液互相吸引。
- 根据权利要求4所述的制作方法，其中，所述二极管单元包括第一电极、设置于所述第一电极上的发光单元、及设置于所述发光单元上的第二电极；所述第二介质靠近所述第一电极设置。
- 根据权利要求5所述的制作方法，其中，所述二极管单元还包括第二开口和第三开口，所述第二开口使部分所述第一电极裸露，所述第三开口使部分所述第二电极裸露；其中，所述第一电极层通过所述第二开口与所述第一电极电连接，所述第二电极层通过所述第三开口与所述第二电极电连接。
- 根据权利要求2所述的制作方法，其中，在所述第一开口内填充第一溶液之前，还包括步骤：在所述第一电极层上形成第一金属层；所述第一金属层包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。
- 根据权利要求7所述的制作方法，其中，利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接的步骤包括：利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。
- 根据权利要求1所述的制作方法，其中，在所述微发光二极管单元上形成第二电极层之前，还包括步骤：在所述第一开口内形成平坦层，所述平坦层的厚度不大于所述微发光二极管单元的厚度；利用灰化工艺去除所述微发光二极管单元上所述平坦层。
- 一种显示面板的制作方法，其中，包括：提供一阵列基板；在所述阵列基板上形成第一电极层及像素定义层，所述像素定义层包括至少一第一开口；在所述第一开口内填充第一溶液；在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上；利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接；在所述微发光二极管单元上形成第二电极层；在所述第二电极层上形成薄膜封装层。
- 根据权利要求10所述的制作方法，其中，在所述第一溶液上设置所述微发光二极管单元，使所述微发光二极管单元悬浮在所述第一溶液上的步骤，包括：在母板上制作所述微发光二极管单元；将所述微发光二极管单元均匀地分散在第二溶液中；利用喷墨打印机中的特定喷头，将所述第二溶液滴入所述第一开口内，使所述微发光二极管单元悬浮在所述第一溶液上。
- 根据权利要求10所述的制作方法，其中，所述微发光二极管单元包括二极管单元、第一介质及第二介质；所述第一介质设置于所述二极管单元的表面；所述第二介质设置于靠近所述阵列基板一侧的所述第一介质的表面；其中，所述第一介质与所述第一溶液互相排斥，所述第二介质与所述第一溶液互相吸引。
- 根据权利要求12所述的制作方法，其中，所述二极管单元包括第一电极、设置于所述第一电极上的发光单元、及设置于所述发光单元上的第二电极；所述第二介质靠近所述第一电极设置。
- 根据权利要求13所述的制作方法，其中，所述二极管单元还包括第二开口和第三开口，所述第二开口使部分所述第一电极裸露，所述第三开口使部分所述第二电极裸露；其中，所述第一电极层通过所述第二开口与所述第一电极电连接，所述第二电极层通过所述第三开口与所述第二电极电连接。
- 根据权利要求10所述的制作方法，其中，在所述第一开口内填充第一溶液之前，还包括步骤：在所述第一电极层上形成第一金属层；所述第一金属层包括铟、锡、镓、铅、铟锡合金、铟镓合金中的至少一种。
- 根据权利要求15所述的制作方法，其中，利用预定工艺去除所述第一溶液，使所述微发光二极管单元与所述第一电极连接的步骤包括：利用第一烘烤工艺，去除所述第一开口内的第一溶液，使所述微发光二极管单元与所述第一金属层接触；利用第二烘烤工艺，去除所述第二介质及使所述第一金属层呈熔融状态，使所述第一金属层通过所述第二开口与所述第一电极连接。
- 根据权利要求10所述的制作方法，其中，在所述微发光二极管单元上形成第二电极层之前，还包括步骤：在所述第一开口内形成平坦层，所述平坦层的厚度不大于所述微发光二极管单元的厚度；利用灰化工艺去除所述微发光二极管单元上所述平坦层。
- 一种显示面板，其中，所述显示面板采用权利要求1所述显示面板的制作方法制成。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811018646.7 | 2018-09-03 | ||
| CN201811018646.7A CN109301051B (zh) | 2018-09-03 | 2018-09-03 | 显示面板及其制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020047888A1 true WO2020047888A1 (zh) | 2020-03-12 |
Family
ID=65166146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2018/105222 WO2020047888A1 (zh) | 2018-09-03 | 2018-09-12 | 显示面板及其制作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109301051B (zh) |
| WO (1) | WO2020047888A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047866B (zh) * | 2019-04-30 | 2021-04-02 | 京东方科技集团股份有限公司 | 阵列基板、显示面板及微型led的转移方法 |
| KR20210130889A (ko) | 2020-04-22 | 2021-11-02 | 삼성디스플레이 주식회사 | 발광 소자 잉크 및 표시 장치의 제조 방법 |
| CN111584579B (zh) * | 2020-05-14 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板及拼接屏 |
| KR20210154295A (ko) * | 2020-06-11 | 2021-12-21 | 삼성디스플레이 주식회사 | 발광 소자 잉크, 표시 장치 및 그 제조 방법 |
| WO2022016417A1 (zh) * | 2020-07-22 | 2022-01-27 | 重庆康佳光电技术研究院有限公司 | 微发光二极管的巨量转移方法、巨量转移装置及显示装置 |
| CN112133210B (zh) * | 2020-09-27 | 2022-06-17 | 湖北长江新型显示产业创新中心有限公司 | 一种Micro LED喷墨打印装置、转运方法、显示面板及显示装置 |
| CN115410996B (zh) * | 2022-07-28 | 2024-04-19 | 惠科股份有限公司 | 显示面板及其制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715218A (zh) * | 2012-10-08 | 2014-04-09 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
| CN103811523A (zh) * | 2012-11-13 | 2014-05-21 | 三星显示有限公司 | 有机电致发光显示器及其制造方法 |
| CN107623076A (zh) * | 2017-09-29 | 2018-01-23 | 深圳市华星光电半导体显示技术有限公司 | 全溶液oled器件及其制作方法 |
| CN108269786A (zh) * | 2017-01-03 | 2018-07-10 | 群创光电股份有限公司 | 显示器件 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870265A (zh) * | 2016-04-19 | 2016-08-17 | 京东方科技集团股份有限公司 | 发光二极管基板及其制备方法、显示装置 |
| CN107331670A (zh) * | 2017-07-10 | 2017-11-07 | 深圳市华星光电技术有限公司 | 显示面板及其制作方法、显示设备 |
-
2018
- 2018-09-03 CN CN201811018646.7A patent/CN109301051B/zh active Active
- 2018-09-12 WO PCT/CN2018/105222 patent/WO2020047888A1/zh active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715218A (zh) * | 2012-10-08 | 2014-04-09 | 三星显示有限公司 | 有机发光显示装置及其制造方法 |
| CN103811523A (zh) * | 2012-11-13 | 2014-05-21 | 三星显示有限公司 | 有机电致发光显示器及其制造方法 |
| CN108269786A (zh) * | 2017-01-03 | 2018-07-10 | 群创光电股份有限公司 | 显示器件 |
| CN107623076A (zh) * | 2017-09-29 | 2018-01-23 | 深圳市华星光电半导体显示技术有限公司 | 全溶液oled器件及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109301051B (zh) | 2019-11-22 |
| CN109301051A (zh) | 2019-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2020047888A1 (zh) | 显示面板及其制作方法 | |
| US10923529B2 (en) | Display substrate, method for manufacturing display substrate, and display device | |
| CN110120463B (zh) | 显示基板及其制备方法、显示装置 | |
| US9831297B2 (en) | AMOLED array substrate, method for manufacturing the same and display device | |
| US9825256B2 (en) | Display panel having a top surface of the conductive layer coplanar with a top surface of the pixel define layer | |
| US10937998B1 (en) | Display panel and method for preparing the same, and display device | |
| CN109888085B (zh) | 显示面板及其制备方法 | |
| WO2022111094A1 (zh) | 显示基板及其制备方法、显示装置 | |
| WO2022017026A1 (zh) | 可拉伸显示面板及其制造方法、显示装置 | |
| WO2021238482A1 (zh) | 显示基板及其制作方法、显示装置 | |
| CN109742106B (zh) | 显示面板及其制作方法、显示装置 | |
| WO2016145777A1 (zh) | 显示背板及其制作方法、以及显示装置 | |
| CN114759071A (zh) | 显示基板及其制造方法、显示装置 | |
| US10236279B2 (en) | Emissive display with light management system | |
| CN203134796U (zh) | 一种阵列基板及其平板显示器 | |
| WO2024198080A1 (zh) | 显示面板及其制备方法 | |
| WO2021184522A1 (zh) | 背光模组及其制备方法和显示装置 | |
| WO2020224487A1 (zh) | 盖板结构及其制作方法、显示面板、显示装置 | |
| WO2021203415A1 (zh) | 驱动基板及其制作方法、显示装置 | |
| WO2021189483A1 (zh) | 显示基板及其制备方法、显示装置 | |
| CN111785760A (zh) | 一种显示基板及其制备方法、显示装置 | |
| CN110867526B (zh) | 显示基板及其制备方法、显示装置 | |
| US20240292672A1 (en) | Display panel and display device | |
| WO2021051641A1 (zh) | 显示面板及显示装置 | |
| WO2024051295A1 (zh) | 一种MicroLED显示面板、显示设备及制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18932369 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 18932369 Country of ref document: EP Kind code of ref document: A1 |