WO2020042236A1 - 显示面板及其制作方法、电子装置 - Google Patents

显示面板及其制作方法、电子装置 Download PDF

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Publication number
WO2020042236A1
WO2020042236A1 PCT/CN2018/105552 CN2018105552W WO2020042236A1 WO 2020042236 A1 WO2020042236 A1 WO 2020042236A1 CN 2018105552 W CN2018105552 W CN 2018105552W WO 2020042236 A1 WO2020042236 A1 WO 2020042236A1
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Prior art keywords
layer
light
array substrate
display panel
color resist
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Ceased
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PCT/CN2018/105552
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English (en)
French (fr)
Inventor
唐岳军
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/303,669 priority Critical patent/US20210242430A1/en
Publication of WO2020042236A1 publication Critical patent/WO2020042236A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers

Definitions

  • the present application relates to the field of display, and in particular, to a display panel, a manufacturing method thereof, and an electronic device.
  • OLED Organic Light-Emitting Diode
  • the color filter layer of the existing white OLED display panel is located between the insulating layer and the flat layer on the source and drain layers, and the anode layer, the light emitting layer and the cathode layer of the light emitting device layer are located between the flat layer and the pixel defining layer.
  • the existing white OLED display panel is generally a bottom emission display, that is, the light emitted from the light emitting layer passes through the substrate and reaches the human eye.
  • the light-emitting layer restricted by the pixel-limiting layer can only be disposed between the TFTs (thin film transistors), and cannot be located above the TFTs, limiting the existing white OLED display panel Or the area of the light-emitting area in each pixel.
  • the present application provides a display panel, a manufacturing method thereof, and an electronic device, so as to solve the technical problem of a small aperture ratio of the existing OLED display panel.
  • the present application provides a display panel including:
  • a light emitting device layer on the color resist layer A light emitting device layer on the color resist layer
  • a reflective layer located between the color resist layer and the array substrate, the reflective layer is used to reflect light emitted from the light emitting device layer.
  • the light emitting device layer includes an anode layer, a light emitting layer located on the anode layer, and a cathode layer located on the light emitting layer;
  • the anode layer is a transparent electrode
  • the cathode layer is a transparent electrode or a semi-transparent electrode.
  • the reflection layer includes at least two reflection units, and the reflection units are in one-to-one correspondence with the light-emitting units in the light-emitting layer.
  • the orthographic projection of the light-emitting layer on the reflection layer is located in the reflection layer.
  • the reflection unit includes a first surface and a second surface, and the first surface is a concave surface remote from the array substrate.
  • This application proposes a method for manufacturing a display panel, including:
  • the method before forming a color resist layer on the array substrate, the method further includes:
  • a reflective layer is formed on the array substrate.
  • the reflection layer includes at least two reflection units, and the reflection units are in one-to-one correspondence with the light-emitting units in the light-emitting device layer.
  • an orthographic projection of the light-emitting layer on the reflection layer is located in the reflection layer.
  • the reflection unit includes a first surface and a second surface, and the first surface is a concave surface far from the array substrate.
  • the present application also proposes an electronic device including a display panel, wherein the display panel includes:
  • a light emitting device layer on the color resist layer including a light emitting layer
  • a reflective layer between the color resist layer and the array substrate, the reflective layer is configured to reflect light emitted from the light emitting device layer;
  • the reflection layer includes at least two reflection units, and the reflection units are in one-to-one correspondence with the light-emitting units in the light-emitting layer.
  • the orthographic projection of the light-emitting layer on the reflection layer is located in the reflection layer.
  • the reflection unit includes a first surface, and the first surface is a concave surface remote from the array substrate.
  • the present application enables the display panel to form a top-emitting white light display, which eliminates the limitation of the position of the opening area in the pixel, improves the aperture ratio of the display panel, and increases the light emitting area.
  • part of the white light directly enters the human eye, which improves the luminous efficiency of the display panel and reduces the power consumption of the electronic device.
  • FIG. 1 is a film structure diagram of a first embodiment of a display panel of the present application
  • FIG. 2 is a film structure diagram of a second embodiment of a display panel of the present application.
  • FIG. 3 is a film structure diagram of a third embodiment of a display panel of the present application.
  • FIG. 4 is a step diagram of a display panel manufacturing method of the present application.
  • FIG. 5 is a process diagram of a display panel manufacturing method of the present application.
  • FIG. 6 is another process diagram of a display panel manufacturing method of the present application.
  • FIG. 1 is a structural diagram of a film layer according to a first embodiment of a display panel of the present application.
  • the display panel includes an array substrate, a color resist layer 103 on the array substrate, and a light emitting device layer on the color resist layer 103.
  • the array substrate includes a substrate 101 and a thin film transistor layer 102 on the substrate 101.
  • a raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the thin film transistor layer 102 includes an ESL (etch stop layer type), a BCE (back channel etch type), or a Top-gate (top gate thin film transistor type) structure, which is not specifically limited.
  • the top-gate thin film transistor type may include a buffer layer, an active layer, a gate insulating layer, a gate layer, an inter-insulating layer, a source-drain layer, and a flat layer.
  • the color resist layer 103 includes at least two color resist units.
  • the color resist unit includes one of a red color resist block, a green color resist block, and a blue color resist block. Each of the color resist units corresponds to a light emitting device. Light-emitting unit.
  • the light emitting device layer includes an anode layer 109, a light emitting layer 110 located on the anode layer 109, that is, a cathode layer 111 located on the light emitting layer 110.
  • the anode layer 109 is formed on the flat layer.
  • the anode layer 109 includes at least two anodes arranged in an array.
  • the anode layer 109 is mainly used to provide holes for absorbing electrons.
  • the light emitting layer 110 is formed on the anode layer 109.
  • the light emitting layer 110 is divided into a plurality of light emitting units by the pixel defining layer 112, and each of the light emitting units corresponds to one of the anodes.
  • the cathode layer 111 is formed on the light emitting device layer, and the cathode layer 111 covers the light emitting layer 110 and the pixel defining layer 112 on the array substrate.
  • the display panel further includes a reflective layer 106 between the color resist layer 103 and the array substrate.
  • the reflective layer 106 is configured to reflect light emitted from the light emitting device layer.
  • the material of the reflective layer 106 may be selected from silver (Ag), aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), gold (Au), and palladium (Pd).
  • the display panel may be a top-emitting OLED display device.
  • the anode layer 109 is a transparent metal electrode
  • the cathode layer 111 is a transparent or translucent metal electrode.
  • the material of the anode layer 109 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or At least one of zinc aluminum oxide (AZO).
  • the material of the cathode layer 111 may be at least one of magnesium (Mg), calcium (Ca), aluminum (Al), or silver (Ag).
  • the light emitted from the light-emitting layer 110 passes through the anode layer 109, it enters the color resist layer 103 and reflects light corresponding to the color of the color resist, and passes through the anode layer 109 and the cathode layer 111 again. Into the human eye.
  • the light emitted by the light-emitting layer 110 passes through the reflective layer 106.
  • Another part of the light source directly enters the human eye through the cathode layer 111, and this part of the light source is white light without passing through the color filter film. Therefore, the light emitted by each pixel unit is the superposition of white light and the light filtered by the corresponding color block to achieve RGBW display.
  • the reflection layer 106 includes at least two reflection units, and the reflection units correspond to the light-emitting units in the light-emitting layer 110 one-to-one.
  • the orthographic projection of the light-emitting layer 110 on the reflective layer 106 is located in the reflective layer 106.
  • FIG. 2 is a structural diagram of a film layer according to a second embodiment of a display panel of the present application.
  • the reflective layer 106 is disposed on the array substrate in a whole layer. Since there is metal in the connection vias between the anode layer 109 and the source and drain electrodes, the reflection layer needs to be disposed to avoid the vias to prevent a short circuit of the circuit. Since the light source emitted by the light emitting unit is non-directional, the arrangement of the reflective layer 106 in this embodiment improves the light emitting efficiency of the light emitting device.
  • FIG. 3 is a structural diagram of a film layer according to a third embodiment of a display panel of the present application.
  • the reflection unit 106 includes a first surface, and the first surface is a concave surface far from the array substrate.
  • the reflective layer 106 is set as a groove by using the principle of a concave lens, so that more proportions of the emitted light pass through the cathode layer 111 vertically, thereby improving the light-emitting efficiency of the light-emitting device.
  • a reflective layer is provided between the color resist layer and the array substrate, so that the display panel forms a top-emitting white light display, that is, colored light that passes through the color resist layer and white light that does not pass through the color resist layer;
  • the proportion of total light can be adjusted by changing the transmittance of the cathode layer, such as the material or thickness of the cathode layer, and then adjusting the effect of white light on the gain and color of RGB color brightness; and the top-emitting white light display eliminates
  • the limitation of the position of the opening area in the pixel increases the aperture ratio of the display panel and increases the area of the light-emitting area; part of the white light directly enters the human eye, which improves the light-emitting efficiency of the display panel and reduces the power consumption of the electronic device.
  • FIG. 4 is a flowchart of a method for manufacturing a display panel of the present application.
  • the manufacturing method of the display panel includes steps:
  • S10. Provide an array substrate.
  • FIG. 5 is a process diagram of a display panel manufacturing method of the present application.
  • the array substrate provided includes a substrate 101 and a thin film transistor layer 102 on the substrate 101.
  • a raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the thin film transistor layer 102 includes an ESL (etch stop layer type), a BCE (back channel etch type), or a Top-gate (top gate thin film transistor type) structure, which is not specifically limited.
  • the top-gate thin film transistor type may include a buffer layer, an active layer, a gate insulating layer, a gate layer, an inter-insulating layer, a source-drain layer, and a flat layer.
  • a reflective layer is formed on the array substrate.
  • FIG. 6 is another process diagram of a method for manufacturing a display panel of the present application.
  • the reflective layer 106 may be formed by a process such as deposition or metal sputtering to form the structure shown in FIG. 1.
  • the reflective layer 106 is configured to reflect light emitted from the light emitting device layer.
  • the material of the reflective layer 106 may be selected from silver (Ag), aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and gold (Au). ), One or more combinations of palladium (Pd).
  • a color resist layer is formed on the array substrate.
  • the color resist layer 103 can be prepared by processes such as a dyeing method, a printing method, an electrodeposition method, and an inkjet method.
  • the color resist layer 103 includes at least two color resist units.
  • the color resist unit includes one of a red color resist block, a green color resist block, and a blue color resist block. Each of the color resist units corresponds to a light emitting device. Light-emitting unit.
  • a light emitting device layer is sequentially formed on the color resist layer.
  • the light emitting device layer includes an anode layer 109, a light emitting layer 110 located on the anode layer 109, and a cathode layer 111 located on the light emitting layer 110 to form a structure shown in FIG.
  • the anode layer 109 is formed on the flat layer.
  • the anode layer 109 includes at least two anodes arranged in an array.
  • the anode layer 109 is mainly used to provide holes for absorbing electrons.
  • the light emitting layer 110 is formed on the anode layer 109.
  • the light emitting layer 110 is divided into a plurality of light emitting units by the pixel defining layer 112, and each of the light emitting units corresponds to one of the anodes.
  • the cathode layer 111 is formed on the light emitting device layer, and the cathode layer 111 covers the light emitting layer 110 and the pixel defining layer 112 on the array substrate.
  • the display panel may be a top-emitting OLED display device.
  • the anode layer 109 is a transparent metal electrode
  • the cathode layer 111 is a transparent or translucent metal electrode.
  • the material of the anode layer 109 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or At least one of zinc aluminum oxide (AZO).
  • the material of the cathode layer 111 may be at least one of magnesium (Mg), calcium (Ca), aluminum (Al), or silver (Ag).
  • the reflection layer 106 includes at least two reflection units, and the reflection units correspond to the light-emitting units in the light-emitting layer 110 one-to-one.
  • the orthographic projection of the light-emitting layer 110 on the reflective layer 106 is located in the reflective layer 106.
  • the reflective layer 106 is disposed in a whole layer on the array substrate. Since there is metal in the connection vias between the anode layer 109 and the source and drain electrodes, the reflection layer needs to be disposed to avoid the vias to prevent a short circuit of the circuit. Since the light source emitted by the light emitting unit is non-directional, the arrangement of the reflective layer 106 in this embodiment improves the light emitting efficiency of the light emitting device.
  • the reflection unit 106 includes a first surface, and the first surface is a concave surface away from the array substrate.
  • the reflective layer 106 is set as a groove by using the principle of a concave lens, so that more proportions of the emitted light pass through the cathode layer 111 vertically, thereby improving the light-emitting efficiency of the light-emitting device.
  • the present application also proposes an electronic device including the above display panel.
  • the electronic device includes, but is not limited to, a mobile phone, a tablet computer, a computer monitor, a game console, a television, a display screen, a wearable device, and other household appliances or household appliances with a display function.
  • the display panel includes an array substrate; a color resist layer on the array substrate; a light-emitting device layer on the color resist layer; A reflective layer between the color resist layer and the array substrate, the reflective layer is configured to reflect light emitted from the light emitting device layer.
  • the present application enables the display panel to form a top-emitting white light display, which eliminates the limitation of the position of the opening area in the pixel, improves the aperture ratio of the display panel, and increases the light emitting area In addition, part of the white light directly enters the human eye, which improves the luminous efficiency of the display panel and reduces the power consumption of the electronic device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板及其制作方法、电子装置，所述显示面板包括阵列基板；于所述阵列基板上的色阻层（103）；位于所述色阻层（103）上的发光器件层；位于所述色阻层（103）与所述阵列基板之间的反射层（106），所述反射层（106）用于反射所述发光器件层发出的光线。

Description

显示面板及其制作方法、电子装置 技术领域
本申请涉及显示领域，特别涉及一种显示面板及其制作方法、电子装置。
 背景技术
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。
现有白光OLED显示面板的彩色滤光层位于源漏极层上的绝缘层与平坦层之间，发光器件层的阳极层、发光层及阴极层位于平坦层与像素限定层之间。基于该结构，现有的白光OLED显示面板一般为底发光型显示器，即发光层发出的光线透过基底发出到达人眼。因此，为了使得发光层发光的光线被最大化利用，被像素限定层限制的发光层只能设置于各TFT（薄膜晶体管）之间，而不能位于TFT之上，限制了现有白光OLED显示面板的开口率或者各像素中发光区域面积大小。
因此，目前亟需一种显示面板以解决上述问题。
 技术问题
本申请提供一种显示面板及其制作方法、电子装置，以解决现有OLED显示面板开口率较小的技术问题。
 技术解决方案
本申请提供一种显示面板，其包括：
阵列基板；
位于所述阵列基板上的色阻层；
位于所述色阻层上的发光器件层；以及
位于所述色阻层与所述阵列基板之间的反射层，所述反射层用于反射所述发光器件层发出的光线。
在本申请的显示面板中，所述发光器件层包括阳极层、位于所述阳极层上的发光层及位于所述发光层上的阴极层；
其中，所述阳极层为透明电极，所述阴极层为透明电极或半透明电极。
在本申请的显示面板中，所述反射层包括至少两个反射单元，所述反射单元与所述发光层中的发光单元一一对应。
在本申请的显示面板中，所述发光层在所述反射层上的正投影位于所述反射层内。
在本申请的显示面板中，所述反射单元包括第一表面和第二表面，所述第一表面为远离所述阵列基板的凹面。
本申请提出了一种显示面板的制作方法，包括：
提供一阵列基板；
在所述阵列基板上形成色阻层；
在所述色阻层上依次形成发光器件层；
其中，在所述阵列基板上形成色阻层之前还包括：
在所述阵列基板上形成反射层。
在本申请的制作方法中，所述反射层包括至少两个反射单元，所述反射单元与所述发光器件层中的发光单元一一对应。
在本申请的制作方法中，所述发光层在所述反射层上的正投影位于所述反射层内。
在本申请的制作方法中，所述反射单元包括第一表面和第二表面，所述第一表面为远离所述阵列基板的凹面。
本申请还提出了一种电子装置，包括显示面板，其中，所述显示面板包括：
阵列基板；
位于所述阵列基板上的色阻层；
位于所述色阻层上的发光器件层，包括发光层；以及
位于所述色阻层与所述阵列基板之间的反射层，所述反射层用于反射所述发光器件层发出的光线；
其中，所述反射层包括至少两个反射单元，所述反射单元与所述发光层中的发光单元一一对应
在本申请的电子装置中，所述发光层在所述反射层上的正投影位于所述反射层内。
在本申请的电子装置中，所述反射单元包括第一表面，所述第一表面为远离所述阵列基板的凹面。
 有益效果
本申请通过在色阻层与阵列基板之间设置反射层，使得所述显示面板形成顶发光型白光显示器，消除了像素中开口区位置的限制，提高了显示面板的开口率，增加了发光区域的面积；另外，部分白光直接进入人眼，提升了显示面板的发光效率，降低了电子装置的功耗。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请显示面板第一种实施方式的膜层结构图；
图2为本申请显示面板第二种实施方式的膜层结构图；
图3为本申请显示面板第三种实施方式的膜层结构图；
图4为本申请一种显示面板制作方法的步骤图；
图5为本申请一种显示面板制作方法的工艺图；
图6为本申请一种显示面板制作方法的另一工艺图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本申请显示面板第一种实施方式的膜层结构图。
所述显示面板包括阵列基板、位于所述阵列基板上的色阻层103、位于所述色阻层103上的发光器件层。
所述阵列基板包括基板101及位于所述基板101上的薄膜晶体管层102。在一种实施例中，所述基板101的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。
所述薄膜晶体管层102包括ESL（蚀刻阻挡层型）、BCE（背沟道蚀刻型）或Top-gate（顶栅薄膜晶体管型）结构，具体没有限制。例如，顶栅薄膜晶体管型可以包括：缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极层以及平坦层。
所述色阻层103包括至少两个色阻单元，所述色阻单元包括红色色阻块、绿色色阻块及蓝色色阻块中的一种，每一所述色阻单元对应一发光器件中的发光单元。
所述发光器件层包括阳极层109、位于所述阳极层109上的发光层110、即位于所述发光层110上的阴极层111。
所述阳极层109形成于所述平坦层上。所述阳极层109包括至少两个成阵列排布的阳极，所述阳极层109主要用于提供吸收电子的空穴；。
所述发光层110形成于所述阳极层109上。所述发光层110被所述像素定义层112分隔成多个发光单元，每一所述发光单元对应一所述阳极。
所述阴极层111形成于所述发光器件层上，所述阴极层111覆盖所述发光层110及位于阵列基板上的所述像素定义层112。
所述显示面板还包括位于所述色阻层103与所述阵列基板之间的反射层106。所述反射层106用于反射所述发光器件层发出的光线。所述反射层106的材料可选为银（Ag）、铝（Al）、铬（Cr）、钼（Mo）、钨（W）、钛（Ti）、金（Au）、钯（Pd）中的一种或一种以上的组合物、
在一种实施例中，由于所述显示面板可以为顶发光型OLED显示器件。所述阳极层109为透明的金属电极，所述阴极层111为透明或半透明的金属电极。
在一种实施例中，阳极层109的材料可选为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。所述阴极层111的材料可选为镁（Mg）、钙（Ca）、铝（Al）或银（Ag）中的至少一种。
在一种实施例中，所述发光层110发出的光线透过所述阳极层109后，进入所述色阻层103并反射对应色阻颜色的光线，并再次经过阳极层109及阴极层111进入人眼。
在一种实施例中，由于所述发光层110发出的光线只有部分经过反射层106。另一部分光源直接透过所述阴极层111进入人眼，此部分光源为未经过彩色滤光膜的白光。因此，每一像素单元发出的光线为白光与对应色阻过滤后的光线的叠加，实现了RGBW显示。
请参阅图1，所述反射层106包括至少两个反射单元，所述反射单元与所述发光层110中的发光单元一一对应。在一种实施例中，所述发光层110在所述反射层106上的正投影位于所述反射层106内。
请参阅图2，图2为本申请显示面板第二种实施方式的膜层结构图。
所述反射层106在所述阵列基板上整层设置。由于阳极层109与源漏极的连接过孔存在金属，因此反射层的设置需要避开该过孔，防止电路的短路。由于发光单元发出的光源为非定向的，因此本实施例中反射层106的设置提高了发光器件的发光效率。
请参阅图3，图3为本申请显示面板第三种实施方式的膜层结构图。
所述反射单元106包括第一表面，所述第一表面为远离所述阵列基板的凹面。利用凹透镜的原理将所述反射层106设置成凹槽，使得出射光线中有更多比例垂直的透过所述阴极层111，提高了发光器件的发光效率。
本申请通过在色阻层与阵列基板之间设置反射层，使得所述显示面板形成顶发光型白光显示器，即透过色阻层的彩色光与未透过色阻层的白光；其中，白光在全部光亮中的占比可以通过改变所述阴极层的透过率进行调整，例如阴极层的材料或厚度，进而调整白光对RGB颜色亮度的增益及颜色的影响；而顶发光型白光显示器消除了像素中开口区位置的限制，提高了显示面板的开口率，增加了发光区域的面积；部分白光直接进入人眼，提升了显示面板的发光效率，降低了电子装置的功耗。
请参阅图4，图4为本申请一种显示面板制作方法的步骤图。
所述显示面板的制作方法包括步骤：
S10、提供一阵列基板。
请参阅图5，图5为本申请一种显示面板制作方法的工艺图。
在本步骤中，所提供的所述阵列基板包括基板101及位于所述基板101上的薄膜晶体管层102。在一种实施例中，所述基板101的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。
所述薄膜晶体管层102包括ESL（蚀刻阻挡层型）、BCE（背沟道蚀刻型）或Top-gate（顶栅薄膜晶体管型）结构，具体没有限制。例如，顶栅薄膜晶体管型可以包括：缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极层以及平坦层。
S20、在所述阵列基板上形成反射层。
请参阅图6，图6为本申请一种显示面板制作方法的另一工艺图。
在本步骤中，所述反射层106可以采用沉积或金属溅射等工艺形成，以形成图1所示的结构。所述反射层106用于反射所述发光器件层发出的光线。在一种实施例中，所述反射层106的材料可选为银（Ag）、铝（Al）、铬（Cr）、钼（Mo）、钨（W）、钛（Ti）、金（Au）、钯（Pd）中的一种或一种以上的组合物。
S30、在所述阵列基板上形成色阻层。
在本步骤中，所述色阻层103可以通过染色法、印刷法、电着法、喷墨等工艺放进行制备。
所述色阻层103包括至少两个色阻单元，所述色阻单元包括红色色阻块、绿色色阻块及蓝色色阻块中的一种，每一所述色阻单元对应一发光器件中的发光单元。
S40、在所述色阻层上依次形成发光器件层。
本步骤中，所述发光器件层包括阳极层109、位于所述阳极层109上的发光层110、及位于所述发光层110上的阴极层111，以形成图1所示的结构。
所述阳极层109形成于所述平坦层上。所述阳极层109包括至少两个成阵列排布的阳极，所述阳极层109主要用于提供吸收电子的空穴；。
所述发光层110形成于所述阳极层109上。所述发光层110被所述像素定义层112分隔成多个发光单元，每一所述发光单元对应一所述阳极。
所述阴极层111形成于所述发光器件层上，所述阴极层111覆盖所述发光层110及位于阵列基板上的所述像素定义层112。
在一种实施例中，由于所述显示面板可以为顶发光型OLED显示器件。所述阳极层109为透明的金属电极，所述阴极层111为透明或半透明的金属电极。
在一种实施例中，阳极层109的材料可选为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。所述阴极层111的材料可选为镁（Mg）、钙（Ca）、铝（Al）或银（Ag）中的至少一种。
请参阅图1，所述反射层106包括至少两个反射单元，所述反射单元与所述发光层110中的发光单元一一对应。在一种实施例中，所述发光层110在所述反射层106上的正投影位于所述反射层106内。
请参阅图2，所述反射层106在所述阵列基板上整层设置。由于阳极层109与源漏极的连接过孔存在金属，因此反射层的设置需要避开该过孔，防止电路的短路。由于发光单元发出的光源为非定向的，因此本实施例中反射层106的设置提高了发光器件的发光效率。
请参阅图3，所述反射单元106包括第一表面，所述第一表面为远离所述阵列基板的凹面。利用凹透镜的原理将所述反射层106设置成凹槽，使得出射光线中有更多比例垂直的透过所述阴极层111，提高了发光器件的发光效率。
本申请还提出了一种电子装置，所述电子装置包括上述显示面板。可以理解的，所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。
本申请提出了一种显示面板及其制作方法、电子装置，所述显示面板包括阵列基板；于所述阵列基板上的色阻层；位于所述色阻层上的发光器件层；位于所述色阻层与所述阵列基板之间的反射层，所述反射层用于反射所述发光器件层发出的光线。本申请通过在色阻层与阵列基板之间设置反射层，使得所述显示面板形成顶发光型白光显示器，消除了像素中开口区位置的限制，提高了显示面板的开口率，增加了发光区域的面积；另外，部分白光直接进入人眼，提升了显示面板的发光效率，降低了电子装置的功耗。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种显示面板，其包括：
    阵列基板；
    位于所述阵列基板上的色阻层；
    位于所述色阻层上的发光器件层；以及
    位于所述色阻层与所述阵列基板之间的反射层，所述反射层用于反射所述发光器件层发出的光线。
  2. 根据权利要求1所述的显示面板，其中，所述发光器件层包括阳极层、位于所述阳极层上的发光层及位于所述发光层上的阴极层；
    其中，所述阳极层为透明电极，所述阴极层为透明电极或半透明电极。
  3. 根据权利要求2所述的显示面板，其中，所述反射层包括至少两个反射单元，所述反射单元与所述发光层中的发光单元一一对应。
  4. 根据权利要求3所述的显示面板，其中，所述发光层在所述反射层上的正投影位于所述反射层内。
  5. 根据权利要求3所述的显示面板，其中，所述反射单元包括第一表面，所述第一表面为远离所述阵列基板的凹面。
  6. 一种显示面板的制作方法，其中，所述制作方法包括：
    提供一阵列基板；
    在所述阵列基板上形成色阻层；
    在所述色阻层上依次形成发光器件层；
    其中，在所述阵列基板上形成色阻层之前还包括：
    在所述阵列基板上形成反射层。
  7. 根据权利要求6所述的制作方法，其中，所述反射层包括至少两个反射单元，所述反射单元与所述发光器件层中的发光单元一一对应。
  8. 根据权利要求7所述的制作方法，其中，所述发光层在所述反射层上的正投影位于所述反射层内。
  9. 根据权利要求7所述的制作方法，其中，所述反射单元包括第一表面，所述第一表面为远离所述阵列基板的凹面。
  10. 一种电子装置，包括显示面板，其特征在于，所述显示面板包括：
    阵列基板；
    位于所述阵列基板上的色阻层；
    位于所述色阻层上的发光器件层，包括发光层；以及
    位于所述色阻层与所述阵列基板之间的反射层，所述反射层用于反射所述发光器件层发出的光线；
    其中，所述反射层包括至少两个反射单元，所述反射单元与所述发光层中的发光单元一一对应。
  11. 根据权利要求10所述的电子装置，其中，所述发光层在所述反射层上的正投影位于所述反射层内。
  12. 根据权利要求10所述的电子装置，其中，所述反射单元包括第一表面，所述第一表面为远离所述阵列基板的凹面。
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