WO2020026818A1 - Flaky resin composition for encapsulation and semiconductor device - Google Patents

Flaky resin composition for encapsulation and semiconductor device Download PDF

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Publication number
WO2020026818A1
WO2020026818A1 PCT/JP2019/028135 JP2019028135W WO2020026818A1 WO 2020026818 A1 WO2020026818 A1 WO 2020026818A1 JP 2019028135 W JP2019028135 W JP 2019028135W WO 2020026818 A1 WO2020026818 A1 WO 2020026818A1
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Prior art keywords
resin composition
sealing resin
flake
mass
less
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PCT/JP2019/028135
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French (fr)
Japanese (ja)
Inventor
須藤　信博
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京セラ株式会社
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Priority to CN201980047496.9A priority Critical patent/CN112424284B/en
Priority to JP2020533411A priority patent/JP6941737B2/en
Priority to KR1020217001333A priority patent/KR102506974B1/en
Publication of WO2020026818A1 publication Critical patent/WO2020026818A1/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/011—Crosslinking or vulcanising agents, e.g. accelerators
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure relates to a flake-shaped resin composition for encapsulating a semiconductor and a semiconductor device.
  • a curing agent and / or a curing accelerator As a sealing material for semiconductor devices such as transistors, ICs (Integrated Circuits), and LSIs (Large Scale Integration), a curing agent and / or a curing accelerator, an inorganic filler such as silica powder, a coloring agent, and the like are mixed with an epoxy resin.
  • a resin composition is used.
  • transfer molding has been generally used as a sealing process using such a sealing material.
  • surface mount packages are becoming thinner and smaller. In a thinner and smaller surface mount package, the volume occupied by the semiconductor element in the package increases, and the thickness of the sealing resin covering the semiconductor element decreases.
  • the chip area and the number of pins are increasing. Further, with the increase in the number of electrode pads, the pad pitch and the pad size have been reduced, that is, the so-called narrow pad pitch has been advanced.
  • the pitch of the electrode pads on the substrate on which the semiconductor element is mounted cannot be as narrow as that of the semiconductor element. Therefore, by increasing the length of the bonding wire drawn from the semiconductor element or reducing the thickness of the bonding wire, the number of terminals can be increased. However, when the wire becomes thinner, the wire is more likely to flow due to the injection pressure of the resin in a later resin sealing step. In particular, this tendency is remarkable in the side gate transfer molding.
  • a compression molding method has been used as a sealing process instead of transfer molding (for example, see Patent Document 1).
  • an object to be sealed for example, a substrate on which a semiconductor element is mounted
  • a powdery resin for example, aling material
  • the molten sealing material flows in a direction substantially parallel to the main surface of the object to be sealed, the amount of flow can be reduced, and the object to be sealed (for example, It is expected that deformation and breakage of wires, wirings, and the like on a substrate on which a semiconductor element is mounted) can be reduced.
  • Patent Document 2 contains an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and the like.
  • a powdery resin composition having a certain particle size distribution is disclosed.
  • Patent Document 3 discloses a powdery semiconductor in which the degree of compression is set within a range of 6 to 11%, thereby preventing adhesion to a hopper or the like and a crosslinking phenomenon, stabilizing fluidity, and improving measurement accuracy.
  • a sealing material is disclosed.
  • Patent Literature 4 discloses a granular resin composition in which the bulk density is adjusted to 0.8 g / cm 3 or more and 1.1 g / cm 3 or less to improve transportability, weighing accuracy, and the like. .
  • the sealing materials described in Patent Documents 2 to 4 have a small sealing resin thickness, and are not sufficient as materials for sealing semiconductor elements connected by thin and long bonding wires. In particular, it was not sufficient in terms of reducing deformation and breakage (wire flow) of the wire and improving the formability. Further, as the capacity and the function of a semiconductor device are increased, the number of stacked semiconductor elements is increasing. When a plurality of semiconductor elements are stacked, an unfilled portion occurs on the semiconductor element because the thickness of the sealing material on the semiconductor element is reduced. In addition, if the semiconductor element is not completely sealed with a resin molded product, sufficient characteristics cannot be secured in a reliability test.
  • the present disclosure can be used for a compression molding method, can sufficiently reduce wire flow during molding, and can sufficiently improve moldability, and a flake-shaped sealing resin composition, and the sealing resin composition To provide a highly reliable semiconductor device sealed by using the semiconductor device.
  • the present inventors have found that when the sealing resin composition has a specific shape as described later, it is possible to reduce wire flow and obtain good formability in the compression molding method.
  • a flake-shaped sealing resin composition containing (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a curing accelerator, and (D) an inorganic filler, 80% by mass or more of the flake-shaped sealing resin composition has a pair of parallel planes, and a distance between the pair of planes is 150 to 1000 ⁇ m, and is a parallel plane-containing resin composition;
  • the flake-shaped sealing resin composition passing through a sieve having a nominal opening of 150 ⁇ m contained in the flake-shaped sealing resin composition is 5% by mass or less, and the nominal opening is A flake-shaped sealing resin composition that does not pass through a 2 mm sieve and is 5% by mass or less.
  • the flake-shaped sealing resin composition passing through a sieve having a nominal opening of more than 150 ⁇ m and 1 mm or less contained in the flake-shaped sealing resin composition is 20 mass%. % Of the flake-form sealing resin composition according to the above [1].
  • the resin composition for sealing flakes according to the above [1] or [2], wherein the void ratio represented by the following formula (1) is 60% or less. Gap ratio (%) ⁇ 1 ⁇ (resin supply area / cavity area) ⁇ ⁇ 100 (1) (Here, the void ratio indicates an area ratio not covered by the sealing resin composition when the sealing resin composition is supplied into the cavity, and the cavity area is an effective area at the bottom of the molding die.
  • a flake-shaped sealing resin composition which is used in a compression molding method, can sufficiently reduce wire flow during molding, and can sufficiently improve moldability, and the sealing resin A highly reliable semiconductor device sealed with the composition can be provided.
  • 1 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure.
  • 6 is a binarized image when a gap ratio is calculated according to the first embodiment.
  • 13 is a binarized image when the gap ratio of Comparative Example 3 is calculated.
  • the flake-shaped sealing resin composition of the present embodiment includes (A) an epoxy resin, (B) a phenol resin curing agent, (C) a curing accelerator, and ( D) A flake-shaped sealing resin composition containing an inorganic filler, 80% by mass or more of the flake-shaped sealing resin composition has a pair of parallel planes, and a distance between the pair of planes is 150 to 1000 ⁇ m, and is a parallel plane-containing resin composition;
  • the flake-shaped sealing resin composition passing through a sieve having a nominal opening of 150 ⁇ m contained in the flake-shaped sealing resin composition is 5% by mass or less, and the nominal opening is The content of the flake-shaped sealing resin
  • the “flake shape” includes shapes such as a flat shape, a flake shape, and a scale shape.
  • 80% by mass or more of the sealing resin composition has a pair of parallel planes, and the distance between the pair of planes (hereinafter, also referred to as thickness).
  • parallel means that the ratio of the difference between the maximum thickness and the minimum thickness of the sealing resin composition to the average thickness of each sealing resin composition is 5% or less.
  • the agglomerated sealing resin composition may be less likely to transmit heat uniformly, and may have lower solubility. If the thickness of the sealing resin composition exceeds 1000 ⁇ m, heat may not be transmitted uniformly and the melting property may be reduced. From such a viewpoint, the thickness of the sealing resin composition may be 150 to 700 ⁇ m, 150 to 500 ⁇ m, or 200 to 400 ⁇ m.
  • the thickness of the flake-shaped sealing resin composition can be determined, for example, by measuring the thickness of 50 sealing resin compositions using an optical microscope (magnification: 200 times) and calculating the average value. it can.
  • the proportion of the sealing resin composition having the above-mentioned shape (parallel plane-containing resin composition) contained in the flake-shaped sealing resin composition of the present embodiment may be 90% by mass or more. , 95% by mass or more, or 100% by mass.
  • the flake-shaped sealing resin composition of the present embodiment may include a resin composition that is not flake-shaped and a resin composition that does not have the above-described shape.
  • the content is the total amount of the flake-shaped sealing resin composition. May be 20% by mass or less, 10% by mass or less, 5% by mass or less, or may not be contained.
  • the flake-form sealing resin contained in the flake-form sealing resin composition of the present embodiment which passes through a sieve having a nominal opening of 150 ⁇ m by classification using a JIS standard sieve (JIS Z8801-1: 2006).
  • the composition (hereinafter, also referred to as a sealing resin composition a) is 5% by mass or less, and a flake-shaped sealing resin composition that does not pass through a sieve having a nominal opening of 2 mm (hereinafter, also referred to as a sealing resin composition b). Is 5% by mass or less.
  • the sealing resin composition a contained in the flake-shaped sealing resin composition may be 3% by mass or less, or 2% by mass or less.
  • the wire may be deformed and damaged at the time of molding, and voids may be generated in the cured product.
  • the sealing resin composition b contained in the flake-shaped sealing resin composition may be 3% by mass or less, or 2% by mass or less.
  • the resin composition for sealing in the form of flakes of the present embodiment is classified by using a JIS standard sieve (JIS Z8801-1: 2006) to pass through a sieve having a nominal opening of more than 150 ⁇ m and 2 mm or less.
  • the resin composition for sealing may contain a resin composition for stopping, and is classified by using a JIS standard sieve (JIS Z8801-1: 2006) to pass through a sieve having a nominal opening of more than 150 ⁇ m and 1 mm or less.
  • a sealing resin composition c referred to as a sealing resin composition c).
  • the flaky sealing resin composition that passes through a sieve having a nominal opening of more than 150 ⁇ m and 1 mm or less refers to a flake-like sealing that does not pass through a sieve with a nominal opening of 150 ⁇ m but passes through a sieve with a nominal opening of 1 mm. It means a resin composition for stopping.
  • the content of the sealing resin composition c may be 20% by mass or more, 40% by mass or more, or 60% by mass or more. When the sealing resin composition c is contained in an amount of 20% by mass or more, the filling property is improved, and the occurrence of voids and the like in the cured product can be reduced.
  • the upper limit is not particularly limited, and may be 100% by mass or 90% by mass.
  • the content of the encapsulating resin composition (hereinafter, also referred to as encapsulating resin composition d) may be 10 to 75% by mass from the viewpoint of increasing the filling property and reducing the generation of voids. It may be 50 to 50% by mass, or 18 to 40% by mass.
  • the epoxy resin of the component (A) used in the present embodiment is generally a sealing material for electronic parts without being limited by molecular structure, molecular weight, etc., as long as it has two or more epoxy groups in one molecule. Can be widely used.
  • the epoxy resin (A) include biphenyl type epoxy resin, cresol novolak type epoxy resin, phenol novolak type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and dicyclopentadiene.
  • Heterocyclic epoxy resin such as epoxy resin, triphenolmethane epoxy resin, epoxy resin containing triazine nucleus, stilbene type bifunctional epoxy resin, naphthalene type epoxy resin, condensed ring aromatic hydrocarbon modified epoxy resin, alicyclic epoxy Resins.
  • a biphenyl type epoxy resin may be used. These epoxy resins may be used singly or as a mixture of two or more.
  • the softening point of the epoxy resin (A) may be from 40 to 130 ° C. or from 50 to 110 ° C. from the viewpoint of the handleability of the sealing resin composition and the melt viscosity during molding. Good.
  • the softening point in this specification refers to a "ring and ball softening point" and refers to a value measured in accordance with ASTM D36.
  • Examples of commercially available epoxy resins of the component (A) include, for example, YX-4000 (epoxy equivalent 185, softening point 105 ° C) and YX-4000H (epoxy equivalent 193, softening point 105 ° C) manufactured by Mitsubishi Chemical Corporation. ), Nippon Kayaku Co., Ltd., NC-3000 (epoxy equivalent 273, softening point 58 ° C), NC-3000H (epoxy equivalent 288, softening point 91 ° C) (all of which are trade names). .
  • the phenolic resin curing agent of the component (B) used in the present embodiment has two or more phenolic hydroxyl groups per molecule and can cure the epoxy resin of the component (A). Any material that is generally used as a sealing material for electronic components can be used without any particular limitation.
  • Specific examples of the phenol resin curing agent (B) include novolak phenol resins such as phenol novolak resins and cresol novolak resins obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde.
  • the content of the phenolic resin curing agent of the component (B) is determined by the ratio of the number of phenolic hydroxyl groups (b) of the phenolic resin curing agent of the component (B) to the number of epoxy groups (a) of the epoxy resin of the component (A).
  • (B) / (a) may be in the range of 0.3 or more and 1.5 or less, or may be in the range of 0.5 or more and 1.2 or less.
  • the ratio (b) / (a) is 0.3 or more, the moisture resistance reliability of the cured product is improved, and when it is 1.5 or less, the strength of the cured product is improved.
  • the total content of the epoxy resin (A) and the phenolic resin curing agent (B) in the encapsulating resin composition may be 5 to 20% by mass, or 10 to 15% by mass. There may be.
  • the curing accelerator of the component (C) used in the present embodiment is a component that promotes a curing reaction between the epoxy resin of the component (A) and the phenol resin curing agent of the component (B).
  • a known curing accelerator can be used without any particular limitation as long as it has the above-mentioned effect.
  • curing accelerator of the component (C) include 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-undecylimidazole, 1,2-dimethylimidazole, and 2,4-dimethylimidazole.
  • the content of the curing accelerator of the component (C) may be in the range of 0.1 to 5% by mass or 0.1 to 1% by mass based on the total amount of the sealing resin composition. Is also good.
  • the content of the curing accelerator (C) is 0.1% by mass or more, the effect of promoting curability is obtained.
  • the content is 5% by mass or less, deformation and breakage of the wire at the time of molding are suppressed, and the filling property is improved. Can be improved.
  • the inorganic filler of the component (D) used in the present embodiment can be used without particular limitation as long as it is a known inorganic filler generally used for this type of resin composition.
  • the inorganic filler as the component (D) include oxide powders such as fused silica, crystalline silica, crushed silica, synthetic silica, alumina, titanium oxide, and magnesium oxide; and hydroxides such as aluminum hydroxide and magnesium hydroxide.
  • Powders: nitride powders such as boron nitride, aluminum nitride, and silicon nitride are exemplified.
  • One of these inorganic fillers may be used, or two or more thereof may be used in combination.
  • the inorganic filler of the component (D) may be a silica powder or a fused silica among those exemplified above. It may be spherical fused silica. Further, fused silica and silica other than fused silica can be used in combination. In this case, the ratio of silica other than fused silica may be less than 30% by mass of the entire silica powder.
  • the inorganic filler as the component (D) may have an average particle size of 0.5 to 40 ⁇ m, 1 to 30 ⁇ m, or 5 to 20 ⁇ m. Further, the maximum particle size of the inorganic filler as the component (D) may be 55 ⁇ m or less.
  • the average particle size is 0.5 ⁇ m or more, the fluidity and moldability of the sealing resin composition can be improved.
  • the average particle diameter is 40 ⁇ m or less, warpage of a molded product obtained by curing the sealing resin composition can be suppressed, and dimensional accuracy can be improved.
  • the maximum particle size is 55 ⁇ m or less, the moldability of the encapsulating resin composition can be improved.
  • the average particle size of the inorganic filler of the component (D) can be determined by, for example, a laser diffraction type particle size distribution analyzer, and the average particle size is calculated based on the particle size distribution measured by the same device.
  • the content of the inorganic filler as the component (D) may be in the range of 70 to 95% by mass, or may be in the range of 75 to 90% by mass based on the total amount of the sealing resin composition.
  • the content of the inorganic filler as the component (D) is 70% by mass or more, the linear expansion coefficient of the sealing resin composition is not excessively increased, and the sealing resin composition is cured. The dimensional accuracy, moisture resistance, mechanical strength and the like of the molded article to be obtained can be improved.
  • the content of the inorganic filler as the component (D) is 95% by mass or less, a resin sheet obtained by molding the sealing resin composition can be hardly cracked.
  • the melt viscosity of the sealing resin composition does not increase too much, and the fluidity and moldability can be improved.
  • the sealing resin composition of the present embodiment includes, in addition to the above components, components generally blended with this type of resin composition within a range that does not impair the effects of the present embodiment, for example, a coupling agent; Release agents such as synthetic waxes, natural waxes, higher fatty acids, and metal salts of higher fatty acids; coloring agents such as carbon black and cobalt blue; low stress imparting agents such as silicone oil and silicone rubber; hydrotalcites; And the like.
  • a coupling agent such as synthetic waxes, natural waxes, higher fatty acids, and metal salts of higher fatty acids
  • coloring agents such as carbon black and cobalt blue
  • low stress imparting agents such as silicone oil and silicone rubber
  • hydrotalcites hydrotalcites
  • Coupling agents such as epoxy silane, amino silane, ureido silane, vinyl silane, alkyl silane, organic titanate and aluminum alcoholate can be used as the coupling agent.
  • One type of these coupling agents may be used, or two or more types may be mixed and used.
  • aminosilane-based coupling agents are preferable from the viewpoint of moldability, flame retardancy, curability, etc., and particularly, ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, ⁇ -aminopropylmethyldimethoxysilane , ⁇ -aminopropylmethyldiethoxysilane, ⁇ -phenylaminopropyltrimethoxysilane and the like.
  • the content of the coupling agent may be in the range of 0.01 to 3% by mass or 0.1 to 1% by mass with respect to the total amount of the sealing resin composition.
  • the content of the coupling agent is 0.01% by mass or more, the moldability of the sealing resin composition can be improved, and when the content is 3% by mass or less, foaming occurs during molding of the sealing resin composition. And the occurrence of voids or surface swelling in the molded product can be reduced.
  • the sealing resin composition of the present embodiment may not include a solvent from the viewpoint of suppressing blocking.
  • the sealing resin composition does not contain a solvent, there is no possibility that the reliability may be degraded due to the remaining solvent when the semiconductor element is sealed.
  • the sealing resin composition of the present embodiment can be obtained by a known method for producing a sealing resin composition, and can be prepared, for example, as follows. First, the above-mentioned (A) epoxy resin, (B) phenolic resin curing agent, (C) curing accelerator, (D) inorganic filler, and the above-mentioned various components to be blended as required are sufficiently mixed by a mixer or the like. After (dry blending), the mixture is melt-kneaded by a kneading device such as a hot roll or a kneader, and compressed between pressurizing members to form a sheet.
  • a kneading device such as a hot roll or a kneader
  • the sealing resin composition is rolled to a thickness of 150 to 1000 ⁇ m by a roll or a hot press while being softened by heating.
  • the heating temperature when rolling the sealing resin composition is usually about 60 to 150 ° C. When the heating temperature is 60 ° C. or higher, rolling becomes easy, and when the heating temperature is 150 ° C. or lower, the curing reaction proceeds appropriately and the moldability can be improved.
  • the thickness of the sheet is 150 to 1000 ⁇ m, may be 150 to 700 ⁇ m, may be 150 to 500 ⁇ m, and may be 200 to 400 ⁇ m.
  • the flake-shaped sealing resin composition having the above-mentioned specific shape can be obtained by pulverizing the sheet.
  • fine particles passing through a sieve having a nominal opening of 150 ⁇ m can be made less likely to be generated by classification using a JIS standard sieve (JIS Z8801-1: 2006).
  • JIS Z8801-1 JIS Z8801-1: 2006.
  • the aforementioned sealing resin composition a contained in the flake-shaped sealing resin composition of the present embodiment can be reduced to 5% by mass or less.
  • the thickness of the sheet can be determined as an average value by measuring the thickness of the sheet at 50 points using a micrometer, for example.
  • the pulverization method is not particularly limited, and a general pulverizer such as a speed mill, a cutting mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a cutter mill, a grinder mill, or the like can be used. Among them, a speed mill can be used.
  • the encapsulating resin composition may be formed into a flat string shape using an extruder, and may be pulverized by a hot cut method of cutting into a predetermined length with a cutter or the like.
  • the pulverized product can then be prepared by sieving classification or air classification as a flake-like aggregate having a predetermined particle size distribution with the properties adjusted.
  • the flake-form sealing resin composition thus obtained can have a gap ratio represented by the following formula (1) of 60% or less, 50% or less, and 40% or less. can do.
  • Gap ratio (%) ⁇ 1 ⁇ (resin supply area / cavity area) ⁇ ⁇ 100 (1)
  • the gap ratio indicates an area ratio that is not covered with the sealing resin composition when the sealing resin composition is supplied into the cavity.
  • the cavity area is the effective area at the bottom of the molding die, and the resin supply area indicates the area covered by the sealing resin composition.
  • the gap ratio is 60% or less, the melting property of the sealing resin composition is improved, the filling property is improved, and the generation of voids and the like in the cured product can be reduced. Further, the wire flow can be sufficiently reduced.
  • the semiconductor device of the present embodiment can be manufactured by sealing a semiconductor element by compression molding using the flake-shaped sealing resin composition.
  • the sealing resin composition is supplied into the cavity of the lower die.
  • the upper mold and the lower mold are clamped at a required clamping pressure, and the semiconductor element is immersed in the sealing resin composition heated and melted in the lower mold cavity.
  • the heat-melted sealing resin composition in the lower mold cavity is pressed by the cavity bottom member, and compression molding is performed by applying a required pressure under reduced pressure.
  • the molding conditions may be a temperature of 120 ° C. to 200 ° C. and a pressure of 2 MPa to 20 MPa.
  • FIG. 1 shows an example of the semiconductor device of the present disclosure obtained as described above, and an adhesive layer 3 may be interposed between a lead frame 1 such as a copper frame and a semiconductor element 2. . Further, the electrode 4 on the semiconductor element 2 and the lead portion 5 of the lead frame 1 are connected by a bonding wire 6, and these are cured products (sealing resin) 7 of the sealing resin composition of the present disclosure. Is sealed.
  • the semiconductor element is sealed with the sealing resin composition having the specific shape described above, the occurrence of wire flow or the like during molding is reduced. In addition, moldability is improved, and a highly reliable semiconductor device can be obtained.
  • the sealing resin composition having the above specific shape is used, the thickness of the sealing material on the semiconductor element of the semiconductor device may be 200 ⁇ m or less, 150 ⁇ m or less, or 100 ⁇ m or less. it can.
  • the sealing resin composition having the above-mentioned specific shape is used, the sealing resin composition is scattered when supplied to the cavity of the lower mold, or is heated and melted under reduced pressure. Since so-called “resin leakage” in which resin is scattered is reduced, a highly reliable semiconductor device can be obtained.
  • the semiconductor element sealed in the semiconductor device of the present disclosure is not particularly limited, and examples thereof include an IC, an LSI, a diode, a thyristor, and a transistor.
  • the present invention is useful in the case of a semiconductor device having a thickness of 0.1 mm or more and 1.5 mm or less after sealing, in which a wire flow is likely to occur.
  • Examples 1 to 7, and Comparative Examples 1 to 4 The components of the types and compounding amounts shown in Table 1 were mixed at room temperature (25 ° C.) using a mixer, and then heated and kneaded at 80 to 130 ° C. using a hot roll. Rolling was performed using a roll at a resin temperature of 60 to 110 ° C., followed by cooling to obtain a sheet having the thickness shown in Table 1. The obtained sheet was pulverized using a speed mill, and a sealing resin composition was prepared using three types of JIS standard sieves (JIS Z8801-1: 2006 regulations) (mesh size: 150 ⁇ m, 1 mm, 2 mm). Furthermore, a semiconductor chip was sealed using the obtained sealing resin composition.
  • JIS standard sieves JIS Z8801-1: 2006 regulations
  • a 50 mm ⁇ 50 mm ⁇ 0.54 mm FBGA (Fine pitch Ball Grid Array) is compressed using a sealing resin composition under the conditions of a mold temperature of 175 ° C., a molding pressure of 8.0 MPa, and a curing time of 2 minutes. After molding, post-curing was performed at 175 ° C. for 4 hours to produce a semiconductor device.
  • the thickness of the obtained sealing resin composition was measured at 50 points using an optical microscope (magnification: 200 times), and the average value of the measured 50 points was taken as the thickness of the sealing resin composition. Also, when 50 sealing resin compositions obtained in Examples 1 to 7 and Comparative Examples 1 and 4 were observed by an optical microscope (magnification: 200 times), all of them were broken in the thickness direction. It was confirmed that 80% by mass or more of the sealing resin composition had a pair of parallel planes, and the distance (thickness) between the pair of planes was in the range of 150 to 1000 ⁇ m.
  • Epoxy resin / epoxy resin 1 NC-3000 (trade name, manufactured by Nippon Kayaku Co., Ltd .; epoxy equivalent: 273, softening point: 58 ° C.)
  • Epoxy resin 2 YX-4000H (trade name, manufactured by Mitsubishi Chemical Corporation; epoxy equivalent: 193, softening point: 105 ° C)
  • Phenolic resin curing agent / phenol resin 1 MEH-7800M (trade name; hydroxyl equivalent: 175, manufactured by Meiwa Kasei Co., Ltd.)
  • -Phenol resin 2 BRG-557 (manufactured by Showa Denko KK, trade name; hydroxyl equivalent: 104)
  • Inorganic filler / fused silica 1 MSR-8030 (trade name, manufactured by Tatsumori Co., Ltd .; average particle size: 12 ⁇ m)
  • Fused silica 2 SC-4500SQ (trade name; average particle size: 1 ⁇ m, manufactured by Admatechs Co., Ltd.)
  • Gap ratio (%) (1 ⁇ (resin supply area / cavity area)) ⁇ 100 (1)
  • the void ratio represents the area ratio when the sealing resin composition is not supplied to the cavity when the sealing resin composition is supplied into the cavity, and the cavity area is the effective area of the bottom of the molding die.
  • the resin supply area indicates the area covered with the sealing resin composition.
  • FIG. 2 shows a binarized image when the gap ratio is calculated in Example 1
  • FIG. 3 shows a binarized image when the gap ratio is calculated in Comparative Example 3.
  • High temperature storage reliability highly accelerated life test: HAST
  • the sealing resin composition of this example had good filling properties during molding and extremely low wire flow. Although there is no difference in the value of the spiral flow between the example and the comparative example, it is found that the example has a lower void ratio than the comparative example.
  • FIG. 2 shows a binarized image when the gap ratio of Example 1 is calculated
  • FIG. 3 shows a binarized image when the gap ratio of Comparative Example 3 is calculated. 2 and 3, white portions indicate portions in the cavity that are not covered with the sealing resin composition, and black portions indicate portions in the cavity that are covered with the sealing resin composition. 2 and FIG. 3, it can be seen that the sealing resin composition in Example 1 was uniformly filled in the cavity and the void ratio was lower in Example 1 than in Comparative Example 3.
  • the sealing resin composition of the present invention can be supplied thinly and uniformly into a mold because of the flake shape. It is obtained.
  • the semiconductor device manufactured using the sealing resin composition has obtained good results in any of the MSL test, the pressure cooker test, and the highly accelerated life test, It was confirmed that the device had high reliability.
  • the sealing resin composition of the present invention can be thinly and uniformly supplied into a mold due to its flake shape, so that it has excellent moldability and reduces wire flow during molding. Therefore, the sealing resin has a small thickness and is useful as a sealing material for semiconductor elements connected by long and thin wires, and a highly reliable resin-sealed semiconductor device can be manufactured.

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Abstract

A flaky resin composition for encapsulation which comprises (A) an epoxy resin, (B) a phenolic-resin hardener, (C) a hardening accelerator, and (D) an inorganic filler, characterized in that 80 mass% or more of the flaky resin composition for encapsulation is accounted for by a flat-surface-containing resin composition which has a pair of flat parallel surfaces, the distance between the pair of flat surfaces being 150-1,000 μm, and that the content of a flaky resin composition for encapsulation therein which, in classification with JIS standard sieves, passes through a sieve having a nominal opening size of 150 μm is 5 mass% or less and the content of a flaky resin composition for encapsulation therein which, in said classification, does not pass through a sieve having a nominal opening size of 2 mm is 5 mass% or less.

Description

フレーク状封止用樹脂組成物、および半導体装置Flake-shaped sealing resin composition and semiconductor device
　本開示は、フレーク状の半導体封止用樹脂組成物、および半導体装置に関する。 The present disclosure relates to a flake-shaped resin composition for encapsulating a semiconductor and a semiconductor device.
　トランジスタ、ＩＣ（Integrated Circuit）、ＬＳＩ（Large Scale Integration）等の半導体装置における封止材料は、エポキシ樹脂に硬化剤および／又は硬化促進剤、シリカ粉末等の無機充填材、着色剤等を配合した樹脂組成物が用いられている。
　従来、このような封止材料を用いた封止プロセスは、トランスファ成形が一般的であった。しかし、近年、電子部品のプリント配線板への高密度実装化に伴い、半導体装置の主流はピン挿入型のパッケージから表面実装型のパッケージに移っている。さらに、表面実装型パッケージは薄型化・小型化が進んでいる。薄型化・小型化された表面実装型パッケージでは、半導体素子のパッケージに対する占有体積も大きくなり、半導体素子を覆う封止樹脂の肉厚は薄くなる。また、半導体素子の多機能化、大容量化に伴い、チップ面積の増大、多ピン化が進んでいる。さらには電極パッド数の増加によって、パッドピッチ、パッドサイズの縮小化、いわゆる狭パッドピッチ化も進んでいる。 As a sealing material for semiconductor devices such as transistors, ICs (Integrated Circuits), and LSIs (Large Scale Integration), a curing agent and / or a curing accelerator, an inorganic filler such as silica powder, a coloring agent, and the like are mixed with an epoxy resin. A resin composition is used.
Conventionally, transfer molding has been generally used as a sealing process using such a sealing material. However, in recent years, with the high density mounting of electronic components on printed wiring boards, the mainstream of semiconductor devices has shifted from pin insertion type packages to surface mount type packages. Furthermore, surface mount packages are becoming thinner and smaller. In a thinner and smaller surface mount package, the volume occupied by the semiconductor element in the package increases, and the thickness of the sealing resin covering the semiconductor element decreases. Also, with the increase in the number of functions and the capacity of semiconductor elements, the chip area and the number of pins are increasing. Further, with the increase in the number of electrode pads, the pad pitch and the pad size have been reduced, that is, the so-called narrow pad pitch has been advanced.
　一方、半導体素子を搭載する基板は、半導体素子ほどの電極パッドの狭ピッチ化ができない。そのため、半導体素子から引き出すボンディングワイヤを長くしたり、細線化したりすることにより多端子化に対応している。しかしながら、ワイヤが細くなると、後の樹脂封止工程でワイヤが樹脂の注入圧力により流されやすくなる。特に、サイドゲート方式のトランスファ成形ではこの傾向が著しい。 On the other hand, the pitch of the electrode pads on the substrate on which the semiconductor element is mounted cannot be as narrow as that of the semiconductor element. Therefore, by increasing the length of the bonding wire drawn from the semiconductor element or reducing the thickness of the bonding wire, the number of terminals can be increased. However, when the wire becomes thinner, the wire is more likely to flow due to the injection pressure of the resin in a later resin sealing step. In particular, this tendency is remarkable in the side gate transfer molding.
　そこで、トランスファ成形に代わる封止プロセスとして、圧縮成形法が用いられるようになってきている（例えば、特許文献１参照）。この方法は、被封止物（例えば、半導体素子を実装した基板等）を上型に吸着させる一方、これに対向させるように、下型に粉粒状樹脂（封止材料）を供給し、下型を上昇させながら、被封止物と封止材料を加圧して封止成形するものである。圧縮成形法によれば、溶融した封止材料が被封止物の主面と略平行な方向に流動するため、流動量を少なくすることができ、樹脂の流れによる被封止物（例えば、半導体素子を実装した基板におけるワイヤや配線等）の変形・破損を低減させることが期待できる。 Therefore, a compression molding method has been used as a sealing process instead of transfer molding (for example, see Patent Document 1). In this method, an object to be sealed (for example, a substrate on which a semiconductor element is mounted) is adsorbed on an upper mold, and a powdery resin (sealing material) is supplied to a lower mold so as to face the upper mold. While the mold is being raised, the object to be sealed and the sealing material are pressurized and sealed. According to the compression molding method, since the molten sealing material flows in a direction substantially parallel to the main surface of the object to be sealed, the amount of flow can be reduced, and the object to be sealed (for example, It is expected that deformation and breakage of wires, wirings, and the like on a substrate on which a semiconductor element is mounted) can be reduced.
　しかしながら、従来のトランスファ成形に用いる封止材料を圧縮成形法に適用しても、その充填性の低さ等から、上記のような所期の効果を十分に得ることはできなかった。圧縮成形法に適した封止材料としては、例えば、特許文献２にはエポキシ樹脂、硬化剤、硬化促進剤、無機充填材等を含有し、粒径１００μｍ～３ｍｍの粒子が８５質量％以上である粒度分布を有する粉粒状の樹脂組成物が開示されている。特許文献３には、圧縮度を６～１１％の範囲内に設定することにより、ホッパ等への付着や架橋現象を防止し、流動性の安定化、計量精度の向上を図った粉粒状半導体封止材料が開示されている。特許文献４には固めかさ密度を０．８ｇ／ｃｍ３以上、１．１ｇ／ｃｍ３以下とすることにより、搬送性や秤量精度等を向上させた顆粒状の樹脂組成物が開示されている。 However, even if the sealing material used in the conventional transfer molding is applied to the compression molding method, the above-mentioned expected effects cannot be sufficiently obtained due to the low filling property and the like. As a sealing material suitable for a compression molding method, for example, Patent Document 2 contains an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and the like. A powdery resin composition having a certain particle size distribution is disclosed. Patent Document 3 discloses a powdery semiconductor in which the degree of compression is set within a range of 6 to 11%, thereby preventing adhesion to a hopper or the like and a crosslinking phenomenon, stabilizing fluidity, and improving measurement accuracy. A sealing material is disclosed. Patent Literature 4 discloses a granular resin composition in which the bulk density is adjusted to 0.8 g / cm 3 or more and 1.1 g / cm 3 or less to improve transportability, weighing accuracy, and the like. .
特開２００８－２７９５９９号公報JP 2008-279599 A 特開２０１１－１５３１７３号公報JP 2011-153173 A 特開２０００－２３２１８８号公報JP 2000-232188 A 特開２００８－３０３３６６号公報JP 2008-303366A
　しかしながら、上記特許文献２～４に記載の封止材料は、いずれも封止樹脂厚が薄く、また、細くかつ長いボンディングワイヤによって接続された半導体素子を封止する材料として十分なものではない。特に、ワイヤの変形・破損（ワイヤ流れ）の低減や成形性の改善等の点で十分ではなかった。
　さらに、半導体装置の大容量化、および高機能化に伴い、半導体素子を複数積層する場合も増加している。半導体素子を複数積層すると、半導体素子上の封止材の肉厚が薄くなるため、半導体素子上に未充填部分が生じる。また、半導体素子を完全に樹脂成形物で封止しないと、信頼性試験で十分な特性を確保することができない。 However, the sealing materials described in Patent Documents 2 to 4 have a small sealing resin thickness, and are not sufficient as materials for sealing semiconductor elements connected by thin and long bonding wires. In particular, it was not sufficient in terms of reducing deformation and breakage (wire flow) of the wire and improving the formability.
Further, as the capacity and the function of a semiconductor device are increased, the number of stacked semiconductor elements is increasing. When a plurality of semiconductor elements are stacked, an unfilled portion occurs on the semiconductor element because the thickness of the sealing material on the semiconductor element is reduced. In addition, if the semiconductor element is not completely sealed with a resin molded product, sufficient characteristics cannot be secured in a reliability test.
　本開示は、圧縮成形法に使用でき、成形時のワイヤ流れを十分に低減し、かつ成形性を十分に向上させることができるフレーク状封止用樹脂組成物、及び当該封止用樹脂組成物を用いて封止された高い信頼性を有する半導体装置を提供する。 The present disclosure can be used for a compression molding method, can sufficiently reduce wire flow during molding, and can sufficiently improve moldability, and a flake-shaped sealing resin composition, and the sealing resin composition To provide a highly reliable semiconductor device sealed by using the semiconductor device.
　本発明者らは、封止用樹脂組成物が後述するような特定の形状を有すると、圧縮成形法におけるワイヤ流れの低減や良好な成形性が得られることを見出した。 The present inventors have found that when the sealing resin composition has a specific shape as described later, it is possible to reduce wire flow and obtain good formability in the compression molding method.
　すなわち、本開示は、以下の[１]～[５]を提供する。
［１］（Ａ）エポキシ樹脂、（Ｂ）フェノール樹脂硬化剤、（Ｃ）硬化促進剤、および（Ｄ）無機充填材を含有するフレーク状封止用樹脂組成物であって、
　前記フレーク状封止用樹脂組成物の８０質量％以上が、平行な一対の平面を有し、当該一対の平面間の距離が１５０～１０００μｍである平行面含有樹脂組成物であり、
　前記フレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩を用いた分級により、公称目開き１５０μｍの篩を通過するフレーク状封止用樹脂組成物が５質量％以下、及び公称目開き２ｍｍの篩を通過しないフレーク状封止用樹脂組成物が５質量％以下であるフレーク状封止用樹脂組成物。
［２］前記フレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩を用いた分級により、公称目開き１５０μｍを超え１ｍｍ以下の篩を通過するフレーク状封止用樹脂組成物が２０質量％以上である上記［１］に記載のフレーク状封止用樹脂組成物。
［３］下記式（１）で表される隙間率が６０％以下である上記［１］又は［２］に記載のフレーク状封止用樹脂組成物。
　　隙間率（％）＝｛１－（樹脂供給面積／キャビティ面積）}×１００・・・式（１）
（ここで、隙間率はキャビティ内へ封止用樹脂組成物を供給した時の、当該封止用樹脂組成物により被覆されていない面積比率を表し、キャビティ面積は成形金型の底部の有効面積であり、樹脂供給面積は封止用樹脂組成物によって被覆されている面積を示す。）
［４］上記［１］乃至［３］のいずれかに記載のフレーク状封止用樹脂組成物を用いて圧縮成形により半導体素子を封止してなる半導体装置。
［５］前記半導体装置の半導体素子上の封止材の厚みが２００μｍ以下である上記［４］に記載の半導体装置。 That is, the present disclosure provides the following [1] to [5].
[1] A flake-shaped sealing resin composition containing (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a curing accelerator, and (D) an inorganic filler,
80% by mass or more of the flake-shaped sealing resin composition has a pair of parallel planes, and a distance between the pair of planes is 150 to 1000 μm, and is a parallel plane-containing resin composition;
By classification using a JIS standard sieve, the flake-shaped sealing resin composition passing through a sieve having a nominal opening of 150 μm contained in the flake-shaped sealing resin composition is 5% by mass or less, and the nominal opening is A flake-shaped sealing resin composition that does not pass through a 2 mm sieve and is 5% by mass or less.
[2] According to classification using a JIS standard sieve, the flake-shaped sealing resin composition passing through a sieve having a nominal opening of more than 150 μm and 1 mm or less contained in the flake-shaped sealing resin composition is 20 mass%. % Of the flake-form sealing resin composition according to the above [1].
[3] The resin composition for sealing flakes according to the above [1] or [2], wherein the void ratio represented by the following formula (1) is 60% or less.
Gap ratio (%) = {1− (resin supply area / cavity area)} × 100 (1)
(Here, the void ratio indicates an area ratio not covered by the sealing resin composition when the sealing resin composition is supplied into the cavity, and the cavity area is an effective area at the bottom of the molding die. , And the resin supply area indicates the area covered with the sealing resin composition.)
[4] A semiconductor device obtained by sealing a semiconductor element by compression molding using the flake-shaped sealing resin composition according to any one of [1] to [3].
[5] The semiconductor device according to [4], wherein the thickness of the sealing material on the semiconductor element of the semiconductor device is 200 μm or less.
　本開示によれば、圧縮成形法に用いられ、成形時のワイヤ流れを十分に低減し、かつ成形性を十分に向上させることができるフレーク状封止用樹脂組成物、及び当該封止用樹脂組成物を用いて封止された高い信頼性を有する半導体装置を提供することができる。 According to the present disclosure, a flake-shaped sealing resin composition, which is used in a compression molding method, can sufficiently reduce wire flow during molding, and can sufficiently improve moldability, and the sealing resin A highly reliable semiconductor device sealed with the composition can be provided.
本開示の一実施形態の半導体装置を示す断面図である。1 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure. 実施例１の隙間率を算出した際の二値化画像である。6 is a binarized image when a gap ratio is calculated according to the first embodiment. 比較例３の隙間率を算出した際の二値化画像である。13 is a binarized image when the gap ratio of Comparative Example 3 is calculated.
　以下、本開示について、一実施形態であるフレーク状封止用樹脂組成物、半導体装置及び半導体装置の製造方法を参照しながら詳細に説明する。
［フレーク状封止用樹脂組成物］
　本実施形態のフレーク状封止用樹脂組成物（以下、単に封止用樹脂組成物ともいう）は、（Ａ）エポキシ樹脂、（Ｂ）フェノール樹脂硬化剤、（Ｃ）硬化促進剤、および（Ｄ）無機充填材を含有するフレーク状封止用樹脂組成物であって、
　前記フレーク状封止用樹脂組成物の８０質量％以上が、平行な一対の平面を有し、当該一対の平面間の距離が１５０～１０００μｍである平行面含有樹脂組成物であり、
　前記フレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩を用いた分級により、公称目開き１５０μｍの篩を通過するフレーク状封止用樹脂組成物が５質量％以下、及び公称目開き２ｍｍの篩を通過しないフレーク状封止用樹脂組成物が５質量％以下である。 Hereinafter, the present disclosure will be described in detail with reference to a flake-shaped sealing resin composition, a semiconductor device, and a method for manufacturing a semiconductor device according to an embodiment.
[Flame-shaped sealing resin composition]
The flake-shaped sealing resin composition of the present embodiment (hereinafter, also simply referred to as a sealing resin composition) includes (A) an epoxy resin, (B) a phenol resin curing agent, (C) a curing accelerator, and ( D) A flake-shaped sealing resin composition containing an inorganic filler,
80% by mass or more of the flake-shaped sealing resin composition has a pair of parallel planes, and a distance between the pair of planes is 150 to 1000 μm, and is a parallel plane-containing resin composition;
By classification using a JIS standard sieve, the flake-shaped sealing resin composition passing through a sieve having a nominal opening of 150 μm contained in the flake-shaped sealing resin composition is 5% by mass or less, and the nominal opening is The content of the flake-shaped sealing resin composition that does not pass through a 2 mm sieve is 5% by mass or less.
　ここで、「フレーク状」とは扁平状、薄片状、鱗片状等の形状を含む。本実施形態のフレーク状封止用樹脂組成物は、当該封止用樹脂組成物の８０質量％以上が、平行な一対の平面を有し、当該一対の平面間の距離（以下、厚みともいう）が１５０～１０００μｍである平行面含有樹脂組成物である。
　ここで、「平行」とは個々の封止用樹脂組成物の平均厚みに対する当該封止用樹脂組成物の最大厚みと最小厚みとの差の割合が５％以下であることを意味する。
　上記封止用樹脂組成物の厚みが１５０μｍ未満では静電気の影響を受け凝集しやすくなる。凝集した封止用樹脂組成物は、熱が均一に伝わりにくく溶け性が低下するおそれがある。また、当該封止用樹脂組成物の厚みが１０００μｍを超えると熱が均一に伝わりにくく溶け性が低下するおそれがある。このような観点から、封止用樹脂組成物の厚みは、１５０～７００μｍであってもよく、１５０～５００μｍであってもよく、２００～４００μｍであってもよい。
　なお、上記フレーク状封止用樹脂組成物の厚みは、例えば、光学顕微鏡（倍率：２００倍）を用いて５０個の封止用樹脂組成物の厚みを測定し、その平均値として求めることができる。 Here, the “flake shape” includes shapes such as a flat shape, a flake shape, and a scale shape. In the flake-shaped sealing resin composition of the present embodiment, 80% by mass or more of the sealing resin composition has a pair of parallel planes, and the distance between the pair of planes (hereinafter, also referred to as thickness). ) Is a parallel plane-containing resin composition having a particle size of 150 to 1000 μm.
Here, “parallel” means that the ratio of the difference between the maximum thickness and the minimum thickness of the sealing resin composition to the average thickness of each sealing resin composition is 5% or less.
When the thickness of the encapsulating resin composition is less than 150 μm, it is likely to be aggregated under the influence of static electricity. The agglomerated sealing resin composition may be less likely to transmit heat uniformly, and may have lower solubility. If the thickness of the sealing resin composition exceeds 1000 μm, heat may not be transmitted uniformly and the melting property may be reduced. From such a viewpoint, the thickness of the sealing resin composition may be 150 to 700 μm, 150 to 500 μm, or 200 to 400 μm.
The thickness of the flake-shaped sealing resin composition can be determined, for example, by measuring the thickness of 50 sealing resin compositions using an optical microscope (magnification: 200 times) and calculating the average value. it can.
　また、本実施形態のフレーク状封止用樹脂組成物中に含まれる上述の形状を有する封止用樹脂組成物（平行面含有樹脂組成物）の割合は、９０質量％以上であってもよく、９５質量％以上であってもよく、１００質量％であってもよい。
　なお、本実施形態のフレーク状封止用樹脂組成物は、フレーク状ではない樹脂組成物、上述の形状を有さない樹脂組成物を含んでもよい。本実施形態のフレーク状封止用樹脂組成物がフレーク状ではない樹脂組成物、上述の形状を有さない樹脂組成物を含む場合、その含有量は、当該フレーク状封止用樹脂組成物全量に対し２０質量％以下であってもよく、１０質量％以下であってもよく、５質量％以下であってもよく、含まなくてもよい。 In addition, the proportion of the sealing resin composition having the above-mentioned shape (parallel plane-containing resin composition) contained in the flake-shaped sealing resin composition of the present embodiment may be 90% by mass or more. , 95% by mass or more, or 100% by mass.
The flake-shaped sealing resin composition of the present embodiment may include a resin composition that is not flake-shaped and a resin composition that does not have the above-described shape. When the flake-shaped sealing resin composition of the present embodiment includes a non-flake-shaped resin composition and a resin composition not having the above-mentioned shape, the content is the total amount of the flake-shaped sealing resin composition. May be 20% by mass or less, 10% by mass or less, 5% by mass or less, or may not be contained.
　本実施形態のフレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩（ＪＩＳ　Ｚ８８０１－１：２００６規定）を用いた分級により、公称目開き１５０μｍの篩を通過するフレーク状封止用樹脂組成物（以下、封止用樹脂組成物ａともいう）が５質量％以下、及び公称目開き２ｍｍの篩を通過しないフレーク状封止用樹脂組成物（以下、封止用樹脂組成物ｂともいう）が５質量％以下である。封止用樹脂組成物ａの含有量が５質量％を超えると、圧縮成形用金型に供給する際に、当該封止用樹脂組成物ａが舞い上がりやすく、飛散した当該封止用樹脂組成物ａによる汚染や、計量不良等が生ずるおそれがある。このような観点から、フレーク状封止用樹脂組成物中に含まれる封止用樹脂組成物ａは、３質量％以下であってもよく、２質量％以下であってもよい。また、封止用樹脂組成物ｂの含有量が５質量％を超えると、成形時にワイヤの変形および破損が生じるおそれがあり、また、硬化物にボイドが発生するおそれがある。このような観点から、フレーク状封止用樹脂組成物中に含まれる封止用樹脂組成物ｂは、３質量％以下であってもよく、２質量％以下であってもよい。 The flake-form sealing resin contained in the flake-form sealing resin composition of the present embodiment, which passes through a sieve having a nominal opening of 150 μm by classification using a JIS standard sieve (JIS Z8801-1: 2006). The composition (hereinafter, also referred to as a sealing resin composition a) is 5% by mass or less, and a flake-shaped sealing resin composition that does not pass through a sieve having a nominal opening of 2 mm (hereinafter, also referred to as a sealing resin composition b). Is 5% by mass or less. When the content of the encapsulating resin composition a exceeds 5% by mass, the encapsulating resin composition a is liable to soar when supplied to a compression molding die, and the encapsulating resin composition is scattered. There is a possibility that contamination due to a and poor measurement may occur. From such a viewpoint, the sealing resin composition a contained in the flake-shaped sealing resin composition may be 3% by mass or less, or 2% by mass or less. When the content of the sealing resin composition b exceeds 5% by mass, the wire may be deformed and damaged at the time of molding, and voids may be generated in the cured product. From such a viewpoint, the sealing resin composition b contained in the flake-shaped sealing resin composition may be 3% by mass or less, or 2% by mass or less.
　また、本実施形態のフレーク状封止用樹脂組成物は、ＪＩＳ標準篩（ＪＩＳ　Ｚ８８０１－１：２００６規定）を用いた分級により、公称目開き１５０μｍを超え２ｍｍ以下の篩を通過するフレーク状封止用樹脂組成物を含んでもよく、ＪＩＳ標準篩（ＪＩＳ　Ｚ８８０１－１：２００６規定）を用いた分級により、公称目開き１５０μｍを超え１ｍｍ以下の篩を通過するフレーク状封止用樹脂組成物(以下、封止用樹脂組成物ｃともいう）を含んでもよい。ここで、公称目開き１５０μｍを超え１ｍｍ以下の篩を通過するフレーク状封止用樹脂組成物とは、公称目開き１５０μｍの篩を通過せず、公称目開き１ｍｍの篩を通過するフレーク状封止用樹脂組成物のことである。封止用樹脂組成物ｃの含有量としては、２０質量％以上であってもよく、４０質量％以上であってもよく、６０質量％以上であってもよい。封止用樹脂組成物ｃを２０質量％以上含有すると充填性が良好となり、硬化物にボイド等の発生を低減することができる。また、上限値は特に限定されず、１００質量％であってもよく、９０質量％であってもよい。 The resin composition for sealing in the form of flakes of the present embodiment is classified by using a JIS standard sieve (JIS Z8801-1: 2006) to pass through a sieve having a nominal opening of more than 150 μm and 2 mm or less. The resin composition for sealing may contain a resin composition for stopping, and is classified by using a JIS standard sieve (JIS Z8801-1: 2006) to pass through a sieve having a nominal opening of more than 150 μm and 1 mm or less. Hereinafter, it may be referred to as a sealing resin composition c). Here, the flaky sealing resin composition that passes through a sieve having a nominal opening of more than 150 μm and 1 mm or less refers to a flake-like sealing that does not pass through a sieve with a nominal opening of 150 μm but passes through a sieve with a nominal opening of 1 mm. It means a resin composition for stopping. The content of the sealing resin composition c may be 20% by mass or more, 40% by mass or more, or 60% by mass or more. When the sealing resin composition c is contained in an amount of 20% by mass or more, the filling property is improved, and the occurrence of voids and the like in the cured product can be reduced. The upper limit is not particularly limited, and may be 100% by mass or 90% by mass.
　本実施形態のフレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩（ＪＩＳ　Ｚ８８０１－１：２００６規定）を用いた分級により、公称目開き１ｍｍを超え２ｍｍ以下の篩を通過するフレーク状封止用樹脂組成物(以下、封止用樹脂組成物ｄともいう）の含有量は、充填性を高め、ボイドの発生を低減する観点から、１０～７５質量％であってもよく、１５～５０質量％であってもよく、１８～４０質量％であってもよい。 The flakes passing through a sieve having a nominal opening of more than 1 mm and 2 mm or less by classification using a JIS standard sieve (JIS Z8801-1: 2006) contained in the flake sealing resin composition of the present embodiment. The content of the encapsulating resin composition (hereinafter, also referred to as encapsulating resin composition d) may be 10 to 75% by mass from the viewpoint of increasing the filling property and reducing the generation of voids. It may be 50 to 50% by mass, or 18 to 40% by mass.
〔（Ａ）エポキシ樹脂〕
　本実施形態で用いられる（Ａ）成分のエポキシ樹脂は、１分子中に２個以上のエポキシ基を有するものであれば、分子構造、分子量等に制限されることなく一般に電子部品の封止材料として使用されているものを広く用いることができる。
　（Ａ）成分のエポキシ樹脂としては、例えば、ビフェニル型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、トリアジン核含有エポキシ樹脂等の複素環型エポキシ樹脂、スチルベン型二官能エポキシ樹脂、ナフタレン型エポキシ樹脂、縮合環芳香族炭化水素変性エポキシ樹脂、脂環型エポキシ樹脂などが挙げられる。なかでも、ビフェニル型エポキシ樹脂であってもよい。
　これらのエポキシ樹脂は１種を使用してもよく、２種以上を混合して使用してもよい。 [(A) epoxy resin]
The epoxy resin of the component (A) used in the present embodiment is generally a sealing material for electronic parts without being limited by molecular structure, molecular weight, etc., as long as it has two or more epoxy groups in one molecule. Can be widely used.
Examples of the epoxy resin (A) include biphenyl type epoxy resin, cresol novolak type epoxy resin, phenol novolak type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and dicyclopentadiene. Heterocyclic epoxy resin such as epoxy resin, triphenolmethane epoxy resin, epoxy resin containing triazine nucleus, stilbene type bifunctional epoxy resin, naphthalene type epoxy resin, condensed ring aromatic hydrocarbon modified epoxy resin, alicyclic epoxy Resins. Among them, a biphenyl type epoxy resin may be used.
These epoxy resins may be used singly or as a mixture of two or more.
　（Ａ）成分のエポキシ樹脂の軟化点は、封止用樹脂組成物のハンドリング性、および成形時の溶融粘度の観点から、４０～１３０℃であってもよく、５０～１１０℃であってもよい。
　なお、本明細書における軟化点とは、「環球式軟化点」を指し、ＡＳＴＭ　Ｄ３６に準拠して測定された値をいう。 The softening point of the epoxy resin (A) may be from 40 to 130 ° C. or from 50 to 110 ° C. from the viewpoint of the handleability of the sealing resin composition and the melt viscosity during molding. Good.
In addition, the softening point in this specification refers to a "ring and ball softening point" and refers to a value measured in accordance with ASTM D36.
　（Ａ）成分のエポキシ樹脂の市販品を例示すると、例えば、三菱ケミカル（株）製のＹＸ－４０００（エポキシ当量１８５、軟化点１０５℃）、同ＹＸ－４０００Ｈ（エポキシ当量１９３、軟化点１０５℃）、日本化薬（株）製のＮＣ－３０００（エポキシ当量２７３、軟化点５８℃）、同ＮＣ－３０００Ｈ（エポキシ当量２８８、軟化点９１℃）（以上、いずれも商品名）等が挙げられる。 Examples of commercially available epoxy resins of the component (A) include, for example, YX-4000 (epoxy equivalent 185, softening point 105 ° C) and YX-4000H (epoxy equivalent 193, softening point 105 ° C) manufactured by Mitsubishi Chemical Corporation. ), Nippon Kayaku Co., Ltd., NC-3000 (epoxy equivalent 273, softening point 58 ° C), NC-3000H (epoxy equivalent 288, softening point 91 ° C) (all of which are trade names). .
〔（Ｂ）フェノール樹脂硬化剤〕
　本実施形態で用いられる（Ｂ）成分のフェノール樹脂硬化剤は、１分子当たり２個以上のフェノール性水酸基を有し、上記（Ａ）成分のエポキシ樹脂を硬化させることができるものである。電子部品の封止材料として一般に用いられるものであれば特に制限されることなく使用できる。
　（Ｂ）成分のフェノール樹脂硬化剤としては、具体的には、フェノール、アルキルフェノール等のフェノール類とホルムアルデヒド又はパラホルムアルデヒドを反応させて得られるフェノールノボラック樹脂やクレゾールノボラック樹脂等のノボラック型フェノール樹脂、これらのノボラック型フェノール樹脂をエポキシ化又はブチル化した変性ノボラック型フェノール樹脂、ジシクロペンタジエン変性フェノール樹脂、パラキシレン変性フェノール樹脂、フェノールアラルキル樹脂、ビフェニルアラルキル樹脂、ナフトールアラルキル樹脂、トリフェノールアルカン型フェノール樹脂、多官能型フェノール樹脂などが挙げられる。なかでも、フェノールアラルキル樹脂、フェノールノボラック樹脂、ビフェニルアラルキル樹脂が好ましい。これらのフェノール樹脂硬化剤は１種を使用してもよく、２種以上を混合して使用してもよい。 [(B) phenolic resin curing agent]
The phenolic resin curing agent of the component (B) used in the present embodiment has two or more phenolic hydroxyl groups per molecule and can cure the epoxy resin of the component (A). Any material that is generally used as a sealing material for electronic components can be used without any particular limitation.
Specific examples of the phenol resin curing agent (B) include novolak phenol resins such as phenol novolak resins and cresol novolak resins obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde. A modified novolak phenol resin obtained by epoxidizing or butylating a novolak phenol resin, a dicyclopentadiene modified phenol resin, a paraxylene modified phenol resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a naphthol aralkyl resin, a triphenol alkane phenol resin, Examples include a polyfunctional phenol resin. Of these, phenol aralkyl resins, phenol novolak resins, and biphenyl aralkyl resins are preferred. One of these phenolic resin curing agents may be used, or two or more of them may be used in combination.
　（Ｂ）成分のフェノール樹脂硬化剤の含有量は、上記（Ａ）成分のエポキシ樹脂が有するエポキシ基数（ａ）に対する（Ｂ）成分のフェノール樹脂硬化剤が有するフェノール性水酸基数（ｂ）の比（ｂ）／（ａ）が０．３以上１．５以下となる範囲であってもよく、０．５以上１．２以下となる範囲であってもよい。比（ｂ）／（ａ）が０．３以上であると硬化物の耐湿信頼性が向上し、１．５以下であると硬化物の強度が向上する。 The content of the phenolic resin curing agent of the component (B) is determined by the ratio of the number of phenolic hydroxyl groups (b) of the phenolic resin curing agent of the component (B) to the number of epoxy groups (a) of the epoxy resin of the component (A). (B) / (a) may be in the range of 0.3 or more and 1.5 or less, or may be in the range of 0.5 or more and 1.2 or less. When the ratio (b) / (a) is 0.3 or more, the moisture resistance reliability of the cured product is improved, and when it is 1.5 or less, the strength of the cured product is improved.
　また、封止用樹脂組成物中における（Ａ）成分のエポキシ樹脂及び（Ｂ）成分のフェノール樹脂硬化剤の合計含有量は、５～２０質量％であってもよく、１０～１５質量％であってもよい。 The total content of the epoxy resin (A) and the phenolic resin curing agent (B) in the encapsulating resin composition may be 5 to 20% by mass, or 10 to 15% by mass. There may be.
〔（Ｃ）硬化促進剤〕
　本実施形態で用いられる（Ｃ）成分の硬化促進剤は、（Ａ）成分のエポキシ樹脂と、（Ｂ）成分のフェノール樹脂硬化剤との硬化反応を促進する成分である。（Ｃ）成分の硬化促進剤は、上記作用を奏するものであれば、特に制限されることなく公知の硬化促進剤を使用することができる。 [(C) curing accelerator]
The curing accelerator of the component (C) used in the present embodiment is a component that promotes a curing reaction between the epoxy resin of the component (A) and the phenol resin curing agent of the component (B). As the curing accelerator of the component (C), a known curing accelerator can be used without any particular limitation as long as it has the above-mentioned effect.
　（Ｃ）成分の硬化促進剤としては、具体的には、２－メチルイミダゾール、２－エチルイミダゾール、２－イソプロピルイミダゾール、２－ウンデシルイミダゾール、１，２－ジメチルイミダゾール、２，４－ジメチルイミダゾール、２－フェニルイミダゾール、２－フェニル－４－メチルイミダゾール、４－メチルイミダゾール、４－エチルイミダゾール、２－フェニル－４－ヒドロキシメチルイミダゾール、２－エチル－４－メチルイミダゾール、１－シアノエチル－２－メチルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾール、２－フェニル－４，５－ジヒドロキシメチルイミダゾール、１－ベンジル－２－メチルイミダゾール、１－ベンジル－２－フェニルイミダゾール、１－シアノエチル－２－エチル－４－メチルイミダゾール、１－シアノエチル－２－ウンデシルイミダゾール、１－シアノエチル－２－フェニルイミダゾール等のイミダゾール類；１，８－ジアザビシクロ［５．４．０］ウンデセン－７（ＤＢＵ）、１，５－ジアザビシクロ［４．３．０］ノネン、５，６－ジブチルアミノ－１，８－ジアザビシクロ［５．４．０］ウンデセン－７等のジアザビシクロ化合物及びこれらの塩；トリエチルアミン、トリエチレンジアミン、ベンジルジメチルアミン、α－メチルベンジルジメチルアミン、トリエタノールアミン、ジメチルアミノエタノール、トリス（ジメチルアミノメチル）フェノール等の三級アミン類；トリメチルホスフィン、トリエチルホスフィン、トリブチルホスフィン、ジフェニルホスフィン、トリフェニルホスフィン、トリ（ｐ－メチルフェニル）ホスフィン、トリ（ノニルフェニル）ホスフィン、メチルジフェニルホスフィン、ジブチルフェニルホスフィン、トリシクロヘキシルホスフィン、ビス（ジフェニルホスフィノ）メタン、１，２－ビス（ジフェニルホスフィノ）エタン等の有機ホスフィン化合物などが挙げられる。これらのなかでも、流動性及び成形性が良好であるという観点から、イミダゾール類であってもよい。これらの硬化促進剤は１種を使用してもよく、２種以上を混合して使用してもよい。 Specific examples of the curing accelerator of the component (C) include 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-undecylimidazole, 1,2-dimethylimidazole, and 2,4-dimethylimidazole. , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 4-methylimidazole, 4-ethylimidazole, 2-phenyl-4-hydroxymethylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2- Methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl -2-D Imidazoles such as 4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole; 1,8-diazabicyclo [5.4.0] undecene-7 (DBU), , 5-diazabicyclo [4.3.0] nonene, 5,6-dibutylamino-1,8-diazabicyclo [5.4.0] undecene-7 and other diazabicyclo compounds and salts thereof; triethylamine, triethylenediamine, benzyl Tertiary amines such as dimethylamine, α-methylbenzyldimethylamine, triethanolamine, dimethylaminoethanol and tris (dimethylaminomethyl) phenol; trimethylphosphine, triethylphosphine, tributylphosphine, diphenylphosphine, triphenylphosphine Quinine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, methyldiphenylphosphine, dibutylphenylphosphine, tricyclohexylphosphine, bis (diphenylphosphino) methane, 1,2-bis (diphenylphosphino) ethane And the like. Among these, imidazoles may be used from the viewpoint of good fluidity and moldability. One of these curing accelerators may be used, or two or more of them may be used in combination.
　（Ｃ）成分の硬化促進剤の含有量は、封止用樹脂組成物全量に対し、０．１～５質量％の範囲であってもよく、０．１～１質量％の範囲であってもよい。（Ｃ）成分の硬化促進剤の含有量が０．１質量％以上であると硬化性の促進効果が得られ、５質量％以下であると成形時にワイヤの変形および破損を抑制し、充填性を良好にすることができる。 The content of the curing accelerator of the component (C) may be in the range of 0.1 to 5% by mass or 0.1 to 1% by mass based on the total amount of the sealing resin composition. Is also good. When the content of the curing accelerator (C) is 0.1% by mass or more, the effect of promoting curability is obtained. When the content is 5% by mass or less, deformation and breakage of the wire at the time of molding are suppressed, and the filling property is improved. Can be improved.
〔（Ｄ）無機充填材〕
　本実施形態で用いられる（Ｄ）成分の無機充填材は、この種の樹脂組成物に一般的に使用されている公知の無機充填材であれば、特に制限されることなく使用することができる。
　（Ｄ）成分の無機充填材としては、例えば、溶融シリカ、結晶シリカ、破砕シリカ、合成シリカ、アルミナ、酸化チタン、酸化マグネシウム等の酸化物粉末；水酸化アルミニウム、水酸化マグネシウム等の水酸化物粉末；窒化ホウ素、窒化アルミニウム、窒化ケイ素等の窒化物粉末などが挙げられる。これらの無機充填材は、１種を使用してもよく、２種以上を混合して使用してもよい。 [(D) inorganic filler]
The inorganic filler of the component (D) used in the present embodiment can be used without particular limitation as long as it is a known inorganic filler generally used for this type of resin composition. .
Examples of the inorganic filler as the component (D) include oxide powders such as fused silica, crystalline silica, crushed silica, synthetic silica, alumina, titanium oxide, and magnesium oxide; and hydroxides such as aluminum hydroxide and magnesium hydroxide. Powders: nitride powders such as boron nitride, aluminum nitride, and silicon nitride are exemplified. One of these inorganic fillers may be used, or two or more thereof may be used in combination.
　（Ｄ）成分の無機充填材は、本実施形態の封止用樹脂組成物の取り扱い性および成形性を高める観点から、上記例示したなかでもシリカ粉末であってもよく、溶融シリカであってもよく、球状溶融シリカであってもよい。また、溶融シリカと溶融シリカ以外のシリカを併用することもでき、その場合、溶融シリカ以外のシリカの割合はシリカ粉末全体の３０質量％未満としてもよい。 From the viewpoint of enhancing the handleability and moldability of the sealing resin composition of the present embodiment, the inorganic filler of the component (D) may be a silica powder or a fused silica among those exemplified above. It may be spherical fused silica. Further, fused silica and silica other than fused silica can be used in combination. In this case, the ratio of silica other than fused silica may be less than 30% by mass of the entire silica powder.
　（Ｄ）成分の無機充填材は、平均粒径が０．５～４０μｍであってもよく、１～３０μｍであってもよく、５～２０μｍであってもよい。また、（Ｄ）成分の無機充填材の最大粒径は５５μｍ以下であってもよい。平均粒径が０．５μｍ以上であると、封止用樹脂組成物の流動性および成形性を向上させることができる。一方、平均粒径が４０μｍ以下であると、封止用樹脂組成物を硬化して得られる成形品の反りが抑制され、寸法精度を向上させることができる。また、最大粒径が５５μｍ以下であると、封止用樹脂組成物の成形性を向上させることができる。
　なお、本明細書において、（Ｄ）成分の無機充填材の平均粒径は、例えば、レーザー回折式粒度分布測定装置により求めることができ、平均粒径は、同装置で測定された粒度分布において積算体積が５０％になる粒径（ｄ５０）である。 The inorganic filler as the component (D) may have an average particle size of 0.5 to 40 μm, 1 to 30 μm, or 5 to 20 μm. Further, the maximum particle size of the inorganic filler as the component (D) may be 55 μm or less. When the average particle size is 0.5 μm or more, the fluidity and moldability of the sealing resin composition can be improved. On the other hand, when the average particle diameter is 40 μm or less, warpage of a molded product obtained by curing the sealing resin composition can be suppressed, and dimensional accuracy can be improved. When the maximum particle size is 55 μm or less, the moldability of the encapsulating resin composition can be improved.
In the present specification, the average particle size of the inorganic filler of the component (D) can be determined by, for example, a laser diffraction type particle size distribution analyzer, and the average particle size is calculated based on the particle size distribution measured by the same device. The particle size (d50) at which the integrated volume becomes 50%.
　（Ｄ）成分の無機充填材の含有量は、封止用樹脂組成物全量に対し、７０～９５質量％の範囲であってもよく、７５～９０質量％の範囲であってもよい。（Ｄ）成分の無機充填材の含有量が７０質量％以上であると、封止用樹脂組成物の線膨張係数が増大しすぎることがなく、当該封止用樹脂組成物を硬化して得られる成形品の寸法精度、耐湿性、機械的強度等を向上させることができる。また、（Ｄ）成分の無機充填材の含有量が９５質量％以下であると、封止用樹脂組成物を成形して得られる樹脂シートを割れにくくすることができる。また、封止用樹脂組成物の溶融粘度が増大しすぎることがなく、流動性および成形性を向上させることができる。 The content of the inorganic filler as the component (D) may be in the range of 70 to 95% by mass, or may be in the range of 75 to 90% by mass based on the total amount of the sealing resin composition. When the content of the inorganic filler as the component (D) is 70% by mass or more, the linear expansion coefficient of the sealing resin composition is not excessively increased, and the sealing resin composition is cured. The dimensional accuracy, moisture resistance, mechanical strength and the like of the molded article to be obtained can be improved. When the content of the inorganic filler as the component (D) is 95% by mass or less, a resin sheet obtained by molding the sealing resin composition can be hardly cracked. In addition, the melt viscosity of the sealing resin composition does not increase too much, and the fluidity and moldability can be improved.
　本実施形態の封止用樹脂組成物には、以上の各成分の他、本実施形態の効果を阻害しない範囲で、この種の樹脂組成物に一般に配合される成分、例えば、カップリング剤；合成ワックス、天然ワックス、高級脂肪酸、高級脂肪酸の金属塩等の離型剤；カーボンブラック、コバルトブルー等の着色剤；シリコーンオイル、シリコーンゴム等の低応力付与剤；ハイドロタルサイト類；イオン捕捉剤などを配合することができる。 The sealing resin composition of the present embodiment includes, in addition to the above components, components generally blended with this type of resin composition within a range that does not impair the effects of the present embodiment, for example, a coupling agent; Release agents such as synthetic waxes, natural waxes, higher fatty acids, and metal salts of higher fatty acids; coloring agents such as carbon black and cobalt blue; low stress imparting agents such as silicone oil and silicone rubber; hydrotalcites; And the like.
　カップリング剤としては、エポキシシラン系、アミノシラン系、ウレイドシラン系、ビニルシラン系、アルキルシラン系、有機チタネート系、アルミニウムアルコレート系等のカップリング剤を使用することができる。これらのカップリング剤は１種を使用してもよく、２種以上を混合して使用してもよい。なかでも、成形性、難燃性、硬化性等の観点から、アミノシラン系カップリング剤が好ましく、特に、γ－アミノプロピルトリメトキシシラン、γ－アミノプロピルトリエトキシシラン、γ－アミノプロピルメチルジメトキシシラン、γ－アミノプロピルメチルジエトキシシラン、γ－フェニルアミノプロピルトリメトキシシラン等が好ましい。 Coupling agents such as epoxy silane, amino silane, ureido silane, vinyl silane, alkyl silane, organic titanate and aluminum alcoholate can be used as the coupling agent. One type of these coupling agents may be used, or two or more types may be mixed and used. Among them, aminosilane-based coupling agents are preferable from the viewpoint of moldability, flame retardancy, curability, etc., and particularly, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldimethoxysilane , Γ-aminopropylmethyldiethoxysilane, γ-phenylaminopropyltrimethoxysilane and the like.
　カップリング剤の含有量は、封止用樹脂組成物全量に対し、０．０１～３質量％の範囲であってもよく、０．１～１質量％の範囲であってもよい。カップリング剤の含有量が０．０１質量％以上であると、封止用樹脂組成物の成形性を向上させることができ、３質量％以下であると封止用樹脂組成物の成形時に発泡が低減でき、成形品にボイド又は表面膨れ等の発生を低減することができる。 含有 The content of the coupling agent may be in the range of 0.01 to 3% by mass or 0.1 to 1% by mass with respect to the total amount of the sealing resin composition. When the content of the coupling agent is 0.01% by mass or more, the moldability of the sealing resin composition can be improved, and when the content is 3% by mass or less, foaming occurs during molding of the sealing resin composition. And the occurrence of voids or surface swelling in the molded product can be reduced.
　本実施形態の封止用樹脂組成物は、ブロッキングを抑制する観点から、溶剤を含まなくてもよい。また、当該封止用樹脂組成物が溶剤を含まない場合、半導体素子を封止する際に、溶剤残りによる信頼性低下を招くおそれがない。 封 止 The sealing resin composition of the present embodiment may not include a solvent from the viewpoint of suppressing blocking. In addition, when the sealing resin composition does not contain a solvent, there is no possibility that the reliability may be degraded due to the remaining solvent when the semiconductor element is sealed.
　本実施形態の封止用樹脂組成物は、公知の封止用樹脂組成物の製造方法により得ることができ、例えば、次のように調製できる。まず、上記（Ａ）エポキシ樹脂、（Ｂ）フェノール樹脂硬化剤、（Ｃ）硬化促進剤、（Ｄ）無機充填材、及び上述した必要に応じて配合される各種成分をミキサー等によって十分に混合（ドライブレンド）した後、熱ロール又はニーダ等の混練装置により溶融混練し、加圧部材間で圧縮してシート状に成形する。より具体的には、封止用樹脂組成物を加熱軟化させながらロールあるいは熱プレスにより１５０～１０００μｍの厚みに圧延する。
　なお、封止用樹脂組成物を圧延する際の加熱温度は、通常、６０～１５０℃程度である。加熱温度が６０℃以上であると圧延しやすくなり、１５０℃以下であると硬化反応が適度に進行し、成形性を良好にすることができる。 The sealing resin composition of the present embodiment can be obtained by a known method for producing a sealing resin composition, and can be prepared, for example, as follows. First, the above-mentioned (A) epoxy resin, (B) phenolic resin curing agent, (C) curing accelerator, (D) inorganic filler, and the above-mentioned various components to be blended as required are sufficiently mixed by a mixer or the like. After (dry blending), the mixture is melt-kneaded by a kneading device such as a hot roll or a kneader, and compressed between pressurizing members to form a sheet. More specifically, the sealing resin composition is rolled to a thickness of 150 to 1000 μm by a roll or a hot press while being softened by heating.
The heating temperature when rolling the sealing resin composition is usually about 60 to 150 ° C. When the heating temperature is 60 ° C. or higher, rolling becomes easy, and when the heating temperature is 150 ° C. or lower, the curing reaction proceeds appropriately and the moldability can be improved.
　次いで、得られたシートを冷却した後、適当な大きさに粉砕する。
　シートの厚みは１５０～１０００μｍであり、１５０～７００μｍであってもよく、１５０～５００μｍであってもよく、２００～４００μｍであってもよい。シートの厚みが上記範囲内であると、当該シートを粉砕することで、前述の特定の形状を有するフレーク状の封止用樹脂組成物を得ることができる。また、当該シートを粉砕した際に、ＪＩＳ標準篩（ＪＩＳ　Ｚ８８０１－１：２００６規定）を用いた分級により、公称目開き１５０μｍの篩を通過する微粉を生じにくくすることができる。本実施形態のフレーク状封止用樹脂組成物中に含まれる前述の封止用樹脂組成物ａを５質量％以下に低減することができる。
　なお、上記シートの厚みは、例えば、マイクロメーターを用いて当該シートの厚みを５０点測定し、その平均値として求めることができる。 Next, after cooling the obtained sheet, it is pulverized to an appropriate size.
The thickness of the sheet is 150 to 1000 μm, may be 150 to 700 μm, may be 150 to 500 μm, and may be 200 to 400 μm. When the thickness of the sheet is within the above range, the flake-shaped sealing resin composition having the above-mentioned specific shape can be obtained by pulverizing the sheet. Further, when the sheet is pulverized, fine particles passing through a sieve having a nominal opening of 150 μm can be made less likely to be generated by classification using a JIS standard sieve (JIS Z8801-1: 2006). The aforementioned sealing resin composition a contained in the flake-shaped sealing resin composition of the present embodiment can be reduced to 5% by mass or less.
The thickness of the sheet can be determined as an average value by measuring the thickness of the sheet at 50 points using a micrometer, for example.
　粉砕方法は、特に制限されず、一般的な粉砕機、例えば、スピードミル、カッティングミル、ボールミル、サイクロンミル、ハンマーミル、振動ミル、カッターミル、グラインダーミル等を用いることができる。なかでも、スピードミルを用いることができる。
　また、押出機を用いて封止用樹脂組成物を平紐状に成形し、カッター等で所定の長さに切断するホットカット法で粉砕してもよい。
　粉砕物は、その後、篩い分級又はエアー分級等によって所定の粒度分布を持つフレーク状の集合体として、特性を整えて調製することができる。 The pulverization method is not particularly limited, and a general pulverizer such as a speed mill, a cutting mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a cutter mill, a grinder mill, or the like can be used. Among them, a speed mill can be used.
Alternatively, the encapsulating resin composition may be formed into a flat string shape using an extruder, and may be pulverized by a hot cut method of cutting into a predetermined length with a cutter or the like.
The pulverized product can then be prepared by sieving classification or air classification as a flake-like aggregate having a predetermined particle size distribution with the properties adjusted.
　このようにして得られるフレーク状封止用樹脂組成物は、下記式（１）で表される隙間率を６０％以下とすることができ、５０％以下とすることができ、４０％以下とすることができる。
　　隙間率（％）＝｛１－（樹脂供給面積／キャビティ面積）}×１００・・・式（１）
　ここで、隙間率はキャビティ内へ封止用樹脂組成物を供給した時の、当該封止用樹脂組成物により被覆されていない面積比率を表す。キャビティ面積は成形金型の底部の有効面積であり、樹脂供給面積は封止用樹脂組成物によって被覆されている面積を示す。
　上記隙間率が６０％以下であると、封止用樹脂組成物の溶け性が良好となり、充填性が向上し硬化物にボイド等の発生を低減することができる。また、ワイヤ流れを十分に低減することができる。 The flake-form sealing resin composition thus obtained can have a gap ratio represented by the following formula (1) of 60% or less, 50% or less, and 40% or less. can do.
Gap ratio (%) = {1− (resin supply area / cavity area)} × 100 (1)
Here, the gap ratio indicates an area ratio that is not covered with the sealing resin composition when the sealing resin composition is supplied into the cavity. The cavity area is the effective area at the bottom of the molding die, and the resin supply area indicates the area covered by the sealing resin composition.
When the gap ratio is 60% or less, the melting property of the sealing resin composition is improved, the filling property is improved, and the generation of voids and the like in the cured product can be reduced. Further, the wire flow can be sufficiently reduced.
［半導体装置］
　本実施形態の半導体装置は、上記フレーク状封止用樹脂組成物を用いて圧縮成形により半導体素子を封止することにより製造することができる。以下、その方法の一例を説明する。
　まず、圧縮成形用金型の上型に、半導体素子を実装した基板を供給した後、下型のキャビティ内に上記封止用樹脂組成物を供給する。次に、上型及び下型を所要の型締圧力にて型締めをし、下型キャビティで加熱溶融した封止用樹脂組成物に半導体素子を浸漬する。次に、下型キャビティ内の加熱溶融した封止用樹脂組成物をキャビティ底面部材で押圧し、減圧下で、所要の圧力を加えて圧縮成形する。成形条件は、温度１２０℃以上２００℃以下、圧力２ＭＰａ以上２０ＭＰａ以下とすることができる。 [Semiconductor device]
The semiconductor device of the present embodiment can be manufactured by sealing a semiconductor element by compression molding using the flake-shaped sealing resin composition. Hereinafter, an example of the method will be described.
First, after the substrate on which the semiconductor element is mounted is supplied to the upper die of the compression molding die, the sealing resin composition is supplied into the cavity of the lower die. Next, the upper mold and the lower mold are clamped at a required clamping pressure, and the semiconductor element is immersed in the sealing resin composition heated and melted in the lower mold cavity. Next, the heat-melted sealing resin composition in the lower mold cavity is pressed by the cavity bottom member, and compression molding is performed by applying a required pressure under reduced pressure. The molding conditions may be a temperature of 120 ° C. to 200 ° C. and a pressure of 2 MPa to 20 MPa.
　図１は、このようにして得られた本開示の半導体装置の一例を示したものであり、銅フレーム等のリードフレーム１と半導体素子２の間に、接着剤層３が介在されてもよい。また、半導体素子２上の電極４とリードフレーム１のリード部５とがボンディングワイヤ６により接続されており、さらに、これらが本開示の封止用樹脂組成物の硬化物（封止樹脂）７により封止されている。 FIG. 1 shows an example of the semiconductor device of the present disclosure obtained as described above, and an adhesive layer 3 may be interposed between a lead frame 1 such as a copper frame and a semiconductor element 2. . Further, the electrode 4 on the semiconductor element 2 and the lead portion 5 of the lead frame 1 are connected by a bonding wire 6, and these are cured products (sealing resin) 7 of the sealing resin composition of the present disclosure. Is sealed.
　本実施形態の半導体装置は、前述の特定の形状を有する封止用樹脂組成物により半導体素子が封止されているので、成形時のワイヤ流れ等の発生が低減される。また、成形性も向上して、高い信頼性を有する半導体装置とすることができる。
　また、前述の特定の形状を有する封止用樹脂組成物を用いると、半導体装置の半導体素子上の封止材の厚みを２００μｍ以下としてもよく、１５０μｍ以下としてもよく、１００μｍ以下とすることができる。 In the semiconductor device of the present embodiment, since the semiconductor element is sealed with the sealing resin composition having the specific shape described above, the occurrence of wire flow or the like during molding is reduced. In addition, moldability is improved, and a highly reliable semiconductor device can be obtained.
When the sealing resin composition having the above specific shape is used, the thickness of the sealing material on the semiconductor element of the semiconductor device may be 200 μm or less, 150 μm or less, or 100 μm or less. it can.
　さらに、封止用樹脂組成物として、前述の特定の形状を有するものを使用した場合には、封止用樹脂組成物を下型のキャビティに供給する際の飛散又は、減圧下で加熱溶融した樹脂が飛散する、いわゆる「樹脂漏れ」が低減されるため、高い信頼性を有する半導体装置を得ることができる。 Furthermore, when the sealing resin composition having the above-mentioned specific shape is used, the sealing resin composition is scattered when supplied to the cavity of the lower mold, or is heated and melted under reduced pressure. Since so-called “resin leakage” in which resin is scattered is reduced, a highly reliable semiconductor device can be obtained.
　なお、本開示の半導体装置において封止される半導体素子は、特に限定されるものではなく、例えば、ＩＣ、ＬＳＩ、ダイオード、サイリスタ、トランジスタ等が例示される。封止後の厚みが０．１ｍｍ以上１．５ｍｍ以下であるワイヤ流れの生じやすい半導体装置の場合に、本発明は有用である。 The semiconductor element sealed in the semiconductor device of the present disclosure is not particularly limited, and examples thereof include an IC, an LSI, a diode, a thyristor, and a transistor. The present invention is useful in the case of a semiconductor device having a thickness of 0.1 mm or more and 1.5 mm or less after sealing, in which a wire flow is likely to occur.
　次に実施例により、本開示を具体的に説明するが、本開示はこれらの例によって何ら限定されるものではない。なお、表１中、空欄は配合なしを表す。 Next, the present disclosure will be specifically described with reference to examples, but the present disclosure is not limited to these examples. In addition, in Table 1, the blank column represents no formulation.
（実施例１～７、及び比較例１～４）
　表１に記載の種類及び配合量の各成分を常温（２５℃）でミキサーを用いて混合し、次いで、熱ロールを用いて８０～１３０℃で加熱混練した。樹脂温度６０～１１０℃において、ロールを用い圧延、冷却し、表１に示す厚みのシートを得た。
　得られたシートを、スピードミルを用いて粉砕し、ＪＩＳ標準篩（ＪＩＳ　Ｚ８８０１－１：２００６規定）３種類（目開き１５０μｍ、１ｍｍ、２ｍｍ）を用い封止用樹脂組成物を調製した。
　さらに、得られた封止用樹脂組成物を用いて半導体チップの封止を行った。すなわち、５０ｍｍ×５０ｍｍ×０．５４ｍｍのＦＢＧＡ（Fine pitch Ball Grid Array）を、封止用樹脂組成物を用いて、金型温度１７５℃、成形圧力８．０ＭＰａ、硬化時間２分間の条件で圧縮成形した後、１７５℃、４時間の後硬化を行い、半導体装置を製造した。 (Examples 1 to 7, and Comparative Examples 1 to 4)
The components of the types and compounding amounts shown in Table 1 were mixed at room temperature (25 ° C.) using a mixer, and then heated and kneaded at 80 to 130 ° C. using a hot roll. Rolling was performed using a roll at a resin temperature of 60 to 110 ° C., followed by cooling to obtain a sheet having the thickness shown in Table 1.
The obtained sheet was pulverized using a speed mill, and a sealing resin composition was prepared using three types of JIS standard sieves (JIS Z8801-1: 2006 regulations) (mesh size: 150 μm, 1 mm, 2 mm).
Furthermore, a semiconductor chip was sealed using the obtained sealing resin composition. That is, a 50 mm × 50 mm × 0.54 mm FBGA (Fine pitch Ball Grid Array) is compressed using a sealing resin composition under the conditions of a mold temperature of 175 ° C., a molding pressure of 8.0 MPa, and a curing time of 2 minutes. After molding, post-curing was performed at 175 ° C. for 4 hours to produce a semiconductor device.
〔粉砕前のシートの厚み（ｄａｖｅ.）、最大厚み（ｄｍａｘ）、最小厚み（ｄｍｉｎ）の測定〕
　マイクロメーターを用いて得られたシートの厚みを５０点測定し、最大厚み（ｄｍａｘ）、最小厚み（ｄｍｉｎ）を求め、さらに、測定した５０点の平均値をシートの厚み（ｄａｖｅ.）とした。
　また、シートの厚み（ｄａｖｅ.）に対する当該シートの最大厚み（ｄｍａｘ）と最小厚み（ｄｍｉｎ）との差の割合を算出した。 [Measurement of thickness (d ave. ), Maximum thickness (d max ), minimum thickness (d min ) of sheet before pulverization]
The thickness of the sheet obtained using a micrometer was measured at 50 points, the maximum thickness (d max ) and the minimum thickness (d min ) were determined, and the average of the measured 50 points was calculated as the sheet thickness (d ave. ).
The ratio of the difference between the maximum thickness (d max ) and the minimum thickness (d min ) of the sheet to the thickness (d ave. ) Of the sheet was calculated.
〔封止用樹脂組成物の厚みの測定〕
　光学顕微鏡（倍率：２００倍）を用いて得られた封止用樹脂組成物の厚みを５０点測定し、測定した５０点の平均値を封止用樹脂組成物の厚みとした。
　また、実施例１～７、及び比較例１、４で得られた封止用樹脂組成物５０個を光学顕微鏡（倍率：２００倍）により観察したところ、いずれも厚み方向に破断されており、当該封止用樹脂組成物の８０質量％以上が、平行な一対の平面を有し、当該一対の平面間の距離（厚み）が１５０～１０００μｍの範囲内であることを確認した。 (Measurement of the thickness of the sealing resin composition)
The thickness of the obtained sealing resin composition was measured at 50 points using an optical microscope (magnification: 200 times), and the average value of the measured 50 points was taken as the thickness of the sealing resin composition.
Also, when 50 sealing resin compositions obtained in Examples 1 to 7 and Comparative Examples 1 and 4 were observed by an optical microscope (magnification: 200 times), all of them were broken in the thickness direction. It was confirmed that 80% by mass or more of the sealing resin composition had a pair of parallel planes, and the distance (thickness) between the pair of planes was in the range of 150 to 1000 μm.
　封止用樹脂組成物の調製に使用した表１に記載の各成分の詳細は以下のとおりである。 詳細 Details of each component described in Table 1 used for preparing the sealing resin composition are as follows.
（Ａ）エポキシ樹脂
・エポキシ樹脂１：ＮＣ－３０００（日本化薬（株）製、商品名；エポキシ当量：２７３、軟化点：５８℃）
・エポキシ樹脂２：ＹＸ－４０００Ｈ（三菱ケミカル（株）製、商品名；エポキシ当量：１９３、軟化点：１０５℃） (A) Epoxy resin / epoxy resin 1: NC-3000 (trade name, manufactured by Nippon Kayaku Co., Ltd .; epoxy equivalent: 273, softening point: 58 ° C.)
Epoxy resin 2: YX-4000H (trade name, manufactured by Mitsubishi Chemical Corporation; epoxy equivalent: 193, softening point: 105 ° C)
（Ｂ）フェノール樹脂硬化剤
・フェノール樹脂１：ＭＥＨ－７８００Ｍ（明和化成（株）製、商品名；水酸基当量：１７５）
・フェノール樹脂２：ＢＲＧ－５５７（昭和電工（株）製、商品名；水酸基当量：１０４） (B) Phenolic resin curing agent / phenol resin 1: MEH-7800M (trade name; hydroxyl equivalent: 175, manufactured by Meiwa Kasei Co., Ltd.)
-Phenol resin 2: BRG-557 (manufactured by Showa Denko KK, trade name; hydroxyl equivalent: 104)
（Ｃ）硬化促進剤
・イミダゾール：２Ｐ４ＭＨＺ（四国化成（株）製、商品名） (C) Curing accelerator / imidazole: 2P4MHZ (trade name, manufactured by Shikoku Chemicals Co., Ltd.)
（Ｄ）無機充填材
・溶融シリカ１：ＭＳＲ－８０３０（（株）龍森製、商品名；平均粒径：１２μｍ）
・溶融シリカ２：ＳＣ－４５００ＳＱ（（株）アドマテックス製、商品名；平均粒径：１μｍ） (D) Inorganic filler / fused silica 1: MSR-8030 (trade name, manufactured by Tatsumori Co., Ltd .; average particle size: 12 μm)
・ Fused silica 2: SC-4500SQ (trade name; average particle size: 1 μm, manufactured by Admatechs Co., Ltd.)
（その他添加剤）
・シランカップリング剤：Ｚ－６８８３（東レ・ダウコーニング（株）製、商品名；γ－フェニルアミノプロピルトリメトキシシラン）
・着色剤：ＭＡ－６００（三菱ケミカル（株）製、商品名；カーボンブラック） (Other additives)
-Silane coupling agent: Z-6883 (manufactured by Dow Corning Toray Co., Ltd., trade name: γ-phenylaminopropyltrimethoxysilane)
Colorant: MA-600 (manufactured by Mitsubishi Chemical Corporation, trade name: carbon black)
　また、上記各実施例及び各比較例で得られた封止用樹脂組成物及び半導体装置（製品）について、以下に示す方法で各種特性を評価した。その結果を表１に併せて示した。 {Circle around (1)} Further, various characteristics of the sealing resin composition and the semiconductor device (product) obtained in each of the above Examples and Comparative Examples were evaluated by the following methods. The results are shown in Table 1.
＜評価項目＞
（封止用樹脂組成物）
（１）スパイラルフロー
　ＥＭＭＩ規格に準じた金型を用いて、温度１７５℃、圧力９．８ＭＰａでトランスファ成形し、測定した。 <Evaluation items>
(Resin composition for sealing)
(1) Spiral flow Using a mold conforming to the EMMI standard, transfer molding was performed at a temperature of 175 ° C. and a pressure of 9.8 MPa, and measurement was performed.
（２）ゲルタイム
　ＪＩＳ　Ｃ　２１６１（２０１０）の７．５．１に規定されるゲル化時間Ａ法に準じて、約１ｇの封止用樹脂組成物を１７５℃の熱盤上に塗布し、かき混ぜ棒にてかき混ぜ、ゲル状になりかき混ぜられなくなるまでの時間を測定した。 (2) Gel time According to the gel time A method specified in 7.5.1 of JIS C 2161 (2010), about 1 g of the sealing resin composition is applied on a hot plate at 175 ° C. and stirred. The mixture was stirred with a stick, and the time until the mixture became a gel and could not be stirred was measured.
（成形性）
（１）隙間率
　ＴＯＷＡ（株）製、圧縮成形機　ＰＭＣ１０４０－Ｄを用い、６６ｍｍ×２３２ｍｍのキャビティ内に実施例及び比較例のフレーク状または粉粒状の封止用樹脂組成物３ｇ（封止後素子上の樹脂厚み１００μｍ相当）を０．３ｇ／ｓの速度で供給し、封止用樹脂組成物表面を上部からキャビティ底面に向けデジタルカメラで撮影し画像化した。得られた画像を二値化し、封止用樹脂組成物の面積を計測し、隙間率を下記式（１）により算出した。
　隙間率（％）＝（１－（樹脂供給面積／キャビティ面積））×１００・・・式（１）
　ここで、隙間率はキャビティ内へ封止用樹脂組成物を供給した時の、当該封止用樹脂組成物により被覆されていない面積比率を表し、キャビティ面積は成形金型の底部の有効面積であり、樹脂供給面積は封止用樹脂組成物によって被覆されている面積を示す。
　なお、実施例１の隙間率を算出した際の二値化画像を図２に、比較例３の隙間率を算出した際の二値化画像を図３に示す。 (Moldability)
(1) Gap Ratio Using a compression molding machine PMC1040-D, manufactured by TOWA Corporation, 3 g of the flake-shaped or powder-shaped sealing resin composition of Example and Comparative Example (after sealing) in a 66 mm × 232 mm cavity. The thickness of the resin on the element was equivalent to 100 μm) was supplied at a rate of 0.3 g / s, and the surface of the resin composition for sealing was photographed with a digital camera from the top toward the bottom of the cavity and imaged. The obtained image was binarized, the area of the sealing resin composition was measured, and the void ratio was calculated by the following equation (1).
Gap ratio (%) = (1− (resin supply area / cavity area)) × 100 (1)
Here, the void ratio represents the area ratio when the sealing resin composition is not supplied to the cavity when the sealing resin composition is supplied into the cavity, and the cavity area is the effective area of the bottom of the molding die. The resin supply area indicates the area covered with the sealing resin composition.
FIG. 2 shows a binarized image when the gap ratio is calculated in Example 1, and FIG. 3 shows a binarized image when the gap ratio is calculated in Comparative Example 3.
（２）充填性
　ＴＯＷＡ（株）製、圧縮成形機　ＰＭＣ１０４０－Ｄを用い、６６ｍｍ×２３２ｍｍのキャビティ内に実施例及び比較例のフレーク状または粉粒状の封止用樹脂組成物３ｇ（封止後素子上の樹脂厚み１００μｍ相当）を０．３ｇ／ｓの速度で供給し、金型温度１７５℃、成形圧力５．０ＭＰａ、硬化時間２分間で圧縮成形した後、得られた成形品の未充填の有無を目視で確認した。未充填部分が無いものを「良好」、未充填部分があるものを「未充填」と評価した。 (2) Fillability Using a compression molding machine PMC1040-D, manufactured by TOWA Corporation, 3 g of the flake-like or powder-like sealing resin composition of Example and Comparative Example (after sealing) in a 66 mm × 232 mm cavity. (Resin thickness on the element: 100 μm) was supplied at a rate of 0.3 g / s, and compression molding was performed at a mold temperature of 175 ° C., a molding pressure of 5.0 MPa, and a curing time of 2 minutes. Was visually observed. Those with no unfilled parts were evaluated as “good”, and those with unfilled parts were evaluated as “unfilled”.
（３）ボイド
　ＴＯＷＡ（株）製、圧縮成形機　ＰＭＣ１０４０－Ｄを用い、６６ｍｍ×２３２ｍｍのキャビティ内に実施例及び比較例のフレーク状または粉粒状の封止用樹脂組成物３ｇ（封止後素子上の樹脂厚み１００μｍ相当）を０．３ｇ／ｓの速度で供給し、金型温度１７５℃、成形圧力５．０ＭＰａ、硬化時間２分間で圧縮成形し成形品を得た。得られた成形品のボイドを超音波探傷装置（日立建機ファインテック（株）製、ＦＳ３００II）で観察し、下記の基準によって評価した。
　Ａ：ボイドの発生なし
　Ｂ：ボイドの数が５個未満
　Ｃ：ボイドの数が５個以上 (3) Void Using a compression molding machine PMC1040-D, manufactured by TOWA Corporation, 3 g of a flake-shaped or powder-shaped sealing resin composition of Example and Comparative Example (device after sealing) was used in a 66 mm × 232 mm cavity. The upper resin thickness (equivalent to 100 μm) was supplied at a rate of 0.3 g / s, and compression molding was performed at a mold temperature of 175 ° C., a molding pressure of 5.0 MPa, and a curing time of 2 minutes to obtain a molded product. The void of the obtained molded article was observed with an ultrasonic flaw detector (FS300II, manufactured by Hitachi Construction Machinery Finetech Co., Ltd.) and evaluated according to the following criteria.
A: No voids generated B: Number of voids is less than 5 C: Number of voids is 5 or more
（４）ワイヤ流れ率
　５０ｍｍ×５０ｍｍ×０．５４ｍｍのＦＢＧＡを、封止用樹脂組成物を用いて、金型温度１７５℃、成形圧力８．０ＭＰａ、硬化時間２分間の条件で圧縮成形した後、得られた成形品（ＦＢＧＡ）内部の金ワイヤ（直径１８μｍ、長さ５ｍｍ）をＸ線観察装置（（株）島津製作所製、ＳＭＸ－１０００）で観察し、最大変形部のワイヤ流れ率（封止前のワイヤの位置と封止後のワイヤの位置との最大距離のワイヤの長さに対する比率（％））を求めた。 (4) Wire flow rate An FBGA having a size of 50 mm × 50 mm × 0.54 mm was compression-molded using a sealing resin composition under the conditions of a mold temperature of 175 ° C., a molding pressure of 8.0 MPa, and a curing time of 2 minutes. The gold wire (diameter: 18 μm, length: 5 mm) inside the obtained molded product (FBGA) was observed with an X-ray observation apparatus (SMX-1000, manufactured by Shimadzu Corporation), and the wire flow rate at the maximum deformation portion ( The ratio (%) of the maximum distance between the position of the wire before sealing and the position of the wire after sealing to the length of the wire was determined.
（半導体装置（製品））
（１）耐リフロー性（ＭＳＬ試験）
　半導体装置に対し、８５℃、８５％ＲＨにて７２時間吸湿処理した後、２６０℃の赤外線リフロー炉中で９０秒間加熱する試験（ＭＳＬ試験：Ｌｅｖｅｌ　３）を行い、不良(剥離及びクラック)の発生率を調べた（試料数＝２０）。 (Semiconductor device (product))
(1) Reflow resistance (MSL test)
After subjecting the semiconductor device to a moisture absorption treatment at 85 ° C. and 85% RH for 72 hours, a test (MSL test: Level 3) in which the semiconductor device is heated for 90 seconds in an infrared reflow furnace at 260 ° C. The incidence was examined (number of samples = 20).
（２）耐湿信頼性（プレッシャクッカー試験：ＰＣＴ）
　半導体装置を、プレッシャクッカー内で、１２７℃、０．２５ＭＰａの条件下、７２時間吸水させた後、２６０℃、９０秒間のベーパーリフローを行い、不良（オープン不良）の発生率を調べた（試料数＝２０）。 (2) Moisture resistance reliability (pressure cooker test: PCT)
After the semiconductor device was absorbed in a pressure cooker at 127 ° C. and 0.25 MPa for 72 hours, vapor reflow was performed at 260 ° C. for 90 seconds, and the occurrence rate of defects (open defects) was examined (sample Number = 20).
（３）高温放置信頼性（高度加速寿命試験：ＨＡＳＴ）
　半導体装置を、１８０℃の恒温槽中に１０００時間放置し、不良（オープン不良）の発生率を調べた（試料数＝２０）。 (3) High temperature storage reliability (highly accelerated life test: HAST)
The semiconductor device was left in a thermostat at 180 ° C. for 1000 hours, and the occurrence rate of defects (open defects) was examined (the number of samples = 20).
 
Figure JPOXMLDOC01-appb-T000001
  
Figure JPOXMLDOC01-appb-T000001
　表１から明らかなように、本実施例の封止用樹脂組成物は、成形時の充填性が良好でワイヤ流れが極めて低かった。実施例と比較例においてスパイラルフローの値に差がないが、実施例は比較例よりも隙間率が低いことがわかる。なお、図２に実施例１の隙間率を算出した際の二値化画像を、図３に比較例３の隙間率を算出した際の二値化画像を示す。図２及び図３において白色部分はキャビティ内で封止用樹脂組成物により被覆されていない部分を示し、黒色部分はキャビティ内で封止用樹脂組成物により被覆されている部分を示す。図２及び図３から実施例１は比較例３よりもキャビティ内で封止用樹脂組成物が均一に充填されており隙間率が低いことがわかる。
　本発明の封止用樹脂組成物は、フレーク形状のため金型内へ薄くかつ均一に供給することができるため、圧縮成形時の樹脂流動が少なくなり、良好な充填性と低いワイヤ流れ率を得られるものである。
　また、当該封止用樹脂組成物を用いて製造された半導体装置は、ＭＳＬ試験、プレッシャクッカー試験、高度加速寿命試験のいずれの試験においても良好な結果が得られており、樹脂封止型半導体装置として高い信頼性を有するものであることが確認できた。 As is clear from Table 1, the sealing resin composition of this example had good filling properties during molding and extremely low wire flow. Although there is no difference in the value of the spiral flow between the example and the comparative example, it is found that the example has a lower void ratio than the comparative example. FIG. 2 shows a binarized image when the gap ratio of Example 1 is calculated, and FIG. 3 shows a binarized image when the gap ratio of Comparative Example 3 is calculated. 2 and 3, white portions indicate portions in the cavity that are not covered with the sealing resin composition, and black portions indicate portions in the cavity that are covered with the sealing resin composition. 2 and FIG. 3, it can be seen that the sealing resin composition in Example 1 was uniformly filled in the cavity and the void ratio was lower in Example 1 than in Comparative Example 3.
The sealing resin composition of the present invention can be supplied thinly and uniformly into a mold because of the flake shape. It is obtained.
In addition, the semiconductor device manufactured using the sealing resin composition has obtained good results in any of the MSL test, the pressure cooker test, and the highly accelerated life test, It was confirmed that the device had high reliability.
　本発明の封止用樹脂組成物は、フレーク形状のため金型内へ薄くかつ均一に供給することができるため、成形性に優れるとともに成形時のワイヤ流れも低減される。したがって、封止樹脂厚が薄く、また、長くかつ細いワイヤによって接続された半導体素子の封止材料として有用であり、信頼性の高い樹脂封止型半導体装置を製造することができる。 た め The sealing resin composition of the present invention can be thinly and uniformly supplied into a mold due to its flake shape, so that it has excellent moldability and reduces wire flow during molding. Therefore, the sealing resin has a small thickness and is useful as a sealing material for semiconductor elements connected by long and thin wires, and a highly reliable resin-sealed semiconductor device can be manufactured.
　　１　　リードフレーム
　　２　　半導体素子
　　３　　接着剤層
　　４　　電極
　　５　　リード部
　　６　　ボンディングワイヤ
　　７　　封止用樹脂組成物の硬化物（封止樹脂） DESCRIPTION OF SYMBOLS 1 Lead frame 2 Semiconductor element 3 Adhesive layer 4 Electrode 5 Lead part 6 Bonding wire 7 Cured resin of sealing resin composition (sealing resin)

Claims (5)

  1. 　（Ａ）エポキシ樹脂、（Ｂ）フェノール樹脂硬化剤、（Ｃ）硬化促進剤、および（Ｄ）無機充填材を含有するフレーク状封止用樹脂組成物であって、
    　前記フレーク状封止用樹脂組成物の８０質量％以上が、平行な一対の平面を有し、当該一対の平面間の距離が１５０～１０００μｍである平行面含有樹脂組成物であり、
    　前記フレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩を用いた分級により、公称目開き１５０μｍの篩を通過するフレーク状封止用樹脂組成物が５質量％以下、及び公称目開き２ｍｍの篩を通過しないフレーク状封止用樹脂組成物が５質量％以下であることを特徴とするフレーク状封止用樹脂組成物。     A flake-shaped sealing resin composition containing (A) an epoxy resin, (B) a phenolic resin curing agent, (C) a curing accelerator, and (D) an inorganic filler,
    80% by mass or more of the flake-shaped sealing resin composition has a pair of parallel planes, and a distance between the pair of planes is 150 to 1000 μm, and is a parallel plane-containing resin composition;
    By classification using a JIS standard sieve, the flake-shaped sealing resin composition passing through a sieve having a nominal opening of 150 μm contained in the flake-shaped sealing resin composition is 5% by mass or less, and the nominal opening is A flake-shaped sealing resin composition which does not pass through a 2 mm sieve is 5% by mass or less.
  2. 　前記フレーク状封止用樹脂組成物中に含まれる、ＪＩＳ標準篩を用いた分級により、公称目開き１５０μｍを超え１ｍｍ以下の篩を通過するフレーク状封止用樹脂組成物が２０質量％以上であることを特徴とする請求項１に記載のフレーク状封止用樹脂組成物。 By classification using a JIS standard sieve contained in the flake-shaped sealing resin composition, the flake-shaped sealing resin composition that passes through a sieve having a nominal opening of more than 150 μm and 1 mm or less is 20% by mass or more. The flake-form sealing resin composition according to claim 1, wherein:
  3. 　下記式（１）で表される隙間率が６０％以下であることを特徴とする請求項１又は２に記載のフレーク状封止用樹脂組成物。
    　　隙間率（％）＝｛１－（樹脂供給面積／キャビティ面積）}×１００・・・式（１）
    （ここで、隙間率はキャビティ内へ封止用樹脂組成物を供給した時の、当該封止用樹脂組成物により被覆されていない面積比率を表し、キャビティ面積は成形金型の底部の有効面積であり、樹脂供給面積は封止用樹脂組成物によって被覆されている面積を示す。）     The flake-form sealing resin composition according to claim 1 or 2, wherein a gap ratio represented by the following formula (1) is 60% or less.
    Gap ratio (%) = {1− (resin supply area / cavity area)} × 100 (1)
    (Here, the void ratio indicates an area ratio not covered by the sealing resin composition when the sealing resin composition is supplied into the cavity, and the cavity area is an effective area at the bottom of the molding die. , And the resin supply area indicates the area covered with the sealing resin composition.)
  4. 　請求項１乃至３のいずれか１項に記載のフレーク状封止用樹脂組成物を用いて圧縮成形により半導体素子を封止してなることを特徴とする半導体装置。 A semiconductor device comprising a semiconductor element sealed by compression molding using the flake-shaped sealing resin composition according to any one of claims 1 to 3.
  5. 　前記半導体装置の半導体素子上の封止材の厚みが２００μｍ以下であることを特徴とする請求項４に記載の半導体装置。 5. The semiconductor device according to claim 4, wherein the thickness of the sealing material on the semiconductor element of the semiconductor device is 200 μm or less.
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