JP5407767B2 - Epoxy resin composition and semiconductor device - Google Patents

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device, and in particular, a semiconductor element is mounted on one side of a printed wiring board or a metal lead frame, and only one side of the mounting side is a resin. It is preferably used for a sealed area mounting type semiconductor device.

  With the recent increase in functionality and speed of electronic devices, the amount of generated heat tends to increase. For this reason, there is an increasing demand for high heat dissipating properties for the epoxy resin composition for sealing, and various studies are being conducted on the inorganic filler constituting the epoxy resin composition. Until now, aluminum nitride, silicon nitride, and alumina have been mainly used as inorganic fillers with high thermal conductivity, but none of them has reached a level that satisfies the required characteristics as an epoxy resin composition. Aluminum nitride and silicon nitride have higher thermal conductivity than alumina. However, due to concerns about problems such as extremely low fluidity of the epoxy resin composition and significant wear of the mold during molding, they are widely spread. It hasn't been done yet. In contrast, alumina has a thermal conductivity that is inferior to that of aluminum nitride or silicon nitride, but it is relatively good in terms of fluidity and mold wear when used in a spheroidized form. In order to improve fluidity, a method focusing on the particle size distribution has been proposed, and a method of giving a maximum peak of the particle size distribution to 0.4 to 0.7 μm, 12 to 18 μm, and 30 to 38 μm (for example, see Patent Document 1). ), A method of paying attention to the regression coefficient of the regression equation of the Rosin-Rammler diagram (for example, see Patent Document 2).

  As a new movement in recent years, the use of lead-free solder having a higher melting point than before is increasing when mounting semiconductor devices for environmental reasons. The application of this solder requires that the mounting temperature be increased by about 20 ° C. compared to the conventional case, and there is a problem that the heat resistance of the semiconductor device after mounting is significantly reduced compared to the current situation. It has become to. In order to achieve low stress and low water absorption of a semiconductor device that can solve this, it is necessary to further increase the filling of the inorganic filler.

  Further, in the area mounting type semiconductor device which is increasing as the integration of semiconductor elements is increased, it is necessary to further increase the filling of the inorganic filler. Typical area-mounted semiconductor devices include BGA (ball grid array) or CSP (chip scale package) that pursues further miniaturization, and these are surface-mounted types typified by conventional QFP, SOP, and the like. The semiconductor device was developed to meet the demand for higher pin count and higher speed, which are approaching the limit. As a structure, on one side of a hard circuit board represented by BT resin / copper foil circuit board (bismaleimide / triazine resin / glass cloth board) or a flexible circuit board represented by polyimide resin film / copper foil circuit board. A semiconductor element is mounted, and only the semiconductor element mounting surface, that is, one side of the substrate is molded and sealed with an epoxy resin composition or the like. Also, solder balls are two-dimensionally formed in parallel on the surface opposite to the semiconductor element mounting surface of the substrate and bonded to the circuit substrate. When this semiconductor device is solder-bonded to a circuit board, a heating process of 200 ° C. or higher is performed. If warpage of the semiconductor device occurs at this time, a large number of solder balls do not become flat and float from the circuit board. Therefore, there arises a problem that the reliability of electrical connection is lowered.

  To reduce warpage in a semiconductor device in which only one surface on a substrate is sealed with an epoxy resin composition, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of a cured product of the epoxy resin composition are brought close to each other, and the epoxy resin composition Two methods are important for reducing the shrinkage of the cured product when it is molded and cured. As the substrate, a resin having a high glass transition temperature (hereinafter referred to as Tg) such as BT resin and polyimide resin is widely used in the organic substrate, and these are from around 170 ° C. which is the molding temperature of the epoxy resin composition. Also has a high Tg. Accordingly, in the cooling process from the molding temperature to room temperature, the glass shrinks only in the glass region of the organic substrate, in other words, in the region where the linear expansion coefficient is α1. Therefore, it is considered that the cured product of the epoxy resin composition has almost zero warpage if Tg is higher than the molding temperature, α1 is the same as that of the organic substrate, and curing shrinkage at the time of molding and curing is zero. For this reason, a technique for increasing Tg by combining a multifunctional epoxy resin and a multifunctional phenol resin and adjusting α1 by the blending amount of the inorganic filler has been proposed (for example, see Patent Document 3). However, since polyfunctional resins have high water absorption and viscosity, they tend to cause deformation of the gold wire and decrease in heat resistance. Therefore, low viscosity resins other than polyfunctional resins are used, and the epoxy resin composition is increased by increasing the filling of inorganic fillers. A technique has been used in which the thermal expansion coefficient of an object is brought close to the thermal expansion coefficient of a substrate to reduce curing shrinkage during molding and curing (see, for example, Patent Document 4).

  As described above, various methods for improving the fluidity of the resin composition in order to fill more alumina have been proposed. However, since attention is not paid to the constituent raw materials of the epoxy resin composition other than alumina. Sufficient performance is not obtained, and it does not reach a level that satisfies market demands.

JP-A-7-278415 (pages 2-9) JP-A-7-118506 (pages 2-6) JP-A-9-181226 (pages 2 to 9) JP2003-40979A (pages 2-6)

  The present invention has been made to solve the problems of the conventional background art, and the object of the present invention is to provide a semiconductor device after molding or mounting without deteriorating curability and other characteristics. An object of the present invention is to provide an epoxy resin composition suitable for semiconductor encapsulation that has both warpage and solder resistance, and a semiconductor device using the same.

The present invention
[1] Epoxy resin (A), phenol resin (B), curing accelerator (C), silane coupling agent (D) represented by general formula (1), spherical alumina (E), two naphthalene rings An epoxy resin composition for semiconductor encapsulation, comprising a compound (F) having an adjacent hydroxyl group and having or not having a substituent other than the hydroxyl group,

(R ¹ is an organic group having 1 to 12 carbon atoms. R ² , R ³ and R ⁴ are alkyl groups having 1 to 12 carbon atoms. N is an integer of 1 to 3)

[2] The epoxy resin composition for semiconductor encapsulation according to item [1], further containing 0.05 to 0.5% by weight of silicone oil (G) in the total epoxy resin composition,
[3] The epoxy resin composition for semiconductor encapsulation according to [1] or [2], wherein the particle size distribution of the spherical alumina (E) has a maximum point at 0.5 to 1 μm, 3 to 8 μm, or 36 to 50 μm. object,
[4] A semiconductor device comprising a semiconductor element sealed with the epoxy resin composition according to any one of [1], [2] or [3],
[5] A semiconductor element is mounted on one side of a substrate, and is used for sealing only substantially on one side of the substrate surface on which the semiconductor element is mounted. The epoxy resin (A) and the phenol resin (B) A curing accelerator (C), a silane coupling agent (D) represented by the general formula (1), a spherical alumina (E) having two adjacent hydroxyl groups on the naphthalene ring, and a substituent other than the hydroxyl group. An epoxy resin composition for area-mounting semiconductor encapsulation, comprising a compound (F) having or not having,

(R ¹ is an organic group having 1 to 12 carbon atoms. R ² , R ³ and R ⁴ are alkyl groups having 1 to 12 carbon atoms. N is an integer of 1 to 3)

[6] The epoxy resin composition for semiconductor encapsulation according to [5], further containing 0.05 to 0.5% by weight of silicone oil (G) in the total epoxy resin composition,
[7] The epoxy resin composition for semiconductor encapsulation according to [5] or [6], wherein the particle size distribution of the spherical alumina (E) has a maximum point at 0.5 to 1 μm, 3 to 8 μm, or 36 to 50 μm. object,
[8] A semiconductor element is mounted on one side of the substrate, and substantially only one side of the substrate surface on which the semiconductor element is mounted is the epoxy according to any one of [5], [6], or [7]. An area-mounting semiconductor device characterized by being sealed with a resin composition;
It is.

  According to the present invention, since it is possible to achieve both warpage and solder resistance performance that could not be obtained by the prior art, it is particularly suitable as an area mounting type semiconductor sealing epoxy resin composition and a semiconductor device using the same. is there.

The present invention can reduce the viscosity of an epoxy resin composition by using an epoxy resin composition containing an epoxy resin, a phenol resin, a curing accelerator, a silane coupling agent having a specific structure, spherical alumina, and a compound having a specific structure. Therefore, more inorganic filler can be filled. As a result, it is possible to obtain an effect that both warpage and solder resistance performance can be achieved. Further, since the warpage can be reduced by the above-described method, it is possible to suppress the amount of silicone oil added that requires a large amount of addition to reduce warpage. As a result, the effect of preventing a decrease in moisture resistance can also be obtained.
Hereinafter, the present invention will be described in detail.

  Examples of the epoxy resin used in the present invention include monomers, oligomers and polymers in general having two or more epoxy groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. For example, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenylene skeleton-containing phenol aralkyl type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, naphthol novolak type epoxy resin, triphenolmethane type epoxy resin , Dicyclopentadiene-modified phenol type epoxy resin, terpene-modified phenol type epoxy resin, hydroquinone type epoxy resin, and the like. These may be used alone or in combination. In view of increasing the inorganic filler, it is preferable to use a crystalline epoxy resin that is solid at room temperature and has a very low melt viscosity at the time of molding.

  Examples of the phenol resin used in the present invention include monomers, oligomers, and polymers in general having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. For example, phenol novolak resin, cresol Examples thereof include novolak resins, dicyclopentadiene-modified phenol resins, phenol aralkyl resins, phenol aralkyl resins having a biphenylene skeleton, terpene-modified phenol resins, and triphenolmethane type resins. These may be used alone or in combination. In addition, from the viewpoint of increasing the inorganic filler, a material having a low viscosity is preferable like the epoxy resin.

  The equivalent ratio of the number of epoxy groups of all epoxy resins and the number of phenolic hydroxyl groups of all phenol resins used in the present invention is preferably 0.5 to 2, and more preferably 0.7 to 1.5. If it is out of the above range, the moisture resistance, curability and the like may be lowered, which is not preferable.

  As a hardening accelerator used for this invention, what is necessary is just to accelerate the hardening reaction of an epoxy group and a phenolic hydroxyl group, and what is generally used for a sealing material can be used. For example, diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof, amine compounds such as tributylamine and benzyldimethylamine, imidazole compounds such as 2-methylimidazole, and triphenyl Organic phosphines such as phosphine, methyldiphenylphosphine, tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetraphenylphosphonium / tetranaphthoyloxyborate, tetraphenyl Tetra-substituted phosphonium / tetra-substituted borate such as phosphonium / tetranaphthyloxyborate (triphenylphosphine adducted with benzoquinone) Gerare, it no problem is used singly or in admixture.

When the silane coupling agent represented by the general formula (1) used in the present invention is used, the viscosity of the epoxy resin composition can be lowered as compared with the conventional silane coupling agent, so that the inorganic filler is filled more. As a result, warpage and solder resistance of the semiconductor device can be improved. In the silane coupling agent represented by the general formula (1) used in the present invention, preferably R ¹ is a phenyl group, R ² is an alkyl group having 1 to 3 carbon atoms, and R ³ and R ⁴ are methyl groups or An ethyl group is preferred. However, it is not limited to these, and may be used alone or in combination. The blending amount of the silane coupling agent used in the present invention is preferably 0.05 to 0.5% by weight in the total epoxy resin composition, and if it is less than the lower limit, the intended fluidity cannot be obtained, and the upper limit is set. If it exceeds, the curability may be impaired.
(R ¹ is an organic group having 1 to 12 carbon atoms. R ² , R ³ and R ⁴ are alkyl groups having 1 to 12 carbon atoms. N is an integer of 1 to 3)

  Further, other coupling agents may be used in combination as long as the effects of using the silane coupling agent represented by the general formula (1) are not impaired. Examples of coupling agents that can be used in combination include silane coupling agents such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, and vinyl silane, titanate coupling agents, aluminum coupling agents, aluminum / zirconium coupling agents, and the like. Is mentioned.

  In the present invention, spherical alumina is used as a filler for the purpose of imparting high thermal conductivity. The particle size distribution of the spherical alumina used in the present invention is not particularly defined, but the maximum point of the particle size distribution is 0.5 to 1 μm (hereinafter referred to as fine particles), 3 to 8 μm (hereinafter referred to as medium particles), 36 to. It is preferable to have a thickness of 50 μm (hereinafter referred to as coarse particles). If the maximum point of the fine particles is less than 0.5 μm or exceeds 1 μm, the fluidity may be impaired, and if the maximum point of the medium particles is less than 3 μm or more than 8 μm, the fluidity may be similarly impaired. Regarding coarse particles, when the maximum point exceeds 50 μm, there is a concern that unfilling may occur in a small semiconductor device having a narrow filling region, and flow may be hindered in a semiconductor device having a narrow interval between gold wires, thereby causing deformation of the gold wire. Arise. In the present invention, spherical alumina does not need to be used alone as a filler, and may be used in combination with, for example, fused spherical silica, fused crushed silica, crystalline silica, talc, titanium white, or silicon nitride. The blend amount of the spherical alumina used in the present invention is preferably 85 to 93% by weight in the total epoxy resin composition, and if it is less than the lower limit, the intended thermal conductivity cannot be obtained, and if it exceeds the upper limit, the fluidity is There is a risk of damage, which is not preferable.

Here, the particle size distribution of the spherical alumina is obtained according to JIS R 1622-1995 Sample preparation general rule for fine ceramic raw material particle size distribution measurement after collecting inorganic filler according to JIS M8100 powder mixture-general sampling method. In addition, an inorganic filler was prepared as a measurement sample, and a laser diffraction particle size distribution measuring device SALD manufactured by Shimadzu Corporation in accordance with a particle size distribution measuring method by a laser diffraction / scattering method of a JIS R 1629-1997 fine ceramic raw material. -7000 (laser wavelength: 405 nm) using water as a solvent and the refractive index of the inorganic filler measured under the conditions of a real part 1.80 and an imaginary part 1.00.
The specific surface area is a value measured by the BET 1-point method using nitrogen as an adsorbate in accordance with the method for measuring the specific surface area of the fine ceramic powder by the gas adsorption BET method of JIS R 1626-1996.

The compound (F) (hereinafter referred to as compound (F)) having two adjacent hydroxyl groups in the aromatic ring used in the present invention and having or not having a substituent other than the hydroxyl group is represented by the formula: The compound represented by (2) or formula (3) is preferable, and examples thereof include catechol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof. Of these, compounds (1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof) in which the mother nucleus is a naphthalene ring are more preferred from the viewpoint of ease of control and low volatility. Two or more of these compounds ( F ) may be used in combination. In addition, the compounding quantity of this compound ( F ) is 0.01 to 0.5 weight% in all the epoxy resin compositions, Preferably it is 0.02 to 0.3 weight%. Viscosity and flow characteristics that are expected to be less than the lower limit cannot be obtained, and if the upper limit is exceeded, curing of the epoxy resin composition is inhibited, and physical properties of the cured product are inferior, resulting in performance as a semiconductor sealing resin. Since it deteriorates, it is not preferable.

(One of R ⁵ and R ⁹ is a hydroxyl group, and when one of them is a hydroxyl group, the other is a substituent other than hydrogen or a hydroxyl group, and R ⁶ , R ⁷ and R ⁸ are substituents other than hydrogen, a hydroxyl group or a hydroxyl group.)

(R ¹⁰ and R ¹⁶ are either hydroxyl groups, and when one is a hydroxyl group, the other is hydrogen or a substituent other than a hydroxyl group, R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ are hydrogen, hydroxyl group or hydroxyl group. Other substituents.)

  In the present invention, in addition to the above components, 0.05 to 0.5% by weight of silicone oil can be added to the total epoxy resin composition. The silicone oil used in the present invention is not particularly limited in the average degree of polymerization, and in order to impart affinity with epoxy resin, phenol resin, and inorganic filler, in addition to methyl group and phenyl group, C, O, N, You may have an organic group containing S atom etc. Silicone oils may be used alone or in combination. By adding silicone oil, mold releasability at the time of molding can be imparted. In addition, since the elasticity can be lowered depending on the type and amount of silicone oil, it is possible to reduce the warpage of the semiconductor device and to relieve the stress generated during the temperature cycle test. However, if the amount of silicone oil exceeds the upper limit, depending on the type of silicone oil, it is not preferable because it tends to cause a decrease in glass transition temperature and a decrease in moisture resistance due to a decrease in interfacial adhesion with members in a semiconductor device. . On the other hand, if the lower limit is not reached, mold releasability during molding may be insufficient.

  In addition to the components (A) to (G), the epoxy resin composition of the present invention includes, as necessary, natural wax such as carnauba wax, synthetic wax such as polyethylene wax, higher fatty acid such as stearic acid and zinc stearate and the like. Release agents such as metal salts or paraffin, colorants such as carbon black and bengara, brominated epoxy resins, antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene and other flame retardants, oxidation Various additives such as inorganic ion exchangers such as bismuth hydrate and antioxidants can be appropriately blended.

  In the epoxy resin composition of the present invention, the components (A) to (G) and other additives are mixed at room temperature using a mixer or the like, and heated and kneaded with a kneader such as a roll, kneader, or extruder, and cooled. Obtained by post-grinding.

  In order to seal an electronic component such as a semiconductor element and manufacture a semiconductor device using the epoxy resin composition of the present invention, it can be cured by a conventional molding method such as transfer molding, compression molding, injection molding, etc. Good. As other semiconductor device manufacturing methods, known methods can be used.

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The blending ratio is parts by weight.
Example 1
Biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX4000K, melting point 105 ° C., epoxy equivalent 185) 4.67 parts by weight Phenol novolac resin (softening point 80 ° C., hydroxyl group equivalent 105) 1.74 parts by weight Phenol aralkyl resin (Maywa Kasei Co., Ltd., MEH-7851SS, softening point 65 ° C., hydroxyl group equivalent 203) 1.74 parts by weight Triphenylphosphine 0.15 parts by weight

Silane coupling agent represented by formula (4) 0.20 parts by weight

Alumina B (average particle size 38 μm, specific surface area 0.1 m ² / g, maximum point particle size 38 μm)
55.00 parts by weight Alumina F (average particle size 3 μm, specific surface area 0.8 m ² / g, maximum point particle size 3 μm)
22.50 parts by weight Alumina I (average particle size 0.7 μm, specific surface area 6.3 m ² / g, maximum point particle size 0.7 μm)
10.00 parts by weight Silica A (average particle size 0.5 μm, specific surface area 6.5 m ² / g) 3.00 parts by weight Silica B (primary particles 12 nm, specific surface area 200 m ² / g) 0.50 parts by weight 2, 3-dihydroxynaphthalene (reagent) 0.20 parts by weight

Silicone oil represented by formula (5) 0.30 parts by weight

Carnauba wax 0.20 part by weight Carbon black 0.30 part by weight was mixed with a mixer, then kneaded using two rolls with surface temperatures of 90 ° C. and 45 ° C., cooled and ground to obtain an epoxy resin composition. . The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 1.

Evaluation method Spiral flow: Using a mold for spiral flow measurement according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 2 minutes. The unit is cm.

  Gold wire deformation rate: A 352-pin BGA package molded by evaluation of the amount of warpage of the package was observed with a soft X-ray fluoroscope, and the deformation rate of the gold wire was expressed as a ratio of (flow amount) / (gold wire length). Units%.

  Package warpage amount: Using a transfer molding machine, mold temperature of 175 ° C., injection pressure of 6.9 MPa, curing time of 2 minutes, 352 pin BGA (substrate is bismaleimide / triazine resin / glass cloth substrate with a thickness of 0.56 mm, semiconductor The size of the device is 30 mm × 30 mm, the thickness is 1.17 mm, the size of the semiconductor element is 10 mm × 10 mm, the thickness is 0.35 mm, and the bonding pad of the semiconductor element and the circuit board is bonded with a 25 μm diameter gold wire. A sample was obtained by molding and post-curing at 175 ° C. for 2 hours. After 10 semiconductor devices obtained were cooled to room temperature, the displacement in the height direction was measured using a surface roughness meter in the diagonal direction from the gate of the package, and the value with the largest variation difference was taken as the amount of warpage. The unit is μm.

  Burr length: The length of the resin burr leaking from the vent part having a thickness of about 30 μm of the 352-pin BGA package formed by the evaluation of the amount of warping of the package was measured. The unit is mm.

  Solder resistance: 352-pin BGA package molded by evaluation of package warpage amount is post-cured at 175 ° C. for 2 hours, and each of the obtained 10 semiconductor devices is 168 hours in an environment of 60 ° C. and 60% relative humidity. Or, after being treated for 168 hours in an environment of 85 ° C. and 60% relative humidity, IR reflow treatment (255 ° C. or more is 10 seconds) at a peak temperature of 260 ° C. was performed. The presence or absence of internal peeling and cracks after the treatment was observed with an ultrasonic flaw detector, and the number of defective semiconductor devices was counted. When the number of defective semiconductor devices was n, it was displayed as n / 10.

  Moisture resistance: Using a transfer molding machine, mold temperature of 175 ° C., injection pressure of 9.8 MPa, curing time of 2 minutes, 16 pSOP (mold size 11 mm × 7 mm, thickness 1.95 mm, semiconductor element size 3.5 mm × 3.0 mm The semiconductor element bonding pad and 42 alloy frame are bonded to each other at 12 locations with a 25 μm diameter gold wire. The semiconductor element has an aluminum wiring width of 10 μm, an inter-wiring distance of 10 μm, and an aluminum deposition thickness of 1 μm. A sample was obtained by molding and post-curing at 175 ° C. for 2 hours. After 5 semiconductor devices obtained were cooled to room temperature, 20 V was applied in an environment of 140 ° C. and 85% relative humidity (6 of the 6 bonded locations were anodes and 6 locations were cathodes), treated for 500 hours, and then packaged. The resistance value of the circuit was measured by applying a tester to each terminal. When the resistance value exceeded 200% of the initial value, it was regarded as defective, and indicated as n / 15 when there were n defective portions (anode: 3 locations × 5, cathode: 3 locations × 5).

Examples 2 to 9 , 11 to 8, Reference Example 10, Comparative Examples 1 to 6
According to the composition of Table 1, Table 2, and Table 3, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner. These evaluation results are shown in Table 1, Table 2, and Table 3.
Alumina, silicone oil, etc. used other than Example 1 are shown below.
1,8-diazabicyclo (5,4,0) undecene-7
γ-mercaptopropyltrimethoxysilane γ-glycidoxypropyltrimethoxysilane alumina A (average particle size 33 μm, specific surface area 0.3 m ² / g, maximum point particle size 33 μm)
Alumina C (average particle size 49 μm, specific surface area 0.1 m ² / g, maximum point particle size 49 μm)
Alumina D (average particle size 55 μm, specific surface area 0.1 m ² / g, maximum point particle size 55 μm)
Alumina E (average particle size 1.5 μm, specific surface area 5.0 m ² / g, maximum point particle size 1.5 μm)
Alumina G (average particle size 7 μm, specific surface area 0.4 m ² / g, maximum point particle size 7 μm)
Alumina H (average particle size 10 μm, specific surface area 0.4 m ² / g, maximum point particle size 10 μm)
1,2-dihydroxynaphthalene (reagent)
Catechol 1,6-dihydroxynaphthalene (reagent)
Resorcinol (reagent)

Silicone oil represented by formula (6)

  The epoxy resin composition for semiconductor encapsulation of the present invention has excellent warpage, solder resistance, and moisture resistance, and is useful for application to fields requiring these characteristics, such as area mounting type semiconductor devices. is there.

Claims (8)

Two adjacent epoxy resins (A), phenolic resin (B), curing accelerator (C), silane coupling agent (D) represented by general formula (1), spherical alumina (E), and naphthalene ring An epoxy resin composition for semiconductor encapsulation, comprising a compound (F) having a hydroxyl group and having or not having a substituent other than the hydroxyl group.

(R ¹ is an organic group having 1 to 12 carbon atoms. R ² is an alkylene group having 1 to 12 carbon atoms. R ³ and R ⁴ are alkyl groups having 1 to 12 carbon atoms. N is an integer of 1 to 3) The epoxy resin composition for semiconductor encapsulation according to claim 1, further comprising 0.05 to 0.5% by weight of silicone oil (G) in the total epoxy resin composition. 3. The epoxy resin composition for encapsulating a semiconductor according to claim 1, wherein the spherical alumina (E) has a particle size distribution of three points of 0.5 to 1 μm, 3 to 8 μm , and 36 to 50 μm. . A semiconductor device comprising a semiconductor element sealed with the epoxy resin composition according to claim 1. A semiconductor element is mounted on one side of a substrate, and is used for sealing substantially only one side of the substrate surface on which this semiconductor element is mounted. Epoxy resin (A), phenol resin (B), curing acceleration Agent (C), silane coupling agent (D) represented by general formula (1), spherical alumina (E), and having two adjacent hydroxyl groups on the naphthalene ring, and having a substituent other than the hydroxyl group Or an epoxy resin composition for encapsulating an area-mounting semiconductor, comprising a compound (F) that does or does not exist.

(R ¹ is an organic group having 1 to 12 carbon atoms. R ² is an alkylene group having 1 to 12 carbon atoms. R ³ and R ⁴ are alkyl groups having 1 to 12 carbon atoms. N is an integer of 1 to 3) The epoxy resin composition for area mounting type semiconductor encapsulation according to claim 5, further comprising 0.05 to 0.5% by weight of silicone oil (G) in the total epoxy resin composition. The area-mounting type semiconductor sealing epoxy according to claim 5 or 6, wherein the spherical alumina (E) has a particle size distribution of 0.5 to 1 µm, 3 to 8 µm , and 36 to 50 µm at three points. Resin composition. 8. The area mounting type semiconductor sealing epoxy resin composition according to claim 5, wherein a semiconductor element is mounted on one side of the substrate, and substantially only one side of the substrate side on which the semiconductor element is mounted. An area-mounting semiconductor device which is sealed with an object.