WO2020021656A1 - 半導体遮断器及び遮断装置 - Google Patents
半導体遮断器及び遮断装置 Download PDFInfo
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- WO2020021656A1 WO2020021656A1 PCT/JP2018/027901 JP2018027901W WO2020021656A1 WO 2020021656 A1 WO2020021656 A1 WO 2020021656A1 JP 2018027901 W JP2018027901 W JP 2018027901W WO 2020021656 A1 WO2020021656 A1 WO 2020021656A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/083—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for three-phase systems
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/093—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current with timing means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/021—Details concerning the disconnection itself, e.g. at a particular instant, particularly at zero value of current, disconnection in a predetermined order
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/033—Details with several disconnections in a preferential order, e.g. following priority of the users, load repartition
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
Definitions
- the present invention relates to a semiconductor circuit breaker and a circuit breaker that cut off current using a semiconductor switch.
- Circuit breakers installed in switchboards, control panels, etc. open and close the load current supplied to the load, and cut off the fault current that occurs when a fault such as a short circuit or ground fault occurs in the load or the power system leading to it.
- a mechanical circuit breaker such as a gas circuit breaker, a vacuum circuit breaker, and an air circuit breaker is generally used.
- a high-temperature discharge called an arc occurs at the time of breaking. Since the arc has the property that it does not extinguish unless the current value becomes zero, the mechanical circuit breaker in the AC power system has a timing at which the current value visited every half cycle of the AC becomes zero (hereinafter referred to as current zero point). The current is interrupted at.
- Patent Literature 1 discloses a semiconductor AC circuit breaker that uses a thyristor as a semiconductor switch and turns off the thyristor by discharging a precharged commutation capacitor when a short circuit occurs.
- a semiconductor circuit breaker using a thyristor or triac as a semiconductor switch has the characteristic that the current is not interrupted up to the current zero point. May exceed the current withstand capability. Therefore, it is necessary to use a semiconductor switch having a large current capacity or to connect a large number of semiconductor switches in parallel, and there is a problem that the semiconductor circuit breaker is increased in size and cost.
- a semiconductor circuit breaker using a self-extinguishing type semiconductor switch such as a MOSFET, an IGBT, or a power transistor instead of a semiconductor switch such as a thyristor or a triac has been developed.
- conduction and non-conduction are controlled by the control signal, so that the current can be cut off before reaching the current withstand capability of the semiconductor switch without waiting for the current zero point.
- a semiconductor switch unit that switches between conduction and non-conduction between a power supply device and a load device based on a control signal is provided, and a current detected by a current detector is equal to or greater than a predetermined current threshold.
- a semiconductor circuit breaker that shuts off a semiconductor switch unit when it is determined is disclosed.
- the present invention has been made in order to solve the above-described problems, and suppresses the occurrence of a surge voltage when the power system is operating normally, while immediately interrupting the current when an accident occurs.
- An object of the present invention is to provide a semiconductor circuit breaker that can be reduced in size and cost by interrupting a current.
- a semiconductor circuit breaker is connected to an AC circuit, and has a semiconductor switch unit whose conduction and non-conduction is controlled based on a control signal, and an accident detection unit that detects an accident based on a current detected from the AC circuit. And a zero point detector for detecting a current zero based on the current detected from the AC circuit, and when the accident detector detects an accident or when the zero detector detects a current zero point in response to a command to cut off the current.
- a control signal output unit for outputting a control signal for turning off the semiconductor switch unit.
- the circuit breaker according to the present invention includes a semiconductor circuit breaker connected to a branch line branched from a bus connected to a power supply, and a current limiter connected in parallel to a main switch connected to the bus. .
- the semiconductor circuit breaker when an accident is detected or when a current zero point is detected in response to a command to cut off current, a control signal for turning off the semiconductor switch unit is output,
- the current that is supplied to the load when the power system is normal can be cut off by suppressing the generation of high-voltage surge voltage while shutting off the current flowing when an accident occurs before reaching the current withstand capability of the semiconductor switch section.
- the circuit breaker can be reduced in size and cost.
- the current limiter is connected in parallel with the main switch, so that when an accident occurs, the current flowing from the power supply side toward the load side is limited, and the semiconductor circuit breaker is limited. The current can be cut off immediately.
- FIG. 1 is a schematic configuration diagram of a semiconductor circuit breaker according to Embodiment 1 of the present invention.
- FIG. 2 is a schematic configuration diagram of a semiconductor switch unit of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- 1 is a schematic configuration diagram of a semiconductor circuit breaker according to Embodiment 1 of the present invention.
- 5 is a flowchart showing an operation of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- FIG. 4 is an explanatory diagram for describing an operation of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- FIG. 6 is a schematic configuration diagram of a semiconductor circuit breaker according to Embodiment 2 of the present invention.
- FIG. 6 is a flowchart showing an operation of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- FIG. 9 is an explanatory diagram for explaining an operation of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- FIG. 6 is a schematic configuration diagram of a semiconductor circuit breaker according to Embodiment 2 of the present invention. 6 is a flowchart showing an operation of the semiconductor circuit breaker according to Embodiment 2 of the present invention. 6 is a flowchart showing an operation of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- FIG. 13 is an explanatory diagram for explaining an operation of the semiconductor circuit breaker according to Embodiment 3 of the present invention.
- FIG. 13 is an explanatory diagram for explaining an operation of the semiconductor circuit breaker according to Embodiment 3 of the present invention.
- FIG. 13 is a schematic configuration diagram of a power system to which a shutoff device according to a fourth embodiment of the present invention is applied.
- FIG. 13 is a schematic configuration diagram of a semiconductor circuit breaker according to Embodiment 4 of the present invention.
- FIG. 13 is a schematic configuration diagram of a power system to which a shutoff device according to a fourth embodiment of the present invention is applied. It is a schematic structure figure of a phase control part of a semiconductor circuit breaker concerning Embodiment 5 of the present invention.
- FIG. 13 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 6 of the present invention.
- FIG. 13 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 6 of the present invention.
- FIG. 13 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 6 of the present invention.
- FIG. 13 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 6 of the present invention.
- FIG. 13 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 6 of the present invention.
- FIG. 1 is a schematic configuration diagram showing a semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the semiconductor circuit breaker 100 includes semiconductor switches 10r, 10s, and 10t connected to the r, s, and t phases, respectively.
- phase control units 20r, 20s, and 20t are connected between an AC power supply and a load, and each phase is provided with a current detector 30r, 30s, 30t for detecting a current.
- each part having the same name provided in each of the r-phase, s-phase, and t-phase has the same configuration and function, and when describing the same configuration and function of each part, a semiconductor
- the switch unit 10, the phase control unit 20, and the current detector 30 are described.
- FIG. 2 is a schematic configuration diagram showing a semiconductor switch section of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the semiconductor switch unit 10 switches between conduction and non-conduction according to a control signal output from the phase control unit 20.
- the semiconductor switch unit 10 is, for example, an IGBT (Insulated Gate Bipolar Transistor).
- the semiconductor switch unit 10 includes a first semiconductor element 11a, a first diode 12a connected in parallel with the first semiconductor element 11a, and having a current flowing in a direction opposite to the current of the first semiconductor element 11a.
- the semiconductor device includes a second semiconductor element 11b connected in a direction opposite to the first semiconductor element 11a, and a second diode 12b for flowing a current in a direction opposite to the current of the second semiconductor element 11b.
- the semiconductor switch unit 10 is an IGBT.
- any device can be used as long as conduction and non-conduction are controlled by a control signal. Off @ thyristor) or the like.
- FIG. 3 is a schematic configuration diagram showing a phase control unit of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the phase control unit 20 detects an accident based on the current detected by the current detector 30, and detects a current zero point based on the current detected by the current detector 30.
- the accident detection unit 21 acquires the current signal S1 from the current detector 30 and determines that an accident has occurred when the current value or the amount of change in the current value is equal to or greater than a predetermined threshold, and outputs the accident detection signal S2 to the control signal output unit. 23.
- the threshold is set to be equal to or less than the current withstand capability of the semiconductor switch unit 10.
- the zero point detection unit 22 acquires the current signal S1 from the current detector 30, detects when the current value is zero or when the sign of the current value is inverted as a current zero point, and outputs the zero point detection signal S3 to the control signal output unit. 23.
- the zero point detection unit 22 may always detect the current zero point from the current signal S1, or may receive, for example, a command signal S5 for commanding to shut off the current from an externally provided operation unit 40 that can be operated by a user. After that, the detection of the current zero point may be started.
- the operation unit 40 is a signal source such as a mechanical switch or another control device that outputs the command signal S5.
- the zero point detection unit 22 may start detecting the current zero point after receiving the accident detection signal S2 for commanding to cut off the current output from the phase control unit 20 of another phase.
- FIG. 3 shows an example in which the command signal S5 from the operation unit 40 is input to the zero point detection unit 22.
- the operation signal from the operation unit 40 The command signal S5 may be input to the control signal output unit 23.
- the control signal output unit 23 outputs the ON control signal S4a when the semiconductor switch unit 10 is turned on, and outputs the OFF control signal S4b to the semiconductor switch unit 10 when the semiconductor switch unit 10 is turned off.
- the control signal output unit 23 outputs an off control signal S4b to the semiconductor switch unit 10 according to the accident detection signal S2 output from the accident detection unit 21.
- the control signal output unit 23 outputs an off control signal S4b to the semiconductor switch unit 10 according to the zero point detection signal S3 output from the zero point detection unit 22.
- the phase control unit 20 may be configured by, for example, a digital circuit having an A / D converter, a CPU such as a microprocessor, and an input / output circuit, or may be configured by an analog circuit.
- the current detector 30 may be provided in the semiconductor circuit breaker 100, or may use, for example, a CT provided in an AC circuit outside the semiconductor circuit breaker 100.
- FIG. 4 is a flowchart illustrating an example of the operation of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the phase control unit 20 of the semiconductor circuit breaker 100 acquires the current signal S1 from the current detector 30 (ST1).
- the accident detection unit 21 determines whether the current value or the amount of change in the current value is equal to or greater than a predetermined threshold based on the obtained current signal S1 (ST2). If the accident is equal to or greater than the threshold value, the accident detection unit 21 determines that an accident has occurred, and outputs an accident detection signal S2 to the control signal output unit 23 (ST3).
- the zero point detecting unit 22 detects the current zero point based on the acquired current signal S1 (ST5). When the current zero point is detected, the zero point detection unit 22 outputs a zero point detection signal S3 to the control signal output unit 23 (ST6).
- the control signal output unit 23 outputs an off control signal S4b for turning off the semiconductor switch unit 10 to the semiconductor switch unit 10 according to the accident detection signal S2 or the zero point detection signal S3 (ST7).
- non-conduction at the current zero point includes non-conduction after a lapse of a delay time ⁇ td required for signal processing of the phase control unit 20 from the detected current zero point.
- FIG. 5 is an explanatory diagram for explaining the operation of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the vertical axis shows the current value (kA), and the horizontal axis shows time (s).
- the current value and the amount of time change of the current value increase.
- semiconductor breaker 100 according to the present embodiment determines that an accident has occurred at time Tb when a current value equal to or greater than a predetermined threshold value Rmax is detected. Can be quickly shut off before the current withstand current Cmax is reached.
- the control signal output unit 23 turns off the semiconductor switch unit 10. And outputs an off control signal S4b.
- the load is an inductive load such as a motor
- the load is cut off, and the inductance L of the load and the semiconductor switch Generation of a high surge voltage corresponding to the product L ⁇ (dI / dt) of the current I flowing through the section 10 and the time variation dI / dt can be suppressed.
- the semiconductor circuit breaker 100 is cut off without waiting for the current zero point without being affected by the inductance component of the load because the semiconductor circuit breaker 100 is separated from the load at the point of the accident. However, no surge voltage is generated by the load.
- the semiconductor switch unit 10 in order to prevent the semiconductor switch unit 10 from being destroyed by the surge voltage, it is not necessary to use the semiconductor switch unit 10 having high withstand voltage performance or to use an arrester such as an arrester or a varistor that absorbs surge energy.
- the size and cost of the semiconductor circuit breaker 100 can be reduced.
- FIG. FIG. 6 is a schematic configuration diagram of a phase control unit of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- the phase control units 20r, 20s, and 20t control the semiconductor switch units 10r, 10s, and 10t, respectively.
- the phase control units 20r, 20s, and 20t communicate with each other.
- the connected phase control unit 20 of the phase in which the accident has occurred at the time of the accident controls the semiconductor switch unit 10 of another normal phase.
- description of the same points as in the first embodiment will be omitted, and different points will be mainly described.
- FIG. 7 is a flowchart showing an example of the operation of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- the r-phase control unit 20r acquires the current signal S1 from the current detector 30r that detects the current flowing in the r-phase (ST101).
- the r-phase accident detection unit 21r determines whether the current value or the amount of change in the current value is equal to or greater than a predetermined threshold based on the obtained current signal S1 (ST102).
- the r-phase fault detection unit 21r determines that a fault has occurred when the value is equal to or greater than the threshold, and outputs the fault detection signal S2 to the r-phase control signal output unit 23r and the s-phase and t-phase zero-point detection units 22s and 22t, respectively. Is output (ST103).
- the r-phase control signal output unit 23r outputs an off-control signal S4b for turning off the semiconductor switch unit 10 to the r-phase semiconductor switch unit 10r in response to the accident detection signal S2 from the r-phase accident detection unit 21r. Output (ST104).
- the r-phase semiconductor switch unit 10r becomes non-conductive and interrupts the current before reaching the current withstand capability of the semiconductor switch unit 10 without waiting for the current zero point (ST105).
- the s-phase and t-phase zero point detectors 22s and 22t acquire the current signals S1 from the current detectors 30s and 30t that detect the currents flowing in the s-phase and t-phase, respectively (ST106).
- the s-phase and t-phase zero point detection units 22s and 22t receive the accident detection signal S2 from the r-phase accident detection unit 21r as a signal for commanding the interruption of the current, based on the current signal S1 acquired from each phase. , Respectively, to detect a current zero point (ST107). Then, when the current zero point is detected, the zero point detection signal S3 is output to the s-phase and t-phase control signal output units 23s and 23t, respectively (ST108).
- the s-phase and t-phase control signal output units 23s and 23t output an off-control signal S4b for turning off the s-phase and t-phase semiconductor switch units 10s and 10t in response to the zero point detection signal S3 (ST109). .
- the s-phase and t-phase semiconductor switch units 10s and 10t cut off the current at the current zero point according to the off control signal S4b (ST110).
- FIG. 8 is an explanatory diagram for describing an example of the operation of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- the vertical axis indicates the current value (kA), and the horizontal axis indicates time (s).
- currents Ir, Is, and It flow in the r, s, and t phases, respectively.
- the off-control signal S4b is output without waiting for the current zero point, and the current Ir is interrupted at the time T1 before the current withstand capability of the semiconductor switch unit 10r is reached.
- the current Is in the s-phase and the current It in the t-phase are cut off at time T3 and time T2, respectively, at which the current reaches zero.
- FIG. 9 is a schematic configuration diagram of a phase control unit of the semiconductor circuit breaker according to Embodiment 2 of the present invention.
- transmission and reception of signals in a specific case described below are indicated by arrows, and transmission and reception of signals between the accident detection unit 21t and the control signal output unit 23t are omitted.
- FIG. 10 is a flowchart showing the operation of the r-phase phase control unit of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the r-phase phase control unit 20r acquires the current signal S1 from the r-phase current detector 30r (ST201R).
- the r-phase accident detection unit 21r determines whether the current value or the amount of change in the current value is equal to or greater than a predetermined threshold based on the acquired current signal S1 (ST202R).
- the r-phase fault detection unit 21r determines that a fault has occurred when the value is equal to or greater than the threshold value, and outputs the fault detection signal S2 to the r-phase control signal output unit 23r and the s-phase and t-phase zero-point detection units 22s and 22t. Output (ST203R).
- the s-phase accident detection section 21s acquires the current signal S1 from the s-phase current detector 30s (ST201S). Based on the obtained current signal S1, the s-phase accident detection unit 21s determines whether the current value or the amount of change in the current value is equal to or greater than a predetermined threshold (ST202S). If the s-phase fault detection unit 21s is equal to or larger than the threshold value, the fault is determined to be a fault, and the fault detection signal S2 is sent to the s-phase control signal output unit 23s and the r-phase and t-phase zero-point detection units 22r and 22t. Output (ST203S).
- the r-phase zero point detection unit 22r receives the accident detection signal S2 from the s-phase accident detection unit 21s as a signal for commanding the interruption of the current (ST204R). Then, the current zero point is detected based on the current signal S1 acquired from the r-phase current detector 30r (ST205R). Then, when the current zero point is detected, the zero point detection signal S3 is output to the r-phase control signal output unit 23r (ST206R).
- the r-phase control signal output unit 23r outputs the OFF control signal S4b in response to the signal input earlier among the accident detection signal S2 from the accident detection unit 21r and the zero detection signal S3 from the zero detection unit 22r. Is output to the r-phase semiconductor switch unit 10r (ST207R). The semiconductor switch unit 10r becomes non-conductive by the off control signal S4b and cuts off the current (ST208R).
- the s-phase zero point detection unit 22s receives the accident detection signal S2 from the r-phase accident detection unit 21r as a signal for commanding the interruption of the current (ST204S). Then, a current zero point is detected based on the current signal S1 obtained from the s-phase current detector 30s (ST205S). Then, when the current zero point is detected, the zero point detection signal S3 is output to the s-phase control signal output unit 23s (ST206S).
- the s-phase control signal output unit 23s outputs the OFF control signal S4b in accordance with the signal input first among the accident detection signal S2 from the accident detection unit 21s and the zero detection signal S3 from the zero detection unit 22s. Is output to the s-phase semiconductor switch section 10s (ST207S). The semiconductor switch unit 10s is turned off by the off control signal S4b and cuts off the current (ST208S).
- FIG. 11 is a flowchart showing the operation of the t-phase phase control unit of the semiconductor circuit breaker according to Embodiment 1 of the present invention.
- the t-phase zero point detection unit 22t acquires the current signal S1 from the t-phase current detector 30t (ST209).
- the t-phase zero point detection unit 22t receives the fault detection signal S2 from the r-phase and s-phase fault detection units 21r and 21s as a signal for commanding the interruption of the current, respectively (ST210).
- a current zero point is detected based on the current signal S1 acquired from the t-phase current detector 30t according to the previously input signal (ST211).
- the zero point detection signal S3 is output to the t-phase control signal output unit 23t (ST212).
- the t-phase control signal output unit 23t outputs the off-control signal S4b to the t-phase semiconductor switch unit 10t according to the zero point detection signal S3 (ST213).
- the t-phase semiconductor switch unit 10t becomes non-conductive at the current zero point in response to the off control signal S4b, and cuts off the current (ST214).
- the same operation as the above-described operation is performed. Omitted because there is.
- the above-described operation may be partially performed before or after. Further, the operations (ST201R) to (ST208R) of the r-phase control unit 20r and the operations (ST201S) to (ST208S) of the s-phase control unit 20s may be performed simultaneously.
- the semiconductor circuit breaker 100 when an accident is detected, the semiconductor circuit breaker 100 according to the present embodiment immediately shuts off the current before reaching the current withstand capability of the semiconductor switch unit 10, and issues a command to shut off the current. In such a case, generation of a surge voltage can be suppressed by interrupting the current at the current zero point. Further, in the present embodiment, when the accident detection unit 21 detects an accident in at least one phase, the control signal output unit 23 of the phase in which the accident is detected is turned off to the semiconductor switch unit 10 of the phase in which the accident is detected.
- the control signal output unit 23 outputs the control signal S4b, and the control signal output unit 23 of another phase different from the phase in which the accident is detected receives the command to cut off the current from the accident detection unit 21 of the phase in which the accident is detected, and When the zero point detection unit 22 detects the current zero point, it outputs an off control signal S4b to the semiconductor switch unit 10 of another phase.
- the semiconductor switch section 10 of the phase in which the fault has occurred is immediately turned off after the fault is detected, and the semiconductor switch sections 10 of the other normal phases are turned off at the current zero point detected after the fault is detected.
- the semiconductor switch section 10 of the normal phase non-conductive at the current zero point, the occurrence of the surge voltage is suppressed, and the fault current flowing in the faulty phase is transferred to the other normal phases. It can prevent sneaking around.
- FIG. 12 is an explanatory diagram for explaining an example of the operation of the semiconductor circuit breaker according to Embodiment 3 of the present invention.
- the vertical axis indicates the current value (kA), and the horizontal axis indicates time (s).
- the zero point detection unit 22 outputs the off control signal S4b for turning off the semiconductor switch unit 10 when the current zero point is detected, the currents Ir, Is, and It flowing through each phase are detected. It may not be cut off just at the current zero point, but may be cut off after a delay time ⁇ td has elapsed from the detected current zero point.
- the delay time ⁇ td is, for example, the sampling rate of the A / D converter and the processing time of the CPU. In the case of an analog circuit, this is a delay time due to a delay in analog signal processing in an internal circuit.
- the zero point detection unit 22 estimates a later current zero point, for example, from the cycle of the detected current zero point.
- the later current zero point may be a current zero point at a time several cycles later estimated from the current detected current.
- the zero point detection unit 22 estimates a delay time ⁇ td required for the control signal output unit 23 to output the control signal.
- a zero point detection signal S3 is output at a time before the delay time ⁇ td from the time Tc estimated as the current zero point.
- the control signal output unit 23 outputs an off control signal S4b to the semiconductor switch unit 10 when the current reaches the estimated zero point according to the zero point detection signal S3.
- the semiconductor circuit breaker 100 when an accident is detected, the semiconductor circuit breaker 100 according to the present embodiment immediately shuts off the current before reaching the current withstand capability of the semiconductor switch unit 10, and issues a command to shut off the current. In such a case, generation of a surge voltage can be suppressed by interrupting the current at the current zero point.
- a configuration is adopted in which the time Tc at which the current is zero later is estimated, and the zero point detection signal S3 is output at a time earlier than the estimated time Tc and before the delay time ⁇ td. With this configuration, it is possible to reduce the effect of the delay time ⁇ td from when the phase control unit 20 detects the current zero point to when the phase control unit 20 outputs the off control signal S4b.
- FIG. 13 is an explanatory diagram for explaining the operation of the semiconductor circuit breaker according to Embodiment 3 of the present invention.
- the vertical axis indicates the current value (kA)
- the horizontal axis indicates time (s).
- the current waveforms of the currents Is and It flowing in the other normal s-phase and t-phase may be different from the normal periodic current waveform due to, for example, the effect of an accident occurring in the r-phase.
- the zero point detection unit 22 outputs a zero point detection signal S3 when the current zero point is obtained after analyzing and estimating the transient current waveform after the occurrence of the accident.
- the transient current waveform after the occurrence of the accident is analyzed using, for example, fitting using a sine function or polynomial approximation using the least squares method.
- the zero point detection unit 22 may output the zero point detection signal S3 before the delay time ⁇ td from the time Tc estimated as the current zero point later.
- the periodicity up to the current zero point after the other phase due to the occurrence of the accident in one phase is Even when the time interval changes, the current flowing in other normal phases can be cut off at the current zero point, and the generation of surge voltage can be further suppressed.
- FIG. 14 is a schematic configuration diagram showing a power system to which the shutoff device according to Embodiment 4 of the present invention is applied.
- a main switch 2 is connected in series with a power supply 1 to a bus 3 connected to a power supply 1, and a bus 3 on the opposite side of the power supply 1 of the main switch 2 is provided with:
- Two branch lines 4a and 4b are provided.
- Induction motors 5a, 5b are connected to the branch lines 4a, 4b as loads, and power is supplied from the power supply 1.
- the power source 1 is, for example, an external general power generation facility.
- the master switch 2 is, for example, a mechanical circuit breaker or a semiconductor circuit breaker.
- FIG. 14 shows an example in which the load is the induction motors 5a and 5b, but may be an inductive load such as a motor, a reactor, a transformer, or a resistance load.
- Circuit breaker 200 is connected to semiconductor circuit breakers 100a and 100b connected to branch lines 4a and 4b branched from bus 3 connected to power supply 1 and main switch 2 connected to bus 3 in parallel. And a flow device 6.
- cutoff device 200 current-limits current flowing from current source 6 toward power source 1 toward induction motors 5a and 5b.
- the current limiter 6 is, for example, a resistor or a reactor.
- FIG. 14 shows an example in which the semiconductor circuit breakers 100a and 100b are connected to the branch lines 4a and 4b, respectively, but the circuit breaker provided on one of the branch lines 4a and 4b is a mechanical circuit breaker. You may. Further, although an example is shown in which two branch lines 4a and 4b are provided, for example, three or four and more than that may be used. Although the branch lines 4a and 4b are each shown by one line, in the case of a three-phase AC circuit, each is constituted by three lines.
- the circuit breaker 200 is provided with the semiconductor circuit breaker 100 on at least one of the branch lines 4a and 4b branched from the bus 3 connected to the power supply 1 so that when an accident is detected, If a command to cut off the current is issued immediately before the current withstand capability of the semiconductor switch section 10 is reached and the command to cut off the current is issued, the current can be cut off at the current zero point to suppress the surge voltage.
- the breaker 200 includes the current limiter 6 connected in parallel to the main switch 2 connected to the bus 3 so that an accident occurs in at least one of the branch lines 4a and 4b.
- the current flowing from the power supply 1 toward the induction motors 5a and 5b, which are loads, is limited, so that the semiconductor circuit breaker 100 can immediately cut off the current.
- the circuit breaker 200 includes the semiconductor circuit breaker 100 so that, when an accident occurs in at least one of the branch lines 4a and 4b, the induction motors 5a and 5b connected to the normal branch lines 4a and 4b. Acts as a generator, and can prevent current from flowing from the normal branch lines 4a and 4b to the branch line 4a where an accident has occurred.
- the semiconductor circuit breaker 100 can suppress the occurrence of a surge voltage due to the inductance component of the load, so that it is not necessary to provide a lightning arrester.
- lightning arresters 7r, 7s, 7t may be provided on the IN side of the semiconductor circuit breaker 100 of each phase of the three-phase AC circuit for the purpose of protecting against surges caused by components, lightning, and the like.
- the circuit breaker 200 does not provide the lightning arresters 7 individually to the semiconductor circuit breakers 100a and 100b provided on the branch lines 4a and 4b, but places the lightning arresters 7 on the bus 3 which is a branch portion. At least one may be provided.
- FIG. 17 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 5 of the present invention.
- the semiconductor switch unit 10 is controlled to be conductive according to a true logic signal H and non-conductive according to a false logic signal L.
- the phase control unit 20 includes an accident detection unit 21, a zero point detection unit 22, and a control signal output unit 23. Further, the phase control unit 20 includes a current detection terminal 201, an external signal terminal 202, an accident signal terminal 203, a control signal terminal 204, and a reset signal terminal 205.
- the current detection terminal 201 is connected to the current detector 30, the external signal terminal 202 is connected to the operation unit 40, the fault signal terminal 203 is connected to the phase control unit 20 of another phase, and the control signal terminal 204 is connected to the semiconductor switch unit. 10 is connected. Two or more of these terminals may be provided as necessary.
- the phase control unit 20 acquires the current signal S1 from the current detector 30 and inputs the current signal S1 to the accident detection unit 21 and the zero point detection unit 22 via the current detection terminal 201.
- the accident detection unit 21 includes an amplifier 211, a rectifier circuit 212, and a comparison unit 213.
- the current signal S1 input to the accident detection unit 21 is converted into a voltage signal having an appropriate amplitude by the amplifier 211 and amplified.
- the voltage signal amplified by the amplifier 211 is rectified by the rectifier circuit 212 and converted into an amplitude signal indicating the magnitude of the amplitude of the alternating current.
- the comparing unit 213 compares the amplitude signal with a predetermined threshold for determining whether or not an accident has occurred.
- the accident detection unit 21 When the comparison unit 213 determines that an accident has occurred, the accident detection unit 21 outputs a false logic signal L to the control signal output unit 23 as the accident detection signal S2. Further, the accident detection unit 21 outputs the false logic signal L to the phase control unit 20 of another phase via the accident signal terminal 203.
- the zero detector 22 includes a switch 221, an amplifier 222, a comparator 223, and a NOT circuit 224.
- the switch 221 may be configured not only by a mechanical switch but also by an electronic switch without a movable portion or a circuit that performs the same operation.
- the switch 221 is normally non-conductive, and the current signal S1 input to the zero point detection unit 22 is cut off by the switch 221.
- the switch 221 is turned on by an external signal input via the external signal terminal 202, and the current signal S 1 is input to the amplifier 222.
- the external signal includes a command signal S5 for commanding to cut off the current output from the operation unit 40 and an accident detection signal S2 for commanding to cut off the current output from the phase control unit 20 of another phase. And so on.
- the amplifier 222 converts the current signal S1 into a voltage signal having an appropriate amplitude.
- the comparing section 223 compares the voltage signal amplified by the amplifier 222 with zero potential, and determines whether the amplified voltage signal is positive or negative.
- the comparison unit 223 outputs a true logic signal H when the voltage signal is positive, and outputs a false logic signal L when the voltage signal is negative.
- the true or false logical signals H and L output from the comparing unit 223 are respectively branched into two, one is output to the control signal output unit 23 as it is, and the other is logically inverted through the NOT circuit 224. It is output to the control signal output unit 23.
- the zero point detection unit 22 can output both the current zero point where the current changes from positive to negative and the current zero point where the current changes from negative to positive as the zero point detection signal S3.
- the control signal output unit 23 includes three latches 231a, 231b, and 231c, and two AND circuits 232a and 232b.
- the latches 231a, 231b, and 231c hold the output at the false logic signal L when the input logic signal changes from true to false, and hold the output at the true logic signal H when the input logic signal changes from false to true. Is done.
- the signal output from the zero point detection unit 22 without passing through the NOT circuit 224 is input to the latch 231b, and the signal output via the NOT circuit 224 is input to the latch 231c.
- the output of the latch 231b is held at the false logic signal L corresponding to the current zero point when the current changes from positive to negative.
- the output of the latch 231c is held at the false logic signal L corresponding to the current zero point when the current changes from negative to positive.
- the AND circuit 232a calculates the logical product of the signal output from the latch 231b and the signal output from the latch 231c.
- the AND circuit 232b calculates the logical product of the signal output from the AND circuit 232a and the signal output from the latch 231a, so that at least one of the latches 231a, 231b, and 231c is a false logical signal.
- L is output, a false logic signal L is output as the off control signal S4b for turning off the semiconductor switch unit 10.
- a reset signal is input to each of the latches 231a, 231b, and 231c via the reset signal terminal 205.
- the false logic signal L that resets the latches 231a, 231b, and 231c and turns off the semiconductor switch unit 10 after the accident is eliminated or before the restart after the normal stop. Is released, and the semiconductor switch unit 10 is made conductive.
- the semiconductor circuit breaker 100 when an accident is detected, the semiconductor circuit breaker 100 according to the present embodiment immediately shuts off the current before reaching the current withstand capability of the semiconductor switch unit 10, and issues a command to shut off the current. In such a case, generation of a surge voltage can be suppressed by interrupting the current at the current zero point.
- the semiconductor circuit breaker 100 includes an accident detection unit 21 having an amplifier 211, a rectifier circuit 212, and a comparison unit 213, a zero point detection unit 22 having an amplifier 222, a comparison unit 223, and a NOT circuit 224;
- This is a simple configuration including two latches 231a, 231b, 231c and a control signal output unit 23 having two AND circuits 232a, 232b.
- the delay time of signal transmission in the latches 231a, 231b, 231c, the NOT circuit 224, and the AND circuits 232a, 232b is about 100 ns.
- the delay time ⁇ td required for the semiconductor switch unit 10 to become non-conductive after the current passes through the current zero point is about 2 ⁇ s to 3 ⁇ s.
- the current zero point is detected and cut off after the delay time has elapsed.
- the current value at this time can be a current value that is smaller by about five orders of magnitude than the peak value of the amplitude.
- FIG. 18 is a schematic configuration diagram of a phase control unit of a semiconductor circuit breaker according to Embodiment 6 of the present invention.
- the zero point detection unit 22 normally closes the switch 221 to turn on when receiving a command to cut off the current signal S1 with the switch 221, and starts detecting the current zero point.
- the zero point detection unit 22 always detects the current zero point.
- the phase control unit 20 acquires the current signal S1 from the current detector 30 and inputs the current signal S1 to the accident detection unit 21 and the zero point detection unit 22 via the current detection terminal 201.
- the accident detection unit 21 receives the current signal S1 and determines whether or not an accident has occurred. When determining that an accident has occurred, the accident detection unit 21 outputs a false logic signal L to the control signal output unit 23 as the accident detection signal S2, or outputs the signal to the phase control unit 20 of another phase from the accident signal terminal 203.
- the true or false logical signals H and L output from the comparing unit 223 are respectively branched into two, one is output to the control signal output unit 23 as it is, and the other is logically inverted through the NOT circuit 224. It is output to the control signal output unit 23.
- the control signal output unit 23 includes a latch 231a, D latches 231d and 231e, and AND circuits 232a and 232b.
- the signal output from the accident detection unit 21 is input to the latch 231a.
- the D latches 231d and 231e include a CLK terminal to which a signal is input from the zero point detection unit 22, a D terminal to which a signal is input via the external signal terminal 202, and a Q terminal to output a signal.
- the D latches 231d and 231e output the signal input to the D terminal from the Q terminal, and then input the signal to the CLK terminal.
- the logic signal output from the Q terminal continues to be held until the logic signal changes from false to true or from true to false.
- the signal output from the zero point detection unit 22 without passing through the NOT circuit 224 is input to the CLK terminal of the D latch 231d, and the signal output via the NOT circuit 224 is input to the CLK terminal of the D latch 231e.
- An external signal output from the external operation unit 40 or another phase control unit 20 via the external signal terminal 202 is input to the D terminal of the D latch 231d.
- the ⁇ ⁇ ⁇ D latch 231d outputs, to the Q terminal, an external signal input to the D terminal at the current zero point where the current value changes from positive to negative based on the signal input to the CLK terminal.
- the D latch 231e outputs an external signal input to the D terminal to the Q terminal at a current zero point where the current changes from negative to positive.
- the external signal is a command signal S5 for commanding to cut off the current output from the external operation unit 40 or the phase control unit 20 of another phase, and outputs a false logic signal L to the Q terminal.
- the AND circuit 232a calculates the logical product of the signal output from the D latch 231d and the signal output from the D latch 231e.
- the AND circuit 232b calculates the logical product of the signal output from the AND circuit 232a and the signal output from the accident detection unit 21, so that at least one of the latch 231a and the D latch 231d or 231e is false.
- a false logic signal L is output as the off control signal S4b for turning off the semiconductor switch unit 10.
- the semiconductor circuit breaker 100 when an accident is detected, the semiconductor circuit breaker 100 according to the present embodiment immediately shuts off the current before reaching the current withstand capability of the semiconductor switch unit 10, and issues a command to shut off the current. In such a case, generation of a surge voltage can be suppressed by interrupting the current at the current zero point.
- the semiconductor circuit breaker 100 includes an accident detection unit 21 having an amplifier 211, a rectifier circuit 212 and a comparison unit 213, a zero point detection unit 22 having an amplifier 222, a comparison unit 223 and a NOT circuit 224, and a latch. 231a, a simple configuration including two D latches 231d and 231e and a control signal output unit 23 having two AND circuits 232a and 232b.
- the delay time of signal transmission in the latch 231a, the D latches 231d and 231e, the NOT circuit 224, and the AND circuits 232a and 232b is about 100 ns.
- the delay time from the passage of the current zero point to the output of the control signal by the control signal output unit 23 is about 2 ⁇ s to 3 ⁇ s, and the current is cut off in a very short time compared to the cycle of the alternating current of the commercial power supply. Can be.
- the semiconductor signal is output at the current zero point according to an external signal for commanding the interruption of the current.
- the switch unit 10 can be made non-conductive.
- the accident detection unit 21 compares positive or negative current values with one threshold to determine whether or not an accident has occurred.
- a configuration different from the above configuration may be adopted.
- the accident detection unit 21 can determine whether or not an accident has occurred using two different thresholds for a positive current value and a negative current value.
- the accident detection unit 21 can determine whether or not an accident has occurred based on whether or not the amount of change in the current value is equal to or greater than the threshold.
- FIG. 21 is a schematic configuration diagram showing another example of the accident detection unit of the semiconductor circuit breaker according to Embodiment 6 of the present invention.
- the accident detection unit 21 includes an amplifier 211, a differentiator 215, two comparators 213a and 213b connected in parallel, and an OR circuit 214.
- the current signal S1 input to the accident detection unit 21 is converted by the amplifier 211 into a voltage signal having an appropriate amplitude.
- the differentiating circuit 215 differentiates the amplified voltage signal and calculates a change amount of the voltage signal.
- the change amount of the voltage signal is branched into two, one of which is compared with a threshold value of a change amount of a positive current value in a comparison unit 213a, and the other is compared with a threshold value of a change amount of a negative current value in a comparison unit 213b. Is done.
- the OR circuit 214 determines that one of the voltage signals is equal to or larger than the threshold value of the change amount of the positive current value and equal to or smaller than the threshold value of the change amount of the negative current value in the comparator 213a, and outputs the false logic signal L. I do.
- the accident detection unit 21 can determine whether an accident has occurred using two different thresholds based on the amount of change in the positive current value and the amount of change in the negative current value.
- the semiconductor circuit breaker connected to the three-phase AC circuit has been described as an example.
- the circuit breaker may be connected to another circuit, for example, a single-phase three-wire circuit. Is also good.
- phase control units 20r, 20s, and 20t are separately provided, but the functions executed by the phase control units 20r, 20s, and 20t are performed by one control unit. It may be performed.
- the present invention may be appropriately combined with a plurality of constituent elements disclosed in the first to sixth embodiments without departing from the gist of the present invention.
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体遮断器を示す概略構成図である。本実施の形態では、一例としてr相、s相及びt相の三相交流回路に接続された半導体遮断器について説明する。図1に示すように、半導体遮断器100は、r相、s相及びt相にそれぞれ接続された半導体スイッチ部10r、10s、10tと、各半導体スイッチ部10r、10s、10tの導通及び非導通を制御する位相制御部20r、20s、20tとを備える。半導体遮断器100は、交流電源と負荷との間に接続され、各相には電流を検出する電流検出器30r、30s、30tが設けられている。
図6は、本発明の実施の形態2に係る半導体遮断器の位相制御部の概略構成図である。実施の形態1では、位相制御部20r、20s、20tが、それぞれ半導体スイッチ部10r、10s、10tを制御していたのに対し、本実施の形態では、位相制御部20r、20s、20tが互いに接続され、事故発生時に事故が発生した相の位相制御部20が、正常な他の相の半導体スイッチ部10を制御する。以下では、実施の形態1と同様である点の説明を省略し、異なる点を中心に説明する。
実施の形態1では、零点検出部22が電流零点を検出したとき制御信号出力部23が半導体スイッチ部10を非導通にする制御信号を出力していたのに対し、本実施の形態では、位相制御部20を構成する回路に起因する遅延時間Δtdを考慮して、検出された電流に基づいて、後の電流零点となるときを推定し、推定された、後の電流零点となるとき半導体スイッチ部10を非導通にする制御信号を出力する。以下では、実施の形態1と同様である点の説明を省略し、異なる点を中心に説明する。
図14は、本発明の実施の形態4に係る遮断装置を適用した電力系統を示す概略構成図である。以下では、実施の形態1と同様である点の説明を省略し、異なる点を中心に説明する。図14に示すように、電力系統では、電源1に接続された母線3に主幹スイッチ2が電源1と直列に接続されており、主幹スイッチ2の電源1側と反対側の母線3には、2つに分岐された分岐線路4a、4bが設けられている。分岐線路4a、4bには負荷として誘導電動機5a、5bが接続されており、電源1から電力が供給されている。
本実施の形態では、半導体遮断器100の位相制御部20の詳細な構成の一例について説明する。図17は、本発明の実施の形態5に係る半導体遮断器の位相制御部の概略構成図ある。
本実施の形態では、半導体遮断器100の位相制御部20の詳細な構成の一例について説明する。図18は、本発明の実施の形態6に係る半導体遮断器の位相制御部の概略構成図ある。実施の形態5では、零点検出部22は、通常、スイッチ221で電流信号S1を遮断し、電流を遮断する指令を受けたとき、スイッチ221を閉じて導通させ、電流零点の検出を開始していたのに対し、本実施の形態では、零点検出部22が、常時、電流零点を検出している。以下では、実施の形態5と同様の構成である箇所は、省略して説明する。
Claims (9)
- 交流回路に接続され、制御信号に基づいて導通及び非導通が制御される半導体スイッチ部と、
前記交流回路から検出された電流に基づいて事故を検出する事故検出部と、
前記交流回路から検出された電流に基づいて電流零点を検出する零点検出部と、
前記事故検出部が事故を検出したとき又は電流を遮断する指令を受けて前記零点検出部が前記電流零点を検出したとき、前記半導体スイッチ部を非導通にする前記制御信号を出力する制御信号出力部と
を備えることを特徴とする半導体遮断器。 - 前記事故検出部は、前記交流回路から検出された電流に基づいて電流値又は電流値の変化量が閾値以上であった場合、事故と判定することを特徴とする請求項1に記載の半導体遮断器。
- 前記交流回路の各相に対応してそれぞれ前記半導体スイッチ部、前記事故検出部、前記零点検出部及び前記制御信号出力部を備え、少なくとも1つの相の前記事故検出部が事故を検出したとき電流を遮断する指令を出力し、事故が検出された相の前記制御信号出力部は、事故が検出された相の前記半導体スイッチ部を非導通にする前記制御信号を出力し、他の相の前記制御信号出力部は、事故が検出された相の前記事故検出部から電流を遮断する指令を受けて前記他の相の前記零点検出部が前記電流零点を検出したとき、前記他の相の前記半導体スイッチ部を非導通にする前記制御信号を出力することを特徴とする請求項1又は2に記載の半導体遮断器。
- 交流回路に接続され、制御信号に基づいて導通及び非導通が制御される半導体スイッチ部と、
前記交流回路から検出された電流に基づいて事故を検出する事故検出部と、
前記交流回路から検出された電流に基づいて電流零点を検出し、検出された前記電流零点より後の電流零点及び前記制御信号の出力にかかる遅延時間を推定する零点検出部と、
前記事故検出部が事故を検出したとき又は電流を遮断する指令を受けて前記遅延時間に基づいて前記後の電流零点となるとき、前記半導体スイッチ部を非導通にする前記制御信号を出力する制御信号出力部と
を備えることを特徴とする半導体遮断器。 - 前記事故検出部は、前記交流回路から検出された電流から電流信号を取得して電圧信号に変換するアンプと、前記電圧信号と事故か否かを判定する閾値とを比較して比較結果を示す信号を出力する比較部とを備えることを特徴とする請求項1から4のいずれか一項に記載の半導体遮断器。
- 前記零点検出部は、前記交流回路から検出された電流から電流信号を取得して電圧信号に変換するアンプと、電圧信号と零電位とを比較して比較結果を示す信号を出力する比較部と、前記比較部から2つに分岐されて出力された前記比較結果を示す信号のうち、一方の信号を論理反転して出力するNOT回路とを備えることを特徴とする請求項1から5のいずれか一項に記載の半導体遮断器。
- 前記制御信号出力部は、前記事故検出部及び前記零点検出部から出力された信号の出力をそれぞれ保持するラッチと、前記ラッチから出力された信号の論理積に応じて前記制御信号を出力するAND回路とを備えることを特徴とする請求項5又は6に記載の半導体遮断器。
- 前記制御信号出力部は、前記事故検出部から出力された信号の出力を保持するラッチと、前記零点検出部から出力された信号に応じて、電流を遮断する指令信号の出力を保持するDラッチと、前記ラッチ及び前記Dラッチから出力された信号の論理積に応じて前記制御信号を出力するAND回路とを備えることを特徴とする請求項5又は6に記載の半導体遮断器。
- 電源に接続された母線から分岐された分岐線路に接続された請求項1から8のいずれか一項に記載の半導体遮断器と、前記母線に接続された主幹スイッチに並列に接続された限流器とを備えることを特徴とする遮断装置。
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PCT/JP2018/027901 WO2020021656A1 (ja) | 2018-07-25 | 2018-07-25 | 半導体遮断器及び遮断装置 |
EP18927476.4A EP3829016A4 (en) | 2018-07-25 | 2018-07-25 | SEMICONDUCTOR CIRCUIT BREAKER AND CIRCUIT BREAKER |
US17/256,663 US11848550B2 (en) | 2018-07-25 | 2018-07-25 | Semiconductor circuit breaker and circuit breaking device |
JP2018555693A JP6497488B1 (ja) | 2018-07-25 | 2018-07-25 | 半導体遮断器及び遮断装置 |
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PCT/JP2018/027901 WO2020021656A1 (ja) | 2018-07-25 | 2018-07-25 | 半導体遮断器及び遮断装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023199377A1 (ja) * | 2022-04-11 | 2023-10-19 | 日本電信電話株式会社 | 遮断器および遮断方法 |
WO2023199378A1 (ja) * | 2022-04-11 | 2023-10-19 | 日本電信電話株式会社 | 遮断器および遮断方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3767316B1 (en) * | 2019-07-19 | 2022-03-30 | Yazaki Corporation | Switch failure detection device |
EP4033505B1 (en) | 2019-09-17 | 2024-04-24 | National University Corporation Saitama University | Current interruption device and current interruption method |
JP6808116B1 (ja) * | 2020-04-16 | 2021-01-06 | 三菱電機株式会社 | 移動体用配電システム |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5032461A (ja) | 1973-07-26 | 1975-03-29 | ||
JPS52151819A (en) * | 1976-06-11 | 1977-12-16 | Mitsubishi Electric Corp | Inverter device connected in parallel |
JPS61293115A (ja) * | 1985-06-18 | 1986-12-23 | ノ−ザン・テレコム・リミテツド | 電話加入者用ラインインタ−フエ−ス回路の保護装置 |
JP2003281978A (ja) * | 2002-03-25 | 2003-10-03 | Fuji Electric Co Ltd | 3相交流開閉装置 |
JP2003289625A (ja) * | 2002-03-28 | 2003-10-10 | Mitsubishi Electric Corp | 電圧変動補償装置 |
JP2013172603A (ja) | 2012-02-22 | 2013-09-02 | Ntt Facilities Inc | 半導体遮断器、及び直流給電システム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4245184A (en) * | 1979-03-23 | 1981-01-13 | Westinghouse Electric Corp. | AC Solid-state circuit breaker |
EP0016646B1 (en) | 1979-03-23 | 1983-09-21 | Westinghouse Electric Corporation | Ac solid-state circuit breaker |
JPH04208023A (ja) * | 1990-11-30 | 1992-07-29 | Toshiba Corp | ディジタル形保護継電装置 |
US5600233A (en) * | 1995-08-22 | 1997-02-04 | Chicago Stage Equipment Co. | Electronic power control circuit |
EP0866557A1 (en) * | 1997-03-18 | 1998-09-23 | Carlo Gavazzi AG | Solid state relay |
US7177125B2 (en) * | 2003-02-12 | 2007-02-13 | Honeywell International Inc. | Arc fault detection for SSPC based electrical power distribution systems |
US6900643B2 (en) * | 2003-08-06 | 2005-05-31 | Ballard Power Systems Corporation | Ride through in electronic power converters |
JP2008072865A (ja) | 2006-09-15 | 2008-03-27 | Mitsubishi Electric Corp | 電力供給回路 |
FR2959357B1 (fr) * | 2010-04-27 | 2017-08-11 | Denso Corp | Dispositif d'alimentation electrique pour vehicule |
EP2701255B1 (en) * | 2012-08-23 | 2016-05-04 | General Electric Technology GmbH | Circuit interruption device |
JP6468758B2 (ja) * | 2014-08-27 | 2019-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102167948B1 (ko) * | 2014-12-31 | 2020-10-20 | 엘에스일렉트릭(주) | 직류차단기 및 이의 차단방법 |
JP6706834B2 (ja) * | 2016-01-21 | 2020-06-10 | 国立大学法人東京工業大学 | 回路遮断装置 |
CN107732875A (zh) * | 2016-08-12 | 2018-02-23 | 通用电气公司 | 固态断路器及电机驱动系统 |
JP6808116B1 (ja) | 2020-04-16 | 2021-01-06 | 三菱電機株式会社 | 移動体用配電システム |
-
2018
- 2018-07-25 WO PCT/JP2018/027901 patent/WO2020021656A1/ja active Application Filing
- 2018-07-25 US US17/256,663 patent/US11848550B2/en active Active
- 2018-07-25 JP JP2018555693A patent/JP6497488B1/ja active Active
- 2018-07-25 EP EP18927476.4A patent/EP3829016A4/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5032461A (ja) | 1973-07-26 | 1975-03-29 | ||
JPS52151819A (en) * | 1976-06-11 | 1977-12-16 | Mitsubishi Electric Corp | Inverter device connected in parallel |
JPS61293115A (ja) * | 1985-06-18 | 1986-12-23 | ノ−ザン・テレコム・リミテツド | 電話加入者用ラインインタ−フエ−ス回路の保護装置 |
JP2003281978A (ja) * | 2002-03-25 | 2003-10-03 | Fuji Electric Co Ltd | 3相交流開閉装置 |
JP2003289625A (ja) * | 2002-03-28 | 2003-10-10 | Mitsubishi Electric Corp | 電圧変動補償装置 |
JP2013172603A (ja) | 2012-02-22 | 2013-09-02 | Ntt Facilities Inc | 半導体遮断器、及び直流給電システム |
Non-Patent Citations (1)
Title |
---|
See also references of EP3829016A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023199377A1 (ja) * | 2022-04-11 | 2023-10-19 | 日本電信電話株式会社 | 遮断器および遮断方法 |
WO2023199378A1 (ja) * | 2022-04-11 | 2023-10-19 | 日本電信電話株式会社 | 遮断器および遮断方法 |
Also Published As
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JP6497488B1 (ja) | 2019-04-10 |
JPWO2020021656A1 (ja) | 2020-08-06 |
US11848550B2 (en) | 2023-12-19 |
EP3829016A4 (en) | 2021-07-21 |
US20210265831A1 (en) | 2021-08-26 |
EP3829016A1 (en) | 2021-06-02 |
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