WO2020019788A1 - 智能功率模块的驱动ic电路、智能功率模块及空调器 - Google Patents

智能功率模块的驱动ic电路、智能功率模块及空调器 Download PDF

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Publication number
WO2020019788A1
WO2020019788A1 PCT/CN2019/084289 CN2019084289W WO2020019788A1 WO 2020019788 A1 WO2020019788 A1 WO 2020019788A1 CN 2019084289 W CN2019084289 W CN 2019084289W WO 2020019788 A1 WO2020019788 A1 WO 2020019788A1
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WIPO (PCT)
Prior art keywords
circuit
bridge
voltage
driving
input terminal
Prior art date
Application number
PCT/CN2019/084289
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English (en)
French (fr)
Inventor
李叶生
冯宇翔
Original Assignee
广东美的制冷设备有限公司
美的集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201821189193.XU external-priority patent/CN208386448U/zh
Priority claimed from CN201821191216.0U external-priority patent/CN208479500U/zh
Priority claimed from CN201810832530.0A external-priority patent/CN110752790A/zh
Priority claimed from CN201810832385.6A external-priority patent/CN110752788A/zh
Application filed by 广东美的制冷设备有限公司, 美的集团股份有限公司 filed Critical 广东美的制冷设备有限公司
Priority to JP2019544911A priority Critical patent/JP6889781B2/ja
Priority to US16/582,464 priority patent/US11121617B2/en
Publication of WO2020019788A1 publication Critical patent/WO2020019788A1/zh
Priority to US17/398,563 priority patent/US11456658B2/en

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/08Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
    • H02H7/085Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against excessive load
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/08Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
    • H02H7/09Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against over-voltage; against reduction of voltage; against phase interruption
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P5/00Arrangements specially adapted for regulating or controlling the speed or torque of two or more electric motors
    • H02P5/46Arrangements specially adapted for regulating or controlling the speed or torque of two or more electric motors for speed regulation of two or more dynamo-electric motors in relation to one another

Definitions

  • the present application relates to the field of intelligent power modules, and in particular, to a driving IC circuit for an intelligent power module, an intelligent power module, and an air conditioner.
  • Intelligent power module is a power-driven product that combines power electronics and integrated circuit technology.
  • the intelligent power module integrates the power switching device and the high-voltage driving circuit, and has built-in fault detection circuits such as overvoltage, overcurrent and overheating.
  • the intelligent power module receives the control signals of the MCU to drive the subsequent circuits to work, and on the other hand sends the status detection signals of the system back to the MCU.
  • intelligent power modules have won more and more markets with their advantages such as high integration and high reliability. They are especially suitable for inverters and various inverter power sources that drive motors.
  • An ideal power electronic device for mechanical, electric traction, servo drive and variable frequency appliances.
  • IPM is widely used in air conditioners.
  • Current inverter air conditioners include fans, compressors, and PFC modules.
  • Existing inverter air conditioners usually have three separate IPMs to drive their fans, compressors, and PFC modules.
  • the highly integrated IPM of the existing inverter air conditioners simply integrates the drive circuit of the fan and the drive circuit of the compressor, and its internal structure is similar to that of the drive circuit of the fan and the drive circuit of the compressor.
  • the superposition does not achieve high integration and miniaturization in the true sense. Therefore, how to further optimize the highly integrated IPM of the air conditioner is an urgent problem.
  • the existing power switching devices in smart power modules are Si-based power switching devices. People have already studied the Si-based power switching devices very well. The performance of Si-based power switching devices is approaching the limit of material properties. It is difficult to greatly improve the overall performance of intelligent power modules through structural innovation and manufacturing process improvement of Si-based power switching devices.
  • the third generation of semiconductors represented by SiC-based power switching devices ie, wide bandgap semiconductor power devices
  • the SiC-based MOSFET has a high blocking voltage, and there is no tailing current similar to the Si-based IGBT, which makes the dynamic loss of the SiC-based MOSFET very low; and the diode of the SiC material also has very low switching loss; meanwhile, the SiC material It also has three times the thermal conductivity of Si material, making IPM modules based on SiC materials have better operating temperature and good reliability.
  • SiC-based power switching devices (such as SiC-based MOSFETs) are considered to be perfect substitutes for Si-based IGBTs.
  • Si-based power switching devices such as Si-based MOSFET tubes and Si-based IGBT tubes
  • Si-based MOSFET tubes and Si-based IGBT tubes are suitable for working at a driving voltage of 12-15V. Therefore, the driving of intelligent power modules in inverter household appliances (such as inverter air conditioners)
  • the voltage VDD is usually set to 15V, that is, the gate drive signal (high level) of the Si-based power switching device in the smart power module is 15V.
  • SiC-based power switching devices such as SiC-based MOSFETs
  • SiC-based MOSFETs are more suitable for working at a driving voltage of 18 ⁇ 20V, which leads to the driving ICs of Si-based power switching devices in existing intelligent power modules (also known as the driving of intelligent power modules).
  • smart power modules may have both SiC-based power switching devices and Si-based power switching devices.
  • PFC switching tubes in smart power modules generally use SiC-based power switching devices to replace the original Si-based power switches.
  • Devices to improve the power correction factor, thereby improving the power utilization rate, and the inverter devices in the smart power module still use Si-based power switching devices. If the two use the same
  • the driving voltage of the Si-based power switching device may cause the performance of the SiC-based power switching device not to be effectively exerted.
  • the main purpose of the present application is to provide a driving IC circuit of an intelligent power module, which aims to solve the problem that the driving IC of an existing intelligent power module cannot directly drive a SiC-based power switching device.
  • the driving IC circuit includes an operating voltage input terminal, an inverter logic buffer circuit, an upper bridge drive circuit, a lower bridge drive circuit, a PFC logic buffer circuit, PFC drive circuit, first voltage regulation control input terminal, second voltage regulation control input terminal, first voltage regulation module and second voltage regulation module; wherein:
  • the first voltage control input terminal is used to input a first voltage control signal
  • the first voltage regulating module is configured to perform step-up or step-down processing on the voltage input from the working voltage input terminal according to the first voltage regulating control signal, and to drive the inverter logic buffer circuit and the upper bridge.
  • the circuit and the lower bridge driving circuit provide a driving input voltage; or directly output the voltage input from the working voltage input terminal to the driving voltage input terminals of the inverter logic buffer circuit, the upper driving circuit and the lower driving circuit;
  • the second voltage control input terminal is used to input a second voltage control signal
  • the second voltage regulating module is configured to perform step-up or step-down processing on the voltage input from the working voltage input terminal according to the second voltage regulating control signal, and drive the PFC logic buffer circuit and the PFC.
  • the circuit provides a driving input voltage; or directly outputs the voltage input from the working voltage input terminal to the PFC logic buffer circuit and the driving voltage input terminal of the PFC driving circuit.
  • an input terminal of the first voltage regulating module is connected to the working voltage input terminal, a control terminal of the first voltage regulating module is connected to the first voltage regulating control input terminal, and the first voltage regulating module
  • the output terminals of the voltage regulating module are respectively connected to the driving voltage input terminals of the inverter logic buffer circuit, the upper bridge driving circuit and the lower bridge driving circuit; the input terminal of the second voltage regulating module is connected to the working voltage input terminal, A control terminal of the second voltage regulating module is connected to the second voltage regulating control input, and an output terminal of the second voltage regulating module is respectively connected with a driving voltage input of the PFC logic buffer circuit and the PFC driving circuit.
  • the output terminal of the inverter logic buffer circuit is respectively connected to the input terminal of the upper bridge drive circuit and the input terminal of the lower bridge drive circuit, and the output terminal of the PFC logic buffer circuit is driven by the PFC The input of the circuit is connected.
  • the first voltage regulating module includes a first voltage boosting module, a first voltage reducing module, and a first analog switch, and the input terminals of the first voltage increasing module and the first voltage reducing module are in communication with the first voltage reducing module.
  • the operating voltage input is connected, the output of the first boost module is connected to the first input of the first analog switch, and the output of the first buck module is connected to the second of the first analog switch.
  • the input terminal is connected, the third input terminal of the first analog switch is directly connected to the working voltage input terminal, and the common terminal of the first analog switch is respectively connected to the inverter logic buffer circuit, the upper bridge driving circuit and the lower A driving voltage input terminal of the bridge driving circuit is connected, and a control terminal of the first analog switch is connected to the first voltage control input terminal.
  • the second voltage regulating module includes a second voltage increasing module, a second voltage reducing module, and a second analog switch, and the input ends of the second voltage increasing module and the second voltage reducing module are connected to the second voltage increasing module.
  • the working voltage input terminal is connected, the output terminal of the second step-up module is connected to the first input terminal of the second analog switch, and the output terminal of the second step-down module is connected to the second analog switch.
  • the input terminal is connected, the third input terminal of the second analog switch is directly connected to the working voltage input terminal, and the common terminal of the second analog switch is respectively driven by the PFC logic buffer circuit and the PFC driving circuit.
  • a voltage input terminal is connected, and a control terminal of the second analog switch is connected to the second voltage control input terminal.
  • the present application also provides a driving IC circuit for an intelligent power module.
  • the driving IC circuit includes an operating voltage input terminal, an inverter logic buffer circuit, an upper bridge drive circuit, a lower bridge drive circuit, and a PFC logic. Buffer circuit, PFC drive circuit, voltage control input terminal and voltage regulator module; among them:
  • the voltage regulating control input terminal is used for inputting a voltage regulating control signal
  • the voltage regulating module is configured to perform a voltage regulating process on the voltage input from the working voltage input terminal according to a voltage regulating control signal input from the voltage regulating control input terminal, to provide the inverter logic buffer circuit and the upper bridge.
  • the driving circuit, the lower-bridge driving circuit, the PFC logic buffer circuit, and the PFC driving circuit provide a driving input voltage; or the voltage input from the working voltage input terminal is directly output to the inverter logic buffer circuit, the upper-bridge driving circuit, and the lower-bridge Driving voltage input terminal of driving circuit, PFC logic buffer circuit and PFC driving circuit.
  • an input terminal of the voltage regulating module is connected to the working voltage input terminal, a control terminal of the voltage regulating module is connected to the voltage regulating control input terminal, and an output terminal of the voltage regulating module is respectively connected to the
  • the drive logic input terminals of the inverter logic buffer circuit, the upper bridge drive circuit, the lower bridge drive circuit, the PFC logic buffer circuit, and the PFC drive circuit are connected; the output ends of the inverter logic buffer circuit are respectively connected to the upper bridge drive circuit.
  • An input terminal of is connected to an input terminal of the lower-bridge driving circuit, and an output terminal of the PFC logic buffer circuit is also connected to an input terminal of the PFC driving circuit.
  • the voltage regulating module includes a step-down module and an analog switch, an input terminal of the step-down module is connected to the working voltage input terminal, and an output terminal of the step-down module is connected to the first of the analog switch.
  • the input terminal is connected, the second input terminal of the analog switch is directly connected to the operating voltage input terminal, and the common terminal of the analog switch is respectively connected to the inverter logic buffer circuit, the upper bridge drive circuit, the lower bridge drive circuit, A driving voltage input terminal of a PFC logic buffer circuit and a PFC driving circuit is connected, and a control terminal of the analog switch is connected to the voltage control input terminal.
  • the voltage regulating module includes a boost module and an analog switch, an input terminal of the boost module is connected to the working voltage input terminal, and an output terminal of the boost module is connected to the first of the analog switch.
  • the input terminal is connected, the second input terminal of the analog switch is directly connected to the operating voltage input terminal, and the common terminal of the analog switch is respectively connected to the inverter logic buffer circuit, the upper bridge drive circuit, the lower bridge drive circuit, A driving voltage input terminal of a PFC logic buffer circuit and a PFC driving circuit is connected, and a control terminal of the analog switch is connected to the voltage control input terminal.
  • the present application also provides an intelligent power module.
  • the intelligent power module includes a low-voltage area power supply input terminal, a first voltage regulator terminal, a second voltage regulator terminal, an upper bridge control input terminal, and a lower voltage regulator.
  • the low-voltage area power supply input terminal is connected to the operating voltage input terminal of the driving IC circuit, the first voltage regulating terminal is connected to the first voltage regulating control input terminal of the driving IC circuit, and the second voltage regulating Terminal is connected to the second voltage control input terminal of the drive IC circuit, the upper arm control input terminal is connected to the upper bridge control input terminal of the drive IC circuit, and the lower arm control input terminal is connected to the The lower bridge control input terminal of the driving IC circuit is connected, and the PFC control input terminal is connected to the PFC control input terminal of the driving IC circuit; the first output terminal of the upper bridge driving circuit in the driving IC circuit is connected via a The resistor is connected to the control end of the first upper-arm switch tube, and the second output end of the upper-bridge drive circuit is connected to the control end of the second upper-arm switch tube via a resistor.
  • the third output terminal of the bridge driving circuit is connected to the control terminal of the third upper bridge switching transistor via a resistor; the first output terminal of the lower bridge driving circuit in the driving IC circuit is connected to the control terminal via a resistor.
  • the control end of the first lower bridge switch is connected
  • a second output terminal of the lower-bridge driving circuit is connected to a control terminal of the second lower-bridge arm switching tube via the resistor, and a third output terminal of the lower-bridge driving circuit is connected to the control terminal via a resistor
  • the control terminal of the third lower-arm switching tube is connected; the output terminal of the PFC driving circuit in the driving IC circuit is connected to the control terminal of the PFC switching tube via a resistor;
  • the PFC switching tube is a Si-based IGBT tube or a SiC-based MOSFET tube.
  • the present application also provides an intelligent power module.
  • the intelligent power module includes a low-voltage area power supply input terminal, a voltage regulation terminal, an upper bridge arm control input terminal, a lower bridge arm control input terminal, and a PFC control. Input, multiple resistors, first upper arm switch tube, second upper arm switch tube, third upper arm switch tube, first lower arm switch tube, second lower arm switch tube, third lower Bridge arm switch tube, PFC switch tube, and driving IC circuit of the intelligent power module as described above; among them:
  • the power supply input terminal of the low-voltage area is connected to the working voltage input terminal of the driving IC circuit, the voltage regulating terminal is connected to the voltage regulating control input terminal of the driving IC circuit, and the upper arm control input terminal is connected to all
  • the upper bridge control input of the drive IC circuit is connected, the lower arm control input is connected to the lower bridge control input of the drive IC circuit, and the PFC control input is connected to the PFC input of the drive IC circuit Connection;
  • the first output terminal of the upper bridge driving circuit in the driving IC circuit is connected to the control terminal of the first upper bridge switch tube via a resistor, and the second output terminal of the upper bridge driving circuit is connected via A resistor is connected to the control terminal of the second upper arm switch tube, and a third output terminal of the upper bridge drive circuit is connected to the control terminal of the third upper arm switch tube via the resistor;
  • a first output terminal of the lower-bridge driving circuit in the driving IC circuit is connected to a control terminal of the first lower-bridge arm switching tube via a resist
  • the PFC switch tube is a Si-based IGBT tube, or the first upper bridge switch tube, the second upper bridge switch tube, the third upper bridge switch tube, the first lower bridge switch tube, and the second lower bridge
  • the arm switch tube, the third lower-bridge arm switch tube, and the PFC switch tube are SiC-based MOSFET tubes.
  • the present application further provides an air conditioner, where the air conditioner includes the intelligent power module as described above.
  • the driving IC circuit of the intelligent power module of the present application has the first voltage regulating control input terminal, the second voltage regulating control input terminal, and the first voltage regulating added to the driving IC circuit of the intelligent power module in the prior art.
  • Module and the second voltage regulating module therefore, the driving IC circuit of the intelligent power module of the present application can be based on the types of the upper bridge switch tube, the lower bridge switch tube and the PFC switch tube in the smart power module (for SiC-based power switches).
  • the purpose of providing suitable driving voltage for the SiC-based power switching device and the Si-based power switching device in the intelligent power module can be achieved, thereby solving the problem that the driving IC of the existing intelligent power module cannot directly drive the SiC-based power switching device. .
  • FIG. 1 is a schematic structural diagram of a first embodiment of a driving IC circuit of an intelligent power module of the present application
  • FIG. 2 is a schematic structural diagram of a first voltage regulating module described in the first embodiment of a driving IC circuit of an intelligent power module of the present application;
  • FIG. 3 is a schematic structural diagram of a second voltage regulating module described in the first embodiment of the driving IC circuit of the intelligent power module of the present application;
  • FIG. 4 is a schematic circuit structure diagram of a second embodiment of a driving IC circuit of an intelligent power module of the present application
  • FIG. 5 is a schematic structural diagram of an embodiment of a voltage regulating module described in a second embodiment of a driving IC circuit of an intelligent power module of the present application;
  • FIG. 6 is a schematic structural diagram of another embodiment of a voltage regulating module described in the second embodiment of the driving IC circuit of the intelligent power module of the present application;
  • FIG. 7 is a schematic structural diagram of a first embodiment of an intelligent power module of the present application.
  • FIG. 8 is a schematic structural diagram of a second embodiment of an intelligent power module of the present application.
  • FIG. 9 is a schematic structural diagram of a third embodiment of a driving IC circuit of an intelligent power module of the present application.
  • FIG. 10 is a schematic structural diagram of a third embodiment of an intelligent power module of the present application.
  • the present application provides a driving IC circuit 100 for an intelligent power module, which is used to solve the problem that a driving IC of an existing intelligent power module cannot directly drive a SiC-based power switching device.
  • FIG. 1 is a schematic structural diagram of a first embodiment of a driving IC circuit of an intelligent power module of the present application.
  • the driving IC circuit 100 of the intelligent power module includes an operating voltage input terminal VDD0 and an inverter logic buffer circuit. 101, high-side drive circuit 102, low-side drive circuit 103, PFC logic buffer circuit 104, PFC drive circuit 105, first voltage control input RS1, second voltage control input RS2, first voltage regulator module 106, and ⁇ ⁇ ⁇ ⁇ 107 ⁇ The second voltage regulator module 107.
  • the first voltage control input RS1 is used to input a first voltage control signal
  • the first voltage regulating module 106 is configured to boost or step down the voltage input from the operating voltage input terminal VDD0 according to the first voltage regulating control signal input from the first voltage regulating control input RS1. Processing, providing a driving input voltage to the inverter logic buffer circuit 101, the upper bridge driving circuit 102, and the lower bridge driving circuit 103; or directly outputting the voltage input from the operating voltage input terminal VDD0 to the inverter logic buffer circuit 101.
  • the driving voltage input terminals of the upper bridge driving circuit 102 and the lower bridge driving circuit 103 are equal to The voltage input from the working voltage input terminal VDD0;
  • the second voltage control input RS2 is used to input a second voltage control signal
  • the second voltage regulating module 107 is configured to boost or step down the voltage input from the working voltage input terminal VDD0 according to the second voltage regulating control signal input from the second voltage regulating control input terminal RS2. Processing, providing a driving input voltage for the PFC logic buffer circuit 104 and the PFC driving circuit 105; or directly outputting the voltage input from the operating voltage input terminal VDD0 to the PFC logic buffer circuit 104 and the PFC driving circuit The driving voltage input terminal of 105. At this time, the driving voltage of the PFC logic buffer circuit 104 and the driving voltage input terminal of the PFC driving circuit 105 is equal to the voltage input by the operating voltage input terminal VDD0.
  • an input terminal of the first voltage regulating module 106 is connected to the working voltage input terminal VDD0, and a control terminal of the first voltage regulating module 106 is connected to the first voltage regulating control input RS1,
  • the output terminals of the first voltage regulating module 106 are respectively connected to the driving voltage input terminals of the inverter logic buffer circuit 101, the upper bridge driving circuit 102 and the lower bridge driving circuit 103;
  • the inputs of the second voltage regulating module 107 Terminal is connected to the working voltage input terminal VDD0, the control terminal of the second voltage regulating module 107 is connected to the second voltage regulating control input RS2, and the output terminals of the second voltage regulating module 107 are respectively connected to the
  • the PFC logic buffer circuit 104 and the driving voltage input terminal of the PFC driving circuit 105 are connected; in this embodiment, the output terminal of the inverter logic buffer circuit 101 is respectively connected to the input terminal of the upper-bridge driving circuit 102 and the An input terminal of the lower-bridge driving circuit 103 is connected, and an output terminal of
  • IN1, IN2, and IN3 in the figure are the upper bridge control inputs of the drive IC circuit 100 of the intelligent power module of this embodiment, and IN4, IN5, and IN6 are the lower bridge control inputs of the drive IC circuit 100 of the intelligent power module of this embodiment.
  • IN7 in the figure is the PFC input terminal of the driving IC circuit 100 of the intelligent power module of this embodiment, where IN1, IN2, IN3, IN4, IN5, and IN6 are connected to the inverter logic buffer circuit 101, and IN7 is connected to the inverter logic buffer circuit 101. PFC logic buffer circuit connection.
  • HO1 is the first output terminal of the upper-bridge driving circuit 102
  • HO2 is the second output terminal of the upper-bridge driving circuit 102
  • HO3 is the third output terminal of the upper-bridge driving circuit 102.
  • LO1 in the figure Is the first output terminal of the lower-bridge driving circuit 103
  • LO2 is the second output terminal of the lower-bridge driving circuit 103
  • LO3 is the third output terminal of the lower-bridge driving circuit 103
  • PFCO in the figure is the An output terminal of the PFC driving circuit 105, wherein a first output terminal HO1 of the upper-bridge driving circuit 102, a second output terminal HO2 of the upper-bridge driving circuit 102, and a third output terminal of the upper-bridge driving circuit 102 HO3 is respectively connected to a control end of a corresponding upper-arm switch tube (not shown) in the intelligent power module, a first output end LO1 of the lower-bridge driving circuit 103, and a second The output terminal LO2 and the third
  • FIG. 2 is a schematic structural diagram of the first voltage regulating module in the first embodiment of the driving IC circuit of the intelligent power module of the present application.
  • the first voltage regulating module 106 It includes a first step-up module 1061, a first step-down module 1062, and a first analog switch 1063.
  • the input terminals of the first boost module 1061 and the first buck module 1062 are connected to the operating voltage input terminal VDD0, and the output terminal of the first boost module 1061 is connected to the first analog switch.
  • the first input terminal of 1063 (corresponding to the terminal labeled 1 in the first analog switch 1063) is connected, and the output terminal of the first step-down module 1062 and the second input terminal (corresponding to the first analog switch 1063)
  • the first analog switch 1063 is connected to the terminal labeled 2 and the third input terminal of the first analog switch 1063 (corresponding to the terminal labeled 0 to the first analog switch 1063) is directly connected to the working voltage.
  • the input terminal VDD0 is connected, and the common terminal of the first analog switch 1063 is connected to the driving voltage input terminals of the inverter logic buffer circuit 101, the upper-bridge driving circuit 102, and the lower-bridge driving circuit 103, respectively.
  • the first analog switch The voltage of the common terminal of 1063 is VDD1.
  • the control terminal of the first analog switch 1063 is connected to the first voltage control input terminal RS1.
  • FIG. 3 is a schematic structural diagram of a second voltage regulating module in the first embodiment of the driving IC circuit of the intelligent power module of the present application.
  • the second voltage regulating module 107 It includes a second boost module 1071, a second step-down module 1072, and a second analog switch 1073. Input terminals of the second step-up module 1071 and the second step-down module 1072 are connected to the working voltage input terminal VDD0.
  • An output terminal of the second step-up module 1071 is connected to a first input terminal of the second analog switch 1073 (corresponding to a terminal labeled 1 in the second analog switch 1073), and the second step-down module
  • the output terminal of 1072 is connected to the second input terminal of the second analog switch 1073 (corresponding to the terminal labeled 2 in the second analog switch 1073), and the third input terminal of the second analog switch 1073 (corresponding to the The terminal labeled 0 in the second analog switch 1073 is directly connected to the working voltage input terminal VDD0, and the common terminals of the second analog switch 1073 are respectively connected to the PFC logic buffer circuit 104 and the PFC driving circuit 105.
  • the driving voltage input terminal is connected, the second Voltage analog switch 1073 to the common terminal VDD1 is, in the present embodiment, the control terminal of the second analog switch 1073 and the control input of the second voltage regulator connected to RS2.
  • the voltage of the working voltage input terminal is 15V or 20V.
  • the driving IC circuit 100 of the intelligent power module of this embodiment is provided with the first voltage regulating module 106 and the second voltage regulating module 107, the user can change the type of the power switching device (the Si-based power switch) in the intelligent power module.
  • Device or SiC-based power switching device input different voltage regulation control signals to the first voltage regulating control input terminal RS1 and the second voltage regulating control input terminal RS2, so that the first voltage regulating module 106 And the second voltage regulating module 107 adjusts (boosts or steps down) the voltage input from the working voltage input terminal VDD0, so as to obtain driving voltage signals suitable for different types of power switching devices.
  • the first voltage regulating module 106 adjusts the voltage input from the working voltage input terminal VDD0 to a driving voltage VDD1, and outputs the driving voltage VDD1 to the inverter logic buffer circuit 101, the The driving voltage input terminals of the upper-bridge driving circuit 102 and the lower-bridge driving circuit 103 are described.
  • the second voltage regulating module 107 adjusts the voltage input from the operating voltage input terminal VDD0 to a driving voltage VDD2.
  • the driving voltage VDD2 is output to the driving voltage input terminals of the PFC logic buffer circuit 104 and the PFC driving circuit 105.
  • the first voltage regulating module 106 and the second voltage regulating module 107 may implement a voltage boosting function or a voltage reducing function.
  • the upper and lower arm switching tubes in the intelligent power module are Si-based power switching devices (such as Si Base IGBT tube)
  • the PFC switching tube in the smart power module is a SiC-based power switching device (such as a SiC-based MOSFET tube)
  • this embodiment can control the first
  • the voltage regulating control signal causes the first analog switch 1063 in the first voltage regulating module 106 to be connected to the terminal labeled 0, even if the first voltage regulating module 106 directly outputs a 15V driving voltage to the inverter
  • the driving voltage input terminals of the logic buffer circuit 101, the upper-bridge driving circuit 102, and the lower-bridge driving circuit 103 are further upper-arm switching tubes (Si-based power) connected to the output terminals of the upper-bridge driving circuit 102.
  • the second regulator can also be controlled by Voltage control input RS2 Two voltage regulating control signals, so that the second analog switch 1073 in the second voltage regulating module 107 is set to the terminal labeled 1 so that the second voltage boosting module 1071 in the second voltage regulating module 107
  • the input 15V voltage is subjected to step-up processing to step up the 15V voltage to a 20V voltage suitable for driving the PFC switch tube (SiC-based power switching device) to work;
  • the first analog switch 1063 in the first voltage regulating module 106 can be set to the terminal labeled 0 by controlling the first voltage regulating control signal of the first voltage regulating control input terminal RS1.
  • the second voltage control signal of the second voltage control input RS2 is controlled, so that the second analog switch 1073 in the second voltage control module 107 is also set to the terminal labeled 0, even if Each of the first voltage regulating module 106 and the second voltage regulating module 107 outputs a driving voltage of 15V to drive the upper bridge switch, the lower bridge switch and the PFC switch to work;
  • the first analog switch 1063 in the first voltage regulation module 106 is set to the terminal labeled 1.
  • the second voltage control signal of the second voltage control input RS2 is controlled, so that the second analog switch 1073 in the second voltage regulator module 107 is also set to the terminal labeled 1 even if
  • the first voltage regulating module 106 and the second voltage regulating module 107 both boost the 15V voltage input from the working voltage input terminal VDD0 to output a driving voltage of 20V suitable for driving a SiC-based power switching device. ;
  • the first voltage regulating control signal of the first voltage regulating control input RS1 can be controlled by controlling , So that the first analog switch 1063 in the first voltage regulating module 106 is set to the terminal labeled 2 even if the first voltage reducing module 1062 in the first voltage regulating module 106 pairs the input 20V The voltage is stepped down, and the 20V voltage is stepped down to a 15V voltage suitable for driving the upper bridge switch (Si-based power switch device) and the lower bridge switch (Si-based power switch device) to work;
  • the second analog switch 1073 in the second voltage regulating module 107 can also be set to 0 by
  • the voltage of the working voltage input terminal VDD0 is 20V
  • the upper-side switch, the lower-side switch and the PFC switch in the intelligent power module are Si-based power switches.
  • the first voltage control signal of the first voltage control input RS1 the first analog switch 1063 in the first voltage regulation module 106 is set to the terminal labeled 2
  • the second voltage control signal of the second voltage control input terminal RS2 is controlled, so that the second analog switch 1073 in the second voltage control module 107 is also set to the terminal labeled 2 even if
  • the first voltage regulating module 106 and the second voltage regulating module 107 both step down the 20V voltage input from the working voltage input terminal VDD0 to output a driving voltage of 15V suitable for driving Si-based power switching devices. ;
  • the first analog switch 1063 in the first voltage regulating module 106 can be set to the terminal labeled 0 by controlling the first voltage regulating control signal of the first voltage regulating control input terminal RS1.
  • the second voltage control signal of the second voltage control input RS2 is controlled, so that the second analog switch 1073 in the second voltage control module 107 is also set to the terminal labeled 0, even if The first voltage regulating module 106 and the second voltage regulating module 107 output a driving voltage of 20V suitable for driving a SiC-based power switching device.
  • the driving IC circuit 100 of the intelligent power module in this embodiment is provided with the first voltage regulating module 106 and the second voltage regulating module 107, and because the first voltage regulating module 106 and the The second voltage regulating module 107 can both implement a voltage boosting function and a voltage reducing function, and can adjust the voltage regulating control signal of the first voltage regulating control input RS1 and the second voltage regulating control input RS2.
  • the driving IC circuit 100 of the intelligent power module of this embodiment can be adapted to drive the traditional Si-based power switching devices, such as Si-based IGBT devices, can also be used to drive SiC-based power switching devices, such as wide-bandgap power switching devices such as SiC-based MOSFETs.
  • Si-based power switching devices such as Si-based IGBT devices
  • SiC-based power switching devices such as wide-bandgap power switching devices such as SiC-based MOSFETs.
  • FIG. 4 is a schematic circuit structure diagram of a second embodiment of a driving IC circuit of an intelligent power module of the present application.
  • the driving IC circuit 200 of the intelligent power module includes an operating voltage input terminal VDD0 and an inverter logic buffer.
  • the voltage control input RS is used to input a voltage control signal
  • the voltage regulation module 108 is configured to perform a voltage regulation process on the voltage input from the working voltage input terminal VDD0 according to a voltage regulation control signal input from the voltage regulation control input terminal RS to provide the inverter logic buffer circuit.
  • the upper bridge driving circuit 102, the lower bridge driving circuit 103, the PFC logic buffer circuit 104, and the PFC driving circuit 105 provide a driving input voltage; or the voltage input from the working voltage input terminal VDD0 is directly output to the inverter logic buffer.
  • the driving voltage input terminals of the circuit 101, the upper bridge driving circuit 102, the lower bridge driving circuit 103, the PFC logic buffer circuit 104, and the PFC driving circuit 105 are configured to perform a voltage regulation process on the voltage input from the working voltage input terminal VDD0 according to a voltage regulation control signal input from the voltage regulation control input terminal RS to provide the inverter logic buffer circuit.
  • the upper bridge driving circuit 102, the lower bridge driving circuit 103, the PFC logic buffer circuit 104, and the PFC driving circuit 105 provide
  • an input terminal RS of the voltage regulating module is connected to the working voltage input terminal VDD0
  • a control terminal of the voltage regulating module 108 is connected to the voltage regulating control input RS
  • the voltage regulating module 108 The output terminals are respectively connected to the driving voltage input terminals of the inverter logic buffer circuit 101, the upper bridge drive circuit 102, the lower bridge drive circuit 103, the PFC logic buffer circuit 104, and the PFC drive circuit 105;
  • the An output terminal of the inverter logic buffer circuit 101 is respectively connected to an input terminal of the upper bridge driving circuit 102 and an input terminal of the lower bridge driving circuit 103, and an output terminal of the PFC logic buffer circuit 104 is also driven to the PFC.
  • the input of the circuit 105 is connected.
  • IN1, IN2, and IN3 in the figure are the upper bridge control inputs of the drive IC circuit 200 of the intelligent power module of this embodiment, and IN4, IN5, and IN6 are the lower bridge control inputs of the drive IC circuit 200 of the intelligent power module of this embodiment.
  • IN7 in the figure is the PFC input terminal of the driving IC circuit 200 of the intelligent power module of this embodiment, where IN1, IN2, IN3, IN4, IN5, and IN6 are connected to the inverter logic buffer circuit 101, and IN7 is connected to the inverter logic buffer circuit 101. PFC logic buffer circuit connection.
  • HO1 is the first output terminal of the upper-bridge driving circuit 102
  • HO2 is the second output terminal of the upper-bridge driving circuit 102
  • HO3 is the third output terminal of the upper-bridge driving circuit 102.
  • LO1 in the figure Is the first output terminal of the lower-bridge driving circuit 103
  • LO2 is the second output terminal of the lower-bridge driving circuit 103
  • LO3 is the third output terminal of the lower-bridge driving circuit 103
  • PFCO in the figure is the An output terminal of the PFC driving circuit 105, wherein a first output terminal HO1 of the upper-bridge driving circuit 102, a second output terminal HO2 of the upper-bridge driving circuit 102, and a third output terminal of the upper-bridge driving circuit 102 HO3 is respectively connected to a control end of a corresponding upper-arm switch tube (not shown) in the intelligent power module, a first output end LO1 of the lower-bridge driving circuit 103, and a second The output terminal LO2 and the third
  • FIG. 5 is a schematic structural diagram of an embodiment of the voltage regulation module described in the second embodiment of the driving IC circuit of the intelligent power module of the present application.
  • the voltage regulation module 108 includes Step-down module 1081 and analog switch 1082, the input terminal of the step-down module 1081 is connected to the operating voltage input terminal VDD0, and the output terminal of the step-down module 108 is connected to the first input terminal of the analog switch 1082 (corresponding to The analog switch 1082 has a terminal labeled 1 and the second input terminal of the analog switch 1082 (corresponding to the terminal labeled 0 in the analog switch 1082) is directly connected to the working voltage input terminal VDD0.
  • the common terminal of the analog switch 1082 is connected to the driving voltage input terminals of the inverter logic buffer circuit 101, the upper bridge drive circuit 102, the lower bridge drive circuit 103, the PFC logic buffer circuit 104, and the PFC drive circuit 105, respectively.
  • the voltage of the common terminal of the switch 1082 is VDD
  • the control terminal of the analog switch 1082 is connected to the voltage control input terminal RS. In this embodiment, the voltage of the working voltage input terminal is 20V.
  • the analog switch 1082 in the voltage regulating module 108 can be set to the terminal labeled 1 by controlling the voltage regulating control signal of the voltage regulating control input terminal RS, and the voltage regulating module 108
  • the 20V voltage input from the working voltage input terminal VDD0 is subjected to step-down processing to output a driving voltage of 15V suitable for driving Si-based power switching devices.
  • the upper-arm switching tube in the smart power module The lower arm switch tube and the PFC switch tube are SiC-based power switching devices.
  • the analog switch in the voltage regulating module 108 can be controlled by controlling the voltage regulating control signal of the voltage regulating control input RS. 1082 hits the end labeled 0, so that the voltage regulating module 108 directly outputs a driving voltage of 20V suitable for driving a SiC-based power switching device.
  • FIG. 6 is a schematic structural diagram of another embodiment of the voltage regulating module described in the second embodiment of the driving IC circuit of the intelligent power module of the present application.
  • the voltage regulating module 108 It includes a boost module 1081 'and an analog switch 1082'.
  • An input terminal of the boost module 1081 ' is connected to the working voltage input terminal VDD0, and an output terminal of the boost module 1081' is connected to the analog switch 1082 '.
  • the first input terminal (corresponding to the terminal labeled 1 in the analog switch 1082 ') is connected, and the second input terminal (corresponding to the terminal labeled 0 in the analog switch 1082') is directly connected to all
  • the working voltage input terminal VDD0 is connected, and the common terminal of the analog switch 1082 'is respectively connected to the inverter logic buffer circuit 101, the upper bridge drive circuit 102, the lower bridge drive circuit 103, the PFC logic buffer circuit 104, and the PFC drive circuit 105.
  • the driving voltage input terminal is connected, and the control terminal of the analog switch 1082 'is connected to the voltage control input terminal RS.
  • the analog switch 1082 ′ in the voltage regulating module 108 can be set to a terminal labeled 0 by controlling the voltage regulating control signal of the voltage regulating control input RS, so that the voltage regulating module 108 directly Outputs a 15V driving voltage suitable for driving Si-based power switching devices; in this embodiment, if the upper arm switching tube, the lower arm switching tube and the PFC switching tube in the intelligent power module are SiC-based power switching devices. Then, in this embodiment, by controlling the voltage regulating control signal of the voltage regulating control input terminal RS, the analog switch 1082 in the voltage regulating module 108 is set to the terminal labeled 1 to enable the voltage regulating module. 108 Step up the 15V voltage input from the working voltage input terminal VDD0 to output a driving voltage of 20V suitable for driving
  • the driving IC circuit 200 of the intelligent power module in this embodiment is provided with the voltage regulating module 108, and the voltage regulating module 108 in this embodiment can implement a voltage reduction function (corresponding to FIG. 5) or a voltage increase.
  • Voltage function (corresponding to FIG. 6) when the upper arm switching tube, the lower arm switching tube and the PFC switching tube in the intelligent power module are all Si-based power switching devices or the upper arm in the intelligent power module
  • switching between different driving voltages can be achieved by adjusting the voltage regulating control signal of the voltage regulating control input RS.
  • the driving IC circuit 200 of the intelligent power module of this embodiment can be adapted to drive a conventional Si-based power switching device, such as a Si-based power switching device.
  • the IGBT device can also be used to drive SiC-based power switching devices, such as SiC-based MOSFET tubes and other wide band-gap power switching devices. That is, the driving IC circuit 200 of the intelligent power module of this embodiment has a very great flexibility. It also reduces the difficulty of electrical control design.
  • the driving IC circuit 200 of the intelligent power module of this embodiment is very suitable for the case where all the switching tubes use traditional Si-based power switching devices or all the switching tubes use SiC-based power switching devices. It is conducive to the performance of SiC-based power switching devices and the popularization of their applications.
  • FIG. 7 is a schematic structural diagram of a first embodiment of the intelligent power module of the present application.
  • the intelligent power module 300 includes a low-voltage area power supply input terminal VCC and a first voltage regulating terminal CTR1.
  • the driving IC circuit of the intelligent power module in this embodiment is the intelligent power as described above.
  • the module's driving IC circuit 100 that corresponds to the The driving IC circuit 100 of the intelligent power module.
  • the low-voltage area power supply input terminal VCC is connected to the working voltage input terminal VDD0 of the driving IC circuit 100 of the intelligent power module, and the first voltage regulating terminal CTR1 It is connected to the first voltage regulation control input terminal RS1 of the driving IC circuit 100 of the intelligent power module, and the second voltage regulation terminal CTR2 is connected to the second voltage regulation control input terminal RS2 of the driving IC circuit 100 of the intelligent power module.
  • the first upper arm control input terminal HIN1 is connected to the IN1 terminal of the driving IC circuit 100 of the intelligent power module
  • the second upper arm control input terminal HIN2 is connected to the driving IC circuit 100 of the intelligent power module
  • the IN2 terminal is connected
  • the third upper arm control input terminal HIN3 is connected to the IN3 terminal of the driving IC circuit 100 of the intelligent power module
  • the first lower arm control input terminal LIN1 is driven to the intelligent power module.
  • the IN4 terminal of the IC circuit 100 is connected, the second lower arm control input terminal LIN2 is connected to the IN5 terminal of the driving IC circuit 100 of the intelligent power module, and the third lower arm control input terminal LIN3 is connected to the intelligent Drive IC circuit for power moduleTen
  • the IN6 terminal of 0 is connected, the PFCIN of the PFC control input terminal is connected to the IN7 terminal of the driving IC circuit 100 of the intelligent power module, and the first output of the high-side driving circuit 102 in the driving IC circuit 100 of the intelligent power module Terminal HO1 is connected to the control terminal of the first high-side switching transistor PD11 via a resistor R11.
  • the second output terminal HO2 of the high-side drive circuit 102 is connected to the terminal via a resistor (not shown).
  • the control end of the second upper arm switch tube (not shown) is connected (the connection structure of the second upper arm switch tube is not shown in FIG. The connection structure is the same.)
  • the third output terminal HO3 of the high-side drive circuit 102 is connected to the control terminal of the third high-side switch (not shown) via a resistor (not shown) (not shown in FIG. 7).
  • connection structure of the third upper bridge switch Shows the connection structure of the third upper bridge switch, the connection structure is the same as the connection structure of the first upper bridge switch PD11); the lower bridge drive circuit in the drive IC circuit 100 of the intelligent power module
  • the first output terminal LO1 of 103 is connected to the first lower-side switching transistor PD via a resistor R21
  • the control terminal of 21 is connected, and the second output terminal LO2 of the lower-bridge driving circuit 103 is connected to the control terminal of the second lower-arm switching tube (not shown) via a resistor (not shown) (in FIG. 7).
  • connection structure of the second lower arm switch tube is not shown, and its connection structure is the same as the connection structure of the first lower arm switch tube PD21.
  • the third output terminal L03 of the lower drive circuit 103 is The resistor (not shown) is connected to the control end of the third lower-arm switch tube (not shown) (the connection structure of the third lower-arm switch tube is not shown in FIG.
  • the connection structure of the first lower bridge switch PD21 is the same); the output terminal PFCO of the PFC driving circuit 105 is connected to the control terminal of the PFC switch PD31 via a resistor R31.
  • the first upper bridge switch PD11, the second upper bridge switch (not shown), the third upper bridge switch (not shown), and the first lower bridge switch PD21 The second lower arm switch (not shown), the third lower arm switch (not shown) and the PFC switch PD31 are Si-based IGBT tubes or SiC-based MOSFET tubes.
  • the arm switch tube PD21, the second lower bridge switch (not shown) and the third lower bridge switch (not shown) are Si-based IGBT tubes
  • the PFC switch PD31 is a SiC-based MOSFET tube.
  • the voltage at the input terminal VCC of the low-voltage area power supply is 15V or 20V.
  • the intelligent power module 300 further includes a first high-voltage area power supply input terminal P1, a second high-voltage area power supply input terminal P2, and a plurality of freewheeling diodes (such as D11 and D21 in the figure).
  • the lower-side switch (not shown) and the third lower-side switch (not shown) are Si-based IGBTs
  • the PFC switch PD31 is a SiC-based MOSFET
  • the first high-side switch The collector of the tube PD11, the collector of the second upper bridge switch (not shown), the collector of the third upper bridge switch (not shown), and the power supply input terminal of the first high voltage region.
  • the emitter of the first upper bridge switch PD11 is connected to the collector of the first lower bridge switch PD21, and the emitter of the second upper bridge switch (not shown) is connected to
  • the collector of the second lower bridge switch (not shown) is connected to the collector of the third upper bridge switch (not shown). It is connected to the collector of the third lower bridge switch (not shown), the emitter of the first lower bridge switch PD21, and the second lower bridge switch (not shown).
  • the electrode and the emitter of the third lower bridge switching tube (not shown) are grounded through a resistor R42.
  • the drain of the PFC switch tube PD31 is connected to the second high-voltage region power supply input terminal P2.
  • the source is grounded through a resistor R41; the cathode of the freewheeling diode D11 is connected to the collector of the first high-side switching transistor PD11, and the anode of the freewheeling diode D11 is connected to the emitter of the first high-side switching transistor PD11.
  • the cathode of the freewheeling diode D21 is connected to the collector of the first lower-side switching transistor PD21, and the anode of the freewheeling diode D21 is connected to the emitter of the first lower-side switching transistor PD21.
  • the said The second upper bridge switch tube, the third upper bridge switch tube, the second lower bridge switch tube, and the third lower bridge switch tube also have a freewheel connected between the collector and the emitter.
  • a diode (not shown); in this embodiment, a connection node between the first upper bridge switch PD11 and the first lower bridge switch PD21, the second upper bridge switch and the first Connection node of two lower bridge arm switch tubes, and the third upper bridge switch tube and the third A connection node of the switch arm connected to the motor M.
  • the driving IC circuit 100 of the smart power module is provided with the first voltage regulating module 106 and the second voltage regulating module 107, and because the first voltage regulating module 106 and The second voltage regulating module 107 can both implement a voltage boosting function and a voltage reducing function, and can adjust the voltage regulating control of the first voltage regulating control input RS1 and the second voltage regulating control input RS2.
  • the driving IC circuit 100 of the intelligent power module in this embodiment can be applied to Driving traditional Si-based power switching devices, such as Si-based IGBT devices, can also be used to drive SiC-based power switching devices, such as wide-bandgap power switching devices such as SiC-based MOSFETs. That is, the intelligent power module 300 of this embodiment has a very large Flexibility, while also reducing the difficulty of electrical control design, very suitable for the need to use both traditional Si-based power switching devices and SiC-based power switching devices, advantageous For the performance of SiC-based power switching devices and its popularity.
  • FIG. 8 is a schematic structural diagram of a second embodiment of an intelligent power module of the present application.
  • the intelligent power module 400 includes a low-voltage area power supply input terminal VCC, a voltage regulation terminal CTR, a first upper arm control input terminal HIN1, a first Two upper arm control input HIN2, third upper arm control input HIN3, first lower arm control input LIN1, second lower arm control input LIN2, third lower arm control input LIN3, PFC Control input terminal PFCIN, multiple resistors (such as resistor R11, resistor R21, resistor R31, resistor R41 and resistor R42), first high-side switch PD11, second high-side switch (not shown), the first Three upper bridge switch tubes (not shown), first lower bridge switch PD21, second lower bridge switch (not shown), third lower bridge switch (not shown), PFC switch PD31 and the driving IC circuit of the intelligent power module.
  • the driving IC circuit of the intelligent power module in this embodiment is the driving IC circuit 200 of the intelligent power module as described above (that is
  • the low-voltage area power supply input terminal VCC is connected to the operating voltage input terminal VDD0 of the driving IC circuit 200 of the intelligent power module, and the voltage regulating terminal CTR is connected to all
  • the RS connection of the voltage control input terminal of the driving IC circuit 200 of the intelligent power module is described.
  • the connection relationship of other components in this embodiment is the same as that of the above-mentioned intelligent power module 300, and is not repeated here.
  • the bridge arm switch PD21, the second lower bridge switch (not shown), the third lower bridge switch (not shown), and the PFC switch PD31 are Si-based IGBT tubes, or the first upper switch Bridge arm switch tube PD11, second upper bridge switch (not shown), third upper bridge switch (not shown), first lower bridge switch PD21, second lower bridge switch (figure (Not shown), the third lower bridge switch (not shown), and the PFC switch PD31 is a Si-based IGBT tube and a SiC-based MOSFET tube.
  • the driving IC circuit 200 of the intelligent power module adopts the voltage regulating module 108 shown in FIG. 6.
  • the second lower arm switch tube (not shown), the third lower arm switch tube (not shown), and the PFC switch tube PD31 are Si-based IGBT tubes, this embodiment can be controlled by controlling the voltage regulation control.
  • the voltage-regulating control signal of the input terminal RS causes the analog switch 1082 ′ in the voltage-regulating module 108 to be labeled with a terminal labeled 0, so that the voltage-regulating module 108 directly outputs a signal suitable for driving a Si-based power switching device.
  • the analog switch in the voltage regulating module 108 can be turned on.
  • Reference numeral 1 is an end 1082 of the hit, so that the voltage of the voltage regulator module 15V operating voltage input terminal 108 pairs VDD0 inputted boosting process to output a suitable drive voltage 20V SiC substrate of the power switching device.
  • the driving IC circuit 200 of the intelligent power module adopts the voltage regulating module 108 shown in FIG. 5.
  • the second lower arm switch (not shown), the third lower arm switch (not shown), and the PFC switch PD31 are Si-based power switching devices, this embodiment can be controlled by controlling the adjustment.
  • the voltage regulating control signal of the voltage controlling input RS causes the analog switch 1082 in the voltage regulating module 108 to be labeled with a terminal number 1 so that the voltage regulating module 108 inputs the voltage of the working voltage input terminal VDD0.
  • the 20V voltage is subjected to step-down processing to output a driving voltage of 15V suitable for driving Si-based power switching devices.
  • the voltage regulation control can be controlled by The voltage-regulating control signal of the input RS causes the analog switch 1082 in the voltage-regulating module 108 to reach the terminal labeled 0, so that the voltage-regulating module 108 directly outputs 20V suitable for driving the SiC-based power switching device. Driving voltage.
  • the intelligent power module 400 of this embodiment has the voltage regulating module 108 provided in the driving IC circuit 200 of the intelligent power module, and the voltage regulating module 108 in this embodiment can implement a voltage reduction function. (Corresponds to FIG. 5) or boost function (corresponds to FIG.
  • the third upper bridge switch (not shown), the first lower bridge switch PD21, the second lower bridge switch (not shown), the third lower bridge switch (not shown), and All the PFC switching tubes PD31 are Si-based power switching devices or the first high-side switching tube PD11, the second high-side switching tube (not shown), the third high-side switching tube (not shown),
  • the voltage regulation control signal of the voltage regulation control input terminal RS can be adjusted to achieve different driving voltages.
  • the driving IC circuit 200 of the intelligent power module of this embodiment can be adapted to drive a conventional Si-based power switching device.
  • Si-based IGBT devices can also be used to drive SiC-based power switching devices, such as wide-bandgap power switching devices such as SiC-based MOSFETs. That is, the intelligent power module 400 of this embodiment has great flexibility and reduces power consumption. Control the design difficulty, the intelligent power module 400 of this embodiment is very suitable for the case where all switching tubes use traditional Si-based power switching devices or all switching tubes sample SiC-based power switching devices, which is conducive to the performance of SiC-based power switching devices. And its popularity.
  • the present application provides a driving IC circuit 500 for an intelligent power module, which is used to further improve the integration degree of the intelligent power module to reduce the cost of the intelligent power module and improve the reliability of the intelligent power module.
  • FIG. 9 is a schematic structural diagram of an embodiment of a driving IC circuit of an intelligent power module of the present application.
  • the driving IC circuit 500 of the intelligent power module includes a first upper bridge control signal input terminal HIN1, a second Upper bridge control signal input terminal HIN2, third upper bridge control signal input terminal HIN3, fourth upper bridge control signal input terminal HIN4, fifth upper bridge control signal input terminal HIN5, sixth upper bridge control signal input terminal HIN6, first Lower bridge control signal input terminal LIN1, second lower bridge control signal input terminal LIN2, third lower bridge control signal input terminal LIN3, fourth lower bridge control signal input terminal LIN4, fifth lower bridge control signal input terminal LIN5, sixth Lower bridge control signal input terminal LIN6, PFC control signal input terminal PFCIN, logic input buffer circuit 501, first upper bridge drive circuit 502, first lower bridge drive circuit 503, second upper bridge drive circuit 504, second lower bridge drive A circuit 505 and a PFC driving circuit 506.
  • the logic input buffer circuit 501 is configured to control signals input to the first upper bridge control signal input terminal HIN1, the second upper bridge control signal input terminal HIN2, and the third upper bridge control signal input terminal HIN3. Performing wave filtering processing, and outputting the control signal after the line wave filtering processing to the first upper bridge driving circuit 502; the logic input buffer circuit 501 sends the first lower bridge control signal input terminal LIN1, the first The control signals input by the two lower bridge control signal input terminals LIN2 and the third lower bridge control signal input terminal LIN3 are subjected to whole wave filtering processing, and the control signals after the whole wave filtering processing are output to the first lower bridge driving circuit 503; the logic input buffer circuit 501 performs wave shaping on the control signals input from the fourth upper bridge control signal input terminal HIN4, the fifth upper bridge control signal input terminal HIN5, and the sixth upper bridge control signal input terminal HIN6.
  • the first upper-bridge driving circuit 502 is configured to drive the upper-arm switching tube (not shown) corresponding to an external first motor (not shown) according to a control signal output from the logic input buffer circuit 501. jobs. It should be noted that the upper-arm switching tube corresponding to the external first motor includes three switching tubes. Therefore, the output of the first upper-bridge driving circuit 502 includes a first output terminal HO1 and a second output terminal HO2. And the third output terminal HO3;
  • the first lower bridge driving circuit 503 is configured to drive the operation of a lower bridge switch (not shown) corresponding to an external first motor according to a control signal output from the logic input buffer circuit 501. It should be noted that the lower-arm switching tube corresponding to the external first motor also includes three switching tubes. Therefore, the output of the first lower-bridge driving circuit 503 includes a first output terminal LO1 and a second output terminal. LO2 and third output LO3;
  • the second upper-bridge driving circuit 504 is configured to drive the upper-arm switching tube (not shown) corresponding to an external second motor (not shown) according to a control signal output from the logic input buffer circuit 501. jobs. It should be noted that the upper-arm switching tube corresponding to the external second motor includes three switching tubes. Therefore, the output of the second upper-bridge driving circuit 504 includes a first output terminal HO4 and a second output terminal HO5. And the third output HO6;
  • the second lower-bridge driving circuit 505 is configured to drive a lower-bridge arm switch tube (not shown) corresponding to an external second motor according to a control signal output from the logic input buffer circuit 501. It should be noted that the lower-bridge arm switching tube corresponding to the external second motor also includes three switching tubes. Therefore, the output terminal of the second lower-bridge driving circuit 505 includes a first output terminal LO4 and a second output terminal. LO5 and third output LO6;
  • the PFC driving circuit 506 is configured to drive the work of an external PFC switch (not shown) according to a control signal output from the logic input buffer circuit 501.
  • the output terminal of the PFC driving circuit 506 is PFCO.
  • the driving IC circuit 500 of the intelligent power module of this embodiment further includes an enable terminal EN, an error signal output terminal FAULT, a reset terminal RS, a protection circuit 507, an error judgment logic circuit 508, and a drive logic circuit 509.
  • the driving IC circuit 500 is reset when a reset signal is input to the reset terminal RS.
  • the protection circuit 507 is configured to output a first under-voltage protection signal to the low-voltage side power supply input terminal VDD (ie, the driving voltage input port) of the driving IC circuit 500 of the smart power module of the embodiment when an under-voltage occurs.
  • the error judging logic circuit 508, outputting an overcurrent protection signal to the error judging logic circuit 508 when an overcurrent occurs in any of the above-mentioned switching transistors, and when the intelligent power module is overtemperature Outputting an over-temperature protection signal to the error judging logic circuit 508;
  • the error judgment logic circuit 508 is configured to output an error signal to the error signal output terminal FUALT when the first undervoltage protection signal, the overcurrent protection signal, or / and the overtemperature protection signal are received. ;
  • the driving logic circuit 509 is configured to output an enable signal to the logic input buffer circuit 501 when the error determination logic circuit 508 does not output the error signal and the enable terminal EN inputs an enable signal to control
  • the first upper bridge drive circuit 502, the first lower bridge drive circuit 503, the second upper bridge drive circuit 504, the second lower bridge drive circuit 505, and the PFC drive circuit 506 start to operate.
  • the protection circuit 507 includes a low-side under-voltage protection circuit 5071, an over-current protection circuit 5072, and an over-temperature protection circuit 5073.
  • the low-voltage-side under-voltage protection circuit 5071 is configured to output a first under-voltage protection signal to the error judgment when an under-voltage occurs at the low-voltage side power supply input terminal VDD of the driving IC circuit 500 of the intelligent power module of this embodiment.
  • the over-current protection circuit 5072 is configured to output an over-current protection signal to the error determination logic circuit 508 when an over-current occurs in any one of the above-mentioned switches.
  • the over-temperature protection circuit 5073 is configured to output an over-temperature protection signal to the error determination logic circuit 508 when the intelligent power module is over-temperature.
  • the driving IC circuit 500 of the intelligent power module of this embodiment further includes a high-voltage-side undervoltage protection circuit 510, where the high-voltage-side undervoltage protection circuit 510 is used for the high-voltage side of the driving IC circuit 500 of the intelligent power module of this embodiment.
  • a second undervoltage protection signal is output to the logic input buffer circuit 501 to control the first upper-bridge driving circuit 502, the first lower-bridge driving circuit 503, the first The two upper-bridge driving circuits 504, the second lower-bridge driving circuit 505, and the PFC driving circuit 506 stop working.
  • the driving IC circuit 500 of the intelligent power module of this embodiment is configured to drive the first upper-bridge driving circuit 502 for driving the upper-arm switching tube corresponding to the external first motor, and to drive the The first lower-bridge driving circuit 503 operated by the corresponding lower-arm switch tube, the second upper-bridge driving circuit 504 operated by the upper-arm switch tube corresponding to the external second motor, and used to drive The second lower-bridge driving circuit 505 and the PFC driving circuit 506 that work with the lower-bridge arm switch tube corresponding to the external second motor are integrated in the same IC chip, so that the driving of the intelligent power module in this embodiment Compared with the driving IC circuit of the intelligent power module in the prior art, the IC circuit 500 further improves the integration degree of the intelligent power module, thereby reducing the cost of the intelligent power module and also improving the reliability of the intelligent power module.
  • FIG. 10 is a schematic structural diagram of an embodiment of the intelligent power module of the present application.
  • the intelligent power module 600 includes a PFC switch Q5, a plurality of resistors (such as Resistor R1, Resistor R2, Resistor R3, Resistor R4, Resistor R5), the first upper bridge switch Q1 corresponding to the external first motor M1, the second upper bridge switch (not shown), the third upper bridge Arm switch tube (not shown), first lower bridge switch Q2, second lower bridge switch (not shown) and third lower bridge switch (not shown), and external second motor Corresponds to the fourth upper bridge switch Q3, the fifth upper bridge switch (not shown), the sixth upper bridge switch (not shown), the fourth lower bridge switch Q4, and the fifth lower bridge The switch tube (not shown) and the sixth lower bridge switch tube (not shown), and the driving IC circuit 500 of the intelligent power module as described above (ie, the driving IC circuit 500 of the intelligent power module shown in FIG. 9) .
  • the first output terminal HO1 of the first upper-bridge driving circuit 502 in the driving IC circuit 500 is connected to the control terminal of the first upper-bridge switching transistor Q1 via the resistor R1.
  • the second output terminal HO2 of the first upper-bridge driving circuit 502 is connected to the control terminal of the second upper-bridge arm switch (not shown) via a resistor (not shown) (that is, not shown in FIG. 10).
  • connection structure of the second upper bridge switching transistor is the same as the connection structure of the first upper bridge switching transistor Q1), and the third output terminal HO3 of the first upper bridge driving circuit 502 passes a resistor (Not shown) is connected to the control end of the third upper bridge switch (not shown) (that is, the connection structure of the third upper bridge switch is not shown in FIG.
  • the connection structure of the first upper bridge switch Q1 is the same); the first output terminal LO1 of the first lower bridge drive circuit 503 in the driving IC circuit 500 is connected to the first lower bridge switch Q2 via a resistor R2 The control terminal is connected, and the second output terminal LO2 of the first lower-bridge driving circuit 503 is connected to the second output terminal LO2 through a resistor (not shown).
  • the control ends of the two lower arm switch tubes are connected (that is, the connection structure of the second lower arm switch tube is not shown in FIG. 10, and its connection structure is connected to that of the first lower arm switch tube Q2.
  • the connection structure is the same)
  • the third output terminal LO3 of the first lower-bridge driving circuit 503 is connected to the control terminal of the third lower-bridge arm switch tube (not shown) via a resistor (not shown) (that is, the figure (10) the connection structure of the third lower arm switch tube is not shown, and the connection structure is the same as the connection structure of the first lower arm switch tube Q2);
  • the first output terminal HO4 of the second upper-bridge driving circuit 504 in the driving IC circuit 500 is connected to the control terminal of the fourth upper-bridge switching transistor Q3 via a resistor R3.
  • the second output terminal HO5 is connected to the control terminal of the fifth upper-arm switch (not shown) via a resistor (not shown) (that is, the connection of the fifth upper-arm switch is not shown in FIG. 10).
  • the connection structure is the same as the connection structure of the fourth upper bridge switching transistor Q3)
  • the third output terminal HO6 of the second upper bridge driving circuit 504 is connected to the sixth through a resistor (not shown)
  • the control end of the upper bridge switch (not shown) is connected (that is, the connection structure of the sixth upper bridge switch is not shown in FIG.
  • connection structure is connected to the fourth upper bridge switch Q3.
  • the structure is the same; the first output terminal LO4 of the second lower-bridge driving circuit 505 in the driving IC circuit 500 is connected to the control terminal of the fourth lower-bridge arm switching tube Q4 through the resistor R4, and the second lower-bridge The second output terminal LO5 of the driving circuit 505 is connected to the fifth lower bridge switching transistor (not shown) via a resistor (not shown). Control end connection (that is, the connection structure of the fifth lower bridge switch tube is not shown in FIG.
  • connection structure is the same as the connection structure of the fourth lower bridge switch Q4), the second lower bridge
  • the third output terminal LO6 of the driving circuit 505 is connected to the control terminal of the sixth lower bridge switch (not shown) via a resistor (not shown) (that is, the sixth lower bridge is not shown in FIG. 10).
  • the connection structure of the switch tube is the same as the connection structure of the fourth lower-arm switch tube Q4); in this embodiment, the output terminal PFCO of the PFC driving circuit 506 in the driving IC circuit 500 passes a resistor R5 is connected to the control terminal of the PFC switch Q5.
  • the low-side power supply input terminal VDD of the driving IC circuit 500 provides a driving voltage to the external first motor M1, the external second motor M2, and the PFC driving circuit 506.
  • the intelligent power module 600 of this embodiment further includes a first current sampling resistor R6, a second current sampling resistor R7, and a third current sampling resistor R8.
  • the first terminal of the first current sampling resistor R6 is connected to the current output terminal of the PFC switch Q5, and the second terminal of the first current sampling resistor R6 is grounded.
  • the first end is respectively connected to the current output ends of the first lower bridge switch Q2, the second lower bridge switch (not shown) and the third lower bridge switch (not shown).
  • a second terminal of the second current sampling resistor R7 is grounded; a first terminal of the third current sampling resistor R8 is respectively connected to the fourth lower bridge switch Q4 and the fifth lower bridge switch ( (Not shown) and the current output terminal of the sixth lower-bridge switch tube (not shown), and the second terminal of the third current sampling resistor R8 is grounded.
  • a first terminal of the first current sampling resistor R6 is further connected to a first input terminal of the overcurrent protection circuit 5072 in the driving IC circuit 500.
  • the first terminal is also connected to the second input terminal of the overcurrent protection circuit 5072 in the driving IC circuit 500, and the first terminal of the third current sampling resistor R8 is also connected to all the terminals in the driving IC circuit 500.
  • the third input terminal of the overcurrent protection circuit 5072 is connected.
  • the intelligent power module 600 of this embodiment further includes a temperature detection circuit 601 for detecting the temperature of the intelligent power module 600 of this embodiment.
  • the PFC switch Q5, the first upper bridge switch Q1, the second upper bridge switch (not shown), the third upper bridge switch (not shown), and the first lower Bridge arm switch Q2, second lower bridge switch (not shown), third lower bridge switch (not shown), fourth upper bridge switch Q3, fifth upper bridge switch (figure Not shown), the sixth upper bridge switch (not shown), the fourth lower bridge switch Q4, the fifth lower bridge switch (not shown), and the sixth lower bridge switch (Figure (Not shown) is an IGBT tube.
  • the intelligent power module 600 of this embodiment further includes a first high-voltage area power supply input terminal P1, a second high-voltage area power supply input terminal P2, and multiple freewheeling diodes (such as a freewheeling diode FRD1, a freewheeling diode FRD2, and a freewheeling diode FRD3 , Freewheeling diode FRD4 and freewheeling diode FRD5), PFC signal output terminal PFCOUT and first diode D1.
  • multiple freewheeling diodes such as a freewheeling diode FRD1, a freewheeling diode FRD2, and a freewheeling diode FRD3 , Freewheeling diode FRD4 and freewheeling diode FRD5
  • An electrode is connected to the first high-voltage region power supply input terminal P1
  • an emitter of the first upper bridge switching transistor Q1 is connected to a collector of the first lower bridge switching transistor Q2
  • the second upper bridge The emitter of the arm switch tube (not shown) is connected to the collector of the second lower bridge switch (not shown), and the emitter of the third upper bridge switch (not shown) is connected to the collector
  • the collector connection of the third lower bridge switch (not shown) is described, and the emitter of the fourth upper bridge switch Q3 is connected to the collector of the fourth lower bridge switch Q4.
  • the emitter of the five upper bridge switching tubes (not shown) is connected to the collector of the fifth lower bridge switching tube (not shown), and the sixth upper bridge
  • the emitter of the off-pipe (not shown) is connected to the collector of the sixth lower bridge switch (not shown); the emitter of the first lower bridge switch Q2 and the second lower bridge
  • the emitter of the arm switch tube (not shown) and the emitter of the third lower bridge arm switch (not shown) are connected to the first end of the second current sampling resistor R7, and the fourth lower bridge
  • the emitter of the arm switch tube Q4 the emitter of the fifth lower arm switch tube (not shown), the emitter of the sixth lower arm switch tube (not shown), and the third current sample.
  • the first end of the resistor R8 is connected; the collector of the PFC switch Q5 is connected to the PFC signal output terminal PFCOUT and the anode of the first diode D1, and the cathode of the first diode D1 is connected to The second high-voltage region power supply input terminal P2 is connected, and the emitter of the PFC switch Q5 is connected to the first terminal of the first current sampling resistor R6.
  • the cathode of the free-wheeling diode FRD1 is connected to the collector of the first upper-bridge switch Q1
  • the anode of the free-wheeling diode FRD1 is connected to the emitter of the first upper-bridge switch Q1.
  • the cathode of the free-wheeling diode FRD2 is connected to the collector of the first lower-bridge switch Q2, the anode of the free-wheeling diode FRD2 is connected to the emitter of the first lower-bridge switch Q2, and the cathode of the free-wheeling diode FRD3 is connected to The collector of the fourth high-side switch Q3 is connected, the anode of the freewheeling diode FRD3 is connected to the emitter of the fourth high-side switch Q3, and the cathode of the freewheeling diode FRD4 is connected to the fourth lower bridge.
  • the collector of the arm switch tube Q4 is connected, and the anode of the freewheeling diode FRD4 is connected to the emitter of the fourth lower-bridge arm switch tube Q4. Similarly, the collector and the emitter of each other switch tube are connected with a The current diode (not shown) will not be repeated here.
  • connection node between the first upper bridge switch Q1 and the first lower bridge switch Q2, and a connection between the second upper bridge switch and the second lower bridge switch A connection node and a connection node between the third upper bridge switch tube and the third lower bridge switch tube are connected to an external first motor M1, and the fourth upper bridge switch Q3 is connected to the fourth lower bridge.
  • a connection node of the arm switch tube Q4, a connection node of the fifth upper bridge switch tube and the fifth lower bridge switch tube, and a sixth upper bridge switch and the sixth lower bridge switch tube The connection node is connected to the external second motor M2.
  • the intelligent power module 600 of this embodiment is applied to an air conditioner (such as a variable frequency air conditioner)
  • the first motor M1 may be a fan of the air conditioner
  • the second motor M2 may be a compressor of the air conditioner.
  • the intelligent power module 600 includes a first upper-bridge driving circuit 502, a first lower-bridge driving circuit 503, a second upper-bridge driving circuit 504, and the second driving IC circuit 500.
  • the lower-bridge driving circuit 505 and the PFC driving circuit 506 are both integrated in the same IC chip, so that the intelligent power module 600 of this embodiment further improves the integration degree of the intelligent power module compared with the intelligent power module in the prior art. Thus reducing the cost of intelligent power modules.
  • the intelligent power module 600 of this embodiment shares a set of protection circuits 507 with the external first motor M1, the external second motor M2, and the PFC switch Q5.
  • the low-voltage-side under-voltage protection circuit 5071 in the protection circuit 507 outputs a first under-voltage protection signal to the error determination logic circuit 508.
  • the overcurrent protection circuit 5072 in the protection circuit 507 outputs an overcurrent protection signal to the error determination logic circuit 508.
  • the over-temperature protection circuit 5073 in the protection circuit 507 outputs an over-temperature protection signal to the error determination logic circuit 508, and the error determination logic circuit 508 receives the first When the under-voltage protection signal, the over-current protection signal, and / or the over-temperature protection signal, an error signal is output to the error signal output terminal FUALT, and the error signal output terminal FUALT and external control
  • the external controller receives the error signal
  • the external controller outputs a corresponding control signal to the driving IC circuit 500 to control the first upper-bridge driving circuit 502, the The first lower bridge drive circuit 503, the second upper bridge drive circuit 504, the second lower bridge drive circuit 505, and the PFC drive circuit 506 stop working, and then control the first motor M1, the second motor M2, and all The PFC switch Q5 stops working.
  • the high voltage side undervoltage protection circuit 510 when an undervoltage occurs on the high voltage side power supply input terminal (not shown) of the driving IC circuit 500, the high voltage side undervoltage protection circuit 510 will output a second undervoltage protection signal to the
  • the logic input buffer circuit 501 is configured to control the first upper bridge driving circuit 502, the first lower bridge driving circuit 503, the second upper bridge driving circuit 504, the second lower bridge driving circuit 505, and the PFC driving circuit 506 to stop working. That is, this embodiment can effectively prevent a problem in one of the separated devices from causing other modules to continue to work, so that the intelligent power module 600 of this embodiment can be better protected, and the reliability of the intelligent power module 600 is improved.
  • the intelligent power module 600 of this embodiment uses the highly integrated driving IC circuit 500, and the intelligent power module 600 of this embodiment shares a set of protection circuits 507, which simplifies the highly integrated intelligent power module (also referred to as high).
  • the internal structure of the integrated IPM greatly improves the integration and reliability of the intelligent power module, and also reduces the cost and volume.
  • the intelligent power module 600 in this embodiment also reduces the internal wiring difficulty of the intelligent power module.
  • the intelligent power module 600 of this embodiment has the advantages of simple and reasonable structure, flexible operation, low cost, high integration, high reliability, and wide application range.
  • the air conditioner includes an intelligent power module.
  • the air conditioner of this embodiment adopts the technical solution of the above-mentioned intelligent power module, the air conditioner has all the beneficial effects of the above-mentioned intelligent power module.

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Abstract

本申请公开了一种智能功率模块的驱动IC电路、智能功率模块及空调器,该智能功率模块的驱动IC电路包括工作电压输入端、逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路、PFC驱动电路、第一调压控制输入端、第二调压控制输入端、第一调压模块和第二调压模块;第一调压模块根据第一调压控制输入端的信号,将工作电压输入端输入的电压进行升压或降压处理;第二调压模块根据第二调压控制输入端的信号,将工作电压输入端输入的电压进行升压或降压处理,或将工作电压输入端的电压输出至PFC逻辑缓冲电路及所述PFC驱动电路。本申请解决了现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题。

Description

智能功率模块的驱动IC电路、智能功率模块及空调器
本申请要求2018年07月24日,申请号为201810832385.6、201821189193.X、201821191216.0以及201810832530.0,申请名称为“智能功率模块的驱动IC电路、智能功率模块及空调器”的中国专利申请的优先权,在此将其全文引入作为参考。
技术领域
本申请涉及智能功率模块领域,尤其涉及一种智能功率模块的驱动IC电路、智能功率模块及空调器。
背景技术
智能功率模块,即IPM(Intelligent Power Module),是一种将电力电子和集成电路技术结合的功率驱动类产品。智能功率模块把功率开关器件和高压驱动电路集成在一起,并内藏有过电压、过电流和过热等故障检测电路。智能功率模块一方面接收MCU的控制信号,驱动后续电路工作,另一方面将系统的状态检测信号送回MCU。与传统分立方案相比,智能功率模块以其高集成度、高可靠性等优势赢得越来越大的市场,尤其适合于驱动电机的变频器及各种逆变电源,是变频调速、冶金机械、电力牵引、伺服驱动及变频家电的一种理想电力电子器件。
IPM在空调器中广泛应用,目前的变频空调包含风机、压缩机和PFC模块,现有的变频空调通常都是由三个分立的IPM来驱动其风机、压缩机和PFC模块。但是,目前已有的变频空调的高集成IPM只是单纯地将风机的驱动电路和压缩机的驱动电路简单得集成在一起,其内部结构类似于将风机的驱动电路和压缩机的驱动电路进行简单的叠加,并没有实现真正意义上高集成和小型化,因此,如何进一步优化空调器的高集成IPM是亟待解决的问题。
并且,现有的智能功率模块内部的功率开关器件为Si基功率开关器件,人们对Si基功率开关器件的研究已经非常成熟,Si基功率开关器件的性能即将逼近材料性质的极限,因此,现有技术很难通过Si基功率开关器件的结构创新和制造工艺改进等途径来大幅度提高智能功率模块的整体性能。而以SiC基功率开关器件为代表的第三代半导体(即宽禁带半导体功率器件)具有击穿电压高、功率密度高、输出功率高、工作频率高及适合高温下工作等优点,例如,SiC基MOSFET管具有很高的阻断电压,没有类似Si基IGBT管的拖尾电流,使得SiC基MOSFET管的动态损耗很低;并且SiC材料的二极管也具有非常低的开关损耗;同时SiC材料又具有三倍于Si材料的热导率,使得基于SiC材料的IPM模块具有更好的工作温度和良好的可靠性。在高压功率市场,SiC基功率开关器件(如SiC基MOSFET管)被认为是Si基IGBT管的完美替代者。
然而,通常情况下Si基功率开关器件(如Si基MOSFET管和Si基IGBT管等)适合在12-15V的驱动电压下工作,因此,变频家电(如变频空调)中的智能功率模块的驱动电压VDD通常设置为15V,即智能功率模块内的Si基功率开关器件的栅极驱动信号(高电平)为15V。但是,SiC基功率开关器件(如SiC基MOSFET管)更适合在18~20V的驱动电压下工作,从而导致现有智能功率模块内Si基功率开关器件的驱动IC(也称智能功率模块的驱动IC)不适合直接用于驱动SiC基功率开关器件。并且,在多数情况下,智能功率模块中可能同时具有SiC基功率开关器件和Si基功率开关器件,例如,智能功率模块中的PFC开关管普遍采用SiC基功率开关器件替代原来的Si基功率开关器件,以提高功率校正因子,进而提高电源利用率,而智能功率模块中的逆变器件(即上桥臂开关管和下桥臂开关管)仍然采用Si基功率开关器件,如果两者采用相同的Si基功率开关器件的驱动电压,则可能造成SiC基功率开关器件的性能得不到有效发挥。
申请内容
本申请的主要目的在于提供一种智能功率模块的驱动IC电路,旨在解决现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题。
为了实现上述目的,本申请提供一种智能功率模块的驱动IC电路,所述驱动IC电路包括工作电压输入端、逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路、PFC驱动电路、第一调压控制输入端、第二调压控制输入端、第一调压模块和第二调压模块;其中:
所述第一调压控制输入端,用于输入第一调压控制信号;
所述第一调压模块,用于根据所述第一调压控制信号,将所述工作电压输入端输入的电压进行升压或降压处理,为所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路提供驱动输入电压;或者将所述工作电压输入端输入的电压直接输出至所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路的驱动电压输入端;
所述第二调压控制输入端,用于输入第二调压控制信号;
所述第二调压模块,用于根据所述第二调压控制信号,将所述工作电压输入端输入的电压进行升压或降压处理,为所述PFC逻辑缓冲电路及所述PFC驱动电路提供驱动输入电压;或者将所述工作电压输入端输入的电压直接输出至所述PFC逻辑缓冲电路及所述PFC驱动电路的驱动电压输入端。
可选地,所述第一调压模块的输入端与所述工作电压输入端连接,所述第一调压模块的控制端与所述第一调压控制输入端连接,所述第一调压模块的输出端分别与所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路的驱动电压输入端连接;所述第二调压模块的输入端与所述工作电压输入端连接,所述第二调压模块的控制端与所述第二调压控制输入端连接,所述第二调压模块的输出端分别与所述PFC逻辑缓冲电路及所述PFC驱动电路的驱动电压输入端连接;所述逆变逻辑缓冲电路的输出端分别与所述上桥驱动电路的输入端和所述下桥驱动电路的输入端连接,所述PFC逻辑缓冲电路的输出端与所述PFC驱动电路的输入端连接。
可选地,所述第一调压模块包括第一升压模块、第一降压模块和第一模拟开关,所述第一升压模块和所述第一降压模块的输入端与所述工作电压输入端连接,所述第一升压模块的输出端与所述第一模拟开关的第一输入端连接,所述第一降压模块的输出端与所述第一模拟开关的第二输入端连接,所述第一模拟开关的第三输入端直接与所述工作电压输入端连接,所述第一模拟开关的公共端分别与所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路的驱动电压输入端连接,所述第一模拟开关的控制端与所述第一调压控制输入端连接。
可选地,所述第二调压模块包括第二升压模块、第二降压模块和第二模拟开关,所述第二升压模块和所述第二降压模块的输入端与所述工作电压输入端连接,所述第二升压模块的输出端与所述第二模拟开关的第一输入端连接,所述第二降压模块的输出端与所述第二模拟开关的第二输入端连接,所述第二模拟开关的第三输入端直接与所述工作电压输入端连接,所述第二模拟开关的公共端分别与所述PFC逻辑缓冲电路及所述PFC驱动电路的驱动电压输入端连接,所述第二模拟开关的控制端与所述第二调压控制输入端连接。
此外,为实现上述目的,本申请还提供一种智能功率模块的驱动IC电路,所述驱动IC电路包括工作电压输入端、逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路、PFC驱动电路、调压控制输入端及调压模块;其中:
所述调压控制输入端,用于输入调压控制信号;
所述调压模块,用于根据所述调压控制输入端所输入的调压控制信号,将所述工作电压输入端输入的电压进行调压处理,为所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路提供驱动输入电压;或者将所述工作电压输入端输入的电压直接输出至所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端。
可选地,所述调压模块的输入端与所述工作电压输入端连接,所述调压模块的控制端与所述调压控制输入端连接,所述调压模块的输出端分别与所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端连接;所述逆变逻辑缓冲电路的输出端分别与所述上桥驱动电路的输入端和所述下桥驱动电路的输入端连接,所述PFC逻辑缓冲电路的输出端还与所述PFC驱动电路的输入端连接。
可选地,所述调压模块包括降压模块和模拟开关,所述降压模块的输入端与所述工作电压输入端连接,所述降压模块的输出端与所述模拟开关的第一输入端连接,所述模拟开关的第二输入端直接与所述工作电压输入端连接,所述模拟开关的公共端分别与所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端连接,所述模拟开关的控制端与所述调压控制输入端连接。
可选地,所述调压模块包括升压模块和模拟开关,所述升压模块的输入端与所述工作电压输入端连接,所述升压模块的输出端与所述模拟开关的第一输入端连接,所述模拟开关的第二输入端直接与所述工作电压输入端连接,所述模拟开关的公共端分别与所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端连接,所述模拟开关的控制端与所述调压控制输入端连接。
此外,为实现上述目的,本申请还提供一种智能功率模块,所述智能功率模块包括低压区供电电源输入端、第一调压端、第二调压端、上桥臂控制输入端、下桥臂控制输入端、PFC控制输入端、多个电阻、第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管、PFC开关管、以及如上所述的智能功率模块的驱动IC电路;其中:
所述低压区供电电源输入端与所述驱动IC电路的工作电压输入端连接,所述第一调压端与所述驱动IC电路的第一调压控制输入端连接,所述第二调压端与所述驱动IC电路的第二调压控制输入端连接,所述上桥臂控制输入端与所述驱动IC电路的上桥控制输入端连接,所述下桥臂控制输入端与所述驱动IC电路的下桥控制输入端连接,所述PFC控制输入端与所述驱动IC电路的PFC控制输入端连接;所述驱动IC电路中的上桥驱动电路的第一输出端经一所述电阻与所述第一上桥臂开关管的控制端连接,所述上桥驱动电路的第二输出端经一所述电阻与所述第二上桥臂开关管的控制端连接,所述上桥驱动电路的第三输出端经一所述电阻与所述第三上桥臂开关管的控制端连接;所述驱动IC电路中的下桥驱动电路的第一输出端经一所述电阻与所述第一下桥臂开关管的控制端连接,所述下桥驱动电路的第二输出端经一所述电阻与所述第二下桥臂开关管的控制端连接,所述下桥驱动电路的第三输出端经一所述电阻与所述第三下桥臂开关管的控制端连接;所述驱动IC电路中的PFC驱动电路的输出端经一所述电阻与所述PFC开关管的控制端连接;
所述第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管及所述PFC开关管为Si基IGBT管或SiC基MOSFET管。
此外,为实现上述目的,本申请还提供一种智能功率模块,所述智能功率模块包括低压区供电电源输入端、调压端、上桥臂控制输入端、下桥臂控制输入端、PFC控制输入端、多个电阻、第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管、PFC开关管、以及如上所述的智能功率模块的驱动IC电路;其中:
所述低压区供电电源输入端与所述驱动IC电路的工作电压输入端连接,所述调压端与所述驱动IC电路的调压控制输入端连接,所述上桥臂控制输入端与所述驱动IC电路的上桥控制输入端连接,所述下桥臂控制输入端与所述驱动IC电路的下桥控制输入端连接,所述PFC控制输入端与所述驱动IC电路的PFC输入端连接;所述驱动IC电路中的上桥驱动电路的第一输出端经一所述电阻与所述第一上桥臂开关管的控制端连接,所述上桥驱动电路的第二输出端经一所述电阻与所述第二上桥臂开关管的控制端连接,所述上桥驱动电路的第三输出端经一所述电阻与所述第三上桥臂开关管的控制端连接;所述驱动IC电路中的下桥驱动电路的第一输出端经一所述电阻与所述第一下桥臂开关管的控制端连接,所述下桥驱动电路的第二输出端经一所述电阻与所述第二下桥臂开关管的控制端连接,所述下桥驱动电路的第三输出端经一所述电阻与所述第三下桥臂开关管的控制端连接;所述驱动IC电路中的PFC驱动电路的输出端经一所述电阻与所述PFC开关管的控制端连接;
所述第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管及所述PFC开关管为Si基IGBT管,或者所述第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管及所述PFC开关管为SiC基MOSFET管。
此外,为实现上述目的,本申请还提供一种空调器,所述空调器包括如上所述的智能功率模块。
本申请智能功率模块的驱动IC电路相对于现有技术中的智能功率模块的驱动IC电路,增设了所述第一调压控制输入端、第二调压控制输入端、所述第一调压模块及所述第二调压模块,因此,本申请智能功率模块的驱动IC电路能够根据智能功率模块内上桥臂开关管、下桥臂开关管及PFC开关管的类型(为SiC基功率开关器件或Si基功率开关器件)以及所述工作电压输入端所输入的电压的大小,在所述第一调压控制输入端和所述第二调压控制输入端输入相应的调压控制信号,即可实现同时为智能功率模块内的SiC基功率开关器件和Si基功率开关器件提供合适的驱动电压的目的,从而解决了现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图示出的结构获得其他的附图。
图1为本申请智能功率模块的驱动IC电路第一实施例的结构示意图;
图2为本申请智能功率模块的驱动IC电路第一实施例中所述第一调压模块的结构示意图;
图3为本申请智能功率模块的驱动IC电路第一实施例中所述第二调压模块的结构示意图;
图4为本申请智能功率模块的驱动IC电路第二实施例的电路结构示意图;
图5为本申请智能功率模块的驱动IC电路第二实施例中所述调压模块一实施例的结构示意图;
图6为本申请智能功率模块的驱动IC电路第二实施例中所述调压模块另一实施例的结构示意图;
图7为本申请智能功率模块第一实施例的结构示意图;
图8为本申请智能功率模块第二实施例的结构示意图;
图9为本申请智能功率模块的驱动IC电路第三实施例的结构示意图;
图10为本申请智能功率模块第三实施例的结构示意图。
本申请目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。
具体实施方式
应当理解,此处所描述的具体实施例仅仅用以解释本申请,并不用于限定本申请。
本申请提供一种智能功率模块的驱动IC电路100,用于解决现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题。
图1为本申请智能功率模块的驱动IC电路第一实施例的结构示意图,参照图1,本实施例中,该智能功率模块的驱动IC电路100包括工作电压输入端VDD0、逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104、PFC驱动电路105、第一调压控制输入端RS1、第二调压控制输入端RS2、第一调压模块106和第二调压模块107。
其中,所述第一调压控制输入端RS1,用于输入第一调压控制信号;
所述第一调压模块106,用于根据所述第一调压控制输入端RS1输入的所述第一调压控制信号,将所述工作电压输入端VDD0输入的电压进行升压或降压处理,为所述逆变逻辑缓冲电路101、上桥驱动电路102及下桥驱动电路103提供驱动输入电压;或者将所述工作电压输入端VDD0输入的电压直接输出至所述逆变逻辑缓冲电路101、上桥驱动电路102及下桥驱动电路103的驱动电压输入端,此时所述逆变逻辑缓冲电路101、上桥驱动电路102及下桥驱动电路103的驱动电压输入端的驱动电压等于所述工作电压输入端VDD0输入的电压;
所述第二调压控制输入端RS2,用于输入第二调压控制信号;
所述第二调压模块107,用于根据所述第二调压控制输入端RS2输入的所述第二调压控制信号,将所述工作电压输入端VDD0输入的电压进行升压或降压处理,为所述PFC逻辑缓冲电路104及所述PFC驱动电路105提供驱动输入电压;或者将所述工作电压输入端VDD0输入的电压直接输出至所述PFC逻辑缓冲电路104及所述PFC驱动电路105的驱动电压输入端,此时所述PFC逻辑缓冲电路104及所述PFC驱动电路105的驱动电压输入端的驱动电压等于所述工作电压输入端VDD0输入的电压。
本实施例中,所述第一调压模块106的输入端与所述工作电压输入端VDD0连接,所述第一调压模块106的控制端与所述第一调压控制输入端RS1连接,所述第一调压模块106的输出端分别与所述逆变逻辑缓冲电路101、上桥驱动电路102及下桥驱动电路103的驱动电压输入端连接;所述第二调压模块107的输入端与所述工作电压输入端VDD0连接,所述第二调压模块107的控制端与所述第二调压控制输入端RS2连接,所述第二调压模块107的输出端分别与所述PFC逻辑缓冲电路104及所述PFC驱动电路105的驱动电压输入端连接;本实施例中,所述逆变逻辑缓冲电路101的输出端分别与所述上桥驱动电路102的输入端和所述下桥驱动电路103的输入端连接,所述PFC逻辑缓冲电路104的输出端与所述PFC驱动电路105的输入端连接。图中IN1、IN2和IN3为本实施例智能功率模块的驱动IC电路100的上桥控制输入端,图中IN4、IN5和IN6为本实施例智能功率模块的驱动IC电路100的下桥控制输入端,图中IN7为本实施例智能功率模块的驱动IC电路100的PFC输入端,其中,IN1、IN2、IN3、IN4、IN5和IN6与所述逆变逻辑缓冲电路101连接,IN7与所述PFC逻辑缓冲电路连接。图中HO1为所述上桥驱动电路102的第一输出端,HO2为所述上桥驱动电路102的第二输出端,HO3为所述上桥驱动电路102的第三输出端,图中LO1为所述下桥驱动电路103的第一输出端,LO2为所述下桥驱动电路103的第二输出端,LO3为所述下桥驱动电路103的第三输出端,图中PFCO为所述PFC驱动电路105的输出端,其中,所述上桥驱动电路102的第一输出端HO1、所述上桥驱动电路102的第二输出端HO2及所述上桥驱动电路102的第三输出端HO3分别与所述智能功率模块内的相应上桥臂开关管(图未示)的控制端连接,所述下桥驱动电路103的第一输出端LO1、所述下桥驱动电路103的第二输出端LO2及所述下桥驱动电路103的第三输出端LO3分别与所述智能功率模块内的相应上桥臂开关管(图未示)的控制端连接,所述PFC驱动电路105的输出端PFCO与所述智能功率模块内的PFC开关管(图未示)的控制端连接。
图2为本申请智能功率模块的驱动IC电路第一实施例中所述第一调压模块的结构示意图,一并参照图1和图2,本实施例中,所述第一调压模块106包括第一升压模块1061、第一降压模块1062和第一模拟开关1063。其中,所述第一升压模块1061和所述第一降压模块1062的输入端与所述工作电压输入端VDD0连接,所述第一升压模块1061的输出端与所述第一模拟开关1063的第一输入端(对应所述第一模拟开关1063中标号为1的端)连接,所述第一降压模块1062的输出端与所述第一模拟开关1063的第二输入端(对应所述第一模拟开关1063中标号为2的端)连接,所述第一模拟开关1063的第三输入端(对应所述第一模拟开关1063中标号为0的端)直接与所述工作电压输入端VDD0连接,所述第一模拟开关1063的公共端分别与所述逆变逻辑缓冲电路101、上桥驱动电路102及下桥驱动电路103的驱动电压输入端连接,所述第一模拟开关1063的公共端的电压为VDD1,本实施例中,所述第一模拟开关1063的控制端与所述第一调压控制输入端RS1连接。
图3为本申请智能功率模块的驱动IC电路第一实施例中所述第二调压模块的结构示意图,一并参照图1和图3,本实施例中,所述第二调压模块107包括第二升压模块1071、第二降压模块1072和第二模拟开关1073,所述第二升压模块1071和所述第二降压模块1072的输入端与所述工作电压输入端VDD0连接,所述第二升压模块1071的输出端与所述第二模拟开关1073的第一输入端(对应所述第二模拟开关1073中标号为1的端)连接,所述第二降压模块1072的输出端与所述第二模拟开关1073的第二输入端(对应所述第二模拟开关1073中标号为2的端)连接,所述第二模拟开关1073的第三输入端(对应所述第二模拟开关1073中标号为0的端)直接与所述工作电压输入端VDD0连接,所述第二模拟开关1073的公共端分别与所述PFC逻辑缓冲电路104及所述PFC驱动电路105的驱动电压输入端连接,所述第二模拟开关1073的公共端的电压为VDD1,本实施例中,所述第二模拟开关1073的控制端与所述第二调压控制输入端RS2连接。本实施例中,所述工作电压输入端的电压为15V或20V。
本实施例智能功率模块的驱动IC电路100由于设置了所述第一调压模块106和所述第二调压模块107,用户可以根据智能功率模块内功率开关器件类型的不同(Si基功率开关器件或者SiC基功率开关器件),在所述第一调压控制输入端RS1和所述第二调压控制输入端RS2分别输入不同的调压控制信号,以使所述第一调压模块106和所述第二调压模块107对所述工作电压输入端VDD0输入的电压进行调节(升压或降压),从而得到适用于不同类型功率开关器件的驱动电压信号。具体地,本实施例中,所述第一调压模块106将所述工作电压输入端VDD0输入的电压调节为驱动电压VDD1,且将驱动电压VDD1输出至所述逆变逻辑缓冲电路101、所述上桥驱动电路102及所述下桥驱动电路103的驱动电压输入端;本实施例中,所述第二调压模块107将所述工作电压输入端VDD0输入的电压调节为驱动电压VDD2,且将驱动电压VDD2输出至所述PFC逻辑缓冲电路104和PFC驱动电路105的驱动电压输入端。本实施例中,所述第一调压模块106和所述第二调压模块107可以实现升压功能,也可以实现降压功能。
具体地,本实施例中,若所述工作电压输入端VDD0的电压为15V时,且所述智能功率模块中的上桥臂开关管和下桥臂开关管为Si基功率开关器件(如Si基IGBT管),所述智能功率模块中的PFC开关管为SiC基功率开关器件(如SiC基MOSFET管)时,则本实施例可以通过控制所述第一调压控制输入端RS1的第一调压控制信号,使所述第一调压模块106中的所述第一模拟开关1063打到标号为0的端,即使所述第一调压模块106直接输出15V驱动电压至所述逆变逻辑缓冲电路101、所述上桥驱动电路102和所述下桥驱动电路103的驱动电压输入端,进而为与所述上桥驱动电路102的输出端连接的上桥臂开关管(Si基功率开关器件)以及为与所述下桥驱动电路103的输出端连接的下桥臂开关管(Si基功率开关器件)提供15V的驱动电压;同时,本实施例还可以通过控制所述第二调压控制输入端RS2的第二调压控制信号,使所述第二调压模块107中的所述第二模拟开关1073打到标号为1的端,使得所述第二调压模块107中的第二升压模块1071对输入的15V电压进行升压处理,将15V的电压升压为适合于驱动所述PFC开关管(SiC基功率开关器件)工作的20V电压;
本实施例中,若所述工作电压输入端VDD0的电压为15V时,且所述智能功率模块中的上桥臂开关管、下桥臂开关管以及PFC开关管为Si基功率开关器件时,则本实施例可以通过控制所述第一调压控制输入端RS1的第一调压控制信号,使所述第一调压模块106中的所述第一模拟开关1063打到标号为0的端,同时,控制所述第二调压控制输入端RS2的第二调压控制信号,使所述第二调压模块107中的所述第二模拟开关1073也打到标号为0的端,即使所述第一调压模块106和所述第二调压模块107均输出15V的驱动电压,以驱动所述上桥臂开关管、所述下桥臂开关管以及所述PFC开关管工作;
本实施例中,若所述工作电压输入端VDD0的电压为15V时,且所述智能功率模块中的上桥臂开关管、下桥臂开关管以及PFC开关管为SiC基功率开关器件时,则本实施例可以通过控制所述第一调压控制输入端RS1的第一调压控制信号,使所述第一调压模块106中的所述第一模拟开关1063打到标号为1的端,同时,控制所述第二调压控制输入端RS2的第二调压控制信号,使所述第二调压模块107中的所述第二模拟开关1073也打到标号为1的端,即使所述第一调压模块106和所述第二调压模块107均对所述工作电压输入端VDD0输入的15V电压进行升压处理,以输出适用于驱动SiC基功率开关器件的20V的驱动电压;
本实施例中,若所述工作电压输入端VDD0的电压为20V时,且所述智能功率模块中的上桥臂开关管和下桥臂开关管为Si基功率开关器件(如Si基IGBT管),所述智能功率模块中的PFC开关管为SiC基功率开关器件(如SiC基MOSFET管)时,本实施例可以通过控制所述第一调压控制输入端RS1的第一调压控制信号,使所述第一调压模块106中的所述第一模拟开关1063打到标号为2的端,即使所述第一调压模块106中的所述第一降压模块1062对输入的20V电压进行降压处理,将20V电压降压为适合于驱动所述上桥臂开关管(Si基功率开关器件)和所述下桥臂开关管(Si基功率开关器件)工作的15V电压;同时,本实施例还可以通过控制所述第二调压控制输入端RS2的第二调压控制信号,使所述第二调压模块107中的所述第二模拟开关1073打到标号为0的端,即使所述第二调压模块107直接输出20V的驱动电压至所述PFC逻辑缓冲电路104和PFC驱动电路105的驱动电压输入端,进而为与所述PFC驱动电路105的输出端连接的所述PFC开关管(SiC基功率开关器件)提供20V的驱动电压;
本实施例中,若所述工作电压输入端VDD0的电压为20V时,且所述智能功率模块中的上桥臂开关管、下桥臂开关管及PFC开关管为Si基功率开关器件时,则本实施例可以通过控制所述第一调压控制输入端RS1的第一调压控制信号,使所述第一调压模块106中的所述第一模拟开关1063打到标号为2的端,同时,控制所述第二调压控制输入端RS2的第二调压控制信号,使所述第二调压模块107中的所述第二模拟开关1073也打到标号为2的端,即使所述第一调压模块106和所述第二调压模块107均对所述工作电压输入端VDD0输入的20V电压进行降压处理,以输出适用于驱动Si基功率开关器件的15V的驱动电压;
本实施例中,若所述工作电压输入端VDD0的电压为20V时,且所述智能功率模块中的上桥臂开关管、下桥臂开关管以及PFC开关管为SiC基功率开关器件时,则本实施例可以通过控制所述第一调压控制输入端RS1的第一调压控制信号,使所述第一调压模块106中的所述第一模拟开关1063打到标号为0的端,同时,控制所述第二调压控制输入端RS2的第二调压控制信号,使所述第二调压模块107中的所述第二模拟开关1073也打到标号为0的端,即使所述第一调压模块106和所述第二调压模块107输出适用于驱动SiC基功率开关器件的20V的驱动电压。
综上所述,本实施例智能功率模块的驱动IC电路100由于设置有所述第一调压模块106和所述第二调压模块107,且由于所述第一调压模块106和所述第二调压模块107均可以实现升压功能,也可以实现降压功能,并可以通过调节所述第一调压控制输入端RS1和所述第二调压控制输入端RS2的调压控制信号以实现不同驱动电压之间的切换,从而解决了现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题,即本实施例智能功率模块的驱动IC电路100即能适用于驱动传统的Si基功率开关器件,如Si基IGBT器件,也能适用于驱动SiC基功率开关器件,如SiC基MOSFET管等宽禁带功率开关器件,即本实施例智能功率模块的驱动IC电路100具有非常大的灵活性,同时也降低了电控设计的难度,非常适合于既需要用到传统Si基功率开关器件也需要用到SiC基功率开关器件的场合,有利于SiC基功率开关器件的性能发挥和及其应用的普及。
图4为本申请智能功率模块的驱动IC电路第二实施例的电路结构示意图,参照图4,本实施例中,该智能功率模块的驱动IC电路200包括工作电压输入端VDD0、逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104、PFC驱动电路105、调压控制输入端RS及调压模块108。
本实施例中,所述调压控制输入端RS,用于输入调压控制信号;
所述调压模块108,用于根据所述调压控制输入端RS所输入的调压控制信号,将所述工作电压输入端VDD0输入的电压进行调压处理,为所述逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104及PFC驱动电路105提供驱动输入电压;或者将所述工作电压输入端VDD0输入的电压直接输出至所述逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104及PFC驱动电路105的驱动电压输入端。
本实施例中,所述调压模块的输入端RS与所述工作电压输入端VDD0连接,所述调压模块108的控制端与所述调压控制输入端RS连接,所述调压模块108的输出端分别与所述逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104及PFC驱动电路105的驱动电压输入端连接;本实施例中,所述逆变逻辑缓冲电路101的输出端分别与所述上桥驱动电路102的输入端和所述下桥驱动电路103的输入端连接,所述PFC逻辑缓冲电路104的输出端还与所述PFC驱动电路105的输入端连接。图中IN1、IN2和IN3为本实施例智能功率模块的驱动IC电路200的上桥控制输入端,图中IN4、IN5和IN6为本实施例智能功率模块的驱动IC电路200的下桥控制输入端,图中IN7为本实施例智能功率模块的驱动IC电路200的PFC输入端,其中,IN1、IN2、IN3、IN4、IN5和IN6与所述逆变逻辑缓冲电路101连接,IN7与所述PFC逻辑缓冲电路连接。图中HO1为所述上桥驱动电路102的第一输出端,HO2为所述上桥驱动电路102的第二输出端,HO3为所述上桥驱动电路102的第三输出端,图中LO1为所述下桥驱动电路103的第一输出端,LO2为所述下桥驱动电路103的第二输出端,LO3为所述下桥驱动电路103的第三输出端,图中PFCO为所述PFC驱动电路105的输出端,其中,所述上桥驱动电路102的第一输出端HO1、所述上桥驱动电路102的第二输出端HO2及所述上桥驱动电路102的第三输出端HO3分别与所述智能功率模块内的相应上桥臂开关管(图未示)的控制端连接,所述下桥驱动电路103的第一输出端LO1、所述下桥驱动电路103的第二输出端LO2及所述下桥驱动电路103的第三输出端LO3分别与所述智能功率模块内的相应上桥臂开关管(图未示)的控制端连接,所述PFC驱动电路105的输出端PFCO与所述智能功率模块内的PFC开关管(图未示)的控制端连接。
图5为本申请智能功率模块的驱动IC电路第二实施例中所述调压模块一实施例的结构示意图,一并参照图4和图5,本实施例中,所述调压模块108包括降压模块1081和模拟开关1082,所述降压模块1081的输入端与所述工作电压输入端VDD0连接,所述降压模块108的输出端与所述模拟开关1082的第一输入端(对应所述模拟开关1082中标号为1的端)连接,所述模拟开关1082的第二输入端(对应所述模拟开关1082中标号为0的端)直接与所述工作电压输入端VDD0连接,所述模拟开关1082的公共端分别与所述逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104及PFC驱动电路105的驱动电压输入端连接,所述模拟开关1082的公共端的电压为VDD,所述模拟开关1082的控制端与所述调压控制输入端RS连接。本实施例中,所述工作电压输入端的电压为20V。
本实施例中,若所述工作电压输入端的电压为20V,且若所述智能功率模块中的上桥臂开关管、下桥臂开关管及PFC开关管为Si基功率开关器件时,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082打到标号为1的端,使所述调压模块108对所述工作电压输入端VDD0输入的20V电压进行降压处理,以输出适用于驱动Si基功率开关器件的15V的驱动电压;本实施例中,若所述智能功率模块中的上桥臂开关管、下桥臂开关管及PFC开关管为SiC基功率开关器件,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082打到标号为0的端,使所述调压模块108直接输出适用于驱动SiC基功率开关器件的20V的驱动电压。
图6为本申请智能功率模块的驱动IC电路第二实施例中所述调压模块另一实施例的结构示意图,一并参照图4和图6,本实施例中,所述调压模块108包括升压模块1081’和模拟开关1082’,所述升压模块1081’的输入端与所述工作电压输入端VDD0连接,所述升压模块1081’的输出端与所述模拟开关1082’的第一输入端(对应所述模拟开关1082’中标号为1的端)连接,所述模拟开关1082’的第二输入端(对应所述模拟开关1082’中标号为0的端)直接与所述工作电压输入端VDD0连接,所述模拟开关1082’的公共端分别与所述逆变逻辑缓冲电路101、上桥驱动电路102、下桥驱动电路103、PFC逻辑缓冲电路104及PFC驱动电路105的驱动电压输入端连接,所述模拟开关1082’的控制端与所述调压控制输入端RS连接。
本实施例中,若所述工作电压输入端的电压为15V,且若所述智能功率模块中的上桥臂开关管、下桥臂开关管及PFC开关管为Si基功率开关器件时,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082’打到标号为0的端,使所述调压模块108直接输出适用于驱动Si基功率开关器件的15V的驱动电压;本实施例中,若所述智能功率模块中的上桥臂开关管、下桥臂开关管及PFC开关管为SiC基功率开关器件时,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082打到标号为1的端,使所述调压模块108对所述工作电压输入端VDD0输入的15V电压进行升压处理,以输出适用于驱动SiC基功率开关器件的20V的驱动电压。
综上所述,本实施例智能功率模块的驱动IC电路200由于设置有所述调压模块108,且本实施例中所述调压模块108可以实现降压功能(对应于图5)或者升压功能(对应于图6),当所述智能功率模块内的上桥臂开关管、下桥臂开关管及PFC开关管都为Si基功率开关器件或者所述智能功率模块内的上桥臂开关管、下桥臂开关管及PFC开关管都为SiC基功率开关器件时,本实施例可以通过调节所述调压控制输入端RS的调压控制信号以实现不同驱动电压之间的切换,从而解决了现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题,即本实施例智能功率模块的驱动IC电路200即能适用于驱动传统的Si基功率开关器件,如Si基IGBT器件,也能适用于驱动SiC基功率开关器件,如SiC基MOSFET管等宽禁带功率开关器件,即本实施例智能功率模块的驱动IC电路200具有非常大的灵活性,同时也降低了电控设计的难度,本实施例智能功率模块的驱动IC电路200非常适合于所有开关管都采用传统Si基功率开关器件或所有开关管都采用SiC基功率开关器件的场合,有利于SiC基功率开关器件的性能发挥和及其应用的普及。
本申请还提供一种智能功率模块,图7为本申请智能功率模块第一实施例的结构示意图,参照图7,该智能功率模块300包括低压区供电电源输入端VCC、第一调压端CTR1、第二调压端CTR1、第一上桥臂控制输入端HIN1、第二上桥臂控制输入端HIN2、第三上桥臂控制输入端HIN3、第一下桥臂控制输入端LIN1、第二下桥臂控制输入端LIN2、第三下桥臂控制输入端LIN3、PFC控制输入端PFCIN、多个电阻(如图中的电阻R11、电阻R21、电阻R31电阻R41及电阻R42)、第一上桥臂开关管PD11、第二上桥臂开关(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)、PFC开关管PD31以及智能功率模块的驱动IC电路,本实施例中的所述智能功率模块的驱动IC电路为如上所述的智能功率模块的驱动IC电路100(即对应图1所示的智能功率模块的驱动IC电路100)。
一并参照图7和图1,本实施例中,所述低压区供电电源输入端VCC与所述智能功率模块的驱动IC电路100的工作电压输入端VDD0连接,所述第一调压端CTR1与所述智能功率模块的驱动IC电路100的第一调压控制输入端RS1连接,所述第二调压端CTR2与所述智能功率模块的驱动IC电路100的第二调压控制输入端RS2连接,所述第一上桥臂控制输入端HIN1与所述智能功率模块的驱动IC电路100的IN1端连接,第二上桥臂控制输入端HIN2与所述智能功率模块的驱动IC电路100的IN2端连接,所述第三上桥臂控制输入端HIN3与所述智能功率模块的驱动IC电路100的IN3端连接,所述第一下桥臂控制输入端LIN1与所述智能功率模块的驱动IC电路100的IN4端连接,所述第二下桥臂控制输入端LIN2与所述智能功率模块的驱动IC电路100的IN5端连接,所述第三下桥臂控制输入端LIN3与所述智能功率模块的驱动IC电路100的IN6端连接,所述PFC控制输入端PFCIN与所述智能功率模块的驱动IC电路100的IN7端连接,所述智能功率模块的驱动IC电路100中的上桥驱动电路102的第一输出端HO1经电阻R11与所述第一上桥臂开关管PD11的控制端连接,本实施例中,所述上桥驱动电路102的第二输出端HO2经一电阻(图未示)与所述第二上桥臂开关管(图未示)的控制端连接(图7中未示所述第二上桥臂开关管的连接结构,其连接结构与所述第一上桥臂开关管PD11的连接结构相同),所述上桥驱动电路102的第三输出端HO3经一电阻(图未示)与所述第三上桥臂开关管(图未示)的控制端连接(图7中未示所述第三上桥臂开关管的连接结构,其连接结构与所述第一上桥臂开关管PD11的连接结构相同);所述智能功率模块的驱动IC电路100中的下桥驱动电路103的第一输出端LO1经电阻R21与所述第一下桥臂开关管PD21的控制端连接,所述下桥驱动电路103的第二输出端LO2经一电阻(图未示)与所述第二下桥臂开关管(图未示)的控制端连接(图7中未示所述第二下桥臂开关管的连接结构,其连接结构与所述第一下桥臂开关管PD21的连接结构相同),所述下桥驱动电路103的第三输出端L03经一电阻(图未示)与所述第三下桥臂开关管(图未示)的控制端连接(图7中未示所述第三下桥臂开关管的连接结构,其连接结构与所述第一下桥臂开关管PD21的连接结构相同);所述PFC驱动电路105的输出端PFCO经电阻R31与所述PFC开关管PD31的控制端连接。本实施例中,所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为Si基IGBT管或SiC基MOSFET管。可选地,本实施例中,所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)为Si基IGBT管,所述PFC开关管PD31为SiC基MOSFET管。本实施例中,所述低压区供电电源输入端VCC的电压为15V或20V。
本实施例中,所述智能功率模块300还包括第一高压区供电电源输入端P1、第二高压区供电电源输入端P2、多个续流二极管(如图中的D11和D21),本实施例当所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)为Si基IGBT管,所述PFC开关管PD31为SiC基MOSFET管时,所述第一上桥臂开关管PD11的集电极、第二上桥臂开关管(图未示)的集电极及所述第三上桥臂开关管(图未示)的集电极与所述第一高压区供电电源输入端P1连接,所述第一上桥臂开关管PD11的发射极与所述第一下桥臂开关管PD21的集电极连接,所述第二上桥臂开关管(图未示)的发射极与所述第二下桥臂开关管(图未示)的集电极连接,所述第三上桥臂开关管(图未示)的发射极与所述第三下桥臂开关管(图未示)的集电极连接,所述第一下桥臂开关管PD21的发射极、所述第二下桥臂开关管(图未示)的发射极及所述第三下桥臂开关管(图未示)的发射极均经电阻R42接地。若本实施例中,所述PFC开关管PD31为SiC基NMOS管时,则所述PFC开关管PD31的漏极与所述第二高压区供电电源输入端P2连接,所述PFC开关管PD31的源极经电阻R41接地;续流二极管D11的阴极与所述第一上桥臂开关管PD11的集电极连接,续流二极管D11的阳极与所述第一上桥臂开关管PD11的发射极连接,续流二极管D21的阴极与所述第一下桥臂开关管PD21的集电极连接,续流二极管D21的阳极与所述第一下桥臂开关管PD21的发射极连接,同理,所述第二上桥臂开关管、所述第三上桥臂开关管、所述第二下桥臂开关管及所述第三下桥臂开关管的集电极与发射极之间也连接有一续流二极管(图未示);本实施例中,所述第一上桥臂开关管PD11与所述第一下桥臂开关管PD21的连接节点、所述第二上桥臂开关管与所述第二下桥臂开关管的连接节点以及所述第三上桥臂开关管与所述第三下桥臂开关管的连接节点与电机M连接。
本实施例智能功率模块300,由于智能功率模块的驱动IC电路100内设置有所述第一调压模块106和所述第二调压模块107,且由于所述第一调压模块106和所述第二调压模块107均可以实现升压功能,也可以实现降压功能,并可以通过调节所述第一调压控制输入端RS1和所述第二调压控制输入端RS2的调压控制信号以实现不同驱动电压之间的切换,从而解决了现有智能功率模块中的驱动IC不能直接驱动SiC基功率开关器件的问题,即本实施例智能功率模块的驱动IC电路100即能适用于驱动传统的Si基功率开关器件,如Si基IGBT器件,也能适用于驱动SiC基功率开关器件,如SiC基MOSFET管等宽禁带功率开关器件,即本实施例智能功率模块300具有非常大的灵活性,同时也降低了电控设计的难度,非常适合于既需要用到传统Si基功率开关器件也需要用到SiC基功率开关器件的场合,有利于SiC基功率开关器件的性能发挥和及其应用的普及。
图8为本申请智能功率模块第二实施例的结构示意图,参照图8,该智能功率模块400包括低压区供电电源输入端VCC、调压端CTR、第一上桥臂控制输入端HIN1、第二上桥臂控制输入端HIN2、第三上桥臂控制输入端HIN3、第一下桥臂控制输入端LIN1、第二下桥臂控制输入端LIN2、第三下桥臂控制输入端LIN3、PFC控制输入端PFCIN、多个电阻(如图中的电阻R11、电阻R21、电阻R31电阻R41及电阻R42)、第一上桥臂开关管PD11、第二上桥臂开关(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)、PFC开关管PD31以及智能功率模块的驱动IC电路,本实施例中的所述智能功率模块的驱动IC电路为如上所述的智能功率模块的驱动IC电路200(即对应图4所示的智能功率模块的驱动IC电路200)。
一并参照图8和图4,本实施例中,所述低压区供电电源输入端VCC与所述智能功率模块的驱动IC电路200的工作电压输入端VDD0连接,所述调压端CTR与所述智能功率模块的驱动IC电路200的调压控制输入端RS连接,本实施例中其它元器件的连接关系与上述智能功率模块300相同,此处不再赘述。
需要说明的是,本实施例中,所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为Si基IGBT管,或者所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为Si基IGBT管为SiC基MOSFET管。
本实施例中,若所述低压区供电电源输入端VCC的电压为15V时,所述智能功率模块的驱动IC电路200采用图6所示的所述调压模块108。具体地,当所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为Si基IGBT管时,本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082’打到标号为0的端,使所述调压模块108直接输出适用于驱动Si基功率开关器件的15V的驱动电压;本实施例中,当所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为SiC基功率开关器件时,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082打到标号为1的端,使所述调压模块108对所述工作电压输入端VDD0输入的15V电压进行升压处理,以输出适用于驱动SiC基功率开关器件的20V的驱动电压。
本实施例中,若所述低压区供电电源输入端VCC的电压为20V时,所述智能功率模块的驱动IC电路200采用图5所示的所述调压模块108。具体地,当所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为Si基功率开关器件时,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082打到标号为1的端,使所述调压模块108对所述工作电压输入端VDD0输入的20V电压进行降压处理,以输出适用于驱动Si基功率开关器件的15V的驱动电压;本实施例中,当所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31为SiC基功率开关器件时,则本实施例可以通过控制所述调压控制输入端RS的调压控制信号,使所述调压模块108中的所述模拟开关1082打到标号为0的端,使所述调压模块108直接输出适用于驱动SiC基功率开关器件的20V的驱动电压。
综上所述,本实施例智能功率模块400,由于所述智能功率模块的驱动IC电路200内设置有所述调压模块108,且本实施例中所述调压模块108可以实现降压功能(对应于图5)或者升压功能(对应于图6),当本实施例智能功率模块400内的所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31都为Si基功率开关器件或者所述第一上桥臂开关管PD11、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管PD21、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)及所述PFC开关管PD31都为SiC基功率开关器件时,本实施例可以通过调节所述调压控制输入端RS的调压控制信号以实现不同驱动电压之间的切换,从而解决了现有智能功率模块的驱动IC不能直接驱动SiC基功率开关器件的问题,即本实施例智能功率模块的驱动IC电路200即能适用于驱动传统的Si基功率开关器件,如Si基IGBT器件,也能适用于驱动SiC基功率开关器件,如SiC基MOSFET管等宽禁带功率开关器件,即本实施例智能功率模块400具有非常大的灵活性,同时也降低了电控设计的难度,本实施例智能功率模块400非常适合于所有开关管都采用传统Si基功率开关器件或所有开关管都采样SiC基功率开关器件的场合,有利于SiC基功率开关器件的性能发挥和及其应用的普及。
本申请提供一种智能功率模块的驱动IC电路500,用于进一步提高智能功率模块的集成度,以降低智能功率模块的成本和提高智能功率模块的可靠性。
图9为本申请智能功率模块的驱动IC电路一实施例的结构示意图,参照图9,本实施例中,该智能功率模块的驱动IC电路500包括第一上桥控制信号输入端HIN1、第二上桥控制信号输入端HIN2、第三上桥控制信号输入端HIN3、第四上桥控制信号输入端HIN4、第五上桥控制信号输入端HIN5、第六上桥控制信号输入端HIN6、第一下桥控制信号输入端LIN1、第二下桥控制信号输入端LIN2、第三下桥控制信号输入端LIN3、第四下桥控制信号输入端LIN4、第五下桥控制信号输入端LIN5、第六下桥控制信号输入端LIN6、PFC控制信号输入端PFCIN、逻辑输入缓冲电路501、第一上桥驱动电路502、第一下桥驱动电路503、第二上桥驱动电路504、第二下桥驱动电路505及PFC驱动电路506。
其中,所述逻辑输入缓冲电路501,用于对所述第一上桥控制信号输入端HIN1、第二上桥控制信号输入端HIN2及所述第三上桥控制信号输入端HIN3输入的控制信号进行整波滤波处理,并将行整波滤波处理后的控制信号输出至所述第一上桥驱动电路502;所述逻辑输入缓冲电路501对所述第一下桥控制信号输入端LIN1、第二下桥控制信号输入端LIN2及所述第三下桥控制信号输入端LIN3输入的控制信号进行整波滤波处理,并将整波滤波处理后的控制信号输出至所述第一下桥驱动电路503;所述逻辑输入缓冲电路501对所述第四上桥控制信号输入端HIN4、第五上桥控制信号输入端HIN5及所述第六上桥控制信号输入端HIN6输入的控制信号进行整波滤波处理,并将整波滤波处理后的控制信号输出至所述第二上桥驱动电路504;所述逻辑输入缓冲电路501对所述第四下桥控制信号输入端LIN4、第五下桥控制信号输入端LIN5及所述第六下桥控制信号输入端LIN6输入的控制信号进行整波滤波处理,并将整波滤波处理后的控制信号输出至所述第二下桥驱动电路505;所述逻辑输入缓冲电路501对所述PFC控制信号输入端PFCIN输入的控制信号进行整波滤波处理,并将整波滤波处理后的控制信号输出至所述PFC驱动电路506;
所述第一上桥驱动电路502,用于根据所述逻辑输入缓冲电路501输出的控制信号,驱动与外部第一电机(图未示)所对应的上桥臂开关管(图未示)的工作。需要说明的是,与外部第一电机所对应的上桥臂开关管包括3个开关管,因此,所述第一上桥驱动电路502的输出端包括第一输出端HO1、第二输出端HO2和第三输出端HO3;
所述第一下桥驱动电路503,用于根据所述逻辑输入缓冲电路501输出的控制信号,驱动与外部第一电机所对应的下桥臂开关管(图未示)的工作。需要说明的是,与外部第一电机所对应的下桥臂开关管也包括3个开关管,因此,所述第一下桥驱动电路503的输出端包括第一输出端LO1、第二输出端LO2和第三输出端LO3;
所述第二上桥驱动电路504,用于根据所述逻辑输入缓冲电路501输出的控制信号,驱动与外部第二电机(图未示)所对应的上桥臂开关管(图未示)的工作。需要说明的是,与外部第二电机所对应的上桥臂开关管包括3个开关管,因此,所述第二上桥驱动电路504的输出端包括第一输出端HO4、第二输出端HO5和第三输出端HO6;
所述第二下桥驱动电路505,用于根据所述逻辑输入缓冲电路501输出的控制信号,驱动与外部第二电机所对应的下桥臂开关管的(图未示)工作。需要说明的是,与外部第二电机所对应的下桥臂开关管也包括3个开关管,因此,所述第二下桥驱动电路505的输出端包括第一输出端LO4、第二输出端LO5和第三输出端LO6;
所述PFC驱动电路506,用于根据所述逻辑输入缓冲电路501输出的控制信号,驱动外部PFC开关管(图未示)的工作,所述PFC驱动电路506的输出端为PFCO。
进一步地,本实施例智能功率模块的驱动IC电路500还包括使能端EN、错误信号输出端FAULT、复位端RS、保护电路507、错误判断逻辑电路508及驱动逻辑电路509。所述驱动IC电路500在复位端RS输入复位信号时进行复位。
具体地,所述保护电路507,用于在本实施例智能功率模块的驱动IC电路500的低压侧供电电源输入端VDD(即驱动电压输入端口)出现欠压时输出第一欠压保护信号至所述错误判断逻辑电路508、当上述各所述开关管中的任一开关管发生过流时输出过流保护信号至所述错误判断逻辑电路508、以及当所述智能功率模块发生过温时输出过温保护信号至所述错误判断逻辑电路508;
所述错误判断逻辑电路508,用于在接收到所述第一欠压保护信号、所述过流保护信号或/和所述过温保护信号时,输出错误信号至所述错误信号输出端FUALT;
所述驱动逻辑电路509,用于在所述错误判断逻辑电路508未输出所述错误信号且所述使能端EN输入使能信号时,输出开启信号至所述逻辑输入缓冲电路501,以控制所述第一上桥驱动电路502、所述第一下桥驱动电路503、所述第二上桥驱动电路504、所述第二下桥驱动电路505及所述PFC驱动电路506开始工作。
进一步地,本实施例中,所述保护电路507包括低压侧欠压保护电路5071、过流保护电路5072及过温保护电路5073。
其中,所述低压侧欠压保护电路5071,用于在本实施例智能功率模块的驱动IC电路500的低压侧供电电源输入端VDD出现欠压时输出第一欠压保护信号至所述错误判断逻辑电路508;
所述过流保护电路5072,用于当上述各所述开关管中的任一开关管发生过流时输出过流保护信号至所述错误判断逻辑电路508;
所述过温保护电路5073,用于当所述智能功率模块发生过温时输出过温保护信号至所述错误判断逻辑电路508。
进一步地,本实施例智能功率模块的驱动IC电路500还包括高压侧欠压保护电路510,所述高压侧欠压保护电路510用于在本实施例智能功率模块的驱动IC电路500的高压侧供电电源输入端(图未示)出现欠压时输出第二欠压保护信号至所述逻辑输入缓冲电路501,以控制所述第一上桥驱动电路502、第一下桥驱动电路503、第二上桥驱动电路504、第二下桥驱动电路505及PFC驱动电路506停止工作。
本实施例智能功率模块的驱动IC电路500由于将用于驱动与外部第一电机所对应的上桥臂开关管工作的所述第一上桥驱动电路502、用于驱动与外部第一电机所对应的下桥臂开关管工作的所述第一下桥驱动电路503、用于驱动与外部第二电机所对应的上桥臂开关管工作的所述第二上桥驱动电路504、用于驱动与外部第二电机所对应的下桥臂开关管工作的所述第二下桥驱动电路505、以及所述PFC驱动电路506都集成于同一个IC芯片中,使得本实施例智能功率模块的驱动IC电路500相对于现有技术中智能功率模块的驱动IC电路,进一步地提高了智能功率模块的集成度,从而降低了智能功率模块的成本,同时也提高了智能功率模块的可靠性。
本申请还提供一种智能功率模块,图10为本申请智能功率模块一实施例的结构示意图,一并参照图9和图10,该智能功率模块600包括PFC开关管Q5、多个电阻(如电阻R1、电阻R2、电阻R3、电阻R4、电阻R5)、与外部第一电机M1所对应第一上桥臂开关管Q1、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管Q2、第二下桥臂开关管(图未示)和第三下桥臂开关管(图未示)、与外部第二电机所对应第四上桥臂开关管Q3、第五上桥臂开关管(图未示)、第六上桥臂开关管(图未示)、第四下桥臂开关管Q4、第五下桥臂开关管(图未示)和第六下桥臂开关管(图未示)、以及如上所述的智能功率模块的驱动IC电路500(即图9所示的智能功率模块的驱动IC电路500)。
具体地,本实施例中,所述驱动IC电路500中的第一上桥驱动电路502的第一输出端HO1经所述电阻R1与所述第一上桥臂开关管Q1的控制端连接,所述第一上桥驱动电路502的第二输出端HO2经一电阻(图未示)与所述第二上桥臂开关管(图未示)的控制端连接(即图10中未示所述第二上桥臂开关管的连接结构,其连接结构与所述第一上桥臂开关管Q1的连接结构相同),所述第一上桥驱动电路502的第三输出端HO3经一电阻(图未示)与所述第三上桥臂开关管(图未示)的控制端连接(即图10中未示所述第三上桥臂开关管的连接结构,其连接结构与所述第一上桥臂开关管Q1的连接结构相同);所述驱动IC电路500中的第一下桥驱动电路503的第一输出端LO1经电阻R2与所述第一下桥臂开关管Q2的控制端连接,所述第一下桥驱动电路503的第二输出端LO2经一电阻(图未示)与所述第二下桥臂开关管(图未示)的控制端连接(即图10中未示所述第二下桥臂开关管的连接结构,其连接结构与所述第一下桥臂开关管Q2的连接结构相同),所述第一下桥驱动电路503的第三输出端LO3经一电阻(图未示)与所述第三下桥臂开关管(图未示)的控制端连接(即图10中未示所述第三下桥臂开关管的连接结构,其连接结构与所述第一下桥臂开关管Q2的连接结构相同);
所述驱动IC电路500中的第二上桥驱动电路504的第一输出端HO4经电阻R3与所述第四上桥臂开关管Q3的控制端连接,所述第二上桥驱动电路504的第二输出端HO5经一电阻(图未示)与所述第五上桥臂开关管(图未示)的控制端连接(即图10中未示所述第五上桥臂开关管的连接结构,其连接结构与所述第四上桥臂开关管Q3的连接结构相同),所述第二上桥驱动电路504的第三输出端HO6经一电阻(图未示)与所述第六上桥臂开关管(图未示)的控制端连接(即图10中未示所述第六上桥臂开关管的连接结构,其连接结构与所述第四上桥臂开关管Q3的连接结构相同);所述驱动IC电路500中的第二下桥驱动电路505的第一输出端LO4经电阻R4与所述第四下桥臂开关管Q4的控制端连接,所述第二下桥驱动电路505的第二输出端LO5经一电阻(图未示)与所述第五下桥臂开关管(图未示)的控制端连接(即图10中未示所述第五下桥臂开关管的连接结构,其连接结构与所述第四下桥臂开关管Q4的连接结构相同),所述第二下桥驱动电路505的第三输出端LO6经一电阻(图未示)与所述第六下桥臂开关管(图未示)的控制端连接(即图10中未示所述第六下桥臂开关管的连接结构,其连接结构与所述第四下桥臂开关管Q4的连接结构相同);本实施例中,所述驱动IC电路500中的PFC驱动电路506的输出端PFCO经一电阻R5与所述PFC开关管Q5的控制端连接。本实施例中,所述驱动IC电路500的低压侧供电电源输入端VDD为外部第一电机M1、外部第二电机M2以及所述PFC驱动电路506提供驱动电压。
本实施例智能功率模块600还包括第一电流采样电阻R6、第二电流采样电阻R7及第三电流采样电阻R8。其中,所述第一电流采样电阻R6的第一端与所述PFC开关管Q5的电流输出端连接,所述第一电流采样电阻R6的第二端接地;所述第二电流采样电阻R7的第一端分别与所述第一下桥臂开关管Q2、所述第二下桥臂开关管(图未示)及所述第三下桥臂开关管(图未示)的电流输出端连接,所述第二电流采样电阻R7的第二端接地;所述第三电流采样电阻R8的第一端分别与所述第四下桥臂开关管Q4、所述第五下桥臂开关管(图未示)及所述第六下桥臂开关管(图未示)的电流输出端连接,所述第三电流采样电阻R8的第二端接地。本实施例中,所述第一电流采样电阻R6的第一端还与所述驱动IC电路500中的所述过流保护电路5072的第一输入端连接,所述第二电流采样电阻R7的第一端还与所述驱动IC电路500中的所述过流保护电路5072的第二输入端连接,所述第三电流采样电阻R8的第一端还与所述驱动IC电路500中的所述过流保护电路5072的第三输入端连接。
本实施例智能功率模块600还包括用于检测本实施例智能功率模块600的温度的温度检测电路601,所述温度检测电路601与所述驱动IC电路500中的所述过温保护电路5073的输入端连接。
本实施例中,所述PFC开关管Q5、第一上桥臂开关管Q1、第二上桥臂开关管(图未示)、第三上桥臂开关管(图未示)、第一下桥臂开关管Q2、第二下桥臂开关管(图未示)、第三下桥臂开关管(图未示)、第四上桥臂开关管Q3、第五上桥臂开关管(图未示)、第六上桥臂开关管(图未示)、第四下桥臂开关管Q4、第五下桥臂开关管(图未示)和所述第六下桥臂开关管(图未示)为IGBT管。
本实施例智能功率模块600还包括第一高压区供电电源输入端P1、第二高压区供电电源输入端P2、多个续流二极管(如续流二极管FRD1、续流二极管FRD2、续流二极管FRD3、续流二极管FRD4和续流二极管FRD5)、PFC信号输出端PFCOUT及第一二极管D1。具体地,本实施例中,所述第一上桥臂开关管Q1的集电极、第二上桥臂开关管(图未示)的集电极、所述第三上桥臂开关管(图未示)的集电极、第四上桥臂开关管Q3的集电极、第五上桥臂开关管(图未示)的集电极、所述第六上桥臂开关管(图未示)的集电极与所述第一高压区供电电源输入端P1连接,所述第一上桥臂开关管Q1的发射极与所述第一下桥臂开关管Q2的集电极连接,所述第二上桥臂开关管(图未示)的发射极与所述第二下桥臂开关管(图未示)的集电极连接,所述第三上桥臂开关管(图未示)的发射极与所述第三下桥臂开关管(图未示)的集电极连接,所述第四上桥臂开关管Q3的发射极与所述第四下桥臂开关管Q4的集电极连接,所述第五上桥臂开关管(图未示)的发射极与所述第五下桥臂开关管(图未示)的集电极连接,所述第六上桥臂开关管(图未示)的发射极与所述第六下桥臂开关管(图未示)的集电极连接;所述第一下桥臂开关管Q2的发射极、所述第二下桥臂开关管(图未示)的发射极及所述第三下桥臂开关管(图未示)的发射极与所述第二电流采样电阻R7的第一端连接,所述第四下桥臂开关管Q4的发射极、所述第五下桥臂开关管(图未示)的发射极及所述第六下桥臂开关管(图未示)的发射极与所述第三电流采样电阻R8的第一端连接;所述PFC开关管Q5的集电极分别与所述PFC信号输出端PFCOUT及所述第一二极管D1的阳极连接,所述第一二极管D1的阴极与所述第二高压区供电电源输入端P2连接,所述PFC开关管Q5的发射极与所述第一电流采样电阻R6的第一端连接。
本实施例中,续流二极管FRD1的阴极与所述第一上桥臂开关管Q1的集电极连接,续流二极管FRD1的阳极与所述第一上桥臂开关管Q1的发射极连接,续流二极管FRD2的阴极与所述第一下桥臂开关管Q2的集电极连接,续流二极管FRD2的阳极与所述第一下桥臂开关管Q2的发射极连接,续流二极管FRD3的阴极与所述第四上桥臂开关管Q3的集电极连接,续流二极管FRD3的阳极与所述第四上桥臂开关管Q3的发射极连接,续流二极管FRD4的阴极与所述第四下桥臂开关管Q4的集电极连接,续流二极管FRD4的阳极与所述第四下桥臂开关管Q4的发射极连接,同理,其它各开关管的集电极与发射极之间均连接有一续流二极管(图未示),此处不再赘述。
本实施例中,所述第一上桥臂开关管Q1与所述第一下桥臂开关管Q2的连接节点、所述第二上桥臂开关管与所述第二下桥臂开关管的连接节点以及所述第三上桥臂开关管与所述第三下桥臂开关管的连接节点与外部第一电机M1连接,所述第四上桥臂开关管Q3与所述第四下桥臂开关管Q4的连接节点、所述第五上桥臂开关管与所述第五下桥臂开关管的连接节点以及所述第六上桥臂开关管与所述第六下桥臂开关管的连接节点与外部第二电机M2连接。当本实施例智能功率模块600应用于空调器(如变频空调器)时,所述第一电机M1可以为空调器的风机,所述第二电机M2可以为空调器的压缩机。
本实施例智能功率模块600由于其内部的所述驱动IC电路500将第一上桥驱动电路502、所述第一下桥驱动电路503、所述第二上桥驱动电路504、所述第二下桥驱动电路505以及所述PFC驱动电路506都集成于同一个IC芯片中,使得本实施例智能功率模块600相对于现有技术中智能功率模块,进一步地提高了智能功率模块的集成度,从而降低了智能功率模块的成本。并且,本实施例智能功率模块600对外部第一电机M1、外部第二电机M2和PFC开关管Q5等共用一套保护电路507,具体地,本实施例当所述驱动IC电路500的低压侧供电电源输入端VDD出现欠压时,所述保护电路507中的所述低压侧欠压保护电路5071将输出第一欠压保护信号至所述错误判断逻辑电路508,本实施例当上述各所述开关管中的任一开关管发生过流时,所述保护电路507中的所述过流保护电路5072将输出过流保护信号至所述错误判断逻辑电路508,当本实施例智能功率模块600的温度过高时,所述保护电路507中的所述过温保护电路5073将输出过温保护信号至所述错误判断逻辑电路508,所述错误判断逻辑电路508在接收到所述第一欠压保护信号、所述过流保护信号或/和所述过温保护信号时,则输出错误信号至所述错误信号输出端FUALT,所述错误信号输出端FUALT与外部控制器(图未示)连接,当外部控制器接收到所述错误信号时,外部控制器则输出相应控制信号至所述驱动IC电路500,以控制所述第一上桥驱动电路502、所述第一下桥驱动电路503、所述第二上桥驱动电路504、所述第二下桥驱动电路505及所述PFC驱动电路506停止工作,进而控制第一电机M1、第二电机M2及所述PFC开关管Q5停止工作。同理,本实施例当所述驱动IC电路500的高压侧供电电源输入端(图未示)出现欠压时,所述高压侧欠压保护电路510将输出第二欠压保护信号至所述逻辑输入缓冲电路501,以控制所述第一上桥驱动电路502、第一下桥驱动电路503、第二上桥驱动电路504、第二下桥驱动电路505及PFC驱动电路506停止工作。即本实施例能够有效地防止分离器件中一方出问题而导致其他模块继续工作的情况,从而可以更好地保护本实施例智能功率模块600,提高了智能功率模块600的可靠性。
综上所述,本实施例智能功率模块600采用了高集成的所述驱动IC电路500,并且本实施例智能功率模块600共用一套保护电路507,简化了高集成智能功率模块(也称高集成IPM)的内部结构,极大地提高了智能功率模块的集成度和可靠性,同时也降低了成本,减小了体积;本实施例智能功率模块600还降低了智能功率模块内部布线难度。本实施例智能功率模块600具有结构简单合理、操作灵活、成本低、高集成度、可靠性高及适用范围广的优点。
本申请还提供一种空调器,该空调器包括智能功率模块,该智能功率模块的结构可参照上述实施例,在此不再赘述。理所应当地,由于本实施例的空调器采用了上述智能功率模块的技术方案,因此该空调器具有上述智能功率模块所有的有益效果。
以上仅为本申请的优选实施例,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。

Claims (18)

  1. 一种智能功率模块的驱动IC电路,其中,所述驱动IC电路包括工作电压输入端、逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路、PFC驱动电路、第一调压控制输入端、第二调压控制输入端、第一调压模块和第二调压模块;其中:
    所述第一调压控制输入端,用于输入第一调压控制信号;
    所述第一调压模块,用于根据所述第一调压控制信号,将所述工作电压输入端输入的电压进行升压或降压处理,为所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路提供驱动输入电压;或者将所述工作电压输入端输入的电压直接输出至所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路的驱动电压输入端;
    所述第二调压控制输入端,用于输入第二调压控制信号;
    所述第二调压模块,用于根据所述第二调压控制信号,将所述工作电压输入端输入的电压进行升压或降压处理,为所述PFC逻辑缓冲电路及所述PFC驱动电路提供驱动输入电压;或者将所述工作电压输入端输入的电压直接输出至所述PFC逻辑缓冲电路及所述PFC驱动电路的驱动电压输入端。
  2. 如权利要求1所述的智能功率模块的驱动IC电路,其中,所述第一调压模块的输入端与所述工作电压输入端连接,所述第一调压模块的控制端与所述第一调压控制输入端连接,所述第一调压模块的输出端分别与所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路的驱动电压输入端连接;所述第二调压模块的输入端与所述工作电压输入端连接,所述第二调压模块的控制端与所述第二调压控制输入端连接,所述第二调压模块的输出端分别与所述PFC逻辑缓冲电路及所述PFC驱动电路的驱动电压输入端连接;所述逆变逻辑缓冲电路的输出端分别与所述上桥驱动电路的输入端和所述下桥驱动电路的输入端连接,所述PFC逻辑缓冲电路的输出端与所述PFC驱动电路的输入端连接。
  3. 如权利要求1所述的智能功率模块的驱动IC电路,其中,所述第一调压模块包括第一升压模块、第一降压模块和第一模拟开关,所述第一升压模块和所述第一降压模块的输入端与所述工作电压输入端连接,所述第一升压模块的输出端与所述第一模拟开关的第一输入端连接,所述第一降压模块的输出端与所述第一模拟开关的第二输入端连接,所述第一模拟开关的第三输入端直接与所述工作电压输入端连接,所述第一模拟开关的公共端分别与所述逆变逻辑缓冲电路、上桥驱动电路及下桥驱动电路的驱动电压输入端连接,所述第一模拟开关的控制端与所述第一调压控制输入端连接。
  4. 如权利要求1所述的智能功率模块的驱动IC电路,其中,所述第二调压模块包括第二升压模块、第二降压模块和第二模拟开关,所述第二升压模块和所述第二降压模块的输入端与所述工作电压输入端连接,所述第二升压模块的输出端与所述第二模拟开关的第一输入端连接,所述第二降压模块的输出端与所述第二模拟开关的第二输入端连接,所述第二模拟开关的第三输入端直接与所述工作电压输入端连接,所述第二模拟开关的公共端分别与所述PFC逻辑缓冲电路及所述PFC驱动电路的驱动电压输入端连接,所述第二模拟开关的控制端与所述第二调压控制输入端连接。
  5. 一种智能功率模块的驱动IC电路,其中,所述驱动IC电路包括工作电压输入端、逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路、PFC驱动电路、调压控制输入端及调压模块;其中:
    所述调压控制输入端,用于输入调压控制信号;
    所述调压模块,用于根据所述调压控制输入端所输入的调压控制信号,将所述工作电压输入端输入的电压进行调压处理,为所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路提供驱动输入电压;或者将所述工作电压输入端输入的电压直接输出至所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端。
  6. 如权利要求5所述的智能功率模块的驱动IC电路,其中,所述调压模块的输入端与所述工作电压输入端连接,所述调压模块的控制端与所述调压控制输入端连接,所述调压模块的输出端分别与所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端连接;所述逆变逻辑缓冲电路的输出端分别与所述上桥驱动电路的输入端和所述下桥驱动电路的输入端连接,所述PFC逻辑缓冲电路的输出端还与所述PFC驱动电路的输入端连接。
    或者,所述调压模块包括降压模块和模拟开关,所述降压模块的输入端与所述工作电压输入端连接,所述降压模块的输出端与所述模拟开关的第一输入端连接,所述模拟开关的第二输入端直接与所述工作电压输入端连接,所述模拟开关的公共端分别与所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端连接,所述模拟开关的控制端与所述调压控制输入端连接。
    或者,所述调压模块包括升压模块和模拟开关,所述升压模块的输入端与所述工作电压输入端连接,所述升压模块的输出端与所述模拟开关的第一输入端连接,所述模拟开关的第二输入端直接与所述工作电压输入端连接,所述模拟开关的公共端分别与所述逆变逻辑缓冲电路、上桥驱动电路、下桥驱动电路、PFC逻辑缓冲电路及PFC驱动电路的驱动电压输入端连接,所述模拟开关的控制端与所述调压控制输入端连接。
  7. 一种智能功率模块,其中,所述智能功率模块包括低压区供电电源输入端、第一调压端、第二调压端、上桥臂控制输入端、下桥臂控制输入端、PFC控制输入端、多个电阻、第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管、PFC开关管、以及权利要求1所述的智能功率模块的驱动IC电路;其中:
    所述低压区供电电源输入端与所述驱动IC电路的工作电压输入端连接,所述第一调压端与所述驱动IC电路的第一调压控制输入端连接,所述第二调压端与所述驱动IC电路的第二调压控制输入端连接,所述上桥臂控制输入端与所述驱动IC电路的上桥控制输入端连接,所述下桥臂控制输入端与所述驱动IC电路的下桥控制输入端连接,所述PFC控制输入端与所述驱动IC电路的PFC控制输入端连接;所述驱动IC电路中的上桥驱动电路的第一输出端经一所述电阻与所述第一上桥臂开关管的控制端连接,所述上桥驱动电路的第二输出端经一所述电阻与所述第二上桥臂开关管的控制端连接,所述上桥驱动电路的第三输出端经一所述电阻与所述第三上桥臂开关管的控制端连接;所述驱动IC电路中的下桥驱动电路的第一输出端经一所述电阻与所述第一下桥臂开关管的控制端连接,所述下桥驱动电路的第二输出端经一所述电阻与所述第二下桥臂开关管的控制端连接,所述下桥驱动电路的第三输出端经一所述电阻与所述第三下桥臂开关管的控制端连接;所述驱动IC电路中的PFC驱动电路的输出端经一所述电阻与所述PFC开关管的控制端连接;
    所述第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管及所述PFC开关管为Si基IGBT管或SiC基MOSFET管。
  8. 一种智能功率模块,其中,所述智能功率模块包括低压区供电电源输入端、调压端、上桥臂控制输入端、下桥臂控制输入端、PFC控制输入端、多个电阻、第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管、PFC开关管、以及权利要求5所述的智能功率模块的驱动IC电路;其中:
    所述低压区供电电源输入端与所述驱动IC电路的工作电压输入端连接,所述调压端与所述驱动IC电路的调压控制输入端连接,所述上桥臂控制输入端与所述驱动IC电路的上桥控制输入端连接,所述下桥臂控制输入端与所述驱动IC电路的下桥控制输入端连接,所述PFC控制输入端与所述驱动IC电路的PFC输入端连接;所述驱动IC电路中的上桥驱动电路的第一输出端经一所述电阻与所述第一上桥臂开关管的控制端连接,所述上桥驱动电路的第二输出端经一所述电阻与所述第二上桥臂开关管的控制端连接,所述上桥驱动电路的第三输出端经一所述电阻与所述第三上桥臂开关管的控制端连接;所述驱动IC电路中的下桥驱动电路的第一输出端经一所述电阻与所述第一下桥臂开关管的控制端连接,所述下桥驱动电路的第二输出端经一所述电阻与所述第二下桥臂开关管的控制端连接,所述下桥驱动电路的第三输出端经一所述电阻与所述第三下桥臂开关管的控制端连接;所述驱动IC电路中的PFC驱动电路的输出端经一所述电阻与所述PFC开关管的控制端连接;
    所述第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管及所述PFC开关管为Si基IGBT管,或者所述第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管及所述PFC开关管为SiC基MOSFET管。
  9. 一种智能功率模块的驱动IC电路,其中,所述驱动IC电路包括上桥控制信号输入端、下桥控制信号输入端、PFC控制信号输入端、逻辑输入缓冲电路、第一上桥驱动电路、第二上桥驱动电路、第一下桥驱动电路、第二下桥驱动电路及PFC驱动电路;其中:
    所述逻辑输入缓冲电路,用于对所述上桥控制信号输入端、下桥控制信号输入端及PFC控制信号输入端输入的控制信号进行整波滤波处理,并将行整波滤波处理后的控制信号对应输出至所述第一上桥驱动电路、第二上桥驱动电路、第一下桥驱动电路、第二下桥驱动电路及所述PFC驱动电路;
    所述第一上桥驱动电路,用于根据所述逻辑输入缓冲电路输出的控制信号,驱动与外部第一电机所对应的上桥臂开关管的工作;
    所述第一下桥驱动电路,用于根据所述逻辑输入缓冲电路输出的控制信号,驱动与外部第一电机所对应的下桥臂开关管的工作;
    所述第二上桥驱动电路,用于根据所述逻辑输入缓冲电路输出的控制信号,驱动与外部第二电机所对应的上桥臂开关管的工作;
    所述第二下桥驱动电路,用于根据所述逻辑输入缓冲电路输出的控制信号,驱动与外部第二电机所对应的下桥臂开关管的工作;
    所述PFC驱动电路,用于根据所述逻辑输入缓冲电路输出的控制信号,驱动外部PFC开关管的工作。
  10. 如权利要求9所述的智能功率模块的驱动IC电路,其中,所述驱动IC电路还包括使能端、错误信号输出端、保护电路、错误判断逻辑电路及驱动逻辑电路;其中:
    所述保护电路,用于在所述驱动IC电路的低压侧供电电源输入端出现欠压时输出第一欠压保护信号至所述错误判断逻辑电路、当各所述开关管中的任一开关管发生过流时输出过流保护信号至所述错误判断逻辑电路、以及当所述智能功率模块发生过温时输出过温保护信号至所述错误判断逻辑电路;
    所述错误判断逻辑电路,用于在接收到所述第一欠压保护信号、所述过流保护信号或/和所述过温保护信号时,输出错误信号至所述错误信号输出端;
    所述驱动逻辑电路,用于在所述错误判断逻辑电路未输出所述错误信号且所述使能端输入使能信号时,输出开启信号至所述逻辑输入缓冲电路,以控制所述第一上桥驱动电路、第二上桥驱动电路、第一下桥驱动电路、第二下桥驱动电路及PFC驱动电路开始工作。
  11. 如权利要求9所述的智能功率模块的驱动IC电路,其中,所述保护电路包括低压侧欠压保护电路、过流保护电路及过温保护电路;其中:
    所述低压侧欠压保护电路,用于在所述驱动IC电路的低压侧供电电源输入端出现欠压时输出第一欠压保护信号至所述错误判断逻辑电路;
    所述过流保护电路,用于当各所述开关管中的任一开关管发生过流时输出过流保护信号至所述错误判断逻辑电路;
    所述过温保护电路,用于当所述智能功率模块发生过温时输出过温保护信号至所述错误判断逻辑电路。
  12. 如权利要求9所述的智能功率模块的驱动IC电路,其中,所述驱动IC电路还包括:
    高压侧欠压保护电路,用于在所述驱动IC电路的高压侧供电电源输入端出现欠压时输出第二欠压保护信号至所述逻辑输入缓冲电路,以控制所述第一上桥驱动电路、第二上桥驱动电路、第一下桥驱动电路、第二下桥驱动电路及PFC驱动电路停止工作。
  13. 一种智能功率模块,其中,所述智能功率模块包括PFC开关管、多个电阻、与外部第一电机所对应第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管和第三下桥臂开关管、与外部第二电机所对应第四上桥臂开关管、第五上桥臂开关管、第六上桥臂开关管、第四下桥臂开关管、第五下桥臂开关管和第六下桥臂开关管、以及权利要求9所述的智能功率模块的驱动IC电路;其中:
    所述驱动IC电路中的第一上桥驱动电路的第一输出端经一所述电阻与所述第一上桥臂开关管的控制端连接,所述第一上桥驱动电路的第二输出端经一所述电阻与所述第二上桥臂开关管的控制端连接,所述第一上桥驱动电路的第三输出端经一所述电阻与所述第三上桥臂开关管的控制端连接;所述驱动IC电路中的第一下桥驱动电路的第一输出端经一所述电阻与所述第一下桥臂开关管的控制端连接,所述第一下桥驱动电路的第二输出端经一所述电阻与所述第二下桥臂开关管的控制端连接,所述第一下桥驱动电路的第三输出端经一所述电阻与所述第三下桥臂开关管的控制端连接;
    所述驱动IC电路中的第二上桥驱动电路的第一输出端经一所述电阻与所述第四上桥臂开关管的控制端连接,所述第二上桥驱动电路的第二输出端经一所述电阻与所述第五上桥臂开关管的控制端连接,所述第二上桥驱动电路的第三输出端经一所述电阻与所述第六上桥臂开关管的控制端连接;所述驱动IC电路中的第二下桥驱动电路的第一输出端经一所述电阻与所述第四下桥臂开关管的控制端连接,所述第二下桥驱动电路的第二输出端经一所述电阻与所述第五下桥臂开关管的控制端连接,所述第二下桥驱动电路的第三输出端经一所述电阻与所述第六下桥臂开关管的控制端连接;
    所述驱动IC电路中的PFC驱动电路的输出端经一所述电阻与所述PFC开关管的控制端连接。
  14. 如权利要求13所述的智能功率模块,其中,所述智能功率模块还包括第一电流采样电阻、第二电流采样电阻及第三电流采样电阻;其中:
    所述第一电流采样电阻的第一端与所述PFC开关管的电流输出端连接,所述第二电流采样电阻的第一端分别与所述第一下桥臂开关管、所述第二下桥臂开关管及所述第三下桥臂开关管的电流输出端连接,所述第三电流采样电阻的第一端分别与所述第四下桥臂开关管、所述第五下桥臂开关管及所述第六下桥臂开关管的电流输出端连接,所述第一电流采样电阻的第二端、所述第二电流采样电阻的第二端及所述第三电流采样电阻的第二端接地;所述第一电流采样电阻的第一端还与所述驱动IC电路中的所述过流保护电路的第一输入端连接,所述第二电流采样电阻的第一端还与所述驱动IC电路中的所述过流保护电路的第二输入端连接,所述第三电流采样电阻的第一端还与所述驱动IC电路中的所述过流保护电路的第三输入端连接。
  15. 如权利要求14所述的智能功率模块,其中,所述智能功率模块还包括用于检测所述智能功率模块的温度的温度检测电路,所述温度检测电路与所述驱动IC电路中的所述过温保护电路的输入端连接。
  16. 如权利要求13所述的智能功率模块,其中,所述PFC开关管、第一上桥臂开关管、第二上桥臂开关管、第三上桥臂开关管、第一下桥臂开关管、第二下桥臂开关管、第三下桥臂开关管、第四上桥臂开关管、第五上桥臂开关管、第六上桥臂开关管、第四下桥臂开关管、第五下桥臂开关管和所述第六下桥臂开关管为IGBT管。
  17. 如权利要求16所述的智能功率模块,其中,所述智能功率模块还包括第一高压区供电电源输入端、第二高压区供电电源输入端、多个续流二极管、PFC信号输出端及第一二极管;其中:
    所述第一上桥臂开关管的集电极、第二上桥臂开关管的集电极、所述第三上桥臂开关管的集电极、第四上桥臂开关管的集电极、第五上桥臂开关管的集电极、所述第六上桥臂开关管的集电极与所述第一高压区供电电源输入端连接,所述第一上桥臂开关管的发射极与所述第一下桥臂开关管的集电极连接,所述第二上桥臂开关管的发射极与所述第二下桥臂开关管的集电极连接,所述第三上桥臂开关管的发射极与所述第三下桥臂开关管的集电极连接,所述第四上桥臂开关管的发射极与所述第四下桥臂开关管的集电极连接,所述第五上桥臂开关管的发射极与所述第五下桥臂开关管的集电极连接,所述第六上桥臂开关管的发射极与所述第六下桥臂开关管的集电极连接;所述第一下桥臂开关管的发射极、所述第二下桥臂开关管的发射极及所述第三下桥臂开关管的发射极与所述第二电流采样电阻的第一端连接,所述第四下桥臂开关管的发射极、所述第五下桥臂开关管的发射极及所述第六下桥臂开关管的发射极与所述第三电流采样电阻的第一端连接;所述PFC开关管的集电极分别与所述PFC信号输出端及所述第一二极管的阳极连接,所述第一二极管的阴极与所述第二高压区供电电源输入端连接,所述PFC开关管的发射极与所述第一电流采样电阻的第一端连接;每一所述开关管的集电极和发射极之间连接一所述续流二极管;
    所述第一上桥臂开关管与所述第一下桥臂开关管的连接节点、所述第二上桥臂开关管与所述第二下桥臂开关管的连接节点以及所述第三上桥臂开关管与所述第三下桥臂开关管的连接节点与外部第一电机连接,所述第四上桥臂开关管与所述第四下桥臂开关管的连接节点、所述第五上桥臂开关管与所述第五下桥臂开关管的连接节点以及所述第六上桥臂开关管与所述第六下桥臂开关管的连接节点与外部第二电机连接。
  18. 一种空调器,其中,所述空调器包括如权利要求7所述的智能功率模块或者如权利要求8所述的智能功率模块,或者如权利要求13所述智能功率模块。
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