WO2020013191A1 - 高純度カルコゲナイド材料及びその製造方法 - Google Patents

高純度カルコゲナイド材料及びその製造方法 Download PDF

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Publication number
WO2020013191A1
WO2020013191A1 PCT/JP2019/027172 JP2019027172W WO2020013191A1 WO 2020013191 A1 WO2020013191 A1 WO 2020013191A1 JP 2019027172 W JP2019027172 W JP 2019027172W WO 2020013191 A1 WO2020013191 A1 WO 2020013191A1
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Prior art keywords
periodic table
group
phase
sns
chalcogenide
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English (en)
French (fr)
Japanese (ja)
Inventor
嘉太郎 野瀬
友輝 武村
涼司 勝部
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Kyoto University NUC
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Kyoto University NUC
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Priority to JP2020530205A priority Critical patent/JPWO2020013191A1/ja
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Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Definitions

  • M 1 represents a Group 14 element of the periodic table, and includes Sn, Si, Ge, Pb, and the like. From the viewpoint of easily obtaining a high-purity chalcogenide material, Sn, Ge, and the like are preferable, and Sn is preferably More preferred.
  • Method for producing a high-purity chalcogenide material comprises: (1) A raw material containing a periodic table group 14 molecule and a periodic table group 16 molecule is heated, and a two-phase coexisting material of the chalcogenide compound represented by the general formula (1) and the periodic table group 14 molecule is removed. The process of making, (2) a step of heating the two-phase coexisting material obtained in the step (1).
  • Step (1) Preparation of Two-Phase Coexisting Material
  • a raw material containing a molecule of Group 14 of the periodic table and a molecule of Group 16 of the periodic table is heated, and A biphasic coexisting material of the chalcogenide compound represented and the periodic table group 14 molecule is prepared.
  • composition ratio between the periodic table group 14 molecules and the periodic table group 16 molecules in the raw materials as long as the two-phase coexisting material of the chalcogenide compound represented by the general formula (1) and the periodic table group 14 molecules can be prepared.
  • the two-phase coexisting material of the chalcogenide compound represented by the general formula (1) and the periodic table group 14 molecules can be prepared.
  • S-Sn binary phase diagram shown in FIG. 1 when the Sn content is 100 mol% or in the immediate vicinity, it is a Sn stable region, and the Sn content is 50 mol%. In the case of or in the immediate vicinity of this, it is a stable region of SnS.
  • This example is an example of the S-Sn binary phase diagram, but the same tendency is observed in other binary phase diagrams of elements of Group 14 of the periodic table to elements of Group 16 of the periodic table.
  • Step (2) Chalcogenide Material Preparation
  • the two-phase coexisting material obtained in step (1) is heated.
  • molecules of the 14th group of the periodic table and the target chalcogenide compound are mixed.
  • these two components have significantly different equilibrium vapor pressures, use this vapor pressure difference.
  • only the target chalcogenide compound can be isolated.
  • Example 2 Soda-lime glass (SLG) was used for the substrate of the SnS single-phase thin film production thin film.
  • the SLG was cut into 10 mm ⁇ 10 mm ⁇ 0.5 mm using a diamond pen, washed with a neutral detergent, and then subjected to ultrasonic cleaning for 5 minutes for acetone, 2-propanol and ultrapure water in this order.
  • the washed SLG was dried using nitrogen gas. Note that the substrate temperature of SLG was room temperature or 300 ° C.
  • the Sn-SnS two-phase sample prepared in Production Example 1 was used as the evaporation source. The sample was cut to a width of about 3 mm using a diamond wheel saw.
  • FIG. 14 shows a stereogram and a surface SEM image of the obtained thin film (substrate temperature: room temperature).

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/JP2019/027172 2018-07-10 2019-07-09 高純度カルコゲナイド材料及びその製造方法 Ceased WO2020013191A1 (ja)

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JP2020530205A JPWO2020013191A1 (ja) 2018-07-10 2019-07-09 高純度カルコゲナイド材料及びその製造方法

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JP2018-130688 2018-07-10
JP2018130688 2018-07-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114908412A (zh) * 2022-05-09 2022-08-16 福州大学 一种高效生长三硫化二锡单晶热电材料的方法
JPWO2024242138A1 (https=) * 2023-05-25 2024-11-28

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0761818A (ja) * 1993-08-26 1995-03-07 Nisshin Steel Co Ltd ＳｎＳ半導体膜の製造方法
JP2007284309A (ja) * 2006-04-19 2007-11-01 Nihon Seiko Co Ltd 金属硫化物粉末の製造方法および装置
JP2015107903A (ja) * 2013-10-22 2015-06-11 住友金属鉱山株式会社 硫化スズ焼結体およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0761818A (ja) * 1993-08-26 1995-03-07 Nisshin Steel Co Ltd ＳｎＳ半導体膜の製造方法
JP2007284309A (ja) * 2006-04-19 2007-11-01 Nihon Seiko Co Ltd 金属硫化物粉末の製造方法および装置
JP2015107903A (ja) * 2013-10-22 2015-06-11 住友金属鉱山株式会社 硫化スズ焼結体およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VOZNYI, A. ET AL.: "Formation of SnS phase obtained by thermal vacuum annealing of SnS2 thin films and its application in solar cells", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 79, 20 February 2018 (2018-02-20), pages 32 - 39, XP085359417, DOI: 10.1016/j.mssp.2018.01.021 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114908412A (zh) * 2022-05-09 2022-08-16 福州大学 一种高效生长三硫化二锡单晶热电材料的方法
JPWO2024242138A1 (https=) * 2023-05-25 2024-11-28
WO2024242138A1 (ja) * 2023-05-25 2024-11-28 カルコジェニック株式会社 ＳｎＳ分散液及びその製造方法
JP7761334B2 (ja) 2023-05-25 2025-10-28 カルコジェニック株式会社 ＳｎＳ分散液及びその製造方法
DE112024002293T5 (de) 2023-05-25 2026-03-12 Chalcogenic Co., Ltd. SnS-Dispersionsflüssigkeit und Verfahren zur Herstellung derselben

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