JPWO2020013191A1 - 高純度カルコゲナイド材料及びその製造方法 - Google Patents

高純度カルコゲナイド材料及びその製造方法 Download PDF

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JPWO2020013191A1
JPWO2020013191A1 JP2020530205A JP2020530205A JPWO2020013191A1 JP WO2020013191 A1 JPWO2020013191 A1 JP WO2020013191A1 JP 2020530205 A JP2020530205 A JP 2020530205A JP 2020530205 A JP2020530205 A JP 2020530205A JP WO2020013191 A1 JPWO2020013191 A1 JP WO2020013191A1
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group
periodic table
phase
sns
chalcogenide
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JPWO2020013191A5 (https=
Inventor
嘉太郎 野瀬
嘉太郎 野瀬
友輝 武村
友輝 武村
涼司 勝部
涼司 勝部
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Kyoto University NUC
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Kyoto University NUC
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2020530205A 2018-07-10 2019-07-09 高純度カルコゲナイド材料及びその製造方法 Pending JPWO2020013191A1 (ja)

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JP2018130688 2018-07-10
JP2018130688 2018-07-10
PCT/JP2019/027172 WO2020013191A1 (ja) 2018-07-10 2019-07-09 高純度カルコゲナイド材料及びその製造方法

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JPWO2020013191A1 true JPWO2020013191A1 (ja) 2021-07-15
JPWO2020013191A5 JPWO2020013191A5 (https=) 2022-06-15

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114908412A (zh) * 2022-05-09 2022-08-16 福州大学 一种高效生长三硫化二锡单晶热电材料的方法
WO2024242138A1 (ja) * 2023-05-25 2024-11-28 カルコジェニック株式会社 ＳｎＳ分散液及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0761818A (ja) * 1993-08-26 1995-03-07 Nisshin Steel Co Ltd ＳｎＳ半導体膜の製造方法
JP2007284309A (ja) * 2006-04-19 2007-11-01 Nihon Seiko Co Ltd 金属硫化物粉末の製造方法および装置
JP2015107903A (ja) * 2013-10-22 2015-06-11 住友金属鉱山株式会社 硫化スズ焼結体およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0761818A (ja) * 1993-08-26 1995-03-07 Nisshin Steel Co Ltd ＳｎＳ半導体膜の製造方法
JP2007284309A (ja) * 2006-04-19 2007-11-01 Nihon Seiko Co Ltd 金属硫化物粉末の製造方法および装置
JP2015107903A (ja) * 2013-10-22 2015-06-11 住友金属鉱山株式会社 硫化スズ焼結体およびその製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
INTERNET ARCHIVE WAYBACK MACHINE, JPN6023000204, 27 December 2022 (2022-12-27), ISSN: 0005132984 *
VOZNYI, A., ET AL.: "Formation of SnS phase obtained by thermal vacuum annealing of SnS2 thin films and its application i", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 79, JPN6019038858, 20 February 2018 (2018-02-20), pages 32 - 39, XP085359417, ISSN: 0005132983, DOI: 10.1016/j.mssp.2018.01.021 *
九州大学中央分析センターニュース, vol. 第101号, JPN6023021994, 25 July 2008 (2008-07-25), pages 1 - 8, ISSN: 0005132985 *

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