WO2020004309A1 - 試料保持具 - Google Patents
試料保持具 Download PDFInfo
- Publication number
- WO2020004309A1 WO2020004309A1 PCT/JP2019/024920 JP2019024920W WO2020004309A1 WO 2020004309 A1 WO2020004309 A1 WO 2020004309A1 JP 2019024920 W JP2019024920 W JP 2019024920W WO 2020004309 A1 WO2020004309 A1 WO 2020004309A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ceramic substrate
- main surface
- adhesive layer
- sample holder
- heating resistor
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
- H05B3/748—Resistive heating elements, i.e. heating elements exposed to the air, e.g. coil wire heater
Definitions
- the present disclosure relates to a sample holder.
- a sample holder used in a semiconductor manufacturing apparatus or the like for example, a sample holder disclosed in Japanese Patent Application Laid-Open No. 2016-103560 (hereinafter, referred to as Patent Document 1) is known.
- the sample holder includes a ceramic substrate having a sample holding surface on an upper surface, a heating resistor provided on a lower surface of the ceramic substrate, and a metal support bonded to a lower surface of the ceramic substrate via a bonding layer.
- the configuration is known.
- the sample holder of the present disclosure includes a ceramic substrate having one main surface serving as a sample holding surface, a heating resistor provided inside or on the other main surface of the ceramic substrate, and the other main surface of the ceramic substrate.
- a metal member having a through-hole that is provided on one main surface and the other main surface, and the other main surface of the ceramic substrate and the one main surface of the metal member.
- a lead terminal inserted into the metal member, provided inside the adhesive layer, electrically connecting the heating resistor and the lead terminal, and forming the ceramic substrate.
- a conductive portion having a region apart from the other main surface and extending in a direction along the other main surface; a metal bonding member for bonding the conductive portion and the lead terminal; Low conductivity , And a, and the low thermal conductive member which covers the joining member.
- the sample holder 10 includes the ceramic substrate 1 whose one main surface is the sample holding surface 11.
- the ceramic substrate 1 has, for example, a circular outer peripheral shape when viewed in a plan view, and is formed in a disk shape having a diameter similar to that of the held object.
- the ceramic substrate 1 has a sample holding surface 11 for holding an object to be held on one main surface (upper surface).
- oxide ceramics such as alumina, sapphire, alumina-titania composite material or barium titanate, or nitride ceramics such as aluminum nitride can be used.
- the dimensions of the ceramic substrate 1 can be set, for example, to a diameter of 200 mm to 500 mm and a thickness of 2 mm to 15 mm.
- the sample holder 10 holds an object to be held (sample) such as a silicon wafer, and is, for example, an electrostatic chuck.
- the ceramic substrate 1 has an electrode for electrostatic attraction inside.
- the electrode for electrostatic attraction has, for example, a material such as platinum or tungsten.
- a lead wire is connected to the electrode for electrostatic attraction.
- the electrode for electrostatic attraction is connected to a power supply via this lead wire.
- the object to be held (sample) adsorbed on the sample holding surface 11 is connected to the ground. As a result, an electrostatic attraction force is generated between the electrostatic chucking electrode and the object to be held, and the object to be held (sample) can be sucked and fixed to the sample holding surface 11.
- a heating resistor 2 is provided inside the ceramic substrate 1 or on the other main surface. In the sample holder 10 of the embodiment shown in FIG. 1, the heating resistor 2 is provided on the other main surface (lower surface) of the ceramic substrate 1.
- the heating resistor 2 is a member for heating the sample held on the sample holding surface 11 which is one main surface (upper surface) of the ceramic substrate 1.
- the heating resistor 2 is electrically connected to the lead terminal 5 through a conductive portion 6 described later, and the heating resistor 2 can generate heat by flowing a current through the heating resistor 2 through these. .
- the heat generated by the heating resistor 2 travels inside the ceramic substrate 1 and reaches the sample holding surface 11. Thereby, the sample held on the sample holding surface 11 can be heated.
- the heating resistor 2 is a linear pattern having a plurality of folded portions, and is provided on almost the entire other main surface (lower surface) of the ceramic substrate 1. Further, the heating resistor 2 has a pattern shape that is optimally designed to improve heat uniformity.
- the dimensions of the heating resistor 2 are designed according to the required resistance and electric power. For example, the width of the heating resistor 2 is set to 0.1 mm to 10 mm, the thickness is set to 10 ⁇ m to 5 mm, and the length is set to 50 mm to 5 m. Thereby, it is possible to suppress a variation in heat distribution on one main surface (upper surface) of the sample holder 10.
- the heating resistor 2 contains a conductor component such as silver, palladium, platinum, aluminum, and gold.
- the heating resistor 2 may include a glass component. Examples of the glass component include oxides of materials such as silicon, aluminum, bismuth, calcium, boron, and zinc.
- the conductor component may be tungsten, tungsten carbide, or the like.
- the following method can be used for controlling the temperature of the sample holder 10.
- the temperature can be measured by bringing a thermocouple into contact with the ceramic substrate 1.
- the temperature of the heating resistor 2 can also be measured by measuring the resistance by bringing a resistance temperature sensor into contact with the ceramic substrate 1.
- the heat generation of the heating resistor 2 is controlled so that the temperature of the sample holder 10 becomes constant. Can be controlled.
- the metal member 3 is provided so as to cover the other main surface of the ceramic substrate 1. Further, the metal member 3 has a through hole 31 that is opened on one main surface and the other main surface.
- the metal member 3 is provided to support the ceramic substrate 1.
- the metal member 3 covers the other main surface such that one main surface (upper surface) faces the other main surface (lower surface) of the ceramic substrate 1.
- the other main surface (lower surface) of ceramic substrate 1 and one main surface (upper surface) of metal member 3 are joined by adhesive layer 4.
- the “metal” of the metal member 3 includes a composite material of ceramic and metal, a composite material made of fiber-reinforced metal, and the like.
- the metal constituting the metal member 3 may be aluminum (Al), copper (Cu), stainless steel, or the like. Nickel (Ni) or an alloy of these metals can be used.
- the metal member 3 has, for example, a circular outer peripheral shape in plan view and is formed in a disk shape having a diameter substantially equal to that of the ceramic substrate 1.
- the metal member 3 has a thickness of, for example, 10 mm to 100 mm.
- the metal member 3 has a through hole 31 opened on one main surface (upper surface) and the other main surface (lower surface), and the lead terminals 5 are provided so as to pass through the inside of the through hole 31. Has been. In other words, the lead terminal 5 is inserted into the metal member 3.
- the shape of the through hole 31 is, for example, a shape in which the internal space is cylindrical.
- the diameter of the through hole 31 can be set to, for example, 0.1 mm to 10 mm.
- the lead terminal 5 has one end connected to the conduction portion 6 and the other end connected to an external power supply.
- a metal material having electrical conductivity such as nickel can be used as the lead terminal 5, for example.
- the metal member 3 may include a flow path for circulating a heat medium such as a gas or a liquid.
- a heat medium such as a gas or a liquid.
- a liquid such as water or silicone oil or a gas such as helium (He) or nitrogen (N 2 ) can be used as the heat medium.
- An adhesive layer 4 is provided between the other main surface of the ceramic substrate 1 and one main surface of the metal member 3 to bond them.
- the other main surface (lower surface) of the ceramic substrate 1 and one main surface (upper surface) of the metal member 3 are joined by the adhesive layer 4.
- the adhesive layer 4 has a polymer material.
- the polymer material include an epoxy resin and a silicone resin.
- the adhesive layer may have a filler dispersed in the polymer material in addition to the polymer material.
- the filler for example, ceramic particles can be used.
- the ceramic particles for example, alumina or aluminum nitride can be used.
- the thickness of the adhesive layer 4 can be set to, for example, 0.05 mm to 2.0 mm.
- the sample holder 10 may have a through hole penetrating from the upper surface of the ceramic substrate 1 through the adhesive layer 4 to the lower surface of the metal member 3.
- the sample holder 10 includes the conducting portion 6 provided inside the adhesive layer 4.
- the conducting portion 6 is made of a metal material having electrical conductivity, such as copper or aluminum.
- the conducting portion 6 electrically connects the heating resistor 2 and the lead terminal 5, and has one end connected to the heating resistor 2 and the other end connected to the lead terminal 5.
- the conducting portion 6 has a region extending away from the other main surface of the ceramic substrate 1 and extending in a direction along the other main surface. Specifically, it has a portion along the lower surface of the ceramic substrate 1 and a portion extending in the vertical direction.
- a portion of the conductive portion 6 along the lower surface of the ceramic substrate for example, a metal plate, a metal foil, or the like can be used.
- a portion of the conductive portion 6 extending in the vertical direction electrically connects the heating resistor 2 and a portion of the conductive portion 6 along the lower surface of the ceramic substrate 1.
- a via-hole conductor, a metal foil Etc. can be used.
- the sample holder 10 includes a metal joining member 7 for joining the conducting portion 6 and the lead terminal 5.
- the conductive portion 6 and the lead terminal 5 are electrically connected by the joining member 7.
- the joining member 7 for example, solder, brazing material, or the like having electrical conductivity can be used.
- the joining member 7 is covered with the low heat conductive member 8.
- the low heat conductive member 8 includes a material having a lower thermal conductivity than the adhesive layer 4.
- the thickness of the low thermal conductive member 8 is, for example, 0.01 mm to 0.1 mm.
- the thermal conductivity of the adhesive layer 4 and the low thermal conductive member 8 is sampled and measured by a laser flash method (apparatus name: laser flash method thermophysical property measuring apparatus, company name: Kyoto Electronics Industry Co., Ltd., model number: LFA502). Can be measured.
- a laser flash method Appatus name: laser flash method thermophysical property measuring apparatus, company name: Kyoto Electronics Industry Co., Ltd., model number: LFA502.
- the low heat conductive member 8 may be an insulating material.
- the insulating property around the joining member 7 can be improved.
- the adhesive layer 4 contains epoxy resin as a main component (having the highest content)
- polyimide, fluororesin, or graphite is used.
- silicone resin is used as the main component (having the highest content)
- Polyimide, fluorine resin, and graphite are used.
- the low thermal conductive member 8 may be made of a material having a lower elastic modulus than the joining member 7. Thereby, the stress applied to the joining member 7 can be buffered by the low thermal conductive member 8, and the durability can be improved.
- the low heat conductive member 8 may cover a part of a region of the conduction portion 6 extending in a direction along the other main surface of the ceramic substrate 1, but as shown in FIG. 2.
- the low heat conductive member 8 may cover at least the entire region of the conductive portion 6 extending in the direction along the other main surface of the ceramic substrate 1, and the low heat conductive member 8 may be the other of the ceramic substrate 1 in the conductive portion 6.
- the low heat conductive member 8 covers the heat pull generated due to the higher thermal conductivity than the surrounding adhesive layer 4. And the thermal conductivity with the surrounding adhesive layer 4 approaches, so that the influence of heat on the sample holding surface 11 is suppressed, and the uniformity of the sample holding surface 11 is improved.
- a method for manufacturing the sample holder 10 will be described.
- alumina ceramics will be described as an example, other ceramic materials such as aluminum nitride ceramics can be manufactured by the same method.
- a predetermined amount of alumina powder as a main raw material is weighed and wet-pulverized and mixed in a ball mill together with balls made of metal or ceramics with ion-exchanged water, an organic solvent or the like or an organic dispersant for 24 to 72 hours.
- a predetermined amount of an organic binder such as polyvinyl alcohol, polyvinyl butyral or an acrylic resin and a plasticizer and an antifoaming agent as auxiliary organic materials are added to the raw material slurry thus pulverized and mixed, and further mixed for 24 to 48 hours.
- the mixed organic-inorganic mixed slurry is formed into a ceramic green sheet by a doctor blade method, a calendar roll method, a press molding method, an extrusion molding method, or the like.
- a paste-like electrode material such as platinum or tungsten for forming the electrostatic chucking electrode is printed and formed by a known screen printing method or the like.
- a hole for embedding a via hole conductor of ⁇ 0.1 mm to 0.8 mm is provided by laminating 3 to 10 ceramic green sheets using a drilling machine or the like.
- a paste-like electrode material is embedded in the hole to form a via-hole conductor.
- a first conductor pattern having a diameter of 1 mm to 2 mm and a thickness of 20 ⁇ m to 30 ⁇ m is printed and formed directly below the via-hole conductor using a paste-like electrode material.
- a second conductive pattern having a diameter of 5 mm to 15 mm and a size of 20 ⁇ m to 30 ⁇ m is printed and formed on the first conductive pattern formed by the printing using a paste-like electrode material.
- the ceramic green sheet in which the first conductor pattern and the second conductor pattern are formed, the ceramic green sheet in which the via-hole conductor is embedded, and the green sheet in which the paste-like electrode material is not printed and formed are stacked.
- the lamination may be performed at a predetermined temperature while applying a pressure equal to or higher than the yield stress value of the ceramic green sheets.
- a known technique such as a uniaxial pressing method or an isotropic pressing method (dry method, wet method) may be applied.
- the obtained laminate is fired at a predetermined temperature and in an atmosphere to produce a ceramic substrate 1 in which electrodes for electrostatic attraction are provided.
- the ceramic substrate 1 is processed into a predetermined shape and thickness using a machining center, a rotary processing machine or a cylindrical grinder.
- the heating resistor 2 is provided inside or on the back surface (the other main surface) of the ceramic substrate 1.
- the heat generating resistor 2 is a member for generating Joule heat by applying a current to heat an object to be heated.
- the heating resistor 2 is provided inside the ceramic substrate 1, it is formed in the same manner as the electrostatic attraction electrode.
- the heating resistor 2 preferably contains a conductor component and a glass component.
- the conductor component includes, for example, a metal material such as silver palladium, platinum, aluminum or gold. In order to prevent the glass component from foaming, a metal that can be sintered in the air may be selected as the metal material.
- the glass component includes oxides of materials such as silicon, aluminum, bismuth, calcium, boron, and zinc.
- a concave portion for power supply is provided such that a part of the electrostatic attraction electrode is exposed by a machining center or a drilling machine.
- the metal member 3 made of aluminum or the like and the ceramic substrate 1 are joined.
- the heating resistor 2 is provided on the back surface (the other main surface) of the ceramic substrate 1, an epoxy resin paste is applied to the back surface of the ceramic substrate 1, and an excess resin paste is removed with a squeegee or the like and hardened.
- the power supply portions at both ends of the heating resistor 2 are sealed to prevent the resin paste from adhering to the power supply portions.
- the first layer of the adhesive layer 4 is formed by processing with good flatness by rotary processing or the like.
- the conductive portion 6 having a metal foil such as copper or aluminum is disposed.
- the conductive portion 6 is connected to the heating resistor 2 at a portion extending in the vertical direction by solder or the like.
- wiring to a region connectable to the lead terminal 5 is performed.
- One end of a portion of the conductive portion 6 along the lower surface of the ceramic substrate 1 is connected to a vertically extending portion, and the other end of the portion along the lower surface of the ceramic substrate 1 is connected to the lead terminals 5 by solder or the like.
- the joint is covered with a low heat conductive member 8 having a lower thermal conductivity than the surrounding adhesive layer.
- the thermal conductivity of the solder and the low thermal conductive member 8 is the same as the thermal conductivity of the adhesive layer 4.
- the metal member 3 made of aluminum or the like and the ceramic substrate 1 are joined.
- a silicone paste to be the second layer of the adhesive layer 4 is applied to the metal member 3, excess silicone paste is removed with a squeegee or the like, and the ceramic substrate 1 is adhered to the metal member 3 in a vacuum and pressed to a predetermined thickness. Cur at 100 ° C. for 2 hours.
- the adhesive to be the adhesive layer 4 may be cured at room temperature by adding a catalyst or the like. At this time, they are aligned and bonded so that the lead terminals 5 are inserted into the through holes 31 provided in the metal member 3.
- the sample holder of the present embodiment can be manufactured.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
2:発熱抵抗体
3:金属部材
31:貫通孔
4:接着層
5:リード端子
6:導通部
7:接合部材
8:低熱伝導部材
Claims (4)
- 一方の主面が試料保持面であるセラミック基板と、該セラミック基板の内部または他方の主面に設けられた発熱抵抗体と、前記セラミック基板の前記他方の主面を覆うように設けられており、一方の主面と他方の主面とに開口する貫通孔を有する金属部材と、前記セラミック基板の前記他方の主面と前記金属部材の前記一方の主面とを接着する接着層と、前記金属部材に挿入されたリード端子と、前記接着層の内部に設けられており、前記発熱抵抗体と前記リード端子とを電気的に接続するとともに、前記セラミック基板の前記他方の主面から離れて、前記他方の主面に沿った方向に伸びる領域を有する導通部と、前記導通部および前記リード端子を接合する金属製の接合部材と、前記接着層よりも熱伝導率が小さく、前記接合部材を覆う低熱伝導部材と、を備えている試料保持具。
- 前記低熱伝導部材は、絶縁性の材料を有する請求項1に記載の試料保持具。
- 前記低熱伝導部材は、前記接合部材よりも弾性率が小さい材料を有する請求項1または請求項2に記載の試料保持具。
- 前記低熱伝導部材は、少なくとも前記導通部における前記セラミック基板の前記他方の主面に沿った方向に伸びる領域の全体を覆う請求項1乃至請求項3のいずれかに記載の試料保持具。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020207034702A KR102476083B1 (ko) | 2018-06-26 | 2019-06-24 | 시료 유지구 |
JP2020527499A JP6947932B2 (ja) | 2018-06-26 | 2019-06-24 | 試料保持具 |
US17/252,012 US20210265190A1 (en) | 2018-06-26 | 2019-06-24 | Sample holder |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018-120971 | 2018-06-26 | ||
JP2018120971 | 2018-06-26 |
Publications (1)
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WO2020004309A1 true WO2020004309A1 (ja) | 2020-01-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2019/024920 WO2020004309A1 (ja) | 2018-06-26 | 2019-06-24 | 試料保持具 |
Country Status (4)
Country | Link |
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US (1) | US20210265190A1 (ja) |
JP (1) | JP6947932B2 (ja) |
KR (1) | KR102476083B1 (ja) |
WO (1) | WO2020004309A1 (ja) |
Families Citing this family (1)
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KR20220101349A (ko) | 2021-01-11 | 2022-07-19 | 삼성전자주식회사 | 스토리지 장치의 데이터 기입 방법 및 이를 수행하는 스토리지 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2002089530A1 (en) * | 2001-05-02 | 2002-11-07 | Saint-Gobain Ceramics And Plastics, Inc. | Ceramic heater with heater element and method for use thereof |
JP2008078106A (ja) * | 2006-09-19 | 2008-04-03 | Momentive Performance Materials Inc | 向上した熱伝導度を有するアセンブリー |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3897563B2 (ja) * | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | 加熱装置 |
US8525418B2 (en) * | 2005-03-31 | 2013-09-03 | Ngk Spark Plug Co., Ltd. | Electrostatic chuck |
JP5029257B2 (ja) * | 2007-01-17 | 2012-09-19 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
KR101712538B1 (ko) * | 2011-03-23 | 2017-03-06 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
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JP6321522B2 (ja) * | 2014-11-05 | 2018-05-09 | 日本特殊陶業株式会社 | 加熱装置 |
JP5962833B2 (ja) * | 2015-01-16 | 2016-08-03 | Toto株式会社 | 静電チャック |
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KR102224133B1 (ko) * | 2016-12-26 | 2021-03-08 | 교세라 가부시키가이샤 | 시료 유지구 |
JP7014821B2 (ja) * | 2018-01-29 | 2022-02-01 | 京セラ株式会社 | 試料保持具 |
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2019
- 2019-06-24 JP JP2020527499A patent/JP6947932B2/ja active Active
- 2019-06-24 WO PCT/JP2019/024920 patent/WO2020004309A1/ja active Application Filing
- 2019-06-24 US US17/252,012 patent/US20210265190A1/en active Pending
- 2019-06-24 KR KR1020207034702A patent/KR102476083B1/ko active IP Right Grant
Patent Citations (2)
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WO2002089530A1 (en) * | 2001-05-02 | 2002-11-07 | Saint-Gobain Ceramics And Plastics, Inc. | Ceramic heater with heater element and method for use thereof |
JP2008078106A (ja) * | 2006-09-19 | 2008-04-03 | Momentive Performance Materials Inc | 向上した熱伝導度を有するアセンブリー |
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KR102476083B1 (ko) | 2022-12-09 |
US20210265190A1 (en) | 2021-08-26 |
JPWO2020004309A1 (ja) | 2021-08-02 |
KR20210003270A (ko) | 2021-01-11 |
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