WO2020000623A1 - 一种具有多功能复合特性的低辐射玻璃 - Google Patents

一种具有多功能复合特性的低辐射玻璃 Download PDF

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Publication number
WO2020000623A1
WO2020000623A1 PCT/CN2018/102064 CN2018102064W WO2020000623A1 WO 2020000623 A1 WO2020000623 A1 WO 2020000623A1 CN 2018102064 W CN2018102064 W CN 2018102064W WO 2020000623 A1 WO2020000623 A1 WO 2020000623A1
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layer
depositing
thickness
azo
low
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PCT/CN2018/102064
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French (fr)
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黄倩
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黄倩
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3639—Multilayers containing at least two functional metal layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering

Definitions

  • the invention relates to the field of low-emissivity glass, in particular to a low-emissivity glass with multifunctional composite characteristics.
  • low-e glass is also called Low-E glass. It refers to the coating of one or more layers of a specific metal or metal oxide, nitride film on the glass surface, so that it has the performance of blocking infrared thermal radiation, and can limit direct solar radiation as required, thereby achieving energy saving effects.
  • a kind of coated glass. Insulating glass made of low-emissivity coated glass has a strong barrier to heat transfer in three ways: radiation, conduction, and convection.
  • the u value of ordinary white glass (6mm) is about 6.5W / m 2 K
  • the u value of ordinary building exterior walls is 2.3W / m 2 K
  • the u value of ordinary transparent 6mm / 12A / 6mm insulating glass is 2.7W / m 2 K
  • the low U-coated insulating glass has a U value of 1.3-1.8W / m 2 K, and its thermal insulation effect has far exceeded that of ordinary exterior walls.
  • the same Low-E glass is made of hollow glass of the same specification. When the Low-E film is located on the second surface and the third surface, the U value is the same, but the shading coefficient is different.
  • the shading coefficient is small, that is, the shading is good, and the air conditioning costs in summer can be appropriately reduced.
  • This matching method is suitable for hot summer and warm winter regions and most hot and cold winter regions. ;
  • the shading coefficient is large, that is, allowing more solar radiation to enter the room, which can save winter heating costs more effectively.
  • This filming method is mainly used in northern cold regions.
  • the object of the present invention is to provide a low-emissivity glass with a multifunctional composite property, which overcomes the disadvantages of the prior art.
  • the present invention provides a low-emissivity glass with multifunctional composite characteristics, which is characterized in that the low-emissivity glass is prepared by the following method: depositing a bottom dielectric layer on a glass substrate; and on the bottom dielectric layer Depositing a first isolation layer; depositing a first AZO layer on the first isolation layer; depositing a first vanadium dioxide layer on the first AZO layer; depositing a first Au layer on the first vanadium dioxide layer; A first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer; a second AZO layer is deposited on the first Pt layer; a second isolation is deposited on the second AZO layer Layer; on the second isolation layer, a top protective layer is deposited.
  • the underlying dielectric layer is a niobium oxide layer
  • the thickness of the underlying dielectric layer is 30-40 nm
  • the first isolation layer is a metal niobium layer
  • the thickness of the first isolation layer is 20-30 nm.
  • the second isolation layer is a NiCr layer
  • the thickness of the second isolation layer is 30-40 nm
  • the top protective layer is a Si3N4 layer
  • the thickness of the top protective layer is 20-30 nm.
  • depositing the first AZO layer on the first isolation layer is specifically: adopting a radio frequency sputtering method, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 10-20 sccm, and the radio frequency power frequency is 2 -4kHz, sputtering power is 100-150W, substrate temperature is 150-200 ° C, and the thickness of the first AZO layer is 5-10nm.
  • depositing the first vanadium dioxide layer on the first AZO layer is specifically: adopting a radio frequency sputtering method, the target material is metal V, the oxygen flow rate is 10-20 sccm, and the sputtering power is 100-150W
  • the substrate temperature is 300-330 ° C, and the thickness of the first vanadium dioxide layer is 10-15nm.
  • depositing the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 30-40 sccm, and the sputtering power is 200-300W
  • the substrate temperature is 200-250 ° C, and the thickness of the first Au layer is 3-5nm.
  • depositing the first Cu layer on the first Au layer is specifically: adopting a radio frequency sputtering method, the target material is metallic Cu, the nitrogen flow rate is 20-30 sccm, and the sputtering power is 350-400W.
  • the sheet temperature is 200-250 ° C, and the thickness of the first Cu layer is 4-6 nm.
  • depositing the first Pt layer on the first Cu layer is specifically: adopting a radio frequency sputtering method, the target material is metal Pt, the nitrogen flow rate is 100-120 sccm, and the sputtering power is 700-800W.
  • the sheet temperature is 200-250 ° C, and the thickness of the first Pt layer is 2-3 nm.
  • depositing the second AZO layer on the first Pt layer is specifically: adopting a radio frequency sputtering method, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 10-20 sccm, and the radio frequency power frequency is 5 -10kHz, sputtering power is 200-300W, substrate temperature is 200-250 ° C, and the thickness of the first AZO layer is 5-10nm.
  • the present invention has the following beneficial effects:
  • the mainstream low-e glass is silver-containing low-e glass, including single-, double-, and triple-silver low-e glass.
  • the silver-containing low-e glass is mature and the cost is low, the silver-containing glass has deep color and transparency. The defect of poor light color leads to the unsightly appearance of the building and the dim and depressing indoor light.
  • the prior art also proposes low-radiation glass that does not contain silver. This glass mainly relies on the infrared absorption characteristics of materials such as AZO to achieve low-radiation characteristics.
  • the present invention proposes a composite low-emissivity glass including multiple functional film layers.
  • the low-emissivity glass of the present invention has a reasonable structure, small interfacial stress between the layers, tight film layer bonding, and delamination. Low risk, few interlayer defects, and excellent optical performance.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 30 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 20 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 30 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 20 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 10 sccm, the RF power frequency is 2 kHz, the sputtering power is 100 W, and the substrate temperature It is 150 ° C, and the thickness of the first AZO layer is 5 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is specifically: using a radio frequency sputtering method, the target material is metal V, the oxygen flow rate is 10 sccm, the sputtering power is 100W, the substrate temperature is 300 ° C, and the first dioxide
  • the vanadium layer has a thickness of 10 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 30 sccm, the sputtering power is 200W, the substrate temperature is 200 ° C, and the first Au layer is The thickness is 3 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 20 sccm, the sputtering power is 350W, the substrate temperature is 200 ° C, and the thickness of the first Cu layer is 4nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow rate is 100 sccm, the sputtering power is 700 W, the substrate temperature is 200 ° C, and the thickness of the first Pt layer is 2nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 10 sccm, the RF power frequency is 5 kHz, the sputtering power is 200 W, and the substrate temperature At 200 ° C, the thickness of the first AZO layer was 5 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 40 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 30 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 40 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 30 nm.
  • the deposition of the first AZO layer on the first isolation layer is specifically: adopting a radio frequency sputtering method, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 20 sccm, the RF power frequency is 4 kHz, the sputtering power is 150 W, and the substrate temperature The temperature was 200 ° C, and the thickness of the first AZO layer was 10 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 20 sccm, the sputtering power is 150W, the substrate temperature is 330 ° C, and the first dioxide
  • the vanadium layer has a thickness of 15 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 40 sccm, the sputtering power is 300 W, the substrate temperature is 250 ° C, and the first Au layer is The thickness is 5 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 30 sccm, the sputtering power is 400 W, the substrate temperature is 250 ° C, and the thickness of the first Cu layer is 6nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 120 sccm, the sputtering power is 800 W, the substrate temperature is 250 ° C, and the thickness of the first Pt layer is 3 nm .
  • the deposition of the second AZO layer on the first Pt layer is as follows: the RF sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 20 sccm, the RF power frequency is 10 kHz, the sputtering power is 300 W, and the substrate temperature The temperature is 250 ° C, and the thickness of the first AZO layer is 10 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow is 15 sccm, the RF power frequency is 3 kHz, the sputtering power is 120 W, and the substrate temperature At 170 ° C, the thickness of the first AZO layer was 8 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 15 sccm, the sputtering power is 120W, the substrate temperature is 310 ° C, and the first dioxide The thickness of the vanadium layer is 12 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 35 sccm, the sputtering power is 250W, the substrate temperature is 230 ° C, and the first Au layer is The thickness is 4 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 25 sccm, the sputtering power is 370W, the substrate temperature is 30 ° C, and the thickness of the first Cu layer is 5nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 110 sccm, the sputtering power is 750W, the substrate temperature is 230 ° C, and the thickness of the first Pt layer is 2.5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 15 sccm, the RF power frequency is 8 kHz, the sputtering power is 250 W, and the substrate temperature At 230 ° C, the thickness of the first AZO layer was 8 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is specifically: adopting a radio frequency sputtering method, the target material is zinc oxide with an Al patch, a nitrogen flow rate of 30 sccm, an RF power frequency of 5 kHz, a sputtering power of 200 W, and a substrate temperature At 250 ° C, the thickness of the first AZO layer was 3 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 15 sccm, the sputtering power is 120W, the substrate temperature is 310 ° C, and the first dioxide The thickness of the vanadium layer is 12 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 35 sccm, the sputtering power is 250W, the substrate temperature is 230 ° C, and the first Au layer is The thickness is 4 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 25 sccm, the sputtering power is 370W, the substrate temperature is 30 ° C, and the thickness of the first Cu layer is 5nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 110 sccm, the sputtering power is 750W, the substrate temperature is 230 ° C, and the thickness of the first Pt layer is 2.5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 15 sccm, the RF power frequency is 8 kHz, the sputtering power is 250 W, and the substrate temperature At 230 ° C, the thickness of the first AZO layer was 8 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow is 15 sccm, the RF power frequency is 3 kHz, the sputtering power is 120 W, and the substrate temperature At 170 ° C, the thickness of the first AZO layer was 8 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is specifically: using a radio frequency sputtering method, the target material is metal V, the oxygen flow rate is 30 sccm, the sputtering power is 200W, the substrate temperature is 350 ° C, and the first dioxide The vanadium layer has a thickness of 20 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 35 sccm, the sputtering power is 250W, the substrate temperature is 230 ° C, and the first Au layer is The thickness is 4 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 25 sccm, the sputtering power is 370W, the substrate temperature is 30 ° C, and the thickness of the first Cu layer is 5nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 110 sccm, the sputtering power is 750W, the substrate temperature is 230 ° C, and the thickness of the first Pt layer is 2.5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 15 sccm, the RF power frequency is 8 kHz, the sputtering power is 250 W, and the substrate temperature At 230 ° C, the thickness of the first AZO layer was 8 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow is 15 sccm, the RF power frequency is 3 kHz, the sputtering power is 120 W, and the substrate temperature At 170 ° C, the thickness of the first AZO layer was 8 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 15 sccm, the sputtering power is 120W, the substrate temperature is 310 ° C, and the first dioxide The thickness of the vanadium layer is 12 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is as follows: the radio frequency sputtering method is used, the target is metal Au, the nitrogen flow is 50 sccm, the sputtering power is 350W, the substrate temperature is 300 ° C, and the first Au layer is The thickness is 6 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 25 sccm, the sputtering power is 370W, the substrate temperature is 30 ° C, and the thickness of the first Cu layer is 5nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 110 sccm, the sputtering power is 750W, the substrate temperature is 230 ° C, and the thickness of the first Pt layer is 2.5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 15 sccm, the RF power frequency is 8 kHz, the sputtering power is 250 W, and the substrate temperature At 230 ° C, the thickness of the first AZO layer was 8 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the underlying dielectric layer is a niobium oxide layer, the thickness of the underlying dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow is 15 sccm, the RF power frequency is 3 kHz, the sputtering power is 120 W, and the substrate temperature At 170 ° C, the thickness of the first AZO layer was 8 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 15 sccm, the sputtering power is 120W, the substrate temperature is 310 ° C, and the first dioxide The thickness of the vanadium layer is 12 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 35 sccm, the sputtering power is 250W, the substrate temperature is 230 ° C, and the first Au layer is The thickness is 4 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 40 sccm, the sputtering power is 450 W, the substrate temperature is 150 ° C, and the thickness of the first Cu layer is 10nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 110 sccm, the sputtering power is 750W, the substrate temperature is 230 ° C, and the thickness of the first Pt layer is 2.5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 15 sccm, the RF power frequency is 8 kHz, the sputtering power is 250 W, and the substrate temperature At 230 ° C, the thickness of the first AZO layer was 8 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow is 15 sccm, the RF power frequency is 3 kHz, the sputtering power is 120 W, and the substrate temperature At 170 ° C, the thickness of the first AZO layer was 8 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 15 sccm, the sputtering power is 120W, the substrate temperature is 310 ° C, and the first dioxide The thickness of the vanadium layer is 12 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 35 sccm, the sputtering power is 250W, the substrate temperature is 230 ° C, and the first Au layer is The thickness is 4 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 25 sccm, the sputtering power is 370W, the substrate temperature is 30 ° C, and the thickness of the first Cu layer is 5nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 50 sccm, the sputtering power is 600 W, the substrate temperature is 300 ° C, and the thickness of the first Pt layer is 5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 15 sccm, the RF power frequency is 8 kHz, the sputtering power is 250 W, and the substrate temperature At 230 ° C, the thickness of the first AZO layer was 8 nm.
  • Low-emissivity glass is prepared by depositing a bottom dielectric layer on a glass substrate; depositing a first isolation layer on the bottom dielectric layer; depositing a first AZO layer on the first isolation layer; and depositing a first AZO layer A first vanadium dioxide layer is deposited; a first Au layer is deposited on the first vanadium dioxide layer; a first Cu layer is deposited on the first Au layer; a first Pt layer is deposited on the first Cu layer On the first Pt layer, a second AZO layer is deposited; on the second AZO layer, a second isolation layer is deposited; on the second isolation layer, a top protective layer is deposited.
  • the bottom dielectric layer is a niobium oxide layer, the thickness of the bottom dielectric layer is 35 nm, the first isolation layer is a metal niobium layer, and the thickness of the first isolation layer is 25 nm.
  • the second isolation layer is a NiCr layer, the thickness of the second isolation layer is 35 nm, the top protective layer is a Si3N4 layer, and the thickness of the top protective layer is 25 nm.
  • the deposition of the first AZO layer on the first isolation layer is as follows: the radio frequency sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow is 15 sccm, the RF power frequency is 3 kHz, the sputtering power is 120 W, and the substrate temperature At 170 ° C, the thickness of the first AZO layer was 8 nm.
  • the deposition of the first vanadium dioxide layer on the first AZO layer is as follows: the radio frequency sputtering method is used, the target material is metal V, the oxygen flow rate is 15 sccm, the sputtering power is 120W, the substrate temperature is 310 ° C, and the first dioxide The thickness of the vanadium layer is 12 nm.
  • the deposition of the first Au layer on the first vanadium dioxide layer is specifically: adopting a radio frequency sputtering method, the target material is metal Au, the nitrogen flow rate is 35 sccm, the sputtering power is 250W, the substrate temperature is 230 ° C, and the first Au layer is The thickness is 4 nm.
  • the deposition of the first Cu layer on the first Au layer is as follows: the radio frequency sputtering method is used, the target material is metallic Cu, the nitrogen flow rate is 25 sccm, the sputtering power is 370W, the substrate temperature is 30 ° C, and the thickness of the first Cu layer is 5nm.
  • the deposition of the first Pt layer on the first Cu layer is as follows: the radio frequency sputtering method is used, the target is metal Pt, the nitrogen flow is 110 sccm, the sputtering power is 750W, the substrate temperature is 230 ° C, and the thickness of the first Pt layer is 2.5nm.
  • the deposition of the second AZO layer on the first Pt layer is as follows: the RF sputtering method is used, the target material is zinc oxide with an Al patch, the nitrogen flow rate is 25 sccm, the RF power frequency is 15 kHz, the sputtering power is 350 W, and the substrate temperature At 300 ° C, the thickness of the first AZO layer was 15 nm.
  • Example 1 70% 1.32
  • Example 2 67% 1.31
  • Example 3 69% 1.35
  • Example 4 twenty four% 1.59
  • Example 5 26% 1.61
  • Example 6 29% 1.70
  • Example 7 35% 1.75
  • Example 8 34% 1.84
  • Example 9 38% 1.80

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Abstract

一种具有多功能复合特性的低辐射玻璃，低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。克服现有技术的缺陷，提出了一种包含多种功能膜层的复合低辐射玻璃，低辐射玻璃结构合理，各层之间界面应力小，膜层结合紧密，脱层风险小，层间缺陷少，光学性能优异。

Description

一种具有多功能复合特性的低辐射玻璃 技术领域
本发明涉及低辐射玻璃领域，特别涉及具有多功能复合特性的低辐射玻璃。
背景技术
所谓低辐射玻璃又称Low-E玻璃。是指在玻璃表面上镀制一层或多层特定的金属或金属氧化物、氮化物薄膜，使它具有阻挡红外热辐射的性能，并可根据需要限制太阳直接辐射，从而达到节能效果的一种镀膜玻璃。使用低辐射镀膜玻璃制成的中空玻璃，对辐射、传导和对流这三种方式的热传递均有很强的阻隔作用。普通白玻(6mm)的u值约为6.5W/m 2K，普通建筑外墙u值为2.3W/m 2K，普通透明6mm/12A/6mm中空玻璃的u值为2.7W/m 2K，而低辐射镀膜中空玻璃的U值为1.3-1.8W/m 2K，其保温效果已远远超过普通外墙。同样的Low-E玻璃制成同规格的中空玻璃，当Low-E膜分别位于第二表面和第三表面时，其U值相同，但遮阳系数却不同。当Low-E膜位于第二表面时，遮阳系数较小，即遮阳性较好，可以适当地降低夏季空调费用，这种配片方式适用于夏热冬暖地区和大部分夏热冬冷地区；Low-E膜面位于第三表面时，遮阳系数较大，即允许更多的太阳能辐射进入室内，可以更有效地节约冬季采暖费用，这种配片方式主要使用于北方寒冷地区。
公开于该背景技术部分的信息仅仅旨在增加对本发明的总体背景的理解，而不应当被视为承认或以任何形式暗示该信息构成已为本领域一般技术人员所公知的现有技术。
发明内容
本发明的目的在于提供，从而克服现有技术的缺点具有多功能复合特性 的低辐射玻璃。
为实现上述目的，本发明提供了一种具有多功能复合特性的低辐射玻璃，其特征在于：低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。
优选地，上述技术方案中，底层电介质层是氧化铌层，底层电介质层的厚度为30-40nm，第一隔离层是金属铌层，第一隔离层的厚度为20-30nm。
优选地，上述技术方案中，第二隔离层是NiCr层，第二隔离层的厚度为30-40nm，顶层保护层是Si3N4层，顶层保护层的厚度为20-30nm。
优选地，上述技术方案中，在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为10-20sccm，射频电源频率为2-4kHz，溅射功率为100-150W，基片温度为150-200℃，第一AZO层厚度为5-10nm。
优选地，上述技术方案中，在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为10-20sccm，溅射功率为100-150W，基片温度为300-330℃，第一二氧化钒层厚度为10-15nm。
优选地，上述技术方案中，在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为30-40sccm，溅射功率为200-300W，基片温度为200-250℃，第一Au层厚度为3-5nm。
优选地，上述技术方案中，在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为20-30sccm，溅射功率为350-400W，基片温度为200-250℃，第一Cu层厚度为4-6nm。
优选地，上述技术方案中，在第一Cu层上沉积第一Pt层具体为：采用 射频溅射方法，靶材为金属Pt，氮气流量为100-120sccm，溅射功率为700-800W，基片温度为200-250℃，第一Pt层厚度为2-3nm。
优选地，上述技术方案中，在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为10-20sccm，射频电源频率为5-10kHz，溅射功率为200-300W，基片温度为200-250℃，第一AZO层厚度为5-10nm。
与现有技术相比，本发明具有如下有益效果：目前本领域已经提出了很多种低辐射玻璃。主流的低辐射玻璃是含银的低辐射玻璃，包括单银、双银、三银系列的低辐射玻璃，虽然含银低辐射玻璃工艺成熟，制备成本低，但是含银玻璃具有颜色深，透光颜色差的缺陷，导致建筑物外观不美观，同时导致室内光线昏暗压抑。为了克服含银低辐射玻璃的缺陷，现有技术还提出了不含银的低辐射玻璃，这种玻璃主要依靠AZO等材料的红外吸收特性来实现低辐射特性。现已发现，二氧化钒是一种存在低温相变的材料，利用其相变能够制造出智能节能玻璃，但是目前现有技术仍然不能做到将低辐射材料与二氧化钒进行有效组合，实现多功能复合节能玻璃。本发明为了克服现有技术的缺陷，提出了一种包含多种功能膜层的复合低辐射玻璃，本发明的低辐射玻璃结构合理，各层之间界面应力小，膜层结合紧密，脱层风险小，层间缺陷少，光学性能优异。
具体实施方式
提供以下实施方式是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
实施例1
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在 第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为30nm，第一隔离层是金属铌层，第一隔离层的厚度为20nm。第二隔离层是NiCr层，第二隔离层的厚度为30nm，顶层保护层是Si3N4层，顶层保护层的厚度为20nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为10sccm，射频电源频率为2kHz，溅射功率为100W，基片温度为150℃，第一AZO层厚度为5nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为10sccm，溅射功率为100W，基片温度为300℃，第一二氧化钒层厚度为10nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为30sccm，溅射功率为200W，基片温度为200℃，第一Au层厚度为3nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为20sccm，溅射功率为350W，基片温度为200℃，第一Cu层厚度为4nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为100sccm，溅射功率为700W，基片温度为200℃，第一Pt层厚度为2nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为10sccm，射频电源频率为5kHz，溅射功率为200W，基片温度为200℃，第一AZO层厚度为5nm。
实施例2
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为40nm，第一隔离层是金属铌层，第一隔离层的厚度为30nm。第二隔离层是NiCr层，第二隔离层的厚度为40nm，顶层保护层是Si3N4层，顶层保护层的厚度为30nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法， 靶材为贴Al片的氧化锌，氮气流量为20sccm，射频电源频率为4kHz，溅射功率为150W，基片温度为200℃，第一AZO层厚度为10nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为20sccm，溅射功率为150W，基片温度为330℃，第一二氧化钒层厚度为15nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为40sccm，溅射功率为300W，基片温度为250℃，第一Au层厚度为5nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为30sccm，溅射功率为400W，基片温度为250℃，第一Cu层厚度为6nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为120sccm，溅射功率为800W，基片温度250℃，第一Pt层厚度为3nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为20sccm，射频电源频率为10kHz，溅射功率为300W，基片温度为250℃，第一AZO层厚度为10nm。
实施例3
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为3kHz，溅射功率为120W，基片温度为170℃，第一AZO层厚度为8nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为15sccm，溅射功率为120W，基片温度为310℃，第一二氧化钒层厚度为12nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属 Au，氮气流量为35sccm，溅射功率为250W，基片温度为230℃，第一Au层厚度为4nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为25sccm，溅射功率为370W，基片温度为30℃，第一Cu层厚度为5nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为110sccm，溅射功率为750W，基片温度为230℃，第一Pt层厚度为2.5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为8kHz，溅射功率为250W，基片温度为230℃，第一AZO层厚度为8nm。
实施例4
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为30sccm，射频电源频率为5kHz，溅射功率为200W，基片温度为250℃，第一AZO层厚度为3nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为15sccm，溅射功率为120W，基片温度为310℃，第一二氧化钒层厚度为12nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为35sccm，溅射功率为250W，基片温度为230℃，第一Au层厚度为4nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为25sccm，溅射功率为370W，基片温度为30℃，第一Cu层厚度为5nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为110sccm，溅射功率为750W，基片温度为230℃， 第一Pt层厚度为2.5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为8kHz，溅射功率为250W，基片温度为230℃，第一AZO层厚度为8nm。
实施例5
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为3kHz，溅射功率为120W，基片温度为170℃，第一AZO层厚度为8nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为30sccm，溅射功率为200W，基片温度为350℃，第一二氧化钒层厚度为20nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为35sccm，溅射功率为250W，基片温度为230℃，第一Au层厚度为4nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为25sccm，溅射功率为370W，基片温度为30℃，第一Cu层厚度为5nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为110sccm，溅射功率为750W，基片温度为230℃，第一Pt层厚度为2.5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为8kHz，溅射功率为250W，基片温度为230℃，第一AZO层厚度为8nm。
实施例6
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层； 在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为3kHz，溅射功率为120W，基片温度为170℃，第一AZO层厚度为8nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为15sccm，溅射功率为120W，基片温度为310℃，第一二氧化钒层厚度为12nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为50sccm，溅射功率为350W，基片温度为300℃，第一Au层厚度为6nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为25sccm，溅射功率为370W，基片温度为30℃，第一Cu层厚度为5nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为110sccm，溅射功率为750W，基片温度为230℃，第一Pt层厚度为2.5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为8kHz，溅射功率为250W，基片温度为230℃，第一AZO层厚度为8nm。
实施例7
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚 度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为3kHz，溅射功率为120W，基片温度为170℃，第一AZO层厚度为8nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为15sccm，溅射功率为120W，基片温度为310℃，第一二氧化钒层厚度为12nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为35sccm，溅射功率为250W，基片温度为230℃，第一Au层厚度为4nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为40sccm，溅射功率为450W，基片温度为150℃，第一Cu层厚度为10nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为110sccm，溅射功率为750W，基片温度为230℃，第一Pt层厚度为2.5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为8kHz，溅射功率为250W，基片温度为230℃，第一AZO层厚度为8nm。
实施例8
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为3kHz，溅射功率为120W，基片温度为170℃，第一AZO层厚度为8nm。在第一AZO层上沉 积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为15sccm，溅射功率为120W，基片温度为310℃，第一二氧化钒层厚度为12nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为35sccm，溅射功率为250W，基片温度为230℃，第一Au层厚度为4nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为25sccm，溅射功率为370W，基片温度为30℃，第一Cu层厚度为5nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为50sccm，溅射功率为600W，基片温度为300℃，第一Pt层厚度为5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为8kHz，溅射功率为250W，基片温度为230℃，第一AZO层厚度为8nm。
实施例9
低辐射玻璃是由如下方法制备的：在玻璃基底上，沉积底层电介质层；在底层电介质层上，沉积第一隔离层；在第一隔离层上，沉积第一AZO层；在第一AZO层上，沉积第一二氧化钒层；在第一二氧化钒层上，沉积第一Au层；在第一Au层上，沉积第一Cu层；在第一Cu层上，沉积第一Pt层；在第一Pt层上，沉积第二AZO层；在第二AZO层上，沉积第二隔离层；在第二隔离层上，沉积顶层保护层。底层电介质层是氧化铌层，底层电介质层的厚度为35nm，第一隔离层是金属铌层，第一隔离层的厚度为25nm。第二隔离层是NiCr层，第二隔离层的厚度为35nm，顶层保护层是Si3N4层，顶层保护层的厚度为25nm。在第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为15sccm，射频电源频率为3kHz，溅射功率为120W，基片温度为170℃，第一AZO层厚度为8nm。在第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为15sccm，溅射功率为120W，基片温度为310℃，第一二氧化钒层厚度为12nm。在第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为35sccm，溅射功率为250W，基片温度为230℃，第一Au层厚度为4nm。在第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为 金属Cu，氮气流量为25sccm，溅射功率为370W，基片温度为30℃，第一Cu层厚度为5nm。在第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为110sccm，溅射功率为750W，基片温度为230℃，第一Pt层厚度为2.5nm。在第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为25sccm，射频电源频率为15kHz，溅射功率为350W，基片温度为300℃，第一AZO层厚度为15nm。
对实施例1-8进行透光率和传热系数的测试，测试方法参见有关国家标准，测试结果列于表1。
表1
  透光率 传热系数(W/m 2K)
实施例1 70％ 1.32
实施例2 67％ 1.31
实施例3 69％ 1.35
实施例4 24％ 1.59
实施例5 26％ 1.61
实施例6 29％ 1.70
实施例7 35％ 1.75
实施例8 34％ 1.84
实施例9 38％ 1.80
前述对本发明的具体示例性实施方案的描述是为了说明和例证的目的。这些描述并非想将本发明限定为所公开的精确形式，并且很显然，根据上述教导，可以进行很多改变和变化。对示例性实施例进行选择和描述的目的在于解释本发明的特定原理及其实际应用，从而使得本领域的技术人员能够实 现并利用本发明的各种不同的示例性实施方案以及各种不同的选择和改变。本发明的范围意在由权利要求书及其等同形式所限定。

Claims (9)

  1. 一种具有多功能复合特性的低辐射玻璃，其特征在于：所述低辐射玻璃是由如下方法制备的：
    在玻璃基底上，沉积底层电介质层；
    在所述底层电介质层上，沉积第一隔离层；
    在所述第一隔离层上，沉积第一AZO层；
    在所述第一AZO层上，沉积第一二氧化钒层；
    在所述第一二氧化钒层上，沉积第一Au层；
    在所述第一Au层上，沉积第一Cu层；
    在所述第一Cu层上，沉积第一Pt层；
    在所述第一Pt层上，沉积第二AZO层；
    在所述第二AZO层上，沉积第二隔离层；
    在所述第二隔离层上，沉积顶层保护层。
  2. 如权利要求1所述的低辐射玻璃，其特征在于：所述底层电介质层是氧化铌层，所述底层电介质层的厚度为30-40nm，所述第一隔离层是金属铌层，所述第一隔离层的厚度为20-30nm。
  3. 如权利要求1所述的低辐射玻璃，其特征在于：所述第二隔离层是NiCr层，所述第二隔离层的厚度为30-40nm，所述顶层保护层是Si3N4层，所述顶层保护层的厚度为20-30nm。
  4. 如权利要求1所述的低辐射玻璃，其特征在于：在所述第一隔离层上沉积第一AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为10-20sccm，射频电源频率为2-4kHz，溅射功率为100-150W，基片温度为150-200℃，所述第一AZO层厚度为5-10nm。
  5. 如权利要求1所述的低辐射玻璃，其特征在于：在所述第一AZO层上沉积第一二氧化钒层具体为：采用射频溅射方法，靶材为金属V，氧气流量为10-20sccm，溅射功率为100-150W，基片温度为300-330℃，所述第一二氧化钒层厚度为10-15nm。
  6. 如权利要求1所述的低辐射玻璃，其特征在于：在所述第一二氧化钒层上沉积第一Au层具体为：采用射频溅射方法，靶材为金属Au，氮气流量为30-40sccm，溅射功率为200-300W，基片温度为200-250℃，所述第一Au层厚度为3-5nm。
  7. 如权利要求1所述的低辐射玻璃，其特征在于：在所述第一Au层上沉积第一Cu层具体为：采用射频溅射方法，靶材为金属Cu，氮气流量为20-30sccm，溅射功率为350-400W，基片温度为200-250℃，所述第一Cu层厚度为4-6nm。
  8. 如权利要求1所述的低辐射玻璃，其特征在于：在所述第一Cu层上沉积第一Pt层具体为：采用射频溅射方法，靶材为金属Pt，氮气流量为100-120sccm，溅射功率为700-800W，基片温度为200-250℃，所述第一Pt层厚度为2-3nm。
  9. 如权利要求1所述的低辐射玻璃，其特征在于：在所述第一Pt层上沉积第二AZO层具体为：采用射频溅射方法，靶材为贴Al片的氧化锌，氮气流量为10-20sccm，射频电源频率为5-10kHz，溅射功率为200-300W，基片温度为200-250℃，所述第一AZO层厚度为5-10nm。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112921273A (zh) * 2021-01-21 2021-06-08 电子科技大学 一种基于相变材料二氧化钒的动态热辐射制冷器件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095009A1 (de) * 1982-05-21 1983-11-30 W. Bloesch Ag Verfahren zur Herstellung eines verlötbaren Glasstücks
EP0622645A1 (en) * 1993-04-28 1994-11-02 The Boc Group, Inc. Thin film coating and method of marking
CN102673042A (zh) * 2012-04-26 2012-09-19 蒙特集团（香港）有限公司 一种新型宽幅遮阳材料及其制作方法
CN103910495A (zh) * 2012-12-31 2014-07-09 中国南玻集团股份有限公司 双银热致变色玻璃及其制备方法
CN104279780A (zh) * 2013-07-04 2015-01-14 北京有色金属研究总院 一种过渡金属氮化物吸热涂层
CN105800955A (zh) * 2014-12-31 2016-07-27 中国科学院广州能源研究所 一种热色智能膜及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008297177A (ja) * 2007-06-01 2008-12-11 Nippon Sheet Glass Co Ltd サーモクロミックガラスおよびサーモクロミック複層ガラス
CN101817644B (zh) * 2010-04-20 2012-08-29 中国科学院上海硅酸盐研究所 一种辐射率可调的二氧化钒基复合薄膜及其制备方法
CN102910837A (zh) * 2012-10-16 2013-02-06 中国科学院上海技术物理研究所 一种离线可钢化智能低辐射镀膜玻璃及其制备方法
CN106150290B (zh) * 2015-03-27 2018-04-10 中国科学院广州能源研究所 一种热色智能调光节能玻璃及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095009A1 (de) * 1982-05-21 1983-11-30 W. Bloesch Ag Verfahren zur Herstellung eines verlötbaren Glasstücks
EP0622645A1 (en) * 1993-04-28 1994-11-02 The Boc Group, Inc. Thin film coating and method of marking
CN102673042A (zh) * 2012-04-26 2012-09-19 蒙特集团（香港）有限公司 一种新型宽幅遮阳材料及其制作方法
CN103910495A (zh) * 2012-12-31 2014-07-09 中国南玻集团股份有限公司 双银热致变色玻璃及其制备方法
CN104279780A (zh) * 2013-07-04 2015-01-14 北京有色金属研究总院 一种过渡金属氮化物吸热涂层
CN105800955A (zh) * 2014-12-31 2016-07-27 中国科学院广州能源研究所 一种热色智能膜及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112921273A (zh) * 2021-01-21 2021-06-08 电子科技大学 一种基于相变材料二氧化钒的动态热辐射制冷器件

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