WO2019244700A1 - プラズマ処理装置及びプラズマエッチング方法 - Google Patents

プラズマ処理装置及びプラズマエッチング方法 Download PDF

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Publication number
WO2019244700A1
WO2019244700A1 PCT/JP2019/022981 JP2019022981W WO2019244700A1 WO 2019244700 A1 WO2019244700 A1 WO 2019244700A1 JP 2019022981 W JP2019022981 W JP 2019022981W WO 2019244700 A1 WO2019244700 A1 WO 2019244700A1
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Prior art keywords
region
negative
focus ring
substrate
plasma
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Ceased
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PCT/JP2019/022981
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English (en)
French (fr)
Japanese (ja)
Inventor
利文 永岩
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020207007028A priority Critical patent/KR102708348B1/ko
Priority to US16/646,290 priority patent/US11171007B2/en
Priority to JP2020502502A priority patent/JP7090149B2/ja
Priority to CN201980004531.9A priority patent/CN111095502B/zh
Publication of WO2019244700A1 publication Critical patent/WO2019244700A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Definitions

  • the exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a plasma etching method.
  • the plasma processing apparatus includes a chamber and a substrate support.
  • the substrate support is provided in the chamber.
  • the substrate support has a lower electrode.
  • a high frequency power supply is connected to the lower electrode.
  • a focus ring is mounted on the substrate support.
  • the substrate support supports a substrate mounted thereon. The substrate is disposed in a region surrounded by the focus ring.
  • Such a plasma processing apparatus is described in Patent Document 1.
  • the plasma processing apparatus described in Patent Literature 1 further includes a DC power supply.
  • the DC power supply is electrically connected to the focus ring to adjust the bias voltage of the focus ring.
  • a plasma processing apparatus includes a chamber, a substrate support, a high-frequency power supply, and a focus ring.
  • the substrate support has a lower electrode and is provided in the chamber.
  • the high-frequency power supply is electrically connected to the lower electrode.
  • the focus ring surrounds the substrate on the substrate support.
  • the focus ring has a first area and a second area.
  • the first area includes an inner upper surface of the focus ring.
  • the second region includes an outer upper surface of the focus ring.
  • the inner upper surface and the outer upper surface extend circumferentially around a central axis of the focus ring.
  • the inner upper surface extends closer to the central axis than the outer upper surface.
  • the focus ring is configured such that the absolute value of the negative DC bias potential in the first region becomes higher than the absolute value of the DC potential in the second region during generation of plasma in the chamber.
  • FIG. 1 schematically illustrates a plasma processing apparatus according to one exemplary embodiment.
  • FIG. 2 is an enlarged cross-sectional view showing a part of a focus ring according to one exemplary embodiment together with a part of a substrate support of the plasma processing apparatus shown in FIG. 1.
  • FIG. 3 is a diagram showing an example of plasma and a sheath when the focus ring shown in FIG. 2 is used.
  • FIG. 4 is a diagram illustrating an example of plasma and a sheath when a focus ring according to a reference example is used.
  • FIG. 2 is an enlarged cross-sectional view showing a part of a focus ring according to another exemplary embodiment together with a part of a substrate support of the plasma processing apparatus shown in FIG. 1.
  • FIG. 1 schematically illustrates a plasma processing apparatus according to one exemplary embodiment.
  • FIG. 2 is an enlarged cross-sectional view showing a part of a focus ring according to one exemplary embodiment together with a part of a substrate support of the plasma processing apparatus
  • FIG. 9 is an enlarged cross-sectional view showing a part of a focus ring according to still another exemplary embodiment, together with a part of a substrate support of the plasma processing apparatus shown in FIG. 1.
  • 3 is a flowchart illustrating a plasma etching method according to one exemplary embodiment.
  • 5 is a flowchart illustrating a method of determining a lower limit according to one exemplary embodiment.
  • FIG. 9A is a graph showing the results of the first experiment and the second experiment
  • FIG. 9B is a graph showing the results of the third experiment and the fourth experiment.
  • (C) is a graph showing the results of the fifth experiment and the sixth experiment. It is a graph which shows the result of the 7th experiment and the 8th experiment.
  • a plasma processing apparatus includes a chamber, a substrate support, a high-frequency power supply, and a focus ring.
  • the substrate support has a lower electrode and is provided in the chamber.
  • the high-frequency power supply is electrically connected to the lower electrode.
  • the focus ring surrounds the substrate on the substrate support.
  • the focus ring has a first area and a second area.
  • the first area includes an inner upper surface of the focus ring.
  • the second region includes an outer upper surface of the focus ring.
  • the inner upper surface and the outer upper surface extend circumferentially around a central axis of the focus ring.
  • the inner upper surface extends closer to the central axis than the outer upper surface.
  • the focus ring is configured such that the absolute value of the negative DC bias potential in the first region becomes higher than the absolute value of the DC potential in the second region during generation of plasma in the chamber.
  • the portion having a negative DC bias potential having a relatively high absolute value at the top surface of the focus ring during plasma generation is limited to a portion inside the top surface, i.e., the inside top surface. .
  • the DC bias potential on the inner upper surface it is possible to adjust the etching rate in the edge region of the substrate while suppressing the effect on the etching rate in the central region of the substrate.
  • the first region and the second region may be electrically isolated from each other.
  • the plasma processing apparatus may further include a DC power supply.
  • the DC power supply is configured to apply a negative DC voltage to the first region in order to apply a negative DC bias potential to the first region.
  • each of the first region and the second region may be conductive.
  • an insulator is provided between the first region and the second region.
  • the first region may include an inner region and an outer region.
  • the inner region and the outer region extend in the circumferential direction.
  • the inner region includes the inner upper surface and extends closer to the center axis of the focus ring than the outer region.
  • the second region is provided on the outer region via an insulator.
  • the first region is conductive and the second region may be formed from an insulator material.
  • the plasma processing apparatus may further include a first dielectric part and a second dielectric part.
  • the impedance of the first dielectric part is lower than the impedance of the second dielectric part.
  • Each of the first region and the second region has conductivity.
  • the first region is electrically connected to a high frequency power supply via a first dielectric part.
  • the second region is electrically connected to a high frequency power supply via a second dielectric part.
  • the inner top surface and the outer top surface extend along a plane orthogonal to the center axis of the focus ring.
  • the absolute value of the negative DC bias potential of the first region may be set to be equal to or greater than the lower limit.
  • the lower limit is predetermined so that the etching rate in the central region of the substrate does not substantially change when the negative DC bias potential in the first region has an absolute value equal to or greater than the lower limit.
  • a plasma etching method includes: i) generating plasma in a chamber of a plasma processing apparatus; and ii) generating a negative DC bias potential in a first region of a focus ring during generation of plasma. .
  • the plasma processing apparatus used in the plasma etching method is any one of the various embodiments described above.
  • the negative DC bias potential of the first region has an absolute value higher than the absolute value of the DC potential of the second region.
  • the step of generating the plasma and the step of generating the negative DC bias potential are performed in a state where the substrate is placed on the substrate support in order to etch the substrate by the chemical species from the plasma.
  • a method for determining a lower limit.
  • This method includes a step of obtaining a plurality of etching rates corresponding to a plurality of negative DC bias potentials using any one of the plasma processing apparatuses of the above-described various embodiments.
  • the sequence is repeated while sequentially setting the negative DC bias potential of the first region to the plurality of negative DC bias potentials.
  • the sequence includes a step of generating a plasma in the chamber and generating a negative DC bias potential in the first region of the focus ring, thereby etching the substrate placed on the substrate support.
  • the sequence further includes a step of obtaining an etching rate of a central region of the substrate in the step of etching the substrate, as an etching rate corresponding to the negative DC bias potential generated in the first region among the plurality of etching rates.
  • the method further includes the step of determining a lower limit of the absolute value of the negative DC bias potential of the first region.
  • the lower limit is determined using a relationship between a plurality of negative DC bias potentials and a plurality of etching rates respectively corresponding to the plurality of negative DC bias potentials.
  • the lower limit is determined so that the etching rate in the central region of the substrate does not substantially change when the negative DC bias potential in the first region has an absolute value equal to or greater than the lower limit.
  • a plasma etching method includes a step of obtaining a plurality of etching rates corresponding to a plurality of negative DC bias potentials using any one of the plasma processing apparatuses of the above-described various embodiments.
  • the sequence is repeated while sequentially setting the negative DC bias potential of the first region to the plurality of negative DC bias potentials.
  • the sequence includes a step of generating a plasma in the chamber and generating a negative DC bias potential in the first region of the focus ring, thereby etching the substrate placed on the substrate support.
  • the sequence further includes a step of obtaining an etching rate of a central region of the substrate in the step of etching the substrate, as an etching rate corresponding to the negative DC bias potential generated in the first region among the plurality of etching rates.
  • the plasma etching method further includes a step of determining a lower limit of the absolute value of the negative DC bias potential of the first region. The lower limit is determined using a relationship between a plurality of negative DC bias potentials and a plurality of etching rates respectively corresponding to the plurality of negative DC bias potentials. The lower limit is determined so that the etching rate in the central region of the substrate does not substantially change when the negative DC bias potential in the first region has an absolute value equal to or greater than the lower limit.
  • a plasma is generated in a chamber, and a negative DC bias potential having an absolute value equal to or larger than a lower limit value is generated in a first region of a focus ring, thereby placing the focus ring on a substrate support. And etching the substrate.
  • FIG. 1 is a view schematically showing a plasma processing apparatus according to one exemplary embodiment.
  • the plasma processing apparatus 1 shown in FIG. 1 is a capacitively-coupled plasma processing apparatus.
  • the plasma processing apparatus 1 includes a chamber 10.
  • the chamber 10 provides an internal space 10s therein.
  • chamber 10 includes a chamber body 12.
  • the chamber main body 12 has a substantially cylindrical shape.
  • the internal space 10s is provided in the chamber main body 12.
  • the chamber body 12 is made of, for example, aluminum.
  • the chamber body 12 is electrically grounded.
  • a plasma-resistant film is formed on the inner wall surface of the chamber body 12, that is, the wall surface defining the internal space 10s. This film may be a ceramic film such as a film formed by anodizing or a film formed from yttrium oxide.
  • a passage 12p is formed in the side wall of the chamber body 12.
  • the substrate W passes through the passage 12p when transported between the internal space 10s and the outside of the chamber 10.
  • a gate valve 12g is provided along the side wall of the chamber main body 12 to open and close the passage 12p.
  • a substrate support that is, a support 16 is provided in the internal space 10s.
  • the support 16 is provided in the chamber 10.
  • the support 16 is configured to support the substrate W placed thereon.
  • the support 16 is supported by the support 15.
  • the support 15 extends upward from the bottom of the chamber body 12.
  • the support 15 has a substantially cylindrical shape.
  • the support 15 is formed of an insulating material such as quartz.
  • the support 16 may have a lower electrode 18 and an electrostatic chuck 20.
  • the support 16 may further include an electrode plate 21.
  • the electrode plate 21 is formed of a conductive material such as aluminum, and has a substantially disk shape.
  • the lower electrode 18 is provided on the electrode plate 21.
  • the lower electrode 18 is formed of a conductive material such as aluminum, and has a substantially disk shape.
  • the lower electrode 18 is electrically connected to the electrode plate 21.
  • a flow path 18f is formed in the lower electrode 18.
  • the flow path 18f is a flow path for a heat exchange medium.
  • a heat exchange medium a liquid refrigerant or a refrigerant (for example, chlorofluorocarbon) that cools the lower electrode 18 by vaporization thereof is used.
  • a circulation device for the heat exchange medium (for example, a chiller unit) is connected to the flow path 18f. This circulation device is provided outside the chamber 10.
  • the heat exchange medium is supplied to the flow path 18f from the circulation device via the pipe 23a.
  • the heat exchange medium supplied to the flow path 18f is returned to the circulation device via the pipe 23b.
  • the electrostatic chuck 20 is provided on the lower electrode 18.
  • the electrostatic chuck 20 has a main body and electrodes.
  • the main body of the electrostatic chuck 20 is formed from a dielectric.
  • the main body of the electrostatic chuck 20 has a substantially disk shape.
  • the electrode of the electrostatic chuck 20 is a film-shaped electrode, and is provided in the main body of the electrostatic chuck 20.
  • a DC power supply is electrically connected to the electrodes of the electrostatic chuck 20.
  • the support 16 has a mounting area 20r.
  • the focus ring FR is mounted on the mounting area 20r.
  • the mounting area 20r is, for example, an outer peripheral area of the electrostatic chuck 20.
  • the focus ring FR has a ring shape, and extends in the circumferential direction around the center axis (the axis AX in the figure).
  • the substrate W is mounted on a central area (substrate mounting area) of the electrostatic chuck 20.
  • the focus ring FR surrounds the edge of the substrate W placed on the central region of the electrostatic chuck 20.
  • the plasma processing apparatus 1 may further include a gas supply line 25.
  • the gas supply line 25 supplies a heat transfer gas, for example, a He gas, from a gas supply mechanism between the upper surface of the electrostatic chuck 20 and the back surface (lower surface) of the substrate W.
  • the plasma processing apparatus 1 may further include a cylindrical portion 28 and an insulating portion 29.
  • the tubular portion 28 extends upward from the bottom of the chamber body 12.
  • the tubular portion 28 extends along the outer periphery of the support 15.
  • the tubular portion 28 is formed from a conductive material and has a substantially cylindrical shape.
  • the cylindrical portion 28 is electrically grounded.
  • the insulating part 29 is provided on the tubular part 28.
  • the insulating portion 29 is formed from a material having an insulating property.
  • the insulating part 29 is formed of ceramic such as quartz.
  • the insulating portion 29 has a substantially cylindrical shape.
  • the insulating portion 29 extends along the outer periphery of the electrode plate 21, the outer periphery of the lower electrode 18, and the outer periphery of the electrostatic chuck 20.
  • the plasma processing apparatus 1 further includes an upper electrode 30.
  • the upper electrode 30 is provided above the support 16.
  • the upper electrode 30 together with the member 32 closes the upper opening of the chamber body 12.
  • the member 32 has an insulating property.
  • the upper electrode 30 is supported on the upper part of the chamber main body 12 via the member 32.
  • the upper electrode 30 includes the top plate 34 and the support 36.
  • the lower surface of the top plate 34 defines an internal space 10s.
  • a plurality of gas discharge holes 34a are formed in the top plate 34. Each of the plurality of gas discharge holes 34a penetrates the top plate 34 in the plate thickness direction (vertical direction).
  • the top plate 34 is made of, for example, but not limited to, silicon.
  • the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum member. This film may be a ceramic film such as a film formed by anodizing or a film formed from yttrium oxide.
  • the support 36 supports the top plate 34 detachably.
  • the support 36 is formed from a conductive material such as aluminum.
  • a gas diffusion chamber 36 a is provided inside the support 36.
  • a plurality of gas holes 36b extend downward from the gas diffusion chamber 36a.
  • the plurality of gas holes 36b communicate with the plurality of gas discharge holes 34a, respectively.
  • the support 36 has a gas introduction port 36c formed therein.
  • the gas introduction port 36c is connected to the gas diffusion chamber 36a.
  • a gas supply pipe 38 is connected to the gas introduction port 36c.
  • a gas source group 40 is connected to the gas supply pipe 38 via a valve group 41, a flow controller group 42, and a valve group 43.
  • the gas source group 40, the valve group 41, the flow controller group 42, and the valve group 43 constitute a gas supply unit.
  • the gas source group 40 includes a plurality of gas sources.
  • Each of the valve group 41 and the valve group 43 includes a plurality of valves (for example, open / close valves).
  • the flow controller group 42 includes a plurality of flow controllers.
  • Each of the plurality of flow controllers of the flow controller group 42 is a mass flow controller or a pressure control type flow controller.
  • Each of the plurality of gas sources of the gas source group 40 is connected to the gas supply pipe 38 via a corresponding valve of the valve group 41, a corresponding flow controller of the flow controller group 42, and a corresponding valve of the valve group 43. It is connected.
  • the plasma processing apparatus 1 can supply the gas from one or more gas sources selected from the plurality of gas sources in the gas source group 40 to the internal space 10s at a flow rate individually adjusted.
  • a baffle plate 48 is provided between the cylindrical portion 28 and the side wall of the chamber body 12.
  • the baffle plate 48 can be configured by, for example, coating a member made of aluminum with ceramic such as yttrium oxide.
  • the baffle plate 48 has a large number of through holes.
  • an exhaust pipe 52 is connected to the bottom of the chamber body 12.
  • An exhaust device 50 is connected to the exhaust pipe 52.
  • the exhaust device 50 has a pressure controller such as an automatic pressure control valve, and a vacuum pump such as a turbo molecular pump, and can reduce the pressure in the internal space 10s.
  • the plasma processing apparatus 1 may further include a high frequency power supply 61.
  • the high-frequency power supply 61 is a power supply that generates high-frequency power HF for plasma generation.
  • the high frequency power HF has a frequency in the range of 27 to 100 MHz, for example, a frequency of 40 MHz or 60 MHz.
  • the high frequency power supply 61 is connected to the lower electrode 18 via the matching unit 63 and the electrode plate 21 to supply the high frequency power HF to the lower electrode 18.
  • the matching unit 63 has a matching circuit for matching the output impedance of the high-frequency power supply 61 with the impedance on the load side (the lower electrode 18 side).
  • the high-frequency power supply 61 may not be electrically connected to the lower electrode 18, but may be connected to the upper electrode 30 via the matching device 63.
  • the plasma processing apparatus 1 further includes a high frequency power supply 62.
  • the high-frequency power supply 62 is a power supply that generates bias high-frequency power for drawing ions into the substrate W, that is, high-frequency power LF.
  • the frequency of the high frequency power LF is lower than the frequency of the high frequency power HF.
  • the frequency of the high-frequency power LF is a frequency in the range of 400 kHz to 13.56 MHz, for example, 400 kHz.
  • the high frequency power supply 62 is connected to the lower electrode 18 via the matching unit 64 and the electrode plate 21 to supply the high frequency power LF to the lower electrode 18.
  • the matching unit 64 has a matching circuit for matching the output impedance of the high-frequency power supply 62 with the impedance on the load side (the lower electrode 18 side).
  • gas is supplied to the internal space 10s.
  • the supply of the high frequency power HF and the high frequency power LF or the high frequency power LF excites the gas in the internal space 10s.
  • plasma is generated in the internal space 10s.
  • the substrate W is processed by a chemical species such as ions and / or radicals from the generated plasma.
  • FIG. 2 is an enlarged cross-sectional view showing a part of a focus ring according to one exemplary embodiment together with a part of a substrate support of the plasma processing apparatus shown in FIG.
  • the focus ring FRA shown in FIG. 2 can be used as the focus ring FR in the plasma processing apparatus 1.
  • the focus ring FRA has a first region R1 and a second region R2.
  • the upper surface TS of the focus ring FRA includes an inner upper surface ITS and an outer upper surface OTS.
  • the first region R1 includes the inner upper surface ITS.
  • the second region R2 includes the outer upper surface OTS.
  • the inner upper surface ITS and the outer upper surface OTS extend in the circumferential direction (the direction CD in the figure) around the central axis (the axis AX in the figure) of the focus ring FRA.
  • the inner upper surface ITS extends closer to the center axis of the focus ring FRA than the outer upper surface OTS.
  • the inner upper surface ITS extends radially from the inner end surface of the focus ring FRA facing the edge of the substrate W.
  • the width of the inner upper surface ITS in the radial direction is, for example, 3 mm or more and 30 mm or less.
  • the inner upper surface ITS and the outer upper surface OTS extend along a plane orthogonal to the central axis of the focus ring FRA. That is, in one embodiment, the inner upper surface ITS and the outer upper surface OTS have the same horizontal level as each other.
  • the focus ring FRA is configured such that the absolute value of the negative DC bias potential in the first region R1 is higher than the absolute value of the DC potential in the second region R2 during generation of plasma in the chamber 10. ing.
  • the first region R1 and the second region R2 are electrically separated from each other.
  • each of the first region R1 and the second region R2 has conductivity, and the insulator IS is provided between the first region R1 and the second region R2.
  • Each of the first region R1 and the second region R2 is formed of, for example, silicon or silicon carbide (SiC).
  • the first region R1 includes an inner region IR and an outer region OR.
  • the inner region IR and the outer region OR extend in the circumferential direction (direction CD in the figure).
  • the inner region IR includes an inner upper surface ITS.
  • the inner region IR extends closer to the center axis (the axis AX in the figure) of the focus ring FR than the outer region OR.
  • the second region R2 is provided on the outer region OR via the insulator IS.
  • the plasma processing apparatus 1 may further include a DC power supply 72.
  • the DC power supply 72 is configured to apply a negative DC voltage to the first region R1 in order to apply a negative DC bias potential to the first region R1.
  • the DC power supply 72 is electrically connected to the first region R1.
  • the DC power supply 72 is electrically connected to the lower electrode 18 via the power supply line of the high-frequency power LF and the electrode plate 21. As shown in FIG. 2, the lower electrode 18 is electrically connected to the first region R1 via the conductor 22.
  • the DC power supply 72 may be electrically connected to the first region R1 without passing through at least one of the power supply line of the high-frequency power LF, the electrode plate 21, and the lower electrode 18.
  • the DC power supply 72 may be connected to the first region R1 via another electric path.
  • the absolute value of the negative DC bias potential of the first region R1 may be set to be equal to or more than the lower limit.
  • the lower limit is predetermined so that the etching rate in the central region of the substrate W does not substantially change when the negative DC bias potential in the first region R1 has an absolute value equal to or greater than the lower limit.
  • the plasma processing apparatus 1 may further include a measurement circuit 70.
  • the measurement circuit 70 has a voltage sensor 70v.
  • the measurement circuit 70 is electrically connected to the lower electrode 18 via a power supply line for the high-frequency power LF and the electrode plate 21.
  • the measurement circuit 70 may be electrically connected to the first region R1 without passing through at least one of the power supply line of the high-frequency power LF, the electrode plate 21, and the lower electrode 18.
  • the measurement circuit 70 may be connected to the first region R1 via another electric path.
  • the measurement circuit 70 has a voltage sensor 70v.
  • the measurement circuit 70 may further include a current sensor 70i.
  • the measurement circuit 70 has a voltage divider.
  • the voltage divider is a resistor divider.
  • the voltage sensor 70v is connected to a node between two resistors of the resistor voltage dividing circuit.
  • the voltage sensor 70v is configured to acquire a measured value of the voltage at the node, that is, a measured value representing the DC potential of the first region R1.
  • the measurement circuit 70 may further include a current sensor 70i.
  • the current sensor 70i is configured to acquire a measured value of a current flowing through an electric path connecting the first region R1 and the measurement circuit 70.
  • the measuring circuit 70 and the DC power supply 72 are configured to be selectively connected to the first region R1.
  • the plasma processing apparatus 1 includes one or more switching elements.
  • the plasma processing apparatus 1 includes a switching element 70s and a switching element 72s for selectively connecting one of the measurement circuit 70 and the DC power supply 72 to the first region R1.
  • Each of the switching element 70s and the switching element 72s may be, for example, a field effect transistor.
  • the switching element 70s is turned on, the end of the voltage dividing circuit of the measuring circuit 70 opposite to the ground is connected to the first region R1.
  • the switching element 72s is turned on, the DC power supply 72 is connected to the first region R1.
  • the switching element 70s and the switching element 72s are controlled by the control unit MC such that when one of the switching element 70s and the switching element 72s is in the conductive state, the other is in the non-conductive state.
  • the plasma processing apparatus 1 does not need to include the measurement circuit 70, the switching element 70s, and the switching element 72s.
  • the DC power supply 72 can be directly connected to the power supply line of the high-frequency power LF.
  • the plasma processing apparatus 1 may further include a high-frequency cutoff filter 74.
  • the high-frequency cutoff filter 74 is provided to prevent high-frequency power from flowing into the measurement circuit 70 and the DC power supply 72.
  • the high-frequency cutoff filter 74 has, for example, a capacitor.
  • One end of the capacitor of the high-frequency cutoff filter 74 is connected to an electric path between the first region R1 and the voltage dividing circuit of the measurement circuit 70 and between the first region R1 and the DC power supply 72.
  • the other end of the capacitor of the high-frequency cutoff filter 74 is connected to the ground.
  • the plasma processing apparatus 1 further includes a control unit MC.
  • the control unit MC is a computer including a processor, a storage device, an input device, a display device, and the like, and controls each unit of the plasma processing apparatus 1. Specifically, the control unit MC executes a control program stored in the storage device and controls each unit of the plasma processing apparatus 1 based on the recipe data stored in the storage device. Under the control of the control unit MC, the plasma processing apparatus 1 can execute the process specified by the recipe data. Further, under the control of the control unit MC, the plasma processing apparatus 1 can execute the method according to various embodiments.
  • FIG. 3 is a diagram showing an example of plasma and a sheath when the focus ring shown in FIG. 2 is used.
  • FIG. 4 is a diagram illustrating an example of plasma and a sheath when the focus ring of the reference example is used.
  • the focus ring FRT shown in FIG. 4 has conductivity.
  • the focus ring FRT is not divided into a first region R1 and a second region R2. That is, the upper surface of the focus ring FRT is a continuous plane extending from the inner edge to the outer edge.
  • the inner edge of the upper surface of the focus ring FRT has the same diameter as the inner edge of the inner upper surface ITS of the focus ring FRA.
  • the outer edge of the upper surface of the focus ring FRT has the same diameter as the diameter of the outer edge of the outer upper surface OTS of the focus ring FRA.
  • the focus ring FRT When a negative DC voltage is applied from the DC power supply 72 to the focus ring FRT mounted on the mounting area 20r, the focus ring FRT is located above the focus ring FRT as compared with the sheath SH above the substrate W, as shown in FIG. Becomes thicker. Since the radial width of the upper surface of the focus ring FRT is relatively large, the gap between the sheath SH and the upper electrode 30 (the top of the chamber 10) has a relatively large width in the radial direction above the focus ring FRT. In the region that has it. As a result, the diffusion of the plasma PL in the radial direction is suppressed, and the density of the plasma PL increases above the central region of the substrate W. Therefore, when the negative DC bias potential of the focus ring FRT is adjusted, the etching rate in the central region of the substrate W changes.
  • FIG. 5 is an enlarged cross-sectional view showing a part of a focus ring according to another exemplary embodiment together with a part of a substrate support of the plasma processing apparatus shown in FIG.
  • the focus ring FRB shown in FIG. 5 can be used as the focus ring FR in the plasma processing apparatus 1.
  • differences between the focus ring FRB and the focus ring FRA will be described.
  • each of the first region R1 and the second region R2 has a ring shape.
  • the first region R1 extends closer to the center axis (the axis AX in the figure) of the focus ring FRB than the second region R2.
  • the first region R1 of the focus ring FRB has conductivity, and is formed of, for example, silicon or silicon carbide (SiC).
  • the second region R2 of the focus ring FRB is formed from an insulator material.
  • a DC power supply 72 is electrically connected to the first region R1 of the focus ring FRB.
  • the absolute value of the DC bias potential of the negative polarity of the first region R1 of the focus ring FRB can be set to a lower limit or more.
  • the lower limit is predetermined so that the etching rate in the central region of the substrate W does not substantially change when the negative DC bias potential in the first region R1 has an absolute value equal to or greater than the lower limit.
  • FIG. 6 is an enlarged sectional view showing a part of a focus ring according to still another exemplary embodiment together with a part of a substrate support of the plasma processing apparatus shown in FIG.
  • the focus ring FRC shown in FIG. 6 can be used as the focus ring FR in the plasma processing apparatus 1.
  • differences between the focus ring FRC and the focus ring FRA will be described.
  • each of the first region R1 and the second region R2 has a ring shape.
  • the first region R1 extends closer to the center axis (the axis AX in the figure) of the focus ring FRC than the second region R2.
  • Each of the first region R1 and the second region R2 of the focus ring FRC has conductivity, and is formed of, for example, silicon or silicon carbide (SiC).
  • the first region R1 is mounted on the mounting region 20r via the first dielectric portion D1.
  • the second region R2 is mounted on the mounting region 20r via the second dielectric portion D2.
  • the first dielectric portion D1 and the second dielectric portion D2 are formed of the same dielectric material or different dielectric materials.
  • the impedance of the first dielectric part D1 is lower than the impedance of the second dielectric part D2.
  • the high frequency power supply 62 is electrically connected to the first region R1 of the focus ring FRC via the first dielectric part D1. Further, the high frequency power supply 62 is electrically connected to the second region R2 of the focus ring FRC via the second dielectric portion D2. In one example, the high-frequency power supply 62 is electrically connected to the first region R1 via the electrode plate 21, the lower electrode 18, the conductor 221, and the first dielectric portion D1. The high-frequency power supply 62 is electrically connected to the second region R2 via the electrode plate 21, the lower electrode 18, the conductor 222, and the second dielectric portion D2.
  • a high-frequency power supply different from the high-frequency power supply 62 may be electrically connected to the first region R1 of the focus ring FRC via the first dielectric portion D1. Further, the another high-frequency power supply may be electrically connected to the second region R2 of the focus ring FRC via the second dielectric portion D2.
  • the first region R1 of the focus ring FRC is electrically connected to the high-frequency power supply 62 (or another high-frequency power supply) via the first dielectric portion D1 having a relatively low impedance.
  • the second region R2 of the focus ring FRC is electrically connected to a high frequency power supply 62 (or another high frequency power supply) via a second dielectric portion D2 having a relatively high impedance. Therefore, the absolute value of the negative DC bias potential in the first region R1 of the focus ring FRC is higher than the absolute value of the negative DC bias potential in the second region R2 of the focus ring FRC.
  • the plasma processing apparatus 1 may not include the DC power supply 72. Further, the plasma processing apparatus 1 may not include the measurement circuit 70.
  • the absolute value of the negative DC bias potential of the first region R1 of the focus ring FRC can be set to a lower limit or more.
  • the lower limit is predetermined so that the etching rate in the central region of the substrate W does not substantially change when the negative DC bias potential in the first region R1 has an absolute value equal to or greater than the lower limit.
  • FIG. 7 is a flowchart illustrating a plasma etching method according to one exemplary embodiment.
  • the plasma etching method (hereinafter, referred to as “method MT”) illustrated in FIG. 7 will be described by taking a case where the plasma processing apparatus 1 is used as an example.
  • the method MT includes a step STE.
  • step STE the substrate is etched.
  • the method MT may further include the step STP.
  • Step STP is executed before execution of step STE.
  • step STP the lower limit of the negative DC bias potential of the first region R1 is determined. Details of the process STP will be described later.
  • the process STE includes a process ST1 and a process ST2. Steps ST1 and ST2 are performed in a state where the substrate is placed on the support 16 in order to etch the substrate with a chemical species from the plasma.
  • the substrate is arranged on a central region of the electrostatic chuck 20 and in a region surrounded by the focus ring FR.
  • step ST1 plasma is generated in the chamber 10. Specifically, in step ST1, a gas is supplied from the gas supply unit into the chamber 10. In step ST1, the pressure in the chamber 10 is set to the specified pressure by the exhaust device 50. In step ST1, high-frequency power HF and high-frequency power LF or high-frequency power LF are supplied. In step ST1, the gas is excited in the chamber 10. As a result, plasma is generated from the gas in the chamber 10.
  • step ST2 is executed during the generation of the plasma in the step ST1.
  • a negative DC bias potential having an absolute value higher than the absolute value of the DC potential of the second region R2 is generated in the first region R1 of the focus ring FR.
  • the absolute value of the negative DC bias potential of the first region R1 is set within a range equal to or greater than the lower limit determined in step STP.
  • step ST2 When the focus ring FRA or the focus ring FRB is used as the focus ring FR, a negative DC voltage from the DC power supply 72 is applied to the first region R1 in step ST2.
  • the focus ring FRC is used as the focus ring FR
  • step ST2 the high-frequency power LF from the high-frequency power supply 62 is supplied to the first region R1 via the first dielectric portion D1, and It is supplied to the second region R2 via the body part D2.
  • high-frequency power from a high-frequency power supply different from the high-frequency power supply 62 is supplied to the first region R1 via the first dielectric portion D1, and is supplied to the first region R1 via the second dielectric portion D2. It may be supplied to the two regions R2.
  • the substrate is etched by a chemical species such as ions from plasma.
  • a chemical species such as ions from plasma.
  • the absolute value of the negative DC bias potential of the first region R1 during plasma generation may be controlled within the range of the lower limit or more. By controlling the absolute value of the negative DC bias potential of the first region R1 within a range not less than the lower limit, the position of the interface between the sheath and the plasma above the first region R1 (position in the height direction) can be changed. It is possible to control.
  • the absolute value of the negative DC bias potential of the first region R1 during plasma generation is set with reference to a reference value (or an initial value) larger than the lower limit.
  • a reference value or an initial value
  • the absolute value of the negative DC bias potential of the first region R1 during plasma generation is set to a value lower than the reference value
  • the position of the interface between the sheath and the plasma above the first region R1 becomes the reference position.
  • the reference position is the position of the interface between the sheath and the plasma above the first region R1 when the absolute value of the negative DC bias potential of the first region R1 during plasma generation is set to the reference value.
  • the absolute value of the negative DC bias potential of the first region R1 during plasma generation is set to a value higher than the reference value, the position of the interface between the sheath and the plasma above the first region R1 becomes Becomes higher than the reference position.
  • the angle of incidence of ions with respect to the edge region of the substrate can be controlled. Therefore, by controlling the absolute value of the DC bias potential of the negative polarity of the first region R1 during the plasma generation within the range of the lower limit or more, the influence on the etching rate in the central region of the substrate is suppressed, and the edge of the substrate is controlled. It is possible to control the angle of incidence of ions on the region.
  • the absolute value of the negative DC bias potential of the first region R1 during plasma generation is set to a value higher than the initial value.
  • the initial value is a value set as the absolute value of the DC bias potential of the negative polarity of the first region R1 during plasma generation when the focus ring FR that has not been consumed is used, and is a value equal to or more than the above lower limit value. It is.
  • the absolute value of the DC bias potential of the negative polarity of the first region R1 during plasma generation is determined by the progress of consumption of the focus ring FR (reduction of the thickness of the focus ring FR or reduction of the position of the inner upper surface ITS in the height direction). Is increased from the initial value.
  • the focus ring FR When the focus ring FR is worn out and the height position of the inner upper surface ITS becomes lower, the height position of the interface between the sheath and the plasma becomes lower above the inner upper surface ITS. As a result, ions are obliquely incident on the edge region of the substrate.
  • the focus ring FR when the focus ring FR is depleted, the absolute value of the negative DC bias potential of the first region R1 during plasma generation is increased from the initial value, so that the sheath is located above the inner upper surface ITS.
  • the position of the interface with the plasma in the height direction is corrected. Therefore, according to this example, when the focus ring FR is worn, it is possible to correct the incident direction of ions to the edge region of the substrate in the vertical direction while suppressing the influence on the etching rate in the central region of the substrate. it can.
  • FIG. 8 is a flowchart illustrating a method of determining a lower limit according to one exemplary embodiment.
  • step STP of method MT method MTD shown in FIG. 8 is executed.
  • the method MTD includes a step of obtaining a plurality of etching rates respectively corresponding to a plurality of negative DC bias potentials.
  • the sequence SQ is repeated while sequentially setting the negative DC bias potential of the first region R1 to the plurality of negative DC bias potentials.
  • the sequence SQ includes a step ST11 and a step ST12.
  • Step ST11 is a step similar to step STE.
  • plasma is generated from the gas in the chamber 10 (step ST111), and the set negative DC bias potential is generated in the first region R1 (step ST112).
  • the substrate is etched by a chemical species such as ions from the generated plasma.
  • the conditions for generating plasma in step ST111 can be the same as the conditions for generating plasma in step ST1.
  • step ST12 the etching rate of the central region of the substrate etched in step ST11 is determined.
  • the etching rate is obtained by dividing the depth of the opening formed in the substrate by the processing time of step ST11.
  • the etching rate obtained in step ST12 is used as a set bias potential among a plurality of etching rates, that is, an etching rate corresponding to a negative DC bias potential generated in first region R1 in step ST11.
  • step ST13 it is determined whether or not to end the execution of the sequence.
  • step ST13 if there is a DC bias potential not used in the sequence SQ among a plurality of negative DC bias potentials, it is determined that the execution of the sequence is not to be terminated. If the execution of the sequence is not to be terminated, the DC bias potential not used in the sequence SQ among the plurality of negative DC bias potentials is used, and the sequence SQ is executed again.
  • the plurality of negative DC bias potentials and the plurality of etching rates respectively corresponding to the plurality of negative DC bias potentials are used. Is obtained.
  • step ST14 the lower limit value of the absolute value of the negative DC bias potential of the first region R1 is determined.
  • the lower limit value is determined using a relationship obtained by repeating the sequence SQ, that is, a relationship between a plurality of negative DC bias potentials and a plurality of etching rates respectively corresponding to the plurality of negative DC bias potentials. You.
  • the lower limit is determined so that the etching rate in the central region of the substrate does not substantially change when the negative DC bias potential in the first region R1 has an absolute value equal to or greater than the lower limit.
  • the lower limit is such that when the negative DC bias potential in the first region R1 has an absolute value equal to or greater than the lower limit, the etching rate in the central region of the substrate is within a predetermined range. It is determined. The lower limit thus determined is used for determining the negative DC bias potential of the first region R1 in the step ST2.
  • the plasma processing apparatus including the focus ring FRA, the focus ring FRB, or the focus ring FRC is not limited to a capacitively coupled plasma processing apparatus, and may be any type of plasma processing apparatus.
  • any type of plasma processing apparatus other than the plasma processing apparatus 1 may be used. Examples of such a plasma processing apparatus include an inductively coupled plasma processing apparatus and a plasma processing apparatus that generates plasma using a surface wave such as a microwave.
  • the temperature of the focus ring FRA, the focus ring FRB, or the focus ring FRC may be adjusted.
  • a heater may be provided inside the electrostatic chuck 20. This heater may extend over the entire area of the electrostatic chuck 20 so as to heat both the substrate W and the focus ring. Alternatively, the heater may be provided only directly below the mounting area 20r so that only the focus ring can be heated. Further, a first heater for heating the substrate W and a second heater for heating the focus ring may be provided. Furthermore, when heating the focus ring FRB or the focus ring FRC, a heater may be provided only directly below the first region R1 or the second region R2 so that only the first region R1 or the second region R2 can be heated. . Alternatively, when heating the focus ring FRB or the focus ring FRC, another heater may be provided directly below the first region R1 and the second region R2.
  • a heat transfer sheet may be provided on the mounting area 20r, and the focus ring FRA may be mounted on the mounting area 20r via the heat transfer sheet.
  • the first dielectric portion D1 and / or the second dielectric portion D2 may be formed of an insulating heat transfer sheet.
  • the heating is exemplified as the focus ring temperature adjustment
  • the focus ring temperature adjustment may be cooling.
  • a cooling member such as a Peltier element may be provided instead of or together with the heater.
  • the above-described focus ring FRT was mounted on the mounting area 20r.
  • the outer area in the radial direction of the entire area on the upper surface of the focus ring FRT was covered with the insulating tape.
  • the width in the radial direction of the exposed inner region of the entire region of the upper surface of the focus ring FRT was 1 cm.
  • the inner area in the radial direction of the entire area on the upper surface of the focus ring FRT was covered with the insulating tape.
  • the width in the radial direction of the exposed outer region of the entire upper surface of the focus ring FRT was 1 cm.
  • the substrate was placed on the electrostatic chuck 20, and the silicon oxide film of the substrate was etched.
  • a fluorocarbon gas was used as an etching gas.
  • high-frequency power HF and high-frequency power LF were supplied to the lower electrode.
  • no DC voltage from the DC power supply 72 was applied to the focus ring FRT.
  • a DC voltage of ⁇ 500 V was applied from the DC power supply 72 to the focus ring FRT.
  • FIG. 9A is a graph showing the results of the first experiment and the second experiment
  • FIG. 9B is a graph showing the results of the third experiment and the fourth experiment
  • (C) is a graph showing the results of the fifth experiment and the sixth experiment.
  • the horizontal axis indicates the distance from the center of the substrate
  • the vertical axis indicates the silicon oxide film of the substrate. Shows the etching rate.
  • the etching rate in the central region of the substrate obtained in the second experiment was significantly different from the etching rate in the central region of the substrate obtained in the first experiment. Therefore, it was confirmed that adjusting the negative bias voltage of the focus ring FRT exposing the entire upper surface thereof changed the etching rate in the central region of the substrate.
  • the etching rate obtained in the sixth experiment changes relatively largely at all positions in the radial direction of the substrate with respect to the etching rate obtained in the fifth experiment.
  • the bias voltage of the negative polarity of the focus ring FRT exposing only the radially outer region of the upper surface was adjusted, the etching rate changed relatively largely at all positions in the radial direction of the substrate.
  • the etching rate in the edge region of the substrate obtained in the fourth experiment was significantly different from the etching rate in the edge region of the substrate obtained in the third experiment. . Further, the difference between the etching rate in the central region of the substrate determined in the fourth experiment and the etching rate in the central region of the substrate determined in the third experiment was relatively small.
  • the focus ring used in each of the third experiment and the fourth experiment has a negative DC bias potential having an absolute value larger than the absolute value of the DC potential in an outer region on the upper surface thereof. It is configured to occur in the inner area. Therefore, by using any one of the focus rings FRA, FRB, and FRC, it is possible to control the etching rate in the edge region of the substrate while suppressing the effect on the etching rate in the central region of the substrate. confirmed.
  • the focus ring FRA was mounted on the mounting region 20r, and the silicon oxide films of the plurality of substrates were etched in order.
  • negative DC voltages applied from the DC power supply 72 to the first region R1 were set to different DC voltages.
  • the focus ring FRT was mounted on the mounting region 20r, and the silicon oxide films on the plurality of substrates were etched in order.
  • negative DC voltages applied from the DC power supply 72 to the first region R1 were set to different DC voltages.
  • a fluorocarbon gas was used as an etching gas.
  • high-frequency power HF and high-frequency power LF were supplied to the lower electrode.
  • FIG. 10 is a graph showing the results of the seventh experiment and the eighth experiment. In FIG.
  • the horizontal axis represents the DC voltage applied from the DC power supply 72 to the focus ring
  • the vertical axis represents the rate of change of the etching rate in the central region of the substrate.
  • the lower limit can be set so that the etching rate in the central region of the substrate W does not substantially change.
  • the absolute value of the negative DC bias potential applied to the first region R1 is adjusted within the range not less than the lower limit, it is possible to suppress the influence on the etching rate in the central region of the substrate. confirmed.
  • SYMBOLS 1 Plasma processing apparatus, 10 ... Chamber, 16 ... Support base, 18 ... Lower electrode, 62 ... High frequency power supply, FR ... Focus ring, R1: 1st area, R2 ... 2nd area, ITS ... Inside upper surface, OTS ... Outside Top side.

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