WO2019223198A1 - Oled背板的制作方法及oled背板 - Google Patents

Oled背板的制作方法及oled背板 Download PDF

Info

Publication number
WO2019223198A1
WO2019223198A1 PCT/CN2018/106580 CN2018106580W WO2019223198A1 WO 2019223198 A1 WO2019223198 A1 WO 2019223198A1 CN 2018106580 W CN2018106580 W CN 2018106580W WO 2019223198 A1 WO2019223198 A1 WO 2019223198A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
oled
tft
emitting functional
Prior art date
Application number
PCT/CN2018/106580
Other languages
English (en)
French (fr)
Inventor
周星宇
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US16/099,183 priority Critical patent/US11063246B2/en
Publication of WO2019223198A1 publication Critical patent/WO2019223198A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • the present invention relates to the field of display technology, and in particular, to a method for manufacturing an OLED back plate and an OLED back plate.
  • the flat panel display device has many advantages such as a thin body, power saving, and no radiation, and has been widely used.
  • Existing flat panel display devices mainly include liquid crystal display devices (Liquid Crystal Display, LCD) and organic electroluminescence display devices (Organic Light Emitting Display, OLED).
  • LCD display devices are widely used in mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers and other consumer electronics due to their advantages such as high picture quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • OLED display device is an active light-emitting display, which has the advantages of self-illumination, high contrast, wide viewing angle, fast response, high luminous efficiency, low operating voltage, ultra-thin and thin, etc., has better color display image quality, wider viewing range and Greater design flexibility.
  • TFTs Thin film transistors are an important part of flat panel display devices. They can be formed on glass or plastic substrates. They are often used as switching devices and driving devices in LCD display devices and OLED display devices.
  • Metal-oxide-semiconductor TFT technology is currently a hot technology. Because metal-oxide-semiconductor TFTs have higher electron mobility, and compared with low-temperature polysilicon (LTPS), metal-oxide-semiconductor TFTs have a simpler process and are different from amorphous silicon (a -Si) TFT has higher compatibility compared to the manufacturing process, can be used in LCD display devices and OLED display devices, is suitable for large and small size displays, has good application development prospects, and is currently popular in the industry.
  • a -Si amorphous silicon
  • the threshold voltage of the metal oxide semiconductor TFTs is significantly negatively shifted.
  • An existing improved method is to place the metal oxide semiconductor materials under the active layer.
  • a metal light-shielding layer is provided to eliminate the negative drift of the TFT threshold voltage caused by light.
  • the metal light-shielding layer is not connected to other charged structure layers in the TFT structure, it is easily affected by the voltage on other charged structure layers, thereby carrying various voltages. Because the metal light-shielding layer has a variable voltage, the threshold voltage of the TFT will continuously change during operation, resulting in unstable TFT operation.
  • the OLED has an anode, an organic functional layer, and a cathode formed on a substrate in this order.
  • all functional material layers and cathode metal layer films of OLEDs are prepared by a vacuum thermal evaporation process, that is, heating small organic molecular materials in a vacuum cavity to cause them to sublimate or melt and vaporize into material vapors, and pass through a metal mask (Mask The openings of) are deposited on the glass substrate.
  • a vacuum thermal evaporation process that is, heating small organic molecular materials in a vacuum cavity to cause them to sublimate or melt and vaporize into material vapors, and pass through a metal mask (Mask The openings of) are deposited on the glass substrate.
  • Vask metal mask
  • IJP Ink-jet printing
  • IJP technology has the advantages of high material utilization and is a key technology to solve the cost problem of large-sized OLED displays.
  • IJP technology is compared with traditional vacuum evaporation in the preparation of OLED device light-emitting layers.
  • the process has many advantages such as saving materials, mild process conditions, and more uniform film formation, so it has more application potential.
  • a plurality of nozzles are used to drop a functional material ink into a predetermined pixel area, and a desired pattern is formed after the solvent is evaporated.
  • An object of the present invention is to provide a method for manufacturing an OLED back plate.
  • An object of the present invention is to provide an OLED back plate.
  • a pixel defining layer is provided with a light-shielding groove above the active layer.
  • the light-shielding groove is provided with a black light-shielding block completely covering the active layer, which can effectively avoid the TFT.
  • the device is affected by light, which guarantees the characteristics of the TFT device, and has a simple structure and low production cost.
  • the present invention provides a method for manufacturing an OLED backplane, including the following steps:
  • Step S1 providing a base substrate, forming a TFT layer on the base substrate, forming a planarization layer on the TFT layer, and forming a plurality of pixel electrodes on the planarization layer;
  • the TFT layer includes a plurality of TFT devices, the TFT device includes an active layer, and a material of the active layer is a metal oxide semiconductor material;
  • Step S2 A pixel definition layer is formed on the planarization layer and the plurality of pixel electrodes. A plurality of pixel openings are formed on the pixel definition layer corresponding to the plurality of pixel electrodes, and the pixel definition layer is formed on the pixel definition layer. Forming a plurality of light shielding grooves above the active layers corresponding to the plurality of TFT devices;
  • step S3 inkjet printing is used to form a plurality of OLED light-emitting functional layers in the pixel openings, and inkjet printing is used to form a plurality of black shading blocks corresponding to the blackout slots.
  • the light-blocking block completely covers the active layer below it to shield the active layer.
  • a material of the active layer is indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide.
  • the TFT device is an etch stop layer TFT device, a back channel etch TFT device, or a top gate TFT device.
  • the material of the black light-blocking block formed in the step S3 is a black photoresist material.
  • the several OLED light-emitting functional layers formed in the step S3 include a red OLED light-emitting functional layer, a green OLED light-emitting functional layer, and a blue OLED light-emitting functional layer disposed at intervals; the red OLED light-emitting functional layer and green OLED light-emitting function.
  • the layers and the blue OLED light-emitting functional layers are arranged sequentially or in an array.
  • the invention also provides an OLED backplane, which comprises a base substrate, a TFT layer provided on the base substrate, a planarization layer provided on the TFT layer, and a plurality of pixel electrodes provided on the planarization layer.
  • a pixel definition layer provided on the flattening layer and a plurality of pixel electrodes, a plurality of pixel openings and a plurality of light shielding grooves provided on the pixel definition layer, and corresponding to the pixel openings provided in the plurality of pixel openings, respectively;
  • the TFT layer includes a plurality of TFT devices, the TFT device includes an active layer, and a material of the active layer is a metal oxide semiconductor material;
  • the plurality of pixel openings are respectively disposed above the plurality of pixel electrodes
  • the plurality of light shielding grooves are respectively disposed above the active layers of the plurality of TFT devices, and the black light shielding block completely covers the active layer to shield the active layer.
  • the material of the active layer is indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide.
  • the TFT device is an etch stop layer TFT device, a back channel etch TFT device, or a top gate TFT device.
  • the material of the black light-blocking block is a black photoresist material.
  • the plurality of OLED light-emitting functional layers include a red OLED light-emitting functional layer, a green OLED light-emitting functional layer, and a blue OLED light-emitting functional layer which are arranged at intervals; the red OLED light-emitting functional layer, green OLED light-emitting functional layer, and blue OLED light-emitting function
  • the layers are arranged sequentially or in an array.
  • the method for manufacturing the OLED backplane of the present invention forms a pixel opening on the pixel definition layer and a light-shielding groove corresponding to the active layer, and then uses an inkjet printing method to form an OLED light-emitting function in the pixel opening.
  • the black layer and the black light-blocking block that completely covers the active layer in the light-shielding groove can effectively prevent the TFT device from being affected by light, ensure the characteristics of the TFT device, and have simple processes and low production costs.
  • the pixel definition layer of the OLED back plate of the present invention is provided with a light shielding groove above the active layer, and the light shielding groove is provided with a black light shielding block completely covering the active layer, which can effectively prevent the TFT device from being affected by light and ensure The characteristics of the TFT device are simple, and the production cost is low.
  • FIG. 1 is a schematic flowchart of a method for manufacturing an OLED back plate according to the present invention
  • FIG. 2 is a schematic diagram of step S1 of a method for manufacturing an OLED back plate according to the present invention
  • FIG. 3 is a schematic diagram of step S2 of the method for manufacturing an OLED back plate according to the present invention.
  • FIG. 4 is a schematic diagram of step S3 of the manufacturing method of the OLED back plate of the present invention and a structural diagram of the OLED back plate of the present invention.
  • the present invention first provides a method for manufacturing an OLED backplane, including the following steps:
  • Step S1 as shown in FIG. 2, a base substrate 1 is provided, a TFT layer 2 is formed on the base substrate 1, a planarization layer 3 is formed on the TFT layer 2, and a planarization layer 3 is formed on the planarization layer 3.
  • the material of the active layer 21 may be other metal oxides such as indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium gallium zinc tin oxide (IGZTO), and the like. Physical semiconductor materials.
  • IGZO indium gallium zinc oxide
  • IZTO indium zinc tin oxide
  • IGZTO indium gallium zinc tin oxide
  • the TFT device T may be an Etch Stop Layer (ESL) TFT device, a Back Channel Etch (BCE) TFT device, a top gate type (top gate) TFT devices such as TFT devices.
  • ESL Etch Stop Layer
  • BCE Back Channel Etch
  • top gate top gate
  • Step S2 as shown in FIG. 3, a pixel definition layer 5 is formed on the flattening layer 3 and a plurality of pixel electrodes 4, and a plurality of pixel definition layers 5 are formed on the pixel definition layer 5 corresponding to the pixel electrodes 4.
  • the pixel openings 51 are formed on the pixel defining layer 5 above the active layer 21 corresponding to the plurality of TFT devices T, and a plurality of light shielding grooves 52 are formed.
  • Step S3 As shown in FIG. 4, a plurality of OLED light-emitting functional layers 6 are correspondingly formed in the plurality of pixel openings 51 by using an inkjet printing method, and a black color is printed by using the inkjet printing method in the plurality of shading grooves 52.
  • the ink forms a plurality of black light-blocking blocks 7 respectively, and the black light-blocking blocks 7 completely cover the active layer 21 below it to block light from the active layer 21.
  • the material of the black light-shielding block 7 formed in the step S3 is a black photoresist material, for example, a material for forming a black matrix (BM) in the conventional liquid crystal panel technology.
  • the several OLED light-emitting functional layers 6 formed in the step S3 include a red (R) OLED light-emitting functional layer, a green (G) OLED light-emitting functional layer, and a blue (B) OLED light-emitting functional layer disposed at intervals.
  • the red OLED light-emitting functional layer, the green OLED light-emitting functional layer, and the blue OLED light-emitting functional layer are arranged sequentially or in an array.
  • the step S3 further includes forming an upper electrode layer 8 on the plurality of OLED light-emitting functional layers 6, and each pixel electrode 4 and its corresponding OLED light-emitting functional layer 6 and upper electrode layer 8 together constitute an OLED device. .
  • the manufacturing method of the OLED back plate of the present invention is to form a pixel opening 51 on the pixel defining layer 5 and a light shielding groove 52 corresponding to the active layer 21, and then form an OLED light-emitting function layer in the pixel opening 51 by inkjet printing 6 and the formation of a black light-shielding block 7 in the light-shielding groove 52 that completely covers the active layer 21 can effectively prevent the TFT device T from being affected by light, ensure the characteristics of the TFT device T, and have simple processes and low production costs.
  • the present invention further provides an OLED backplane, which includes a base substrate 1, a TFT layer provided on the base substrate 1, and a TFT layer provided on the base substrate 1.
  • the pixel openings 51 and the shading grooves 52 on the definition layer 5 correspond to the OLED light-emitting functional layers 6 provided in the pixel openings 51 and the light shading grooves 52 respectively.
  • a plurality of black light-blocking blocks 7 and an upper electrode layer 8 provided on the plurality of OLED light-emitting functional layers 6;
  • the TFT layer 2 includes a plurality of TFT devices T.
  • the TFT device T includes an active layer 21.
  • the material of the active layer 21 is a metal oxide semiconductor material.
  • the plurality of pixel openings 51 are respectively disposed above the plurality of pixel electrodes 4;
  • the plurality of light shielding grooves 52 are respectively disposed above the active layers 21 of the plurality of TFT devices T, and the black light shielding block 7 completely covers the active layer 21 and shields the active layer 21.
  • each pixel electrode 4 and its corresponding OLED light-emitting functional layer 6 and upper electrode layer 8 together constitute an OLED device.
  • the material of the active layer 21 may be other metal oxide semiconductor materials such as indium gallium zinc oxide, indium zinc tin oxide, indium gallium zinc tin oxide, and the like.
  • the TFT device T may be a TFT device of a structure type such as an etch stop layer TFT device, a back channel etch TFT device, and a top gate TFT device.
  • a material of the black light-blocking block 7 is a black photoresist material.
  • the plurality of OLED light-emitting functional layers 6 include a red OLED light-emitting functional layer, a green OLED light-emitting functional layer, and a blue OLED light-emitting functional layer disposed at intervals; the red OLED light-emitting functional layer, green OLED light-emitting functional layer, and blue
  • the color OLED light-emitting functional layers are arranged sequentially or in an array.
  • the pixel definition layer 5 of the OLED back plate of the present invention is provided with a light-shielding groove 52 above the active layer 21, and a black light-shielding block 7 completely covering the active layer 21 is provided in the light-shielding groove 52, which can effectively avoid the TFT
  • the device is affected by light, which guarantees the characteristics of the TFT device, and has a simple structure and low production cost.
  • the method for manufacturing an OLED backplane of the present invention includes forming a pixel opening on the pixel definition layer and a light shielding groove corresponding to the active layer, and then forming an OLED light-emitting functional layer in the pixel opening by inkjet printing.
  • a black light-shielding block that completely covers the active layer is formed in the light-shielding groove, which can effectively prevent the TFT device from being affected by light, ensure the characteristics of the TFT device, and have simple processes and low production costs.
  • the pixel definition layer of the OLED back plate of the present invention is provided with a light shielding groove above the active layer, and the light shielding groove is provided with a black light shielding block completely covering the active layer, which can effectively prevent the TFT device from being affected by light and ensure The characteristics of the TFT device are simple, and the production cost is low.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种OLED背板的制作方法及OLED背板。OLED背板的制作方法通过在像素定义层（5）上形成像素开口（51）和对应位于有源层（21）上方的遮光槽（52），然后采用喷墨打印的方式在像素开口（51）内形成OLED发光功能层（6）以及在遮光槽（52）内形成完全覆盖有源层（21）的黑色遮光块（7），可有效避免TFT器件（T）受到光照影响，保证TFT器件（T）的特性，且工艺简单，生产成本低。

Description

OLED背板的制作方法及OLED背板 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED背板的制作方法及OLED背板。
背景技术
平板显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平板显示装置主要包括液晶显示装置(Liquid Crystal Display，LCD)及有机电致发光显示装置(Organic Light Emitting Display，OLED)。
LCD显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。OLED显示装置是主动发光的显示器，具有自发光、高对比度、宽视角、快速响应、高发光效率、低操作电压、超轻薄等优势，具有更优异的彩色显示画质、更宽广的观看范围和更大的设计灵活性。
薄膜晶体管(Thin Film Transistor，TFT)是平板显示装置的重要组成部分，可形成在玻璃基板或塑料基板上，通常作为开关装置和驱动装置用在诸如LCD显示装置与OLED显示装置中。
金属氧化物半导体TFT技术是当前的热门技术，金属氧化物半导体由于具有较高的电子迁移率，而且与低温多晶硅(LTPS)相比，金属氧化物半导体TFT的制程简单，与非晶硅(a-Si)TFT的制程相比相容性较高，可应用于LCD显示装置与OLED显示装置中，适用于大小尺寸显示，具有良好的应用发展前景，为当前业界研究热门。
由于金属氧化物半导体对光比较敏感，因此金属氧化物半导体受到光线照射后，金属氧化物半导体TFT的阈值电压明显负移，现有一种改进的方法是在金属氧化物半导体材料的有源层下方设置金属遮光层，消除光照引起的TFT阈值电压负漂现象，金属遮光层虽然不与TFT结构中其它带电结构层相连，但是其容易受到其它带电结构层上的电压影响，从而携带上各种电压，由于金属遮光层具有变化不定的电压，因此TFT在工作时其阈值电压会不断变化，导致TFT工作不稳定。
OLED具有依次形成于基板上的阳极、有机功能层和阴极。目前，OLED 各功能材料层与阴极金属层薄膜均通过真空热蒸镀工艺制备，即在真空腔体内加热有机小分子材料，使其升华或者熔融气化成材料蒸汽，透过金属掩膜板(Mask)的开孔沉积在玻璃基板上。但由于真空热蒸发制备成本高，限制了OLED显示器的大范围商业化。
喷墨打印(Ink-jet Print，IJP)技术具有材料利用率高等优点，是解决大尺寸OLED显示器成本问题的关键技术，IJP技术在OLED器件发光层的制备中，相比于传统的真空蒸镀工艺，具有节省材料、制程条件温和、成膜更均匀等诸多优点，所以更具应用潜力。此方法是利用多个喷嘴将功能材料墨水滴入预定的像素区域，待溶剂挥发后形成所需图案。
发明内容
本发明的目的在于提供一种OLED背板的制作方法，通过在像素定义层上对应于有源层的上方开设遮光槽，并在遮光槽内形成完全覆盖有源层的黑色遮光块，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且工艺简单，生产成本低。
本发明的目的在于提供一种OLED背板，其像素定义层在对应于有源层的上方设有遮光槽，所述遮光槽内设有完全覆盖有源层的黑色遮光块，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且结构简单，生产成本低。
为实现上述目的，本发明提供一种OLED背板的制作方法，包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成TFT层，在所述TFT层上形成平坦化层，在所述平坦化层上形成数个像素电极；
所述TFT层包括数个TFT器件，所述TFT器件包括有源层，所述有源层的材料为金属氧化物半导体材料；
步骤S2、在所述平坦化层及数个像素电极上形成像素定义层，在所述像素定义层上对应于所述数个像素电极上方形成数个像素开口，并在所述像素定义层上对应于所述数个TFT器件的有源层上方形成数个遮光槽；
步骤S3、采用喷墨打印方式在所述数个像素开口内对应形成数个OLED发光功能层，同时采用喷墨打印方式在所述数个遮光槽内对应形成数个黑色遮光块，所述黑色遮光块完全覆盖其下方的有源层而对有源层进行遮光。
所述步骤S1中，所述有源层的材料为铟镓锌氧化物、铟锌锡氧化物或铟镓锌锡氧化物。
所述步骤S1中，所述TFT器件为蚀刻阻挡层型TFT器件、背沟道蚀刻型TFT器件或顶栅型TFT器件。
所述步骤S3中形成的所述黑色遮光块的材料为黑色光阻材料。
所述步骤S3中形成的所述数个OLED发光功能层包括间隔设置的红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层；所述红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层呈顺序排列或呈阵列排列。
本发明还提供一种OLED背板，包括衬底基板、设于衬底基板上的TFT层、设于所述TFT层上的平坦化层、设于所述平坦化层上的数个像素电极、设于所述平坦化层及数个像素电极上的像素定义层、设于所述像素定义层上的数个像素开口和数个遮光槽、分别对应设于所述数个像素开口内的数个OLED发光功能层以及分别对应设于所述数个遮光槽内的数个黑色遮光块；
所述TFT层包括数个TFT器件，所述TFT器件包括有源层，所述有源层的材料为金属氧化物半导体材料；
所述数个像素开口分别对应设于所述数个像素电极上方；
所述数个遮光槽分别对应设于所述数个TFT器件的有源层上方，所述黑色遮光块完全覆盖所述有源层而对有源层进行遮光。
所述有源层的材料为铟镓锌氧化物、铟锌锡氧化物或铟镓锌锡氧化物。
所述TFT器件为蚀刻阻挡层型TFT器件、背沟道蚀刻型TFT器件或顶栅型TFT器件。
所述黑色遮光块的材料为黑色光阻材料。
所述数个OLED发光功能层包括间隔设置的红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层；所述红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层呈顺序排列或呈阵列排列。
本发明的有益效果：本发明的OLED背板的制作方法通过在像素定义层上形成像素开口和对应位于有源层上方的遮光槽，然后采用喷墨打印的方式在像素开口内形成OLED发光功能层以及在遮光槽内形成完全覆盖有源层的黑色遮光块，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且工艺简单，生产成本低。本发明的OLED背板的像素定义层在对应于有源层的上方设有遮光槽，所述遮光槽内设有完全覆盖有源层的黑色遮光块，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且结构简单，生产成本低。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的OLED背板的制作方法的流程示意图；
图2为本发明的OLED背板的制作方法的步骤S1的示意图；
图3为本发明的OLED背板的制作方法的步骤S2的示意图；
图4为本发明的OLED背板的制作方法的步骤S3的示意图暨本发明的OLED背板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种OLED背板的制作方法，包括如下步骤：
步骤S1、如图2所示，提供衬底基板1，在所述衬底基板1上形成TFT层2，在所述TFT层2上形成平坦化层3，在所述平坦化层3上形成数个像素电极4；所述TFT层2包括数个TFT器件T，所述TFT器件T包括有源层21，所述有源层21的材料为金属氧化物半导体材料。
具体地，所述步骤S1中，所述有源层21的材料可以为铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)、铟镓锌锡氧化物(IGZTO)等其他金属氧化物半导体材料。
具体地，所述步骤S1中，所述TFT器件T可以为蚀刻阻挡层型(Etch Stop Layer，ESL)TFT器件、背沟道蚀刻型(Back Channel Etch，BCE)TFT器件、顶栅型(top gate)TFT器件等结构类型的TFT器件。
步骤S2、如图3所示，在所述平坦化层3及数个像素电极4上形成像素定义层5，在所述像素定义层5上对应于所述数个像素电极4上方形成数个像素开口51，并在所述像素定义层5上对应于所述数个TFT器件T的有源层21上方形成数个遮光槽52。
步骤S3、如图4所示，采用喷墨打印方式在所述数个像素开口51内对应形成数个OLED发光功能层6，同时采用喷墨打印方式在所述数个遮光槽52内打印黑色墨水而分别形成数个黑色遮光块7，所述黑色遮光块7完全覆盖其下方的有源层21而对有源层21进行遮光。
具体地，所述步骤S3中形成的所述黑色遮光块7的材料为黑色光阻材料，例如现有液晶面板技术中用于形成黑色矩阵(BM)的材料。
具体地，所述步骤S3中形成的所述数个OLED发光功能层6包括间隔设置的红色(R)OLED发光功能层、绿色(G)OLED发光功能层及蓝色(B)OLED发光功能层；所述红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层呈顺序排列或呈阵列排列。
具体地，所述步骤S3还包括在所述数个OLED发光功能层6上形成上电极层8，每一像素电极4与其上方对应的OLED发光功能层6和上电极层8共同构成一OLED器件。
本发明的OLED背板的制作方法通过在像素定义层5上形成像素开口51和对应位于有源层21上方的遮光槽52，然后采用喷墨打印的方式在像素开口51内形成OLED发光功能层6以及在遮光槽52内形成完全覆盖有源层21的黑色遮光块7，可有效避免TFT器件T受到光照影响，保证TFT器件T的特性，且工艺简单，生产成本低。
基于上述的OLED背板的制作方法，如图4所示，本发明还提供一种OLED背板，包括衬底基板1、设于衬底基板1上的TFT层2、设于所述TFT层2上的平坦化层3、设于所述平坦化层3上的数个像素电极4、设于所述平坦化层3及数个像素电极4上的像素定义层5、设于所述像素定义层5上的数个像素开口51和数个遮光槽52、分别对应设于所述数个像素开口51内的数个OLED发光功能层6、分别对应设于所述数个遮光槽52内的数个黑色遮光块7以及设于所述数个OLED发光功能层6上的上电极层8；
所述TFT层2包括数个TFT器件T，所述TFT器件T包括有源层21，所述有源层21的材料为金属氧化物半导体材料；
所述数个像素开口51分别对应设于所述数个像素电极4上方；
所述数个遮光槽52分别对应设于所述数个TFT器件T的有源层21上方，所述黑色遮光块7完全覆盖所述有源层21而对有源层21进行遮光。
具体地，每一像素电极4与其上方对应的OLED发光功能层6和上电极层8共同构成一OLED器件
具体地，所述有源层21的材料可以为铟镓锌氧化物、铟锌锡氧化物、铟镓锌锡氧化物等其他金属氧化物半导体材料。
具体地，所述TFT器件T可以为蚀刻阻挡层型TFT器件、背沟道蚀刻型TFT器件、顶栅型TFT器件等结构类型的TFT器件。
具体地，所述黑色遮光块7的材料为黑色光阻材料。
具体地，所述数个OLED发光功能层6包括间隔设置的红色OLED发 光功能层、绿色OLED发光功能层及蓝色OLED发光功能层；所述红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层呈顺序排列或呈阵列排列。
本发明的OLED背板的像素定义层5在对应于有源层21的上方设有遮光槽52，所述遮光槽52内设有完全覆盖有源层21的黑色遮光块7，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且结构简单，生产成本低。
综上所述，本发明的OLED背板的制作方法通过在像素定义层上形成像素开口和对应位于有源层上方的遮光槽，然后采用喷墨打印的方式在像素开口内形成OLED发光功能层以及在遮光槽内形成完全覆盖有源层的黑色遮光块，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且工艺简单，生产成本低。本发明的OLED背板的像素定义层在对应于有源层的上方设有遮光槽，所述遮光槽内设有完全覆盖有源层的黑色遮光块，可有效避免TFT器件受到光照影响，保证TFT器件的特性，且结构简单，生产成本低。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

  1. 一种OLED背板的制作方法，包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成TFT层，在所述TFT层上形成平坦化层，在所述平坦化层上形成数个像素电极；
    所述TFT层包括数个TFT器件，所述TFT器件包括有源层，所述有源层的材料为金属氧化物半导体材料；
    步骤S2、在所述平坦化层及数个像素电极上形成像素定义层，在所述像素定义层上对应于所述数个像素电极上方形成数个像素开口，并在所述像素定义层上对应于所述数个TFT器件的有源层上方形成数个遮光槽；
    步骤S3、采用喷墨打印方式在所述数个像素开口内对应形成数个OLED发光功能层，同时采用喷墨打印方式在所述数个遮光槽内对应形成数个黑色遮光块，所述黑色遮光块完全覆盖其下方的有源层而对有源层进行遮光。
  2. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S1中，所述有源层的材料为铟镓锌氧化物、铟锌锡氧化物或铟镓锌锡氧化物。
  3. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S1中，所述TFT器件为蚀刻阻挡层型TFT器件、背沟道蚀刻型TFT器件或顶栅型TFT器件。
  4. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S3中形成的所述黑色遮光块的材料为黑色光阻材料。
  5. 如权利要求1所述的OLED背板的制作方法，其中，所述步骤S3中形成的所述数个OLED发光功能层包括间隔设置的红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层；所述红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层呈顺序排列或呈阵列排列。
  6. 一种OLED背板，包括衬底基板、设于衬底基板上的TFT层、设于所述TFT层上的平坦化层、设于所述平坦化层上的数个像素电极、设于所述平坦化层及数个像素电极上的像素定义层、设于所述像素定义层上的数个像素开口和数个遮光槽、分别对应设于所述数个像素开口内的数个OLED发光功能层以及分别对应设于所述数个遮光槽内的数个黑色遮光块；
    所述TFT层包括数个TFT器件，所述TFT器件包括有源层，所述有源层的材料为金属氧化物半导体材料；
    所述数个像素开口分别对应设于所述数个像素电极上方；
    所述数个遮光槽分别对应设于所述数个TFT器件的有源层上方，所述黑色遮光块完全覆盖所述有源层而对有源层进行遮光。
  7. 如权利要求6所述的OLED背板，其中，所述有源层的材料为铟镓锌氧化物、铟锌锡氧化物或铟镓锌锡氧化物。
  8. 如权利要求6所述的OLED背板，其中，所述TFT器件为蚀刻阻挡层型TFT器件、背沟道蚀刻型TFT器件或顶栅型TFT器件。
  9. 如权利要求6所述的OLED背板，其中，所述黑色遮光块的材料为黑色光阻材料。
  10. 如权利要求6所述的OLED背板，其中，所述数个OLED发光功能层包括间隔设置的红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层；所述红色OLED发光功能层、绿色OLED发光功能层及蓝色OLED发光功能层呈顺序排列或呈阵列排列。
PCT/CN2018/106580 2018-05-21 2018-09-19 Oled背板的制作方法及oled背板 WO2019223198A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/099,183 US11063246B2 (en) 2018-05-21 2018-09-19 Manufacturing method of organic light emitting diode back plate and the organic light emitting diode back plate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810488940.8 2018-05-21
CN201810488940.8A CN108538902B (zh) 2018-05-21 2018-05-21 Oled背板的制作方法及oled背板

Publications (1)

Publication Number Publication Date
WO2019223198A1 true WO2019223198A1 (zh) 2019-11-28

Family

ID=63472328

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/106580 WO2019223198A1 (zh) 2018-05-21 2018-09-19 Oled背板的制作方法及oled背板

Country Status (3)

Country Link
US (1) US11063246B2 (zh)
CN (1) CN108538902B (zh)
WO (1) WO2019223198A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108538902B (zh) * 2018-05-21 2020-09-01 深圳市华星光电技术有限公司 Oled背板的制作方法及oled背板
CN110212009B (zh) * 2019-07-05 2021-03-23 Tcl华星光电技术有限公司 Oled显示面板及其制备方法
CN112002733B (zh) 2020-08-06 2023-12-01 武汉华星光电半导体显示技术有限公司 Oled显示装置及制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104297980A (zh) * 2014-10-31 2015-01-21 京东方科技集团股份有限公司 一种coa基板及其制作方法和显示装置
CN104576957A (zh) * 2013-10-10 2015-04-29 乐金显示有限公司 有机电致发光显示设备及其制造方法
CN106129104A (zh) * 2016-09-27 2016-11-16 京东方科技集团股份有限公司 Oled显示基板及其制作方法、oled显示面板
CN106601754A (zh) * 2016-12-06 2017-04-26 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板及其制备方法、显示装置
CN107644951A (zh) * 2017-10-20 2018-01-30 东莞理工学院 一种印刷oled显示屏的制备方法
CN108538902A (zh) * 2018-05-21 2018-09-14 深圳市华星光电技术有限公司 Oled背板的制作方法及oled背板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI228384B (en) * 2003-06-26 2005-02-21 Ind Tech Res Inst Active matrix organic light emitting diode
KR100647325B1 (ko) * 2005-04-21 2006-11-23 삼성전자주식회사 저면발광형 유기발광소자
CN103456764B (zh) * 2013-09-09 2016-01-20 京东方科技集团股份有限公司 Oled阵列基板及其制造方法、显示装置
CN205900543U (zh) * 2016-05-18 2017-01-18 武汉华星光电技术有限公司 一种oled显示面板
CN107565049B (zh) * 2017-08-25 2019-11-01 京东方科技集团股份有限公司 Amoled显示面板及其制备方法
KR102390321B1 (ko) * 2017-09-27 2022-04-26 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576957A (zh) * 2013-10-10 2015-04-29 乐金显示有限公司 有机电致发光显示设备及其制造方法
CN104297980A (zh) * 2014-10-31 2015-01-21 京东方科技集团股份有限公司 一种coa基板及其制作方法和显示装置
CN106129104A (zh) * 2016-09-27 2016-11-16 京东方科技集团股份有限公司 Oled显示基板及其制作方法、oled显示面板
CN106601754A (zh) * 2016-12-06 2017-04-26 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板及其制备方法、显示装置
CN107644951A (zh) * 2017-10-20 2018-01-30 东莞理工学院 一种印刷oled显示屏的制备方法
CN108538902A (zh) * 2018-05-21 2018-09-14 深圳市华星光电技术有限公司 Oled背板的制作方法及oled背板

Also Published As

Publication number Publication date
CN108538902B (zh) 2020-09-01
US20210119185A1 (en) 2021-04-22
CN108538902A (zh) 2018-09-14
US11063246B2 (en) 2021-07-13

Similar Documents

Publication Publication Date Title
US8735916B2 (en) Pixel structure and manufacturing method thereof
CN106847743B (zh) Tft基板及其制作方法
US9450029B2 (en) OLED display panel and method for manufacturing the same
WO2016123965A1 (zh) 一种显示面板及其制作方法和显示装置
US11152436B2 (en) Display panel, fabrication method thereof, and display device
US9935287B2 (en) Array substrate and manufacturing method therefor, and display device
US9484393B2 (en) Array substrate of a display device, manufacturing method thereof
US20210091153A1 (en) Display Substrate and Preparation Method thereof, and Display Apparatus
KR20130007472A (ko) 하이브리드형 풀 컬러 능동형 유기발광 디스플레이
US9679953B2 (en) WOLED back panel and method of manufacturing the same
WO2011104893A1 (ja) 有機ｅｌディスプレイ及び有機ｅｌディスプレイの製造方法
WO2018086210A1 (zh) Tft基板及其制作方法
WO2019223198A1 (zh) Oled背板的制作方法及oled背板
WO2018120362A1 (zh) Oled基板及其制作方法
US9412797B2 (en) Array substrate with color film
US20160254287A1 (en) Thin-Film Transistor, Manufacturing Method Thereof, Display Substrate and Display Device
US9397221B2 (en) Thin film transistor, manufacturing method thereof and thin film transistor array substrate
US20160343864A1 (en) Thin-Film Transistor and Manufacturing Method Thereof, Array Substrate and Manufacturing Method Thereof, and Display Apparatus
WO2019192421A1 (zh) Oled基板及其制备方法、显示装置
US20190027548A1 (en) Method for manufacturing array substrate of amoled device
CN109073944B (zh) 阵列基板及其制造方法、显示面板和显示设备
US20120298985A1 (en) Thin film transistor and method of fabricating the same
CN103560211B (zh) 有机电致发光器件的制作方法及制作的有机电致发光器件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18919876

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18919876

Country of ref document: EP

Kind code of ref document: A1