WO2019219292A3 - Durchlaufanlage und verfahren zum beschichten von substraten - Google Patents

Durchlaufanlage und verfahren zum beschichten von substraten Download PDF

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Publication number
WO2019219292A3
WO2019219292A3 PCT/EP2019/058505 EP2019058505W WO2019219292A3 WO 2019219292 A3 WO2019219292 A3 WO 2019219292A3 EP 2019058505 W EP2019058505 W EP 2019058505W WO 2019219292 A3 WO2019219292 A3 WO 2019219292A3
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WO
WIPO (PCT)
Prior art keywords
chamber
channel
substrates
continuous flow
flow system
Prior art date
Application number
PCT/EP2019/058505
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English (en)
French (fr)
Other versions
WO2019219292A2 (de
Inventor
Bernhard Cord
Michael Reising
Dieter Scherger
Torsten DIPPELL
Frank May
Peter Wohlfart
Oliver Hohn
Original Assignee
Singulus Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Singulus Technologies Ag filed Critical Singulus Technologies Ag
Priority to US17/056,739 priority Critical patent/US20210335585A1/en
Priority to CN201980033337.3A priority patent/CN112236544A/zh
Priority to EP19716864.4A priority patent/EP3794159A2/de
Publication of WO2019219292A2 publication Critical patent/WO2019219292A2/de
Publication of WO2019219292A3 publication Critical patent/WO2019219292A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Eine Durchlaufanlage (100) zur Beschichtung von Substraten (103) weist ein Prozessmodul (130) und eine Vakuumschleuse (110, 150) zum Einschleusen der Substrate (103) oder zum Ausschleusen der Substrate (103) auf. Die Vakuumschleuse (110, 150) weist eine Kammer zur Aufnahme eines Substratträgers (102) mit mehreren Substraten (103) und eine Strömungskanalanordnung zum Evakuieren und Fluten der Kammer auf. Die Strömungskanalanordnung weist einen ersten Kanal zum Evakuieren und Fluten der Kammer und einen zweiten Kanal zum Evakuieren und Fluten der Kammer auf, wobei der erste Kanal und der zweite Kanal an entgegengesetzten Seiten der Kammer angeordnet sind.
PCT/EP2019/058505 2018-05-18 2019-04-04 Durchlaufanlage und verfahren zum beschichten von substraten WO2019219292A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/056,739 US20210335585A1 (en) 2018-05-18 2019-04-04 Continuous flow system and method for coating substrates
CN201980033337.3A CN112236544A (zh) 2018-05-18 2019-04-04 用于涂布基材的连续式设备与方法
EP19716864.4A EP3794159A2 (de) 2018-05-18 2019-04-04 Durchlaufanlage und verfahren zum beschichten von substraten

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018004086.1A DE102018004086A1 (de) 2018-05-18 2018-05-18 Durchlaufanlage und Verfahren zum Beschichten von Substraten
DE102018004086.1 2018-05-18

Publications (2)

Publication Number Publication Date
WO2019219292A2 WO2019219292A2 (de) 2019-11-21
WO2019219292A3 true WO2019219292A3 (de) 2020-01-16

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Application Number Title Priority Date Filing Date
PCT/EP2019/058505 WO2019219292A2 (de) 2018-05-18 2019-04-04 Durchlaufanlage und verfahren zum beschichten von substraten

Country Status (6)

Country Link
US (1) US20210335585A1 (de)
EP (1) EP3794159A2 (de)
CN (1) CN112236544A (de)
DE (1) DE102018004086A1 (de)
TW (1) TWI793303B (de)
WO (1) WO2019219292A2 (de)

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Publication number Priority date Publication date Assignee Title
KR102168380B1 (ko) * 2019-07-18 2020-10-21 세메스 주식회사 냉각 유닛, 이를 포함하는 기판 처리 장치
KR20210149266A (ko) * 2020-06-01 2021-12-09 삼성디스플레이 주식회사 기판 고정 장치, 이를 포함하는 성막 처리 설비 및 이를 이용한 성막 처리 방법
CN111739971B (zh) * 2020-08-03 2021-02-19 苏州迈正科技有限公司 镀膜设备、方法、系统及太阳能电池、组件、发电系统
DE102021108635A1 (de) 2021-01-29 2022-08-04 Pink Gmbh Thermosysteme Anlage und Verfahren zum Verbinden von elektronischen Baugruppen
WO2022162135A2 (de) 2021-01-29 2022-08-04 Pink Gmbh Thermosysteme Anlage und verfahren zum verbinden von elektronischen baugruppen
CN113363353B (zh) * 2021-06-01 2022-03-08 中山大学新华学院 一种基于5g北斗及物联网定位系统的光伏板加工装置
CN114351124A (zh) * 2022-01-14 2022-04-15 营口金辰机械股份有限公司 一种电池片镀膜系统

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4303462A1 (de) * 1992-03-30 1993-10-14 Leybold Ag Mehrkammerbeschichtungsanlage
DE10205167C1 (de) * 2002-02-07 2003-08-28 Ardenne Anlagentech Gmbh In-Line-Vakuumbeschichtungsanlage zur Zwischenbehandlung von Substraten
EP1976022A2 (de) * 2007-03-29 2008-10-01 Applied Materials, Inc. Verfahren und Vorrichtung zur Herstellung einer Antireflexionsschicht oder einer Passivierungsschicht für Solarzellen
US20100054905A1 (en) * 2008-08-27 2010-03-04 Mehran Behdjat Load lock chamber for large area substrate processing system
WO2013032406A1 (en) * 2011-09-01 2013-03-07 National University Of Singapore A system and a method for depositing a layer on a substrate
DE102012103254A1 (de) * 2012-04-16 2013-10-17 Von Ardenne Anlagentechnik Gmbh Verfahren zum Einschleusen von Substraten in eine Vakuumbehandlungsanlage
DE102012109830A1 (de) * 2012-10-16 2014-04-17 Von Ardenne Gmbh Schleusenkammer einer Vakuumbehandlungsanlage
DE102013103133A1 (de) * 2013-03-27 2014-10-02 Von Ardenne Gmbh Transportsystem einer Vakuumbehandlungsanlage
WO2016184487A1 (en) * 2015-05-15 2016-11-24 Applied Materials, Inc. Load lock chamber, vacuum processing system with load lock chamber and method for evacuating a load lock chamber
DE102015117753A1 (de) * 2015-10-19 2017-04-20 Von Ardenne Gmbh Vakuumschleusenanordnung, Vakuumanordnung und Verfahren
WO2019105985A1 (de) * 2017-11-29 2019-06-06 Singulus Technologies Ag Vakuumschleuse und verfahren zum schleusen eines substratträgers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5961269A (en) * 1996-11-18 1999-10-05 Applied Materials, Inc. Three chamber load lock apparatus
DE102004006419A1 (de) * 2004-02-09 2005-09-08 Applied Films Gmbh & Co. Kg Energie- und Medienanschluss für eine aus mehreren Kammern bestehende Beschichtungsanlage
ATE412789T1 (de) * 2004-03-31 2008-11-15 Applied Materials Gmbh & Co Kg Schleusenanordnung für eine vakuumbehandlungsanlage und verfahren zum betreiben von dieser
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
EP2276057B1 (de) 2009-05-29 2011-11-02 Roth & Rau AG Linearer Gasphasen-Diffusionsofen
DE102010040640B4 (de) * 2010-09-13 2014-10-02 Von Ardenne Gmbh Substratbehandlungsanlage
US9916257B2 (en) 2011-07-26 2018-03-13 Intel Corporation Method and apparatus for TLB shoot-down in a heterogeneous computing system supporting shared virtual memory
JP2013122067A (ja) * 2011-12-09 2013-06-20 Cornes Technologies Ltd マイクロ波プラズマ処理装置
DE102012201953A1 (de) * 2012-02-09 2013-08-14 Singulus Technologies Ag Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht
WO2015126439A1 (en) 2014-02-21 2015-08-27 Applied Materials, Inc. Method and apparatus for passivating crystalline silicon solar cells
KR102261651B1 (ko) * 2014-04-16 2021-06-04 어플라이드 머티어리얼스, 인코포레이티드 진공 프로세싱 시스템을 위한 로드 락 챔버 및 진공 프로세싱 시스템
DE102016107830B4 (de) * 2016-04-27 2022-02-03 VON ARDENNE Asset GmbH & Co. KG Vakuumkammeranordnung und Verfahren zum Betreiben einer Vakuumkammeranordnung

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4303462A1 (de) * 1992-03-30 1993-10-14 Leybold Ag Mehrkammerbeschichtungsanlage
DE10205167C1 (de) * 2002-02-07 2003-08-28 Ardenne Anlagentech Gmbh In-Line-Vakuumbeschichtungsanlage zur Zwischenbehandlung von Substraten
EP1976022A2 (de) * 2007-03-29 2008-10-01 Applied Materials, Inc. Verfahren und Vorrichtung zur Herstellung einer Antireflexionsschicht oder einer Passivierungsschicht für Solarzellen
US20100054905A1 (en) * 2008-08-27 2010-03-04 Mehran Behdjat Load lock chamber for large area substrate processing system
WO2013032406A1 (en) * 2011-09-01 2013-03-07 National University Of Singapore A system and a method for depositing a layer on a substrate
DE102012103254A1 (de) * 2012-04-16 2013-10-17 Von Ardenne Anlagentechnik Gmbh Verfahren zum Einschleusen von Substraten in eine Vakuumbehandlungsanlage
DE102012109830A1 (de) * 2012-10-16 2014-04-17 Von Ardenne Gmbh Schleusenkammer einer Vakuumbehandlungsanlage
DE102013103133A1 (de) * 2013-03-27 2014-10-02 Von Ardenne Gmbh Transportsystem einer Vakuumbehandlungsanlage
WO2016184487A1 (en) * 2015-05-15 2016-11-24 Applied Materials, Inc. Load lock chamber, vacuum processing system with load lock chamber and method for evacuating a load lock chamber
DE102015117753A1 (de) * 2015-10-19 2017-04-20 Von Ardenne Gmbh Vakuumschleusenanordnung, Vakuumanordnung und Verfahren
WO2019105985A1 (de) * 2017-11-29 2019-06-06 Singulus Technologies Ag Vakuumschleuse und verfahren zum schleusen eines substratträgers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAN BULTMAN ET AL: "Inline processing of crystalline silicon solar cells: the holy grail for large-scale manufacturing?", PHOTOVOLTAICS INTERNATIONAL, vol. PVI-5-14-2, 18 August 2009 (2009-08-18), pages 77 - 83, XP055644693 *

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