WO2019218555A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

Info

Publication number
WO2019218555A1
WO2019218555A1 PCT/CN2018/105908 CN2018105908W WO2019218555A1 WO 2019218555 A1 WO2019218555 A1 WO 2019218555A1 CN 2018105908 W CN2018105908 W CN 2018105908W WO 2019218555 A1 WO2019218555 A1 WO 2019218555A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
quantum dot
scattering layer
display panel
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/105908
Other languages
English (en)
French (fr)
Inventor
黄辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US16/307,139 priority Critical patent/US11239447B2/en
Publication of WO2019218555A1 publication Critical patent/WO2019218555A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • organic electroluminescent display also known as an organic electroluminescent display
  • OLED Organic Light-Emitting Diode
  • High definition and contrast ratio, near 180° viewing angle, wide temperature range, flexible display and large-area full-color display, etc., are recognized by the industry as the most promising display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and hole transport, respectively.
  • the layers, electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the OLED device Due to the refractive index of the interface, the OLED device will undergo total reflection during the illumination process. Most of the light cannot be effectively extracted due to refraction or reflection inside the OLED display panel, resulting in more light loss.
  • the method of using more light extraction is mostly improved inside the OLED device and inside the glass substrate, but this method is difficult to implement, and the chromaticity of the OLED device is not effectively guaranteed; or the external light extraction is directly added.
  • the addition of an external light extraction device increases the thickness of the entire OLED display panel, which is not conducive to future commercial production.
  • An object of the present invention is to provide a method for fabricating an OLED display panel, which can make the OLED display panel uniformly emit light and improve luminous efficiency.
  • Another object of the present invention is to provide an OLED display panel with good light uniformity and high luminous efficiency.
  • the present invention provides a method for fabricating an OLED display panel, comprising the following steps:
  • Step S1 providing a substrate, forming an OLED device on the substrate, forming a thin film encapsulation layer covering the OLED device on the substrate;
  • Step S2 forming a first scattering layer on the thin film encapsulation layer
  • Step S3 forming a quantum dot layer on the first scattering layer
  • Step S4 forming a second scattering layer on the quantum dot layer.
  • a thin film encapsulation layer covering the OLED device is formed on the substrate by a vacuum film formation method; in the step S2, an atomic layer deposition or coating method is used to form a first layer on the thin film encapsulation layer. A scattering layer.
  • a quantum dot layer is formed on the first scattering layer by a solution method.
  • a second scattering layer of a nano-network film structure is formed on the quantum dot layer by ion exchange self-assembly.
  • the material of the thin film encapsulation layer is silicon oxide or silicon nitride; the thickness of the thin film encapsulation layer is 2 um to 10 um; the material of the first scattering layer is inorganic oxide particles; the thickness of the first scattering layer is less than 20um; the material of the quantum dot layer is cadmium sulfide or cadmium selenide; the thickness of the quantum dot layer is less than 10 um; the material of the second scattering layer is multi-arm titanium dioxide or multi-arm cadmium sulfide nanorod; The thickness of the two scattering layers is less than 10 um.
  • the present invention also provides an OLED display panel, comprising: a substrate, an OLED device disposed on the substrate, a thin film encapsulation layer disposed on the substrate and covering the OLED device, and a first layer disposed on the thin film encapsulation layer a scattering layer, a quantum dot layer disposed on the first scattering layer, and a second scattering layer disposed on the quantum dot layer.
  • a thin film encapsulation layer covering the OLED device is formed on the substrate by a vacuum film formation method; a first scattering layer is formed on the thin film encapsulation layer by atomic layer deposition or coating.
  • a quantum dot layer is formed on the first scattering layer by a solution method.
  • a second scattering layer of a nano-network film structure is formed on the quantum dot layer by ion exchange self-assembly.
  • the material of the thin film encapsulation layer is silicon oxide or silicon nitride; the thickness of the thin film encapsulation layer is 2 um to 10 um; the material of the first scattering layer is inorganic oxide particles; the thickness of the first scattering layer is less than 20um; the material of the quantum dot layer is cadmium sulfide or cadmium selenide; the thickness of the quantum dot layer is less than 10 um; the material of the second scattering layer is multi-arm titanium dioxide or multi-arm cadmium sulfide nanorod; The thickness of the two scattering layers is less than 10 um.
  • the method for fabricating an OLED display panel of the present invention forms a quantum dot layer on the first scattering layer by forming a first scattering layer on the thin film encapsulation layer, and forms a quantum dot layer on the quantum dot layer a second scattering layer; the first scattering layer optically extracts the luminescent light of the OLED device, so that the light totally reflected by the OLED device through the thin film encapsulation layer is emitted as much as possible; the light extracted by the first scattering layer reaches the quantum dot layer, and the quantum is excited
  • the dots are light-toned to emit light of a desired color; since the light excited by the quantum dot layer is disordered and dispersed, the second scattering layer performs orderly light extraction of the light excited by the quantum dot layer, so that the OLED display panel Evenly emit light to improve luminous efficiency.
  • the OLED display panel of the invention has good light uniformity and high luminous efficiency.
  • FIG. 1 is a flow chart of a method of fabricating an OLED display panel of the present invention
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED display panel of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating an OLED display panel of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating an OLED display panel of the present invention.
  • FIG. 5 is a schematic diagram of step S4 of the method for fabricating an OLED display panel of the present invention and a schematic diagram of the OLED display panel of the present invention.
  • a method for fabricating an OLED display panel of the present invention includes the following steps:
  • Step S1 please refer to FIG. 2, providing a substrate 10, forming an OLED device 20 on the substrate 10, forming a thin film encapsulation layer 30 covering the OLED device 20 on the substrate 10;
  • Step S2 please refer to FIG. 3, forming a first scattering layer 41 on the thin film encapsulation layer 30;
  • Step S3 please refer to FIG. 4, forming a quantum dot layer 42 on the first scattering layer 41;
  • Step S4 referring to FIG. 5, a second scattering layer 43 is formed on the quantum dot layer 42.
  • the present invention forms a first scattering layer 41 on the thin film encapsulation layer 30, a quantum dot layer 42 on the first scattering layer 41, and a second scattering layer on the quantum dot layer 42. 43.
  • the first scattering layer 41 performs light extraction on the illuminating light of the OLED device 20, so that the light totally reflected by the OLED device 20 through the thin film encapsulation layer 30 is emitted as much as possible; the light extracted by the first scattering layer 41 reaches the quantum dot layer 42.
  • the quantum dots are excited to perform light color matching, and emit light of a desired color; since the light excited by the quantum dot layer 42 is relatively disordered and dispersed, the second scattering layer 43 aligns the light excited by the quantum dot layer 42 with the ordered light.
  • the extraction makes the OLED display panel emit light uniformly, improving the luminous efficiency.
  • the illuminating light of the OLED device 20 is ultraviolet light or blue light, which is advantageous for reducing the preparation difficulty of the OLED device 20, and has a wide excitation wavelength range and a large adjustable light color range.
  • the quantum dot layer 42 excites the quantum dots to emit white light.
  • a thin film encapsulation layer 30 covering the OLED device 20 is formed on the substrate 10 by a vacuum film formation method.
  • the material of the thin film encapsulation layer 30 is silicon oxide or silicon nitride; the thin film encapsulation layer 30 has a thickness of 2 um to 10 um.
  • the thin film encapsulation layer 30 is a structure in which a plurality of barrier layers and a plurality of buffer layers are alternately stacked to improve the ability to block water oxygen.
  • the first scattering layer 41 is formed on the thin film encapsulation layer 30 by atomic layer deposition (ALD) or coating.
  • ALD atomic layer deposition
  • the material of the first scattering layer 41 is inorganic oxide particles, such as zinc oxide (ZnO), zirconium dioxide (ZrO 2 ), and has a large refractive index, which is favorable for light extraction; the first scattering layer 41 The thickness is less than 20um.
  • a quantum dot layer 42 is formed on the first scattering layer 41 by a solution method, and the solution is ethanol, isopropyl alcohol or acetone, and an organic solvent formed by adding an emulsifier and a dispersing agent.
  • the material of the quantum dot layer 42 is cadmium sulfide (CdS) or cadmium selenide (CdSe); the quantum dot layer 42 has a thickness of less than 10 um.
  • a second scattering layer 43 of a nano-network film structure is formed on the quantum dot layer 42 by ion exchange self-assembly.
  • the nano-mesh film has good uniformity and order structure, and is favorable for orderly light extraction of the light excited by the quantum dot layer 42.
  • the material of the second scattering layer 43 is a multi-arm titanium dioxide or a multi-arm cadmium sulfide nanorod; the thickness of the second scattering layer 43 is less than 10 um.
  • the present invention further provides an OLED display panel, comprising: a substrate 10 , an OLED device 20 disposed on the substrate 10 , and disposed on the substrate 10 .
  • a thin film encapsulation layer 30 covering the OLED device 20, a first scattering layer 41 disposed on the thin film encapsulation layer 30, a quantum dot layer 42 disposed on the first scattering layer 41, and a quantum dot layer 42 disposed on the quantum dot layer 42
  • the second scattering layer 43 on.
  • a first scattering layer 41 is disposed on the thin film encapsulation layer 30, a quantum dot layer 42 is disposed on the first scattering layer 41, and a second scattering layer is disposed on the quantum dot layer 42. 43.
  • the first scattering layer 41 performs light extraction on the illuminating light of the OLED device 20, so that the light totally reflected by the OLED device 20 through the thin film encapsulation layer 30 is emitted as much as possible; the light extracted by the first scattering layer 41 reaches the quantum dot layer 42.
  • the quantum dots are excited to perform light color matching, and emit light of a desired color; since the light excited by the quantum dot layer 42 is relatively disordered and dispersed, the second scattering layer 43 aligns the light excited by the quantum dot layer 42 with the ordered light.
  • the extraction makes the OLED display panel emit light uniformly, improving the luminous efficiency.
  • the illuminating light of the OLED device 20 is ultraviolet light or blue light, which is advantageous for reducing the preparation difficulty of the OLED device 20, and has a wide excitation wavelength range and a large adjustable light color range.
  • the quantum dot layer 42 excites the quantum dots to emit white light.
  • a thin film encapsulation layer 30 covering the OLED device 20 is formed on the substrate 10 by a vacuum film formation method.
  • the material of the thin film encapsulation layer 30 is silicon oxide or silicon nitride; the thin film encapsulation layer 30 has a thickness of 2 um to 10 um.
  • the thin film encapsulation layer 30 is a structure in which a plurality of barrier layers and a plurality of buffer layers are alternately stacked to improve the ability to block water oxygen.
  • the first scattering layer 41 is formed on the thin film encapsulation layer 30 by atomic layer deposition or coating.
  • the material of the first scattering layer 41 is inorganic oxide particles, such as zinc oxide, zirconium dioxide, and has a large refractive index, which is favorable for light extraction; the thickness of the first scattering layer 41 is less than 20 um.
  • a quantum dot layer 42 is formed on the first scattering layer 41 by a solution method, and the solution is ethanol, isopropanol or acetone, and an organic solvent formed by adding an emulsifier and a dispersant.
  • the material of the quantum dot layer 42 is cadmium sulfide or cadmium selenide; the quantum dot layer 42 has a thickness of less than 10 um.
  • a second scattering layer 43 of a nano-network film structure is formed on the quantum dot layer 42 by ion exchange self-assembly.
  • the nano-mesh film has good uniformity and order structure, and is favorable for orderly light extraction of the light excited by the quantum dot layer 42.
  • the material of the second scattering layer 43 is a multi-arm titanium dioxide or a multi-arm cadmium sulfide nanorod; the thickness of the second scattering layer 43 is less than 10 um.
  • the method for fabricating an OLED display panel of the present invention forms a quantum dot layer on the first scattering layer by forming a first scattering layer on the thin film encapsulation layer, and forms a quantum dot layer on the quantum dot layer.
  • the first scattering layer optically extracts the luminescent light of the OLED device, so that the light totally reflected by the OLED device through the thin film encapsulation layer is emitted as much as possible; the light extracted by the first scattering layer reaches the quantum dot layer, and the quantum dot is excited Performing light tones to emit light of a desired color; since the light excited by the quantum dot layer is disordered and dispersed, the second scattering layer performs orderly light extraction of the light excited by the quantum dot layer, thereby making the OLED display panel uniform Light out, improve luminous efficiency.
  • the OLED display panel of the invention has good light uniformity and high luminous efficiency.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示面板及其制作方法。该OLED显示面板的制作方法通过在薄膜封装层（30）上形成第一散射层（41），在所述第一散射层（41）上形成量子点层（42），在所述量子点层（42）上形成第二散射层（43）；第一散射层（41）将OLED器件发光光线进行光提取，使得OLED器件经薄膜封装层（30）而全反射的光线尽可能的出射；第一散射层（41）提取出来的光线到达量子点层（42），激发量子点进行光色调配，发出需要的颜色的光线；由于量子点层（42）激发出的光线比较无序且分散，第二散射层（43）将量子点层（42）激发出的光线进行有序的光提取，使得OLED显示面板均匀出光，提高发光效率。

Description

OLED显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
由于界面折射率的关系，OLED器件在发光过程中会发生全反射，大部分的光由于在OLED显示面板内部进行折射或反射，而无法有效的提取出来，导致光损失较多，而现有的使用较多光提取的方法，大多是在OLED器件内部及玻璃基板内部进行改进，但是这种方法实现较难，OLED器件内部的发光色度得不到有效保证；或者直接增加外置的光提取装置，而加入外置的光提取装置，会增加整个OLED显示面板的厚度，不利于未来商业化生产。
发明内容
本发明的目的在于提供一种OLED显示面板的制作方法，能够使得OLED显示面板均匀出光，提高发光效率。
本发明的目的还在于提供一种OLED显示面板，出光均匀性好，发光效率高。
为实现上述目的，本发明提供了一种OLED显示面板的制作方法，包括如下步骤：
步骤S1、提供基板，在所述基板上形成OLED器件，在所述基板上形成覆盖OLED器件的薄膜封装层；
步骤S2、在所述薄膜封装层上形成第一散射层；
步骤S3、在所述第一散射层上形成量子点层；
步骤S4、在所述量子点层上形成第二散射层。
所述步骤S1中，采用真空成膜的方法在所述基板上形成覆盖OLED器件的薄膜封装层；所述步骤S2中，采用原子层沉积或者涂布的方法在所述薄膜封装层上形成第一散射层。
所述步骤S3中，采用溶液法在所述第一散射层上形成量子点层。
所述步骤S4中，采用离子交换自组装的方法在所述量子点层上形成纳米网状薄膜结构的第二散射层。
所述薄膜封装层的材料为氧化硅或氮化硅；所述薄膜封装层的厚度为2um-10um；所述第一散射层的材料为无机氧化物颗粒；所述第一散射层的厚度小于20um；所述量子点层的材料为硫化镉或硒化镉；所述量子点层的厚度小于10um；所述第二散射层的材料为多臂二氧化钛或多臂硫化镉纳米棒；所述第二散射层的厚度小于10um。
本发明还提供一种OLED显示面板，包括：基板、设于所述基板上的OLED器件、设于所述基板上并覆盖OLED器件的薄膜封装层、设于所述薄膜封装层上的第一散射层、设于所述第一散射层上的量子点层以及设于所述量子点层上的第二散射层。
采用真空成膜的方法在所述基板上形成覆盖OLED器件的薄膜封装层；采用原子层沉积或者涂布的方法在所述薄膜封装层上形成第一散射层。
采用溶液法在所述第一散射层上形成量子点层。
采用离子交换自组装的方法在所述量子点层上形成纳米网状薄膜结构的第二散射层。
所述薄膜封装层的材料为氧化硅或氮化硅；所述薄膜封装层的厚度为2um-10um；所述第一散射层的材料为无机氧化物颗粒；所述第一散射层的厚度小于20um；所述量子点层的材料为硫化镉或硒化镉；所述量子点层的厚度小于10um；所述第二散射层的材料为多臂二氧化钛或多臂硫化镉纳米棒；所述第二散射层的厚度小于10um。
本发明的有益效果：本发明的OLED显示面板的制作方法通过在所述薄膜封装层上形成第一散射层，在所述第一散射层上形成量子点层，在所述量子点层上形成第二散射层；第一散射层将OLED器件发光光线进行光提取，使得OLED器件经薄膜封装层而全反射的光线尽可能的出射；第一散射层提取出来的光线到达量子点层，激发量子点进行光色调配，发出需要的颜色的光线；由于量子点层激发出的光线比较无序且分散，第二散射层将量子点层激发出的光线进行有序的光提取，使得OLED显示面板均匀出光，提高发光效率。本发明的OLED显示面板，出光均匀性好，发光效率高。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的OLED显示面板的制作方法的流程图；
图2为本发明的OLED显示面板的制作方法的步骤S1的示意图；
图3为本发明的OLED显示面板的制作方法的步骤S2的示意图；
图4为本发明的OLED显示面板的制作方法的步骤S3的示意图；
图5为本发明的OLED显示面板的制作方法的步骤S4的示意图暨本发明的OLED显示面板的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明的OLED显示面板的制作方法包括如下步骤：
步骤S1、请参阅图2，提供基板10，在所述基板10上形成OLED器件20，在所述基板10上形成覆盖OLED器件20的薄膜封装层30；
步骤S2、请参阅图3，在所述薄膜封装层30上形成第一散射层41；
步骤S3、请参阅图4，在所述第一散射层41上形成量子点层42；
步骤S4、请参阅图5，在所述量子点层42上形成第二散射层43。
需要说明的是，本发明在所述薄膜封装层30上形成第一散射层41，在所述第一散射层41上形成量子点层42，在所述量子点层42上形成第二散射层43；第一散射层41将OLED器件20发光光线进行光提取，使得OLED 器件20经薄膜封装层30而全反射的光线尽可能的出射；第一散射层41提取出来的光线到达量子点层42，激发量子点进行光色调配，发出需要的颜色的光线；由于量子点层42激发出的光线比较无序且分散，第二散射层43将量子点层42激发出的光线进行有序的光提取，使得OLED显示面板均匀出光，提高发光效率。
具体地，所述OLED器件20的发光光线为紫外光或蓝光，有利于降低OLED器件20的制备难度，且可激发波长范围较广，可调节光色幅度较大。当OLED器件20的发光光线为紫外光或蓝光时，量子点层42激发量子点发出白光。
具体地，所述步骤S1中，采用真空成膜的方法在所述基板10上形成覆盖OLED器件20的薄膜封装层30。
进一步地，所述薄膜封装层30的材料为氧化硅或氮化硅；所述薄膜封装层30的厚度为2um-10um。
进一步地，所述薄膜封装层30为多层阻挡层与多层缓冲层交替层叠设置的结构，提高阻挡水氧的能力。
具体地，所述步骤S2中，采用原子层沉积(ALD)或者涂布的方法在所述薄膜封装层30上形成第一散射层41。
具体地，所述第一散射层41的材料为无机氧化物颗粒，例如氧化锌(ZnO)，二氧化锆(ZrO2)，折射率较大，有利于进行光提取；所述第一散射层41的厚度小于20um。
具体地，所述步骤S3中，采用溶液法在所述第一散射层41上形成量子点层42，其溶液为乙醇、异丙醇或丙酮，加入乳化剂和分散剂形成的有机溶剂。
具体地，所述量子点层42的材料为硫化镉(CdS)或硒化镉(CdSe)；所述量子点层42的厚度小于10um。
具体地，所述步骤S4中，采用离子交换自组装的方法在所述量子点层42上形成纳米网状薄膜结构的第二散射层43。该纳米网状薄膜结构均一性好且有序，有利于将量子点层42激发出的光线进行有序的光提取。
具体地，所述第二散射层43的材料为多臂二氧化钛或多臂硫化镉纳米棒；所述第二散射层43的厚度小于10um。
请参阅图5，基于上述的OLED显示面板的制作方法，本发明还提供一种OLED显示面板，包括：基板10、设于所述基板10上的OLED器件20、设于所述基板10上并覆盖OLED器件20的薄膜封装层30、设于所述薄膜封装层30上的第一散射层41、设于所述第一散射层41上的量子点层 42以及设于所述量子点层42上的第二散射层43。
需要说明的是，本发明在所述薄膜封装层30上设置第一散射层41，在所述第一散射层41上设置量子点层42，在所述量子点层42上设置第二散射层43；第一散射层41将OLED器件20发光光线进行光提取，使得OLED器件20经薄膜封装层30而全反射的光线尽可能的出射；第一散射层41提取出来的光线到达量子点层42，激发量子点进行光色调配，发出需要的颜色的光线；由于量子点层42激发出的光线比较无序且分散，第二散射层43将量子点层42激发出的光线进行有序的光提取，使得OLED显示面板均匀出光，提高发光效率。
具体地，所述OLED器件20的发光光线为紫外光或蓝光，有利于降低OLED器件20的制备难度，且可激发波长范围较广，可调节光色幅度较大。当OLED器件20的发光光线为紫外光或蓝光时，量子点层42激发量子点发出白光。
具体地，采用真空成膜的方法在所述基板10上形成覆盖OLED器件20的薄膜封装层30。
进一步地，所述薄膜封装层30的材料为氧化硅或氮化硅；所述薄膜封装层30的厚度为2um-10um。
进一步地，所述薄膜封装层30为多层阻挡层与多层缓冲层交替层叠设置的结构，提高阻挡水氧的能力。
具体地，采用原子层沉积或者涂布的方法在所述薄膜封装层30上形成第一散射层41。
具体地，所述第一散射层41的材料为无机氧化物颗粒，例如氧化锌，二氧化锆，折射率较大，有利于进行光提取；所述第一散射层41的厚度小于20um。
具体地，采用溶液法在所述第一散射层41上形成量子点层42，其溶液为乙醇、异丙醇或丙酮，加入乳化剂和分散剂形成的有机溶剂。
具体地，所述量子点层42的材料为硫化镉或硒化镉；所述量子点层42的厚度小于10um。
具体地，采用离子交换自组装的方法在所述量子点层42上形成纳米网状薄膜结构的第二散射层43。该纳米网状薄膜结构均一性好且有序，有利于将量子点层42激发出的光线进行有序的光提取。
具体地，所述第二散射层43的材料为多臂二氧化钛或多臂硫化镉纳米棒；所述第二散射层43的厚度小于10um。
综上所述，本发明的OLED显示面板的制作方法通过在所述薄膜封装 层上形成第一散射层，在所述第一散射层上形成量子点层，在所述量子点层上形成第二散射层；第一散射层将OLED器件发光光线进行光提取，使得OLED器件经薄膜封装层而全反射的光线尽可能的出射；第一散射层提取出来的光线到达量子点层，激发量子点进行光色调配，发出需要的颜色的光线；由于量子点层激发出的光线比较无序且分散，第二散射层将量子点层激发出的光线进行有序的光提取，使得OLED显示面板均匀出光，提高发光效率。本发明的OLED显示面板，出光均匀性好，发光效率高。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED显示面板的制作方法，包括如下步骤：
    步骤S1、提供基板，在所述基板上形成OLED器件，在所述基板上形成覆盖OLED器件的薄膜封装层；
    步骤S2、在所述薄膜封装层上形成第一散射层；
    步骤S3、在所述第一散射层上形成量子点层；
    步骤S4、在所述量子点层上形成第二散射层。
  2. 如权利要求1所述的OLED显示面板的制作方法，其中，所述步骤S1中，采用真空成膜的方法在所述基板上形成覆盖OLED器件的薄膜封装层；所述步骤S2中，采用原子层沉积或者涂布的方法在所述薄膜封装层上形成第一散射层。
  3. 如权利要求1所述的OLED显示面板的制作方法，其中，所述步骤S3中，采用溶液法在所述第一散射层上形成量子点层。
  4. 如权利要求1所述的OLED显示面板的制作方法，其中，所述步骤S4中，采用离子交换自组装的方法在所述量子点层上形成纳米网状薄膜结构的第二散射层。
  5. 如权利要求1所述的OLED显示面板的制作方法，其中，所述薄膜封装层的材料为氧化硅或氮化硅；所述薄膜封装层的厚度为2um-10um；所述第一散射层的材料为无机氧化物颗粒；所述第一散射层的厚度小于20um；所述量子点层的材料为硫化镉或硒化镉；所述量子点层的厚度小于10um；所述第二散射层的材料为多臂二氧化钛或多臂硫化镉纳米棒；所述第二散射层的厚度小于10um。
  6. 一种OLED显示面板，包括：基板、设于所述基板上的OLED器件、设于所述基板上并覆盖OLED器件的薄膜封装层、设于所述薄膜封装层上的第一散射层、设于所述第一散射层上的量子点层以及设于所述量子点层上的第二散射层。
  7. 如权利要求6所述的OLED显示面板，其中，采用真空成膜的方法在所述基板上形成覆盖OLED器件的薄膜封装层；采用原子层沉积或者涂布的方法在所述薄膜封装层上形成第一散射层。
  8. 如权利要求6所述的OLED显示面板，其中，采用溶液法在所述第一散射层上形成量子点层。
  9. 如权利要求6所述的OLED显示面板，其中，采用离子交换自组装 的方法在所述量子点层上形成纳米网状薄膜结构的第二散射层。
  10. 如权利要求6所述的OLED显示面板，其中，所述薄膜封装层的材料为氧化硅或氮化硅；所述薄膜封装层的厚度为2um-10um；所述第一散射层的材料为无机氧化物颗粒；所述第一散射层的厚度小于20um；所述量子点层的材料为硫化镉或硒化镉；所述量子点层的厚度小于10um；所述第二散射层的材料为多臂二氧化钛或多臂硫化镉纳米棒；所述第二散射层的厚度小于10um。
PCT/CN2018/105908 2018-05-16 2018-09-17 Oled显示面板及其制作方法 Ceased WO2019218555A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/307,139 US11239447B2 (en) 2018-05-16 2018-09-17 OLED display panel and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810469311.0 2018-05-16
CN201810469311.0A CN108682753B (zh) 2018-05-16 2018-05-16 Oled显示面板及其制作方法

Publications (1)

Publication Number Publication Date
WO2019218555A1 true WO2019218555A1 (zh) 2019-11-21

Family

ID=63806379

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/105908 Ceased WO2019218555A1 (zh) 2018-05-16 2018-09-17 Oled显示面板及其制作方法

Country Status (3)

Country Link
US (1) US11239447B2 (zh)
CN (1) CN108682753B (zh)
WO (1) WO2019218555A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109360904A (zh) * 2018-11-05 2019-02-19 京东方科技集团股份有限公司 显示基板、显示面板、显示基板的制备方法
CN109950416A (zh) * 2019-03-08 2019-06-28 深圳市华星光电半导体显示技术有限公司 显示面板的制作方法、显示面板及电子设备
CN109887978B (zh) * 2019-03-12 2021-01-12 京东方科技集团股份有限公司 显示基板、其制作方法及显示装置
CN112259693A (zh) * 2020-10-14 2021-01-22 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN114023789B (zh) * 2021-10-18 2023-05-30 深圳市华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080272367A1 (en) * 2007-05-01 2008-11-06 Cok Ronald S Light-emitting device having improved light output
CN102738403A (zh) * 2011-04-11 2012-10-17 三星移动显示器株式会社 有机发光二极管显示器
CN103403892A (zh) * 2011-03-31 2013-11-20 松下电器产业株式会社 半导体发光装置
CN106848080A (zh) * 2017-03-02 2017-06-13 瑞声光电科技(常州)有限公司 一种白光oled发光器件
CN107731868A (zh) * 2016-08-12 2018-02-23 三星显示有限公司 有机发光显示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2610361Y (zh) 2003-01-28 2004-04-07 中华映管股份有限公司 液晶皿结构
US9142732B2 (en) * 2013-03-04 2015-09-22 Osram Sylvania Inc. LED lamp with quantum dots layer
US9733505B2 (en) 2013-06-11 2017-08-15 Sakai Display Products Corporation Liquid crystal panel and method of forming groove in insulating film
JP6275418B2 (ja) 2013-09-03 2018-02-07 株式会社ジャパンディスプレイ 液晶表示装置
CN109254457A (zh) 2014-11-12 2019-01-22 群创光电股份有限公司 显示面板
CN204389840U (zh) 2015-01-04 2015-06-10 京东方科技集团股份有限公司 一种基板及光电显示装置
CN104821376A (zh) * 2015-04-24 2015-08-05 京东方科技集团股份有限公司 一种oled面板及其制造方法、显示装置
JP2019512103A (ja) * 2016-01-28 2019-05-09 コーニング インコーポレイテッド 量子ドット材料を分配する方法
KR102680862B1 (ko) * 2016-12-16 2024-07-03 삼성전자주식회사 반도체 발광장치
CN109212655B (zh) * 2017-06-30 2020-01-24 京东方科技集团股份有限公司 背光源及其制造方法、显示装置
KR102523976B1 (ko) * 2017-11-21 2023-04-20 삼성전자주식회사 디스플레이 장치
US10991856B2 (en) * 2017-12-21 2021-04-27 Lumileds Llc LED with structured layers and nanophosphors
CN108508667B (zh) 2018-04-20 2020-07-28 武汉华星光电技术有限公司 Tft阵列基板及液晶显示面板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080272367A1 (en) * 2007-05-01 2008-11-06 Cok Ronald S Light-emitting device having improved light output
CN103403892A (zh) * 2011-03-31 2013-11-20 松下电器产业株式会社 半导体发光装置
CN102738403A (zh) * 2011-04-11 2012-10-17 三星移动显示器株式会社 有机发光二极管显示器
CN107731868A (zh) * 2016-08-12 2018-02-23 三星显示有限公司 有机发光显示装置
CN106848080A (zh) * 2017-03-02 2017-06-13 瑞声光电科技(常州)有限公司 一种白光oled发光器件

Also Published As

Publication number Publication date
US11239447B2 (en) 2022-02-01
US20210083229A1 (en) 2021-03-18
CN108682753A (zh) 2018-10-19
CN108682753B (zh) 2020-04-07

Similar Documents

Publication Publication Date Title
WO2019218555A1 (zh) Oled显示面板及其制作方法
CN107170775B (zh) 采用薄膜封装的显示装置
CN105932039B (zh) Oled显示装置
WO2018094801A1 (zh) Oled显示装置及其制作方法
WO2019075856A1 (zh) 钙钛矿发光二极管及其制作方法
CN106654046A (zh) Oled显示面板及其制作方法
WO2018113017A1 (zh) Oled显示装置及其制作方法
WO2017190373A1 (zh) 自发光型显示装置及其制作方法
KR101654360B1 (ko) 유기 발광소자용 기판 및 그 제조방법
CN108538896A (zh) Oled像素结构及oled显示面板
CN105704869B (zh) 电致光致混合发光显示器件及其制作方法
CN107482126A (zh) Oled显示器及其制作方法
CN108630822B (zh) 一种顶发射oled器件的组件和顶发射oled器件
US12256594B2 (en) Light emitting diode and display device
WO2020001040A1 (zh) 发光器件及其制作方法、电子装置
KR101468972B1 (ko) 광산란층이 형성된 기판의 제조방법과 이에 의해 제조된 광산란층이 형성된 기판, 및 상기 광산란층이 형성된 기판을 포함하는 유기발광소자
KR101765183B1 (ko) 발광장치용 광추출층 및 그 형성방법
WO2018113005A1 (zh) Oled封装方法与oled封装结构
CN108565351B (zh) Oled显示装置及其制作方法
KR101488660B1 (ko) 유기발광소자용 기판, 그 제조방법 및 이를 포함하는 유기발광소자
CN106992257A (zh) 顶发射有机发光二极管及制造方法
CN208256731U (zh) 顶发光有机电致发光装置
KR101604495B1 (ko) 유기발광다이오드 표시장치 및 이를 제조하는 방법
US10297753B2 (en) Flexible organic light emitting diode and the manufacturing method thereof
CN1549659A (zh) 增加高分子有机发光二极管元件色饱和度的装置及其方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18919201

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18919201

Country of ref document: EP

Kind code of ref document: A1