WO2019218350A1 - 发光二极管 - Google Patents
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- WO2019218350A1 WO2019218350A1 PCT/CN2018/087515 CN2018087515W WO2019218350A1 WO 2019218350 A1 WO2019218350 A1 WO 2019218350A1 CN 2018087515 W CN2018087515 W CN 2018087515W WO 2019218350 A1 WO2019218350 A1 WO 2019218350A1
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- 230000000737 periodic effect Effects 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 34
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 6
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 230000000670 limiting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 150
- 229910002704 AlGaN Inorganic materials 0.000 description 17
- 238000010586 diagram Methods 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000035882 stress Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 102000016550 Complement Factor H Human genes 0.000 description 1
- 108010053085 Complement Factor H Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to the field of semiconductor device epitaxy, and in particular to a band gap having high energy level (Energy)
- a light-emitting diode is a semiconductor solid-state light-emitting device that uses a semiconductor PN junction as a light-emitting material to directly convert electricity into light.
- the light emitting diode generally includes an epitaxial structure of an N-type semiconductor layer, a light-emitting region, and a P-type semiconductor layer.
- a multi-quantum well structure is often used in the illuminating region.
- the multi-quantum well structure is initially a stack of two different semiconductor material films stacked on each other to form electrons or holes. The luminescence of the multiple quantum wells is limited by electron-hole pairs in the well layer. Radiation composite implementation.
- the carrier In use, after the voltage is applied across the LED, the carrier enters the multiple quantum well through tunneling, diffusion or thermal emission. Most of the injected carriers are captured by the multiple quantum well and confined in the well layer.
- the internal radiation combines to emit light, and the wavelength of the light emission depends on the energy level band gap of the well layer material used. Luminance is dependent on internal quantum efficiency and light extraction efficiency, while increasing internal quantum efficiency is mainly through the adjustment of multiple quantum well structures such as well depth, thickness, composition and structure.
- the present invention provides an LED epitaxial wafer for use in a light emitting diode, which is improved by adding a semiconductor layer of a higher energy band gap in a periodic structure of a potential multiwell and a barrier semiconductor stack of a conventional multiple quantum well.
- the energy level band gap distribution of the periodic structure improves the luminous efficiency and leakage function.
- the technical solution of the present invention is: an LED epitaxial wafer comprising an N-type conduction layer, a multiple quantum well, and a P-type conduction layer, wherein: at least two periodic structures of the multiple quantum wells One cycle stacking order is a first sub-layer, a second sub-layer, and a third sub-layer, the first sub-layer is a potential well, the second sub-layer is a potential barrier, and an energy level of the first sub-layer Band gap Egl, energy level band gap Eg2 and third sublayer of the second sublayer
- the relationship of the energy level band gap Eg3 is Egl ⁇ Eg2 ⁇ Eg3.
- the multiple quantum well comprises a periodic stack structure, including a first sub-layer and a second sub-layer stack being at least one period, and the at least stacking order is a first sub-layer, a second sub-layer, and a At least two cycles of the three sublayers.
- the third sub-layer Eg3 has a difference of at least 1.5 eV from Eg2.
- the third sub-layer has a thickness of 30 angstroms or less.
- the multiple quantum wells have a total thickness of 100 to 3000 angstroms.
- the first sub-layer has a thickness of 50-80 angstroms.
- the second sub-layer has a thickness of 150 to 210 angstroms.
- the light emitting diode is a gallium nitride based diode.
- the third sub-layer is AlwGal-wN, 0.95 ⁇ w ⁇ l °
- the Eg2 of the second sub-layer and the Egl of the first sub-layer have a band gap difference of 0.25-0.3 OeV.
- the light emitting diode emits a wavelength region of ultraviolet light, and more preferably, the light emitting wavelength is 350-370 nm.
- the Egl range of the first sub-layer is between 3.3 and 3.5 eV
- the Eg2 range of the second sub-layer is between 3.55 and 3.90.
- the Egl range of the first sub-layer is between 3.3 and 3.4 eV
- the Eg2 range of the second sub-layer is between 3.59 and 3.7 eV
- the Eg3 of the third sub-layer is Between 6.0 ⁇ 6.2eV.
- the first sub-layer is InxGal-xN (0 ⁇ x ⁇ 1), and Eg is adjusted by In content adjustment. More preferably, the x content is between 0 and 0.03. .
- the second sub-layer is InyAlzGal-y-zN (0 ⁇ y ⁇ l, 0 ⁇ z ⁇ l), and Eg2 is adjusted by adjusting the In and A1 contents. More preferably, the y content is between 0 and 0.02, and the z content is between 0.06 and 0.12.
- the third sub-layer is AlwGal-wN (0 ⁇ w ⁇ l), and Eg3 is adjusted by adjusting the A1 content, and the w content is between 0.95-1.
- the third sub-layer is A1N, Eg3 is 6.2, and the third sub-layer has a thickness of 10-15 angstroms.
- the light-emitting diode obtained by the multiple quantum well can be fabricated as a formal or flip-chip or a vertical or miniature light emitting diode.
- the multiple quantum well comprises a periodic stacking structure, wherein a stacking order of all the periodic stacked structures is a stack of at least two periods of the first sub-layer, the second sub-layer and the third sub-layer
- a stacking order of all the periodic stacked structures is a stack of at least two periods of the first sub-layer, the second sub-layer and the third sub-layer
- the relationship between the energy level band gap Egl of the first sub-layer, the energy level band gap Eg2 of the second sub-layer, and the energy level band gap Eg3 of the third sub-layer is Egl ⁇ Eg2 ⁇ Eg3.
- the first sub-layer is further formed by stacking at least two semiconductor materials, and the stacking manner of the at least two semiconductor materials is gradually approaching the second sub-layer side.
- E g is from low to high.
- the second sub-layer is further formed by stacking at least two semiconductor materials, and the stacking manner of the at least two semiconductor materials is gradually away from the first sub-layer side.
- E g is from low to high.
- the third sub-layer is further formed by stacking at least two semiconductor materials, and the stacking manner of the at least two semiconductor materials is gradually away from the second sub-layer side.
- Eg is from low to high and both are higher than Eg2 of the second sub-layer. More preferably, the Eg of at least two semiconductor materials of the third sub-layer is higher than the Eg2 of the second sub-layer by at least 1.5 eV.
- the epitaxial structure proposed by the present invention can be widely applied to light emitting diodes of all light emitting regions, and the multiple quantum well structure provides luminescent radiation in a light emitting diode, which is composed of two different semiconductor materials in a conventional two layers.
- the well and the repetitive periodic stacking multi-quantum well structure wherein at least two periodic structures of the multi-quantum well grow a band gap higher than the barrier layer (Eg2) on each stacked barrier layer
- the additional barrier layer (Eg3), the additional barrier can provide better limitations.
- the energy band is tilted under the applied bias, such as the difference between the third sublayer Eg3 and Eg2. At 1.5 eV, a high-band gap barrier will be generated.
- This special energy band difference design carrier overflow can be prevented, radiation compounding efficiency can be increased, and brightness can be improved.
- the high band gap means closer to the insulation, and the proper thickness Eg3 layer is controlled in each layer of the MQW, which can effectively ensure the limitation effect on the carrier, and can block the reverse current and improve the aging leakage. Current capability.
- FIG. 1 is a schematic structural view of a sample-light emitting diode according to an embodiment of the present invention.
- 2a and 2b are TEM diagrams of a sample-light emitting diode according to an embodiment of the present invention.
- FIG. 3 is an X-ray energy line scan component profile analysis diagram of a quantum well of a light emitting diode.
- Embodiment 4 is a wavelength-luminance scatter diagram of Embodiment 1 of the present invention.
- FIG. 5-8 are schematic diagrams showing the structure of a light emitting diode according to Embodiments 2 to 7 of the present invention.
- a first preferred embodiment of the present invention is a gallium nitride based light emitting diode epitaxial structure, but is not limited thereto.
- the LED can have a front or flip type structure.
- 1 shows a schematic diagram of an epitaxial structure used in the light emitting diode.
- the epitaxial structure includes, in order from bottom to top, an N-type conductive layer 110, a light-emitting layer 120, a P-type electron blocking layer 130, and a P-type conductive layer 140.
- the epitaxial structure of the light emitting diode is epitaxially grown on the substrate by MOCVD growth.
- the epitaxial structure obtains a chip by transferring a P-type conduction layer side onto a permanent substrate, and the present invention is obtained by using an existing vertical light emitting diode preparation method.
- the N-type conduction layer 110 and the P-type conduction layer 140 are made of a nitride-based semiconductor layer having a wider band gap than the light-emitting layer 120, and in a specific embodiment, an AlGaN layer or GaN may be used. .
- the P-type electron blocking layer 130 is located between the light-emitting layer 120 and the P-type conductive layer 140, and has an energy band gap larger than that of the P-type conductive layer 140, and a nitride-based semiconductor layer containing A1. Made of, it may be a single layer or a multilayer structure, such as a superlattice structure.
- the luminescent layer 120 is composed of at least two periodic structures, each of which generally comprises at least two thin layers of different materials, the material of which is a nitride-based semiconductor layer, preferably unintentionally doped, wherein at least The two periodic structures A include a first sub-layer, a second sub-layer and a third sub-layer, wherein the energy band gap Egl of the first sub-layer, the energy level band gap Eg2 of the second sub-layer, and the third sub-layer
- the relationship of the energy level bandgap Eg3 is Egl ⁇ Eg2 ⁇ E g3 , where the first sublayer is used as a well, the second sublayer is used as a barrier, and a third sublayer is superimposed on the barrier layer to form an additional barrier.
- the energy band caused by the applied bias is tilted, and the carrier gap is further prevented by the Eg3 (potential barrier spike).
- Eg3 potential barrier spike
- Sub-overflow increase the radiation composite efficiency and increase the brightness.
- a high band gap means closer to the insulation.
- growing an appropriate thickness of the Eg3 layer in each layer of the MQW will better block the reverse current and improve the aging leakage current capability.
- the stepped barrier (Eg2 ⁇ Eg3) also helps to adjust the stress of the entire MQW well barrier.
- the third sub-layer Eg3 is preferably at least 1.5 eV larger than Eg2 to ensure its confinement effect on carriers, and effectively prevent overflow of carriers.
- the thickness is preferably 30 ⁇ or less.
- the thicknesses of the first sub-layer and the second sub-layer are used to adjust the thickness of the well and the barrier. If the thickness of the third sub-layer is thin, the limitation effect provided by the additional barrier is not obvious, if the thickness of the third sub-layer is thicker , which will result in poor conductivity The performance of the illuminating zone is lowered and the voltage is increased.
- the structure is more suitably applied to a nitride-based light emitting diode having an emission wavelength of 210 to 420 nm.
- the periodic structure A may employ InGaN/AlGaN/AIN, GaN/AlGaN/AIN or InGaN/AlInGaN/AIN or InGaN/GaN/AIN.
- the first sub-layer 121 may adopt In x Ga ⁇ N, wherein the value of x may adjust the wavelength of the light. If x is larger, the wavelength of the light is shorter.
- the second sub-layer 122 may be In y Al z Ga i y - N (where (KySl, 0 ⁇ z ⁇ l, y + z ⁇ l), the third sub-layer 123 is preferably AlwGal-wN (w is between 0 and 1).
- Egl can be adjusted by the In content of the first sub-layer
- Eg2 can be adjusted by the second sub-layer A1 and In content
- Eg3 can be adjusted by the content of the third sub-layer A1.
- the first sub-layer Egl is preferably 3.3-3.5 eV, more preferably
- the thickness of the second sublayer Eg2 is preferably 3.55 to 3.9 eV, more preferably 3.59 to 3.70 eV, and preferably 300 angstroms or less.
- the Eg3 of the third sublayer is greater than 1.5 eV. More preferably, the third sub-layer is A1N, Eg3 is 6.2 eV, and the third sub-layer has a thickness of 10-15 angstroms.
- the nitride light-emitting diode is mainly doped with In and A1 to obtain a well of a quantum well. And the material of the barrier, and the arrangement of the lattice constant is InN ⁇ GaN ⁇ AlN, by the present invention, the multi-quantum well structure is stepped by the lattice constant Variety
- the permanent substrate is a silicon substrate
- the P-type electron blocking layer is AlGaN.
- the chip size is 325pm*325 ⁇ im, wherein the sample 1 adopts the epitaxial structure shown in FIG. 1, the growth substrate is sapphire, the N-type semiconductor layer is AlGaN, the P-type semiconductor layer is AlGaN, and the luminescent layer 120 is specifically made of InxGal-xN ( x content is 0.5
- the average thickness of the layer is 76 angstroms / AlzGal-zN (z content is 8 at%, the average thickness of the layer is 177 angstroms) / A1 N three layers alternately stacked (layer average thickness is 10 angstroms), the number of cycles is 5, forming
- the high-energy bandgap structure, sample 2 is different, the multiple quantum wells are stacked with conventional InGaN and AlGaN, the other layers are the same as sample 1, and the multiple quantum well layers are made of InxGal-xN (x content is 0.5 at%, layer
- the average thickness is 76 angstroms / AlzGal-zN (z content is 8 at%, layer average thickness is 177 angstroms). Two layers are alternately stacked to form one cycle. The number of cycles is 5
- Fig. 2a is a transmission electron micrograph of sample 1, from which it can be found that the multi-quantum well of the light-emitting layer has a stack structure of five cycles.
- Fig. 2b is a transmission electron micrograph of the magnification of the sample-multiple quantum well layer, which can measure the thickness distribution of the first sublayer, the second sublayer and the third sublayer in each periodic structure.
- 3 is an EDX linear scan component profile analysis diagram of a multiple quantum well, from which the number of periodic structures and the trend of A1 content in each cycle can be seen, and the stacking manner and relative of each periodic structure are roughly determined. thickness.
- the carrier disk used for MOCVD growth of the epitaxial wafer is a circular structure, bearing
- the epitaxial wafers at different positions on the disc may result in different growth qualities, so the sample of the same position in the carrier tray and the two epitaxial wafer samples of the sample 2 are compared, wherein the solid point test data on the right side represents two of the sample one.
- the test data for the solid points on the left represents the growth samples at two locations of sample two. It can be seen from Fig.
- the emission wavelengths of the two samples are distributed in the wavelength range of 365-370 nm, and the luminescence brightness of the two samples of the sample one is significantly higher than that of the sample two, that is, the brightness of the sample one is greatly improved.
- the H/C of sample one (a and b) is 78-80% compared to conventional H/C® (less than 70%) high, effectively improving the brightness stability of hot operation.
- the periodic structure of the light emitting layer 120 of the light emitting diode is mainly composed of the first periodic structure A (including the first sub-layer 121, the second sub-layer 122, and the third sub-layer 123).
- the luminescent layer 120 may also be a combined structure, for example, composed of at least a first periodic structure A and a second periodic structure B, wherein the first periodic structure
- the sub-layers of A may be arranged with reference to the structure of Embodiment 1.
- the second periodic structure B only needs to be composed of the fourth sub-layer 12 4 and the fifth sub-layer 125, wherein the materials of the fourth and fifth sub-layers may be The first sub-layer to the second sub-layer are the same or different.
- the first periodic structure A is disposed adjacent to the P-type electron blocking layer 130
- the second periodic structure B is disposed adjacent to the N-type conducting layer 110
- the fourth sub-layer 124 is The first sub-layer 121 has the same material layer
- the fifth sub-layer 125 has the same material as the second sub-layer 122.
- the first periodic structure A is the structure of the sample one: InGaN/AlGaN/AIN
- the number of cycles is two or more.
- the second periodic structure B adopts the structure of the sample two InGaN/AlGaN, and the number of cycles is one or more, for example, 1-28, see FIG.
- the first periodic structure A is disposed adjacent to the N-type conduction layer 110
- the second periodic structure B is disposed adjacent to the electron blocking layer 130
- the fourth sub-layer 124 is disposed first.
- the sub-layer 121 has the same material layer
- the fifth sub-layer 125 is made of the same material as the second sub-layer 122.
- the first periodic structure A is Sample 1 of InGaN/AlGaN/AIN
- the number of cycles is two or more, for example, 2 -29 cycles
- the second cycle structure B uses the structure of the sample two InGaN / AlGaN, the number of cycles is more than one, for example 1-28.
- the first sub-layer of the at least one periodic structure is a combination of two semiconductor materials, and the stacking order of the two semiconductor layer materials 1211 and 1212 is Eg from low to high. form.
- the structure of sample one: InGaN/AlGaN/AIN the number of cycles is two or more, for example, 2-29 cycles, wherein at least one cycle of InxGal-xN is two different contents of In (specific x content is 0 ⁇ 0.03 ) Stacked, as shown in Figure 6.
- the second sub-layer of at least one periodic structure is a combination of two semiconductor materials, and the stacking order of the two semiconductor layer materials 1221 and 1222 is a low to high Eg form.
- the structure of sample one InGaN/AlGaN/AIN
- the number of cycles is 2 or more, for example, 2-29 cycles
- the second sublayer in at least one cycle is composed of InyAlzGal-y-zN of different y and z, through
- the Eg of at least two semiconductor materials of the second sub-layer is adjusted with the adjustment of the A1 content. More preferably, the y content is between 0 and 0.02, and the z content is between 0.06 and 0.12, as shown in FIG.
- the third sub-layer of at least one periodic structure is a combination of two semiconductor materials, and the stacking order of the at least two semiconductor layer materials 1231 and 1232 is Eg from low to high. form.
- the structure of sample one: InGaN/AlGaN/AIN the number of cycles is 2 or more, for example, 2-29 cycles, and more preferably, A1N is replaced by AlGaN and A1N in at least one cycle, and the third sublayer is at least two.
- the Eg of the semiconductor material is preferably at least 1.5 eV greater than Eg2, as shown in FIG.
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Abstract
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Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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KR1020207036317A KR102444467B1 (ko) | 2018-05-18 | 2018-05-18 | 발광 다이오드 |
JP2020544497A JP7085008B2 (ja) | 2018-05-18 | 2018-05-18 | 発光ダイオード |
EP18919298.2A EP3796401A4 (en) | 2018-05-18 | 2018-05-18 | LIGHT EMITTING DIODE |
PCT/CN2018/087515 WO2019218350A1 (zh) | 2018-05-18 | 2018-05-18 | 发光二极管 |
CN202310857688.4A CN116895717A (zh) | 2018-05-18 | 2018-05-18 | 发光二极管 |
CN201880025463.XA CN110582857B (zh) | 2018-05-18 | 2018-05-18 | 发光二极管 |
US17/096,042 US11538960B2 (en) | 2018-05-18 | 2020-11-12 | Epitaxial light emitting structure and light emitting diode |
US18/067,314 US20230122025A1 (en) | 2018-05-18 | 2022-12-16 | Semiconductor light emitting device |
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PCT/CN2018/087515 WO2019218350A1 (zh) | 2018-05-18 | 2018-05-18 | 发光二极管 |
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US17/096,042 Continuation-In-Part US11538960B2 (en) | 2018-05-18 | 2020-11-12 | Epitaxial light emitting structure and light emitting diode |
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EP (1) | EP3796401A4 (zh) |
JP (1) | JP7085008B2 (zh) |
KR (1) | KR102444467B1 (zh) |
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WO (1) | WO2019218350A1 (zh) |
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CN115377259B (zh) * | 2022-10-26 | 2023-01-31 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
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