WO2019207920A1 - Procédé de montage et dispositif de montage pour éléments semi-conducteurs - Google Patents

Procédé de montage et dispositif de montage pour éléments semi-conducteurs Download PDF

Info

Publication number
WO2019207920A1
WO2019207920A1 PCT/JP2019/005756 JP2019005756W WO2019207920A1 WO 2019207920 A1 WO2019207920 A1 WO 2019207920A1 JP 2019005756 W JP2019005756 W JP 2019005756W WO 2019207920 A1 WO2019207920 A1 WO 2019207920A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
semiconductor element
substrate
adhesive layer
mounting
Prior art date
Application number
PCT/JP2019/005756
Other languages
English (en)
Japanese (ja)
Inventor
石井　寛之
光 水野
大喜多　健三
Original Assignee
Jsr株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr株式会社 filed Critical Jsr株式会社
Publication of WO2019207920A1 publication Critical patent/WO2019207920A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips

Definitions

  • the present invention relates to a semiconductor element mounting method and a mounting apparatus.
  • a semiconductor module usually has a plurality of semiconductor elements mounted thereon.
  • a micro LED display is a display in which light emitting diodes (LEDs) are arranged as sub-pixels, and it is required to mount LEDs having a size of several tens of ⁇ m ⁇ several tens of ⁇ m on a circuit board with high accuracy.
  • LEDs light emitting diodes
  • the LEDs are arranged by selectively picking up a plurality of LEDs by a carrier member (transfer head). Specifically, the LEDs held on the substrate by an adhesive are selectively selected by the transfer head. A plurality of pickups are performed, and then the plurality of LEDs are collectively arranged on a circuit board (for example, see Patent Document 1).
  • Such an adhesive is required to have the ability to hold the LED on the substrate and the ability to selectively reduce the adhesive force when the LED is selectively picked up by the transfer head.
  • a manufacturing method of a micro LED display using an adhesive that can reduce adhesive strength by being cured by ultraviolet rays is known (see, for example, Patent Document 2).
  • the semiconductor elements are used to avoid adverse effects such as damage to the semiconductor elements due to light irradiation. It is necessary to devise such that the light is not irradiated.
  • the present inventors have studied to solve the above problems. As a result, the present inventors have found that the above problems can be solved by a semiconductor element mounting method and mounting apparatus having the following configuration, and have completed the present invention.
  • the present invention relates to the following [1] to [11], for example.
  • [1] (1) A step of disposing a semiconductor element on a first substrate through an adhesive layer including at least a laser-decomposable adhesive layer; (2) laser from the first substrate side to the laser-decomposable adhesive layer. (3) a step of picking up the semiconductor element from the first substrate by holding the semiconductor element on a carrier member; and (4) the semiconductor element picked up on a second substrate.
  • a method for mounting a semiconductor element comprising: a step of mounting.
  • the laser beam is a solid-state laser beam.
  • the solid-state laser light is 2 to 4 times higher than a YAG laser.
  • the laser beam is selectively applied to the laser-decomposable adhesive layer at a location corresponding to a semiconductor element to be picked up.
  • the laser beam is selectively irradiated.
  • An apparatus for mounting a semiconductor element comprising: a carrier member that picks up the semiconductor element from the first substrate by holding the element; and a placement portion on which the second substrate is placed.
  • the present invention it is possible to provide a method for mounting a semiconductor element that can be mounted without adversely affecting the semiconductor element, and to provide a mounting apparatus used for mounting the semiconductor element.
  • FIG. 1 illustrates an example of a semiconductor element mounting process according to the present invention.
  • the mounting method of the semiconductor element of the present invention is (1) A step of disposing a semiconductor element on the first substrate via an adhesive layer including at least a laser-decomposable adhesive layer; (2) irradiating the laser decomposable adhesive layer with laser light from the first substrate side; (3) a step of picking up the semiconductor element from the first substrate by holding the semiconductor element on a carrier member; and (4) a step of mounting the picked-up semiconductor element on a second substrate;
  • a semiconductor element is disposed on the first substrate via an adhesive layer including at least a laser decomposable adhesive layer.
  • an adhesive layer including at least a laser decomposable adhesive layer is disposed on the first substrate via an adhesive layer including at least a laser decomposable adhesive layer.
  • an adhesive layer 25 including a laser-decomposable adhesive layer is formed on the first substrate 20, followed by a crystal growth substrate.
  • the semiconductor elements 15 arranged on the substrate 10 are transferred onto the adhesive layer 25 formed on the first substrate 20.
  • the surface of the semiconductor element opposite to the surface held by the crystal growth substrate is attached to the adhesive layer on the first substrate, and then the crystal growth substrate is removed.
  • the method for removing the crystal growth substrate is not particularly limited, and examples thereof include a method for peeling and removing the crystal growth substrate from the semiconductor element by a laser lift-off method that irradiates laser light, and a method for removing the crystal growth substrate by a back grinding method.
  • the semiconductor element examples include a light emitting diode (LED), a transistor, and an integrated circuit (IC). Among these, an LED is preferable, and a micro LED is more preferable. In one embodiment, the micro LED has, for example, a width of 0.5 to 200 ⁇ m, a length of 0.5 to 200 ⁇ m, and a height of 0.5 to 200 ⁇ m.
  • the semiconductor element can have connection electrodes such as bumps for connection to a second substrate such as a circuit substrate described later.
  • the semiconductor elements are usually formed in a two-dimensional array (for example, a lattice shape) on the crystal growth substrate.
  • the crystal growth substrate usually has a circular shape or a rectangular shape, and is made of, for example, silicon, gallium arsenide, sapphire, or the like.
  • the semiconductor element can also be formed as follows. For example, a plurality of regions are defined by dividing lines arranged in a lattice pattern on the surface of a disk-shaped wafer that is a workpiece, and a semiconductor element is formed in each of the partitioned regions. After grinding to form a predetermined thickness, the wafer is cut along a division line by a dicing apparatus. In this manner, the regions are divided to form individual semiconductor elements. The formed semiconductor element is transferred onto the adhesive layer formed on the first substrate so that a predetermined surface faces.
  • the first substrate is a substrate holding a semiconductor element.
  • the laser beam is decomposed by irradiating laser light from the first substrate side in step (2) to decompose at least a part of the laser-decomposable adhesive layer.
  • a substrate that transmits light is preferable, and examples thereof include a glass substrate, a quartz substrate, and a transparent resin substrate.
  • the light transmittance at the laser wavelength used in the step (2) in the first substrate is preferably 50% or more, more preferably 70% or more.
  • the light transmittance can usually be measured with a spectrophotometer.
  • the laser-decomposable adhesive layer is not particularly limited as long as it is an adhesive layer that can hold the semiconductor element on the first substrate during the handling operation before laser irradiation and decomposes the contained components by laser irradiation. Examples thereof include the adhesives described in JP-A-2009-155652, JP-A-2012-106486, International Publication No. 2010/147102, JP-A-2018-022763, and JP-A-2017-069541.
  • a resin composition for laser ablation can be used as an adhesive for forming the laser-decomposable adhesive layer.
  • Laser ablation means that when a solid material is irradiated with laser light with an irradiation intensity higher than a threshold value, the solid material that has absorbed the laser light is decomposed, and the substances constituting the solid material are various atoms, molecules, radicals, etc. The solid material is released in the form, and the solid material is decomposed and removed in the laser irradiation portion.
  • the laser decomposable adhesive layer preferably contains a polymer.
  • the polymer include olefin resin, cycloolefin resin, terpene resin, rosin resin, petroleum resin, novolac resin, (meth) acrylic resin, polyvinyl chloride, ethylene-vinyl acetate copolymer, phenoxy resin. , Thermoplastic polyimide resins, and thermoplastic resins such as thermoplastic polybenzoxazole resins; and elastomers such as conjugated diene polymer rubbers.
  • the laser-decomposable adhesive layer preferably contains a light absorber that absorbs laser light.
  • the light absorber for example, absorbs the light and causes alteration such as decomposition of components in the laser-decomposable adhesive layer.
  • Examples of the light absorber include benzotriazole-based light absorbers, hydroxyphenyltriazine-based light absorbers, benzophenone-based light absorbers, salicylic acid-based light absorbers, radiation-sensitive radical polymerization initiators, and light-sensitive acid generators.
  • Organic light absorbers such as: reaction products of phenolic compounds and aldehyde compounds; black pigments such as carbon black, non-black pigments, and dyes.
  • a polymer containing a structure that absorbs laser light in a repeating unit may be used as the light absorber.
  • a polymer having a structure containing a conjugated ⁇ -electron system examples include a polymer having a quinone structure, and a polymer having a structure that forms a quinone structure by heat treatment.
  • the thickness of the laser decomposable adhesive layer is usually 0.01 to 100 ⁇ m, preferably 0.1 to 10 ⁇ m. When the thickness is in the above range, the semiconductor element can be protected from the laser beam while efficiently performing the decomposition by the laser beam.
  • conventional photocurable adhesives usually contain a crosslinking agent such as a (meth) acrylate monomer and a photopolymerization initiator such as a photoradical polymerization initiator.
  • a crosslinking agent such as a (meth) acrylate monomer
  • a photopolymerization initiator such as a photoradical polymerization initiator.
  • the cross-linking / curing of the portion far from the light irradiation side where light does not easily reach hardly proceeds.
  • a laser decomposable adhesive is used to hold the semiconductor element on the first substrate.
  • the adhesive strength is weakened if it is decomposed in any of the adhesive layers, so that it is possible to pick up a semiconductor element satisfactorily.
  • the semiconductor element can be prevented from being damaged by heat because there is almost no heat generated by laser irradiation.
  • the light transmittance at the laser wavelength used in the step (2) in the adhesive layer and / or the laser decomposable adhesive layer used in the present invention is preferably 45% or less, more preferably 40. % Or less, more preferably 35% or less.
  • the adhesive layer for holding the semiconductor element on the first substrate can be composed only of the laser decomposable adhesive layer, or has a laser decomposable adhesive layer and another adhesive layer. Can do.
  • the multilayer structure having two or more layers is, for example, protection of the circuit surface of the semiconductor element, adhesiveness / separation between the semiconductor element and the first substrate, shielding of light used during the laser irradiation process, Moreover, it can have a good balance of functions such as heat resistance during laser irradiation treatment.
  • the adhesive layer has another adhesive layer, adverse effects on the semiconductor element can be suppressed even when heat is generated in the laser-decomposable adhesive layer that has been irradiated with the laser. From the above viewpoint, it is preferable that the laser-decomposable adhesive layer is in contact with the first substrate.
  • adhesive layers can be formed using a known adhesive.
  • the adhesive include thermoplastic resin-based, elastomer-based, and thermosetting resin-based adhesives, and may be a mixed system of two or more selected from these.
  • the adhesive may be any of a solvent type, an emulsion type, and a hot melt type.
  • the thickness of the other adhesive layer is usually 1 to 100 ⁇ m, preferably 5 to 50 ⁇ m.
  • a spin coating method, an ink jet method, or a slit coating method can be used for the formation of the laser-decomposable adhesive layer and other adhesive layers.
  • the layers can be formed by, for example, heating to evaporate the solvent.
  • the laser decomposition type adhesive layer is irradiated with laser light from the first substrate side.
  • the laser beam is not particularly limited as long as the laser-decomposable adhesive can be decomposed.
  • the laser include a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, a fiber laser, and a photoexcited semiconductor laser; a liquid laser such as a dye laser; a CO 2 laser; Examples include gas lasers such as excimer laser, Ar laser, and He—Ne laser.
  • a gas laser or a solid laser is preferable from the viewpoint of suppressing the generation of heat in the adhesive layer during ablation
  • a solid laser beam is preferable from the viewpoint of cost
  • a 2 to 4 times harmonic of a YAG laser is more preferable.
  • the wavelength of the laser light includes a laser having an oscillation wavelength of any wavelength from the ultraviolet region to the infrared region, and among these, a short wavelength, specifically 400 nm or less, more preferably 360 nm or less, and still more preferably.
  • a laser having a wavelength of 310 nm or less from the viewpoint of suppressing the generation of heat in the adhesive layer during ablation.
  • the laser irradiation conditions vary depending on the type of light source and the like, but the output is usually 10 mW to 100 W, and the integrated light quantity is usually 10 to 10,000 mJ / cm 2 .
  • the laser at a location corresponding to the semiconductor element 15 to be picked up (specifically, a location where the semiconductor element 15 is bonded).
  • the laser beam (indicated by an arrow in FIG. 1C) can be selectively irradiated to the decomposable adhesive layer 25.
  • the laser-decomposable adhesive layer it is preferable to irradiate the laser-decomposable adhesive layer while scanning the laser beam from the first substrate side, and it is more preferable to irradiate the laser beam focused on the laser-decomposable adhesive layer.
  • the scanning method is not particularly limited.
  • the laser beam is linear in the X-axis direction, and it corresponds to the semiconductor element scheduled for pickup.
  • the component contained in the laser-decomposable adhesive layer absorbs laser light due to laser irradiation, and its adhesive strength is reduced. Therefore, the semiconductor element can be easily picked up from the first substrate after the laser irradiation on the laser decomposable adhesive layer.
  • step (3) the semiconductor element is picked up from the first substrate by holding the semiconductor element on the carrier member.
  • the carrier member 30 is disposed above the semiconductor element 15 disposed on the first substrate 20, is brought into contact with the semiconductor element 15, and has a pickup collet 35. 30 selectively picks up the semiconductor element 15a.
  • the semiconductor element 15 b that has not been picked up remains on the first substrate 20.
  • the number of semiconductor elements 15a picked up may be one, or a plurality of semiconductor elements 15a at the same time, for example, hundreds to millions. In one embodiment, it is preferable to pick up an array of semiconductor elements.
  • a conventionally known transfer head can be used as the carrier member.
  • a transfer head that picks up a semiconductor element by utilizing electrostatic action, particularly voltage application see Japanese Patent Laid-Open No. 2015-500561), vacuum suction, or the like.
  • a transfer head for picking up a semiconductor element by using a semiconductor device see Japanese Patent Application Laid-Open No. 2018-32740
  • a contact portion to the semiconductor element is made of a viscoelastic elastomer, and kinetically between the semiconductor element and the surface of the viscoelastic elastomer
  • a transfer head (see Japanese Patent Application Publication No. 2017-521859) for picking up a semiconductor element by using adjustable adhesion can be used.
  • a semiconductor element corresponding to the irradiation region in the array of semiconductor elements is selected using a carrier member. Can be picked up.
  • step (3) and step (4) described below a semiconductor element is picked up from the first substrate, and the picked-up semiconductor element is placed on the second substrate.
  • step (4) the picked-up semiconductor element is mounted on the second substrate.
  • the semiconductor element 15a held by the carrier member 30 is brought into contact with the second substrate 40, and then the carrier member 30 is separated from the semiconductor element 15a, and then the second substrate.
  • the semiconductor element 15 a is left on 40.
  • the semiconductor element mounted on the second substrate is also referred to as “semiconductor element 15 c”. In this way, a semiconductor module is manufactured.
  • step (4) a plurality of semiconductor elements picked up by the carrier member are bonded and mounted on the second substrate.
  • the second substrate examples include a circuit substrate having wiring and the like such as a display substrate, an illumination substrate, a substrate having a functional device such as a transistor or an integrated circuit (IC).
  • the second substrate can be a rigid substrate or a flexible substrate, and examples thereof include a rigid resin substrate, a ceramic substrate or a glass substrate, and a flexible resin substrate.
  • the adhesive layer residue remaining on the semiconductor element after laser ablation may be removed by, for example, wet cleaning with a solvent or dry cleaning such as ashing.
  • the second substrate can be entirely heated when the semiconductor element is mounted.
  • the heating method include a method using a hot plate, an infrared heating lamp, a laser, a resistance heating element, and the like.
  • the electrodes such as solder bumps (not shown) provided on the semiconductor element 15c can be joined to the electrodes 45 such as electrode pads formed on the second substrate 40.
  • the electrodes of the semiconductor element 15c and the electrodes 45 of the second substrate 40 can be electrically connected.
  • an underfill material can be used to protect the junction between the semiconductor element and the second substrate after mounting the semiconductor element.
  • a plurality of semiconductor elements 15c can be mounted on each electrode 45 of the second substrate 40 having a plurality of electrodes 45 arranged in an array.
  • a micro LED display comprising the semiconductor module can be obtained.
  • the mounting apparatus of the present invention is a semiconductor element mounting apparatus for transferring a semiconductor element held on a first substrate to a second substrate and mounting the semiconductor element on the second substrate, A holding unit for holding the semiconductor element on the first substrate via an adhesive layer including at least a laser-decomposable adhesive layer; A laser irradiation unit for irradiating the laser decomposition type adhesive layer with laser light from the first substrate side; A carrier member for picking up the semiconductor element from the first substrate by holding the semiconductor element; And a placement portion on which the second substrate is placed.
  • the holding unit holds a structure including a first substrate, an adhesive layer including a laser decomposable adhesive layer, and a semiconductor element.
  • the laser irradiation unit includes the laser described above.
  • the laser irradiation unit is optically applied from the first substrate side to the laser-decomposable adhesive layer in the first substrate, the adhesive layer including the laser-decomposable adhesive layer and the semiconductor element structure held by the holding unit. It is arranged at a position where laser irradiation is possible.
  • Examples of the carrier member include the transfer head described above.
  • the transfer head is configured to be movable by a robot arm, for example, and can pick up a semiconductor element from the first substrate and release the semiconductor element onto the second substrate.
  • the second substrate is placed on the placement portion, and the semiconductor element picked up using the carrier member is mounted on the second substrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un procédé de montage pour des éléments semi-conducteurs comprenant : (1) une étape consistant à agencer des éléments semi-conducteurs sur un premier substrat par l'intermédiaire d'une couche adhésive qui comprend au moins une couche adhésive dégradable au laser ; (2) une étape consistant à émettre une lumière laser au niveau de la couche adhésive dégradable au laser à partir du premier côté du substrat ; (3) une étape de fabrication d'un élément de support maintenant les éléments semi-conducteurs et saisissant ainsi les éléments semi-conducteurs hors du premier substrat ; et (4) une étape de montage des éléments semi-conducteurs saisis sur un second substrat.
PCT/JP2019/005756 2018-04-26 2019-02-18 Procédé de montage et dispositif de montage pour éléments semi-conducteurs WO2019207920A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-084990 2018-04-26
JP2018084990 2018-04-26

Publications (1)

Publication Number Publication Date
WO2019207920A1 true WO2019207920A1 (fr) 2019-10-31

Family

ID=68293510

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/005756 WO2019207920A1 (fr) 2018-04-26 2019-02-18 Procédé de montage et dispositif de montage pour éléments semi-conducteurs

Country Status (2)

Country Link
TW (1) TW201946133A (fr)
WO (1) WO2019207920A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022153878A1 (fr) * 2021-01-13 2022-07-21 リンテック株式会社 Feuille de manipulation de pièce, procédé de fabrication de dispositif à semi-conducteur et utilisation de feuille de manipulation de pièce
WO2022153745A1 (fr) * 2021-01-13 2022-07-21 リンテック株式会社 Feuille de manipulation de pièce et procédé de fabrication de dispositif
WO2022201766A1 (fr) * 2021-03-26 2022-09-29 リンテック株式会社 Feuille de manipulation de pièce et procédé de fabrication de dispositif
WO2022201767A1 (fr) * 2021-03-26 2022-09-29 リンテック株式会社 Feuille de manipulation de pièces et procédé de fabrication de dispositif
WO2022201765A1 (fr) * 2021-03-26 2022-09-29 リンテック株式会社 Feuille de manipulation de pièces et procédé de fabrication de dispositif
WO2022210154A1 (fr) * 2021-04-01 2022-10-06 東レ株式会社 Stratifié et procédé de fabrication de dispositif semi-conducteur
WO2023108449A1 (fr) * 2021-12-15 2023-06-22 厦门市芯颖显示科技有限公司 Dispositif de transfert d'adressage et procédé de transfert d'adressage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314053A (ja) * 2001-04-19 2002-10-25 Sony Corp チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2010251359A (ja) * 2009-04-10 2010-11-04 Sony Corp 素子の移載方法
US20160144608A1 (en) * 2014-11-23 2016-05-26 Mikro Mesa Technology Co., Ltd. Method for transferring device
WO2016158264A1 (fr) * 2015-03-30 2016-10-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif électronique et procédé de production d'un dispositif électronique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314053A (ja) * 2001-04-19 2002-10-25 Sony Corp チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2010251359A (ja) * 2009-04-10 2010-11-04 Sony Corp 素子の移載方法
US20160144608A1 (en) * 2014-11-23 2016-05-26 Mikro Mesa Technology Co., Ltd. Method for transferring device
WO2016158264A1 (fr) * 2015-03-30 2016-10-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif électronique et procédé de production d'un dispositif électronique

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022153878A1 (fr) * 2021-01-13 2022-07-21 リンテック株式会社 Feuille de manipulation de pièce, procédé de fabrication de dispositif à semi-conducteur et utilisation de feuille de manipulation de pièce
WO2022153877A1 (fr) * 2021-01-13 2022-07-21 リンテック株式会社 Feuille de manipulation de pièce, procédé de manipulation de petite pièce, procédé de fabrication de dispositif et utilisation d'une feuille de manipulation de pièce
WO2022153745A1 (fr) * 2021-01-13 2022-07-21 リンテック株式会社 Feuille de manipulation de pièce et procédé de fabrication de dispositif
WO2022201766A1 (fr) * 2021-03-26 2022-09-29 リンテック株式会社 Feuille de manipulation de pièce et procédé de fabrication de dispositif
JPWO2022201766A1 (fr) * 2021-03-26 2022-09-29
WO2022201767A1 (fr) * 2021-03-26 2022-09-29 リンテック株式会社 Feuille de manipulation de pièces et procédé de fabrication de dispositif
WO2022201765A1 (fr) * 2021-03-26 2022-09-29 リンテック株式会社 Feuille de manipulation de pièces et procédé de fabrication de dispositif
JP7146145B1 (ja) * 2021-03-26 2022-10-03 リンテック株式会社 ワークハンドリングシートおよびデバイス製造方法
JP7325634B2 (ja) 2021-03-26 2023-08-14 リンテック株式会社 ワークハンドリングシートおよびデバイス製造方法
WO2022210154A1 (fr) * 2021-04-01 2022-10-06 東レ株式会社 Stratifié et procédé de fabrication de dispositif semi-conducteur
WO2023108449A1 (fr) * 2021-12-15 2023-06-22 厦门市芯颖显示科技有限公司 Dispositif de transfert d'adressage et procédé de transfert d'adressage

Also Published As

Publication number Publication date
TW201946133A (zh) 2019-12-01

Similar Documents

Publication Publication Date Title
WO2019207920A1 (fr) Procédé de montage et dispositif de montage pour éléments semi-conducteurs
JP7130701B2 (ja) 基板上に個別部品を並列に組み立てる方法
KR20200130076A (ko) 디스플레이 장치의 제조 방법, 및 소스 기판 구조체
KR100853410B1 (ko) 소자의 전사방법 및 이를 이용한 소자의 배열방법,화상표시장치의 제조방법
JP5618522B2 (ja) 半導体装置を形成する方法
TWI790353B (zh) 元件的移設方法
TW200411755A (en) Method of processing a semiconductor wafer
JP6904368B2 (ja) 半導体基板の処理方法及び半導体基板の処理装置
JP2021048407A (ja) ウェハの処理方法
TWI549174B (zh) 製造半導體裝置之方法
JP2019514199A (ja) ２枚の基板を接合する方法および装置
KR20180032648A (ko) 지지체 분리 장치 및 지지체 분리 방법
JP6626413B2 (ja) 支持体分離方法、および基板処理方法
TW201824355A (zh) 安裝方法及安裝裝置
JP2003203886A (ja) 素子の分離方法及び素子の転写方法
US11374149B2 (en) Method of manufacturing display device and source substrate structure
JP2004281659A (ja) 保持部材及び半導体装置の製造方法
JP2018093021A (ja) 対象物の処理方法、および半導体装置の製造方法
JP2016146413A (ja) 半導体装置の製造方法
TW202002256A (zh) 半導體元件形成藍寶石基板、半導體元件形成藍寶石基板的製造方法以及半導體元件的轉印方法
JP2007227810A (ja) 表面保護シートおよび表面保護シートを用いた半導体装置の製造方法
JP6670190B2 (ja) 支持体分離装置、および支持体分離方法
TWI744253B (zh) 半導體裝置的製造方法
JP2004281660A (ja) 半導体装置の製造方法及び製造装置
JP7308665B2 (ja) 被加工物の加工方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19792370

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19792370

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP