WO2019205702A1 - Array substrate, and manufacturing method thereof - Google Patents

Array substrate, and manufacturing method thereof Download PDF

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Publication number
WO2019205702A1
WO2019205702A1 PCT/CN2018/124496 CN2018124496W WO2019205702A1 WO 2019205702 A1 WO2019205702 A1 WO 2019205702A1 CN 2018124496 W CN2018124496 W CN 2018124496W WO 2019205702 A1 WO2019205702 A1 WO 2019205702A1
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Prior art keywords
metal
oxide layer
metal oxide
layer
light
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PCT/CN2018/124496
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French (fr)
Chinese (zh)
Inventor
陈黎暄
林旭林
杨流洋
马远洋
陈孝贤
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2019205702A1 publication Critical patent/WO2019205702A1/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a method of fabricating the same.
  • LCD liquid crystal display
  • Cathode cathode ray tube
  • CRT Ray Tube
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is Thin Film Transistor Array Substrate (TFT Array Substrate) and color filter (Color) Filter, CF) is filled with liquid crystal molecules between the substrates, and a driving voltage is applied to the two substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • TFT Array Substrate Thin Film Transistor Array Substrate
  • Color filter Color filter
  • the conventional liquid crystal display panel in order to increase the storage capacitance and the like, a cross structure or intersection of metal wires is often left in the light transmitting region.
  • the polarization direction of the partially polarized light will be deflected, resulting in partial leakage of the polarized light after filtering through the polarizer in the vertical direction.
  • non-horizontal or vertical metal corners or metal edges can affect the polarization of horizontally polarized light, and a diffraction-like phenomenon occurs, while the polarization direction changes partially, causing light leakage under dark images.
  • the metal wire structure is not disposed in the light transmitting region, the high-resolution liquid crystal display panel may have insufficient charging efficiency and insufficient storage capacity.
  • the present invention provides an array substrate comprising: a substrate substrate and a plurality of criss-crossing metal traces disposed on the substrate; the substrate comprising a plurality of arrays a light transmitting region; the metal trace is disposed on a side of the portion of the plurality of light transmitting regions and is provided with a metal oxide layer.
  • the material of the metal trace is copper; the metal oxide layer is copper oxide.
  • the invention also provides a method for fabricating an array substrate, comprising the following steps:
  • Step S1 providing a substrate; forming a first metal layer on the substrate;
  • the substrate substrate includes a plurality of light-transmissive regions arranged in an array
  • Step S2 forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light transmissive regions.
  • the step S2 is specifically: first patterning the first metal layer, forming a plurality of criss-crossing metal traces, and then introducing oxygen or ozone, and oxidizing the metal on the side of the metal traces in the plurality of light-transmitting regions to form a metal Oxide layer.
  • the specific step of the step S2 is: first introducing oxygen, oxidizing a side of the first metal layer in the plurality of transparent regions to form a metal oxide layer, and then patterning the first metal layer to form a plurality of criss-crossing metal walks. a wire and a metal oxide layer on a side of the metal trace in the plurality of light transmissive regions.
  • the step S2 is specifically: first depositing a metal oxide layer on the first metal layer through the metal oxide target, and then patterning the first metal layer and the metal oxide layer to form a plurality of criss-crossing metal walks. a line, and a metal oxide layer on the side of the metal trace in the plurality of light transmissive regions.
  • the step S2 is specifically: first patterning the first metal layer, forming a plurality of criss-crossing metal traces, depositing a metal oxide layer on the metal trace through the metal oxide target, and patterning The metal oxide layer forms a metal oxide layer on a side of the metal trace in the plurality of light transmissive regions
  • the step S2 is specifically: first patterning the first metal layer to form a plurality of criss-crossing metal traces, and then oxidizing the side of the metal traces in the plurality of light-transmitting regions by the oxidant solution to form a plurality of a metal oxide layer on the side of the metal trace in the light transmitting region.
  • the oxidation temperature is below 350°, the oxidation time is less than or equal to 3 minutes, and the gas flow rate is less than 3000 SCCM.
  • the material of the metal trace is copper; the metal oxide layer is copper oxide.
  • the invention also provides a method for fabricating an array substrate, which comprises the following steps:
  • Step S1 providing a substrate; forming a first metal layer on the substrate;
  • the substrate substrate includes a plurality of light-transmissive regions arranged in an array
  • Step S2 forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light-transmitting regions;
  • the specific step of the step S2 includes the following one:
  • the invention also provides a method for fabricating an array substrate, which comprises the following steps:
  • Step S1 providing a substrate; forming a first metal layer on the substrate;
  • the substrate substrate includes a plurality of light-transmissive regions arranged in an array
  • Step S2 forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light-transmitting regions;
  • the specific step of the step S2 includes the following one:
  • the array substrate of the present invention comprises a base substrate and a plurality of criss-crossing metal traces disposed on the base substrate; the base substrate has a plurality of light transmissive regions;
  • the metal oxide layer is disposed on the side of the portion of the plurality of light-transmissive regions, and the metal oxide layer is beneficial for greatly improving the depolarization phenomenon of the metal trace edge and the bending position of the light-transmitting region, reducing light leakage in the light-transmitting region, and improving liquid crystal.
  • the contrast of the display panel is beneficial for greatly improving the depolarization phenomenon of the metal trace edge and the bending position of the light-transmitting region, reducing light leakage in the light-transmitting region, and improving liquid crystal.
  • the method for fabricating an array substrate of the present invention comprises forming a plurality of criss-crossing metal traces in a first metal layer on a base substrate, and a metal oxide layer on a side of the metal traces in the plurality of light-transmitting regions, the metal The oxide layer is beneficial for greatly improving the depolarization phenomenon of the edge and the bending position of the metal trace in the light-transmitting region, reducing the light leakage in the light-transmitting region, and improving the contrast of the liquid crystal display panel.
  • 1 is a plan view of an array substrate of the present invention
  • FIG. 3 is a simulation diagram of a time domain finite difference method of an array substrate of the present invention.
  • FIG. 4 is a flow chart of a method of fabricating an array substrate of the present invention.
  • the array substrate of the present invention includes: a substrate substrate 10 and a plurality of criss-crossing metal traces 20 disposed on the substrate substrate 10; the substrate substrate 10 includes a plurality of arrays The light-transmissive regions 11 are arranged; the metal traces 20 are disposed on the sides of the portions of the plurality of light-transmissive regions 11 .
  • the plurality of criss-crossing metal traces 20 on the base substrate 10 have a plurality of intersections.
  • the intersections of the plurality of metal traces 20 are vertical structures, but a plurality of metals are produced in actual production.
  • the intersection of the plurality of metal traces 20 is necessarily an arc structure, and the intersection of the curved structures affects the polarization direction of the incident polarized light of the liquid crystal display panel, resulting in light leakage of the liquid crystal display panel, and thus the present invention
  • a metal oxide layer 21 is disposed on a side of a portion of the metal traces 20 located in the plurality of light-transmissive regions 11, which is advantageous for greatly improving the depolarization of the edges and bending positions of the metal traces 20 of the light-transmitting region 11, and reducing the light-transmitting region. 11 light leakage, improve the contrast of the liquid crystal display panel. As shown in FIG.
  • the present invention simulates the ability of the metal oxide layer 21 to be deflected by a Finite-Difference Time-Domain (FDTD) method, and places the metal trace 20 having only one metal oxide layer 21 on one side.
  • FDTD Finite-Difference Time-Domain
  • the metal trace 20 is placed in the XY plane and placed at an oblique angle.
  • the surface light source along the Z direction is irradiated on the metal trace 20, and the electric field of the light source is along the y direction, and an electric field is formed near the edge of the metal trace 20.
  • the scattered light along the x direction can be observed that the metal trace 20 has a light leakage side on the side of the metal oxide layer 21 that is smaller than the light leakage side of the metal trace 20 on the side of the metal oxide layer 21, indicating that the present invention is on the metal trace 20.
  • the metal oxide layer 21 is disposed on the side surface to reduce the light leakage phenomenon at the curved position of the metal trace 20.
  • the upper surface of the metal trace 20 is not excessively oxidized, which is advantageous for preventing poor conduction of the metal trace 20.
  • the angle between the polarization direction of the incident light of the array substrate and the metal trace 20 is 30° to 60°, preferably 45°, and the degree of light leakage of the metal trace 20 can be greatly reduced.
  • the array substrate further includes a first metal layer M1 disposed on the base substrate 10, and a second metal layer M2 disposed on the first metal layer M1 and insulated from the first metal layer M1; the metal The trace 20 is located in the first metal layer M1, and the first metal layer M1 further includes a plurality of gate lines 22 extending in the horizontal direction spaced apart from the metal traces 20, and a gate connected to the gate lines 22.
  • the second metal layer M2 includes a plurality of data lines 30 extending in a vertical direction, a source 31 connected to the data line 30, and a drain 32 spaced apart from the source 31; the plurality of gate lines 22 and a plurality of data lines 30 enclose a plurality of light transmissive regions 11; the gate electrodes 23, the source electrodes 31 and the drain electrodes 32 constitute a thin film transistor T.
  • the array substrate further includes a pixel electrode 12 disposed on the second metal layer M2 and located in the transparent region 11; the pixel electrode 12 is connected to the drain 32 of the thin film transistor T via a via VH.
  • the material of the pixel electrode 12 is indium tin oxide (ITO).
  • the material of the metal trace 20 is copper; and the metal oxide layer 21 is copper oxide.
  • the pixel electrode 12 includes: a trunk 121 having a cross shape, a plurality of pixel electrode branches 122 extending from the trunk 121 in different directions, and an end connecting all the pixel electrode branches 122 (with the pixel electrode branch 122 away from the trunk) One end of 121 is the end) and the closed frame 123 of the trunk 121.
  • the metal trace 20 includes a horizontal portion 201 parallel to the gate line 22, and a first vertical portion 202 perpendicularly intersecting the horizontal portion 201; the horizontal portion 201 and the first vertical portion
  • the portion 202 is disposed corresponding to the trunk 121 of the pixel electrode 12 such that the metal trace 20 and the pixel electrode 12 form a storage capacitor structure. Since the overlapping area of the metal trace 20 and the pixel electrode 12 is large, the capacitance of the storage capacitor is also large. The charging efficiency of the array substrate can be improved.
  • the metal trace 20 further includes a second vertical portion 203 disposed between the pixel electrode 12 and the data line 30 and perpendicularly intersecting the horizontal portion 201.
  • the present invention further provides a method for fabricating an array substrate, comprising the following steps:
  • Step S1 providing a substrate 10; forming a first metal layer M1 on the substrate 10;
  • the base substrate 10 includes a plurality of arrays of light transmissive regions 11;
  • Step S2 forming a plurality of criss-crossing metal traces 20 in the first metal layer M1, and forming a metal oxide layer 21 on the side of the metal traces 20 in the plurality of light-transmitting regions 11.
  • the step S2 is specifically: first patterning the first metal layer M1, forming a plurality of criss-crossing metal traces 20, and then introducing oxygen or ozone to oxidize the metal in the plurality of transparent regions 11 A metal oxide layer 21 is formed on the side of the trace 20.
  • the step S2 is specifically: first introducing oxygen, oxidizing the side of the first metal layer M1 in the plurality of transparent regions 11 to form a metal oxide layer 21, and then patterning the first metal layer M1 to form A plurality of criss-crossing metal traces 20 and a metal oxide layer 21 located on a side of the plurality of light-transmissive regions 11 in the metal traces 20.
  • the oxidation temperature is less than 350°
  • the oxidation time is no more than 3 minutes
  • the gas flow rate is less than 3000 SCCM (standard milliliters per minute).
  • the step S2 is specifically: first depositing a metal oxide layer 21 on the first metal layer M1 through a metal oxide target, and then patterning the first metal layer M1 and the metal oxide layer 21 to form A plurality of criss-crossing metal traces 20 and a metal oxide layer 21 located on the side of the metal traces 20 in the plurality of light transmissive regions 11.
  • the metal oxide layer 21 has a thickness of less than or equal to 150 nm.
  • the step S2 is specifically: first patterning the first metal layer M1, forming a plurality of criss-crossing metal traces 20, and depositing a layer on the metal traces 20 through the metal oxide target.
  • the metal oxide layer 21 is patterned to form the metal oxide layer 21 on the side of the metal traces 20 in the plurality of light transmissive regions 11.
  • the step S2 is specifically: first patterning the first metal layer M1, forming a plurality of criss-crossing metal traces 20, and oxidizing the metal traces 20 in the plurality of transparent regions 11 by the oxidant solution.
  • the side surface forms a metal oxide layer 21 located on the side of the metal trace 20 in the plurality of light-transmissive regions 11; in order to oxidize only the side surface of the metal trace 20 without causing the metal trace 20 to peel off, the oxidant solution needs to be diluted. And control the oxidation time.
  • the oxidant solution is hydrogen peroxide.
  • the material of the metal trace 20 is copper; and the metal oxide layer 21 is copper oxide.
  • the array substrate of the present invention includes a base substrate and a plurality of criss-crossing metal traces disposed on the base substrate; the base substrate has a plurality of light transmissive regions; the metal traces A metal oxide layer is disposed on a side surface of a portion of the plurality of light-transmitting regions, and the metal oxide layer is beneficial for greatly improving the depolarization phenomenon of the metal trace edge and the bending position of the light-transmitting region, reducing light leakage in the light-transmitting region, and improving liquid crystal display.
  • the contrast of the panel is beneficial for greatly improving the depolarization phenomenon of the metal trace edge and the bending position of the light-transmitting region, reducing light leakage in the light-transmitting region, and improving liquid crystal display.
  • the method for fabricating an array substrate of the present invention comprises forming a plurality of criss-crossing metal traces in a first metal layer on a base substrate, and a metal oxide layer on a side of the metal traces in the plurality of light-transmitting regions, the metal The oxide layer is beneficial for greatly improving the depolarization phenomenon of the edge and the bending position of the metal trace in the light-transmitting region, reducing the light leakage in the light-transmitting region, and improving the contrast of the liquid crystal display panel.

Abstract

An array substrate and a manufacturing method thereof. The array substrate comprises a base substrate (10) and multiple criss-crossed metal traces (20) provided on the base substrate (10). The base substrate (10) has multiple transparent regions (11). A portion of the metal traces (20) that are located within the multiple transparent regions (11) are each provided with a metal oxide layer (21) on side surfaces thereof. The metal oxide layer (21) improves depolarization at edges and bent locations of the metal traces (20) in the transparent regions (11), thereby reducing light leakage of the transparent regions, and enhancing the contrast of liquid crystal display panels.

Description

阵列基板及其制作方法Array substrate and manufacturing method thereof 技术领域Technical field
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制作方法。The present invention relates to the field of display technologies, and in particular, to an array substrate and a method of fabricating the same.
背景技术Background technique
随着显示技术的发展,液晶显示器(Liquid Crystal Display,LCD)因具有高画质、省电、机身薄及应用范围广等优点,已经逐步取代阴极射线管(Cathode Ray Tube,CRT)显示屏,被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品,成为显示装置中的主流。With the development of display technology, liquid crystal display (LCD) has gradually replaced cathode ray tube (Cathode) due to its high image quality, power saving, thin body and wide application range. Ray Tube (CRT) display screens are widely used in mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers and other consumer electronic products, becoming the mainstream in display devices.
现有市场上的液晶显示器大部分为背光型液晶显示器,其包括液晶显示面板及背光模组(Backlight Module)。液晶显示面板的工作原理是在薄膜晶体管阵列基板(Thin Film Transistor Array Substrate,TFT Array Substrate)与彩色滤光片(Color Filter,CF)基板之间灌入液晶分子,并在两片基板上施加驱动电压来控制液晶分子的旋转方向,以将背光模组的光线折射出来产生画面。Most of the liquid crystal displays on the market are backlight type liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is Thin Film Transistor Array Substrate (TFT Array Substrate) and color filter (Color) Filter, CF) is filled with liquid crystal molecules between the substrates, and a driving voltage is applied to the two substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
现有的液晶显示面板中,为了提高存储电容等目的,在透光区往往留有金属线的十字结构或交叉点。当偏振光在经过金属的十字结构或交叉点后,部分偏振光的偏振方向会发生一定的偏转,从而导致偏振光在经过垂直方向偏振片滤光后产生部分漏光。对于入射的水平偏振光,非水平或垂直方向的金属拐角或金属边缘会对水平偏振光的偏振产生影响,发生一种类似衍射的现象,同时偏振方向发生部分改变,导致暗画面下发生漏光。然而如果不在透光区设置金属线结构,会导致高分辨率的液晶显示面板充电效率不足,储存电容不足等问题。In the conventional liquid crystal display panel, in order to increase the storage capacitance and the like, a cross structure or intersection of metal wires is often left in the light transmitting region. When the polarized light passes through the cross structure or intersection of the metal, the polarization direction of the partially polarized light will be deflected, resulting in partial leakage of the polarized light after filtering through the polarizer in the vertical direction. For incident horizontally polarized light, non-horizontal or vertical metal corners or metal edges can affect the polarization of horizontally polarized light, and a diffraction-like phenomenon occurs, while the polarization direction changes partially, causing light leakage under dark images. However, if the metal wire structure is not disposed in the light transmitting region, the high-resolution liquid crystal display panel may have insufficient charging efficiency and insufficient storage capacity.
技术问题technical problem
本发明的目的在于提供一种阵列基板,透光区的金属走线边缘及弯曲位置的消偏现象大幅改善,透光区漏光减少。It is an object of the present invention to provide an array substrate in which the depolarization phenomenon of the metal trace edge and the curved position of the light transmitting region is greatly improved, and the light leakage in the light transmitting region is reduced.
本发明的目的在于还提供一种阵列基板的制作方法,能够大幅改善透光区的金属走线边缘及弯曲位置的消偏现象,减少透光区漏光。It is an object of the present invention to provide a method for fabricating an array substrate, which can greatly improve the depolarization phenomenon of the metal trace edge and the curved position in the light-transmitting region, and reduce light leakage in the light-transmitting region.
技术解决方案Technical solution
为实现上述目的,本发明提供了一种阵列基板,包括:衬底基板以及设于所述衬底基板上的多条纵横交错的金属走线;所述衬底基板包括多个阵列排布的透光区;所述金属走线位于多个透光区的部分的侧面均设有金属氧化层。To achieve the above object, the present invention provides an array substrate comprising: a substrate substrate and a plurality of criss-crossing metal traces disposed on the substrate; the substrate comprising a plurality of arrays a light transmitting region; the metal trace is disposed on a side of the portion of the plurality of light transmitting regions and is provided with a metal oxide layer.
所述金属走线的材料为铜;所述金属氧化层为氧化铜。The material of the metal trace is copper; the metal oxide layer is copper oxide.
本发明还提供一种阵列基板的制作方法,包括如下步骤:The invention also provides a method for fabricating an array substrate, comprising the following steps:
步骤S1、提供衬底基板;在所述衬底基板上形成第一金属层;Step S1, providing a substrate; forming a first metal layer on the substrate;
所述衬底基板包括多个阵列排布的透光区;The substrate substrate includes a plurality of light-transmissive regions arranged in an array;
步骤S2、在所述第一金属层中形成多条纵横交错的金属走线,并在位于多个透光区中金属走线的侧面形成金属氧化层。Step S2, forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light transmissive regions.
所述步骤S2具体步骤为:先图案化所述第一金属层,形成多条纵横交错的金属走线,再通入氧气或臭氧,氧化位于多个透光区中金属走线的侧面形成金属氧化层。The step S2 is specifically: first patterning the first metal layer, forming a plurality of criss-crossing metal traces, and then introducing oxygen or ozone, and oxidizing the metal on the side of the metal traces in the plurality of light-transmitting regions to form a metal Oxide layer.
所述步骤S2具体步骤为:先通入氧气,氧化位于多个透光区中第一金属层的侧面形成金属氧化层,再图案化所述第一金属层,形成多条纵横交错的金属走线及位于多个透光区中金属走线的侧面的金属氧化层。The specific step of the step S2 is: first introducing oxygen, oxidizing a side of the first metal layer in the plurality of transparent regions to form a metal oxide layer, and then patterning the first metal layer to form a plurality of criss-crossing metal walks. a wire and a metal oxide layer on a side of the metal trace in the plurality of light transmissive regions.
所述步骤S2具体步骤为:先通过金属氧化物靶材在所述第一金属层上沉积一层金属氧化层,再图案化第一金属层及金属氧化层,形成多条纵横交错的金属走线,以及位于多个透光区中金属走线侧面的金属氧化层。The step S2 is specifically: first depositing a metal oxide layer on the first metal layer through the metal oxide target, and then patterning the first metal layer and the metal oxide layer to form a plurality of criss-crossing metal walks. a line, and a metal oxide layer on the side of the metal trace in the plurality of light transmissive regions.
所述步骤S2具体步骤为:先图案化所述第一金属层,形成多条纵横交错的金属走线,通过金属氧化物靶材在所述金属走线上沉积一层金属氧化层,图案化所述金属氧化层,形成位于多个透光区中金属走线侧面的金属氧化层The step S2 is specifically: first patterning the first metal layer, forming a plurality of criss-crossing metal traces, depositing a metal oxide layer on the metal trace through the metal oxide target, and patterning The metal oxide layer forms a metal oxide layer on a side of the metal trace in the plurality of light transmissive regions
所述步骤S2具体步骤为:先图案化所述第一金属层,形成多条纵横交错的金属走线,再通过氧化剂溶液氧化位于多个透光区中金属走线的侧面,形成位于多个透光区中金属走线侧面的金属氧化层。The step S2 is specifically: first patterning the first metal layer to form a plurality of criss-crossing metal traces, and then oxidizing the side of the metal traces in the plurality of light-transmitting regions by the oxidant solution to form a plurality of a metal oxide layer on the side of the metal trace in the light transmitting region.
氧化温度低于350°,氧化时间小于或等于3分钟,气体流量小于3000SCCM。The oxidation temperature is below 350°, the oxidation time is less than or equal to 3 minutes, and the gas flow rate is less than 3000 SCCM.
所述金属走线的材料为铜;所述金属氧化层为氧化铜。The material of the metal trace is copper; the metal oxide layer is copper oxide.
本发明还提供一种阵列基板的制作方法,其特征在于,包括如下步骤:The invention also provides a method for fabricating an array substrate, which comprises the following steps:
步骤S1、提供衬底基板;在所述衬底基板上形成第一金属层;Step S1, providing a substrate; forming a first metal layer on the substrate;
所述衬底基板包括多个阵列排布的透光区;The substrate substrate includes a plurality of light-transmissive regions arranged in an array;
步骤S2、在所述第一金属层中形成多条纵横交错的金属走线,并在位于多个透光区中金属走线的侧面形成金属氧化层;Step S2, forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light-transmitting regions;
其中,所述步骤S2具体步骤包括下列一者:The specific step of the step S2 includes the following one:
先图案化所述第一金属层,形成多条纵横交错的金属走线,再通入氧气或臭氧,氧化位于多个透光区中金属走线的侧面形成金属氧化层;以及First patterning the first metal layer to form a plurality of criss-crossing metal traces, and then introducing oxygen or ozone to oxidize a side of the metal traces in the plurality of light-transmitting regions to form a metal oxide layer;
先通入氧气,氧化位于多个透光区中第一金属层的侧面形成金属氧化层,再图案化所述第一金属层,形成多条纵横交错的金属走线及位于多个透光区中金属走线的侧面的金属氧化层。First introducing oxygen gas, oxidizing a side of the first metal layer in the plurality of light-transmissive regions to form a metal oxide layer, and then patterning the first metal layer to form a plurality of criss-crossing metal traces and located in the plurality of light-transmitting regions A metal oxide layer on the side of the metal trace.
本发明还提供一种阵列基板的制作方法,其特征在于,包括如下步骤:The invention also provides a method for fabricating an array substrate, which comprises the following steps:
步骤S1、提供衬底基板;在所述衬底基板上形成第一金属层;Step S1, providing a substrate; forming a first metal layer on the substrate;
所述衬底基板包括多个阵列排布的透光区;The substrate substrate includes a plurality of light-transmissive regions arranged in an array;
步骤S2、在所述第一金属层中形成多条纵横交错的金属走线,并在位于多个透光区中金属走线的侧面形成金属氧化层;Step S2, forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light-transmitting regions;
其中,所述步骤S2具体步骤包括下列一者:The specific step of the step S2 includes the following one:
先通过金属氧化物靶材在所述第一金属层上沉积一层金属氧化层,再图案化第一金属层及金属氧化层,形成多条纵横交错的金属走线,以及位于多个透光区中金属走线侧面的金属氧化层;以及First depositing a metal oxide layer on the first metal layer through the metal oxide target, and then patterning the first metal layer and the metal oxide layer to form a plurality of criss-crossing metal traces, and being located in the plurality of light transmissive layers a metal oxide layer on the side of the metal trace in the region;
先图案化所述第一金属层,形成多条纵横交错的金属走线,通过金属氧化物靶材在所述金属走线上沉积一层金属氧化层,图案化所述金属氧化层,形成位于多个透光区中金属走线侧面的金属氧化层。First patterning the first metal layer to form a plurality of criss-crossing metal traces, depositing a metal oxide layer on the metal trace through the metal oxide target, patterning the metal oxide layer to form a a metal oxide layer on the side of the metal trace in the plurality of light transmissive regions.
有益效果Beneficial effect
本发明的有益效果:本发明的阵列基板包括衬底基板以及设于所述衬底基板上的多条纵横交错的金属走线;所述衬底基板具有多个透光区;所述金属走线位于多个透光区的部分的侧面均设有金属氧化层,该金属氧化层有利于大幅改善透光区的金属走线边缘及弯曲位置的消偏现象,减少透光区漏光,提高液晶显示面板的对比度。本发明的阵列基板的制作方法,通过在衬底基板上的第一金属层中形成多条纵横交错的金属走线,以及位于多个透光区中金属走线侧面的金属氧化层,该金属氧化层有利于大幅改善透光区的金属走线边缘及弯曲位置的消偏现象,减少透光区漏光,提高液晶显示面板的对比度。Advantageous Effects of the Invention: The array substrate of the present invention comprises a base substrate and a plurality of criss-crossing metal traces disposed on the base substrate; the base substrate has a plurality of light transmissive regions; The metal oxide layer is disposed on the side of the portion of the plurality of light-transmissive regions, and the metal oxide layer is beneficial for greatly improving the depolarization phenomenon of the metal trace edge and the bending position of the light-transmitting region, reducing light leakage in the light-transmitting region, and improving liquid crystal. The contrast of the display panel. The method for fabricating an array substrate of the present invention comprises forming a plurality of criss-crossing metal traces in a first metal layer on a base substrate, and a metal oxide layer on a side of the metal traces in the plurality of light-transmitting regions, the metal The oxide layer is beneficial for greatly improving the depolarization phenomenon of the edge and the bending position of the metal trace in the light-transmitting region, reducing the light leakage in the light-transmitting region, and improving the contrast of the liquid crystal display panel.
附图说明DRAWINGS
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。The detailed description of the present invention and the accompanying drawings are to be understood,
附图中,In the drawings,
图1为本发明的阵列基板的俯视图;1 is a plan view of an array substrate of the present invention;
图2为本发明的阵列基板的金属走线的放大图2 is an enlarged view of a metal trace of the array substrate of the present invention;
图3为本发明的阵列基板的时域有限差分法模拟图;3 is a simulation diagram of a time domain finite difference method of an array substrate of the present invention;
图4为本发明的阵列基板的制作方法的流程图。4 is a flow chart of a method of fabricating an array substrate of the present invention.
本发明的实施方式Embodiments of the invention
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。In order to further clarify the technical means and effects of the present invention, the following detailed description will be made in conjunction with the preferred embodiments of the invention and the accompanying drawings.
请参阅图1及图2,本发明的阵列基板包括:衬底基板10以及设于所述衬底基板10上的多条纵横交错的金属走线20;所述衬底基板10包括多个阵列排布的透光区11;所述金属走线20位于多个透光区11的部分的侧面均设有金属氧化层21。Referring to FIG. 1 and FIG. 2, the array substrate of the present invention includes: a substrate substrate 10 and a plurality of criss-crossing metal traces 20 disposed on the substrate substrate 10; the substrate substrate 10 includes a plurality of arrays The light-transmissive regions 11 are arranged; the metal traces 20 are disposed on the sides of the portions of the plurality of light-transmissive regions 11 .
需要说明的是,衬底基板10上的多条纵横交错的金属走线20具有多个交点,在设计理论中多条金属走线20的交点为垂直结构,但实际生产中制作出多条金属走线20时,多条金属走线20的交点必然是弧形结构,该弧形结构的交点会对液晶显示面板的入射偏振光的偏振方向产生影响,导致液晶显示面板发生漏光,因此本发明在位于多个透光区11的部分金属走线20的侧面均设有金属氧化层21,有利于大幅改善透光区11的金属走线20边缘及弯曲位置的消偏现象,减少透光区11漏光,提高液晶显示面板的对比度。如图3所示,本发明通过时域有限差分法(Finite-Difference Time-Domain,FDTD)模拟得到金属氧化层21削偏的能力,将只有一侧具有金属氧化层21的金属走线20放置在立体坐标系中,使得金属走线20位于XY平面并倾斜一定角度放置,通过沿Z方向的面光源照射在该金属走线20上,光源电场沿y方向,金属走线20边缘附近有电场沿x方向的散射光,可以观察到金属走线20具有金属氧化层21一侧的漏光程度小于金属走线20不具有金属氧化层21一侧的漏光程度,表明本发明在金属走线20的侧面设有金属氧化层21可以减少金属走线20弯曲位置的漏光现象。并且由于金属氧化层21设于金属走线20的侧面,使得金属走线20的上表面不会被过分氧化,有利于防止金属走线20的导通不良。It should be noted that the plurality of criss-crossing metal traces 20 on the base substrate 10 have a plurality of intersections. In the design theory, the intersections of the plurality of metal traces 20 are vertical structures, but a plurality of metals are produced in actual production. When the trace 20 is traced, the intersection of the plurality of metal traces 20 is necessarily an arc structure, and the intersection of the curved structures affects the polarization direction of the incident polarized light of the liquid crystal display panel, resulting in light leakage of the liquid crystal display panel, and thus the present invention A metal oxide layer 21 is disposed on a side of a portion of the metal traces 20 located in the plurality of light-transmissive regions 11, which is advantageous for greatly improving the depolarization of the edges and bending positions of the metal traces 20 of the light-transmitting region 11, and reducing the light-transmitting region. 11 light leakage, improve the contrast of the liquid crystal display panel. As shown in FIG. 3, the present invention simulates the ability of the metal oxide layer 21 to be deflected by a Finite-Difference Time-Domain (FDTD) method, and places the metal trace 20 having only one metal oxide layer 21 on one side. In the three-dimensional coordinate system, the metal trace 20 is placed in the XY plane and placed at an oblique angle. The surface light source along the Z direction is irradiated on the metal trace 20, and the electric field of the light source is along the y direction, and an electric field is formed near the edge of the metal trace 20. The scattered light along the x direction can be observed that the metal trace 20 has a light leakage side on the side of the metal oxide layer 21 that is smaller than the light leakage side of the metal trace 20 on the side of the metal oxide layer 21, indicating that the present invention is on the metal trace 20. The metal oxide layer 21 is disposed on the side surface to reduce the light leakage phenomenon at the curved position of the metal trace 20. Moreover, since the metal oxide layer 21 is disposed on the side of the metal trace 20, the upper surface of the metal trace 20 is not excessively oxidized, which is advantageous for preventing poor conduction of the metal trace 20.
进一步地,阵列基板的入射光偏振方向与金属走线20的夹角为30°~60°,优选为45°,可大幅减弱金属走线20的漏光程度。Further, the angle between the polarization direction of the incident light of the array substrate and the metal trace 20 is 30° to 60°, preferably 45°, and the degree of light leakage of the metal trace 20 can be greatly reduced.
具体地,所述阵列基板还包括设于衬底基板10上的第一金属层M1,以及设于第一金属层M1上并与第一金属层M1绝缘的第二金属层M2;所述金属走线20位于第一金属层M1中,所述第一金属层M1还包括与金属走线20间隔设置的沿水平方向延伸的多条栅极线22,以及与栅极线22连接的栅极23;所述第二金属层M2包括沿竖直方向延伸的多条数据线30、与数据线30连接的源极31以及与源极31间隔设置的漏极32;所述多条栅极线22与多条数据线30围成多个透光区11;所述栅极23、源极31和漏极32构成薄膜晶体管T。Specifically, the array substrate further includes a first metal layer M1 disposed on the base substrate 10, and a second metal layer M2 disposed on the first metal layer M1 and insulated from the first metal layer M1; the metal The trace 20 is located in the first metal layer M1, and the first metal layer M1 further includes a plurality of gate lines 22 extending in the horizontal direction spaced apart from the metal traces 20, and a gate connected to the gate lines 22. The second metal layer M2 includes a plurality of data lines 30 extending in a vertical direction, a source 31 connected to the data line 30, and a drain 32 spaced apart from the source 31; the plurality of gate lines 22 and a plurality of data lines 30 enclose a plurality of light transmissive regions 11; the gate electrodes 23, the source electrodes 31 and the drain electrodes 32 constitute a thin film transistor T.
具体地,所述阵列基板还包括设于第二金属层M2上并位于透光区11的像素电极12;所述像素电极12经由一过孔VH连接薄膜晶体管T的漏极32。Specifically, the array substrate further includes a pixel electrode 12 disposed on the second metal layer M2 and located in the transparent region 11; the pixel electrode 12 is connected to the drain 32 of the thin film transistor T via a via VH.
具体地,所述像素电极12的材料为氧化铟锡(ITO)。Specifically, the material of the pixel electrode 12 is indium tin oxide (ITO).
具体地,所述金属走线20的材料为铜;所述金属氧化层21为氧化铜。Specifically, the material of the metal trace 20 is copper; and the metal oxide layer 21 is copper oxide.
具体地,所述像素电极12包括:呈十字形的主干121、自所述主干121沿不同方向延伸的多个像素电极分支122以及连接所有像素电极分支122的末端(以像素电极分支122远离主干121的一端为末端)和主干121的封闭框123。Specifically, the pixel electrode 12 includes: a trunk 121 having a cross shape, a plurality of pixel electrode branches 122 extending from the trunk 121 in different directions, and an end connecting all the pixel electrode branches 122 (with the pixel electrode branch 122 away from the trunk) One end of 121 is the end) and the closed frame 123 of the trunk 121.
具体地,所述金属走线20包括与所述栅极线22平行的水平部201、以及与所述水平部201垂直相交的第一竖直部202;所述水平部201与第一竖直部202对应像素电极12的主干121设置,使得金属走线20与像素电极12构成存储电容结构,由于金属走线20与像素电极12的重叠面积较大,该存储电容的电容值也较大,可提高阵列基板的充电效率。Specifically, the metal trace 20 includes a horizontal portion 201 parallel to the gate line 22, and a first vertical portion 202 perpendicularly intersecting the horizontal portion 201; the horizontal portion 201 and the first vertical portion The portion 202 is disposed corresponding to the trunk 121 of the pixel electrode 12 such that the metal trace 20 and the pixel electrode 12 form a storage capacitor structure. Since the overlapping area of the metal trace 20 and the pixel electrode 12 is large, the capacitance of the storage capacitor is also large. The charging efficiency of the array substrate can be improved.
具体地,所述金属走线20还包括设于像素电极12与数据线30之间并与所述水平部201垂直相交的第二竖直部203。Specifically, the metal trace 20 further includes a second vertical portion 203 disposed between the pixel electrode 12 and the data line 30 and perpendicularly intersecting the horizontal portion 201.
请参阅图4,基于上述的阵列基板,本发明还提供一种阵列基板的制作方法,包括如下步骤:Referring to FIG. 4, based on the above array substrate, the present invention further provides a method for fabricating an array substrate, comprising the following steps:
步骤S1、提供衬底基板10;在所述衬底基板10上形成第一金属层M1;Step S1, providing a substrate 10; forming a first metal layer M1 on the substrate 10;
所述衬底基板10包括多个阵列排布的透光区11;The base substrate 10 includes a plurality of arrays of light transmissive regions 11;
步骤S2、在所述第一金属层M1中形成多条纵横交错的金属走线20,并在位于多个透光区11中金属走线20的侧面形成金属氧化层21。Step S2, forming a plurality of criss-crossing metal traces 20 in the first metal layer M1, and forming a metal oxide layer 21 on the side of the metal traces 20 in the plurality of light-transmitting regions 11.
具体地,所述步骤S2具体步骤为:先图案化所述第一金属层M1,形成多条纵横交错的金属走线20,再通入氧气或臭氧,氧化位于多个透光区11中金属走线20的侧面形成金属氧化层21。Specifically, the step S2 is specifically: first patterning the first metal layer M1, forming a plurality of criss-crossing metal traces 20, and then introducing oxygen or ozone to oxidize the metal in the plurality of transparent regions 11 A metal oxide layer 21 is formed on the side of the trace 20.
具体地,所述步骤S2具体步骤为:先通入氧气,氧化位于多个透光区11中第一金属层M1的侧面形成金属氧化层21,再图案化所述第一金属层M1,形成多条纵横交错的金属走线20及位于多个透光区11中金属走线20的侧面的金属氧化层21。Specifically, the step S2 is specifically: first introducing oxygen, oxidizing the side of the first metal layer M1 in the plurality of transparent regions 11 to form a metal oxide layer 21, and then patterning the first metal layer M1 to form A plurality of criss-crossing metal traces 20 and a metal oxide layer 21 located on a side of the plurality of light-transmissive regions 11 in the metal traces 20.
具体地,氧化温度低于350°,氧化时间不超过3分钟,气体流量小于3000SCCM(标准毫升每分钟)。Specifically, the oxidation temperature is less than 350°, the oxidation time is no more than 3 minutes, and the gas flow rate is less than 3000 SCCM (standard milliliters per minute).
具体地,所述步骤S2具体步骤为:先通过金属氧化物靶材在所述第一金属层M1上沉积一层金属氧化层21,再图案化第一金属层M1及金属氧化层21,形成多条纵横交错的金属走线20,以及位于多个透光区11中金属走线20侧面的金属氧化层21。Specifically, the step S2 is specifically: first depositing a metal oxide layer 21 on the first metal layer M1 through a metal oxide target, and then patterning the first metal layer M1 and the metal oxide layer 21 to form A plurality of criss-crossing metal traces 20 and a metal oxide layer 21 located on the side of the metal traces 20 in the plurality of light transmissive regions 11.
具体地,所述金属氧化层21的厚度小于或等于150nm。Specifically, the metal oxide layer 21 has a thickness of less than or equal to 150 nm.
具体地,所述步骤S2具体步骤为:先图案化所述第一金属层M1,形成多条纵横交错的金属走线20,通过金属氧化物靶材在所述金属走线20上沉积一层金属氧化层21,图案化所述金属氧化层21,形成位于多个透光区11中金属走线20侧面的金属氧化层21。Specifically, the step S2 is specifically: first patterning the first metal layer M1, forming a plurality of criss-crossing metal traces 20, and depositing a layer on the metal traces 20 through the metal oxide target. The metal oxide layer 21 is patterned to form the metal oxide layer 21 on the side of the metal traces 20 in the plurality of light transmissive regions 11.
具体地,所述步骤S2具体步骤为:先图案化所述第一金属层M1,形成多条纵横交错的金属走线20,再通过氧化剂溶液氧化位于多个透光区11中金属走线20的侧面,形成位于多个透光区11中金属走线20侧面的金属氧化层21;为了仅对金属走线20的侧面进行氧化而不引起金属走线20剥落,需要将氧化剂溶液进行稀释,并且控制氧化时间。Specifically, the step S2 is specifically: first patterning the first metal layer M1, forming a plurality of criss-crossing metal traces 20, and oxidizing the metal traces 20 in the plurality of transparent regions 11 by the oxidant solution. The side surface forms a metal oxide layer 21 located on the side of the metal trace 20 in the plurality of light-transmissive regions 11; in order to oxidize only the side surface of the metal trace 20 without causing the metal trace 20 to peel off, the oxidant solution needs to be diluted. And control the oxidation time.
具体地,所述氧化剂溶液为双氧水。Specifically, the oxidant solution is hydrogen peroxide.
具体地,所述金属走线20的材料为铜;所述金属氧化层21为氧化铜。Specifically, the material of the metal trace 20 is copper; and the metal oxide layer 21 is copper oxide.
综上所述,本发明的阵列基板包括衬底基板以及设于所述衬底基板上的多条纵横交错的金属走线;所述衬底基板具有多个透光区;所述金属走线位于多个透光区的部分的侧面均设有金属氧化层,该金属氧化层有利于大幅改善透光区的金属走线边缘及弯曲位置的消偏现象,减少透光区漏光,提高液晶显示面板的对比度。本发明的阵列基板的制作方法,通过在衬底基板上的第一金属层中形成多条纵横交错的金属走线,以及位于多个透光区中金属走线侧面的金属氧化层,该金属氧化层有利于大幅改善透光区的金属走线边缘及弯曲位置的消偏现象,减少透光区漏光,提高液晶显示面板的对比度。In summary, the array substrate of the present invention includes a base substrate and a plurality of criss-crossing metal traces disposed on the base substrate; the base substrate has a plurality of light transmissive regions; the metal traces A metal oxide layer is disposed on a side surface of a portion of the plurality of light-transmitting regions, and the metal oxide layer is beneficial for greatly improving the depolarization phenomenon of the metal trace edge and the bending position of the light-transmitting region, reducing light leakage in the light-transmitting region, and improving liquid crystal display. The contrast of the panel. The method for fabricating an array substrate of the present invention comprises forming a plurality of criss-crossing metal traces in a first metal layer on a base substrate, and a metal oxide layer on a side of the metal traces in the plurality of light-transmitting regions, the metal The oxide layer is beneficial for greatly improving the depolarization phenomenon of the edge and the bending position of the metal trace in the light-transmitting region, reducing the light leakage in the light-transmitting region, and improving the contrast of the liquid crystal display panel.
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。In the above, various other changes and modifications can be made in accordance with the technical solutions and technical concept of the present invention, and all such changes and modifications are within the scope of the claims of the present invention. .

Claims (12)

  1. 一种阵列基板,其特征在于,包括:衬底基板以及设于所述衬底基板上的多条纵横交错的金属走线;所述衬底基板包括多个阵列排布的透光区;所述金属走线位于多个透光区的部分的侧面均设有金属氧化层。An array substrate, comprising: a substrate substrate; and a plurality of criss-crossing metal traces disposed on the substrate; the substrate comprising a plurality of arrays of light transmissive regions; The metal traces are provided with metal oxide layers on the sides of the portions of the plurality of light transmissive regions.
  2. 如权利要求1所述的阵列基板,其特征在于,所述金属走线的材料为铜;所述金属氧化层为氧化铜。The array substrate according to claim 1, wherein the metal trace is made of copper; and the metal oxide layer is copper oxide.
  3. 一种阵列基板的制作方法,其特征在于,包括如下步骤:A method for fabricating an array substrate, comprising the steps of:
    步骤S1、提供衬底基板;在所述衬底基板上形成第一金属层;Step S1, providing a substrate; forming a first metal layer on the substrate;
    所述衬底基板包括多个阵列排布的透光区;The substrate substrate includes a plurality of light-transmissive regions arranged in an array;
    步骤S2、在所述第一金属层中形成多条纵横交错的金属走线,并在位于多个透光区中金属走线的侧面形成金属氧化层。Step S2, forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light transmissive regions.
  4. 如权利要求3所述的阵列基板的制作方法,其特征在于,所述步骤S2具体步骤为:先图案化所述第一金属层,形成多条纵横交错的金属走线,再通入氧气或臭氧,氧化位于多个透光区中金属走线的侧面形成金属氧化层。The method of fabricating an array substrate according to claim 3, wherein the step S2 is specifically: first patterning the first metal layer to form a plurality of criss-crossing metal traces, and then introducing oxygen or Ozone, which oxidizes the side of the metal traces in the plurality of light-transmissive regions to form a metal oxide layer.
  5. 如权利要求3所述的阵列基板的制作方法,其特征在于,所述步骤S2具体步骤为:先通入氧气,氧化位于多个透光区中第一金属层的侧面形成金属氧化层,再图案化所述第一金属层,形成多条纵横交错的金属走线及位于多个透光区中金属走线的侧面的金属氧化层。The method of fabricating an array substrate according to claim 3, wherein the step S2 comprises the steps of: first introducing oxygen gas, oxidizing a side of the first metal layer in the plurality of light-transmitting regions to form a metal oxide layer, and then The first metal layer is patterned to form a plurality of criss-cross metal traces and a metal oxide layer on the sides of the metal traces in the plurality of light-transmissive regions.
  6. 如权利要求3所述的阵列基板的制作方法,其特征在于,所述步骤S2具体步骤为:先通过金属氧化物靶材在所述第一金属层上沉积一层金属氧化层,再图案化第一金属层及金属氧化层,形成多条纵横交错的金属走线,以及位于多个透光区中金属走线侧面的金属氧化层。The method of fabricating an array substrate according to claim 3, wherein the step S2 is specifically: first depositing a metal oxide layer on the first metal layer through a metal oxide target, and then patterning The first metal layer and the metal oxide layer form a plurality of criss-crossing metal traces and a metal oxide layer on the side of the metal traces in the plurality of light-transmissive regions.
  7. 如权利要求3所述的阵列基板的制作方法,其特征在于,所述步骤S2具体步骤为:先图案化所述第一金属层,形成多条纵横交错的金属走线,通过金属氧化物靶材在所述金属走线上沉积一层金属氧化层,图案化所述金属氧化层,形成位于多个透光区中金属走线侧面的金属氧化层。The method of fabricating an array substrate according to claim 3, wherein the step S2 is specifically: first patterning the first metal layer to form a plurality of criss-crossing metal traces, and passing through the metal oxide target A metal oxide layer is deposited on the metal trace, and the metal oxide layer is patterned to form a metal oxide layer on a side of the metal trace in the plurality of light transmissive regions.
  8. 如权利要求3所述的阵列基板的制作方法,其特征在于,所述步骤S2具体步骤为:先图案化所述第一金属层,形成多条纵横交错的金属走线,再通过氧化剂溶液氧化位于多个透光区中金属走线的侧面,形成位于多个透光区中金属走线侧面的金属氧化层。The method of fabricating an array substrate according to claim 3, wherein the step S2 is specifically: first patterning the first metal layer to form a plurality of criss-crossing metal traces, and then oxidizing by an oxidant solution Located on the side of the metal traces in the plurality of light transmissive regions, forming a metal oxide layer on the side of the metal traces in the plurality of light transmissive regions.
  9. 如权利要求4或5所述的阵列基板的制作方法,其特征在于,氧化温度低于350°,氧化时间小于或等于3分钟,气体流量小于3000SCCM。The method of fabricating an array substrate according to claim 4 or 5, wherein the oxidation temperature is lower than 350°, the oxidation time is less than or equal to 3 minutes, and the gas flow rate is less than 3000 SCCM.
  10. 如权利要求3所述的阵列基板的制作方法,其特征在于,所述金属走线的材料为铜;所述金属氧化层为氧化铜。The method of fabricating an array substrate according to claim 3, wherein the metal trace is made of copper; and the metal oxide layer is copper oxide.
  11. 一种阵列基板的制作方法,其特征在于,包括如下步骤:A method for fabricating an array substrate, comprising the steps of:
    步骤S1、提供衬底基板;在所述衬底基板上形成第一金属层;Step S1, providing a substrate; forming a first metal layer on the substrate;
    所述衬底基板包括多个阵列排布的透光区;The substrate substrate includes a plurality of light-transmissive regions arranged in an array;
    步骤S2、在所述第一金属层中形成多条纵横交错的金属走线,并在位于多个透光区中金属走线的侧面形成金属氧化层;Step S2, forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light-transmitting regions;
    其中,所述步骤S2具体步骤包括下列一者:The specific step of the step S2 includes the following one:
    先图案化所述第一金属层,形成多条纵横交错的金属走线,再通入氧气或臭氧,氧化位于多个透光区中金属走线的侧面形成金属氧化层;以及First patterning the first metal layer to form a plurality of criss-crossing metal traces, and then introducing oxygen or ozone to oxidize a side of the metal traces in the plurality of light-transmitting regions to form a metal oxide layer;
    先通入氧气,氧化位于多个透光区中第一金属层的侧面形成金属氧化层,再图案化所述第一金属层,形成多条纵横交错的金属走线及位于多个透光区中金属走线的侧面的金属氧化层。First introducing oxygen gas, oxidizing a side of the first metal layer in the plurality of light-transmissive regions to form a metal oxide layer, and then patterning the first metal layer to form a plurality of criss-crossing metal traces and located in the plurality of light-transmitting regions A metal oxide layer on the side of the metal trace.
  12. 一种阵列基板的制作方法,其特征在于,包括如下步骤:A method for fabricating an array substrate, comprising the steps of:
    步骤S1、提供衬底基板;在所述衬底基板上形成第一金属层;Step S1, providing a substrate; forming a first metal layer on the substrate;
    所述衬底基板包括多个阵列排布的透光区;The substrate substrate includes a plurality of light-transmissive regions arranged in an array;
    步骤S2、在所述第一金属层中形成多条纵横交错的金属走线,并在位于多个透光区中金属走线的侧面形成金属氧化层;Step S2, forming a plurality of criss-crossing metal traces in the first metal layer, and forming a metal oxide layer on sides of the metal traces in the plurality of light-transmitting regions;
    其中,所述步骤S2具体步骤包括下列一者:The specific step of the step S2 includes the following one:
    先通过金属氧化物靶材在所述第一金属层上沉积一层金属氧化层,再图案化第一金属层及金属氧化层,形成多条纵横交错的金属走线,以及位于多个透光区中金属走线侧面的金属氧化层;以及First depositing a metal oxide layer on the first metal layer through the metal oxide target, and then patterning the first metal layer and the metal oxide layer to form a plurality of criss-crossing metal traces, and being located in the plurality of light transmissive layers a metal oxide layer on the side of the metal trace in the region;
    先图案化所述第一金属层,形成多条纵横交错的金属走线,通过金属氧化物靶材在所述金属走线上沉积一层金属氧化层,图案化所述金属氧化层,形成位于多个透光区中金属走线侧面的金属氧化层。First patterning the first metal layer to form a plurality of criss-crossing metal traces, depositing a metal oxide layer on the metal trace through the metal oxide target, patterning the metal oxide layer to form a a metal oxide layer on the side of the metal trace in the plurality of light transmissive regions.
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