TWI272424B - Liquid crystal display and fabricating the same - Google Patents

Abstract

Due to the added formation process for reflective electrodes in semi-transmissive liquid crystal display devices, an increase in the number of manufacture processes is inevitable, raising manufacture costs as a result. After laminating a transparent conductive layer, (a buffer layer), and a reflective metal layer, form photosensitive resin patterns, whose thin film in the reflective electrode-forming area is thicker than the thin film in the transmissive electrode-forming area, using halftone exposure technology. After the formation of a reflective electrode in the size of a transmissive electrode and a reflective electrode combined, using the aforementioned photosensitive resin patterns, thickness of the aforementioned photosensitive resin patterns is reduced, and a transmissive electrode and a reflective electrode may be formed, using 1 photomask, by removing the reflective metal layer (and a buffer layer) on the transmissive electrode and forming a transmissive electrode. This way, an increased number of photo etching processes is avoided.

Description

[Technical Field] The present invention relates to a liquid crystal display device having a color image display function, and more particularly to a liquid crystal display device relating to a transflective type. [Prior Art] At the end of recent years, due to advances in fine processing technology, liquid crystal material technology, and high-density assembly technology, liquid crystal display devices of 5 to 50 cm diagonal are widely used in television images or various image displays in accordance with commercial standards. on. Further, in addition to the RGB colored layer formed on one of the two glass substrates constituting the liquid crystal panel, color development can be easily realized. In particular, the built-in switching elements in each element, that is, the active liquid crystal panel, can alleviate the low-order distortion, and can also increase the speed of the response, and can ensure the image is highly contrasted. The above liquid crystal display device (liquid crystal panel) is generally arranged in a matrix shape by 2 〇〇 to 12 〇〇 15 scanning lines and 3 〇〇 to 1600 signal lines. Recently, in order to support the expansion of capacity, large-screen and high-definition have been started. Fig. 7 shows the assembled state of the liquid crystal panel, and the semiconductor integrated circuit wafer 3 to which the driving signal is supplied is connected to one of the transparent insulating substrates constituting the liquid crystal panel 1 by using a conductive adhesive. For example, a COG (Chip - 〇n - Glass) method on the glass substrate 2 20, the formed scan line electrode terminal group 5, or a conductive medium type based on a poly-arylene film-based resin film The appropriate adhesion|alignment], the TCP film 4 having the metal "the tin-plated copper-plated terminal" is dry-bonded to the electrode terminal group 6 of the signal line, and the fixed TCP (TaPe - Carrier - Package) is assembled so that Supply the electrical signal 1272424 to the image display unit. For convenience of explanation, the above two types of assembly methods are shown in a graph, but in practice, any one of them can be appropriately selected. It is located substantially at the center of the liquid crystal panel 1, and the wiring between the electrodes, the scanning line, and the electrode terminals 5 and 6 of the signal line connected to the display unit is not required. The same conductive material is used for the electrode terminal groups 5 and 6. Composition. 9 is a transparent conductive counter electrode which is commonly used for all liquid crystal cells, and an opposite glass substrate or color filter of another transparent insulating substrate on the opposite surface. Fig. 8 is a view showing an equivalent circuit 10 of an open-source device in which an insulating gate type thin film transistor 1 is placed in accordance with an active liquid crystal display device of each element. Among them, '11 (7 in the seventh figure) is a broom line, 12 (8 in the seventh figure) is a signal line, 13 is a liquid crystal cell, and the liquid crystal cell 13 is used as an electrical capacity element. The elements drawn by the solid line are formed on the one side glass substrate 2 constituting the liquid crystal panel, and the opposing electrode 14 common to all the liquid crystal cells 13 is drawn by a broken line, and is formed on the main surface of the other surface glass substrate 9 opposed to each other. When 15 , the edge-gate type thin-film transistor has a defect of 1 删 or a liquid crystal cell. When the power is low, or when the gray scale of the image is emphasized, an auxiliary storage capacity of 15 may be applied to the liquid crystal cell, and the circuit is slightly ingenious to expand the time of the liquid crystal cell 13 as the load. The constant 16 is the storage capacity of the common bus bar having the accumulation capacity of 15. 2〇, 9th diagram is not a major part of the image display part of the liquid crystal display device. *Fig. 'The two glass substrates 2 and 9 constituting the liquid crystal panel 1 are made of resin fiber, dimensional, hollow particles or color filter. In the light sheet 9, a spacer such as a columnar spacer (not shown) is formed, and a sealing material composed of an organic resin is formed around the glass substrate 9 in accordance with a predetermined number. Sealing gap (Gap) is sealed with a sealing material 272424 (not illustrated by any diagram) to form a sealed space, and the sealed space is filled with liquid crystal 17 . • When the color is displayed in the shell, 'any kind of dye or pigment called the colored layer 18 or both' is used to cover the sealed space of the glass substrate 9 with an organic film having a thickness of about 1 to 2 // m. Will have a color rendering function. The glass substrate 9 ′ at this time is a commonly known color filter (c〇i〇r Fiiter, for short, according to the nature of the liquid crystal material 17, the upper surface of the glass substrate 9 or the lower surface of the glass substrate 2, or After the polarizing plate 19 is attached to both sides, the liquid crystal panel can emit the function of the electrical optical component. Most of the liquid crystal panels on the market currently use TN (Twist Nematic) liquid crystal materials, usually requiring two polarized lights. The board 19 is not shown, but the transmissive liquid crystal panel is provided with a back light source as a light source and irradiates white light from below. On the two glass substrates 2 and 9 connected to the liquid crystal 17, a thickness of about 〇 is formed. The 1 V m polythene film-based resin film 2 〇, which is an alignment film that determines the direction of the liquid crystal molecules. 21 is a drain electrode and a transparent conductive halogen electrode 22 connected to the insulating gate type thin film transistor 1 〇. Most of the drains (wiring) are formed simultaneously with the signal line (source φ pole line) 12. Between the signal line 12 and the drain 21 is the semiconductor layer 23', the details of which are illustrated later. In contrast to the color filter 9 on the boundary of the color layer 8 Forming a thickness of about 1/.1//111 (> film layer 24, which is to prevent 20 external light sources from being irradiated onto the semiconductor layer 23, the scanning line 11 and the signal line 12). The black matrix frame (Black Matrix for short, BM) is a common technology. The following describes the structure of an insulated gate type thin film transistor as a switching element and related manufacturing methods. Currently, the widely used insulating gate type Thin 1272424 • There are two types of film transistors, one of which is called an etch stop layer type, which will be explained in detail in the examples. Figure 10 is an active base plate (a semiconductor device for display devices) that constitutes a liquid crystal panel in the past. The unit pixel plan view; the section on the A-A, B-B, and C-C' lines of the 10th (e) diagram is shown in Fig. 5, and the following is a brief description of the manufacturing process. As shown in Fig. 10(a) and Fig. u(a), the glass substrate 2 having a thickness of about q.5 to Mmm is used as an insulating substrate having excellent heat resistance, chemical resistance and transparency. For example, in C0RNING System/commodity name 1737 on a main plane of spring, making A vacuum film forming apparatus such as SPT (sputtering) is coated with a thin metal film having a thickness of about ο.1 to 0.3, and a scanning line 兼 having a gate 11A is formed by a microfabrication technique. Accumulation capacity line 16. After comprehensively reviewing the material of the scanning line, it is compatible with heat resistance, chemical resistance, fluorine resistance and conductivity, and generally uses metals such as Cr, Ta, m〇W alloys with excellent heat resistance or Alloy. 15 With the large screen and high refinement of the LCD panel. To reduce the resistance of the sweeping wire, the material used for the scanning wire using A1 (aluminum) is reasonable, but the heat resistance of the single A1 is not good. Therefore, the above-mentioned heat-resistant metal Ci·, Ta, Mo or the human cerium layer $, or an anodic oxidation-applying oxide layer (曰A1203) on the surface of A1 is a technique currently used. That is to say, the second line of the sweeping line is composed of more than one metal layer. % - Next, in the whole glass substrate 2, using PCVD (plasma) mounting, for example, a film thickness of about 0·3~ 〇·〇5 ο·! μ m is sequentially coated in the gate insulating Layer 3g of the _SiNx layer of the layer, and almost no impurities, the channel of the insulating gate-type thin film transistor constitutes the first amorphous stone 8 1272424 (A - Si) layer 3 and protected by The insulating layer of the channel constitutes a second layer of tantalum 32 and three layers of film. As shown in Fig. 1(b) and Fig. 11(b), the width of the second SiNx layer on the gate 11A is selectively kept narrower than that of the gate 11A by the micromachining technique. The insulating layer (etching stop layer or channel protective layer) 32D is protected and the first amorphous germanium layer 31 is exposed. Next, similarly, a PCVD apparatus is used to coat impurities such as the scaly second amorphous ruthenium layer 33 with a film thickness of about 0.05/m. As shown in Figure 11(c), Figure 11(c), a vacuum film forming apparatus such as SPT is used to sequentially coat a heat-resistant metal layer having a film thickness of about 0.1 mm, such as Ti, Cr, M. a film layer 34 such as ruthenium, and a low-resistance wiring layer, an octa film layer % having a film thickness of about 33//111, and a film thickness of about 0.1 #m, which is a fine film of the butadiene film layer of the intermediate conductive layer, through fine processing The three thin film layers 34A, 35A and 36A belonging to the source/drain wiring material are laminated to selectively form the drain electrode 21 of the insulating gate type thin film transistor and the signal line 12 having the source. The photosensitive resin pattern used for forming the source/drain wiring is a photomask plate, and the thin film layer 36, the A1 thin film layer 35, and the Ti thin film layer 34 are sequentially etched, and then the source/dipole 12 21 is removed. The second amorphous layer is exposed to the protective insulating layer. = In other fields, the first-amorphous poem buckle is also removed, and the above-mentioned selectivity is formed after the top layer is extremely thin and the surface layer is 3 inches. In this way, under the second SiNx layer 32D of the protective layer, the second amorphous layer will automatically end _, and this manufacturing method is called a money stop layer type. ^Polar/汲(4), 21 and the protective insulating layer - part (number (4)) "face weight" - to avoid the construction of the insulating gate type thin film transistor is private. This - overlap will produce electrical effects with parasitic capacitance Although the smaller the better, 20 1272424 .t depends on the adjustment accuracy of the exposure machine, the accuracy of the mask, the coefficient of expansion of the glass substrate, and the temperature of the glass substrate during exposure. The practical value is about 2 /zm. _ After removing the above-mentioned photosensitive resin pattern, the gate insulating layer which is a transparent insulating layer on the entire glass substrate 2 is also coated with a SiVx layer of about 0.3//m film thickness as a passivation using a pcvD device. The insulating layer 37. The passivation insulating layer 37 as shown in the io (d) and the eleventh (d), the electrode of the scan line and the signal line 12 on the drain 21 and in the field outside the image display portion In the field formed by the terminals, the openings 62, 63, and 64 are formed, and after the passivation insulating layer 37 and the gate insulating layer 30 in the opening portion 10 63 are removed, a part of the eye-catching line is exposed in the opening portion 63. At the same time, the purified insulating layer 37 in the openings 62, 64 is removed, and the exposed portion is removed. The drain part 21 and the signal lines and scan lines η-like opening is formed in the same animal on the capacity of the product line 16 (parallel beam from the pattern electrode) 65 'is exposed part of the storage capacitance line 16.

15 Finally, a vacuum film forming apparatus such as SPT is used to coat a transparent conductive layer having a film thickness of about 0 Å, such as IT 〇 (Indium-Tin-〇χί&), φ or 1Z〇 (Indium-Zine-xxide). As shown in Figs. 10(e) and ii(e), the pixel electrode 22 is selectively formed on the passivation insulating layer 37 including the opening portion 62 by the microfabrication technique, i.e., the active substrate 2 is completed. A part of the scanning line 11 exposed in the opening portion 63 is used as the electrode terminal 5, and a part of the signal line 12 exposed in the opening portion 64 may be used as the electrode terminal 6. As shown in the figure, although the electrode terminals 5A, 6A composed of 1 butyl can be selectively formed on the passivation insulating layer 37 including the openings 63, 64, the connection electrode terminal 5 A is usually formed at the same time. A transparent conductive short circuit line between 6A and 4A.

[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 7-74368 No. 1272424. The reason is that although the figure is not shown in the figure, the electrode terminals 5 and 6 are formed in a slender strip shape and become high-resistance. High resistance in response to static measures. Similarly, although no number is given, the opening portion 65 forms an electrode terminal on the accumulation capacity line 16. 3 When the wiring resistance of the signal line 12 does not cause a problem, the low-resistance wiring layer 35 composed of ? At this time, the source/drain wirings 12 and 21 can be simplified into a single layer by using a heat resistant metal material such as & So, the most important thing is that the source/dice wiring makes (4) the hot metal layer 曰, and ensures the electrical connection with the second amorphous poetry layer. Regarding the heat resistance of the insulated thin pancreatic transistor, Japanese Laid-Open Patent Publication No. Hei 7-74368 has been described in detail. Further, in the first G (4) diagram, the #1 capacity line 2 and the drain 2 1 pass through the gate insulating layer 3, and the accumulation capacity 15 is formed by the area $ 〇 (the diagonal line portion toward the lower right side) in which the plane overlaps, and the detailed description is omitted here. Description. Although the detailed process of the five masks is omitted, the stripe process of the semiconductor layer is rationalized and the contact point formation process is deleted. Therefore, the mask plate of 7 to 8 pieces is required originally because of the dry (four) technology. The introduction of 'now has been reduced to 5, which is expected to significantly reduce process costs. In order to reduce the production cost of the liquid crystal display device, it is first necessary to reduce the process cost of the active substrate, and secondly, it is necessary to reduce the cost of the parts in the panel assembly engineering and the module assembly engineering, which is also a commonly known development target. In recent years, mobile phones have been rapidly popularized. In the beginning, only the power of the caller ID was needed, and as long as the segment type that can be displayed in black and white is sufficient, the liquid crystal display panel now requires not only color display, high definition, and animation display and its 20 1272424 The function is even more in the new moon. "Don't, one of the problems faced by mobile phones #县啻a's service life, use 璟谙 士 疋 ^ battery ^, light brightness and limited backlight because there is no power to consume, ca 』] month nine due to , + . 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 乂 反射 乂 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射 反射The panel 'simplifies the manufacturing method. However, for the insulated gate type transistor, the following will say that the bar is well-known to use the etch-etched insulating gate type transistor. ^ • First with 5 mask processes In the case of one of the main flat surfaces of the glass substrate 2, a vacuum film forming apparatus such as SPT is used to coat the film thickness (Mu's first metal layer, as shown in Fig. 12(4) and Fig. 13(4), through the fine The processing technique selectively forms the broom line 21 having the gate UA and the bitter volume line 16. The stomach then uses the pC VD device on the entire glass substrate 2 to approximately 〇3〇2 15 〇·〇5// The film thickness of m is sequentially coated to form a gate The SiNx layer 30 of the edge layer, and the first-amorphous (tetra) layer 31 composed of the pass-through of the insulating inter-layer thin film transistor, and the impurity-containing f, which is composed of the insulating gate-type germanium film transistor a second amorphous stellite layer composed of a source/no pole and two thin film layers. 2 〇. Second, as shown in Figures 12(b) and 13(b), through fine processing and techniques, On the gate 11Α, the second amorphous tantalum layer 33Α is laminated with the first amorphous layer. The thin layer of the semiconductor layer is formed to form a stripe-shaped semiconductor layer to expose the gate electrode 30. θ 1272424 uses a vacuum film forming apparatus such as SPT And sequentially coating a heat resistant metal layer having a film thickness of about oj〆m, such as a Ti film layer 34, and an AL film layer 35 of a low resistance wiring layer having a film thickness of about 0.3 em, and a film thickness of about 1 m. The intermediate conductive layer, for example, the Ti thin film layer 36, is sequentially coated with the source/5/dip wiring material. Then, through the microfabrication technique, the source of the three-layer thin film is sequentially etched by using a photosensitive resin pattern/ /汲polar wiring material, second amorphous germanium layer 33 A and first amorphous germanium layer 3,8 The gate insulating layer 30, as shown in Figures 12(c) and 13(C), is laminated as an insulating gate type electron crystal as if it overlaps with a portion of the gate UA. The drain of the 10 body is 2 1, and the signal line 12 having the source is selectively formed. When the source/drain wirings 12 and 21 are formed, the photosensitive resin pattern is used as a mask, followed by the Ti film layer 34A1 and the film. After the layer 3S and the Ti thin film layer 36 are etched, the second amorphous germanium layer 33 A between the source/drain wirings 12 and 21 (the channel formation region) and the first amorphous germanium layer 3 are sequentially etched. A, the first amorphous 15 矽 layer 31A is left to be etched by about 0·05 〇·1# m. The source/drain wirings 12 and 21 are formed by etching the first amorphous slab layer 31 and Φ about 0·05~ο·1"111 after the metal layer is etched, using this type of manufacturing method. The fabricated insulated closed-pole transistor is referred to as channel etching. Further, in terms of the structure of the source/drain wirings 12, 21, Ta, cr, 20 Mo W, etc. can be simplified into a single layer as long as the limitation of the resistance 放 is relaxed. - After the formation of the source/drain wirings 12, 21, the entire glass substrate 2 is coated as a transparent insulating layer to cover the second thickness of the film.

After the SiNx layer is used as the passivation insulating layer 37, the transparent insulating layer is applied as a transparent layer, and the transparency of the film thickness of about 3# m and the high heat resistance of the photosensitive 13 1272424 • acrylic resin are used as the uneven layer. 39. As shown in Figure 12(d) and Figure 13(d), after using a photomask and after selective UV irradiation, a portion of the bucker 21, the scan line 5 and a portion of the signal line 6 The openings 62, 63, and 64 are formed respectively, and the uneven layer 39 is thermally hardened after the development process. Next, 5, the passivation insulating layer 37 in the openings 62, 64 is removed. At the same time, in the opening portion 63, together with the passivation insulating layer 37, the gate insulating layer 3 is removed, and a portion of the drain electrode 21 and a portion of the scan line are respectively exposed in the openings 62, 63 and 64. And a part of the signal line 6. Similarly, the opening portion 65 is formed on the accumulation capacity line 16 and a part of the accumulation capacity line 16 is exposed. As described above, the surface of the uneven layer 39 has a height of 1/(/111 or less), and the metal electrode formed on the uneven layer 39 can exhibit the function of the diffusion electrode. According to the description of Fig. 12(d), 7〇 indicates one of the patterns matching the unevenness, and is equally distributed. The size of the graphic 70 is usually about several #m. In order to avoid light interference caused by the solid pattern, the pattern is randomly distributed in the center 15 of the figure. The short-wavelength ultraviolet ray is irradiated on the surface of the photosensitive acryl resin 39 to strengthen the surface layer. When it is hard-hardened, φ can form irregularities in the surface layer, and is similarly immersed in a strong alkali solution to soften the surface layer. Thereafter, when the film is to be thermally cured, irregularities may be formed on the surface layer, or a photosensitive acrylic resin 39 may be formed in two layers, and a photosensitive 20-acrylic resin having fluidity on one side may be provided with a heat-hardening equivalent. A circular arc, which does not have a flow-sensitive acrylic resin layer, is formed with irregularities or the like, such as a phase, and the related technique has been explained in the first disclosed example, since the object of the present invention is not formed. Convex technology, so the details are omitted here. Such a channel-etched insulating gate type transistor usually has to be 14 / 7; 1272424 on the active US ic ^ * soil coated with SiNx passivation insulation layer 37, then • 匕乂 克 树脂 resin forms the uneven layer 39. Since the residual-type insulation type μ pole type transistor has the protective insulating layer 32D on the channel, even if the purification layer of the active substrate 2 forms a gram The resin 5, the insulating gate type transistor has no change in the electrical characteristics. After the y is formed into the uneven layer 39, the entire glass substrate 2 is covered with a vacuum film coating such as spT to cover the thickness of the 1TO film. · ι ~ 〇 · 2 / / m transparent conductive layer • 士 ITO ' as shown in Figure 12 (e) and Figure 13 (e), through the micro-machining technology. # 'to form the connection electrode 22 A with the opening 62 a passivation electrode 10 pole 22 penetrating the electrode, a scan line electrode terminal 5A including the opening 63, and an imaginary line terminal 6A including the opening portion 64. The connection electrode formed by the penetration electrode and the reflective electrode 22A is formed as a part of the halogen electrode 22. Although it is not necessary to have a connection The electrode 22 A is preferably disposed between the subsequent 15 reflective electrodes in order to prevent a portion of the drain 21 from being damaged due to subsequent manufacturing damage. Finally, a vacuum film forming apparatus such as SPT is used. The buffer layer 92 having a thickness of about 〇 φ φ melon, such as Mo, and a ruthenium reflectivity metal layer 93 having a thickness of about o.iu /zm, such as aluminum, as shown in Figs. 12(f) and 13 ( f) Fig. No. In order to cause a portion to overlap with the transparent conductive pixel electrode 22, 20 buffer layer 92 (41) and aluminum layer 93 (41) are laminated to form a reflective electrode 41, thus - half-through The active substrate 2 of the transmissive liquid crystal display device. Although it is necessary to avoid _ · buffer layer 92 (41) directly contact aluminum or ITO, due to the photographic reduction of the ITO and the photoresist stripping solution, so that the Ming also followed the peeling effect of the battery, but to reduce the lye Chemical potential, aluminum alloy containing several % Nd 15 1272424

Al (Nd), buffer layer 92 (41) is not required. As shown in Fig. 12(c), the accumulation capacity line 15 and the region 5〇 (the oblique portion toward the lower right side) in which the storage capacity line 16 and the drain electrode 21 are overlapped in the plane are formed by the gate insulating layer 3, and the accumulation capacity 15 is formed in the front stage. The accumulation electrode 15 may be formed by superimposing the accumulation electrodes formed on the scanning line 11 and the scanning line 11 through the insulating layer plane including the gate insulating layer 3A. At this time, although the storage electrode 22 is connected to the penetration electrode 22 or the reflection electrode 41 of the drain electrode 21, the detailed description thereof will be omitted. In the above-described transflective liquid crystal display device, a reflective electrode is additionally formed on the transmissive liquid shame display device, and the number of photomask plates is increased from five sheets to a sheet, which inevitably increases the manufacturing cost. In order to control manufacturing costs, in addition to reducing costs in the production of 〇大, it is also important to shorten the number of manufacturing projects. 15 20 In view of the relevant status quo, the present invention has developed a technique similar to that of a halftone image exposure technique for the purpose of achieving a stripe process and a source/dice wiring formation process for processing a semiconductor layer using a reticle mask. The reticle plate handles the reflective electrode and the penetrating electrode', which is a reduction manufacturing process. The present invention is not manufactured by using different kinds of masks which are different from the conventional penetrating electrode and the reflective electrode. The present invention firstly laminates the transparent conductive layer and the reflective metal layer, and then transmits the halftone image exposure technology to reflect the electricity. The film thickness in the field forms a photosensitive resin pattern which is thicker than the thickness of the film in the field of the penetrating electrode. The photosensitive film (4) is formed by the (4) photosensitive (four) (four) shape, and the size of the transmissive electrode and the reflective electrode is formed to form a reflective electrode, and the two-resin resin pattern is reduced. The film thickness is removed after the reflective metal layer on the penetrating electrode is removed to form a penetrating electrode. 16 25 1272424. SUMMARY OF THE INVENTION The present invention provides a liquid crystal display device having a structure in which at least an insulating gate-type thin film electro-crystal 5 body can be used as a main plane of a first transparent insulating substrate. The scanning line of the insulated gate type thin film transistor gate can be used as a signal line of the source wiring, and a unit of the pixel electrode connected to the drain wiring is arranged on the first transparent insulating substrate. a second matrix, the liquid crystal is filled between the second transparent insulating substrate or the color filter opposite to the first transparent insulating substrate, and is formed on the main plane of the first transparent insulating substrate An insulated gate type transistor, a scan line, and a signal line; having an opening at least on the drain, a surface of the portion having a concave-convex transparent insulating layer formed on the first transparent insulating substrate; and having the bump In the field of a transparent insulating layer, one or more reflective metal layers and a transparent conductive layer are laminated to form a reflective electrode, and in other fields, including the opening, and the transparent conductive The layer continuously forms a transparent conductive penetrating electrode. The present invention also provides a method for fabricating a liquid crystal display device, which is formed on a principal plane of a first-transparent insulating substrate, and has at least an insulating gate-type thin film transistor which can be used as the insulating gate type thin film transistor. The scanning 20 line of the gate can be used as the signal line of the source wiring, and the unit of the pixel electrode connected to the drain wiring is arranged on the first transparent insulating substrate to be two Λ 17 10 15 20 1272424 The meta-matrix is between the two transparent insulating substrates or the color filters opposite to the first insulating substrate, and is characterized in that: an insulating gate type transistor, a sweeping line, and a signal line are formed. On the main plane of the first transparent insulating glazing panel; at least the opening portion on the drain and on the surface of the first ribbed substrate, formed on the surface of the /3⁄4 g smear main body: /, the injured shoulder region Having a concave-convex transparent insulating layer, forming a transparent conductive layer and a metal layer above the layer, and including the opening, forming a reflective electrode with a concave-convex transparent insulating layer An electric penetrating electrode, the film 2 on the reflecting electrode is a photosensitive tree 乂, which is thicker than the thickness of the thin electrode on the penetrating electrode, and the photosensitive resin pattern is used as a mask = genus layer Thereafter, the transparent conductive layer is exposed; reducing the sensitization reduces the thickness of the film: == after the metal layer in the field is formed by the metal layer of the field and the formation of the through electrode, and the conductive layer is selectively removed Thereafter, the mask edge and the photosensitive resin pattern for reducing the thickness of the film::&' remove the metal layer in the field of the penetrating electrode to expose the transparent conductive penetrating electrode. In the invention of manufacturing a semi-transmissive liquid crystal display device, the transparent: = (with: punch layer) reflective metal layer is laminated, and the film thickness in the field of the halftone shadow electrode is formed to form a more transparent bond. Photosensitive resin pattern with thick film thickness, adopting ==Γ pattern, matching the size of the penetrating electrode and the reflecting electrode 9 to rationalize the technique of forming a toothed electrode

10 15 20 1272424 Mainly, according to this structure, various active substrate schemes are proposed. Therefore, compared with the previous manufacturing methods, it is expected to reduce the number of photographic etching projects, which will help to significantly reduce costs. In addition, since the penetrating electrode and the reflecting electrode are simultaneously formed, the adjustment accuracy of the mask plate between the electrodes becomes 〇, although the micro-element electrode can be enlarged, so that the aperture ratio can be increased and the brightness can be improved. Display images. Moreover, since the precision of the engineering graphics is not high, it will have a great influence on the yield or quality = and it is easy to manage production. According to the description, the essentials of the present invention can be clearly understood. The main point is that when manufacturing a semi-transmissive liquid crystal display device, the transparent conductive layer and the (with buffer layer) reflective metal layer are laminated, and then transmitted through a halftone image exposure technique. The film thickness in the field of electrode formation forms a photosensitive resin pattern which is thicker than the skin thickness in the field of penetrating electrode formation. The photosensitive resin pattern is used to form a reflective electrode in combination with the size of the penetrating electrode and the reflecting electrode. The film thickness of the photosensitive resin pattern is reduced, and the reflective metal layer on the penetrating electrode is removed to form a penetrating electrode, that is, the formation of the penetrating electrode and the reflecting electrode can be processed by using a single mask plate, Externally including liquid crystal display devices such as scanning lines, signal lines, halogen electrodes, 4 Pfl insulating layers, etc., or film thicknesses, or the manufacturing method thereof, it is not difficult to understand that these are Invention (4). In addition, the second semiconductor layer of the H-edge gate type _ transistor is not limited to

19 1272424 [Embodiment] The following is an example of the implementation of the 1p ΰ σ 兄 月 本 根据 根据 according to the brothers 1 to 6 and the like. Fig. 1 is a cross-sectional view showing a manufacturing engineering sectional view on the κ line of the first (h) diagram, β Β, and line n: c ′. Similarly, after changing the m-part design of the liquid crystal display, the reference examples are shown in the top and the fourth drawing. The fifth and sixth figures show the active substrate plan view and cross-sectional view of the reference example 2. For the same parts as the previous examples, the same symbols will be attached and the details will be omitted. Regardless of the insulating gate type transistor or the accumulation capacity, the present invention adopts any configuration or form. The characteristics of the present invention exist in the manufacture of a transparent resin layer having a concavo-convex layer (which is diffusing to the reflective electrode). Although the example is only a detailed description of the five-piece mask process using the channel remnant type, even if the five-piece mask is used to prevent the (four) stop type, the five-piece mask is evenly rationalized. The plate system is also affected. In the example, as shown in Figures 1(d) and 2(d), on the bungee h, on a portion 5 of the scan line, and on a portion 6 of the signal line, The manufacturing process of the uneven layer 39 having the openings 62, 63, and 64, respectively, before exposing a portion of the electrode, is the same as in the prior embodiment. Next, 'using a vacuum film forming apparatus such as SPT, including a transparent conductive layer 91 having a film thickness of about 〇1 to 〇.2 #πι, such as Ting, and a coating film having a thickness of about 〇·1 scoop of buffer layer 92 'for example, y [ 〇, and the thickness of the coated film is about 〇·1~〇.2 from the 鬲reflective metal layer 93, for example, ü, using a halftone image exposure 20 1272424 light technology to form the 8 1A (41) in the field of matching reflective electrode formation The thickness of the film is, for example, m, 81b (22) in the field of penetration electrode formation, 81B (5A) in the field of electric terminal formation, and photosensitive resin which is thicker than the thickness of the 81B (6A) film of 1.5 // m. Graphics 8丨a, 8丨b. 5 When the liquid crystal display device substrate is manufactured in the h-shape, the photosensitive resin patterns 81A and 81B are usually made of a photosensitive resin of a general positive resist type, and the reflective electrode forming field 81A is black, that is, after the Cr film is formed. The field of penetration electrode formation and the field of electrode terminal formation 81B are gray. For example, the shape of the Line And Space has a width of about 0·5~1.5 // m, and the other collars are white, that is, the mask plate for removing the Cr film can be used. In the gray field, because the resolution of the exposure machine is not enough, it is impossible to analyze the subtle

And Space, which can illuminate the light from the display source to penetrate about half of the mask, and match the characteristics of the remaining film of the positive-resistance photosensitive resin. As shown in Figure 2(e), the photosensitive resin having a cross-sectional shape can be obtained. Graphics 8丨A, 15 81B. As long as a certain amount of ultraviolet light is ensured in the gray area, not only Line And Space, but also thinner films and other films can be used to arrange the light absorption function after formation, and in the future, with the required pattern precision and light wear. The amount of light transmission 'mask technology for halftone images should be more and more advanced. 20, as shown in the i-th (e) and the second (e), the photosensitive resin patterns 81A and 81B are used as the mask sheets, and the highly reflective metal layer 93 and the buffer layer 92 are sequentially or simultaneously etched. Transparent conductive layer 91. Specifically, the mash treatment (the addition of nitric acid to the phosphoric acid of several % or less) can be simultaneously etched. Film thickness of photosensitive resin patterns 81A, 81B after oxygen polymerization treatment

21 1272424 咸八5// m 'The photosensitive resin pattern 8ΐβ disappears, and the highly reflective metal layers 93(22), 93(5A), 93(6A) that support the penetrating electrode and the -^ terminal are exposed. The photosensitive resin pattern 81C (41) of the film thickness can be directly retained in the field of reflective electrode formation. In the oxygen plasma treatment, it was found that the transparent conductive layer 91 can be protected by reducing the film thickness of the uneven layer 39 composed of the organic = edge layer. Selectively remove the transparent conductive layer by using the photosensitive resin pattern ^81C (41) and the reflective metal layers 93 (22), 93 (5a), and % (10) as the mask sheets as in the first (_ and second) materials. 91, the uneven layer 39 is exposed. As shown in Fig. 1(g) and Fig. 2(g), the photosensitive resin pattern 8ic(w) 1〇 is used as a mask to remove the highly reflective metal layer 93 exposed on the penetrating electrode (22). And the highly reflective metal layers 93 (SA), 93 (6A) on the electrode terminals. At the same time, the buffer layers 92 (22), 92 (5A), and 92 (6A) are also removed, and the penetrating electrode 22 and the electrode terminals 5A, 6A are exposed, respectively. Finally, as shown in FIG. 1(h) and FIG. 2(h), the photosensitive resin pattern 81C (41) is removed by using a photoresist stripping solution to expose the buffer layer 92 (41) and the highly reflective metal layer 93 (41). The laminated reflective electrode 41 completes the manufacturing process of the active substrate 2. In the photoresist stripping process, since the uneven layer 39 composed of the organic resin is exposed on the active substrate 2, it is not necessary to use an oxygen plasma. As in the conventional example, when the highly reflective metal layer 93 is selected from the aluminum alloy Al (Nd), it is not necessary to introduce the buffer layer 92. The active substrate 2 produced at this stage is coated with a color filter to form a liquid crystal panel, that is, the embodiment j of the present invention is completed. Further, although omitted in FIG. 1(h), the brush wire electrode terminal 5A including the transparent conductive, the electrode terminal 6A of the signal line 12, and the short circuit 4 disposed on the periphery of the active substrate 2 are as described in the conventional example. Connect the terminal to the wire 22 1272424 • The transparent conductive layer pattern of the circuit is elongated and has a high-resistance wiring when it is anti-static. • In κ, Example 1, the electrode terminals of this type of knowing wire and the electrode end of the signal line, although there are restrictions on the structure of the transparent conductive layer, it is also possible to adopt a device process that solves this limitation. In addition, the reference example illustrates the relevant inner valley. However, the manufacturing process remains the same, with no changes, and ultimately only the active substrate plan and section drawings. According to the second embodiment, the #1(4) diagram and the second (4) diagram show that when the photosensitive resin pattern is formed by the halftone image exposure technique, the film thickness of the electrode terminal forming region 10 is also thicker as in the field of the reflective electrode formation. , can be made into a metallic electrode terminal. In other words, changing the graphic design changes the structure of the electrode terminals. As a result, the structure of the electrode terminal becomes the same as that of the reflective electrode, as shown in FIGS. 3(h) and 4(h), the transparent conductive layer 91 (5Α), 91 (6-8), the buffer layer 92 (5Α), 92 (6 Α) and highly reflective metal layers 93 (5 Α), 93 (6α) 15 layers should be able to obtain the electrode terminals, while the active substrate 2 is exposed as a high-reflection metal layer of the scanning field electrode terminal 5 Between them, a highly reflective metal layer 93 (6 Α) as a signal φ line electrode terminal 6 is exposed. In the figure, in the example 2#, a short circuit of the short circuit is formed on the periphery of the active substrate 2, and the photosensitive resin pattern film 20 in the field of the short circuit formation is thicker than the through hole forming the cold field. Thinning. The function of the reflective liquid crystal display device is to transmit the reflected light from the reflective electrode. • The observer, therefore, the light generated by passing through the same thickness of the liquid crystal cell: the path difference is about 2 of the transmissive liquid crystal display device. The maximum brightness (reflectance and transmittance) of the transflective liquid crystal display device is different from that of the 23 1272424 70 king. In order to avoid such a situation, both the conventional example and the embodiment 丨 are formed. • The opening portion 38 is formed in the uneven layer 39, and the purified insulating layer and the gate insulating layer in the opening portion are removed to increase the thickness of the liquid crystal cell in the penetration region. The uneven layer 39 can easily form a film thickness of about 3/m, and therefore, the thickness of the liquid crystal cell of the reflecting portion and the penetrating portion can be increased by about 2 times (mdtigap), which is a category of optical design. However, since the toothed electrode 22 is located at the bottom of the extremely deep opening portion 38, when the flat grinding cloth is used for the orientation treatment, it is easy to cause the periphery of the opening portion 38 to become non-I oriented, and it is necessary to make the color filter in the BM. For light shielding, the aperture ratio is thus reduced by 10. It is also possible to make an optical design that emphasizes the reflection characteristics. In this case, the reflection portion and the penetration portion can adopt the same liquid crystal cell thickness, and the opening portion 3 8 is not required. h) Fig. 6(h) shows that the penetrating electrode 22' is formed on the flat field of the concavo-convex layer 39 so that it is located at the same level as the reflective electrode 4's (single gap). The Single gap is not easy to be non-oriented, so it is not necessary to filter the inner circumference of the penetrating electrode 22 and the reflective electrode 41 with BM in the color filter φ light sheet. Therefore, the aperture ratio can be increased by the Multi gap, and the aperture ratio can be supplemented. Insufficient permeability characteristics. 20 The physical cell thickness of the liquid crystal cell depends on the penetration electrode 22 on the active substrate 2 and the distance between the reflective electrode 41 and the opposite electrode formed on the color filter 9. , therefore, changing the color filter The film thickness of the coloring layer 18 on the 9th can change the number of And. In the future, the manufacturing cost of the color filter will increase, but the degree of freedom in optical design can be expanded, so it should be 24 1272424. A variety of optical design techniques and part technology to enhance the optical characteristics of semi-transmissive liquid crystal display devices. • In summary, since the CMOS transmission signal does not need to apply an additional DC bias, the phase father is in the differential signal. It is more easily applied to a system with a low logic voltage (for example, 1 · 8 V ) '5. The present invention saves the number of wirings of the display panel, reduces current consumption, and improves EMI characteristics. The embodiments provided above have highlighted the present invention. The invention is not limited to the spirit and scope of the present invention, and is not intended to limit the scope of the present invention. Various changes and refinements are made. In addition, the subtitles mentioned in the specification are not intended to limit the scope of the content, especially in the background art. The invention is not limited to: the technical features of the present invention are defined by the novelty, the progressiveness of the present invention, and the scope of the patent application appended to the Guardian. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of an active substrate according to Embodiment 1 of the present invention; FIG. 2 is a cross-sectional view of a manufacturing process of an active substrate according to an embodiment of the present invention; FIG. 3 is an embodiment 2 of the present invention. FIG. 4 is a cross-sectional view of an active substrate according to a second embodiment of the present invention, and FIG. 5 is a plan view of an active substrate according to a third embodiment of the present invention; and f6 is a third embodiment of the present invention. Fig. 8 is a perspective view showing the assembled state of the liquid crystal panel; Fig. 8 is an equivalent circuit diagram of a conventional liquid crystal panel; and Fig. 9 is a sectional view of a conventional liquid crystal panel;

25 1272424 The first plan is a conventional active substrate plan view, and the 11th is a conventional active substrate manufacturing engineering sectional view; the 12th is a conventional semi-transmissive plan; The 13th picture of the active substrate is a cross-sectional view of the semi-transmissive liquid crystal display. Earth hungry work [main component symbol description] 11 liquid crystal panel 2··active substrate (glass substrate) 3 half-volume body circuit wafer 4··TCP film 5 · part of metallic scanning line or electrode terminal 5 A · Transparent conductive scan line electrode terminal 6 · A part of the metallic signal line or electrode terminal 6 A : Transparent conductive signal line electrode terminal 9 : Color filter (opposing glass substrate 10: Insulated gate type transistor 11: Sweeping line 11A. Gate wiring, gate 12: signal line (source wiring, source) 14: (on the color filter) opposite electrode 16: Accumulation capacity line 17: Liquid crystal 19: Polarizing plate 20: Orientation film 21 · Deuterium (dip wire, drain) 22: Transparent conductive elemental electrode 'Penetrated electrode 3'. Gate insulating layer 31: No Impurity-containing (first) amorphous slab layer WD: protective insulating layer (etching stop layer, channel protective layer) 33: impurity-containing (second) amorphous slab layer 34: financial hot metal layer 26 0 1272424 36 ·•Intermediate conductive layer 35 ··Resistance metal layer (AL) Sichuan T w π % /— 37 : Passivation insulating layer 38 ·· The layer forms an opening portion of the penetration region 39. (consisting of photosensitive acrylic resin) the uneven layer 41: (highly reflective metal) reflective electrode 50, 52: accumulation capacity forming region 62: (opening on the drain) Portion 63: (the scanning line or the scanning line electrode terminal) opening portion 64: (on the signal line or on the signal line electrode terminal) opening portion 65: (opposing electrode) opening portion t accumulating electrode sia: s1B : 91. Transparent conductive m buffer layer 93: (high reflection

27

Claims (1)

1272424 X. Patent application scope 10 15 kinds of liquid crystal display devices, which can be _ Chu Yi 罝 you are on the main plane of a transparent insulating substrate, at least have a sweep of insulated gate-type gate-type thin film transistor gate The aiming signal line and the connection of the drain wiring are arranged between the second transparent insulating substrate and the second sheet opposite to the transparent insulating substrate, wherein the thin film transistor is used as the ground line. A unit halogen-human element matrix liquid crystal which can be used as a source electrode of the source wiring is filled on a transparent insulating substrate or a color filter on a principal plane of the first transparent insulating substrate to form an insulating gate type transistor. a scan line and a signal line; at least an opening 胄 on the drain, a surface of a portion of the surface having a concave-convex transparent insulating layer formed on the first transparent insulating substrate; and in the field of the uneven transparent insulating layer a layer of a reflective metal layer and a transparent conductive layer stacked as a reflective electrode, and in other fields, including the opening, continuous with the transparent conductive layer A transparent conductive electrode penetration. A manufacturing method of a liquid crystal display device is formed on a principal plane of a first transparent insulating substrate to form at least an insulating gate type thin film transistor, which can be used as the insulating gate type thin film transistor gate. a scanning line, which can be used as a signal line of the source wiring, and a unit formed by a pixel electrode connected to the drain wiring, wherein the first transparent insulating substrate is arranged in a quadratic matrix, and the liquid crystal is filled with the first transparent The second transparent insulating substrate or the color filter opposite to the insulating substrate is characterized by: forming an insulating gate type transistor, a scanning line, and a signal line, wherein the first transparent 28 1272424 The main plane of the insulating substrate is provided with an opening at least on the drain and on the first transparent insulating substrate, and a surface having a concave and convex transparent insulating layer is formed on the surface of the surface, and the substrate is transparent and has a layer of electricity and a layer. After the above metal layer, including the opening portion 5, the reflective electrode having the surface of the concave-convex transparent insulating layer is formed to cooperate with the transparent conductive outer conductive electrode, and the thickness of the film on the reflective electrode is formed to be larger than the through electrode. Engineering of a photosensitive resin pattern having a thick film thickness; 10 exposing the transparent conductive layer by using the photosensitive resin pattern as a mask; and selectively removing the metal layer to reduce the thickness of the photosensitive (four) pattern After the metal layer of the field, the photosensitive layer for reducing the thickness of the film and the metal layer of the penetrating electrode forming region are used as a mask plate, and the transparent conductive layer is selectively removed to expose the transparent insulating; and 15 = less side The thickness of the new resin pattern is the metal 35 in the field of the electrode plate forming through the electrode plate, which is exposed to the "electricity = teeth" 29