201013786 - 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種影像顯示系統，特別有關於〜 種薄膜電晶體基板在顯示區域和墊區域的導線及接a 的構造及其製造方法。 Q藝 【先前技術】 液晶平面顯不器近年來已經被大量應用在各式各 •產品的顯示兀件上。為了提高液晶平面顯示器的顯示。 質，則要提高液晶顯示面板的開口率，並且避免漏光⑴0 leakage)問題的產生。 § 1 然而，在習知的製程中，設置於薄膜電晶體基杈的 掃描線(scan line)或資料線(data line)的形狀通常為雒形 (taper)，當包括液晶顯示面板之影像顯示系統之背光塬舉 置（back light module)照射習知的薄膜電晶體基板時，^ 由於錐形導線含有高反射率金屬，而造成反光進而導致 參液晶顯示面板嚴重的漏光問題。 為了解決液晶顯示面板的漏光問題，習知技術可於 知描線（scan line)或資料線（data line)的下方額外設置— 層遮蔽金屬層，以阻擋背光源裝置產生的光照射至上述 導線造成反光。然而，上述額外設置的遮蔽金屬層會使 液晶顯示面板整體的開口率（aperture ratio)下降，導致液 晶顯示面板亮度降低，造成顯示品質不佳等問題。另外， 習知技術也可於掃描線（scan line)或資料線(data line)上 0773-A33572TWF;P2008011 5 201013786 設置一層氮化矽（SiNx) ’以解決液晶顯示面板的漏光問 題。但是，形成上述氮化矽（SiNx)層所需之例如化學氣相 沉積（CVD)、微影和蝕刻等額外製程會造成製程成本上升 的問題。 因此，亟需一種可克服漏光問題之液晶顯示面板， 以達到較佳的顯示品質。 【發明内容】 本發明之一實施例提供一種影像顯示系統的製造方 法，包括提供一基板’其包括一顯示區域及一墊區域； 依序形成一下金屬層、一中間金屬層、一上金屬層於該 基板上；非等向性钱刻該上金屬層、該中間金屬層及該 下金屬層以在該顯示區域形成一導線，該導線具有一下 金屬線、一中間金屬線及一上金屬線；以及等向性蝕刻 該中間金屬線’使該中間金屬線的寬度窄於該上金屬線 的寬度及該下金屬線的寬度。 本發明另一實施例提供一種影像顯示系統，包括一 薄膜電晶體基板，包括：該薄膜電晶體基板包括一基板， 包括一顯示區域及一墊區域；一導線，設置於該顯示區 域的該薄膜電晶體基底上方，該導線具有一下金屬線、 一中間金屬線及一下金屬線，其中該中間金屬線的寬度 窄於該上金屬線的寬度及該下金屬線的寬度。 【貫施方式】 凊參閱第1圖及第2圖’第1圖為本發明一實施例 〇773-A33572TWF;P2008011 6 201013786 之液晶顯示面板500的示意圖。在本發明實施例中，液 晶顯示面板500可為低溫多晶梦（low temperature poly-silicon)液晶顯示面板。液晶顯示面板500包括一薄 膜電晶體基板202、一彩色濾光片基板204以及填入於上 述基板間之空間内的液晶材料（圖未顯示）。在薄膜電晶體 基板202上設置有複數條掃描線（scan line)與資料線（data line)，以定義出多個晝素區域，而於各晝素區域内則包 括一晝素電極以及作為開關之一薄膜電晶體（TFT)。 ® 第2圖顯示本發明一實施例之薄膜電晶體基板202 在顯示區域212和墊區域214的導線216及作為薄臈電 晶體基板202的内部端子的接合墊218。如第2圓所示， 薄膜電晶體基板具有一顯示區域212和一墊區域214。薄 膜電晶體基板包括複數條導線216,覆蓋於基板上方，每 一個導線216具有一延伸部，延伸至墊區域214，以作為 一接合墊218。導線216例如為用於定義出晝素元件陣列 之掃描線(scan line)或資料線(data line)，在本發明實施例 ® 中’例如為資料線(data line)。藉由例如捲帶式自動接合 帶或軟性印刷電路板等方式，以透過一訊號處理帶206 電性連接第2圖所示的墊區域214的接合墊218與外部 之電路板208。再者，可在接合墊218以及訊號處理帶 206之間設置一異方性導電膠，以強化兩者之間的貼附能 力。 第3a圖〜第3d圖為本發明一實施例影像顯示系統之 導線及接合墊的製程剖面圖。首先，如第3a圖所示，提 0773-A33572TWF;P2008011 7 201013786 供一例如玻璃或石英等透明材料構成的基板100,其包括 一顯示區域212及一墊區域214,上述顯示區域212為形 成薄膜電晶體陣列的區域。 接著，在基板100上形成金屬層，然後圖案化此金 屬層以形成閘極、掃描線；再形成閘極絕緣層、作為載 子通道的多晶矽主動層等薄膜電晶體之元件（圖未顯示）。 其次，依序形成一下金屬層102、一中間金屬層 104、一上金屬層106於上述基板100上，此上金屬層102 ® 及下金屬層例如為鈦、组、鉬、絡等金屬或其合金，而 中間金屬層104例如為高反射率的鋁金屬或其合金。然 後，利用微影製程在上金屬層106上形成光阻圖案108， 以作為姓刻罩幕。 然後，請參照第3b圖，利用乾蝕刻方式非等向性蝕 刻上金屬層106、中間金屬層104及下金屬層102，以在 顯示區域212形成一導線216,上述導線216具有一下金 屬線102a、一中間金屬線104a以及一上金屬線106a。同 — 時，也可以在墊區域214形成接合墊218，上述接合墊 218包括一下金屬墊102b、一中間金屬墊104b及一上金 屬墊106b，再者，接合墊218為錐形（tapered)，且具平 滑侧壁。此時，也同時定義薄膜電晶體陣列的源極/汲極 電極（圖未顯示）。然後，剝除光阻圖案108。 請參照第3c圖，再次利用微影製程以在墊區域214 形成一作為蝕刻罩幕的光阻圖案110,以保護接合墊218。 接著，請參照第3c圖及第3d圖，利用溼蝕刻方式 0773-A33572TWF;P2008011 8 201013786 $向性姓刻中間金屬線104a，使中間金屬線l〇4a的寬度 窄於上金屬線106a的寬度，上述中間金屬線l〇4a的寬 度最好也窄於下金屬線102a的寬度。在此「寬度」是指 上、中間、下金屬線的底面寬度。溼蝕刻方式採用的蝕 刻液最好對於例如鋁的中間金屬線l〇4a的蝕刻速度遠大 於對於上金屬線106a及下金屬線l〇2a的钱刻’使得中 間金屬線l〇4a由侧壁被蝕刻而内凹，但上金屬線i〇6a 及下金屬線i〇2a僅被微量蝕刻或不被蝕刻。在其他實施 例中也可選擇適當的反應氣體，使中間金屬線與下（或上） 金屬線的餘刻選擇比大於10，進行乾蝕刻。接著，剝除 光阻圖案110。為了防止墊區域214的接合墊218(特別是 中間金屬墊）受到水氣而氧化，可在形成晝素電極的同 時’在接合墊218的上表面及侧壁形成一導電保護層 22〇’此導電保護層可以是銦錫氧化物（indium tin oxide ; ιτο)或銦鋅氧化物（indium zinc 〇xide; IZO)等透明導電材 料。形成晝素電極後，可完成薄膜電晶體基板的製作。 第3d圖顯示本實施例形成於影像顯示系統的導線 216及接合墊218 ’亦為沿著第2圖的1-1，線的剖面圖， 此系統包括具有顯示區域212及墊區域214的基板1〇〇; 導線216，設置於顯示區域216的基底1〇〇上方，此導線 216具有一下金屬線102a、一中間金屬線1〇私及一上金 屬線106a’此中間金屬線i〇4a的寬度窄於上金屬線i〇6a 及下金屬線102a的寬度。根據第3d圖所示的導線216 結構，由於中間金屬線l〇4a的寬度較窄，因此，在背光 0773-A33572TWF;P2008011 9 201013786 源通過導線216時，上金屬線106a或下金屬線102a能 夠遮蔽高反射率的中間金屬線104a，而避免因反光而導 致的液晶顯示面板漏光問題，因此，可提高影像顯示系 統的顯示品質。 第4汪圖〜第4e圖為本發明另一實施例之導線及接合 墊的製程剖面圖。第4a圖與第4b圖的製程步驟與第3a 圖及第3b圖的製程步驟相同，在此不贅述。 請參照第4c圖，第4c圖所示的步驟與第3c圖不同 ❿ 之處在於，不形成覆蓋墊區域214的光阻圖案。亦即， 利用溼蝕刻方式等向性蝕刻中間金屬線104a的同時，也 蝕刻中間金屬墊104b，使中間金屬線104a的寬度窄於上 金屬線106a及下金屬線102a的寬度。另一方面，接合 墊218的中間金屬墊104b的寬度窄於該上金屬墊106b 及下金屬墊102b的寬度。 在本實施例中，由於接合墊218的中間金屬墊104b 呈内凹狀，容易造成後續形成的導電保護層220破裂 ® (crack)，因此，為了避免導電保護層220破裂，可進行 第4d〜第4e圖所示的製程。 如第4d圖所示，全面性在顯示區域212及墊區域 214 形成一光感平坦層 （photosensitive planarization)222，本實施例之光感平坦層222例如採用 正型光阻材料，藉由一例如紫外光的光線30，透過包括 遮光區10及透光區20的光罩224，選擇性在墊區域214 對光感平坦層222曝光，接著利用顯影液進行顯影步驟， 0773-A33572TWF;P2008011 10 201013786 以去除光感平坦層222被曝光而產生光化學反應的部 分，而在中間金屬墊104b的侧壁及上金屬墊106b以及 下金屬墊102b之間留下一光感材料222a，如第4e圖所 示。由於上金屬墊106b的寬度寬於中間金屬墊104b的 寬度，因此，上金屬墊106b能夠遮蔽部分光感平坦層的 材料免於曝光，因此，能夠留下上述光感材料222a。然 後，在上金屬墊106b上形成一導電保護層220，此導電 保護層220亦可能形成於接合墊218的侧壁。 ❿ 為了避免導電保護層220破裂，在第4c圖所示的製 程之後，也可進行第4d’〜第4e’圖所示的製程。 第4d’圖與4d圖所示的製程不同之處在於，利用光 罩226取代第4d圖所示的光罩224，光罩226為包括遮 光區10、透光區20以及半透光區40的半色調（half-tone) 光罩，其中遮光區對準顯示區域212,透光區20對準上 金屬墊106b的中央部，而半透光區40則是對準鄰接於 上金屬墊106b中央部的區域。藉由一例如紫外光的光線 ❿ 30，透過上述光罩226，選擇性在墊區域214對光感平坦 層222曝光，接著利用顯影液進行顯影步驟，以去除光 感平坦層222被曝光而產生光化學反應的部分，在墊區 域的基板100及接合墊218上留下一光感材料222a，該 光感材料具有一開口 250,暴露出上述接合墊218的上金 屬墊106b。接著，在上金屬墊106b及光感材料222a上 形成一導電保護層220。藉由在墊區域214形成光感材料 222a，不僅可避免接合墊218氧化，而且由於導電保護 0773-A33572TWF;P2008011 11 201013786 層220不需形成於具有局部内凹侧壁的接合墊上，因此， 可避免導電保護層220破裂。 接著請參考第5圖，其為本發明實施例之包含液晶 顯示面板500之影像顯示系統800之配置示意圖，其中 包含液晶顯示器600,該液晶顯示器具有本發明實施例所 述之液晶顯示面板500,以及一對上下偏光板夾設該液晶 顯示面板500，一背光源裝置設置於下偏光板之下，該液 晶顯示器600可為電子裝置的一部份。一般而言，影像 • 顯示系統800包含液晶顯示器600及輸入單元700,輸入 單元700與液晶顯示器600耦接，並傳輸訊號至液晶顯 示器600，使液晶顯示器600顯示影像。本發明實施例之 液晶顯示器600可包括例如扭轉向列式液晶（TN)、超扭 轉向列式液晶（STN)、多象限垂直配向式液晶（MVA)、 平面切換式液晶（IPS)、邊緣電場切換式液晶（FFS)或其他 液晶種類的顯示器。電子裝置可為行動電話、數位相機、 個人數位助理（PDA)、筆記型電腦、桌上型電腦、電視、 參 車用顯示器、全球定位系統（GPS)、航空用顯示器、數位 相框（Digital Photo Frame)或可播式DVD播放機。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明，任何熟悉此項技藝者，在不脫離本發明 之精神和範圍内，當可做些許更動與潤飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 0773-A33572TWF;P2008011 12 201013786 第1圖為本發明一實施例之液晶顯示面板的示意 圖。 第2圖為本發明一實施例之形成於薄膜電晶體基板 的顯示區域及墊區域的導線及接合墊。 第3a圖〜第3d圖為本發明一實施例之導線及接合墊 的製程剖面圖。 第4a圖〜第4e圖為本發明另一實施例之導線及接合 墊的製程剖面圖。 • 第4d’圖〜第4e’圖為本發明又另一實施例之導線及 接合墊的製程剖面圖。 第5圖為本發明實施例之包含液晶顯示面板之影像 顯示系統之配置示意圖。 【主要元件符號說明】 102〜下金屬層； 106〜上金屬層； 104a〜中間金屬線； 102b〜下金屬墊； 106b〜上金屬塾； 220~導電保護層； 224、226〜光罩； 20~透光區； 222〜光感平坦層； 250〜開口； 100〜基板； 104〜中間金屬層； ❹ 102a〜下金屬線； 106a〜上金屬線； 104b〜中間金屬墊； 108、110〜光阻圖案； 30〜光線； 10〜遮光區； 40〜半透光區； 222a〜光感材料； 0773-A33572TWF;P2008011 13 201013786 202〜薄膜電晶體基板； 206〜訊號處理帶； 212〜顯示區域； 216〜導線； 500〜液晶顯示面板； 700〜輸入單元； 204〜彩色濾光片基板； 208〜電路板； 214〜墊區域； 218〜接合墊； 600〜液晶顯示器； 800〜包含液晶顯示面板之影像顯示系統。201013786 - IX. Description of the Invention: [Technical Field] The present invention relates to an image display system, and more particularly to a structure of a wire and a pad of a thin film transistor substrate in a display region and a pad region, and a method of manufacturing the same . Q Art [Prior Art] LCD flat panel display devices have been widely used in various display devices for various products in recent years. In order to improve the display of the liquid crystal flat panel display. To improve the aperture ratio of the liquid crystal display panel, and to avoid the problem of light leakage (1) 0 leakage). § 1 However, in a conventional process, a scan line or a data line disposed on a substrate of a thin film transistor is generally in the shape of a taper, and includes an image display including a liquid crystal display panel. When the back light module of the system illuminates a conventional thin film transistor substrate, the reflective wire contains a high reflectivity metal, which causes reflection and thus causes serious light leakage of the liquid crystal display panel. In order to solve the problem of light leakage of the liquid crystal display panel, the prior art may additionally provide a layer of shielding metal layer under the scan line or the data line to block the light generated by the backlight device from being irradiated to the above-mentioned wire. Reflective. However, the above-mentioned additionally provided shielding metal layer causes a decrease in the aperture ratio of the entire liquid crystal display panel, resulting in a decrease in brightness of the liquid crystal display panel, resulting in problems such as poor display quality. In addition, the prior art can also provide a layer of tantalum nitride (SiNx) on the scan line or data line 0773-A33572TWF; P2008011 5 201013786 to solve the problem of light leakage of the liquid crystal display panel. However, additional processes such as chemical vapor deposition (CVD), lithography, and etching required to form the above-described tantalum nitride (SiNx) layer cause an increase in process cost. Therefore, there is a need for a liquid crystal display panel that overcomes the problem of light leakage to achieve better display quality. SUMMARY OF THE INVENTION An embodiment of the present invention provides a method for fabricating an image display system, including providing a substrate including a display area and a pad region; sequentially forming a metal layer, an intermediate metal layer, and an upper metal layer. On the substrate; the non-isotropic material engraves the upper metal layer, the intermediate metal layer and the lower metal layer to form a wire in the display region, the wire having a lower metal line, an intermediate metal line and an upper metal line And isotropically etching the intermediate metal line 'so that the width of the intermediate metal line is narrower than the width of the upper metal line and the width of the lower metal line. Another embodiment of the present invention provides an image display system including a thin film transistor substrate, comprising: a substrate including a substrate, a display area and a pad area; a wire, the film disposed on the display area Above the transistor substrate, the wire has a lower metal line, an intermediate metal line and a lower metal line, wherein the width of the intermediate metal line is narrower than the width of the upper metal line and the width of the lower metal line. [Cross-Phase Mode] Referring to Figures 1 and 2, Figure 1 is a schematic view of a liquid crystal display panel 500 of 〇773-A33572TWF; P2008011 6 201013786 according to an embodiment of the present invention. In the embodiment of the present invention, the liquid crystal display panel 500 may be a low temperature poly-silicon liquid crystal display panel. The liquid crystal display panel 500 includes a thin film transistor substrate 202, a color filter substrate 204, and a liquid crystal material (not shown) filled in a space between the substrates. A plurality of scan lines and data lines are disposed on the thin film transistor substrate 202 to define a plurality of halogen regions, and a halogen element is included as a switch in each of the pixel regions. One of the thin film transistors (TFT). Fig. 2 shows a lead 216 of the thin film transistor substrate 202 in the display region 212 and the pad region 214 and a bonding pad 218 as an internal terminal of the thin germanium transistor substrate 202, according to an embodiment of the present invention. As shown in the second circle, the thin film transistor substrate has a display area 212 and a pad area 214. The thin film transistor substrate includes a plurality of wires 216 overlying the substrate, each wire 216 having an extension extending to the pad region 214 to serve as a bond pad 218. The wire 216 is, for example, a scan line or a data line for defining an array of halogen elements, and is, for example, a data line in the embodiment of the present invention. The bonding pads 218 of the pad region 214 shown in Fig. 2 are electrically connected to the external circuit board 208 through a signal processing tape 206 by means of, for example, a tape and tape automatic bonding tape or a flexible printed circuit board. Furthermore, an anisotropic conductive paste can be placed between the bond pads 218 and the signal processing tape 206 to enhance the adhesion between the two. 3a to 3d are cross-sectional views showing the process of the wires and the bonding pads of the image display system according to an embodiment of the present invention. First, as shown in FIG. 3a, a 0773-A33572TWF; P2008011 7 201013786 is provided for a substrate 100 made of a transparent material such as glass or quartz, which comprises a display area 212 and a pad area 214, and the display area 212 is formed into a film. The area of the transistor array. Next, a metal layer is formed on the substrate 100, and then the metal layer is patterned to form a gate and a scan line; and a thin film transistor such as a gate insulating layer and a polysilicon active layer as a carrier channel is formed (not shown). . Next, a metal layer 102, an intermediate metal layer 104, and an upper metal layer 106 are sequentially formed on the substrate 100. The upper metal layer 102 ® and the lower metal layer are, for example, metals such as titanium, group, molybdenum, and The alloy, and the intermediate metal layer 104 is, for example, a high reflectivity aluminum metal or an alloy thereof. Then, a photoresist pattern 108 is formed on the upper metal layer 106 by a lithography process as a surname mask. Then, referring to FIG. 3b, the upper metal layer 106, the intermediate metal layer 104 and the lower metal layer 102 are anisotropically etched by dry etching to form a wire 216 in the display region 212. The wire 216 has a lower metal line 102a. An intermediate metal line 104a and an upper metal line 106a. In the same manner, the bonding pad 218 may be formed in the pad region 214. The bonding pad 218 includes a lower metal pad 102b, an intermediate metal pad 104b and an upper metal pad 106b. Further, the bonding pad 218 is tapered. It has smooth sidewalls. At this time, the source/drain electrodes of the thin film transistor array are also defined (not shown). Then, the photoresist pattern 108 is stripped. Referring to FIG. 3c, the lithography process is again utilized to form a photoresist pattern 110 as an etch mask in the pad region 214 to protect the bond pads 218. Next, referring to FIG. 3c and FIG. 3d, the intermediate metal wire 104a is etched by the wet etching method 0773-A33572TWF; P2008011 8 201013786, and the width of the intermediate metal wire 104a is narrower than the width of the upper metal wire 106a. Preferably, the width of the intermediate metal wire 10a4a is also narrower than the width of the lower metal wire 102a. Here, "width" means the width of the bottom surface of the upper, middle, and lower metal wires. The etching solution used in the wet etching method preferably has an etching rate for the intermediate metal wire 10a of, for example, aluminum much larger than that for the upper metal wire 106a and the lower metal wire 10a2a such that the intermediate metal wire 10a4a is made of a sidewall It is etched and recessed, but the upper metal wire i〇6a and the lower metal wire i〇2a are only slightly etched or not etched. In other embodiments, a suitable reactive gas may be selected such that the ratio of the intermediate metal line to the lower (or upper) metal line is greater than 10 for dry etching. Next, the photoresist pattern 110 is stripped. In order to prevent the bonding pad 218 (especially the intermediate metal pad) of the pad region 214 from being oxidized by moisture, a conductive protective layer 22 may be formed on the upper surface and the sidewall of the bonding pad 218 while forming the halogen electrode. The conductive protective layer may be a transparent conductive material such as indium tin oxide ( ιτο) or indium zinc oxide (IZO). After the formation of the halogen electrode, the fabrication of the thin film transistor substrate can be completed. 3d is a cross-sectional view of the wire 216 and the bonding pad 218' formed in the image display system of the present embodiment, which is also a line along the line 1-1 of FIG. 2. The system includes a substrate having a display area 212 and a pad area 214. The wire 216 is disposed above the substrate 1 显示 of the display area 216. The wire 216 has a lower metal wire 102a, an intermediate metal wire 1 and an upper metal wire 106a'. The width is narrower than the width of the upper metal wire i〇6a and the lower metal wire 102a. According to the wire 216 structure shown in Fig. 3d, since the width of the intermediate metal wire 104a is narrow, when the backlight 0773-A33572TWF; P2008011 9 201013786 is passed through the wire 216, the upper metal wire 106a or the lower metal wire 102a can The high-reflectivity intermediate metal wire 104a is shielded to avoid light leakage of the liquid crystal display panel due to reflection, and thus the display quality of the image display system can be improved. 4th to 4eth are cross-sectional views showing a process of a wire and a bonding pad according to another embodiment of the present invention. The process steps of Figures 4a and 4b are the same as those of Figures 3a and 3b, and are not described here. Referring to Fig. 4c, the step shown in Fig. 4c is different from Fig. 3c in that the photoresist pattern covering the pad region 214 is not formed. That is, the intermediate metal wires 104a are also isotropically etched by wet etching, and the intermediate metal pads 104b are also etched so that the width of the intermediate metal wires 104a is narrower than the widths of the upper metal wires 106a and the lower metal wires 102a. On the other hand, the width of the intermediate metal pad 104b of the bonding pad 218 is narrower than the width of the upper metal pad 106b and the lower metal pad 102b. In this embodiment, since the intermediate metal pad 104b of the bonding pad 218 is concave, it is easy to cause the subsequently formed conductive protective layer 220 to crack. Therefore, in order to prevent the conductive protective layer 220 from being broken, the fourth layer can be performed. The process shown in Figure 4e. As shown in FIG. 4d, a photosensitive planarization layer 222 is formed in the display region 212 and the pad region 214 in a comprehensive manner. The light-sensitive planarization layer 222 of the present embodiment is, for example, a positive-type photoresist material, for example, by using, for example. The ultraviolet light 30 passes through the mask 224 including the light-shielding region 10 and the light-transmitting region 20, selectively exposing the light-sensitive flat layer 222 to the pad region 214, and then performing development steps using the developer, 0773-A33572TWF; P2008011 10 201013786 To remove the portion of the light-sensitive flat layer 222 that is exposed to cause a photochemical reaction, a light-sensitive material 222a is left between the sidewall of the intermediate metal pad 104b and the upper metal pad 106b and the lower metal pad 102b, as shown in FIG. Shown. Since the width of the upper metal pad 106b is wider than the width of the intermediate metal pad 104b, the upper metal pad 106b can shield the material of the partial light-sensitive flat layer from exposure, and therefore, the above-described light-sensitive material 222a can be left. Then, a conductive protective layer 220 is formed on the upper metal pad 106b, and the conductive protective layer 220 may also be formed on the sidewall of the bonding pad 218. ❿ In order to prevent the conductive protective layer 220 from being broken, the process shown in the fourth to fourth to fourth e'' can be performed after the process shown in Fig. 4c. The process shown in FIG. 4d' is different from the process shown in FIG. 4d in that the photomask 224 shown in FIG. 4d is replaced by a mask 226, which includes a light shielding region 10, a light transmissive region 20, and a semi-transmissive region 40. a half-tone mask in which the light-shielding region is aligned with the display region 212, the light-transmitting region 20 is aligned with the central portion of the upper metal pad 106b, and the semi-transmissive region 40 is aligned adjacent to the upper metal pad 106b. The area of the central department. The light-sensitive flat layer 222 is selectively exposed in the pad region 214 by a light ray 30 such as ultraviolet light, and then the developing step is performed by the developer to remove the light-sensitive flat layer 222 from being exposed. In the photochemical reaction portion, a photosensitive material 222a is left on the substrate 100 and the bonding pad 218 of the pad region, and the photosensitive material has an opening 250 exposing the upper metal pad 106b of the bonding pad 218. Next, a conductive protective layer 220 is formed on the upper metal pad 106b and the photosensitive material 222a. By forming the photosensitive material 222a in the pad region 214, not only the bonding pad 218 can be prevented from being oxidized, but also because the conductive protection 0773-A33572TWF; P2008011 11 201013786 layer 220 does not need to be formed on the bonding pad having the partially concave sidewall, The conductive protective layer 220 is prevented from being broken. Please refer to FIG. 5 , which is a schematic diagram of a configuration of an image display system 800 including a liquid crystal display panel 500 according to an embodiment of the present invention, which includes a liquid crystal display 600 having a liquid crystal display panel 500 according to an embodiment of the present invention. And a pair of upper and lower polarizers sandwich the liquid crystal display panel 500. A backlight device is disposed under the lower polarizing plate, and the liquid crystal display 600 can be a part of the electronic device. In general, the image display system 800 includes a liquid crystal display 600 and an input unit 700. The input unit 700 is coupled to the liquid crystal display 600 and transmits signals to the liquid crystal display 600 to cause the liquid crystal display 600 to display images. The liquid crystal display 600 of the embodiment of the present invention may include, for example, a twisted nematic liquid crystal (TN), a super twisted nematic liquid crystal (STN), a multi-quadrant vertical alignment liquid crystal (MVA), a planar switching liquid crystal (IPS), and a fringe electric field. Switchable liquid crystal (FFS) or other liquid crystal display. The electronic device can be a mobile phone, a digital camera, a personal digital assistant (PDA), a notebook computer, a desktop computer, a television, a car display, a global positioning system (GPS), an aviation display, a digital photo frame (Digital Photo Frame) ) or a playable DVD player. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS 0773-A33572TWF; P2008011 12 201013786 Fig. 1 is a schematic view of a liquid crystal display panel according to an embodiment of the present invention. Fig. 2 is a view showing a lead wire and a bonding pad formed on a display region and a pad region of a thin film transistor substrate according to an embodiment of the present invention. 3a to 3d are cross-sectional views showing a process of a wire and a bonding pad according to an embodiment of the present invention. 4a to 4e are cross-sectional views showing a process of a wire and a bonding pad according to another embodiment of the present invention. - 4d' to 4e' are process cross-sectional views of a lead wire and a bonding pad according to still another embodiment of the present invention. Fig. 5 is a schematic view showing the configuration of an image display system including a liquid crystal display panel according to an embodiment of the present invention. [Main component symbol description] 102~low metal layer; 106~upper metal layer; 104a~intermediate metal line; 102b~low metal pad; 106b~upper metal 塾; 220~conductive protective layer; 224,226~ reticle; ~ light transmissive area; 222 ~ light sense flat layer; 250 ~ opening; 100 ~ substrate; 104 ~ intermediate metal layer; ❹ 102a ~ lower metal line; 106a ~ upper metal line; 104b ~ intermediate metal pad; 108, 110 ~ light Resistive pattern; 30~ light; 10~ shading area; 40~ semi-transmissive area; 222a~ light-sensitive material; 0773-A33572TWF; P2008011 13 201013786 202~ thin film transistor substrate; 206~signal processing tape; 212~ display area; 216~ wire; 500~ liquid crystal display panel; 700~ input unit; 204~ color filter substrate; 208~ circuit board; 214~pad area; 218~ bonding pad; 600~ liquid crystal display; 800~ including liquid crystal display panel Image display system.
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