CN109581765A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
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- CN109581765A CN109581765A CN201811260323.9A CN201811260323A CN109581765A CN 109581765 A CN109581765 A CN 109581765A CN 201811260323 A CN201811260323 A CN 201811260323A CN 109581765 A CN109581765 A CN 109581765A
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- metal layer
- display panel
- metal
- substrate
- conducting wire
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 165
- 239000002184 metal Substances 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000007769 metal material Substances 0.000 claims description 38
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 23
- 239000010936 titanium Substances 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 206010019133 Hangover Diseases 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
This application provides a kind of display panel and preparation method thereof, the display panel includes substrate and the display device on the substrate；Wherein, the display panel further includes for the conducting wire on the substrate, and the conducting wire includes at least the first metal layer and second metal layer, and the first metal layer is located on the substrate, and the second metal layer is located on the first metal layer；The area of the second metal layer is not more than the area of the first metal layer.The application eliminates the light-leaking area for being set to conducting wire edge in open region, improves the contrast of display.
Description
Technical field
This application involves display field, in particular to a kind of display panel and preparation method thereof.
Background technique
Liquid crystal display (Liquid Crystal Display, abbreviation LCD) have that external form is light, thin, power consumption is few and
The characteristics such as radiationless pollution, therefore it is widely used in mobile phone, personal digital assistant (PDA), digital camera, notebook
On the various portable electronic devices such as computer.
In the prior art, for large-sized display panel, when backlight enters panel by down polaroid, due to opening
Incident ray in mouth region, exists and the section of metal that is set in open region is non-parallel or vertical component, leads to incident light
When line enters open region, being set to the edge of the conducting wire in open region, there are light-leaking areas, reduce the contrast of display.
Summary of the invention
The application provides a kind of display panel and preparation method thereof, light leakage occurs to solve existing display panel open region
Technical problem.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of display panel comprising substrate and the display device on the substrate；
Wherein, the display panel further includes for the conducting wire on the substrate, and the conducting wire includes at least the first metal layer
And second metal layer, the first metal layer are located on the substrate, the second metal layer is located on the first metal layer.
In the display panel of the application, the metal material of the metal material of the first metal layer and the second metal layer
Material is different.
In the display panel of the application, the metal material of the first metal layer includes titanium or the alloy comprising titanium；
The metal material of the second metal layer includes one of aluminium, copper, gold or silver or more than one composition.
In the display panel of the application, the first metal layer with a thickness of 15 nanometers to 50 nanometers.
In the display panel of the application, the first metal layer includes first part, is located at the first part side
Second part and Part III positioned at the first part other side；
The area of the second metal layer is not more than the area of the first part.
In the display panel of the application, far from the second part of the first part or the side of the Part III
The minimum spacing of boundary and the second metal layer is not less than 150 nanometers.
In the display panel of the application, the conducting wire further includes the third metal layer in the second metal layer；
The metal material of the third metal layer includes one of aluminium, copper, gold or silver or more than one composition.
The production method that the application also proposed a kind of display panel comprising:
One substrate is provided；
The first metal layer is formed on the substrate；
Second metal layer is formed on the first metal layer；
Wherein, the first metal layer include first part, positioned at the first part side second part and be located at
The Part III of the first part other side, the area of the second metal layer are not more than the area of the first part.
In the production method of the application, the metal material of the metal material of the first metal layer and the second metal layer
Material is different；
The metal material of the first metal layer includes titanium or the alloy comprising titanium；
The metal material of the second metal layer includes one of aluminium, copper, gold or silver or more than one composition.
In the production method of the application, far from the second part of the first part or the side of the Part III
The minimum spacing of boundary and the second metal layer is not less than 150 nanometers.
The utility model has the advantages that herein described display panel includes substrate and the conducting wire on the substrate；The conducting wire is extremely
It less include the first metal layer and second metal layer, the first metal layer is located on the substrate, and the second metal layer is located at
On the first metal layer.The area of the second metal layer is not more than the area of the first metal layer.It eliminates and is set to
The light-leaking area at conducting wire edge in open region, improves the contrast of display.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the film layer structure figure of the first embodiment of conducting wire in the application display panel；
Fig. 2 is the film layer structure figure of second of embodiment of conducting wire in the application display panel.
The step of Fig. 3 is the application display panel production method is schemed；
Fig. 4 is a kind of structure chart of the application display panel production method.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
Referring to Fig. 1, Fig. 1 is the film layer structure figure of the first embodiment of conducting wire in the application display panel.
The display panel includes substrate 10 and the display device (not shown) on the substrate 10.
The display panel further includes the conducting wire 20 on the substrate 10.
The substrate 10 can be used as substrate for one of glass substrate, quartz base plate, resin substrate etc., described in progress
The production of pixel electrode.
In one embodiment, the substrate 10 can be flexible base board.The flexible base board can choose polyimides
Film is as substrate.
The conducting wire 20 includes at least the first metal layer 201 and second metal layer 202.
Referring to Fig. 1, the conducting wire 20 includes the first metal layer 201 on the substrate 10 and is located at described the
Second metal layer 202 on one metal layer 201.Orthographic projection position of the second metal layer 202 on the first metal layer 201
In in the first metal layer 201.The area of the second metal layer 202 is not more than the area of the first metal layer 201
In one embodiment, the metal material of the metal material of the first metal layer 201 and the second metal layer 202
Material is different.The metal material of the first metal layer 201 includes titanium or the alloy comprising titanium.For example, the first metal layer
201 metal material can be the alloy of titanium, titanium-aluminium alloy, titanium maxter alloy or titanium and other metals composition.
In one embodiment, the first metal layer 201 is barrier layer.The first metal layer 201 is mainly used for increasing
Add the adhesive force of the second metal layer 202 and underlay substrate 10 and weakens the diffusion of metal on the substrate 10.By institute
The first metal layer 201 is stated not as conductive layer, even if therefore in the metal material of the first metal layer 201 there are electric conductivity compared with
Also on the electric conductivity of plain conductor, there is no influences for weak titanium.
In one embodiment, the first metal layer 201 with a thickness of 15 nanometers to 50 nanometers.
The metal material of the second metal layer 202 include but is not limited to one of aluminium, copper, gold or silver or more than one
Composition.Alternatively, the metal material of the second metal layer 202 can be the preferable metal of other electric conductivity.
In one embodiment, the second metal layer 202 is conductive layer.
Referring to Fig. 1, the first metal layer 201 includes first part 2011, is located at 2011 side of first part
Second part 2012 and Part III 2013 positioned at 2011 other side of first part.The second metal layer 202 exists
Orthographic projection on the first metal layer 201 is located in the first part 2011.The second part 2012 and the third
The hangover that part 2013 is formed for etch process.
In one embodiment, orthographic projection of the second metal layer 202 on the first metal layer 201 and described the
A part 2011 is overlapped.
The second part 2012 can be, but not limited in the first part 2011 with the Part III 2013
Line is axial symmetry.
In one embodiment, the boundary and described second of the second part 2012 far from the first part 2011
The minimum spacing of metal layer 202 is L1.The boundary of the Part III 2013 far from the first part 2011 and described the
The minimum spacing of two metal layers 202 is L2.
As spacing L1 or L2 bigger, light-leaking area is fewer.Spacing L1 or L2 is smaller, and light-leaking area is bigger.Wherein,
Under conditions of a part and second part satisfaction block light leakage, spacing L1 and L2 are minimized.
In one embodiment, far from the second part 2012 or the Part III of the first part 2011
The minimum spacing of 2013 boundary and the second metal layer 202 is not less than 150 nanometers.Institute far from the first part 2011
State the boundary of second part 2012 or the Part III 2013 and the minimum spacing of the second metal layer 202
The second part 2012 and the Part III 2013 and the metal material of the first part 2011 can phases
It is same or different.In one embodiment, the metal material of the second part 2012 and the Part III 2013 is titanium.It is described
The metal material of first part 2011 can be the alloy of titanium, titanium-aluminium alloy, titanium maxter alloy or titanium and other metals composition.
Referring to Fig. 2, Fig. 2 is the film layer structure figure of second of embodiment of conducting wire 20 in the application display panel.
The conducting wire 20 further includes the third metal layer 203 in the second metal layer 202.
The third metal layer 203 is identical as the function of the second metal layer 202, as conductive layer.
It in one embodiment, can also include groove (not shown) on the third metal layer 203, so that third metal
Layer 203 is connected in parallel with second metal layer 202, reduces the impedance of conductive layer.
In one embodiment, the metal material of the third metal layer 203 include one of aluminium, copper, gold or silver or
More than one composition.
In one embodiment, the conducting wire 20 can also include being located at the 4th metal layer on the third metal layer 203.
Metal layer quantity the application of the conducting wire 20 is not especially limited.
The design of conducting wire can be applied in metal routing all in the display panel in the application.But due to
Only be located at open region in metal routing there is light-leaking area, therefore as the case may be to metal routing in display panel into
Row design.
Referring to Fig. 3, Fig. 3 schemes the step of being the application display panel production method.
The production method of the display panel includes:
S10, a substrate is provided；
In this step, the substrate 10 can be one of glass substrate, quartz base plate, resin substrate etc. as lining
Bottom carries out the production of the pixel electrode.
In one embodiment, the substrate 10 can be flexible base board.The flexible base board can choose polyimides
Film is as substrate.
S20, the first metal layer is formed on the substrate；
Referring to Fig. 4, Fig. 4 is a kind of structure chart of the application display panel production method.
The first metal layer 201 is barrier layer.The first metal layer 201 is mainly used for increasing the second metal layer
202 with the adhesive force of underlay substrate 10 and weaken the diffusion of metal on the substrate 10.Due to the first metal layer 201
Not as conductive layer, therefore in the metal material of the first metal layer 201, there are the titaniums that electric conductivity is weaker.
In one embodiment, the first metal layer 201 with a thickness of 15 nanometers to 50 nanometers.
The first metal layer 201 includes first part 2011, the second part positioned at 2011 side of first part
2012 and the Part III 2013 positioned at 2011 other side of first part.The second part 2012 and the Part III
2013 hangovers formed for etch process.The second part 2012 can be, but not limited to the Part III 2013 with institute
The middle line for stating first part 2011 is axial symmetry.
S30, second metal layer is formed on the first metal layer；
Referring to Fig. 1, the second metal layer 202 is conductive layer.The second metal layer 202 is in the first metal layer
Orthographic projection on 201 is located in the first metal layer 201.The area of the second metal layer 202 is not more than first gold medal
Belong to the area of layer 201.
In one embodiment, orthographic projection of the second metal layer 202 on the first metal layer 201 and described the
A part 2011 is overlapped.
In one embodiment, the metal material of the metal material of the first metal layer 201 and the second metal layer 202
Material is different.The metal material of the first metal layer 201 includes titanium or the alloy comprising titanium.For example, the first metal layer
201 metal material can be the alloy of titanium, titanium-aluminium alloy, titanium maxter alloy or titanium and other metals composition.Second metal
The metal material of layer 202 includes but is not limited to one of aluminium, copper, gold or silver or more than one composition.Alternatively, described
The metal material of two metal layers 202 can be the preferable metal of other electric conductivity.
In one embodiment, the boundary and described second of the second part 2012 far from the first part 2011
The minimum spacing of metal layer 202 is L1.The boundary of the Part III 2013 far from the first part 2011 and described the
The minimum spacing of two metal layers 202 is L2.
As spacing L1 or L2 bigger, light-leaking area is fewer.Spacing L1 or L2 is smaller, and light-leaking area is bigger.Wherein,
Under conditions of a part and second part satisfaction block light leakage, spacing L1 and L2 are minimized.
In one embodiment, far from the second part 2012 or the Part III of the first part 2011
The minimum spacing of 2013 boundary and the second metal layer 202 is not less than 150 nanometers.Institute far from the first part 2011
State the boundary of second part 2012 or the Part III 2013 and the minimum spacing of the second metal layer 202
The second part 2012 and the Part III 2013 and the metal material of the first part 2011 can phases
It is same or different.In one embodiment, the metal material of the second part 2012 and the Part III 2013 is titanium.It is described
The metal material of first part 2011 can be the alloy of titanium, titanium-aluminium alloy, titanium maxter alloy or titanium and other metals composition.
Referring to Fig. 2, the conducting wire 20 further includes the third metal layer 203 in the second metal layer 202.
It in one embodiment, can also include groove (not shown) on the third metal layer 203, so that third metal
Layer 203 is connected in parallel with second metal layer 202, reduces the impedance of conductive layer.
In one embodiment, the metal material of the third metal layer 203 include one of aluminium, copper, gold or silver or
More than one composition.
In one embodiment, the conducting wire 20 can also include being located at the 4th metal layer on the third metal layer 203.
Metal layer quantity the application of the conducting wire 20 is not especially limited.
The design of conducting wire can be applied in metal routing all in the display panel in the application.But due to
Only be located at open region in metal routing there is light-leaking area, therefore as the case may be to metal routing in display panel into
Row design.
According to the another aspect of the application, a kind of electronic device is additionally provided, the electronic device includes the display
Panel；The electronic device includes but is not limited to mobile phone, tablet computer, computer display, game machine, television set, display
Screen, wearable device and other living electric apparatus or household electrical appliance having a display function etc..
This application provides a kind of display panel and preparation method thereof, the display panel include substrate and be located at the base
Conducting wire on plate；The conducting wire includes at least the first metal layer and second metal layer, and the first metal layer is located at the substrate
On, the second metal layer is located on the first metal layer.The area of the second metal layer is not more than first metal
The area of layer.The light-leaking area for being set to conducting wire edge in open region is eliminated, the contrast of display is improved.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of display panel, which is characterized in that the display device including substrate and on the substrate；
Wherein, the display panel further includes for the conducting wire on the substrate, and the conducting wire includes at least the first metal layer and the
Two metal layers, the first metal layer are located on the substrate, and the second metal layer is located on the first metal layer.
2. display panel according to claim 1, which is characterized in that the metal material of the first metal layer include titanium,
Or the alloy comprising titanium.
3. display panel according to claim 1, which is characterized in that the metal material of the second metal layer include aluminium,
One of copper, gold or silver or more than one composition.
4. display panel according to claim 1, which is characterized in that the first metal layer with a thickness of 15 nanometers to 50
Nanometer.
5. display panel according to claim 1, which is characterized in that the first metal layer includes first part, is located at
The second part of the first part side and Part III positioned at the first part other side；
The area of the second metal layer is not more than the area of the first part.
6. display panel according to claim 5, which is characterized in that far from the first part the second part or
The minimum spacing of the boundary of the Part III and the second metal layer is not less than 150 nanometers.
7. display panel according to claim 1, which is characterized in that the conducting wire further includes being located at the second metal layer
On third metal layer；
The metal material of the third metal layer includes one of aluminium, copper, gold or silver or more than one composition.
8. a kind of production method of display panel characterized by comprising
One substrate is provided；
The first metal layer is formed on the substrate；
Second metal layer is formed on the first metal layer；
Wherein, the first metal layer includes first part, positioned at the second part of the first part side and positioned at described
The Part III of the first part other side, the area of the second metal layer are not more than the area of the first part.
9. production method according to claim 8, which is characterized in that the metal material of the first metal layer and described the
The metal material of two metal layers is different；
The metal material of the first metal layer includes titanium or the alloy comprising titanium；
The metal material of the second metal layer includes one of aluminium, copper, gold or silver or more than one composition.
10. production method according to claim 8, which is characterized in that the second part far from the first part
Or the boundary of the Part III and the minimum spacing of the second metal layer are not less than 150 nanometers.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811260323.9A CN109581765A (en) | 2018-10-26 | 2018-10-26 | Display panel and preparation method thereof |
| PCT/CN2018/117724 WO2020082494A1 (en) | 2018-10-26 | 2018-11-27 | Display panel and manufacturing method therefor as well as display module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811260323.9A CN109581765A (en) | 2018-10-26 | 2018-10-26 | Display panel and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109581765A true CN109581765A (en) | 2019-04-05 |
Family
ID=65920967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811260323.9A Pending CN109581765A (en) | 2018-10-26 | 2018-10-26 | Display panel and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109581765A (en) |
| WO (1) | WO2020082494A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534529A (en) * | 2019-08-09 | 2019-12-03 | 深圳市华星光电技术有限公司 | A kind of tft array substrate and its display panel |
| CN112415799A (en) * | 2020-11-10 | 2021-02-26 | Tcl华星光电技术有限公司 | Array substrate and preparation method thereof |
| WO2023246374A1 (en) * | 2022-06-21 | 2023-12-28 | 京东方科技集团股份有限公司 | Wiring substrate and preparation method therefor, light-emitting panel, and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949954A (en) * | 2005-10-12 | 2007-04-18 | 中华映管股份有限公司 | Method for making metal wire |
| CN101676781A (en) * | 2008-09-18 | 2010-03-24 | 统宝光电股份有限公司 | System for displaying images and fabricating method thereof |
| CN204009305U (en) * | 2014-06-25 | 2014-12-10 | 群创光电股份有限公司 | The display device of display panel and its display panel of application |
| CN105280548A (en) * | 2014-07-25 | 2016-01-27 | 中国钢铁股份有限公司 | Copper conductor structure and manufacturing method thereof |
| CN106710499A (en) * | 2015-08-24 | 2017-05-24 | 群创光电股份有限公司 | Display panel and touch control display device |
| KR101887692B1 (en) * | 2011-12-09 | 2018-09-11 | 엘지디스플레이 주식회사 | Method for fabricating array substrate for fringe field switching mode liquid crystal display device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101007686B1 (en) * | 2003-12-11 | 2011-01-13 | 엘지디스플레이 주식회사 | Method of Fabricating Liquid Crystal Display Panel |
| CN100437915C (en) * | 2007-03-16 | 2008-11-26 | 友达光电股份有限公司 | Metal conducting wire and producing method thereof |
| CN103165623B (en) * | 2011-12-16 | 2015-12-16 | 群康科技(深圳)有限公司 | Thin film transistor base plate and its method for making, display |
-
2018
- 2018-10-26 CN CN201811260323.9A patent/CN109581765A/en active Pending
- 2018-11-27 WO PCT/CN2018/117724 patent/WO2020082494A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949954A (en) * | 2005-10-12 | 2007-04-18 | 中华映管股份有限公司 | Method for making metal wire |
| CN101676781A (en) * | 2008-09-18 | 2010-03-24 | 统宝光电股份有限公司 | System for displaying images and fabricating method thereof |
| KR101887692B1 (en) * | 2011-12-09 | 2018-09-11 | 엘지디스플레이 주식회사 | Method for fabricating array substrate for fringe field switching mode liquid crystal display device |
| CN204009305U (en) * | 2014-06-25 | 2014-12-10 | 群创光电股份有限公司 | The display device of display panel and its display panel of application |
| CN105280548A (en) * | 2014-07-25 | 2016-01-27 | 中国钢铁股份有限公司 | Copper conductor structure and manufacturing method thereof |
| CN106710499A (en) * | 2015-08-24 | 2017-05-24 | 群创光电股份有限公司 | Display panel and touch control display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534529A (en) * | 2019-08-09 | 2019-12-03 | 深圳市华星光电技术有限公司 | A kind of tft array substrate and its display panel |
| WO2021027053A1 (en) * | 2019-08-09 | 2021-02-18 | Tcl华星光电技术有限公司 | Tft array substrate and display panel comprising same |
| CN112415799A (en) * | 2020-11-10 | 2021-02-26 | Tcl华星光电技术有限公司 | Array substrate and preparation method thereof |
| WO2023246374A1 (en) * | 2022-06-21 | 2023-12-28 | 京东方科技集团股份有限公司 | Wiring substrate and preparation method therefor, light-emitting panel, and display device |
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| Publication number | Publication date |
|---|---|
| WO2020082494A1 (en) | 2020-04-30 |
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